TW588419B - Method and device for the production of process gases - Google Patents

Method and device for the production of process gases Download PDF

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Publication number
TW588419B
TW588419B TW091106866A TW91106866A TW588419B TW 588419 B TW588419 B TW 588419B TW 091106866 A TW091106866 A TW 091106866A TW 91106866 A TW91106866 A TW 91106866A TW 588419 B TW588419 B TW 588419B
Authority
TW
Taiwan
Prior art keywords
oxygen
hydrogen
gas
combustion
item
Prior art date
Application number
TW091106866A
Other languages
English (en)
Chinese (zh)
Inventor
Georg Dr Roters
Roland Mader
Helmut Sommer
Genrih Erlikh
Yehuda Pashut
Original Assignee
Mattson Thermal Products Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mattson Thermal Products Gmbh filed Critical Mattson Thermal Products Gmbh
Application granted granted Critical
Publication of TW588419B publication Critical patent/TW588419B/zh

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Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F22—STEAM GENERATION
    • F22B—METHODS OF STEAM GENERATION; STEAM BOILERS
    • F22B1/00—Methods of steam generation characterised by form of heating method
    • F22B1/003—Methods of steam generation characterised by form of heating method using combustion of hydrogen with oxygen
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Combustion & Propulsion (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Formation Of Insulating Films (AREA)
TW091106866A 2001-04-23 2002-04-04 Method and device for the production of process gases TW588419B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE10119741A DE10119741B4 (de) 2001-04-23 2001-04-23 Verfahren und Vorrichtung zum Behandeln von Halbleitersubstraten

Publications (1)

Publication Number Publication Date
TW588419B true TW588419B (en) 2004-05-21

Family

ID=7682338

Family Applications (1)

Application Number Title Priority Date Filing Date
TW091106866A TW588419B (en) 2001-04-23 2002-04-04 Method and device for the production of process gases

Country Status (7)

Country Link
US (1) US7144826B2 (https=)
EP (1) EP1382063A1 (https=)
JP (1) JP4276845B2 (https=)
KR (1) KR100700240B1 (https=)
DE (1) DE10119741B4 (https=)
TW (1) TW588419B (https=)
WO (1) WO2002086958A1 (https=)

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JP4609098B2 (ja) * 2004-03-24 2011-01-12 東京エレクトロン株式会社 被処理体の酸化方法、酸化装置及び記憶媒体
KR100966086B1 (ko) * 2005-03-08 2010-06-28 가부시키가이샤 히다치 고쿠사이 덴키 반도체장치의 제조 방법 및 기판처리장치
JP4453021B2 (ja) * 2005-04-01 2010-04-21 セイコーエプソン株式会社 半導体装置の製造方法及び半導体製造装置
GB0613044D0 (en) * 2006-06-30 2006-08-09 Boc Group Plc Gas combustion apparatus
US20080257719A1 (en) * 2007-04-21 2008-10-23 Ted Suratt Apparatus And Method For Making Flammable Gas
US9698439B2 (en) 2008-02-19 2017-07-04 Proton Power, Inc. Cellulosic biomass processing for hydrogen extraction
US8303676B1 (en) 2008-02-19 2012-11-06 Proton Power, Inc. Conversion of C-O-H compounds into hydrogen for power or heat generation
US9023243B2 (en) 2012-08-27 2015-05-05 Proton Power, Inc. Methods, systems, and devices for synthesis gas recapture
US10005961B2 (en) 2012-08-28 2018-06-26 Proton Power, Inc. Methods, systems, and devices for continuous liquid fuel production from biomass
CA2884860C (en) 2012-09-18 2021-04-20 Proton Power, Inc. C-o-h compound processing for hydrogen or liquid fuel production
US10563128B2 (en) 2014-01-10 2020-02-18 Proton Power, Inc. Methods for aerosol capture
US20150307784A1 (en) 2014-03-05 2015-10-29 Proton Power, Inc. Continuous liquid fuel production methods, systems, and devices
US9890332B2 (en) 2015-03-08 2018-02-13 Proton Power, Inc. Biochar products and production
CN107154354B (zh) 2016-03-03 2020-12-11 上海新昇半导体科技有限公司 晶圆热处理的方法
CN112413589B (zh) * 2020-11-04 2023-04-14 北京北方华创微电子装备有限公司 半导体工艺设备的点火装置及半导体工艺设备

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US3907981A (en) * 1973-03-12 1975-09-23 Rockwell International Corp Method for recombining hydrogen and oxygen
JPS57194522A (en) 1981-05-27 1982-11-30 Oki Electric Ind Co Ltd Thermal treatment of semiconductor wafer
DE3143050A1 (de) * 1981-10-30 1983-05-05 Varta Batterie Ag, 3000 Hannover Verfahren zur druckgesteuerten h(pfeil abwaerts)2(pfeil abwaerts)/o(pfeil abwaerts)2(pfeil abwaerts)-rekombination
DE3729113A1 (de) * 1987-09-01 1989-03-09 Fraunhofer Ges Forschung Verfahren zur druckgesteuerten katalytischen verbrennung von brennbaren gasen in einem oxidationsreaktor
DE3809367A1 (de) * 1988-03-19 1989-09-28 Kernforschungsz Karlsruhe Verfahren und vorrichtung zur verbrennung von wasserstoff mit sauerstoff
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JP3310386B2 (ja) * 1993-05-25 2002-08-05 忠弘 大見 絶縁酸化膜の形成方法及び半導体装置
JPH0710935U (ja) * 1993-07-24 1995-02-14 ヤマハ株式会社 縦型熱処理炉
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Also Published As

Publication number Publication date
US7144826B2 (en) 2006-12-05
EP1382063A1 (de) 2004-01-21
KR20030092091A (ko) 2003-12-03
JP2004522302A (ja) 2004-07-22
WO2002086958A1 (de) 2002-10-31
DE10119741A1 (de) 2002-10-24
KR100700240B1 (ko) 2007-03-26
DE10119741B4 (de) 2012-01-19
JP4276845B2 (ja) 2009-06-10
US20040137754A1 (en) 2004-07-15

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