TWI237251B - Optical recording/reproducing method and optical recording medium - Google Patents

Optical recording/reproducing method and optical recording medium Download PDF

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Publication number
TWI237251B
TWI237251B TW092113630A TW92113630A TWI237251B TW I237251 B TWI237251 B TW I237251B TW 092113630 A TW092113630 A TW 092113630A TW 92113630 A TW92113630 A TW 92113630A TW I237251 B TWI237251 B TW I237251B
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Taiwan
Prior art keywords
layer
recording
optical recording
recording medium
dielectric layer
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TW092113630A
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English (en)
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TW200401274A (en
Inventor
Hiroyasu Inoue
Koji Mishima
Masaki Aoshima
Hideki Hirata
Hajime Utsunomiya
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Tdk Corp
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Publication of TW200401274A publication Critical patent/TW200401274A/zh
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Publication of TWI237251B publication Critical patent/TWI237251B/zh

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B7/2433—Metals or elements of Groups 13, 14, 15 or 16 of the Periodic Table, e.g. B, Si, Ge, As, Sb, Bi, Se or Te
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/002—Recording, reproducing or erasing systems characterised by the shape or form of the carrier
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/004—Recording, reproducing or erasing methods; Read, write or erase circuits therefor
    • G11B7/0045—Recording
    • G11B7/00455—Recording involving reflectivity, absorption or colour changes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
    • G11B7/2578—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
    • G—PHYSICS
    • G11—INFORMATION STORAGE
