TWI220289B - Wafer clamping apparatus for wet etching - Google Patents
Wafer clamping apparatus for wet etching Download PDFInfo
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- TWI220289B TWI220289B TW92107423A TW92107423A TWI220289B TW I220289 B TWI220289 B TW I220289B TW 92107423 A TW92107423 A TW 92107423A TW 92107423 A TW92107423 A TW 92107423A TW I220289 B TWI220289 B TW I220289B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
1220289 五、發明說明(1) 1 ·發明所屬之技術領域 護晶 具。 本發明係關於一種晶圓蝕刻失持 圓正面之元件而於背面進行蝕刻 治具,尤指一種可保 之晶圓餘刻夹持治 2.先前技術 由於半導體技術應用在檢測器(s e n s 〇 r )或其他微 機電(micro-machining)、微機電系統(micro —eiectric一 mechanical system)之製造上有許多優點,例如體積小、 可大量製造、價廉、適合在小空間應用、尤其在醫學上更 能節省試驗樣品,如血液之用量等等,此種微系統在製造 時有許多步驟需要蝕刻去除矽基板之大部分,且希望獲得 快速而均勻之餘刻,濕姓刻正符所需。 為保護晶圓之一面而蝕刻另一面,以往多用蠟或光阻 膜保護其中一面,再將晶圓浸入蝕刻液進行蝕刻。但用蠟 時去除不易’易污染晶圓,且保護亦不確實;用光阻膜保 δ蒦又不能阻擋長時間之蝕刻液侵蝕。因此有一種需求能用 種治具’使晶圓被夾持在一治具上,再浸入钱刻液中進 行#刻,.可由治具保護晶圓之一面而蝕刻另一面。 目前’用於夾持晶圓以進行蝕刻的工具有許多,例如 1220289 五、發明說明(2) 將晶圓置放於一 體僅暴露出欲蝕 晶片固定住’並 元件。 然而,傳統 予以密封,使用 餘刻溶液’且夾 產品良率。而使 果更差。此外, 0形環之間,往名 晶圓可利用面積 另一方面, 由晶圓上的瑕疵 偏壓於晶圓,但 另外,傳統 需以電線連接至 纏繞而妨礙操作 先前技術企 不能阻擋蝕刻液 晶圓面積。因此1220289 V. Description of the invention (1) 1 · Technical field to which the invention belongs Crystal protector. The present invention relates to a wafer etch misalignment round front surface component and an etching jig on the back surface, especially a kind of wafer holding and holding wafer. 2. The prior art is because semiconductor technology is applied to the detector (sens 〇r ) Or other micro-machining, micro-electromechanical system (micro-mechanical system) manufacturing has many advantages, such as small size, can be manufactured in large quantities, inexpensive, suitable for small space applications, especially in medicine It can save test samples, such as the amount of blood, etc. There are many steps in the manufacture of such microsystems, which require etching to remove most of the silicon substrate, and hope to obtain a fast and uniform time etch, wet engraving is exactly required. In order to protect one side of the wafer and etch the other side, wax or photoresist film is often used to protect one side, and then the wafer is immersed in an etching solution for etching. However, it is not easy to remove when wax is used, it is easy to contaminate the wafer, and the protection is not sure; using a photoresist film to ensure that δ 蒦 cannot block the etching solution corrosion for a long time. Therefore, there is a demand that the wafer can be clamped on a jig with a kind of jig, and then immersed in the engraving solution for #etching. One side of the wafer can be protected by the jig and the other side can be etched. At present, there are many 'tools for holding wafers for etching, such as 1220289 V. Description of the invention (2) Placing the wafer in a body only exposes the wafer to be etched and fixed' and components. However, conventionally, it is sealed, using the after-treatment solution ', and the product yield is clamped. The result is even worse. In addition, between the 0-rings, the available area of the famous wafers, on the other hand, is biased to the wafers by defects on the wafers, but in addition, the traditional need to connect the wires to the windings, which hinders the operation of the prior technology, which cannot block the etching. LCD round area. therefore
周緣設有0-ring或具有真空抽取裝置之盒 刻之表面,期望藉由〇 —ring或真空吸引將 同時防止蝕刻溶液侵入而破壞晶圓正面的 上使用0-rin g之夾持工具僅以單一 q形環 一段時間後仍會由螺紋溝或晶圓周緣滲漏 持應力較高容易造成晶圓破裂,因此降低 用真空吸引方式經實際操作發現其密封效 傳統工具在夾持晶圓時,因探針置於内外 t需佔去至少7mm至10mm的邊緣寬度,使得 大為減少。 使用傳統夾持工具必須等蝕刻完成後,藉 才發現晶圓未夾持妥當而未能在蝕刻時力1 餘刻完成後發現時往往為時已晚。 夾持工具加偏壓之導線引至握柄上端後, 電源,在機械手臂移動夾持工具時電線易 ’不適於自動化操作。 f利用治具夾持晶圓進行濕蝕刻,但仍然 而使兀件受損,減低良率,且浪費 而,一種晶圓蝕刻夾持治具,可確實防止The periphery is provided with a 0-ring or a box-engraved surface with a vacuum extraction device. It is expected that 0-ring or vacuum suction will simultaneously prevent the etching solution from invading and damage the front side of the wafer. After a period of time, a single q-shaped ring will still leak from the thread groove or the peripheral edge of the wafer. The higher holding stress is likely to cause the wafer to crack. Therefore, the vacuum suction method is used to find the sealing effect of the traditional tool when holding the wafer. Because the probe is placed inside and outside t, it needs to occupy an edge width of at least 7mm to 10mm, which greatly reduces. With traditional clamping tools, it is necessary to wait for the etching to be completed before discovering that the wafer is not properly clamped and fails to be etched for 1 minute after the etching is completed. It is often too late to find out. After the biasing wire of the clamping tool is led to the upper end of the grip, the power supply is easy to use when the mechanical arm moves the clamping tool. It is not suitable for automated operation. f Wet etching using a jig to hold the wafer, but still damage the components, reduce the yield, and waste. A wafer etching jig can actually prevent
第8頁 1220289 五、發明說明(3) - 濕蝕刻時蝕刻液滲漏,並減少晶圓表面積之浪費,且及時 偵知晶圓是否固定妥當,並使加偏壓於晶圓時確實接’ 且無電線外露而適於自動化操作。 3.發明内容 本發月之主要目的在於提供一種晶圓蝕刻 可用於固定一曰圓丨”從从a门 卜 入得冶具, 又 日日囫以便於晶圓之背面進行蝕刻,舍曰Page 8 1220289 V. Description of the invention (3)-Etching solution leaks during wet etching, reduces waste of wafer surface area, and timely detects whether the wafer is fixed properly, and makes sure that the wafer is actually connected when biased to the wafer. And no wires are exposed, suitable for automated operation. 3. Summary of the Invention The main purpose of the present month is to provide a wafer etching that can be used to fix a circle. It can be obtained from a gate, and it can be used to etch the back of the wafer.
之正面包接古;从„士 此田日日W U访有兀件時,可保護元件。 本發明 可增加晶圓 之另一目的在於提供一種晶圓蝕刻失持治具 可利用面積,且不易夾損。The bread is ancient; the component can be protected when there is a component from the WU Tiantian WU. Another object of the present invention is to increase the available area of the wafer etching misalignment fixture, which is not easy. Pinch.
本發明 可及時偵知 接觸。 之再一目的在於提供一種晶圓蝕刻夾持治具, 晶圓是否固定妥當,並使加偏壓於晶圓時^實 考表日月 在治具浸人s 於提供一種晶圓姓刻夾持治具The invention can detect contact in time. Another purpose is to provide a wafer etching clamping fixture, whether the wafer is properly fixed, and the bias voltage is applied to the wafer. The actual test table is immersed in the fixture, and a wafer name clip is provided. Holding fixture
圓,勿需另ί 時’偏壓亦自動接通而加偏壓於Circle, do n’t need another ’when the bias is automatically turned on and the bias is
习而另接電線’有利於自動化操作。 U 括一底座 成士述目,,本發明之晶圓蝕刻夾持治具主要包 .,,一 一上蓋、一探針、一金屬片槽、1 m ^ 數個固接單亓^ 價—金屬片及複 。底座具有一倒Ω形截面之外環型槽、 倒The use of a separate wire is convenient for automated operation. U includes a description of the base, the wafer etching holding fixture of the present invention mainly includes a cover, a probe, a metal sheet slot, 1 m ^ several fixed orders 亓 — — Sheet metal and complex. The base has an annular groove with an inverted Ω-shaped cross section,
----- 第9頁 1220289 五、發明說明(4) Ω形截面之内 一内密封環嵌 接觸;上蓋係 截面之上環型 於該上環型槽 圓之中心點接 之一;金屬片 置一金屬片形 該底座之一探 導線連接至一 該金屬片之間 座及該上蓋, 正面及背面之 於爽持治具浸 至接觸墊;於 通0 上述之底 件。 環型槽、 設於該内 一對應該 槽、上密 中並可與 觸,以加 槽位於與 成監測電 針及一金 監控器, 形成電容 使該内密 周緣緊密 入餘刻槽 握柄置於 封環嵌 中並可 緣之環 底座之 背面之 晶圓, 央表面 一電極 該探針 針可與 個固接 該上密 一握柄 液面, 上時自 一外密 環型槽 底座周 封環與 該晶圓 偏壓於 晶圓中 容之另 屬片, 使該探 。複數 封環及 接觸; 時露出 餘刻槽 設於該 與該晶 狀物, 内密封 周緣接 亦作監 相對之 :監測 及該金 該晶圓 單元, 封環分 ’為底 自探針 動與偏 外環型 圓正面 具有一 環相對 觸;探 測電容 底座上 單元包 屬片分 表面接 用於固 別與該 座之一 弓丨出之 壓電源 槽中; 之周緣 倒Ω形 ,嵌設 針與晶 之電極 ,以容 括設於 別經由 觸而與 接該底 晶圓之 部分, 導線連 接觸導 座尚可具有一晶圓槽,用 以容置晶圓之元 方式 本發明之内容可經由下述較佳 闡述而予揭示。第丨圖A太菸日日日實例與其相關圖式之 圖,可Γ】ί狀ΐ Λ: Λ晶圓姓刻夾持治具之外觀 看出衣狀上盘20、露出於上蓋2。中央而與其同心之----- Page 9 1220289 V. Description of the invention (4) An inner seal ring is embedded in contact with the Ω-shaped cross section; the upper cover is one of the upper circular section of the cross section at the center of the upper ring groove circle; A metal sheet is connected with a probe lead of the base to a base between the metal sheet and the upper cover. The front and back surfaces are immersed in contact pads, and the bottom piece is passed through. A ring-shaped groove is provided in the inner pair of corresponding grooves, which can be contacted with the upper density. The groove is located in the monitoring electrode and a gold monitor to form a capacitor so that the inner periphery of the inner density is tightly inserted into the groove of the groove. The wafer on the back of the ring base that is embedded in the sealing ring, the center surface is an electrode, the probe needle can be fixed to the upper dense handle, and the liquid level is from the outer tight ring groove base. The sealing ring and the wafer are biased to another wafer contained in the wafer, enabling the probe. A plurality of sealing rings and contacts; when exposed, the grooves are provided in the crystal and the peripheral edge of the inner seal is also used as a monitor. In contrast, the wafer and the wafer unit are monitored and the sealing ring is divided into the bottom and the probe. The outer side of the outer-circle-shaped circle has a ring opposite to each other; the unit package on the base of the detection capacitor is connected to a sub-surface used to fix the power supply groove that is out of one of the seat; the periphery is inverted Ω, and the pin and the The electrode of the crystal is to include a portion provided on the bottom wafer through contact, and the lead connection contact base can also have a wafer slot, which is used to accommodate the wafer. The following preferred explanation is disclosed. Figure 丨 A daily example of the smoke and its related diagrams, can be shown as follows: Λ: Λ The appearance of the holding fixture engraved with the wafer surname. See the clothes-like upper plate 20 exposed on the upper cover 2. Central and concentric
第10頁 1220289 五、發明說明(5) 部份底座1 0及複數個固接單开,士者 圖所示設於上蓋20及底座丨〇之蟬件知=之固接單元係如 圓蚀刻爽持治具之分解二螺=1所第3圖為本發明晶 具有-斜…減少死角或;酸如彳蓋2。”侧 上螺孔24與底座10之下螺孔18緊密螺合。、過上盘20之 本實施例並設有監測單元’監測單元主要包括 45、金屬片41及導線42(參考第丨圖)。導線42連接至 (19)之上端正面之接觸墊43,以便連接至 (未/於圖)。探針45可接觸晶圓心ί = ^金屬4卿成電容。此一設計不僅可由偵測探針45盘金 屬片jl及晶,60形成之電容是否已大於定值而及時偵知晶 圓60是否固定妥當,再藉由導線44連接至握柄之上端 底面之接觸墊46 ’使蝕刻槽上之電源接觸墊5〇2 (見第5圖) 將電壓源提供一組穩定電壓於模組中,使晶圓6〇之背面62 在蝕刻過程中,確實提供恆定之電壓給晶圓以提供蝕刻時 之偏壓(但亦可不加偏壓而進行蝕刻),以得到均勻之蝕刻 表面。本實施例之環狀的金屬片4丨係以螺件3 2固定於底座 10之中央,具有一彈簧之探針45則設於金屬片41中央。導 線42可容置於底座10及臂50内部,如第1圖之虛線所示。 此種將監測單元置於晶圓中央之設計可避免晶圓周邊表面 積之浪費’並使加偏壓時電場在晶圓四周均勻分布,增進 触刻之均勻性。Page 10 1220289 V. Description of the invention (5) Part of the base 10 and a plurality of fixed single openings, the figure shown in the figure of the cicada set on the upper cover 20 and the base = the fixed unit is a circle etch The decomposing two-spiral of Shuangzhi fixture = 1 The third picture shows that the crystal of the present invention has-oblique ... to reduce the dead angle or; The upper screw hole 24 on the side is tightly screwed with the screw hole 18 below the base 10. The monitoring unit passes through this embodiment of the upper plate 20 and has a monitoring unit. ). The wire 42 is connected to the contact pad 43 on the front side of the upper side of (19) for connection to (not shown in the figure). The probe 45 can contact the core of the wafer. ^ = Metal 4 to form a capacitor. This design can not only be detected Probe 45 disk metal sheet jl and crystal 60, whether the capacitance formed by the chip 60 is greater than a fixed value and timely detect whether the wafer 60 is properly fixed, and then connect the conductive pad 44 to the contact pad 46 on the top and bottom of the handle to make the etching groove The power contact pad 502 (see Figure 5) provides a stable voltage to the module from the voltage source, so that the back surface 62 of the wafer 60 does provide a constant voltage to the wafer during the etching process. The bias voltage during etching (but the etching can be performed without bias voltage) to obtain a uniform etching surface. The ring-shaped metal piece 4 in this embodiment is fixed in the center of the base 10 with a screw member 3 2 and has a The spring probe 45 is located in the center of the metal sheet 41. The wire 42 can be accommodated in the base 10 The inside of the arm 50 is shown by the dashed line in Fig. 1. This design of placing the monitoring unit in the center of the wafer can avoid the waste of the surface area around the wafer ', and make the electric field evenly distributed around the wafer when the bias voltage is applied. Carved uniformity.
