TW357358B - Dram architecture with aligned data storage and bond pads - Google Patents
Dram architecture with aligned data storage and bond padsInfo
- Publication number
- TW357358B TW357358B TW086109927A TW86109927A TW357358B TW 357358 B TW357358 B TW 357358B TW 086109927 A TW086109927 A TW 086109927A TW 86109927 A TW86109927 A TW 86109927A TW 357358 B TW357358 B TW 357358B
- Authority
- TW
- Taiwan
- Prior art keywords
- bond pad
- bond pads
- data
- array
- lines
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1072—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers for memories with random access ports synchronised on clock signal pulse trains, e.g. synchronous memories, self timed memories
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US2156596P | 1996-07-11 | 1996-07-11 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW357358B true TW357358B (en) | 1999-05-01 |
Family
ID=21804930
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW086109927A TW357358B (en) | 1996-07-11 | 1997-11-11 | Dram architecture with aligned data storage and bond pads |
Country Status (6)
Country | Link |
---|---|
US (1) | US5995404A (zh) |
EP (1) | EP0818787A3 (zh) |
JP (1) | JPH10134564A (zh) |
KR (1) | KR100499844B1 (zh) |
SG (1) | SG74595A1 (zh) |
TW (1) | TW357358B (zh) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5966343A (en) * | 1997-01-02 | 1999-10-12 | Texas Instruments Incorporated | Variable latency memory circuit |
GB2348317B (en) * | 1998-06-23 | 2001-03-07 | Samsung Electronics Co Ltd | An arrangement of data input/output circuits for use in a semiconductor memory device |
JP2000182370A (ja) * | 1998-12-16 | 2000-06-30 | Toshiba Corp | 半導体記憶装置 |
KR100327330B1 (ko) * | 1998-12-17 | 2002-05-09 | 윤종용 | 램버스디램반도체장치 |
JP3557114B2 (ja) | 1998-12-22 | 2004-08-25 | 株式会社東芝 | 半導体記憶装置 |
US6457094B2 (en) | 1999-01-22 | 2002-09-24 | Winbond Electronics Corporation | Memory array architecture supporting block write operation |
US6157560A (en) * | 1999-01-25 | 2000-12-05 | Winbond Electronics Corporation | Memory array datapath architecture |
KR100408716B1 (ko) * | 2001-06-29 | 2003-12-11 | 주식회사 하이닉스반도체 | 오토프리챠지 갭리스 보호회로를 가진 반도체 메모리소자의 오토프리챠지장치 |
JP3990125B2 (ja) | 2001-08-29 | 2007-10-10 | 株式会社東芝 | 半導体メモリチップおよび半導体メモリ |
DE10223726A1 (de) | 2002-05-28 | 2003-12-24 | Infineon Technologies Ag | Integrierter Speicher in Prefetch-Architektur und Verfahren zum Betrieb eines integrierten Speichers |
JP4267006B2 (ja) * | 2006-07-24 | 2009-05-27 | エルピーダメモリ株式会社 | 半導体記憶装置 |
JP2009009633A (ja) * | 2007-06-27 | 2009-01-15 | Elpida Memory Inc | 半導体記憶装置 |
JP5419431B2 (ja) | 2008-11-28 | 2014-02-19 | ルネサスエレクトロニクス株式会社 | 半導体記憶装置 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3832328A1 (de) * | 1988-09-23 | 1990-03-29 | Broadcast Television Syst | Speicheranordnung fuer digitale signale |
US5315130A (en) * | 1990-03-30 | 1994-05-24 | Tactical Fabs, Inc. | Very high density wafer scale device architecture |
EP0544247A3 (en) * | 1991-11-27 | 1993-10-20 | Texas Instruments Inc | Memory architecture |
US5550394A (en) * | 1993-06-18 | 1996-08-27 | Texas Instruments Incorporated | Semiconductor memory device and defective memory cell correction circuit |
US5373470A (en) * | 1993-03-26 | 1994-12-13 | United Memories, Inc. | Method and circuit for configuring I/O devices |
JPH0785655A (ja) * | 1993-09-16 | 1995-03-31 | Mitsubishi Electric Corp | 半導体記憶装置 |
WO1995016266A1 (en) * | 1993-12-07 | 1995-06-15 | Texas Instruments Italia Spa | Improvements in or relating to field memories |
KR0154601B1 (ko) * | 1994-05-20 | 1998-12-01 | 기다오까 다까시 | 반도체 메모리 장치에서 전원공급 패드의 배열 |
JP3421441B2 (ja) * | 1994-09-22 | 2003-06-30 | 東芝マイクロエレクトロニクス株式会社 | ダイナミック型メモリ |
JP3160480B2 (ja) * | 1994-11-10 | 2001-04-25 | 株式会社東芝 | 半導体記憶装置 |
JP3486723B2 (ja) * | 1995-08-29 | 2004-01-13 | 日本テキサス・インスツルメンツ株式会社 | 半導体メモリ装置 |
US5724281A (en) * | 1996-01-31 | 1998-03-03 | Kabushiki Kaisha Toshiba | Semiconductor integrated circuit having improved wiring in input terminal |
US5802005A (en) * | 1996-09-23 | 1998-09-01 | Texas Instruments Incorporated | Four bit pre-fetch sDRAM column select architecture |
-
1997
- 1997-07-11 KR KR1019970032304A patent/KR100499844B1/ko not_active IP Right Cessation
- 1997-07-11 SG SG1997002443A patent/SG74595A1/en unknown
- 1997-07-11 JP JP9186995A patent/JPH10134564A/ja active Pending
- 1997-07-11 US US08/891,536 patent/US5995404A/en not_active Expired - Lifetime
- 1997-07-11 EP EP97305164A patent/EP0818787A3/en not_active Withdrawn
- 1997-11-11 TW TW086109927A patent/TW357358B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR980012545A (ko) | 1998-04-30 |
KR100499844B1 (ko) | 2006-04-21 |
JPH10134564A (ja) | 1998-05-22 |
EP0818787A3 (en) | 1999-08-25 |
US5995404A (en) | 1999-11-30 |
EP0818787A2 (en) | 1998-01-14 |
SG74595A1 (en) | 2000-08-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |