TW275134B - - Google Patents
Info
- Publication number
- TW275134B TW275134B TW084110084A TW84110084A TW275134B TW 275134 B TW275134 B TW 275134B TW 084110084 A TW084110084 A TW 084110084A TW 84110084 A TW84110084 A TW 84110084A TW 275134 B TW275134 B TW 275134B
- Authority
- TW
- Taiwan
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/36—Unipolar devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/113—Isolations within a component, i.e. internal isolations
- H10D62/115—Dielectric isolations, e.g. air gaps
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/01—Manufacture or treatment
- H10D10/021—Manufacture or treatment of heterojunction BJTs [HBT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/80—Heterojunction BJTs
- H10D10/821—Vertical heterojunction BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/137—Collector regions of BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/072—Heterojunctions
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/287,741 US5445976A (en) | 1994-08-09 | 1994-08-09 | Method for producing bipolar transistor having reduced base-collector capacitance |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW275134B true TW275134B (enEXAMPLES) | 1996-05-01 |
Family
ID=23104139
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW084110084A TW275134B (enEXAMPLES) | 1994-08-09 | 1995-09-27 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US5445976A (enEXAMPLES) |
| EP (1) | EP0703607B1 (enEXAMPLES) |
| JP (1) | JPH0864610A (enEXAMPLES) |
| KR (1) | KR100379208B1 (enEXAMPLES) |
| DE (1) | DE69524516T2 (enEXAMPLES) |
| TW (1) | TW275134B (enEXAMPLES) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5298438A (en) * | 1992-08-31 | 1994-03-29 | Texas Instruments Incorporated | Method of reducing extrinsic base-collector capacitance in bipolar transistors |
| US5700701A (en) * | 1992-10-30 | 1997-12-23 | Texas Instruments Incorporated | Method for reducing junction capacitance and increasing current gain in collector-up bipolar transistors |
| US5702958A (en) * | 1994-08-09 | 1997-12-30 | Texas Instruments Incorporated | Method for the fabrication of bipolar transistors |
| US5485025A (en) * | 1994-12-02 | 1996-01-16 | Texas Instruments Incorporated | Depleted extrinsic emitter of collector-up heterojunction bipolar transistor |
| US5665614A (en) * | 1995-06-06 | 1997-09-09 | Hughes Electronics | Method for making fully self-aligned submicron heterojunction bipolar transistor |
| US5625206A (en) * | 1996-06-03 | 1997-04-29 | Lucent Technologies Inc. | High-speed double-heterostructure bipolar transistor devices |
| US5859447A (en) * | 1997-05-09 | 1999-01-12 | Yang; Edward S. | Heterojunction bipolar transistor having heterostructure ballasting emitter |
| US6060402A (en) * | 1998-07-23 | 2000-05-09 | The Whitaker Corporation | Process for selective recess etching of epitaxial field effect transistors with a novel etch-stop layer |
| DE19834491A1 (de) * | 1998-07-31 | 2000-02-03 | Daimler Chrysler Ag | Anordnung und Verfahren zur Herstellung eines Heterobipolartransistors |
| JP3509682B2 (ja) * | 2000-01-31 | 2004-03-22 | シャープ株式会社 | ヘテロ接合バイポーラトランジスタおよびその製造方法、並びに、通信装置 |
| US6744078B2 (en) * | 2001-07-04 | 2004-06-01 | Sumitomo Chemical Company, Limited | Heterojunction structure with a charge compensation layer formed between two group III-V semiconductor layers |
| JP3507828B2 (ja) | 2001-09-11 | 2004-03-15 | シャープ株式会社 | ヘテロ接合バイポーラトランジスタ及びその製造方法 |
| JP2004327904A (ja) * | 2003-04-28 | 2004-11-18 | Renesas Technology Corp | バイポーラトランジスタおよびその製造方法 |
| CN102017130A (zh) * | 2008-02-28 | 2011-04-13 | Nxp股份有限公司 | 半导体器件及其制造方法 |
| US9105488B2 (en) | 2010-11-04 | 2015-08-11 | Skyworks Solutions, Inc. | Devices and methodologies related to structures having HBT and FET |
| US9679869B2 (en) | 2011-09-02 | 2017-06-13 | Skyworks Solutions, Inc. | Transmission line for high performance radio frequency applications |
| US9059138B2 (en) | 2012-01-25 | 2015-06-16 | International Business Machines Corporation | Heterojunction bipolar transistor with reduced sub-collector length, method of manufacture and design structure |
| CN103597742A (zh) | 2012-06-14 | 2014-02-19 | 西凯渥资讯处理科技公司 | 包含相关系统、装置及方法的功率放大器模块 |
| US11355586B2 (en) * | 2020-10-22 | 2022-06-07 | Walter Tony WOHLMUTH | Heterojuction bipolar transistor |
| US11728380B2 (en) | 2021-06-24 | 2023-08-15 | Globalfoundries U.S. Inc. | Bipolar transistor with base horizontally displaced from collector |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0558100B1 (en) * | 1986-04-01 | 1996-12-04 | Matsushita Electric Industrial Co., Ltd. | Bipolar transistor |
| JPH01238161A (ja) * | 1988-03-18 | 1989-09-22 | Fujitsu Ltd | 半導体装置及びその製造方法 |
| JP2574862B2 (ja) * | 1988-04-15 | 1997-01-22 | 富士通株式会社 | ホットエレクトロントランジスタ及びその製造方法 |
| CA1318418C (en) * | 1988-09-28 | 1993-05-25 | Richard Norman Nottenburg | Heterostructure bipolar transistor |
| JPH02159036A (ja) * | 1988-12-13 | 1990-06-19 | Matsushita Electric Ind Co Ltd | バイポーラトランジスタの製造方法 |
| JPH02235341A (ja) * | 1989-03-08 | 1990-09-18 | Matsushita Electric Ind Co Ltd | ヘテロ接合バイポーラトランジスタ |
| JP2808145B2 (ja) * | 1989-08-24 | 1998-10-08 | 富士通株式会社 | 半導体装置 |
| JPH03108339A (ja) * | 1989-09-22 | 1991-05-08 | Hitachi Ltd | ヘテロ接合バイポーラトランジスタおよびその製造方法 |
| JPH03291942A (ja) * | 1990-04-09 | 1991-12-24 | Fujitsu Ltd | ヘテロ接合半導体装置の製造方法 |
| JPH0414831A (ja) * | 1990-05-08 | 1992-01-20 | Sony Corp | 配線形成方法 |
| US5118382A (en) * | 1990-08-10 | 1992-06-02 | Ibm Corporation | Elimination of etch stop undercut |
| EP0478923B1 (en) * | 1990-08-31 | 1997-11-05 | Texas Instruments Incorporated | Method of fabricating self-aligned heterojunction bipolar transistors |
| US5270223A (en) * | 1991-06-28 | 1993-12-14 | Texas Instruments Incorporated | Multiple layer wide bandgap collector structure for bipolar transistors |
| US5298438A (en) * | 1992-08-31 | 1994-03-29 | Texas Instruments Incorporated | Method of reducing extrinsic base-collector capacitance in bipolar transistors |
-
1994
- 1994-08-09 US US08/287,741 patent/US5445976A/en not_active Expired - Lifetime
-
1995
- 1995-08-05 KR KR1019950024226A patent/KR100379208B1/ko not_active Expired - Fee Related
- 1995-08-08 JP JP7202602A patent/JPH0864610A/ja active Pending
- 1995-08-09 EP EP95305566A patent/EP0703607B1/en not_active Expired - Lifetime
- 1995-08-09 DE DE69524516T patent/DE69524516T2/de not_active Expired - Lifetime
- 1995-09-27 TW TW084110084A patent/TW275134B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| EP0703607B1 (en) | 2001-12-12 |
| DE69524516T2 (de) | 2002-07-04 |
| KR100379208B1 (ko) | 2003-07-18 |
| US5445976A (en) | 1995-08-29 |
| EP0703607A2 (en) | 1996-03-27 |
| EP0703607A3 (enEXAMPLES) | 1996-04-24 |
| KR960009213A (ko) | 1996-03-22 |
| JPH0864610A (ja) | 1996-03-08 |
| DE69524516D1 (de) | 2002-01-24 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |