TW331051B - An improved structure of high side-switch charge-pum circuit - Google Patents

An improved structure of high side-switch charge-pum circuit

Info

Publication number
TW331051B
TW331051B TW085104206A TW85104206A TW331051B TW 331051 B TW331051 B TW 331051B TW 085104206 A TW085104206 A TW 085104206A TW 85104206 A TW85104206 A TW 85104206A TW 331051 B TW331051 B TW 331051B
Authority
TW
Taiwan
Prior art keywords
terminal
aforementioned
power
circuit
mos gate
Prior art date
Application number
TW085104206A
Other languages
Chinese (zh)
Inventor
C Nadd Bruno
Original Assignee
Int Rectifier Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Int Rectifier Corp filed Critical Int Rectifier Corp
Priority to TW085104206A priority Critical patent/TW331051B/en
Application granted granted Critical
Publication of TW331051B publication Critical patent/TW331051B/en

Links

Abstract

A high side-switch circuit had features including: 1) the first and second power electrodes and a MOS gate-controlled semiconductor device to control electrodes; 2)the first and second terminal and a charge pump circuit having an output terminal; 3) a constant cruuent source circuit having input and output terminals; 4)the first power electrode connected with aforementioned MOS gate-controlled semiconductor device, and a Vcc input voltage terminal connected with a power source; 5)the second power electrode connected with aforementioned MOS gate-controlled semiconductor device, and a load terminal connected with a ground load; when MOS gate-controlled semiconductor is closed, the ground load is charged by aforementioned source power; 6) a ground terminal connected with a gruond load; 7) an aforementioned charge pump could operate to generate an output voltage higher than aforementioned Vcc output voltage at output terminal; 8) the first power terminal of aforementioned charge pump circuit is connect with Vcc output terminal; 9)the second power terminal of charge pump circuit connected is connected with the output terminal of aforementioned constant current circuit; 10) the output terminal of constant current circuit is connected with aforementioned ground terminal, and has floating voltage at the second power terminal; 11) the output terminal of aforementioned charge pump is connected with the control electrode of aforementioned MOS gate-controlled semiconductor device to provide a voltage higher than the voltage of the second terminal; the voltage is high enough to open the MOS gate-conyrolled semiconductor device.
TW085104206A 1996-04-10 1996-04-10 An improved structure of high side-switch charge-pum circuit TW331051B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW085104206A TW331051B (en) 1996-04-10 1996-04-10 An improved structure of high side-switch charge-pum circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW085104206A TW331051B (en) 1996-04-10 1996-04-10 An improved structure of high side-switch charge-pum circuit

Publications (1)

Publication Number Publication Date
TW331051B true TW331051B (en) 1998-05-01

Family

ID=58262679

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085104206A TW331051B (en) 1996-04-10 1996-04-10 An improved structure of high side-switch charge-pum circuit

Country Status (1)

Country Link
TW (1) TW331051B (en)

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