TW202143302A - Substrate processing apparatus and substrate processing method capable of suppressing non-uniformity of substrate processing applied to a substrate, while suppressing deposition of a product - Google Patents

Abstract

An object of the present invention is to suppress non-uniformity of substrate processing applied to a substrate, while suppressing deposition of a product. To achieve the object, the present invention includes a carrier platform that is disposed in a processing container for defining a carrying area of a carrying substrate; and a flow regulation wall arranged on a peripheral area to surround the carrying area of the carrier platform by providing a gap extending from one side of the carrying area to an outer circumference of the carrier platform and surrounding the carrying area. The carrier platform is structured to have the carrying area and the peripheral area that form a continuous plane, and the flow regulation wall is formed to have a planar lower surface thereof. The flow regulation wall is structured such that a height of an upper surface spaced from the peripheral area is greater than 20mm, and the spacing of the gap is more than 1mm and less than 10mm.

Description

Substrate processing device and substrate processing method

This disclosure relates to a substrate processing apparatus and a substrate processing method.

Patent Document 1 discloses a technique in which a rectifying wall is provided on a mounting table on which a substrate is mounted so as to surround the substrate, and an etching gas is retained on the exposed surface of the substrate. [Prior Technical Literature] [Patent Literature]

[Patent Document 1] JP 2013-243184 A

[Problem to be solved by the present invention]

The present disclosure provides a technology that "suppresses the unevenness of the substrate processing performed on the substrate while suppressing the deposition of the product." [Means to solve the problem]

A substrate processing device of one aspect of the present disclosure has a processing container, a mounting table, and a rectifying wall. The mounting table is arranged in the processing container and defines a mounting area where the substrate is mounted. The rectifying wall is arranged to surround the mounting area with a gap penetrating from the mounting area side to the outer peripheral side of the mounting table in a peripheral area surrounding the mounting area of the mounting table. [Effects of the invention]

According to the present disclosure, it is possible to suppress the unevenness of the substrate processing performed on the substrate while suppressing the deposition of the product.

Hereinafter, referring to the drawings, embodiments of the substrate processing apparatus and substrate processing method disclosed in this application will be described in detail. In addition, the disclosed substrate processing apparatus and substrate processing method are not limited by this embodiment.

In the manufacture of liquid crystal panels or semiconductor devices, substrate processing such as plasma etching is performed. For example, in plasma etching, plasma is used to etch a substrate or a thin film formed on the substrate.

However, in substrate processing, sometimes uneven substrate processing occurs near the center and the outer edge of the substrate. For example, in plasma etching, due to the loading effect, the etching rate of the peripheral area of the substrate is higher than that near the center. Therefore, using the technique of Patent Document 1, the rectifying wall is provided on the mounting table on which the substrate is mounted so as to surround the substrate, so that the gas in the processing chamber is retained on the exposed surface of the substrate, thereby making the etching rate uniform.

However, when the straightening wall is provided on the mounting table so as to surround the substrate, the products generated by the etching process adhere to the straightening wall and the deposited products may become the cause of particles. Therefore, the substrate processing apparatus must be regularly maintained to remove the deposited products. In the substrate processing device, when the product deposits on the rectifying wall faster, the maintenance cycle is shortened and the productivity is lowered. Therefore, it is expected that the unevenness of substrate processing such as etching of the substrate can be suppressed, and the deposition of products can be suppressed.

[Construction of the device] The substrate processing apparatus of the embodiment will be described. Hereinafter, a case where "a substrate processing apparatus is used as the plasma processing apparatus 10, and plasma processing such as plasma etching is performed as a substrate processing" will be described as a main example. FIG. 1 is a vertical cross-sectional view showing an example of a schematic configuration of a plasma processing apparatus 10 according to the embodiment. The plasma processing apparatus 10 of the present embodiment is configured to "generate inductively coupled plasma, and perform plasma processing such as etching processing or ashing processing, for example, on rectangular substrates such as glass substrates for FPD". Device.

The plasma processing device 10 has an airtight main body container 1 in the shape of a rectangular tube, which is made of a conductive material such as aluminum whose inner wall surface has been anodized. The main body container 1 is assembled to be disassembled and grounded by the grounding wire 1a. The main body container 1 is divided into an antenna chamber 3 and a processing chamber 4 by a dielectric wall 2. The dielectric wall 2 constitutes the top wall of the processing chamber 4. The dielectric wall 2 is made of ceramics such as _{Al 2} O _{3, quartz, etc.}

Between the side wall 3a of the antenna chamber 3 of the processing container 1 and the side wall 4a of the processing chamber 4, a support shelf 5 protruding from the inside is provided. On the supporting scaffold 5, a dielectric wall 2 is placed.

In the lower part of the dielectric wall 2, a shower head frame 11 for processing gas supply is embedded. The shower head housing 11 is provided in a cross shape, and is formed into a structure such as a beam structure that supports the dielectric wall 2 from below. In addition, the shower head frame 11 supporting the dielectric wall 2 is in a state of being suspended from the ceiling of the main body container 1 by a plurality of suspension rods (not shown). The supporting shelf 5 and the shower head frame 11 can also be covered by a dielectric member.

The shower head frame 11 is made of "a conductive material, preferably a metal, such as aluminum whose inner or outer surface is anodized in a way that does not generate pollutants." In the shower head housing 11, a gas flow path 12 extending horizontally is formed. In the gas flow path 12, a plurality of gas discharge holes 12a extending downward are communicated. On the other hand, in the center of the upper surface of the dielectric wall 2, a gas supply pipe 20 a is provided so as to communicate with the gas flow path 12. The gas supply pipe 20a penetrates from the ceiling of the main body container 1 to the outside, and is connected to a processing gas supply system 20 including a processing gas supply source, a valve system, and the like. Therefore, in the plasma processing, the processing gas supplied from the processing gas supply system 20 is supplied to the gas flow path 12 of the shower head housing 11 through the gas supply pipe 20, and flows from the gas flow path 12 formed in the shower head housing 11 The lower gas discharge hole 12a is discharged into the processing chamber 4.

In the antenna room 3, a high frequency (RF) antenna 13 is provided. The high-frequency antenna 13 is configured by arranging an antenna wire 13a made of a metal with good conductivity such as copper or aluminum in an arbitrary shape used in the past, such as a loop or a spiral. The high-frequency antenna 13 may also be a multiple antenna having a plurality of antenna units.

The terminal 13b of the antenna wire 13a is connected with a power feeding member 16 extending above the antenna chamber 3. At the upper end of the power supply member 16, a high-frequency power supply 15 is connected via a power supply line 19. In addition, a matching device 14 is provided on the power supply line 19. Furthermore, the high-frequency antenna 13 is separated from the dielectric wall 2 by a spacer 17 made of an insulating member. At the time of plasma processing, for example, high-frequency power with a frequency of 13.56 MHz is supplied from the high-frequency power supply 15 to the high-frequency antenna 13. Thereby, an induced electric field is formed in the processing chamber 4, and the processing gas supplied from the shower head frame 11 is plasma-ized by the induced electric field to generate inductively coupled plasma.

On the bottom wall 4b in the processing chamber 4, a mounting table 23 is provided so as to face the high-frequency antenna 13 with the dielectric wall 2 interposed therebetween. The mounting table 23 has a mounting surface 23a on which the rectangular substrate G is mounted. The mounting table 23 has: a conductive member 22; and an insulator member 24. The conductive member 22 is made of a conductive material such as aluminum whose surface has been anodized, and is formed in a flat plate shape. The insulator member 24 is formed to cover the peripheral portion of the lower surface from the side surface of the conductive member 22. The mounting table 23 has a conductive member 22 fixed in the processing chamber 4 via an insulator member 24. The substrate G placed on the mounting table 23 is sucked and held by an electrostatic chuck (not shown).

The mounting table 23 has a rectifying wall 60 arranged on the mounting surface 23a so as to surround the substrate G. The rectifying wall 60 is supported by a plurality of supporting members 61 (see FIG. 2) described later provided on the mounting surface 23a with an interval therebetween, and is arranged so as to provide a gap 62 between the mounting surface 23a and the mounting surface 23a.

The mounting table 23 is inserted through the bottom wall 4b of the main body container 1 and the insulator member 24, and a lift pin 50 (see FIG. 8) described later for carrying in and out of the substrate G is inserted. The lift pins 50 are driven up and down by a lift mechanism (not shown) provided outside the main body container 1 and carry out the loading and unloading of the substrate G. In addition, the mounting table 23 may be provided with a structure capable of being raised and lowered by a lifting mechanism.

The mounting table 23 is connected to a high-frequency power supply 27 for biasing via a matching device 26 via a power supply line 25. During the plasma processing, the high-frequency power supply 27 applies a high-frequency bias (high-frequency power for bias) to the mounting table. The frequency of the high-frequency bias is, for example, 3.2 MHz. The ions in the plasma generated in the processing chamber 4 are effectively introduced to the substrate G by high-frequency power for bias.

In addition, in order to control the temperature of the substrate G, a temperature control mechanism and a temperature sensor (none of which are not shown) constituted by heating means such as ceramic heaters or a refrigerant flow path are installed in the mounting table 23.

Furthermore, the mounting table 23 forms a cooling space (not shown) on the back side of the substrate G when the substrate G is mounted. In the cooling space, a gas flow path 28 _{for supplying heat transfer gas such as He or N 2 at a predetermined pressure is connected.} In this way, by supplying the heat transfer gas to the back side of the substrate G, the temperature controllability of the substrate G can be improved under vacuum.

In the center of the bottom of the bottom wall 4b of the processing chamber 4, an opening 4c is formed. The power supply line 25, the gas flow path 28, and the piping or wiring of the temperature control mechanism are led out of the main body container 1 through the opening 4c.

One of the four side walls 4a of the processing chamber 4 is provided with a loading/unloading port 29a for loading/unloading the substrate G, and a gate valve 29 for opening and closing it.

Around the mounting table 23 of the processing chamber 4, an exhaust port 30 is provided. For example, in the bottom wall 4b of the processing chamber 4, an exhaust port 30 is provided along the side surface of the mounting table 23. The exhaust port 30 is provided in the bottom wall 4b so as to be a position lower than the mounting surface 23a of the mounting table 23. As shown in FIG. The exhaust port 30 is provided with an opening baffle 30a. The opening baffle 30a is formed by a member with a plurality of slits, a mesh member, or a member with a plurality of punching holes, so that exhaust gas can pass through and the passage of plasma is suppressed.

An exhaust port 40 is connected to the exhaust port 30. The exhaust part 40 has: an exhaust pipe 31 connected to the exhaust port 30; an automatic pressure control valve (APC) 32, which controls the pressure in the processing chamber 4 by adjusting the opening and closing degree of the exhaust pipe 31 ; And the vacuum pump 33, through the exhaust pipe 31 to exhaust the inside of the processing chamber 4. Furthermore, the vacuum pump 33 exhausts the inside of the processing chamber 4, and during plasma processing, the opening and closing degree of the automatic pressure control valve (APC) 32 is adjusted to set and maintain a predetermined vacuum atmosphere in the processing chamber 4.

The plasma processing device 10 of the embodiment has a control unit 100, a user interface 101, and a memory unit 102 composed of a microprocessor (computer). The control unit 100 sends commands to various components of the plasma processing apparatus 10, such as valves, high-frequency power supply 15, high-frequency power supply 27, vacuum pump 33, and the like, and controls these components. In addition, the user interface 101 has a keyboard or a display, etc. The keyboard is used for the operator to perform input operations such as command input in order to manage the plasma processing device 10, and the display is to display the operating status of the plasma processing device 10 Visual display. The user interface 101 is connected to the control unit 100. The memory unit 102 stores control programs for realizing various processes executed in the plasma processing device 10 under the control of the control unit 100, or for executing various components of the plasma processing device 10 in response to processing conditions The processing program is the processing recipe. The storage unit 102 is connected to the control unit 100. The processing formula is the storage medium stored in the storage unit 102. The storage medium may also be a hard disk or semiconductor memory built into the computer, or it may be a portable type such as CDROM, DVD, flash memory, etc. In addition, the recipe may be appropriately transmitted from other devices, for example, via a dedicated loop. Moreover, according to the needs, according to instructions from the user interface 101, etc., any processing recipe is called from the memory unit 102 and executed by the control unit 100, whereby the plasma processing device 10 is executed under the control of the control unit 100 The desired treatment.

Next, the details of the rectification wall 60 of the embodiment will be described. FIG. 2 is a diagram showing an example of the structure of the mounting table 23 of the embodiment. In FIG. 2, it is the figure which looked at the mounting table 23 from the upper direction (shower head housing 11 side). The mounting table 23 defines a mounting area 23aa for mounting the substrate G in the vicinity of the center of the mounting surface 23a. When used in the manufacture of a liquid crystal panel, the substrate G is formed into a rectangular shape. The mounting table 23 corresponds to the substrate G, and the mounting surface 23a is formed in a rectangular shape having short sides and long sides. The placement area 23aa is provided in a rectangular shape having the same short sides and long sides as the substrate G.

The mounting table 23 is located on a peripheral area 23ab surrounding the mounting area 23aa of the mounting surface 23a, and the rectifying wall 60 is arranged so as to surround the mounting area 23aa. In this embodiment, the straightening wall 60 is composed of two short-side wall portions 70, two long-side side wall portions 71, and four corner wall portions 73. The two short-side wall portions 70 are along The placement area 23aa is arranged on the short side, the two long side wall portions 71 are arranged along the long sides of the placement area 23aa, and the four corner wall portions 73 correspond to the corners of the placement area 23aa Partially set. The short side wall portion 70, the long side side wall portion 71, and the corner wall portion 73 are supported by a plurality of cylindrical support members 61, and are arranged separately from the peripheral area 23ab. Although the supporting member 61 is not necessarily limited to a circular horizontal cross-section, it must be a shape without corners in order to avoid stagnation of the gas flow passing therethrough. In addition to a circular shape, it is preferably a shape such as an ellipse. A shape formed by a curved line with recesses.

FIG. 3 is an enlarged view schematically showing an example of the structure of the mounting table 23 of the embodiment. The placement surface 23a of the placement table 23 is provided with a placement area 23aa, and a peripheral area 23ab is provided outside the placement area 23aa. The placement surface 23a of the placement table 23 is set as a flat plane, and the placement area 23aa and the peripheral area 23ab constitute a continuous plane.

On the peripheral area 23ab of the mounting table 23, a rectifying wall 60 is arranged. The flow straightening wall 60 has a rectangular cross-sectional shape, and the upper surface 60a, the two side surfaces 60b, 60c, and the lower surface 60d are each formed substantially flat. The rectifying wall 60 is arranged by separating the support member 61 from the peripheral area 23ab. By separating the rectifying wall 60 from the peripheral region 23ab, a gap 62 is provided between the peripheral region 23ab and the rectifying wall 60 from the side of the mounting region 23aa to the outer peripheral side of the mounting table 23. In this embodiment, although the case where the gap 62 is provided on the entire circumference of the peripheral area 23ab is described as an example, the entire circumference of the gap 62 in the peripheral area 23ab is not necessarily required. For example, in order to ensure the arrangement area of other parts, the gap 62 may not exist in a part of the peripheral area 23ab.

Next, a description will be given of the processing operation when the plasma processing apparatus 10 configured as described above is used to perform plasma processing, such as plasma etching, on the substrate G.

First, in the plasma processing apparatus 10, the gate valve 29 is set in an open state. The substrate G is carried into the processing chamber 4 from the carry-in and carry-out port 29 a by a carrying mechanism (not shown), and is placed on the placing surface 23 a of the placing table 23. The plasma processing apparatus 10 fixes the substrate G on the mounting table 23 by an electrostatic chuck (not shown). Next, the plasma processing apparatus 10 supplies processing gas from the processing gas supply system 20 into the processing chamber 4 through the gas discharge hole 12 a of the shower head housing 11. In addition, the plasma processing apparatus 10 controls the pressure by the automatic pressure control valve (APC) 32, and evacuates the processing chamber 4 from the exhaust port 30 through the exhaust pipe 31 by the vacuum pump 33, thereby , To maintain the processing chamber in a pressure atmosphere of, for example, about 0.66 to 26.6 Pa.

In addition, at this time, in order to avoid the temperature rise or temperature change of the substrate G, the plasma processing apparatus 10 supplies the heat transfer gas to the cooling space on the back side of the substrate G via the gas flow path 28.

Next, the plasma processing device 10 applies a high frequency of, for example, 13.56 MHz from the high frequency power supply 15 to the high frequency antenna 13, thereby forming a uniform induced electric field in the processing chamber 4 through the dielectric wall 2. With the induced electric field formed in this way, the processing gas is plasmatized in the processing chamber 4 to generate high-density inductively coupled plasma. With this plasma, the substrate G is subjected to plasma processing, for example, a predetermined film of the substrate G is subjected to plasma etching. At the same time, the plasma processing device 10 applies high-frequency power with a frequency of 3.2 MHz from the high-frequency power supply 27 to the mounting table 23 as a high-frequency bias voltage to make the ions in the plasma generated in the processing chamber 4 It is effectively introduced to the substrate G.

Here, in the plasma processing apparatus 10 of the present embodiment, the rectifying wall 60 is provided in the peripheral area 23ab of the mounting table 23. Without the rectifying wall 60, the plasma processing apparatus 10 has a higher etching rate in the peripheral area of the substrate G than in the vicinity of the center due to the load effect. FIG. 4A is a diagram schematically showing an example of the configuration of Comparative Example 1. FIG. FIG. 4A shows a case where the rectification wall 60 is not arranged in the peripheral area 23ab of the mounting table 23 as a comparative example 1. FIG. In the plasma processing apparatus 10 of the configuration of Comparative Example 1, when plasma processing is performed on the substrate G placed on the mounting surface 23a, the processing characteristics of the plasma processing may be in the peripheral area of the substrate G. Changes. For example, in the plasma processing apparatus 10 of Comparative Example 1, when plasma processing is performed on the substrate G placed on the placement surface 23a, the processing chamber is located in the peripheral area of the substrate G with respect to the central area. The exhaust rate of the gas in the processing chamber inside 4 is high and the reaction products are quickly removed from the vicinity of the substrate G. Therefore, the proportion of unreacted reactive species (free radicals or ions that contribute to the reaction) in the plasma increasing. Therefore, the etching rate of the peripheral area of the substrate G becomes higher due to the load effect, and the uniformity of the etching in the plane of the substrate G decreases (the proportion of unevenness increases). FIG. 4B is a diagram showing an example of changes in processing characteristics in the configuration of Comparative Example 1. FIG. FIG. 4B shows the curve L1 as the processing characteristic, and the curve L1 shows the change in the etching rate (E/R) of the substrate G by plasma etching. As shown by the curve L1, the etching rate of the peripheral area of the substrate G is higher than that near the center.

When the processing characteristics of the substrate processing performed on the substrate G are different near the center and near the outer edge, the characteristics of the TFT (Thin Film Transistor) elements formed on the substrate G may change near the center and near the outer edge. For substrate processing, it is preferable that the uniformity of processing the substrate G is high. For example, it is suitable for high-resolution liquid crystal panels. The plasma etching process of processing the TAT (titanium･aluminum･titanium) film on the substrate G to form SD (source･drain) is required to be highly uniform sex. However, in the plasma etching of the TAT film, due to the load effect, the etching rate of the outer periphery in the peripheral area is higher than that in the vicinity of the center.

Therefore, for example, as in Patent Document 1, it is considered that a rectifying wall is provided on a mounting table on which the substrate is mounted so as to surround the substrate. FIG. 5A is a diagram schematically showing an example of the structure of Comparative Example 2. FIG. FIG. 5A shows a case where the rectification wall 60 is arranged in the peripheral area 23ab of the mounting table 23 as a comparative example 2. FIG. In Comparative Example 2, the straightening wall 60 is directly arranged in the peripheral region 23ab without providing the gap 62. In the plasma processing apparatus 10 of the configuration of Comparative Example 2, the rectifying wall 60 allows the gas in the processing chamber to stay on the exposed surface of the substrate G, thereby making the etching rate uniform. FIG. 5B is a diagram showing an example of changes in processing characteristics in the configuration of Comparative Example 2. FIG. FIG. 5B shows the curve L2 as the processing characteristic, and the curve L2 shows the change in the etching rate (E/R) of the substrate G by plasma etching. As shown by the curve L2, the etching rate is more uniform in the peripheral area and near the center of the substrate G than in Comparative Example 1 shown in FIG. 4B.

However, as in Comparative Example 2, when the straightening wall 60 is directly arranged in the peripheral region 23ab without providing the gap 62, the product adheres to the straightening wall 60 and gradually deposits and the deposited product may become the cause of the particles. . For example, the straightening wall 60 deposits the product on the side surface 60c or the upper surface 60a of the substrate G side by trapping the gas in the processing chamber. Therefore, the plasma processing device 10 must be regularly maintained to remove the deposited products. In the plasma processing device 10, when the product deposits on the rectifying wall 60 at a faster rate, the maintenance period becomes shorter and the productivity is lowered.

Therefore, in the plasma processing apparatus 10 of this embodiment, the peripheral region 23ab of the mounting table 23 is provided with a gap 62 penetrating from the mounting region 23aa side to the outer peripheral side of the mounting table 23 and the rectifying wall 60 is arranged. Fig. 6A is a diagram schematically showing an example of the configuration of this embodiment. When the rectifying wall 60 is arranged on the peripheral area 23ab, the gas in the processing chamber temporarily stays on the exposed surface of the substrate G by the rectifying wall 60, whereby the etching rate can be made uniform. Fig. 6B is a diagram showing an example of changes in processing characteristics in the configuration of the present embodiment. FIG. 6B shows the curve L3 as the processing characteristic, and the curve L3 shows the change in the etching rate (E/R) of the substrate G by plasma etching. As shown by the curve L3, the etching rate is more uniform in the peripheral area and the center vicinity of the substrate G than in Comparative Example 1 shown in FIG. 4B.

Moreover, in the case of the structure of this embodiment, as shown in FIG. Thereby, it is possible to prevent the product from being deposited on the straightening wall 60, and the deposition rate of the product on the side surface 60c or the upper surface 60a of the straightening wall 60 is reduced. Thereby, the plasma processing apparatus 10 of the present embodiment can increase the maintenance period for removing deposited products, and can suppress the decrease in productivity.

In this way, the plasma processing apparatus 10 of this embodiment can suppress the unevenness of the substrate processing performed on the substrate G while suppressing the deposition of the product.

The size or arrangement position of the rectifying wall 60 may be appropriately determined in accordance with the condition of the etching rate in the peripheral area of the substrate G or the condition of the deposition of the product. FIG. 7 is a diagram illustrating the size or arrangement position of the rectification wall 60 of this embodiment. In FIG. 7, the distance between the side surface 60 c on the side of the substrate G of the rectification wall 60 and the placement area 23 aa where the substrate G is placed is represented as a distance A. As shown in FIG. In addition, the height from the upper surface 60a of the rectification wall 60 to the placing surface 23a of the placing table 23 is expressed as the total height B. The distance between the lower surface 60d of the rectifying wall 60 and the gap 62 between the peripheral area 23ab is denoted as the interval C. The width of the rectifying wall 60 is expressed as a width D.

For example, the rectifying wall 60 is arranged at an interval A of 5-15 mm. In addition, the straightening wall 60 is formed with a distance C of 1-10 mm, and a total height B of 20-50 mm. In addition, the straightening wall 60 is formed with a width D of 8 mm or more. In addition, the rectifying wall 60, as shown in FIG. 7, when it is arranged on the mounting table 23, it is formed to have a relatively wide width in a flat state with no step difference between the outer side surface 60b and the side surface 23b of the mounting table 23. good. Here, for example, when the side surface 60b of the mounting table 23 is arranged on the side of the substrate G than the side surface 23b of the mounting table 23 and a step difference is provided between the side surface 60b and the side surface 23b, when the etching gas exceeds the rectifying wall 60, When being discharged to the exhaust port 30, the flow of the exhaust gas will bend at the step difference between the side surface 60b and the side surface 23b. In this case, the product is deposited on the outer edge of the mounting surface 23a of the mounting table 23 which becomes a step. In the plasma processing device 10, when the side surface 60b of the mounting table 23 and the side surface 23b of the mounting table 23 are in a flat state without a step, the flow of exhaust gas does not bend and becomes smooth, thereby suppressing generation The material is deposited on the outer edge of the placing surface 23 a of the placing table 23.

The interval A, the total height B, the interval C, and the width D are designed to appropriate values according to the size of the substrate G, etc. For example, in the plasma processing apparatus 10 of the embodiment, when the size of the substrate G is the size of the sixth generation (for example, 1500mm×1850mm), the interval A is set to 8mm, the total height B is set to 30mm, and the interval Let C be 10mm.

In the plasma processing apparatus 10 of the present embodiment, a gap 62 is provided in the peripheral area 23ab of the mounting table 23 and the rectifying wall 60 is fixedly arranged. The rectifying wall 60 must be configured so as not to interfere with other components. For example, in the processing chamber 4, at least one side wall 4a is provided with a loading/unloading port 29a for loading/unloading the substrate G. The rectification wall 60 makes the upper surface 60a a position lower than the loading/unloading port 29a so as not to interfere with the transfer mechanism of the substrate G or the arm portion that transfers the substrate G. FIG. 8 is a diagram showing a flow of transferring the substrate G to the plasma processing apparatus 10 of the embodiment. The substrate G is taken into the processing chamber 4 from the loading/unloading port 29a by the arm 90 (FIG. 8(A)). The plasma processing apparatus 10 raises the lift pin 50 of the mounting table 23, and receives the board|substrate G from the arm part 90 (FIG. 8(B)). After the arm 90 is withdrawn from the loading/unloading port 29a, the plasma processing apparatus 10 lowers the lift pins 50 and the substrate G is placed on the mounting table 23. In the plasma processing apparatus 10 of the present embodiment, the rectifying wall 60 is formed and arranged such that the upper surface 60a is lower than the position of the loading/unloading port 29a, thereby preventing the rectifying wall 60 and Interference of the substrate G or the arm 90. In more detail, at least the upper surface 60a of the rectifying wall 60 must be located at a position lower than the upper end of the loading/unloading port 29a, but as long as it does not interfere with the movement path of the arm 90, it may be higher than the loading/unloading port. The high position below 29a.

Here, when it is desired to prevent the rectification wall 60 from interfering with other members, a configuration of "providing a moving mechanism for moving the rectification wall 60 and moving the rectification wall 60 when interference occurs" is considered. For example, when the substrate G is transported, it is conceivable to provide a moving mechanism for raising and lowering the rectification wall 60 to raise the rectification wall 60 to a position where it does not interfere with the substrate G or the arm 90. However, the moving mechanism may become a source of particle generation, and it is not preferable to install it in the processing chamber 4.

On the other hand, in the present embodiment, the gap 62 is provided in the mounting table 23 and the rectifying wall 60 is fixedly arranged. This eliminates the need to provide a lifting mechanism in the processing chamber 4, and therefore, the generation of particles can be suppressed.

In addition, in the above-mentioned embodiment, a case where "a substrate processing apparatus is used as the plasma processing apparatus 10, and plasma processing such as plasma etching is performed as a substrate processing" is described as an example. However, the disclosed technology is not limited to this, and can be applied to various substrate processing such as film formation or modification using plasma. That is, the substrate processing device may be a film forming device or a reforming device that uses plasma to form a film. In addition, in the above-mentioned embodiment, although the dielectric wall 2 formed of a dielectric is provided between the antenna chamber 3 and the processing chamber 4, an inductive coupling circuit in which a metal wall is provided instead of the dielectric may be used. Pulp device.

In addition, in the above-mentioned embodiment, although the example of using a rectangular substrate for FPD as the substrate G is shown, it can also be applied to the case of processing other rectangular substrates. In addition, the substrate G is not limited to a rectangular shape, for example, it can also be applied to a circular substrate such as a semiconductor wafer.

As described above, the plasma processing apparatus 10 (substrate processing apparatus) of the present embodiment includes: the processing chamber 4 (processing container); the mounting table 23; and the rectifying wall 60. The mounting table 23 is arranged in the processing chamber 4, and defines a mounting area 23aa where the substrate G is mounted. The rectifying wall 60 is arranged to surround the placement area 23aa with a gap 62 penetrating from the placement area 23aa side to the outer peripheral side of the placement base 23 on the peripheral area 23ab surrounding the placement area 23aa of the placement base 23. Thereby, the plasma processing apparatus 10 can suppress the unevenness of the substrate processing performed on the substrate G while suppressing the deposition of the product.

In addition, the rectification wall 60 is supported by a support member 61 provided between the peripheral area 23ab and the rectification wall 60, whereby a gap 62 is provided. Thereby, the plasma processing device 10 can provide the gap 62 between the peripheral regions 23ab of the mounting table 23 and stably arrange the rectifying wall 60.

In addition, the mounting table 23 constitutes a continuous plane with the mounting area 23aa and the peripheral area 23ab. The straightening wall 60 has a flat bottom surface 60d. Thereby, the plasma processing apparatus 10 can form a gap 62 parallel to the peripheral area 23ab linearly from the placement area 23aa, and since the gas in the processing chamber smoothly passes through the gap 62, the deposition of the product can be suppressed.

In addition, the straightening wall 60 has a height between the upper surface 60a and the peripheral area 23ab of 20 mm or more, and the gap 62 has an interval of 1 mm or more and 10 mm or less. Thereby, the plasma processing apparatus 10 can suppress the unevenness of the substrate processing performed on the substrate G while suppressing the deposition of the product.

In the processing chamber 4, at least one side wall 4a is provided with a loading/unloading port 29a for loading/unloading the substrate G. The rectifying wall 60 is provided with the upper surface 60a at a position lower than the carrying-in/outlet 29a. Thereby, the plasma processing apparatus 10 can prevent the interference of the rectifying wall 60 with the substrate G or the arm portion 90 for carrying the substrate G when the substrate G is carried in and out from the carry-in and carry-out port 29a.

Although the embodiment has been described above, the embodiment disclosed this time is an example in all aspects and should not be regarded as restrictive. In fact, the above-mentioned embodiment can be realized in a variety of forms. In addition, the above-mentioned embodiment may be omitted, replaced, and changed in various forms without departing from the scope of the patent application and its intent.

For example, in the above-mentioned embodiment, the description is given as an example in which the support member 61 provided between the peripheral region 23ab and the rectifying wall 60 is provided with a gap 62 and the rectifying wall 60 is supported. However, the disclosed technology is not limited to this. The rectifying wall 60 may also be provided with a gap 62 and supported by a supporting member between the side wall 4a of the processing chamber 4 and the rectifying wall 60. For example, the rectifying wall 60 may be provided with a supporting member on the side wall 4a of the processing chamber 4, and a gap 62 may be provided from the side wall 4a through the supporting member to support the rectifying wall 60.

In addition, in the above-mentioned embodiment, the case where the gap 62 is provided on the entire circumference of the peripheral region 23ab is described as an example. However, the disclosed technology is not limited to this. The gap 62 may also be partially provided in the peripheral area 23ab of the placing surface 23a. The gap 62 only needs to be provided at least in the part where the product deposits are large. For example, when more products are deposited on any one of the short side, long side, and corner portion of the peripheral area 23ab of the placement surface 23a, the gap 62 can also be provided on any of the short side, long side, and corner portion. One. For example, by providing the gap 62 with the supporting member 61 and supporting only the short side wall portion 70, the gap 62 can be provided only on the short side. In addition, the support member 61 provides the gap 62 and only supports the long side wall portion 71, whereby the gap 62 can be provided only on the long side. In addition, the support member 61 provides the gap 62 and supports only the corner wall portion 73, whereby the gap 62 can be provided only in the corner portion. In addition, in the case where the wall portion where the gap 62 is partially provided is lightweight, although it is also considered to support the wall portion provided with the gap 62 by the adjacent wall portion, the wall portion where the gap 62 is partially provided is not lightweight. In the case of a large amount, it is preferable to support the wall portion by the support member 61 and provide a gap 62.

In addition, in the above-mentioned embodiment, the case where "the interval C of the gap 62 is fixed from the mounting area 23aa to the outer peripheral side of the mounting table 23" is described as an example. However, the disclosed technology is not limited to this. As long as the interval C of the gap 62 is 1-10 mm, the interval C is not necessarily constant. For example, the gap 62 may be set so that the interval C gradually narrows from the mounting area 23aa side to the outer peripheral side of the mounting table 23. For example, the lower surface 60d of the rectifying wall 60 may be formed to be inclined toward the outer peripheral side of the mounting table 23, and the shape of the gap 62 may be formed into a tapered shape in which the interval C gradually narrows toward the outer peripheral side of the mounting table 23. In the case of such a configuration, although a few products are easily deposited in the gap 62, the products are mainly deposited on the outer peripheral side where the gap C is narrowed, and therefore, the depositing position of the products as fine particles can be separated from the substrate G . Therefore, even in the case of such a configuration, the plasma processing apparatus 10 can increase the maintenance period for removing the deposited products, and can suppress the decrease in productivity.

In addition, I believe that the implementation form disclosed this time is an illustration in all aspects and not a limitation. In fact, the above-mentioned embodiment can be realized in a variety of forms. In addition, the above-mentioned embodiment may be omitted, replaced, and changed in various forms without departing from the scope of the patent application and its intent.

10: Plasma processing device 4: Processing room 4a: side wall 23: Mounting table 23a: Mounting surface 23aa: loading area 23ab: surrounding area 29a: Moving in and out 60: Rectifier wall 60a: above 60b, 60c: side 60d: below 61: Supporting member 62: Clearance 70: Short side wall 71: Long side wall 73: Corner Wall 90: Arm G: substrate

[Fig. 1] Fig. 1 is a vertical cross-sectional view showing an example of a schematic configuration of a plasma processing apparatus according to an embodiment. [Fig. 2] Fig. 2 is a diagram showing an example of the configuration of the mounting table of the embodiment. [Fig. 3] Fig. 3 is an enlarged view schematically showing an example of the configuration of the mounting table of the embodiment. [Fig. 4A] Fig. 4A is a diagram schematically showing an example of the configuration of Comparative Example 1. [Fig. 4B] Fig. 4B is a diagram showing an example of changes in processing characteristics in the configuration of Comparative Example 1. [Fig. 5A] Fig. 5A is a diagram schematically showing an example of the configuration of Comparative Example 2. [Fig. 5B] Fig. 5B is a diagram showing an example of changes in processing characteristics in the configuration of Comparative Example 2. [Fig. 6A] Fig. 6A is a diagram schematically showing an example of the configuration of the present embodiment. [Fig. 6B] Fig. 6B is a diagram showing an example of changes in processing characteristics in the configuration of the present embodiment. [Fig. 7] Fig. 7 is a diagram illustrating the size or arrangement position of the flow straightening wall of the present embodiment. [Fig. 8] Fig. 8 is a diagram showing a flow of transferring a substrate to the plasma processing apparatus of the embodiment.

23: Mounting table

23a: Mounting surface

23aa: loading area

23ab: surrounding area

60: Rectifier wall

60a: above

60c: side

62: Clearance

G: substrate

Claims (7)

A substrate processing device characterized by: Processing container The mounting table is arranged in the aforementioned processing container to define a mounting area for mounting the substrate; and The flow straightening wall is arranged to provide a gap penetrating from the placing area side to the outer peripheral side of the placing table in a peripheral area surrounding the placing area of the placing table and surrounding the placing area. Such as the substrate processing apparatus of claim 1, wherein: The rectifying wall is supported by a supporting member provided between the peripheral area and the rectifying wall, whereby the gap is provided. Such as the substrate processing apparatus of claim 1, wherein: The rectifying wall is supported by a supporting member provided between the side wall of the processing container and the rectifying wall, whereby the gap is provided. Such as the substrate processing apparatus of any one of claims 1 to 3, wherein: The placing table is a continuous plane formed by the placing area and the peripheral area, The aforementioned straightening wall is set flat on the bottom. Such as the substrate processing apparatus of any one of claims 1 to 4, wherein: The rectifying wall has a height of 20 mm or more from the upper surface to the peripheral area, and the interval of the gap is 1 mm or more and 10 mm or less. Such as the substrate processing apparatus of any one of claims 1 to 5, wherein: The processing container is provided with a loading and unloading port for loading and unloading the substrate on at least one side wall, The above-mentioned flow straightening wall is set on the upper surface at a position lower than the above-mentioned carrying-in/outlet. A substrate processing method that processes the aforementioned substrates by using a substrate processing apparatus having a processing container provided with a mounting table defining a mounting area for mounting a substrate. The substrate processing method is characterized by: The rectifying wall is arranged in a manner that "a gap is provided in the peripheral area surrounding the placement area of the placement base that penetrates from the placement area side to the outer peripheral side of the placement base and surrounds the placement area." The processing gas for processing the substrate is introduced into the processing container.

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