TW237550B - - Google Patents
Info
- Publication number
- TW237550B TW237550B TW082105317A TW82105317A TW237550B TW 237550 B TW237550 B TW 237550B TW 082105317 A TW082105317 A TW 082105317A TW 82105317 A TW82105317 A TW 82105317A TW 237550 B TW237550 B TW 237550B
- Authority
- TW
- Taiwan
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/351—Sputtering by application of a magnetic field, e.g. magnetron sputtering using a magnetic field in close vicinity to the substrate
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3163—Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Thin Magnetic Films (AREA)
- Plasma Technology (AREA)
- Magnetic Heads (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/911,457 US5290416A (en) | 1992-07-10 | 1992-07-10 | Unidirectional field generator |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW237550B true TW237550B (US07224749-20070529-P00002.png) | 1995-01-01 |
Family
ID=25430264
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW082105317A TW237550B (US07224749-20070529-P00002.png) | 1992-07-10 | 1993-07-03 |
Country Status (6)
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5804041A (en) * | 1996-06-10 | 1998-09-08 | Sony Corporation | Method and apparatus for forming a magnetically oriented thin film |
| US6545580B2 (en) | 1998-09-09 | 2003-04-08 | Veeco Instruments, Inc. | Electromagnetic field generator and method of operation |
| FR2838020B1 (fr) * | 2002-03-28 | 2004-07-02 | Centre Nat Rech Scient | Dispositif de confinement de plasma |
| US7750522B2 (en) * | 2006-07-18 | 2010-07-06 | Danotek Motion Technologies | Slow-speed direct-drive generator |
| US11488814B2 (en) * | 2018-10-29 | 2022-11-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Permeance magnetic assembly |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4963524A (en) * | 1987-09-24 | 1990-10-16 | Semiconductor Energy Laboratory Co., Ltd. | Sputtering device for manufacturing superconducting oxide material and method therefor |
| JPH0649937B2 (ja) * | 1987-12-17 | 1994-06-29 | 株式会社日立製作所 | 磁性膜形成装置 |
| JPH0814021B2 (ja) * | 1989-07-20 | 1996-02-14 | 松下電器産業株式会社 | スパッタ装置 |
| US5045166A (en) * | 1990-05-21 | 1991-09-03 | Mcnc | Magnetron method and apparatus for producing high density ionic gas discharge |
-
1992
- 1992-07-10 US US07/911,457 patent/US5290416A/en not_active Expired - Lifetime
-
1993
- 1993-07-03 TW TW082105317A patent/TW237550B/zh active
- 1993-07-07 KR KR1019930012760A patent/KR940002873A/ko not_active Application Discontinuation
- 1993-07-08 EP EP93110930A patent/EP0579114A1/en not_active Withdrawn
- 1993-07-09 CN CN93108156A patent/CN1083870A/zh active Pending
- 1993-07-09 JP JP5170377A patent/JPH06224065A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| EP0579114A1 (en) | 1994-01-19 |
| KR940002873A (ko) | 1994-02-19 |
| JPH06224065A (ja) | 1994-08-12 |
| US5290416A (en) | 1994-03-01 |
| CN1083870A (zh) | 1994-03-16 |