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    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302—Metals or metalloids
    • G11B2007/24304—Metals or metalloids group 2 or 12 elements (e.g. Be, Ca, Mg, Zn, Cd)
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
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    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
    • G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
    • G11B2007/25706—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing transition metal elements (Zn, Fe, Co, Ni, Pt)
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    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
    • G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
    • G11B2007/25708—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing group 13 elements (B, Al, Ga)
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
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    • G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
    • G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
    • G11B2007/2571—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing group 14 elements except carbon (Si, Ge, Sn, Pb)
    • G—PHYSICS
    • G11—INFORMATION STORAGE
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    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
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    • G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
    • G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
    • G11B2007/25711—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing carbon
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    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
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    • G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
    • G11B2007/25713—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing nitrogen
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    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
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    • G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
    • G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
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    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
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    • G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
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    • G11B7/004—Recording, reproducing or erasing methods; Read, write or erase circuits therefor
    • G11B7/005—Reproducing
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    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/254—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of protective topcoat layers
    • G11B7/2542—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of protective topcoat layers consisting essentially of organic resins

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Optical Record Carriers And Manufacture Thereof (AREA)
  • Thermal Transfer Or Thermal Recording In General (AREA)
  • Optical Recording Or Reproduction (AREA)

Description

1237251 (1) 玖、發明說明 【發明所屬之技術領域】 本發明係關於光記錄媒體及利用其之光記錄再生方法 【先前技術】 以往以來，記錄數位資料用之記錄媒體，以 CD(Compact D i s c :光碟）或 D V D ( D i g i t a I Ve r s a t i I e D i s c :數位影音光碟）爲代表之光記錄媒體被廣爲使用。這些 光記錄媒體可以大略分別爲：如 CD-ROM(Read Only Memory :唯讀記憶體）或D V D - R Ο Μ般，無法進行資料之 補記錄或覆寫之形式的光記錄媒體（ROM型光記錄媒體 )，和如CD-R(Recordable:可記錄）或DVD-R般，雖可 做資料之補記錄，但是無法做資料之覆寫的形式之光記錄 媒體（補記錄型光記錄媒體），和如C D - R W ( R e w r i t a b I e :可覆寫）或DVD-RW般，可做資料之覆寫的形式之光記 錄媒體（覆寫型光記錄媒體）。 如廣爲人知般，在ROM型光記錄媒體中，一般係藉 由於製造階段所形成於基板的預設訊坑以記錄資料，在覆 寫型光記錄媒體中，例如，一般係記錄層之材料使用相變 化材料，利用基於該相狀態之變化的光學特性的變化以記 錄資料。 相對於此，在補記錄型光記錄媒體中，一般係記錄層 之材料係使用花青系色素、酉太菁系色素、偶氮色素等 -5- (2) 1237251 有機色素，利用基於其之化學變化（有時，在化學變化外 ，也有伴隨物理變化）的光學特性之變化以記錄資料。 但是，有機色素由於日光等之照射會劣化，所以記錄 層之材料在使用有機色素時，在提高長期間之保存的可靠 性並不容易。在補記錄型光記錄媒體中，爲了提高長期間 保存之可靠性，期望以有機色素以外的材料來構成記錄層 。藉由有機色素以外之材料以構成記錄層的例子，爲所知 悉的是如日本專利特開昭62-204442號公報所記載般， 積層2層之反應層，將其當成記錄層使用之技術。 另一方面，近年來，資料之記錄密度提高，而且，可 以實現非常高的資料傳送率之次世代型的光記錄媒體被提 出。在此種次世代型之光記錄媒體中，爲了實現大容量、 高資料傳送率，必然需要將使用於資料的記錄、再生之雷 射光束的光束點徑縮得很小。此處爲了縮小光束點徑，需 要將聚焦雷射光束用之物鏡的數値孔徑（NA)提升爲0.7 以上，例如0.85之程度，同時使雷射光束的波長短至 450nm以下，例如400nm程度。 但是’如使聚焦雷射光束用之物鏡高NA化時，會產 生光記錄媒體之變形或傾斜的容許度，即傾斜餘裕變得非 常小之問題。傾斜餘裕T在在使用於記錄、再生之雷射光 束的波長爲λ ，雷射光束之光路的光透過層（透明基體） 的厚度爲d時，可由以下之（1)式表示。 Τ= λ /d · ΝΑ3 …（1 ) -6 - (3) 1237251 由（1 )式可以明白，傾斜餘裕因物鏡之NA愈大而 變得愈小。另外’設產生波面像差（訊框像差）之光透過 層（透明基體）的折射率爲η，傾斜角爲0時，波面像差 係數W可由以下之（2)式表示。 W={d · (η2,1) · η2 · sin0 . cos0 · (NA)2}/{2A (n2-sin2 0)3/2 ---(2) 由（1 )式及（2 )式可以明白，爲了使傾斜餘裕變大 ，而且抑制訊框像差的發生，非常有效的方法爲使用於記 錄、再生之雷射光束射入的光透過層（透明基體）的厚度 d變小。 由此理由，在次世代型之光記錄媒體中，爲了 一面確 保足夠之傾斜餘裕，一面抑制訊框像差之發生，乃要求光 透過層（透明基體）的厚度要薄至100//m之程度。因此， 在次世代型之光記錄媒體中，如C D或D V D等現行的光 記錄媒體般，在光透過層（透明基體）上形成記錄層等有 困難，藉由旋轉塗佈法等，在形成於基體上之記錄層等之 上形成薄樹脂層以作爲光透過層（透明基體）之方法正被 檢討著。因此，在次世代型之光記錄媒體的製作上，與由 光射入面側依序進行膜形成之現行的光記錄媒體不同，變 成由與光射入面相反側依序進行膜形成。 【發明內容】 但是，如次世代型光記錄媒體般，在藉由2層反應層 (4) 1237251 構成形成在基體上之記錄層時，與如CD或DVD等現行 的光記錄媒體般，藉由2層反應層構成形成在光透過層（ 透明基體）之記錄層時相比，很淸楚會有訊號再生時所產 生的雜訊之位準容易變大（C/N比容易變小）的問題。 另一方面，由於近年來之對地球環境的關心提高，光 記錄媒體之記錄層的材料也期望選擇環境負擔更小的材料 。另外，爲了提高長期間保存的可靠性，光記錄媒體之記 錄層的材料，期望選擇對於腐鈾、變質等具有足夠承受性 之材料。 本發明之目的在於提供：在次世代型光記錄媒體之記 錄再生系統中，特別有用的新的光記錄再生方法及光記錄 媒體。 [解決課題用手段] 本發明者經過刻意硏究的結果，發現利用S η或Z n S 等之環境顧慮型材料，可以簡單之膜構造進行良好之光記 錄、再生。 即藉由以下之本發明，可以達成上述目的。 (1) 一種光記錄再生方法，其特徵爲：在基板上至 少使記錄補助層和介電質層鄰接存在而形成的記錄層，由 外部照射因應應記錄之資訊而被強度調變之雷射光束，藉 由使上述介電質層之至少其中一部份改變狀態，以使光學 特性改變，而且，讀取伴隨此光學特性之改變的反射率之 變化，以再生上述資訊。 -8- 1237251 (5) (2) 如（1)之光記錄再生方法，其中，上述介電質 層之狀態變化爲結晶成長。 (3) —種光記錄媒體，其特徵爲由具有：基板；及 至少含鄰接於上述基板上而設置的記錄補助層及介電質層 之記錄層所形成，上述介電質層係含引起狀態變化之母材 ，上述記錄補助層係含狀態變化促進材而成，於其上由外 部照射因應應記錄資訊而被強度調變之雷射光束，藉由該 母材狀態變化，反射率變化爲可由雷射光束讀取，而可再 生上述資訊。 (4 )如（3 )之光記錄媒體，其中，上述記錄補助層 含有以由 Sn、Ti、Si、Bi、Ge、C、V、W、Zr、Zn、Mg 、Mn、Ag之中選擇至少一種之元素爲主成分。 (5) 如（3)或（4)之光記錄媒體，其中，上述介 電質層係以由 Al2〇3、AIN、ZnO、ZnS、GeN、GeCrN、 Ce02、SiO、Si02、Si3N4、Ta205 及 SiC 所形成之群中 選擇之至少其中一種介電質材爲主成分。 (6) —種光記錄媒體，其特徵爲由具有：基板；及 至少含鄰接於上述基板上而設置之記錄補助層及介電質層 之記錄層所形成，上述記錄補助層係含有以由S η、T i、 Si、Bi、Ge、C、V、W、Zr、Zn、Mg、Mn、Ag 之中選 擇至少一種之元素爲主成分。 (7) 如（6)之光記錄媒體，其中，上述介電質層係 以由 a 12 〇 3、AI N、Ζ η 0、Z n S、G e N、G e C r N、C e 〇 2、 SiO、Si〇2、Si3N4、Ta2〇5及SiC所形成之群中選擇之至 -9- 1237251 (6) 4其中一種介電質材爲主成分。 【實施方式】 以下，參考圖面，詳細說明本發明之實施形態例。 用於本實施形態例之光記錄再生方法的光記錄媒體 1 0係補記錄型，如第1圖所示般，藉由：基板1 2，及在 基板12上具有記錄補助層1 4及鄰接其兩側之介電質材 層16A、16B而設置之記錄層18，及設置在其上之光透 過層2 0所構成。另外，在光記錄媒體1 0之中央部份設 ®孔。對於具有此種構造之光記錄媒體1 0，藉由從光透 過層2 0側照射雷射光束L B，以進行資料之記錄/再生。 另外，也可只在補助記錄層14之一面設置介電質層16A 或者1 6 B。 基板1 2係擔負作爲確保要求於光記錄媒體1 〇之機 械強度用之基板的功能，在其表面設置凹軌22及/或凸 軌2 4。這些凹軌2 2及凸軌2 4係擔負進行資料之記錄及 再生時之雷射光束的導引軌道之功能。 基板1 2之厚度設定爲約1 1 m m，其材料可以使用種 種之材料，例如，玻璃、陶瓷、或者樹脂。在這些當中， 由成形之容易性的觀點，以樹脂爲佳。此種樹脂可舉：聚 碳酸酯樹脂、丙嫌樹脂、環氧樹脂、聚苯乙稀樹脂、聚乙 烯樹脂、聚丙烯樹脂、矽樹脂、氟系樹脂、A B S樹脂、尿 烷丙烯酸酯等。其中，由加工性等而言，以聚碳酸酯樹脂 最好。 -10- 1237251 (7) 上述介電質層16A、16B，其母材係含··藉由雷射光 束照射等之能量，光反射率等之光學特性被改變之狀態變 化材料而構成。 作爲上述母材之介電質材，只要是會引起狀態變化之 材料，並無特別限制，例如，可以將氧化物、硫化物、氮 化物或者彼等之組合當成主成分使用。更具體爲最好以由 AI2O3、AIN、ZnO、ZnS、GeN、GeCrN、Ce〇2、SiO、 Si〇2、Si3N4、SiC所形成之群中選擇之至少其中一種的 介電質材爲主成分，以由ZnS-Si02所形成之介電質爲主 成分則更好。 另外，所謂「以介電質材爲主成分」係指上述介電質 材之含有率最高。另外，所謂「ZnS-Si〇2」係指ZnS和 Si02之混合物。 另外，介電質材之層厚，則無特別限定，最好爲5〜 2 0 0 n m。此層厚如低於 5 n m時，βρ使母材有充分之狀態 變化，但是無法期望層全體之光反射率等之光學特性的充 分變化，此外，當作訊號之C/N也不足夠。另一方面， 層厚如超過2 0 0 n m時，成膜時間變長，有生產性降低之 虞，另外，由於介電質層16A、16B所具有之應力，而有 發生龜裂之虞。另外，認爲上述記錄補助層1 4之影響不 能及之部份會殘留。 上述記錄補助層1 4係爲促進母材之反應的層，如上 述般，雖然介電質層1 6 A、1 6 B至少鄰接在其一方而構成 ，但是如被具有特定以上之功率的雷射光束照射時’藉由 -11 - (8) 1237251 該熱，構成記錄補助層14之元素對介電質層16A、16B 造成影響，構成介電質層16A、16B之層部份或者全體進 行狀態變化（例如’非晶質往結晶化變化），藉此而成爲 記錄標記。此時，在記錄層1 8中，於形成記錄標記的部 份和其以外之部份中，對於再生光之光學特性大爲不同， 所以利用此可以進行資料之記錄、再生。 另外，也可以伴隨含於記錄補助層之記錄補助材本身 的狀態變化（例如結晶成長）。在此情形下，藉由此變化 ，可以期待C/N之提升。 上述記錄補助層14係以由Sn、Ti、Si、Bi、Ge、C 、V、W、Zr、Zn、Mg、Μη、Ag中至少選擇一種之元素 爲主成分。 此處所言之主成分最好佔有構成記錄補助層1 4之元 素的50 %以上，更好爲80原子％。 如在5 0原子％以下時，使介電質層材料變化之效果 不夠，C/N變小。另外，記錄感度變差，需要以高雷射功 率記錄，所以容易引起膜本身之破壞等，保存可靠性惡化 〇 另外，爲了某種程度抑制良好進行介電質層之狀態變 化所必要的雷射光束之功率，最好爲80原子％以上。 上述記錄補助層1 4之層厚係藉由照射雷射光束之光 束點以使介電質層1 6 A、1 6 B變化所必要之層厚，另外如 積層在必要厚度以上時，需要更多熱量之故，最好爲1〜 50nm，更好爲2〜30nm〇 -12- (9) 1237251 光透過層20係構成雷射光束之射入面的同時，也是 成爲雷射光束之光路的層，其厚度以設定爲1〇〜3〇〇//m 爲佳，更好爲設定爲 50〜150//m。光透過層20之材料 並無特別限定，以利用丙烯系或環氧系等之紫外線硬化型 樹脂爲佳。另外，也可以利用由光透過性樹脂所形成之光 透過性板和各種接著劑或黏著劑以代替使紫外線硬化型樹 脂硬化而成的膜以形成光透過層2 0。 接著，說明上述光記錄媒體1 〇之製造方法的一例。 首先，在形成有凹軌22及凸軌24的基板12上形成 第2(由光射入側起爲第2個）之介電質層16B。在第2 介電質層1 6 B之形成上，例如可以利用使用含第2介電 質層1 6 B之構成元素的化學種子的氣相成長法。此種氣 相成長法例如可舉真空蒸鍍法、濺鍍法等。 接著，在第2介電質層16B上形成記錄補助層14。 此記錄補助層1 4也與第2介電質層1 6 B相同，可以利用 使用含記錄補助層1 4之構成元素的化學種子的氣相成長 法，形成爲簇集狀態。另外，在記錄補助層1 4上形成第 1 (由光射入側起爲第1個）之介電質層1 6 A。此第1介 電質層1 6 A也可以利用使用含第1介電質層彳6 A之構成 元素的化學種子之氣相成長法形成。 最後，在第1介電質層16A上形成光透過層20。光 透過層2 0例如係藉由旋轉塗佈法等使黏度被調整之丙烯 系或者環氧系之紫外線硬化型樹脂形成爲皮膜，照射紫外 線予以硬化等之方法而形成。藉此，完成光記錄媒體之製 -13- (10) 1237251 造。 另外，上述光記錄媒體之製造方法，並不限定爲上述 製造方法，可以使用周知的光記錄媒體之製造所被採用的 製造技術。 接著，說明利用上述光記錄媒體1 0之光記錄再生方 法。 對於光記錄媒體1 0，將具有特定之輸出的雷射光束 L B由光透過層2 0側射入，照射記錄補助層1 4。此時， 聚焦雷射光束LB用之物鏡26的數値孔徑（NA)最好在 〇·7以上，特別是在0·85之程度最好，雷射光束LB之波 長又以在4 5 0 n m以上，特別是4 0 5 n m之程度最好。如此 ，設 λ / NA<640nm 最好。 藉由此種雷射光束L B之照射，構成記錄補助層14 之元素被雷射光束LB加熱，對這些元素所鄰接之介電質 層1 6 A、1 6 B造成影響，部份或者全體產生狀態變化（例 如有非晶質往結晶變化），形成了記錄標記。形成記錄標 記之部份的光學特性和其以外部份（未記錄區域）的光學 特性成爲相當不同之値。因此，依據照射讀取用之雷射光 束時的記錄標記部份和此以外之部份的反射率的不同，可 以進行資料的再生。即利用光學特性之調變，可以進行資 料的記錄、再生。 本發明並不限定於以上之實施形態，在申請專利範圍 所記載的發明範圍內，可有種種之變更可能性，不用說那 些也包含在本發明之範圍內。 -14- (11) 1237251 例如，在關於上述實施形態之光記錄媒體1 0中，記 錄補助層14雖被夾在第1及第2介電質層16A、16B間 ，但是也可以如第2圖所示之實施形態的第2例的光記錄 媒體30般，省略介電質層16A或者16B之一方而構成記 錄層32。 另外，在關於上述實施形態的光記錄媒體1 0、3 0中 ，記錄補助層1 4雖以單層構成，但是本發明之光記錄媒 體並不限定於此，只要是具有同樣效果者，也可由2層以 上所構成。 另外，在使用於上述實施形態之光記錄媒體1 0、30 、4 0中，雖在基板1 2上不具備反射層，但是爲了使形成 記錄標記之區域的反射光的位準和未記錄區域的反射光之 位準變得足夠大，也可以如第4圖所示之光記錄媒體50 般，設置反射層5 2。 反射層5 2係具有反射由光透過層2 0側所射入之雷 射光束，再度由光透過層20予以射出之功能，其厚度以 設定爲5〜3 0 0 n m爲佳，以設定爲1 0〜2 0 0 n m特別好。 反射層52之材料只要是可以反射雷射光束的話，並無特 別限制，例如，可以使用：M g、A卜T i、C r、F e、C 〇、 Ni、Cu、Zn、Ge、Ag、Pt、Au等。這些當中，由具有高 反射率而言，以使用A卜Au、Ag、Cu或這些的合金（Ag 和Cu之合金等）等金屬材料爲佳。藉由設置反射層52, 在光記錄後，由於多重干涉效果，容易獲得高的再生訊號 (C/N 比）。 -15- (12) 1237251 [例I及比較例] 以下，利用例子，更具體說明本發明，但是本發明並 不限定於這些例子。 [光記錄媒體之準備] (例1〜3 ) 藉由以下步驟，製作光記錄媒體。 首先，將厚度：1.1mm、直徑：120mm之聚碳酸酯 S板設定在濺鍍裝置，依序藉由濺鍍法在此聚碳酸酯基板 的光反射層（只是例2 )上形成由ZnS和Si02之混合物 所形成的第2介電質層，由Sn形成之記錄補助層、由 ZnS和Si02之混合物形成之第1介電質層（只是例1、2 )° 接著，藉由旋轉塗佈法在第1介電質層上塗佈丙烯系 紫外線硬化型樹脂，對其照射紫外線，形成光透過層（層 厚：1 0 0 // m )。 另外，在第1介電質層及第2介電質層中，ZnS和 Si〇2之莫耳比率設爲ZnS:Si〇2 = 80:20。 (例4〜1 4 ) 介電質層、基板、光透過層係與實施例1相同，記錄 補助層設爲S η以外之各種金屬或者半金屬，製作光記錄 媒體。 -16· (13) 1237251 (比較例1〜3 ) 對於例4〜1 4，只改變記錄補助層之材料 相同，製作光記錄媒體。 (例1 5〜1 8 ) 將狀態變化促進材層設爲S η，改變介電 ’以製作光記錄媒體。 [記錄、再生] 分別製作上述之光記錄媒體，將其個別設 估裝置（商品名：DDU1000、 公 而且，對於各光記錄媒體，將使用於記錄之雷 長設爲藍色波長域（405nm)、物鏡之 ΝΑ( 設爲 〇 . 8 5，將此雷射光束以記錄讀寫頭內之 光透過層聚光在光記錄媒體，進行光記錄。 此時的記錄訊號之條件設爲：調變方另 R L L、頻道位元長：0.1 2 // m、記錄線速度： 道時鐘：66MHz、記錄訊號：8T。 接著，關於各例及各比較例所製作的狀態 層之材料或層後及介電質層的材料或層厚不同 體，利用先前所述之光碟評估裝置，再生記錄 量此時的再生訊號的C/N比之値。此處，在 ，使用於再生之雷射光束的波長爲405nm，物 ，其他條件 質層之材料 定在光碟評 司製作）。 射光束的波 數値孔徑） 聚光透鏡由 5 _ 3 m /s、頻 變化促進材 之光記錄媒 之資訊，測 再生裝置中 I鏡 NA (數 -17- (14) 1237251 値孔徑）0.85，雷射光束輸出爲0.3mW。 將其結果顯示在表1〜表4。
[表1] 例1 例2 例3 膜構造 第1介電質膜 補助記錄層 第2介電質層 反射層 80 ： 20 (96nm) Sn(3.5nm) 80:20(78nm) 80 ： 20 (30nm) Sn(3nm) 80:20(30nm) APC(100nm) Sn(3nm) 80:20(60nm) 8T C/N(dB) 54 53.6 53.2 「80 : 20」係表示ZnS+Si〇2的ZnS:Si〇2之莫耳比。 此處，ZnS:Si02之記載省略。 ()內之數値係顯示各層之厚度。
-18- (15) 1237251 [表2] 例4 例5 例6 例7 例8 例9 例10 膜構造 第1介電質膜 80:20(20nm) 80:20(20nm) 80:20(60nm) 80:20(20nm) 80:20(60nm) 80:20(20nm) 80:20(20nm) 記錄補助層 Ti(10nm) Bi(6nm) Ge(12nm) Si(10nm) C(12nm) V(10nm) W(10nm) 第2介電質層 80:20(20nm) 80:20(20nm) 80:20(60nm) 80:20(60nm) 80:20(60nm) 80:20(20nm) 80:20(20nm) 反射層 8T C/N(dB) 61.3 47.1 48.1 40.1 38.2 45.6 31 「80:20」係表示ZnS+Si02的ZnS:Si〇2之莫耳比。 此處，ZnS:Si02之記載省略。 ()內之數値係顯示各層之厚度。 [表3] 例11 例12 例13 例14 比較例1 比較例2 比較例3 膜構造 第1介電質膜 80:20(20nm) 80:20(20nm) 80:20(20nm) 80:20(20nm) 80:20(60nm) 80:20(60nm) 80:20(60nm) 記錄補助層 Zr(10nm) 2n(10nm) Mg(10nm) Mn(10nm) Al(10nm) Cu(10nm) Au(12nm) 第2介電質層 80:20(20nm) 80:20(20nm) 80:20(20nm) 80:20(20nm) 80:20(20nm) 80:20(60nm) 80:20(60nm) 反射層 8T C/N(dB) 51.7 37.8 48.3 55.1 1.6 2.4 「80:20」係表示ZnS+Si〇2的ZnS:Si〇2之莫耳比。 此處，ZnS:Si02之記載省略。 ()內之數値係顯示各層之厚度。 -19- (16) 1237251 [表4] 例15 例16 例17 例18 膜構造 第1介電質層 Ta2〇5(60nm) AIN(60nm) ZnS(60nm) Si〇2(60nm) 記錄補助層 Sn(6nm) Sn(6nm) Sn(6nm) Sn(6nm) 第2介電質層 Ta2〇5(60nm) AIN(60nm) ZnS(60nm) SiO2(60nm) 反射層 8T C/N(dB) 48.8 40.1 49.2 49.2 ()內之數値係顯示各層之厚度 o 由這些表所示結果可以明白，在例1〜1 8中，可以獲 得C/N比3 5dB以上之良好構造，利用這些光記錄媒體， 可以獲得能夠充分進行光記錄、再生之結果。 以透過型電子顯微鏡觀察例1之光記錄媒體的記錄、 未記錄部份，在記錄部份可以見到ZnS及Sn之結晶化。 另外’以X射線繞射也在記錄後確認到ZnS及Sn之結晶 化。 在此X射線繞射中，X射線係使用C u - Κ α，管電壓 二50kV、管電流二300mZ。繞射峰値之界定係對照 JCPDS切片。例如，冷一 Sn爲04-0673號之材料，藉由 對照此’可知道一 S n之繞射位置。 以例 1 (ZnS-SiO2(80:20)/Sn/ZnS-SiO2(80:2 0)積層 -20- (17) 1237251 型）之構造，藉由X射線繞射就記錄部份和未記 行解析（參考第4A圖、第4B圖）。 在未記錄時（第4A圖），可見到/3— Sn之 和Z n S之廣繞射峰値，由此，知道S η爲結晶， 晶質。記錄後（第4 Β圖），成爲可以強烈見到 銳繞射峰値，知道引起結晶化。另外，關於S η 到/3 — Sn之繞射峰値，並沒有觀察到Sn02、Sr 峰値。 以例4 ( 80:2 O/Ti/ 80:20積層型）之構造， 線繞射就記錄部份和未記錄部份進行解析（參考 、第5B圖）。 在未記錄時（第5A圖），稍微可見到Z n S 峰値，關於Ti，沒有見到繞射峰値。由此可知g 非晶質。記錄後（第5 B圖），成爲可以見到多 的繞射峰値，知道引起結晶化。另外，出現Zn 値，知道藉由記錄，進行了 ZnS和Zn之結晶化 [發明效果] 如以上說明般，如依據本發明之光記錄再生 記錄媒體，可以藉由以對環境造成之負荷小之單 而且目前爲止並不存在的新方法，以記錄、再生 【圖式簡單說明】 第1圖係顯示關於本發明之實施形態的第1 錄部份進 繞射峰値 ZnS爲非 ZnS之尖 ，也觀察 Ί S之繞射 藉由X射 第5A圖 之廣繞射 J ZnS 係 數之ZnS 之繞射峰 方法及光 純構造， 資料。 例之光記 -21 - (18) 1237251 錄媒體圖。 第2圖係顯示關於本發明之實施形態的第2例之光記 錄媒體圖。 第3圖係顯示關於本發明之實施形態的第3例之光記 錄媒體圖。 第4A圖係顯示例1之光記錄媒體的未記錄部份的X 射線繞射結果圖。 第4 B圖係顯示同上之記錄部份的X射線繞射結果圖 〇 第5A圖係顯示例4之光記錄媒體的未記錄部份的X 射線繞射結果圖。 第5 B圖係顯示例4之光記錄媒體的記錄部份的X射 線繞射結果圖。 主要元件對照表 1 〇 :光記錄媒體 1 2 :基板 1 4 :補助材層 16A、16B :介電質層 1 8 :記錄層 20 :光透過層 22 :凹軌 24 :凸軌 30 :光記錄媒體 -22 - (19) (19)1237251 4 Ο :光記錄媒體 42 :記錄層 5 0 :光記錄媒體 52 :反射層 L B :雷射光束
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Claims (1)

  1. (1) 1237251 拾、申請專利範圍 1 . 一種光記錄再生方法，其特徵爲： 在基板上至少使記錄補助層和介電質層鄰接存在而形 成的記錄層，由外部照射因應應記錄之資訊而被強度調變 之雷射光束，藉由使上述介電質層之至少其中一部份改變 狀態，以使光學特性改變以記錄資訊，而且，讀取伴隨此 光學特性之改變的反射率之變化，以再生上述資訊。 2如申請專利範圍第1項記載之光記錄再生方法，其 中，上述介電質層之狀態變化爲結晶成長。 3. —種光記錄媒體，其特徵爲由具有： 基板；及至少含鄰接於上述基板上而設置的記錄補助 層及介電質層之記錄層所形成，上述介電質層係含引起狀 態變化之母材，上述記錄補助層係含狀態變化促進材而成 ，於其上由外部照射因應應記錄資訊而被強度調變之雷射 光束，藉由該母材狀態變化，反射率變化爲可由雷射光束 讀取，而可再生上述資訊。 4 . 一種光記錄媒體，其特徵爲： 由具有：基板；及至少含鄰接於上述基板上而設置的 記錄補助層和介電質層的記錄層而形成，上述記錄補助層 含有以由 Sn、Ti、Si、Bi、Ge、C、V、W、Zr、Zn、Mg 、Μη、Ag之中選擇至少一種之元素爲主成分之材料。 5 .如申請專利範圍第4項記載之光記錄媒體，其中 ’上述介電質層係以由 AI2O3、AIN、ZnO、ZnS、GeN、 GeCrN、Ce02、SiO、Si02、Si3N4、Ta205 及 SiC 所形成 -24- (2)1237251 之群中選擇之至少其中一種介電質材爲主成分。
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EP1400960A3 (en) 2007-03-07
US20040027983A1 (en) 2004-02-12
KR100678300B1 (ko) 2007-02-01
JP4047074B2 (ja) 2008-02-13
KR20030094050A (ko) 2003-12-11

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