TW523558B - Method and apparatus for electrochemical mechanical deposition - Google Patents
Method and apparatus for electrochemical mechanical deposition Download PDFInfo
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- TW523558B TW523558B TW088118951A TW88118951A TW523558B TW 523558 B TW523558 B TW 523558B TW 088118951 A TW088118951 A TW 088118951A TW 88118951 A TW88118951 A TW 88118951A TW 523558 B TW523558 B TW 523558B
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- 238000000034 method Methods 0.000 title claims description 95
- 230000008021 deposition Effects 0.000 title description 17
- 239000004020 conductor Substances 0.000 claims abstract description 112
- 238000005498 polishing Methods 0.000 claims abstract description 18
- 239000008151 electrolyte solution Substances 0.000 claims abstract description 17
- 238000009825 accumulation Methods 0.000 claims abstract 26
- 239000003792 electrolyte Substances 0.000 claims description 61
- 238000000227 grinding Methods 0.000 claims description 41
- 238000000151 deposition Methods 0.000 claims description 30
- 239000007788 liquid Substances 0.000 claims description 14
- 239000000243 solution Substances 0.000 claims description 14
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 12
- 229910052802 copper Inorganic materials 0.000 claims description 12
- 239000010949 copper Substances 0.000 claims description 12
- 229910052778 Plutonium Inorganic materials 0.000 claims description 6
- OYEHPCDNVJXUIW-UHFFFAOYSA-N plutonium atom Chemical compound [Pu] OYEHPCDNVJXUIW-UHFFFAOYSA-N 0.000 claims description 6
- 239000012530 fluid Substances 0.000 claims description 5
- 230000005611 electricity Effects 0.000 claims description 3
- 230000000779 depleting effect Effects 0.000 claims description 2
- 238000009434 installation Methods 0.000 claims description 2
- 238000003860 storage Methods 0.000 claims description 2
- 239000012212 insulator Substances 0.000 claims 9
- 230000002950 deficient Effects 0.000 claims 5
- 238000000746 purification Methods 0.000 claims 5
- 238000001035 drying Methods 0.000 claims 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 4
- 241000237858 Gastropoda Species 0.000 claims 2
- 230000004888 barrier function Effects 0.000 claims 2
- 238000009713 electroplating Methods 0.000 claims 2
- 229910052697 platinum Inorganic materials 0.000 claims 2
- 238000005868 electrolysis reaction Methods 0.000 claims 1
- 230000001172 regenerating effect Effects 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 62
- 229910052751 metal Inorganic materials 0.000 description 20
- 239000002184 metal Substances 0.000 description 20
- 239000004065 semiconductor Substances 0.000 description 16
- 239000010410 layer Substances 0.000 description 8
- 239000000126 substance Substances 0.000 description 5
- 230000002079 cooperative effect Effects 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000000875 corresponding effect Effects 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000003344 environmental pollutant Substances 0.000 description 3
- 231100000719 pollutant Toxicity 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000000429 assembly Methods 0.000 description 2
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- 239000000356 contaminant Substances 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
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- 238000004519 manufacturing process Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
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- 230000020169 heat generation Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
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- 150000002739 metals Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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- 239000002245 particle Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 229910052704 radon Inorganic materials 0.000 description 1
- SYUHGPGVQRZVTB-UHFFFAOYSA-N radon atom Chemical compound [Rn] SYUHGPGVQRZVTB-UHFFFAOYSA-N 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000005496 tempering Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
- B23H5/00—Combined machining
- B23H5/06—Electrochemical machining combined with mechanical working, e.g. grinding or honing
- B23H5/08—Electrolytic grinding
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/02—Electroplating of selected surface areas
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/04—Electroplating with moving electrodes
- C25D5/06—Brush or pad plating
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- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/22—Electroplating combined with mechanical treatment during the deposition
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- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/60—Electroplating characterised by the structure or texture of the layers
- C25D5/605—Surface topography of the layers, e.g. rough, dendritic or nodular layers
- C25D5/611—Smooth layers
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- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/60—Electroplating characterised by the structure or texture of the layers
- C25D5/615—Microstructure of the layers, e.g. mixed structure
- C25D5/617—Crystalline layers
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- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/627—Electroplating characterised by the visual appearance of the layers, e.g. colour, brightness or mat appearance
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
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- Crystallography & Structural Chemistry (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electroplating Methods And Accessories (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Electrodes Of Semiconductors (AREA)
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Description
經濟部智慧財產局員工消費合作社印製 β23558 五、發明說明( 本發明係有關於-種用於電化學機械沉積的方法鱼裝 置:更W確地說,係㈣於_種於何體晶圓上提供導電 材料之沉積與研磨的方法與裝置。 半導體晶圓的金屬化,即在晶圓表面之阻隔/金屬基 底層上沉積-金屬層於半導體產業中具有重要且廣泛的: 用。傳、统中,!呂及其他金屬經沉積而成為由多層金屬層製 成的半導體晶片中的一層金屬層。直至最近,由於相較於 鋁,銅金屬之電阻較低並讓使用銅金屬之半導體晶片執行 速度加快,熱產生降低,導致晶片容量與效能大幅提升, 因此對於在半導體晶片上沉積銅金屬有極大的興趣。 在ULSI晶片製程中,要將銅沉積薄膜均勻一致的填 入深次微米的介層洞及溝渠是越來月為困難了,特別是當 結構大小低於0.25mm以下而縱橫比大於5比i的情況下更 為困難。一般的化學氣相沉積及電極板電鍍技術均用於填 滿這些蝕刻於矽基材中的深洞。目前這些方法在發展及整 合ULSi技術之局部内連結線路上導致非常高的花費及缺 陷密度。 造成咼花費原因之一是使用導電材料,特別是銅的方 法。更明確地說,使用某些污染物,習知上用為調節劑, 於電解液中’以防止或減緩金屬沉積至晶圓表面上的速率 係為已知。由於這些污染物相較於要填滿的一般介層洞還 大’將金屬沉積至晶圓表面上會有部份受阻。然而此種阻 礙係因將污染物加至電解液中分佈而造成的,因而導致部 份介層洞無法具有理想應有的導電特性。特別是沉積導體
J. L, . ^---------. (請先閱讀背面之注意事項再填寫本頁) 4 523558 A7 B7 Φ 經濟部智慧財產局員工消費合作社印製 五、發明說明( 的曰曰粒大小因使用此類污染物而無法形成如預期中的大, 因而導致製成產品的品質問題,以及因需要在其後進行大 量的回火時間而增加花費。 此外’達成所需結構的費肖,即該結射介層洞有導 電材料仍需要沉積與研磨兩種分開的步驟。在傳統利用習 =的陽極、陰極及含金屬電解液金屬沉積金屬薄膜後,接 者需要有一研磨部驟,為因應目前高效能裝置之要求,此 研磨步驟通“化學機械研磨㈣。當研磨達成預定的結 果時’其係在相當大的費用下達成,且在使用研磨液上需 要極大的準確度’以達成所需之高度導電表面研磨效果。 因此,需要一較不昂貴且更正確的於-半導體晶片上 施加一導體的方法。 本發明之-目的為提供_可用以沉積及研磨半導體晶 片上之導電材料的方法與袭置。 本發明之-目的為提供一可用以同時沉積及研磨半導 體曰a片上之導電材料的方法與裝置。 本發明之一目的為提供_ 田 八 了用以同時沉積一導電材料 於半導體晶片的深财及自半導體晶片上之表面頂端研磨 /耗盡電解液的方法與裝置。 本發明之另一目的為提供一可用 ΰ 了用以循裱利用用於沉積 +導體日日片上導電材料之電解液的方法與裝置。 這些與其他本發明之目的可藉由自電解液中沉積 =至:::預定區域來達成。這些步驟係用於當此應 备曰曰片於陽極附近進行沉積時,利用-在晶圓表 本紙張尺度刺t關家標準(CNS)A4規格 S--------^---------^ (請先閱讀背面之注音?事項再填寫本頁) 5 經濟部智慧財產局員工消費合作社印製 523558 A7 |-—-------- B7_ 五、發明說明(3 ) 面上的電解液將導電材料沉積至晶圓的預定區域,並在導 電材料違行沉積時,藉由機械性研磨、保護、或降低電解 液與其他區域接觸,來避免導電材料在預定區域外的地方 累積。 進行此方法的裝置包括一在施加電力時可接收第一電 位的陽極。一陰極或晶圓離陽極一距離置放並可在施加電 力日寸接收相反於第一電位的第二電位。一個塾或數個墊置 於陽極與陰極之間,該墊可對晶片表面移動,並在電力供 應至陽極及陰極時抑制或降低導電材料施用至其他特定區 域。此外,一流體腔可使電解液置於晶圓表面上或墊上, 而導電材料在施用電力的狀況下於晶片所需區域上形成。 圖示簡單說明 這些與其他本發明之優點,經由以下本發明之較佳實 施例詳細說明及配合其相輔之圖示下,將更為清處而更易 於瞭解: 苐1A及1B圖就明本發明之第一實施例; 第2圖說明本發明之第二實施例; 第3圖說明根據本發明之一要填入導電體的代表性介 層洞,·及 第4A-4C圖說明本發明之第三實施例。 本發明之較佳實施例將在以下說明。如前所述及,傳 統製程使用不同機器,在不同時間,以便在含有許多不同 半導體晶片的半導體晶圓表面上之介層洞或其他預期位置 中得到導電材料,而不要將導電材料沉積到其他非預期的
本紙張尺度適用中國國家標準(CNS)A4規格(21〇 297公釐) .—τ—I—!丨丨裝--------訂--------- (請先閱讀背面之注意事項再填寫本頁) 6 523558 五、發明說明(4 ) 位置。因此,製造一高品質半導體積體電路裝置所需要的 設備費-用皆顯格外可觀。 . 本發明之設計不同的實施例,其可讓相同的裝置,稱 為「電化學機械沉積裝置」用以沉積一導電材料,並接著 " 研磨或降低沉積該導電材料的速度。該「電化學機械沉積 - 裝置」亦可同時沉積及/或研磨導電材料。本發明雖可用 ⑩練何導電性材料,其特別適用於以銅金屬為導體,及用 於含次微米大小並有高縱橫比之結構的1;1^1積體電路之 製造上。在各種實施例中,本發明利用傳統部件,以獨特 的方式安排,·以達成前述之功能。 第3圖首先用以說明一積體電路的一部份,其包括一 形成介層洞的部份。讓介層洞,如半導體技藝中所熟知, 為-導電材料,其將不同的電路層電性連接。如第3圖所 不,一介層洞包括一導體2,其將較低層的導電區4與較上 層的導電區6連接,其中介電材料8介於該等區間。當然可 ^►了解到本發明可運用於任何多層積體電路晶片的金屬声上 經濟部智慧財產局員工消費合作社印
第1A與1B圖說明本發明之第!實施例,該實施例具有 兩種不同的操作型態。在第_種型態中,—導電金屬,最 好為銅,或其他導電材料係藉由一電解液施用於介層洞或 及/或其他所需的區域,其時在非預定區域所長成的導電 材料因機械研磨及/或將電解液自本文述及之半導體晶圓 表面區域的上方移去而加以消除,或至少減至最低。在第 二種型態中’晶片的研磨,使用一傳統化學機械研磨,可
