TW219997B - - Google Patents

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Publication number
TW219997B
TW219997B TW81108104A TW81108104A TW219997B TW 219997 B TW219997 B TW 219997B TW 81108104 A TW81108104 A TW 81108104A TW 81108104 A TW81108104 A TW 81108104A TW 219997 B TW219997 B TW 219997B
Authority
TW
Taiwan
Application number
TW81108104A
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to KR1019910021694A priority Critical patent/KR930011000A/en
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Application granted granted Critical
Publication of TW219997B publication Critical patent/TW219997B/zh

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/30Power supply circuits
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/08Address circuits; Decoders; Word-line control circuits
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/10Programming or data input circuits
    • G11C16/12Programming voltage switching circuits
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/26Sensing or reading circuits; Data output circuits
TW81108104A 1991-11-29 1992-10-13 TW219997B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019910021694A KR930011000A (en) 1991-11-29 This device pirom

Publications (1)

Publication Number Publication Date
TW219997B true TW219997B (en) 1994-02-01

Family

ID=19323843

Family Applications (1)

Application Number Title Priority Date Filing Date
TW81108104A TW219997B (en) 1991-11-29 1992-10-13

Country Status (5)

Country Link
JP (1) JPH05225791A (en)
DE (1) DE4237002A1 (en)
FR (1) FR2684480A1 (en)
GB (1) GB2261971A (en)
TW (1) TW219997B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5396459A (en) * 1992-02-24 1995-03-07 Sony Corporation Single transistor flash electrically programmable memory cell in which a negative voltage is applied to the nonselected word line
US5581502A (en) * 1995-05-02 1996-12-03 Advanced Micro Devices, Inc. Method for reading a non-volatile memory array

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5729862B2 (en) * 1979-07-26 1982-06-25
US4451905A (en) * 1981-12-28 1984-05-29 Hughes Aircraft Company Electrically erasable programmable read-only memory cell having a single transistor
JPS6226697A (en) * 1985-07-26 1987-02-04 Hitachi Ltd Semiconductor memory
FR2599176A1 (en) * 1986-05-23 1987-11-27 Eurotechnique Sa EPROM
DE3689475T2 (en) * 1986-06-27 1994-04-28 Nec Corp Semiconductor memory system.
JPH0777078B2 (en) * 1987-01-31 1995-08-16 東芝マイクロエレクトロニクス株式会社 Non-volatile semiconductor memory
JPH0772996B2 (en) * 1987-01-31 1995-08-02 東芝マイクロエレクトロニクス株式会社 Non-volatile semiconductor memory
JP2507576B2 (en) * 1988-12-28 1996-06-12 株式会社東芝 Semiconductor non-volatile memory
EP0403822B1 (en) * 1989-06-19 1994-10-12 Texas Instruments Incorporated Circuit and method for conditioning erased eeproms prior to programming
US5222040A (en) * 1990-12-11 1993-06-22 Nexcom Technology, Inc. Single transistor eeprom memory cell
US5197027A (en) * 1991-01-24 1993-03-23 Nexcom Technology, Inc. Single transistor eeprom architecture

Also Published As

Publication number Publication date
FR2684480A1 (en) 1993-06-04
GB9224833D0 (en) 1993-01-13
DE4237002A1 (en) 1993-06-03
JPH05225791A (en) 1993-09-03
GB2261971A (en) 1993-06-02

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