TW202328395A - Composition, film and display device - Google Patents

Composition, film and display device Download PDF

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TW202328395A
TW202328395A TW111147895A TW111147895A TW202328395A TW 202328395 A TW202328395 A TW 202328395A TW 111147895 A TW111147895 A TW 111147895A TW 111147895 A TW111147895 A TW 111147895A TW 202328395 A TW202328395 A TW 202328395A
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西川裕佳子
大川春樹
小松慶史
徳田真芳
土谷崇夫
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日商住友化學股份有限公司
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    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/105—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having substances, e.g. indicators, for forming visible images
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    • C08F265/00—Macromolecular compounds obtained by polymerising monomers on to polymers of unsaturated monocarboxylic acids or derivatives thereof as defined in group C08F20/00
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    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
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    • C08L51/00—Compositions of graft polymers in which the grafted component is obtained by reactions only involving carbon-to-carbon unsaturated bonds; Compositions of derivatives of such polymers
    • C08L51/10—Compositions of graft polymers in which the grafted component is obtained by reactions only involving carbon-to-carbon unsaturated bonds; Compositions of derivatives of such polymers grafted on to inorganic materials
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
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    • C08L65/00—Compositions of macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain; Compositions of derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/06—Luminescent, e.g. electroluminescent, chemiluminescent materials containing organic luminescent materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/70—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing phosphorus
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/88—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/02—Diffusing elements; Afocal elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters

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  • Chemical & Material Sciences (AREA)
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  • Luminescent Compositions (AREA)
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Abstract

The present invention provides: a composition which contains (A) luminescent inorganic semiconductor particles and (B) a luminescent organic compound; a film which is formed from this composition; and a display device which comprises this film.

Description

組成物、膜及顯示裝置Composition, film and display device

本發明是有關於一種組成物及由其形成的膜、以及包括該膜的顯示裝置。The present invention relates to a composition, a film formed therefrom, and a display device including the film.

專利文獻1中記載有一種包含量子點的硬化性樹脂組成物、及使用該硬化性樹脂組成物形成的波長轉換膜。 [現有技術文獻] [專利文獻] Patent Document 1 describes a curable resin composition containing quantum dots, and a wavelength conversion film formed using the curable resin composition. [Prior art literature] [Patent Document]

[專利文獻1]日本專利特開2016-065178號公報[Patent Document 1] Japanese Patent Laid-Open No. 2016-065178

[發明所欲解決之課題][Problem to be Solved by the Invention]

本發明的一個目的在於提供一種組成物，其為包含量子點等發光性無機半導體粒子的組成物、且發光強度良好。本發明的其他目的在於提供一種由該組成物形成的膜、及包括該膜的顯示裝置。 [解決課題之手段] An object of the present invention is to provide a composition containing light-emitting inorganic semiconductor particles such as quantum dots and having good luminous intensity. Another object of the present invention is to provide a film formed from the composition, and a display device including the film. [Means to solve the problem]

本發明提供以下所示的組成物、膜及顯示裝置。 [1] 一種組成物，包含：發光性無機半導體粒子（A）以及發光性有機化合物（B）。 [2] 如[1]所述的組成物，其中所述發光性無機半導體粒子（A）於其發光光譜中具有極大波長為480 nm以上且560 nm以下或者570 nm以上且680 nm以下的發光波峰。 [3] 如[1]或[2]所述的組成物，其中所述發光性有機化合物（B）於其吸光光譜中具有極大波長為350 nm以上且550 nm以下的吸光波峰。 [4] 如[1]至[3]中任一項所述的組成物，進而包含光散射劑（C）。 [5] 如[1]至[4]中任一項所述的組成物，進而包含樹脂（D）。 [6] 如[1]至[5]中任一項所述的組成物，進而包含聚合性化合物（E）及聚合起始劑（F）。 [7] 一種膜，由如[1]至[6]中任一項所述的組成物形成。 [8] 如[7]所述的膜，其中所述膜於其發光光譜中具有極大波長為480 nm以上且560 nm以下或者570 nm以上且680 nm以下的發光波峰， 所述發光波峰的半峰全幅值為50 nm以下。 [9] 一種顯示裝置，包括如[7]或[8]所述的膜。 [發明的效果] The present invention provides the compositions, films, and display devices shown below. [1] A composition comprising: luminescent inorganic semiconductor particles (A) and a luminescent organic compound (B). [2] The composition according to [1], wherein the luminescent inorganic semiconductor particle (A) has luminescence with a maximum wavelength of 480 nm to 560 nm or 570 nm to 680 nm in its luminescence spectrum. crest. [3] The composition according to [1] or [2], wherein the light-emitting organic compound (B) has an absorption peak with a maximum wavelength of 350 nm to 550 nm in its absorption spectrum. [4] The composition according to any one of [1] to [3], further comprising a light scattering agent (C). [5] The composition according to any one of [1] to [4], further comprising a resin (D). [6] The composition according to any one of [1] to [5], further comprising a polymerizable compound (E) and a polymerization initiator (F). [7] A film formed of the composition according to any one of [1] to [6]. [8] The film according to [7], wherein the film has an emission peak with a maximum wavelength of 480 nm to 560 nm or 570 nm to 680 nm in its emission spectrum, The half-maximum full amplitude of the luminescence peak is below 50 nm. [9] A display device comprising the film according to [7] or [8]. [Effect of the invention]

提供一種組成物、由該組成物形成的膜、及包括該膜的顯示裝置，所述組成物為包含發光性無機半導體粒子的組成物、且發光強度良好。Provided are a composition, a film formed of the composition, and a display device including the film. The composition is a composition containing luminescent inorganic semiconductor particles and has good luminous intensity.

＜組成物＞ 本發明的組成物（以下，亦簡稱為「組成物」）包含：發光性無機半導體粒子（A）（以下，亦簡稱為「半導體粒子（A）」）、以及發光性有機化合物（B）。組成物可進而包含後述的其他成分。組成物可為藉由光照射或熱而硬化的硬化性組成物。若列舉組成物的若干實施形態，例如如以下般。 包含半導體粒子（A）以及發光性有機化合物（B）的組成物a、 包含半導體粒子（A）、發光性有機化合物（B）以及溶劑（J）的組成物b、 包含半導體粒子（A）、發光性有機化合物（B）、樹脂（D）以及溶劑（J）的組成物c、 包含半導體粒子（A）、發光性有機化合物（B）、樹脂（D）、聚合性化合物（E）、聚合起始劑（F）以及溶劑（J）的組成物d、 於所述組成物a～組成物d中進而包含有機配位體（G）的組成物e、 於所述組成物a～組成物e中進而包含光散射劑（C）的組成物f。 ＜Composition＞ The composition of the present invention (hereinafter, also simply referred to as "composition") includes: luminescent inorganic semiconductor particles (A) (hereinafter, also simply referred to as "semiconductor particles (A)"), and a luminescent organic compound (B). The composition may further contain other components described later. The composition may be a curable composition that is cured by light irradiation or heat. Some embodiments of the composition are listed, for example, as follows. Composition a containing semiconductor particles (A) and a light-emitting organic compound (B), Composition b including semiconductor particles (A), light emitting organic compound (B) and solvent (J), Composition c including semiconductor particles (A), light-emitting organic compound (B), resin (D) and solvent (J), Composition d including semiconductor particles (A), light-emitting organic compound (B), resin (D), polymerizable compound (E), polymerization initiator (F) and solvent (J), Composition e further comprising an organic ligand (G) in the composition a to composition d, Composition f further comprising a light-scattering agent (C) among the compositions a to e.

本發明的組成物可顯示出良好的發光強度，另外，由該組成物形成的膜亦可顯示出良好的發光強度。以下，亦將由本發明的組成物形成的膜簡稱為「膜」。另外，以下，關於與發光強度相關的記載，只要並無特別記述，則為針對組成物及/或膜的發光強度而提及者。 以下，對組成物中所含的或可能包含的成分進行說明。 The composition of the present invention can exhibit good luminous intensity, and a film formed from the composition can also exhibit good luminous intensity. Hereinafter, the film formed from the composition of the present invention is also simply referred to as "film". In addition, hereinafter, descriptions related to luminous intensity refer to the luminous intensity of the composition and/or film unless otherwise specified. Hereinafter, components contained or possibly contained in the composition will be described.

[1]發光性無機半導體粒子（A） 作為組成物中所含的半導體粒子（A），可列舉量子點及具有鈣鈦礦型結晶結構的化合物（以下，亦稱為「鈣鈦礦化合物」），更佳為量子點。量子點為粒徑1 nm以上且100 nm以下的發光性半導體微粒子，為利用半導體的帶隙吸收紫外光或可見光（例如藍色光）而發光的微粒子。 [1] Luminescent inorganic semiconductor particles (A) Examples of the semiconductor particles (A) contained in the composition include quantum dots and compounds having a perovskite crystal structure (hereinafter also referred to as “perovskite compounds”), more preferably quantum dots. Quantum dots are luminescent semiconductor particles with a particle diameter of 1 nm to 100 nm, which absorb ultraviolet light or visible light (such as blue light) by using the band gap of the semiconductor to emit light.

作為量子點，例如可列舉：CdS、CdSe、CdTe、ZnS、ZnSe、ZnTe、HgS、HgSe、HgTe、CdHgTe、CdSeS、CdSeTe、CdSTe、ZnSeS、ZnSeTe、ZnSTe、HgSeS、HgSeTe、HgSTe、CdZnS、CdZnSe、CdZnTe、CdHgS、CdHgSe、CdHgTe、HgZnS、HgZnSe、HgZnTe、CdZnSeS、CdZnSeTe、CdZnSTe、CdHgSeS、CdHgSeTe、CdHgSTe、HgZnSeS、HgZnSeTe、HgZnSTe等12族元素與16族元素的化合物；GaN、GaP、GaAs、AlN、AlP、AlAs、InN、InP、InAs、GaNP、GaNAs、GaPAs、AlNP、AlNAs、AlPAs、InNP、InNAs、InPAs、GaAlNP、GaAlNAs、GaAlPAs、GaInNP、GaInNAs、GaInPAs、InAlNP、InAlNAs、InAlPAs等13族元素與15族元素的化合物；PdS、PbSe等14族元素與16族元素的化合物等。Examples of quantum dots include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, HgTe, CdHgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, Compounds of Group 12 elements such as CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe and Group 16 elements; GaN, GaP , GaAs, AlN, Group 13 elements and Compounds of group 15 elements; compounds of group 14 elements such as PdS and PbSe and group 16 elements, etc.

於量子點包含S或Se的情況下，可使用利用金屬氧化物或有機物進行了表面修飾的量子點。藉由使用進行了表面修飾的量子點，可防止由組成物中所含的或可能包含的反應成分吸去S或Se。 另外，量子點可組合所述化合物而形成核殼結構。作為此種組合，可列舉核是CdSe並且殼是ZnS的微粒子、核是InP並且殼是ZnSeS的微粒子等。 In the case where the quantum dots contain S or Se, quantum dots surface-modified with metal oxides or organic substances can be used. By using surface-modified quantum dots, it is possible to prevent adsorption of S or Se by reactive components contained or possibly contained in the composition. In addition, quantum dots can combine the compounds to form a core-shell structure. Examples of such a combination include fine particles having a core of CdSe and a shell of ZnS, fine particles of a core of InP and a shell of ZnSeS, and the like.

量子點的能量狀態取決於其大小，因此藉由改變粒徑而能夠自由地選擇發光波長。例如，於僅由CdSe構成的量子點的情況下，粒徑為2.3 nm、3.0 nm、3.8 nm、4.6 nm時的發光光譜（螢光光譜）的波峰波長（發光波峰的極大波長）分別為528 nm、570 nm、592 nm、637 nm。另外，來自量子點的發光光的光譜寬度窄，藉由組合具有此種陡峭的波峰的光，於包括由組成物形成的膜的顯示裝置中，可擴大能夠顯示的色域。進而，量子點的響應性高，可效率良好地利用自光源放射出的光。The energy state of quantum dots depends on their size, so the emission wavelength can be freely selected by changing the particle size. For example, in the case of quantum dots composed only of CdSe, the peak wavelengths (maximum wavelengths of the emission peaks) of the emission spectra (fluorescence spectra) at particle sizes of 2.3 nm, 3.0 nm, 3.8 nm, and 4.6 nm are 528 nm, 570 nm, 592 nm, 637 nm. In addition, the spectral width of light emitted from quantum dots is narrow, and by combining light with such steep peaks, it is possible to expand the displayable color gamut in a display device including a film formed of the composition. Furthermore, the responsiveness of the quantum dot is high, and the light emitted from the light source can be efficiently used.

鈣鈦礦化合物為以A、B及X為成分的、具有鈣鈦礦型結晶結構的化合物。 A為於鈣鈦礦型結晶結構中位於以B為中心的六面體的各頂點的成分，且為一價陽離子。 X表示於鈣鈦礦型結晶結構中位於以B為中心的八面體的各頂點的成分，且為選自由鹵化物離子及硫氰酸根離子所組成的群組中的至少一種離子。 B為於鈣鈦礦型結晶結構中位於將A配置於頂點的六面體及將X配置於頂點的八面體的中心的成分，且為金屬離子。 The perovskite compound is a compound containing A, B, and X as components and having a perovskite crystal structure. A is a component located at each apex of a hexahedron centered on B in the perovskite crystal structure, and is a monovalent cation. X represents a component located at each apex of an octahedron centered on B in the perovskite crystal structure, and is at least one ion selected from the group consisting of halide ions and thiocyanate ions. B is a component located at the center of a hexahedron with A at its apex and an octahedron with X at its apex in the perovskite crystal structure, and is a metal ion.

作為以A、B及X為成分的鈣鈦礦化合物，並無特別限定，可為具有三維結構、二維結構、準二維結構中的任一種結構的化合物。 於三維結構的情況下，鈣鈦礦化合物由ABX (3+δ)表示。 於二維結構的情況下，鈣鈦礦化合物由A 2BX (4+δ)表示。 此處，δ為能夠根據B的電荷平衡而適宜變更的數，且為-0.7以上且0.7以下。 The perovskite compound having A, B, and X as components is not particularly limited, and may be a compound having any of a three-dimensional structure, a two-dimensional structure, and a quasi-two-dimensional structure. In the case of a three-dimensional structure, the perovskite compound is represented by ABX (3+δ) . In the case of a two-dimensional structure, the perovskite compound is represented by A 2 BX (4+δ) . Here, δ is a number that can be appropriately changed according to the charge balance of B, and is not less than -0.7 and not more than 0.7.

為鈣鈦礦化合物且由ABX (3+δ)表示的、具有三維結構的鈣鈦礦型結晶結構的化合物的較佳的具體例可列舉： CH 3NH 3PbBr 3、CH 3NH 3PbCl 3、CH 3NH 3PbI 3、CH 3NH 3PbBr (3-y)I y（0＜y＜3）、CH 3NH 3PbBr (3-y)Cl y（0＜y＜3）、(H 2N=CH-NH 2)PbBr 3、(H 2N=CH-NH 2)PbCl 3、(H 2N=CH-NH 2)PbI 3、 CH 3NH 3Pb (1-a)Ca aBr 3（0＜a≦0.7）、CH 3NH 3Pb (1-a)Sr aBr 3（0＜a≦0.7）、CH 3NH 3Pb (1-a)La aBr (3+δ)（0＜a≦0.7，0＜δ≦0.7）、CH 3NH 3Pb (1-a)Ba aBr 3（0＜a≦0.7）、CH 3NH 3Pb (1-a)Dy aBr (3+δ)（0＜a≦0.7，0＜δ≦0.7）、 CH 3NH 3Pb (1-a)Na aBr (3+δ)（0＜a≦0.7，-0.7≦δ＜0）、CH 3NH 3Pb (1-a)Li aBr (3+δ)（0＜a≦0.7，-0.7≦δ＜0）、 CsPb (1-a)Na aBr (3+δ)（0＜a≦0.7，-0.7≦δ＜0）、CsPb (1-a)Li aBr (3+δ)（0＜a≦0.7，-0.7≦δ＜0）、 CH 3NH 3Pb (1-a)Na aBr (3+δ-y)I y（0＜a≦0.7，-0.7≦δ＜0，0＜y＜3）、CH 3NH 3Pb (1-a)Li aBr (3+δ-y)I y（0＜a≦0.7，-0.7≦δ＜0，0＜y＜3）、CH 3NH 3Pb (1-a)Na aBr (3+δ-y)Cl y（0＜a≦0.7，-0.7≦δ＜0，0＜y＜3）、CH 3NH 3Pb (1-a)Li aBr (3+δ-y)Cl y（0＜a≦0.7，-0.7≦δ＜0，0＜y＜3）、 (H 2N=CH-NH 2)Pb (1-a)Na aBr (3+δ)（0＜a≦0.7，-0.7≦δ＜0）、(H 2N=CH-NH 2)Pb (1-a)Li aBr (3+δ)（0＜a≦0.7，-0.7≦δ＜0）、(H 2N=CH-NH 2)Pb (1-a)Na aBr (3+δ-y)I y（0＜a≦0.7，-0.7≦δ＜0，0＜y＜3）、(H 2N=CH-NH 2)Pb (1-a)Na aBr (3+δ-y)Cl y（0＜a≦0.7，-0.7≦δ＜0，0＜y＜3）、 CsPbBr 3、CsPbCl 3、CsPbI 3、CsPbBr (3-y)I y（0＜y＜3）、CsPbBr (3-y)Cl y（0＜y＜3）、CH 3NH 3PbBr (3-y)Cl y（0＜y＜3）、 CH 3NH 3Pb (1-a)Zn aBr 3（0＜a≦0.7）、CH 3NH 3Pb (1-a)Al aBr (3+δ)（0＜a≦0.7，0≦δ≦0.7）、CH 3NH 3Pb (1-a)Co aBr 3（0＜a≦0.7）、CH 3NH 3Pb (1-a)Mn aBr 3（0＜a≦0.7）、CH 3NH 3Pb (1-a)Mg aBr 3（0＜a≦0.7）、 CsPb (1-a)Zn aBr 3（0＜a≦0.7）、CsPb (1-a)Al aBr (3+δ)（0＜a≦0.7，0＜δ≦0.7）、CsPb (1-a)Co aBr 3（0＜a≦0.7）、CsPb (1-a)Mn aBr 3（0＜a≦0.7）、CsPb (1-a)Mg aBr 3（0＜a≦0.7）、 CH 3NH 3Pb (1-a)Zn aBr (3-y)I y（0＜a≦0.7，0＜y＜3）、CH 3NH 3Pb (1-a)Al aBr (3+δ-y)I y（0＜a≦0.7，0＜δ≦0.7，0＜y＜3）、CH 3NH 3Pb (1-a)Co aBr (3-y)I y（0＜a≦0.7，0＜y＜3）、CH 3NH 3Pb (1-a)Mn aBr (3-y)I y（0＜a≦0.7，0＜y＜3）、CH 3NH 3Pb (1-a)Mg aBr (3-y)I y（0＜a≦0.7，0＜y＜3）、CH 3NH 3Pb (1-a)Zn aBr (3-y)Cl y（0＜a≦0.7，0＜y＜3）、CH 3NH 3Pb (1-a)Al aBr (3+δ-y)Cl y（0＜a≦0.7，0＜δ≦0.7，0＜y＜3）、CH 3NH 3Pb (1-a)Co aBr (3+δ-y)Cl y（0＜a≦0.7，0＜y＜3）、CH 3NH 3Pb (1-a)Mn aBr (3-y)Cl y（0＜a≦0.7，0＜y＜3）、CH 3NH 3Pb (1-a)Mg aBr (3-y)Cl y（0＜a≦0.7，0＜y＜3）、 (H 2N=CH-NH 2)Zn aBr 3（0＜a≦0.7）、(H 2N=CH-NH 2)Mg aBr 3（0＜a≦0.7）、(H 2N=CH-NH 2)Pb (1-a)Zn aBr (3-y)I y（0＜a≦0.7，0＜y＜3）、(H 2N=CH-NH 2)Pb (1-a)Zn aBr (3-y)Cl y（0＜a≦0.7，0＜y＜3）等。 Preferable specific examples of compounds having a three-dimensional perovskite crystal structure represented by ABX (3+δ) which are perovskite compounds include: CH 3 NH 3 PbBr 3 , CH 3 NH 3 PbCl 3 , CH 3 NH 3 PbI 3 , CH 3 NH 3 PbBr (3-y) I y (0<y<3), CH 3 NH 3 PbBr (3-y) Cl y (0<y<3), (H 2 N=CH-NH 2 )PbBr 3 , (H 2 N=CH-NH 2 )PbCl 3 , (H 2 N=CH-NH 2 )PbI 3 , CH 3 NH 3 Pb (1-a) Ca a Br 3 (0<a≦0.7), CH 3 NH 3 Pb (1-a) Sr a Br 3 (0<a≦0.7), CH 3 NH 3 Pb (1-a) La a Br (3+δ) ( 0<a≦0.7, 0<δ≦0.7), CH 3 NH 3 Pb (1-a) Ba a Br 3 (0<a≦0.7), CH 3 NH 3 Pb (1-a) Dy a Br (3 +δ) (0<a≦0.7, 0<δ≦0.7), CH 3 NH 3 Pb (1-a) Na a Br (3+δ) (0<a≦0.7, -0.7≦δ<0), CH 3 NH 3 Pb (1-a) Li a Br (3+δ) (0<a≦0.7, -0.7≦δ<0), CsPb (1-a) Na a Br (3+δ) (0< a≦0.7, -0.7≦δ<0), CsPb (1-a) Li a Br (3+δ) (0<a≦0.7, -0.7≦δ<0), CH 3 NH 3 Pb (1-a ) Na a Br (3+δ-y) I y (0<a≦0.7, -0.7≦δ<0, 0<y<3), CH 3 NH 3 Pb (1-a) Li a Br (3+ δ-y) I y (0<a≦0.7, -0.7≦δ<0, 0<y<3), CH 3 NH 3 Pb (1-a) Na a Br (3+δ-y) Cl y ( 0<a≦0.7, -0.7≦δ<0, 0<y<3), CH 3 NH 3 Pb (1-a) Li a Br (3+δ-y) Cl y (0<a≦0.7, - 0.7≦δ<0, 0<y<3), (H 2 N=CH-NH 2 )Pb (1-a) Na a Br (3+δ) (0<a≦0.7, -0.7≦δ<0 ), (H 2 N=CH-NH 2 )Pb (1-a) Li a Br (3+δ) (0<a≦0.7, -0.7≦δ<0), (H 2 N=CH-NH 2 )Pb (1-a) Na a Br (3+δ-y) I y (0<a≦0.7, -0.7≦δ<0, 0<y<3), (H 2 N=CH-NH 2 ) Pb (1-a) Na a Br (3+δ-y) Cl y (0<a≦0.7, -0.7≦δ<0, 0<y<3), CsPbBr 3 , CsPbCl 3 , CsPbI 3 , CsPbBr ( 3-y) I y (0<y<3), CsPbBr (3-y) Cl y (0<y<3), CH 3 NH 3 PbBr (3-y) Cl y (0<y<3), CH 3 NH 3 Pb (1-a) Zn a Br 3 (0<a≦0.7), CH 3 NH 3 Pb (1-a) Al a Br (3+δ) (0<a≦0.7, 0≦δ ≦0.7), CH 3 NH 3 Pb (1-a) Co a Br 3 (0<a≦0.7), CH 3 NH 3 Pb (1-a) Mn a Br 3 (0<a≦0.7), CH 3 NH 3 Pb (1-a) Mg a Br 3 (0<a≦0.7), CsPb (1-a) Zn a Br 3 (0<a≦0.7), CsPb (1-a) Al a Br (3+ δ) (0<a≦0.7, 0<δ≦0.7), CsPb (1-a) Co a Br 3 (0<a≦0.7), CsPb (1-a) Mn a Br 3 (0<a≦0.7 ), CsPb (1-a) Mg a Br 3 (0<a≦0.7), CH 3 NH 3 Pb (1-a) Zn a Br (3-y) I y (0<a≦0.7, 0<y <3), CH 3 NH 3 Pb (1-a) Al a Br (3+δ-y) I y (0<a≦0.7, 0<δ≦0.7, 0<y<3), CH 3 NH 3 Pb (1-a) Co a Br (3-y) I y (0<a≦0.7, 0<y<3), CH 3 NH 3 Pb (1-a) Mn a Br (3-y) I y (0<a≦0.7, 0<y<3), CH 3 NH 3 Pb (1-a) Mg a Br (3-y) I y (0<a≦0.7, 0<y<3), CH 3 NH 3 Pb (1-a) Zn a Br (3-y) Cl y (0<a≦0.7, 0<y<3), CH 3 NH 3 Pb (1-a) Al a Br (3+δ- y) Cl y (0<a≦0.7, 0<δ≦0.7, 0<y<3), CH 3 NH 3 Pb (1-a) Co a Br (3+δ-y) Cl y (0<a ≦0.7, 0<y<3), CH 3 NH 3 Pb (1-a) Mn a Br (3-y) Cl y (0<a≦0.7, 0<y<3), CH 3 NH 3 Pb ( 1-a) Mg a Br (3-y) Cl y (0<a≦0.7, 0<y<3), (H 2 N=CH-NH 2 )Zn a Br 3 (0<a≦0.7), (H 2 N=CH-NH 2 )Mg a Br 3 (0<a≦0.7), (H 2 N=CH-NH 2 )Pb (1-a) Zn a Br (3-y) I y (0 <a≦0.7, 0<y<3), (H 2 N=CH-NH 2 )Pb (1-a) Zn a Br (3-y) Cl y (0<a≦0.7, 0<y<3 )wait.

為鈣鈦礦化合物且由A 2BX (4+δ)表示的、具有二維結構的鈣鈦礦型結晶結構的化合物的較佳的具體例可列舉： (C 4H 9NH 3) 2PbBr 4、(C 4H 9NH 3) 2PbCl 4、(C 4H 9NH 3) 2PbI 4、(C 7H 15NH 3) 2PbBr 4、(C 7H 15NH 3) 2PbCl 4、(C 7H 15NH 3) 2PbI 4、(C 4H 9NH 3) 2Pb (1-a)Li aBr (4+δ)（0＜a≦0.7，-0.7≦δ＜0）、(C 4H 9NH 3) 2Pb (1-a)Na aBr (4+δ)（0＜a≦0.7，-0.7≦δ＜0）、(C 4H 9NH 3) 2Pb (1-a)Rb aBr (4+δ)（0＜a≦0.7，-0.7≦δ＜0）、 (C 7H 15NH 3) 2Pb (1-a)Na aBr (4+δ)（0＜a≦0.7，-0.7≦δ＜0）、(C 7H 15NH 3) 2Pb (1-a)Li aBr (4+δ)（0＜a≦0.7，-0.7≦δ＜0）、(C 7H 15NH 3) 2Pb (1-a)RbaBr (4+δ)（0＜a≦0.7，-0.7≦δ＜0）、 (C 4H 9NH 3) 2Pb (1-a)Na aBr (4+δ-y)I y（0＜a≦0.7，-0.7≦δ＜0，0＜y＜4）、(C 4H 9NH 3) 2Pb (1-a)Li aBr (4+δ-y)I y（0＜a≦0.7，-0.7≦δ＜0，0＜y＜4）、(C 4H 9NH 3) 2Pb (1-a)Rb aBr (4+δ-y)I y（0＜a≦0.7，-0.7≦δ＜0，0＜y＜4）、 (C 4H 9NH 3) 2Pb (1-a)Na aBr (4+δ-y)Cl y（0＜a≦0.7，-0.7≦δ＜0，0＜y＜4）、(C 4H 9NH 3) 2Pb (1-a)Li aBr (4+δ-y)Cl y（0＜a≦0.7，-0.7≦δ＜0，0＜y＜4）、(C 4H 9NH 3) 2Pb (1-a)Rb aBr (4+δ-y)Cl y（0＜a≦0.7，-0.7≦δ＜0，0＜y＜4）、 (C 4H 9NH 3) 2PbBr 4、(C 7H 15NH 3) 2PbBr 4、 (C 4H 9NH 3) 2PbBr (4-y)Cl y（0＜y＜4）、(C 4H 9NH 3) 2PbBr (4-y)I y（0＜y＜4）、 (C 4H 9NH 3) 2Pb (1-a)Zn aBr 4（0＜a≦0.7）、(C 4H 9NH 3) 2Pb (1-a)Mg aBr 4（0＜a≦0.7）、(C 4H 9NH 3) 2Pb (1-a)Co aBr 4（0＜a≦0.7）、(C 4H 9NH 3) 2Pb (1-a)Mn aBr 4（0＜a≦0.7）、 (C 7H 15NH 3) 2Pb (1-a)Zn aBr 4（0＜a≦0.7）、(C 7H 15NH 3) 2Pb (1-a)Mg aBr 4（0＜a≦0.7）、(C 7H 15NH 3) 2Pb (1-a)Co aBr 4（0＜a≦0.7）、(C 7H 15NH 3) 2Pb (1-a)Mn aBr 4（0＜a≦0.7）、 (C 4H 9NH 3) 2Pb (1-a)Zn aBr (4-y)I y（0＜a≦0.7，0＜y＜4）、(C 4H 9NH 3) 2Pb (1-a)Mg aBr (4-y)I y（0＜a≦0.7，0＜y＜4）、(C 4H 9NH 3) 2Pb (1-a)Co aBr (4-y)I y（0＜a≦0.7，0＜y＜4）、(C 4H 9NH 3) 2Pb (1-a)Mn aBr (4-y)I y（0＜a≦0.7，0＜y＜4）、 (C 4H 9NH 3) 2Pb (1-a)Zn aBr (4-y)Cl y（0＜a≦0.7，0＜y＜4）、(C 4H 9NH 3) 2Pb (1-a)Mg aBr (4-y)Cl y（0＜a≦0.7，0＜y＜4）、(C 4H 9NH 3) 2Pb (1-a)Co aBr (4-y)Cl y（0＜a≦0.7，0＜y＜4）、(C 4H 9NH 3) 2Pb (1-a)Mn aBr (4-y)Cl y（0＜a≦0.7，0＜y＜4）等。 Preferable specific examples of compounds having a two-dimensional perovskite crystal structure represented by A 2 BX (4+δ) that are perovskite compounds include: (C 4 H 9 NH 3 ) 2 PbBr 4. (C 4 H 9 NH 3 ) 2 PbCl 4 , (C 4 H 9 NH 3 ) 2 PbI 4 , (C 7 H 15 NH 3 ) 2 PbBr 4 , (C 7 H 15 NH 3 ) 2 PbCl 4 , (C 7 H 15 NH 3 ) 2 PbI 4 , (C 4 H 9 NH 3 ) 2 Pb (1-a) Li a Br (4+δ) (0<a≦0.7, -0.7≦δ<0), (C 4 H 9 NH 3 ) 2 Pb (1-a) Na a Br (4+δ) (0<a≦0.7, -0.7≦δ<0), (C 4 H 9 NH 3 ) 2 Pb (1 -a) Rb a Br (4+δ) (0<a≦0.7, -0.7≦δ<0), (C 7 H 15 NH 3 ) 2 Pb (1-a) Na a Br (4+δ) ( 0<a≦0.7, -0.7≦δ<0), (C 7 H 15 NH 3 ) 2 Pb (1-a) Li a Br (4+δ) (0<a≦0.7, -0.7≦δ<0 ), (C 7 H 15 NH 3 ) 2 Pb (1-a) RbaBr (4+δ) (0<a≦0.7, -0.7≦δ<0), (C 4 H 9 NH 3 ) 2 Pb (1 -a) Na a Br (4+δ-y) I y (0<a≦0.7, -0.7≦δ<0, 0<y<4), (C 4 H 9 NH 3 ) 2 Pb (1-a ) Li a Br (4+δ-y) I y (0<a≦0.7, -0.7≦δ<0, 0<y<4), (C 4 H 9 NH 3 ) 2 Pb (1-a) Rb a Br (4+δ-y) I y (0<a≦0.7, -0.7≦δ<0, 0<y<4), (C 4 H 9 NH 3 ) 2 Pb (1-a) Na a Br (4+δ-y) Cl y (0<a≦0.7, -0.7≦δ<0, 0<y<4), (C 4 H 9 NH 3 ) 2 Pb (1-a) Li a Br (4 +δ-y) Cl y (0<a≦0.7, -0.7≦δ<0, 0<y<4), (C 4 H 9 NH 3 ) 2 Pb (1-a) Rb a Br (4+δ -y) Cl y (0<a≦0.7, -0.7≦δ<0, 0<y<4), (C 4 H 9 NH 3 ) 2 PbBr 4 , (C 7 H 15 NH 3 ) 2 PbBr 4 , (C 4 H 9 NH 3 ) 2 PbBr (4-y) Cl y (0<y<4), (C 4 H 9 NH 3 ) 2 PbBr (4-y) I y (0<y<4), (C 4 H 9 NH 3 ) 2 Pb (1-a) Zn a Br 4 (0<a≦0.7), (C 4 H 9 NH 3 ) 2 Pb (1-a) Mg a Br 4 (0<a ≦0.7), (C 4 H 9 NH 3 ) 2 Pb (1-a) Co a Br 4 (0<a≦0.7), (C 4 H 9 NH 3 ) 2 Pb (1-a) Mn a Br 4 (0<a≦0.7), (C 7 H 15 NH 3 ) 2 Pb (1-a) Zn a Br 4 (0<a≦0.7), (C 7 H 15 NH 3 ) 2 Pb (1-a) Mg a Br 4 (0<a≦0.7), (C 7 H 15 NH 3 ) 2 Pb (1-a) Co a Br 4 (0<a≦0.7), (C 7 H 15 NH 3 ) 2 Pb ( 1-a) Mn a Br 4 (0<a≦0.7), (C 4 H 9 NH 3 ) 2 Pb (1-a) Zn a Br (4-y) I y (0<a≦0.7, 0<y<4), (C 4 H 9 NH 3 ) 2 Pb (1-a) Mg a Br (4-y) I y (0<a≦0.7, 0<y<4), (C 4 H 9 NH 3 ) 2 Pb (1-a) Co a Br (4-y) I y (0<a≦0.7, 0<y<4), (C 4 H 9 NH 3 ) 2 Pb (1-a) Mn a Br (4-y) I y (0<a≦0.7, 0<y<4), (C 4 H 9 NH 3 ) 2 Pb (1-a) Zn a Br (4-y) Cl y (0< a≦0.7, 0<y<4), (C 4 H 9 NH 3 ) 2 Pb (1-a) Mg a Br (4-y) Cl y (0<a≦0.7, 0<y<4), (C 4 H 9 NH 3 ) 2 Pb (1-a) Co a Br (4-y) Cl y (0<a≦0.7, 0<y<4), (C 4 H 9 NH 3 ) 2 Pb ( 1-a) Mn a Br (4-y) Cl y (0<a≦0.7, 0<y<4), etc.

組成物可含有僅一種藉由自光源放射出的光而發出特定波長的光的半導體粒子（A），亦可組合含有兩種以上的發出不同波長的光的半導體粒子（A）。作為所述特定波長的光，例如可列舉紅色光、綠色光、藍色光，較佳為紅色光、綠色光。半導體粒子（A）及包含其的組成物可於其發光光譜中具有極大波長為480 nm以上且560 nm以下或者570 nm以上且680 nm以下的發光波峰。The composition may contain only one kind of semiconductor particles (A) emitting light of a specific wavelength by light emitted from a light source, or may contain two or more kinds of semiconductor particles (A) emitting light of different wavelengths in combination. Examples of light of the specific wavelength include red light, green light, and blue light, preferably red light and green light. The semiconductor particle (A) and the composition including the same may have a luminescence peak with a maximum wavelength of 480 nm to 560 nm or 570 nm to 680 nm in the luminescence spectrum.

於一個實施形態中，組成物包含半導體粒子（A-1）作為半導體粒子（A），該半導體粒子（A-1）於其發光光譜中具有極大波長為480 nm以上且560 nm以下、較佳為500 nm以上且560 nm以下、更佳為520 nm以上且550 nm以下的發光波峰。於其他實施形態中，組成物包含半導體粒子（A-2）作為半導體粒子（A），該半導體粒子（A-2）具有極大波長為570 nm以上且680 nm以下、較佳為590 nm以上且660 nm以下、更佳為600 nm以上且650 nm以下的發光波峰。半導體粒子（A-1）及半導體粒子（A-2）的所述發光波峰的半峰全幅值分別較佳為50 nm以下，更佳為45 nm以下。該半峰全幅值可為20 nm以上或30 nm以上。半導體粒子（A）的發光光譜可依照後述的實施例一欄中記載的測定方法來測定。In one embodiment, the composition includes semiconductor particles (A-1) as the semiconductor particles (A), and the semiconductor particles (A-1) have a maximum wavelength of not less than 480 nm and not more than 560 nm, preferably It is a light emission peak between 500 nm and 560 nm, more preferably between 520 nm and 550 nm. In another embodiment, the composition includes semiconductor particles (A-2) as the semiconductor particles (A), and the semiconductor particles (A-2) have a maximum wavelength of 570 nm or more and 680 nm or less, preferably 590 nm or more and The emission peak is below 660 nm, more preferably above 600 nm and below 650 nm. The full width at half maximum of the luminescence peaks of the semiconductor particles (A-1) and semiconductor particles (A-2) is preferably 50 nm or less, more preferably 45 nm or less. The full amplitude at half maximum may be greater than 20 nm or greater than 30 nm. The emission spectrum of the semiconductor particle (A) can be measured in accordance with the measurement method described in the section of Examples described later.

就提高發光強度的觀點而言，半導體粒子（A-1）於其吸光光譜中較佳為具有極大波長為450 nm以上且550 nm以下的吸光波峰，更佳為具有極大波長為450 nm以上且550 nm以下的吸光波峰且於500 nm以下的波長區域具有吸收。半導體粒子（A-1）更佳為於其吸光光譜中具有極大波長為460 nm以上且530 nm以下的吸光波峰。From the viewpoint of increasing the luminous intensity, the semiconductor particle (A-1) preferably has an absorption peak with a maximum wavelength of 450 nm or more and 550 nm or less in its absorption spectrum, more preferably has a maximum wavelength of 450 nm or more and 550 nm or less. Absorption peak below 550 nm and absorption in the wavelength region below 500 nm. The semiconductor particle (A-1) more preferably has an absorption peak with a maximum wavelength of not less than 460 nm and not more than 530 nm in its absorption spectrum.

就提高發光強度的觀點而言，半導體粒子（A-2）於其吸光光譜中較佳為具有極大波長為550 nm以上且650 nm以下的吸光波峰，更佳為具有極大波長為550 nm以上且650 nm以下的吸光波峰且於600 nm以下的波長區域具有吸收。半導體粒子（A-2）更佳為於其吸光光譜中具有極大波長為560 nm以上且630 nm以下的吸光波峰。半導體粒子（A）的吸光光譜可依照後述的實施例一欄中記載的測定方法來測定。From the viewpoint of increasing the luminous intensity, the semiconductor particle (A-2) preferably has an absorption peak with a maximum wavelength of 550 nm or more and 650 nm or less in its absorption spectrum, and more preferably has a maximum wavelength of 550 nm or more and 650 nm or less. The absorption peak below 650 nm has absorption in the wavelength region below 600 nm. The semiconductor particle (A-2) more preferably has an absorption peak with a maximum wavelength of 560 nm to 630 nm in its absorption spectrum. The absorption spectrum of the semiconductor particle (A) can be measured in accordance with the measurement method described in the section of Examples described later.

於組成物包含後述的樹脂（D）的情況下，相對於組成物的固體成分的總量，組成物中的半導體粒子（A）的含有率例如為1質量%以上且60質量%以下，較佳為10質量%以上且50質量%以下，更佳為15質量%以上且50質量%以下，進而佳為20質量%以上且50質量%以下，進而更佳為20質量%以上且40質量%以下。When the composition contains a resin (D) described later, the content of the semiconductor particles (A) in the composition is, for example, 1% by mass or more and 60% by mass or less with respect to the total solid content of the composition. Preferably it is 10 mass % or more and 50 mass % or less, More preferably, it is 15 mass % or more and 50 mass % or less, More preferably, it is 20 mass % or more and 50 mass % or less, More preferably, it is 20 mass % or more and 40 mass % the following.

於組成物不含後述的樹脂（D）的情況下，相對於組成物的固體成分的總量，組成物中的半導體粒子（A）的含有率例如為30質量%以上且95質量%以下，較佳為40質量%以上且90質量%以下，更佳為50質量%以上且85質量%以下，進而佳為55質量%以上且80質量%以下，進而更佳為60質量%以上且75質量%以下。When the composition does not contain the resin (D) described later, the content of the semiconductor particles (A) in the composition is, for example, 30 mass % or more and 95 mass % or less with respect to the total solid content of the composition, Preferably at least 40% by mass and at most 90% by mass, more preferably at least 50% by mass and at most 85% by mass, still more preferably at least 55% by mass and at most 80% by mass, still more preferably at least 60% by mass and at most 75% by mass %the following.

組成物例如可包含半導體粒子（A-1）及半導體粒子（A-2）等而可包含兩種以上的半導體粒子（A）。該情況下，半導體粒子（A）的含有率是指兩種以上的半導體粒子（A）的合計含有率。關於組成物中所含的或可能包含的後述的半導體粒子（A）以外的成分，亦同樣如此，該成分的含量或含有率於包含兩種以上的情況下，是指該些的合計含量或合計含有率。The composition may contain, for example, semiconductor particles (A-1) and semiconductor particles (A-2), etc., and may contain two or more types of semiconductor particles (A). In this case, the content of semiconductor particles (A) refers to the total content of two or more types of semiconductor particles (A). The same applies to components other than the semiconductor particles (A) described later that are contained or may be contained in the composition, and the content or content rate of these components refers to the total content or Total content rate.

於本說明書中，固體成分的總量是指組成物中所含的成分中的去除溶劑（J）後的成分的合計。組成物的固體成分中的含有率可藉由液相層析或氣相層析等公知的分析手段來測定。組成物的固體成分中的各成分的含有率亦可根據組成物製備時的調配來算出。In this specification, the total amount of solid content refers to the total of the components contained in the composition except for the solvent (J). The content rate in the solid content of the composition can be measured by known analytical means such as liquid chromatography or gas chromatography. The content rate of each component in the solid content of a composition can also be calculated from the preparation at the time of preparation of a composition.

[2]有機配位體（G） 組成物可進而包含有機配位體（G），半導體粒子（A）亦可於配位有有機配位體（G）的狀態下存在於組成物中。有機配位體（G）例如為具有顯示出對於半導體粒子（A）的配位能力的極性基的有機化合物。有機配位體（G）例如可配位於半導體粒子（A）的表面。組成物可包含一種或兩種以上的有機配位體（G）。 [2] Organic ligand (G) The composition may further include an organic ligand (G), and the semiconductor particle (A) may exist in the composition in a state where the organic ligand (G) is coordinated. The organic ligand (G) is, for example, an organic compound having a polar group that exhibits coordination ability to the semiconductor particle (A). The organic ligand (G) can be coordinated on the surface of the semiconductor particle (A), for example. The composition may contain one or two or more organic ligands (G).

於組成物中，有機配位體（G）較佳為其至少一部分分子配位於半導體粒子（A），亦可其全部或幾乎全部的分子配位於半導體粒子（A）。即，組成物較佳為包含配位於半導體粒子（A）的有機配位體（G），但亦可一併包含配位於半導體粒子（A）的有機配位體（G）、以及未配位於半導體粒子（A）的有機配位體（G）。In the composition, the organic ligand (G) preferably coordinates at least a part of its molecules to the semiconductor particle (A), and may coordinate all or almost all of its molecules to the semiconductor particle (A). That is, the composition preferably contains the organic ligand (G) coordinated to the semiconductor particle (A), but may also contain the organic ligand (G) coordinated to the semiconductor particle (A), and the organic ligand (G) not coordinated to The organic ligand (G) of the semiconductor particle (A).

就提高半導體粒子（A）的穩定性及分散性、以及發光強度的觀點而言，包含配位於半導體粒子（A）的有機配位體（G）可能會有利。有機配位體（G）例如可配位於半導體粒子（A）的表面。Including the organic ligand (G) coordinated to the semiconductor particle (A) may be advantageous from the viewpoint of improving the stability and dispersibility of the semiconductor particle (A), and the luminous intensity. The organic ligand (G) can be coordinated on the surface of the semiconductor particle (A), for example.

有機配位體（G）的極性基例如較佳為選自由硫醇基（-SH）、羧基（-COOH）及胺基（-NH 2）所組成的群組中的至少一種基。選自該群組中的極性基於提高對半導體粒子（A）的配位性方面可能會有利。高配位性可有助於提高組成物中的半導體粒子（A）的穩定性及分散性、以及提高發光強度等。其中，極性基更佳為選自由硫醇基及羧基所組成的群組中的至少一種基。有機配位體（G）可具有一個或兩個以上的極性基。 The polar group of the organic ligand (G), for example, is preferably at least one group selected from the group consisting of a thiol group (—SH), a carboxyl group (—COOH) and an amine group (—NH 2 ). The polarity selected from this group may be advantageous in terms of improving coordination to the semiconductor particle (A). High coordination can contribute to the improvement of the stability and dispersibility of the semiconductor particles (A) in the composition, and the improvement of luminous intensity. Among them, the polar group is more preferably at least one group selected from the group consisting of thiol group and carboxyl group. The organic ligand (G) may have one or two or more polar groups.

有機配位體（G）例如可為下述式（x）所表示的有機化合物。 X A-R X（x） 式中，X A為所述極性基，R X為可包含雜原子（N、O、S、鹵素原子等）的一價烴基。該烴基可具有一個或兩個以上的碳-碳雙鍵等不飽和鍵。該烴基可具有直鏈狀、分支鏈狀或環狀結構。該烴基的碳數例如為1以上且40以下，亦可為1以上且30以下。該烴基中所含的亞甲基可經-O-、-S-、-C(=O)-、-C(=O)-O-、-O-C(=O)-、-C(=O)-NH-、-NH-等取代。 The organic ligand (G) may be, for example, an organic compound represented by the following formula (x). X A -R X (x) In the formula, X A is the polar group, and R X is a monovalent hydrocarbon group that may contain heteroatoms (N, O, S, halogen atoms, etc.). The hydrocarbon group may have one or more unsaturated bonds such as carbon-carbon double bonds. This hydrocarbon group may have a linear, branched or cyclic structure. The carbon number of the hydrocarbon group is, for example, 1 to 40, or may be 1 to 30. The methylene group contained in the hydrocarbon group can be passed through -O-, -S-, -C(=O)-, -C(=O)-O-, -OC(=O)-, -C(=O )-NH-, -NH- and other substitutions.

基R X亦可包含極性基。關於該極性基的具體例，可引用極性基X A的所述記述。 The group Rx may also contain polar groups. Regarding specific examples of the polar group, the above description of the polar group X A can be cited.

作為具有羧基作為極性基X A的有機配位體的具體例，可列舉：甲酸、乙酸、丙酸、以及此外的飽和或不飽和脂肪酸。飽和或不飽和脂肪酸的具體例包含：丁酸、戊酸、己酸、辛酸、癸酸、月桂酸、肉豆蔻酸、十五酸、棕櫚酸、十七酸（margaric acid）、硬脂酸、花生酸（arachidic acid）、二十二酸、二十四酸（lignoceric acid）等飽和脂肪酸；肉豆蔻油酸（myristoleic acid）、棕櫚油酸（palmitoleic acid）、油酸（oleic acid）、二十碳烯酸（icosenoic acid）、芥子酸（erucic acid）、二十四碳烯酸（nervonic acid）等一元不飽和脂肪酸；亞麻油酸、α-次亞麻油酸、γ-次亞麻油酸、十八碳四烯酸（stearidonic acid）、雙高-γ-次亞麻油酸、花生油酸（arachidonic acid）、二十碳四烯酸（eicosatetraenoic acid）、二十二碳二烯酸（docosadienoic acid）、腎上腺酸（adrenic acid）（二十二碳四烯酸（docosatetraenoic acid））等多元不飽和脂肪酸。 Specific examples of the organic ligand having a carboxyl group as the polar group X A include formic acid, acetic acid, propionic acid, and other saturated or unsaturated fatty acids. Specific examples of saturated or unsaturated fatty acids include butyric acid, valeric acid, caproic acid, caprylic acid, capric acid, lauric acid, myristic acid, pentadecanoic acid, palmitic acid, margaric acid, stearic acid, Saturated fatty acids such as arachidic acid, behenic acid, and lignoceric acid; myristoleic acid, palmitoleic acid, oleic acid, and oleic acid Monounsaturated fatty acids such as icosenoic acid, erucic acid, and nervonic acid; linolenic acid, α-linolenic acid, γ-linolenic acid, stearidonic acid, dihomo-gamma-linolenic acid, arachidonic acid, eicosatetraenoic acid, docosadienoic acid, Polyunsaturated fatty acids such as adrenic acid (docosatetraenoic acid).

具有硫醇基或胺基作為極性基X A的有機配位體的具體例包含將以上所例示的具有羧基作為極性基X A的有機配位體的羧基置換為硫醇基或胺基而成的有機配位體。 Specific examples of the organic ligand having a thiol group or an amine group as the polar group XA include replacing the carboxyl group of the organic ligand having a carboxyl group as the polar group XA exemplified above with a thiol group or an amine group. organic ligands.

除了所述以外，作為所述式（x）所表示的有機配位體，可列舉化合物（G-1）及化合物（G-2）。In addition to the above, examples of the organic ligand represented by the formula (x) include compound (G-1) and compound (G-2).

〔化合物（G-1）〕 化合物（G-1）為具有第一官能基及第二官能基的化合物。第一官能基為羧基（-COOH），第二官能基為羧基或硫醇基（-SH）。化合物（G-1）由於具有羧基及/或硫醇基，因此可成為配位於半導體粒子（A）的配位體。組成物可包含僅一種化合物（G-1），亦可包含兩種以上。 [Compound (G-1)] Compound (G-1) is a compound having a first functional group and a second functional group. The first functional group is carboxyl group (-COOH), and the second functional group is carboxyl group or thiol group (-SH). Since the compound (G-1) has a carboxyl group and/or a thiol group, it can serve as a ligand coordinated to the semiconductor particle (A). The composition may contain only one kind of compound (G-1), or may contain two or more kinds thereof.

化合物（G-1）的一例為下述式（G-1a）所表示的化合物。化合物（G-1）亦可為式（G-1a）所表示的化合物的酸酐。An example of the compound (G-1) is a compound represented by the following formula (G-1a). The compound (G-1) may be an acid anhydride of the compound represented by the formula (G-1a).

[化1] [式中，R B表示二價烴基；於存在多個R B的情況下，該些可相同亦可不同；所述烴基可具有一個以上的取代基；於存在多個取代基的情況下，該些可相同亦可不同，該些可彼此鍵結而與各自所鍵結的原子一同形成環；所述烴基中所含的-CH 2-可經取代為-O-、-S-、-SO 2-、-CO-及-NH-的至少一個； p表示1～10的整數] [chemical 1] [wherein, RB represents a divalent hydrocarbon group; in the case of multiple RBs , these may be the same or different; the hydrocarbon group may have more than one substituent; in the case of multiple substituents, These can be the same or different, and these can be bonded to each other to form a ring together with the atoms to which they are bonded; the -CH 2 - contained in the hydrocarbon group can be substituted with -O-, -S-, - At least one of SO 2 -, -CO-, and -NH-; p represents an integer of 1 to 10]

作為R B所表示的二價烴基，例如可列舉鏈狀烴基、脂環式烴基、芳香族烴基等。 Examples of the divalent hydrocarbon group represented by R B include chain hydrocarbon groups, alicyclic hydrocarbon groups, and aromatic hydrocarbon groups.

作為鏈狀烴基，例如可列舉直鏈狀或分支狀的烷二基，其碳數通常為1～50，較佳為1～20，更佳為1～10。作為脂環式烴基，例如可列舉單環式或多環式的環烷二基，其碳數通常為3～50，較佳為3～20，更佳為3～10。作為芳香族烴基，例如可列舉單環式或多環式的芳烴二基，其碳數通常為6～20。As a chain hydrocarbon group, a linear or branched alkanediyl group is mentioned, for example, The carbon number is 1-50 normally, Preferably it is 1-20, More preferably, it is 1-10. The alicyclic hydrocarbon group includes, for example, a monocyclic or polycyclic cycloalkanediyl group, and its carbon number is usually 3-50, preferably 3-20, more preferably 3-10. As the aromatic hydrocarbon group, for example, a monocyclic or polycyclic arenediyl group is mentioned, and its carbon number is usually 6-20.

作為所述烴基可具有的取代基，例如可列舉：碳數1～50的烷基、碳數3～50的環烷基、碳數6～20的芳基、羧基、胺基、鹵素原子等。所述烴基可具有的取代基較佳為羧基、胺基或鹵素原子。Examples of substituents that the hydrocarbon group may have include an alkyl group having 1 to 50 carbons, a cycloalkyl group having 3 to 50 carbons, an aryl group having 6 to 20 carbons, a carboxyl group, an amino group, a halogen atom, and the like. . The substituent that the hydrocarbon group may have is preferably a carboxyl group, an amino group or a halogen atom.

於所述烴基中所含的-CH 2-經取代為-O-、-CO-及-NH-的至少一個的情況下，取代-CH 2-的較佳為-CO-及-NH-的至少一個，更佳為-NH-。p較佳為1或2。 In the case where -CH 2 - contained in the hydrocarbon group is substituted with at least one of -O-, -CO- and -NH-, the substitution of -CH 2 - is preferably -CO- and -NH- At least one, more preferably -NH-. p is preferably 1 or 2.

作為式（G-1a）所表示的化合物，例如可列舉下述式（1-1）～式（1-9）所表示的化合物。Examples of the compound represented by the formula (G-1a) include compounds represented by the following formulas (1-1) to (1-9).

[化2] [Chem 2]

若以化學名來示出式（G-1a）所表示的化合物的具體例，例如可列舉：巰基乙酸、2-巰基丙酸、3-巰基丙酸、3-巰基丁酸、4-巰基丁酸、巰基琥珀酸、巰基硬脂酸、巰基辛酸、4-巰基苯甲酸、2,3,5,6-四氟-4-巰基苯甲酸、L-半胱胺酸、N-乙醯基-L-半胱胺酸、3-巰基丙酸3-甲氧基丁酯、3-巰基-2-甲基丙酸等。其中，較佳為3-巰基丙酸、巰基琥珀酸。When specific examples of the compound represented by the formula (G-1a) are shown by chemical name, for example, mercaptoacetic acid, 2-mercaptopropionic acid, 3-mercaptopropionic acid, 3-mercaptobutyric acid, 4-mercaptobutyl Acid, mercaptosuccinic acid, mercaptostearic acid, mercaptooctanoic acid, 4-mercaptobenzoic acid, 2,3,5,6-tetrafluoro-4-mercaptobenzoic acid, L-cysteine, N-acetyl- L-cysteine, 3-methoxybutyl 3-mercaptopropionate, 3-mercapto-2-methylpropionate, etc. Among them, 3-mercaptopropionic acid and mercaptosuccinic acid are preferred.

化合物（G-1）的另一例為多元羧酸化合物，較佳為可列舉於所述式（G-1a）所表示的化合物中、式（G-1a）中的-SH經取代為羧基（-COOH）而成的化合物（G-1b）。Another example of the compound (G-1) is a polycarboxylic acid compound, preferably among the compounds represented by the formula (G-1a), wherein -SH in the formula (G-1a) is substituted with a carboxyl group ( -COOH) compound (G-1b).

作為化合物（G-1b），例如可列舉以下化合物。 琥珀酸、戊二酸、己二酸、八氟己二酸、壬二酸、十二烷二酸、十四烷二酸、十六烷二酸、十七烷二酸、十八烷二酸、十九烷二酸、十二氟辛二酸、3-乙基-3-甲基戊二酸、六氟戊二酸、反式-3-己烯二酸、癸二酸、十六氟癸二酸、乙炔二羧酸、反式-鳥頭酸、1,3-金剛烷二羧酸、雙環[2.2.2]辛烷-1,4-二羧酸、順式-4-環己烯-1,2-二羧酸、1,1-環丙烷二羧酸、1,1-環丁烷二羧酸、順式-1,3-環己烷二羧酸或反式-1,3-環己烷二羧酸、順式-1,4-環己烷二羧酸或反式-1,4-環己烷二羧酸、1,1-環戊烷二乙酸、1,2,3,4-環戊烷四羧酸、十氫-1,4-萘二羧酸、2,3-降冰片烷二羧酸、5-降冰片烯-2,3-二羧酸、鄰苯二甲酸、3-氟鄰苯二甲酸、間苯二甲酸、四氟間苯二甲酸、對苯二甲酸、四氟對苯二甲酸、2,5-二甲基對苯二甲酸、2,6-萘二羧酸、2,3-萘二羧酸、1,4-萘二羧酸、1,1'-二茂鐵二羧酸、2,2'-聯苯基二羧酸、4,4'-聯苯基二羧酸、2,5-呋喃二羧酸、二苯甲酮-2,4'-二羧酸一水合物、二苯甲酮-4,4'-二羧酸、2,3-吡嗪二羧酸、2,3-吡啶二羧酸、2,4-吡啶二羧酸、3,5-吡啶二羧酸、2,5-吡啶二羧酸、2,6-吡啶二羧酸、3,4-吡啶二羧酸、吡唑-3,5-二羧酸一水合物、4,4'-二苯乙烯二羧酸、蒽醌-2,3-二羧酸、4-(羧基甲基)苯甲酸、白屈菜酸一水合物、偶氮苯-4,4'-二羧酸、偶氮苯-3,3'-二羧酸、氯橋酸、1H-咪唑-4,5-二羧酸、2,2-雙(4-羧基苯基)六氟丙烷、1,10-雙(4-羧基苯氧基)癸烷、二丙基丙二酸、二硫代二乙醇酸、3,3'-二硫代二丙酸、4,4'-二硫代二丁酸、4,4'-二羧基二苯基醚、4,4'-二羧基二苯基碸、乙二醇雙(4-羧基苯基)醚、3,4-伸乙基二氧基噻吩-2,5-二羧酸、4,4'-亞異丙基二苯氧基乙酸、1,3-丙酮二羧酸、亞甲基二水楊酸、5,5'-硫代二水楊酸、三(2-羧基乙基)異氰脲酸酯、四氟琥珀酸、α,α,α',α'-四甲基-1,3-苯二丙酸、1,3,5-苯三羧酸等。 As a compound (G-1b), the following compounds are mentioned, for example. Succinic acid, glutaric acid, adipic acid, octafluoroadipic acid, azelaic acid, dodecanedioic acid, tetradecanedioic acid, hexadecanedioic acid, heptadecanedioic acid, octadecanedioic acid , nonadecanedioic acid, dodecafluorosuberic acid, 3-ethyl-3-methylglutaric acid, hexafluoroglutaric acid, trans-3-hexenedioic acid, sebacic acid, hexadecafluoro Sebacic acid, acetylenedicarboxylic acid, trans-ornithic acid, 1,3-adamantanedicarboxylic acid, bicyclo[2.2.2]octane-1,4-dicarboxylic acid, cis-4-cyclohexyl ene-1,2-dicarboxylic acid, 1,1-cyclopropanedicarboxylic acid, 1,1-cyclobutanedicarboxylic acid, cis-1,3-cyclohexanedicarboxylic acid or trans-1, 3-Cyclohexanedicarboxylic acid, cis-1,4-cyclohexanedicarboxylic acid or trans-1,4-cyclohexanedicarboxylic acid, 1,1-cyclopentanediacetic acid, 1,2 ,3,4-cyclopentane tetracarboxylic acid, decahydro-1,4-naphthalene dicarboxylic acid, 2,3-norbornane dicarboxylic acid, 5-norbornene-2,3-dicarboxylic acid, ortho Phthalic acid, 3-fluorophthalic acid, isophthalic acid, tetrafluoroisophthalic acid, terephthalic acid, tetrafluoroterephthalic acid, 2,5-dimethylterephthalic acid, 2, 6-naphthalene dicarboxylic acid, 2,3-naphthalene dicarboxylic acid, 1,4-naphthalene dicarboxylic acid, 1,1'-ferrocene dicarboxylic acid, 2,2'-biphenyl dicarboxylic acid, 4 ,4'-biphenyldicarboxylic acid, 2,5-furandicarboxylic acid, benzophenone-2,4'-dicarboxylic acid monohydrate, benzophenone-4,4'-dicarboxylic acid , 2,3-pyridinedicarboxylic acid, 2,3-pyridinedicarboxylic acid, 2,4-pyridinedicarboxylic acid, 3,5-pyridinedicarboxylic acid, 2,5-pyridinedicarboxylic acid, 2,6 -Pyridinedicarboxylic acid, 3,4-pyridinedicarboxylic acid, pyrazole-3,5-dicarboxylic acid monohydrate, 4,4'-stilbenedicarboxylic acid, anthraquinone-2,3-dicarboxylate acid, 4-(carboxymethyl)benzoic acid, chelidonic acid monohydrate, azobenzene-4,4'-dicarboxylic acid, azobenzene-3,3'-dicarboxylic acid, chlorobridge acid, 1H-imidazole-4,5-dicarboxylic acid, 2,2-bis(4-carboxyphenyl)hexafluoropropane, 1,10-bis(4-carboxyphenoxy)decane, dipropylmalonic acid , Dithiodiglycolic acid, 3,3'-dithiodipropionic acid, 4,4'-dithiodibutyric acid, 4,4'-dicarboxydiphenyl ether, 4,4'-di Carboxydiphenylene, ethylene glycol bis(4-carboxyphenyl) ether, 3,4-ethylenedioxythiophene-2,5-dicarboxylic acid, 4,4'-isopropylidene diphenyl Oxyacetic acid, 1,3-acetone dicarboxylic acid, methylene disalicylic acid, 5,5'-thiodisalicylic acid, tris(2-carboxyethyl)isocyanurate, tetrafluorosuccinate acid, α,α,α',α'-tetramethyl-1,3-benzenedipropionic acid, 1,3,5-benzenetricarboxylic acid, etc.

就提高半導體粒子（A）的穩定性及分散性、以及發光強度的觀點而言，化合物（G-1）的分子量較佳為3000以下，更佳為2500以下，進而佳為2000以下，進而更佳為1000以下，特佳為800以下，最佳為500以下。化合物（G-1）的分子量通常為100以上。From the viewpoint of improving the stability and dispersibility of the semiconductor particles (A), and the luminous intensity, the molecular weight of the compound (G-1) is preferably 3000 or less, more preferably 2500 or less, still more preferably 2000 or less, and still more preferably 2000 or less. The best is below 1000, the best is below 800, and the best is below 500. The molecular weight of the compound (G-1) is usually 100 or more.

所述分子量可為數量平均分子量，亦可為重量平均分子量。於該情況下，數量平均分子量及重量平均分子量分別為藉由凝膠滲透層析法（gel permeation chromatography，GPC）而測定的標準聚苯乙烯換算的數量平均分子量及重量平均分子量。The molecular weight may be a number average molecular weight or a weight average molecular weight. In this case, the number average molecular weight and the weight average molecular weight are respectively the number average molecular weight and the weight average molecular weight in terms of standard polystyrene measured by gel permeation chromatography (GPC).

於組成物包含化合物（G-1）的情況下，化合物（G-1）相對於組成物中的半導體粒子（A）的含量比以質量比計較佳為0.001以上且1以下，更佳為0.01以上且0.5以下，進而佳為0.02以上且0.45以下。若該含量比處於該範圍，則就提高半導體粒子（A）的穩定性及分散性、以及發光強度的觀點而言可能會有利。When the composition contains the compound (G-1), the content ratio of the compound (G-1) to the semiconductor particle (A) in the composition is preferably 0.001 to 1 in terms of mass ratio, more preferably 0.01 0.5 or more, and more preferably 0.02 or more and 0.45 or less. When the content ratio is in this range, it may be advantageous from the viewpoint of improving the stability and dispersibility of the semiconductor particles (A), and the luminous intensity.

於組成物包含化合物（G-1）及後述的樹脂（D）的情況下，關於組成物中的化合物（G-1）的含有率，就提高半導體粒子（A）的穩定性及分散性、以及發光強度的觀點而言，相對於組成物的固體成分的總量，較佳為0.1質量%以上且20質量%以下，更佳為0.2質量%以上且20質量%以下，進而佳為0.2質量%以上且10質量%以下，進而更佳為0.5質量%以上且10質量%以下，特佳為0.5質量%以上且8質量%以下。When the composition contains the compound (G-1) and the resin (D) described later, the stability and dispersibility of the semiconductor particles (A) are improved with respect to the content of the compound (G-1) in the composition, From the viewpoint of luminous intensity, relative to the total amount of solid content of the composition, it is preferably 0.1 mass % to 20 mass %, more preferably 0.2 mass % to 20 mass %, and still more preferably 0.2 mass % % or more and 10 mass % or less, more preferably 0.5 mass % or more and 10 mass % or less, particularly preferably 0.5 mass % or more and 8 mass % or less.

於組成物包含化合物（G-1）且不含後述的樹脂（D）的情況下，關於組成物中的化合物（G-1）的含有率，就提高半導體粒子（A）的穩定性及分散性、以及發光強度的觀點而言，相對於組成物的固體成分的總量，較佳為0.1質量%以上且40質量%以下，更佳為0.2質量%以上且35質量%以下，進而佳為0.2質量%以上且30質量%以下，進而更佳為0.5質量%以上且25質量%以下，特佳為0.5質量%以上且20質量%以下。When the composition contains the compound (G-1) and does not contain the resin (D) described later, the stability and dispersion of the semiconductor particles (A) are improved with respect to the content of the compound (G-1) in the composition From the viewpoint of properties and luminous intensity, it is preferably from 0.1 mass % to 40 mass %, more preferably from 0.2 mass % to 35 mass %, with respect to the total amount of solid content of the composition, and still more preferably 0.2% by mass to 30% by mass, more preferably 0.5% by mass to 25% by mass, most preferably 0.5% by mass to 20% by mass.

〔化合物（G-2）〕 化合物（G-2）為與化合物（G-1）不同的化合物，為包含聚烷二醇結構且於分子末端具有極性基的化合物。分子末端較佳為化合物（G-2）中、最長的碳鏈（碳鏈中的碳原子可經取代為氧原子等其他原子）的末端。 組成物可包含僅一種化合物（G-2），亦可包含兩種以上。組成物可包含化合物（G-1）或化合物（G-2），亦可包含化合物（G-1）及化合物（G-2）。 再者，包含聚烷二醇結構、且具有所述第一官能基及第二官能基的化合物屬於化合物（G-1）。 [Compound (G-2)] Compound (G-2) is a compound different from compound (G-1), and is a compound that includes a polyalkylene glycol structure and has a polar group at a molecular terminal. The molecular terminal is preferably the terminal of the longest carbon chain (carbon atoms in the carbon chain may be substituted with other atoms such as oxygen atoms) in the compound (G-2). The composition may contain only one kind of compound (G-2), or may contain two or more kinds thereof. The composition may contain compound (G-1) or compound (G-2), or may contain compound (G-1) and compound (G-2). Furthermore, a compound including a polyalkylene glycol structure and having the first functional group and the second functional group belongs to the compound (G-1).

聚烷二醇結構是指下述式所表示的結構（n為2以上的整數）。The polyalkylene glycol structure refers to a structure represented by the following formula (n is an integer of 2 or more).

[化3] 式中，R C為伸烷基，例如可列舉伸乙基、伸丙基等。 [Chem 3] In the formula, R C is an alkylene group, for example, an ethylene group, a propylene group, etc. are mentioned.

作為化合物（G-2）的具體例，可列舉下述式（G-2a）所表示的聚烷二醇系化合物。Specific examples of the compound (G-2) include polyalkylene glycol-based compounds represented by the following formula (G-2a).

[化4] [chemical 4]

式（G-2a）中，X為極性基，Y為一價基，Z C為二價基或三價基。n為2以上的整數。m為1或2。R C為伸烷基。 In formula (G-2a), X is a polar group, Y is a monovalent group, and Z C is a divalent or trivalent group. n is an integer of 2 or more. m is 1 or 2. R C is alkylene.

極性基X較佳為選自由硫醇基（-SH）、羧基（-COOH）及胺基（-NH 2）所組成的群組中的至少一種基。選自該群組中的極性基於提高對半導體粒子（A）的配位性方面可能會有利。其中，就提高半導體粒子（A）的穩定性及分散性、以及發光強度的觀點而言，極性基X更佳為選自由硫醇基及羧基所組成的群組中的至少一種基。 The polar group X is preferably at least one group selected from the group consisting of a thiol group (—SH), a carboxyl group (—COOH) and an amine group (—NH 2 ). The polarity selected from this group may be advantageous in terms of improving coordination to the semiconductor particle (A). Among them, the polar group X is more preferably at least one group selected from the group consisting of a thiol group and a carboxyl group from the viewpoint of improving the stability and dispersibility of the semiconductor particle (A), and the luminous intensity.

基Y為一價基。基Y並無特別限制，可列舉可具有取代基（N、O、S、鹵素原子等）的一價烴基。該烴基中所含的-CH 2-可經-O-、-S-、-C(=O)-、-C(=O)-O-、-O-C(=O)-、-C(=O)-NH-、-NH-等取代。所述烴基的碳數例如為1以上且12以下。該烴基亦可具有不飽和鍵。 The group Y is a monovalent group. The group Y is not particularly limited, and examples thereof include monovalent hydrocarbon groups which may have substituents (N, O, S, halogen atoms, etc.). The -CH 2 - contained in the hydrocarbon group can be modified by -O-, -S-, -C(=O)-, -C(=O)-O-, -OC(=O)-, -C(= O)-NH-, -NH- and other substitutions. The carbon number of the hydrocarbon group is, for example, 1 or more and 12 or less. This hydrocarbon group may have an unsaturated bond.

作為基Y，可列舉：具有直鏈狀、分支鏈狀或環狀結構的碳數1以上且12以下的烷基；具有直鏈狀、分支鏈狀或環狀結構的碳數1以上且12以下的烷氧基等。該烷基及烷氧基的碳數較佳為1以上且8以下，更佳為1以上且6以下，進而佳為1以上且4以下。該烷基及烷氧基中所含的-CH 2-可經-O-、-S-、-C(=O)-、-C(=O)-O-、-O-C(=O)-、-C(=O)-NH-、-NH-等取代。其中，基Y較佳為碳數為1以上且4以下的直鏈狀或分支鏈狀的烷氧基，更佳為碳數為1以上且4以下的直鏈狀的烷氧基。 Examples of the group Y include: an alkyl group having 1 to 12 carbon atoms having a linear, branched, or cyclic structure; and an alkyl group having 1 to 12 carbon atoms having a linear, branched, or cyclic structure. The following alkoxy groups, etc. The number of carbon atoms in the alkyl group and the alkoxy group is preferably from 1 to 8, more preferably from 1 to 6, still more preferably from 1 to 4. The -CH 2 - contained in the alkyl and alkoxy groups can be modified by -O-, -S-, -C(=O)-, -C(=O)-O-, -OC(=O)- , -C(=O)-NH-, -NH- and other substitutions. Among them, the group Y is preferably a linear or branched alkoxy group having 1 to 4 carbon atoms, more preferably a linear alkoxy group having 1 to 4 carbon atoms.

基Y可包含極性基。作為該極性基，可列舉選自由硫醇基（-SH）、羧基（-COOH）及胺基（-NH 2）所組成的群組中的至少一種基。其中，如上所述，包含聚烷二醇結構、且具有所述第一官能基及第二官能基的化合物屬於化合物（G-1）。該極性基較佳為配置於基Y的末端。 The group Y may contain polar groups. Examples of the polar group include at least one group selected from the group consisting of a thiol group (—SH), a carboxyl group (—COOH), and an amine group (—NH 2 ). Among them, as described above, the compound including the polyalkylene glycol structure and having the first functional group and the second functional group belongs to the compound (G-1). The polar group is preferably arranged at the end of the group Y.

基Z C為二價基或三價基。基Z C並無特別限制，可列舉可包含雜原子（N、O、S、鹵素原子等）的二價烴基或三價烴基。該烴基的碳數例如為1以上且24以下。該烴基亦可具有不飽和鍵。 The group Z C is a divalent group or a trivalent group. The group Z C is not particularly limited, and examples thereof include divalent or trivalent hydrocarbon groups that may contain heteroatoms (N, O, S, halogen atoms, etc.). The carbon number of the hydrocarbon group is, for example, 1 to 24. This hydrocarbon group may have an unsaturated bond.

為二價基的基Z C可列舉：具有直鏈狀、分支鏈狀或環狀結構的碳數1以上且24以下的伸烷基；具有直鏈狀、分支鏈狀或環狀結構的碳數1以上且24以下的伸烯基等。該烷基及伸烯基的碳數較佳為1以上且12以下，更佳為1以上且8以下，進而佳為1以上且4以下。該烷基及伸烯基中所含的-CH 2-可經-O-、-S-、-C(=O)-、-C(=O)-O-、-O-C(=O)-、-C(=O)-NH-、-NH-等取代。為三價基的基Z C的例子可列舉自所述為二價基的基Z C中除去一個氫原子而成的基。 The group Z C that is a divalent group includes: an alkylene group having a carbon number of 1 to 24 having a linear, branched, or cyclic structure; a carbon chain having a linear, branched, or cyclic structure An alkenylene group having a number of 1 or more and 24 or less, etc. The carbon number of the alkyl group and alkenylene group is preferably from 1 to 12, more preferably from 1 to 8, still more preferably from 1 to 4. The -CH 2 - contained in the alkyl and alkenyl groups can be modified by -O-, -S-, -C(=O)-, -C(=O)-O-, -OC(=O)- , -C(=O)-NH-, -NH- and other substitutions. Examples of the group Z C that is a trivalent group include groups obtained by removing one hydrogen atom from the above-mentioned group Z C that is a divalent group.

基Z C可具有分支結構。具有分支結構的基Z C亦可於與包含所述式（G-2a）所表示的聚烷二醇結構的分支鏈不同的分支鏈中，具有與所述式（G-2a）所表示的聚烷二醇結構不同的聚烷二醇結構。 The group Z C may have a branched structure. The group Z C having a branched structure may also have a branch chain represented by the formula (G-2a) in a branch chain different from the branch chain containing the polyalkylene glycol structure represented by the formula (G-2a). Polyalkylene glycol structures different in polyalkylene glycol structure.

其中，基Z C較佳為碳數為1以上且6以下的直鏈狀或分支鏈狀的伸烷基，更佳為碳數為1以上且4以下的直鏈狀的伸烷基。 Among them, the group Z C is preferably a linear or branched alkylene group having 1 to 6 carbon atoms, more preferably a linear alkylene group having 1 to 4 carbon atoms.

R C為伸烷基，較佳為碳數為1以上且6以下的直鏈狀或分支鏈狀的伸烷基，更佳為碳數為1以上且4以下的直鏈狀的伸烷基。 R C is an alkylene group, preferably a linear or branched alkylene group having 1 to 6 carbon atoms, more preferably a linear alkylene group having 1 to 4 carbon atoms .

式（G-2a）中的n為2以上的整數，較佳為2以上且540以下，更佳為2以上且120以下，進而佳為2以上且60以下。n in formula (G-2a) is an integer of 2 or more, preferably 2 or more and 540 or less, more preferably 2 or more and 120 or less, still more preferably 2 or more and 60 or less.

化合物（G-2）的分子量例如可為150以上且10000以下左右，就提高半導體粒子（A）的穩定性及分散性、以及發光強度的觀點而言，較佳為150以上且5000以下，更佳為150以上且4000以下。該分子量可為數量平均分子量，亦可為重量平均分子量。於該情況下，數量平均分子量及重量平均分子量分別為藉由GPC而測定的標準聚苯乙烯換算的數量平均分子量及重量平均分子量。The molecular weight of the compound (G-2) can be, for example, about 150 to 10000, and is preferably 150 to 5000 from the viewpoint of improving the stability and dispersibility of the semiconductor particles (A) and luminous intensity, and more preferably 150 to 5000. Preferably, it is not less than 150 and not more than 4000. The molecular weight may be a number average molecular weight or a weight average molecular weight. In this case, the number average molecular weight and the weight average molecular weight are respectively the number average molecular weight and weight average molecular weight of standard polystyrene conversion measured by GPC.

於組成物包含化合物（G-2）的情況下，化合物（G-2）相對於組成物中的半導體粒子（A）的含量比以質量比計較佳為0.001以上且2以下，更佳為0.01以上且1.5以下，進而佳為0.1以上且1以下。若該含量比處於該範圍，則就提高半導體粒子（A）的穩定性及分散性、以及發光強度的觀點而言可能會有利。When the composition contains the compound (G-2), the content ratio of the compound (G-2) to the semiconductor particle (A) in the composition is preferably 0.001 to 2 in terms of mass ratio, more preferably 0.01 Not less than 1.5, more preferably not less than 0.1 and not more than 1. When the content ratio is in this range, it may be advantageous from the viewpoint of improving the stability and dispersibility of the semiconductor particles (A), and the luminous intensity.

於組成物包含化合物（G-2）及後述的樹脂（D）的情況下，關於組成物中的化合物（G-2）的含有率，就提高半導體粒子（A）的穩定性及分散性、以及發光強度的觀點而言，相對於組成物的固體成分的總量，較佳為0.1質量%以上且40質量%以下，更佳為0.1質量%以上且20質量%以下，進而佳為1質量%以上且15質量%以下，進而更佳為2質量%以上且12質量%以下。When the composition contains the compound (G-2) and the resin (D) described later, the stability and dispersibility of the semiconductor particles (A) are improved, And from the viewpoint of luminous intensity, with respect to the total amount of solid content of the composition, it is preferably 0.1 mass % or more and 40 mass % or less, more preferably 0.1 mass % or more and 20 mass % or less, still more preferably 1 mass % % or more and 15 mass % or less, more preferably 2 mass % or more and 12 mass % or less.

於組成物包含化合物（G-2）且不含後述的樹脂（D）的情況下，關於組成物中的化合物（G-2）的含有率，就提高半導體粒子（A）的穩定性及分散性、以及發光強度的觀點而言，相對於組成物的固體成分的總量，較佳為0.1質量%以上且50質量%以下，更佳為0.1質量%以上且40質量%以下，進而佳為1質量%以上且30質量%以下，進而更佳為2質量%以上且20質量%以下。When the composition contains the compound (G-2) and does not contain the resin (D) described later, the stability and dispersion of the semiconductor particles (A) are improved with respect to the content of the compound (G-2) in the composition From the viewpoint of properties and luminous intensity, it is preferably 0.1% by mass to 50% by mass, more preferably 0.1% by mass to 40% by mass, and still more preferably 1 mass % or more and 30 mass % or less, More preferably, it is 2 mass % or more and 20 mass % or less.

於組成物包含有機配位體（G）的情況下，有機配位體（G）相對於組成物中的半導體粒子（A）的含量比以質量比計較佳為0.001以上且1以下，更佳為0.01以上且0.8以下，進而佳為0.02以上且0.5以下。若該含量比處於該範圍，則就提高半導體粒子（A）的穩定性及分散性、以及發光強度的觀點而言可能會有利。此處所述的有機配位體（G）的含量為組成物中所含的所有有機配位體的合計含量。When the composition contains an organic ligand (G), the content ratio of the organic ligand (G) to the semiconductor particle (A) in the composition is preferably 0.001 to 1, more preferably in terms of mass ratio It is not less than 0.01 and not more than 0.8, and more preferably not less than 0.02 and not more than 0.5. When the content ratio is in this range, it may be advantageous from the viewpoint of improving the stability and dispersibility of the semiconductor particles (A), and the luminous intensity. The content of the organic ligand (G) described here is the total content of all the organic ligands contained in the composition.

於組成物包含有機配位體（G）及後述的樹脂（D）的情況下，關於組成物中的有機配位體（G）的含有率，就提高半導體粒子（A）的穩定性及分散性、以及發光強度的觀點而言，相對於組成物的固體成分的總量，較佳為0.1質量%以上且40質量%以下，更佳為0.1質量%以上且20質量%以下，進而佳為1質量%以上且15質量%以下，進而更佳為2質量%以上且12質量%以下。In the case where the composition contains the organic ligand (G) and the resin (D) described later, the stability and dispersion of the semiconductor particles (A) are improved with respect to the content of the organic ligand (G) in the composition. From the viewpoint of properties and luminous intensity, it is preferably 0.1% by mass to 40% by mass, more preferably 0.1% by mass to 20% by mass, and still more preferably 1 mass % or more and 15 mass % or less, More preferably, it is 2 mass % or more and 12 mass % or less.

於組成物包含有機配位體（G）且不含後述的樹脂（D）的情況下，關於組成物中的有機配位體（G）的含有率，就提高半導體粒子（A）的穩定性及分散性、以及發光強度的觀點而言，相對於組成物的固體成分的總量，較佳為0.1質量%以上且50質量%以下，更佳為0.1質量%以上且40質量%以下，進而佳為1質量%以上且30質量%以下，進而更佳為2質量%以上且20質量%以下。When the composition contains the organic ligand (G) and does not contain the resin (D) described later, the stability of the semiconductor particle (A) is improved with respect to the content of the organic ligand (G) in the composition From the viewpoint of dispersibility and luminous intensity, it is preferably 0.1 mass % or more and 50 mass % or less, more preferably 0.1 mass % or more and 40 mass % or less with respect to the total amount of solid content of the composition, and further Preferably, it is 1 mass % or more and 30 mass % or less, More preferably, it is 2 mass % or more and 20 mass % or less.

於組成物包含有機配位體（G）及後述的樹脂（D）的情況下，關於組成物中的半導體粒子（A）及有機配位體（G）的合計含有率，就提高半導體粒子（A）的穩定性及分散性、以及發光強度的觀點而言，相對於組成物的固體成分的總量，較佳為10質量%以上且75質量%以下，更佳為12質量%以上且70質量%以下，進而佳為15質量%以上且65質量%以下。When the composition contains an organic ligand (G) and a resin (D) described later, the total content of the semiconductor particles (A) and the organic ligand (G) in the composition increases the semiconductor particles ( From the viewpoint of the stability and dispersibility of A) and the luminous intensity, it is preferably 10 mass % or more and 75 mass % or less, more preferably 12 mass % or more and 70 mass % with respect to the total amount of solid content of the composition. % by mass or less, more preferably not less than 15% by mass and not more than 65% by mass.

於組成物包含有機配位體（G）且不含後述的樹脂（D）的情況下，關於組成物中的半導體粒子（A）及有機配位體（G）的合計含有率，就提高半導體粒子（A）的穩定性及分散性、以及發光強度的觀點而言，相對於組成物的固體成分的總量，較佳為10質量%以上且95質量%以下，更佳為15質量%以上且90質量%以下，進而佳為20質量%以上且80質量%以下。In the case where the composition contains the organic ligand (G) and does not contain the resin (D) described later, the semiconductor particles (A) and the organic ligand (G) in the total content of the composition can be increased. From the viewpoint of the stability and dispersibility of the particles (A), and the luminous intensity, it is preferably at least 10% by mass and at most 95% by mass, more preferably at least 15% by mass, based on the total amount of solids in the composition. And 90 mass % or less, More preferably, it is 20 mass % or more and 80 mass % or less.

[3]發光性有機化合物（B） 組成物一併包含半導體粒子（A）以及發光性有機化合物（B）。藉此，可提高發光強度。另外，藉此，於獲得具有相同發光強度的膜時，可降低該膜的厚度。 作為組成物中所含的發光性有機化合物（B），可使用作為有機發光體而已知的化合物。作為有機發光體，可列舉有機螢光體。有機螢光體可為高分子化合物（聚合物），亦可為低分子化合物。組成物可包含一種或兩種以上的發光性有機化合物（B）。 [3] Luminescent organic compound (B) The composition includes semiconductor particles (A) and a light-emitting organic compound (B). Thereby, the luminous intensity can be increased. In addition, by this, when obtaining a film having the same luminous intensity, the thickness of the film can be reduced. As the light-emitting organic compound (B) contained in the composition, compounds known as organic light-emitting bodies can be used. Examples of the organic luminescent body include organic phosphors. The organic phosphor can be a high-molecular compound (polymer) or a low-molecular compound. The composition may contain one kind or two or more kinds of light-emitting organic compounds (B).

作為有機螢光體的所述高分子化合物例如可列舉日本專利特開2008-133346號公報、國際公開第2004/060970號、國際公開第2012/153083號及「化學評論（Chem. Rev.）」（第109卷，897-1091頁（2009年））等中所記載的高分子化合物（共軛系高分子）。Examples of the polymer compound as the organic phosphor include Japanese Patent Application Laid-Open No. 2008-133346, International Publication No. 2004/060970, International Publication No. 2012/153083, and "Chem. Rev." (Volume 109, pages 897-1091 (2009)) and other polymer compounds (conjugated polymers).

作為有機螢光體的所述高分子化合物中所含的構成單元例如可列舉：伸苯基、萘二基、芴二基、菲二基、二氫菲二基、蒽二基及芘二基等伸芳基；自芳香族胺中除去兩個氫原子而成的基等芳香族胺殘基；以及咔唑二基、啡噁嗪二基及啡噻嗪二基等二價雜環基，該些基可具有取代基（作為該取代基，例如可列舉烷基、烷氧基及芳基等）。即，作為有機螢光體的所述高分子化合物較佳為包含可具有取代基的伸芳基、可具有取代基的芳香族胺殘基及可具有取代基的二價雜環基中的至少一種基的高分子化合物，更佳為包含可具有取代基的伸芳基、與可具有取代基的芳香族胺殘基及可具有取代基的二價雜環基中的至少一種基的高分子化合物。Examples of structural units contained in the polymer compound of an organic phosphor include: phenylene, naphthalenediyl, fluorenediyl, phenanthrenediyl, dihydrophenanthrenediyl, anthracendiyl, and pyrenediyl Equal aryl groups; aromatic amine residues such as groups formed by removing two hydrogen atoms from aromatic amines; These groups may have a substituent (for example, an alkyl group, an alkoxy group, an aryl group, etc. are mentioned as this substituent). That is, the polymer compound as an organic phosphor preferably contains at least one of an optionally substituted aryl group, an optionally substituted aromatic amine residue, and an optionally substituted divalent heterocyclic group. A polymer compound of one group, more preferably a polymer comprising at least one of an aryl group which may have a substituent, an aromatic amine residue which may have a substituent, and a divalent heterocyclic group which may have a substituent compound.

於作為有機螢光體的所述高分子化合物包含伸芳基的情況下，該高分子化合物中所含的伸芳基的合計含量只要為發揮作為有機螢光體的功能的範圍即可。於作為有機螢光體的所述高分子化合物包含伸芳基的情況下，相對於該高分子化合物中所含的構成單元的合計含量，該高分子化合物中所含的伸芳基的合計含量例如為1莫耳%以上且100莫耳%以下，較佳為50莫耳%以上且99莫耳%以下，更佳為70莫耳%以上且98莫耳%以下，進而佳為90莫耳%以上且97莫耳%以下。When the polymer compound as an organic phosphor contains an aryl group, the total content of the aryl group contained in the polymer compound may be within a range that functions as an organic phosphor. When the polymer compound as an organic phosphor contains an aryl group, the total content of the aryl group contained in the polymer compound is relative to the total content of the structural units contained in the polymer compound For example, it is 1 mol% to 100 mol%, preferably 50 mol% to 99 mol%, more preferably 70 mol% to 98 mol%, and more preferably 90 mol% % or more and 97 mol% or less.

於作為有機螢光體的所述高分子化合物包含芳香族胺殘基及/或二價雜環基的情況下，作為有機螢光體的所述高分子化合物中所含的芳香族胺殘基及/或二價雜環基的合計含量只要為發揮作為有機螢光體的功能的範圍即可。於作為有機螢光體的所述高分子化合物包含芳香族胺殘基及/或二價雜環基的情況下，相對於該高分子化合物中所含的構成單元的合計含量，該高分子化合物中所含的芳香族胺殘基及/或二價雜環基的合計含量例如為1莫耳%以上且100莫耳%以下，較佳為1莫耳%以上且50莫耳%以下，更佳為2莫耳%以上且30莫耳%以下，進而佳為3莫耳%以上且10莫耳%以下。When the polymer compound as an organic phosphor contains an aromatic amine residue and/or a divalent heterocyclic group, the aromatic amine residue contained in the polymer compound as an organic phosphor And/or the total content of the divalent heterocyclic group should just be the range which exhibits the function as an organic phosphor. When the polymer compound as an organic phosphor contains an aromatic amine residue and/or a divalent heterocyclic group, the polymer compound is The total content of aromatic amine residues and/or divalent heterocyclic groups contained in is, for example, not less than 1 mol% and not more than 100 mol%, preferably not less than 1 mol% and not more than 50 mol%. It is preferably at least 2 mol % and at most 30 mol %, more preferably at least 3 mol % and not more than 10 mol %.

於作為有機螢光體的所述高分子化合物中，作為伸芳基，例如可列舉下述所示的構成單元M1、構成單元M2、構成單元M3、構成單元M5及構成單元M7。另外，於作為有機螢光體的所述高分子化合物中，作為芳香族胺殘基，例如可列舉構成單元M6。另外，於作為有機螢光體的所述高分子化合物中，作為二價雜環基，例如可列舉構成單元M4。In the polymer compound as an organic phosphor, examples of the arylylene group include the following structural unit M1, structural unit M2, structural unit M3, structural unit M5, and structural unit M7. In addition, in the polymer compound as an organic phosphor, examples of the aromatic amine residue include the structural unit M6. In addition, in the polymer compound that is an organic phosphor, examples of the divalent heterocyclic group include the structural unit M4.

作為有機螢光體的所述高分子化合物具體而言可列舉以下的高分子化合物（共軛系高分子）。 含有構成單元M1、構成單元M2、構成單元M3以及構成單元M4的高分子化合物（構成單元的含有比率以莫耳比計例如為M1/M2/M3/M4=50/22.5/22.5/5）。 含有構成單元M1、構成單元M2以及構成單元M4的高分子化合物（構成單元的含有比率以莫耳比計例如為M1/M2/M4=50/45/5）。 含有構成單元M3、構成單元M2以及構成單元M4的高分子化合物（構成單元的含有比率以莫耳比計例如為M3/M2/M4=50/45/5）。 含有構成單元M1、構成單元M3、構成單元M5以及構成單元M6的高分子化合物（構成單元的含有比率以莫耳比計例如為M1/M3/M5/M6=50/35/10/5）。 含有構成單元M1、構成單元M7、構成單元M3以及構成單元M4的高分子化合物（構成單元的含有比率以莫耳比計例如為M1/M3/M5/M6=50/22.5/20.5/7）。 The polymer compound as the organic phosphor specifically includes the following polymer compounds (conjugated polymers). A polymer compound containing the constituent unit M1, the constituent unit M2, the constituent unit M3, and the constituent unit M4 (the content ratio of the constituent units is M1/M2/M3/M4=50/22.5/22.5/5 in molar ratio, for example). A polymer compound containing the constitutional unit M1, the constitutional unit M2, and the constitutional unit M4 (the content ratio of the constitutional units is M1/M2/M4=50/45/5 in molar ratio, for example). A polymer compound containing the constitutional unit M3, the constitutional unit M2, and the constitutional unit M4 (the content ratio of the constitutional units is, for example, M3/M2/M4=50/45/5 in molar ratio). A polymer compound containing the constituent unit M1, the constituent unit M3, the constituent unit M5, and the constituent unit M6 (the content ratio of the constituent units is M1/M3/M5/M6=50/35/10/5 in molar ratio, for example). A polymer compound containing the constituent unit M1, the constituent unit M7, the constituent unit M3, and the constituent unit M4 (the content ratio of the constituent units is M1/M3/M5/M6=50/22.5/20.5/7 in molar ratio, for example).

[化5] [化6] [chemical 5] [chemical 6]

作為有機螢光體的所述低分子化合物例如可列舉：分別由下述通式表示的、[a]雙吡咯亞甲基系化合物、[b]氧雜蒽系化合物、[c]對苯二甲酸系化合物、[d]芳基吲哚系化合物、[e]矽交聯芴系化合物、[f]紅螢烯系化合物、[g]苝系化合物、[h]噁二唑系化合物或噻二唑系化合物、[i]苯磺酸系化合物等。Examples of the low-molecular-weight compounds of organic phosphors include: [a] bispyrromethene compounds, [b] xanthene compounds, and [c] terephthalate compounds represented by the following general formulas: Formic acid-based compounds, [d] arylindole-based compounds, [e] silicon-crosslinked fluorene-based compounds, [f] rubrene-based compounds, [g] perylene-based compounds, [h] oxadiazole-based compounds, or thiophene-based compounds Oxadiazole-based compounds, [i]benzenesulfonic acid-based compounds, and the like.

[化7] [化8] [化9] [chemical 7] [chemical 8] [chemical 9]

於式[a]～式[i]中，R分別獨立地表示氫原子或一價有機基。於式[c]中，X表示例如鹵素原子、烷氧基、矽氧基或一價有機基。於式[d]中，X表示例如Si。於式[h]中，X表示例如O或S。In formula [a] - formula [i], R each independently represents a hydrogen atom or a monovalent organic group. In formula [c], X represents, for example, a halogen atom, an alkoxy group, a siloxy group, or a monovalent organic group. In formula [d], X represents, for example, Si. In formula [h], X represents, for example, O or S.

發光性有機化合物（B）較佳為能量轉移型發光性有機化合物。即，發光性有機化合物（B）較佳為具有如下性質：可使藉由吸光而獲得的能量的至少一部分轉移至存在於組成物或膜中的附近的半導體粒子（A）。發光性有機化合物（B）更佳為具有所述性質、且自身不發光或者幾乎不發光。The light emitting organic compound (B) is preferably an energy transfer type light emitting organic compound. That is, the light-emitting organic compound (B) preferably has a property of being able to transfer at least a part of energy obtained by light absorption to semiconductor particles (A) present in the vicinity of the composition or film. The light-emitting organic compound (B) more preferably has the above-mentioned properties and does not emit light or hardly emits light by itself.

藉由一併包含半導體粒子（A）以及發光性有機化合物（B）的組成物，於對該組成物或由其形成的膜照射紫外光或可見光（例如藍色光）等激發光時，發光性有機化合物（B）可吸收僅藉由半導體粒子（A）而無法完全吸收的激發光。藉此，可提高激發光的利用效率。另外，可抑制自組成物或膜射出的激發光的洩漏。再者，發光性有機化合物（B）藉由吸光而獲得的能量的至少一部分轉移至半導體粒子（A），藉此基於半導體粒子（A）的發光增強，來自組成物或膜的總發光量增加，因此組成物或膜的發光強度提高。此時，於能量轉移有效率地發生、發光性有機化合物（B）自身不發光或者幾乎不發光的情況下，可確保半導體粒子（A）所示出的尖銳的發光光譜寬度（半峰全幅值）。With the composition including semiconductor particles (A) and luminescent organic compound (B), when the composition or the film formed therefrom is irradiated with excitation light such as ultraviolet light or visible light (such as blue light), the luminescence can be improved. The organic compound (B) can absorb excitation light that cannot be completely absorbed only by the semiconductor particle (A). Thereby, the utilization efficiency of excitation light can be improved. In addition, leakage of excitation light emitted from the composition or film can be suppressed. Furthermore, at least a part of the energy obtained by light absorption of the light-emitting organic compound (B) is transferred to the semiconductor particle (A), whereby the light emission from the semiconductor particle (A) is enhanced, and the total amount of light emission from the composition or film is increased. , so the luminescence intensity of the composition or film is improved. In this case, when energy transfer occurs efficiently and the light-emitting organic compound (B) itself does not emit light or hardly emits light, the sharp emission spectrum width (full width at half maximum) shown by the semiconductor particle (A) can be ensured. value).

就提高激發光的吸收效率的觀點而言，發光性有機化合物（B）於其吸光光譜中較佳為具有極大波長為350 nm以上且550 nm以下的吸光波峰，更佳為具有極大波長為360 nm以上且520 nm以下的吸光波峰。另外，就提高激發光的吸收效率的觀點而言，發光性有機化合物（B）於400 nm以上且500 nm以下的波長區域具有吸收。發光性有機化合物（B）的吸光光譜可依照後述的實施例一欄中記載的測定方法來測定。From the viewpoint of improving the absorption efficiency of excitation light, the light-emitting organic compound (B) preferably has an absorption peak with a maximum wavelength of 350 nm to 550 nm in its absorption spectrum, and more preferably has a maximum wavelength of 360 nm. Absorption peaks above 520 nm and below 520 nm. In addition, from the viewpoint of improving the absorption efficiency of excitation light, the light-emitting organic compound (B) has absorption in a wavelength range of 400 nm to 500 nm. The absorption spectrum of the light-emitting organic compound (B) can be measured in accordance with the measurement method described in the section of Examples described later.

於一個實施形態中，組成物包含發光性有機化合物（B-1）作為發光性有機化合物（B），該發光性有機化合物（B-1）於其發光光譜中具有較佳為極大波長為450 nm以上且550 nm以下、更佳為450 nm以上且520 nm以下、進而佳為450 nm以上且500 nm以下的發光波峰。發光性有機化合物（B）的發光光譜可依照後述的實施例一欄中記載的測定方法來測定。In one embodiment, the composition includes a light-emitting organic compound (B-1) as the light-emitting organic compound (B), and the light-emitting organic compound (B-1) preferably has a maximum wavelength of 450 nm to 550 nm, more preferably 450 nm to 520 nm, and still more preferably 450 nm to 500 nm. The emission spectrum of the light-emitting organic compound (B) can be measured in accordance with the measurement method described in the section of Examples described later.

於一個實施形態中，就提高所述能量轉移的效率、提高發光強度的觀點而言，組成物包含下述半導體粒子（A-1）以及發光性有機化合物（B-1）。 半導體粒子（A-1）：於吸光光譜中，較佳為具有極大波長為450 nm以上且550 nm以下的吸光波峰，更佳為具有極大波長為450 nm以上且550 nm以下的吸光波峰且於500 nm以下的波長區域具有吸收。另外，較佳為於吸光光譜中具有極大波長為460 nm以上且530 nm以下的吸光波峰。 發光性有機化合物（B-1）：於發光光譜中具有較佳為極大波長為450 nm以上且550 nm以下、更佳為450 nm以上且520 nm以下、進而佳為450 nm以上且500 nm以下的發光波峰。 就提高所述能量轉移的效率、提高發光強度的觀點而言，發光性有機化合物（B-1）所具有的所述發光波峰的極大波長較佳為小於半導體粒子（A-1）所具有的所述吸光波峰的極大波長。 In one embodiment, the composition includes the following semiconductor particles (A-1) and a light-emitting organic compound (B-1) from the viewpoint of improving the efficiency of the energy transfer and increasing the luminous intensity. Semiconductor particle (A-1): In the light absorption spectrum, it is preferable to have an absorption peak with a maximum wavelength of 450 nm to 550 nm, and more preferably to have an absorption peak with a maximum wavelength of 450 nm to 550 nm. Absorption occurs in the wavelength region below 500 nm. In addition, it is preferable to have an absorption peak having a maximum wavelength of not less than 460 nm and not more than 530 nm in the absorption spectrum. Luminescent organic compound (B-1): in the emission spectrum, it has a maximum wavelength of preferably not less than 450 nm and not more than 550 nm, more preferably not less than 450 nm and not more than 520 nm, still more preferably not less than 450 nm and not more than 500 nm glowing peaks. From the viewpoint of improving the energy transfer efficiency and increasing the luminous intensity, the maximum wavelength of the luminescent peak possessed by the luminescent organic compound (B-1) is preferably smaller than that possessed by the semiconductor particle (A-1). The maximum wavelength of the absorption peak.

於其他實施形態中，組成物包含發光性有機化合物（B-2）作為發光性有機化合物（B），該發光性有機化合物（B-2）於其發光光譜中具有較佳為極大波長為480 nm以上且580 nm以下、更佳為480 nm以上且550 nm以下、進而佳為480 nm以上且530 nm以下的發光波峰。In other embodiments, the composition includes a light-emitting organic compound (B-2) as the light-emitting organic compound (B), and the light-emitting organic compound (B-2) preferably has a maximum wavelength of 480 nm to 580 nm, more preferably 480 nm to 550 nm, and still more preferably 480 nm to 530 nm.

於其他實施形態中，就提高所述能量轉移的效率、提高發光強度的觀點而言，組成物包含下述半導體粒子（A-2）以及發光性有機化合物（B-2）。 半導體粒子（A-2）：於吸光光譜中，較佳為具有極大波長為550 nm以上且650 nm以下的吸光波峰，更佳為具有極大波長為550 nm以上且650 nm以下的吸光波峰且於600 nm以下的波長區域具有吸收。另外，較佳為於吸光光譜中具有極大波長為560 nm以上且630 nm以下的吸光波峰。 發光性有機化合物（B-2）：於發光光譜中具有較佳為極大波長為480 nm以上且580 nm以下、更佳為480 nm以上且550 nm以下、進而佳為480 nm以上且530 nm以下的發光波峰。 就提高所述能量轉移的效率、提高發光強度的觀點而言，發光性有機化合物（B-2）所具有的所述發光波峰的極大波長較佳為小於半導體粒子（A-2）所具有的所述吸光波峰的極大波長。 In another embodiment, the composition includes the following semiconductor particles (A-2) and a light-emitting organic compound (B-2) from the viewpoint of improving the efficiency of the energy transfer and increasing the luminous intensity. Semiconductor particle (A-2): In the light absorption spectrum, preferably has an absorption peak with a maximum wavelength of 550 nm to 650 nm, more preferably has an absorption peak with a maximum wavelength of 550 nm to 650 nm and is within Absorption occurs in the wavelength region below 600 nm. In addition, it is preferable to have an absorption peak with a maximum wavelength of 560 nm or more and 630 nm or less in the absorption spectrum. Luminescent organic compound (B-2): In the emission spectrum, it has a maximum wavelength of preferably not less than 480 nm and not more than 580 nm, more preferably not less than 480 nm and not more than 550 nm, still more preferably not less than 480 nm and not more than 530 nm glowing peaks. From the viewpoint of improving the energy transfer efficiency and increasing the luminous intensity, the maximum wavelength of the luminescent peak possessed by the luminescent organic compound (B-2) is preferably smaller than that possessed by the semiconductor particle (A-2). The maximum wavelength of the absorption peak.

於組成物包含後述的樹脂（D）的情況下，相對於組成物的固體成分的總量，組成物中的發光性有機化合物（B）的含有率例如為0.001質量%以上且1質量%以下，就提高發光強度的觀點而言，較佳為0.0015質量%以上且0.5質量%以下，更佳為0.002質量%以上且0.4質量%以下，進而佳為0.002質量%以上且0.3質量%以下。 於組成物不含後述的樹脂（D）的情況下，相對於組成物的固體成分的總量，組成物中的發光性有機化合物（B）的含有率例如為5質量%以上且70質量%以下，較佳為10質量%以上且60質量%以下，更佳為15質量%以上且50質量%以下，進而佳為20質量%以上且45質量%以下，進而更佳為25質量%以上且40質量%以下。 When the composition contains a resin (D) described later, the content of the light-emitting organic compound (B) in the composition is, for example, 0.001% by mass or more and 1% by mass or less with respect to the total solid content of the composition. , from the viewpoint of increasing the luminous intensity, it is preferably 0.0015 mass % or more and 0.5 mass % or less, more preferably 0.002 mass % or more and 0.4 mass % or less, and still more preferably 0.002 mass % or more and 0.3 mass % or less. When the composition does not contain the resin (D) described later, the content of the light-emitting organic compound (B) in the composition is, for example, 5% by mass or more and 70% by mass relative to the total amount of solid content of the composition. Below, preferably 10 mass % or more and 60 mass % or less, more preferably 15 mass % or more and 50 mass % or less, more preferably 20 mass % or more and 45 mass % or less, still more preferably 25 mass % or more and 40% by mass or less.

於組成物包含後述的樹脂（D）的情況下，相對於半導體粒子（A）100質量份，組成物中的發光性有機化合物（B）的含量例如為0.001質量份以上且1質量份以下，就提高發光強度的觀點而言，較佳為0.002質量份以上且0.8質量份以下，更佳為0.003質量份以上且0.5質量份以下，進而佳為0.005質量份以上且0.4質量份以下。於組成物包含後述的樹脂（D）的情況下，相對於半導體粒子（A）及有機配位體（G）的合計100質量份，組成物中的發光性有機化合物（B）的含量例如為0.001質量份以上且1質量份以下，就提高發光強度的觀點而言，較佳為0.002質量份以上且0.8質量份以下，更佳為0.003質量份以上且0.5質量份以下，進而佳為0.005質量份以上且0.3質量份以下。When the composition contains a resin (D) described later, the content of the light-emitting organic compound (B) in the composition is, for example, 0.001 to 1 part by mass with respect to 100 parts by mass of the semiconductor particles (A), From the viewpoint of increasing the luminous intensity, it is preferably from 0.002 to 0.8 parts by mass, more preferably from 0.003 to 0.5 parts by mass, still more preferably from 0.005 to 0.4 parts by mass. When the composition contains a resin (D) described later, the content of the light-emitting organic compound (B) in the composition is, for example, 0.001 mass part or more and 1 mass part or less, from the viewpoint of improving luminous intensity, preferably 0.002 mass part or more and 0.8 mass part or less, more preferably 0.003 mass part or more and 0.5 mass part or less, still more preferably 0.005 mass part Part or more and 0.3 mass part or less.

於組成物不含後述的樹脂（D）的情況下，相對於半導體粒子（A）100質量份，組成物中的發光性有機化合物（B）的含量例如為12質量份以上且150質量份以下，就提高發光強度的觀點而言，較佳為20質量份以上且100質量份以下，更佳為25質量份以上且90質量份以下，進而佳為30質量份以上且80質量份以下。於組成物不含後述的樹脂（D）的情況下，相對於半導體粒子（A）及有機配位體（G）的合計100質量份，組成物中的發光性有機化合物（B）的含量例如為10質量份以上且100質量份以下，就提高發光強度的觀點而言，較佳為15質量份以上且90質量份以下，更佳為20質量份以上且80質量份以下，進而佳為30質量份以上且75質量份以下。When the composition does not contain the resin (D) described later, the content of the light-emitting organic compound (B) in the composition is, for example, not less than 12 parts by mass and not more than 150 parts by mass with respect to 100 parts by mass of the semiconductor particles (A). , from the viewpoint of improving the luminous intensity, it is preferably 20 to 100 parts by mass, more preferably 25 to 90 parts by mass, and still more preferably 30 to 80 parts by mass. When the composition does not contain the resin (D) described later, the content of the light-emitting organic compound (B) in the composition is, for example, It is 10 parts by mass or more and 100 parts by mass or less, from the viewpoint of improving luminous intensity, it is preferably 15 parts by mass or more and 90 parts by mass or less, more preferably 20 parts by mass or more and 80 parts by mass or less, and more preferably 30 parts by mass or less. More than 75 parts by mass and less than or equal to 75 parts by mass.

於包含樹脂（D）的組成物中，在發光性有機化合物（B）的含量過大的情況下，發光性有機化合物（B）的所有量有時並未溶解於組成物中。該情況下，有可能會對膜物性造成不良影響。就該觀點而言，相對於半導體粒子（A）100質量份或半導體粒子（A）及有機配位體（G）的合計100質量份，包含樹脂（D）的組成物中的發光性有機化合物（B）的含量有時較佳為設為0.25質量份以下、進而0.2質量份以下。In the composition containing the resin (D), when the content of the light-emitting organic compound (B) is too large, the entire amount of the light-emitting organic compound (B) may not be dissolved in the composition. In this case, the film physical properties may be adversely affected. From this point of view, the light-emitting organic compound in the composition containing the resin (D) is 100 parts by mass of the semiconductor particle (A) or 100 parts by mass of the total of the semiconductor particle (A) and the organic ligand (G). The content of (B) may be preferably 0.25 parts by mass or less, and further 0.2 parts by mass or less.

[4]光散射劑（C） 組成物可進而包含光散射劑（C）。由該組成物形成的樹脂膜可顯示出光散射性。組成物可包含兩種以上的光散射劑（C）。就提高發光強度的觀點而言，組成物較佳為進而包含光散射劑（C）。 [4] Light scattering agent (C) The composition may further contain a light scattering agent (C). A resin film formed from this composition can exhibit light scattering properties. The composition may contain two or more kinds of light scattering agents (C). From the viewpoint of increasing the luminous intensity, the composition preferably further includes a light-scattering agent (C).

作為光散射劑（C），可列舉：金屬或金屬氧化物的粒子、玻璃粒子等無機粒子。作為金屬氧化物，可列舉TiO 2、SiO 2、BaTiO 3、ZnO等，就有效率地使光散射的方面而言，較佳為TiO 2的粒子。光散射劑（C）的粒徑例如為0.03 μm以上且20 μm以下左右，較佳為0.05 μm以上且1 μm以下，更佳為0.05 μm以上且0.5 μm以下。 Examples of the light-scattering agent (C) include inorganic particles such as metal or metal oxide particles and glass particles. Examples of metal oxides include TiO 2 , SiO 2 , BaTiO 3 , ZnO, and the like, and TiO 2 particles are preferred in terms of efficiently scattering light. The particle size of the light scattering agent (C) is, for example, about 0.03 μm to 20 μm, preferably 0.05 μm to 1 μm, more preferably 0.05 μm to 0.5 μm.

作為光散射劑（C），亦可使用利用分散劑預先將光散射劑分散於溶劑（J）的一部分或全部中而成的物質。作為分散劑，可使用市售品。作為市售品的例子，可列舉： 日本畢克化學（BYK-Chemie Japan）公司製造的迪斯帕畢克（DISPERBYK）-101、102、103、106、107、108、109、110、111、116、118、130、140、154、161、162、163、164、165、166、170、171、174、180、181、182、183、184、185、190、192、2000、2001、2020、2025、2050、2070、2095、2150、2155；ANTI-TERRA-U、U100、203、204、250；BYK-P104、P104S、P105、220S、6919；BYK-LPN6919、21116；蘭可迪莫（LACTIMON）、蘭可迪莫（LACTIMON）-WS；比酷曼（Bykumen）等； 日本路博潤（Lubrizol）公司製造的索努帕斯（SOLSPERSE）-3000、9000、13000、13240、13650、13940、16000、17000、18000、20000、21000、24000、26000、27000、28000、31845、32000、32500、32550、33500、32600、34750、35100、36600、38500、41000、41090、53095、55000、76500等； 巴斯夫（BASF）公司製造的艾夫卡（EFKA）-46、47、48、452、4008、4009、4010、4015、4020、4047、4050、4055、4060、4080、4400、4401、4402、4403、4406、4408、4300、4310、4320、4330、4340、450、451、453、4540、4550、4560、4800、5010、5065、5066、5070、7500、7554、1101、120、150、1501、1502、1503等； 味之素精密技術（Ajinomoto Fine-Techno）公司製造的阿吉斯帕（Ajisper）PA111、PB711、PB821、PB822、PB824等。 As the light-scattering agent (C), a light-scattering agent previously dispersed in a part or all of the solvent (J) with a dispersant can also be used. As a dispersant, a commercial item can be used. Examples of commercially available products include: DISPERBYK-101, 102, 103, 106, 107, 108, 109, 110, 111, 116, 118, 130, 140, 154, manufactured by BYK-Chemie Japan 161, 162, 163, 164, 165, 166, 170, 171, 174, 180, 181, 182, 183, 184, 185, 190, 192, 2000, 2001, 2020, 2025, 2050, 2070, 2095, 2150, 2155; ANTI-TERRA-U, U100, 203, 204, 250; BYK-P104, P104S, P105, 220S, 6919; BYK-LPN6919, 21116; LACTIMON, LACTIMON- WS; Bykumen et al.; SOLSPERSE manufactured by Lubrizol Japan-3000, 9000, 13000, 13240, 13650, 13940, 16000, 17000, 18000, 20000, 21000, 24000, 26000, 27000, 28000, 31845, 32000, 32500, 32550, 33500, 32600, 34750, 35100, 36600, 38500, 41000, 41090, 53095, 55000, 76500, etc.; EFKA manufactured by BASF - 46, 47, 48, 452, 4008, 4009, 4010, 4015, 4020, 4047, 4050, 4055, 4060, 4080, 4400, 4401, 4402, 4403, 4406, 4408, 4300, 4310, 4320, 4330, 4340, 450, 451, 453, 4540, 4550, 4560, 4800, 5010, 5065, 5066, 5070, 7500, 7554, 1101, 120, 150, 1501, 1502, 1503 etc.; Ajisper PA111, PB711, PB821, PB822, PB824, etc. manufactured by Ajinomoto Fine-Techno.

相對於組成物的固體成分的總量，組成物中的光散射劑（C）的含有率例如為0.001質量%以上且50質量%以下，就提高組成物或膜的光散射能力以及發光強度的觀點而言，較佳為1質量%以上且30質量%以下，更佳為2質量%以上且20質量%以下，進而佳為2質量%以上且15質量%以下，進而更佳為3質量%以上且10質量%以下。When the content of the light-scattering agent (C) in the composition is, for example, 0.001 mass % or more and 50 mass % or less with respect to the total amount of solid content of the composition, the light-scattering ability and luminous intensity of the composition or film are improved. From a viewpoint, it is preferably at least 1 mass % and at most 30 mass %, more preferably at least 2 mass % and at most 20 mass %, still more preferably at least 2 mass % and at most 15 mass %, still more preferably at least 3 mass % Above and below 10% by mass.

[5]樹脂（D） 組成物可進而包含樹脂（D）。就由組成物形成膜的觀點而言，組成物較佳為包含樹脂（D）。樹脂（D）可包含一種或兩種以上的樹脂。樹脂（D）為非發光性，與發光性有機化合物（B）有所區別。作為樹脂（D），可列舉以下的樹脂[K1]～樹脂[K4]等。 [5] Resin (D) The composition may further contain resin (D). From the viewpoint of forming a film from the composition, the composition preferably contains the resin (D). The resin (D) may contain one kind or two or more kinds of resins. The resin (D) is non-luminescent, and is distinguished from the luminescent organic compound (B). As resin (D), the following resin [K1] - resin [K4] etc. are mentioned.

樹脂[K1]：選自由不飽和羧酸及不飽和羧酸酐所組成的群組中的至少一種（a）（以下，亦稱為「（a）」）、和能夠與（a）共聚的單量體（c）（其中，與（a）不同）（以下，亦稱為「（c）」）的共聚物； 樹脂[K2]：使具有碳數2～4的環狀醚結構與乙烯性不飽和鍵的單量體（b）（以下，亦稱為「（b）」）、和（a）與（c）的共聚物反應而成的樹脂； 樹脂[K3]：使（a）和（b）與（c）的共聚物反應而成的樹脂； 樹脂[K4]：使（a）和（b）與（c）的共聚物反應，進而與羧酸酐反應而成的樹脂。 Resin [K1]: at least one (a) selected from the group consisting of unsaturated carboxylic acids and unsaturated carboxylic acid anhydrides (hereinafter, also referred to as "(a)"), and a monomer copolymerizable with (a) Copolymers of (c) (wherein, different from (a)) (hereinafter also referred to as "(c)"); Resin [K2]: Monomer (b) (hereinafter also referred to as "(b)") having a cyclic ether structure with 2 to 4 carbon atoms and an ethylenically unsaturated bond, and (a) and (c ) The resin formed by the reaction of the copolymer; Resin [K3]: a resin obtained by reacting a copolymer of (a) and (b) with (c); Resin [K4]: a resin obtained by reacting a copolymer of (a), (b) and (c), and further reacting with a carboxylic anhydride.

作為（a），例如可列舉：(甲基)丙烯酸、巴豆酸、鄰乙烯基苯甲酸、間乙烯基苯甲酸、對乙烯基苯甲酸等不飽和單羧酸； 馬來酸、富馬酸、檸康酸、中康酸、衣康酸、3-乙烯基鄰苯二甲酸、4-乙烯基鄰苯二甲酸、3,4,5,6-四氫鄰苯二甲酸、1,2,3,6-四氫鄰苯二甲酸、二甲基四氫鄰苯二甲酸、1,4-環己烯二羧酸等不飽和二羧酸； 甲基-5-降冰片烯-2,3-二羧酸、5-羧基雙環[2.2.1]庚-2-烯、5,6-二羧基雙環[2.2.1]庚-2-烯、5-羧基-5-甲基雙環[2.2.1]庚-2-烯、5-羧基-5-乙基雙環[2.2.1]庚-2-烯、5-羧基-6-甲基雙環[2.2.1]庚-2-烯、5-羧基-6-乙基雙環[2.2.1]庚-2-烯等含有羧基的雙環不飽和化合物； 馬來酸酐、檸康酸酐、衣康酸酐、3-乙烯基鄰苯二甲酸酐、4-乙烯基鄰苯二甲酸酐、3,4,5,6-四氫鄰苯二甲酸酐、1,2,3,6-四氫鄰苯二甲酸酐、二甲基四氫鄰苯二甲酸酐、5,6-二羧基雙環[2.2.1]庚-2-烯酐等不飽和二羧酸酐； 琥珀酸單〔2-(甲基)丙烯醯氧基乙基〕酯、鄰苯二甲酸單〔2-(甲基)丙烯醯氧基乙基〕酯等二元以上的多元羧酸的不飽和單〔(甲基)丙烯醯氧基烷基〕酯； 如(甲基)丙烯酸α-(羥基甲基)酯般的於同一分子中含有羥基及羧基的不飽和(甲基)丙烯酸酯等。 該些中，就共聚反應性等觀點而言，較佳為(甲基)丙烯酸、馬來酸酐等。 於本說明書中，(甲基)丙烯酸是指丙烯酸及/或甲基丙烯酸。於「(甲基)丙烯醯基」、「(甲基)丙烯酸酯」等中，亦同樣如此。 Examples of (a) include unsaturated monocarboxylic acids such as (meth)acrylic acid, crotonic acid, o-vinylbenzoic acid, m-vinylbenzoic acid, and p-vinylbenzoic acid; Maleic acid, fumaric acid, citraconic acid, mesaconic acid, itaconic acid, 3-vinylphthalic acid, 4-vinylphthalic acid, 3,4,5,6-tetrahydrophthalic acid Dicarboxylic acid, 1,2,3,6-tetrahydrophthalic acid, dimethyltetrahydrophthalic acid, 1,4-cyclohexene dicarboxylic acid and other unsaturated dicarboxylic acids; Methyl-5-norbornene-2,3-dicarboxylic acid, 5-carboxybicyclo[2.2.1]hept-2-ene, 5,6-dicarboxybicyclo[2.2.1]hept-2-ene, 5-carboxy-5-methylbicyclo[2.2.1]hept-2-ene, 5-carboxy-5-ethylbicyclo[2.2.1]hept-2-ene, 5-carboxy-6-methylbicyclo[ 2.2.1] Hept-2-ene, 5-carboxy-6-ethylbicyclo[2.2.1]hept-2-ene and other carboxyl-containing bicyclic unsaturated compounds; Maleic anhydride, citraconic anhydride, itaconic anhydride, 3-vinylphthalic anhydride, 4-vinylphthalic anhydride, 3,4,5,6-tetrahydrophthalic anhydride, 1, 2,3,6-tetrahydrophthalic anhydride, dimethyltetrahydrophthalic anhydride, 5,6-dicarboxybicyclo[2.2.1]hept-2-ene anhydride and other unsaturated dicarboxylic anhydrides; Unsaturated polycarboxylic acids with more than two valences such as mono[2-(meth)acryloxyethyl]succinate and mono[2-(meth)acryloxyethyl]phthalate Mono[(meth)acryloxyalkyl]esters; An unsaturated (meth)acrylate containing a hydroxyl group and a carboxyl group in the same molecule such as α-(hydroxymethyl)(meth)acrylate. Among these, (meth)acrylic acid, maleic anhydride, etc. are preferable from viewpoints, such as copolymerization reactivity. In this specification, (meth)acrylic acid means acrylic acid and/or methacrylic acid. The same applies to "(meth)acryl", "(meth)acrylate", and the like.

（b）例如為具有碳數2～4的環狀醚結構（例如，選自由氧雜環丙烷環、氧雜環丁烷環及四氫呋喃環所組成的群組中的至少一種）與乙烯性不飽和鍵的單量體。（b）較佳為具有碳數2～4的環狀醚結構與(甲基)丙烯醯氧基的單量體。(b) For example, a cyclic ether structure having 2 to 4 carbon atoms (for example, at least one selected from the group consisting of an oxirane ring, an oxetane ring, and a tetrahydrofuran ring) is not compatible with ethylenic A monomer of a saturated bond. (b) Preferably, it is a monomer which has a cyclic ether structure with 2-4 carbon atoms and a (meth)acryloyloxy group.

作為（b），例如可列舉：(甲基)丙烯酸縮水甘油酯、(甲基)丙烯酸β-甲基縮水甘油酯、(甲基)丙烯酸β-乙基縮水甘油酯、縮水甘油基乙烯基醚、鄰乙烯基苄基縮水甘油醚、間乙烯基苄基縮水甘油醚、對乙烯基苄基縮水甘油醚、α-甲基-鄰乙烯基苄基縮水甘油醚、α-甲基-間乙烯基苄基縮水甘油醚、α-甲基-對乙烯基苄基縮水甘油醚、2,3-雙(縮水甘油基氧基甲基)苯乙烯、2,4-雙(縮水甘油基氧基甲基)苯乙烯、2,5-雙(縮水甘油基氧基甲基)苯乙烯、2,6-雙(縮水甘油基氧基甲基)苯乙烯、2,3,4-三(縮水甘油基氧基甲基)苯乙烯、2,3,5-三(縮水甘油基氧基甲基)苯乙烯、2,3,6-三(縮水甘油基氧基甲基)苯乙烯、3,4,5-三(縮水甘油基氧基甲基)苯乙烯、2,4,6-三(縮水甘油基氧基甲基)苯乙烯等具有氧雜環丙烷環與乙烯性不飽和鍵的單量體； 3-甲基-3-甲基丙烯醯氧基甲基氧雜環丁烷、3-甲基-3-丙烯醯氧基甲基氧雜環丁烷、3-乙基-3-甲基丙烯醯氧基甲基氧雜環丁烷、3-乙基-3-丙烯醯氧基甲基氧雜環丁烷、3-甲基-3-甲基丙烯醯氧基乙基氧雜環丁烷、3-甲基-3-丙烯醯氧基乙基氧雜環丁烷、3-乙基-3-甲基丙烯醯氧基乙基氧雜環丁烷、3-乙基-3-丙烯醯氧基乙基氧雜環丁烷等具有氧雜環丁烷環與乙烯性不飽和鍵的單量體； 丙烯酸四氫糠基酯（例如，比斯克（Biscoat）V#150，大阪有機化學工業（股）製造）、甲基丙烯酸四氫糠基酯等具有四氫呋喃環與乙烯性不飽和鍵的單量體等。 就樹脂[K2]～樹脂[K4]的製造時的反應性高而不易殘存未反應的（b）的方面而言，作為（b），較佳為具有氧雜環丙烷環與乙烯性不飽和鍵的單量體。 Examples of (b) include: glycidyl (meth)acrylate, β-methylglycidyl (meth)acrylate, β-ethylglycidyl (meth)acrylate, glycidyl vinyl ether , o-vinylbenzyl glycidyl ether, m-vinylbenzyl glycidyl ether, p-vinylbenzyl glycidyl ether, α-methyl-o-vinylbenzyl glycidyl ether, α-methyl-m-vinyl Benzyl glycidyl ether, α-methyl-p-vinylbenzyl glycidyl ether, 2,3-bis(glycidyloxymethyl)styrene, 2,4-bis(glycidyloxymethyl) ) styrene, 2,5-bis(glycidyloxymethyl)styrene, 2,6-bis(glycidyloxymethyl)styrene, 2,3,4-tris(glycidyloxy methyl) styrene, 2,3,5-tris(glycidyloxymethyl)styrene, 2,3,6-tris(glycidyloxymethyl)styrene, 3,4,5 - Tris(glycidyloxymethyl)styrene, 2,4,6-tris(glycidyloxymethyl)styrene and other monomers with oxirane ring and ethylenically unsaturated bond; 3-Methyl-3-methacryloxymethyloxetane, 3-methyl-3-acryloxymethyloxetane, 3-ethyl-3-methylpropene Acyloxymethyloxetane, 3-ethyl-3-acryloxymethyloxetane, 3-methyl-3-methacryloxyethyloxetane , 3-methyl-3-acryloxyethyl oxetane, 3-ethyl-3-methacryloxyethyl oxetane, 3-ethyl-3-acryl Monomers with oxetane rings and ethylenically unsaturated bonds, such as oxyethyl oxetane; Tetrahydrofurfuryl acrylate (for example, Biscoat V#150, manufactured by Osaka Organic Chemical Industry Co., Ltd.), tetrahydrofurfuryl methacrylate and other monomers having a tetrahydrofuran ring and an ethylenically unsaturated bond wait. Resins [K2] to [K4] have high reactivity during production and unreacted (b) is less likely to remain, as (b), preferably have an oxirane ring and an ethylenically unsaturated resin. Singleton of keys.

作為（c），例如可列舉：(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸正丁酯、(甲基)丙烯酸第二丁酯、(甲基)丙烯酸第三丁酯、(甲基)丙烯酸2-乙基己酯、(甲基)丙烯酸十二基酯、(甲基)丙烯酸月桂基酯、(甲基)丙烯酸硬脂基酯、(甲基)丙烯酸環戊酯、(甲基)丙烯酸環己酯、(甲基)丙烯酸2-甲基環己酯、(甲基)丙烯酸三環[5.2.1.0 2,6]癸烷-8-基酯（於該技術領域中，作為慣用名而稱為「(甲基)丙烯酸二環戊烷基酯」；另外，有時稱為「(甲基)丙烯酸三環癸酯」）、(甲基)丙烯酸三環[5.2.1.0 2,6]癸烯-8-基酯（於該技術領域中，作為慣用名而稱為「(甲基)丙烯酸二環戊烯基酯」）、(甲基)丙烯酸二環戊烷基氧基乙酯、(甲基)丙烯酸異冰片基酯、(甲基)丙烯酸金剛烷基酯、(甲基)丙烯酸烯丙基酯、(甲基)丙烯酸炔丙基酯、(甲基)丙烯酸苯基酯、(甲基)丙烯酸萘基酯、(甲基)丙烯酸苄基酯等(甲基)丙烯酸酯； (甲基)丙烯酸2-羥基乙酯、(甲基)丙烯酸2-羥基丙酯等含羥基的(甲基)丙烯酸酯； 馬來酸二乙酯、富馬酸二乙酯、衣康酸二乙酯等二羧酸二酯； 雙環[2.2.1]庚-2-烯、5-甲基雙環[2.2.1]庚-2-烯、5-乙基雙環[2.2.1]庚-2-烯、5-羥基雙環[2.2.1]庚-2-烯、5-羥基甲基雙環[2.2.1]庚-2-烯、5-(2'-羥基乙基)雙環[2.2.1]庚-2-烯、5-甲氧基雙環[2.2.1]庚-2-烯、5-乙氧基雙環[2.2.1]庚-2-烯、5,6-二羥基雙環[2.2.1]庚-2-烯、5,6-二(羥基甲基)雙環[2.2.1]庚-2-烯、5,6-二(2'-羥基乙基)雙環[2.2.1]庚-2-烯、5,6-二甲氧基雙環[2.2.1]庚-2-烯、5,6-二乙氧基雙環[2.2.1]庚-2-烯、5-羥基-5-甲基雙環[2.2.1]庚-2-烯、5-羥基-5-乙基雙環[2.2.1]庚-2-烯、5-羥基甲基-5-甲基雙環[2.2.1]庚-2-烯、5-第三丁氧基羰基雙環[2.2.1]庚-2-烯、5-環己基氧基羰基雙環[2.2.1]庚-2-烯、5-苯氧基羰基雙環[2.2.1]庚-2-烯、5,6-雙(第三丁氧基羰基)雙環[2.2.1]庚-2-烯、5,6-雙(環己基氧基羰基)雙環[2.2.1]庚-2-烯等雙環不飽和化合物； N-苯基馬來醯亞胺、N-環己基馬來醯亞胺、N-苄基馬來醯亞胺、N-琥珀醯亞胺基-3-馬來醯亞胺苯甲酸酯、N-琥珀醯亞胺基-4-馬來醯亞胺丁酸酯、N-琥珀醯亞胺基-6-馬來醯亞胺己酸酯、N-琥珀醯亞胺基-3-馬來醯亞胺丙酸酯、N-(9-吖啶基)馬來醯亞胺等二羰基醯亞胺衍生物； 苯乙烯、α-甲基苯乙烯、間甲基苯乙烯、對甲基苯乙烯、乙烯基甲苯、對甲氧基苯乙烯、丙烯腈、甲基丙烯腈、氯乙烯、偏二氯乙烯、丙烯醯胺、甲基丙烯醯胺、乙酸乙烯基酯、1,3-丁二烯、異戊二烯、2,3-二甲基-1,3-丁二烯等。 該些中，就共聚反應性及樹脂（D）的耐熱性的觀點而言，較佳為苯乙烯、乙烯基甲苯、N-苯基馬來醯亞胺、N-環己基馬來醯亞胺、N-苄基馬來醯亞胺、雙環[2.2.1]庚-2-烯等。 Examples of (c) include methyl (meth)acrylate, ethyl (meth)acrylate, n-butyl (meth)acrylate, second-butyl (meth)acrylate, second-butyl (meth)acrylate, Tributyl, 2-ethylhexyl (meth)acrylate, lauryl (meth)acrylate, stearyl (meth)acrylate, (meth)acrylic acid Cyclopentyl ester, cyclohexyl (meth)acrylate, 2-methylcyclohexyl (meth)acrylate, tricyclo[5.2.1.0 2,6 ]decane-8-yl (meth)acrylate (in In this technical field, it is called "dicyclopentyl (meth)acrylate" as a common name; in addition, it is sometimes called "tricyclodecanyl (meth)acrylate"), tricyclodecanyl (meth)acrylate Cyclo[5.2.1.0 2,6 ]decen-8-yl ester (known as "dicyclopentenyl (meth)acrylate" as a common name in this technical field), dicyclopentenyl (meth)acrylate Cyclopentyloxyethyl ester, isobornyl (meth)acrylate, adamantyl (meth)acrylate, allyl (meth)acrylate, propargyl (meth)acrylate, ( (meth)acrylic acid esters such as phenyl methacrylate, naphthyl (meth)acrylate, benzyl (meth)acrylate; 2-hydroxyethyl (meth)acrylate, 2-hydroxyethyl (meth)acrylate -Hydroxyl-containing (meth)acrylic acid esters such as hydroxypropyl ester; dicarboxylic acid diesters such as diethyl maleate, diethyl fumarate, and diethyl itaconate; 2-ene, 5-methylbicyclo[2.2.1]hept-2-ene, 5-ethylbicyclo[2.2.1]hept-2-ene, 5-hydroxybicyclo[2.2.1]hept-2-ene , 5-hydroxymethylbicyclo[2.2.1]hept-2-ene, 5-(2'-hydroxyethyl)bicyclo[2.2.1]hept-2-ene, 5-methoxybicyclo[2.2.1 ]hept-2-ene, 5-ethoxybicyclo[2.2.1]hept-2-ene, 5,6-dihydroxybicyclo[2.2.1]hept-2-ene, 5,6-bis(hydroxymethyl base) bicyclo[2.2.1]hept-2-ene, 5,6-bis(2'-hydroxyethyl)bicyclo[2.2.1]hept-2-ene, 5,6-dimethoxybicyclo[2.2 .1]hept-2-ene, 5,6-diethoxybicyclo[2.2.1]hept-2-ene, 5-hydroxy-5-methylbicyclo[2.2.1]hept-2-ene, 5 -Hydroxy-5-ethylbicyclo[2.2.1]hept-2-ene, 5-hydroxymethyl-5-methylbicyclo[2.2.1]hept-2-ene, 5-tert-butoxycarbonylbicyclo [2.2.1]hept-2-ene, 5-cyclohexyloxycarbonylbicyclo[2.2.1]hept-2-ene, 5-phenoxycarbonylbicyclo[2.2.1]hept-2-ene, 5, 6-bis(tertiary butoxycarbonyl)bicyclo[2.2.1]hept-2-ene, 5,6-bis(cyclohexyloxycarbonyl)bicyclo[2.2.1]hept-2-ene and other bicyclic unsaturated Compounds; N-phenylmaleimide, N-cyclohexylmaleimide, N-benzylmaleimide, N-succinimido-3-maleimide benzoic acid Ester, N-succinimidyl-4-maleimide butyrate, N-succinimidyl-6-maleimide hexanoate, N-succinimidyl-3- Maleimide propionate, N-(9-acridyl)maleimide and other dicarbonyl imide derivatives; styrene, α-methylstyrene, m-methylstyrene, p-methylstyrene Styrene, vinyltoluene, p-methoxystyrene, acrylonitrile, methacrylonitrile, vinyl chloride, vinylidene chloride, acrylamide, methacrylamide, vinyl acetate, 1,3- Butadiene, isoprene, 2,3-dimethyl-1,3-butadiene, etc. Among these, styrene, vinyltoluene, N-phenylmaleimide, and N-cyclohexylmaleimide are preferable from the viewpoint of copolymerization reactivity and heat resistance of the resin (D). , N-benzylmaleimide, bicyclo[2.2.1]hept-2-ene, etc.

於構成樹脂[K1]的所有構成單元中，樹脂[K1]中源自各者的構成單元的比率較佳為： 源自（a）的構成單元：2莫耳%以上且60莫耳%以下， 源自（c）的構成單元：40莫耳%以上且98莫耳%以下， 更佳為： 源自（a）的構成單元：10莫耳%以上且50莫耳%以下， 源自（c）的構成單元：50莫耳%以上且90莫耳%以下。 若樹脂[K1]的構成單元的比率處於所述範圍，則存在組成物的保存穩定性及膜的耐溶劑性優異的傾向。 Among all the constituent units constituting the resin [K1], the ratio of constituent units derived from each in the resin [K1] is preferably: Constituent unit derived from (a): 2 mol% or more and 60 mol% or less, Constituent unit derived from (c): 40 mol% or more and 98 mol% or less, Even better: Constituent unit derived from (a): 10 mol% or more and 50 mol% or less, Structural unit derived from (c): 50 mol% or more and 90 mol% or less. When the ratio of the structural unit of resin [K1] exists in the said range, there exists a tendency for the storage stability of a composition and the solvent resistance of a film to be excellent.

樹脂[K1]例如可參考文獻「高分子合成的實驗法」（大津隆行著 化學同人發行所（股） 第1版第1次印刷 1972年3月1日發行）中記載的方法以及該文獻中記載的引用文獻而製造。For the resin [K1], for example, the method described in the document "Experimental Method for Polymer Synthesis" (Takayuki Otsu, Chemical Doujin Publishing Co., Ltd., first edition, first printing, March 1, 1972) and the method described in this document can be referred to. Manufactured from cited references.

具體而言，可列舉如下方法：將規定量的（a）及（c）、聚合起始劑以及溶劑等放入至反應容器中，例如利用氮氣對氧氣進行置換，藉此設為脫氧環境，一邊進行攪拌一邊進行加熱及保溫。 所使用的聚合起始劑及溶劑等並無特別限定，可使用該領域中通常所使用者。例如，作為聚合起始劑，可列舉偶氮化合物（2,2'-偶氮雙異丁腈、2,2'-偶氮雙(2,4-二甲基戊腈)等）或有機過氧化物（過氧化苯甲醯等），作為溶劑，只要為溶解各單體的溶劑即可，可列舉作為可包含於組成物中的溶劑（J）而後述的溶劑等。 Specifically, the following method can be mentioned: put predetermined amounts of (a) and (c), polymerization initiator, solvent, etc. into the reaction container, for example, use nitrogen to replace oxygen, thereby making it a deoxygenated environment, Heating and heat preservation were performed while stirring. The polymerization initiator, solvent, and the like to be used are not particularly limited, and those commonly used in this field can be used. For example, examples of polymerization initiators include azo compounds (2,2'-azobisisobutyronitrile, 2,2'-azobis(2,4-dimethylvaleronitrile), etc.) and organic peroxides. The oxide (benzoyl peroxide, etc.) may be used as a solvent as long as it dissolves each monomer, and examples thereof include solvents that will be described later as the solvent (J) that may be contained in the composition.

所獲得的共聚物可直接使用反應後的溶液，亦可使用濃縮或稀釋後的溶液，亦可使用利用再沈澱等方法以固體（粉體）的形式而取出者。若使用後述的溶劑（J）作為聚合時的溶劑，則可將反應後的溶液直接用於組成物的製備中，因此可使組成物的製造步驟簡化。The obtained copolymer may be used as it is after the reaction, may be used as a concentrated or diluted solution, or may be taken out as a solid (powder) by reprecipitation or the like. If the solvent (J) described later is used as a solvent during polymerization, the solution after the reaction can be used directly in the preparation of the composition, and thus the production steps of the composition can be simplified.

樹脂[K2]可藉由如下方式來製造：對於（a）與（c）的共聚物，使（b）所具有的碳數2～4的環狀醚加成於（a）所具有的羧酸及/或羧酸酐。 首先，以與作為樹脂[K1]的製造方法而記載的方法相同的方式製造（a）與（c）的共聚物。於該情況下，源自各者的構成單元的比率較佳為與針對樹脂[K1]而敘述的比率相同。 Resin [K2] can be produced by adding a cyclic ether having 2 to 4 carbon atoms in (b) to a carboxyl group in (a) to a copolymer of (a) and (c). Acids and/or carboxylic acid anhydrides. First, the copolymer of (a) and (c) was produced in the same manner as the method described as the production method of resin [K1]. In this case, it is preferable that the ratio of the structural unit derived from each is the same as the ratio described about resin [K1].

接著，使（b）所具有的碳數2～4的環狀醚與所述共聚物中的源自（a）的羧酸及/或羧酸酐的一部分反應。 繼製造（a）與（c）的共聚物之後，將燒瓶內環境自氮氣置換為空氣，於（b）、羧酸或羧酸酐與環狀醚的反應觸媒（例如有機磷化合物、金屬錯合物、胺化合物等）及聚合抑制劑（例如對苯二酚等）等的存在下，例如於60℃以上且130℃以下反應1小時以上且10小時以下，藉此可製造樹脂[K2]。 Next, the cyclic ether having 2 to 4 carbon atoms contained in (b) is reacted with a part of the carboxylic acid and/or carboxylic anhydride derived from (a) in the copolymer. After producing the copolymer of (a) and (c), replace the atmosphere in the flask from nitrogen to air, and in (b), the reaction catalyst of carboxylic acid or carboxylic acid anhydride and cyclic ether (such as organophosphorus compound, metal zirconium Compounds, amine compounds, etc.) and polymerization inhibitors (such as hydroquinone, etc.), for example, react at 60°C to 130°C for 1 hour to 10 hours, thereby producing resin [K2] .

相對於（a）100莫耳，（b）的使用量較佳為5莫耳以上且80莫耳以下，更佳為10莫耳以上且75莫耳以下。藉由設為該範圍，組成物的保存穩定性、以及膜的耐溶劑性、耐熱性及機械強度的平衡存在變得良好的傾向。The usage-amount of (b) is preferably 5 mol or more and 80 mol or less, more preferably 10 mol or more and 75 mol or less, per 100 mol of (a). By setting it as this range, there exists a tendency for the balance of the storage stability of a composition and the solvent resistance of a film, heat resistance, and mechanical strength to become favorable.

作為反應觸媒的有機磷化合物例如可列舉三苯基膦等。作為反應觸媒的胺化合物例如能夠使用脂肪族三級胺化合物或脂肪族四級銨鹽化合物等，作為其具體例，例如可列舉：三(二甲基胺基甲基)苯酚、三乙胺、四丁基溴化銨、四丁基氯化銨等。反應觸媒較佳為有機磷化合物。As an organophosphorus compound which is a reaction catalyst, triphenylphosphine etc. are mentioned, for example. As the amine compound of the reaction catalyst, for example, an aliphatic tertiary amine compound or an aliphatic quaternary ammonium salt compound, etc. can be used. As specific examples thereof, for example, tris(dimethylaminomethyl)phenol, triethylamine , tetrabutylammonium bromide, tetrabutylammonium chloride, etc. The reaction catalyst is preferably an organophosphorus compound.

相對於（a）、（b）及（c）的合計量100質量份，反應觸媒的使用量較佳為0.001質量份以上且5質量份以下。 相對於（a）、（b）及（c）的合計量100質量份，聚合抑制劑的使用量較佳為0.001質量份以上且5質量份以下。 The amount of the reaction catalyst used is preferably not less than 0.001 parts by mass and not more than 5 parts by mass relative to 100 parts by mass of the total amount of (a), (b) and (c). The amount of the polymerization inhibitor used is preferably not less than 0.001 parts by mass and not more than 5 parts by mass relative to 100 parts by mass of the total amount of (a), (b) and (c).

裝入方法、反應溫度及時間等反應條件可考慮到製造設備或聚合所帶來的發熱量等而適宜地調整。再者，可與聚合條件同樣地，考慮到製造設備或聚合所帶來的發熱量等而適宜地調整裝入方法或反應溫度。Reaction conditions such as charging method, reaction temperature, and time can be appropriately adjusted in consideration of production facilities, heat generated by polymerization, and the like. In addition, similarly to the polymerization conditions, the charging method and the reaction temperature can be appropriately adjusted in consideration of the production equipment, the heat generated by the polymerization, and the like.

關於樹脂[K3]，作為第一階段，以與所述樹脂[K1]的製造方法相同的方式獲得（b）與（c）的共聚物。與所述同樣地，所獲得的共聚物可直接使用反應後的溶液，亦可使用濃縮或稀釋後的溶液，亦可使用利用再沈澱等方法以固體（粉體）的形式取出者。Regarding the resin [K3], as a first stage, a copolymer of (b) and (c) was obtained in the same manner as the production method of the above-mentioned resin [K1]. In the same manner as above, the obtained copolymer may be used as it is after the reaction, may be used as a concentrated or diluted solution, or may be taken out as a solid (powder) by reprecipitation or the like.

相對於構成所述共聚物的所有構成單元的合計莫耳數，源自（b）及（c）的構成單元的比率分別較佳為： 源自（b）的構成單元：5莫耳%以上且95莫耳%以下， 源自（c）的構成單元：5莫耳%以上且95莫耳%以下， 更佳為： 源自（b）的構成單元：10莫耳%以上且90莫耳%以下， 源自（c）的構成單元：10莫耳%以上且90莫耳%以下。 The ratios of the constituent units derived from (b) and (c) to the total number of moles of all constituent units constituting the copolymer are preferably: Constituent units derived from (b): 5 mol% or more and 95 mol% or less, Constituent unit derived from (c): 5 mol% or more and 95 mol% or less, Even better: Constituent unit derived from (b): 10 mol% or more and 90 mol% or less, Structural unit derived from (c): 10 mol% or more and 90 mol% or less.

樹脂[K3]可藉由如下方式而獲得：以與樹脂[K2]的製造方法相同的條件，使（a）所具有的羧酸或羧酸酐和（b）與（c）的共聚物所具有的源自（b）的環狀醚反應。 相對於（b）100莫耳，和所述共聚物反應的（a）的使用量較佳為5莫耳以上且80莫耳以下。 Resin [K3] can be obtained by subjecting the carboxylic acid or carboxylic acid anhydride contained in (a) and the copolymer contained in (b) and (c) under the same conditions as the production method of resin [K2]. The cyclic ether reaction derived from (b). The amount of (a) reacted with the copolymer is preferably not less than 5 moles and not more than 80 moles relative to 100 moles of (b).

樹脂[K4]為進一步使羧酸酐與樹脂[K3]反應而成的樹脂。使羧酸酐和藉由環狀醚與羧酸或羧酸酐的反應而產生的羥基進行反應。 作為羧酸酐，例如可列舉：馬來酸酐、檸康酸酐、衣康酸酐、3-乙烯基鄰苯二甲酸酐、4-乙烯基鄰苯二甲酸酐、3,4,5,6-四氫鄰苯二甲酸酐、1,2,3,6-四氫鄰苯二甲酸酐、二甲基四氫鄰苯二甲酸酐、5,6-二羧基雙環[2.2.1]庚-2-烯酐等。 相對於（a）的使用量1莫耳，羧酸酐的使用量較佳為0.5莫耳～1莫耳。 Resin [K4] is resin obtained by further reacting carboxylic anhydride and resin [K3]. The carboxylic anhydride is reacted with a hydroxyl group generated by the reaction of a cyclic ether with a carboxylic acid or carboxylic anhydride. Examples of carboxylic anhydrides include maleic anhydride, citraconic anhydride, itaconic anhydride, 3-vinylphthalic anhydride, 4-vinylphthalic anhydride, 3,4,5,6-tetrahydro Phthalic anhydride, 1,2,3,6-tetrahydrophthalic anhydride, dimethyltetrahydrophthalic anhydride, 5,6-dicarboxybicyclo[2.2.1]hept-2-ene anhydride, etc. The usage-amount of carboxylic anhydride is preferably 0.5-1 mole with respect to 1 mole of the usage-amount of (a).

作為樹脂[K1]、樹脂[K2]、樹脂[K3]及樹脂[K4]，例如可列舉：(甲基)丙烯酸苄基酯/(甲基)丙烯酸共聚物、苯乙烯/(甲基)丙烯酸共聚物等樹脂[K1]； 對(甲基)丙烯酸苄基酯/(甲基)丙烯酸共聚物加成(甲基)丙烯酸縮水甘油酯而成的樹脂、對(甲基)丙烯酸三環癸酯/苯乙烯/(甲基)丙烯酸共聚物加成(甲基)丙烯酸縮水甘油酯而成的樹脂、對(甲基)丙烯酸三環癸酯/(甲基)丙烯酸苄基酯/(甲基)丙烯酸共聚物加成(甲基)丙烯酸縮水甘油酯而成的樹脂等樹脂[K2]； 使(甲基)丙烯酸與(甲基)丙烯酸三環癸酯/(甲基)丙烯酸縮水甘油酯的共聚物進行反應而成的樹脂、使(甲基)丙烯酸與(甲基)丙烯酸三環癸酯/苯乙烯/(甲基)丙烯酸縮水甘油酯的共聚物進行反應而成的樹脂等樹脂[K3]； 使(甲基)丙烯酸與(甲基)丙烯酸三環癸酯/(甲基)丙烯酸縮水甘油酯的共聚物進行反應而獲得樹脂，並使所獲的樹脂進而與四氫鄰苯二甲酸酐反應而成的樹脂等樹脂[K4]等。 樹脂（D）較佳為包含選自由樹脂[K2]、樹脂[K3]及樹脂[K4]所組成的群組中的至少一種。 Examples of resin [K1], resin [K2], resin [K3] and resin [K4] include benzyl (meth)acrylate/(meth)acrylic acid copolymer, styrene/(meth)acrylic acid Resins such as copolymers [K1]; Resin obtained by adding glycidyl (meth)acrylate to benzyl (meth)acrylate/(meth)acrylic acid copolymer, tricyclodecanyl (meth)acrylate/styrene/(meth)acrylate Resin obtained by adding glycidyl (meth)acrylate to acrylic copolymer, tricyclodecanyl (meth)acrylate/benzyl (meth)acrylate/(meth)acrylic acid copolymer added (meth) ) Resins such as resins made of glycidyl acrylate [K2]; Resin made by reacting (meth)acrylic acid with tricyclodecanyl (meth)acrylate/glycidyl (meth)acrylate copolymer, (meth)acrylic acid and tricyclodecanyl (meth)acrylate Resins such as resins formed by reacting copolymers of ester/styrene/glycidyl (meth)acrylate [K3]; Resin obtained by reacting (meth)acrylic acid with a copolymer of tricyclodecanyl (meth)acrylate/glycidyl (meth)acrylate, and further reacting the obtained resin with tetrahydrophthalic anhydride Resins such as resin [K4] and so on. The resin (D) preferably contains at least one selected from the group consisting of resin [K2], resin [K3] and resin [K4].

作為樹脂（D）的進一步的例子，可列舉日本專利特開2018-123274號公報中記載的樹脂。作為該樹脂，可列舉：於側鏈具有雙鍵、並且於主鏈包含下述式（I）所表示的構成單元（α）、與下述式（II）所表示的構成單元（β）且進而包含酸基的聚合物（以下，亦稱為「樹脂（Da）」）。 酸基例如可藉由樹脂（Da）包含源自含有酸基的單量體（例如(甲基)丙烯酸等）的構成單元（γ）而導入樹脂中。樹脂（Da）較佳為於主鏈骨架包含構成單元（α）、構成單元（β）及構成單元（γ）。 Further examples of the resin (D) include resins described in JP-A-2018-123274. Examples of such resins include: having a double bond in the side chain and including a structural unit (α) represented by the following formula (I) and a structural unit (β) represented by the following formula (II) in the main chain; Further, a polymer (hereinafter also referred to as "resin (Da)") containing an acid group. The acid group can be introduced into the resin, for example, when the resin (Da) contains a structural unit (γ) derived from an acid group-containing monomer (for example, (meth)acrylic acid, etc.). The resin (Da) preferably includes a constitutional unit (α), a constitutional unit (β) and a constitutional unit (γ) in the main chain skeleton.

[化10] [式中，R A及R B相同或不同，表示氫原子或碳數1～25的烴基；n表示式（I）所表示的構成單元的平均重複單元數，且為1以上的數] [chemical 10] [In the formula, R A and R B are the same or different, and represent a hydrogen atom or a hydrocarbon group having 1 to 25 carbon atoms; n represents the average number of repeating units of the constituent units represented by formula (I), and is a number of 1 or more]

[化11] [式中，R C相同或不同，表示氫原子或甲基；R D相同或不同，表示碳數4～20的直鏈狀或分支鏈狀烴基；m表示式（II）所表示的構成單元的平均重複單元數，且為1以上的數] [chemical 11] [In the formula, R C is the same or different, representing a hydrogen atom or a methyl group; R D is the same or different, representing a straight-chain or branched-chain hydrocarbon group with 4 to 20 carbons; m represents the constituent unit represented by formula (II) The average number of repeating units, and is a number of 1 or more]

於樹脂（Da）中，就樹脂（Da）的耐熱性或保存穩定性的觀點而言，相對於提供樹脂（Da）的主鏈骨架的所有單量體單元的總量100質量%，構成單元（α）的含有比例例如為0.5質量%以上且50質量%以下，較佳為1質量%以上且40質量%以下，更佳為5質量%以上且30質量%以下。式（I）中的n表示樹脂（Da）中的構成單元（α）的平均重複單元數，並且可以構成單元（α）的含有比例成為所述範圍內的方式設定n。In the resin (Da), from the viewpoint of heat resistance or storage stability of the resin (Da), the constituent unit is The content of (α) is, for example, 0.5% by mass to 50% by mass, preferably 1% by mass to 40% by mass, more preferably 5% by mass to 30% by mass. n in the formula (I) represents the average repeating unit number of the structural unit (α) in the resin (Da), and can be set so that the content ratio of the structural unit (α) falls within the above range.

就膜的耐溶劑性的觀點而言，相對於提供樹脂（Da）的主鏈骨架的所有單量體單元的總量100質量%，構成單元（β）的含有比例例如為10質量%以上且90質量%以下，較佳為20質量%以上且80質量%以下，更佳為30質量%以上且75質量%以下。式（II）中的m表示樹脂（Da）中的構成單元（β）的平均重複單元數，並且可以構成單元（β）的含有比例成為所述範圍內的方式設定m。From the viewpoint of solvent resistance of the film, the content ratio of the constituent unit (β) is, for example, 10% by mass or more with respect to the total amount of all monomer units providing the main chain skeleton of the resin (Da) (100% by mass) and 90 mass % or less, preferably 20 mass % or more and 80 mass % or less, more preferably 30 mass % or more and 75 mass % or less. m in the formula (II) represents the average repeating unit number of the structural unit (β) in the resin (Da), and m can be set so that the content ratio of the structural unit (β) falls within the above range.

就樹脂（Da）相對於溶劑（J）的溶解性等觀點而言，相對於提供樹脂（Da）的主鏈骨架的所有單量體單元的總量100質量%，構成單元（γ）的含有比例例如為0.5質量%以上且50質量%以下，較佳為2質量%以上且50質量%以下，更佳為5質量%以上且45質量%以下。From the viewpoint of the solubility of the resin (Da) in the solvent (J), etc., the content of the constituent unit (γ) is The ratio is, for example, 0.5% by mass to 50% by mass, preferably 2% by mass to 50% by mass, more preferably 5% by mass to 45% by mass.

樹脂（D）可包含選自由所述樹脂[K1]、樹脂[K2]、樹脂[K3]、樹脂[K4]及樹脂（Da）所組成的群組中的一種以上。The resin (D) may contain one or more types selected from the group consisting of the resin [K1], the resin [K2], the resin [K3], the resin [K4], and the resin (Da).

關於樹脂（D），藉由GPC測定的標準聚苯乙烯換算的重量平均分子量Mw例如為1000以上且9000以下，就組成物的顯影性及組成物或膜的發光強度的觀點而言，較佳為2000以上且8500以下，更佳為3000以上且8500以下。關於樹脂（D）的Mw，可適宜組合所使用的原料的選擇、裝入方法、反應溫度及時間等反應條件來調整。樹脂（D）的Mw可依照後述的實施例一欄中記載的測定方法來測定。或者，對於組成物中所含的樹脂（D），可使用GPC來測定Mw。The resin (D) has a weight average molecular weight Mw in terms of standard polystyrene measured by GPC of, for example, 1,000 to 9,000, which is preferable from the viewpoint of the developability of the composition and the luminous intensity of the composition or film. It is not less than 2000 and not more than 8500, more preferably not less than 3000 and not more than 8500. The Mw of the resin (D) can be adjusted by appropriately combining reaction conditions such as selection of raw materials to be used, charging method, reaction temperature, and time. The Mw of the resin (D) can be measured in accordance with the measurement method described in the section of Examples described later. Alternatively, the Mw of the resin (D) contained in the composition can be measured using GPC.

藉由CPC測定的樹脂（D）的分子量分佈[重量平均分子量（Mw）/數量平均分子量（Mn）]例如為1.0以上且6.0以下，就提高發光強度的觀點而言，較佳為1.2以上且4.0以下。The molecular weight distribution [weight average molecular weight (Mw)/number average molecular weight (Mn)] of the resin (D) measured by CPC is, for example, 1.0 or more and 6.0 or less, and is preferably 1.2 or more and 6.0 or less from the viewpoint of increasing luminous intensity. Below 4.0.

就組成物的顯影性及膜的耐溶劑性的觀點而言，樹脂（D）的酸價較佳為90 mgKOH/g以上且150 mgKOH/g以下，更佳為95 mgKOH/g以上且140 mgKOH/g以下，進而佳為100 mgKOH/g以上且130 mgKOH/g以下。樹脂（D）的酸價可藉由具有酸基的單體成分（例如所述（a））的含有率來調整。From the viewpoint of the developability of the composition and the solvent resistance of the film, the acid value of the resin (D) is preferably from 90 mgKOH/g to 150 mgKOH/g, more preferably from 95 mgKOH/g to 140 mgKOH /g or less, more preferably 100 mgKOH/g or more and 130 mgKOH/g or less. The acid value of resin (D) can be adjusted by the content rate of the monomer component (for example, said (a)) which has an acid group.

樹脂（D）的酸價為作為中和1 g樹脂（D）所需的氫氧化鉀的量（mg）來測定的值，例如可藉由使用氫氧化鉀水溶液進行滴定來求出。具體而言，可依照後述的實施例一欄中記載的測定方法來測定。或者，對於組成物中所含的樹脂（D），例如亦可藉由對其進行結構分析來求出酸價。The acid value of the resin (D) is a value measured as the amount (mg) of potassium hydroxide required to neutralize 1 g of the resin (D), and can be determined, for example, by titration using an aqueous potassium hydroxide solution. Specifically, it can be measured in accordance with the measuring method described in the section of Examples described later. Alternatively, for the resin (D) contained in the composition, the acid value can also be obtained by, for example, analyzing its structure.

就提高發光強度的觀點而言，樹脂（D）較佳為包含雙鍵當量為300 g/eq以上且2000 g/eq以下的樹脂，更佳為包含雙鍵當量為500 g/eq以上且1500 g/eq以下的樹脂。作為具有300 g/eq以上且2000 g/eq以下的雙鍵當量的樹脂，可列舉(甲基)丙烯酸系樹脂。樹脂（D）較佳為包含(甲基)丙烯酸系樹脂。From the viewpoint of increasing the luminous intensity, the resin (D) is preferably a resin containing a double bond equivalent of 300 g/eq to 2000 g/eq, more preferably a double bond equivalent of 500 g/eq to 1500 g/eq. Resin below g/eq. (Meth)acrylic resin is mentioned as resin which has a double bond equivalent of 300 g/eq or more and 2000 g/eq or less. The resin (D) preferably contains a (meth)acrylic resin.

相對於組成物的固體成分的總量，組成物中的樹脂（D）的含有率例如為5質量%以上且80質量%以下，較佳為10質量%以上且70質量%以下，更佳為13質量%以上且60質量%以下，進而佳為17質量%以上且55質量%以下。若樹脂（D）的含有率為所述範圍，則存在半導體粒子（A）容易分散、發光強度容易變高的傾向。The content of the resin (D) in the composition is, for example, not less than 5 mass % and not more than 80 mass %, preferably not less than 10 mass % and not more than 70 mass %, more preferably 13% by mass to 60% by mass, more preferably 17% by mass to 55% by mass. If the content of the resin (D) is in the above-mentioned range, the semiconductor particles (A) tend to disperse easily and the emission intensity tends to increase.

於組成物中，樹脂（D）相對於後述的聚合性化合物（E）的質量比（固體成分比）例如為1以上，就組成物的顯影性及組成物或膜的發光強度的觀點而言，較佳為1.5以上，更佳為2以上。In the composition, the mass ratio (solid content ratio) of the resin (D) to the polymerizable compound (E) described later is, for example, 1 or more, from the viewpoint of the developability of the composition and the luminous intensity of the composition or film , preferably 1.5 or more, more preferably 2 or more.

[6]聚合性化合物（E） 組成物可進而包含聚合性化合物（E）。聚合性化合物（E）為可藉由自後述的聚合起始劑（F）產生的活性自由基、酸等而進行聚合的化合物。作為聚合性化合物（E），可列舉具有乙烯性不飽和鍵的化合物等光聚合性化合物，例如為(甲基)丙烯酸酯化合物。聚合性化合物（E）的其他例子為熱聚合性化合物。組成物亦可包含兩種以上的聚合性化合物（E）。 [6] Polymeric compound (E) The composition may further contain a polymerizable compound (E). The polymerizable compound (E) is a compound that can be polymerized by active radicals, acids, etc. generated from the polymerization initiator (F) described later. As a polymeric compound (E), photopolymerizable compounds, such as the compound which has an ethylenically unsaturated bond, are mentioned, for example, it is a (meth)acrylate compound. Another example of the polymerizable compound (E) is a thermopolymerizable compound. The composition may contain two or more polymerizable compounds (E).

聚合性化合物（E）較佳為分子內具有三個以上的乙烯性不飽和鍵的光聚合性化合物。聚合性化合物（E）的重量平均分子量較佳為150以上，更佳為250以上，且較佳為2900以下，更佳為1500以下。The polymerizable compound (E) is preferably a photopolymerizable compound having three or more ethylenically unsaturated bonds in the molecule. The weight average molecular weight of the polymerizable compound (E) is preferably at least 150, more preferably at least 250, and is preferably at most 2900, more preferably at most 1500.

作為分子內具有三個以上的乙烯性不飽和鍵的光聚合性化合物，可列舉：分子內具有三個以上的乙烯性不飽和鍵且具有酸性官能基的化合物（Ea）；分子內具有三個以上的乙烯性不飽和鍵且不具有酸性官能基的化合物（Eb）。聚合性化合物（E）較佳為包含化合物（Ea）及化合物（Eb）的至少一種，亦可包含兩種以上的化合物（Ea）、兩種以上的化合物（Eb）、或化合物（Ea）的至少一種與化合物（Eb）的至少一種。 作為所述酸性官能基，例如可列舉：羧基、磺酸基、磷酸基等。其中，酸性官能基較佳為羧基。 Examples of photopolymerizable compounds having three or more ethylenically unsaturated bonds in the molecule include compounds (Ea) having three or more ethylenically unsaturated bonds in the molecule and acidic functional groups; compounds having three or more ethylenically unsaturated bonds in the molecule; The above compound (Eb) having no ethylenically unsaturated bond and no acidic functional group. The polymerizable compound (E) preferably contains at least one of compound (Ea) and compound (Eb), and may contain two or more compounds (Ea), two or more compounds (Eb), or compounds (Ea) at least one and at least one of compounds (Eb). As said acidic functional group, a carboxyl group, a sulfonic acid group, a phosphoric acid group etc. are mentioned, for example. Among them, the acidic functional group is preferably a carboxyl group.

藉由聚合性化合物（E）包含化合物（Ea），可提高組成物中的半導體粒子（A）的分散性，可提高發光特性。另外，藉由聚合性化合物（C）包含化合物（Ea），可提高組成物的硬化性及耐熱性。When the polymerizable compound (E) contains the compound (Ea), the dispersibility of the semiconductor particles (A) in the composition can be improved, and the light emitting characteristics can be improved. In addition, when the polymerizable compound (C) contains the compound (Ea), the curability and heat resistance of the composition can be improved.

化合物（Ea）所具有的乙烯性不飽和鍵較佳為(甲基)丙烯醯氧基。化合物（Ea）一分子所具有的乙烯性不飽和鍵的數量較佳為3以上且5以下，更佳為3。化合物（Ea）一分子所具有的酸性官能基的數量為1以上。於具有兩個以上的酸性官能基的情況下，各酸性官能基可不同亦可相同，較佳為具有至少一個羧基。The ethylenically unsaturated bond that the compound (Ea) has is preferably a (meth)acryloyloxy group. The number of ethylenically unsaturated bonds in one molecule of the compound (Ea) is preferably from 3 to 5, more preferably 3. The number of acidic functional groups that the compound (Ea) has in one molecule is one or more. When having two or more acidic functional groups, each acidic functional group may be different or the same, and preferably has at least one carboxyl group.

作為化合物（Ea），可列舉對季戊四醇三(甲基)丙烯酸酯或二季戊四醇五(甲基)丙烯酸酯等具有三個以上的(甲基)丙烯醯氧基及羥基的化合物進行多元酸改質而獲得的化合物。作為該化合物，例如可列舉將季戊四醇三(甲基)丙烯酸酯與二元酸（例如琥珀酸、馬來酸）或其酸酐單酯化而成的化合物、將二季戊四醇五(甲基)丙烯酸酯與二元酸（例如琥珀酸、馬來酸）或其酸酐單酯化而成的化合物等。Examples of the compound (Ea) include polybasic acid modification of a compound having three or more (meth)acryloxy groups and hydroxyl groups, such as pentaerythritol tri(meth)acrylate or dipentaerythritol penta(meth)acrylate. obtained compounds. Examples of such compounds include compounds obtained by monoesterifying pentaerythritol tri(meth)acrylate with dibasic acids (such as succinic acid, maleic acid) or their anhydrides, dipentaerythritol penta(meth)acrylate Compounds formed by monoesterification with dibasic acids (such as succinic acid, maleic acid) or their anhydrides, etc.

化合物（Eb）所具有的乙烯性不飽和鍵較佳為(甲基)丙烯醯氧基。化合物（Eb）一分子所具有的乙烯性不飽和鍵的數量較佳為3以上且6以下。The ethylenically unsaturated bond contained in the compound (Eb) is preferably a (meth)acryloyloxy group. The number of ethylenically unsaturated bonds in one molecule of the compound (Eb) is preferably 3 or more and 6 or less.

作為化合物（Eb），例如可列舉：三羥甲基丙烷三(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、季戊四醇四(甲基)丙烯酸酯、二季戊四醇五(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、三季戊四醇八(甲基)丙烯酸酯、三季戊四醇七(甲基)丙烯酸酯、四季戊四醇十(甲基)丙烯酸酯、四季戊四醇九(甲基)丙烯酸酯、異氰脲酸三(2-(甲基)丙烯醯氧基乙基)酯、乙二醇改質季戊四醇四(甲基)丙烯酸酯、乙二醇改質二季戊四醇六(甲基)丙烯酸酯、丙二醇改質季戊四醇四(甲基)丙烯酸酯、丙二醇改質二季戊四醇六(甲基)丙烯酸酯、己內酯改質季戊四醇四(甲基)丙烯酸酯、己內酯改質二季戊四醇六(甲基)丙烯酸酯等。其中，較佳為二季戊四醇五(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯等。Examples of the compound (Eb) include: trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol penta(meth)acrylate , dipentaerythritol hexa(meth)acrylate, tripentaerythritol octa(meth)acrylate, tripentaerythritol hepta(meth)acrylate, tetrapentaerythritol deca(meth)acrylate, tetrapentaerythritol nona(meth)acrylate , Tris(2-(meth)acryloxyethyl) isocyanurate, ethylene glycol modified pentaerythritol tetra(meth)acrylate, ethylene glycol modified dipentaerythritol hexa(meth)acrylate , propylene glycol modified pentaerythritol tetra(meth)acrylate, propylene glycol modified dipentaerythritol hexa(meth)acrylate, caprolactone modified pentaerythritol tetra(meth)acrylate, caprolactone modified dipentaerythritol hexa(meth)acrylate base) acrylate, etc. Among these, dipentaerythritol penta(meth)acrylate, dipentaerythritol hexa(meth)acrylate, etc. are preferable.

於組成物包含聚合性化合物（E）的情況下，相對於組成物的固體成分的總量，組成物中的聚合性化合物（E）的含有率較佳為5質量%以上，更佳為7質量%以上，進而佳為10質量%以上，且較佳為60質量%以下，更佳為45質量%以下，進而佳為30質量%以下。若聚合性化合物（E）的含有率處於所述範圍內，則存在組成物的顯影性及膜的耐溶劑性提高的傾向。When the composition contains the polymerizable compound (E), the content of the polymerizable compound (E) in the composition is preferably at least 5% by mass, more preferably 7% by mass, based on the total amount of solids in the composition. % by mass or more, more preferably at least 10 mass %, and preferably at most 60 mass %, more preferably at most 45 mass %, further preferably at most 30 mass %. There exists a tendency for the developability of a composition and the solvent resistance of a film to improve that the content rate of a polymeric compound (E) exists in the said range.

[7]聚合起始劑（F） 組成物可進而包含聚合起始劑（F）。聚合起始劑（F）為可藉由光或熱的作用產生活性自由基、酸等而使聚合性化合物（E）的聚合開始的化合物。組成物可包含一種或兩種以上的聚合起始劑（F）。 作為聚合起始劑（F），可列舉：肟化合物、苯烷基酮化合物、聯咪唑化合物、三嗪化合物及醯基膦化合物等光聚合起始劑；偶氮系化合物或有機過氧化物等熱聚合起始劑。 [7] Polymerization initiator (F) The composition may further contain a polymerization initiator (F). The polymerization initiator (F) is a compound capable of generating active radicals, acids, etc. by the action of light or heat to initiate polymerization of the polymerizable compound (E). The composition may contain one kind or two or more kinds of polymerization initiators (F). Examples of the polymerization initiator (F) include: photopolymerization initiators such as oxime compounds, phenyl ketone compounds, biimidazole compounds, triazine compounds, and acyl phosphine compounds; azo compounds, organic peroxides, etc. Initiator for thermal polymerization.

肟化合物的一例為具有下述式（1）所表示的第一分子結構的肟化合物。以下，亦將該肟化合物稱為「肟化合物（1）」。An example of an oxime compound is an oxime compound having a first molecular structure represented by the following formula (1). Hereinafter, this oxime compound is also called "oxime compound (1)".

[化12] [chemical 12]

就提高發光強度的觀點而言，包含肟化合物（1）作為聚合起始劑（F）可能會有利。推測可發揮此種效果的一個原因在於：由於肟化合物（1）所具有的特有的分子結構，肟化合物（1）的吸收波長於肟化合物（1）使光聚合開始時所必需的肟化合物（1）的開裂（分解）前後大幅變化，因此肟化合物（1）的光自由基聚合起始能力高。Including the oxime compound (1) as the polymerization initiator (F) may be advantageous from the viewpoint of increasing the luminescence intensity. It is speculated that one reason for this effect is that the absorption wavelength of the oxime compound (1) is lower than that of the oxime compound (1) necessary for the initiation of photopolymerization due to the unique molecular structure of the oxime compound (1). Since the cracking (decomposition) of 1) changes greatly before and after, the photoradical polymerization initiation ability of the oxime compound (1) is high.

式（1）中，R 1表示R 11、OR 11、COR 11、SR 11、CONR 12R 13或CN。 R 11、R 12及R 13分別獨立地表示氫原子、碳數1～20的烷基、碳數6～30的芳基、碳數7～30的芳烷基或碳數2～20的雜環基。 R 11、R 12或R 13所表示的基的氫原子可經OR 21、COR 21、SR 21、NR 22Ra 23、CONR 22R 23、-NR 22-OR 23、-N(COR 22)-OCOR 23、-C(=N-OR 21)-R 22、-C(=N-OCOR 21)-R 22、CN、鹵素原子、或COOR 21取代。 R 21、R 22及R 23分別獨立地表示氫原子、碳數1～20的烷基、碳數6～30的芳基、碳數7～30的芳烷基或碳數2～20的雜環基。 R 21、R 22或R 23所表示的基的氫原子可經CN、鹵素原子、羥基或羧基取代。 於R 11、R 12、R 13、R 21、R 22或R 23所表示的基具有伸烷基部分的情況下，該伸烷基部分可由-O-、-S-、-COO-、-OCO-、-NR 24-、-NR 24CO-、-NR 24COO-、-OCONR 24-、-SCO-、-COS-、-OCS-或-CSO-中斷1次～5次。 R 24表示氫原子、碳數1～20的烷基、碳數6～30的芳基、碳數7～30的芳烷基或碳數2～20的雜環基。 於R 11、R 12、R 13、R 21、R 22或R 23所表示的基具有烷基部分的情況下，該烷基部分可為分支鏈狀，亦可為環狀，另外，R 12與R 13以及R 22與R 23分別可一起形成環。 *表示與肟化合物（1）所具有的第一分子結構以外的其他分子結構即第二分子結構的鍵結鍵。 In formula (1), R 1 represents R 11 , OR 11 , COR 11 , SR 11 , CONR 12 R 13 or CN. R 11 , R 12 and R 13 independently represent a hydrogen atom, an alkyl group with 1 to 20 carbons, an aryl group with 6 to 30 carbons, an aralkyl group with 7 to 30 carbons, or a heterogeneous group with 2 to 20 carbons. Ring base. The hydrogen atom of the group represented by R 11 , R 12 or R 13 can be treated by OR 21 , COR 21 , SR 21 , NR 22 Ra 23 , CONR 22 R 23 , -NR 22 -OR 23 , -N(COR 22 )- Substituted by OCOR 23 , -C(=N-OR 21 )-R 22 , -C(=N-OCOR 21 )-R 22 , CN, a halogen atom, or COOR 21 . R 21 , R 22 and R 23 independently represent a hydrogen atom, an alkyl group with 1 to 20 carbons, an aryl group with 6 to 30 carbons, an aralkyl group with 7 to 30 carbons, or a heterogeneous group with 2 to 20 carbons. Ring base. The hydrogen atom of the group represented by R 21 , R 22 or R 23 may be substituted by CN, a halogen atom, a hydroxyl group or a carboxyl group. When the group represented by R 11 , R 12 , R 13 , R 21 , R 22 or R 23 has an alkylene part, the alkylene part can be represented by -O-, -S-, -COO-, - OCO-, -NR 24 -, -NR 24 CO-, -NR 24 COO-, -OCONR 24 -, -SCO-, -COS-, -OCS- or -CSO- interrupted 1 to 5 times. R 24 represents a hydrogen atom, an alkyl group having 1 to 20 carbons, an aryl group having 6 to 30 carbons, an aralkyl group having 7 to 30 carbons, or a heterocyclic group having 2 to 20 carbons. When the group represented by R 11 , R 12 , R 13 , R 21 , R 22 or R 23 has an alkyl portion, the alkyl portion may be branched or cyclic. In addition, R 12 Together with R 13 and R 22 and R 23 respectively, they may form a ring. * indicates a bond with the second molecular structure which is a molecular structure other than the first molecular structure possessed by the oxime compound (1).

作為式（1）中的R 11、R 12、R 13、R 21、R 22、R 23及R 24所表示的碳數1～20的烷基，例如可列舉：甲基、乙基、丙基、異丙基、丁基、異丁基、第二丁基、第三丁基、戊基、異戊基、第三戊基、己基、庚基、辛基、異辛基、2-乙基己基、第三辛基、壬基、異壬基、癸基、異癸基、十一基、十二基、十四基、十六基、十八基、二十基、環戊基、環己基、環己基甲基、環己基乙基等。 Examples of the alkyl group having 1 to 20 carbon atoms represented by R 11 , R 12 , R 13 , R 21 , R 22 , R 23 and R 24 in the formula (1) include methyl, ethyl, propyl, Base, isopropyl, butyl, isobutyl, second butyl, third butyl, pentyl, isopentyl, third pentyl, hexyl, heptyl, octyl, isooctyl, 2-ethyl Hexyl, octyl, nonyl, isononyl, decyl, isodecyl, undecyl, dodecyl, tetradecyl, hexadecyl, octadecyl, eicosyl, cyclopentyl, Cyclohexyl, cyclohexylmethyl, cyclohexylethyl, etc.

作為式（1）中的R 11、R 12、R 13、R 21、R 22、R 23及R 24所表示的碳數6～30的芳基，例如可列舉：苯基、甲苯基、二甲苯基、乙基苯基、萘基、蒽基、菲基、經一個以上的所述烷基取代的苯基、聯苯基、萘基、蒽基等。 Examples of the aryl group having 6 to 30 carbon atoms represented by R 11 , R 12 , R 13 , R 21 , R 22 , R 23 and R 24 in formula (1) include phenyl, tolyl, bis Tolyl, ethylphenyl, naphthyl, anthracenyl, phenanthrenyl, phenyl substituted by one or more of the above-mentioned alkyl groups, biphenyl, naphthyl, anthracenyl, etc.

作為式（1）中的R 11、R 12、R 13、R 21、R 22、R 23及R 24所表示的碳數7～30的芳烷基，例如可列舉：苄基、α-甲基苄基、α,α-二甲基苄基、苯基乙基等。 Examples of the aralkyl group having 7 to 30 carbon atoms represented by R 11 , R 12 , R 13 , R 21 , R 22 , R 23 and R 24 in formula (1) include benzyl, α-methyl benzyl, α,α-dimethylbenzyl, phenylethyl, etc.

作為式（1）中的R 11、R 12、R 13、R 21、R 22、R 23及R 24所表示的碳數2～20的雜環基，例如可列舉：吡啶基、嘧啶基、呋喃基、噻吩基、四氫呋喃基、二氧雜環戊基、苯並噁唑-2-基、四氫吡喃基、吡咯啶基、咪唑啶基、吡唑啶基、四氫噻唑基、異四氫噻唑基、噁唑啶基、異噁唑啶基、哌啶基、哌嗪基、嗎啉基等，較佳為5員雜環～7員雜環。 Examples of the heterocyclic group having 2 to 20 carbon atoms represented by R 11 , R 12 , R 13 , R 21 , R 22 , R 23 and R 24 in formula (1) include pyridyl, pyrimidyl, Furyl, thienyl, tetrahydrofuryl, dioxolyl, benzoxazol-2-yl, tetrahydropyranyl, pyrrolidinyl, imidazolidinyl, pyrazolidinyl, tetrahydrothiazolyl, iso Tetrahydrothiazolyl, oxazolidinyl, isoxazolidinyl, piperidinyl, piperazinyl, morpholinyl, etc. are preferably 5-7 membered heterocycles.

式（1）中的R 12與R 13以及R 22與R 23分別可一起形成環是指R 12與R 13以及R 22與R 23分別可一起與所連接的氮原子、碳原子或氧原子一同形成環。 作為式（1）中的Ra 12與Ra 13以及Ra 22與Ra 23可一起形成的環，例如可列舉：環戊烷環、環己烷環、環戊烯環、苯環、哌啶環、嗎啉環、內酯環、內醯胺環等，較佳為5員環～7員環。 In the formula (1), R 12 and R 13 and R 22 and R 23 can form a ring together respectively, which means that R 12 and R 13 and R 22 and R 23 can respectively form a ring with the connected nitrogen atom, carbon atom or oxygen atom together form a ring. Examples of rings that Ra 12 and Ra 13 and Ra 22 and Ra 23 in the formula (1) may form together include, for example, a cyclopentane ring, a cyclohexane ring, a cyclopentene ring, a benzene ring, a piperidine ring, The morpholine ring, lactone ring, lactamide ring, etc. are preferably 5- to 7-membered rings.

作為式（1）中的R 11、R 12、R 13、R 21、R 22及R 23可以取代基的形式具有的鹵素原子，可列舉：氟原子、氯原子、溴原子及碘原子。 Examples of the halogen atom that R 11 , R 12 , R 13 , R 21 , R 22 and R 23 may have as substituents in formula (1) include fluorine atom, chlorine atom, bromine atom and iodine atom.

式（1）中的R 1較佳為R 11，更佳為碳數1～20的烷基，進而佳為碳數1～10的烷基，進而更佳為1～6的烷基。 R 1 in formula (1) is preferably R 11 , more preferably an alkyl group having 1 to 20 carbons, still more preferably an alkyl group having 1 to 10 carbons, even more preferably an alkyl group having 1 to 6 carbons.

與式（1）所表示的第一分子結構連結的第二分子結構的一例是下述式（2）所表示的結構。第二分子結構是指肟化合物（1）所具有的所述第一分子結構以外的其他分子結構部分。 式（2）中「*」所表示的鍵結鍵與式（1）中「*」所表示的鍵結鍵直接鍵結。即，於第二分子結構是式（2）所表示的結構的情況下，式（2）中的具有「-*」的苯環與式（1）中的具有「-*」的羰基直接鍵結。 An example of the second molecular structure linked to the first molecular structure represented by formula (1) is a structure represented by the following formula (2). The second molecular structure refers to a molecular structure part other than the first molecular structure possessed by the oxime compound (1). The bond represented by "*" in formula (2) is directly bonded to the bond represented by "*" in formula (1). That is, when the second molecular structure is a structure represented by formula (2), the benzene ring having "-*" in formula (2) is directly bonded to the carbonyl group having "-*" in formula (1) Knot.

[化13] [chemical 13]

式（2）中，R 2及R 3分別獨立地表示R 11、OR 11、SR 11、COR 11、CONR 12R 13、NR 12COR 11、OCOR 11、COOR 11、SCOR 11、OCSR 11、COSR 11、CSOR 11、CN或鹵素原子。 於存在多個R 2時，該些可相同亦可不同。 於存在多個R 3時，該些可相同亦可不同。 R 11、R 12及R 13表示與所述相同的含義。 s及t分別獨立地表示0～4的整數。 L表示硫原子、CR 31R 32、CO或NR 33。 R 31、R 32及R 33分別獨立地表示氫原子、碳數1～20的烷基、碳數6～30的芳基或碳數7～30的芳烷基。 於R 31、R 32或R 33所表示的基具有烷基部分的情況下，該烷基部分可為分支鏈狀，亦可為環狀，R 31、R 32及R 33可分別獨立地與鄰接的某一苯環一起形成環。 R 4表示羥基、羧基或下述式（2-1）所表示的基。 In formula (2), R 2 and R 3 independently represent R 11 , OR 11 , SR 11 , COR 11 , CONR 12 R 13 , NR 12 COR 11 , OCOR 11 , COOR 11 , SCOR 11 , OCSR 11 , COSR 11 , CSOR 11 , CN or a halogen atom. When there are a plurality of R 2 , these may be the same or different. When there are multiple R 3 s, these may be the same or different. R 11 , R 12 and R 13 represent the same meanings as described above. s and t each independently represent the integer of 0-4. L represents a sulfur atom, CR 31 R 32 , CO or NR 33 . R 31 , R 32 and R 33 each independently represent a hydrogen atom, an alkyl group having 1 to 20 carbons, an aryl group having 6 to 30 carbons, or an aralkyl group having 7 to 30 carbons. When the group represented by R 31 , R 32 or R 33 has an alkyl part, the alkyl part may be branched or cyclic, and R 31 , R 32 and R 33 may be independently combined with Adjacent benzene rings form a ring together. R 4 represents a hydroxyl group, a carboxyl group, or a group represented by the following formula (2-1).

[化14] （式（2-1）中，L 1表示-O-、-S-、-NR 22-、-NR 22CO-、-SO 2-、-CS-、-OCO-或-COO-； R 22表示與所述相同的含義； L 2表示自碳數1～20的烷基中去除v個氫原子而成的基、自碳數6～30的芳基中去除v個氫原子而成的基、自碳數7～30的芳烷基中去除v個氫原子而成的基或自碳數2～20的雜環基中去除v個氫原子而成的基； 於L 2所表示的基具有伸烷基部分的情況下，該伸烷基部分可由-O-、-S-、-COO-、-OCO-、-NR 22-、-NR 22COO-、-OCONR 22-、-SCO-、-COS-、-OCS-或-CSO-中斷1次～5次，該伸烷基部分可為分支鏈狀，亦可為環狀； R 4a表示OR 41、SR 41、CONR 42R 43、NR 42COR 43、OCOR 41、COOR 41、SCOR 41、OCSR 41、COSR 41、CSOR 41、CN或鹵素原子； 於存在多個R 4a時，該些可相同亦可不同； R 41、R 42及R 43分別獨立地表示氫原子、碳數1～20的烷基、碳數6～30的芳基或碳數7～30的芳烷基，於R 41、R 42及R 43所表示的基具有烷基部分的情況下，該烷基部分可為分支鏈狀，亦可為環狀，R 42與R 43可一起形成環； v表示1～3的整數） *表示與肟化合物（1）所具有的第一分子結構的鍵結鍵。 [chemical 14] (In formula (2-1), L 1 represents -O-, -S-, -NR 22 -, -NR 22 CO-, -SO 2 -, -CS-, -OCO- or -COO-; R 22 Indicates the same meaning as above; L2 represents a group obtained by removing v hydrogen atoms from an alkyl group having 1 to 20 carbons, and a group obtained by removing v hydrogen atoms from an aryl group having 6 to 30 carbons , a group formed by removing v hydrogen atoms from an aralkyl group with 7 to 30 carbons or a group formed by removing v hydrogen atoms from a heterocyclic group with 2 to 20 carbons; the group represented by L2 In the case of having an alkylene moiety, the alkylene moiety can be represented by -O-, -S-, -COO-, -OCO-, -NR 22 -, -NR 22 COO-, -OCONR 22 -, -SCO- , -COS-, -OCS- or -CSO- interrupted 1 to 5 times, the alkylene part can be branched or cyclic; R 4a means OR 41 , SR 41 , CONR 42 R 43 , NR 42 COR 43 , OCOR 41 , COOR 41 , SCOR 41 , OCSR 41 , COSR 41 , CSOR 41 , CN or a halogen atom; when there are multiple R 4a , these may be the same or different; R 41 , R 42 and R 43 each independently represent a hydrogen atom, an alkyl group with 1 to 20 carbons, an aryl group with 6 to 30 carbons, or an aralkyl group with 7 to 30 carbons, and the groups represented by R 41 , R 42 and R 43 In the case of having an alkyl part, the alkyl part can be branched or cyclic, and R 42 and R 43 can form a ring together; v represents an integer from 1 to 3) * represents the combination with the oxime compound (1) The bonding bond that has the first molecular structure.

式（2）中的R 11、R 12、R 13、R 21、R 22、R 23、R 24、R 31、R 32及R 33以及所述式（2-1）中的R 22、R 41、R 42及R 43所表示的碳數1～20的烷基、碳數6～30的芳基、碳數7～30的芳烷基的例子與針對式（1）中的R 11、R 12、R 13、R 21、R 22、R 23及R 24的例子相同。 R 11 , R 12 , R 13 , R 21 , R 22 , R 23 , R 24 , R 31 , R 32 and R 33 in formula (2), and R 22 , R in formula ( 2-1 ) 41 , examples of alkyl groups having 1 to 20 carbons, aryl groups having 6 to 30 carbons, and aralkyl groups having 7 to 30 carbons represented by R 42 and R 43 are the same as for R 11 , Examples of R 12 , R 13 , R 21 , R 22 , R 23 and R 24 are the same.

式（2）中的R 11、R 12、R 13、R 21、R 22、R 23、R 24以及所述式（2-1）中的R 22所表示的碳數2～20的雜環基的例子與針對式（1）中的R 11、R 12、R 13、R 21、R 22、R 23及R 24的例子相同。 A heterocyclic ring having 2 to 20 carbons represented by R 11 , R 12 , R 13 , R 21 , R 22 , R 23 , R 24 in formula (2), and R 22 in formula (2-1) above Examples of the group are the same as those for R 11 , R 12 , R 13 , R 21 , R 22 , R 23 and R 24 in formula (1).

式（2）中的R 31、R 32及R 33可分別獨立地與鄰接的某一苯環一起形成環是指R 31、R 32及R 33可分別獨立地與鄰接的某一苯環一起與所連接的氮原子一同形成環。 式（2）中的R 31、R 32及R 33可與鄰接的某一苯環一起形成的環的例子和針對式（1）中的Ra 12與Ra 13以及Ra 22與Ra 23可一起形成的環的例子相同。 R 31 , R 32 and R 33 in formula (2) can each independently form a ring with an adjacent benzene ring means that R 31 , R 32 and R 33 can each independently form a ring with an adjacent benzene ring Together with the attached nitrogen atom, a ring is formed. Examples of rings that R 31 , R 32 and R 33 in formula (2) can form together with an adjacent benzene ring are the same as those in formula (1) where Ra 12 and Ra 13 and Ra 22 and Ra 23 can form together The ring example is the same.

所述式（2-1）中的L 2表示自碳數1～20的烷基、碳數6～30的芳基、碳數7～30的芳烷基或碳數2～20的雜環基中去除v個氫原子而成的基。 L in the formula (2-1) represents an alkyl group with 1 to 20 carbons, an aryl group with 6 to 30 carbons, an aralkyl group with 7 to 30 carbons, or a heterocyclic ring with 2 to 20 carbons A group formed by removing v hydrogen atoms from the group.

作為自碳數1～20的烷基中去除v個氫原子而成的基，例如於v為1的情況下，可列舉：亞甲基、伸乙基、伸丙基、甲基伸乙基、伸丁基、1-甲基伸丙基、2-甲基伸丙基、1,2-二甲基伸丙基、1,3-二甲基伸丙基、1-甲基伸丁基、2-甲基伸丁基、3-甲基伸丁基、4-甲基伸丁基、2,4-二甲基伸丁基、1,3-二甲基伸丁基、伸戊基、伸己基、伸庚基、伸辛基、伸壬基、伸癸基、伸十二基、伸十三基、伸十四基、伸十五基、乙烷-1,1-二基、丙烷-2,2-二基等伸烷基。As a group obtained by removing v hydrogen atoms from an alkyl group having 1 to 20 carbon atoms, for example, when v is 1, there may be mentioned: methylene group, ethylidene group, propylidene group, methylethylidene group , Butyl, 1-methyl-propyl, 2-methyl-propyl, 1,2-dimethyl-propyl, 1,3-dimethyl-propyl, 1-methyl-butyl , 2-methyl-butyl, 3-methyl-butyl, 4-methyl-butyl, 2,4-dimethyl-butyl, 1,3-dimethyl-butyl, pentyl , Hexyl, Heptyl, Octyl, Nonyl, Decyl, Dodecyl, Tridecyl, Tetradecyl, Pentadecyl, Ethane-1,1-diyl, Alkylene groups such as propane-2,2-diyl.

作為自碳數6～30的芳基中去除v個氫原子而成的基，例如，於v為1的情況下，可列舉：1,2-伸苯基、1,3-伸苯基、1,4-伸苯基、2,6-伸萘基、1,4-伸萘基、2,5-二甲基-1,4-伸苯基、二苯基甲烷-4,4'-二基、2,2-二苯基丙烷-4,4'-二基、二苯基硫醚-4,4'-二基、二苯基碸-4,4'-二基等伸芳基。As a group obtained by removing v hydrogen atoms from an aryl group having 6 to 30 carbon atoms, for example, when v is 1, 1,2-phenylene, 1,3-phenylene, 1,4-phenylene, 2,6-naphthyl, 1,4-naphthyl, 2,5-dimethyl-1,4-phenylene, diphenylmethane-4,4'- Diyl, 2,2-diphenylpropane-4,4'-diyl, diphenylsulfide-4,4'-diyl, diphenylsulfide-4,4'-diyl and other aryl groups .

作為自碳數7～30的芳烷基中去除v個氫原子而成的基，例如，於v為1的情況下，可列舉下述式（a）所表示的基及下述式（b）所表示的基等。As a group obtained by removing v hydrogen atoms from an aralkyl group having 7 to 30 carbon atoms, for example, when v is 1, a group represented by the following formula (a) and a group represented by the following formula (b ) represents the basis and so on.

[化15] [式（a）及式（b）中，L 3及L 5表示碳數1～10的伸烷基，L 4及L 6表示單鍵或碳數1～10的伸烷基] [chemical 15] [In formula (a) and formula (b), L 3 and L 5 represent alkylene groups with 1 to 10 carbons, and L 4 and L 6 represent single bonds or alkylene groups with 1 to 10 carbons]

作為碳數1～10的伸烷基，例如可列舉：亞甲基、伸乙基、伸丙基、甲基伸乙基、伸丁基、1-甲基伸丙基、2-甲基伸丙基、1,2-二甲基伸丙基、1,3-二甲基伸丙基、1-甲基伸丁基、2-甲基伸丁基、3-甲基伸丁基、4-甲基伸丁基、2,4-二甲基伸丁基、1,3-二甲基伸丁基、伸戊基、伸己基、伸庚基、伸辛基、伸壬基、伸癸基等。Examples of the alkylene group having 1 to 10 carbon atoms include: methylene, ethylene, propylidene, methylethylene, butylene, 1-methylpropylene, 2-methylylene Propyl, 1,2-dimethylpropyl, 1,3-dimethylpropyl, 1-methylbutyl, 2-methylbutyl, 3-methylbutyl, 4 -Methylbutyl, 2,4-Dimethylbutyl, 1,3-Dimethylbutyl, Pentyl, Hexyl, Heptyl, Octyl, Nonyl, Decyl Base etc.

作為自碳數2～20的雜環基中去除v個氫原子而成的基，例如，於v為1的情況下，可列舉：2,5-吡啶二基、2,6-吡啶二基、2,5-嘧啶二基、2,5-噻吩二基、3,4-四氫呋喃二基、2,5-四氫呋喃二基、2,5-呋喃二基、3,4-噻唑二基、2,5-苯並呋喃二基、2,5-苯並噻吩二基、N-甲基吲哚-2,5-二基、2,5-苯並噻唑二基、2,5-苯並噁唑二基等二價雜環基。As a group obtained by removing v hydrogen atoms from a heterocyclic group having 2 to 20 carbon atoms, for example, when v is 1, 2,5-pyridinediyl, 2,6-pyridinediyl , 2,5-pyrimidinediyl, 2,5-thienediyl, 3,4-tetrahydrofurandiyl, 2,5-tetrahydrofurandiyl, 2,5-furandiyl, 3,4-thiazolyldiyl, 2 ,5-benzofurandiyl, 2,5-benzothiophenediyl, N-methylindole-2,5-diyl, 2,5-benzothiazyldiyl, 2,5-benzoxadiyl Divalent heterocyclic groups such as azolediyl.

作為式（2）中的R 2及R 3、以及所述式（2-1）中的R 4a所表示的鹵素原子的例子，可列舉氟原子、氯原子、溴原子及碘原子。 Examples of the halogen atom represented by R 2 and R 3 in the formula (2) and R 4a in the formula (2-1) include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom.

就於溶劑（J）中的溶解性、及/或組成物的顯影性的觀點而言，式（2）所表示的結構的較佳例是下述式（2a）所表示的結構。A preferable example of the structure represented by the formula (2) is a structure represented by the following formula (2a) from the viewpoint of the solubility in the solvent (J) and/or the developability of the composition.

[化16] [式（2a）中，L'表示硫原子或NR 50，R 50表示直鏈狀、分支鏈狀或環狀的碳數1～20的烷基，R 2、R 3、R 4、s及t表示與所述相同的含義] [chemical 16] [In formula (2a), L' represents a sulfur atom or NR 50 , R 50 represents a linear, branched or cyclic alkyl group with 1 to 20 carbons, R 2 , R 3 , R 4 , s and t indicates the same meaning as stated]

就與所述相同的觀點而言，式（2）所表示的結構的其他較佳例是下述式（2b）所表示的結構。Another preferable example of the structure represented by the formula (2) is a structure represented by the following formula (2b) from the same viewpoint as above.

[化17] [式（2b）中，R 44表示羥基、羧基或下述式（2-2）所表示的基； [chemical 17] [In formula (2b), R 44 represents a hydroxyl group, a carboxyl group or a group represented by the following formula (2-2);

[化18] （式（2-2）中，L 11表示-O-或*-OCO-，*表示與L 12的鍵結鍵，L 12表示碳數1～20的伸烷基，該伸烷基可由1個～3個-O-中斷，R 44a表示OR 55或COOR 55，R 55表示氫原子或碳數1～6的烷基）] [chemical 18] (In formula (2-2), L 11 represents -O- or *-OCO-, * represents a bond with L 12 , L 12 represents an alkylene group with 1 to 20 carbons, and the alkylene group can be formed by 1 One to three -O- interrupted, R 44a represents OR 55 or COOR 55 , R 55 represents a hydrogen atom or an alkyl group with 1 to 6 carbons)]

R 44較佳為式（2-2）所表示的基。於該情況下，就肟化合物（1）於溶劑（J）中的溶解性及組成物的顯影性的方面而言有利。 R 44 is preferably a group represented by formula (2-2). In this case, it is advantageous in terms of the solubility of the oxime compound (1) in the solvent (J) and the developability of the composition.

L 12所表示的伸烷基的碳數較佳為1～10，更佳為1～4。 R 44a較佳為羥基或羧基，更佳為羥基。 The carbon number of the alkylene group represented by L 12 is preferably 1-10, more preferably 1-4. R 44a is preferably a hydroxyl group or a carboxyl group, more preferably a hydroxyl group.

具有式（2）所表示的第二分子結構的肟化合物（1）的製造方法並無特別限定，例如可利用日本專利特開2011-132215號公報中記載的方法來製造。The method for producing the oxime compound (1) having the second molecular structure represented by formula (2) is not particularly limited, and can be produced, for example, by the method described in JP-A-2011-132215.

與式（1）所表示的第一分子結構連結的第二分子結構的另一例是下述式（3）所表示的結構。 式（3）中「*」所表示的鍵結鍵與式（1）中「*」所表示的鍵結鍵直接鍵結。即，於第二分子結構是式（3）所表示的結構的情況下，式（3）中的具有「-*」的苯環與式（1）中的具有「-*」的羰基直接鍵結。 Another example of the second molecular structure linked to the first molecular structure represented by formula (1) is a structure represented by the following formula (3). The bond represented by "*" in formula (3) is directly bonded to the bond represented by "*" in formula (1). That is, when the second molecular structure is a structure represented by formula (3), the benzene ring having "-*" in formula (3) is directly bonded to the carbonyl group having "-*" in formula (1) Knot.

[化19] [chemical 19]

式（3）中，R 5表示氫原子、碳數1～20的烷基、碳數6～30的芳基、碳數7～30的芳基烷基或碳數2～20的雜環基。 於R 5所表示的基具有烷基部分的情況下，該烷基部分可為分支鏈狀，亦可為環狀。 R 5所表示的基的氫原子可經R 21、OR 21、COR 21、SR 21、NR 22R 23、CONR 22R 23、-NR 22-OR 23、-N(COR 22)-OCOR 23、NR 22COR 21、OCOR 21、COOR 21、-C(=N-OR 21)-R 22、-C(=N-OCOR 21)-R 22、SCOR 21、OCSR 21、COSR 21、CSOR 21、羥基、硝基、CN、鹵素原子、或COOR 21取代。 R 21、R 22及R 23表示與所述相同的含義。 R 21、R 22或R 23所表示的基的氫原子可經CN、鹵素原子、羥基或羧基取代。 於R 21、R 22及R 23所表示的基具有伸烷基部分的情況下，該伸烷基部分可由-O-、-S-、-COO-、-OCO-、-NR 24-、-NR 24CO-、-NR 24COO-、-OCONR 24-、-SCO-、-COS-、-OCS-或-CSO-中斷1次～5次。 R 24表示與所述相同的含義。 於R 21、R 22及R 23所表示的基具有烷基部分的情況下，該烷基部分可為分支鏈狀，亦可為環狀，另外，R 22與R 23可一起形成環。 R 6、R 7、R 8及R 9分別獨立地表示R 61、OR 61、SR 61、COR 62、CONR 63R 64、NR 65COR 61、OCOR 61、COOR 62、SCOR 61、OCSR 61、COSR 62、CSOR 61、羥基、硝基、CN或鹵素原子。 R 61、R 62、R 63、R 64及R 65分別獨立地表示氫原子、碳數1～20的烷基、碳數6～30的芳基、碳數7～30的芳基烷基或碳數2～20的雜環基。 R 61、R 62、R 63、R 64或R 65所表示的基的氫原子可經OR 21、COR 21、SR 21、NR 22Ra 23、CONR 22R 23、-NR 22-OR 23、-N(COR 22)-OCOR 23、-C(=N-OR 21)-R 22、-C(=N-OCOR 21)-R 22、CN、鹵素原子、或COOR 21取代。 R 6與R 7、R 7與R 8以及R 8與R 9分別可一起形成環。 *表示與肟化合物（1）所具有的第一分子結構的鍵結鍵。 In formula (3), R5 represents a hydrogen atom, an alkyl group with 1 to 20 carbons, an aryl group with 6 to 30 carbons, an arylalkyl group with 7 to 30 carbons, or a heterocyclic group with 2 to 20 carbons . When the group represented by R 5 has an alkyl portion, the alkyl portion may be branched or cyclic. The hydrogen atom of the group represented by R 5 can be passed through R 21 , OR 21 , COR 21 , SR 21 , NR 22 R 23 , CONR 22 R 23 , -NR 22 -OR 23 , -N(COR 22 )-OCOR 23 , NR 22 COR 21 , OCOR 21 , COOR 21 , -C(=N-OR 21 )-R 22 , -C ( =N-OCOR 21 )-R 22 , SCOR 21 , OCSR 21 , COSR 21 , CSOR 21 , hydroxyl , nitro, CN, halogen atom, or COOR 21 substitution. R 21 , R 22 and R 23 represent the same meanings as described above. The hydrogen atom of the group represented by R 21 , R 22 or R 23 may be substituted by CN, a halogen atom, a hydroxyl group or a carboxyl group. When the groups represented by R 21 , R 22 and R 23 have an alkylene part, the alkylene part can be represented by -O-, -S-, -COO-, -OCO-, -NR 24 -, - NR 24 CO-, -NR 24 COO-, -OCONR 24 -, -SCO-, -COS-, -OCS- or -CSO- interrupted 1 to 5 times. R 24 represents the same meaning as described above. When the groups represented by R 21 , R 22 and R 23 have an alkyl portion, the alkyl portion may be branched or cyclic, and R 22 and R 23 may form a ring together. R 6 , R 7 , R 8 and R 9 independently represent R 61 , OR 61 , SR 61 , COR 62 , CONR 63 R 64 , NR 65 COR 61 , OCOR 61 , COOR 62 , SCOR 61 , OCSR 61 , COSR 62 , CSOR 61 , hydroxyl group, nitro group, CN or halogen atom. R 61 , R 62 , R 63 , R 64 and R 65 each independently represent a hydrogen atom, an alkyl group with 1 to 20 carbons, an aryl group with 6 to 30 carbons, an arylalkyl group with 7 to 30 carbons, or A heterocyclic group having 2 to 20 carbon atoms. The hydrogen atom of the group represented by R 61 , R 62 , R 63 , R 64 or R 65 can be treated by OR 21 , COR 21 , SR 21 , NR 22 Ra 23 , CONR 22 R 23 , -NR 22 -OR 23 , - Substituted by N(COR 22 )-OCOR 23 , -C(=N-OR 21 )-R 22 , -C(=N-OCOR 21 )-R 22 , CN, a halogen atom, or COOR 21 . R 6 and R 7 , R 7 and R 8 , and R 8 and R 9 may form a ring together. * indicates a bond with the first molecular structure of the oxime compound (1).

式（3）中的R 5、R 21、R 22、R 23、R 24、R 61、R 62、R 63、R 64及R 65所表示的碳數1～20的烷基、碳數6～30的芳基、碳數7～30的芳烷基、碳數2～20的雜環基的例子與針對式（1）中的R 11、R 12、R 13、R 21、R 22、R 23及R 24的例子相同。 An alkyl group having 1 to 20 carbons represented by R 5 , R 21 , R 22 , R 23 , R 24 , R 61 , R 62 , R 63 , R 64 and R 65 in the formula (3), and a carbon number of 6 Examples of an aryl group with ∼30 carbon atoms, an aralkyl group with 7 to 30 carbon atoms, and a heterocyclic group with 2 to 20 carbon atoms are the same as for R 11 , R 12 , R 13 , R 21 , R 22 , Examples of R 23 and R 24 are the same.

式（3）中的R 22與R 23可一起形成環是指R 22與R 23可一起與所連接的氮原子、碳原子或氧原子一同形成環。 式（3）中的R 22與R 23可一起形成的環的例子和針對式（1）中的Ra 12與Ra 13以及Ra 22與Ra 23可一起形成的環的例子相同。 The fact that R 22 and R 23 in formula (3) can form a ring together means that R 22 and R 23 can form a ring together with the nitrogen atom, carbon atom or oxygen atom to which they are connected. Examples of rings that can be formed together by R 22 and R 23 in formula (3) are the same as examples of rings that can be formed by Ra 12 and Ra 13 and Ra 22 and Ra 23 in formula (1).

作為式（3）中的R 6、R 7、R 8及R 9所表示的鹵素原子、可取代R 5、R 21、R 22、R 23、R 61、R 62、R 63、R 64及R 65的氫原子的鹵素原子的例子，可列舉：氟原子、氯原子、溴原子及碘原子。 As a halogen atom represented by R 6 , R 7 , R 8 and R 9 in formula (3), R 5 , R 21 , R 22 , R 23 , R 61 , R 62 , R 63 , R 64 and Examples of the halogen atom of the hydrogen atom of R65 include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom.

就於溶劑（J）中的溶解性、及/或組成物的顯影性的觀點而言，於一較佳形態中，R 5是下述式（3-1）所表示的基。 From the viewpoint of the solubility in the solvent (J) and/or the developability of the composition, in a preferred embodiment, R 5 is a group represented by the following formula (3-1).

[化20] [式（3-1）中，Z表示自碳數1～20的烷基中去除1個氫原子而成的基、自碳數6～30的芳基中去除1個氫原子而成的基、自碳數7～30的芳烷基中去除1個氫原子而成的基或自碳數2～20的雜環基中去除1個氫原子而成的基， 於Z所表示的基具有伸烷基部分的情況下，該伸烷基部分可由-O-、-S-、-COO-、-OCO-、-NR 24-、-NR 24COO-、-OCONR 24-、-SCO-、-COS-、-OCS-或-CSO-中斷1次～5次，該伸烷基部分可為分支鏈狀，亦可為環狀， R 21、R 22及R 24表示與所述相同的含義] [chemical 20] [In formula (3-1), Z represents a group obtained by removing one hydrogen atom from an alkyl group having 1 to 20 carbons, and a group obtained by removing one hydrogen atom from an aryl group having 6 to 30 carbons. , a group obtained by removing one hydrogen atom from an aralkyl group having 7 to 30 carbons, or a group obtained by removing one hydrogen atom from a heterocyclic group having 2 to 20 carbons, and the group represented by Z has In the case of an alkylene moiety, the alkylene moiety can be represented by -O-, -S-, -COO-, -OCO-, -NR 24 -, -NR 24 COO-, -OCONR 24 -, -SCO-, -COS-, -OCS-, or -CSO- are interrupted 1 to 5 times, the alkylene moiety can be branched or cyclic, and R 21 , R 22 and R 24 have the same meanings as described above ]

就與所述相同的觀點而言，式（3-1）中的Z較佳為亞甲基、伸乙基或伸苯基。 就與所述相同的觀點而言，式（3-1）中的R 21及R 22較佳為碳數1～20的烷基或碳數6～30的芳基，更佳為甲基、乙基或苯基。 就與所述相同的觀點而言，於另一較佳形態中，R 7為硝基。 From the same viewpoint as above, Z in the formula (3-1) is preferably a methylene group, an ethylene group or a phenylene group. From the same viewpoint as above, R 21 and R 22 in formula (3-1) are preferably an alkyl group with 1 to 20 carbons or an aryl group with 6 to 30 carbons, more preferably methyl, ethyl or phenyl. From the same viewpoint as above, in another preferred embodiment, R 7 is nitro.

具有式（3）所表示的第二分子結構的肟化合物（1）的製造方法並無特別限定，例如可利用日本專利特開2000-80068號公報及日本專利特開2011-178776號公報中記載的方法來製造。The production method of the oxime compound (1) having the second molecular structure represented by the formula (3) is not particularly limited, and for example, the methods described in Japanese Patent Laid-Open No. 2000-80068 and Japanese Patent Laid-Open No. 2011-178776 can be used. method to manufacture.

與式（1）所表示的第一分子結構連結的第二分子結構的又一例是下述式（4）所表示的結構。 式（4）中「*」所表示的鍵結鍵與式（1）中「*」所表示的鍵結鍵直接鍵結。即，於第二分子結構是式（4）所表示的結構的情況下，式（4）中的具有「-*」的苯環與式（1）中的具有「-*」的羰基直接鍵結。 Still another example of the second molecular structure linked to the first molecular structure represented by formula (1) is a structure represented by the following formula (4). The bond represented by "*" in formula (4) is directly bonded to the bond represented by "*" in formula (1). That is, when the second molecular structure is a structure represented by formula (4), the benzene ring having "-*" in formula (4) is directly bonded to the carbonyl group having "-*" in formula (1) Knot.

[化21] [chem 21]

式（4）中，R 71表示氫原子、碳數1～20的烷基、碳數6～30的芳基、碳數7～30的芳烷基或碳數2～20的雜環基。 於R 71所表示的基具有烷基部分的情況下，該烷基部分可為分支鏈狀，亦可為環狀。 R 71所表示的基的氫原子可經R 21、OR 21、COR 21、SR 21、NR 22R 23、CONR 22R 23、-NR 22-OR 23、-N(COR 22)-OCOR 23、NR 22COR 21、OCOR 21、COOR 21、-C(=N-OR 21)-R 22、-C(=N-OCOR 21)-R 22、SCOR 21、OCSR 21、COSR 21、CSOR 21、羥基、硝基、CN、鹵素原子、或COOR 21取代。 R 21、R 22及R 23表示與所述相同的含義。 R 21、R 22或R 23所表示的基的氫原子可經CN、鹵素原子、羥基或羧基取代。 於R 21、R 22及R 23所表示的基具有伸烷基部分的情況下，該伸烷基部分可由-O-、-S-、-COO-、-OCO-、-NR 24-、-NR 24CO-、-NR 24COO-、-OCONR 24-、-SCO-、-COS-、-OCS-或-CSO-中斷1次～5次。 R 24表示與所述相同的含義。 於R 21、R 22及R 23所表示的基具有烷基部分的情況下，該烷基部分可為分支鏈狀，亦可為環狀，另外，R 22與R 23可一起形成環。 R 72、R 73及三個R 74分別獨立地表示R 61、OR 61、SR 61、COR 62、CONR 63R 64、NR 65COR 61、OCOR 61、COOR 62、SCOR 61、OCSR 61、COSR 62、CSOR 61、羥基、硝基、CN或鹵素原子。 R 61、R 62、R 63、R 64及R 65分別獨立地表示氫原子、碳數1～20的烷基、碳數6～30的芳基、碳數7～30的芳基烷基或碳數2～20的雜環基。 R 61、R 62、R 63、R 64或R 65所表示的基的氫原子可經OR 21、COR 21、SR 21、NR 22Ra 23、CONR 22R 23、-NR 22-OR 23、-N(COR 22)-OCOR 23、-C(=N-OR 21)-R 22、-C(=N-OCOR 21)-R 22、CN、鹵素原子、或COOR 21取代。 R 72與R 73以及兩個R 74分別可一起形成環。 *表示與肟化合物（1）所具有的第一分子結構的鍵結鍵。 In formula (4), R 71 represents a hydrogen atom, an alkyl group having 1 to 20 carbons, an aryl group having 6 to 30 carbons, an aralkyl group having 7 to 30 carbons, or a heterocyclic group having 2 to 20 carbons. When the group represented by R 71 has an alkyl portion, the alkyl portion may be branched or cyclic. The hydrogen atom of the group represented by R 71 can be replaced by R 21 , OR 21 , COR 21 , SR 21 , NR 22 R 23 , CONR 22 R 23 , -NR 22 -OR 23 , -N(COR 22 )-OCOR 23 , NR 22 COR 21 , OCOR 21 , COOR 21 , -C(=N-OR 21 )-R 22 , -C ( =N-OCOR 21 )-R 22 , SCOR 21 , OCSR 21 , COSR 21 , CSOR 21 , hydroxyl , nitro, CN, halogen atom, or COOR 21 substitution. R 21 , R 22 and R 23 represent the same meanings as described above. The hydrogen atom of the group represented by R 21 , R 22 or R 23 may be substituted by CN, a halogen atom, a hydroxyl group or a carboxyl group. When the groups represented by R 21 , R 22 and R 23 have an alkylene part, the alkylene part can be represented by -O-, -S-, -COO-, -OCO-, -NR 24 -, - NR 24 CO-, -NR 24 COO-, -OCONR 24 -, -SCO-, -COS-, -OCS- or -CSO- interrupted 1 to 5 times. R 24 represents the same meaning as described above. When the groups represented by R 21 , R 22 and R 23 have an alkyl portion, the alkyl portion may be branched or cyclic, and R 22 and R 23 may form a ring together. R 72 , R 73 and three R 74 independently represent R 61 , OR 61 , SR 61 , COR 62 , CONR 63 R 64 , NR 65 COR 61 , OCOR 61 , COOR 62 , SCOR 61 , OCSR 61 , COSR 62 , CSOR 61 , hydroxyl, nitro, CN or halogen atoms. R 61 , R 62 , R 63 , R 64 and R 65 each independently represent a hydrogen atom, an alkyl group with 1 to 20 carbons, an aryl group with 6 to 30 carbons, an arylalkyl group with 7 to 30 carbons, or A heterocyclic group having 2 to 20 carbon atoms. The hydrogen atom of the group represented by R 61 , R 62 , R 63 , R 64 or R 65 can be treated by OR 21 , COR 21 , SR 21 , NR 22 Ra 23 , CONR 22 R 23 , -NR 22 -OR 23 , - Substituted by N(COR 22 )-OCOR 23 , -C(=N-OR 21 )-R 22 , -C(=N-OCOR 21 )-R 22 , CN, a halogen atom, or COOR 21 . R 72 and R 73 and two R 74 may form a ring together. * indicates a bond with the first molecular structure of the oxime compound (1).

式（4）中的R 71、R 21、R 22、R 23、R 24、R 61、R 62、R 63、R 64及R 65所表示的碳數1～20的烷基、碳數6～30的芳基、碳數7～30的芳烷基、碳數2～20的雜環基的例子與針對式（1）中的R 11、R 12、R 13、R 21、R 22、R 23及R 24的例子相同。 An alkyl group having 1 to 20 carbons represented by R 71 , R 21 , R 22 , R 23 , R 24 , R 61 , R 62 , R 63 , R 64 and R 65 in the formula (4), an alkyl group having 6 carbon atoms Examples of an aryl group with ∼30 carbon atoms, an aralkyl group with 7 to 30 carbon atoms, and a heterocyclic group with 2 to 20 carbon atoms are the same as for R 11 , R 12 , R 13 , R 21 , R 22 , Examples of R 23 and R 24 are the same.

式（4）中的R 22與R 23可一起形成環是指R 22與R 23可一起與所連接的氮原子、碳原子或氧原子一同形成環。 式（4）中的R 22與R 23可一起形成的環的例子和針對式（1）中的Ra 12與Ra 13以及Ra 22與Ra 23可一起形成的環的例子相同。 R 22 and R 23 in formula (4) may form a ring together means that R 22 and R 23 may form a ring together with the nitrogen atom, carbon atom or oxygen atom to which they are connected. Examples of rings that can be formed together by R 22 and R 23 in formula (4) are the same as examples of rings that can be formed by Ra 12 and Ra 13 and Ra 22 and Ra 23 in formula (1).

作為式（4）中的R 72、R 73及R 74所表示的鹵素原子、可取代R 71、R 21、R 22、R 23、R 61、R 62、R 63、R 64及R 65的氫原子的鹵素原子的例子，可列舉：氟原子、氯原子、溴原子及碘原子。 As a halogen atom represented by R 72 , R 73 and R 74 in formula (4), which may be substituted for R 71 , R 21 , R 22 , R 23 , R 61 , R 62 , R 63 , R 64 and R 65 Examples of the halogen atom of the hydrogen atom include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom.

具有式（4）所表示的第二分子結構的肟化合物（1）的製造方法並無特別限定，例如可利用國際公開第2017/051680號及國際公開第2020/004601號中記載的方法來製造。The production method of the oxime compound (1) having the second molecular structure represented by formula (4) is not particularly limited, for example, it can be produced by the methods described in International Publication No. 2017/051680 and International Publication No. 2020/004601 .

與式（1）所表示的第一分子結構連結的第二分子結構的又一例是下述式（5）所表示的結構。 式（5）中「*」所表示的鍵結鍵與式（1）中「*」所表示的鍵結鍵直接鍵結。即，於第二分子結構是式（5）所表示的結構的情況下，式（5）中的具有「-*」的吡咯環與式（1）中的具有「-*」的羰基直接鍵結。 Still another example of the second molecular structure linked to the first molecular structure represented by formula (1) is a structure represented by the following formula (5). The bond represented by "*" in formula (5) is directly bonded to the bond represented by "*" in formula (1). That is, when the second molecular structure is a structure represented by formula (5), the pyrrole ring having "-*" in formula (5) is directly bonded to the carbonyl group having "-*" in formula (1) Knot.

[化22] [chem 22]

式（5）中，R 81表示氫原子、碳數1～20的烷基、碳數6～30的芳基、碳數7～30的芳烷基或碳數2～20的雜環基。 於R 81所表示的基具有烷基部分的情況下，該烷基部分可為分支鏈狀，亦可為環狀。 R 81所表示的基的氫原子可經R 21、OR 21、COR 21、SR 21、NR 22R 23、CONR 22R 23、-NR 22-OR 23、-N(COR 22)-OCOR 23、NR 22COR 21、OCOR 21、COOR 21、-C(=N-OR 21)-R 22、-C(=N-OCOR 21)-R 22、SCOR 21、OCSR 21、COSR 21、CSOR 21、羥基、硝基、CN、鹵素原子、或COOR 21取代。 R 21、R 22及R 23表示與所述相同的含義。 R 21、R 22或R 23所表示的基的氫原子可經CN、鹵素原子、羥基或羧基取代。 於R 21、R 22及R 23所表示的基具有伸烷基部分的情況下，該伸烷基部分可由-O-、-S-、-COO-、-OCO-、-NR 24-、-NR 24CO-、-NR 24COO-、-OCONR 24-、-SCO-、-COS-、-OCS-或-CSO-中斷1次～5次。 R 24表示與所述相同的含義。 於R 21、R 22及R 23所表示的基具有烷基部分的情況下，該烷基部分可為分支鏈狀，亦可為環狀，另外，R 22與R 23可一起形成環。 R 82、R 83、R 84、R 85及R 86分別獨立地表示R 61、OR 61、SR 61、COR 62、CONR 63R 64、NR 65COR 61、OCOR 61、COOR 62、SCOR 61、OCSR 61、COSR 62、CSOR 61、羥基、硝基、CN或鹵素原子。 R 61、R 62、R 63、R 64及R 65分別獨立地表示氫原子、碳數1～20的烷基、碳數6～30的芳基、碳數7～30的芳基烷基或碳數2～20的雜環基。 R 61、R 62、R 63、R 64或R 65所表示的基的氫原子可經OR 21、COR 21、SR 21、NR 22Ra 23、CONR 22R 23、-NR 22-OR 23、-N(COR 22)-OCOR 23、-C(=N-OR 21)-R 22、-C(=N-OCOR 21)-R 22、CN、鹵素原子、或COOR 21取代。 R 83與R 84、R 84與R 85以及R 85與R 86分別可一起形成環。 *表示與肟化合物（1）所具有的第一分子結構的鍵結鍵。 In formula (5), R 81 represents a hydrogen atom, an alkyl group having 1 to 20 carbons, an aryl group having 6 to 30 carbons, an aralkyl group having 7 to 30 carbons, or a heterocyclic group having 2 to 20 carbons. When the group represented by R 81 has an alkyl portion, the alkyl portion may be branched or cyclic. The hydrogen atom of the group represented by R 81 can be replaced by R 21 , OR 21 , COR 21 , SR 21 , NR 22 R 23 , CONR 22 R 23 , -NR 22 -OR 23 , -N(COR 22 )-OCOR 23 , NR 22 COR 21 , OCOR 21 , COOR 21 , -C(=N-OR 21 )-R 22 , -C ( =N-OCOR 21 )-R 22 , SCOR 21 , OCSR 21 , COSR 21 , CSOR 21 , hydroxyl , nitro, CN, halogen atom, or COOR 21 substitution. R 21 , R 22 and R 23 represent the same meanings as described above. The hydrogen atom of the group represented by R 21 , R 22 or R 23 may be substituted by CN, a halogen atom, a hydroxyl group or a carboxyl group. When the groups represented by R 21 , R 22 and R 23 have an alkylene part, the alkylene part can be represented by -O-, -S-, -COO-, -OCO-, -NR 24 -, - NR 24 CO-, -NR 24 COO-, -OCONR 24 -, -SCO-, -COS-, -OCS- or -CSO- interrupted 1 to 5 times. R 24 represents the same meaning as described above. When the groups represented by R 21 , R 22 and R 23 have an alkyl portion, the alkyl portion may be branched or cyclic, and R 22 and R 23 may form a ring together. R 82 , R 83 , R 84 , R 85 and R 86 independently represent R 61 , OR 61 , SR 61 , COR 62 , CONR 63 R 64 , NR 65 COR 61 , OCOR 61 , COOR 62 , SCOR 61 , OCSR 61 , COSR 62 , CSOR 61 , hydroxyl group, nitro group, CN or a halogen atom. R 61 , R 62 , R 63 , R 64 and R 65 each independently represent a hydrogen atom, an alkyl group with 1 to 20 carbons, an aryl group with 6 to 30 carbons, an arylalkyl group with 7 to 30 carbons, or A heterocyclic group having 2 to 20 carbon atoms. The hydrogen atom of the group represented by R 61 , R 62 , R 63 , R 64 or R 65 can be treated by OR 21 , COR 21 , SR 21 , NR 22 Ra 23 , CONR 22 R 23 , -NR 22 -OR 23 , - Substituted by N(COR 22 )-OCOR 23 , -C(=N-OR 21 )-R 22 , -C(=N-OCOR 21 )-R 22 , CN, a halogen atom, or COOR 21 . R 83 and R 84 , R 84 and R 85 , and R 85 and R 86 may form a ring together. * indicates a bond with the first molecular structure of the oxime compound (1).

式（5）中的R 81、R 21、R 22、R 23、R 24、R 61、R 62、R 63、R 64及R 65所表示的碳數1～20的烷基、碳數6～30的芳基、碳數7～30的芳烷基、碳數2～20的雜環基的例子與針對式（1）中的R 11、R 12、R 13、R 21、R 22、R 23及R 24的例子相同。 An alkyl group having 1 to 20 carbon atoms represented by R 81 , R 21 , R 22 , R 23 , R 24 , R 61 , R 62 , R 63 , R 64 , and R 65 in formula (5), and an alkyl group having 6 carbon atoms. Examples of an aryl group with ∼30 carbon atoms, an aralkyl group with 7 to 30 carbon atoms, and a heterocyclic group with 2 to 20 carbon atoms are the same as for R 11 , R 12 , R 13 , R 21 , R 22 , Examples of R 23 and R 24 are the same.

式（5）中的R 22與R 23可一起形成環是指R 22與R 23可一起與所連接的氮原子、碳原子或氧原子一同形成環。 式（5）中的R 22與R 23可一起形成的環的例子和針對式（1）中的Ra 12與Ra 13以及Ra 22與Ra 23可一起形成的環的例子相同。 R 22 and R 23 in formula (5) may form a ring together means that R 22 and R 23 may form a ring together with the nitrogen atom, carbon atom or oxygen atom to which they are connected. Examples of rings that can be formed together by R 22 and R 23 in formula (5) are the same as examples of rings that can be formed by Ra 12 and Ra 13 and Ra 22 and Ra 23 in formula (1).

作為式（5）中的R 82、R 83、R 84、R 85及R 86所表示的鹵素原子、可取代R 81、R 21、R 22、R 23、R 61、R 62、R 63、R 64及R 65的氫原子的鹵素原子的例子，可列舉：氟原子、氯原子、溴原子及碘原子。 As a halogen atom represented by R 82 , R 83 , R 84 , R 85 and R 86 in formula (5) , R 81 , R 21 , R 22 , R 23 , R 61 , R 62 , R 63 , Examples of the halogen atom of the hydrogen atom of R 64 and R 65 include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom.

具有式（5）所表示的第二分子結構的肟化合物（1）的製造方法並無特別限定，例如可利用國際公開第2017/051680號及國際公開第2020/004601號中記載的方法來製造。The production method of the oxime compound (1) having the second molecular structure represented by formula (5) is not particularly limited, for example, it can be produced by the methods described in International Publication No. 2017/051680 and International Publication No. 2020/004601 .

與式（1）所表示的第一分子結構連結的第二分子結構的又一例是下述式（6）所表示的結構。 式（6）中「*」所表示的鍵結鍵與式（1）中「*」所表示的鍵結鍵直接鍵結。即，於第二分子結構是式（6）所表示的結構的情況下，式（6）中的具有「-*」的苯環與式（1）中的具有「-*」的羰基直接鍵結。 Still another example of the second molecular structure linked to the first molecular structure represented by formula (1) is a structure represented by the following formula (6). The bond represented by "*" in formula (6) is directly bonded to the bond represented by "*" in formula (1). That is, when the second molecular structure is a structure represented by formula (6), the benzene ring having "-*" in formula (6) is directly bonded to the carbonyl group having "-*" in formula (1) Knot.

[化23] [chem 23]

式（6）中，四個R 91、R 92、R 93、R 94、R 95、R 96及R 97分別獨立地表示R 61、OR 61、SR 61、COR 62、CONR 63R 64、NR 65COR 61、OCOR 61、COOR 62、SCOR 61、OCSR 61、COSR 62、CSOR 61、羥基、硝基、CN或鹵素原子。 R 61、R 62、R 63、R 64及R 65分別獨立地表示氫原子、碳數1～20的烷基、碳數6～30的芳基、碳數7～30的芳基烷基或碳數2～20的雜環基。 R 61、R 62、R 63、R 64或R 65所表示的基的氫原子可經OR 21、COR 21、SR 21、NR 22Ra 23、CONR 22R 23、-NR 22-OR 23、-N(COR 22)-OCOR 23、-C(=N-OR 21)-R 22、-C(=N-OCOR 21)-R 22、CN、鹵素原子、或COOR 21取代。 R 21、R 22及R 23表示與所述相同的含義。 R 92與R 93、R 94與R 95、R 95與R 96以及R 96與R 97分別可一起形成環。 *表示與肟化合物（1）所具有的第一分子結構的鍵結鍵。 In formula (6), four R 91 , R 92 , R 93 , R 94 , R 95 , R 96 and R 97 independently represent R 61 , OR 61 , SR 61 , COR 62 , CONR 63 R 64 , NR 65 COR 61 , OCOR 61 , COOR 62 , SCOR 61 , OCSR 61 , COSR 62 , CSOR 61 , hydroxyl group, nitro group, CN or a halogen atom. R 61 , R 62 , R 63 , R 64 and R 65 each independently represent a hydrogen atom, an alkyl group with 1 to 20 carbons, an aryl group with 6 to 30 carbons, an arylalkyl group with 7 to 30 carbons, or A heterocyclic group having 2 to 20 carbon atoms. The hydrogen atom of the group represented by R 61 , R 62 , R 63 , R 64 or R 65 can be treated by OR 21 , COR 21 , SR 21 , NR 22 Ra 23 , CONR 22 R 23 , -NR 22 -OR 23 , - Substituted by N(COR 22 )-OCOR 23 , -C(=N-OR 21 )-R 22 , -C(=N-OCOR 21 )-R 22 , CN, a halogen atom, or COOR 21 . R 21 , R 22 and R 23 represent the same meanings as described above. R 92 and R 93 , R 94 and R 95 , R 95 and R 96 , and R 96 and R 97 may form a ring together. * indicates a bond with the first molecular structure of the oxime compound (1).

式（6）中的R 21、R 22、R 23、R 61、R 62、R 63、R 64及R 65所表示的碳數1～20的烷基、碳數6～30的芳基、碳數7～30的芳烷基、碳數2～20的雜環基的例子與針對式（1）中的R 11、R 12、R 13、R 21、R 22及R 23的例子相同。 R 21 , R 22 , R 23 , R 61 , R 62 , R 63 , R 64 , and R 65 in formula (6) represent an alkyl group having 1 to 20 carbon atoms, an aryl group having 6 to 30 carbon atoms, Examples of the aralkyl group having 7 to 30 carbons and the heterocyclic group having 2 to 20 carbons are the same as those for R 11 , R 12 , R 13 , R 21 , R 22 and R 23 in formula (1).

式（6）中的R 22與R 23可一起形成環是指R 22與R 23可一起與所連接的氮原子、碳原子或氧原子一同形成環。 式（6）中的R 22與R 23可一起形成的環的例子和針對式（1）中的Ra 12與Ra 13以及Ra 22與Ra 23可一起形成的環的例子相同。 R 22 and R 23 in formula (6) may form a ring together means that R 22 and R 23 may form a ring together with the nitrogen atom, carbon atom or oxygen atom to which they are connected. Examples of rings that can be formed together by R 22 and R 23 in formula (6) are the same as examples of rings that can be formed by Ra 12 and Ra 13 and Ra 22 and Ra 23 in formula (1).

作為式（6）中的R 91、R 92、R 93、R 94、R 95、R 96及R 97所表示的鹵素原子、可取代R 21、R 22、R 23、R 61、R 62、R 63、R 64及R 65的氫原子的鹵素原子的例子，可列舉：氟原子、氯原子、溴原子及碘原子。 As a halogen atom represented by R 91 , R 92 , R 93 , R 94 , R 95 , R 96 and R 97 in formula (6), R 21 , R 22 , R 23 , R 61 , R 62 , Examples of the halogen atom of the hydrogen atom of R 63 , R 64 and R 65 include a fluorine atom, a chlorine atom, a bromine atom and an iodine atom.

具有式（6）所表示的第二分子結構的肟化合物（1）的製造方法並無特別限定，例如可利用國際公開第2017/051680號及國際公開第2020/004601號中記載的方法來製造。The production method of the oxime compound (1) having the second molecular structure represented by formula (6) is not particularly limited, for example, it can be produced by the methods described in International Publication No. 2017/051680 and International Publication No. 2020/004601 .

光聚合起始劑的其他例為肟化合物（1）以外的其他光聚合起始劑。作為其他光聚合起始劑，可列舉：肟化合物（1）以外的肟化合物、苯烷基酮化合物、聯咪唑化合物、三嗪化合物及醯基膦化合物。Another example of the photopolymerization initiator is other photopolymerization initiators other than the oxime compound (1). Examples of other photopolymerization initiators include oxime compounds other than the oxime compound (1), phenalkone compounds, biimidazole compounds, triazine compounds, and acylphosphine compounds.

作為肟化合物（1）以外的肟化合物，可列舉具有下述式（d1）所表示的部分結構的肟化合物。*表示鍵結鍵。Examples of oxime compounds other than the oxime compound (1) include oxime compounds having a partial structure represented by the following formula (d1). * Indicates a bonded bond.

[化24] [chem 24]

作為具有式（d1）所表示的部分結構的肟化合物，例如可列舉：N-苯甲醯基氧基-1-(4-苯硫基苯基)丁烷-1-酮-2-亞胺、N-苯甲醯基氧基-1-(4-苯硫基苯基)辛烷-1-酮-2-亞胺、N-苯甲醯基氧基-1-(4-苯硫基苯基)-3-環戊基丙烷-1-酮-2-亞胺、N-乙醯氧基-1-[9-乙基-6-(2-甲基苯甲醯基)-9H-咔唑-3-基]乙烷-1-亞胺、N-乙醯氧基-1-[9-乙基-6-{2-甲基-4-(3,3-二甲基-2,4-二氧雜環戊烷基甲基氧基)苯甲醯基}-9H-咔唑-3-基]乙烷-1-亞胺、N-乙醯氧基-1-[9-乙基-6-(2-甲基苯甲醯基)-9H-咔唑-3-基]-3-環戊基丙烷-1-亞胺、N-苯甲醯基氧基-1-[9-乙基-6-(2-甲基苯甲醯基)-9H-咔唑-3-基]-3-環戊基丙烷-1-酮-2-亞胺；日本專利特開2011-132215號公報、國際公開2008/78678號、國際公開2008/78686號、國際公開2012/132558號記載的化合物等。亦可使用豔佳固（Irgacure）（註冊商標）OXE01、豔佳固（Irgacure）OXE02、豔佳固（Irgacure）OXE03（以上，巴斯夫（BASF）公司製造）；N-1919、NCI-930、NCI-831（以上，艾迪科（ADEKA）公司製造）等市售品。Examples of oxime compounds having a partial structure represented by formula (d1) include N-benzoyloxy-1-(4-phenylthiophenyl)butan-1-one-2-imine , N-benzoyloxy-1-(4-phenylthiophenyl)octane-1-one-2-imine, N-benzoyloxy-1-(4-phenylthio Phenyl)-3-cyclopentylpropane-1-one-2-imine, N-acetyloxy-1-[9-ethyl-6-(2-methylbenzoyl)-9H- Carbazol-3-yl]ethane-1-imine, N-acetyloxy-1-[9-ethyl-6-{2-methyl-4-(3,3-dimethyl-2 ,4-dioxolylmethyloxy)benzoyl}-9H-carbazol-3-yl]ethane-1-imine, N-acetyloxy-1-[9- Ethyl-6-(2-methylbenzoyl)-9H-carbazol-3-yl]-3-cyclopentylpropane-1-imine, N-benzoyloxy-1-[ 9-Ethyl-6-(2-methylbenzoyl)-9H-carbazol-3-yl]-3-cyclopentylpropane-1-one-2-imine; Japanese Patent Laid-Open 2011- Compounds described in Publication No. 132215, International Publication No. 2008/78678, International Publication No. 2008/78686, International Publication No. 2012/132558, etc. Irgacure (registered trademark) OXE01, Irgacure OXE02, Irgacure OXE03 (the above, manufactured by BASF) can also be used; N-1919, NCI-930, NCI Commercially available products such as -831 (above, manufactured by ADEKA Co., Ltd.).

其中，具有式（d1）所表示的部分結構的肟化合物較佳為選自由N-苯甲醯基氧基-1-(4-苯硫基苯基)丁烷-1-酮-2-亞胺、N-苯甲醯基氧基-1-(4-苯硫基苯基)辛烷-1-酮-2-亞胺及N-苯甲醯基氧基-1-(4-苯硫基苯基)-3-環戊基丙烷-1-酮-2-亞胺所組成的群組中的至少一種，更佳為N-苯甲醯基氧基-1-(4-苯硫基苯基)辛烷-1-酮-2-亞胺。Among them, the oxime compound having a partial structure represented by formula (d1) is preferably selected from N-benzoyloxy-1-(4-phenylthiophenyl)butan-1-one-2-ylidene Amine, N-benzoyloxy-1-(4-phenylthiophenyl)octan-1-one-2-imine and N-benzoyloxy-1-(4-phenylthio At least one of the group consisting of phenyl)-3-cyclopentylpropan-1-one-2-imine, more preferably N-benzoyloxy-1-(4-phenylthio phenyl)octan-1-one-2-imine.

苯烷基酮化合物是具有下述式（d2）所表示的部分結構或下述式（d3）所表示的部分結構的化合物。於該些部分結構中，苯環可具有取代基。The phenylalkyl ketone compound is a compound having a partial structure represented by the following formula (d2) or a partial structure represented by the following formula (d3). In these partial structures, the benzene ring may have a substituent.

[化25] [chem 25]

作為具有式（d2）所表示的結構的化合物，可列舉：2-甲基-2-嗎啉基-1-(4-甲硫基苯基)丙烷-1-酮、2-二甲基胺基-1-(4-嗎啉基苯基)-2-苄基丁烷-1-酮、2-(二甲基胺基)-2-[(4-甲基苯基)甲基]-1-[4-(4-嗎啉基)苯基]丁烷-1-酮等。亦可使用歐米萊德（OMNIRAD）（註冊商標）369、歐米萊德（OMNIRAD）907、歐米萊德（OMNIRAD）379（以上，IGM樹脂（IGM Resins）公司製造）等市售品。Examples of compounds having a structure represented by formula (d2) include: 2-methyl-2-morpholinyl-1-(4-methylthiophenyl)propan-1-one, 2-dimethylamine Base-1-(4-morpholinylphenyl)-2-benzylbutan-1-one, 2-(dimethylamino)-2-[(4-methylphenyl)methyl]- 1-[4-(4-morpholinyl)phenyl]butan-1-one, etc. Commercially available products such as OMNIRAD (registered trademark) 369, OMNIRAD 907, and OMNIRAD 379 (above, manufactured by IGM Resins Co., Ltd.) can also be used.

作為具有式（d3）所表示的結構的化合物，可列舉：2-羥基-2-甲基-1-苯基丙烷-1-酮、2-羥基-2-甲基-1-〔4-(2-羥基乙氧基)苯基〕丙烷-1-酮、1-羥基環己基苯基酮、2-羥基-2-甲基-1-(4-異丙烯基苯基)丙烷-1-酮的寡聚物、α,α-二乙氧基苯乙酮、苄基二甲基縮酮等。As a compound having a structure represented by formula (d3), 2-hydroxyl-2-methyl-1-phenylpropane-1-one, 2-hydroxyl-2-methyl-1-[4-( 2-Hydroxyethoxy)phenyl]propan-1-one, 1-hydroxycyclohexylphenylketone, 2-hydroxy-2-methyl-1-(4-isopropenylphenyl)propan-1-one oligomers, α,α-diethoxyacetophenone, benzyl dimethyl ketal, etc.

就感度的方面而言，作為苯烷基酮化合物，較佳為具有式（d2）所表示的結構的化合物。From the viewpoint of sensitivity, as the phenylalkyl ketone compound, a compound having a structure represented by formula (d2) is preferable.

作為聯咪唑化合物，例如可列舉式（d5）所表示的化合物。As a biimidazole compound, the compound represented by a formula (d5) is mentioned, for example.

[化26] [式（d5）中，R E～R J表示可具有取代基的碳數6～10的芳基] [chem 26] [In formula (d5), R E to R J represent an aryl group having 6 to 10 carbon atoms which may have a substituent]

作為碳數6～10的芳基，例如可列舉：苯基、甲苯甲醯基、二甲苯基、乙基苯基及萘基等，較佳為苯基。 作為取代基，例如可列舉鹵素原子、碳數1～4的烷氧基等。作為鹵素原子，例如可列舉氟原子、氯原子、溴原子、碘原子，較佳為氯原子。作為碳數1～4的烷氧基，例如可列舉甲氧基、乙氧基、丙氧基、丁氧基等，較佳為甲氧基。 Examples of the aryl group having 6 to 10 carbon atoms include phenyl, toluyl, xylyl, ethylphenyl, naphthyl and the like, preferably phenyl. As a substituent, a halogen atom, a C1-C4 alkoxy group etc. are mentioned, for example. Examples of the halogen atom include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom, preferably a chlorine atom. Examples of the alkoxy group having 1 to 4 carbon atoms include methoxy, ethoxy, propoxy, butoxy and the like, and methoxy is preferred.

作為聯咪唑化合物，例如可列舉：2,2'-雙(2-氯苯基)-4,4',5,5'-四苯基聯咪唑、2,2'-雙(2,3-二氯苯基)-4,4',5,5'-四苯基聯咪唑（例如，參照日本專利特開平06-75372號公報、日本專利特開平06-75373號公報等）、2,2'-雙(2-氯苯基)-4,4',5,5'-四苯基聯咪唑、2,2'-雙(2-氯苯基)-4,4',5,5'-四(烷氧基苯基)聯咪唑、2,2'-雙(2-氯苯基)-4,4',5,5'-四(二烷氧基苯基)聯咪唑、2,2'-雙(2-氯苯基)-4,4',5,5'-四(三烷氧基苯基)聯咪唑（例如，參照日本專利特公昭48-38403號公報、日本專利特開昭62-174204號公報等）、4,4',5,5'-位的苯基由烷氧羰基（carboalkoxy）取代的咪唑化合物（例如，參照日本專利特開平7-10913號公報等）等。其中，較佳為下述式所表示的化合物或該些的混合物。Examples of the biimidazole compound include: 2,2'-bis(2-chlorophenyl)-4,4',5,5'-tetraphenylbiimidazole, 2,2'-bis(2,3- Dichlorophenyl)-4,4',5,5'-tetraphenylbiimidazole (for example, refer to Japanese Patent Laid-Open No. 06-75372, Japanese Patent Laid-Open No. 06-75373, etc.), 2,2 '-Bis(2-chlorophenyl)-4,4',5,5'-tetraphenylbiimidazole, 2,2'-bis(2-chlorophenyl)-4,4',5,5' -Tetrakis(alkoxyphenyl)biimidazole, 2,2'-bis(2-chlorophenyl)-4,4',5,5'-tetrakis(dialkoxyphenyl)biimidazole, 2, 2'-bis(2-chlorophenyl)-4,4',5,5'-tetrakis(trialkoxyphenyl)biimidazole (for example, refer to Japanese Patent Publication No. 48-38403, Japanese Patent Patent KOKAI Publication No. 62-174204, etc.), imidazole compounds in which the 4,4', 5,5'-position phenyl groups are substituted by carboalkoxy (for example, refer to JP-A-7-10913, etc.) wait. Among them, compounds represented by the following formulas or mixtures thereof are preferred.

[化27] [chem 27]

作為三嗪化合物，例如可列舉：2,4-雙(三氯甲基)-6-(4-甲氧基苯基)-1,3,5-三嗪、2,4-雙(三氯甲基)-6-(4-甲氧基萘基)-1,3,5-三嗪、2,4-雙(三氯甲基)-6-胡椒基-1,3,5-三嗪、2,4-雙(三氯甲基)-6-(4-甲氧基苯乙烯基)-1,3,5-三嗪、2,4-雙(三氯甲基)-6-〔2-(5-甲基呋喃-2-基)乙烯基〕-1,3,5-三嗪、2,4-雙(三氯甲基)-6-〔2-(呋喃-2-基)乙烯基〕-1,3,5-三嗪、2,4-雙(三氯甲基)-6-〔2-(4-二乙基胺基-2-甲基苯基)乙烯基〕-1,3,5-三嗪、2,4-雙(三氯甲基)-6-〔2-(3,4-二甲氧基苯基)乙烯基〕-1,3,5-三嗪等。其中，較佳為2,4-雙(三氯甲基)-6-胡椒基-1,3,5-三嗪。Examples of triazine compounds include: 2,4-bis(trichloromethyl)-6-(4-methoxyphenyl)-1,3,5-triazine, 2,4-bis(trichloromethyl) Methyl)-6-(4-methoxynaphthyl)-1,3,5-triazine, 2,4-bis(trichloromethyl)-6-piperonyl-1,3,5-triazine , 2,4-bis(trichloromethyl)-6-(4-methoxystyryl)-1,3,5-triazine, 2,4-bis(trichloromethyl)-6-[ 2-(5-methylfuran-2-yl)vinyl]-1,3,5-triazine, 2,4-bis(trichloromethyl)-6-[2-(furan-2-yl) Vinyl]-1,3,5-triazine, 2,4-bis(trichloromethyl)-6-[2-(4-diethylamino-2-methylphenyl)vinyl]- 1,3,5-triazine, 2,4-bis(trichloromethyl)-6-[2-(3,4-dimethoxyphenyl)ethenyl]-1,3,5-triazine wait. Among them, 2,4-bis(trichloromethyl)-6-piperonyl-1,3,5-triazine is preferable.

作為醯基膦化合物，例如可列舉：雙(2,4,6-三甲基苯甲醯基)苯基氧化膦、(2,4,6-三甲基苯甲醯基)二苯基氧化膦等。亦可使用歐米萊德（OMNIRAD）（註冊商標）819（IGM樹脂（IGM Resins）公司製造）等市售品。Examples of the acylphosphine compound include: bis(2,4,6-trimethylbenzoyl)phenylphosphine oxide, (2,4,6-trimethylbenzoyl)diphenylphosphine oxide Phosphine etc. Commercially available products such as OMNIRAD (registered trademark) 819 (manufactured by IGM Resins) may also be used.

作為肟化合物（1）以外的其他光聚合起始劑的其他例子，例如可列舉：安息香、安息香甲醚、安息香乙醚、安息香異丙醚、安息香異丁醚等安息香化合物；二苯甲酮、鄰苯甲醯基苯甲酸甲酯、4-苯基二苯甲酮、4-苯甲醯基-4'-甲基二苯基硫醚、3,3',4,4'-四(第三丁基過氧化羰基)二苯甲酮、2,4,6-三甲基二苯甲酮、4,4'-雙(二乙基胺基)二苯甲酮等二苯甲酮化合物；9,10-菲醌、2-乙基蒽醌、樟腦醌等醌化合物；10-丁基-2-氯吖啶酮、苯偶醯、苯基乙醛酸甲酯、二茂鈦化合物等。As other examples of other photopolymerization initiators other than the oxime compound (1), for example, benzoin compounds such as benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, and benzoin isobutyl ether; Methyl benzoylbenzoate, 4-phenylbenzophenone, 4-benzoyl-4'-methyl diphenyl sulfide, 3,3',4,4'-tetra(third Butylperoxycarbonyl) benzophenone, 2,4,6-trimethylbenzophenone, 4,4'-bis(diethylamino)benzophenone and other benzophenone compounds;9 ,10-phenanthrenequinone, 2-ethylanthraquinone, camphorquinone and other quinone compounds; 10-butyl-2-chloroacridone, benzoyl, methyl phenylglyoxylate, titanocene compounds, etc.

於組成物包含聚合起始劑（F）的情況下，相對於聚合性化合物（E）100質量份，組成物中的聚合起始劑（F）的含量較佳為0.1質量份以上且較佳為300質量份以下、更佳為200質量份以下。另外，相對於樹脂（D）及聚合性化合物（E）的合計量100質量份，組成物中的聚合起始劑（F）的含量較佳為0.1質量份以上，更佳為0.5質量份以上，且較佳為30質量份以下，更佳為20質量份以下。若聚合起始劑（F）的含量處於所述範圍內，則存在組成物高感度化而縮短曝光時間的傾向，因此存在膜的生產性提高的傾向。When the composition contains the polymerization initiator (F), the content of the polymerization initiator (F) in the composition is preferably at least 0.1 parts by mass and preferably 100 parts by mass of the polymerizable compound (E). It is 300 mass parts or less, More preferably, it is 200 mass parts or less. In addition, the content of the polymerization initiator (F) in the composition is preferably at least 0.1 parts by mass, more preferably at least 0.5 parts by mass, based on 100 parts by mass of the total amount of the resin (D) and the polymerizable compound (E). , and preferably less than 30 parts by mass, more preferably less than 20 parts by mass. When the content of the polymerization initiator (F) is within the above range, the sensitivity of the composition tends to be increased and the exposure time tends to be shortened, so the productivity of the film tends to be improved.

[8]聚合起始助劑（F1） 組成物可進而一併包含聚合起始劑（F）以及聚合起始助劑（F1）。聚合起始助劑（F1）為用於促進藉由聚合起始劑（F）而開始的聚合性化合物（E）的聚合的化合物、或增感劑。作為聚合起始助劑（F1），可列舉：胺化合物、烷氧基蒽化合物、硫雜蒽酮化合物及羧酸化合物等。組成物亦可包含兩種以上的聚合起始助劑（F1）。 [8] Polymerization initiation aid (F1) The composition may further include a polymerization initiator (F) and a polymerization initiation aid (F1) together. The polymerization initiation aid (F1) is a compound or a sensitizer for accelerating the polymerization of the polymerizable compound (E) initiated by the polymerization initiator (F). Examples of the polymerization initiation aid (F1) include amine compounds, alkoxyanthracene compounds, thioxanthone compounds, and carboxylic acid compounds. The composition may contain two or more kinds of polymerization initiation aids (F1).

作為胺化合物，例如可列舉：三乙醇胺、甲基二乙醇胺、三異丙醇胺、4-二甲基胺基苯甲酸甲酯、4-二甲基胺基苯甲酸乙酯、4-二甲基胺基苯甲酸異戊酯、苯甲酸2-二甲基胺基乙酯、4-二甲基胺基苯甲酸2-乙基己酯、N,N-二甲基對甲苯胺、4,4'-雙(二甲基胺基)二苯甲酮（通稱米其勒酮（Michler's ketone））、4,4'-雙(二乙基胺基)二苯甲酮、4,4'-雙(乙基甲基胺基)二苯甲酮等。As the amine compound, for example, triethanolamine, methyldiethanolamine, triisopropanolamine, methyl 4-dimethylaminobenzoate, ethyl 4-dimethylaminobenzoate, 4-dimethylaminobenzoate, Isoamyl aminobenzoate, 2-dimethylaminoethyl benzoate, 2-ethylhexyl 4-dimethylaminobenzoate, N,N-dimethyl-p-toluidine, 4, 4'-bis(dimethylamino)benzophenone (commonly known as Michler's ketone), 4,4'-bis(diethylamino)benzophenone, 4,4'- Bis(ethylmethylamino)benzophenone and the like.

作為烷氧基蒽化合物，例如可列舉：9,10-二甲氧基蒽、2-乙基-9,10-二甲氧基蒽、9,10-二乙氧基蒽、2-乙基-9,10-二乙氧基蒽、9,10-二丁氧基蒽、2-乙基-9,10-二丁氧基蒽等。Examples of alkoxyanthracene compounds include 9,10-dimethoxyanthracene, 2-ethyl-9,10-dimethoxyanthracene, 9,10-diethoxyanthracene, 2-ethyl -9,10-diethoxyanthracene, 9,10-dibutoxyanthracene, 2-ethyl-9,10-dibutoxyanthracene, etc.

作為硫雜蒽酮化合物，例如可列舉：2-異丙基硫雜蒽酮、4-異丙基硫雜蒽酮、2,4-二乙基硫雜蒽酮、2,4-二氯硫雜蒽酮、1-氯-4-丙氧基硫雜蒽酮等。Examples of thioxanthone compounds include: 2-isopropylthioxanthone, 4-isopropylthioxanthone, 2,4-diethylthioxanthone, 2,4-dichlorothioxanthone Xanthone, 1-chloro-4-propoxythioxanthone and the like.

作為羧酸化合物，例如可列舉：苯硫基乙酸、甲基苯硫基乙酸、乙基苯硫基乙酸、甲基乙基苯硫基乙酸、二甲基苯硫基乙酸、甲氧基苯硫基乙酸、二甲氧基苯硫基乙酸、氯苯硫基乙酸、二氯苯硫基乙酸、N-苯基甘胺酸、苯氧基乙酸、萘基硫基乙酸、N-萘基甘胺酸、萘氧基乙酸等。Examples of the carboxylic acid compound include: phenylthioacetic acid, methylphenylthioacetic acid, ethylphenylthioacetic acid, methylethylphenylthioacetic acid, dimethylphenylthioacetic acid, methoxyphenylthioacetic acid, Glycolic acid, dimethoxyphenylthioacetic acid, chlorophenylthioacetic acid, dichlorophenylthioacetic acid, N-phenylglycine, phenoxyacetic acid, naphthylthioacetic acid, N-naphthylglycine acid, naphthyloxyacetic acid, etc.

於組成物包含聚合起始助劑（F1）的情況下，相對於聚合性化合物（E）100質量份，組成物中的聚合起始助劑（F1）的含量較佳為0.1質量份以上且300質量份以下，更佳為0.1質量份以上且200質量份以下。另外，相對於樹脂（D）及聚合性化合物（E）的合計量100質量份，組成物中的聚合起始助劑（F1）的含量較佳為0.1質量份以上且30質量份以下，更佳為1質量份以上且20質量份以下。若聚合起始助劑（F1）的含量處於所述範圍內，則可實現組成物的進一步的高感度化。When the composition contains the polymerization initiation aid (F1), the content of the polymerization initiation aid (F1) in the composition is preferably 0.1 mass parts or more with respect to 100 mass parts of the polymerizable compound (E) and 300 mass parts or less, More preferably, it is 0.1 mass part or more and 200 mass parts or less. In addition, the content of the polymerization initiation aid (F1) in the composition is preferably not less than 0.1 parts by mass and not more than 30 parts by mass relative to 100 parts by mass of the total amount of the resin (D) and the polymerizable compound (E). Preferably, it is 1 mass part or more and 20 mass parts or less. When the content of the polymerization initiation aid (F1) is within the above range, further high sensitivity of the composition can be achieved.

[9]抗氧化劑（H） 組成物可進而包含抗氧化劑（H）。作為抗氧化劑（H），若為工業上通常所使用的抗氧化劑則並無特別限定，可使用酚系抗氧化劑、磷系抗氧化劑、磷/酚複合型抗氧化劑及硫系抗氧化劑等。組成物亦可包含兩種以上的抗氧化劑（H）。 [9] Antioxidant (H) The composition may further contain an antioxidant (H). The antioxidant (H) is not particularly limited as long as it is an antioxidant commonly used industrially, and phenolic antioxidants, phosphorus antioxidants, phosphorus/phenol composite antioxidants, sulfur antioxidants, and the like can be used. The composition may contain two or more antioxidants (H).

磷/酚複合型抗氧化劑例如為分子中分別具有一個以上的磷原子與酚結構的化合物。其中，就組成物的顯影性及組成物或膜的發光強度的觀點而言，抗氧化劑（H）較佳為包含磷/酚複合型抗氧化劑。The phosphorus/phenol composite antioxidant is, for example, a compound having one or more phosphorus atoms and a phenolic structure in the molecule. Among them, the antioxidant (H) preferably contains a phosphorus/phenol composite antioxidant from the viewpoint of the developability of the composition and the luminous intensity of the composition or the film.

作為酚系抗氧化劑，例如可列舉：易璐諾斯（註冊商標）1010（Irganox 1010：季戊四醇四[3-(3,5-二-第三丁基-4-羥基苯基)丙酸酯]、巴斯夫（BASF）（股）製造）、易璐諾斯1076（Irganox 1076：十八基-3-(3,5-二-第三丁基-4-羥基苯基)丙酸酯、巴斯夫（BASF）（股）製造）、易璐諾斯1330（Irganox 1330：3,3',3'',5,5',5''-六-第三丁基-a,a',a''-(均三甲苯-2,4,6-三基)三-對甲酚、巴斯夫（BASF）（股）製造）、易璐諾斯3114（Irganox 3114：1,3,5-三(3,5-二-第三丁基-4-羥基苄基)-1,3,5-三嗪-2,4,6(1H,3H,5H)-三酮、巴斯夫（BASF）（股）製造）、易璐諾斯3790（Irganox 3790：1,3,5-三((4-第三丁基-3-羥基-2,6-二甲苯基)甲基)-1,3,5-三嗪-2,4,6(1H,3H,5H)-三酮、巴斯夫（BASF）（股）製造）、易璐諾斯1035（Irganox 1035：硫代二伸乙基雙[3-(3,5-二-第三丁基-4-羥基苯基)丙酸酯]、巴斯夫（BASF）（股）製造）、易璐諾斯1135（Irganox 1135：苯丙酸的3,5-雙(1,1-二甲基乙基)-4-羥基-C7-C9側鏈烷基酯、巴斯夫（BASF）（股）製造）、易璐諾斯1520L（Irganox 1520L：4,6-雙(辛基硫基甲基)-鄰甲酚、巴斯夫（BASF）（股）製造）、易璐諾斯3125（Irganox 3125、巴斯夫（BASF）（股）製造）、易璐諾斯565（Irganox 565：2,4-雙(正辛基硫基)-6-(4-羥基-3',5'-二-第三丁基苯胺基)-1,3,5-三嗪、巴斯夫（BASF）（股）製造）、艾迪科斯塔波（註冊商標）AO-80（Adekastab AO-80：3,9-雙(2-(3-(3-第三丁基-4-羥基-5-甲基苯基)丙醯基氧基)-1,1-二甲基乙基)-2,4,8,10-四氧雜螺(5,5)十一烷、艾迪科（ADEKA）（股）製造）、蘇米萊澤（Sumilizer）（註冊商標）BHT、蘇米萊澤（Sumilizer）GA-80、蘇米萊澤（Sumilizer）GS（以上，住友化學（股）製造）、夏諾克斯（註冊商標）1790（Cyanox 1790、氰特（Cytec）（股）製造）、維他命（Vitamin）E（衛材（Eisai）（股）製造）等。Examples of phenolic antioxidants include: Irganox (registered trademark) 1010 (Irganox 1010: pentaerythritol tetrakis [3-(3,5-di-tert-butyl-4-hydroxyphenyl) propionate] , BASF (BASF) (stock) manufacturing), Irganox 1076 (Irganox 1076: octadecyl-3-(3,5-di-tert-butyl-4-hydroxyphenyl) propionate, BASF ( BASF) (stock) manufacturing), Irganox 1330 (Irganox 1330: 3,3',3'',5,5',5''-hexa-tertiary butyl-a,a',a'' -(Mesitylene-2,4,6-triyl)tri-p-cresol, manufactured by BASF (Stock)), Irganox 3114 (Irganox 3114: 1,3,5-tris(3, 5-di-tert-butyl-4-hydroxybenzyl)-1,3,5-triazine-2,4,6(1H,3H,5H)-trione, manufactured by BASF Co., Ltd.) , Irganox 3790 (Irganox 3790: 1,3,5-tris((4-tert-butyl-3-hydroxy-2,6-xylyl)methyl)-1,3,5-triazine -2,4,6(1H,3H,5H)-trione, manufactured by BASF (BASF), Irganox 1035 (Irganox 1035: thiobisethylenebis[3-(3,5 -di-tert-butyl-4-hydroxyphenyl)propionate], manufactured by BASF (BASF), Irganox 1135 (Irganox 1135: 3,5-bis(1, 1-Dimethylethyl)-4-hydroxy-C7-C9 side chain alkyl ester, manufactured by BASF (Stock)), Irganox 1520L (Irganox 1520L: 4,6-bis(octylthio methyl)-o-cresol, BASF (BASF) (Stock) manufacturing), Irganox 3125 (Irganox 3125, BASF (BASF) (Stock) manufacturing), Irganox 565 (Irganox 565: 2,4 -Bis(n-octylthio)-6-(4-hydroxy-3',5'-di-tert-butylanilino)-1,3,5-triazine, manufactured by BASF Co., Ltd. ), Adekastab (registered trademark) AO-80 (Adekastab AO-80: 3,9-bis(2-(3-(3-tert-butyl-4-hydroxy-5-methylphenyl) Propyloxy)-1,1-dimethylethyl)-2,4,8,10-tetraoxaspiro(5,5)undecane, manufactured by ADEKA Co., Ltd.) , Sumilizer (registered trademark) BHT, Sumilizer GA-80, Sumilizer GS (above, manufactured by Sumitomo Chemical Co., Ltd.), Shanox (registered Trademark) 1790 (Cyanox 1790, manufactured by Cytec Co., Ltd.), Vitamin E (manufactured by Eisai Co., Ltd.), etc.

作為磷系抗氧化劑，例如可列舉：易璐佛斯（註冊商標）168（Irgafos 168：三(2,4-二-第三丁基苯基)亞磷酸酯、巴斯夫（BASF）（股）製造）、易璐佛斯12（Irgafos 12：三[2-[[2,4,8,10-四-第三丁基二苯並[d,f][1,3,2]二氧雜膦-6-基]氧基]乙基]胺、巴斯夫（BASF）（股）製造）、易璐佛斯38（Irgafos 38：亞磷酸雙(2,4-雙(1,1-二甲基乙基)-6-甲基苯基)乙基酯、巴斯夫（BASF）（股）製造）、艾迪科斯塔波（Adekastab）（註冊商標）329K、艾迪科斯塔波（Adekastab）PEP36、艾迪科斯塔波（Adekastab）PEP-8（以上，艾迪科（ADEKA）（股）製造）、桑得斯塔波（Sandstab）P-EPQ（科萊恩（Clariant）公司製造）、韋斯頓（Weston）（註冊商標）618、韋斯頓（Weston）619G（以上，GE公司製造）、烏特拉諾克斯（Ultranox）626（GE公司製造）等。Examples of phosphorus-based antioxidants include: Irgafos (registered trademark) 168 (Irgafos 168: tris(2,4-di-tert-butylphenyl) phosphite, manufactured by BASF Co., Ltd. ), Irgafos 12 (Irgafos 12: Tris[2-[[2,4,8,10-tetra-tert-butyldibenzo[d,f][1,3,2]dioxaphosphine -6-yl]oxy]ethyl]amine, BASF (BASF) Co., Ltd. manufacture), Irgafos 38 (Irgafos 38: bis(2,4-bis(1,1-dimethylethyl)phosphite base)-6-methylphenyl)ethyl ester, BASF (BASF) Co., Ltd.), Adekastab (registered trademark) 329K, Adekastab PEP36, Adekastab Adekastab PEP-8 (above, manufactured by ADEKA), Sandstab P-EPQ (manufactured by Clariant), Weston ) (registered trademark) 618, Weston (Weston) 619G (above, manufactured by GE), Ultranox (Ultranox) 626 (manufactured by GE), etc.

作為磷/酚複合型抗氧化劑，例如可列舉蘇米萊澤（Sumilizer）（註冊商標）GP（6-[3-(3-第三丁基-4-羥基-5-甲基苯基)丙氧基]-2,4,8,10-四-第三丁基二苯並[d,f][1.3.2]二氧雜磷環庚烷）（住友化學（股）製造）等。Examples of phosphorus/phenol composite antioxidants include Sumilizer (registered trademark) GP (6-[3-(3-tert-butyl-4-hydroxy-5-methylphenyl) propane oxy]-2,4,8,10-tetra-tert-butyldibenzo[d,f][1.3.2]dioxaphosphoheptane) (manufactured by Sumitomo Chemical Co., Ltd.) and the like.

作為硫系抗氧化劑，例如可列舉：硫代二丙酸二月桂基酯、硫代二丙酸二肉豆蔻基酯或硫代二丙酸二硬脂基酯等硫代二丙酸二烷基酯化合物及四[亞甲基(3-十二基硫基)丙酸酯]甲烷等多元醇的β-烷基巰基丙酸酯化合物等。Examples of sulfur-based antioxidants include dialkyl thiodipropionates such as dilauryl thiodipropionate, dimyristyl thiodipropionate, and distearyl thiodipropionate. β-alkylmercaptopropionate compounds of polyhydric alcohols such as ester compounds and tetrakis[methylene(3-dodecylthio)propionate]methane, etc.

相對於樹脂（D）100質量份，組成物中的抗氧化劑（H）的含量例如為1質量份以上且50質量份以下，就膜的發光量及耐熱性的觀點而言，較佳為5質量份以上且40質量份以下，更佳為7質量份以上且30質量份以下。The content of the antioxidant (H) in the composition is, for example, not less than 1 part by mass and not more than 50 parts by mass with respect to 100 parts by mass of the resin (D), and preferably 5 parts by mass from the viewpoint of the light emission and heat resistance of the film. It is not less than 40 parts by mass, more preferably not less than 7 parts by mass and not more than 30 parts by mass.

[10]調平劑（I） 組成物可進而包含調平劑（I）。作為調平劑（I），可列舉：矽酮系界面活性劑、氟系界面活性劑及具有氟原子的矽酮系界面活性劑等。該些亦可於側鏈上具有聚合性基。就組成物的顯影性及組成物或膜的發光強度的觀點而言，調平劑（I）較佳為氟系界面活性劑。組成物亦可包含兩種以上的調平劑（I）。 [10] Leveling agent (I) The composition may further contain a leveling agent (I). Examples of the leveling agent (I) include silicone-based surfactants, fluorine-based surfactants, silicone-based surfactants having a fluorine atom, and the like. These may have a polymeric group on a side chain. The leveling agent (I) is preferably a fluorine-based surfactant from the viewpoint of the developability of the composition and the luminous intensity of the composition or the film. The composition may also contain two or more leveling agents (I).

作為矽酮系界面活性劑，可列舉分子內具有矽氧烷鍵的界面活性劑等。具體而言，可列舉：東麗矽酮（Toray silicone）DC3PA、東麗矽酮（Toray silicone）SH7PA、東麗矽酮（Toray silicone）DC11PA、東麗矽酮（Toray silicone）SH21PA、東麗矽酮（Toray silicone）SH28PA、東麗矽酮（Toray silicone）SH29PA、東麗矽酮（Toray silicone）SH30PA、東麗矽酮（Toray silicone）SH8400（商品名；東麗道康寧（Toray Dow Corning）（股）製造），KP321、KP322、KP323、KP324、KP326、KP340、KP341（信越化學工業（股）製造），TSF400、TSF401、TSF410、TSF4300、TSF4440、TSF4445、TSF4446、TSF4452及TSF4460（日本邁圖高新材料（Momentive Performance Materials Japan）有限責任公司製造）等。Examples of the silicone-based surfactant include those having a siloxane bond in the molecule, and the like. Specifically, Toray silicone DC3PA, Toray silicone SH7PA, Toray silicone DC11PA, Toray silicone SH21PA, Toray silicone Toray silicone SH28PA, Toray silicone SH29PA, Toray silicone SH30PA, Toray silicone SH8400 (trade name; Toray Dow Corning (shares) ) manufacturing), KP321, KP322, KP323, KP324, KP326, KP340, KP341 (Shin-Etsu Chemical Industry Co., Ltd. material (Momentive Performance Materials Japan) Co., Ltd.) etc.

作為氟系界面活性劑，可列舉分子內具有氟碳鏈的界面活性劑等。具體可列舉：弗拉德（Fluorad）（註冊商標）FC430、弗拉德（Fluorad）FC431（住友3M（股）製造），美佳法（Megafac）（註冊商標）F142D、美佳法（Megafac）F171、美佳法（Megafac）F172、美佳法（Megafac）F173、美佳法（Megafac）F177、美佳法（Megafac）F183、美佳法（Megafac）F554、美佳法（Megafac）F575、美佳法（Megafac）R30、美佳法（Megafac）RS-718-K（迪愛生（DIC）（股）製造），艾福拓（Eftop）（註冊商標）EF301、艾福拓（Eftop）EF303、艾福拓（Eftop）EF351、艾福拓（Eftop）EF352（三菱材料電子化成（股）製造），沙福隆（Surflon）（註冊商標）S381、沙福隆（Surflon）S382、沙福隆（Surflon）SC101、沙福隆（Surflon）SC105（旭硝子（股）製造）及E5844（大金精細化學（Daikin Fine Chemical）研究所（股）製造）等。Examples of the fluorine-based surfactant include those having a fluorocarbon chain in the molecule, and the like. Specific examples include: Fluorad (registered trademark) FC430, Fluorad (Fluorad) FC431 (manufactured by Sumitomo 3M Co., Ltd.), Megafac (registered trademark) F142D, Megafac (Megafac) F171, Megafac F172, Megafac F173, Megafac F177, Megafac F183, Megafac F554, Megafac F575, Megafac R30, Megafac Megafac RS-718-K (manufactured by DIC), Eftop (registered trademark) EF301, Eftop EF303, Eftop EF351, Eftop Eftop (Eftop) EF352 (manufactured by Mitsubishi Materials Corporation), Surflon (registered trademark) S381, Surflon S382, Surflon SC101, Surflon (Surflon) ) SC105 (manufactured by Asahi Glass Co., Ltd.) and E5844 (manufactured by Daikin Fine Chemical Research Institute Co., Ltd.), etc.

作為具有氟原子的矽酮系界面活性劑，可列舉分子內具有矽氧烷鍵及氟碳鏈的界面活性劑等。具體而言，可列舉美佳法（Megafac）（註冊商標）R08、美佳法（Megafac）BL20、美佳法（Megafac）F475、美佳法（Megafac）F477及美佳法（Megafac）F443（迪愛生（DIC）（股）製造）等。Examples of the silicone-based surfactant having a fluorine atom include a surfactant having a siloxane bond and a fluorocarbon chain in the molecule, and the like. Specifically, Megafac (registered trademark) R08, Megafac BL20, Megafac F475, Megafac F477 and Megafac F443 (DIC) (Share) manufacturing), etc.

於組成物包含調平劑（I）的情況下，相對於組成物的總量，組成物中的調平劑（I）的含有率例如為0.001質量%以上且1.0質量%以下，較佳為0.005質量%以上且0.75質量%以下，更佳為0.01質量%以上且0.5質量%以下，進而佳為0.05質量%以上且0.5質量%以下。若調平劑（I）的含有率處於所述範圍內，則可使膜的平坦性更良好。When the composition contains the leveling agent (I), the content of the leveling agent (I) in the composition is, for example, not less than 0.001% by mass and not more than 1.0% by mass relative to the total amount of the composition, preferably 0.005% by mass to 0.75% by mass, more preferably 0.01% by mass to 0.5% by mass, still more preferably 0.05% by mass to 0.5% by mass. When the content rate of a leveling agent (I) exists in the said range, the flatness of a film can be made more favorable.

[11]溶劑（J） 組成物可包含一種或兩種以上的溶劑（J）。溶劑（J）較佳為溶解樹脂（D）、聚合性化合物（E）及聚合起始劑（F）的溶劑。作為溶劑（J），例如可列舉：酯溶劑（分子內包含-COO-而不含-O-的溶劑）、醚溶劑（分子內包含-O-而不含-COO-的溶劑）、醚酯溶劑（分子內包含-COO-與-O-的溶劑）、酮溶劑（分子內包含-CO-而不含-COO-的溶劑）、醇溶劑（分子內包含OH而不含-O-、-CO-及COO-的溶劑）、芳香族烴溶劑、醯胺溶劑、二甲基亞碸等。 [11] Solvent (J) The composition may contain one kind or two or more kinds of solvents (J). The solvent (J) is preferably a solvent that dissolves the resin (D), the polymerizable compound (E) and the polymerization initiator (F). Examples of the solvent (J) include: ester solvents (solvents containing -COO- in the molecule but not -O-), ether solvents (solvents containing -O- in the molecule but not -COO-), ether esters Solvents (solvents containing -COO- and -O- in the molecule), ketone solvents (solvents containing -CO- in the molecule without -COO-), alcohol solvents (containing OH in the molecule without -O-, - CO- and COO- solvents), aromatic hydrocarbon solvents, amide solvents, dimethyl sulfide, etc.

作為酯溶劑，可列舉：乳酸甲酯、乳酸乙酯、乳酸正丁酯、2-羥基異丁酸甲酯、乙酸乙酯、乙酸正丁酯、乙酸異丁酯、甲酸正戊酯、乙酸異戊酯、丙酸正丁酯、丁酸異丙酯、丁酸乙酯、丁酸正丁酯、丙酮酸甲酯、丙酮酸乙酯、丙酮酸丙酯、乙醯乙酸甲酯、乙醯乙酸乙酯、環己醇乙酸酯及γ-丁內酯等。Examples of the ester solvent include: methyl lactate, ethyl lactate, n-butyl lactate, methyl 2-hydroxyisobutyrate, ethyl acetate, n-butyl acetate, isobutyl acetate, n-pentyl formate, iso-acetic acid Amyl ester, n-butyl propionate, isopropyl butyrate, ethyl butyrate, n-butyl butyrate, methyl pyruvate, ethyl pyruvate, propyl pyruvate, methyl acetoacetate, acetoacetate Ethyl ester, cyclohexanol acetate and γ-butyrolactone, etc.

作為醚溶劑，可列舉：乙二醇單甲醚、乙二醇單乙醚、乙二醇單丙醚、乙二醇單丁醚、二乙二醇單甲醚、二乙二醇單乙醚、二乙二醇單丁醚、丙二醇單甲醚、丙二醇單乙醚、丙二醇單丙醚、丙二醇單丁醚、3-甲氧基-1-丁醇、3-甲氧基-3-甲基丁醇、四氫呋喃、四氫吡喃、1,4-二噁烷、二乙二醇二甲醚、二乙二醇二乙醚、二乙二醇甲基乙醚、二乙二醇二丙醚、二乙二醇二丁醚、苯甲醚、苯乙醚及甲基苯甲醚等。Examples of ether solvents include ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monopropyl ether, ethylene glycol monobutyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, Ethylene glycol monobutyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monopropyl ether, propylene glycol monobutyl ether, 3-methoxy-1-butanol, 3-methoxy-3-methylbutanol, Tetrahydrofuran, tetrahydropyran, 1,4-dioxane, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol methyl ether, diethylene glycol dipropyl ether, diethylene glycol Dibutyl ether, anisole, phenetole and methyl anisole, etc.

作為醚酯溶劑，可列舉：甲氧基乙酸甲酯、甲氧基乙酸乙酯、甲氧基乙酸丁酯、乙氧基乙酸甲酯、乙氧基乙酸乙酯、3-甲氧基丙酸甲酯、3-甲氧基丙酸乙酯、3-乙氧基丙酸甲酯、3-乙氧基丙酸乙酯、2-甲氧基丙酸甲酯、2-甲氧基丙酸乙酯、2-甲氧基丙酸丙酯、2-乙氧基丙酸甲酯、2-乙氧基丙酸乙酯、2-甲氧基-2-甲基丙酸甲酯、2-乙氧基-2-甲基丙酸乙酯、乙酸3-甲氧基丁酯、乙酸3-甲基-3-甲氧基丁酯、丙二醇單甲醚乙酸酯、丙二醇單乙醚乙酸酯、丙二醇單丙醚乙酸酯、乙二醇單甲醚乙酸酯、乙二醇單乙醚乙酸酯、二乙二醇單乙醚乙酸酯及二乙二醇單丁醚乙酸酯等。Examples of ether ester solvents include: methyl methoxyacetate, ethyl methoxyacetate, butyl methoxyacetate, methyl ethoxyacetate, ethyl ethoxyacetate, and 3-methoxypropionic acid Methyl ester, ethyl 3-methoxypropionate, methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate, methyl 2-methoxypropionate, 2-methoxypropionate Ethyl ester, Propyl 2-methoxypropionate, Methyl 2-ethoxypropionate, Ethyl 2-ethoxypropionate, Methyl 2-methoxy-2-methylpropionate, 2- Ethoxy-2-methylpropionate, 3-methoxybutyl acetate, 3-methyl-3-methoxybutyl acetate, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate , Propylene glycol monopropyl ether acetate, ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, diethylene glycol monoethyl ether acetate and diethylene glycol monobutyl ether acetate, etc.

作為酮溶劑，可列舉：4-羥基-4-甲基-2-戊酮、丙酮、2-丁酮、2-庚酮、3-庚酮、4-庚酮、4-甲基-2-戊酮、環戊酮、環己酮及異佛爾酮等。Examples of ketone solvents include: 4-hydroxy-4-methyl-2-pentanone, acetone, 2-butanone, 2-heptanone, 3-heptanone, 4-heptanone, 4-methyl-2- Pentanone, cyclopentanone, cyclohexanone and isophorone, etc.

作為醇溶劑，可列舉：甲醇、乙醇、丙醇、丁醇、己醇、環己醇、乙二醇、丙二醇及甘油等。Examples of the alcohol solvent include methanol, ethanol, propanol, butanol, hexanol, cyclohexanol, ethylene glycol, propylene glycol, and glycerin.

作為芳香族烴溶劑，可列舉：苯、甲苯、二甲苯及均三甲苯等。Examples of the aromatic hydrocarbon solvent include benzene, toluene, xylene, and mesitylene.

作為醯胺溶劑，可列舉：N,N-二甲基甲醯胺、N,N-二甲基乙醯胺及N-甲基吡咯啶酮等。Examples of the amide solvent include N,N-dimethylformamide, N,N-dimethylacetamide, N-methylpyrrolidone, and the like.

作為溶劑（J），較佳為包含選自由丙二醇單甲醚乙酸酯、乳酸乙酯、丙二醇單甲醚、3-乙氧基丙酸乙酯、乙二醇單甲醚、二乙二醇單甲醚、二乙二醇單乙醚、4-羥基-4-甲基-2-戊酮、及芳香族烴溶劑所組成的群組中的一種或兩種以上。As the solvent (J), it is preferable to contain propylene glycol monomethyl ether acetate, ethyl lactate, propylene glycol monomethyl ether, 3-ethoxy ethyl propionate, ethylene glycol monomethyl ether, diethylene glycol One or more of the group consisting of monomethyl ether, diethylene glycol monoethyl ether, 4-hydroxy-4-methyl-2-pentanone, and aromatic hydrocarbon solvents.

於一個較佳的實施形態中，溶劑（J）包含選自由丙二醇單甲醚乙酸酯、乳酸乙酯、丙二醇單甲醚、3-乙氧基丙酸乙酯、乙二醇單甲醚、二乙二醇單甲醚、二乙二醇單乙醚、及4-羥基-4-甲基-2-戊酮所組成的群組中的一種或兩種以上、與芳香族烴溶劑。In a preferred embodiment, the solvent (J) contains propylene glycol monomethyl ether acetate, ethyl lactate, propylene glycol monomethyl ether, 3-ethoxy ethyl propionate, ethylene glycol monomethyl ether, One or two or more of the group consisting of diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, and 4-hydroxy-4-methyl-2-pentanone, and an aromatic hydrocarbon solvent.

於其他較佳的實施形態中，溶劑（J）包含丙二醇單甲醚乙酸酯、與芳香族烴溶劑。該芳香族烴溶劑較佳為甲苯、二甲苯等沸點為100℃以上且150℃以下的溶劑。藉由併用芳香族烴溶劑，可提高發光性有機化合物（B）的溶解性。In other preferred embodiments, the solvent (J) includes propylene glycol monomethyl ether acetate and an aromatic hydrocarbon solvent. The aromatic hydrocarbon solvent is preferably a solvent having a boiling point of not less than 100°C and not more than 150°C, such as toluene and xylene. The solubility of the light emitting organic compound (B) can be improved by using an aromatic hydrocarbon solvent together.

溶劑（J）為固體成分以外的成分，例如半導體粒子（A）的分散液或樹脂（D）的溶液等中所含的溶劑亦包含於溶劑（J）中。 組成物中的溶劑（J）的含有率為該組成物中所含的所有溶劑的合計質量相對於該組成物的總量的比例，相對於組成物的總量，較佳為40質量%以上且95質量%以下，更佳為55質量%以上且90質量%以下，進而佳為70質量%以上且80質量%以下。換言之，組成物的固體成分較佳為5質量%以上且60質量%以下，更佳為10質量%以上且45質量%以下，進而佳為20質量%以上且40質量%以下。若溶劑（J）的含有率處於所述範圍內，則存在塗佈時的組成物層的平坦性變得更良好，且容易形成適當的厚度的膜的傾向。另外，將組成物的固體成分設定得低（例如40質量%以下）於確保發光性有機化合物（B）的完全溶解或提高溶解量的方面有利。 The solvent (J) is a component other than the solid content, and for example, a solvent contained in a dispersion liquid of the semiconductor particle (A) or a solution of the resin (D) is also contained in the solvent (J). The content rate of the solvent (J) in the composition is a ratio of the total mass of all solvents contained in the composition to the total amount of the composition, preferably 40% by mass or more with respect to the total amount of the composition And 95 mass % or less, More preferably, it is 55 mass % or more and 90 mass % or less, More preferably, it is 70 mass % or more and 80 mass % or less. In other words, the solid content of the composition is preferably not less than 5% by mass and not more than 60% by mass, more preferably not less than 10% by mass and not more than 45% by mass, still more preferably not less than 20% by mass and not more than 40% by mass. When the content of the solvent (J) is within the above range, the flatness of the composition layer at the time of application tends to be better, and it tends to be easy to form a film with an appropriate thickness. In addition, setting the solid content of the composition to be low (for example, 40% by mass or less) is advantageous in terms of ensuring complete dissolution of the light-emitting organic compound (B) or increasing the dissolved amount.

[12]其他成分 組成物視需要亦可進而包含聚合抑制劑、填充劑、其他高分子化合物、密接促進劑、光穩定劑、鏈轉移劑等本技術領域中公知的添加劑。 [12] Other ingredients The composition may further contain additives known in the art, such as polymerization inhibitors, fillers, other polymer compounds, adhesion promoters, photostabilizers, and chain transfer agents, if necessary.

＜組成物的製造方法＞ 組成物可藉由包括將規定的成分、以及視需要使用的其他成分混合的步驟的方法來製造。組成物的製造方法可進而包括製備發光性有機化合物（B）的步驟、製備樹脂（D）的步驟等。 ＜Manufacturing method of the composition＞ The composition can be produced by a method including a step of mixing predetermined components and other components used as needed. The method for producing the composition may further include a step of preparing a light-emitting organic compound (B), a step of preparing a resin (D), and the like.

＜膜及其製造方法＞ 本發明的膜（以下，亦簡稱為「膜」）為由所述本發明的組成物形成的膜。膜例如可藉由包括將組成物塗佈於基板上後使其乾燥的步驟的方法而獲得。其中，膜並不限定於此，亦可包含溶劑（J）。 ＜Film and its manufacturing method＞ The film of the present invention (hereinafter also simply referred to as "film") is a film formed from the composition of the present invention. The film can be obtained, for example, by a method including a step of applying the composition on a substrate and drying it. However, the film is not limited thereto, and may contain a solvent (J).

於一實施形態中，本發明的組成物為進而包含樹脂（D）的樹脂組成物R1。由樹脂組成物R1形成的樹脂膜可藉由將該組成物塗佈於基板上後使其乾燥而形成。 另外，於其他實施形態中，本發明的組成物為進而包含選自聚合性化合物（E）及熱聚合性化合物中的一種以上的聚合性化合物、與選自聚合起始劑（F）及熱聚合起始劑中的一種以上的聚合起始劑的硬化性組成物R2。硬化性組成物R2亦可進而包含樹脂（D）。由硬化性組成物R2形成的本發明的膜為硬化膜。硬化膜可藉由將硬化性組成物R2塗佈於基板上後使其乾燥並利用光的作用及/或熱的作用使其硬化而獲得。 硬化性組成物R2的一態樣為進而包含聚合性化合物（E）及聚合起始劑（F）的光硬化性組成物R3。光硬化性組成物R3亦可進而包含樹脂（D）。 In one embodiment, the composition of the present invention is resin composition R1 further including resin (D). The resin film formed from the resin composition R1 can be formed by applying the composition on a substrate and drying it. In addition, in another embodiment, the composition of the present invention further includes one or more polymerizable compounds selected from polymerizable compounds (E) and heat-polymerizable compounds, and polymerizable compounds selected from polymerization initiators (F) and heat-polymerizable compounds. Curable composition R2 of one or more polymerization initiators among polymerization initiators. Curable composition R2 may further contain resin (D). The film of the present invention formed of curable composition R2 is a cured film. The cured film can be obtained by applying the curable composition R2 on the substrate, drying it, and curing it by the action of light and/or heat. One aspect of curable composition R2 is photocurable composition R3 further including a polymerizable compound (E) and a polymerization initiator (F). Photocurable composition R3 may further contain resin (D).

膜可形成於所述基板整個面上，亦可按照圖案狀形成於所述基板的一部分上。作為將膜形成為圖案狀的方法，可列舉：光微影法、噴墨法、印刷法等。作為印刷法，可列舉：模版印刷法、網版印刷法、利用敷料器的印刷塗敷等。The film may be formed on the entire surface of the substrate, or may be formed in a pattern on a part of the substrate. As a method of forming a film into a pattern shape, a photolithography method, an inkjet method, a printing method, etc. are mentioned. As a printing method, a stencil printing method, a screen printing method, printing application by an applicator, etc. are mentioned.

作為基板，可列舉：石英玻璃、硼矽酸玻璃、氧化鋁矽酸鹽玻璃、對表面進行了二氧化矽塗佈的鈉鈣玻璃等玻璃板；或聚碳酸酯、聚甲基丙烯酸甲酯、聚對苯二甲酸乙二酯等樹脂板；矽；於所述基板上形成有鋁、銀、銀/銅/鈀合金薄膜等者等。Examples of the substrate include glass plates such as quartz glass, borosilicate glass, alumina silicate glass, and soda-lime glass whose surface is coated with silica; or polycarbonate, polymethylmethacrylate, Resin boards such as polyethylene terephthalate; silicon; aluminum, silver, silver/copper/palladium alloy films, etc., formed on the substrate.

由樹脂組成物R1形成的圖案狀的樹脂膜可以如下方式來製作。首先，介隔遮罩將樹脂組成物R1塗佈於基板上，形成圖案狀的組成物層。作為樹脂組成物的塗佈方法，可列舉：旋塗法、狹縫塗佈法、狹縫和旋塗法等。The patterned resin film formed from the resin composition R1 can be produced as follows. First, the resin composition R1 is coated on the substrate through a mask to form a patterned composition layer. Examples of the coating method of the resin composition include a spin coating method, a slit coating method, a slit and spin coating method, and the like.

接著，藉由使組成物層乾燥（去除溶劑等揮發成分）而獲得樹脂膜。作為乾燥方法，可列舉加熱乾燥、減壓乾燥或該些的組合。進行加熱乾燥時的溫度較佳為30℃以上且250℃以下，更佳為50℃以上且235℃以下。加熱時間較佳為10秒以上且180分鐘以下，更佳為30秒以上且90分鐘以下。於進行減壓乾燥的情況下，較佳為於50 Pa以上且150 Pa以下的壓力下進行。關於組成物層的乾燥，例如可實施乾燥溫度不同的多個乾燥步驟等以多段來實施。Next, a resin film is obtained by drying the composition layer (removing volatile components such as solvent). As a drying method, heating drying, drying under reduced pressure, or the combination of these can be mentioned. The temperature at the time of heating and drying is preferably from 30°C to 250°C, more preferably from 50°C to 235°C. The heating time is preferably from 10 seconds to 180 minutes, more preferably from 30 seconds to 90 minutes. When performing reduced-pressure drying, it is preferable to carry out under the pressure of 50 Pa or more and 150 Pa or less. The drying of the composition layer may be carried out in multiple stages, for example, by implementing a plurality of drying steps with different drying temperatures.

關於由光硬化性組成物R3形成的圖案狀的硬化膜，若列舉使用光微影法的方法為例，則例如可以如下方式來製作。首先，將光硬化性組成物R3塗佈於基板上，藉由進行加熱乾燥（預烘烤）及/或減壓乾燥來去除溶劑等揮發成分，從而獲得組成物層。作為塗佈方法，可列舉與所述相同的方法。Regarding the patterned cured film formed from the photocurable composition R3, if a method using photolithography is given as an example, it can be produced as follows, for example. First, the photocurable composition R3 is coated on a substrate, and volatile components such as solvents are removed by heat-drying (pre-baking) and/or reduced-pressure drying to obtain a composition layer. As a coating method, the same method as mentioned above is mentioned.

進行加熱乾燥時的溫度較佳為30℃以上且120℃以下，更佳為50℃以上且110℃以下。加熱時間較佳為10秒以上且60分鐘以下，更佳為30秒以上且30分鐘以下。於進行減壓乾燥的情況下，較佳為於50 Pa以上且150 Pa以下的壓力下、以20℃以上且25℃以下的溫度範圍來進行。The temperature at the time of heating and drying is preferably from 30°C to 120°C, more preferably from 50°C to 110°C. The heating time is preferably from 10 seconds to 60 minutes, more preferably from 30 seconds to 30 minutes. When performing reduced-pressure drying, it is preferable to carry out at the temperature range of 20 degreeC or more and 25 degreeC or less under the pressure of 50 Pa or more and 150 Pa or less.

接著，對組成物層介隔用於形成目標圖案形狀的光罩來進行曝光。作為曝光中所使用的光源，較佳為產生250 nm以上且450 nm以下的波長的光的光源。例如，亦可根據聚合起始劑（F）的吸收波長，利用帶通濾波器自該波長的光中選擇性地取出436 nm附近、408 nm附近、或365 nm附近的光。作為光源，具體可列舉水銀燈、發光二極體、金屬鹵化物燈、鹵素燈等。Next, the composition layer is exposed through a photomask for forming a target pattern shape. As a light source used for exposure, the light source which emits the light of the wavelength of 250 nm or more and 450 nm or less is preferable. For example, depending on the absorption wavelength of the polymerization initiator (F), light near 436 nm, near 408 nm, or near 365 nm may be selectively extracted from light of the wavelength by using a bandpass filter. Specific examples of the light source include mercury lamps, light emitting diodes, metal halide lamps, and halogen lamps.

為了可對曝光面整體均勻地照射平行光線、或者進行光罩與形成有組成物層的基板的準確的對位，較佳為使用遮罩對準器及步進機等曝光裝置。曝光後的組成物層藉由該組成物層中所含的聚合性化合物（E）等進行聚合而硬化。In order to uniformly irradiate the entire exposure surface with parallel light rays or to accurately align the mask and the substrate on which the composition layer is formed, it is preferable to use an exposure device such as a mask aligner or a stepper. The exposed composition layer is cured by polymerization of the polymerizable compound (E) and the like contained in the composition layer.

使曝光後的組成物層接觸顯影液來進行顯影，藉此組成物層的未曝光部溶解於顯影液中而被去除，從而可獲得圖案狀的硬化膜。作為顯影液，例如可列舉氫氧化鉀、碳酸氫鈉、碳酸鈉、氫氧化四甲基銨等鹼性化合物的水溶液或有機溶劑。鹼性化合物於水溶液中的濃度較佳為0.01質量%以上且10質量%以下，更佳為0.03質量%以上且5質量%以下。作為有機溶劑，可列舉與所述溶劑（J）相同者。顯影液亦可包含界面活性劑。 顯影方法可為覆液法、浸漬法及噴霧法等的任一種。進而，顯影時，可使基板以任意角度傾斜。 When the exposed composition layer is brought into contact with a developing solution and developed, the unexposed portion of the composition layer is dissolved in the developing solution and removed, whereby a patterned cured film can be obtained. As a developing solution, the aqueous solution of basic compounds, such as potassium hydroxide, sodium bicarbonate, sodium carbonate, tetramethylammonium hydroxide, or an organic solvent, is mentioned, for example. The concentration of the basic compound in the aqueous solution is preferably not less than 0.01% by mass and not more than 10% by mass, more preferably not less than 0.03% by mass and not more than 5% by mass. As an organic solvent, the thing similar to the said solvent (J) is mentioned. The developer solution may also contain a surfactant. The developing method may be any one of a liquid covering method, a dipping method, a spraying method, and the like. Furthermore, during image development, the substrate can be inclined at any angle.

較佳為對藉由顯影而獲得的圖案狀的膜進一步進行加熱（後烘烤）。加熱溫度較佳為150℃以上且250℃以下，更佳為160℃以上且235℃以下。加熱時間較佳為1分鐘以上且120分鐘以下，更佳為10分鐘以上且60分鐘以下。藉由在顯影後進行加熱，可進行膜中所含的未反應的聚合性化合物（E）等的聚合，因此可獲得耐化學品性更優異的硬化膜。即便於不進行顯影的情況下，亦較佳為對曝光後的組成物層進一步進行加熱（後烘烤）。It is preferable to further heat (post bake) the patterned film obtained by image development. The heating temperature is preferably from 150°C to 250°C, more preferably from 160°C to 235°C. The heating time is preferably from 1 minute to 120 minutes, more preferably from 10 minutes to 60 minutes. By heating after image development, the polymerization of the unreacted polymerizable compound (E) etc. contained in a film can progress, and therefore the cured film more excellent in chemical resistance can be obtained. Even when development is not performed, it is preferable to further heat the exposed composition layer (post-baking).

另一方面，作為於基板整個面上形成硬化膜的方法，可列舉如下方法：將硬化性組成物塗佈於基板上，視需要使其乾燥而形成組成物層，對該組成物層進行加熱及/或於該組成物層整個面上進行曝光。On the other hand, as a method of forming a cured film on the entire surface of the substrate, a method of applying a curable composition on the substrate, drying it if necessary to form a composition layer, and heating the composition layer And/or perform exposure on the entire surface of the composition layer.

由硬化性組成物R2形成的硬化膜包含硬化性組成物R2中所含的聚合性化合物及聚合起始劑的硬化反應產物。該硬化反應產物為包含緣於聚合性化合物、聚合起始劑的結構的結構的物質。緣於聚合性化合物、聚合起始劑的結構的結構例如為聚合性化合物、聚合起始劑的硬化反應部位以外的骨架結構或其一部分。The cured film formed from the curable composition R2 contains a cured reaction product of the polymerizable compound contained in the curable composition R2 and the polymerization initiator. The hardened reaction product is a substance having a structure derived from the structure of the polymerizable compound and the polymerization initiator. The structure attributable to the structure of the polymerizable compound or the polymerization initiator is, for example, the skeleton structure or a part thereof other than the hardening reaction site of the polymerizable compound or the polymerization initiator.

本發明的膜的厚度並無特別限定，只要根據目的來適宜選擇即可，例如為1 μm以上且20 μm以下，較佳為1.5 μm以上且18 μm以下，更佳為2 μm以上且14 μm以下，進而佳為2 μm以上且12 μm以下。若膜的厚度過小，則膜的厚度方向上的發光性有機化合物（B）及光散射劑（C）（於包含的情況下）的總量變少，因此於對膜照射激發光時，激發光未由膜充分吸收、散射而存在透過膜的比例變大的傾向。 圖案狀的膜的形狀及尺寸並無特別限制。圖案狀的膜例如其俯視形狀為方形形狀。 The thickness of the film of the present invention is not particularly limited, as long as it is appropriately selected according to the purpose, for example, it is not less than 1 μm and not more than 20 μm, preferably not less than 1.5 μm and not more than 18 μm, more preferably not less than 2 μm and 14 μm or less, and more preferably not less than 2 μm and not more than 12 μm. If the thickness of the film is too small, the total amount of the light-emitting organic compound (B) and the light-scattering agent (C) (when contained) in the thickness direction of the film will decrease, so when the film is irradiated with excitation light, the excited Light is not sufficiently absorbed or scattered by the film, and the ratio of light transmitted through the film tends to increase. The shape and size of the patterned film are not particularly limited. The patterned film has, for example, a square shape in plan view.

藉由對膜照射紫外光或可見光（例如藍色光），可發出與照射光不同的波長的光。藉由選擇半導體粒子（A）的成分或粒徑，可選擇發出的光的波長。膜由於具有對照射光的波長進行轉換的功能，因此能夠作為顯示裝置的顏色轉換層等來利用。本發明的膜可顯示出良好的發光強度。By irradiating the film with ultraviolet light or visible light (for example, blue light), light of a wavelength different from that of the irradiated light can be emitted. By selecting the composition and particle size of the semiconductor particles (A), the wavelength of emitted light can be selected. Since the film has a function of converting the wavelength of irradiated light, it can be utilized as a color conversion layer of a display device or the like. The films of the present invention can exhibit good luminous intensity.

膜可於其發光光譜中具有極大波長為480 nm以上且560 nm以下或者570 nm以上且680 nm以下的發光波峰。 於一個實施形態中，膜包含所述半導體粒子（A-1），且於其發光光譜中具有極大波長為480 nm以上且560 nm以下、較佳為500 nm以上且560 nm以下、更佳為520 nm以上且550 nm以下的發光波峰。於其他實施形態中，膜包含所述半導體粒子（A-2），且於其發光光譜中具有極大波長為570 nm以上且680 nm以下、較佳為590 nm以上且660 nm以下、更佳為600 nm以上且650 nm以下的發光波峰。膜的所述發光波峰的半峰全幅值較佳為50 nm以下，更佳為45 nm以下。該半峰全幅值可為20 nm以上或30 nm以上。膜的發光光譜可依照後述的實施例一欄中記載的測定方法來測定。 The film may have an emission peak having a maximum wavelength of 480 nm to 560 nm or 570 nm to 680 nm in its emission spectrum. In one embodiment, the film contains the semiconductor particles (A-1), and has a maximum wavelength in the emission spectrum of 480 nm to 560 nm, preferably 500 nm to 560 nm, more preferably Luminescence peaks above 520 nm and below 550 nm. In another embodiment, the film contains the semiconductor particles (A-2), and has a maximum wavelength in the emission spectrum of 570 nm to 680 nm, preferably 590 nm to 660 nm, more preferably Luminescence peaks above 600 nm and below 650 nm. The full half-maximum value of the luminescence peak of the film is preferably 50 nm or less, more preferably 45 nm or less. The full amplitude at half maximum may be greater than 20 nm or greater than 30 nm. The emission spectrum of the film can be measured in accordance with the measurement method described in the section of Examples described later.

＜顯示裝置＞ 本發明的膜可顯示出良好的發光強度，因此有效用作顯示裝置、特別是液晶顯示裝置、有機電致發光（electroluminescence，EL）顯示裝置或無機EL顯示裝置中的顏色轉換層（波長轉換層）。作為所述顯示裝置，例如可列舉：日本專利特開2006-309219號公報、日本專利特開2006-310303號公報、日本專利特開2013-15812號公報、日本專利特開2009-251129號公報、日本專利特開2014-2363號公報等中記載的顯示裝置。 ＜Display device＞ The film of the present invention can exhibit good luminous intensity and is therefore effectively used as a color conversion layer (wavelength conversion layer) in a display device, particularly a liquid crystal display device, an organic electroluminescence (electroluminescence, EL) display device, or an inorganic EL display device. ). Examples of the display device include Japanese Patent Application Laid-Open No. 2006-309219, Japanese Patent Laid-Open No. 2006-310303, Japanese Patent Laid-Open No. 2013-15812, Japanese Patent Laid-Open No. 2009-251129, The display device described in Japanese Patent Application Laid-Open No. 2014-2363 and the like.

本發明的顯示裝置包括所述膜，通常進而包括光源。顯示裝置例如可進而包括光吸收層、光反射構件（反射膜等）、擴散膜、亮度強化部、稜鏡片、導光板、部件間的介質材料層等層。The display device of the present invention comprises said film and usually further comprises a light source. For example, the display device may further include layers such as a light-absorbing layer, a light-reflecting member (reflection film, etc.), a diffusion film, a brightness enhancement part, a sheet, a light guide plate, and a dielectric material layer between components.

光吸收層為具有透過特定波長範圍的光、並吸收除此以外的波長範圍的光的波長選擇性的層。光吸收層通常為包含染料、顏料等著色劑的層，可配置於所述膜上。作為光吸收層，可使用先前作為彩色濾光片而公知者。The light-absorbing layer is a layer having wavelength selectivity that transmits light in a specific wavelength range and absorbs light in other wavelength ranges. The light-absorbing layer is usually a layer containing colorants such as dyes and pigments, and can be disposed on the film. As the light absorbing layer, those known as color filters can be used.

光反射構件為用於使光源的光朝向所述硬化膜反射的構件，可為反射鏡、反射粒子的膜、反射金屬膜、或反射體等。擴散膜為用於使光源的光或自膜發出的光擴散的膜，可為增幅擴散膜等。亮度強化部為用於使光的一部分朝向光傳輸的方向反射並返回的構件。The light reflection member is a member for reflecting the light from the light source toward the cured film, and may be a reflective mirror, a film reflecting particles, a reflective metal film, or a reflector. The diffusion film is a film for diffusing light from a light source or light emitted from the film, and may be an amplification diffusion film or the like. The brightness enhancement part is a member for reflecting and returning a part of the light toward the direction of light transmission.

稜鏡片具代表性的是具有基材部與稜鏡部。基材部可根據鄰接的構件而省略。稜鏡片可經由任意的適當的接著層（例如，接著劑層、黏著劑層）而貼合於鄰接的構件。稜鏡片是將向視認側的相反側（背面側）凸出的多個單位稜鏡並列而構成。藉由將稜鏡片的凸部朝向背面側配置，透過稜鏡片的光容易聚光。另外，若將稜鏡片的凸部朝向背面側配置，則與將凸部朝向視認側配置的情況相比較，未入射到稜鏡片而反射的光少，可獲得亮度高的顯示裝置。A typical sheet has a substrate portion and an embossed portion. The base portion may be omitted depending on adjacent members. The sheet can be bonded to an adjacent member via any appropriate adhesive layer (for example, an adhesive layer, an adhesive layer). The 稜鏡 sheet is constructed by juxtaposing a plurality of unit 訜鏡 that protrude toward the side opposite to the viewing side (back side). By arranging the convex portion of the scalloped sheet toward the back side, the light transmitted through the scalloped sheet can be easily focused. In addition, when the convex portion of the algal sheet is arranged toward the back side, compared with the case of arranging the convex portion toward the viewing side, less light is reflected without incident on the algal sheet, and a display device with high brightness can be obtained.

作為導光板，可使用任意適當的導光板。例如，為了使來自橫向的光能夠向厚度方向偏轉，而使用於背面側形成有透鏡圖案的導光板、於背面側及/或視認側形成有稜鏡形狀等的導光板。As the light guide plate, any appropriate light guide plate can be used. For example, in order to deflect light from the lateral direction in the thickness direction, a light guide plate with a lens pattern formed on the back side, or a light guide plate formed with a fringe shape on the back side and/or the viewing side is used.

顯示裝置可於鄰接的部件（層）間的光路上包括包含一個以上的介質材料的層。作為一個以上的介質材料，例如包含真空、空氣、氣體、光學材料、接著劑、光學接著劑、玻璃、聚合物、固體、液體、凝膠、硬化材料、光學結合材料、折射率匹配或折射率失配材料、折射率梯度材料、包覆（cladding）或抗包覆材料、間隔件、矽膠、亮度強化材料、散射或擴散材料、反射或抗反射材料、波長選擇性材料、波長選擇性抗反射材料或該技術領域中已知的其他適宜的介質，但並不限定於該些，亦可包含任意適宜的材料。The display device may include layers comprising more than one dielectric material on the optical path between adjacent components (layers). As more than one dielectric material, for example including vacuum, air, gas, optical material, adhesive, optical adhesive, glass, polymer, solid, liquid, gel, hardened material, optical bonding material, refractive index matching or refractive index Mismatch materials, index gradient materials, cladding or anti-cladding materials, spacers, silicone, brightness enhancing materials, scattering or diffusing materials, reflective or antireflective materials, wavelength selective materials, wavelength selective antireflection materials or other suitable media known in the technical field, but not limited to these, may also include any suitable material.

作為顯示裝置的具體例，例如可列舉包括EL顯示器或液晶顯示器用的波長轉換材料的裝置。具體而言，可列舉：將作為波長轉換層的所述膜以沿著導光板的端面（側面）的方式，配置於藍色光源與導光板之間，設為放出白色光的背光（邊緣上（on-edge）方式的背光），並於導光板側配置光吸收層而成的顯示裝置；將作為波長轉換層的所述膜設置於導光板上，設為將自放置於導光板的端面（側面）的藍色光源經由導光板而照射至波長轉換層的光以白色光的形式放出的背光（表面安裝方式的背光），並於波長轉換層上配置光吸收層而成的顯示裝置；將所述膜設置於藍色光源的發光部附近並設為波長轉換層，設為將所照射的光以白色光的形式放出的背光（晶片上（on-chip）方式的背光），並於波長轉換層上配置光吸收層而成的顯示裝置；包括具有彼此不同的區域即第一區域、第二區域及第三區域的藍色光源、配置於該藍色光源的第一區域上且作為發出紅色光的所述膜的第一波長轉換層、配置於該藍色光源的第二區域上且作為發出綠色光的所述膜的第二波長轉換層、視需要配置於第一波長轉換層上且透過紅色光的第一光吸收層、以及視需要配置於第二波長轉換層上且透過綠色光的第二光吸收層的、具有紅色發光區域（即，第一區域）、綠色發光區域（即，第二區域）及藍色發光區域（即，第三區域）的顯示裝置等。 [實施例] As a specific example of a display device, a device including a wavelength conversion material for an EL display or a liquid crystal display can be cited, for example. Specifically, the film as the wavelength conversion layer is arranged between the blue light source and the light guide plate along the end surface (side surface) of the light guide plate, and is used as a backlight emitting white light (on the edge). (on-edge) type backlight) and a display device in which a light-absorbing layer is arranged on the side of the light guide plate; the film as the wavelength conversion layer is provided on the light guide plate, and is set to be placed on the end surface of the light guide plate (side) blue light source through the light guide plate, the light irradiated to the wavelength conversion layer is emitted in the form of white light (surface mount backlight), and a display device is formed by disposing a light absorption layer on the wavelength conversion layer; The film was placed near the light-emitting part of the blue light source as a wavelength conversion layer, and was used as a backlight (on-chip backlight) that emits irradiated light as white light. A display device in which a light-absorbing layer is arranged on a wavelength conversion layer; including a blue light source having different regions, that is, a first region, a second region, and a third region, arranged on the first region of the blue light source and used as The first wavelength conversion layer of the film emitting red light, the second wavelength conversion layer disposed on the second region of the blue light source and serving as the film emitting green light, optionally disposed on the first wavelength conversion layer The first light-absorbing layer on and through the red light, and the second light-absorbing layer arranged on the second wavelength conversion layer and passing through the green light as required, has a red light-emitting region (that is, the first region), a green light-emitting region (that is, the second region) and the display device of the blue light-emitting region (that is, the third region). [Example]

以下，藉由實施例而對本發明更詳細地進行說明。例中的「%」及「份」只要並無特別記載，則為質量%及質量份。Hereinafter, the present invention will be described in more detail by means of examples. "%" and "parts" in the examples are mass % and mass parts unless otherwise specified.

＜測定＞ （1）膜的厚度 關於所製作的膜（硬化膜），使用膜厚測定裝置（布魯克（Bruker）公司製造的「代塔卡（DEKTAK）XT」）測定厚度。 ＜Measurement＞ (1) Film thickness The thickness of the produced film (cured film) was measured using a film thickness measuring device (“DEKTAK XT” manufactured by Bruker Corporation).

（2）半導體粒子（A）的發光光譜 使用絕對PL量子產率測定裝置（濱松光子（Hamamatsu Photonics）製造的「C9920-02」、激發光450 nm、室溫、大氣下），對以波長450 nm下的吸光度成為0.4的方式利用丙二醇單甲醚乙酸酯（以下，稱為「PGMEA」）進行稀釋而成的半導體粒子（A-1）的分散液b的發光光譜進行測定。關於半導體粒子（A-2）的分散液bb，亦同樣地測定發光光譜。 半導體粒子（A-1）具有極大波長為542 nm的發光波峰。半導體粒子（A-2）具有極大波長為637 nm的發光波峰。 (2) Luminescence spectrum of semiconductor particle (A) Using an absolute PL quantum yield measurement device ("C9920-02" manufactured by Hamamatsu Photonics, excitation light 450 nm, room temperature, under the atmosphere), the absorbance at a wavelength of 450 nm was 0.4 using propylene glycol monolayer. The emission spectrum of the dispersion b of the semiconductor particles (A-1) diluted with methyl ether acetate (hereinafter referred to as “PGMEA”) was measured. The emission spectrum of the dispersion liquid bb of the semiconductor particles (A-2) was also measured in the same manner. The semiconductor particle (A-1) has an emission peak with a maximum wavelength of 542 nm. The semiconductor particle (A-2) has an emission peak with a maximum wavelength of 637 nm.

（3）發光性有機化合物（B）的發光光譜 使用絕對PL量子產率測定裝置（濱松光子（Hamamatsu Photonics）製造的「C9920-02」、激發光450 nm、室溫、大氣下），對以波長450 nm下的吸光度成為0.1以上且0.5以下的方式將發光性有機化合物（B）配置於玻璃基板上而成的樣品的發光光譜進行測定。 (3) Luminescent Spectrum of Luminescent Organic Compound (B) Using an absolute PL quantum yield measurement device ("C9920-02" manufactured by Hamamatsu Photonics, excitation light 450 nm, room temperature, under the atmosphere), the absorbance at a wavelength of 450 nm is 0.1 to 0.5 Method The emission spectrum of a sample obtained by disposing the light-emitting organic compound (B) on a glass substrate was measured.

（4）膜的發光光譜 將後述的實施例或比較例中所製作的玻璃基板與硬化膜的積層體設為測定樣品，使用絕對PL量子產率測定裝置（濱松光子（Hamamatsu Photonics）製造的「C9920-02」、激發光450 nm、室溫、大氣下），對該測定樣品的發光光譜進行測定。根據所獲得的發光光譜，求出極大波長為480 nm以上且560 nm以下或者570 nm以上且680 nm以下的發光波峰的最大波長（λmax）與該發光波峰的半峰全幅值。 (4) Luminescence spectrum of the film The laminate of the glass substrate and the cured film produced in Examples or Comparative Examples described later was used as a measurement sample, and an absolute PL quantum yield measurement device ("C9920-02" manufactured by Hamamatsu Photonics), excitation light 450 nm, room temperature, under the atmosphere), and measure the emission spectrum of the measurement sample. From the obtained luminescence spectrum, the maximum wavelength (λmax) of the luminescence peak with a maximum wavelength of 480 nm to 560 nm or 570 nm to 680 nm and the full half-maximum value of the luminescence peak are obtained.

（5）半導體粒子（A）的吸光光譜 藉由對半導體粒子（A-1）的分散液b加入PGMEA，而以測定時的吸光度的最高值於250 nm以上且800 nm以下的波長區域中成為4以下的方式進行調整，獲得測定樣品。使用包括積分球的紫外可見近紅外分光光度計（島津製作所（股）製造的「UV-3600」），對該測定樣品的吸光光譜進行測定（測定波長間隔：0.5 nm）。背景藉由PGMEA溶媒取得。關於半導體粒子（A-2）的分散液bb，亦同樣地測定吸光光譜。 半導體粒子（A-1）具有極大波長為498 nm（四捨五入值）的吸光波峰。半導體粒子（A-2）具有極大波長為605 nm（四捨五入值）的吸光波峰。 (5) Absorption spectrum of semiconductor particle (A) A measurement sample was obtained by adding PGMEA to the dispersion b of the semiconductor particles (A-1) to adjust the maximum absorbance value during measurement to be 4 or less in the wavelength range from 250 nm to 800 nm. The absorption spectrum of the measurement sample was measured using an ultraviolet-visible-near-infrared spectrophotometer ("UV-3600" manufactured by Shimadzu Corporation) including an integrating sphere (measurement wavelength interval: 0.5 nm). The background was obtained by PGMEA vehicle. The absorption spectrum was also measured for the dispersion liquid bb of the semiconductor particles (A-2) in the same manner. The semiconductor particle (A-1) has an absorption peak with a maximum wavelength of 498 nm (rounded value). The semiconductor particle (A-2) has an absorption peak with a maximum wavelength of 605 nm (rounded value).

（6）發光性有機化合物（B）的吸光光譜 將發光性有機化合物（B）溶解於能夠溶解其的溶媒中而獲得溶液。以測定時的吸光度的最高值於250 nm以上且800 nm以下的波長區域中成為4以下的方式調整溶液中的發光性有機化合物（B）的濃度。將該溶液塗佈於玻璃基板上並進行乾燥，藉此獲得玻璃基板與塗膜的積層體，將其設為測定樣品。於無法藉由溶液的塗佈、乾燥而獲得平滑的膜的情況下，將溶液自身設為測定樣品。使用包括積分球的紫外可見近紅外分光光度計（島津製作所（股）製造的「UV-3600」），對該測定樣品的吸光光譜進行測定（測定波長間隔：0.5 nm）。測定值的表述為四捨五入值。背景是藉由未塗佈任何物質的玻璃基板、以及用於使發光性有機化合物（B）溶解的溶媒單質來取得。 (6) Absorption spectrum of luminescent organic compound (B) A solution is obtained by dissolving the light-emitting organic compound (B) in a solvent capable of dissolving it. The concentration of the light-emitting organic compound (B) in the solution is adjusted so that the maximum value of absorbance during measurement becomes 4 or less in the wavelength region of 250 nm to 800 nm. This solution was applied on a glass substrate and dried to obtain a laminate of the glass substrate and the coating film, which was used as a measurement sample. When a smooth film cannot be obtained by applying and drying the solution, the solution itself is used as a measurement sample. The absorption spectrum of the measurement sample was measured using an ultraviolet-visible-near-infrared spectrophotometer ("UV-3600" manufactured by Shimadzu Corporation) including an integrating sphere (measurement wavelength interval: 0.5 nm). The expression of the measured value is a rounded value. The background was obtained from a glass substrate not coated with any substance, and a simple substance of a solvent for dissolving the light-emitting organic compound (B).

（7）膜的吸光光譜 將後述的實施例或比較例中所製作的玻璃基板與硬化膜的積層體設為測定樣品，使用包括積分球的紫外可見近紅外分光光度計（島津製作所（股）製造的「UV-3600」），對該測定樣品的吸光光譜進行測定（測定波長間隔：0.5 nm）。背景藉由玻璃基板取得。根據所獲得的吸光光譜，求出波長450 nm下的吸光度。測定值的表述為四捨五入值。 (7) Absorption spectrum of the film A laminate of a glass substrate and a cured film produced in Examples or Comparative Examples described later was used as a measurement sample, and an ultraviolet-visible-near-infrared spectrophotometer ("UV-3600" manufactured by Shimadzu Corporation) including an integrating sphere was used. ), and measure the absorption spectrum of the measurement sample (measurement wavelength interval: 0.5 nm). The background was obtained with a glass substrate. From the obtained absorption spectrum, the absorbance at a wavelength of 450 nm was calculated. The expression of the measured value is a rounded value.

（8）膜的發光強度EI' 於將發光波峰波長為450 nm的藍色發光二極體（Light-Emitting Diode，LED）燈設為點光源的背光上配置光擴散板，製成背光部。將光擴散板朝上並載置背光部，於距光擴散板的表面為高度60 cm的位置處設置分光放射亮度計（拓普康（Topcon）（股）製造的「SR-UL1R」）。將後述的實施例或比較例中所製作的玻璃基板與硬化膜的積層體設為測定樣品，將該測定樣品以硬化膜朝上的方式配置於光擴散板的表面。於該狀態下點亮背光，對於自硬化膜發出的光，使用所述分光放射亮度計測定分光放射亮度光譜（測定波長間隔：1 nm），根據該光譜，求出所述（4）中所獲得的極大波長為480 nm以上且560 nm以下或者570 nm以上且680 nm以下的發光波峰的相對於未設置測定樣品而測定的400 nm以上且500 nm以下的波長區域的積分值的比。而且，假設1.0×10 4μW･cm -2的光源，假設自該光源的表面1 cm 2放射出的激發光，藉由對所述比乘以1.0×10 4，算出膜的發光強度EI（μW）。進而，基於下述式，利用膜的厚度5 μm或4 μm對所獲得的EI進行標準化，求出EI'（膜的厚度為5 μm或4 μm時的EI）。 EI'（μW）=EI（μW）×5或4（μm）/膜的厚度（μm） (8) Luminous Intensity EI' of Film A light diffusion plate was placed on a backlight in which a blue Light-Emitting Diode (LED) lamp with an emission peak wavelength of 450 nm was used as a point light source to form a backlight portion. The backlight was placed with the light-diffusing plate facing upward, and a spectroradiance meter ("SR-UL1R" manufactured by Topcon Co., Ltd.) was installed at a position at a height of 60 cm from the surface of the light-diffusing plate. The laminated body of the glass substrate and the cured film produced in the Example or comparative example mentioned later was made into a measurement sample, and this measurement sample was arrange|positioned on the surface of a light-diffusion plate so that a cured film may face upward. In this state, the backlight is turned on, and the spectroradiance spectrum (measurement wavelength interval: 1 nm) is measured with the spectroradiometer for the light emitted from the cured film. From this spectrum, the value specified in (4) above is obtained. The obtained maximum wavelength is the ratio of the integral value of the emission peak of 480 nm to 560 nm or 570 nm to 680 nm relative to the wavelength range of 400 nm to 500 nm measured without setting a measurement sample. Furthermore, assuming a light source of 1.0×10 4 μW·cm −2 , assuming excitation light emitted from the surface 1 cm 2 of the light source, the luminous intensity EI of the film was calculated by multiplying the ratio by 1.0×10 4 ( µW). Furthermore, based on the following formula, the obtained EI was normalized by the film thickness of 5 μm or 4 μm to obtain EI′ (EI when the film thickness is 5 μm or 4 μm). EI' (μW) = EI (μW) × 5 or 4 (μm) / film thickness (μm)

（9）樹脂的重量平均分子量Mw及數量平均分子量Mn 樹脂的重量平均分子量Mw及數量平均分子量Mn的測定是藉由GPC法並於以下條件下進行（標準聚苯乙烯換算）。 裝置：K2479（島津製作所（股）製造） 管柱：島津（SHIMADZU） Shim-pack GPC-80M 管柱溫度：40℃ 溶媒：四氫呋喃 流速：1.0 mL/分鐘 檢測器：RI（折射率（Refractive Index）） 校正用標準物質：TSK標準聚苯乙烯（STANDARD POLYSTYRENE）F-40、F-4、F-288、A-2500、A-500（東曹（tosoh）（股）製造） (9) Weight average molecular weight Mw and number average molecular weight Mn of the resin The weight average molecular weight Mw and the number average molecular weight Mn of resin were measured by the GPC method under the following conditions (standard polystyrene conversion). Device: K2479 (manufactured by Shimadzu Corporation) Column: Shimadzu (SHIMADZU) Shim-pack GPC-80M Column temperature: 40°C Solvent: Tetrahydrofuran Flow rate: 1.0 mL/min Detector: RI (Refractive Index) Standard material for calibration: TSK standard polystyrene (STANDARD POLYSTYRENE) F-40, F-4, F-288, A-2500, A-500 (manufactured by Tosoh Co., Ltd.)

（10）樹脂的酸價 精確秤量樹脂溶液3 g，溶解於丙酮90 g與水10 g的混合溶劑中，使用0.1規定的KOH水溶液作為滴定液，利用自動滴定裝置（平沼產業公司製造的「COM-555」）測定樹脂溶液的酸價，並根據溶液的酸價與溶液的固體成分求出每1 g固體成分的酸價（mgKOH/g）。 (10) Acid value of the resin Accurately weigh 3 g of the resin solution, dissolve it in a mixed solvent of 90 g of acetone and 10 g of water, use 0.1 KOH aqueous solution as the titrant, and measure the resin solution with an automatic titration device ("COM-555" manufactured by Hiranuma Sangyo Co., Ltd.) According to the acid value of the solution and the solid content of the solution, the acid value per 1 g of solid content (mgKOH/g) is calculated.

（11）樹脂溶液的固體成分 於鋁杯中量取約1 g樹脂溶液，在180℃下乾燥1小時後，測定質量。根據其質量減少量來計算樹脂溶液的固體成分（質量%）。 (11) Solid content of resin solution Measure about 1 g of the resin solution in an aluminum cup, dry it at 180° C. for 1 hour, and measure the mass. The solid content (mass %) of the resin solution was calculated from the mass reduction thereof.

＜製造例1-1：半導體粒子（A-1）的分散液的製備＞ 準備配位有油酸作為有機配位體（Ga）的半導體粒子（A-1）〔綠色發光的InP/ZnSeS量子點〕的甲苯分散液a。對分散液a進行減壓蒸餾，去除甲苯。相對於固體成分30份，添加二甲苯70份，獲得半導體粒子（A-1）的分散液b（固體成分30%）。 <Manufacturing Example 1-1: Preparation of Dispersion Liquid of Semiconductor Particles (A-1)> A toluene dispersion a of semiconductor particles (A-1) [green light-emitting InP/ZnSeS quantum dots] to which oleic acid was coordinated as an organic ligand (Ga) was prepared. Dispersion a was distilled under reduced pressure to remove toluene. 70 parts of xylene was added with respect to 30 parts of solid content, and the dispersion liquid b (30% of solid content) of a semiconductor particle (A-1) was obtained.

關於表1中所示的、硬化性樹脂組成物中的有機配位體（Ga）的含量，依照下述方法，測定半導體粒子（A-1）的分散液a中的有機配位體（Ga）的濃度，並基於此來進行算出。即，於在150℃下對半導體粒子（A-1）的分散液a進行真空乾燥而去除溶媒後，對於殘留的固體成分，使用熱重量分析裝置「TGDTA6200」，以升溫速度5℃/分鐘於50℃至550℃內測定重量變化。將自50℃至500℃為止的變化重量設為有機配位體（Ga）的重量，算出半導體粒子（A-1）的分散液a中的有機配位體（Ga）的濃度。Regarding the content of the organic ligand (Ga) in the curable resin composition shown in Table 1, the organic ligand (Ga) in the dispersion a of the semiconductor particles (A-1) was measured according to the following method. ) concentration, and based on this to calculate. That is, after vacuum-drying the dispersion a of semiconductor particles (A-1) at 150°C to remove the solvent, the remaining solid content was heated at a temperature increase rate of 5°C/min using a thermogravimetric analyzer "TGDTA6200". The weight change was measured from 50°C to 550°C. The concentration of the organic ligand (Ga) in the dispersion liquid a of the semiconductor particle (A-1) was calculated using the weight of the change from 50° C. to 500° C. as the weight of the organic ligand (Ga).

＜製造例1-2：半導體粒子（A-2）的分散液的製備＞ 準備配位有油酸作為有機配位體（Ga）的半導體粒子（A-2）〔紅色發光的InP/ZnSeS量子點〕的甲苯分散液aa。對分散液aa進行減壓蒸餾，去除甲苯。相對於固體成分30份，添加二甲苯70份，獲得半導體粒子（A-2）的分散液bb（固體成分30%）。關於表2中所示的、硬化性樹脂組成物中的有機配位體（Ga）的含量，與製造例1-1同樣地進行算出。 <Manufacturing Example 1-2: Preparation of dispersion liquid of semiconductor particles (A-2)> A toluene dispersion aa of semiconductor particles (A-2) [red-emitting InP/ZnSeS quantum dots] to which oleic acid was coordinated as an organic ligand (Ga) was prepared. Dispersion aa was distilled under reduced pressure to remove toluene. 70 parts of xylene was added with respect to 30 parts of solid content, and the dispersion liquid bb (30% of solid content) of the semiconductor particle (A-2) was obtained. The content of the organic ligand (Ga) in the curable resin composition shown in Table 2 was calculated in the same manner as in Production Example 1-1.

＜製造例2：光散射劑（C-1）的分散液的製備＞ 於氧化鈦奈米粒子70份中，加入以固體成分計為3份的迪斯帕畢克（DISPERBYK）21116（日本畢克化學（BYK-Chemie Japan）製造），並以所有量成為100份的方式加入PGMEA，之後利用塗料振盪器進行攪拌直至充分分散，從而獲得散射劑（C-1）的分散液（固體成分73%）。 <Production Example 2: Preparation of Dispersion Liquid of Light Scattering Agent (C-1)> To 70 parts of titanium oxide nanoparticles, add 3 parts of DISPERBYK 21116 (manufactured by BYK-Chemie Japan) in terms of solid content, and make the total amount 100 parts PGMEA was added in the same manner, and then stirred with a paint shaker until fully dispersed to obtain a dispersion liquid (solid content 73%) of the scattering agent (C-1).

＜製造例3：樹脂（D-1）溶液的製備＞ 於包括攪拌器、帶溫度計的回流冷卻管、滴加漏斗及氮氣導入管的燒瓶中，投入PGMEA 110份後，一邊進行氮氣置換一邊進行攪拌，升溫至80℃。將甲基丙烯酸二環戊烷基酯25份、甲基丙烯酸甲酯26份、甲基丙烯酸16份、2,2'-偶氮雙(2,4-二甲基戊腈)11份溶解於PGMEA 110份中而獲得溶液，自滴加漏斗將所述溶液滴加至燒瓶中後，於80℃下攪拌3小時。 接著，將甲基丙烯酸縮水甘油酯16份、2,2'-亞甲基雙(4-甲基-6-第三丁基苯酚)0.4份、三苯基膦0.8份投入至燒瓶內，升溫至110℃並攪拌8小時，藉此使聚合物中的羧酸與環氧基反應，從而導入聚合性不飽和鍵。繼而，加入1,2,3,6-四氫鄰苯二甲酸酐17份並繼續反應3小時，從而將羧酸基導入至側鏈。將反應液冷卻至室溫，藉此獲得樹脂（D-1）溶液。 關於樹脂（D-1），標準聚苯乙烯換算的重量平均分子量Mw為7600，分子量分佈為2.1，酸價為100 mgKOH/g，樹脂（D-1）溶液中的固體成分為40質量%。 <Manufacturing example 3: Preparation of resin (D-1) solution> After injecting 110 parts of PGMEA into a flask including a stirrer, a reflux cooling tube with a thermometer, a dropping funnel, and a nitrogen gas introduction tube, the mixture was stirred while replacing nitrogen gas, and the temperature was raised to 80°C. Dissolve 25 parts of dicyclopentyl methacrylate, 26 parts of methyl methacrylate, 16 parts of methacrylic acid, and 11 parts of 2,2'-azobis(2,4-dimethylvaleronitrile) in 110 parts of PGMEA was added to obtain a solution, and the solution was added dropwise to the flask from the dropping funnel, followed by stirring at 80° C. for 3 hours. Next, 16 parts of glycidyl methacrylate, 0.4 parts of 2,2'-methylenebis(4-methyl-6-tert-butylphenol), and 0.8 parts of triphenylphosphine were put into the flask, and the temperature was raised. The mixture was stirred at 110° C. for 8 hours to introduce a polymerizable unsaturated bond by reacting the carboxylic acid and epoxy group in the polymer. Then, 17 parts of 1,2,3,6-tetrahydrophthalic anhydrides were added and the reaction was continued for 3 hours to introduce a carboxylic acid group into the side chain. The reaction liquid was cooled to room temperature, thereby obtaining a resin (D-1) solution. The resin (D-1) had a standard polystyrene-equivalent weight average molecular weight Mw of 7600, a molecular weight distribution of 2.1, an acid value of 100 mgKOH/g, and a solid content of the resin (D-1) solution of 40% by mass.

＜實施例1～實施例3、比較例1＞ （1）硬化性樹脂組成物的製備 將製造例1-1中所獲得的半導體粒子（A-1）的分散液b、製造例2中所獲得的光散射劑（C-1）的分散液、製造例3中所獲得的樹脂（D-1）溶液、以及表1中所示的其他成分分別以規定量混合，從而製備硬化性樹脂組成物。 <Example 1 to Example 3, Comparative Example 1> (1) Preparation of curable resin composition The dispersion b of the semiconductor particles (A-1) obtained in Production Example 1-1, the dispersion liquid of the light-scattering agent (C-1) obtained in Production Example 2, and the resin obtained in Production Example 3 ( D-1) The solution and other components shown in Table 1 were mixed in predetermined amounts to prepare a curable resin composition.

根據添加量而求出的硬化性樹脂組成物中的各成分的含量為如表1中所示般。於表1中，溶劑（J）以外的成分為固體成分換算的含量（單位：質量份）。溶劑（J）的含量的單位為質量份。例如，關於半導體粒子（A-1），於硬化性樹脂組成物的製備中是以半導體粒子（A-1）的分散液的形式來調配，但表1中所示的含量是該分散液中所含的半導體粒子（A-1）其自身的量。表1中的溶劑（J）中包含硬化性樹脂組成物的製備中使用的分散液或溶液中所含有的溶劑。The content of each component in the curable resin composition determined from the added amount is as shown in Table 1. In Table 1, components other than the solvent (J) are contents in terms of solid contents (unit: parts by mass). The unit of the content of the solvent (J) is parts by mass. For example, the semiconductor particle (A-1) is formulated as a dispersion of the semiconductor particle (A-1) in the preparation of the curable resin composition, but the content shown in Table 1 is the amount in the dispersion. The amount of contained semiconductor particles (A-1) itself. The solvent (J) in Table 1 includes the solvent contained in the dispersion liquid or the solution used for the preparation of the curable resin composition.

（2）膜的製作 於5 cm見方的玻璃基板（康寧（Corning）公司製造的「益格（eagle）2000」）上藉由旋塗法塗佈硬化性樹脂組成物後，於100℃下預烘烤3分鐘而形成硬化性組成物層。對於形成有該硬化性組成物層的基板，使用曝光機（牛尾電機（股）製造的「手動遮罩對準器（manual mask aligner）（UPE-1255MA）」），於大氣環境下以40 mJ/cm 2的曝光量（以365 nm為基準）進行光照射，進行顯影後，在180℃下進行30分鐘後烘烤，藉此形成硬化膜。 (2) Fabrication of film After coating a curable resin composition by spin coating on a 5 cm square glass substrate ("Eagle 2000" manufactured by Corning Corporation), pre-prepared at 100°C. Bake for 3 minutes to form a curable composition layer. The substrate on which this curable composition layer was formed was exposed to light at 40 mJ in an air environment using an exposure machine (“manual mask aligner (UPE-1255MA)” manufactured by Ushio Electric Co., Ltd.). / cm2 (based on 365 nm) light exposure, after development, post-baking at 180°C for 30 minutes to form a cured film.

關於實施例1～實施例3及比較例1中所獲得的膜（硬化膜），求出厚度、具有表1所示的最大波長（λmax）的發光波峰的半峰全幅值、波長450 nm下的吸光度、以及發光強度EI'（膜的厚度為5 μm時的EI）。將該些的結果示於表1中。For the films (cured films) obtained in Examples 1 to 3 and Comparative Example 1, the thickness, the full half-maximum value of the emission peak having the maximum wavelength (λmax) shown in Table 1, and the wavelength of 450 nm were obtained. Absorbance and luminescence intensity EI' (EI when the thickness of the film is 5 μm). These results are shown in Table 1.

[表1]    實施例 比較例 1 2 3 1 組成物 半導體粒子（A） A-1 5.5 5.5 5.5 5.5 A-2 - - - - 有機配位體（G） Ga 2.0 2.0 2.0 2.0 發光性有機化合物（B） B-1 0.0011 0.0053 0.0319 - B-2 - - - - 光散射劑（C） C-1 1.0 1.0 1.0 1.0 樹脂（D） D-1 7.2 7.2 7.2 7.2 聚合性化合物（E） E-1 1.6 1.6 1.6 1.6 E-2 1.5 1.5 1.5 1.5 聚合起始劑（F） F-1 0.2 0.2 0.2 0.2 抗氧化劑（H） H-1 0.7 0.7 0.7 0.7 調平劑（I） I-1 0.3 0.3 0.3 0.3 合計 20 20 20 20 溶劑（J） J-1 30 30 30 30 J-2 50 50 50 50 組成物的固體成分 （質量%） 20 20 20 20 膜 厚度 （μm） 4.9 4.9 3.7 5.0 波長450 nm下的吸光度    0.83 0.81 0.71 0.76 發光波峰 最大波長λmax （nm） 542 542 540 542 發光波峰 半峰全幅值 （nm） 38 38 40 39 發光強度EI' （μW） 1918 1916 1974 1627 [Table 1] Example comparative example 1 2 3 1 Composition Semiconductor particles (A) A-1 5.5 5.5 5.5 5.5 A-2 - - - - Organic Ligand (G) Ga 2.0 2.0 2.0 2.0 Luminescent organic compound (B) B-1 0.0011 0.0053 0.0319 - B-2 - - - - Light scattering agent (C) C-1 1.0 1.0 1.0 1.0 Resin (D) D-1 7.2 7.2 7.2 7.2 Polymeric compound (E) E-1 1.6 1.6 1.6 1.6 E-2 1.5 1.5 1.5 1.5 Polymerization initiator (F) F-1 0.2 0.2 0.2 0.2 Antioxidant (H) H-1 0.7 0.7 0.7 0.7 Leveling agent (I) I-1 0.3 0.3 0.3 0.3 total 20 20 20 20 Solvent (J) J-1 30 30 30 30 J-2 50 50 50 50 The solid content of the composition (quality%) 20 20 20 20 membrane thickness (μm) 4.9 4.9 3.7 5.0 Absorbance at a wavelength of 450 nm 0.83 0.81 0.71 0.76 Luminescence peak maximum wavelength λmax (nm) 542 542 540 542 Full amplitude at half peak of luminescence peak (nm) 38 38 40 39 Luminous intensity EI' (μW) 1918 1916 1974 1627

表1（關於表2亦同樣如此）中所示的成分的簡稱的詳細情況為如下所述。 〔1〕有機配位體（Ga）：油酸 〔2〕發光性有機化合物（B-1）：以50/45/5的莫耳比含有所述構成單元M1、構成單元M2以及構成單元M4的發光性有機聚合物（固體成分100%）。參考日本專利特開2008-133346號公報的合成例1中所記載的方法來製造。發光性有機化合物（B-1）的聚苯乙烯換算的重量平均分子量Mw為2.6×10 5，數量平均分子量Mn為1.1×10 5。另外，對發光性有機化合物（B-1）的發光光譜進行測定，結果具有極大波長為485 nm的發光波峰，對吸光光譜進行測定，結果具有極大波長為390 nm的吸光波峰。 〔3〕發光性有機化合物（B-2）：下述式所表示的化合物（固體成分100%）。對發光性有機化合物（B-2）的發光光譜進行測定，結果具有極大波長為520 nm的發光波峰，對吸光光譜進行測定，結果具有極大波長為500 nm的吸光波峰。 The details of the abbreviations of the components shown in Table 1 (the same applies to Table 2) are as follows. [1] Organic ligand (Ga): oleic acid [2] Luminescent organic compound (B-1): Contains the above-mentioned constituent unit M1, constituent unit M2, and constituent unit M4 at a molar ratio of 50/45/5 Light-emitting organic polymer (solid content 100%). It was produced with reference to the method described in Synthesis Example 1 of JP-A-2008-133346. The polystyrene-equivalent weight average molecular weight Mw of the light-emitting organic compound (B-1) was 2.6×10 5 , and the number average molecular weight Mn was 1.1×10 5 . In addition, the emission spectrum of the light emitting organic compound (B-1) was measured to have an emission peak with a maximum wavelength of 485 nm, and the absorption spectrum was measured to have an absorption peak with a maximum wavelength of 390 nm. [3] Light-emitting organic compound (B-2): a compound represented by the following formula (solid content: 100%). The light emission spectrum of the light emitting organic compound (B-2) was measured to have an emission peak with a maximum wavelength of 520 nm, and the absorption spectrum was measured to have an absorption peak with a maximum wavelength of 500 nm.

[化28] [chem 28]

〔4〕聚合性化合物（E-1）：光聚合性化合物。M-510（具有羧基的多元酸改質丙烯酸酯、東亞合成公司製造、固體成分100%） 〔5〕聚合性化合物（E-2）：光聚合性化合物。A-9550（二季戊四醇聚丙烯酸酯、新中村化學公司製造、固體成分100%） 〔6〕聚合起始劑（F-1）：光聚合起始劑。下述式所表示的化合物（固體成分100%）。利用日本專利特開2011-132215號公報中所記載的方法來製造。 [4] Polymerizable compound (E-1): A photopolymerizable compound. M-510 (polyacid-modified acrylate having a carboxyl group, manufactured by Toagosei Co., Ltd., solid content 100%) [5] Polymerizable compound (E-2): a photopolymerizable compound. A-9550 (dipentaerythritol polyacrylate, manufactured by Shin-Nakamura Chemical Co., Ltd., solid content 100%) [6] Polymerization initiator (F-1): a photopolymerization initiator. A compound represented by the following formula (solid content 100%). It was manufactured by the method described in Unexamined-Japanese-Patent No. 2011-132215.

[化29] [chem 29]

〔7〕抗氧化劑（H-1）：蘇米萊澤（Sumilizer）-GP（磷/酚複合型抗氧化劑、住友化學公司製造、固體成分100%） 〔8〕調平劑（I-1）：F-554（氟系調平劑、迪愛生（DIC）公司製造、固體成分100%） 〔9〕溶劑（J-1）：PGMEA（丙二醇單甲醚乙酸酯） 〔10〕溶劑（J-2）：二甲苯 [7] Antioxidant (H-1): Sumilizer-GP (phosphorus/phenol compound antioxidant, manufactured by Sumitomo Chemical Co., Ltd., solid content 100%) [8] Leveling agent (I-1): F-554 (fluorine-based leveling agent, manufactured by DIC, 100% solid content) [9] Solvent (J-1): PGMEA (propylene glycol monomethyl ether acetate) [10] Solvent (J-2): Xylene

＜實施例4～實施例6、比較例2＞ （1）硬化性樹脂組成物的製備 將製造例1-2中所獲得的半導體粒子（A-2）的分散液bb、製造例2中所獲得的光散射劑（C-1）的分散液（僅實施例4）、製造例3中所獲得的樹脂（D-1）溶液、以及表2中所示的其他成分分別以規定量混合，從而製備硬化性樹脂組成物。 <Example 4 to Example 6, Comparative Example 2> (1) Preparation of curable resin composition The dispersion liquid bb of the semiconductor particle (A-2) obtained in Production Example 1-2, the dispersion liquid of the light scattering agent (C-1) obtained in Production Example 2 (only Example 4), the dispersion liquid of Production Example 3 The resin (D-1) solution obtained in , and other components shown in Table 2 were mixed in predetermined amounts to prepare a curable resin composition.

根據添加量而求出的硬化性樹脂組成物中的各成分的含量為如表2中所示般。於表2中，溶劑（J）以外的成分為固體成分換算的含量（單位：質量份）。溶劑（J）的含量的單位為質量份。例如，關於半導體粒子（A-2），於硬化性樹脂組成物的製備中是以半導體粒子（A-2）的分散液的形式來調配，但表2中所示的含量是該分散液中所含的半導體粒子（A-2）其自身的量。表2中的溶劑（J）中包含硬化性樹脂組成物的製備中使用的分散液或溶液中所含有的溶劑。The content of each component in the curable resin composition determined from the added amount is as shown in Table 2. In Table 2, components other than the solvent (J) are contents in terms of solid contents (unit: parts by mass). The unit of the content of the solvent (J) is parts by mass. For example, the semiconductor particles (A-2) are formulated as a dispersion of the semiconductor particles (A-2) in the preparation of the curable resin composition, but the contents shown in Table 2 are those in the dispersion. The amount of contained semiconductor particles (A-2) itself. The solvent (J) in Table 2 includes the solvent contained in the dispersion liquid or the solution used for the preparation of the curable resin composition.

（2）膜的製作 與實施例1～實施例3、比較例1同樣地形成硬化膜。 (2) Membrane production A cured film was formed in the same manner as in Examples 1 to 3 and Comparative Example 1.

關於實施例4～實施例6及比較例2中所獲得的膜（硬化膜），求出厚度、具有表2所示的最大波長（λmax）的發光波峰的半峰全幅值、波長450 nm下的吸光度、以及發光強度EI'（膜的厚度為4 μm時的EI）。將該些的結果示於表2中。For the films (cured films) obtained in Examples 4 to 6 and Comparative Example 2, the thickness, the full half-maximum value of the emission peak having the maximum wavelength (λmax) shown in Table 2, and the wavelength of 450 nm were obtained. Absorbance and luminescence intensity EI' (EI when the thickness of the film is 4 μm). These results are shown in Table 2.

[表2]    實施例 比較例 4 5 6 2 組成物 半導體粒子（A） A-1 - - - - A-2 8.5 8.5 8.5 8.5 有機配位體（G） Ga 1.5 1.5 1.5 1.5 發光性有機化合物（B） B-1 - - - - B-2 0.0011 0.011 0.053 - 光散射劑（C） C-1 2.5 - - - 樹脂（D） D-1 13.1 14.6 14.6 14.6 聚合性化合物（E） E-1 1.0 1.1 1.1 1.1 E-2 7.2 7.9 7.9 7.9 聚合起始劑（F） F-1 0.2 0.2 0.2 0.2 抗氧化劑（H） H-1 0.7 0.8 0.8 0.8 調平劑（I） I-1 0.3 0.3 0.3 0.3 合計 35 35 35 35 溶劑（J） J-1 30 30 30 30 J-2 50 50 50 50 組成物的固體成分 （質量%） 30 30 30 30 膜 厚度 （μm） 4.1 4.2 4.1 4.2 波長450 nm下的吸光度    0.84 0.42 0.42 0.41 發光波峰 最大波長λmax （nm） 637 636 635 634 發光波峰 半峰全幅值 （nm） 42 44 43 44 發光強度EI' （μW） 2030 1753 1856 1699 [Table 2] Example comparative example 4 5 6 2 Composition Semiconductor particles (A) A-1 - - - - A-2 8.5 8.5 8.5 8.5 Organic Ligand (G) Ga 1.5 1.5 1.5 1.5 Luminescent organic compound (B) B-1 - - - - B-2 0.0011 0.011 0.053 - Light scattering agent (C) C-1 2.5 - - - Resin (D) D-1 13.1 14.6 14.6 14.6 Polymeric compound (E) E-1 1.0 1.1 1.1 1.1 E-2 7.2 7.9 7.9 7.9 Polymerization initiator (F) F-1 0.2 0.2 0.2 0.2 Antioxidant (H) H-1 0.7 0.8 0.8 0.8 Leveling agent (I) I-1 0.3 0.3 0.3 0.3 total 35 35 35 35 Solvent (J) J-1 30 30 30 30 J-2 50 50 50 50 The solid content of the composition (quality%) 30 30 30 30 membrane thickness (μm) 4.1 4.2 4.1 4.2 Absorbance at a wavelength of 450 nm 0.84 0.42 0.42 0.41 Luminescence peak maximum wavelength λmax (nm) 637 636 635 634 Full amplitude at half peak of luminescence peak (nm) 42 44 43 44 Luminous intensity EI' (μW) 2030 1753 1856 1699

＜製造例1-3：半導體粒子（A-1）的分散液的製備＞ 準備配位有油酸作為有機配位體（Ga）的半導體粒子（A-1）〔綠色發光的InP/ZnSeS量子點〕的甲苯分散液a。對分散液a進行減壓蒸餾，去除甲苯。相對於固體成分50份，添加二甲苯50份，獲得半導體粒子（A-1）的分散液b'（固體成分50%）。 <Manufacturing Example 1-3: Preparation of Dispersion Liquid of Semiconductor Particles (A-1)> A toluene dispersion a of semiconductor particles (A-1) [green light-emitting InP/ZnSeS quantum dots] to which oleic acid was coordinated as an organic ligand (Ga) was prepared. Dispersion a was distilled under reduced pressure to remove toluene. 50 parts of xylene was added with respect to 50 parts of solid content, and the dispersion liquid b' (solid content 50%) of semiconductor particle (A-1) was obtained.

＜製造例1-4：半導體粒子（A-2）的分散液的製備＞ 準備配位有油酸作為有機配位體（Ga）的半導體粒子（A-2）〔紅色發光的InP/ZnSeS量子點〕的甲苯分散液aa。對分散液aa進行減壓蒸餾，去除甲苯。相對於固體成分50份，添加二甲苯50份，獲得半導體粒子（A-2）的分散液bb'（固體成分50%）。 <Manufacturing Example 1-4: Preparation of dispersion liquid of semiconductor particles (A-2)> A toluene dispersion aa of semiconductor particles (A-2) [red-emitting InP/ZnSeS quantum dots] to which oleic acid was coordinated as an organic ligand (Ga) was prepared. Dispersion aa was distilled under reduced pressure to remove toluene. 50 parts of xylene was added with respect to 50 parts of solid content, and the dispersion liquid bb' (50% of solid content) of the semiconductor particle (A-2) was obtained.

＜實施例7～實施例10、比較例3＞ （1）組成物的製備 將製造例1-3中所獲得的半導體粒子（A-1）的分散液b'、以及表3中所示的其他成分分別以規定量混合，從而製備作為溶液的組成物。表3中的與各成分相關的數值為混合量，單位為質量份。表3中的溶劑（J-2）是指半導體粒子（A-1）的分散液b'中所含的二甲苯。 <Example 7 to Example 10, Comparative Example 3> (1) Preparation of composition The dispersion b′ of semiconductor particles (A-1) obtained in Production Example 1-3 and other components shown in Table 3 were mixed in predetermined amounts to prepare a composition as a solution. The numerical value related to each component in Table 3 is a mixing amount, and the unit is a mass part. The solvent (J-2) in Table 3 refers to xylene contained in the dispersion liquid b' of the semiconductor particles (A-1).

（2）膜的製作 準備2片大致正方形的玻璃板。於其中一玻璃板的4角，載置混合有二氧化矽粒子（粒徑100 μm～200 μm）的結合劑，夾著該些結合劑重疊另一玻璃板。於2片玻璃板的間隙中注入所述（1）中所獲得的組成物，利用毛細管現象，於玻璃板間形成該組成物的膜。膜的厚度為約100 μm。 (2) Membrane production Prepare 2 roughly square glass plates. A binder mixed with silica particles (particle size 100 μm to 200 μm) is placed on the four corners of one of the glass plates, and the other glass plate is superimposed with the binder interposed therebetween. The composition obtained in (1) above was injected into the gap between the two glass plates, and a film of the composition was formed between the glass plates by capillary phenomenon. The thickness of the film is about 100 μm.

（3）膜的吸光度的測定 將所述（2）中所獲得的夾持於玻璃板間的膜設為測定樣品，依照所述測定方法測定分光放射亮度光譜。於不設置測定樣品的狀態下進行相同的測定，並以此作為背景。根據測定樣品的分光放射亮度光譜中的380 nm以上且470 nm以下的波長區域的積分值S1、及背景的分光放射亮度光譜中的380 nm以上且470 nm以下的波長區域的積分值S2，依照下述式求出膜的吸光度。將結果示於表3中。 膜的吸光度A（%）=100×（S2-S1）/S2 (3) Determination of film absorbance The film sandwiched between the glass plates obtained in (2) above was used as a measurement sample, and the spectral radiance spectrum was measured according to the measurement method described above. The same measurement was performed without setting a measurement sample, and this was used as a background. Based on the integrated value S1 of the wavelength range from 380 nm to 470 nm in the spectral radiance spectrum of the measurement sample, and the integrated value S2 of the wavelength range from 380 nm to 470 nm in the spectral radiance spectrum of the background, according to The absorbance of the film was obtained by the following formula. The results are shown in Table 3. Film absorbance A (%)=100×(S2-S1)/S2

（4）膜的發光光譜的測定 將所述（2）中所獲得的夾持於玻璃板間的膜設為測定樣品，使用絕對PL量子產率測定裝置（濱松光子（Hamamatsu Photonics）製造的「C9920-02」、激發光450 nm、室溫、大氣下），對膜的發光光譜進行測定。於不設置測定樣品的狀態下進行相同的測定，並以此作為背景。求出相對於背景光譜的470 nm以上且780 nm以下的波長區域中的積分值的、針對測定樣品而獲得的發光光譜的相同波長區域中的積分值的比例B（%）。另外，根據針對測定樣品而獲得的發光光譜，求出極大波長為480 nm以上且560 nm以下的發光波峰的半峰全幅值。將結果示於表3中。 (4) Determination of the luminescence spectrum of the film The film sandwiched between the glass plates obtained in (2) above was used as a measurement sample, and an absolute PL quantum yield measurement device ("C9920-02" manufactured by Hamamatsu Photonics) was used with an excitation light of 450 nm , room temperature, and atmosphere), the luminescence spectrum of the film was measured. The same measurement was performed without setting a measurement sample, and this was used as a background. The ratio B (%) of the integral value in the same wavelength region of the emission spectrum obtained for the measurement sample to the integral value in the wavelength region of 470 nm to 780 nm of the background spectrum was obtained. In addition, from the emission spectrum obtained for the measurement sample, the full width at half maximum of the emission peak whose maximum wavelength is not less than 480 nm and not more than 560 nm is obtained. The results are shown in Table 3.

[表3]    實施例 比較例 7 8 9 10 3 組成物 半導體粒子（A） A-1 2.9 2.9 2.9 2.9 2.9 有機配位體（G） Ga 1.1 1.1 1.1 1.1 1.1 發光性有機化合物（B） B-1 2 - - - - B-3 - 2 - - - B-4 - - 2 - - B-5 - - - 2 - 溶劑（J） J-2 4 4 4 4 4 J-3 90 90 90 90 92 膜 吸光度A （%） 41 23 35 24 20 發光光譜 積分值的比例B （%） 11.44 8.48 10.25 8.55 8.45 發光波峰 半峰全幅值 （nm） 46 48 44 44 42 [table 3] Example comparative example 7 8 9 10 3 Composition Semiconductor particles (A) A-1 2.9 2.9 2.9 2.9 2.9 Organic Ligand (G) Ga 1.1 1.1 1.1 1.1 1.1 Luminescent organic compound (B) B-1 2 - - - - B-3 - 2 - - - B-4 - - 2 - - B-5 - - - 2 - Solvent (J) J-2 4 4 4 4 4 J-3 90 90 90 90 92 membrane Absorbance A (%) 41 twenty three 35 twenty four 20 Proportion B of integral value of luminescence spectrum (%) 11.44 8.48 10.25 8.55 8.45 Full amplitude at half peak of luminescence peak (nm) 46 48 44 44 42

表3（關於表4亦同樣如此）中所示的成分的簡稱的詳細情況為如下所述。 〔1〕有機配位體（Ga）：油酸 〔2〕發光性有機化合物（B-1）：與實施例1等中所使用的發光性有機化合物（B-1）相同。 〔3〕發光性有機化合物（B-3）：以50/45/5的莫耳比含有所述構成單元M3、構成單元M2以及構成單元M4的發光性有機聚合物（固體成分100%）。參考日本專利特開2008-133346號公報的合成例1中所記載的方法來製造。發光性有機化合物（B-3）的聚苯乙烯換算的重量平均分子量Mw為1.9×10 5，數量平均分子量Mn為7.5×10 4。另外，對發光性有機化合物（B-3）的發光光譜進行測定，結果具有極大波長為480 nm的發光波峰，對吸光光譜進行測定，結果具有極大波長為395 nm的吸光波峰。 〔4〕發光性有機化合物（B-4）：以50/22.5/22.5/5的莫耳比含有所述構成單元M1、構成單元M2、構成單元M3以及構成單元M4的發光性有機聚合物（固體成分100%）。參考日本專利特開2008-133346號公報的合成例1中所記載的方法來製造。發光性有機化合物（B-4）的聚苯乙烯換算的重量平均分子量Mw為7.2×10 5，數量平均分子量Mn為1.9×10 5。另外，對發光性有機化合物（B-4）的發光光譜進行測定，結果具有極大波長為470 nm的發光波峰，對吸光光譜進行測定，結果具有極大波長為385 nm的吸光波峰。 〔5〕發光性有機化合物（B-5）：以50/35/10/5的莫耳比含有所述構成單元M1、構成單元M3、構成單元M5以及構成單元M6的發光性有機聚合物（固體成分100%）。參考日本專利特開2008-133346號公報的合成例1中所記載的方法來製造。發光性有機化合物（B-5）的聚苯乙烯換算的重量平均分子量Mw為3.4×10 5，數量平均分子量Mn為1.5×10 5。另外，對發光性有機化合物（B-5）的發光光譜進行測定，結果具有極大波長為445 nm的發光波峰，對吸光光譜進行測定，結果具有極大波長為390 nm的吸光波峰。 〔6〕溶劑（J-2）：二甲苯 〔7〕溶劑（J-3）：苯甲醚 The details of the abbreviations of the components shown in Table 3 (the same applies to Table 4) are as follows. [1] Organic ligand (Ga): oleic acid [2] Light-emitting organic compound (B-1): the same light-emitting organic compound (B-1) used in Example 1 and the like. [3] Light-emitting organic compound (B-3): a light-emitting organic polymer (solid content: 100%) containing the constituent unit M3, the constituent unit M2, and the constituent unit M4 at a molar ratio of 50/45/5. It was produced with reference to the method described in Synthesis Example 1 of JP-A-2008-133346. The polystyrene-equivalent weight average molecular weight Mw of the light-emitting organic compound (B-3) was 1.9×10 5 , and the number average molecular weight Mn was 7.5×10 4 . In addition, when the emission spectrum of the light-emitting organic compound (B-3) was measured, it had an emission peak with a maximum wavelength of 480 nm, and when its absorption spectrum was measured, it had an absorption peak with a maximum wavelength of 395 nm. [4] Light-emitting organic compound (B-4): a light-emitting organic polymer containing the above-mentioned constitutional unit M1, constitutional unit M2, constitutional unit M3, and constitutional unit M4 in a molar ratio of 50/22.5/22.5/5 ( 100% solid content). It was produced with reference to the method described in Synthesis Example 1 of JP-A-2008-133346. The polystyrene-equivalent weight average molecular weight Mw of the light-emitting organic compound (B-4) was 7.2×10 5 , and the number average molecular weight Mn was 1.9×10 5 . In addition, when the emission spectrum of the light emitting organic compound (B-4) was measured, it had an emission peak with a maximum wavelength of 470 nm, and when its absorption spectrum was measured, it had an absorption peak with a maximum wavelength of 385 nm. [5] Light-emitting organic compound (B-5): a light-emitting organic polymer containing the above-mentioned constitutional unit M1, constitutional unit M3, constitutional unit M5, and constitutional unit M6 in a molar ratio of 50/35/10/5 ( 100% solid content). It was produced with reference to the method described in Synthesis Example 1 of JP-A-2008-133346. The polystyrene-equivalent weight average molecular weight Mw of the light-emitting organic compound (B-5) was 3.4×10 5 , and the number average molecular weight Mn was 1.5×10 5 . In addition, when the emission spectrum of the light emitting organic compound (B-5) was measured, it had an emission peak with a maximum wavelength of 445 nm, and when its absorption spectrum was measured, it had an absorption peak with a maximum wavelength of 390 nm. [6] Solvent (J-2): Xylene [7] Solvent (J-3): Anisole

＜實施例11～實施例14、比較例4＞ （1）組成物的製備 將製造例1-4中所獲得的半導體粒子（A-2）的分散液bb'、以及表4中所示的其他成分分別以規定量混合，從而製備作為溶液的組成物。表4中的與各成分相關的數值為混合量，單位為質量份。表4中的溶劑（J-2）是指半導體粒子（A-2）的分散液bb'中所含的二甲苯。 <Example 11 to Example 14, Comparative Example 4> (1) Preparation of composition The dispersion liquid bb' of semiconductor particles (A-2) obtained in Production Example 1-4 and other components shown in Table 4 were mixed in predetermined amounts to prepare a composition as a solution. The numerical value related to each component in Table 4 is a mixing amount, and the unit is a mass part. The solvent (J-2) in Table 4 refers to xylene contained in the dispersion liquid bb' of the semiconductor particles (A-2).

（2）膜的製作、以及膜的吸光度及發光光譜的測定 除了使用所述（1）中所製備的組成物以外，與實施例7同樣地製作膜，針對該膜，與實施例7同樣地對分光放射亮度光譜及發光光譜進行測定。 與實施例7同樣地，求出根據分光放射亮度光譜求出的吸光度A（%）、根據發光光譜求出的積分值的比例B（%）、及極大波長為570 nm以上且680 nm以下的發光波峰的半峰全幅值。將結果示於表4中。 (2) Fabrication of film and measurement of film absorbance and emission spectrum A film was prepared in the same manner as in Example 7 except for using the composition prepared in (1), and the spectral radiance spectrum and emission spectrum were measured in the same manner as in Example 7 for this film. In the same manner as in Example 7, the absorbance A (%) obtained from the spectral radiance spectrum, the ratio B (%) of the integrated value obtained from the emission spectrum, and the maximum wavelength between 570 nm and 680 nm were obtained. The full amplitude at half maximum of the luminescent peak. The results are shown in Table 4.

[表4]    實施例 比較例 11 12 13 14 4 組成物 半導體粒子（A） A-2 3.4 3.4 3.4 3.4 3.4 有機配位體（G） Ga 0.6 0.6 0.6 0.6 0.6 發光性有機化合物（B） B-1 2 - - - - B-3 - 2 - - - B-4 - - 2 - - B-5 - - - 2 - 溶劑（J） J-2 4 4 4 4 4 J-3 90 90 90 90 92 膜 吸光度A （%） 39 34 47 31 20 發光光譜 積分值的比例B （%） 9.03 8.59 9.38 7.96 6.64 發光波峰 半峰全幅值 （nm） 43 42 43 43 41 [Table 4] Example comparative example 11 12 13 14 4 Composition Semiconductor particles (A) A-2 3.4 3.4 3.4 3.4 3.4 Organic Ligand (G) Ga 0.6 0.6 0.6 0.6 0.6 Luminescent organic compound (B) B-1 2 - - - - B-3 - 2 - - - B-4 - - 2 - - B-5 - - - 2 - Solvent (J) J-2 4 4 4 4 4 J-3 90 90 90 90 92 membrane Absorbance A (%) 39 34 47 31 20 Proportion of luminescence spectrum integral value B (%) 9.03 8.59 9.38 7.96 6.64 Luminous peak half-maximum full amplitude (nm) 43 42 43 43 41

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Claims (9)

一種組成物，包含：發光性無機半導體粒子（A）以及發光性有機化合物（B）。A composition comprising: luminescent inorganic semiconductor particles (A) and a luminescent organic compound (B). 如請求項1所述的組成物，其中所述發光性無機半導體粒子（A）於其發光光譜中具有極大波長為480 nm以上且560 nm以下或者570 nm以上且680 nm以下的發光波峰。The composition according to claim 1, wherein the luminescent inorganic semiconductor particle (A) has a luminescence peak with a maximum wavelength of 480 nm to 560 nm or 570 nm to 680 nm in its luminescence spectrum. 如請求項1所述的組成物，其中所述發光性有機化合物（B）於其吸光光譜中具有極大波長為350 nm以上且550 nm以下的吸光波峰。The composition according to claim 1, wherein the light-emitting organic compound (B) has an absorption peak with a maximum wavelength of not less than 350 nm and not more than 550 nm in its absorption spectrum. 如請求項1所述的組成物，更包含光散射劑（C）。The composition according to claim 1, further comprising a light scattering agent (C). 如請求項1所述的組成物，更包含樹脂（D）。The composition according to claim 1, further comprising a resin (D). 如請求項1所述的組成物，更包含聚合性化合物（E）及聚合起始劑（F）。The composition according to claim 1, further comprising a polymerizable compound (E) and a polymerization initiator (F). 一種膜，由如請求項1至6中任一項所述的組成物所形成。A film formed from the composition according to any one of claims 1 to 6. 如請求項7所述的膜，其中所述膜於其發光光譜中具有極大波長為480 nm以上且560 nm以下或者570 nm以上且680 nm以下的發光波峰， 所述發光波峰的半峰全幅值為50 nm以下。 The film according to claim 7, wherein the film has a luminescence peak with a maximum wavelength of 480 nm to 560 nm or 570 nm to 680 nm in its luminescence spectrum, The half-maximum full amplitude of the luminescence peak is below 50 nm. 一種顯示裝置，包括如請求項7所述的膜。A display device comprising the film as claimed in claim 7.
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