TWI220406B - Wafer carrier and operating method of chemical mechanical polishing tool - Google Patents

Abstract

A wafer carrier for chemical mechanical polishing tool is provided. The wafer carrier comprises a polishing head, a pad conditioner and a controller. The polishing head has a bottom and a retaining ring fixed at the bottom to retain the wafer at the bottom thereof. The pad conditioner is configured at the bottom of the polishing head and around the retaining ring. The controller is connected with the top portion of the pad conditioner to control the height of the pad conditioner. Furthermore, the pad conditioner can also be configured beside the carrier.

Description

1220406

The invention belongs to the technical leader. The present invention relates to a method, and in particular, to a kind of chemical mechanical polishing machine and a device for operating the mechanical polishing process of the prior art, and a wafer carrier for operating the chemical mechanical polishing machine. method. Solution Μ If: clothing ^ ’As the component size continues to shrink, lithographic exposure # ^ ^ ^ ^: The reduction in exposure depth of the accompanying person requires more stringent requirements on the wafer level. Therefore, the current wafer: anarizatlon relies on chemical mechanical polishing (Chenncal Mechanical Polishing), 、,

Its unique anisotropic grinding properties, in addition to U,, L., L ^ j, are used for the flattening of the contours of the surface of the Japanese yen and Japanese yen, and can also be applied to the vertical and horizontal metal interconnects-(Interconnects) mosaic structure. Production, front ditch isolation production, and advanced components to make Niujiu surface display production. The clothing of cows, flattening and flattening of electromechanical systems. Conventional chemical mechanical grinding machines are usually divided into rotary platform (Rotational Piaten) grinding machines or wire σ: machines. Among them, the rotary table grinding device mostly makes the second type round ^

Yes: Two wafers are loaded, and the front side of the wafer is pressed against a rotary polishing △ (Pol 1Shlng Table) with a layer of Polishing Pad for polishing. The two-way grinding machine device also uses wafer carriers to carry wafers, and it is said that it is positive: pressed on the round grinding pad driven by two pulleys. Grinding: fixed after a period of grinding process, The above two chemical machinery

1220406 V. Description of the invention (2) —---- Residual particles (Particles) will accumulate on the polishing pad of the grinder. Some of the particles come from the abrasive particles in the slurry, while others may come from the circle. Film removed by grinding. Therefore, in order to keep the polishing pad clean, a conditioner must be used to remove the residual particles on the polishing pad, so as to increase the life and performance of the polishing pad. Taking a rotary platform grinder as an example, Figures 丨 A and 丨 B are schematic diagrams of the arrangement of wafer carrier and adjuster on the polishing pad of a conventional rotary platform grinder. Please refer to FIG. 1A. The wafer carrier 10 and the adjuster 104a are respectively disposed on the polishing pad 100, and the wafer carrier 102 and the polishing pad 100 are in a chemical mechanical polishing process of the wafer. Both of them have a rotation movement, and the rotation direction of the wafer carrier 102 and the polishing pad 100 may be the same (as indicated by reference numerals 106 and 108) or different. In addition, the movement of the adjuster 10 乜 during the grinding process is driven by the robotic arm 110 to make a small left-right swing on the grinding pad 1Q0 'as shown by reference numeral 11 2 a to facilitate the removal of the grinding pad 1 0 0 Particles on the surface. However, 'because the space on the polishing pad 100 is limited, you must be very careful when configuring the positions of the wafer carrier 10 02 and the robot arm 1 1 0 and the position of the adjuster 丨 04a, because if there is a slight error, it is likely to Will cause the adjuster 104a to rub against the wafer carrier in the polishing process, and cause damage to the wafer (not shown) in the wafer carrier 102. In order to solve the above problems, the conventional adjuster has another configuration method. Please refer to FIG. 1B. The wafer carrier 102 and the adjuster 104b are respectively disposed on the polishing pad 100. During the polishing process, the adjuster 104b is the same as the polishing pad 100 and the wafer carrier 102. Has a rotational movement, and three of them

1220406 V. Description of the invention (3) -------- The directions of rotation may be the same (as indicated by reference numerals 106, 108, and 12b) and may be different. Said. However, although configuring the adjuster as shown in FIG. 丨 B can reduce the probability of collision with the crystal carrier, the position of the adjuster 10p in FIG. 1B is too close to the position of the wafer carrier 102. It is also possible that there will be a collision with the Japanese yen vehicle 102 during operation = ^ 1. 1. The eighteenth figure and the eighth w are = simple expressions showing the matching of the wafer carrier and the adjuster, but in general, there are still many modules on the polishing pad, such as research liquid supply devices, etc. Etc., so the space limit of the adjuster that can be placed on the polishing pad, whether it is the arrangement method of Fig. 1 A or Fig. 1 B, the adjuster must be arranged in a predetermined position within a very small allowable error range to avoid = The calibrator collides with the wafer carrier during the operation, which damages the crystal. In the CMP process, since both the adjuster and the wafer must be kept in a wet state, it will usually be during the waiting for polishing. Immerse the regulator and wafer together with the wafer carrier into the liquid to keep it moist. However, since the adjuster and the wafer carrier on the conventional CMP machine are separately set, it is necessary to set the immersion adjuster and the wafer immersion device separately so that the two cannot be immersed in the same equipment, not only Waste of cost also makes the overall process equipment more complicated. ^ Signed in the invention, presented: The purpose of H is to provide a wafer carrier for a chemical mechanical polishing machine and an operator of the chemical mechanical polishing machine ", which can make it difficult for wafers to be adjusted by the adjuster during the chemical mechanical polishing process. Damaged due to improper configuration

1220406 V. Description of the invention (4) Damage The purpose of the present invention is to provide a wafer carrier for a chemical mechanical polishing machine, which can simplify the equipment of the chemical mechanical polishing process and reduce & cost. The invention provides a wafer carrier of a chemical mechanical polishing machine, which includes a polishing head, an adjuster, and a controller. Among them, the polishing head has a bottom and a pressing ring ′ fixed on the bottom to hold the wafer on the bottom of the polishing head. unit. And the adjuster is installed at the bottom of the grinding head and located around the pressing ring. The controller is connected to the top of the adjuster to control the height. d Zhengyi In addition, in another preferred embodiment of the present invention, the adjuster can also be installed on the side of the grinding head, and the top of the adjuster is also equipped with a stopper connected to it to control the adjuster. the height of. The present invention also proposes a method for operating a chemical mechanical polishing table. The polishing head is first covered on the grinding wheel. • The bottom of the staff of the research institute is designed with an -adjuster, and the adjustment position is controlled; the degree position can be controlled. of. The wafer is then rotated to grind the wafer. In the skin due to the bite, you need to name it as you want, and consider the ancient itch ^ Here, you can follow the actual process = = control: you can simultaneously polish during the wafer polishing process The adjustment of the pad. In another embodiment of the invention, if the side of the adjuster system is adjusted, the adjuster can control the height of the wafer to perform the polishing pad at the same time as the wafer. In addition to the adjustment, it can also independently rotate the movement 'in other words' it can be adjusted according to the actual process needs. 10 1 ^ 〇97twf .ptd 1220406

The rotation direction of the adjuster makes it the same as that of the grinding head. The speeds are the same or different. Because the chemical machinery of the present invention has an adjustment of ‘, the polishing pad is saved on the polishing pad to save space on the polishing pad, so that the adjuster is not easily rounded due to the configuration. In addition, in order to make the wafer and the adjustment, the wafer and the adjustment can be used to consumable the consumables of the machine at the same time, so as to save the maintenance. To make the above and the present invention easy to understand, a better detailed description is given below. Implementation The wafer carrier design of the polishing machine does not need to be equipped with an additional adjuster, but the equipment can be simpler. In addition, the small error that can be set and the damage to the crystal during operation keeps the wet state. The hair immersed in the same equipment, so it can protect the cost and labor required. Other purposes, features, and advantages can make the embodiments clearer.

FIG. 2A is a schematic diagram showing a wafer carrier of a chemical mechanical polishing (CMp) machine on a polishing pad according to a preferred embodiment of the present invention, and FIG. 3A is a crystal of the first figure Schematic diagram of a partial cross section of a circular carrier.

〇 At the same time, referring to Figures 2A and 3A, the crystal round carrier of the chemical mechanical polishing machine includes a polishing head 202a, an adjuster 204a, and a controller 210a. Among them, the grinding head 202a has a bottom 212, and a pressing ring 2 06 'is fixed on the bottom 212 to hold the wafer 208 on the bottom of the grinding head 202a. The adjuster 2 04a is arranged at the bottom 212 of the grinding head 202a, and

1220406 V. Description of the invention (6) Located on the periphery of the crimping ring 206. It includes an adjustment part 214 and a fixing part 216. Among them, the withering part 2 1 4 is composed of a plurality of particles of a hard substance, for example, a plurality of diamond particles. The material of the fixing portion 216 is, for example, an alloy material. And the particles of the hard substance constituting the adjustment portion 214 are partially trapped in the fixing portion 21 16 to adjust the polishing pad 2 0 0 ′ of the CMP machine to maintain better performance. The anchor 2 1 〇a is arranged inside the grinding head 2 〇 2 a and is connected to the top of the adjuster 20 4a j to control the height of the adjuster 20 ″. The controller 2 1 〇 a For example, it is a pneumatic controller or a hydraulic controller. Moreover, in a preferred embodiment of the present invention, the controller 2 10 a may use an existing pressure controller (not shown) in the grinding head 220 2a as an appropriate one. The mechanism can be set well. The operation method of the above-mentioned chemical mechanical polishing machine will be described in detail below. Please continue to refer to FIG. 3A. First, a polishing liquid supply device (not shown) is used to provide the polishing liquid to the polishing pad. 200, and the polishing head is covered on the polishing pad 2000, and the bottom 212 of the polishing head 2002a has a wafer 208 ', and the bottom 212 of the polishing head 2002a is designed with an adjuster 2 Then, the polishing head 202a and the polishing pad 200 are rotated to cause friction between the polishing pad 200 and the particles in the polishing liquid and the surface of the wafer 208, and the distance between the surface of the wafer 208 and the polishing liquid. Chemical etching, so that the surface of the wafer 208 = frank. Among them, the polishing head 2 〇2a and the direction of rotation of the polishing pad 200. ^ As shown by the numerals 2 2 0 and 2 2 2, or opposite to the directions shown by the 2 2 0 and 222. In addition, the polishing head 202 a The rotation direction with the polishing pad mo may be the same or different.

12097twf.ptd Page 12 ^ 20406

In addition, in the process of grinding the wafer 208, the controller Oa: for example, pneumatic or hydraulic, can be used to synchronize (in-situ) or non-adjust the height of the adjuster 20 ". Synchronous (extra_situ) polishing pad adjustment. It is clear that the synchronous polishing pad adjustment is the process of polishing wafer 208: the controller 210a applies a larger pressure to the regulator 204a to make the regulator The adjustment part 214 of 204a is in contact with the surface of the polishing pad 200. Since the polishing head 202a drives the adjuster 204a to rotate, the hard material particles constituting the adjustment part 21 14 can be brought into contact with the polishing pad 200. The surface causes friction and further removes the particles remaining on the surface of the polishing pad 2000 during the polishing of the wafer 2008, so that the polishing pad 2000 maintains a better performance. Conversely, the asynchronous polishing pad adjustment That is, in the process of polishing the wafer 208, the pressure applied by the controller 21a to the adjuster 20 "is reduced, so that the adjustment portion 214 of the adjustment f 204a does not contact the surface of the polishing pad 200. That is to say, in the process of polishing the wafer 2008, the wafer 2008 is simply polished, and the polishing pad 2000 is adjusted after the wafer 2008 is polished. In addition, the wafer carrier of the chemical mechanical polishing machine of the present invention may also be provided with an adjuster on the side of the polishing head, so that the adjuster has a movement independent of the polishing head. The detailed description is as follows. FIG. 2B is a schematic diagram showing a wafer carrier of a chemical polishing machine on a polishing pad according to another preferred embodiment of the present invention, and FIG. 3β is a partial cross-sectional diagram of the wafer carrier in FIG. 2B. · Please refer to Figure 2B and Figure 3B at the same time. The round carrier of the chemical mechanical polishing machine includes a grinding head 202b, an adjuster 20 4b, and a controller 21b. ^

12097twf.ptd Page 13 1220406 5. In the description of the invention (8), the polishing head 202b has a bottom 212, and a crimping ring 2 0 6 is fixed at the bottom 212 to hold the wafer 2 0 8 to the polishing. The bottom of the head 202b. The adjuster 2 0 4 b is installed on the side of the polishing head 2 2 b and includes an adjusting portion 214 and a fixing portion 216. The materials and functions of the adjusting portion 214 and the fixing portion are as described in the above embodiment, and are not repeated here. The controller 210b is disposed outside the grinding head 20 2b and is connected to the top of the adjuster 204b to control the height of the adjuster 204b. The 'controller 2 1 Ob is, for example, a pneumatic controller or a hydraulic controller. Hereinafter, the operation method of the above-mentioned chemical mechanical polishing machine will be described in detail.凊 Continuing to refer to FIG. 3B, first use a polishing liquid supply device (not shown) provided on the polishing pad 200, and press the polishing head 2021) on the polishing pad 2000, and the polishing head 2〇 The bottom 212 of 2b has a wafer 208 fixedly on it, and the side of the polishing head 202b is designed with an adjuster 204b. Next, the polishing head 200 2b and the polishing pad 200 are rotated to cause friction between the particles in the polishing pad and the polishing liquid and the surface of the wafer 208, and the chemistry between the surface of the wafer 208 and the polishing liquid. The etching effect makes the surface of the wafer 208 flat. Wherein, the rotation direction of the holes of the polishing head 20 and the polishing pad 20 0 is, for example, shown as j 2 2 0 and 2 2 2, or opposite directions indicated by 2 2 0 and 2 2 2. The rotation direction of the polishing head 200b and the polishing pad 200 may be the same or different. In particular, 'Because the adjuster 2 0 4 b and the polishing head 2 2 2 b are independently provided', the adjuster 204 b has a rotating motion during the process of polishing the wafer 2 08, and the direction of rotation may be It is the same as the grinding head 2202b, and its rotation speed can be the same as or not the same as that of the grinding head 2202b.

1220406 V. Description of Invention (9) Same. In addition, in the process of polishing wafers 208 and 210b with, for example, air pressure or pressure, it can be controlled by the controller to perform the same operation = I type, and the height of the adjuster 204b is added with Π v or not. As an example, the synchronous grinding pad adjustment is used to control the test and production. Synchronized research adjuster 204b is used to apply a large amount of weight to the right. During the process of grinding wafer 208, pair 214 is in contact with the polishing pad 2000. The adjustment section 200 of the adjuster 20 is provided with a M The table shows that the adjuster 20413 and the polishing pad Φ prevent the friction of the friction and further remove the process efficiency of polishing the wafer 20δ. ; ... 20 0 particles on the surface, so that the polishing pad 200 maintains a better '* ^, that is, the pressure that the controller 21 0b applies to the regulator 204b is reduced so that the adjustment portion 214 of the regulator 204b does not contact the polishing The surface of the pad 200. In other words, in the process of grinding wafer 208, only wafer 208 is simply polished, and adjustment is not performed until wafer 208 is polished. -re 星 ζυϋ Because the present invention is provided with an adjuster inside or around the wafer carrier, a large number of empty doors on the polishing pad can be saved during the CMP process of the wafer to facilitate the configuration of modules required by other processes, and Improve space utilization. In addition, it can also avoid the problem that the conventional wafer carrier often collides with the cycler during the CMP process of the wafer and damages the wafer. In particular, in the embodiment of the present invention, an adjuster is designed at the bottom of the grinding head, and is located at the periphery of the pressing ring. Therefore, the adjuster is related to

12097twf.ptd Page 15 1220406 V. Description of the invention (ίο) The grinding head operates synchronously, so no adjustment of the shape will occur, and of course, no additional controller is required to press ^ = = circular collision to avoid occurrence with the wafer Collision, so you can reduce the cost of the trajectory of the movement of Zheng Zhou. & the complexity of the clothing process, and saving. In addition, because the wafer and the adjuster must usually be immersed, the wafer will be immersed together with the wafer carrier; Also /,-equipment, without having to prepare different ones separately; equipment on the same journey is more concise and not complicated. In addition: said two pounds :: ^ The process is completed; reducing the consumption of cleaning liquid, and reducing the production / master w, in another embodiment of the present invention, the wafer |: m redundant one The adjuster, 1 the adjuster and the wafer carrier are independent, so the adjuster can have independent movement. Moreover, although the entire system is provided independently from the wafer carrier, since it is disposed on the side of the polishing head and is operated by a rotary motion, the adjuster does not collide with the wafer. Therefore, in this embodiment, no additional controller is needed to control the movement track of the regulator to avoid collision with the wafer, so the complexity of the process can be reduced and the cost can be saved. -Although the present invention has been disclosed in the preferred embodiment as above, it is not intended to limit the present invention. 'Any person skilled in the art can make some changes and retouches without departing from the spirit and scope of the present invention. The scope of protection of the invention shall be determined by the scope of the attached patent application. 12097twf.ptd Page 16 1220406 Brief Description of Drawings Figures 1A and 1B are schematic diagrams showing the configuration of wafer carriers and adjusters on the polishing pad of a conventional rotary table grinder. FIG. 2A is a schematic view showing a wafer carrier of a chemical mechanical grinding machine table disposed on a grinding grate according to a preferred embodiment of the present invention. FIG. 2B is a partial view of a wafer carrier of a polishing machine on a polishing pad with a wafer carrier disposed on a polishing pad according to another preferred embodiment of the present invention. FIG. 2A Figure 3B is a partial two-side reflection of the wafer carrier in Figure 2B. [Schematic description] The four sides are not intended. 100, 200: Polishing pads 102, 202a, 202b: Polishing heads 10 4a, 104b, 2 04a, 2 04b: Adjusters 1 06, 2 2 0 · Rotation direction of the polishing heads " 108, 222: Polishing pads Rotation direction 1 1 0: Robotic arm 1 1 2 a, 1 1 2 b ·· Rotor of the adjuster 2 0 6: Lamination ring " 2 0 8 · Wafer 2 1 0 a, 2 1 0 b: Control 5 | 2 1 2: Bottom of grinding head 2 1 4: Adjusting part 2 1 6: Fixing part

Claims (1)

1220406 VI. Scope of patent application 1 · A wafer carrier of a chemical mechanical polishing machine, including: ^ a polishing head with a bottom and a pressing ring fixed on the bottom to hold a wafer in the polishing The bottom of the head; a plurality of adjusters' is installed on the bottom of the grinding head and is located on the periphery of the pressure; and | 敫 w 2 is connected to the top of the adjuster to control the adjustment to Nandu. Said. 2. The wafer carrier of a chemical mechanical polishing machine as described in item 1 of the scope of patent application, wherein the controller is a pressure controller. σ said. 3. The wafer carrier of a chemical mechanical polishing machine as described in item 2 of the scope of patent application, wherein the pressure controller is a gas pressure controller. Said. 4. The wafer carrier of the chemical mechanical polishing machine according to item 2 of the scope of patent application, wherein the pressure controller is a hydraulic controller. Mouth said. 5. The wafer carrier of the chemical mechanical polishing machine according to item 1 of the scope of the patent application, wherein the controller is installed inside the polishing head. Port 6 · A wafer carrier of a chemical mechanical polishing machine, including: a polishing head 'having a bottom and a pressing% fixed on the bottom' for holding a wafer on the bottom of the polishing head; a An adjuster is installed on the side of the grinding head; and a finisher is connected to the top of the adjuster to control the adjustment of the chemical mechanical grinding machine as described in item 6 of the scope of patent application Taizhi said that the round vehicle 'wherein the controller is a pressure controller. 8. The surface of the chemical mechanical polishing machine as described in item 7 of the scope of patent application 1220406 The scope of patent application Wafer Carrier 'wherein the pressure controller is a pneumatic controller. Taiwan. 1 2 3 4 5 6 7 8 9 10 · The chemical mechanical polishing machine wafer carrier according to item 7 of the scope of patent application, wherein the pressure controller is a hydraulic controller. I 0 · The wafer carrier of the chemical mechanical polishing machine as described in item 6 of the patent application scope, wherein the controller is installed outside the polishing head. II. A method for operating a chemical mechanical polishing machine, including: pressing a polishing head on a polishing pad, wherein a wafer is fixedly held at the bottom of the polishing head, and an adjuster is designed at the bottom of the polishing head, and The height position of the regulator can be controlled; and the polishing pad and the polishing head are rotated to grind the wafer, wherein the polishing pad can be adjusted at the same time by controlling the height of the regulator. σ 12 · The method 2 of the chemical mechanical polishing machine described in item 11 of the scope of patent application, wherein if the height of the adjuster is reduced, the adjuster can simultaneously adjust the polishing pad while polishing the wafer. . 1 3 · The operation method of the chemical mechanical polishing machine 2 as described in the item 1 of the patent scope of the application, wherein if the height of the adjuster is increased, only 3 wafers are polished. 4 14 · A method of operating a chemical mechanical polishing machine, including: 5 Laminating a polishing head on a polishing pad, wherein a bottom 6 of the polishing head has a wafer fixedly attached, and the side of the polishing head is An adjuster is designed, and the height position and rotation direction of the adjuster can be controlled; and the polishing pad and the polishing head are rotated on 8 to grind the wafer, among which 9 is controlled by the height of the adjuster, The polishing pad can be adjusted at the same time. q 10 15 · The chemical mechanical grinding machine described in item 14 of the scope of patent application 1220406 6. The method of operation of the scope of patent application, wherein the rotation direction of the adjuster is the same as the rotation direction of the grinding head. 16. The method of operating a chemical mechanical polishing machine as described in item 14 of the scope of patent application, wherein the rotation direction of the adjuster is opposite to the rotation direction of the polishing head. 1 7. The method of operating a chemical mechanical polishing machine as described in item 14 of the scope of patent application, wherein if the height of the adjuster is reduced, the adjuster can simultaneously adjust the polishing pad while grinding the wafer. . 1 8. The method of operating a chemical mechanical polishing machine as described in item 14 of the scope of patent application, wherein if the height of the adjuster is increased, the wafer is simply polished. 12097twf.ptd Page 20