TW202216271A - Device for gas-liquid separation and layered independent recovery Capable of effectively reducing the burden of subsequent processing and avoiding the generation of toxic substances or further caused pollution - Google Patents

Abstract

This invention relates to a device for gas-liquid separation and layered independent recovery, comprising a fixed inner layer, a plurality of interlayers, a movable outer layer, and a lifting mechanism. The fixed inner layer, the interlayers, and the movable outer layer are sequentially sleeved and can be moved up and down relative to each other by means of the lifting mechanism. An independent gas space and a liquid-containing annular slot are formed between each layer. When each layer is moved upwards relative to the previous layer, the corresponding gas space and liquid-containing annular slot are opened and an independent liquid pipeline and a gas pipeline are respectively connected to the liquid-containing annular slot and the gas space. Accordingly, this invention can raise and lower each layer through the lifting mechanism to perform etching reaction of different liquid solutions and recover the liquid solution and the reacted chemical gas and chemical liquid respectively. Therefore, the burden of subsequent processing can be effectively reduced and the generation of toxic substances or further pollutions can be avoided.

Description

Gas-liquid separation and stratification independent recovery device

This creation is related to a semiconductor processing equipment, especially a device used to recover various liquids that have been used during processing and various gases generated from processing.

Liquid chemicals are often used to etch wafer substrates in semiconductor manufacturing processes. When the liquid agent contacts the wafer substrate, the liquid agent will chemically react with the material on the surface of the wafer substrate to make the desired semi-finished product; after the reaction, the reacted liquid agent and the chemical gas and chemical generated during the reaction process The liquid is recycled through the pipeline. In addition, one wafer substrate sometimes needs to be etched with a variety of different liquid chemicals.

However, in the prior art, there is only one pipeline for recovering the reacted liquid medicament and the chemical gas and chemical liquid generated during the reaction, that is to say, all different liquid medicaments use the same pipeline after etching. for recycling. In this way, the recovery of all chemical gases and chemical liquids together will not only cause the burden of subsequent processing, but may also lead to the mixing of different types of chemical liquids or chemical gases during the recycling process, thereby producing toxic substances or causing further pollution.

Therefore, the method of recovering the reacted liquid and gas in the prior art really needs to be improved.

In view of the above-mentioned shortcomings and deficiencies of the prior art, the present invention provides a gas-liquid separation and layered independent recovery device, which can separately recover different chemical liquids, and can separately recover gas and liquid, so it can effectively reduce the burden of subsequent processing. , it can also avoid the production of toxic substances or further pollution.

In order to achieve the above-mentioned creative purpose, the technical means used in this creation is to design a gas-liquid separation and layered independent recovery device, which includes: a substrate; a fixed inner layer comprising an inner layer main ring wall, the bottom edge of which is fixed on the base plate; an inner-layer liquid-containing ring wall, which is located on the radially outer side of the inner-layer main ring wall, and forms a first liquid-containing ring groove with the inner-layer main ring wall; an inner layer liquid pipeline, which penetrates the substrate and communicates with the inner side of the inner layer main ring wall; an inner layer gas pipeline, which penetrates the substrate and communicates with the inner side of the inner layer main ring wall, and the top opening of the inner layer gas pipeline is higher than the top opening of the inner layer liquid pipeline; a first interlayer comprising A first main ring wall, which can move up and down relative to the fixed inner layer, is arranged on the radially outer side of the inner layer liquid-containing ring wall; a first main ring wall is formed between the first main ring wall and the inner layer main ring wall a gas space, and the top edge of the first main ring wall is selectively close to the top edge of the inner main ring wall, thereby closing the first gas space; A first ring baffle, which is formed on the inner side of the first main ring wall, and extends downwardly toward the radial inner side of the first main ring wall until the inner edge of the first ring baffle is located in the first main ring wall. Above the liquid ring tank; a first liquid-containing ring wall, which is located on the radially outer side of the first main ring wall, and forms a second liquid-containing ring groove with the first main ring wall; a first liquid pipeline, which penetrates the base plate and communicates with the bottom of the first liquid-containing ring groove; a second interlayer comprising A second main ring wall, which can move up and down relative to the first interlayer, is arranged on the radially outer side of the first liquid containing ring wall; a first main ring wall is formed between the second main ring wall and the first main ring wall two gas spaces, and the top edge of the second main annular wall selectively closes against the top edge of the first main annular wall, thereby closing the second gas space; A second ring baffle, which is formed on the inner side of the second main ring wall, and extends downwardly toward the radial inner side of the second main ring wall until the inner edge of the second ring baffle is located on the second main ring wall. Above the liquid ring tank; a second liquid-containing ring wall, which is located radially outside the second main ring wall, and forms an outer liquid-containing ring groove with the second main ring wall; a second liquid pipeline, which can move through the base plate and communicate with the bottom of the second liquid-containing ring groove; a mobile outer layer containing An outer main ring wall, which can move up and down relative to the second interlayer, is disposed on the radially outer side of the second liquid containing ring wall; an outer gas space is formed between the outer main ring wall and the second main ring wall , and the top edge of the outer main ring wall is selectively close to the top edge of the second main ring wall, thereby closing the outer gas space; An outer ring baffle, which is formed on the inner side of the outer main ring wall and extends downwardly toward the radial inner side of the outer main ring wall until the inner edge of the outer ring baffle is located above the outer liquid-containing ring groove ; an outer layer liquid pipeline, which can move through the base plate and communicate with the bottom of the outer layer liquid-containing ring groove; A gas ring wall, the bottom edge of which is fixed on the base plate, and the top edge can be slidably close to the outer side of the outer main ring wall; a common gas is formed between the gas ring wall and the inner main ring wall space, the first interlayer, the second interlayer, and the moving outer layer are movably disposed in the common gas space, and the first gas space, the second gas space, and the outer gas space communicate with the common gas space ; a common gas pipeline, which communicates with the common gas space; an air pump, which is connected to the inner gas pipeline and the common gas pipeline; A lift mechanism is connected to the first interlayer, the second interlayer, and the moving outer layer, and can respectively control the first interlayer, the second interlayer, and the moving outer layer to move up and down.

In order to achieve the above-mentioned creative purpose, the technical means used in this creation is to design a gas-liquid separation and layered independent recovery device, which includes: a substrate; a fixed inner layer comprising an inner layer main ring wall, the bottom edge of which is fixed on the base plate; an inner-layer liquid-containing ring wall, the bottom edge of which is fixed on the base plate and located radially outside the inner-layer main ring wall, and forms an outer-layer liquid-containing ring groove with the inner layer main ring wall; an inner layer liquid pipeline, which penetrates the substrate and communicates with the inner side of the inner layer main ring wall; an inner layer gas pipeline, which penetrates the substrate and communicates with the inner side of the inner layer main ring wall, and the top opening of the inner layer gas pipeline is higher than the top opening of the inner layer liquid pipeline; a mobile outer layer containing An outer layer main ring wall, which can move up and down relative to the fixed inner layer is arranged on the radial outer side of the inner layer liquid-containing ring wall; an outer layer gas space is formed between the outer layer main ring wall and the inner layer main ring wall , and the top edge of the outer layer main ring wall is selectively close to the top edge of the inner layer main ring wall, thereby closing the outer layer gas space; an outer layer ring baffle, which is formed on the inner side of the outer layer main ring wall, and extends downward obliquely toward the radial inner side of the outer layer main ring wall until the inner edge of the outer layer ring baffle is located above the outer layer liquid-containing ring groove; an outer layer liquid pipeline, which penetrates the substrate and communicates with the bottom of the outer layer liquid-containing ring groove; A gas ring wall, the bottom edge of which is fixed on the base plate, and the top edge can be slidably close to the outer side of the outer main ring wall; a common gas is formed between the gas ring wall and the inner main ring wall a space, the movable outer layer is movably arranged in the common gas space, and the outer gas space communicates with the common gas space; a common gas pipeline, which communicates with the common gas space; an air pump, which is connected to the inner gas pipeline and the common gas pipeline; A lift mechanism is connected to the moving outer layer and can control the moving outer layer to move up and down.

The advantage of the present invention is that the inner layer liquid pipeline and the inner layer gas pipeline penetrate through the substrate and communicate with the inner side of the inner layer main ring wall, and the top opening of the inner layer gas pipeline is higher than the top opening of the inner layer liquid pipeline , so when the wafer substrate is etched inside the inner main ring wall, the reacted chemical liquid can flow to the processing system through the inner layer liquid pipeline, and the reacted chemical gas can be pumped away through the inner layer gas pipeline, And because the opening of the inner layer gas pipeline is relatively high, the reacted chemical liquid will not flow into the inner layer gas pipeline.

And, the outer layer main ring wall is movably arranged on the radially outer side of the inner layer main ring wall, the outer layer ring baffle is formed on the inner side surface of the outer layer main ring wall and extends inward and downward to the inner edge of the outer layer ring baffle is located. Above the outer liquid-containing ring groove, and the outer-layer liquid pipeline penetrates the substrate and communicates with the bottom of the outer-layer liquid-containing ring groove, so when the outer main ring wall moves upward relative to the inner main ring wall, and the wafer substrate is located on the outer main ring wall When etching is performed between the top edge of the inner layer main ring wall and the top edge of the inner layer main ring wall, the reacted chemical liquid will be thrown into the outer layer gas space, and flow along the outer side of the inner layer main ring wall to the outer layer liquid-containing ring groove Inside, or along the inner side of the outer main ring wall, it flows to the outer ring baffle and drips into the outer liquid holding ring groove from the inner edge of the outer ring baffle, and then is recovered by the outer liquid pipeline, so it will not flow to the inner layer. The layer liquid pipeline is mixed with other chemical liquids and recovered; and the reacted chemical gas can bypass the outer ring baffle and the top edge of the inner liquid-containing ring wall through the outer gas space to flow into the common gas space, and finally be pumped The pump is withdrawn and recovered via a common gas line.

In this way, the present invention can move the outer layer up and down through the lifting mechanism and adjust the position of the wafer substrate for etching, so as to carry out the etching reaction of different liquid chemicals respectively, and at the same time recover the liquid chemicals and the reacted chemical gas and chemical liquid respectively. It can effectively reduce the burden of subsequent treatment, and can also avoid the production of toxic substances or further pollution.

In addition, by adding one or more interlayers between the fixed inner layer and the movable outer layer, and making each interlayer set in the same way as the aforementioned fixed inner layer and movable outer layer, that is, the layers are sequentially movably sleeved and each The ring baffles and liquid pipelines on the first layer correspond to the liquid-receiving ring grooves formed on the previous layer, and are connected to the lifting mechanism to control the lifting and lowering respectively, so as to further increase the number of different liquid medicines that can be recovered in this creation , in order to meet the actual needs of use.

Further, in the gas-liquid separation and stratified independent recovery device, the inner main ring wall of the fixed inner layer includes an inner body section, the bottom edge of which is fixed on the base plate; an inner inclined section , which is formed on the top edge of the inner body segment and extends upwardly toward the radial inner side of the inner main ring wall; the first main ring wall of the first interlayer includes a first body segment, which can be opposed to The fixed inner layer is arranged on the radially outer side of the inner layer liquid-containing ring wall to move up and down; a first inclined section is formed on the top edge of the first main ring wall and faces the edge of the first main ring wall. The radially inner side is inclined upwardly and extended; the end of the first inclined section is selectively close to the end of the inner inclined section by the up and down movement of the first body section, thereby closing the first gas space.

Further, in the gas-liquid separation and stratification independent recovery device, wherein, the first main ring wall of the first interlayer further comprises a first sealing section, which is formed at the end of the first inclined section and faces toward the end of the first inclined section. extending downward; the first sealing segment selectively abuts against the end of the inner layer inclined segment with the radially outer side surface of the first sealing segment by the up and down movement of the first body segment, thereby closing the first gas space.

Further, in the gas-liquid separation and stratification independent recovery device, the fixed inner layer further comprises an inner-layer bottom plate, which is obliquely arranged on the radial inner side of the inner-layer main ring wall; the bottom of the inner-layer bottom plate A liquid perforation is formed at the end; the top end of the inner layer liquid pipeline abuts against the bottom surface of the inner layer bottom plate, and the top opening of the inner layer liquid pipeline is communicated with the liquid perforation; the inner layer gas pipeline penetrates through the inner layer bottom plate, and the top opening of the inner layer gas pipeline protrudes from the top surface of the inner layer bottom plate.

Further, in the gas-liquid separation and stratification independent recovery device, the fixed inner layer further comprises an inner ring baffle, which is formed on the inner side of the main ring wall of the inner layer and faces the main ring wall of the inner layer. The radial inner side of the ring wall is inclined downward; in the radial direction of the inner layer main ring wall, the inner edge of the inner layer ring baffle plate is located at the inner side of the top opening of the inner layer gas pipeline.

Further, in the gas-liquid separation and stratification independent recovery device, wherein the fixed inner layer further comprises an inner layer extending ring plate, which is formed on the inner edge of the inner layer ring baffle plate and extends downward; the The height position of the bottom edge of the inner layer extension ring plate is lower than the height position of the top opening of the inner layer gas pipeline.

Further, in the gas-liquid separation and stratification independent recovery device, the first interlayer further comprises a first extending ring plate, which is formed on the inner edge of the first ring baffle and extends downward. The height position of the bottom edge of an extension ring plate is lower than the height position of the top edge of the inner liquid-containing ring wall.

Further, in the gas-liquid separation and stratified independent recovery device, the lifting mechanism includes a first lifting sliding rod, which can move up and down through the base plate and abut against the first main ring wall. a bottom edge; a second lifting sliding rod, which can move up and down through the base plate, and abuts against the bottom edge of the second main ring wall; an outer lifting sliding rod, which can move up and down through the base plate, and abuts against the bottom edge of the outer main ring wall; a jack-up sliding seat, which is movably arranged under the first jack-up slider, the second jack-up slider, and the outer jack-up slider ; a lateral drive device that can move the jacking carriage laterally, thereby selectively making the jacking carriage abut against the first jacking slide bar, the second jacking slide bar, or the outer roof The bottom end of the lifting rod; a lifting driving device, which can push up the lifting sliding seat, thereby making the lifting sliding seat push up the first lifting sliding rod, the second lifting sliding rod, Or the outer jacking slide bar, and push up the first main ring wall and the second main ring wall by the first jacking slide bar, the second jacking slide bar, or the outer jacking slide bar , or the outer main ring wall.

Further, in the gas-liquid separation and stratification independent recovery device, the bottom edge of the first liquid-containing ring wall of the first interlayer is fixed on the bottom edge of the first main ring wall, and the first The liquid containing ring wall moves with the first main ring wall.

The technical means adopted by the present creation to achieve the predetermined creation purpose are further described below in conjunction with the drawings and preferred embodiments of the present creation.

Please refer to FIG. 1 , FIG. 2 , and FIG. 7 , the gas-liquid separation layered independent recovery device of the present invention includes a substrate 10 , a fixed inner layer 20 , a first interlayer 30 , and a second interlayer 40 in this embodiment. , a moving outer layer 50 , a gas ring wall 61 , a common gas pipeline 62 , a suction pump (not shown in the figure), and a lifting mechanism 70 .

Please further refer to FIG. 4 , FIG. 5 , and FIG. 6 , the fixed inner layer 20 includes an inner layer main ring wall 21 , an inner layer bottom plate 22 , an inner layer liquid pipeline 23 , an inner layer gas pipeline 24 , an inner layer Layer ring baffle 25 , an inner layer extending ring plate 26 , and an inner layer liquid containing ring wall 27 .

The bottom edge of the inner layer main ring wall 21 is fixed on the substrate 10 . Specifically, the inner main ring wall 21 includes an inner body section 211 and an inner inclined section 212 in this embodiment. The bottom edge of the inner layer body section 211 is fixed on the substrate 10 , and may extend vertically upwards perpendicular to the substrate 10 . The inner layer inclined section 212 is formed on the top edge of the inner layer body section 211 and extends upwardly inclined towards the radial inner side of the inner layer main ring wall 21 . The inner layer inclined section 212 can make the inner layer main ring wall 21 closer to the wafer substrate 10 being processed, which is more convenient to receive liquid and facilitate the flow of liquid. However, in other embodiments, the inner layer inclined section 212 is not necessarily required.

The inner bottom plate 22 is obliquely disposed on the radial inner side of the inner main ring wall 21 , and a liquid through hole 221 is formed at the bottom end (ie, the lowest inclined position) of the inner bottom bottom plate 22 . The inner layer liquid pipeline 23 penetrates through the substrate 10 and communicates with the inner side of the inner layer main ring wall 21 . Specifically, in this embodiment, the top end of the inner layer liquid pipeline 23 abuts against the bottom surface of the inner layer bottom plate 22 , and the top end opening of the inner layer liquid pipeline 23 communicates with the liquid through hole 221 . The inner layer gas pipeline 24 penetrates through the substrate 10 and communicates with the inner side of the inner layer main ring wall 21 . Specifically, in this embodiment, the inner layer gas pipeline 24 penetrates through the inner layer bottom plate 22 , and the top opening of the inner layer gas pipeline 24 protrudes from the top surface of the inner layer bottom plate 22 , that is, the inner layer gas pipeline 24 After penetrating through the inner bottom plate 22, its top end continues to extend upward for a distance, so that the opening at the top end does not adjoin the inner layer bottom plate 22, so that when the liquid flows from a high place to a low place along the inner layer bottom plate 22, the liquid does not into the inner layer gas pipeline 24 .

The above-mentioned relative matching relationship between the inner layer bottom plate 22 and the inner layer liquid pipeline 23 and the inner layer gas pipeline 24 can facilitate the liquid flow and facilitate the recovery of the liquid, and can prevent the liquid from flowing into the inner layer gas pipeline along the inner layer bottom plate 22. 24, but in other embodiments, the inner bottom plate 22 is not necessarily required, only the inner layer liquid pipeline 23 and the inner layer gas pipeline 24 need to penetrate the substrate 10 and communicate with the inner side of the inner layer main ring wall 21, and the inner layer The top opening of the layer gas pipeline 24 may be higher than the top opening of the inner layer liquid pipeline 23 .

The inner layer ring baffle 25 is formed on the inner side surface of the inner layer main ring wall 21 , and extends downward obliquely toward the radial inner side of the inner layer main ring wall 21 . In the radial direction of the inner layer main ring wall 21 , the inner edge of the inner layer ring baffle plate 25 is located inside the top opening of the inner layer gas pipeline 24 . Therefore, when the wafer substrate 10 is etched on the inner ring baffle 25, the liquid can be thrown to the inner side of the inner main ring wall 21 and flow along the inner ring baffle 25 to the inner ring baffle 25. The inner edge of 25 is lowered to the inner bottom plate 22. In other words, the inner ring baffle 25 can block the top opening of the inner gas pipeline 24, so as to prevent the liquid from being directly thrown into the inner gas pipeline from the wafer substrate 10. The top of 24 is open.

The inner layer extension ring plate 26 is formed on the inner edge of the inner layer ring baffle plate 25 and extends downward. The height position of the bottom edge of the inner layer extension ring plate 26 is lower than the height position of the top opening of the inner layer gas pipeline 24, so that the liquid flowing along the inner layer ring baffle 25 to the inner layer extension ring plate 26 can flow along the inner layer. The inner layer extension ring plate 26 is lowered to the inner layer bottom plate 22 , thereby preventing the liquid from flowing along the bottom surface of the inner layer ring baffle 25 and dripping into the top opening of the inner layer gas pipeline 24 .

The relative matching relationship between the inner layer ring baffle 25 and the inner layer extension ring plate 26 and the inner layer gas pipeline 24 can further ensure that the liquid will not flow into the inner layer gas pipeline 24, but in other embodiments There may also be no inner ring baffle 25 or inner extension ring plate 26, or both.

The inner layer liquid-containing ring wall 27 is located radially outside the inner layer main ring wall 21 , and a first liquid-containing ring groove 81 is formed between the inner layer main ring wall 21 . Specifically, the inner liquid-containing ring wall 27 , the substrate 10 , and the inner main ring wall 21 are connected to form a U-shaped annular groove with only the upper opening to collect the liquid at the bottom of the groove.

7 and 8, the first interlayer 30 includes a first main ring wall 31, a first liquid pipeline 32, a first ring baffle 33, a first extension ring plate 34, and a first Liquid-containing ring wall 35.

The first main ring wall 31 is arranged on the radially outer side of the inner layer liquid-containing ring wall 27 so as to be movable up and down relative to the fixed inner layer 20 , and a first main ring wall 31 and the inner layer main ring wall 21 are formed between the first main ring wall 31 and the inner layer. Gas space 82 . Specifically, in this embodiment, the first main ring wall 31 includes a first body segment 311 , a first inclined segment 312 , and a first sealing segment 313 .

The first body section 311 is disposed on the radially outer side of the inner layer liquid-receiving ring wall 27 to move up and down relative to the fixed inner layer 20 , and is perpendicular to the substrate 10 and can move away from the substrate 10 (upward). The first inclined section 312 is formed on the top edge of the first main ring wall 31 and extends upwardly inclined toward the radial inner side of the first main ring wall 31 . The first sealing section 313 is formed at the end of the first inclined section 312 and extends vertically downward into a ring wall shape. The first sealing section 313 is selectively abutted against the end of the inner layer inclined section 212 with the radially outer surface of the first sealing section 313 by the up and down movement of the first body section 311 , thereby sealing the first gas space 82.

However, the specific structure of the first main ring wall 31 is not limited to the above in other embodiments. For example, there may be no first sealing section 313 . In this case, the end of the first inclined section 312 may be connected by the upper and lower parts of the first body section 311 . Move and selectively close to the end of the inclined section 212 of the inner layer; or there is no first inclined section 312 but the top edge of the first main ring wall 31 (the top edge of the first body section 311 ) can selectively close It fits with the top edge of the inner main ring wall 21 (the top edge of the inner body section 211 ), thereby also closing the first gas space 82 .

The first liquid pipeline 32 penetrates through the substrate 10 and communicates with the bottom of the first liquid containing ring groove 81 . Specifically, the first liquid pipeline 32 has a through hole formed on the bottom of the bottom of the first liquid-containing ring groove 81, whereby the liquid that should be collected at the bottom of the U-shaped first liquid-containing ring groove 81 will It flows into the first liquid pipeline 32 through the through hole at the bottom.

The first ring baffle 33 is formed on the inner side of the first main ring wall 31, and extends downwardly toward the radial inner side of the first main ring wall 31 until the inner edge of the first ring baffle 33 is located in the first liquid-storage ring. Above slot 81. In other words, in the radial direction of the first main annular wall 31 , the inner edge of the first annular baffle 33 is located on the inner side compared to the inner liquid-receiving annular wall 27 , so that the liquid can pass through the first annular baffle 33 reliably. The inner edge of the droplet drops into the first liquid-containing ring groove 81 without dripping out of the first liquid-containing ring groove 81 .

The first extension ring plate 34 is formed on the inner edge of the first ring baffle 33 and extends downward. The height of the bottom edge of the first extension ring plate 34 is lower than that of the top edge of the inner liquid-containing ring wall 27 . That is to say, the bottom edge of the first extension ring plate 34 extends downward to be located in the first liquid-containing ring groove 81, and when the first main ring wall 31 moves upward relative to the inner liquid-containing ring wall 27 to the apex In this way, the liquid can be prevented from flowing from the inner edge of the first annular baffle 33 along the bottom surface of the first annular baffle 33 and dripping to the outside of the first liquid-containing annular groove 81 .

The first extension ring plate 34 can ensure that the liquid is indeed recovered through the first liquid holding ring groove 81 and the first liquid pipeline 32 without leakage. To achieve this purpose, "the inner edge of the first ring baffle 33 is located above the first liquid-containing ring groove 81".

The first liquid-receiving ring wall 35 is located radially outside the first main ring wall 31 , and a second liquid-receiving ring groove 83 is formed between the first main ring wall 31 and the first main ring wall 31 . Specifically, in this embodiment, the bottom edge of the first liquid-containing annular wall 35 is connected and fixed to the bottom edge of the first main annular wall 31 through a ring plate, and the first liquid-containing annular wall 35 follows the first main annular wall 35. The ring wall 31 moves. That is to say, the first liquid-containing annular wall 35, the annular plate, and the first main annular wall 31 are connected to form a U-shaped annular groove.

Please further refer to FIG. 9 and FIG. 10 , the second interlayer 40 includes a second main annular wall 41 , a second annular baffle 42 , a second liquid-containing annular wall 43 , and a second liquid pipeline 44 .

The second main ring wall 41 is disposed on the radially outer side of the first liquid containing ring wall 35 so as to be movable up and down relative to the first interlayer 30 . A second gas space 84 is formed between the second main annular wall 41 and the first main annular wall 31 , and the top edge of the second main annular wall 41 is selectively adhered to the top edge of the first main annular wall 31 . This closes the second gas space 84 . The second ring baffle 42 is formed on the inner side of the second main ring wall 41 , and extends obliquely downward toward the radial inner side of the second main ring wall 41 until the inner edge of the second ring baffle 42 is located in the second liquid containing ring Above slot 83. The second liquid-receiving ring wall 43 is located radially outside the second main ring wall 41 , and an outer liquid-receiving ring groove 85 is formed between the second main ring wall 41 and the second main ring wall 41 . The second liquid pipeline 44 can move through the substrate 10 and communicate with the bottom of the second liquid-receiving ring groove 83 . Specifically, the second liquid pipeline 44 movably penetrates through the base plate 10 and then passes through and is fixed on the annular plate connecting the first main annular wall 31 and the first liquid-containing annular wall 35 , and on the annular plate A through hole is formed, that is to say, the second liquid pipeline 44 actually moves up and down relative to the substrate 10 along with the first main ring wall 31 . In addition, the rest of the detailed structure of the second interlayer 40 is exactly the same as that of the first interlayer 30, the only difference is that the first interlayer 30 corresponds to the fixed inner layer 20 in the radial direction and corresponds to the second interlayer 40 outward, while The second interlayer 40 is inwardly corresponding to the first interlayer 30 and outwardly corresponding to the mobile outer layer 50 in the radial direction.

Please refer to FIG. 11 and FIG. 12 further, the mobile outer layer 50 includes an outer main ring wall 51 , an outer ring baffle 52 , and an outer liquid pipeline 53 .

The outer main ring wall 51 is disposed on the radially outer side of the second liquid containing ring wall 43 so as to be able to move up and down relative to the second interlayer 40 . An outer gas space 86 is formed between the outer main annular wall 51 and the second main annular wall 41 , and the top edge of the outer main annular wall 51 is selectively close to the top edge of the second main annular wall 41 , thereby sealing the outer layer Gas space 86. The outer ring baffle 52 is formed on the inner side of the outer main ring wall 51 , and extends obliquely downward toward the radial inner side of the outer main ring wall 51 until the inner edge of the outer ring baffle 52 is located above the outer liquid-containing ring groove 85 . The outer layer liquid pipeline 53 can move through the substrate 10 and is communicated with the bottom of the outer layer liquid containing ring groove 85 . The rest of the detailed structure of the mobile outer layer 50 is exactly the same as that of the second interlayer 40, the only difference is that the mobile outer layer 50 does not have a liquid-containing ring wall (because it is no longer necessary to form a liquid-containing ring groove outward), and the second interlayer 40 is in the radial direction. The upper is inward corresponding to the first interlayer 30 and outward corresponding to the moving outer layer 50, and the moving outer layer 50 is inward corresponding to the second interlayer 40 in the radial direction and outwards The outer surface of the outer layer main ring wall 51 is dense. Fitted to the gas ring wall 61 .

Please further refer to FIG. 4 and FIG. 8 , the bottom edge of the gas ring wall 61 is fixed on the substrate 10 , and the top edge can be relatively slidably close to the outer surface of the outer main ring wall 51 . A common gas space 611 is formed between the gas ring wall 61 and the inner main ring wall 21. The first interlayer 30, the second interlayer 40, and the mobile outer layer 50 are movably disposed in the common gas space 611, and the first gas space 82 , the second gas space 84 , and the outer gas space 86 communicate with the common gas space 611 . The common gas line 62 communicates with the common gas space 611 . The air pump is connected to the inner gas pipeline 24 and the common gas pipeline 62 .

Please further refer to FIG. 3 , FIG. 7 , FIG. 9 , and FIG. 10 . The lifting mechanism 70 is connected to the first interlayer 30 , the second interlayer 40 , and the moving outer layer 50 , and can respectively control the first interlayer 30 , the second interlayer 40 , and the moving outer layer 50 to move up and down. The lift mechanism 70 includes a first lift rod 71 , a second lift rod 72 , an outer lift rod 73 , a lift seat 74 , a lateral drive device 75 , and a lift drive device 76 .

The first lifting sliding rod 71 can move up and down through the base plate 10 and abuts against the bottom edge of the first main ring wall 31 . The second lifting sliding rod 72 can move up and down through the base plate 10 and abuts against the bottom edge of the second main ring wall 41 . The outer lifting slide bar 73 can move up and down through the base plate 10 and abuts against the bottom edge of the outer main ring wall. The jacking slide 74 is movably disposed below the first jacking slide bar 71 , the second jacking slide bar 72 , and the outer layer jacking slide bar 73 . The lateral driving device 75 can move the jacking carriage 74 laterally, thereby selectively making the jacking carriage 74 abut against the first jacking carriage 71 , the second jacking carriage 72 , or the outer jacking carriage 73 bottom end. The lift driving device 76 can push the jacking slide 74 upward, so that the jacking slide 74 pushes the first jacking rod 71, the second jacking slide 72, or the outer jacking slide 73 upward, and The first main annular wall 31 , the second main annular wall 41 , or the outer main annular wall 51 are pushed upward by the first lifting sliding rod 71 , the second lifting sliding rod 72 , or the outer layer lifting sliding rod 73 .

With the cooperation of the above elements, if the lateral drive device 75 makes the jacking slide 74 abut against the outer jacking slide bar 73 but not the second jacking slide bar 72 and the first jacking slide bar 71, then when When the lift driving device 76 pushes the jacking slide 74 upward, the jacking slide 74 pushes the outer lifting sliding rod 73 upward and the outer lifting sliding rod 73 pushes the outer main ring wall 51 upward, thereby making the outer layer main ring wall 51 push upward. The ring wall 51 rises upward relative to the second interlayer 40 , the first interlayer 30 , and the fixed inner layer 20 ; the lifting and lowering methods of the second interlayer 40 and the first interlayer 30 are also the same.

In addition, the lateral drive device 75 and the lift drive device 76 are pneumatic cylinders in this embodiment, but may also be servo motors or other devices with the same function in other embodiments. Furthermore, in this embodiment, there are two sets of identical lifting devices, which are arranged relative to the axis of each ring wall, and the two lateral driving devices 75 are opened and closed synchronously, and the two lifting driving devices 76 are simultaneously lifted up.

In the present invention, the number of interlayers can be adjusted according to requirements, that is to say, an additional third interlayer and a fourth interlayer can be provided between the second interlayer 40 and the mobile outer layer 50 , and the radially inner and outer connection and matching relationship is the same as that of the first interlayer 30 With the second interlayer 40, the present invention can recover five different liquids and gases respectively; or there can be no first interlayer 30 and second interlayer 40 but only the fixed inner layer 20 and the mobile outer layer 50, so then This creation can respectively recover two different liquids and gases.

Referring to FIGS. 5 and 6 , when the lifting mechanism 70 is not activated and the wafer substrate 10 is etched in the fixed inner ring, the reacted chemical liquid will follow the inner main ring wall 21 and the inner ring baffle 25 in sequence. , and the inner layer extension ring plate 26, and drip onto the inner layer bottom plate 22, and then flow along the inner layer bottom plate 22 to the lower liquid perforation 221 to be recovered by the inner layer liquid pipeline 23, as shown in FIG. 5 ; And the reacted gas will bypass the inner layer ring baffle 25 and the inner layer extension ring plate 26 and be recovered by the pumping pump through the inner layer gas pipeline 24, as shown in FIG. 6 .

Referring to FIGS. 7 and 8 , when the jacking slide 74 of the lifting mechanism 70 abuts against the bottom ends of the first jacking slider 71 , the second jacking slider 72 , and the outer jacking slider 73 , the lifter lifts up and down. After the driving device 76 pushes the jacking slide 74 upward, the jacking slide 74 will be pushed upward via the first jacking slide bar 71 , the second jacking slide bar 72 , and the outer jacking slide bar 73 to move the first lift. The main ring wall 31 , the second main ring wall 41 , and the outer layer main ring wall 51 move up together and separate from the fixed inner layer 20 .

At this time, the top edge of the first main ring wall 31 and the top edge of the inner layer main ring wall 21 are separated from each other and the first gas space 82 is opened, and the first gas space 82 is communicated with the common gas through the first liquid containing ring groove 81 The space 611, through which the air pump can extract and recover the reacted chemical gas in the first gas space 82, that is to say, the chemical gas will flow around the first extension ring plate 34 and the inner liquid-containing ring wall 27 in sequence into the common gas space 611 to be extracted.

In addition, if the wafer substrate 10 is moved to a position corresponding to the peripheral edge between the top edge of the first main ring wall 31 and the top edge of the inner layer main ring wall 21 , the reacted chemical can be removed when the wafer substrate 10 is rotated. The liquid is thrown into the first gas space 82 , so that the chemical liquid will follow the inner inclined section 212 and the inner body section 211 of the inner main ring wall 21 in sequence, or along the first main ring wall 31 in sequence The inner side of the first ring baffle 33 , and the inner side of the first extension ring plate 34 flow and drop into the first liquid-containing ring groove 81 , and then can be recovered by the first liquid pipeline 32 .

Referring to FIGS. 9 and 10 , when the lateral drive device 75 of the lifting mechanism 70 moves the jacking slide 74 to abut against the bottom ends of the second jacking slide bar 72 and the outer jacking slide bar 73 , but not against When the first jacking slide bar 71 is lifted, after the lift driving device 76 pushes the jacking slide 74 upward, the jacking slide 74 will be pushed upward and moved via the second jacking slide bar 72 and the outer jacking slide bar 73 . The second main ring wall 41 and the outer layer main ring wall 51 move up together and separate from the first interlayer 30 and the fixed inner layer 20; and at this time, since the first lifting slide bar 71 is not pushed up, the first A main ring wall 31 will remain stationary.

At this time, the top edge of the second main ring wall 41 and the top edge of the first main ring wall 31 are separated from each other and the second gas space 84 is opened, and the second gas space 84 is communicated with the common gas through the second liquid containing ring groove 83 The space 611, through which the air pump can extract and recover the reacted chemical gas in the second gas space 84, that is to say, the chemical gas will bypass the second extension ring plate and the first liquid-containing ring wall 35 in sequence and flow to the space 611. Extracted from the common gas space 611 .

In addition, if the wafer substrate 10 is moved to a position corresponding to the peripheral edge between the top edge of the second main ring wall 41 and the top edge of the first main ring wall 31 at this time, the reacted chemical can be removed when the wafer substrate 10 is rotated. The liquid is thrown into the second gas space 84 , so that the chemical liquid will follow the first inclined section 312 and the first body section 311 of the first main ring wall 31 in sequence, or along the second main ring wall 41 in sequence The inner side of the second ring baffle 42 , and the inner side of the second extension ring plate flow and drop into the second liquid containing ring groove 83 , and then can be recovered by the second liquid pipeline 44 .

Please refer to FIGS. 11 and 12 , when the lateral drive device 75 of the lifting mechanism 70 moves the jacking slide 74 to abut against the bottom end of the outer jacking slide bar 73 , but not against the second jacking slide bar 72 When the first jacking slide bar 71 is reached, after the lift driving device 76 pushes the jacking slide 74 upwards, the jacking slide 74 will push up the main ring wall of the outer layer 50 through the outer lifting slide bar 73 to make it move upward. Move upward and separate from the second interlayer 40, the first interlayer 30, and the fixed inner layer 20; and at this time, since the second lift rod 72 and the first lift rod 71 are not pushed up, the second main ring The wall 41 and the first main ring wall 31 will remain stationary.

At this time, the top edge of the outer layer main ring wall 51 and the top edge of the second main ring wall 41 are separated from each other and the outer layer gas space 86 is opened, and the outer layer gas space 86 is communicated with the common gas space 611 through the outer layer liquid containing ring groove 85. The air pump can extract and recover the reacted chemical gas in the outer gas space 86 , that is to say, the chemical gas will bypass the outer extension ring plate and the second liquid-containing ring wall 43 in sequence and flow into the common gas space 611 to be Extract.

In addition, if the wafer substrate 10 is moved to a position corresponding to the peripheral edge between the top edge of the outer main ring wall 51 and the top edge of the second main ring wall 41, the reacted chemical liquid can be removed when the wafer substrate 10 is rotated. Throw it into the outer gas space 86, so that the chemical liquid will follow the second inclined section and the second body section of the second main ring wall 41 in sequence, or along the inner side and outer layer of the outer main ring wall 51 in sequence. The top surface of the ring baffle 52 and the inner side surface of the outer layer extension ring plate flow and drop into the outer layer liquid containing ring groove 85 , and then can be recovered by the outer layer liquid pipeline 53 .

The advantage of the present invention is that the inner layer liquid pipeline 23 and the inner layer gas pipeline 24 penetrate through the substrate 10 and communicate with the inner side of the inner layer main ring wall 21, and the top opening of the inner layer gas pipeline 24 is higher than the inner layer liquid pipeline The top of the pipeline 23 is open, so when the wafer substrate 10 is located inside the inner main ring wall 21 for etching, the reacted chemical liquid can flow to the processing system through the inner layer liquid pipeline 23, and the reacted chemical gas can pass through The inner layer gas pipeline 24 is drawn away, and because the opening of the inner layer gas pipeline 24 is relatively high, the reacted chemical liquid will not flow into the inner layer gas pipeline 24 .

In addition, the outer main ring wall 51 is movably disposed on the radially outer side of the inner main ring wall 21, and the outer ring baffle 52 is formed on the inner side of the outer main ring wall 51 and extends inward and downward to the outer ring baffle The inner edge of 52 is located above the outer layer liquid-containing ring groove 85, and the outer layer liquid pipeline 53 runs through the substrate 10 and is connected to the bottom of the outer layer liquid-containing ring groove 85, so when the outer layer main ring wall 51 is upward relative to the inner layer main ring wall 21 When the wafer substrate 10 is moved, and the wafer substrate 10 is etched between the top edge of the outer main ring wall 51 and the top edge of the inner main ring wall 21, the reacted chemical liquid will be thrown into the outer gas space 86, and along the The outer side of the inner layer main ring wall 21 flows into the outer layer liquid-containing ring groove 85, or flows along the inner side of the outer layer main ring wall 51 to the outer layer ring baffle 52 and drips into the outer layer from the inner edge of the outer layer ring baffle 52. In the liquid containing ring groove 85, it is recovered by the outer layer liquid pipeline 53, so it will not flow into the inner layer liquid pipeline 23 to be mixed with other chemical liquids for recovery. The reacted chemical gas can bypass the outer ring baffle 52 and the top edge of the inner liquid-containing ring wall 27 through the outer gas space 86 to flow into the common gas space 611 , and finally be pumped through the common gas pipeline 62 Take away and recycle.

In this way, the present invention can use the lifting mechanism 70 to move the outer layer 50 up and down and adjust the position of the wafer substrate 10 for etching, so as to carry out the etching reaction of different liquid chemicals and simultaneously recover the liquid chemicals and the reacted chemical gas and chemical liquid, respectively. Therefore, the burden of subsequent processing can be effectively reduced, and the generation of toxic substances or further pollution can also be avoided.

Moreover, by adding one or more interlayers between the fixed inner layer 20 and the movable outer layer 50, and each interlayer is arranged in the same way as the aforementioned fixed inner layer 20 and the movable outer layer 50, that is, the layers can be moved in sequence. The ring baffles and liquid pipelines on each layer correspond to the liquid-receiving ring grooves formed on the previous layer, and are connected to the lifting mechanism 70 to control the lifting and lowering respectively, so as to further increase the recycled content of the present invention. The quantity of different liquid medicines to meet the actual needs of use.

The above is only the preferred embodiment of the creation, and does not limit the creation in any form. Although the creation has been disclosed as above in the preferred embodiment, it is not intended to limit the creation. Those of ordinary knowledge, within the scope of the technical solution of this creation, can make some changes or modifications to equivalent embodiments of equivalent changes by using the technical content disclosed above. The technical essence of the creation Any simple modifications, equivalent changes and modifications made to the above embodiments still fall within the scope of the technical solution of the creation.

10: Substrate 20: Fixed inner layer 21: inner main ring wall 211: inner body segment 212: Inner inclined section 22: Inner bottom plate 221: Liquid Perforation 23: inner layer liquid pipeline 24: Inner gas pipeline 25: inner ring baffle 26: Inner extension ring plate 27: inner liquid-containing ring wall 30: First mezzanine 31: The first main ring wall 311: The first body segment 312: First inclined segment 313: First sealing segment 32: The first liquid line 33: The first ring baffle 34: The first extension ring plate 35: The first liquid-containing ring wall 40: Second mezzanine 41: Second main ring wall 42: Second ring baffle 43: Second liquid ring wall 44: Second liquid line 50: Move the outer layer 51: Outer main ring wall 52: Outer ring baffle 53: Outer liquid pipeline 61: Gas ring wall 611: Common Gas Space 62: Common gas line 70: Lifting mechanism 71: The first jacking slide 72: Second jacking slide 73: Outer lifting slide bar 74: jacking slide 75: Lateral drive 76: Lifting drive 81: The first liquid ring tank 82: First gas space 83: The second liquid ring tank 84: Second gas space 85: Outer liquid-storage ring groove 86: Outer Gas Space

Figure 1 is a three-dimensional appearance view of this creation. Figure 2 is a side view of this creation. Figure 3 is a partial enlargement of the lifting mechanism of the present creation. FIG. 4 is a partial enlarged view of the position of each pipeline in the present invention on the substrate. Figure 5 is a schematic diagram of the flow direction of the recovered liquid in the present invention to fix the inner layer. Figure 6 is a schematic diagram of the flow direction of the recovered gas in the fixed inner layer of the present invention. Fig. 7 is a side sectional view of the first interlayer, the second interlayer, and the moving outer layer of the present creation after moving upward. FIG. 8 is a schematic diagram of the flow direction of the recovered gas and the gas in the first interlayer of the present invention. Figure 9 is a side sectional view of the second interlayer and the moving outer layer of the present creation after moving upward. FIG. 10 is a schematic diagram of the flow direction of the recovered gas and the gas in the second interlayer of the present invention. Figure 11 is a side sectional view of the mobile outer layer of the present creation after it has been moved upward. Figure 12 is a schematic diagram of the flow of recovered gas and gas by moving the outer layer of the present creation.

20: Fixed inner layer

21: inner main ring wall

211: inner body segment

212: Inner inclined section

22: Inner bottom plate

221: Liquid Perforation

23: inner layer liquid pipeline

25: inner ring baffle

26: Inner extension ring plate

27: inner liquid-containing ring wall

Claims (10)

A gas-liquid separation and stratification independent recovery device, which comprises a substrate; a fixed inner layer comprising an inner layer main ring wall, the bottom edge of which is fixed on the base plate; an inner-layer liquid-containing ring wall, which is located on the radially outer side of the inner-layer main ring wall, and forms a first liquid-containing ring groove with the inner-layer main ring wall; an inner layer liquid pipeline, which penetrates the substrate and communicates with the inner side of the inner layer main ring wall; an inner layer gas pipeline, which penetrates the substrate and communicates with the inner side of the inner layer main ring wall, and the top opening of the inner layer gas pipeline is higher than the top opening of the inner layer liquid pipeline; a first interlayer comprising A first main ring wall, which can move up and down relative to the fixed inner layer, is arranged on the radially outer side of the inner layer liquid-containing ring wall; a first main ring wall is formed between the first main ring wall and the inner layer main ring wall a gas space, and the top edge of the first main ring wall is selectively close to the top edge of the inner main ring wall, thereby closing the first gas space; A first ring baffle, which is formed on the inner side of the first main ring wall, and extends downwardly toward the radial inner side of the first main ring wall until the inner edge of the first ring baffle is located in the first main ring wall. Above the liquid ring tank; a first liquid-containing ring wall, which is located on the radially outer side of the first main ring wall, and forms a second liquid-containing ring groove with the first main ring wall; a first liquid pipeline, which penetrates the base plate and communicates with the bottom of the first liquid-containing ring groove; a second interlayer comprising A second main ring wall, which can move up and down relative to the first interlayer, is arranged on the radially outer side of the first liquid containing ring wall; a first main ring wall is formed between the second main ring wall and the first main ring wall two gas spaces, and the top edge of the second main annular wall selectively closes against the top edge of the first main annular wall, thereby closing the second gas space; A second ring baffle, which is formed on the inner side of the second main ring wall, and extends downwardly toward the radial inner side of the second main ring wall until the inner edge of the second ring baffle is located on the second main ring wall. Above the liquid ring tank; a second liquid-containing ring wall, which is located radially outside the second main ring wall, and forms an outer liquid-containing ring groove with the second main ring wall; a second liquid pipeline, which can move through the base plate and communicate with the bottom of the second liquid-containing ring groove; a mobile outer layer containing An outer main ring wall, which can move up and down relative to the second interlayer, is disposed on the radially outer side of the second liquid containing ring wall; an outer gas space is formed between the outer main ring wall and the second main ring wall , and the top edge of the outer main ring wall is selectively close to the top edge of the second main ring wall, thereby closing the outer gas space; An outer ring baffle, which is formed on the inner side of the outer main ring wall and extends downwardly toward the radial inner side of the outer main ring wall until the inner edge of the outer ring baffle is located above the outer liquid-containing ring groove ; an outer layer liquid pipeline, which can move through the base plate and communicate with the bottom of the outer layer liquid-containing ring groove; A gas ring wall, the bottom edge of which is fixed on the base plate, and the top edge can be slidably close to the outer side of the outer main ring wall; a common gas is formed between the gas ring wall and the inner main ring wall space, the first interlayer, the second interlayer, and the moving outer layer are movably disposed in the common gas space, and the first gas space, the second gas space, and the outer gas space communicate with the common gas space ; a common gas pipeline, which communicates with the common gas space; an air pump, which is connected to the inner gas pipeline and the common gas pipeline; A lift mechanism is connected to the first interlayer, the second interlayer, and the moving outer layer, and can respectively control the first interlayer, the second interlayer, and the moving outer layer to move up and down. The gas-liquid separation and layered independent recovery device according to claim 1, wherein, The inner layer main ring wall of the fixed inner layer contains an inner body segment, the bottom edge of which is fixed on the base plate; an inner layer inclined section, which is formed on the top edge of the inner layer body section and extends upwardly inclined towards the radial inner side of the inner layer main ring wall; The first main ring wall of the first interlayer contains a first body section, which can move up and down relative to the fixed inner layer and is disposed on the radially outer side of the inner layer liquid-containing ring wall; a first inclined section, which is formed on the top edge of the first main ring wall and extends upwardly inclined towards the radial inner side of the first main ring wall; the end of the first inclined section is formed by the Move up and down to selectively close to the end of the inclined section of the inner layer, thereby closing the first gas space. The gas-liquid separation and layered independent recovery device as claimed in claim 2, wherein the first main ring wall of the first interlayer further comprises A first sealing section is formed at the end of the first inclined section and extends downward; the first sealing section is selectively moved in the radial direction of the first sealing section by the up and down movement of the first body section The outer side surface is abutted against the end of the inclined section of the inner layer, thereby closing the first gas space. The gas-liquid separation and layered independent recovery device according to any one of claims 1 to 3, wherein, The fixed inner layer further comprises an inner-layer bottom plate, which is disposed obliquely on the radial inner side of the inner-layer main ring wall; a liquid perforation is formed at the bottom end of the inner-layer bottom plate; The top end of the inner layer liquid pipeline abuts against the bottom surface of the inner layer bottom plate, and the top end opening of the inner layer liquid pipeline is communicated with the liquid perforation; The inner layer gas pipeline penetrates the inner layer bottom plate, and the top opening of the inner layer gas pipeline protrudes from the top surface of the inner layer bottom plate. The gas-liquid separation and layered independent recovery device according to any one of claims 1 to 3, wherein the fixed inner layer further comprises An inner layer ring baffle, which is formed on the inner side of the inner layer main ring wall, and extends downward obliquely toward the radial inner side of the inner layer main ring wall; in the radial direction of the inner layer main ring wall, The inner edge of the inner ring baffle is located inside the top opening of the inner gas pipeline. The gas-liquid separation and layered independent recovery device according to claim 5, wherein the fixed inner layer further comprises An inner layer extension ring plate is formed on the inner edge of the inner layer ring baffle plate and extends downward; the height position of the bottom edge of the inner layer extension ring plate is lower than the height of the top opening of the inner layer gas pipeline Location. The gas-liquid separation layered independent recovery device according to any one of claims 1 to 3, wherein the first interlayer further comprises a first extension ring plate, which is formed on the inner edge of the first ring baffle and extends downward, the height of the bottom edge of the first extension ring plate is lower than the height of the top edge of the inner liquid-containing ring wall Location. The gas-liquid separation and layered independent recovery device according to any one of claims 1 to 3, wherein the lifting mechanism comprises: a first lifting sliding rod, which can move up and down through the base plate and abuts against the bottom edge of the first main ring wall; a second lifting sliding rod, which can move up and down through the base plate and abuts against the bottom edge of the second main ring wall; an outer layer lifting slide bar, which can move up and down through the base plate and abuts against the bottom edge of the outer layer main ring wall; a jacking slide seat, which is movably disposed under the first jacking slide bar, the second jacking slide bar, and the outer layer jacking slide bar; A lateral drive device capable of laterally moving the jacking carriage, thereby selectively making the jacking carriage abut against the first jacking slide bar, the second jacking slide bar, or the outer layer jacking the bottom end of the slider; A lift driving device, which can push up the jacking slide, so as to make the jacking slide push up against the first lift bar, the second lift bar, or the outer lift bar , and push up the first main ring wall, the second main ring wall, or the outer main ring wall by the first lifting sliding rod, the second lifting sliding rod, or the outer lifting sliding rod . The gas-liquid separation and layered independent recovery device according to any one of claims 1 to 3, wherein the bottom edge of the first liquid-containing ring wall of the first interlayer is fixed on the bottom of the first main ring wall edge, and the first liquid containing ring wall moves with the first main ring wall. A gas-liquid separation and stratification independent recovery device, which comprises a substrate; a fixed inner layer comprising an inner layer main ring wall, the bottom edge of which is fixed on the base plate; an inner-layer liquid-containing ring wall, the bottom edge of which is fixed on the base plate and located radially outside the inner-layer main ring wall, and forms an outer-layer liquid-containing ring groove with the inner layer main ring wall; an inner layer liquid pipeline, which penetrates the substrate and communicates with the inner side of the inner layer main ring wall; an inner layer gas pipeline, which penetrates the substrate and communicates with the inner side of the inner layer main ring wall, and the top opening of the inner layer gas pipeline is higher than the top opening of the inner layer liquid pipeline; a mobile outer layer containing An outer layer main ring wall, which can move up and down relative to the fixed inner layer is arranged on the radial outer side of the inner layer liquid-containing ring wall; an outer layer gas space is formed between the outer layer main ring wall and the inner layer main ring wall , and the top edge of the outer layer main ring wall is selectively close to the top edge of the inner layer main ring wall, thereby closing the outer layer gas space; an outer layer ring baffle, which is formed on the inner side of the outer layer main ring wall, and extends downward obliquely toward the radial inner side of the outer layer main ring wall until the inner edge of the outer layer ring baffle is located above the outer layer liquid-containing ring groove; an outer layer liquid pipeline, which penetrates the substrate and communicates with the bottom of the outer layer liquid-containing ring groove; A gas ring wall, the bottom edge of which is fixed on the base plate, and the top edge can be slidably close to the outer side of the outer main ring wall; a common gas is formed between the gas ring wall and the inner main ring wall a space, the movable outer layer is movably arranged in the common gas space, and the outer gas space communicates with the common gas space; a common gas pipeline, which communicates with the common gas space; an air pump, which is connected to the inner gas pipeline and the common gas pipeline; A lift mechanism is connected to the moving outer layer and can control the moving outer layer to move up and down.

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