TW374947B - Shallow trench isolation structure and the manufacturing method - Google Patents

Shallow trench isolation structure and the manufacturing method

Info

Publication number
TW374947B
TW374947B TW087108988A TW87108988A TW374947B TW 374947 B TW374947 B TW 374947B TW 087108988 A TW087108988 A TW 087108988A TW 87108988 A TW87108988 A TW 87108988A TW 374947 B TW374947 B TW 374947B
Authority
TW
Taiwan
Prior art keywords
oxide
manufacturing
isolation structure
trench isolation
shallow trench
Prior art date
Application number
TW087108988A
Other languages
Chinese (zh)
Inventor
cui-rong You
Water Lur
Jin-Lai Chen
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to TW087108988A priority Critical patent/TW374947B/en
Priority to JP22164598A priority patent/JP3187375B2/en
Application granted granted Critical
Publication of TW374947B publication Critical patent/TW374947B/en

Links

Landscapes

  • Element Separation (AREA)
  • Formation Of Insulating Films (AREA)
  • Weting (AREA)

Abstract

Method of manufacturing a sort of shallow trench isolation structure, including forming of trench in the substrate before stuffing oxide into the trench and covering the substrate. Then, remove part of the oxide by means of chemical-mechanical grinding and depositing a spin-on glass coating for the oxide. Then, by using back etching, remove the spin-on glass coating and part of this oxide. This method aims to prevent minor scratches or defects on the oxide layer.
TW087108988A 1998-06-06 1998-06-06 Shallow trench isolation structure and the manufacturing method TW374947B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW087108988A TW374947B (en) 1998-06-06 1998-06-06 Shallow trench isolation structure and the manufacturing method
JP22164598A JP3187375B2 (en) 1998-06-06 1998-08-05 Method of manufacturing a shallow trench isolation structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW087108988A TW374947B (en) 1998-06-06 1998-06-06 Shallow trench isolation structure and the manufacturing method

Publications (1)

Publication Number Publication Date
TW374947B true TW374947B (en) 1999-11-21

Family

ID=21630306

Family Applications (1)

Application Number Title Priority Date Filing Date
TW087108988A TW374947B (en) 1998-06-06 1998-06-06 Shallow trench isolation structure and the manufacturing method

Country Status (2)

Country Link
JP (1) JP3187375B2 (en)
TW (1) TW374947B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7327009B2 (en) 2004-10-21 2008-02-05 Taiwan Semiconductor Manufacturing Co., Ltd. Selective nitride liner formation for shallow trench isolation

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100611122B1 (en) * 2000-01-24 2006-08-09 삼성전자주식회사 Method for removing scratch and method for forming pattern in a semiconductor device using the removing method
JP3492279B2 (en) * 2000-03-21 2004-02-03 Ｎｅｃエレクトロニクス株式会社 Method of forming element isolation region
KR20030054672A (en) * 2001-12-26 2003-07-02 주식회사 하이닉스반도체 Method for manufacturing a semiconductor device
KR20030080311A (en) * 2002-04-08 2003-10-17 아남반도체 주식회사 Method for protecting scratch defect of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7327009B2 (en) 2004-10-21 2008-02-05 Taiwan Semiconductor Manufacturing Co., Ltd. Selective nitride liner formation for shallow trench isolation

Also Published As

Publication number Publication date
JP2000012679A (en) 2000-01-14
JP3187375B2 (en) 2001-07-11

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