TWI245379B - Semiconductor device and method for manufacturing same - Google Patents
Semiconductor device and method for manufacturing same Download PDFInfo
- Publication number
- TWI245379B TWI245379B TW093114055A TW93114055A TWI245379B TW I245379 B TWI245379 B TW I245379B TW 093114055 A TW093114055 A TW 093114055A TW 93114055 A TW93114055 A TW 93114055A TW I245379 B TWI245379 B TW I245379B
- Authority
- TW
- Taiwan
- Prior art keywords
- semiconductor device
- manufacturing same
- manufacturing
- same
- semiconductor
- Prior art date
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW093114055A TWI245379B (en) | 2004-05-19 | 2004-05-19 | Semiconductor device and method for manufacturing same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW093114055A TWI245379B (en) | 2004-05-19 | 2004-05-19 | Semiconductor device and method for manufacturing same |
Publications (1)
Publication Number | Publication Date |
---|---|
TWI245379B true TWI245379B (en) | 2005-12-11 |
Family
ID=37190086
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW093114055A TWI245379B (en) | 2004-05-19 | 2004-05-19 | Semiconductor device and method for manufacturing same |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWI245379B (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8404587B2 (en) | 2008-06-19 | 2013-03-26 | Micro Technology, Inc. | Semiconductor with through-substrate interconnect |
US8907457B2 (en) | 2010-02-08 | 2014-12-09 | Micron Technology, Inc. | Microelectronic devices with through-substrate interconnects and associated methods of manufacturing |
US9799562B2 (en) | 2009-08-21 | 2017-10-24 | Micron Technology, Inc. | Vias and conductive routing layers in semiconductor substrates |
CN113539946A (en) * | 2020-04-16 | 2021-10-22 | 长鑫存储技术有限公司 | Semiconductor structure and forming method thereof |
CN114336275A (en) * | 2022-03-15 | 2022-04-12 | 度亘激光技术(苏州)有限公司 | Manufacturing method of electrode contact window and preparation method of semiconductor device |
-
2004
- 2004-05-19 TW TW093114055A patent/TWI245379B/en not_active IP Right Cessation
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9917002B2 (en) | 2008-06-19 | 2018-03-13 | Micron Technology, Inc. | Semiconductor with through-substrate interconnect |
US8404587B2 (en) | 2008-06-19 | 2013-03-26 | Micro Technology, Inc. | Semiconductor with through-substrate interconnect |
TWI495071B (en) * | 2008-06-19 | 2015-08-01 | Micron Technology Inc | Semiconductor with through-substrate interconnect |
US9099457B2 (en) | 2008-06-19 | 2015-08-04 | Micron Technology, Inc. | Semiconductor with through-substrate interconnect |
US9514975B2 (en) | 2008-06-19 | 2016-12-06 | Micron Technology, Inc. | Semiconductor with through-substrate interconnect |
US10734272B2 (en) | 2008-06-19 | 2020-08-04 | Micron Technology, Inc. | Semiconductor with through-substrate interconnect |
US10600689B2 (en) | 2009-08-21 | 2020-03-24 | Micron Technology, Inc. | Vias and conductive routing layers in semiconductor substrates |
US9799562B2 (en) | 2009-08-21 | 2017-10-24 | Micron Technology, Inc. | Vias and conductive routing layers in semiconductor substrates |
US8907457B2 (en) | 2010-02-08 | 2014-12-09 | Micron Technology, Inc. | Microelectronic devices with through-substrate interconnects and associated methods of manufacturing |
US10685878B2 (en) | 2010-02-08 | 2020-06-16 | Micron Technology, Inc. | Microelectronic devices with through-substrate interconnects and associated methods of manufacturing |
US11527436B2 (en) | 2010-02-08 | 2022-12-13 | Micron Technology, Inc. | Microelectronic devices with through-substrate interconnects and associated methods of manufacturing |
CN113539946A (en) * | 2020-04-16 | 2021-10-22 | 长鑫存储技术有限公司 | Semiconductor structure and forming method thereof |
CN114336275A (en) * | 2022-03-15 | 2022-04-12 | 度亘激光技术(苏州)有限公司 | Manufacturing method of electrode contact window and preparation method of semiconductor device |
CN114336275B (en) * | 2022-03-15 | 2023-02-21 | 度亘激光技术(苏州)有限公司 | Manufacturing method of electrode contact window and preparation method of semiconductor device |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |