TW331051B - An improved structure of high side-switch charge-pum circuit - Google Patents
An improved structure of high side-switch charge-pum circuitInfo
- Publication number
- TW331051B TW331051B TW085104206A TW85104206A TW331051B TW 331051 B TW331051 B TW 331051B TW 085104206 A TW085104206 A TW 085104206A TW 85104206 A TW85104206 A TW 85104206A TW 331051 B TW331051 B TW 331051B
- Authority
- TW
- Taiwan
- Prior art keywords
- terminal
- aforementioned
- power
- circuit
- mos gate
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 abstract 6
Abstract
A high side-switch circuit had features including: 1) the first and second power electrodes and a MOS gate-controlled semiconductor device to control electrodes; 2)the first and second terminal and a charge pump circuit having an output terminal; 3) a constant cruuent source circuit having input and output terminals; 4)the first power electrode connected with aforementioned MOS gate-controlled semiconductor device, and a Vcc input voltage terminal connected with a power source; 5)the second power electrode connected with aforementioned MOS gate-controlled semiconductor device, and a load terminal connected with a ground load; when MOS gate-controlled semiconductor is closed, the ground load is charged by aforementioned source power; 6) a ground terminal connected with a gruond load; 7) an aforementioned charge pump could operate to generate an output voltage higher than aforementioned Vcc output voltage at output terminal; 8) the first power terminal of aforementioned charge pump circuit is connect with Vcc output terminal; 9)the second power terminal of charge pump circuit connected is connected with the output terminal of aforementioned constant current circuit; 10) the output terminal of constant current circuit is connected with aforementioned ground terminal, and has floating voltage at the second power terminal; 11) the output terminal of aforementioned charge pump is connected with the control electrode of aforementioned MOS gate-controlled semiconductor device to provide a voltage higher than the voltage of the second terminal; the voltage is high enough to open the MOS gate-conyrolled semiconductor device.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW085104206A TW331051B (en) | 1996-04-10 | 1996-04-10 | An improved structure of high side-switch charge-pum circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW085104206A TW331051B (en) | 1996-04-10 | 1996-04-10 | An improved structure of high side-switch charge-pum circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
TW331051B true TW331051B (en) | 1998-05-01 |
Family
ID=58262679
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW085104206A TW331051B (en) | 1996-04-10 | 1996-04-10 | An improved structure of high side-switch charge-pum circuit |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW331051B (en) |
-
1996
- 1996-04-10 TW TW085104206A patent/TW331051B/en active
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS55156427A (en) | Bootstrap buffer circuit | |
JPH0265625A (en) | Electronic circuit protected from inversion of polarity of power source battery | |
JPH027713A (en) | Gate control circuit for power mos transistor | |
TW331051B (en) | An improved structure of high side-switch charge-pum circuit | |
KR910001775A (en) | Semiconductor memory | |
JPS592438A (en) | Dynamic logical circuit | |
JPH02280413A (en) | Basic logic circuit | |
JPS54156458A (en) | Capacitor charging circuit | |
JPS6264121A (en) | Field effect transistor circuit | |
JPS62109114A (en) | Voltage regulator | |
JPS62217718A (en) | Field effect transistor logic circuit | |
TW357362B (en) | Circuit arrangement to generate a high output-voltage | |
JPS6477155A (en) | Semiconductor integrated circuit device | |
JPS58131771A (en) | Electrostatic induction type semiconductor switching device | |
JPH02246741A (en) | Power switching circuit | |
JPH043618A (en) | Input buffer circuit | |
SU1265916A1 (en) | Device for charging storage battery | |
JPH04241511A (en) | Power mos switch | |
JPH02122724A (en) | Level conversion circuit | |
JPS5781621A (en) | Current source | |
JPS5979636A (en) | Driving circuit of capacitive load | |
JPS57152593A (en) | Insulated gate type storing circuit | |
JPH02128519A (en) | Output circuit | |
JPH0334623A (en) | Semiconductor device | |
JPH04156226A (en) | Inverse connection preventing switching circuit |