TW202520374A - 蝕刻方法及電漿處理裝置 - Google Patents

蝕刻方法及電漿處理裝置 Download PDF

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Publication number
TW202520374A
TW202520374A TW113127069A TW113127069A TW202520374A TW 202520374 A TW202520374 A TW 202520374A TW 113127069 A TW113127069 A TW 113127069A TW 113127069 A TW113127069 A TW 113127069A TW 202520374 A TW202520374 A TW 202520374A
Authority
TW
Taiwan
Prior art keywords
region
substrate
etching method
gas
etching
Prior art date
Application number
TW113127069A
Other languages
English (en)
Chinese (zh)
Inventor
勝沼隆幸
Original Assignee
日商東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW202520374A publication Critical patent/TW202520374A/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
TW113127069A 2023-08-02 2024-07-19 蝕刻方法及電漿處理裝置 TW202520374A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2023-126149 2023-08-02
JP2023126149 2023-08-02

Publications (1)

Publication Number Publication Date
TW202520374A true TW202520374A (zh) 2025-05-16

Family

ID=94395219

Family Applications (1)

Application Number Title Priority Date Filing Date
TW113127069A TW202520374A (zh) 2023-08-02 2024-07-19 蝕刻方法及電漿處理裝置

Country Status (5)

Country Link
JP (1) JPWO2025028302A1 (https=)
KR (1) KR20260048572A (https=)
CN (1) CN121647062A (https=)
TW (1) TW202520374A (https=)
WO (1) WO2025028302A1 (https=)

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6884722B2 (en) * 2001-09-27 2005-04-26 International Business Machines Corporation Method of fabricating a narrow polysilicon line
US9721784B2 (en) * 2013-03-15 2017-08-01 Applied Materials, Inc. Ultra-conformal carbon film deposition
JP6230954B2 (ja) * 2014-05-09 2017-11-15 東京エレクトロン株式会社 エッチング方法
US9553102B2 (en) * 2014-08-19 2017-01-24 Applied Materials, Inc. Tungsten separation
KR102452593B1 (ko) * 2015-04-15 2022-10-11 삼성전자주식회사 반도체 장치의 제조 방법
US10483109B2 (en) * 2016-04-12 2019-11-19 Tokyo Electron Limited Self-aligned spacer formation
JP6689159B2 (ja) * 2016-08-22 2020-04-28 東京エレクトロン株式会社 エッチング方法およびｄｒａｍキャパシタの製造方法
US20220165578A1 (en) * 2020-11-25 2022-05-26 Tokyo Electron Limited Substrate processing method and substrate processing apparatus
JP2023055335A (ja) * 2021-10-06 2023-04-18 東京エレクトロン株式会社 エッチング方法及びエッチング装置

Also Published As

Publication number Publication date
CN121647062A (zh) 2026-03-10
JPWO2025028302A1 (https=) 2025-02-06
WO2025028302A1 (ja) 2025-02-06
KR20260048572A (ko) 2026-04-10

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