TWI268609B - Formation method of SiGe HBT - Google Patents

Formation method of SiGe HBT

Info

Publication number
TWI268609B
TWI268609B TW092130576A TW92130576A TWI268609B TW I268609 B TWI268609 B TW I268609B TW 092130576 A TW092130576 A TW 092130576A TW 92130576 A TW92130576 A TW 92130576A TW I268609 B TWI268609 B TW I268609B
Authority
TW
Taiwan
Prior art keywords
seg
sige
method
base layer
layer
Prior art date
Application number
TW092130576A
Other versions
TW200408125A (en
Inventor
Cheng-Wen Fan
Hua-Chou Tseng
Chia-Hong Chin
Chun-Yi Lin
Cheng-Choug Hung
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to TW092130576A priority Critical patent/TWI268609B/en
Publication of TW200408125A publication Critical patent/TW200408125A/en
Application granted granted Critical
Publication of TWI268609B publication Critical patent/TWI268609B/en

Links

Abstract

A method for forming a SiGe HBT, which combines SEG and Non-SEG growth, is disclosed. The SiGe base layer is deposited by Non-SEG method. Then, the first-emitter layer is developed directly upon the SiGe base layer that has a good interface quality between the base-emitter. Next, a second polysilicon layer, which has a dopant concentration range within 1E19 to 1E21 (atom/cc), is deposited by SEG method. It not only reduces the resistance of the SiGe base layer, but also avoids the annealing that may influence the performance of the device.
TW092130576A 2003-10-31 2003-10-31 Formation method of SiGe HBT TWI268609B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW092130576A TWI268609B (en) 2003-10-31 2003-10-31 Formation method of SiGe HBT

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW092130576A TWI268609B (en) 2003-10-31 2003-10-31 Formation method of SiGe HBT

Publications (2)

Publication Number Publication Date
TW200408125A TW200408125A (en) 2004-05-16
TWI268609B true TWI268609B (en) 2006-12-11

Family

ID=52340135

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092130576A TWI268609B (en) 2003-10-31 2003-10-31 Formation method of SiGe HBT

Country Status (1)

Country Link
TW (1) TWI268609B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7776744B2 (en) 2005-09-01 2010-08-17 Micron Technology, Inc. Pitch multiplication spacers and methods of forming the same

Also Published As

Publication number Publication date
TW200408125A (en) 2004-05-16

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