TW202306917A - 氧化矽玻璃構件及其製造方法 - Google Patents

氧化矽玻璃構件及其製造方法 Download PDF

Info

Publication number
TW202306917A
TW202306917A TW111112902A TW111112902A TW202306917A TW 202306917 A TW202306917 A TW 202306917A TW 111112902 A TW111112902 A TW 111112902A TW 111112902 A TW111112902 A TW 111112902A TW 202306917 A TW202306917 A TW 202306917A
Authority
TW
Taiwan
Prior art keywords
glass member
bubbles
silica
silica glass
silicon oxide
Prior art date
Application number
TW111112902A
Other languages
English (en)
Chinese (zh)
Inventor
佐佐木寿弥
Original Assignee
日商Ａｇｃ股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商Ａｇｃ股份有限公司 filed Critical 日商Ａｇｃ股份有限公司
Publication of TW202306917A publication Critical patent/TW202306917A/zh

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C11/00—Multi-cellular glass ; Porous or hollow glass or glass particles
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/06—Glass compositions containing silica with more than 90% silica by weight, e.g. quartz
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B19/00—Other methods of shaping glass
    • C03B19/10—Forming beads
    • C03B19/1005—Forming solid beads
    • C03B19/106—Forming solid beads by chemical vapour deposition; by liquid phase reaction
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B19/00—Other methods of shaping glass
    • C03B19/14—Other methods of shaping glass by gas- or vapour- phase reaction processes
    • C03B19/1453—Thermal after-treatment of the shaped article, e.g. dehydrating, consolidating, sintering
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B20/00—Processes specially adapted for the production of quartz or fused silica articles, not otherwise provided for
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B32/00—Thermal after-treatment of glass products not provided for in groups C03B19/00, C03B25/00 - C03B31/00 or C03B37/00, e.g. crystallisation, eliminating gas inclusions or other impurities; Hot-pressing vitrified, non-porous, shaped glass products
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2201/00—Type of glass produced
    • C03B2201/02—Pure silica glass, e.g. pure fused quartz
    • C03B2201/03—Impurity concentration specified
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2201/00—Glass compositions
    • C03C2201/02—Pure silica glass, e.g. pure fused quartz
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2201/00—Glass compositions
    • C03C2201/80—Glass compositions containing bubbles or microbubbles, e.g. opaque quartz glass
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2203/00—Production processes
    • C03C2203/40—Gas-phase processes
    • C03C2203/42—Gas-phase processes using silicon halides as starting materials
    • C03C2203/44—Gas-phase processes using silicon halides as starting materials chlorine containing
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2203/00—Production processes
    • C03C2203/50—After-treatment
    • C03C2203/52—Heat-treatment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Geochemistry & Mineralogy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Glass Melting And Manufacturing (AREA)
  • Glass Compositions (AREA)
  • Plasma & Fusion (AREA)
TW111112902A 2021-04-07 2022-04-01 氧化矽玻璃構件及其製造方法 TW202306917A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2021065433 2021-04-07
JP2021-065433 2021-04-07
JP2021-135895 2021-08-23
JP2021135895 2021-08-23

Publications (1)

Publication Number Publication Date
TW202306917A true TW202306917A (zh) 2023-02-16

Family

ID=83546077

Family Applications (1)

Application Number Title Priority Date Filing Date
TW111112902A TW202306917A (zh) 2021-04-07 2022-04-01 氧化矽玻璃構件及其製造方法

Country Status (6)

Country Link
US (1) US20240025795A1 (https=)
JP (1) JPWO2022215663A1 (https=)
KR (1) KR20230167358A (https=)
DE (1) DE112022002001T5 (https=)
TW (1) TW202306917A (https=)
WO (1) WO2022215663A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102825674B1 (ko) 2024-05-31 2025-06-26 신에쯔 세끼에이 가부시키가이샤 성막 처리 가스 노출용 석영 유리 부재 및 이의 제조 방법

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0614480Y2 (ja) * 1988-04-26 1994-04-13 信越石英株式会社 半導体熱処理装置
JP2571181B2 (ja) * 1992-11-24 1997-01-16 日東化学工業株式会社 石英ガラス多孔質成形体およびその製造方法
JP2829227B2 (ja) * 1993-08-24 1998-11-25 信越石英株式会社 不透明石英ガラス
JP3883233B2 (ja) * 1996-07-15 2007-02-21 信越石英株式会社 石英ガラス発泡体の製造方法
JP3827828B2 (ja) * 1997-09-22 2006-09-27 東芝セラミックス株式会社 半導体ウエハ熱処理治具用の多孔質石英ガラス
JP2002362967A (ja) * 2001-06-06 2002-12-18 Koransha Co Ltd シリカガラス焼結体からなる半導体ウエハエッチング用部材とその製造方法
JP5143367B2 (ja) * 2006-03-13 2013-02-13 東ソー・クォーツ株式会社 不透明焼結体
JP2015173154A (ja) * 2014-03-11 2015-10-01 東京エレクトロン株式会社 縦型熱処理装置、縦型熱処理装置の運転方法及び記憶媒体
JP2021065433A (ja) 2019-10-23 2021-04-30 日本製紙クレシア株式会社 吸収性物品
JP2021135895A (ja) 2020-02-28 2021-09-13 三菱重工業株式会社 検知装置、検知方法、およびロボット並びにプログラム

Also Published As

Publication number Publication date
DE112022002001T5 (de) 2024-01-18
US20240025795A1 (en) 2024-01-25
KR20230167358A (ko) 2023-12-08
WO2022215663A1 (ja) 2022-10-13
JPWO2022215663A1 (https=) 2022-10-13

Similar Documents

Publication Publication Date Title
EP2687623B1 (en) Single-crystal silicon pulling silica container and manufacturing method thereof
JP5796598B2 (ja) 凹凸パターン形成方法
KR101374545B1 (ko) 실리카 분말 및 실리카 용기 그리고 그 제조방법
TW202306917A (zh) 氧化矽玻璃構件及其製造方法
TW201904893A (zh) 石英玻璃體之製備
KR20130135969A (ko) 단결정 실리콘 인상용 실리카 용기 및 그 제조방법
CN117083252A (zh) 二氧化硅玻璃部件及其制造方法
TW202239736A (zh) 氧化矽玻璃多孔質體及其製造方法
US20240407089A1 (en) Silica glass substrate
US20220411322A1 (en) Silica glass, high frequency device using silica glass, and silica glass production method
JP5066784B2 (ja) 合成石英ガラスの製造方法
JP7852630B2 (ja) シリカガラス多孔質体およびその製造方法
JP5284960B2 (ja) プラズマエッチング用石英ガラス部材
US20250388508A1 (en) Silica glass porous body and manufacturing method therefor
JP2006273659A (ja) 合成石英ガラスの製造方法及び光学部材用合成石英ガラス
JP3790029B2 (ja) ＳｉＣダミーウエハ
JP2016011252A (ja) 光学部材
JP7711579B2 (ja) Ｅｕｖリソグラフィ用基板の識別方法
JP2692446B2 (ja) Ｎ型シリコン単結晶の製造方法
KR100920885B1 (ko) 에픽텍셜 웨이퍼의 제작 방법
TW408370B (en) A method for improving the consistence of L-L capacitance of the high-density plasma enhanced chemical vapor deposition (HDP-CVD) layer