TWI257147B - Method of manufacturing memory device, memory device and phase change memory device - Google Patents
Method of manufacturing memory device, memory device and phase change memory deviceInfo
- Publication number
- TWI257147B TWI257147B TW93139303A TW93139303A TWI257147B TW I257147 B TWI257147 B TW I257147B TW 93139303 A TW93139303 A TW 93139303A TW 93139303 A TW93139303 A TW 93139303A TW I257147 B TWI257147 B TW I257147B
- Authority
- TW
- Taiwan
- Prior art keywords
- memory device
- phase change
- chalcogenide
- manufacturing
- change memory
- Prior art date
Links
Landscapes
- Semiconductor Memories (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW93139303A TWI257147B (en) | 2004-12-17 | 2004-12-17 | Method of manufacturing memory device, memory device and phase change memory device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW93139303A TWI257147B (en) | 2004-12-17 | 2004-12-17 | Method of manufacturing memory device, memory device and phase change memory device |
Publications (2)
Publication Number | Publication Date |
---|---|
TWI257147B true TWI257147B (en) | 2006-06-21 |
TW200623332A TW200623332A (en) | 2006-07-01 |
Family
ID=37704215
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW93139303A TWI257147B (en) | 2004-12-17 | 2004-12-17 | Method of manufacturing memory device, memory device and phase change memory device |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWI257147B (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI394273B (zh) * | 2008-07-16 | 2013-04-21 | United Microelectronics Corp | 相變化記憶體 |
TWI400771B (zh) * | 2008-01-29 | 2013-07-01 | Hitachi Ltd | Nonvolatile memory device and manufacturing method thereof |
TWI412124B (zh) * | 2008-12-31 | 2013-10-11 | Higgs Opl Capital Llc | 相變化記憶體 |
TWI735482B (zh) * | 2016-02-17 | 2021-08-11 | 南韓商三星電子股份有限公司 | 可變電阻記憶體裝置及其製造方法 |
CN117397387A (zh) * | 2021-05-27 | 2024-01-12 | 美光科技公司 | 具有竖直结构中的侧壁及块体区域的存储器单元 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7969011B2 (en) * | 2008-09-29 | 2011-06-28 | Sandisk 3D Llc | MIIM diodes having stacked structure |
-
2004
- 2004-12-17 TW TW93139303A patent/TWI257147B/zh active
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI400771B (zh) * | 2008-01-29 | 2013-07-01 | Hitachi Ltd | Nonvolatile memory device and manufacturing method thereof |
TWI394273B (zh) * | 2008-07-16 | 2013-04-21 | United Microelectronics Corp | 相變化記憶體 |
TWI412124B (zh) * | 2008-12-31 | 2013-10-11 | Higgs Opl Capital Llc | 相變化記憶體 |
TWI735482B (zh) * | 2016-02-17 | 2021-08-11 | 南韓商三星電子股份有限公司 | 可變電阻記憶體裝置及其製造方法 |
CN117397387A (zh) * | 2021-05-27 | 2024-01-12 | 美光科技公司 | 具有竖直结构中的侧壁及块体区域的存储器单元 |
Also Published As
Publication number | Publication date |
---|---|
TW200623332A (en) | 2006-07-01 |
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