TWI275452B - Electropolishing assembly and methods for electropolishing conductive layers - Google Patents

Electropolishing assembly and methods for electropolishing conductive layers Download PDF

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Publication number
TWI275452B
TWI275452B TW091133283A TW91133283A TWI275452B TW I275452 B TWI275452 B TW I275452B TW 091133283 A TW091133283 A TW 091133283A TW 91133283 A TW91133283 A TW 91133283A TW I275452 B TWI275452 B TW I275452B
Authority
TW
Taiwan
Prior art keywords
wafer
nozzle
electrolyte liquid
conductive member
chuck
Prior art date
Application number
TW091133283A
Other languages
English (en)
Chinese (zh)
Other versions
TW200300376A (en
Inventor
Hui Wang
Pei-Hau Yih
Muhammed Afnan
Voha Nuch
Felix Gutman
Original Assignee
Acm Res Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Acm Res Inc filed Critical Acm Res Inc
Publication of TW200300376A publication Critical patent/TW200300376A/zh
Application granted granted Critical
Publication of TWI275452B publication Critical patent/TWI275452B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H10P72/0424—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
    • B23H3/00—Electrochemical machining, i.e. removing metal by passing current between an electrode and a workpiece in the presence of an electrolyte
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F7/00—Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects; Servicing or operating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H10P14/47—Electrolytic deposition, i.e. electroplating; Electroless plating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7602—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a robot blade or gripped by a gripper for conveyance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/78—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using vacuum or suction, e.g. Bernoulli chucks
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
TW091133283A 2001-11-13 2002-11-13 Electropolishing assembly and methods for electropolishing conductive layers TWI275452B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US33241701P 2001-11-13 2001-11-13
US37256702P 2002-04-14 2002-04-14

Publications (2)

Publication Number Publication Date
TW200300376A TW200300376A (en) 2003-06-01
TWI275452B true TWI275452B (en) 2007-03-11

Family

ID=26988208

Family Applications (1)

Application Number Title Priority Date Filing Date
TW091133283A TWI275452B (en) 2001-11-13 2002-11-13 Electropolishing assembly and methods for electropolishing conductive layers

Country Status (8)

Country Link
US (1) US20040238481A1 (https=)
EP (1) EP1446514A4 (https=)
JP (5) JP2005509746A (https=)
KR (1) KR20050044404A (https=)
CN (1) CN100497748C (https=)
CA (1) CA2464423A1 (https=)
TW (1) TWI275452B (https=)
WO (1) WO2003042433A1 (https=)

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DE102007044091A1 (de) * 2007-09-14 2009-03-19 Extrude Hone Gmbh Verfahren und Vorrichtung zur elektochemischen Bearbeitung
US8496511B2 (en) * 2010-07-15 2013-07-30 3M Innovative Properties Company Cathodically-protected pad conditioner and method of use
US9255339B2 (en) * 2011-09-19 2016-02-09 Fei Company Localized, in-vacuum modification of small structures
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CN102601471B (zh) * 2012-03-28 2013-07-24 华南理工大学 一种空间曲线啮合齿轮机构的精加工方法
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TWI512851B (zh) * 2012-09-01 2015-12-11 萬國半導體股份有限公司 帶有厚底部基座的晶圓級封裝器件及其製備方法
JP6186499B2 (ja) * 2013-05-09 2017-08-23 エーシーエム リサーチ （シャンハイ） インコーポレーテッド ウェハのメッキおよび／または研磨のための装置および方法
CN105088328B (zh) * 2014-05-07 2018-11-06 盛美半导体设备（上海）有限公司 电化学抛光供液装置
TWI647343B (zh) * 2014-05-16 2019-01-11 盛美半導體設備（上海）有限公司 Apparatus and method for electroplating or electropolishing bracts
CN105316755B (zh) * 2014-07-29 2019-06-25 盛美半导体设备（上海）有限公司 电化学抛光设备
CN105312999A (zh) * 2014-07-29 2016-02-10 盛美半导体设备（上海）有限公司 无应力抛光设备及其工艺腔体
CN104241159B (zh) * 2014-09-19 2018-04-03 中海阳能源集团股份有限公司 太阳能发电支架液体镀层及测量一体装置
CN105448817B (zh) * 2014-09-29 2020-05-19 盛美半导体设备(上海)股份有限公司 一种电化学抛光金属互连晶圆结构的方法
CN106567130A (zh) * 2015-10-10 2017-04-19 盛美半导体设备（上海）有限公司 一种改善晶圆粗糙度的方法
CN105780101B (zh) * 2016-01-27 2018-06-26 杨继芳 一种新型电解抛光设备
CN105742213B (zh) * 2016-03-07 2019-03-12 京东方科技集团股份有限公司 湿法刻蚀设备及湿法刻蚀方法
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CN106352782A (zh) * 2016-11-24 2017-01-25 中国航空工业集团公司金城南京机电液压工程研究中心 一种高温电涡流传感器及制作方法
CN106625033B (zh) * 2016-12-09 2018-12-18 天津津航技术物理研究所 一种确定单点金刚石车削刀痕抛光去除特性的方法
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CN109423688B (zh) * 2017-08-31 2022-03-22 深圳市水佳鑫科技有限公司 电化学处理液循环系统及设备
CN111250805A (zh) * 2020-03-20 2020-06-09 南京航空航天大学 金属粗糙表面的飞行式电解铣削整平方法
CN111230727B (zh) * 2020-03-28 2024-08-02 苏州赛森电子科技有限公司 一种真空镀膜工艺中硅片单面抛光装置及单面抛光方法
CN113782430B (zh) * 2020-06-09 2025-09-12 盛美半导体设备(上海)股份有限公司 去除阻挡层的方法
CN111958478B (zh) * 2020-07-27 2024-06-18 浙江工业大学 基于氧化膜状态主动控制的轴承滚子elid研磨装置
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CN114951858B (zh) * 2022-05-17 2024-05-10 哈尔滨工业大学 一种光纤激光与管电极电解复合用光电液耦合装置
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Also Published As

Publication number Publication date
EP1446514A1 (en) 2004-08-18
KR20050044404A (ko) 2005-05-12
EP1446514A4 (en) 2007-11-28
CN1585835A (zh) 2005-02-23
JP2007016320A (ja) 2007-01-25
CA2464423A1 (en) 2003-05-22
US20040238481A1 (en) 2004-12-02
CN100497748C (zh) 2009-06-10
JP2006316352A (ja) 2006-11-24
JP2005509746A (ja) 2005-04-14
JP2007051376A (ja) 2007-03-01
JP2006291361A (ja) 2006-10-26
TW200300376A (en) 2003-06-01
WO2003042433A1 (en) 2003-05-22

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