TWI248777B - Method for connecting microcircuits and connection structure by the same - Google Patents

Method for connecting microcircuits and connection structure by the same Download PDF

Info

Publication number
TWI248777B
TWI248777B TW093100277A TW93100277A TWI248777B TW I248777 B TWI248777 B TW I248777B TW 093100277 A TW093100277 A TW 093100277A TW 93100277 A TW93100277 A TW 93100277A TW I248777 B TWI248777 B TW I248777B
Authority
TW
Taiwan
Prior art keywords
circuit
circuit board
resin
insulating film
film layer
Prior art date
Application number
TW093100277A
Other languages
English (en)
Other versions
TW200414859A (en
Inventor
Jeong-Ii Byun
Kyung-Jun Lee
Myung-Kyu Lee
Chucksin Peter
Original Assignee
Lg Cable Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lg Cable Ltd filed Critical Lg Cable Ltd
Publication of TW200414859A publication Critical patent/TW200414859A/zh
Application granted granted Critical
Publication of TWI248777B publication Critical patent/TWI248777B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
    • H05K3/323—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives by applying an anisotropic conductive adhesive layer over an array of pads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/1301—Shape
    • H01L2224/13016—Shape in side view
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/2939—Base material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29399—Coating material
    • H01L2224/294—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29438—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29444—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29399—Coating material
    • H01L2224/294—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29438—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29455—Nickel [Ni] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/2954—Coating
    • H01L2224/29599—Material
    • H01L2224/29698—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29798—Fillers
    • H01L2224/29799—Base material
    • H01L2224/2989—Base material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/819—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector with the bump connector not providing any mechanical bonding
    • H01L2224/81901—Pressing the bump connector against the bonding areas by means of another connector
    • H01L2224/81903—Pressing the bump connector against the bonding areas by means of another connector by means of a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
    • H01L2224/83101—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83851—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester being an anisotropic conductive adhesive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/4985—Flexible insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00013—Fully indexed content
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01027—Cobalt [Co]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01045—Rhodium [Rh]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01058—Cerium [Ce]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01061—Promethium [Pm]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/0665—Epoxy resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
    • H01L2924/07811—Extrinsic, i.e. with electrical conductive fillers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
    • H05K2203/0756—Uses of liquids, e.g. rinsing, coating, dissolving
    • H05K2203/0759—Forming a polymer layer by liquid coating, e.g. a non-metallic protective coating or an organic bonding layer
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
    • H05K2203/1189—Pressing leads, bumps or a die through an insulating layer
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/36—Assembling printed circuits with other printed circuits
    • H05K3/361—Assembling flexible printed circuits with other printed circuits

Description

1248777 案號 93100277 五、發明說明（1) 【發明所屬之技術領域】 本發明係有關於一種微型迴路之連接構造及其方法，特 別是有關於微型迴路連接方法使用非等方性傳導膠黏劑 〔aniS〇tropic conductive adhesive〕，其在一電路板 〔士捲帶式軟板封裝〔Tape Carrier Package〕、一款 陡電路·,〔 Flexible printed Circuit〕、一液晶顯示器 1 quid Crystal Display〕及一印刷電路板〔printed 〕形成連接微型迴路構造，該非等方性 傳導膠黏劑内包含傳導粒子。 先前技術】 曰ί導或液晶顯示器製造領域’膠黏劑係用以固定 曰一曰片、電路板或連接線路，或將其相互固冑。在一液 『面板連接-捲帶式軟板封裝或一軟性電路二 印刷電路板連接一捲；^ u A在 P田人难播帶式軟板封裝或一軟性電路板上，產 等心導:黏劑劑。近來該非 上。 ^罝接用以將+導體晶片固定在電路板 ，其= = 其揭示印刷電路板之構造示意圖， ίίΐΓ 利用習用微型迴路連接方法連接固定 如第一圖所示，依習用微型迴 別設置在該第一電路"^佈局2-Ρ及一第二迴路佈局4-Ρ分 5路佈局2-Ρ對應面向=及路基板5上，且該第— 赌―•⑽-第一 Κ路佈局4-Ρ，以便進行黏接 第7頁 C.\L〇g〇-5\pjve continents\PF1261a. ptc 94. 3. 31 _月 曰 1248777 修正 案號 93100277 五、發明說明（2) 固定該第一電路基板丨及第二電路基板5。接著， =生傳導膠黏劑3相反方向上藉由壓合及加熱該第」電路 二板1及第二電路基板5之側表面，以達成結合該第一迴 局2-P及第二迴路佈局4 — 1^。於此，該非等方性傳導膠黏 劑3包含一絕緣膠黏劑成份3-1及數個傳導粒子3 — 2。 ，粒子3-2均勻分散配置在該絕緣膠黏劑成份㈠内。^ 等方性傳導膠黏劑3可選擇設置形成一薄膜或一膏劑。^ 分散配置在該絕緣膠黏劑成份3 —i内之傳 2 ”屬粒子規格進行分類，在該金屬粒子上覆蓋 在樹脂粒子上覆蓋金屬粒子。 若該傳導粒子3-2係屬金屬粒子時，由於該金屬粒子 重量相對大於該絕緣膠黏劑成份3-1之重量，因此誃 粒子在該絕緣膠黏劑成份3 — i内無法形成均 S屬 ，，若在進行壓合疊置於該第一電路基板路 土 ^之間之該非等方性傳導膠黏劑3時，由於該金 相對具有各種直徑規格及較高硬度，因此該金屬粒子不 產生變形。因此，具有金屬粒子之該非等方性傳 3相對減少在該第—冑路佈局2_p及第二料佈局之':丨 之接觸面積，如此在該第一迴路佈局2_p及第二迴路二 1- P之本身接點之間產生不完全的導通。 ° 此外，習用微型迴路連接方法往往在該第一迴路 2- P及第二迴路佈局4 —p上具有短路的問題。該短 題 下文及圖式予詳細描述。 ]哺於 請參照第二圖所示，其揭示印刷電路板之構造示竟 其係該印刷電路板在利用習用微型迴路連接方法連;固定
C:\Logo-5\Five Continents\PF1261a. ptc 第8頁 1248777 94, 3. 3i --j號9310⑽77_年 月表口 五、發明說明（3) 一 〜-— __ 後之狀態。當含金屬粒子之非等方 基板形成通路時，該金屬粒子不僅將數個^ j，連接電路 2-1及數個第二迴路電極4 — i完成結合以形 ^路電極 金屬粒子亦在該迴路電極2_ 1之間連接一而且該 線6係不應將該迴路電極24之間連 、、、，該短路 用習用微型迴路連接方法製造連接構‘無=二=此，利 為了解決在迴路電極之間的短路問了 > ^ *作。 蓋樹脂以便應用在電路板上。然而，縱使樹月上覆 子不致將迴路電極之間形成通路，於樹二二，金屬粒 •子呈如同核心部具有大小不均的問J於 絕緣膠黏劑成份之重量，因此該勺二重里相對大於 J膠黏劑成份内無法均勻分散：置 屬2子之絕緣膠黏劑在電路板之間形成不當導通。ι旻 ”t =決非等方性傳導膠黏劑所引起的金屬粒子之規格 ίίί屬大重量的問題，將樹脂粒子呈如同核心 邛由金屬成伤包覆以便應用在電路板上。 ，子之絕緣膠黏劑配置在電路板之 =壓= _使該電路板之】的= = = = =子產生變形， 連接不良的缺點。：Γ二=2路板之間的電性 卜 由於在金屬包覆樹脂粒子之舌旦 粒量之間差異小，因此金屬包覆樹i 通々莆祖t政置在該絕緣膠黏劑成份内。然而，由於金 引曰;，因此含金屬包覆樹脂粒子之絕緣膠黏劑 2Γ;?;間短路，其不應將該迴路電極之間連ii 成通路’如此在電形成不當導通。 C:\Logo-5\Five Continents\PF1261a. ptc 第9頁 94· 3· 31 1248777 θ 修正 -塞I虎 931ΠΠ977 五、發明說明（4) 【發明内容】 ^發明主要目的係提供一種微型迴路 非荨方性傳導膠黏連接方法，其使用 度，且由、iir 路之迴路電極之電性連接之可ί 形成通m形成微型即兩者 根據本發明之微型迴路連接方法，該/構:。 每m »•緣樹脂溶劑應用〔塗覆〕力 匕!路板上，該電路板具有數個迴路 $丄在 成在母一電路板上之迴路電極，該 為了連接形 如此該電路板之迴路電極相互面向對庫；—目=向對應， :黏劑置設在該電路板之間；及將該；路板傳導 、::此该電路板之間形成電性連接及機械性^接：、及加 電路4具有數個第一迴路佈局；一第-第-”路佈局’其對應在該第一電路板個第 ，個傳導粒子設置在該第一電路板及第二電將 政接該第一電路板之第一迴路佈局及第二電路 ^，二 他佈局；-絕緣成份設置在該第一電路板及第^ 迴 =路；：絕緣薄膜層應用〔塗覆〕在該第-電路板及第反ί 【實施方式】 為了讓本發明之上述和其他目的、特徵、和優 確被了解’下文將特舉本發明較佳實施例，並 式，作詳細說明如下。 戶厅附圖 C:\Logo-5\Five Continents\PF1261a. ptc 第10頁 94· 3· 31 月 曰 1248777 修正
案號 93100277 五、發明說明（5) 請參照第三圖所示，其揭示本發明第一較每 電路板之構造示意圖，其係該印刷電路板在利 :， 型迴路連接方法連接固定前之狀態。同時，一第一 ^ 9微 ^具有數個第-迴路佈局12_!>及―第二電路板15具有H 第一迴路佈局14-Ρ，該第一迴路佈局12 —ρ及第二迴 1 4-Ρ藉由一非等方性傳導膠黏劑丨3進行結合。 、該第一迴路佈局12-P及第二迴路佈局14 —p分別包含個 迴路電極12及14。該迴路電極丨2及14自該第一電路 『第二電路板15突起。於此，該迴路電極12及14分 個平面部12-1及14-1及數個侧部12 —2及14 —2。該迴^電 12及14之未設置部份形成非迴路電極或底部丨丨 — i及1 5 — 1。 如上述構造，在該第一電路板u及第二電路板15之間 包含一絕緣薄膜層1 6，該絕緣薄膜層丨6具有一預定厚产， 其貪^覆蓋在該平面部12-1及14-1 ;側部12 —2及14 —2又 底部1 ](-1 及 15-1。 ’ 該迴路電極12及14之平面部丨2-1及14-1較佳等距規律分 佈，如此該絕緣薄膜層16在壓合作業時不致發生損壞。如 此，該迴路電極12及14之平面部12-1及Η-〗之間接觸面積 丨相對增加。該非等方性傳導膠黏劑13包含一絕緣成份^] 及數個傳導粒子13-2 ,該傳導粒子丨3-2均勻分散配置在該 絕緣成份13-1内。該非等方性傳導膠黏劑13係可選擇設置 形成一薄膜或一膏劑。 因此，該第一電路板Π及第二電路板15具有第一較佳實 施例之構造，以便進行相互連接，如第四圖所示。 4參照第五圖所示’其揭示本發明第二較佳實施例印刷 C:\Logo-5\Five Continents\PF1261a.ptc 酬
