TW270233B - - Google Patents
Info
- Publication number
- TW270233B TW270233B TW084104516A TW84104516A TW270233B TW 270233 B TW270233 B TW 270233B TW 084104516 A TW084104516 A TW 084104516A TW 84104516 A TW84104516 A TW 84104516A TW 270233 B TW270233 B TW 270233B
- Authority
- TW
- Taiwan
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
- H01L29/4925—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement
- H01L29/4933—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement with a silicide layer contacting the silicon layer, e.g. Polycide gate
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6046674A JPH07263674A (en) | 1994-03-17 | 1994-03-17 | Field effect semiconductor device and its manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW270233B true TW270233B (en) | 1996-02-11 |
Family
ID=12753928
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW084104516A TW270233B (en) | 1994-03-17 | 1995-05-06 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPH07263674A (en) |
| KR (1) | KR0185461B1 (en) |
| TW (1) | TW270233B (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5958508A (en) * | 1997-03-31 | 1999-09-28 | Motorlola, Inc. | Process for forming a semiconductor device |
| JPH10308454A (en) * | 1997-05-02 | 1998-11-17 | Mitsubishi Electric Corp | Semiconductor device and manufacture of the same |
| US6284636B1 (en) * | 2000-01-21 | 2001-09-04 | Advanced Micro Devices, Inc. | Tungsten gate method and apparatus |
| US6274472B1 (en) | 2000-01-21 | 2001-08-14 | Advanced Micro Devices, Inc. | Tungsten interconnect method |
| US6277744B1 (en) | 2000-01-21 | 2001-08-21 | Advanced Micro Devices, Inc. | Two-level silane nucleation for blanket tungsten deposition |
| KR100745604B1 (en) * | 2006-07-03 | 2007-08-02 | 삼성전자주식회사 | Semiconductor device and method of forming the same |
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1994
- 1994-03-17 JP JP6046674A patent/JPH07263674A/en not_active Withdrawn
-
1995
- 1995-03-11 KR KR1019950005041A patent/KR0185461B1/en not_active IP Right Cessation
- 1995-05-06 TW TW084104516A patent/TW270233B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| KR0185461B1 (en) | 1999-03-20 |
| JPH07263674A (en) | 1995-10-13 |
| KR950028175A (en) | 1995-10-18 |