TWI232496B - Integrated circuits with air gaps and method of making same - Google Patents
Integrated circuits with air gaps and method of making same Download PDFInfo
- Publication number
- TWI232496B TWI232496B TW092131566A TW92131566A TWI232496B TW I232496 B TWI232496 B TW I232496B TW 092131566 A TW092131566 A TW 092131566A TW 92131566 A TW92131566 A TW 92131566A TW I232496 B TWI232496 B TW I232496B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- metal wire
- wire pattern
- patent application
- dielectric layer
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 28
- 229910052751 metal Inorganic materials 0.000 claims abstract description 143
- 239000002184 metal Substances 0.000 claims abstract description 143
- 238000000034 method Methods 0.000 claims abstract description 60
- 230000008569 process Effects 0.000 claims abstract description 29
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 238000005530 etching Methods 0.000 claims description 27
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 25
- 239000010931 gold Substances 0.000 claims description 24
- 229910052737 gold Inorganic materials 0.000 claims description 24
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 230000004048 modification Effects 0.000 claims description 2
- 238000012986 modification Methods 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- QUCZBHXJAUTYHE-UHFFFAOYSA-N gold Chemical group [Au].[Au] QUCZBHXJAUTYHE-UHFFFAOYSA-N 0.000 claims 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 154
- 229920002120 photoresistant polymer Polymers 0.000 description 13
- 238000010586 diagram Methods 0.000 description 10
- 230000005611 electricity Effects 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 4
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 241000251468 Actinopterygii Species 0.000 description 1
- 241001327708 Coriaria sarmentosa Species 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- CCAZWUJBLXKBAY-ULZPOIKGSA-N Tutin Chemical compound C([C@]12[C@@H]3O[C@@H]3[C@@]3(O)[C@H]4C(=O)O[C@@H]([C@H]([C@]32C)O)[C@H]4C(=C)C)O1 CCAZWUJBLXKBAY-ULZPOIKGSA-N 0.000 description 1
- UMVBXBACMIOFDO-UHFFFAOYSA-N [N].[Si] Chemical compound [N].[Si] UMVBXBACMIOFDO-UHFFFAOYSA-N 0.000 description 1
- OBNDGIHQAIXEAO-UHFFFAOYSA-N [O].[Si] Chemical compound [O].[Si] OBNDGIHQAIXEAO-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000035622 drinking Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000007775 late Effects 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/7682—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing the dielectric comprising air gaps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/5329—Insulating materials
- H01L23/53295—Stacked insulating layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/295,062 US6917109B2 (en) | 2002-11-15 | 2002-11-15 | Air gap structure and formation method for reducing undesired capacitive coupling between interconnects in an integrated circuit device |
US10/295,080 US7138329B2 (en) | 2002-11-15 | 2002-11-15 | Air gap for tungsten/aluminum plug applications |
US10/295,719 US7449407B2 (en) | 2002-11-15 | 2002-11-15 | Air gap for dual damascene applications |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200415704A TW200415704A (en) | 2004-08-16 |
TWI232496B true TWI232496B (en) | 2005-05-11 |
Family
ID=32719000
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW092131566A TWI232496B (en) | 2002-11-15 | 2003-11-11 | Integrated circuits with air gaps and method of making same |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP2004172620A (ja) |
CN (1) | CN100372113C (ja) |
TW (1) | TWI232496B (ja) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6838354B2 (en) * | 2002-12-20 | 2005-01-04 | Freescale Semiconductor, Inc. | Method for forming a passivation layer for air gap formation |
DE102005039323B4 (de) * | 2005-08-19 | 2009-09-03 | Infineon Technologies Ag | Leitbahnanordnung sowie zugehöriges Herstellungsverfahren |
US20080265377A1 (en) * | 2007-04-30 | 2008-10-30 | International Business Machines Corporation | Air gap with selective pinchoff using an anti-nucleation layer |
US7879683B2 (en) * | 2007-10-09 | 2011-02-01 | Applied Materials, Inc. | Methods and apparatus of creating airgap in dielectric layers for the reduction of RC delay |
US8436473B2 (en) * | 2009-05-06 | 2013-05-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuits including air gaps around interconnect structures, and fabrication methods thereof |
US8587121B2 (en) * | 2010-03-24 | 2013-11-19 | International Business Machines Corporation | Backside dummy plugs for 3D integration |
CN102891100B (zh) * | 2011-07-22 | 2015-04-29 | 中芯国际集成电路制造(上海)有限公司 | 浅槽隔离结构及其形成方法 |
CN102376684B (zh) | 2011-11-25 | 2016-04-06 | 上海集成电路研发中心有限公司 | 铜互连结构及其制作方法 |
JP5696679B2 (ja) * | 2012-03-23 | 2015-04-08 | 富士通株式会社 | 半導体装置 |
CN104425230A (zh) * | 2013-09-09 | 2015-03-18 | 中芯国际集成电路制造(上海)有限公司 | 侧墙结构及其形成方法 |
CN104362172B (zh) * | 2014-10-15 | 2018-09-11 | 杰华特微电子(杭州)有限公司 | 具有终端环的半导体芯片结构及其制造方法 |
US9653348B1 (en) * | 2015-12-30 | 2017-05-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method thereof |
US10896888B2 (en) * | 2018-03-15 | 2021-01-19 | Microchip Technology Incorporated | Integrated circuit (IC) device including a force mitigation system for reducing under-pad damage caused by wire bond |
US10818541B2 (en) | 2018-12-27 | 2020-10-27 | Nanya Technology Corporation | Semiconductor structure |
US11309263B2 (en) * | 2020-05-11 | 2022-04-19 | Nanya Technology Corporation | Semiconductor device structure with air gap structure and method for preparing the same |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0393635B1 (en) * | 1989-04-21 | 1997-09-03 | Nec Corporation | Semiconductor device having multi-level wirings |
GB2247986A (en) * | 1990-09-12 | 1992-03-18 | Marconi Gec Ltd | Reducing interconnection capacitance in integrated circuits |
JP2555940B2 (ja) * | 1993-07-27 | 1996-11-20 | 日本電気株式会社 | 半導体装置及びその製造方法 |
JPH07326670A (ja) * | 1994-05-31 | 1995-12-12 | Texas Instr Inc <Ti> | 半導体集積回路装置 |
JPH08148556A (ja) * | 1994-11-16 | 1996-06-07 | Sony Corp | 半導体装置およびその製造方法 |
CN1204867A (zh) * | 1997-06-20 | 1999-01-13 | 日本电气株式会社 | 半导体器件及其制造方法 |
US6184121B1 (en) * | 1997-07-10 | 2001-02-06 | International Business Machines Corporation | Chip interconnect wiring structure with low dielectric constant insulator and methods for fabricating the same |
JP2000058549A (ja) * | 1998-08-04 | 2000-02-25 | Nec Corp | 集積回路配線の形成方法 |
JP2000269327A (ja) * | 1999-03-15 | 2000-09-29 | Toshiba Corp | 半導体装置およびその製造方法 |
US6413852B1 (en) * | 2000-08-31 | 2002-07-02 | International Business Machines Corporation | Method of forming multilevel interconnect structure containing air gaps including utilizing both sacrificial and placeholder material |
-
2003
- 2003-11-07 CN CNB2003101034859A patent/CN100372113C/zh not_active Expired - Lifetime
- 2003-11-11 TW TW092131566A patent/TWI232496B/zh not_active IP Right Cessation
- 2003-11-14 JP JP2003385281A patent/JP2004172620A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
TW200415704A (en) | 2004-08-16 |
CN100372113C (zh) | 2008-02-27 |
CN1501492A (zh) | 2004-06-02 |
JP2004172620A (ja) | 2004-06-17 |
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MK4A | Expiration of patent term of an invention patent |