TWI232564B - A COF semiconductor device and a manufacturing method for the same - Google Patents

A COF semiconductor device and a manufacturing method for the same Download PDF

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Publication number
TWI232564B
TWI232564B TW092127422A TW92127422A TWI232564B TW I232564 B TWI232564 B TW I232564B TW 092127422 A TW092127422 A TW 092127422A TW 92127422 A TW92127422 A TW 92127422A TW I232564 B TWI232564 B TW I232564B
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Taiwan
Prior art keywords
resin composition
insulating resin
insulating
semiconductor
wiring patterns
Prior art date
Application number
TW092127422A
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English (en)
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TW200421572A (en
Inventor
Toshiharu Seko
Original Assignee
Sharp Kk
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Publication of TW200421572A publication Critical patent/TW200421572A/zh
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Publication of TWI232564B publication Critical patent/TWI232564B/zh

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    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
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1232564 玖、發明說明： 【發明所屬之技術領域】 本發明係與一種薄膜覆晶（COF)半導體裝置及其製造方 法有關，其中半導體構件係固接於彈性印刷電路並盘之结 ^ 〇 、口 【先前技術】 可任意摺疊之薄膜絕緣帶已應用於COF半導體裝置中， 俾利用其性質上之優點。配置於此薄膜絕緣帶之表面上各 圖案化接線均電氣連結於半導體構件之對應端子。圖案化 接線之外部接頭連結於液晶面板、印刷電路板等。施加銲 錫阻（solder resist)於異於上述處之圖案化接線之外露部分 ’俾確保絕緣。 近年來引領風騷之諸如微凸塊接合（MBB)、非傳導性黏 貼（NCP)等連結與製模方法，以及非等向性傳導性黏貼 (ACP)，均係已知可如先前技藝做為具多引線、窄距 及邊緣接觸之構件之COF半導體裝置之製造方法之一。 這些方法均係將絕緣樹脂合成物插入半導體構件與彈性 印刷電路間之製造方法，俾連結半導體構件之突出電極與 彈性印刷電路等之接線圖案，同時於樹脂中將電極與接線 圖案製模。 依採用上述MBB之習知範例1之COF半導體裝置之製造 方法（例如日本待審專利公開案第S60(l 985)-262430號）示 如圖5(a)至5(d)。依習知範例1，首先，於彈性印刷電路之 接線圖案2上施加絕緣樹脂合成物22處，隨樹脂配送喷嘴8
88267.DOC 1232564 <移動而結合半導體構件之複數個突出電極（凸塊），示如 圖 5(a)至 5(d)。光固化（photo-curing)或熱塑性（therm〇setting) 树脂可供上述絕緣樹脂合成物22使用。此處之圖5(勾至5(d) 。中之代號1係指薄膜絕緣帶，代號5係指銲錫阻。接著， 如圖5(c)所示，將半導體構件3之複數個突出電極9置於接 線圖案2上。而後，於已置於絕緣樹脂合成物22上之半導體 構件3上施壓，使得哭出電極9與接線圖案2間之絕緣樹脂 合成物22擴展，因而僅由進行壓縮即可造成突出電極9與 接線圖案2間之電氣連結。同時，將絕緣樹脂合成物22壓出 半導體構件3周邊。此處以代號21標示之箭號係指壓縮， 而以12標示之箭號則表樹脂流向半導體構件之外周邊。接 著如圖5(d)所示，在此情況下藉由光或熱使絕緣樹脂合成 物22固化，俾將半導體構件3固定於彈性印刷電路上。此處 以代號23標示之箭號係表光照或加熱。 依採用上述MBB之習知範例2之COF半導體裝置之製造 方法（例如日本待審專利公開案第863(1988)_151〇33號）示 如圖6(a)至6(d)。此處在圖6(a)至6(d)中與習知範例丨之圖 5(a)至5(d)中相同之代號係表相同構件。依習知範例2，首 先於彈性印刷電路之接線圖案2上施加絕緣樹脂合成物U 處，隨樹脂配送噴嘴8之移動而結合半導體構件之複數個 突出電極，示如圖6(a)至6(d)。熱塑性樹脂可供上述絕緣 樹脂合成物22使用。接著，如圖6(c)所示’將半導體構件3 之各突出電極9置於接線圖案2上。而後，利用脈衝加熱工 /、（未圖示）將已置於纟巴緣樹脂合成物22上之半導體構件3
88267.DOC 1232564 上壓制於彈性印刷電路，俾將接線圖案2上之絕緣樹脂合 成物22壓出半導體構件3周邊。接著如圖6(d)所示，供給能 量於上述脈衝加熱工具，俾於壓制半導體構件3於彈性印 刷電路之情況下，對半導體構件3加熱，藉此將絕緣樹脂合 成物22熱塑化，俾固定半導體構件於彈性印刷電路上。同 時電氣連結各突出電極9與接線圖案2。此處以代號24標示 箭號。圖6(d)係表在施壓情況下知脈衝加熱。 一個與習知範例1有關之問題在於在施加絕緣樹脂合成 物22於薄膜絕緣帶！之後，將絕緣樹脂合成物22固化時產 生之氣泡13(示如白點），壓縮進行時半導體構件3會與之接 觸（見圖5(d))。上述情況之進一步細節如後述：可能引發氣 泡13之因素為諸如a)、b)及c) : a)當以壓縮進行使半導體構 件3接觸時，因以樹脂配送噴嘴8施加之隆起型式之絕緣樹 脂合成物22之樹脂線間之間隙，或因施加絕緣樹脂合成物 22於具有或不具接線圖案2之區域間造成樹脂表面不均勻 (見圖5(b))，導致空氣被封入（誤填入）；b)在固化絕緣樹脂 合成物22時產生之排氣（outgassing);及c)將具有被吸收之 濕氣之薄膜絕緣帶1烘乾時產生之濕氣。如上述，例如可能 視氣泡13發生程度或在絕緣樹脂合成物22固化後具有氣泡 1 3之COF半導體裝置之使用情況造成諸如突出電極9間之 漏電流以及半導體構件之鋁電極腐蝕等缺點。 此外，在加壓工具持續加熱或加熱工具係如習知範例2 中採用之脈衝加熱之情況下，施加絕緣樹脂合成物22後其 表面如同習知範例1 (見圖6(b))般不均勻。因此，會有絕缘
88267.DOC 1232564 树脂合成物22固化後殘留氣泡13之困擾，示如圖6(d)之白 點。 【發明内容】 本發明可解決上述問題並提供c〇F半導體裝置及其製造 方法，其中在半導體構件與薄膜絕緣帶之接線圖案結合與 氣模時，在絕緣樹脂合成物中發生之氣泡及/或誤填入均得 以減少而具高可靠性。 為解決上述問題，依本發明之COF半導體裝置之製造古 法包括： ° 訑加絶緣樹脂合成物於配置複數個接線圖案之表面上 之絕緣帶之展面之步驟（A); 在忒絕緣樹脂合成物尚未固化之情況下， 曲 丁子目豆 構件至該等接線圖案之步驟（B);及 /定該半導體構件㈣等接線圖案，俾藉由固化該絕緣 树脂合成物而電氣連結之步驟（C); 二方法進步包含在固化前及/或施加該絕緣樹脂合成 物後，自背表面側將絕緣帶預熱之步驟（D)。 *:即依本發明將絕緣樹脂合成物預熱至得以經由已自絕 緣帶之背表面側預熱之絕緣帶移除氣泡之溫度，其中在： 加絕緣樹脂合成物前、期間及/或後，不具接線圖案。因此 得以預先㈣絕緣帶所吸收之濕氣以及樹制化時之排氣 ’ ^將絕緣樹脂合成物平坦化，以減少樹脂隆起不均句， 俾當對置於絕緣樹脂合成物上之半導體構件施壓時，空氣 易於逸出。爰此，在結合半導體構料絕緣帶上之接線才圖
88267.DOC 1232564 :及以絕緣樹脂合成物製模時，可大幅減少在絕緣樹脂合 、物中之氣泡及/或誤填入。因而得以達成具高可靠性之 C〇F半導體裝置’其中在結合半導體構件於絕緣帶上之接 線圖案及以絕緣樹脂合成物製模時，可大幅減少在絕緣樹 脂合成物中之氣泡及/或誤填人，且其中不會發生半導體構 件電極間之洩漏以及半導體構件之鋁電極之腐蝕。a 自下揭詳細描述更易於瞭解本申請案之這些及其它目的 。但應知該詳細描述係用以指示本發明之較佳具體實施例 之特定範例，僅供闡釋之用，熟係此技藝者在此詳細描述 疋指引下，即易於瞭解本發明之精神與範疇内之各種變化 及改良。 【實施方式】 雖因本發明之薄膜絕緣帶具絕緣性質而未特別限制期類 型，只要於薄膜絕緣代表面上形成接線圖案（而後在部分情 況下簡稱為接線）即可《但薄膜絕緣帶可自由摺疊較佳，且 採用諸如聚硫亞氨或Kapton等聚硫亞氨為基之絕緣帶較佳 。雖然並未對聚硫亞氨為基之絕緣帶做特別限制，但仍以 薄型較佳，以確保高彈性，具體而言，厚度範圍自15微米 至40微米較佳，更具體而言，採用厚度為15微米、2〇微米 、25微米、38微米或40微米較佳。 雖未特別限定接線圖案類型，只要依半導體裝置之結構 或應用而於適當圖案中形成並具傳導性即可，例如可引用 薄金屬膜製接線。雖未特別限定充作此接線之金屬類型， 但以採用銅較佳。接線可為薄膜型式，其中採用採用之銅
88267.DOC 1232564 泊之厚度範圍在5至18微米較佳，更具體而言，可適當選用 厚度為5微米、8微米、9微米、12微米或18微米。此外，在 接線係由銅箔形成之情況下，在於表面電鍍以避免接線衰 敗較佳。雖未特別限定電鍍金屬類型，但以採用鍍錫、鍍 金等較佳。 並未特別限定用以於上述聚硫亞氨為基之絕緣帶上形成 接線圖案之方法類型以及用以於接線圖案表面電路之方法 類型，但以採用此技藝中熟知之方法較佳。藉由蝕刻聚硫 亞氨為基之絕緣帶而形成任意接線圖案，將厚度為例如5 至18微米之銅箔附著於接線圖案，接著可於接線表面施行 鍍錫或鍍金。此外，聚硫亞氨、氨基甲酸酯等具絕緣性質 者’均適於施加於接線圖案之預定暴露部位以外之區域， 諸如用以結合半導體構件之接線圖案區以及外部接頭區， 俾形成銲錫阻使得各接線彼此絕緣。如此一來，即可形成 例如厚30至80微米之彈性印刷電路。 未特別限定固接於此彈性印刷電路之半導體構件類型， 只要其係可依半導體裝置應用，納入多種積體電路之組態 即可。例如：液晶顯示驅動器、功率IC、控制器等均可採 用，尤其可採用具有大量窄距之突出電極（凸塊）之半導體 構件，其中電氣連結至接線圖案之電極係以突出物型式形 成。 在此位於半導體構件中之突出電極，電氣連結半導體構 件與接線。雖然以例如凸塊做為突出電極較佳，對突出電 極類型並未特別限制。此外，雖未特別限制凸塊材料，2 88267.DOC -10- 1232564 以採用具傳導性並可適當連結至接線之金較佳。 以熱塑性樹脂或光固化樹脂如環氧化物或丙晞酸基樹脂 供絕緣樹脂合成物之用，俾經由突出電極固定半導體構件 於接線而製作電氣連結。在採用此類樹脂之情況下，僅以 光罩或加熱即可輕易將絕緣樹脂合成物固化。 在施加絕緣樹脂合成物於絕緣帶表面之步驟中，可以 抽真空裝置排抽或抽吸絕緣帶背表面。在此方法中，可於 平坦不具起伏而支撐絕緣帶之條件下，施加絕緣樹脂合成 物於絕緣帶。因此得以降低樹脂不均勻，俾當對置於絕緣 树月曰口成物上之半導體構件施壓時，空氣易於逸出，並可 進一步降低自封入空氣導致之誤填入程度。 此外，在以上4本發明之COF半導體裝置之製造方法之 步驟⑷中，施加於絕緣代之半導體構件之結合區之中心 位之絕緣樹脂合成物厚度，可較施加於半導 區之外圍部位者厚。 口 再者’可於_配送噴嘴在崎代之半 面區内::時’施加隆起型式之絕緣樹脂合成物於絕 =:+:ί大配送…樹脂配送喷嘴可於上迷本i +導ta裝置之製造方法之步驟 之絕緣樹脂合成物之線寬，俾降低總、= 精匕心所施加之樹脂線間之凹處數，俾進一 些樹脂凹處導致之誤埴入。 /牛低因這 配送喷嘴之移動料(軌n f她加樹脂時選擇樹脂 Θ 夕動路、，泉（軌跡），俾將所施加之樹 取低，且其在樹脂配送噴 / 土 丁玎、、、巴緣Υ斫同，故可將
88267.DOC 1232564 所施加之樹脂線數降至最低。 此外，在依本發 日口成物於彈性 時，可預先將預定數量之樹脂凝結 、“各 (、、、巴緣樹脂合成物）中。未特別限制 、 曰 ^ ^ ^ 可力曰/焚結延遲劑，可 使用此技藝中熟知之延遲劑。因 人忐必< ，自施加絕緣樹脂 口成物土彈性印刷電路至以壓縮固接半導體構件於 案期間變長。故即使在絕緣帶預埶時 、7 、_、 、…、f間較施加絕緣樹脂合 成:長^兄下，亦不致於半導體構件之電極與絕緣帶之 接、、泉圖案間發生電氣連結錯誤。 再者，當纟本發明施加絕緣數施合成物日争，可 導性微粒散佑於絶缓谢人出从士 、 、 双忡m⑽日合成物中。金塗佈樹脂微粒、錄 微粒等例如直徑3至職米之微粒，均可做為傳導性微粒。 在此情況下，在例如厚5微米之樹脂中，將傳導性微粒之微 粒密度設定為每立方毫米2_至12_個微粒。因而在樹 脂製模後’得以將部分傳導性微粒插人半導體構件之電極 與絕緣帶之接線@案間，故得以避免缺陷連結無誤。此處 在傳導性微粒之微粒密度低於上述範圍之情況下，可能容 易發生上述缺陷連結；在傳導性微粒之微粒密度高於上述 範圍之6況下，則會降低絕緣樹脂合成物對接線圖案之各 4位以及半導體構件之電極間之絕緣性質。 依本發明之COF半導體裝置之製造方法中，在施加絕緣 树脂合成物前、期間及/或後，在將絕緣樹脂合成物預熱至 知以經由已自絕緣帶之背表面側預熱之絕緣帶移除氣泡之
步驟（D)中之預熱溫度可設定微60°C至150°C，設定於80°C
88267.DOC -12- 1232564 至100 C更佳。因此得以在不對彈性印刷電路造成熱影響且 不致使熱塑性樹脂凝結下，降低樹脂黏性，俾可達成充分 平順’並可預先移除絕緣帶所吸收之濕氣或於樹脂固化時 排氣。此處無法預先充分移除絕緣帶所吸收之濕氣或於樹 脂固化時排氣’亦無法達成平順，故在預熱溫度低於6(rc 下，各易發生树脂誤填入或殘留氣泡，造成絕緣樹脂合成 物固化之風險，在預熱溫度超過丨50艽下，則可能導致半導 體構件對接線圖案之電氣連結缺陷。 此外，在依本發明之絕緣樹脂合成物尚未固化下，以加 壓使半導體構件與接線圖案接觸之步驟⑻中，經由加壓進 行，在加熱情況下之半導體構件可能與接線圖案接觸。在 此情況下，係以熱塑性樹脂做為絕緣樹脂合成物。可採用 此技藝中熟知之單t在對半導體構件加熱並以加壓進行 將半導體構件SI接於彈性印刷電路時輸送半導體構件。在 此步驟（B)中〈加熱溫度係使熱塑性樹脂得以充分凝結之 溫度，並於例如為環氧化物為基之樹脂下，將該溫度設定 於近乎250°C。 …〜·，、〜亍净體衮置包括 在配置複數個接線圖案之表面上之薄絕緣帶；—個半導 構件；及具樹脂凝結延遲劑之絕緣樹脂合成物，俾於該 導fa構件電氣連結於該接線 文水口木< h，兄下，固足該半導| 構件於該接線㈣，可建立高度可叫導體裝置. 合半導體構料薄絕緣帶之接線圖案以及樹㈣ 挺時，仔以減少在絕緣樹脂合成物中發生之氣泡與誤埴入
88267.DOC -13- 1232564 此外，該絕緣樹脂合成物進一步包含在分散條件下之傳 導性微粒。 以下將參閱圖式描述依本發明之具體實施例之c〇f半導 體裝置及其製造方法。但本發明不以所述具體實施例為限。 【具體實施例1】 圖1⑷至圖1⑷係依本發明之具體實施例丨之c〇F半導體 裝置之製造方法之步驟圖。此處之圖！⑷至^⑷顯示1體 實施m ’其中與上述習知範例以2(圖5⑷至5⑷及圖6⑷ 至6(d))相同之構件係以相同代號表之。 所提供之具體實施例kC〇F半導體裝置示如圖i⑷，具 備下列配置1)、2)、3)及4) : 1)薄絕緣帶1，其表面配置複 數個接線圖案2; 2)用以塗佈除預定區域如半導體構件結合 區以及接線圖案2中之外部接頭部以外之接線圖案2俾供絕 緣用之銲錫阻2; 3)具複數個突出電極9之半導體構件3;及 4)在以半導體構件3之突出電極9做為電氣連結之情況下， 用以固定半導體構件3於接線圖案2之絕緣樹脂合成物7， 其中鍍金屬層（未圖示）位於接線圖案2表面。此外，具有絕 緣帶1、接線圖案2及銲錫阻5之彈性印刷電路之平坦表面 結構’示如圖3。 接著描述具體實施例1之咖半導體裝置製造方法。圖 / (b)》員示施加樹脂之步驟（A);圖l(c)顯示施加樹脂 後之平化及氣泡移除，·圖i⑷顯示藉由加麼而接觸半導 、 ）’及圖i(e)_示樹脂固化之步騾（c)。 、先i圖1(a)與1(b)所示，依具體實施例丨之製造方法
88267.DOC -14- !232564 平台上安裝彈性印刷電路㈣示）。此平台可為加 二平口。而後以加教平合式4 絕緣帶!之背表面(；導體構二所於80至1〇〇。口，將 、卞等把構件所固接之表 連結半導體構件）預熱，如代策斤 且，、上並未 w ^ a 唬6所禚前號。之後施加絕緣 緣•曰已預先加入樹脂凝結延遲劑）於結合區4,絕 。：此，主:、構件固接並連結於該絕緣樹脂合成物7表面 例t二二況/，以熱塑性樹脂做為絕緣樹脂合成物7。在以 嘴“/Μ動裝置(未圖示)來回移動金屬製之樹脂配送喑 =卑施加絕緣樹脂合成物7之同時，散佈歡流量之絕緣 树月曰&成物7於結合區4。 表=得以於固接與連結半導體構件前，自絕緣帶！之背 月匕人ΙΓΓ預熱’猎此移除絕緣帶1吸收之濕氣以及絕緣樹 :成：7固化時之排氣，如代號1。所示箭號，示如圖1(c) 不絕緣樹脂合成物7換平，俾降低樹脂表面之 脂合成物7之彈性印刷電路預在將已施加絕緣樹 :二 =??半導體構件3加熱。藉此將壓制半 上之各接=安大出电極9並使之電氣連結於絕緣帶1表面 同:各 俾固接半導體構件3於彈性印刷電路。 方挤出，將部分絕緣樹脂合成物7自半導體構件3下 帶出’如代號12所示箭號’俾於半導體構件3側邊形成束 88267.D〇c -15 - 1232564 絕緣樹脂合成物7為歷經加熱之半導體構件3之熱量以及 歷經預熱之絕緣帶1之敎量所裁频 少$ …里所熱塑，而仵以鑄模及固持該 +導體構件3。此處係於後製財連結液晶面板、印刷電 路板等至接線圖案2之外部接頭。 、依本發明之具體實施例i:預先移除絕緣釣吸收之濕氣 以及絕緣樹脂合成物7固化時之排氣；將所施加之絕緣樹 脂合成物7平坦化，俾降低樹脂表面之不均句度；以及所採 用（絕緣樹脂合成物7具有樹脂凝結延遲劑；因此，當結合 +導體構件3之突出電極9與絕緣⑹之接線圖案2以及以絕 緣樹脂合成物製模時發生之氣泡與誤填人均較先前技藝降 %或更低°此外’即使在絕緣樹脂合成物7預熱期長之 ^況下，半導體構件3之突出電極9亦可電氣連結至 案2無誤。 【具體實施例2】 圖2^至2(e)係依本發明之具體實施例2之⑽半導體裝 置之製造方法之步驟圖；圖3係依本發明之具體實施例2之 樹脂施加之製程之謝日匕 义树知施加線圖。此處之圖2(a)至2(e)及 圖3顯示具體實施例2,其中與具體實施m(圖i⑷至1(e)) 相同<構件係以相同代號表之。 斤形成心具m貫施例2之c〇f半導體裝置與具體實施例1 具相同邵件及結構’示如圖2⑷，但製造具體實施例2之 COF半導體裝置時之
树纟日她加製程異於具體實施例1。亦 即在具體貫施例2中，者、A *她加具樹脂凝結延遲劑之熱塑性 絕緣樹脂合成物7於結合區4(連結與固接絕緣帶i之半導
88267.DOC -16- 1232564 體構件3處）時’絕緣樹脂合成物7之施加於結合區4係始自 2側（如代號15所示箭號），並向中央移動（如代㈣所示箭 :曰夕卑使她加*中央之絕緣樹脂合成物7量較施加於週邊 、夕I在中央處之施加厚度最厚，示如圖2⑷、冲) 及，3在具體貫施例2中’藉此得以於固接半導體構件3 )巴’彖π 1時，使空氣易於逸出。此外，得以降低絕緣帶【 之起伏，導致在施加絕緣樹脂合成物7前，利用抽真空裝置 « D自絕緣帶i背表面抽真空而得以平坦支撐絕緣帶工 ，如代號17所示箭號。而後利用具廣配送出口之樹脂配送 噴嘴18施加絕緣樹脂合成物7，解此降低在絕緣帶}中因高 低起伏造成之樹脂表面部均勾，同時得以減少以廣喷嘴Μ 施加之隆起型式之樹脂線數（在此情況下為三線），俾降低 樹脂凹處數。 爰此，如圖2(c)所示，當將絕緣樹脂合成物7平坦化時， 已施加於彈性印刷電路之絕緣樹脂合成物7具&緩山狀外 型，其中中央部最高。接著如圖2(d)與2(e)所示，當於已位 於絕緣樹脂合成物7上之半導體構件3施壓時，間隙中之空 氣易於逸出。因此，在熱塑化後，得以進一步減少在絕緣 樹脂合成物7中之氣泡與誤填入。在此除上述之外，得以預 先移除絕緣帶1吸收之濕氣以及絕緣樹脂合成物7熱塑化時 之排氣’並採用具樹脂凝結延遲劑之絕緣樹脂合成物7，概 與具體實施例1相同。因此，當結合半導體構件3之突出電 極9與絕緣帶1之接線圖案2以及以絕緣樹脂合成物製模^ 發生之氣泡與誤填入均較先前技藝降低3〇%或更低。即使 88267.DOC •17- 1232564 在絕緣樹脂合成物7加熱期長之情況下，半導體構件3之突 出電極9亦可電氣連結至接線圖案2無誤。 【具體實施例3】 圖4⑷至4(e)係依本發明之具體實施例3之c〇f半導體裝 置之製造方法之步驟圖。此處之圖4⑷至4⑷顯示具體^ 例3,其中與具體實施例i(圖！⑷至}⑷)及具體實施例· 2(a)至2(e)及圖3)相同之構件係以相同代號表之。 所形成之具體實施例3之c〇F半導體裝置與依具體實施 例2之製造方法之具體實施例2中之結構相同，示如圖4⑷ 仁氩k COF半導體裝置時之使用之絕緣樹脂合成物1 9異 於具體實施例⑻。亦即在依具體實施例3施加絕緣樹脂 合成物19時’預先於熱塑性絕緣樹脂合成物19中散体傳導 性微粒20。在此情況下’以直徑5微米之金塗佈樹脂微粒做 為傳導性微粒20,其中在厚5微米之樹脂中，傳導性微粒2〇 •^微粒密度近乎為每立方毫米·，此處在_⑷至*⑷ 中所示絕緣樹脂合成物19中之白點均表傳導性微粒^。 採用之絕緣樹脂合成物19中散佈有上述傳導性微粒2〇， 並當在已置於絕緣樹脂合成物19上之半導體構件3施壓時 ，經由傳導性微粒20將半導體構件3之突出電極糧於接線 圖本2使仔半導體構件3固接於彈性印刷電路，示如圖*⑷ 至4(e)。因此，得以避免半導體構件3與接線圖案2間連結 中之缺陷無誤。在此具體實施例3中，得以預先移除絕緣帶 1吸收之濕氣以及絕緣樹脂合成物19熱塑化時之排氣；將已 施加於彈性印刷電路之絕緣樹脂合成物7平坦化而且和緩
88267.DOC -18 - 1232564 山狀外型’其中中央部最高；及與具體實施例1及2相同， 採用具樹脂凝結延遲劑之絕緣樹脂合成物。因此，即使在 、、、巴緣树脂合成％ 7預熱期長之情況τ，當結合半導體構件3 •^哭出電極9與絕緣帶〗之接線圖案2以及以絕緣樹脂合成 物7製模時發生之氣泡與誤填入均較先前技藝降低鳩或 更低，且半導體構件3之突出電極9亦可電氣連結至接線圖 案2無誤。 【其它具體實施例】 ” 1·雖然上述具體實施例丨至3中闡釋係以熱塑性樹脂做為 絕緣樹脂合成物之情況，但採用光固化樹脂亦可。在此情 況下，當施塵於已位於彈性印刷電路之樹脂上之半導體^ 件時，可不用對半導體構件加熱。此外，絕、緣帶可為^透 光，俾當以光照射光固化樹脂時，可自絕緣帶背側對光固 化樹脂實施光照而使之固化。 2.雖然上述具體實施例丨至；^中闡釋係自樹脂預施加步驟 至樹脂固化步驟依序施行絕緣樹脂合成物預熱之情況，但 亦可於施加樹脂前、期間及後或其組合期間，施行選擇性 預熱。 3 ·依本發明減少氣泡及誤填入之效應，會因下列組合而 具些微差異：絕緣樹脂合成物之預熱溫度及預熱期；絕緣 樹脂合成物種類以及絕緣樹脂合成物之固化方法與具抽真 空與否°因此’期依所製造之產品大小、圖案及使用方法 選擇上述組合，俾達最佳效果。 依本發明，在施加絕緣樹脂合成物於接線圖案中之半導
88267.DOC -19- 1232564 :構:牛：：區前、期間及/或後，將未配置接線圖案之絕緣 π之'^刀月表面預熱。藉此預先移除絕緣帶所吸收之濕氣 、、，及私f知q化時之排氣，並將絕緣樹脂合成物平坦化（撫 平），以減少所施加之線間之樹脂凹處，俾當對位於絕緣樹 脂合成物^之半導體構件施壓時，空氣易^逸出。爰此， 可獲得具高可靠性之咖半導體裝置，其中當結合半導體 構件與絕緣帶之接線圖案以及以絕緣樹脂合成物製模時， 得以減少在絕緣樹脂合成物中之氣泡及/或誤填入，其中半 導體構件之電極及半導體構件之銘電極腐触均不 致發生。 【圖式簡單滅明】 圖1(a)至圖l(e)係依本發明之具體實施例iicoF半導體 裝置之製造方法之步驟圖； 圖2(a)至2(e)係依本發明之具體實施例2之〇〇17半導體裝 置之製造方法之步驟圖； 圖3係依本發明之具體實施例2之樹脂施加之製程之樹 脂施加線圖； 圖4(a)至4(e)係依本發明之具體實施例3之c〇F半導體裝 置之製造方法之步驟圖； 圖5(a)至5(d)係依採用MBB之習知範例1之c〇f半導體裝 置之製造方法圖；及 圖6(a)至6(d)係依採用MBB之習知範例2之c〇F半導體裝 置之製造方法圖。 88267.DOC -20- 1232564 【圖式代表符號說明】 1 薄膜絕緣帶 2 接線圖案 3 半導體構件 4 突出電極 5 銲錫阻 6 預熱 7 絕緣樹脂合成物 8 樹脂配送噴嘴 9 突出電極 10 絕'緣樹脂合成物移除方向 11 壓制 12 樹脂流向 13 氣泡 15 施加絕緣樹脂合成物 16 移動絕緣樹脂合成物 17 抽真空 18 噴嘴 19 絕緣樹脂合成物 20 傳導性微粒 21 壓縮 22 絕緣樹脂合成物 23 光照
88267.DOC -21 -

Claims (1)

1232564 拾、申請專利範園： L 一種薄膜覆晶（COF)半導體裝置之製造方法，包括·· 施加一絕緣樹脂合成物於配置複數個接線圖案之表 面上之絕緣帶之表面之步驟（A); 在該絕緣樹脂合成物尚未固化之情況下，壓接一半導 體構件至該等接線圖案之步騾（B); 固足該半導體構件於該等接線圖案，俾藉由固化該絕 緣樹脂合成物而電氣連結之步驟（c);及 在固化前及/或施加該絕緣樹脂合成物後，自背表面側 將絕緣帶預熱之步驟（D)。 2·如申請專利範圍第！項之方法，其中在加熱條件下，藉由 在步驟（B)中進行之施壓，使得該半導體構件與該接線圖 案接觸。 3·如申請專利範圍第1項之方法，其中將步驟（D)中之預熱 溫度設定於60°c至150°C。 4·如申凊專利範圍第1項之方法，其中將樹脂凝結延緩劑 入#袁絶緣樹脂合成物中。 5· —種薄膜覆晶（COF)半導體裝置之製造方法，包括·· 施加一絕緣樹脂合成物於配置複數個接線圖案之表 面上之絕緣帶之表面之步驟（A); 在該絕緣樹脂合成物尚未固化之情況下，壓接一半導 體構件至該等接線圖案之步驟（B); 固足孩半導體構件於該等接線圖案，俾藉由固化該絕 緣樹脂合成物而電氣連結之步驟（c);其中 88267.DOC 1232564 就步驟（A)中施加之該絕樹脂合成物之厚度而言，施 加於該絕緣帶之半導體構件之結合區之中央部之厚度較 施加於該半導體構件之結合區之外周邊部之厚度厚。 6. —種薄膜覆晶（COF)半導體裝置之製造方法，包括： 施加一絕緣樹脂合成物於配置複數個接線圖案之表 面上之絕緣帶之表面之步驟（A); 在該絕緣樹脂合成物尚未固化之情況下，壓接一半導 體構件至該等接線圖案之步驟（B);及 固定該半導體構件於該等接線圖案，俾藉由固化該絕 緣樹脂合成物而電氣連結之步驟（C);其中 該絕緣_帶之該背表面為步騾（A)中之抽真空工具所排 抽或抽吸。 7. —種薄膜覆晶（COF)半導體裝置之製造方法，包括： 施加一絕緣樹脂合成物於配置複數個接線圖案之表 面上之絕緣帶之表面之步驟（A); 在該絕緣樹脂合成物尚未固化之情況下，壓接一半導 體構件至該等接線圖案之步驟（B);及 固定該半導體構件於該等接線圖案，俾藉由固化該絕 緣樹脂合成物而電氣連結之步驟（C);其中 在樹脂排放噴嘴於該絕緣帶之該半導體構件之結合 區内移動之同時，將該絕緣樹脂合成物以隆起型式施加 於該絕緣帶之表面，其中該樹脂排放喷嘴具有在步驟（A) 中使用之廣或大排放出口。 8·如申請專利範圍第4項之方法，其中散佈一傳導性微粒於 88267.DOC 1232564 該絕緣樹脂合成物中。 9. 一種薄膜覆晶（COF)半導體裝置，包括： 在配置複數個接線圖案之表面上之薄絕緣帶； 一個半導體構件；及 一具一樹脂凝結延遲劑之絕緣樹脂合成物，俾於該半 導體構件電氣連結於該接線圖案之情況下，固定該半導 體構件於該接線圖案。 10. 如申請專利範圍第9項之裝置，其中該絕緣樹脂合成物進 一步包含在分散條件下之傳導性微粒。 88267.DOC
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