本紙張尺度適用中_家標準(CNS)A4規格(21Q χ挪 523558 A7 B7 五、發明說明(5 ) 利用該相同的裝置進行至此種化學機械研磨所需的程度。 依本發解實施例之設計在大多狀況下只需要第一種操作。 第二種操作型態及其所對應的結構均包括在需要相奮高程 度之研磨的狀況中。 訂 弟1A圖說明根據本發明之第一實施例的電化學機械 沉積裝置10之概要圖。< 該圖以透視的方法說明機械墊總成 12 ’其具有一圍繞第一軸14旋轉之機械墊32,及一晶圓頭 總成16其具有一晶圓繞第二軸18旋轉。如圖所示,該晶圓 在由機械塾32覆盡的區域内旋轉,如在下文中會進一不 說明,該區域為在容器20内,該容器係保持各種溶液於其 中。雖然圖上所顯示僅對單一晶圓進行操作,可了解到每 一個機械盤總成12可配者數個晶圓頭總成丨6 ,且裝置丨〇也 可包括數個機械盤總成12,各對不同的晶圓進行操作。
第1B圖說明根據本發明之裝置1〇從第1A圖中的A_A 線切所顯示出的截面圖r如圖所示,裝置1〇可將金屬薄 膜沉積於晶圓上。 每個晶圓包括一非導電,最好是圓形的頭總成22,其 具有一最好為幾個微米深的凹陷處在中央,該凹陷處最好 含一固定墊25。半導體晶圓係載入此凹陷處22,先以晶背 由傳統的傳輸型態或真空抽吸機構靠著固定墊25,以確保 晶圓在使用中相對於晶圓頭為靜止固定不動。一非導電固 持環24環繞於晶圓頭總成1〇的周圍,其包括至少一個〇形 環或其匕橡膠式封件26及一彈簧承載陰極接觸電極28,其 各推抵住晶圓表面,並在晶圓的最邊緣處固持住晶圓。需 本紙張尺度朝中_ *鮮(CNS)A4職(21。 523558 A7
I 裝 訂 523558 經濟部智慧財產局員工消費合作社印製 Α7 Β7 五、發明說明(7 ) 進料通道44亦可在操作本發明之第二型態時用以施用 .. ... 去離子水’如下文中所述。 在依本發明之第一型態操作時,裝置1〇藉由一電源施 加一負電位至陰極揍觸電極28,及一正電位至陽極30。電 解液經由進料通道34及44中:之其一或兩者引至機械研磨墊 32之表面。當在兩電極間建立起一電流時,電解液中的金 屬分子離子化並沉積在晶圓的表面上,受陰極接觸電極吸 引至其上。當此反應發生後,亦藉由機械塾總成12進行一 機械研磨。此機械墊總成12藉由機械墊32的研磨或磨擦動 作’實質防止金屬分子成為永久沉積至不需沉積金屬的晶 圓表面上。如此,上述所指出之目前用來防止或降低此種 沉積的污染物或添加物就不再有其需要了,或者可以使用 較小許多之百分比。因此,依第一型態操作的結果,金屬 係沉積於介層動及其類似需沉積的地方,並可實質避免沉 積於不需沉積的區域。 .. 1 · . ... 於第二操作型態,可進行數個不同的傳統操作,依經 由進料通道44引入的化學物品決定。若需化學機械研磨, 則可引入研磨液,雖然此種特定的操作型態較為不佳,因 其實質增加了引進裝置流體腔中的不純物量。在較佳之第 二操作.型態中,裝置10可用於淨刷研磨金屬基底層或藉由 反轉電流電極性(陰極與陽極)做為一電研磨器。此外, 若需要使晶片乾淨但以去離子水維持濕性,裝置1〇亦可通 入Μ水’且可利用機械盤以去離子水進行研磨。此後,在 將晶圓自盤32提起時,可在旋轉晶圓頭總成12上進行晶圓 本紙張尺度過用宁國國家標準(CNS)A4規格(21〇χ 297&Μ -1 ^ --------訂--------- (請先閱讀背面之注意事項再填寫本頁) 10 523558
五、發明說明(8 旋乾。 經濟部智慧財產局員工消費合作社印製
(請先閱讀背面之注意事項再填寫本頁) 第2幽說明本發明之另一實施例。類似的元件標號用 以說明對應於上述第以及⑺圖之結構。在此發明的實施 例中,晶圓為靜止,而電化學機械沉積裝置1〇〇係置於一 容器内(未示)其收及用後之溶液。此電化學機械沉積裝 置1〇〇大部份結構對應前述參考第1B圖之晶圓頭總成16。 然而’在此實施例中,電化學機械沉積裝置1〇〇包括一機 械塾32 ’其經由轉軸36旋轉。圖示說明轉軸36利用dc馬 達、砝碼104、承載組106及108及彈簧11〇轉動並移動至各 處,上述幾項部件均屬習知。 電解液藉由通道34引入,並流經多孔陰極30及機械墊 32至所需的晶圓表面。其經由排出通道排放。 第2圖實施例之操作非常類似於以第1A及1B圖所述之 苐型態。特別是’利用一電極,如前所述,沉積導電材 料至預期的介層洞及/或其他區域,可與利用旋轉墊32機 進行械研磨晶圓表面時同時獲得,該旋轉墊32可為長方形 、圓形、餅形或其類似形狀。 根據本實施例之電化學機械沉機裝置亦可減低對脈衝 式產生電源的需要,因為由墊移動而產生的機械脈衝已產 生足夠的脈衝。此機械脈衝係因墊在相對於晶圓運動時, 晶圓與塾接觸而產生,此機械脈衝的優點為其不需要具有 脈衝功能之電源就能改良的晶粒大小及銅膜之完整性。 第4A-4C圖說明本發明之另一種較佳實施例。類似的 元件標號用以說明對應於上述第ΙΑ、1B及2圖之結構。在 本紙張尺度適用中國國家標準(CNS)A4規格(21〇 x 297公釐) 11 經濟部智慧財產局員工消費合作社印製 523558 A7 ------^__ 五、發明說明(9 ) 此發明的實施例中,電化學機械沉積裝置2〇〇包括一機械 塾總成2ί〇,其對應於機械墊總成12 ,❿曰曰曰圓頭總成謂對 應晶圓頭總成16。在此實施例中,電化學機械沉積裝置2〇〇 包括一圓形或正方形機械墊212銜接於一圓柱狀陽極214, 其如第4Α及4C圖所示繞一第一軸216旋轉,而晶圓如第4Β 圖所示繞一第二軸242旋轉。 機械塾212的大小可為研磨整個晶圓之可利用部份, 或只能在一時間内研磨晶圓的某一部份。若在一段時間内 只能研磨部份晶圓,亦可包括一驅動總成(未示)以移動 陽極214,並藉其移動機械墊212,以便使得其可在該段時 間中與需要進行研磨的晶圓部份接觸。 於操作中,可了解到帶狀機械墊212以相類似於滾輪 式油漆刷粉刷牆壁的方式研磨晶圓。在操作時,電解液或 其他溶液自一置於鄰近陽極214的儲存槽(未示)引至機 械盤212。在本發明之一特定實施例中,該陽極214包含一 進料通道224其包括一通道226於陽極214及製成於陽極224 中的孔洞228,其結合提供一種將溶液送達機械墊212之通 道。或者,該電鍍溶液可直接經由通道213依前述之方法 分散至塾212。此溶液承裝於一圍繞晶圓頭總成而攀成 的非導電性腔230 ’及一非導電性承接外殼25〇中,該^卜殼 包括一外通道252。〇型環及其他傳統結構,如前所述, 用以密封溶液承裝外殼250中的溶液可用於此實施例。 同樣的,根據本實施例之電化學機械沉機裝皇亦可減 低對脈衝式產生電源的需要,因為由墊移動而產生的機械 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公爱)
(請先閱讀背面之注意事項再填寫本頁) 523558 A7 一 _ B7_ 五、發明說明(10) 脈衝已產生足夠的脈衝。 根據本發明,於任何實施例中,由於機械運作係用以 避免在非預定區域之晶圓表面上長成不需要的導體,通常 就不需要調節劑,或者僅需較傳統中使用量小許多之百分 ’ 比量。此外’可得到一研磨後光滑及光亮之導電層表面。 、 雖然本發明僅就上述實施例詳細說明,然熟此技藝者 丨· 應知在不偏離本發明之新穎性教示及優點下,有關對該等 示範實施例所做之任何修改均應屬本發明之範轉。 裝--- (請先閱讀背面之注意事項再填寫本頁)
訂--------線 經濟部智慧財產局員工消費合作社印製 13 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 523558 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明(11 ) 2…導體 4,6···導電區 8···介電材料 10,100,200 裝置 12,210…機械墊總成 16…晶圓頭總成 14,18,36,38,242".軸 22…凹陷處 20…容器 22…頭總成 25…固定墊 24…固持環 26…橡膠式封件 28…陰極接觸電極 電化學機械沉積 元件標號對照 30…陽極板 31,230·.·腔 32…機械塾 34,44,224…進料通道 40…排放通道 110…彈簧 104".石去碼 106,108…承載組 212…機械墊 213,226…通道 214…陽極 228···孔洞 240…晶圓頭總成 250…外殼 252…通道 (請先閱讀背面之注意事項再填寫本頁) 丨嘹 訂---------線| 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 14
Claims (1)
- 申請專利範圍 第8 81 18 9 51號專利申請案申請專利範圍修正本、〜 修正日期·· 91年〇4月 (請先閲讀背面之注意事項再填寫本頁) i.二種自-物件之-電解液沉積—導電材料的方法該物 件,、有-上表面和一配置該上表面之上的空腔部份且 G二置方於二表面以及該物件之空腔部份之上的 導電層’該方法包括以下步驟: 於該物件及-陽極間施加—電位差,㈣件置㈣ 近陽極處,因而以電鍍方法使該導電材料施加到至少配 置於該物件之空腔部份之上的導電層;及 在進行施加導電材料之步驟時,藉由-塾以研磨配 置於該物件之上表面之上的導電層,來減少導電材料 在配置於該物件之上表面之上的導電層的累積。 2. 如申請專利範圍第1項之方法,其更包含下列步驟: 液自-進行施加和減低累積發生步驟之腔中移除電解 淨化該經移除之電解液;以及 重新補充用於回_腔中以施加至該物件之電解液 3. 如申請專利第1項之方法,其中該導電材料包含銅 4. 如申請專利範圍第!項之方法,其中該物件之空腔部份 係包含一介層洞且該物件包含一晶圓。 5. 如申請專利範圍第!項之方法,其中該電解液具有一非 實質含量的研磨液。 6•如申請專利範圍第!項之方法,其中該導電層係為一阻 隔/基底層。 本紙張尺度適用中國國家標準(CNS) A4規格 15 523558 A8 B8 C8 D8、申請專利範圍 鲁 鲁 7·如申請專利範圍第1項之方法,其中該減低累積的步驟 包括移動該墊,以助於維持該電解液與配置於該物件之 空腔部份上之導電層的接觸。 8·如申請專利範圍第7項之方法,其中移動該墊的步驟亦 產生機械脈衝,因而改善晶粒大小。 9·如申請專利範圍第1項之方法,其中該墊附接於陽極, 且該施加導電材料得步驟更包括使該電解液流經該陽 極與該墊的步驟。 1〇·如申請專利範圍第丨項之方法,其中該施加導電材料的 步驟更包括直接將該電解液分散至該墊的步驟。 •如申明專利範圍第1項之方法,其中減少累積的步驟防 止導電材料在該物件之上表面的導電層之上被生成。 12·如申請專利範圍第丨項之方法,其中施加的步驟,該電 位差施加具有一第一極性的電位差,且更在施加步驟前 包括以下步驟: ^加一具有與該第一極性相反的第二極性之第二 電位差於該物件與該陽極間,該陽極具有一墊附貼其上 :及 在施加該第二電位差時研磨位在該物件之上表面 上的導電層。 13.如申清專利範圍第12項之方法,其中該電解液具有一非 實質含量的研磨液。 14·如申請專利範圍第丨項之方法,其更包括施加 一研磨液 亥物件並在6亥導電材料被施加至該配置於該空腔部 本家標準(⑽M規格⑵ ..........裝·-----------------訂..................線 (請先閲讀背面之注意事項再填寫本頁) 16 A8 B8 C8 -------- —___Μ____ 申請專利範圍' " 伤上的導電層且充滿該空腔部份之後,化學機械地研磨 該物件的步驟。 如申明專利圍第1項之方法,其中該物件為一晶圓。 16·如申請專利範圍第!項之方法,其中該施加導電材料的 步驟包括使電解液流經該塾的步驟。 17·如申請專利範圍第丨項之方法,其中該施加電位差 的步 驟使用一鈍性陽極且該電解液包含該導電材料。 18·如申凊專利範圍第丨項之方法,其中該施加電位差的步 驟使用白金為該陽極。 19· 一種沉積一導電材料的裝置,其在施加電力下自電解液 况積一導電材料至至少一物件上之一空腔部份,並減少 該導電材料在該物件之上表面部份的累積,該裝置包括 一在施加電力時可接收一第一電位的電極,該電極 離該物件一距離置放; 一墊,其附接於該電極並置於該電極與該物件之間 其中當思欲施加該第一電位時,該塾相對於該物件之 移動可在該塾與該物件之上表面部份接觸下,降低該導 電材料累積於上表面部份,且沈積一較大量的導電材料 至該空腔部份。 2〇·如申請專利範圍第19項之裝置,其中複數個墊被附接於 該電極且並置於該電極與該物件之間,其中該等複數個 塾相對於該物件之移動可在該等複數個塾與該物件之 上表面部份接觸下,降低該導電材料累積於上表面部份 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) D8 、申請專利範圍 如申明專利範圍第19項之裝置,其中該物件繞一轴旋轉 ’且該塾繞同一轴旋轉。 22·如申請專利範圍第19項之裝置,其中該物件繞一軸旋轉 ,而該墊繞不同於該第一轴之第二軸旋轉。 23·如申请專利範圍第19項之裝置,其中該墊的形狀為圓筒 狀。 24·如申請專利範圍第19項之裝置,其中該墊係環繞該電極 塑形,該電極的形狀為圓柱狀。 25·如申請專利範圍第19項之裝置,其更包括: 物件頭總成,其係用以支撐該物件並使該物件圍 繞一第一軸旋轉;及 一包括該墊與該電極之墊總成,該墊可相對於該物 件移動,以助於維持該電解液與該物件之空腔部份的接 觸。 26·如申請專利範圍第19項之裝置,其中該腔包括: 一進料通道,其用以使該電解液流至該物件上;及 一出料通道,其用以使該電解液自該腔中流出。 27·如申請專利範圍第26項之裝置,其更包括 一再生儲存槽,其用以補充並淨化自該出料通道流 出之電解液。 28·如申請專利範圍第26項之裝置,其中該電解液自該進料 通道經該電極與該墊流至該物件。 29·如申請專利範圍第26項之裝置,其中該電解液自該進料 18 本紙張尺度適财關雜準(CNS) A4規格(21GX297公釐) 通道直接流至該墊和該物件。 3〇·如申請專利範圍第19項之裝置,其更包括: 一物件頭總成,其係用以支撐該物件,該物件可繞 一第一軸旋轉; 一墊總成,其具有附接至該陽極之墊,該陽極為圓 柱狀且可繞一第二軸旋轉。 31·如申請專利範圍第30項之裝置,其中該圓柱狀陽極包括 一通道及數個孔洞,其中該電解液經該墊流過該通道及 該數個孔洞至該物件。 32·如申請專利範圍第30項之裝置,其中該電解液自一進料 通道直接流至該墊。 33·如申請專利範圍第3〇項之裝置,彡中在接續於當該陽極 接文該第一電位之第一期間的一第二期間,該陽極接受 一與該第一電位相反之第二電位,且於該第二期間,該 墊研磨該物件之上表面部份且自該上表面部份移除導 電材料。 34·如申請專利範圍第30項之裝置,其更包括: 一腔,其可使該電解液置於該物件上,並使該導電材料 沉積於該物件的空腔部份上。 35·如申請專利範圍第19項之裝置,其中在接續於當該陽極 接文該第一電位之第一期間的一第二期間,該陽極接受 一與該第一電位相反之第二電位,且於該第二期間,該 塾研磨該物件之上表面部份且自該上表面部份移除導 電材料。 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 19 、申請專利範圍 36·如申請專利範圍第35項之裝置,其更包括: 腔’其可使1¾電解液置於該物件i,並使該導電 材料於該第-期間沉積於該物件的空腔部份上且於該 第二期間自該上表面部份移除。 37.-種將含一導電材料之一電解液傳送至一物件表面之 方法,俾以在施加電力下沉積該導電材料,該方法包括 以下步驟: 移動一與該物件表面接觸之塾;及 施加該電解液通過該塾,以使該電解液與該物件表 面接觸,因而提供-適合在施加電力下沉積位在該物件 表面上之導電材料的條件。 认如申請專利範圍第37項之方法,其中在施加該電解液之 步驟中,該導電材料被沉積至該物件之一空腔中,且藉 由移動位在該物件之上表面上之墊而抑制該導電材料 沉積到該物件的上表面之上。 9·如申明專利範圍第38項之方法,其中該施加電解液的步 驟更包括下列步驟: 於该物件與一陽極間施加一為一電位差形式的電力 :以及 當施加該電位差時移動該墊,藉此引起位在該物件 之空腔中之導電材料的累積,且減少位於該物件之上表 面上的導電材料的累積。 40·如申請專利範圍第39項之方法,其中施加該電解液通過 該墊的步驟提供一電解液至該物件的流動。 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐).......--------------裝! (請先閲讀背面之注意事項再填寫本頁) 訂丨 :線丨 20 六、申請專利範圍 41.如申請專利範圍第39項之方法,其更包含下列步驟·· 自一進行施加步驟之腔中移除該電解液; 淨化該經移除之電解液;以及 重新補充用於回到該腔中以施加至該物件之電解液 42·如申請專利範圍第39項之方法,其中移動該墊的步驟係 有助於維持該電解液與於該物件之空腔部份的接觸。 43·如申請專利範圍第39項之方法,其中移動該墊的步驟亦 產生機械脈衝,因而改善晶粒大小。 44·如申凊專利範圍第37項之方法,其中該物件為一晶圓。 45·如申请專利範圍第37項之方法,其中該物件之空腔係包 含一介層洞且該物件包含一晶圓。 46·如申請專利範圍第37項之方法,其中該導電材料包含銅 47·如申請專利範圍第37項之方法,其中該施加電位差的步 驟使用一鈍性陽極且該電解液包含該導電材料。 48·如申請專利範圍第47項之方法,纟中該施加電位差的步 驟使用白金作為該陽極。 49· 一種沉積一導電材料的裝置,其可同時自一電解液沉積 一導電材料至_物件上之—空腔部份,並減少該導電材 料在該物件之上表面的累積,該裝置包括: 一在施加電力時可接收一第一電位的陽極,該陽極 離該物件一距離置放,該物件可在施加電力時接收與該 第一電位相反的第二電位; 申凊專利範圍 一個置於該陽極與該物件間之墊,在電力供應至該 陽極與該物件時,該墊可移動式接觸該物件,並抑制施 加該導電材料於該物件之上表面,該墊留住並傳送該電 解液與該物件之空腔部份接觸;及 一腔,其可使該電解液被配置於該物件之一表面上 ’並使導電材料形成於該物件的空腔部份上。 5〇·如申請專利範圍第49項之裝置,其更包括: 一具有附接於該陽極之墊的墊總成;及 一可用於支撐該物件的物件頭總成。 51·如申請專利範圍第49項之裝置,其中該物件包含一晶圓 52· —種用於電鍍和電研磨一物件之裝置,該物件具有一上 表面和一配置於該上表面之上的空腔部份,且具有一配 置於該物件之上表面和空腔部份上的導電層,該裝置包 含: 一電極,其可予許一界於該電極和該物件間之欲被 施加的第一電位差和一界於該電極和該物件間之欲被 施加之具有一與該第一電位差相反極性的第二電位差 :以及 一墊,其被置於鄰近於該物件處,其中 當施加該第一電位差時,該墊相對於該物件的移動 係引起自該物件之導電層之導電上表面的電解液的缺 乏,而非自該物件之導電層之導電空腔部份;以及 當施加該第二電位差時,該墊相對於該物件的移動 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) (請先閲讀背面之注意事項再填寫本頁) .訂· •線丨 22 523558 A8 B8 C8 ----— __Μ____ 六、申請柄範^ " — ~ 係引起自該物件之導電表面之導電材料的移除。 53·如申請專利範圍第52項之裝置,其中該電極係被連接至 該研磨墊。 54.如申請專利範圍第52項之裝置,其更包括用於循環該電 解液之構件。 55·如申請專利範圍第52項之裝置,其中該塾與該物件之導 電表面產生接觸。 %·如申請專利範圍第55項之裝置,其中該電極係被連接至 該研磨塾。 57·—種自一電解液沉積一導電材料至一物件上並移除某 /儿積之導電材料的方法,該物件具有一上表面和一配 置該上表面之上的空腔部份,且具有一配置於該上表面 以及該物件之空腔部份之上的導電層,該方法包括以下 步驟: 於忒物件及一電極間施加一第一電位差,該物件置 於鄰近該電極處,因而使該導電材料施加到至少配置於 該物件之空腔部份之上的導電層;及 在進行施加該導電材料之步驟時,藉由一墊以研磨 配置於該物件之上表面之上的導電層,來減少導電材料 在配置於該物件之上表面之上的導電層的累積; 於該物件之空腔中的導電材料的施加之後,於該物 件與該電極間,提供一具有與該第一電位差相反極性之 第二電位差,以進行將一些先前施加之導電材料自該物 件之導電層中移除;以及 本紙張尺度適用中國國家標準(CNS) Α4規格(210 X 297公釐) ♦ (請先閲讀背面之注意事項再填寫本頁) 、^7丨 ,φ. 23 A8 B8 C8 D8 _ 申請專利範圍 研磨具有先前累積於其上之導電材料的導電層,同 時進行提供該第二電位差。 8·如申5月專利範圍第57項之方法,其中藉由研磨減少累積 之步驟包括使電解液缺乏,其使用一可移動墊,該可移 動墊係研磨該物件之導電層之導電上表面。 59.如申請專利範圍第58項之方法,其中移動研磨該導電表 面之墊亦引起至少一些自該物件之導電層之上表面之 導電材料的移除。 如申請專利範圍第58項之方法,其中該研磨步驟包括引 入一研磨液至該導電表面上的步驟。 61. 如申請專利範圍第58項之方法,其更包括,在提供和研 磨步驟完成之後,淨化該物件的步驟。 62. 如申請專利範圍第61項之方法,其更包括,在該淨化步 驟之後,旋轉乾燥該物件之步驟。 63·如申请專利範圍第58項之方法,其中該研磨步驟係在未 引入一研磨液下進行。 6(如申清專利範圍第57項之方法,其中該研磨步驟包括引 入一研磨液至該導電表面上的步驟。 65·如申請專利範圍第57項之方法,其更包括,在提供和研 磨步驟完成之後,淨化該物件的步驟。 66. 如申請專利範圍第65項之方法,其更包括,在該淨化步 驟之後’研磨該物件之步驟。 67. 如申請專利範圍第65項之方法,其更包括,在該淨化步 驟之後,旋轉乾燥該物件之步驟。 本紙張尺度適用中國國家標準(CNS) Μ規格(21〇><297公爱) ..................::裝..................訂..................線· (請先閲讀背面之注意事項再填寫本頁) 523558 A8 B8 C8 ^____D8 六、申請專利範圍 68·如申請專利範圍第57項之方法,其中該研磨步驟係在未 引入一研磨液下進行。 (請先閲讀背面之注意事項再填寫本頁) 69· —種自一電解液沉積一導電材料至一物件上的方法,該 物件具有一上表面和一配置該上表面之上的空腔部份 ,且具有一配置於該上表面以及該物件之空腔部份之上 的導電層,該方法包括以下步驟: 於該物件及一電極間施加一第一電位差;以及 當施加該第一電位差時,使自該物件之導電層之導 電上表面的電解液缺乏,而非自該物件之導電層之導電 空腔部份,使得位於該導電層之導電空腔部份上之導電 材料的累積比起該導電層之導電上表面上之導電材料 的累積以較大的速率進行。 70·如申請專利範圍第69項之方法,其中使該電解液缺乏之 步驟係使用一可移動墊,該可移動墊係研磨該物件之導 電層之導電上表面。 71·如申請專利範圍第70項之方法,其中移動研磨該導電表 面之墊亦引起至少一些自該物件之導電層之上表面之 導電材料的移除。 72·如申請專利範圍第69項之方法,其中該導電材料包含銅 73.如申請專利範圍第69項之方法,其中該物件包含一晶圓 4.如申明專利範圍第69項之方法,其中該電解液具有一非 實質含量之研磨液。 ,____ 張尺度翻中關家標準(_ Α4規格⑵〇><297公釐) 25 D8 、申請專利範圍 75·如申請專利範圍第69項之方法,其中該導電層係為一阻 隔/基底層。 (請先閲讀背面之注意事項再填寫本頁) 76·如申请專利範圍第69項之方法,其中該減低累積的步驟 包括移動該墊,以助於維持該電解液與配置於該物件之 空腔部份上之導電層的接觸。 77.如申請專利範圍第76項之方法,其中移動該墊的步驟亦 產生機械脈衝,因而改善晶粒大小。 78·如申請專利範圍第76項之方法,其中該施加導電材料的 步驟更包括直接地將該電解液分散至該物件的步驟。 •如申明專利範圍第76項之方法,其中施加該導電材料的 步驟包括使該電解液流經該墊的步驟。 80·如申請專利範圍第69項之方法,其中該施加的步驟中, 該電位差施加具有一第一極性的電位差,且在該缺乏步 驟之後更包括以下步驟: 施加一具有與該第一極性相反的第二極性之第二電 位差於該物件與該電極間;及 在W加该第二電位差時研磨位在該物件之上表面上 的導電層。 81 ·如申請專利範圍第8〇項之方法,其中該電解液具有一非 實質含量的研磨液。 82. 如申請專利範圍第69項之方法,其中該施加導電材料的 步驟包括使該電解液流經該墊的步驟。 83. 如申請專利範圍第69項之方法,其中該施加導電材料的 步驟更包括直接將電解液分散至該物件的步驟。 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐) 26 523558 A8 B8 C8 _______D8 六、申請專利範圍_ ^ ~" 84· —種自一電解液沉積一導電材料至一物件上並接著 除某-沉積之導電材料的方法,該物件具有—上表面和 -配置該上表面之上的空腔部份,且具有—配置於該上 表面以及該物件之空腔部份之上的導電層,該方法包括 以下步驟: 於該物件及一電極間施加一第一電位差;以及 當施加該第一電位差時,使自該物件之導電層之導 電上表面的電解液缺乏,而非自該物件之導電層之導電 空腔部份,使得位於該導電層之導電空腔部份上之導電 材料的累積比起該導電層之導電上表面上之導電材料 的累積以較大的速率進行; 於該物件之空腔中之導電材料的累積之後,於該物 件與該電極間,提供一具有與該第一電位差相反極性之 第一電位差’以進行將一些先前累積之導電材料自該物 件之導電層中移除;以及 研磨具有先前累積於其上之導電材料的導電層,同 時進行提供該第二電位差。 85.如申請專利範圍第84項之方法,其中使電解液缺乏的步 驟’其使用一可移動墊,該可移動墊係研磨該物件之導 電層之導電上表面。 86·如申請專利範圍第85項之方法,其中移動研磨該導電表 面之塾亦引起至少一些自該物件之導電層之上表面之 導電材料的移除。 87·如申請專利範圍第85項之方法,其中該研磨步驟包括引 本紙張尺度適用中國國家標準(CNS) Α4規格(210X297公釐) 27 (請先閲讀背面之注意事項再填寫本頁) •訂丨 1青專利範圍 入一研磨液至該導電表面上的步驟。 88·如申請專利範圍第85項之方法,其更包括,在提供和研 磨步驟完成之後,淨化該物件的步驟。 89.如申請專利範圍第88項之方法,其更包括,在該淨化步 驟之後,旋轉乾燥該物件之步驟。 90·如申請專利範圍第85項之方法,其中該研磨步驟係在未 引入一研磨液下進行。 91 ·如申請專利範圍第84項之方法,其中該研磨步驟包括引 入一研磨液至該導電表面上的步驟。 92·如申請專利範圍第84項之方法,其更包括,在提供和研 磨步驟完成之後,淨化該物件的步驟。 93·如申請專利範圍第92項之方法,其更包括,在該淨化步 驟之後,旋轉乾燥該物件之步驟。 94. 如申請專利範圍第84項之方法,其中該研磨步驟係在未 引入一研磨液下進行。 95. —種物件,其包含: 一第一導電區域; 一配置於該第一導電層上的絕緣體; 至少一配置於該絕緣體中的開口; 一配置於該開口内之第二導電層,藉此與該第一導 電區域建立電接觸,該第二導電層具有一上表面,且經 由以下步驟而被形成: 提供一配置於該絕緣體上和該開口内之導電體; 配置一具有一導電材料之電解液於該導電體上和該 28 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐) 523558 A8 B8 C8 ___D8 六、申請專利範ffi 開口内; 於該物件和一陽極間施加一電位差,以使得該導電 材料施加至該開口内和至該導電體上; 在進行施加該導電材料之步驟時,藉由一墊以研磨 該第一導電層之上表面,來減少導電材料在配置於該絕 緣體上之第二導電層的累積。 96·如申凊專利範圍第95項之物件,其中該第二導電層僅被 配置於至少一開口之内,且藉由移除該第二導電層之部 份和配置於該絕緣體上之導電體而獲得,該減少累積的 步驟包括,當施加該電位差時,使自該第二導電層之上 表面的電解液缺乏,而非自該至少的一開口,使得位於 該開口内之導電材料的累積比起位於該絕緣體上之第 一導電層之上表面上之導電材料的累積以較大的速率 進行。 97·如申請專利範圍第96項之物件,其中在該缺乏步驟之後 ’該減少累積的步驟更包括: 於该物件與一陰極間,施加一與該電位差相反的第 一電位差;及 研磨位在該第二導電層和導電體之上表面,以移除 配置於該絕緣體上之第二導電層和該導電體的部份。 98·如申請專利範圍第95項之物件,其中該第二導電層係被 配置於該絕緣體和該開口之上。 99·如申請專利範圍第98項之物件,其中該減少累積的步驟 包括: 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) (請先閲讀背面之注意事項再填寫本頁) 訂丨 ♦ 29 523558 A8 Βδ C8 D8 m 申請專利範圍 當施加該電位差時,使自該第二導電層之上表面的 電解液缺乏,而非自該至少的一開口,使得位於該至少 開口内之導電材料的累積比起位於該絕緣體上之第 一導電層之上表面上之導電材料的累積以較大的速率 進行。 100·—種自一物件之上導電層移除導電材料的方法,其包 含下列步驟: 於一電極和該物件之上導電層之間提供一溶液; 於該物件和具有一極性之電極之間施加一電位差, 以進行㈣物件之導電層之某些導電材料的移除;以及 於提供該電位差步驟進行的同時研磨該導電層。 ιοί.如申請專利範圍第則項之方法,其中該提供之步驟 係於該電極和該物件之上導電層之間提供一電解液。 亂如申―請專利範圍帛⑻項之方法’其中該電解液具有 非貫質含置的研磨液。 肌如申請專利範圍第102項之方法,其中施加該導電材 料的步驟包括使該電解液流經該墊的步驟。 •如申請專利範圍第1G2項之方法’其中施加該導電材 料的步驟包括直接將該電解液分散至該物件的步驟。 人如申請專利範圍第1G2項之方法,其中該導電材 含銅。 106·如申請專利範圍第ι〇5項之 曰 々含,其中該物件包含一 B曰圓。 107.-種使用一溶液用於電研磨-具有—上導電層之裝 104 105 本紙張尺度適用中國國家標準(CNS) A4規格(21〇χ297公爱) ------------------------裝…… (請先閲讀背面之注意事項再填寫本頁) •訂· •線· 30 523558 A8 B8 C8 D8 申請專利範圍 置’其包含: 電極,當於該電極和該物件之上導電層間提供以 該溶液時,該電極可予許一界於該電極和該物件之上導 電層間之欲被施加的第一電位差,以造成該導電材料自 該物件之上導電層的移除;以及 一墊,其被置於可接觸該物件之上導電層處,其中 當維持該接觸和施加該電位差時,該墊相對於該物件的 移動係進一步地引起該導電材料自該物件之上導電層 的移除。 108·如申請專利範圍第1〇7項之裝置,其中該電極係被連 接於該塾。 109·如申請專利範圍第108項之裝置,更包括用於導入該 溶液的構件。 110·如申請專利範圍第109項之裝置,其中該用於導入該 溶液的構件係導入一具有一非實質含量之研磨液的電 解液。 111·如申請專利範圍第110項之裝置,其中該用於導入的 構件係再循環該電解液。 (請先閲讀背面之注意事項再填寫本頁) .訂· Φ 本紙張尺度適用中國國家標準(哪)A4規格(21〇χ297公釐) 31
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Families Citing this family (315)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7449098B1 (en) | 1999-10-05 | 2008-11-11 | Novellus Systems, Inc. | Method for planar electroplating |
US7531079B1 (en) | 1998-10-26 | 2009-05-12 | Novellus Systems, Inc. | Method and apparatus for uniform electropolishing of damascene IC structures by selective agitation |
US6709565B2 (en) * | 1998-10-26 | 2004-03-23 | Novellus Systems, Inc. | Method and apparatus for uniform electropolishing of damascene ic structures by selective agitation |
US6719615B1 (en) | 2000-10-10 | 2004-04-13 | Beaver Creek Concepts Inc | Versatile wafer refining |
US6610190B2 (en) | 2000-11-03 | 2003-08-26 | Nutool, Inc. | Method and apparatus for electrodeposition of uniform film with minimal edge exclusion on substrate |
US7427337B2 (en) * | 1998-12-01 | 2008-09-23 | Novellus Systems, Inc. | System for electropolishing and electrochemical mechanical polishing |
US7204924B2 (en) * | 1998-12-01 | 2007-04-17 | Novellus Systems, Inc. | Method and apparatus to deposit layers with uniform properties |
US7425250B2 (en) * | 1998-12-01 | 2008-09-16 | Novellus Systems, Inc. | Electrochemical mechanical processing apparatus |
US6902659B2 (en) * | 1998-12-01 | 2005-06-07 | Asm Nutool, Inc. | Method and apparatus for electro-chemical mechanical deposition |
US7204917B2 (en) * | 1998-12-01 | 2007-04-17 | Novellus Systems, Inc. | Workpiece surface influencing device designs for electrochemical mechanical processing and method of using the same |
US7578923B2 (en) * | 1998-12-01 | 2009-08-25 | Novellus Systems, Inc. | Electropolishing system and process |
US6409904B1 (en) * | 1998-12-01 | 2002-06-25 | Nutool, Inc. | Method and apparatus for depositing and controlling the texture of a thin film |
US6413388B1 (en) | 2000-02-23 | 2002-07-02 | Nutool Inc. | Pad designs and structures for a versatile materials processing apparatus |
US6534116B2 (en) * | 2000-08-10 | 2003-03-18 | Nutool, Inc. | Plating method and apparatus that creates a differential between additive disposed on a top surface and a cavity surface of a workpiece using an external influence |
US7097755B2 (en) * | 1998-12-01 | 2006-08-29 | Asm Nutool, Inc. | Electrochemical mechanical processing with advancible sweeper |
US6497800B1 (en) * | 2000-03-17 | 2002-12-24 | Nutool Inc. | Device providing electrical contact to the surface of a semiconductor workpiece during metal plating |
US6251235B1 (en) | 1999-03-30 | 2001-06-26 | Nutool, Inc. | Apparatus for forming an electrical contact with a semiconductor substrate |
KR20010020807A (ko) * | 1999-05-03 | 2001-03-15 | 조셉 제이. 스위니 | 고정 연마재 제품을 사전-조절하는 방법 |
AU5733400A (en) * | 1999-06-14 | 2001-01-02 | Cvc Products, Inc. | Method and apparatus for electroplating depressions of a substrate simultaneously preventing plating on the substrate surface using a membrane cover |
US6319834B1 (en) * | 1999-08-18 | 2001-11-20 | Advanced Micro Devices, Inc. | Method and apparatus for improved planarity metallization by electroplating and CMP |
US6383934B1 (en) | 1999-09-02 | 2002-05-07 | Micron Technology, Inc. | Method and apparatus for chemical-mechanical planarization of microelectronic substrates with selected planarizing liquids |
US6355153B1 (en) * | 1999-09-17 | 2002-03-12 | Nutool, Inc. | Chip interconnect and packaging deposition methods and structures |
US6653226B1 (en) * | 2001-01-09 | 2003-11-25 | Novellus Systems, Inc. | Method for electrochemical planarization of metal surfaces |
US6756307B1 (en) * | 1999-10-05 | 2004-06-29 | Novellus Systems, Inc. | Apparatus for electrically planarizing semiconductor wafers |
JP2001188254A (ja) * | 1999-10-21 | 2001-07-10 | Matsushita Electric Ind Co Ltd | 基板内選択的電気化学処理装置と基板内選択的化学処理装置及びアクティブ基板の検査修正方法 |
US6341998B1 (en) | 1999-11-04 | 2002-01-29 | Vlsi Technology, Inc. | Integrated circuit (IC) plating deposition system and method |
US6299741B1 (en) * | 1999-11-29 | 2001-10-09 | Applied Materials, Inc. | Advanced electrolytic polish (AEP) assisted metal wafer planarization method and apparatus |
US6379223B1 (en) | 1999-11-29 | 2002-04-30 | Applied Materials, Inc. | Method and apparatus for electrochemical-mechanical planarization |
US6640151B1 (en) | 1999-12-22 | 2003-10-28 | Applied Materials, Inc. | Multi-tool control system, method and medium |
US6632335B2 (en) * | 1999-12-24 | 2003-10-14 | Ebara Corporation | Plating apparatus |
KR100773165B1 (ko) * | 1999-12-24 | 2007-11-02 | 가부시키가이샤 에바라 세이사꾸쇼 | 반도체기판처리장치 및 처리방법 |
US6612915B1 (en) | 1999-12-27 | 2003-09-02 | Nutool Inc. | Work piece carrier head for plating and polishing |
US6354916B1 (en) | 2000-02-11 | 2002-03-12 | Nu Tool Inc. | Modified plating solution for plating and planarization and process utilizing same |
US7303462B2 (en) * | 2000-02-17 | 2007-12-04 | Applied Materials, Inc. | Edge bead removal by an electro polishing process |
US6537144B1 (en) | 2000-02-17 | 2003-03-25 | Applied Materials, Inc. | Method and apparatus for enhanced CMP using metals having reductive properties |
US6848970B2 (en) * | 2002-09-16 | 2005-02-01 | Applied Materials, Inc. | Process control in electrochemically assisted planarization |
US6991528B2 (en) * | 2000-02-17 | 2006-01-31 | Applied Materials, Inc. | Conductive polishing article for electrochemical mechanical polishing |
US7125477B2 (en) * | 2000-02-17 | 2006-10-24 | Applied Materials, Inc. | Contacts for electrochemical processing |
US6991526B2 (en) | 2002-09-16 | 2006-01-31 | Applied Materials, Inc. | Control of removal profile in electrochemically assisted CMP |
US20050092621A1 (en) * | 2000-02-17 | 2005-05-05 | Yongqi Hu | Composite pad assembly for electrochemical mechanical processing (ECMP) |
US20030213703A1 (en) * | 2002-05-16 | 2003-11-20 | Applied Materials, Inc. | Method and apparatus for substrate polishing |
US7077721B2 (en) * | 2000-02-17 | 2006-07-18 | Applied Materials, Inc. | Pad assembly for electrochemical mechanical processing |
US7303662B2 (en) * | 2000-02-17 | 2007-12-04 | Applied Materials, Inc. | Contacts for electrochemical processing |
US20040020789A1 (en) * | 2000-02-17 | 2004-02-05 | Applied Materials, Inc. | Conductive polishing article for electrochemical mechanical polishing |
US7678245B2 (en) * | 2000-02-17 | 2010-03-16 | Applied Materials, Inc. | Method and apparatus for electrochemical mechanical processing |
US7374644B2 (en) * | 2000-02-17 | 2008-05-20 | Applied Materials, Inc. | Conductive polishing article for electrochemical mechanical polishing |
US6979248B2 (en) * | 2002-05-07 | 2005-12-27 | Applied Materials, Inc. | Conductive polishing article for electrochemical mechanical polishing |
US7066800B2 (en) * | 2000-02-17 | 2006-06-27 | Applied Materials Inc. | Conductive polishing article for electrochemical mechanical polishing |
US20040182721A1 (en) * | 2003-03-18 | 2004-09-23 | Applied Materials, Inc. | Process control in electro-chemical mechanical polishing |
US20080156657A1 (en) * | 2000-02-17 | 2008-07-03 | Butterfield Paul D | Conductive polishing article for electrochemical mechanical polishing |
US7059948B2 (en) * | 2000-12-22 | 2006-06-13 | Applied Materials | Articles for polishing semiconductor substrates |
US7670468B2 (en) * | 2000-02-17 | 2010-03-02 | Applied Materials, Inc. | Contact assembly and method for electrochemical mechanical processing |
US6962524B2 (en) * | 2000-02-17 | 2005-11-08 | Applied Materials, Inc. | Conductive polishing article for electrochemical mechanical polishing |
US7029365B2 (en) * | 2000-02-17 | 2006-04-18 | Applied Materials Inc. | Pad assembly for electrochemical mechanical processing |
US20090020437A1 (en) * | 2000-02-23 | 2009-01-22 | Basol Bulent M | Method and system for controlled material removal by electrochemical polishing |
US7141146B2 (en) * | 2000-02-23 | 2006-11-28 | Asm Nutool, Inc. | Means to improve center to edge uniformity of electrochemical mechanical processing of workpiece surface |
US20060131177A1 (en) * | 2000-02-23 | 2006-06-22 | Jeffrey Bogart | Means to eliminate bubble entrapment during electrochemical processing of workpiece surface |
US6482307B2 (en) | 2000-05-12 | 2002-11-19 | Nutool, Inc. | Method of and apparatus for making electrical contact to wafer surface for full-face electroplating or electropolishing |
US6852208B2 (en) * | 2000-03-17 | 2005-02-08 | Nutool, Inc. | Method and apparatus for full surface electrotreating of a wafer |
US6582579B1 (en) * | 2000-03-24 | 2003-06-24 | Nutool, Inc. | Methods for repairing defects on a semiconductor substrate |
AU2001247428A1 (en) * | 2000-04-19 | 2001-11-07 | Nutool, Inc. | Process to minimize and/or eliminate conductive material coating over the top surface of a patterned substrate and layer structure made thereby |
US20060118425A1 (en) * | 2000-04-19 | 2006-06-08 | Basol Bulent M | Process to minimize and/or eliminate conductive material coating over the top surface of a patterned substrate |
US6313038B1 (en) | 2000-04-26 | 2001-11-06 | Micron Technology, Inc. | Method and apparatus for controlling chemical interactions during planarization of microelectronic substrates |
WO2001084621A1 (en) * | 2000-04-27 | 2001-11-08 | Ebara Corporation | Rotation holding device and semiconductor substrate processing device |
AU2001247109A1 (en) * | 2000-04-27 | 2001-11-12 | Nutool, Inc. | Conductive structure for use in multi-level metallization and process |
KR100502330B1 (ko) * | 2000-04-29 | 2005-07-20 | 삼성에스디아이 주식회사 | 격벽이 마련된 기판 및 이를 이용한 플라즈마 표시장치 |
US6387289B1 (en) * | 2000-05-04 | 2002-05-14 | Micron Technology, Inc. | Planarizing machines and methods for mechanical and/or chemical-mechanical planarization of microelectronic-device substrate assemblies |
US6478936B1 (en) * | 2000-05-11 | 2002-11-12 | Nutool Inc. | Anode assembly for plating and planarizing a conductive layer |
US6695962B2 (en) | 2001-05-01 | 2004-02-24 | Nutool Inc. | Anode designs for planar metal deposits with enhanced electrolyte solution blending and process of supplying electrolyte solution using such designs |
US7195696B2 (en) * | 2000-05-11 | 2007-03-27 | Novellus Systems, Inc. | Electrode assembly for electrochemical processing of workpiece |
TWI228548B (en) * | 2000-05-26 | 2005-03-01 | Ebara Corp | Apparatus for processing substrate and apparatus for processing treatment surface of substrate |
US6612901B1 (en) * | 2000-06-07 | 2003-09-02 | Micron Technology, Inc. | Apparatus for in-situ optical endpointing of web-format planarizing machines in mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies |
US7754061B2 (en) * | 2000-08-10 | 2010-07-13 | Novellus Systems, Inc. | Method for controlling conductor deposition on predetermined portions of a wafer |
US6921551B2 (en) * | 2000-08-10 | 2005-07-26 | Asm Nutool, Inc. | Plating method and apparatus for controlling deposition on predetermined portions of a workpiece |
US6708074B1 (en) | 2000-08-11 | 2004-03-16 | Applied Materials, Inc. | Generic interface builder |
US7078308B2 (en) * | 2002-08-29 | 2006-07-18 | Micron Technology, Inc. | Method and apparatus for removing adjacent conductive and nonconductive materials of a microelectronic substrate |
US7094131B2 (en) * | 2000-08-30 | 2006-08-22 | Micron Technology, Inc. | Microelectronic substrate having conductive material with blunt cornered apertures, and associated methods for removing conductive material |
US7153410B2 (en) * | 2000-08-30 | 2006-12-26 | Micron Technology, Inc. | Methods and apparatus for electrochemical-mechanical processing of microelectronic workpieces |
US7134934B2 (en) * | 2000-08-30 | 2006-11-14 | Micron Technology, Inc. | Methods and apparatus for electrically detecting characteristics of a microelectronic substrate and/or polishing medium |
US7074113B1 (en) * | 2000-08-30 | 2006-07-11 | Micron Technology, Inc. | Methods and apparatus for removing conductive material from a microelectronic substrate |
US7192335B2 (en) * | 2002-08-29 | 2007-03-20 | Micron Technology, Inc. | Method and apparatus for chemically, mechanically, and/or electrolytically removing material from microelectronic substrates |
US7129160B2 (en) * | 2002-08-29 | 2006-10-31 | Micron Technology, Inc. | Method for simultaneously removing multiple conductive materials from microelectronic substrates |
US7220166B2 (en) * | 2000-08-30 | 2007-05-22 | Micron Technology, Inc. | Methods and apparatus for electromechanically and/or electrochemically-mechanically removing conductive material from a microelectronic substrate |
US7153195B2 (en) * | 2000-08-30 | 2006-12-26 | Micron Technology, Inc. | Methods and apparatus for selectively removing conductive material from a microelectronic substrate |
US7160176B2 (en) * | 2000-08-30 | 2007-01-09 | Micron Technology, Inc. | Methods and apparatus for electrically and/or chemically-mechanically removing conductive material from a microelectronic substrate |
US7112121B2 (en) * | 2000-08-30 | 2006-09-26 | Micron Technology, Inc. | Methods and apparatus for electrical, mechanical and/or chemical removal of conductive material from a microelectronic substrate |
US6867448B1 (en) | 2000-08-31 | 2005-03-15 | Micron Technology, Inc. | Electro-mechanically polished structure |
WO2002023613A2 (en) * | 2000-09-15 | 2002-03-21 | Rodel Holdings, Inc. | Metal cmp process with reduced dishing |
US6746589B2 (en) * | 2000-09-20 | 2004-06-08 | Ebara Corporation | Plating method and plating apparatus |
US6464855B1 (en) | 2000-10-04 | 2002-10-15 | Speedfam-Ipec Corporation | Method and apparatus for electrochemical planarization of a workpiece |
US7377836B1 (en) | 2000-10-10 | 2008-05-27 | Beaver Creek Concepts Inc | Versatile wafer refining |
US20020104764A1 (en) * | 2000-11-20 | 2002-08-08 | Gautam Banerjee | Electropolishing and chemical mechanical planarization |
US7188142B2 (en) | 2000-11-30 | 2007-03-06 | Applied Materials, Inc. | Dynamic subject information generation in message services of distributed object systems in a semiconductor assembly line facility |
US6896776B2 (en) * | 2000-12-18 | 2005-05-24 | Applied Materials Inc. | Method and apparatus for electro-chemical processing |
US6946066B2 (en) * | 2001-07-20 | 2005-09-20 | Asm Nutool, Inc. | Multi step electrodeposition process for reducing defects and minimizing film thickness |
US20040170753A1 (en) * | 2000-12-18 | 2004-09-02 | Basol Bulent M. | Electrochemical mechanical processing using low temperature process environment |
US6943112B2 (en) * | 2002-07-22 | 2005-09-13 | Asm Nutool, Inc. | Defect-free thin and planar film processing |
US6802946B2 (en) | 2000-12-21 | 2004-10-12 | Nutool Inc. | Apparatus for controlling thickness uniformity of electroplated and electroetched layers |
US7172497B2 (en) * | 2001-01-05 | 2007-02-06 | Asm Nutool, Inc. | Fabrication of semiconductor interconnect structures |
US6866763B2 (en) * | 2001-01-17 | 2005-03-15 | Asm Nutool. Inc. | Method and system monitoring and controlling film thickness profile during plating and electroetching |
US6613200B2 (en) | 2001-01-26 | 2003-09-02 | Applied Materials, Inc. | Electro-chemical plating with reduced thickness and integration with chemical mechanical polisher into a single platform |
US6736952B2 (en) * | 2001-02-12 | 2004-05-18 | Speedfam-Ipec Corporation | Method and apparatus for electrochemical planarization of a workpiece |
US7204743B2 (en) * | 2001-02-27 | 2007-04-17 | Novellus Systems, Inc. | Integrated circuit interconnect fabrication systems |
JP2002254248A (ja) * | 2001-02-28 | 2002-09-10 | Sony Corp | 電解加工装置 |
US7201829B2 (en) * | 2001-03-01 | 2007-04-10 | Novellus Systems, Inc. | Mask plate design |
US6811680B2 (en) * | 2001-03-14 | 2004-11-02 | Applied Materials Inc. | Planarization of substrates using electrochemical mechanical polishing |
US7232514B2 (en) | 2001-03-14 | 2007-06-19 | Applied Materials, Inc. | Method and composition for polishing a substrate |
US20060169597A1 (en) * | 2001-03-14 | 2006-08-03 | Applied Materials, Inc. | Method and composition for polishing a substrate |
US7160432B2 (en) * | 2001-03-14 | 2007-01-09 | Applied Materials, Inc. | Method and composition for polishing a substrate |
US7582564B2 (en) * | 2001-03-14 | 2009-09-01 | Applied Materials, Inc. | Process and composition for conductive material removal by electrochemical mechanical polishing |
US6899804B2 (en) | 2001-12-21 | 2005-05-31 | Applied Materials, Inc. | Electrolyte composition and treatment for electrolytic chemical mechanical polishing |
US7128825B2 (en) | 2001-03-14 | 2006-10-31 | Applied Materials, Inc. | Method and composition for polishing a substrate |
US7323416B2 (en) * | 2001-03-14 | 2008-01-29 | Applied Materials, Inc. | Method and composition for polishing a substrate |
US6508925B2 (en) * | 2001-03-30 | 2003-01-21 | Siemens Westinghouse Power Corporation | Automated brush plating process for solid oxide fuel cells |
US6869515B2 (en) | 2001-03-30 | 2005-03-22 | Uri Cohen | Enhanced electrochemical deposition (ECD) filling of high aspect ratio openings |
US6932896B2 (en) | 2001-03-30 | 2005-08-23 | Nutool, Inc. | Method and apparatus for avoiding particle accumulation in electrodeposition |
US6572755B2 (en) * | 2001-04-11 | 2003-06-03 | Speedfam-Ipec Corporation | Method and apparatus for electrochemically depositing a material onto a workpiece surface |
US6852630B2 (en) * | 2001-04-23 | 2005-02-08 | Asm Nutool, Inc. | Electroetching process and system |
US7344432B2 (en) * | 2001-04-24 | 2008-03-18 | Applied Materials, Inc. | Conductive pad with ion exchange membrane for electrochemical mechanical polishing |
US7137879B2 (en) * | 2001-04-24 | 2006-11-21 | Applied Materials, Inc. | Conductive polishing article for electrochemical mechanical polishing |
US7698012B2 (en) | 2001-06-19 | 2010-04-13 | Applied Materials, Inc. | Dynamic metrology schemes and sampling schemes for advanced process control in semiconductor processing |
US7101799B2 (en) * | 2001-06-19 | 2006-09-05 | Applied Materials, Inc. | Feedforward and feedback control for conditioning of chemical mechanical polishing pad |
US7160739B2 (en) | 2001-06-19 | 2007-01-09 | Applied Materials, Inc. | Feedback control of a chemical mechanical polishing device providing manipulation of removal rate profiles |
US6592742B2 (en) | 2001-07-13 | 2003-07-15 | Applied Materials Inc. | Electrochemically assisted chemical polish |
US6908540B2 (en) * | 2001-07-13 | 2005-06-21 | Applied Materials, Inc. | Method and apparatus for encapsulation of an edge of a substrate during an electro-chemical deposition process |
TW584899B (en) * | 2001-07-20 | 2004-04-21 | Nutool Inc | Planar metal electroprocessing |
US6722943B2 (en) | 2001-08-24 | 2004-04-20 | Micron Technology, Inc. | Planarizing machines and methods for dispensing planarizing solutions in the processing of microelectronic workpieces |
JP3961377B2 (ja) * | 2001-09-20 | 2007-08-22 | 株式会社リコー | 光走査装置及び画像形成装置 |
US6863794B2 (en) * | 2001-09-21 | 2005-03-08 | Applied Materials, Inc. | Method and apparatus for forming metal layers |
US6706158B2 (en) * | 2001-09-28 | 2004-03-16 | Intel Corporation | Electrochemical mechanical planarization |
US7238092B2 (en) * | 2001-09-28 | 2007-07-03 | Novellus Systems, Inc. | Low-force electrochemical mechanical processing method and apparatus |
US20030072639A1 (en) * | 2001-10-17 | 2003-04-17 | Applied Materials, Inc. | Substrate support |
US6815354B2 (en) * | 2001-10-27 | 2004-11-09 | Nutool, Inc. | Method and structure for thru-mask contact electrodeposition |
JP2005509092A (ja) * | 2001-11-02 | 2005-04-07 | ナトゥール・インコーポレイテッド | 前進可能なスイーパを使った電気化学的機械的処理 |
US6776693B2 (en) | 2001-12-19 | 2004-08-17 | Applied Materials Inc. | Method and apparatus for face-up substrate polishing |
US20070295611A1 (en) * | 2001-12-21 | 2007-12-27 | Liu Feng Q | Method and composition for polishing a substrate |
US6802955B2 (en) | 2002-01-11 | 2004-10-12 | Speedfam-Ipec Corporation | Method and apparatus for the electrochemical deposition and planarization of a material on a workpiece surface |
JP3759043B2 (ja) * | 2002-01-21 | 2006-03-22 | 東京エレクトロン株式会社 | 陽極化成装置、陽極化成方法 |
US6951599B2 (en) * | 2002-01-22 | 2005-10-04 | Applied Materials, Inc. | Electropolishing of metallic interconnects |
US6837983B2 (en) | 2002-01-22 | 2005-01-04 | Applied Materials, Inc. | Endpoint detection for electro chemical mechanical polishing and electropolishing processes |
US20030146102A1 (en) * | 2002-02-05 | 2003-08-07 | Applied Materials, Inc. | Method for forming copper interconnects |
US7131889B1 (en) | 2002-03-04 | 2006-11-07 | Micron Technology, Inc. | Method for planarizing microelectronic workpieces |
US20030168344A1 (en) * | 2002-03-08 | 2003-09-11 | Applied Materials, Inc. | Selective metal deposition for electrochemical plating |
US20030199112A1 (en) | 2002-03-22 | 2003-10-23 | Applied Materials, Inc. | Copper wiring module control |
US6793797B2 (en) * | 2002-03-26 | 2004-09-21 | Taiwan Semiconductor Manufacturing Co., Ltd | Method for integrating an electrodeposition and electro-mechanical polishing process |
US20030201185A1 (en) * | 2002-04-29 | 2003-10-30 | Applied Materials, Inc. | In-situ pre-clean for electroplating process |
US20050194681A1 (en) * | 2002-05-07 | 2005-09-08 | Yongqi Hu | Conductive pad with high abrasion |
US20030209523A1 (en) * | 2002-05-09 | 2003-11-13 | Applied Materials, Inc. | Planarization by chemical polishing for ULSI applications |
US7189313B2 (en) * | 2002-05-09 | 2007-03-13 | Applied Materials, Inc. | Substrate support with fluid retention band |
US7853904B2 (en) * | 2002-06-07 | 2010-12-14 | Cadence Design Systems, Inc. | Method and system for handling process related variations for integrated circuits based upon reflections |
US7393755B2 (en) * | 2002-06-07 | 2008-07-01 | Cadence Design Systems, Inc. | Dummy fill for integrated circuits |
US7152215B2 (en) * | 2002-06-07 | 2006-12-19 | Praesagus, Inc. | Dummy fill for integrated circuits |
US7363099B2 (en) * | 2002-06-07 | 2008-04-22 | Cadence Design Systems, Inc. | Integrated circuit metrology |
US7712056B2 (en) * | 2002-06-07 | 2010-05-04 | Cadence Design Systems, Inc. | Characterization and verification for integrated circuit designs |
US20030229875A1 (en) * | 2002-06-07 | 2003-12-11 | Smith Taber H. | Use of models in integrated circuit fabrication |
US7124386B2 (en) * | 2002-06-07 | 2006-10-17 | Praesagus, Inc. | Dummy fill for integrated circuits |
AU2003274370A1 (en) * | 2002-06-07 | 2003-12-22 | Praesagus, Inc. | Characterization adn reduction of variation for integrated circuits |
US7774726B2 (en) * | 2002-06-07 | 2010-08-10 | Cadence Design Systems, Inc. | Dummy fill for integrated circuits |
US6808611B2 (en) * | 2002-06-27 | 2004-10-26 | Applied Materials, Inc. | Methods in electroanalytical techniques to analyze organic components in plating baths |
US6869335B2 (en) | 2002-07-08 | 2005-03-22 | Micron Technology, Inc. | Retaining rings, planarizing apparatuses including retaining rings, and methods for planarizing micro-device workpieces |
KR100559041B1 (ko) * | 2002-07-11 | 2006-03-10 | 매그나칩 반도체 유한회사 | 반도체 소자의 구리 배선 형성 방법 |
US20040072445A1 (en) * | 2002-07-11 | 2004-04-15 | Applied Materials, Inc. | Effective method to improve surface finish in electrochemically assisted CMP |
US7341502B2 (en) * | 2002-07-18 | 2008-03-11 | Micron Technology, Inc. | Methods and systems for planarizing workpieces, e.g., microelectronic workpieces |
US7799200B1 (en) | 2002-07-29 | 2010-09-21 | Novellus Systems, Inc. | Selective electrochemical accelerator removal |
US6860798B2 (en) * | 2002-08-08 | 2005-03-01 | Micron Technology, Inc. | Carrier assemblies, planarizing apparatuses including carrier assemblies, and methods for planarizing micro-device workpieces |
US7094695B2 (en) * | 2002-08-21 | 2006-08-22 | Micron Technology, Inc. | Apparatus and method for conditioning a polishing pad used for mechanical and/or chemical-mechanical planarization |
US7004817B2 (en) * | 2002-08-23 | 2006-02-28 | Micron Technology, Inc. | Carrier assemblies, planarizing apparatuses including carrier assemblies, and methods for planarizing micro-device workpieces |
US7011566B2 (en) * | 2002-08-26 | 2006-03-14 | Micron Technology, Inc. | Methods and systems for conditioning planarizing pads used in planarizing substrates |
US6841991B2 (en) * | 2002-08-29 | 2005-01-11 | Micron Technology, Inc. | Planarity diagnostic system, E.G., for microelectronic component test systems |
US7008299B2 (en) * | 2002-08-29 | 2006-03-07 | Micron Technology, Inc. | Apparatus and method for mechanical and/or chemical-mechanical planarization of micro-device workpieces |
US7112270B2 (en) * | 2002-09-16 | 2006-09-26 | Applied Materials, Inc. | Algorithm for real-time process control of electro-polishing |
US20050061674A1 (en) * | 2002-09-16 | 2005-03-24 | Yan Wang | Endpoint compensation in electroprocessing |
US20050040049A1 (en) * | 2002-09-20 | 2005-02-24 | Rimma Volodarsky | Anode assembly for plating and planarizing a conductive layer |
US20040084318A1 (en) * | 2002-11-05 | 2004-05-06 | Uri Cohen | Methods and apparatus for activating openings and for jets plating |
US6796887B2 (en) | 2002-11-13 | 2004-09-28 | Speedfam-Ipec Corporation | Wear ring assembly |
CN1720490B (zh) | 2002-11-15 | 2010-12-08 | 应用材料有限公司 | 用于控制具有多变量输入参数的制造工艺的方法和系统 |
US7442282B2 (en) * | 2002-12-02 | 2008-10-28 | Ebara Corporation | Electrolytic processing apparatus and method |
US6835657B2 (en) | 2002-12-02 | 2004-12-28 | Applied Materials, Inc. | Method for recrystallizing metal in features of a semiconductor chip |
US20040149584A1 (en) * | 2002-12-27 | 2004-08-05 | Mizuki Nagai | Plating method |
US6875322B1 (en) | 2003-01-15 | 2005-04-05 | Lam Research Corporation | Electrochemical assisted CMP |
US7074114B2 (en) | 2003-01-16 | 2006-07-11 | Micron Technology, Inc. | Carrier assemblies, polishing machines including carrier assemblies, and methods for polishing micro-device workpieces |
US7138039B2 (en) * | 2003-01-21 | 2006-11-21 | Applied Materials, Inc. | Liquid isolation of contact rings |
JP2004223665A (ja) * | 2003-01-24 | 2004-08-12 | Sony Corp | 電解研磨装置および研磨方法 |
US7087144B2 (en) * | 2003-01-31 | 2006-08-08 | Applied Materials, Inc. | Contact ring with embedded flexible contacts |
US7025861B2 (en) * | 2003-02-06 | 2006-04-11 | Applied Materials | Contact plating apparatus |
US6884152B2 (en) | 2003-02-11 | 2005-04-26 | Micron Technology, Inc. | Apparatuses and methods for conditioning polishing pads used in polishing micro-device workpieces |
US6872132B2 (en) * | 2003-03-03 | 2005-03-29 | Micron Technology, Inc. | Systems and methods for monitoring characteristics of a polishing pad used in polishing micro-device workpieces |
US7842169B2 (en) * | 2003-03-04 | 2010-11-30 | Applied Materials, Inc. | Method and apparatus for local polishing control |
US6864181B2 (en) * | 2003-03-27 | 2005-03-08 | Lam Research Corporation | Method and apparatus to form a planarized Cu interconnect layer using electroless membrane deposition |
US20070131563A1 (en) * | 2003-04-14 | 2007-06-14 | Asm Nutool, Inc. | Means to improve center to edge uniformity of electrochemical mechanical processing of workpiece surface |
US7025860B2 (en) * | 2003-04-22 | 2006-04-11 | Novellus Systems, Inc. | Method and apparatus for the electrochemical deposition and removal of a material on a workpiece surface |
DE602004018631D1 (de) * | 2003-04-24 | 2009-02-05 | Afshin Ahmadian | En |
US6935929B2 (en) | 2003-04-28 | 2005-08-30 | Micron Technology, Inc. | Polishing machines including under-pads and methods for mechanical and/or chemical-mechanical polishing of microfeature workpieces |
US7131891B2 (en) * | 2003-04-28 | 2006-11-07 | Micron Technology, Inc. | Systems and methods for mechanical and/or chemical-mechanical polishing of microfeature workpieces |
KR20040094560A (ko) * | 2003-05-03 | 2004-11-10 | 삼성전자주식회사 | 반도체 소자 금속배선층의 전해 연마 방법 및 장치 |
JP2004342750A (ja) * | 2003-05-14 | 2004-12-02 | Toshiba Corp | 電子デバイスの製造方法 |
JP2004356117A (ja) * | 2003-05-26 | 2004-12-16 | Ebara Corp | 基板処理方法及びその装置 |
JP2004353061A (ja) * | 2003-05-30 | 2004-12-16 | Ebara Corp | 電解処理方法及び装置 |
US7390429B2 (en) * | 2003-06-06 | 2008-06-24 | Applied Materials, Inc. | Method and composition for electrochemical mechanical polishing processing |
US7223685B2 (en) * | 2003-06-23 | 2007-05-29 | Intel Corporation | Damascene fabrication with electrochemical layer removal |
JP2005029830A (ja) * | 2003-07-10 | 2005-02-03 | Ebara Corp | めっき装置及びめっき方法 |
US20050016861A1 (en) * | 2003-07-24 | 2005-01-27 | Thomas Laursen | Method for planarizing a work piece |
US7763548B2 (en) * | 2003-08-06 | 2010-07-27 | Micron Technology, Inc. | Microfeature workpiece processing system for, e.g., semiconductor wafer analysis |
US7250104B2 (en) * | 2003-08-08 | 2007-07-31 | Novellus Systems, Inc. | Method and system for optically enhanced metal planarization |
US7030603B2 (en) * | 2003-08-21 | 2006-04-18 | Micron Technology, Inc. | Apparatuses and methods for monitoring rotation of a conductive microfeature workpiece |
US6848977B1 (en) | 2003-08-29 | 2005-02-01 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Polishing pad for electrochemical mechanical polishing |
JP4423356B2 (ja) * | 2003-09-02 | 2010-03-03 | 株式会社荏原製作所 | 基板のめっき装置 |
US20050051437A1 (en) * | 2003-09-04 | 2005-03-10 | Keiichi Kurashina | Plating apparatus and plating method |
US7112122B2 (en) * | 2003-09-17 | 2006-09-26 | Micron Technology, Inc. | Methods and apparatus for removing conductive material from a microelectronic substrate |
US20050092620A1 (en) * | 2003-10-01 | 2005-05-05 | Applied Materials, Inc. | Methods and apparatus for polishing a substrate |
US8158532B2 (en) * | 2003-10-20 | 2012-04-17 | Novellus Systems, Inc. | Topography reduction and control by selective accelerator removal |
US8530359B2 (en) | 2003-10-20 | 2013-09-10 | Novellus Systems, Inc. | Modulated metal removal using localized wet etching |
US20050121141A1 (en) * | 2003-11-13 | 2005-06-09 | Manens Antoine P. | Real time process control for a polishing process |
US7064057B2 (en) * | 2003-11-21 | 2006-06-20 | Asm Nutool, Inc. | Method and apparatus for localized material removal by electrochemical polishing |
US7186164B2 (en) * | 2003-12-03 | 2007-03-06 | Applied Materials, Inc. | Processing pad assembly with zone control |
US7479213B2 (en) * | 2003-12-25 | 2009-01-20 | Ebara Corporation | Plating method and plating apparatus |
JP4540981B2 (ja) * | 2003-12-25 | 2010-09-08 | 株式会社荏原製作所 | めっき方法 |
US20050178666A1 (en) * | 2004-01-13 | 2005-08-18 | Applied Materials, Inc. | Methods for fabrication of a polishing article |
US7390744B2 (en) * | 2004-01-29 | 2008-06-24 | Applied Materials, Inc. | Method and composition for polishing a substrate |
US20060021974A1 (en) * | 2004-01-29 | 2006-02-02 | Applied Materials, Inc. | Method and composition for polishing a substrate |
US7153777B2 (en) * | 2004-02-20 | 2006-12-26 | Micron Technology, Inc. | Methods and apparatuses for electrochemical-mechanical polishing |
US7648622B2 (en) * | 2004-02-27 | 2010-01-19 | Novellus Systems, Inc. | System and method for electrochemical mechanical polishing |
US7086927B2 (en) * | 2004-03-09 | 2006-08-08 | Micron Technology, Inc. | Methods and systems for planarizing workpieces, e.g., microelectronic workpieces |
US7125324B2 (en) | 2004-03-09 | 2006-10-24 | 3M Innovative Properties Company | Insulated pad conditioner and method of using same |
US20050218000A1 (en) * | 2004-04-06 | 2005-10-06 | Applied Materials, Inc. | Conditioning of contact leads for metal plating systems |
US7285195B2 (en) * | 2004-06-24 | 2007-10-23 | Applied Materials, Inc. | Electric field reducing thrust plate |
US20060003566A1 (en) * | 2004-06-30 | 2006-01-05 | Ismail Emesh | Methods and apparatuses for semiconductor fabrication utilizing through-wafer interconnects |
US20060030156A1 (en) * | 2004-08-05 | 2006-02-09 | Applied Materials, Inc. | Abrasive conductive polishing article for electrochemical mechanical polishing |
US7066792B2 (en) * | 2004-08-06 | 2006-06-27 | Micron Technology, Inc. | Shaped polishing pads for beveling microfeature workpiece edges, and associate system and methods |
US7033253B2 (en) * | 2004-08-12 | 2006-04-25 | Micron Technology, Inc. | Polishing pad conditioners having abrasives and brush elements, and associated systems and methods |
US20060043534A1 (en) * | 2004-08-26 | 2006-03-02 | Kirby Kyle K | Microfeature dies with porous regions, and associated methods and systems |
US7566391B2 (en) * | 2004-09-01 | 2009-07-28 | Micron Technology, Inc. | Methods and systems for removing materials from microfeature workpieces with organic and/or non-aqueous electrolytic media |
US7084064B2 (en) * | 2004-09-14 | 2006-08-01 | Applied Materials, Inc. | Full sequence metal and barrier layer electrochemical mechanical processing |
US7229907B2 (en) * | 2004-09-15 | 2007-06-12 | Tom Wu | Method of forming a damascene structure with integrated planar dielectric layers |
CN101027431B (zh) * | 2004-09-24 | 2011-04-13 | 揖斐电株式会社 | 电镀方法及电镀装置 |
US20060183321A1 (en) * | 2004-09-27 | 2006-08-17 | Basol Bulent M | Method for reduction of gap fill defects |
WO2006039436A2 (en) * | 2004-10-01 | 2006-04-13 | Applied Materials, Inc. | Pad design for electrochemical mechanical polishing |
US7520968B2 (en) * | 2004-10-05 | 2009-04-21 | Applied Materials, Inc. | Conductive pad design modification for better wafer-pad contact |
US7247558B2 (en) * | 2004-12-03 | 2007-07-24 | Novellus Systems, Inc. | Method and system for electroprocessing conductive layers |
US7655565B2 (en) * | 2005-01-26 | 2010-02-02 | Applied Materials, Inc. | Electroprocessing profile control |
TW200727356A (en) * | 2005-01-28 | 2007-07-16 | Applied Materials Inc | Tungsten electroprocessing |
US20060169674A1 (en) * | 2005-01-28 | 2006-08-03 | Daxin Mao | Method and composition for polishing a substrate |
US20060234499A1 (en) * | 2005-03-29 | 2006-10-19 | Akira Kodera | Substrate processing method and substrate processing apparatus |
US20060219663A1 (en) * | 2005-03-31 | 2006-10-05 | Applied Materials, Inc. | Metal CMP process on one or more polishing stations using slurries with oxidizers |
US7427340B2 (en) * | 2005-04-08 | 2008-09-23 | Applied Materials, Inc. | Conductive pad |
US20060228934A1 (en) * | 2005-04-12 | 2006-10-12 | Basol Bulent M | Conductive materials for low resistance interconnects and methods of forming the same |
US20060249394A1 (en) * | 2005-05-05 | 2006-11-09 | Applied Materials, Inc. | Process and composition for electrochemical mechanical polishing |
US20060249395A1 (en) * | 2005-05-05 | 2006-11-09 | Applied Material, Inc. | Process and composition for electrochemical mechanical polishing |
US20060252254A1 (en) * | 2005-05-06 | 2006-11-09 | Basol Bulent M | Filling deep and wide openings with defect-free conductor |
US20080029400A1 (en) * | 2005-05-13 | 2008-02-07 | Stephen Mazur | Selective electroplating onto recessed surfaces |
US20070014958A1 (en) * | 2005-07-08 | 2007-01-18 | Chaplin Ernest R | Hanger labels, label assemblies and methods for forming the same |
US7264539B2 (en) * | 2005-07-13 | 2007-09-04 | Micron Technology, Inc. | Systems and methods for removing microfeature workpiece surface defects |
US7851222B2 (en) * | 2005-07-26 | 2010-12-14 | Applied Materials, Inc. | System and methods for measuring chemical concentrations of a plating solution |
US7326105B2 (en) | 2005-08-31 | 2008-02-05 | Micron Technology, Inc. | Retaining rings, and associated planarizing apparatuses, and related methods for planarizing micro-device workpieces |
US7438626B2 (en) | 2005-08-31 | 2008-10-21 | Micron Technology, Inc. | Apparatus and method for removing material from microfeature workpieces |
US7294049B2 (en) * | 2005-09-01 | 2007-11-13 | Micron Technology, Inc. | Method and apparatus for removing material from microfeature workpieces |
US7416975B2 (en) | 2005-09-21 | 2008-08-26 | Novellus Systems, Inc. | Method of forming contact layers on substrates |
US20070111523A1 (en) * | 2005-11-17 | 2007-05-17 | Ismail Emesh | Process for conditioning conductive surfaces after electropolishing |
US20070135024A1 (en) * | 2005-12-08 | 2007-06-14 | Itsuki Kobata | Polishing pad and polishing apparatus |
US20070153453A1 (en) * | 2006-01-05 | 2007-07-05 | Applied Materials, Inc. | Fully conductive pad for electrochemical mechanical processing |
US20070170066A1 (en) * | 2006-01-06 | 2007-07-26 | Beaudry Christopher L | Method for planarization during plating |
US7550070B2 (en) * | 2006-02-03 | 2009-06-23 | Novellus Systems, Inc. | Electrode and pad assembly for processing conductive layers |
US20070218587A1 (en) * | 2006-03-07 | 2007-09-20 | Applied Materials, Inc. | Soft conductive polymer processing pad and method for fabricating the same |
US7485561B2 (en) * | 2006-03-29 | 2009-02-03 | Asm Nutool, Inc. | Filling deep features with conductors in semiconductor manufacturing |
US7625814B2 (en) * | 2006-03-29 | 2009-12-01 | Asm Nutool, Inc. | Filling deep features with conductors in semiconductor manufacturing |
US20070235344A1 (en) * | 2006-04-06 | 2007-10-11 | Applied Materials, Inc. | Process for high copper removal rate with good planarization and surface finish |
US20070251832A1 (en) * | 2006-04-27 | 2007-11-01 | Applied Materials, Inc. | Method and apparatus for electrochemical mechanical polishing of cu with higher liner velocity for better surface finish and higher removal rate during clearance |
US20070254485A1 (en) * | 2006-04-28 | 2007-11-01 | Daxin Mao | Abrasive composition for electrochemical mechanical polishing |
US7422982B2 (en) * | 2006-07-07 | 2008-09-09 | Applied Materials, Inc. | Method and apparatus for electroprocessing a substrate with edge profile control |
US8500985B2 (en) * | 2006-07-21 | 2013-08-06 | Novellus Systems, Inc. | Photoresist-free metal deposition |
US7732329B2 (en) * | 2006-08-30 | 2010-06-08 | Ipgrip, Llc | Method and apparatus for workpiece surface modification for selective material deposition |
US7754612B2 (en) * | 2007-03-14 | 2010-07-13 | Micron Technology, Inc. | Methods and apparatuses for removing polysilicon from semiconductor workpieces |
US20080237048A1 (en) * | 2007-03-30 | 2008-10-02 | Ismail Emesh | Method and apparatus for selective electrofilling of through-wafer vias |
US8012000B2 (en) * | 2007-04-02 | 2011-09-06 | Applied Materials, Inc. | Extended pad life for ECMP and barrier removal |
US20080293343A1 (en) * | 2007-05-22 | 2008-11-27 | Yuchun Wang | Pad with shallow cells for electrochemical mechanical processing |
CN100582314C (zh) * | 2007-09-10 | 2010-01-20 | 厦门致力金刚石工具有限公司 | 抛镀机 |
US20090065365A1 (en) * | 2007-09-11 | 2009-03-12 | Asm Nutool, Inc. | Method and apparatus for copper electroplating |
US20090078579A1 (en) * | 2007-09-20 | 2009-03-26 | Weibezahn Karl S | Systems And Methods For Electroplating Embossed Features On Substrates |
WO2009045316A1 (en) * | 2007-10-03 | 2009-04-09 | Sifco Selective Plating | Method of plating metal onto titanium |
CN101435100B (zh) * | 2007-11-16 | 2011-04-06 | 联华电子股份有限公司 | 流体区域控制装置及其操作方法 |
JP2011517734A (ja) * | 2008-04-14 | 2011-06-16 | ヘムロック・セミコンダクター・コーポレーション | 材料を蒸着するための製造装置及び当該装置において使用される電極 |
EP2266369B1 (en) * | 2008-04-14 | 2017-11-22 | Hemlock Semiconductor Operations LLC | Manufacturing apparatus for depositing a material and an electrode for use therein |
RU2494578C2 (ru) * | 2008-04-14 | 2013-09-27 | Хемлок Семикондактор Корпорейшн | Производственная установка для осаждения материала и электрод для использования в ней |
US7884016B2 (en) * | 2009-02-12 | 2011-02-08 | Asm International, N.V. | Liner materials and related processes for 3-D integration |
US8168540B1 (en) | 2009-12-29 | 2012-05-01 | Novellus Systems, Inc. | Methods and apparatus for depositing copper on tungsten |
US9960312B2 (en) | 2010-05-25 | 2018-05-01 | Kurt H. Weiner | Apparatus and methods for fast chemical electrodeposition for fabrication of solar cells |
US8343327B2 (en) | 2010-05-25 | 2013-01-01 | Reel Solar, Inc. | Apparatus and methods for fast chemical electrodeposition for fabrication of solar cells |
US8496511B2 (en) * | 2010-07-15 | 2013-07-30 | 3M Innovative Properties Company | Cathodically-protected pad conditioner and method of use |
US9249521B2 (en) | 2011-11-04 | 2016-02-02 | Integran Technologies Inc. | Flow-through consumable anodes |
CN102744674B (zh) * | 2012-07-26 | 2016-10-26 | 上海华虹宏力半导体制造有限公司 | 化学机械研磨设备 |
US10385471B2 (en) | 2013-03-18 | 2019-08-20 | Spts Technologies Limited | Electrochemical deposition chamber |
GB2512056B (en) | 2013-03-18 | 2018-04-18 | Spts Technologies Ltd | Electrochemical deposition chamber |
CN103938257A (zh) * | 2014-05-08 | 2014-07-23 | 中国科学院宁波材料技术与工程研究所 | 多用途电化学池装置及电镀和分析方法 |
CN104096932B (zh) * | 2014-07-09 | 2016-08-03 | 清华大学深圳研究生院 | 一种电化学微加工电极的制备方法及制备装置 |
US9873180B2 (en) * | 2014-10-17 | 2018-01-23 | Applied Materials, Inc. | CMP pad construction with composite material properties using additive manufacturing processes |
US11745302B2 (en) | 2014-10-17 | 2023-09-05 | Applied Materials, Inc. | Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process |
US10875153B2 (en) | 2014-10-17 | 2020-12-29 | Applied Materials, Inc. | Advanced polishing pad materials and formulations |
WO2016060712A1 (en) | 2014-10-17 | 2016-04-21 | Applied Materials, Inc. | Cmp pad construction with composite material properties using additive manufacturing processes |
US9776361B2 (en) | 2014-10-17 | 2017-10-03 | Applied Materials, Inc. | Polishing articles and integrated system and methods for manufacturing chemical mechanical polishing articles |
US20160230284A1 (en) | 2015-02-10 | 2016-08-11 | Arcanum Alloy Design, Inc. | Methods and systems for slurry coating |
WO2017074773A1 (en) | 2015-10-30 | 2017-05-04 | Applied Materials, Inc. | An apparatus and method of forming a polishing article that has a desired zeta potential |
US10593574B2 (en) | 2015-11-06 | 2020-03-17 | Applied Materials, Inc. | Techniques for combining CMP process tracking data with 3D printed CMP consumables |
TWM522954U (zh) * | 2015-12-03 | 2016-06-01 | 財團法人工業技術研究院 | 電沉積設備 |
KR102687684B1 (ko) * | 2016-01-06 | 2024-07-22 | 어플라이드 머티어리얼스, 인코포레이티드 | 전기화학 증착 동안 작업부재의 피쳐들을 차폐하기 위한 시스템들 및 방법들 |
US10391605B2 (en) | 2016-01-19 | 2019-08-27 | Applied Materials, Inc. | Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process |
WO2017201418A1 (en) | 2016-05-20 | 2017-11-23 | Arcanum Alloys, Inc. | Methods and systems for coating a steel substrate |
US11471999B2 (en) | 2017-07-26 | 2022-10-18 | Applied Materials, Inc. | Integrated abrasive polishing pads and manufacturing methods |
WO2019032286A1 (en) | 2017-08-07 | 2019-02-14 | Applied Materials, Inc. | ABRASIVE DISTRIBUTION POLISHING PADS AND METHODS OF MAKING SAME |
EP3719179A4 (en) * | 2017-11-30 | 2021-01-27 | Mitsubishi Electric Corporation | PLATING DEVICE AND PLATING METHOD |
WO2020050932A1 (en) | 2018-09-04 | 2020-03-12 | Applied Materials, Inc. | Formulations for advanced polishing pads |
JP7183111B2 (ja) * | 2019-05-17 | 2022-12-05 | 株式会社荏原製作所 | めっき方法、めっき用の不溶性アノード、及びめっき装置 |
US20220220628A1 (en) * | 2021-01-13 | 2022-07-14 | Corrdesa, LLC | Electrochemical treatment system |
US11878389B2 (en) | 2021-02-10 | 2024-01-23 | Applied Materials, Inc. | Structures formed using an additive manufacturing process for regenerating surface texture in situ |
CN113579929B (zh) * | 2021-09-26 | 2021-12-10 | 江苏芝麻工具有限公司 | 一种云石机用金属压料板自动加工装置及方法 |
CN114905102A (zh) * | 2022-06-01 | 2022-08-16 | 南京工业职业技术大学 | 一种以多孔材料为载体的微细圆柱电极的电解装置及方法 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3595089A (en) | 1969-09-23 | 1971-07-27 | Frank J Jirik | Rotary grain sampler device |
DE2008664A1 (en) | 1970-02-25 | 1971-09-09 | Licentia Gmbh | Galvanically or chemically assisted mechanic |
US3779887A (en) * | 1972-03-14 | 1973-12-18 | Sifco Ind Inc | Vibratory applicator for electroplating solutions |
US3959089A (en) * | 1972-07-31 | 1976-05-25 | Watts John Dawson | Surface finishing and plating method |
US4610772A (en) | 1985-07-22 | 1986-09-09 | The Carolinch Company | Electrolytic plating apparatus |
US5024735A (en) | 1989-02-15 | 1991-06-18 | Kadija Igor V | Method and apparatus for manufacturing interconnects with fine lines and spacing |
US5171412A (en) | 1991-08-23 | 1992-12-15 | Applied Materials, Inc. | Material deposition method for integrated circuit manufacturing |
JP3200468B2 (ja) | 1992-05-21 | 2001-08-20 | 日本エレクトロプレイテイング・エンジニヤース株式会社 | ウエーハ用めっき装置 |
DE4324330C2 (de) | 1992-08-01 | 1994-11-17 | Atotech Deutschland Gmbh | Verfahren zum elektrolytischen Behandeln von insbesondere flachem Behandlungsgut, sowie Anordnung, insbesondere zur Durchführung dieses Verfahrens |
EP0696495B1 (en) | 1994-08-09 | 1999-10-27 | Ontrak Systems, Inc. | Linear polisher and method for semiconductor wafer planarization |
US5593344A (en) | 1994-10-11 | 1997-01-14 | Ontrak Systems, Inc. | Wafer polishing machine with fluid bearings and drive systems |
US5755859A (en) | 1995-08-24 | 1998-05-26 | International Business Machines Corporation | Cobalt-tin alloys and their applications for devices, chip interconnections and packaging |
CN1072737C (zh) * | 1995-10-17 | 2001-10-10 | 佳能株式会社 | 刻蚀方法 |
RU2077611C1 (ru) * | 1996-03-20 | 1997-04-20 | Виталий Макарович Рябков | Способ обработки поверхностей и устройство для его осуществления |
US5933753A (en) | 1996-12-16 | 1999-08-03 | International Business Machines Corporation | Open-bottomed via liner structure and method for fabricating same |
US5807165A (en) | 1997-03-26 | 1998-09-15 | International Business Machines Corporation | Method of electrochemical mechanical planarization |
US5930669A (en) * | 1997-04-03 | 1999-07-27 | International Business Machines Corporation | Continuous highly conductive metal wiring structures and method for fabricating the same |
JP3462970B2 (ja) * | 1997-04-28 | 2003-11-05 | 三菱電機株式会社 | メッキ処理装置およびメッキ処理方法 |
US5833820A (en) | 1997-06-19 | 1998-11-10 | Advanced Micro Devices, Inc. | Electroplating apparatus |
US6004880A (en) * | 1998-02-20 | 1999-12-21 | Lsi Logic Corporation | Method of single step damascene process for deposition and global planarization |
US6143155A (en) * | 1998-06-11 | 2000-11-07 | Speedfam Ipec Corp. | Method for simultaneous non-contact electrochemical plating and planarizing of semiconductor wafers using a bipiolar electrode assembly |
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1998
- 1998-12-01 US US09/201,929 patent/US6176992B1/en not_active Expired - Lifetime
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WO2000026443A3 (en) | 2000-10-12 |
WO2000026443A2 (en) | 2000-05-11 |
US6176992B1 (en) | 2001-01-23 |
CN1214133C (zh) | 2005-08-10 |
KR100780071B1 (ko) | 2007-11-29 |
US6676822B1 (en) | 2004-01-13 |
AU1461700A (en) | 2000-05-22 |
US20010042690A1 (en) | 2001-11-22 |
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