第11頁 l22〇289 五、發明說明(6) 一 —^ 第2圖係本發明晶圓蝕刻夾持治具揭去 产f座10。底座10上具有同心之圓形外密· ,1 4 ’本實施例如第3圖及第4圖之密封環八= 了,底座10之内密封環i 4及上蓋2〇之上密二严 6〇之正面61及背面62之周緣緊i 在封壞13則與上蓋20直接接觸。此外,外密封 2環14及上密封環22係分別嵌設於具有Q形截 « p、内環型槽1 2及上環型槽2丨中,藉由縮小 之密封環1 3,1 4,2 2不易脫落。 本實施例如第2圖及第3圖所示,為避免傷 6 1之元件及容置金屬片4 1,底座1 〇形成一晶圓 $片槽1 6。晶圓槽1 5之形狀則視晶圓尺寸及外 需可固定晶圓6 0。探針孔1 7則設置於金屬片槽 使探針45可伸出與晶圓60接觸。 上述實施例中密封環的配置亦可改為於上 内密封環及一外密封環,而僅於底座1 0對應上 $環設置一下密封環;亦即將上述實施例之中 进封環1 3改設於上蓋2 0。 用於本發明晶圓蝕刻夾持治具之材質並無 —般耐腐蝕不致於蝕刻液中損壞之材質即可’ 此外,密封環1 3,1 4,2 2之材質則須具有適當 I 2 0後所見 1 3及内密封 剖面圖所 2 2相對應並 接觸,而外 環13、内密 面之外環型 槽口使嵌入 及晶圓正面 槽1 5及一金 緣而定,惟 1 6之中央, 蓋2 0設置一 蓋2 0之内密 底座1 0之外Page 11 l22〇289 V. Description of the invention (6) A — ^ Figure 2 shows the wafer etching clamping fixture of the present invention, and the f block 10 is produced. The base 10 is provided with a concentric circular outer seal, 1 4 'This embodiment is shown in Figures 3 and 4 of the seal ring eight = the inner ring 10 and the upper cover 20 are tightly sealed 6 The peripheral edges of the front surface 61 and the back surface 62 are tightly in contact with the upper cover 20 when the seal 13 is broken. In addition, the outer seal 2 ring 14 and the upper seal ring 22 are respectively embedded in the Q-shaped section «p, the inner ring groove 12 and the upper ring groove 2 丨, and the reduced seal rings 1 3, 1 4, 2 2 is not easy to fall off. As shown in FIG. 2 and FIG. 3 of this embodiment, in order to avoid damaging the components of 61 and accommodating the metal sheet 41, the base 10 forms a wafer $ chip slot 16. The shape of the wafer slot 15 can fix the wafer 60 depending on the wafer size and external needs. The probe holes 17 are provided in the metal sheet grooves so that the probe 45 can be extended to contact the wafer 60. The configuration of the sealing ring in the above embodiment can also be changed to the upper inner sealing ring and an outer sealing ring, and only a sealing ring corresponding to the upper ring at the base 10 is set; that is, the sealing ring is inserted into the above embodiment 1 3 Changed to the upper cover 2 0. There is no material used for the wafer etching clamping jig of the present invention-generally the material is resistant to corrosion and will not be damaged in the etchant. In addition, the material of the sealing ring 1 3, 1, 4, 2 2 must have an appropriate I 2 Seen after 0, 1 3, and 22 of the inner seal cross-section are corresponding and in contact, while the outer ring 13, the inner ring surface and the outer ring-shaped slot make the embedding and the front surface groove of the wafer 15 and a gold edge, but 1 6 In the center, cover 2 0 is set inside a cover 20 outside the dense base 1 0
特別限制, 例如PTfe。 彈性,可使Special restrictions, such as PTfe. Flexibility
1220289 五、發明說明(7) 上蓋2 0及底座10可緊密壓合。 本發明藉由底座1 0之二個密封環1 q, 衣丄d 丄4不僅Λϋ漆胡 效果,因内外密封環之間並無監測單开 砂叮 Ν平疋,故可減少a圓β η1220289 V. Description of the invention (7) The upper cover 20 and the base 10 can be tightly pressed. According to the present invention, the two sealing rings 1 q of the base 10 and the clothes 丄 d 丄 4 not only have the effect of ϋ lacquer lacquer, but because there is no monitoring between the inner and outer sealing rings, the single open sand bit NR is flat, so a circle β η can be reduced.
邊緣被遮蔽之寬度,可由傳統的1〇mm以上 1 M W bU 至3mm即可。此外,由於上密封環(22、|允〜/ mm,甚 τ衣^ 2 )與内密封環(1 4 )相 對設置使夾持應力降低,增加密封效杲,、、ώ ,丨、曰 Α ^ 双果減少晶圓破裂的 機會及增加製程良率。 本發明一較佳實施例為提供一種蝕刻夾持治且,為姓 刻夾持治具浸入餘刻槽之方式,請參考第5圖,在蝕刻~槽 5 01上,設有複數個電源5 0 2,於失持治具置於定位時,夾 持治具上之接觸墊4 5 ’即自動與蝕刻槽上之接觸墊5 0 2接 觸導通,偏塵電源5 0 5即自動連接至晶圓上,可供複數個 失持治具同時進行餘刻’因無導線外露,於機械手臂搬運 爽持治具時,不致為電線纏繞,搬運方便,有利於自動化 操作。蝕刻時底座上之晶圓置入蝕刻液中,在液面5 0 3之 下,而握柄則露出於液面5 0 3之上。 本發明另/較佳實施例為提供雙晶圓餘刻夾持治具。 如第6圖所示,在底座之上側及與上側相對之反面之下側 亦與上侧設置相同之外環型槽1 2、1 2,、内環型槽1 1、 11 ’、外密封環1 4、1 4 ’、内密封環1 3、1 3 ’及晶圓槽2卜 21’,並設有>個上蓋20、20’、二支探針45、45’各與晶The width of the masked edge can range from more than 10mm to 1M W bU to 3mm. In addition, because the upper seal ring (22, | allow ~ / mm, even τ ^^ 2) and the inner seal ring (1 4) are oppositely disposed, the clamping stress is reduced, and the sealing effect is increased. ^ Double fruit reduces the chance of wafer cracking and increases process yield. A preferred embodiment of the present invention is to provide a method for etching and clamping, and a method for immersing the clamping fixture into the remaining groove. Please refer to FIG. 5. A plurality of power sources 5 are provided on the etching ~ groove 5 01. 0 2. When the misplacement fixture is positioned, the contact pad 4 5 ′ on the holding fixture is automatically in contact with the contact pad 5 0 2 on the etching tank, and the bias power 5 5 5 is automatically connected to the crystal. On the circle, it can be used for multiple moments of dislocation fixtures. At the same time, because no wires are exposed, when the robotic arm moves the grip fixtures, it will not be entangled with wires, and it is easy to carry and facilitates automatic operation. During etching, the wafer on the base is placed in the etching solution, which is below the liquid surface of 503, and the handle is exposed above the liquid surface of 503. Another / preferred embodiment of the present invention is to provide a dual-wafer rest holding fixture. As shown in FIG. 6, the same outer ring grooves 1 2, 1 2, and inner ring grooves 1 1, 11 ', and outer seals are provided on the upper side of the base and the lower side opposite to the upper side. The ring 1 4, 1 4 ', the inner sealing ring 1 3, 1 3', and the wafer slot 2 and 21 ', and are provided with > top covers 20, 20', two probes 45, 45 'each with a crystal
第13頁 1220289 五、發明說明(8) 圓之中心點接觸,以加偏壓於晶圓,亦作監測電容之電極 之一;二金屬片槽16、16’,位於與晶圓中央表面相對之 底座上,以容置金屬片4卜4 Γ形成監測電容之另一電 極;二監測單元。同時夾持二片晶圓進行蝕刻;以增加產 量。 上述之實施例僅係本發明之較佳實施例,其他由本發 明之精神及申請專利範圍衍生之裝置亦應屬本發明之範 圍0Page 13 1220289 V. Description of the invention (8) The center point of the circle is in contact to bias the wafer, and it is also used as one of the electrodes of the monitoring capacitor. The two metal plate slots 16, 16 'are located opposite the central surface of the wafer. On the base, another electrode of the monitoring capacitor is formed by accommodating a metal sheet 4b 4 Γ; two monitoring units. Hold two wafers at the same time for etching; to increase throughput. The above-mentioned embodiments are merely preferred embodiments of the present invention, and other devices derived from the spirit of the present invention and the scope of patent application shall also fall within the scope of the present invention.
Claims (1)
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TW92107423A TWI220289B (en) | 2003-04-01 | 2003-04-01 | Wafer clamping apparatus for wet etching |
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TW92107423A TWI220289B (en) | 2003-04-01 | 2003-04-01 | Wafer clamping apparatus for wet etching |
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TW200421519A TW200421519A (en) | 2004-10-16 |
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CN102115023B (en) * | 2009-12-30 | 2012-10-17 | 中国科学院微电子研究所 | Clamp structure for protecting back surface and front surface of MEMS chip by wet chemical corrosion |
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CN105405802A (en) * | 2015-11-30 | 2016-03-16 | 浙江大学 | Wet etching protection clamp free of damage to wafer |
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Publication number | Priority date | Publication date | Assignee | Title |
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CN102115023B (en) * | 2009-12-30 | 2012-10-17 | 中国科学院微电子研究所 | Clamp structure for protecting back surface and front surface of MEMS chip by wet chemical corrosion |
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