TW483117B - Memory structure with thin film transistors and the manufacturing method thereof - Google Patents

Memory structure with thin film transistors and the manufacturing method thereof Download PDF

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Publication number
TW483117B
TW483117B TW90105286A TW90105286A TW483117B TW 483117 B TW483117 B TW 483117B TW 90105286 A TW90105286 A TW 90105286A TW 90105286 A TW90105286 A TW 90105286A TW 483117 B TW483117 B TW 483117B
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TW
Taiwan
Prior art keywords
thin film
area
forming
gates
conductor layer
Prior art date
Application number
TW90105286A
Inventor
Shan-Jie Jian
Jian-Li Guo
Original Assignee
United Microelectronics Corp
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Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to TW90105286A priority Critical patent/TW483117B/en
Application granted granted Critical
Publication of TW483117B publication Critical patent/TW483117B/en

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Abstract

A manufacturing method for memory with thin film transistors, which includes the following steps: forming a thin film conductor layer on the substrate with isolation area; after doping the thin film conductor layer at the location to be formed with thin film transistors and adjusting the initializing voltage, forming a thin film dielectric thereon; next, sequentially forming a conductor layer and a capping layer on the substrate and defining them as the gates in the memory cell area and the thin film transistor gates above the isolation area; using the thin film dielectric as the mask for etching and leaving part of the thin film conductor layer; then, forming the gates in the memory cell area and the source/drain area of the thin film transistor gates; defining the remaining thin film conductor layer to form the logic circuit area gates and thin film transistor substrate; then, forming the source/drain area in the logic circuit area; finally, forming a self-aligned silicide layer on the gates in logic circuit area and the source/drain area in logic circuit area, and forming the capacitors in the memory cell area.
TW90105286A 2001-03-07 2001-03-07 Memory structure with thin film transistors and the manufacturing method thereof TW483117B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW90105286A TW483117B (en) 2001-03-07 2001-03-07 Memory structure with thin film transistors and the manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW90105286A TW483117B (en) 2001-03-07 2001-03-07 Memory structure with thin film transistors and the manufacturing method thereof

Publications (1)

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TW483117B true TW483117B (en) 2002-04-11

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TW90105286A TW483117B (en) 2001-03-07 2001-03-07 Memory structure with thin film transistors and the manufacturing method thereof

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TW (1) TW483117B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10211344B2 (en) 2009-10-16 2019-02-19 Semiconductor Energy Laboratory Co., Ltd. Logic circuit and semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10211344B2 (en) 2009-10-16 2019-02-19 Semiconductor Energy Laboratory Co., Ltd. Logic circuit and semiconductor device

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