TW455976B - Endpoint detection method of chemical mechanical polishing process - Google Patents

Endpoint detection method of chemical mechanical polishing process Download PDF

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Publication number
TW455976B
TW455976B TW89116300A TW89116300A TW455976B TW 455976 B TW455976 B TW 455976B TW 89116300 A TW89116300 A TW 89116300A TW 89116300 A TW89116300 A TW 89116300A TW 455976 B TW455976 B TW 455976B
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TW
Taiwan
Prior art keywords
layer
polysilicon
inter
dielectric layer
cmp
Prior art date
Application number
TW89116300A
Inventor
Jen-Fa Lu
Jen-Peng Fan
Ruei-Ping Juang
Tian-Jen Hu
Original Assignee
Taiwan Semiconductor Mfg
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Publication date
Application filed by Taiwan Semiconductor Mfg filed Critical Taiwan Semiconductor Mfg
Priority to TW89116300A priority Critical patent/TW455976B/en
Application granted granted Critical
Publication of TW455976B publication Critical patent/TW455976B/en

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Abstract

The present invention discloses a kind of endpoint detection method for chemical mechanical polishing (CMP) process. The invented method is suitable for use in the integrated circuit process that adopts the self-aligned contact having plural polysilicon layers. After the first polysilicon layer, the first inter-polysilicon dielectric layer, the second polysilicon layer, and the second inter-polysilicon dielectric layer are continually formed on a semiconductor substrate, the third polysilicon layer is formed. After a silicon nitride layer is formed on the third polysilicon layer, an inter-layer dielectric layer is formed and is followed by using the CMP method to perform a planarization treatment onto the inter-layer dielectric layer. The endpoint detection method for CMP process stated above uses a laser light beam to irradiate on the inter-layer dielectric layer and measure the intensity of the reflected light. The key point of the present invention is to find the derivative function through the intensity variations of reflected light versus time, and use the slope of derivative function versus time to establish the endpoint of CMP.
TW89116300A 2000-08-11 2000-08-11 Endpoint detection method of chemical mechanical polishing process TW455976B (en)

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Application Number Priority Date Filing Date Title
TW89116300A TW455976B (en) 2000-08-11 2000-08-11 Endpoint detection method of chemical mechanical polishing process

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Application Number Priority Date Filing Date Title
TW89116300A TW455976B (en) 2000-08-11 2000-08-11 Endpoint detection method of chemical mechanical polishing process

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TW455976B true TW455976B (en) 2001-09-21

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TW89116300A TW455976B (en) 2000-08-11 2000-08-11 Endpoint detection method of chemical mechanical polishing process

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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6640151B1 (en) 1999-12-22 2003-10-28 Applied Materials, Inc. Multi-tool control system, method and medium
US6708074B1 (en) 2000-08-11 2004-03-16 Applied Materials, Inc. Generic interface builder
US7698012B2 (en) 2001-06-19 2010-04-13 Applied Materials, Inc. Dynamic metrology schemes and sampling schemes for advanced process control in semiconductor processing
US7848839B2 (en) 2004-10-08 2010-12-07 Applied Materials, Inc. System, method, and medium for an endpoint detection scheme for copper low-dielectric damascene structures for improved dielectric and copper loss
US7966087B2 (en) 2002-11-15 2011-06-21 Applied Materials, Inc. Method, system and medium for controlling manufacture process having multivariate input parameters
US8005634B2 (en) 2002-03-22 2011-08-23 Applied Materials, Inc. Copper wiring module control
US8070909B2 (en) 2001-06-19 2011-12-06 Applied Materials, Inc. Feedback control of chemical mechanical polishing device providing manipulation of removal rate profiles
US8504620B2 (en) 2000-11-30 2013-08-06 Applied Materials, Inc. Dynamic subject information generation in message services of distributed object systems

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6640151B1 (en) 1999-12-22 2003-10-28 Applied Materials, Inc. Multi-tool control system, method and medium
US6708074B1 (en) 2000-08-11 2004-03-16 Applied Materials, Inc. Generic interface builder
US8504620B2 (en) 2000-11-30 2013-08-06 Applied Materials, Inc. Dynamic subject information generation in message services of distributed object systems
US7698012B2 (en) 2001-06-19 2010-04-13 Applied Materials, Inc. Dynamic metrology schemes and sampling schemes for advanced process control in semiconductor processing
US7783375B2 (en) 2001-06-19 2010-08-24 Applied Materials, Inc. Dynamic metrology schemes and sampling schemes for advanced process control in semiconductor processing
US8070909B2 (en) 2001-06-19 2011-12-06 Applied Materials, Inc. Feedback control of chemical mechanical polishing device providing manipulation of removal rate profiles
US7725208B2 (en) 2001-06-19 2010-05-25 Applied Materials, Inc. Dynamic metrology schemes and sampling schemes for advanced process control in semiconductor processing
US8694145B2 (en) 2001-06-19 2014-04-08 Applied Materials, Inc. Feedback control of a chemical mechanical polishing device providing manipulation of removal rate profiles
US8005634B2 (en) 2002-03-22 2011-08-23 Applied Materials, Inc. Copper wiring module control
US7966087B2 (en) 2002-11-15 2011-06-21 Applied Materials, Inc. Method, system and medium for controlling manufacture process having multivariate input parameters
US7848839B2 (en) 2004-10-08 2010-12-07 Applied Materials, Inc. System, method, and medium for an endpoint detection scheme for copper low-dielectric damascene structures for improved dielectric and copper loss

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