TW504788B - A probing method for testing with high frequency - Google Patents

Abstract

A probing method for testing with high frequency comprises the step of contacting successively a wafer by a probe card. The probe card has a plurality of sets of probe terminals so as to constitute a probing area. While the probe card probing the wafer. The chips probed by probe terminals is less than the chips within the probe area. Thus, the circuit density of the probe card is reduced for avoiding signal interference and cross-talk.

Description

[Field of the invention] The present invention relates to a kind of adaptability. It relates to a method with a spaced row method to discriminate a wafer on a wafer. [Prior art] A detection method for high-frequency testing, and a special number of detection endpoints The detection side is good or bad. The increase of the clock of the f semiconductor device [clock] and various types of products = price, such as higher than 1 (^ 2 microprocessor, speed exceeds MM.

. Rate 5 memory (double data rate memory, DDR

memory] and semiconductor radio frequency chips and other semiconductor devices. After completing the integrated circuit on the wafer, they need to be tested for electrical properties. The test equipment for testing semiconductor devices usually includes a probe card. ], And the probe card has a plurality of probes [prObe needle] 'to contact the electrode portion [or solder pad] of the semiconductor device, and the signal is transmitted between the test equipment and the semiconductor device via the probe card, In semiconductor devices, problems such as signal interference and cross talk tend to occur.

In U.S. Patent No. 6,262,586 "Detection method of the best detection mode" (its application number is 337603 in the Republic of China) is to provide a detection method to prevent probe damage and offset, such as No. 1 As shown in the figure, the basic structure of the test equipment includes a test machine 34 connected to a test head 32 via a signal line 33. The test head 32 can be equipped with a detection card 31. When the detection card 31 contacts A wafer can transmit electrical data to the test machine 34 through the test head 32 and the signal line 34 to analyze and judge the quality of the wafer on the wafer; as shown in FIG. 2, a plurality of wafers are prepared on a wafer 41 crystal

504788

V. Description of the invention (2) After the film, "the position of the Japanese film is indicated by the X axis [1 ~] and y sleeve [1 ~ 11] ', and the detection card 31 has four sets of detection endpoints [as shown in Figure 2 Right of 1,

2, 3, and 4], which are arranged at an oblique 45 degrees, and can test four wafers at the same time. As shown by the numbers 1 to 9 on the right wafer in Figure 2, it continuously moves the detection card 31 for ten Nine probes. In the first probe 42a, the first set of probing endpoints 1 were the wafers with contact coordinates (2, 6), and the four wafers were electrically tested. In the nineteenth probe 42d, the contacts were repeated. Wafers [ie wafers that are touched by the 2nd to 4th group of detection endpoints] are non-electrical tests to shorten the test time. During each detection process, each group of detection endpoints is in contact with a wafer. The round edge can avoid probe damage and offset, but this conventional detection method still cannot solve the problems of signal interference and crosstalk in high frequency testing. [Objective and Summary of the Invention] The main object of the present invention is to provide a detection method suitable for high-frequency testing. When a detection card contacts a wafer, the number of wafers touched by the detection points of the complex array is less than The number of wafers in the detection area is suitable for high-frequency testing of female brakes. A second object of the present invention is to provide a detection method. When a detection card contacts a wafer, the number of wafers touched by the detection point of the complex array is less than the number of wafers in the detection area, so that the detection card has a larger size. Design_ Flexible and less dense circuit distribution 'to avoid signal interference and crosstalk issues. In order to achieve the above-mentioned object, according to the detection method of the present invention, a wafer is continuously contacted with a detection card, and the detection card has a mismatch with the wafer of the wafer.

Page 5 504788 V. Description of the invention (3)

It is called the detection end point of the group number distribution. The detection end-point area of the complex array is the detection end point of the multilayer ceramic ceramic circuit board on the detection card. It is spaced rows or columns or staggered. The number of chips in the touched area of the tested chip makes the circuit of the probe card suitable for high-frequency testing to avoid signal interference and crosstalk. [Detailed description of the invention] The point system is configured as a probe, where the complex array is used as the probe card The number of contacts is less than the decrease in the distribution density of the probe. Please refer to the attached drawings. The present invention will list the following embodiments: / According to a specific embodiment of the present invention, as shown in FIG. The detection method is constructed in a semiconductor test equipment. The installation of the sun contains a test machine 34, which is connected to a test head 32 by a signal line 33, and a test card 20 can be installed on the test head 32. It is used to electrically contact the 'semiconductor device on a wafer [ie wafer]' during the test. It is a pedestal 10 [pedestal] under the probe card 20, which is used to fixedly support a wafer 1] L. Block 10 can correspond to office Card 20 moves. As shown in FIG. 5, the conventional wafer 11 includes a plurality of wafers, and the number of wafers may vary from tens to thousands depending on the size of the wafer and the wafer. In the illustration of this embodiment, tens of wafers (in X-axis 1 to 8 and y-axis 1 to 8] Simplified representation, the integrated circuit and pads of the wafer are formed on the front side of the wafer i J, as shown in Figure 3, the probe card 2 0 contains The multilayer printed circuit board 21 is bonded to the test head 32. The printed circuit board 21 is fixed with a multilayer ceramic circuit board 22. The lower surface of the multilayer ceramic circuit board 22 (the surface facing the wafer 11) has a complex array. Probe end 2 3 ′ such as bump, vertical needle or cantilever

Page 6 Sexual detection of the wafer touched by the edge array detection endpoint 2 3, as shown in Figure 5, 'in this embodiment' requires eight times of movement and testing, the first time 504788 5. Description of the invention (4) needle], as shown in Figure 4, each group of detection endpoints 23 is distributed in a mirror image with the electrode portion of one of the wafers (ie, pads or bumps), and the endpoints 23 are detected by a complex array A detection area A is formed. The detection area A is smaller than the multilayer ceramic circuit board 22 of the detection card 20 and is used to combine the surface of the detection terminal 23 (as shown in FIG. 3). In this embodiment, the detection area A During the test, it can cover a maximum of twelve wafers, and the detection area A contains eight groups of detection endpoints 23, which are arranged in spaced rows or columns. During the detection process after a movement, the test does not exceed Eight wafers. According to the detection method of the present invention, a wafer 10 to be tested is fixedly supported by a holder 10 of a test device, and then the holder 10 is continuously moved. Each movement is performed by horizontally moving the holder 10 Then it moves up and down to make the probe card 20 contact a part of the wafer 11. When the probe card 20 contacts the wafer 11, the number of wafers touched by the detection point 23 of the complex array is less than that in the detection area A. The number of wafers included in the area, after each movement and positioning, in the electric movement and test, the detection area A covers the range (1, 0 to (3, 4). There are a total of six wafers covered by the detection area A, and The detection endpoints 23 and 3 only contact the corresponding damaged wafers. The wafers τ 1 contacted in the first test are four. In the second movement and test, the detection area A covers (2, 0 (4, 4), a total of nine wafers are covered by the detection area A, and the probe end 23 only touches the corresponding part of the wafer. The second test contact = 2 is six; in = three movements and tests In the detection area a, there is no disk, and the area around 1) to (7,4) has a total of nine A wafer is detected tear region

, / 88 5. Invention Description (5) " " '" " ~ —-

The detection terminal 23 only touches the corresponding part of the chip, and the number T 3 of the third type 7 contacts is six. In the fourth movement and test, the detection area A covers (6, 1) to (8, 4), a total of six wafers are covered by the detection area A, and the detection end point 23 is only in contact with the corresponding wafer '; the wafer T4 contacted by the fourth test is four; The following analogy is performed for the fifth test [wafers in contact with T5], the sixth test, [wafers in contact with T6], the seventh test [wafers in contact with T7], and the eighth The test [the contact wafer is represented by T8] to complete the test of all wafers on the wafer 11. In the above detection method, each wafer on the wafer 11 is only touched once, and there is no repeated contact. Therefore, there is no need for a special test identification program, and because the detection terminal in the detection area A The number of points 23 is smaller than the number of chips covered by the detection area a. Therefore, the detection card 20 has greater design flexibility and can be used to design less dense circuit distributions to avoid signal interference and crosstalk problems, making the detection method of the present invention Special; Do not apply to high frequency testing. In addition to the detection points 2 and 3 of the complex array, in addition to being arranged in spaced rows or columns,

In another embodiment of the present invention, as shown in FIG. 6, the plurality of array detection endpoints 23 in the detection area A i are staggered, so that the number of wafers touched by the plurality of array detection endpoints 23 is less than The number of wafers in the detection area. Therefore, the scope of protection of the present invention is determined by the scope of the appended patent application. 'Any person skilled in the art will make any changes without departing from the spirit and scope of the present invention. And modifications belong to the protection domain of the present invention.

Page 504788 Brief description of the drawings [Illustration of the drawings] Figure 1: In the US Patent No. 6, 262, 58 6 "detection method of the best detection mode", a block diagram of the relative relationship of a detection card; Figure ·· Schematic diagram of the state of the detection area in US Patent No. 6,262, 586 "Detection method of the best detection mode"; Figure 3: Cross-section of wafer test equipment according to a specific embodiment of the present invention Figure 4: A schematic diagram of a detection area of a probe card according to a specific embodiment of the present invention, Figure 5: A schematic diagram of a wafer detected by the probe card according to a specific embodiment of the present invention; and Figure 6 : According to another embodiment of the present invention, a schematic diagram of a detection area of another detection card. 1 The first group of probing endpoints 2 The second group of probing endpoints 3 The third group of probing endpoints 4 The fourth group of probing endpoints 10 Socket 11 Wafer 1, one :: eight Eight probe cards 1 i: ί: , 21 Printed circuit board 22 Multi-layer ceramic circuit board 23 Detection endpoint 丨 31 Probe card 32 Test head 33 Signal line 34 Test machine 41 Wafer 42a First detection 42d Nineteenth detection [Illustration of drawing number]

Page 504788 Simple description of A detection area A1 detection area T1 first test wafer T2 second test wafer T3 third test wafer T4 fourth test wafer T5 fifth test wafer T6 sixth test wafer T7 Seventh test wafer T8 Eighth test wafer

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Claims (1)

MM788 6. Scope of patent application [Scope of patent application] 1. A detection method, which uses a probe card to test a plurality of semiconductor wafers on a wafer. The steps include ... Wafer 'The holder can move corresponding to the probe card; moving the holder continuously, after each movement, the probe card contacts a part of the wafer of the wafer, wherein the probe card has a plurality of array detection endpoints A detection area is formed. The distribution of each set of detection endpoints is mirror-imaged with the electrode portion of a wafer. When the detection card contacts the wafer, the number of wafers touched by the detection points of the complex array is less than that in the detection. The number of wafers in the area; and 'electrically detect the wafers touched by the detection points of the complex array after the mother has moved and positioned. 2. The detection method as described in item 1 of the scope of patent application, wherein the detection end points of the money array of the detection card are sorted at intervals of rows or columns. , ° Method, which consists of complex to combine detection of endpoints. The detection method described in the above, 504788 VI. Patent application scope The detection area formed by the array detection endpoints is smaller than the multilayer ceramic circuit board of the detection card used to combine the surface of the detection endpoints. ϋ Page 12