第11頁 3. 3l Λ___^ 日 修正
在利用本發明微 1248777 案號 93100277 五、發明說明（6) ，一第一 路板2 5具 及第二迴 合。該第 個迴路電 及第二電 數個平面 極22及24 電路板 有數個 路佈局 一迴路 極2 2及 路板25 部 22 -1 之設置 相同第一較佳實 電路板之構造示意圖，其係該印刷電路板 型迴路連接方法連接固定前之狀態。同時 21具有數個第一迴路佈局22 —p及一第二電 第一迴路佈局24-P，該第一迴路佈局22 —p 24-P藉由一非等方性傳、導膠黏劑13進行結 佈局22-P及第二迴路佈局24-P分別包含數 24。該迴路電極22及24自該第一電路板21 突起。於此，該迴路電極22及24分別具有 及24_1及數個侧部22 — 2及24 — 2。該迴路電 部份形成開放底部21-1及25-1，其未設置 施例之平面部12-1及14-1。 因此，該第一電路板11及第二電路板15具有第二較佳實 施例之構造，以便進行相互連接，如第六圖所示。 斤:’進一步說明製造具有上述本發明構造之電路板， 且說#連接形成在該電路板内之微型迴路。 1、請再參照第三圖所示，本發明微型迴路連接方法用 以連接電路板11及15。 (1 )、製造該絕緣薄膜層1 6之步驟： 鲁在該第一迴路佈局1 2-P及第二迴路佈局1 4-P上，該絕緣 薄膜層1 6分別在該迴路電極1 2、1 4之平面部1 2 -1、1 4 -1、 侧部12-2、14-2及第一電路板11及第二電路板15之底部 ,1卜1、15-1上具有一預定厚度。即，該絕緣薄膜層1 6係： 藉由將至少一樹脂溶解在一可溶解溶劑製備一混合溶劑 後，將該可溶解溶劑藉由網版印刷〔screen printing〕 、 C solution casting〕或沉殿
C:\Logo-5\Five Continents\PF1261a. ptc 第12頁 94. 3. 31 " 月 曰 修正
1248777 皇I虎 93100277 五、發明說明（7) 〔precipitation〕之劁护作从十 m λ Jl ^ ^ ^ ^ 挂條件應用〔appl ied ,或稱為塗 覆〕在β亥弟一電路板u x 溶劑内之樹弟一電路板15上。溶解在該混合 /合別m树月曰較佳具有—熱塑性塑膠性質。 於此，為了依第三圖所。、 製造該第-電路板本發明第一較佳實施例方法 Ϊ、it 之迴路佈局步驟形成迴路佈局後，在 » ^ Φ 、14 之平面部12-1、14-1、侧部12-2、14~2 及第一電路板11及第二電路板15 、 該絕緣薄膜層16。 低丨11丄lb !上形成 時’若將該含熱固性樹脂之混合溶劑應用〔塗覆〕在 1主ί路板11及第二電路板1 5上’以形成該絕緣薄膜層 16,丄备該第一電路板u及第二電路板15在結合製程上進 打壓δ及加熱時，由於該絕緣薄膜層16未形成軟化，因此 該絕〖灣薄膜層16無法由較大的結合力結合在非等方性傳 膠祕销。同時，該迴路佈局之迴路電極易產生腐蝕。如 此，其降低該第一電路板丨丨及第二電路板15之接點之使 用壽命及可靠度。 在溫度60 °C至150 °C範圍之間較佳具有軟化點 丨·〔 softening point〕之該熱固性樹脂可選自多重組群， 其係由聚乙烯樹脂、乙烯共聚樹脂、乙烯醋酸乙烯共聚樹 脂、乙烯丙烯酸共聚樹脂、丙烯酸乙烯醋共聚樹脂、聚醯 胺樹脂、聚脂樹脂、苯乙烯丁二烯共聚樹脂、乙烯丙烯共 聚樹脂、丙烯酸酯橡膠、丙烯腈丁二烯共聚樹脂、苯氧基 •樹脂、熱塑性環氧樹脂、聚胺基甲酸酯樹脂、聚乙烯縮醛 樹脂及聚乙烯丁基樹脂組成。
94· 3· 31 Λ—^月 曰 1248777 案號 93100277 五、發明說明（8) 於此，基於考量電路板結合製程之加熱溫度，若埶塑性 樹脂之軟化點之溫度低於60 t時，由於位於該迴路佈局 12- P内之該迴路電極12之側部12-2受損，因此該迴 1 2藉由該傳導粒子引起短路現象。同時，若熱塑性樹脂之 軟化點之溫度高於〔超過〕15(rc時，由於該熱塑性樹曰脂 未形成軟化’因此其減低在該電路板之間的結合力，且造 成不良的電性連接。較佳的，熱塑性樹脂之軟化點之溫= 可介於8 0 C至1 2 0 °C。在後續較佳實施例介於8 〇它至丨2 〇 π 丨•内，該樹脂所顯示之特性係降低連結抗力及提高結合力。 該絕緣薄膜層16較佳具有〇. 1 至5 之厚度。若該絕 緣薄膜層16之厚度低於^ //111時，在壓合製程上該絕薄 膜層1 6自該迴路電極丨2、2 4產生剝離，如此該傳導粒子/ 13- 2引起該迴路電極12、14之短路。同時，若該絕緣薄膜 層16之厚度高於5 時，在壓合製程上縱使在該第一電路 板11及第二電路板1 5上施加足夠壓力，由於該傳導粒子 1 3-2/無法克服該絕緣薄膜層丨6之厚度，因此該迴路電極 12、14難以形成相互導通。如此造成該第一電路板丨丨及第 二電路板1 5不良的電性連接。 1參該絕緣薄膜層16最佳具有0.3 /zm至3 /zm之厚度。 (2 )、結合步驟： 將在該第一電路板11及第二電路板15上施加壓力及加 熱，位於該迴路電極12、14對應位置上之絕緣薄膜層16產 生破裂’且同步的該傳導粒子分散在該破裂絕緣薄膜層工6 内’如第四圖之傳導粒子圖號標示為「丨7」，如此該迴路 電#12 ' 14之間產生電性連接。此時，由於施加在該第一
1248777 修正 案號 93100277 ---- 五、發明說明（9) 電，板1】及第二電路板】5上之麼力無法在該第一電 及第二電路板15上之表面之平行方 於該迴路電極12、14之側部j 9 1, 〇 因此位 匕那接在該迴路雷極1 2、1 /1夕Μ :==引起短路的問題，如第四圖之傳導粒子圖 此外，如第三圖所示，由於兮 覆〕在該第-電路板η 電路 =膜層16應用〔塗 方性傳導膠黏劑1 3具有較佳的相* ^間’使其與非等 Q 1 ★从人丄 乂住的相谷性的優點，因此I連接 構把之、，力及電性連接具有高可靠度，如四ς 一。 2、請參照第五圖所示’本發明微型迴 方不。 連接電路板21及25。 連接方法用以 (1)、製造該絕緣薄膜層26之步驟： 如第五圖所示，利用前述第三 板21及一第-雷政舡” L 万决—第一電路 产第一電路板25。一絕緣薄膜層^具有 並形成在迴路電極22、24之平面部22_丨 該迴路電極22、24則分別兮詈a釐、 1以外&域， 迴蹊佑…P p 第一迴路佈局22_P及第二 •及厚度相同於第三圖之第：電==成：、製造方法 造條件。 # €絡板11及第二電路板15之製 於此，為了依第五圖所示之本發明第二較佳 製造該第一電路板2丨及第二電路 實施例方法 驟形成該第-電路板21及第二電路板2回=餘刻製程步 該迴路電極22、24之侧部22-2、24-2及第、Ϊ佈局後’在 二電路板25之底部21]、2H上形成路板21及第 -~------^@、絕緣缚膜層2 6，其 第15頁 C：\Log〇-5\Five Continents\PF1261a. ptc 1248777 9.^100977 五、發明說明（10) 係利用保留在該第一迴路佈局22 —p及第二迴路佈局以吖上 之光阻劑〔未緣示〕。接著，去除該光阻劑，此時除了該 2: 5】Π、24之平面部以―1 ’―1以外，該絕緣薄膜層 26形成在该迴路電極22、24之侧部22_2、^―2及第一電路 板21及第二電路板25之底部21-1、25-1上。 (2)、結合步驟： 在。亥第電路板21及第二電路板25上施加壓力及加埶 時，由於該迴路電極22、24之平面部22 —丨、24q ^ 丨•絕緣薄膜層26，因此該迴路電極22、24之平面部以―工、 1^4-1之間相互面向對應。於是，分散在該非等方性傳 黏劑13之傳導粒子直接固定在該平面部22 —丨、—1上，如 第/、圖之傳導粒子圖號標示為「27」，如此該迴路電極 2 2 2 4之間形成電性連接。此時，由於施加在該第一電路 板21及第二電路板25上之壓力無法在該第一電路板以犮第 二電ί板25上之表面之平行方向上形成壓力，因此位於該 :::極22 : 24之側部22一 2、24一2上之該絕緣薄膜層⑼可 避免產生破裂。因此，鄰接在該迴路電極22、24之間的傳 導^ =無法引起短路的問題，如第六圖之傳導粒子圖號標 不為「28」。 此外，如第五圖所示，由於該絕緣薄膜層26應用〔塗 覆〕在該第一電路板21及第二電路板25之間，使其與非等 方性傳導膠黏_具有較佳的相容性的優點，目此立連接 Ϊ造之結合力及電性連接具有高可靠度，如第六圖;斤示。 實施例 _碍丁 ^后所54實施例’藉&量測連結抗力顯示捲帶式軟板封
94· 3· 31
.-1248777 -案號 931ΠΠ977 - 五、發明說明（11) 哀〔TCP〕之連接可靠度，在實施例丨至4之捲帶
裝内形成一熱塑性樹脂之絕緣薄膜層，在比較例i之捲帶 式軟板封裝内形成一熱固性樹脂之絕緣薄膜層， T 2之捲帶式軟板葑裝内未形成絕緣薄膜層。此外，在實施 例及比較例内，藉由量測結合力顯示非等方性 之黏結等級。 ^ ^ 該非等方性傳導膠黏劑包含一絕緣膠黏劑成份及數個傳 導粒子’該傳導粒子均勻分散在該絕緣膠黏劑成份内，該 丨絕緣膠黏劑成份塗覆在一聚酯薄膜上，該薄膜薄膜之表面 用於釋放製程。接著，利用一風扇加熱器在溫度8〇它下進 行烘乾3分鐘，如此在該聚酯薄膜上該絕緣膠黏劑成份塗 覆形成18 /zm之厚度。
該傳導粒子由日本積水化學工業公司〔SekisiH
Chemical Company〕製造。於此，該傳導粒子具有平均5 a直徑，其構造係將樹脂做為一核心部，一鎳金屬層 樹脂，且一黃金層再包覆該鎳金屬層。 由於該傳導粒子具有該樹脂做為核心部，因此當壓迫該 傳導粒子時，由該傳導粒子本身的壓擠變形導致減少施加 丨·在該迴路電極之應力。此外，該傳導粒子可避免大小尺寸 不均勻或分佈不均勻。 貫施例1 曰本東洋紡織公司〔T〇y〇bo Co.〕所生產之Vyl〇n200TM 聚醋溶解在一混合溶劑内，該混合溶劑係由重量比3 : 1之 ， 酮〔keton〕及甲苯〔t〇iuene〕混合，以製備含25°/。固體 之溶液。接著，利用網版印刷機〔s c r e e n p r i n t e r〕將該
C:\Logo-5\Five Continents\PF1261a. ptc ·-1248777 索號 93100277 五、發明說明（12) 樹脂溶液塗覆在捲帶式軟板封裝之迴路電極 電，部具有30 的線寬、6〇 β m的間距及^ ’該迴路 接著’塗覆樹脂洛液之捲帶式軟板封裝利用_ &子^ 70 °C下進行吹熱風烘乾5分鐘，μ此媒彡曰承#崎相在、，凰度 秘册u壯从# 糟此獲仔覆盒絕緣薄膜之 捲▼式軟板封装。接者，利用一測微計 、 測該絕緣薄膜，其具有之厚度^十〔miCr〇meter〕量 實施例2 除了韓國Okong黏著劑公司〔〇k〇ng b〇nd c〇·〕 之PVAc302TM乙烯基醋酸鹽樹脂溶解在一混合溶 P用相同實施例1方法製造覆蓋絕緣薄膜之捲帶 卜，利 裝，該混合溶劑係由重量比3:1之酮〔ket〇n〕及甲苯 〔toluene〕混合，以製備含25%固體之溶液。 實施例3 愈日本瑞翁公司〔NiPP〇n zeon Co·〕所生產之 FN4002TM硝基二甲苯溶解在一混合溶劑内外利 相同實施例1方法製造覆蓋絕緣薄膜之捲帶式軟板封裝， 5亥混合溶劑係由重量比3 : 1之酮〔让e t 〇 η〕及甲苯 〔toluene〕混合，以製備含25〇/。固體之溶液。 0實施例4 除了美國陶氏公司〔D〇w Co.〕所生產之D. E. R. 667〇tm 環氧樹脂溶解在一混合溶劑内外，利用相同實施例1方法 製造覆蓋絕緣薄膜之捲帶式軟板封裝，該混合溶劑係由重 量比3: 1之酮〔keton〕及甲苯〔toluene〕混合，以製備 含25%固體之溶液。 比較例1
C:\Logo-5\Fi ve Continents\PF1261 ，1248777
94· 3· 31 美國莎德瑪公司〔Sartomer Co.〕所生產之cn999tm熱固 性樹脂稀釋在一混合溶劑内製造以製備重量百分比5 〇 %之 ，脂溶液。接著，〔CIBA Co·〕所生產之igacure 184TM重 量百合比3%之紫外線起發劑〔UV initiator〕之芳香氨基 钟酸酯溶解在該樹脂溶液内，以製備一混合溶液。接著二 利用網版印刷機將該混合溶劑塗覆在捲帶式軟板封裝之迴 路電極部上。接著，塗覆混合溶液之捲帶式軟板封裝利用 一烤箱在溫度5 0 °C下進行吹熱風烘乾5分鐘，且利用該紫 <瞻外線起發劑〔UV initiator〕作用30秒進行固化，藉此獲 得覆蓋絕緣薄膜之捲帶式軟板封裝，該絕緣薄膜且有丨 之厚度。 上匕較例2 為此比較例，在習用捲帶式軟板封裝之迴路電極部上未 11一絕緣薄膜。 實施例及比較例之捲帶式軟板封裝利用非等方性傳 導膠黏劑連接每個連接構造。 即，具有非等方性傳導膠黏劑之聚酯薄膜切割形成 ^.Snnn之寬度。接著，該傳導膠黏劑在溫度8〇r及壓力 丨P).5Mpa下稍附著在IT0玻璃板上兩秒鐘，該IT〇玻璃具有2〇 Ω/mm2之表面抗力及0.7mm之厚度，其係由韓國三星康寧公 司〔SAM-SUNG C0RNING Co·〕製造。接著’該聚醋薄膜自 該IT0玻璃板上之非等方性傳導膠黏劑進行剝離。接著，
第19頁 該捲帶式軟板封裝之迴路電極部具有3〇^m的線寬、6〇//m 的間距及18 _的厚度，其具有由實施例及比較例所製造 之絕緣薄膜，未覆蓋絕緣薄膜之該捲帶式軟板封裝稍黏合 -1248777 94· 3· 31 案號93100277_^月 日 修正 五、發明說明（14) "~' " 〜 在I TO玻璃板上之非等方性傳導膠黏劑。接著，該捲帶式 軟板封裝在溫度1 60 °C及壓力3Mpa下進行熱壓處理1 5秒 鐘。因此，由該非等方性傳導膠黏劑黏合形成連接構造。 量測該連接構造之連結抗力及結合力。 首先，針對連結抗力，該捲帶式軟板封裝之非等方性傳 導膠黏劑在溫度85 °C及相對濕度85RH%〔 Relative Humidity %〕下放置1〇〇小時後進行分別量測起始抗力值 及量測抗力值。 上述量測結果表示於下述表一 ;释藏二 案例 抗力値 起始抗力値〔Ω〕 抗力値在溫度85°C及相對濕度 85RH%下放置1〇〇小時〕 實施例1 2.2 2.4 實施例2 2.1 2.7 _施例3 2.6 3.5 實施例4 2.5 2.6 比較例1 OFF OFF 比較例2 2.1 16.5 表一 如表一所示，相對於比較例2未覆蓋絕緣薄膜，實施例i 至4之起始抗力值相對較低且在抗力2· 1 Ω至2· 6 Ω之間。 反而，覆蓋熱固性樹脂之比較例1則未顯示起始抗力值。 使用在比較例1之熱固性樹脂在迴路連接製程之起始+
94. 3. 31 修正 1248777 案號 93100277 五、發明說明（15) 驟未受加熱及加壓的破壞， 個迴路電極之間。 且該傳導粒子無法電性連接兩 、相反的’若利用熱固性樹脂處理該絕緣薄膜日夺，由於在 ^路連接製程之起始步驟該絕緣薄膜產生破裂，視其連結 抗力具有相對低的抗幻直。如此，若採用熱固性樹脂處理 該絕緣薄膜時，不致產生起始導通的問題。 此外，關於在溫度85。(：及相對濕度85RH%〔Relative Humidity %〕下放置100小時後之抗力值，該比較例2之抗 丨值明顯提升。反之，比較例1則不具抗力值。在高溫及
高濕度之條件下濕氣滲透至迴路電極上，如此侵蝕該迴路 電極。 W 無論如何’由於實施例1至4之抗力值稍提升，其視由熱 固性塑膠組成的該絕緣薄膜具有由濕氣引起的迴路電極^ 如此’該實施例1至4在惡劣環境下較能長期確保維 電極之導通。 針對結合力，該捲帶式軟板封裝之非等方性傳導膠黏劑 在溫度85 °C 及相對濕度85RH%〔 Relative Humidity %〕下 放置1 0 0小時後進行分別量測起始結合力值及量測結合力 •值。 。 上述量測結果表示於下述表二。
C:\Logo-5\F i ve Cont i nents\PF1261a. ptc 第21頁 1248777 94· 3· 31 —年 月 日 五、發明說明（16) —案號 93100277 修正 案例 量測結合力値 起始結合力値 〔kgf/cm〕 量測、結合力値〔kgf/cm〕〔在溫度85°C 及濕度85RH%下放置100小時〕 實施例t 1.5 1.2 實施例2 1.6 1.2 實施例3 1.2 0.8 實施例4 1.0 0.9 比較例1 1.1 0.6 比較例2 1.0 0.6 表二 如表二所示，相對於比較例2未覆蓋絕緣薄膜，實施例j ^至4之起始結合力值相對較高且在結合力值
之間。反而，覆蓋熱固性樹脂之比較例丨之結合力 比較例2相似。由於該捲帶式軟板封裝之絕緣薄膜 在迴路連接製程之起始步驟加熱及加壓下仍未產生軟化， 因此溶化的非等方性傳導膠黏劑無法輔助形成結合力。 此外’關於在溫度85°C及相對濕度85RH%〔Relative FHnmidity %〕下放置1〇〇小時後之抗力值，該比較例1及2 之結合力值減少超過40%。在高溫及高濕度環境下濕氣極 易滲透至非等方性傳導膠黏劑及捲帶式軟板封裝之間，如 此固化該非等方性傳導膠黏劑。 反之，甚至經長期擺放後，由於非等方性傳導膠黏劑產 生熔化結合，因此實施例1至4之結合力具有良好的可靠
第22頁 1248777 案號 93100277 五、發明說明（17) 度。 本發明之微型迴路 膠黏劑，因此能避免 有均勻的分散等級， 雖然本發明已利用 劑成份.用以連接微型 性傳導膠黏劑成份連 雖然本發明已以前 定本發明，任何熟習 ^範圍内，當可作各種 圍當視後附之申請專 曰 連接採用 由傳導粒 其排除電 諸前述實 迴路，但 接微型迴 述較佳實 此技藝者 之更動與 利範圍所 31 修正 含傳導粒子之非等方性傳導 子所引起的短路問題，且具 性傳導的缺點。 施例說明非等方性傳導膠黏 是本發明仍含蓋使用非等方 路之連接方法。 施例揭示，然其並非用以限 ’在不脫離本發明之精神和 修改，因此本發明之保護範 界定者為準。 C:\Logo-5\Five Continents\PF1261a.ptc 第23頁 94. 31 i 月 曰 1248777 93100277 江 α 圖式簡單!㈣ ""'— --—-^--1 修正 【圖式簡單說明】 第1圖：習爾£口 丨丨办 在利用習用微示意圖，該印刷電路板 第2圖：習用印：ί方法在連接固定前之狀態。 在利用f m W π、電路板之構造示意圖，該印刷電路板 第迴路連接方法在連接固定後之狀態。 圖，該印刷明第—較佳實施例印刷電路板之構造示意 固定^之狀態^板在利用本發明微型迴路連接方法在連接 圖第ί【圖ί，明第一較佳實施例印刷電路板之構造示意 在連接固定後^=路板在利用本發明微型迴路連接方法 電ί::構ί發：第二較佳實施例本發明較佳實施例印刷 垃士冓每不忍圖，該印刷電路板在利用本發明微型迴 择方法在連接固定前之狀態。 圖，=ί固本發明第二較佳實施例印刷電路板之構造示意 在連印刷電路板在制本發明微型迴路連接方法 牡逑接固疋後之狀態。 圖號說明： 1 第一電路基板 2一1第一迴路電極 3一1絕緣膠黏劑成份 4-Ρ 第二迴路佈局 5 第二電路基板 2- Ρ第一迴路佈局 3 非等方性傳導膠黏劑 3- 2 傳導粒子 4一1第二迴路電極 6 短路線
1248777 案號 93100277 94. 3. 31 年月曰 修正 圖式簡單說明 11 第 —一 電 路 板 1卜1 底 部 12 迴 路 電 極 12-P 第 一 迴 路 佈 局 12 - 1 平 面 部 12-2 側 部 13 非 等 方 性 傳導膠 黏劑13 -1 絕 緣 成 份 13 - 2 傳 導 粒 子 14 迴 路 電 極 14 - P 第 二 迴 路 佈局 14-1 平 面 部 14- 2 側部 15 第 二 電 路 板 15- 1 底 部 16 絕 緣 薄 膜 層 _ 17 傳 導 粒 子 18 傳 導 粒 子 ’21 第 一 電 路 板 21-1 底 部 22 迴 路 電 極 22 - P 第 一 迴 路 佈 局 22 - 1 平 面 部 22-2 側 部 24 迴 路 電 極 24 - P 第 二 迴 路佈 局 臀 1 平 面 部 24-2 側 部 第 二 電 路 板 25-1 底 部 26 絕 緣 薄 膜 層 27 傳 導 粒 子 28 傳 導 粒 子 #
C:\Logo-5\Five Continents\PF1261a. ptc 第25頁

Claims (1)

  1. 94· 3· 31 1248777 曰 ~-----案號 9310Π?71 '申請專利範圍 1、—種微型迴路之連接方 〔β〕、盤備_绍矣 “包含步驟· I備絕緣樹脂溶液； 邱· b〕、將忒絕緣樹脂溶液塗々 電路板各具有迴路佈局，如4在母一電路板上，該二 形成在該二電路板具迴路佈 絕緣薄臈層分別 〔C〕、為了對應電性連接每個該電表面上； 迴路電極，對位該二電路板至 板^之迴路佈局的 該二電路板之迴路電極相互面向 Y對應，如此使 〔d〕、將—非等方性傳導膠㈣丨置、 路佈局之間；及 Μ —電路板之迴 〔e〕、進行加壓製程及加熱製程， =佈局的迴路電極之間對應利用非等;: 電路板膠之點 fe?用Ξ ί:ΐ連Ϊ及機械性連接，同時該絕緣薄膜層則 電路板之相鄰迴路電極之間產生… 、依申知專利範圍第1項之微型迴路之連接方法，其中 =(a)步驟之絕緣樹脂溶液係由溶解至少一熱塑性樹 。月曰在一可溶解溶劑，該熱塑性樹脂在溫度6 〇艺至〗5 〇 C範圍之間具有一軟化點。 树月曰、本乙烯丁二烯共聚樹脂、乙烯丙烯共聚樹脂、 丙烯酸酯橡膠、丙烯腈丁二烯共聚樹脂、苯氧基樹脂 、依申請專利範圍第2項之微型迴路之連接方法，其中 該熱塑性樹脂可選自一組群，其係由聚乙烯樹脂、乙 烯共聚樹脂、乙烯醋酸乙烯共聚樹脂、乙烯丙烯酸共 聚樹脂、丙烯酸乙烯醋共聚樹脂、聚醯胺樹脂、聚脂 樹脂、苯乙烯丁二烯共聚樹脂、乙烯丙烯共聚樹脂、 酸醋棱藤、呙祕瞎丁 、法組日&、贫备：a枯士 _
    第26頁 C:\Logo-5\Five Continents\PF1261a. ptc 1248777 t號 93100277 申請專利範圍 樹ίίϊ環ί樹脂、聚胺基甲酸醋樹脂、聚乙烯縮醛 Μ知及聚乙烯丁基樹脂組成。 、依申請專利範圍第1項之微型迴路之連接方法，直 該（a)步驟之絕緣樹脂溶液係由溶解至少一熱塑性塑 二二二可溶解溶劑，該熱塑性塑膠在溫度8〇^至12。 C祀圍之間具有一軟化點。 、：?Λ專利範圍第1項之微型迴路之連接方法，其中 该（b)步驟之絕緣薄膜層具有〇1 ^至5 之、。 、依申請專利範圍第】項之微型迴路之連接方法’又盆中 該（b)步驟之絕緣薄膜層具有〇 3 至3 “爪之产、 、依申請專利範圍第i項之微型迴路之連接旱又 該非等方性傳導膠黏劑包含一絕 ，八 羊，兮德道1 Γ 絕緣成份及數個傳導粒 子〜傳導粒子分散在該絕緣成份内。 严申請專利範圍第！項之微型 ，步驟之絕緣薄膜層形成在該迴之路連佈 部、-侧部及該電路板之一底部上。伸々之千面 利範圍第1項之微型迴路之連接方法，其中 該（b ) γ驟之絕緣薄腺居开彡士、 及該電路板之部膜/。以在@迴路佈局之-側部 一種微型迴路之連接構造，其包含： 第電路板具有一第一迴路佈局； 電：ΐ具有一第二迴路佈局對應於該第-電路 板之第一迴路佈局；· ^ 电格 數個傳導粒子定位在該第一電路板及第二電路板之間 六 6 7 9 10 ΗΠ8 C:\Logo-5\Five Continents\PF1261a. ptc 第27頁 修正 丄248777六、申請專^* 及第二迴^應連接該第一迴路佈局之數個迴路電極 —浐、路佈局之數個迴路電極； 一第二f* 2 f位在遠第一電路板及第二電路板之間； 局的迴路在該第-電路板之第-迴路佈 t ^ 4電極上，該第一絕緣薄膜層用以避免該第一 一^板，相鄰迴路電極之間產生短路；及届μ 一巴緣薄膜層塗覆在該第二電路板之第二迴路佈 ;政匕路電極上’該第二絕緣薄膜層用以避免該第二 饮2之相鄰迴路電極之間產生短路。 申明專利範圍第1 〇項之微型迴路之連接構造，其中 該迴路電極具有一平面部。 依申睛專利範圍第10項之微型迴路之連接構造，其中 s k路電極具有一前部及數個側部。 ^申請專利範圍第1〇項之微型迴路之連接構造，其中 ”亥絕緣薄膜層形成在該迴路電極之一側部及該電路板 之一底部上。 依申請專利範圍第10項之微型迴路之連接構造，其中 該絕緣薄膜層具有〇· 1 至5 /zm之厚度。 依申請專利範圍第10項之微型迴路之連接構造，其中
    12
    14 該絕緣薄膜層具有〇· 3 /zm至3 //m之厚度。 1 6、依申請專利範圍第1 〇項之微型迴路之連接構造，其中 該絕緣薄膜層係由熱塑性樹脂製成。 1 7、依申請專利範圍第1 6項之微型迴路之連接構造，其中 該熱塑性樹脂可選自一組群，其係由聚乙烯樹脂、乙
    C:\Logo-5\Five Continents\PF1261a. ptc 第28頁 • ‘1248777 94. 3. 3i _案號93100277_年月日__ /六、申請專利範圍 烯共聚樹脂、乙烯醋酸乙烯共聚樹脂、乙烯丙烯酸共 聚樹脂、丙烯酸乙烯醋共聚樹脂、聚醯胺樹脂、聚脂 樹脂、苯乙烯丁二烯共聚樹脂、乙烯丙烯共聚樹脂、 丙烯酸酯橡膠、丙烯腈丁二烯共聚樹脂、苯氧基樹脂 β 、熱塑性環氧樹脂、聚胺基甲酸酯樹脂、聚乙烯縮醛 •樹脂及聚乙烯丁基樹脂組成。
    C:\Logo-5\Five Continents\PF1261a. ptc 第29頁 ·，1248777 94· 3. 3ΐ _案號93100277_年月日 修正 ^ 六、指定代表圖 (一） 、本案代表圖為：第 3 圖 (二） 、本案代表圖之元件代表符號簡單說明： 11 第 一 電 路 板 11- 1 底 部 12 迴 路 電 極 12 - P 第 一 迴 路 佈 局 12-1 平 面 部 12 - 2 侧 部 13 非 等 方 性 傳導膠黏劑 13-1 絕 緣 成 份 13- 2 傳 導 粒 子 14 迴 路 電 極 14- P 第 二 迴 路 佈 局 14-1 平 面 部 14 - 2 側部 15 第 二 電 路 板 15- 1 底 部 16 絕 緣 薄 膜 層
    七、本案若有化學式，請揭示最能顯示發明特徵的化學式：
    C:\Logo-5\Five Continents\PF1261a. ptc 第5頁
TW093100277A 2003-01-08 2004-01-06 Method for connecting microcircuits and connection structure by the same TWI248777B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020030001019A KR100559937B1 (ko) 2003-01-08 2003-01-08 미세회로의 접속방법 및 그에 의한 접속 구조체

Publications (2)

Publication Number Publication Date
TW200414859A TW200414859A (en) 2004-08-01
TWI248777B true TWI248777B (en) 2006-02-01

Family

ID=36383778

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093100277A TWI248777B (en) 2003-01-08 2004-01-06 Method for connecting microcircuits and connection structure by the same

Country Status (7)

Country Link
US (1) US20050211464A1 (zh)
JP (1) JP2006513566A (zh)
KR (1) KR100559937B1 (zh)
CN (1) CN100356536C (zh)
AU (1) AU2003252543A1 (zh)
TW (1) TWI248777B (zh)
WO (1) WO2004064143A1 (zh)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100740762B1 (ko) * 2005-02-10 2007-07-19 오므론 가부시키가이샤 접합 방법 및 접합 장치
KR100684726B1 (ko) * 2005-09-27 2007-02-20 삼성에스디아이 주식회사 플라즈마 디스플레이 장치
WO2007039960A1 (ja) * 2005-10-05 2007-04-12 Sharp Kabushiki Kaisha 配線基板及びそれを備えた表示装置
WO2007039959A1 (ja) * 2005-10-05 2007-04-12 Sharp Kabushiki Kaisha 配線基板及びそれを備えた表示装置
JP2007141956A (ja) * 2005-11-15 2007-06-07 Three M Innovative Properties Co プリント回路基板の接続方法
KR100747336B1 (ko) * 2006-01-20 2007-08-07 엘에스전선 주식회사 이방성 도전 필름을 이용한 회로기판의 접속 구조체, 이를위한 제조 방법 및 이를 이용한 접속 상태 평가방법
KR101150116B1 (ko) * 2006-04-12 2012-06-08 히다치 가세고교 가부시끼가이샤 회로 접속용 접착 필름, 회로 부재의 접속 구조 및 회로 부재의 접속 방법
JP2007317861A (ja) * 2006-05-25 2007-12-06 Nec Lcd Technologies Ltd 多層プリント基板及び液晶表示装置
JP4879276B2 (ja) * 2006-10-24 2012-02-22 パナソニック株式会社 ３次元電子回路装置
US7982137B2 (en) * 2007-06-27 2011-07-19 Hamilton Sundstrand Corporation Circuit board with an attached die and intermediate interposer
KR101043973B1 (ko) * 2008-04-08 2011-06-24 엘지이노텍 주식회사 접속 신뢰성이 우수한 이방도전필름 및 이를 이용한 회로접속구조체
FI20085468A0 (fi) * 2008-05-16 2008-05-16 Polar Electro Oy Sähköpiirijärjestely
JP2011018873A (ja) * 2009-05-22 2011-01-27 Sony Ericsson Mobilecommunications Japan Inc 電磁シールド方法および電磁シールド用フィルム
JP5232130B2 (ja) * 2009-12-02 2013-07-10 住友電気工業株式会社 プリント配線板の接続構造、その製造方法、および異方導電性接着剤
JP5619439B2 (ja) * 2010-03-16 2014-11-05 株式会社ジャパンディスプレイ 実装構造体、電気光学装置、実装部品および実装構造体の製造方法
JP5297418B2 (ja) * 2010-06-21 2013-09-25 デクセリアルズ株式会社 異方性導電材料及びその製造方法、並びに実装体及びその製造方法
WO2012014339A1 (ja) 2010-07-26 2012-02-02 日本メクトロン株式会社 フレキシブルプリント配線板及びその製造方法
KR20230074824A (ko) * 2010-11-03 2023-05-31 알파 어셈블리 솔루션스 인크. 소결 재료 및 이를 이용한 부착 방법
JP2012212864A (ja) * 2011-03-18 2012-11-01 Sekisui Chem Co Ltd 接続構造体の製造方法及び接続構造体
KR20130076399A (ko) * 2011-12-28 2013-07-08 삼성디스플레이 주식회사 디스플레이 장치
KR20130091521A (ko) * 2012-02-08 2013-08-19 삼성디스플레이 주식회사 이방성 도전층을 포함하는 미세 전자 소자 및 미세 전자 소자 형성 방법
CN103797901B (zh) * 2012-08-10 2017-04-12 松下知识产权经营株式会社 部件安装基板的制造方法及制造系统
KR101513642B1 (ko) * 2013-08-21 2015-04-20 엘지전자 주식회사 반도체 디바이스
US9814141B2 (en) * 2013-09-10 2017-11-07 Sakai Display Products Corporation Connection structure of conductors and display apparatus
CN103596379A (zh) * 2013-10-26 2014-02-19 溧阳市东大技术转移中心有限公司 一种双层柔性电路板的制造方法
CN103607856A (zh) * 2013-10-26 2014-02-26 溧阳市东大技术转移中心有限公司 一种复合挠性基板的制造方法
CN103596355A (zh) * 2013-10-26 2014-02-19 溧阳市东大技术转移中心有限公司 一种双层柔性电路板
JP2015135878A (ja) * 2014-01-16 2015-07-27 デクセリアルズ株式会社 接続体、接続体の製造方法、接続方法、異方性導電接着剤
US9837760B2 (en) * 2015-11-04 2017-12-05 Google Inc. Connectors for connecting electronics embedded in garments to external devices
JP6286473B2 (ja) * 2016-04-19 2018-02-28 デクセリアルズ株式会社 接合体
CN106653749A (zh) * 2017-01-04 2017-05-10 昆山工研院新型平板显示技术中心有限公司 显示模组及其制备方法
JP7160302B2 (ja) * 2018-01-31 2022-10-25 三国電子有限会社 接続構造体および接続構造体の作製方法
JP7046351B2 (ja) 2018-01-31 2022-04-04 三国電子有限会社 接続構造体の作製方法
JP7185252B2 (ja) 2018-01-31 2022-12-07 三国電子有限会社 接続構造体の作製方法
CN108831872A (zh) * 2018-06-08 2018-11-16 云谷（固安）科技有限公司 邦定结构及邦定方法
CN110491852A (zh) * 2019-08-02 2019-11-22 武汉华星光电半导体显示技术有限公司 邦定结构及其制备方法、显示面板
CN110544434B (zh) * 2019-09-04 2022-02-22 云谷（固安）科技有限公司 显示面板及其制作方法、显示装置
CN110943110A (zh) 2019-11-25 2020-03-31 武汉华星光电半导体显示技术有限公司 一种显示装置
CN110930879B (zh) * 2019-11-25 2020-11-10 武汉华星光电半导体显示技术有限公司 一种显示装置
CN113410203A (zh) * 2020-03-17 2021-09-17 群创光电股份有限公司 电子装置
KR20220102696A (ko) * 2021-01-13 2022-07-21 삼성디스플레이 주식회사 표시 패널 및 이를 포함하는 표시 장치

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5502889A (en) * 1988-06-10 1996-04-02 Sheldahl, Inc. Method for electrically and mechanically connecting at least two conductive layers
US5819406A (en) * 1990-08-29 1998-10-13 Canon Kabushiki Kaisha Method for forming an electrical circuit member
JPH04292803A (ja) * 1991-03-20 1992-10-16 Hitachi Ltd 異方導電性フィルム
US5527998A (en) * 1993-10-22 1996-06-18 Sheldahl, Inc. Flexible multilayer printed circuit boards and methods of manufacture
US5840402A (en) * 1994-06-24 1998-11-24 Sheldahl, Inc. Metallized laminate material having ordered distribution of conductive through holes
US5719749A (en) * 1994-09-26 1998-02-17 Sheldahl, Inc. Printed circuit assembly with fine pitch flexible printed circuit overlay mounted to printed circuit board
KR100225398B1 (ko) * 1995-12-01 1999-10-15 구자홍 반도체 범프의 본딩구조 및 방법
US5839188A (en) * 1996-01-05 1998-11-24 Alliedsignal Inc. Method of manufacturing a printed circuit assembly
KR100306116B1 (ko) * 1998-12-31 2001-11-30 구자홍 반도체베어칩의다이렉트어테치본딩방법
US6489573B2 (en) * 2000-06-16 2002-12-03 Acer Display Technology Electrode bonding structure for reducing the thermal expansion of the flexible printed circuit board during the bonding process
KR100315158B1 (ko) * 2000-08-02 2001-11-26 윤덕용 비솔더 플립 칩 본딩용 고신뢰성 비전도성 접착제 및 이를이용한 플립 칩 본딩 방법
WO2003000816A1 (en) * 2001-06-25 2003-01-03 Telephus, Inc. Anisotropic conductive adhesives having enhanced viscosity and bonding methods and integrated circuit packages using the same
JP2003101201A (ja) * 2001-09-27 2003-04-04 Nitto Denko Corp フレキシブル回路基板の製造方法およびフレキシブル回路基板
TW564530B (en) * 2002-07-03 2003-12-01 United Test Ct Inc Circuit board for flip-chip semiconductor package and fabrication method thereof

Also Published As

Publication number Publication date
KR100559937B1 (ko) 2006-03-13
KR20040063547A (ko) 2004-07-14
WO2004064143A1 (en) 2004-07-29
AU2003252543A1 (en) 2004-08-10
CN100356536C (zh) 2007-12-19
TW200414859A (en) 2004-08-01
US20050211464A1 (en) 2005-09-29
JP2006513566A (ja) 2006-04-20
CN1675754A (zh) 2005-09-28

Similar Documents

Publication Publication Date Title
TWI248777B (en) Method for connecting microcircuits and connection structure by the same
JP5311772B2 (ja) 接着フィルム
US7326633B2 (en) Anisotropic conductive film
TWI375967B (en) Adhesive film, connecting method, and connected structure
TW200810243A (en) Conducting particles placement sheet and anisotropic conductive film
TW200848486A (en) Method of connecting electronic component, and connected structure
TWI503394B (zh) 異方性導電膜、接合體、及接合體之製造方法
JP4724369B2 (ja) 導電粒子の製造方法
TWI284844B (en) Noncontact ID card or the like and method of manufacturing the same
TW200942115A (en) Method of connection of flexible printed circuit board and electronic device obtained thereby
CN107112314A (zh) 多层基板
WO2017061539A1 (ja) 異方性導電フィルム及び接続構造体
JP2648712B2 (ja) 異方導電性接着剤およびその異方導電性接着剤を使用した電極間を電気的に接続する方法並びにその方法により形成される電気回路基板
TW201037055A (en) Ambient-curable anisotropic conductive adhesive
JP2002201450A (ja) 接着剤組成物、それを用いた回路端子の接続方法及び回路端子の接続構造
JP2014141679A (ja) 回路部材の接続方法及び回路部材の接続構造
JP6326867B2 (ja) 接続構造体の製造方法及び接続構造体
JP2007018760A (ja) ガラス基板接続用異方導電フィルム
JP2001035248A (ja) 導電性付与粒子及びこれを用いた異方導電性接着剤
JP4402750B2 (ja) 回路電極の接続方法
JP5608504B2 (ja) 接続方法及び接続構造体
JP4240460B2 (ja) 接着剤、接着剤の製造方法及び電気装置
JP4378788B2 (ja) Ｉｃチップの接続方法
JP2001127107A (ja) 接続材料および接続体
JP4056772B2 (ja) ヒートシールコネクタの製造方法

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees