TWI222639B - Semiconductor device - Google Patents
Semiconductor device Download PDFInfo
- Publication number
- TWI222639B TWI222639B TW092112838A TW92112838A TWI222639B TW I222639 B TWI222639 B TW I222639B TW 092112838 A TW092112838 A TW 092112838A TW 92112838 A TW92112838 A TW 92112838A TW I222639 B TWI222639 B TW I222639B
- Authority
- TW
- Taiwan
- Prior art keywords
- voltage
- signal
- circuit
- power supply
- level
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 32
- 230000002093 peripheral effect Effects 0.000 claims abstract description 201
- 239000013589 supplement Substances 0.000 claims description 98
- 230000004913 activation Effects 0.000 claims description 64
- 238000006243 chemical reaction Methods 0.000 claims description 58
- 239000003990 capacitor Substances 0.000 claims description 42
- 230000004044 response Effects 0.000 claims description 32
- 230000005540 biological transmission Effects 0.000 claims description 5
- 230000006870 function Effects 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 71
- 239000002184 metal Substances 0.000 description 49
- 229910052751 metal Inorganic materials 0.000 description 49
- 238000001514 detection method Methods 0.000 description 42
- 230000009977 dual effect Effects 0.000 description 42
- 238000005086 pumping Methods 0.000 description 36
- 208000035795 Hypocalcemic vitamin D-dependent rickets Diseases 0.000 description 22
- 208000033584 type 1 vitamin D-dependent rickets Diseases 0.000 description 22
- 230000002829 reductive effect Effects 0.000 description 17
- 239000000758 substrate Substances 0.000 description 16
- 230000008878 coupling Effects 0.000 description 12
- 238000010168 coupling process Methods 0.000 description 12
- 238000005859 coupling reaction Methods 0.000 description 12
- 230000007423 decrease Effects 0.000 description 12
- 239000012535 impurity Substances 0.000 description 11
- 230000004048 modification Effects 0.000 description 11
- 238000012986 modification Methods 0.000 description 11
- 230000009471 action Effects 0.000 description 9
- 102100039496 Choline transporter-like protein 4 Human genes 0.000 description 6
- 101000889282 Homo sapiens Choline transporter-like protein 4 Proteins 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
- 239000000047 product Substances 0.000 description 6
- 102100039497 Choline transporter-like protein 3 Human genes 0.000 description 5
- 101000889279 Homo sapiens Choline transporter-like protein 3 Proteins 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- 230000000295 complement effect Effects 0.000 description 5
- 230000000670 limiting effect Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 102100031699 Choline transporter-like protein 1 Human genes 0.000 description 4
- 102100035954 Choline transporter-like protein 2 Human genes 0.000 description 4
- 101000940912 Homo sapiens Choline transporter-like protein 1 Proteins 0.000 description 4
- 101000948115 Homo sapiens Choline transporter-like protein 2 Proteins 0.000 description 4
- 238000007667 floating Methods 0.000 description 4
- 230000010355 oscillation Effects 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 102100039505 Choline transporter-like protein 5 Human genes 0.000 description 3
- 101000889267 Homo sapiens Choline transporter-like protein 5 Proteins 0.000 description 3
- 101001094079 Homo sapiens Sodium- and chloride-dependent GABA transporter 2 Proteins 0.000 description 3
- 101100202333 Mus musculus Slc6a12 gene Proteins 0.000 description 3
- 101100202340 Rattus norvegicus Slc6a13 gene Proteins 0.000 description 3
- 101150064359 SLC6A1 gene Proteins 0.000 description 3
- 102100035242 Sodium- and chloride-dependent GABA transporter 2 Human genes 0.000 description 3
- 230000003321 amplification Effects 0.000 description 3
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 101100326920 Caenorhabditis elegans ctl-1 gene Proteins 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000002779 inactivation Effects 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 230000007257 malfunction Effects 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- VQUVCIYMYJAJIZ-UHFFFAOYSA-N 2-[n-ethyl-4-[2-(1-methylpyridin-1-ium-4-yl)ethenyl]anilino]ethanol;tetraphenylboranuide Chemical compound C1=CC(N(CCO)CC)=CC=C1\C=C\C1=CC=[N+](C)C=C1.C1=CC=CC=C1[B-](C=1C=CC=CC=1)(C=1C=CC=CC=1)C1=CC=CC=C1 VQUVCIYMYJAJIZ-UHFFFAOYSA-N 0.000 description 1
- PQGCEDQWHSBAJP-TXICZTDVSA-N 5-O-phosphono-alpha-D-ribofuranosyl diphosphate Chemical compound O[C@H]1[C@@H](O)[C@@H](O[P@](O)(=O)OP(O)(O)=O)O[C@@H]1COP(O)(O)=O PQGCEDQWHSBAJP-TXICZTDVSA-N 0.000 description 1
- 101100494773 Caenorhabditis elegans ctl-2 gene Proteins 0.000 description 1
- 101100026165 Drosophila melanogaster ND-75 gene Proteins 0.000 description 1
- 101000639970 Homo sapiens Sodium- and chloride-dependent GABA transporter 1 Proteins 0.000 description 1
- 101800000628 PDH precursor-related peptide Proteins 0.000 description 1
- 102100033927 Sodium- and chloride-dependent GABA transporter 1 Human genes 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000009182 swimming Effects 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Dram (AREA)
- Logic Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002144869A JP4386619B2 (ja) | 2002-05-20 | 2002-05-20 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200401292A TW200401292A (en) | 2004-01-16 |
| TWI222639B true TWI222639B (en) | 2004-10-21 |
Family
ID=29417087
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW092112838A TWI222639B (en) | 2002-05-20 | 2003-05-12 | Semiconductor device |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6954103B2 (https=) |
| JP (1) | JP4386619B2 (https=) |
| KR (1) | KR100545422B1 (https=) |
| CN (3) | CN100550184C (https=) |
| DE (1) | DE10322733A1 (https=) |
| TW (1) | TWI222639B (https=) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI425520B (zh) * | 2008-05-12 | 2014-02-01 | Taiwan Semiconductor Mfg | 用於記憶體元件之電源啟動／切斷序列機制 |
Families Citing this family (42)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100626367B1 (ko) * | 2003-10-02 | 2006-09-20 | 삼성전자주식회사 | 내부전압 발생장치 |
| JP4374254B2 (ja) * | 2004-01-27 | 2009-12-02 | Ｏｋｉセミコンダクタ株式会社 | バイアス電圧発生回路 |
| CN101027619A (zh) * | 2004-05-14 | 2007-08-29 | 泽默斯技术有限公司 | 内部电压发生器方案和电源管理方法 |
| US7782090B2 (en) * | 2004-08-02 | 2010-08-24 | Panasonic Corporation | Semiconductor device |
| KR100585168B1 (ko) * | 2004-12-22 | 2006-06-02 | 삼성전자주식회사 | 다중경로 입력버퍼회로 |
| KR100754328B1 (ko) * | 2005-02-15 | 2007-08-31 | 삼성전자주식회사 | 내부전원전압 발생회로 및 이를 포함하는 반도체 메모리 장치 |
| JP2006279203A (ja) | 2005-03-28 | 2006-10-12 | Fujitsu Ltd | レベル変換回路 |
| JP4820571B2 (ja) * | 2005-04-15 | 2011-11-24 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| KR100753048B1 (ko) | 2005-09-05 | 2007-08-30 | 주식회사 하이닉스반도체 | 반도체 메모리 장치의 주변영역 전압 발생 장치 |
| JP4391976B2 (ja) * | 2005-09-16 | 2009-12-24 | 富士通株式会社 | クロック分配回路 |
| US8199600B2 (en) * | 2005-09-28 | 2012-06-12 | Hynix Semiconductor Inc. | Voltage generator for peripheral circuit |
| JP2007095075A (ja) * | 2005-09-29 | 2007-04-12 | Hynix Semiconductor Inc | 内部電圧生成装置 |
| KR100818706B1 (ko) * | 2006-01-09 | 2008-04-02 | 주식회사 하이닉스반도체 | 반도체 소자의 내부 전압 발생 장치 |
| KR100771870B1 (ko) | 2006-05-19 | 2007-11-01 | 삼성전자주식회사 | 반도체 메모리장치의 승압전압 검출회로 및 이를 제어하는방법 |
| US7595687B2 (en) * | 2006-07-31 | 2009-09-29 | Wisconsin Alumni Research Foundation | Apparatus and method for reducing EMI generated by a power conversion device |
| US7768756B2 (en) | 2007-04-27 | 2010-08-03 | Hewlett-Packard Development Company, L.P. | Leakage current protection circuit |
| KR100892640B1 (ko) * | 2007-05-10 | 2009-04-09 | 주식회사 하이닉스반도체 | 반도체 집적 회로 |
| US7705659B1 (en) * | 2007-07-02 | 2010-04-27 | Altera Corporation | Power regulator circuitry with power-on-reset control |
| US7868605B1 (en) | 2007-07-02 | 2011-01-11 | Altera Corporation | Mixed mode power regulator circuitry for memory elements |
| JP2009081384A (ja) * | 2007-09-27 | 2009-04-16 | Nec Electronics Corp | 半導体装置 |
| KR100925368B1 (ko) * | 2007-12-20 | 2009-11-09 | 주식회사 하이닉스반도체 | 센스앰프 전압 공급 회로 및 그의 구동 방법 |
| JP5211889B2 (ja) * | 2008-06-25 | 2013-06-12 | 富士通株式会社 | 半導体集積回路 |
| CN101639797B (zh) * | 2008-07-30 | 2011-05-04 | 鸿富锦精密工业（深圳）有限公司 | 内存侦测电路 |
| KR101559908B1 (ko) * | 2009-01-20 | 2015-10-15 | 삼성전자주식회사 | 반도체 메모리 장치의 내부전압 발생회로 |
| JP2010176742A (ja) * | 2009-01-29 | 2010-08-12 | Elpida Memory Inc | 半導体装置及びデータ処理システム |
| US8054120B2 (en) * | 2009-06-30 | 2011-11-08 | Stmicroelectronics Design & Application Gmbh | Integrated circuit operable in a standby mode |
| JP5512226B2 (ja) * | 2009-10-27 | 2014-06-04 | ルネサスエレクトロニクス株式会社 | 半導体記憶装置 |
| JP2011233631A (ja) * | 2010-04-26 | 2011-11-17 | Elpida Memory Inc | 半導体装置 |
| KR101782137B1 (ko) * | 2010-11-08 | 2017-09-27 | 삼성전자주식회사 | 파워 온 리셋 회로 |
| JP5727211B2 (ja) * | 2010-12-17 | 2015-06-03 | ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． | 半導体装置 |
| CN102157193B (zh) * | 2011-03-28 | 2013-04-17 | 钰创科技股份有限公司 | 存储器的电压调整器 |
| JP2015050722A (ja) * | 2013-09-04 | 2015-03-16 | ソニー株式会社 | 信号出力回路および信号出力方法 |
| CN104795087B (zh) * | 2014-01-22 | 2017-08-25 | 中芯国际集成电路制造(上海)有限公司 | 用于读取数据的灵敏放大器及存储器 |
| US9317051B2 (en) * | 2014-02-06 | 2016-04-19 | SK Hynix Inc. | Internal voltage generation circuits |
| JP5733771B2 (ja) * | 2014-06-17 | 2015-06-10 | ラピスセミコンダクタ株式会社 | 半導体メモリ |
| KR102280433B1 (ko) * | 2015-09-23 | 2021-07-22 | 삼성전자주식회사 | 전력 공급 회로 및 이를 포함하는 저장 장치 |
| CN106680686A (zh) * | 2016-12-29 | 2017-05-17 | 浙江大学 | 一种提高半导体器件皮秒级超快速电学特性测试精度的方法 |
| US10700683B1 (en) * | 2018-08-28 | 2020-06-30 | Qualcomm Incorporated | Dynamic power supply shifting |
| CN109946580B (zh) * | 2019-04-09 | 2020-09-04 | 浙江大学 | 一种应用于半导体器件超高速实时表征的信号同步方法 |
| JP6998981B2 (ja) * | 2020-03-03 | 2022-01-18 | ウィンボンド エレクトロニクス コーポレーション | 半導体記憶装置 |
| CN113467565B (zh) * | 2021-07-08 | 2025-05-30 | 海宁奕斯伟计算技术有限公司 | 驱动系统、驱动方法、计算机系统和可读介质 |
| CN117938145B (zh) * | 2024-03-22 | 2024-06-04 | 深圳安森德半导体有限公司 | 一种能够实现初态自动控制的电平转换电路 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6427094A (en) | 1987-07-23 | 1989-01-30 | Mitsubishi Electric Corp | Mos-type semiconductor memory |
| JPH05120884A (ja) | 1991-10-28 | 1993-05-18 | Nec Corp | 半導体集積回路 |
| JP3239581B2 (ja) | 1994-01-26 | 2001-12-17 | 富士通株式会社 | 半導体集積回路の製造方法及び半導体集積回路 |
| JP3450091B2 (ja) | 1995-04-06 | 2003-09-22 | 株式会社リコー | 昇圧回路装置及び昇圧方法 |
| JPH09274793A (ja) | 1996-04-04 | 1997-10-21 | Kawasaki Steel Corp | ダイナミックランダムアクセスメモリ |
| JPH10199241A (ja) | 1997-01-06 | 1998-07-31 | Mitsubishi Electric Corp | 半導体記憶装置 |
| JPH10228768A (ja) | 1997-02-14 | 1998-08-25 | Mitsubishi Electric Corp | 半導体記憶装置 |
| KR100267011B1 (ko) * | 1997-12-31 | 2000-10-02 | 윤종용 | 반도체 메모리 장치의 내부 전원 전압 발생 회로 |
| JP3346273B2 (ja) | 1998-04-24 | 2002-11-18 | 日本電気株式会社 | ブースト回路および半導体記憶装置 |
| JP2000021166A (ja) | 1998-06-30 | 2000-01-21 | Hitachi Ltd | 昇圧回路 |
| JP4368994B2 (ja) | 1999-05-14 | 2009-11-18 | 株式会社ルネサステクノロジ | 半導体装置 |
| JP4053718B2 (ja) * | 2000-09-07 | 2008-02-27 | 富士通株式会社 | 半導体記憶装置の内部電源供給回路及び半導体記憶装置の内部電源供給方法 |
| JP5041631B2 (ja) * | 2001-06-15 | 2012-10-03 | ルネサスエレクトロニクス株式会社 | 半導体記憶装置 |
| KR100446297B1 (ko) * | 2002-04-02 | 2004-08-30 | 삼성전자주식회사 | 외부 전압의 변화에 무관하게 안정된 출력 전압을발생하는 전압 발생회로 |
| KR100456597B1 (ko) * | 2002-07-16 | 2004-11-09 | 삼성전자주식회사 | 외부 전압 레벨에 따라 내부 전압을 선택적으로 발생하는반도체 메모리 장치 및 그 내부 전압 발생 회로 |
-
2002
- 2002-05-20 JP JP2002144869A patent/JP4386619B2/ja not_active Expired - Lifetime
-
2003
- 2003-05-02 US US10/427,968 patent/US6954103B2/en not_active Expired - Fee Related
- 2003-05-12 TW TW092112838A patent/TWI222639B/zh not_active IP Right Cessation
- 2003-05-20 KR KR1020030031801A patent/KR100545422B1/ko not_active Expired - Fee Related
- 2003-05-20 DE DE10322733A patent/DE10322733A1/de not_active Withdrawn
- 2003-05-20 CN CNB2006101425396A patent/CN100550184C/zh not_active Expired - Fee Related
- 2003-05-20 CN CNB03136750XA patent/CN100505093C/zh not_active Expired - Fee Related
- 2003-05-20 CN CNB2006101425409A patent/CN100550185C/zh not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI425520B (zh) * | 2008-05-12 | 2014-02-01 | Taiwan Semiconductor Mfg | 用於記憶體元件之電源啟動／切斷序列機制 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1937068A (zh) | 2007-03-28 |
| KR20030090535A (ko) | 2003-11-28 |
| JP4386619B2 (ja) | 2009-12-16 |
| TW200401292A (en) | 2004-01-16 |
| KR100545422B1 (ko) | 2006-01-24 |
| US6954103B2 (en) | 2005-10-11 |
| CN1461009A (zh) | 2003-12-10 |
| CN100505093C (zh) | 2009-06-24 |
| CN100550184C (zh) | 2009-10-14 |
| US20030214345A1 (en) | 2003-11-20 |
| DE10322733A1 (de) | 2004-03-04 |
| CN1937069A (zh) | 2007-03-28 |
| CN100550185C (zh) | 2009-10-14 |
| JP2003338178A (ja) | 2003-11-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |