TW202016371A - 晶圓生成裝置 - Google Patents
晶圓生成裝置 Download PDFInfo
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- TW202016371A TW202016371A TW108138438A TW108138438A TW202016371A TW 202016371 A TW202016371 A TW 202016371A TW 108138438 A TW108138438 A TW 108138438A TW 108138438 A TW108138438 A TW 108138438A TW 202016371 A TW202016371 A TW 202016371A
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Abstract
[課題] 本發明的目的是提供一種晶圓生成裝置,能從晶棒自動地生成晶圓。[解決手段] 一種晶圓生成裝置,具有晶棒研削單元,將晶棒的上表面進行研削且平坦化;雷射照射單元,將對晶棒具有穿透性波長之雷射光束定位在相當於應從晶棒的上表面生成之晶圓厚度的深度,並對晶棒照射雷射光束且形成剝離層;晶圓剝離單元,從晶棒剝離出晶圓;及匣盤,具有支撐被剝離出來之晶圓的支撐部。晶圓生成裝置進一步包含:輸送帶單元,搬送被匣盤所支撐的晶棒;晶棒儲存部,容納被匣盤所支撐的晶棒;及晶棒授受單元,將被匣盤所支撐的晶棒從晶棒儲存部授受至輸送帶單元。
Description
本發明是關於一種晶圓生成裝置,用於從晶棒生成晶圓。
IC、LSI、LED等的元件是在以Si(矽)或Al2
O3
(藍寶石)等作為素材之晶圓的正面層積功能層,並藉由在此功能層上交叉之多條分割預定線所劃分而形成。此外,功率元件、LED等是在以單晶SiC(碳化矽)作為素材之晶圓的正面層積功能層,並藉由在此功能層上交叉之多條分割預定線所劃分而形成。形成有元件之晶圓藉由切割裝置、雷射加工裝置而對分割預定線施予加工且分割成各個元件晶片,被分割之各個元件晶片利用於行動電話或個人電腦等電子設備。
形成有元件之晶圓一般是藉由將圓柱形狀的晶棒以線鋸切割成很薄而生成。被切斷之晶圓正面與背面是藉由研磨而完工成為鏡面(例如參照專利文獻1)。但是,若將晶棒以線鋸切斷,並對切斷之晶圓的正面及背面進行研磨,則會有捨棄晶棒之大部分(70~80%)的情形而有所謂浪費的問題。特別是六方單晶碳化矽(SiC)晶棒,因為硬度較高,以線鋸進行切斷是困難的且需要相當長的時間,所以生產率不佳的同時,還具有晶棒的單價較高、如何有效率地生成晶圓的課題。
因此,有人提出一種技術,將對六方單晶碳化矽(SiC)具有穿透性之波長的雷射光束的聚光點定位在六方單晶碳化矽(SiC)晶棒的內部,對六方單晶碳化矽(SiC)晶棒照射雷射光束並在其切斷預定面形成剝離層,沿著形成有剝離層的切斷預定面從六方單晶碳化矽(SiC)晶棒剝離出晶圓(例如參照專利文獻2)。
[習知技術文獻]
[專利文獻]
[專利文獻1] 日本特開2000-94221號公報
[專利文獻2] 日本特開2013-49161號公報
[發明所欲解決的課題]
但是,在晶棒形成剝離層的步驟、從晶棒剝離出晶圓的步驟、及將晶棒的上表面進行研削且平坦化的步驟都是透過人工所進行,有生產效率不佳的問題。
因此,本發明的目的是提供一種晶圓生成裝置,能從晶棒自動地生成晶圓。
[解決課題的技術手段]
根據本發明,提供一種晶圓生成裝置,用於從晶棒生成晶圓,具備:晶棒研削單元,包含第一保持台及研削手段,該第一保持台用於保持晶棒,該研削手段用於將保持於該第一保持台之晶棒的上表面進行研削且平坦化;雷射照射單元,包含第二保持台及雷射照射手段,該第二保持台用於保持晶棒,該雷射照射手段用於將對晶棒具有穿透性波長之雷射光束的聚光點定位在相當於應從保持於該第二保持台之晶棒的上表面生成之晶圓厚度的深度,並對晶棒照射雷射光束且形成剝離層;晶圓剝離單元,包含第三保持台及晶圓剝離手段,該第三保持台用於保持晶棒,該晶圓剝離手段用於將保持於該第三保持台之晶棒的上表面進行保持並從剝離層剝離出晶圓;匣盤,包含晶棒支撐部及晶圓支撐部,該晶棒支撐部用於支撐晶棒,該晶圓支撐部用於支撐被剝離出來的晶圓;輸送帶單元,將被該匣盤所支撐的晶棒在該晶棒研削單元、該雷射照射單元及該晶圓剝離單元之間進行搬送;晶棒儲存部,容納該匣盤所支撐的晶棒;及晶棒授受單元,將容納於該晶棒儲存部之匣盤所支撐的晶棒授受給該輸送帶單元。
該晶棒儲存部較佳為包含載置台,載置支撐晶棒的該匣盤;第一環狀皮帶,配設於該載置台並將支撐晶棒的該匣盤進行輸送;驅動力傳遞部,與該第一環狀皮帶 連接並傳遞驅動力;及台架,可在其上下位置配置多個該載置台;而該晶棒授受單元較佳為包含接收台,接收來自該載置台之支撐有晶棒的該匣盤;第二環狀皮帶,將配設於該接收台且支撐有晶棒之該匣盤授受至該輸送帶單元;馬達,驅動該第二環狀皮帶;離合器部,與該第二環狀皮帶連接,且傳遞驅動力至該驅動力傳遞部;及升降機,將該接收台定位至多個配設上下位置之該載置台。晶圓生成裝置較佳為進一步具備:卡匣儲存部,容納有多個卡匣,該卡匣容納被剝離出來的晶圓;及容納手段,將被該匣盤之該晶圓支撐部所支撐的晶圓容納在卡匣,該卡匣是容納在該卡匣儲存部。
[發明功效]
根據本發明的晶圓生成裝置,能夠自動地進行從晶棒生成晶圓之一連串的作業,且能提高生產效率。
以下,一邊參照本發明實施方式之晶圓生成裝置的圖面一邊進行詳細的說明。
如圖1所示之晶圓生成裝置2至少由以下構件所構成:晶棒研削單元4;雷射照射單元6;晶圓剝離單元8;匣盤9,具備支撐晶棒的晶棒支撐部及支撐被剝離出來之晶圓的晶圓支撐部;輸送帶單元10,將被匣盤所支撐之晶棒在研削單元4、雷射照射單元6及晶圓剝離單元8之間進行搬送;晶棒儲存部11,容納被匣盤9所支撐之晶棒;及晶棒授受單元12,將容納於晶棒儲存部11之被匣盤9所支撐的晶棒授受至輸送帶單元10。
參照圖2進行關於晶棒研削單元4的說明。晶棒研削單元4至少由以下構件所構成:第一保持台14,保持晶棒且為圓形狀;及研削手段16,將保持於第一保持台14之晶棒的上表面進行研削且平坦化。本實施方式中的晶棒研削單元4具備基台18,為長方體狀;及旋轉台20,旋轉自如地裝配於基台18的上表面且為圓形狀。旋轉台20是藉由內置於基台18的旋轉台用馬達(未圖示),並將通過旋轉台20之徑向中心且往Z軸方向延伸的軸線作為旋轉中心而旋轉。然後,本實施方式中之第一保持台14是旋轉自如地配置一對在旋轉台20的上表面,且將旋轉台20之徑向中心(旋轉中心)作為對稱點而以點對稱的方式進行配置。第一保持台14是藉由旋轉台20的旋轉而交替定位於研削位置及晶棒裝卸位置,該研削位置是指藉由研削手段16而實施研削加工的位置(圖2中後側的位置);該晶棒裝卸位置是指用於裝卸晶棒的位置(圖2中前側的位置)。
第一保持台14是藉由裝設在旋轉台20下面之第一保持台用的馬達(未圖示),並將通過第一保持台14之徑向中心且往Z軸方向延伸的軸線作為旋轉中心而旋轉。此外,第一保持台14的上表面配置有多孔質的吸附卡盤22,該吸附卡盤22連接有吸引手段(未圖示),且在第一保持台14中,藉由以吸引手段在吸附卡盤22的上表面生成吸引力而成為將載置在吸附卡盤22之上表面的晶棒進行吸引保持的的態樣。再者,Z軸方向為圖2中箭頭Z所示的上下方向。此外,圖2中箭頭X所示的X軸方向是與Z軸方向正交的方向,圖2中箭頭Y所示的Y軸方向是與X軸方向及Z軸方向正交的方向。X軸方向及Y軸方向在規定之平面為實質上水平。
本實施方式中,如圖2所示,晶棒研削單元4的研削手段16是具備裝配在基台18上表面之門型的支撐框架24。支撐台24具有:一對支柱26,在Y軸方向上隔開間隔,且從基台18的上表面延伸至上方;橫梁28,架設在支柱26的上端之間,且在Y軸方向上延伸。一對支柱26中,主軸外殼30透過一對連接片32而移動自如(升降自如)地被支撐在Z軸方向上。於橫樑28的上表面裝配一對升降用的馬達34,用於使主軸外殼30在Z軸方向上進行移動(升降)。升降用馬達34與在支柱26內部之在Z軸方向上延伸的滾珠螺桿(未圖示)的一端部連接,滾珠螺桿的螺帽部(未圖示)則固定於連接片32。然後,升降用的馬達34的旋轉運動是藉由滾珠螺桿而轉換成直線運動並傳遞給連接片32,藉此以升降主軸外殼30。
主軸外殼30中,主軸36(參照圖3)是將在Z軸方向上延伸的軸線作為中心且旋轉自如的被支撐著,此主軸36是藉由內置在主軸外殼30之主軸用馬達(未圖示)而將在Z軸方向上延伸的軸線作為軸心旋轉。主軸36的下端固定有圓板狀的輪安裝件38,在輪安裝件38的下表面以螺栓40固定有環狀的研削輪42。在研削輪42之下表面的外周緣部固定有多個研削磨石44,該研削磨石44是在圓周方向上隔開間隔且環狀地配置。如圖3所示,在第一保持台14被定位在研削位置時,以將第一保持台14的旋轉中心通過研削磨石44的方式,讓研削輪42的旋轉中心對第一保持台14的旋轉中心進行變位。因此在研削手段16中,藉由一邊使第一保持台14與研削輪42相互旋轉,一邊使保持在第一保持台14的晶棒上表面與研削磨石44接觸,而能夠以研削磨石44將晶棒的上表面整體進行研削且平坦化。
參照圖1及圖4進行關於雷射照射單元6的說明。如圖1所示,鄰接晶棒研削單元4而配置的雷射照射單元6至少由以下構件所構成:第二保持台60,保持晶棒且呈圓形狀;及雷射照射手段62,將對晶棒具有穿透性波長之雷射光線的聚光點定位在相當於應從保持於該第二保持台60之晶棒的上表面生成之晶圓厚度的深度,並對晶棒照射雷射光束且形成剝離層。
本實施方式中,如圖4所示,雷射照射單元6具備長方體狀的基台64,在此基台64的上表面形成有沒入下方且在X軸方向上延伸的裝配凹所64a。然後,本實施方式中的第二保持台60在X軸方向上移動自如且將在Z軸方向上延伸的軸線作為中心而旋轉自如地被配置於基台64的裝配凹所64a上。此外,基台64上裝設有:X軸進給手段(未圖示),沿著裝配凹所64a而使第二保持台60在X軸方向上移動;及第二保持台用馬達(未圖示),通過第二保持台60的徑向中心且將在Z軸方向上延伸的軸線作為旋轉中心而使第二保持台60旋轉。X軸進給手段例如可具有以下的構成:滾珠螺桿,與第二保持台60連接且在X軸方向上延伸;及馬達,使該滾珠螺桿旋轉。第二保持台用馬達是與第二保持台60共同以X軸進給手段而在X軸方向上移動,因此在第二保持台60以X軸進給手段而在X軸方向上移動的情況下,第二保持台用的馬達也能使第二保持台60旋轉。此外,第二保持台60的上表面配置有多孔質的吸附卡盤66,該吸附卡盤66連接有吸引手段(未圖示),且在第二保持台60中,藉由以吸引手段在吸附卡盤66的上表面生成吸引力而成為將載置在吸附卡盤66之上表面的晶棒進行吸引保持的態樣。
如圖4所示,雷射照射單元6的雷射照射手段62包含:門型的支撐框架68,裝配在基台64的上表面;箱罩70,支撐於支撐框架68的內側;Y軸可動構件(未圖示),在Y軸方向上移動自如地裝設在箱罩70的下端側;及Y軸進給手段(未圖示),使Y軸可動構件在Y軸方向上移動。Y軸進給手段例如可具有以下的構成:滾珠螺桿,與Y軸可動構件連接且在Y軸方向上延伸;及馬達,使該滾珠螺桿旋轉。
若同時參照圖4及圖5並進行說明,則雷射照射手段6更進一步包含:雷射振盪器72(參照圖5),內置於箱罩70;聚光器74(同時參照圖4及圖5),升降自如地裝設在Y軸可動構件的下端側;對準手段76(參照圖4),在Y軸方向上與聚光器74隔開間隔且裝設在Y軸可動構件的下端側;及聚光點位置調整手段(未圖示),使聚光器74升降且調整以聚光器74聚光之脈衝雷射光束LB聚光點的Z軸方向位置。雷射振盪器72是將對晶棒具有穿透性波長之脈衝雷射進行振盪,且從雷射振盪器72射出脈衝雷射光束LB。聚光器74具有聚光透鏡(未圖示),將從雷射振盪器72射出之脈衝雷射光束LB進行聚光。對準手段76將第二保持台60所保持的晶棒進行拍照,並檢測應進行雷射加工的區域。聚光點位置調整手段例如可具有以下的構成:滾珠螺桿,與聚光器74連接且在Z軸方向上延伸;及馬達,使該滾珠螺桿旋轉。
如圖5所示,箱罩70中內置有以下構件:第一鏡面78,與雷射振盪器72在X軸方向上隔開間隔而配置,且反射從雷射振盪器72射出之脈衝雷射光束LB並將作為X軸方向的光軸轉換至Y軸方向;及第二鏡面(未圖示),與第一鏡面78在Y軸方向上隔開間隔且配置於聚光器74的上方,將以第一晶面78反射的脈衝雷射光束LB之光路徑從Y軸方向轉換至Z軸方向,並將脈衝雷射光束LB引導至聚光器74。
第二鏡面裝設在Y軸可動構件,若以Y軸進給手段移動Y軸可動構件,則聚光器74及對準手段76會共同在Y軸方向上移動。然後,光路徑設定在X軸方向,且從雷射振盪器72射出之脈衝雷射光束LB以第一鏡面78將光路徑從X軸方向轉換至Y軸方向並引導至第二鏡面,接著以第二鏡面將光路徑從Y軸方向轉換至Z軸方向並引導至聚光器74後,以聚光器74之聚光透鏡聚光並照射至第二保持台60所保持的晶棒。此外,不論是在藉由以Y軸進給手段移動Y軸可動構件而使聚光器74在Y軸方向上移動的情況,或在以聚光點位置調整手段而使聚光器74升降的情況,從雷射振盪器72射出之與X軸方向平行的脈衝雷射光束LB都以第一鏡面78將光路徑從X軸方向轉換至Y軸方向並引導至第二鏡面,且引導至第二鏡面之脈衝雷射光束LB都以第二鏡面將光路徑從Y軸方向轉換至Z軸方向而引導至聚光器74。
然後,雷射照射手段62中,藉由將保持於第二保持台60之晶棒以對準手段76拍攝並檢測應進行雷射加工的區域,再以聚光點位置調整手段使聚光器74升降,並將對晶棒具有穿透性波長之脈衝雷射光束LB的聚光點定位在相當於應從保持於第二保持台60之晶棒的上表面生成之晶圓厚度的深度後,一邊以Y軸進給手段使聚光器74在Y軸方向上適當移動,一邊對保持於第二保持台之晶棒照射脈衝雷射光束LB,而能夠在晶棒的內部形成強度下降之剝離層。再者,也可在對保持於第二保持台60之晶棒照射脈衝雷射光束LB時,以X軸進給手段使第二保持台60在X軸方向上移動。
參照圖1及圖6進行關於雷射照射單元8的說明。如圖1所示,連接雷射照射單元6而配置之晶圓剝離單元8至少由以下構件所構成:第三保持台80,保持晶棒並為圓形狀;晶圓剝離手段82,將保持於第三保持台80之晶棒的上表面進行保持,並從剝離層剝離出晶圓。
本實施方式中,如圖6所示,晶圓剝離單元8具備長方體狀的基台84,在此基台84的上表面形成有沒入下方且在X軸方向上延伸的裝配凹所84a。然後,本實施方式中的第三保持台80在X軸方向上移動自如地被配置於基台84的裝配凹所84a上。此外,基台84上裝設有X軸進給手段(未圖示),使第三保持台80沿著裝配凹所84a而在X軸方向上移動。X軸進給手段例如可具有以下的構成:滾珠螺桿,與第三保持台80連接且在X軸方向上延伸;及馬達,使該滾珠螺桿旋轉。此外,第三保持台80的上表面配置有多孔質的吸附卡盤86,該吸附卡盤86連接有吸引手段(未圖示),且在第三保持台80中,藉由以吸引手段在吸附卡盤86的上表面生成吸引力而成為將載置在吸附卡盤66之上表面的晶棒進行吸引保持的態樣。
如圖6所示,晶圓剝離單元8的晶圓剝離手段82含有門型的支撐框架88,裝配在基台84的上表面;箱罩90,被支撐於支撐框架88的內側;手臂92,升降自如地被裝設在箱罩90且從基端部在X軸方向上延伸;及手臂移動手段(未圖示),使手臂92升降。手臂移動手段例如可具有以下的構成:滾珠螺桿,與手臂92連接且在Z軸方向上延伸;及馬達,使該滾珠螺桿旋轉。
參照圖6及圖7進行關於晶圓剝離手段82的說明。如圖6及圖7所示,在手臂92的前端部固定有液槽94,該液槽94是在從晶棒剝離晶圓時,與第三保持台80共同移動並容納液體。液槽94具有圓形狀的頂面壁96,及從頂面壁96的周緣垂下之圓筒狀的緣壁98,且該液槽94的下端側為開放之態樣。緣壁98的外徑形成為小於第三保持台80之直徑,且若讓手臂92下降,則成為緣壁98的下端與第三保持台80的上表面接觸的態樣。在頂面壁96附設有連通液槽94之外部與內部的圓筒狀的液體供給部100,該液體供給槽100連接有液體供給手段(未圖示)。如圖7所示,在緣壁98之下端附設有環狀的墊片102。然後,若藉由手臂移動手段使手臂92下降且使緣壁98之下端與第三保持台80之上表面密接,則將第三保持台80之上表面與液槽94的內表面所包圍的空間規定為液體容納空間104。從液體供給手段通過液體供給部100而供給至液體容納空間104的液體106,是藉由墊片102而防止從液體容納空間104中洩漏。
如圖7所示,在液槽94的頂面壁96裝設氣缸108,氣缸108之氣缸管柱108a是從頂面壁96之上表面延伸至上方。氣缸108之活塞桿108b的下端部是通過頂面壁96之貫通開口96a且突出至頂面壁96之下方。在活塞桿108b的下端部固定有可由壓電陶瓷等所形成之超音波振動生成構件110,且在超音波振動生成構件110的下表面固定有吸附片112。在下表面形成多個吸引孔(未圖示)的吸附片112連接於吸引手段(未圖示),藉由以吸引手段在吸附片112的下表面生成吸引力,而成為吸附片112吸引保持晶棒的態樣。
然後,在晶圓剝離手段82中,藉由手臂移動手段使手臂92下降,且使緣壁98的下端密接於已保持形成有剝離層之晶棒的第三保持台80之上表面,並同時使氣缸108之活塞桿108b下降且使吸附片112吸附在晶棒的上表面,之後將液體106容納於液體容納空間104後,藉由使超音波振動生成構件110運作並對晶棒賦予超音波振動,而能夠更進一步降低剝離層的強度。此外,在晶圓剝離手段82中,在以吸附片112吸附晶棒上表面的狀態下,藉由以氣缸108使吸附片112上升,能夠將強度進一步降低之剝離層當作起點而從晶棒剝離出晶圓。
參照圖8進行關於匣盤9的說明。本實施方式的匣盤9由以下構件所構成:矩形的上壁113;矩形的下壁114,配置在上臂113的下方;矩形的一對側壁115,與上臂113及下壁114連接;及空洞116,貫通一對側壁115之間,並且匣盤9在上壁113的上表面具備支撐晶棒的晶棒支撐部117,且在下壁114的上表面具備對剝離出來之晶圓進行支撐的晶圓支撐部118。
本實施方式的晶棒支撐部117具備對應2個以上之大小尺寸的凹部119。凹部119具有:環狀之大直徑凹部119a,從上壁113的上表面沒入至下方;及圓形之小直徑凹部119b,比大直徑凹部119a之直徑還小且比大直徑凹部119a沒入至更下方。大直徑凹部119a與小直徑119b形成同心圓狀。然後,在匣盤9中,以大直徑凹部119a支撐比較大直徑(例如直徑6吋)的晶棒,以小直徑凹部119b支撐比較小直徑(例如直徑5吋)的晶棒。
雖然省略詳細的圖式,但晶圓支撐部118具備對應2個以上之大小尺寸的晶圓的凹部120。晶圓支撐部118之凹部120可具有以下構成:環狀之大直徑凹部,與晶棒支撐部117之凹部119的構成相同,從下壁114的上表面沒入至下方;及圓形之小直徑凹部,比此大直徑凹部之直徑還小且比大直徑凹部沒入至更下方。晶圓支撐部118的大直徑凹部與小直徑凹部可形成同心圓狀。然後,在匣盤9中,以晶圓支撐部118之大直徑凹部支撐比較大直徑(例如直徑6吋)的晶棒,以晶圓支撐部118之小直徑凹部支撐比較小直徑(例如直徑5吋)的晶棒。再者,匣盤9也可為與本實施方式相反的構成:在上壁113之上表面具備晶圓支撐部,在下壁114的上表面具備晶棒支撐部。
參照圖9進行關於輸送帶單元10的說明。沿著晶棒研削單元4、雷射照射單元6與晶圓剝離單元8而配置的輸送帶單元10至少由以下構件所構成:前行輸送帶121,將匣盤9往以圖9之箭頭Y1所示之Y1方向搬送;回送輸送帶122,將匣盤9往以圖9之箭頭Y2所示之Y2方向(Y1的相反方向)搬送;及搬送手段123,將匣盤9從前行輸送帶121的終點搬送至回送輸送帶122的起點。
前行輸送帶121具備:一對支撐壁125,在X軸方向上隔開間隔且在Y軸方向上延伸;多個滾輪126,在Y軸方向上隔開間隔且旋轉自如地裝設在各支撐壁125的內側;一對環狀皮帶127,捲繞在滾輪126上;及馬達128,使滾輪126旋轉。本實施方式中,雖然沿著Y軸方向配置的3個前行輸送帶121,但藉由適當變更前行輸送帶121的數量或支撐壁125的Y軸長度,而能夠變更匣盤9之搬送道路的長度。然後,在前行輸送帶121中,透過滾輪126並以馬達128使環狀皮帶127旋轉,藉此成為將裝配在環狀皮帶127上之匣盤9往Y1方向搬送的態樣。
本實施方式中,如圖9所示,因為在前行輸送帶121之下方配置的回送輸送帶122之構成可與前行輸送帶121之構成為實質上相同,所以對回送輸送帶122之構成標註與前行輸送帶之構成相同的符號。然後,在回送輸送帶122中,在與前行輸送帶121相反方向上,透過滾輪126並以馬達128使環狀皮帶127旋轉,藉此成為將裝配在環狀皮帶127上之匣盤9往Y2方向搬送的態樣。再者,回送輸送帶122也可配置在前行輸送帶121的上方。此外,在運轉晶圓生成裝置2時,較佳為常時運轉前行輸送帶121及回送輸送帶122兩者。
如圖9所示,在前行輸送帶121中之與晶棒研削單元4面對的位置及與雷射照射單元6面對的位置個別配置匣盤阻擋部129,使以前行輸送帶121搬送之匣盤9停止。本實施方式中,如圖10所示,匣盤阻擋部129具備:基板130,藉由適當的支架(未圖示)所固定;升降板131,升降自如地被支撐於基板130;汽缸手段132,使升降板131升降;及阻擋片133,固定在升降板131之Y1方向下流側端部。
如圖10所示,在升降板131的上表面形成有一對卡合突起131a,與形成於匣盤9之下壁114的下表面的一對被卡合凹所(未圖示)卡合。如圖10與圖11所示,氣體驅動或電力驅動的汽缸手段132將升降板131定位在通過位置、停止位置及離開位置,該通過位置是阻擋片133位於比前行輸送帶121所搬送之匣盤9的下端還下方的位置(例如圖10(a)與圖11(a)所示的位置);該停止位置是阻擋片133與前行輸送帶121所搬送之匣盤9接觸的位置(例如圖10(b)與圖11(b)所示的位置);該離開位置是匣盤9從環狀皮帶127離開的位置(例如圖10(c)與圖11(c)所示的位置)。
然後,匣盤阻擋部129中,藉由將升降板131定位在通過位置並容許匣盤9通過匣盤阻擋部129的上方(參照圖11(a)),且藉由將升降板131定位在比通過位置更上方的停止位置,而能夠使以前行輸送帶121搬送之匣盤9停止(參照圖11(b))。再者,在匣盤阻擋部129中,將升降板定位在比停止位置更上方的離開位置,藉此防止停止的匣盤9之下表面與環狀皮帶127之上表面的滑動而導致增大前行輸送帶121之馬達128的負載(參照圖11(c))。此外,若停止位置或離開位置中之升降板131的卡合突起131a與匣盤9的被卡合凹所卡合,則能防止升降板131中之匣盤9的位置錯位。
參照圖9及圖12進行關於搬送手段123的說明。鄰接前行輸送帶121之終點與回送輸送帶122之起點而配置的搬送手段123具備:支撐壁134,在Z軸方向上延伸;升降板135,升降自如地被支撐於支撐壁134;升降手段136,使升降板135升降;Y軸可動板137,在Y軸方向上移動自如且被支撐在升降板135的上表面;Y軸進給手段(未圖示),使Y軸可動板137在Y軸方向上移動;及阻擋片138,固定在Y軸可動板137之Y1方向的下流側端部。
升降手段136具有:滾珠螺桿139,與升降板135連接且在Z軸方向上延伸;及馬達140,使滾珠螺桿139旋轉。升降手段136可使升降板135在從圖12(a)所示之上升位置到圖12(b)所示之下降位置之間,沿著支撐壁134之導軌134a而在Z軸方向上升降,同時也可使其停止在任意的位置。在Y軸可動板137的上表面形成有一對卡合突起塊137a,與匣盤之上述一對被卡合凹所卡合。Y軸進給手段例如由氣缸或電動汽缸所構成,使Y軸可動板137在圖12(a)及圖12(b)中之以兩點鏈線所示的前進位置與在圖12(a)及圖12(b)中之以實線所示的後退位置之間,沿著升降板135之導軌135a而在Y軸方向上移動。
然後,在搬送手段123中,將Y軸可動板的上表面定位在比前行輸送帶121之環狀皮帶127的上表面還下方一點的位置,並同時藉由將Y軸可動板137定位在前進位置,使阻擋片138與被前行輸送帶121搬送之匣盤9接觸,而能夠使匣盤9停止在前行輸送帶121的終點(也是面對本實施方式中之晶圓剝離單元8的位置)。此外,在使匣盤9停止的狀態下,藉由使升降板135上升而使匣盤9的下表面從環狀皮帶127的上表面離開,而能夠將匣盤9裝配在Y軸可動板137的上表面。若要在Y軸可動板137裝配匣盤9,則將Y軸可動板137之卡合突起塊137a與匣盤9之被卡合凹所卡合,而可防止在Y軸可動板137中之匣盤9的位置錯位。再者,將已裝配匣盤9之Y軸可動板137定位至後退位置,接著使升降板135下降至Y軸可動板137的上表面位在比回送輸送帶122之環狀皮帶127的上表面還上方一點的位置,再將Y軸可動板137定位在前進位置,然後藉由使升降板135稍微下降,而能將匣盤9從Y軸可動板137轉移至回送輸送帶122的環狀皮帶127。以此方式進行,搬送手段123將匣盤9從前行輸送帶121的終點搬送至回送輸送帶122的起點。
本實施方式如圖9所示,輸送帶單元120更進一步具備:第一轉移手段141,在以前行輸送帶121之起點側的匣盤阻擋部129所停止的匣盤9與晶棒研削單元4之間轉移晶棒;第二轉移手段142,在以前行輸送帶121之終點側的匣盤阻擋部129所停止的匣盤9與雷射照射單元6之間轉移晶棒;及第三轉移手段143,在以搬送手段123所停止的匣盤9與晶圓剝離單元8之間轉移晶棒,並同時將從晶棒剝離出之晶圓從晶圓剝離單元8轉移至匣盤9。
因為第二轉移手段142的構成及第三轉移手段143的構成可與第一轉移手段141的構成相同,所以以下說明第一轉移手段141的構成,省略關於第二轉移手段142之構成及第三轉移手段143之構成的說明。第一轉移手段141包含:多關節手臂144;驅動源(未圖示),驅動多關節手臂144;及吸附片145,裝設在多關節手臂144的前端。由氣體驅動源或電動驅動源所組成的驅動源可驅動多關節手臂144,成為將吸附片145定位在X軸方向、Y軸方向及Z軸方向之各種方向中的任意位置,且同時成為使吸附片145上下翻轉的態樣。單面形成有多個吸引孔(未圖示)的吸附片145連接有吸引手段(未圖示),在第一轉移手段141中,藉由以吸引手段在吸附片145生成吸引力,而成為以吸附片145吸引保持晶棒的態樣。此外,第一轉移手段141中,藉由以驅動源驅動多關節手臂144,將以吸附片145吸附之晶棒在以匣盤阻擋部129所停止的匣盤9及晶棒研削單元4之間進行轉移。
參照圖13進行關於晶棒儲存部11的說明。本實施方式的晶棒儲存部11至少由以下構件所構成:載置台146,載置支撐晶棒的匣盤9;第一環狀皮帶148,將載置台146所配設之支撐晶棒的匣盤9進行輸送;驅動力傳遞部150,與第一環狀皮帶148連接並傳遞驅動力;台架152,可在其上下位置配置多個該載置台146。
如圖13所示,在矩形狀之載置台146的上表面形成有在Y軸方向延伸之長方形開口154,並且多個滾輪(未圖示)旋轉自如地被裝設在載置台146上。載置台146之多個滾輪上捲繞有第一環狀皮帶148,第一環狀皮帶148的上表面從長方形開口154露出。此外,在X軸方向上延伸之圓筒狀的驅動力傳遞部150是旋轉自如地被裝設在載置台146。驅動力傳遞部150之一端部是從載置台146之Y軸方向一端側的側面突出,驅動力傳遞部150之另一端部是與捲繞有第一環狀皮帶148之滾輪連接。本實施方式的台架152包含:一對側面板156,在X軸方向上隔開間隔而配置;及4個板架158,在側面板156間的上下方向隔開間隔而配置,各板架158上配設有載置台146。然後,在晶棒儲存部11中,若使驅動力傳遞部150旋轉,則第一環狀皮帶148會旋轉,藉由第一環狀皮帶148而成為將載置在載置台146之上表面的匣盤9往Y軸方向輸送之態樣。再者,載置台146的滾輪是由圓筒構件所構成,也可兼作驅動力傳遞部150。
參照圖1及圖14進行關於晶棒授受單元12的說明。如圖1所示,晶棒授受單元12配置在輸送帶單元10及晶棒儲存部11之間。此外,如圖14所示,本實施方式之晶棒授受單元12至少由以下構件所構成:接收台160,接收來自載置台146之支撐晶棒的匣盤9;第二環狀皮帶162,配設在接收台160且將支撐晶棒的匣盤9授受給輸送帶單元10;馬達164,驅動第二環狀皮帶162;離合器部166,與第二環狀皮帶連接,且傳遞驅動力給晶棒儲存部11的驅動力傳遞部150;及升降機168,將接收台160定位至多個上下配設之載置台146。
如圖14所示,在矩形狀之接收台160的上表面形成有在X軸方向上隔開間隔且在Y軸方向延伸之一對長方形開口170,並且多個滾輪(未圖示)旋轉自如地被裝設在接收台160上。接收台160之多個滾輪上捲繞有第二環狀皮帶162,第二環狀皮帶162的上表面從長方形開口170露出。此外,在X軸方向上延伸之圓筒狀的驅動力傳遞部172是旋轉自如地被裝設在接收台160的Y軸方向一端側。驅動力傳遞部172之一端部是從接收台160的側面突出,驅動力傳遞部172之另一端部是與捲繞有第二環狀皮帶162之滾輪連接。在接收台160的Y軸方向之另一端側的側面裝設有馬達164,馬達164的旋轉軸(未圖示)與捲繞有第二環狀皮帶162的滾輪連接。再者,接收台160的滾輪是由圓筒構件所構成,也可兼作驅動力傳遞部172。
參照圖14繼續說明,離合器部166具有:氣缸174,具有固定在接收台之氣缸管柱174a及在X軸方向上進退自如之裝設有氣缸管柱174a的活塞桿174b;支架片176,固定在氣缸174之活塞桿174b的前端;一對錐形銷178,在Y軸方向上隔開間隔,且旋轉自如地被裝設在支架片176上;及環狀傳遞皮帶180,捲繞在一對錐形銷178上。此外,升降機168具備:基板182;支撐板184,從基板182之X軸方向一端部向Z軸方向延伸;升降板186,升降自如地被支撐在支撐板184;及升降手段188,使升降板186升降。升降板186的上表面配設有接收台160。升降手段188具有:滾珠螺桿(未圖示),與升降板186連接且在Z軸方向上延伸;及馬達190,使該滾珠螺桿旋轉。升降手段188使升降板186沿著支撐板184之導軌184a而在Z軸方向上升降,同時也可使其停止在任意的位置。
參照圖15進行說明,在晶棒授受單元12中,使升降機168之升降板186升降,且使升降板186在晶棒儲存部11之任意載置台146的上表面與接收台160的上表面為一致的位置停止後,使離合器部166之氣缸174的活塞桿174b從圖15所示之伸長位置移動至退縮位置。若以此方式進行,則離合器部166之一對錐形銷178的其中一個銷會插入至晶棒儲存部11的驅動力傳遞部150且為可旋轉傳遞地與其連接,與此同時,一對錐形銷178的另一個銷會插入晶棒授受單元12的驅動力傳遞部172且為可旋轉傳遞地與其連接。若在此狀態旋轉馬達164,則第二環狀皮帶162旋轉的同時,藉由晶棒授受單元12之驅動力傳遞部172、一對錐形銷178、傳遞皮帶180與晶棒儲存部11之驅動力傳遞部150進行旋轉,而使晶棒儲存部11之第一環狀皮帶148旋轉。藉此,載置在晶棒儲存部11的載置台146之上表面的匣盤9藉由第一環狀皮帶148而在Y軸方向輸送,並授受至晶棒授受單元12的接收台160。
此外,晶棒授受單元12以接收台160接收匣盤9後,使馬達164停止旋轉,並且藉由使離合器166之氣缸174的活塞桿174b從退縮位置移動至伸長位置,而解除一對錐形銷178的其中一個銷與晶棒儲存部11的驅動力傳遞部150的連接,並同時解除一對錐形銷178的另一個銷與晶棒授受單元12的驅動力傳遞部172的連接。然後,晶棒授受單元12藉由以升降機使升降板186適當地升降,使載置匣盤9的接收台160之上表面與輸送帶單元10的前行輸送帶121之環狀皮帶127的上表面的位置一致後,使馬達164旋轉。藉此,旋轉第二環狀皮帶162,而將載置在接受台160之上表面的匣盤9授受給輸送帶單元10的前行輸送帶121。藉此,晶棒授受單元12將容納在晶棒儲存部11之匣盤9所支撐的晶棒授受至輸送帶單元10。
再者,晶棒儲存部11之驅動力傳遞部150、晶棒授受單元12之驅動力傳遞部172及離合器部166並不限定於上述的實施方式,例如也可以是如圖16所示之其他的實施方式。圖16所示之其他的實施方式中,取代上述的離合器部166之一對錐形銷178,而在支架片176上旋轉自如地裝設有接收台160之滾輪所連接的旋轉軸192及驅動磁性構件194。此外,載置台146的滾輪上裝設有作為驅動力傳遞部的從動磁性構件196。
然後,在圖16所示之其他的實施方式中,使升降板186移動至晶棒儲存部11之任意的載置台146的上表面與接收台160的上表面為位置一致的位置後,透過由驅動磁性構件194及從動磁性構件196所構成的磁性聯軸器,成為馬達164的旋轉能傳遞至載置台146之第一環狀皮帶148的態樣。再者,因為上述磁性聯軸器可為非接觸式(能夠在驅動磁性構件194與從動磁性構件196之間設置間隙),所以在圖16所示之其他實施方式中,不需要用於使支架片176在X軸方向上移動的氣缸174。
若參照圖1及圖9並說明,則本實施方式之晶圓生成裝置2進一步具備:卡匣儲存部200,容納有多個卡匣198,該卡匣198容納被剝離出來的晶圓;及容納手段202,將被匣盤9之晶圓支撐部118所支撐的晶圓容納在卡匣198,該卡匣198是容納在該卡匣儲存部200。
如圖1所示,卡匣儲存部200在X軸方向有4列且在Z軸方向有4行,具有合計16個的卡匣容納部204。在各卡匣容納部204中容納有卡匣198,該卡匣198容納在晶圓剝離單元8中之從晶棒剝離出來的晶圓。卡匣198是在上下方向隔開間隔而可容納多片晶圓(例如25片)。此外,在卡匣儲存部200中,各卡匣容納部204是在Y軸方向上貫通,而可從圖1中之Y軸方向的前側將卡匣198容納在各卡匣容納部204,且可從圖1中之Y軸方向的後側將晶圓容納在卡匣容納部204內的卡匣198。
如圖9所示,容納手段202是鄰接晶棒授受單元12及卡匣儲存部200而配置。容納手段202具備:支撐壁206;X軸可動構件208,在X軸方向上移動自如地支撐在支撐壁206;X軸進給手段210,使X軸可動構件208在X軸方向上移動;升降區塊212,升降自如地支撐在X軸可動構件208;升降手段214,使升降區塊212升降;多關節手臂216,支撐於升降區塊212;保持片218,上下翻轉自如地被裝設在多關節手臂216的前端;及驅動源(未圖示),驅動多關節手臂216。
參照圖9繼續說明,支撐於支撐壁206的X軸進給手段210具有:滾珠螺桿220,其螺帽部220a固定於X軸可動構件208且在X軸方向上延伸;馬達222,使滾珠螺桿220旋轉,且X軸進給手段210可使X軸可動構件208沿著支撐壁206之導軌206a而在X軸方向上移動。支撐於X軸可動構件208的升降手段214具有:滾珠螺桿224,與升降區塊212連接且在Z軸方向上延伸;馬達226,使滾珠螺桿224旋轉,且升降手段214可使升降區塊212沿著X軸可動構件208之導軌208a而升降。由氣體驅動源或電動驅動源所組成的驅動源可驅動多關節手臂216,而可將保持片218定位在X軸方向、Y軸方向及Z軸方向之各種方向中的任意位置,且同時可使保持片218上下翻轉。單面形成有多個吸引孔(未圖示)的保持片218連接有吸引手段(未圖示)。
然後,在容納手段202中,藉由將保持片218的吸引孔朝下並以吸引手段於保持片218生成吸引力,而能夠以保持片218吸引保持被支撐於匣盤9之晶圓保持部118的晶圓,且能夠將以保持片218保持的晶圓容納在卡匣198,該卡匣198容納於卡匣盤儲存部200。
圖17(a)到(c)表示藉由晶圓生成裝置2實施加工而得到的晶棒230。晶棒230是由六方單晶碳化矽(SiC)作為整體而形成圓柱形狀,具有:圓形狀的第一面232;圓形狀的第二面234,與第一面232為相反側;外周面236,位於第一面232及第二面234之間;c軸(<0001>方向),位於從第一面232到第二面234;及c面({0001面}),與c軸正交。
在晶棒230中,c軸相對第一面232的垂直線238為傾斜,c面與第一面232形成夾角α(例如α=1、3、6度)。在圖17(a)到(c)中,將形成夾角α的方向以箭頭A表示。此外,在晶棒230的外周面236形成有表示晶體方向之矩形狀的第一定向平面240及第二定向平面242。第一定向平面240與形成夾角α的方向A為平行,第二定向平面242與形成夾角α的方向A為正交。如圖17(b)所示,從上方來看,第二定向平面242的長度L2比第一定向平面240的長度L1還短(L2<L1)。
再者,藉由晶圓生成裝置2實施加工而得到的晶棒並不限定於上述晶棒230,例如六方單晶碳化矽(SiC)晶棒可為c軸相對第一面之垂直線為不傾斜,c面與第一面的夾角為0度(即,第一面的垂直線與c軸為一致),或是可為由氮化鎵(GaN)等單晶碳化矽(SiC)以外的素材所組成的晶棒。
在藉由如上述的晶圓生成裝置2而從晶棒230生成晶圓時,首先,實施晶棒容納步驟,將晶棒230容納於晶棒儲存部11。本實施方式的晶棒容納步驟中,首先,準備4個晶棒230,並如圖1所示,使4個匣盤9的晶棒支撐部117支撐4個晶棒230。接著,將支撐有晶棒230的匣盤9載置並容納在晶棒儲存部11之各載置台146。
在實施晶棒容納步驟後,以晶棒授受單元12及輸送帶單元10實施第一搬送步驟,將晶棒230從晶棒儲存部11搬送至雷射照射單元6。因為通常會將晶棒230的端面(第一面232及第二面234)平坦化至不會妨礙後述剝離層形成步驟中的雷射光束射入的程度,所以在本實施方式中,雖然說明了在第一搬送步驟中,將晶棒230從晶棒儲存部11搬送至雷射照射單元6的例子,但在晶棒230之端面尚未平坦化至不會妨礙剝離層形成步驟中的雷射光束射入之程度的情況下,也可以在第一搬送步驟中,將晶棒230從晶棒儲存部11搬送至晶棒研削單元4。
第一搬送步驟中,首先使晶棒授受單元12之升降機168的升降板186升降,並將升降板186定位於晶棒儲存部11之任意位置(例如最上面一行)的載置台146的上表面與接收台160的上表面為位置一致的位置。接著,使離合器部166之氣缸174運作,離合器部166之一對錐形銷178的一個銷插入至晶棒儲存部11的驅動力傳遞部150的同時,一對錐形銷178的另一個銷插入晶棒授受單元12的驅動力傳遞部172。接著,使晶棒授受單元12之馬達164旋轉,而使第二環狀皮帶162與第一環狀皮帶148同時旋轉。藉此,載置在載置台146的匣盤9藉由第一環狀皮帶148而在Y軸方向上輸送,並授受至晶棒授受單元12的接收台160。
將匣盤9授受至接收台160後,停止馬達164的旋轉。此外,藉由使氣缸174的活塞桿174b從退縮位置移動至伸長位置,而解除一對錐形銷178的其中一個銷與晶棒儲存部11的驅動力傳遞部150的連接,並同時解除一對錐形銷178的另一個銷與晶棒授受單元12的驅動力傳遞部172的連接。接著,藉由使升降機168的升降板186移動,使載置匣盤9的接收台160之上表面與輸送帶單元10的前行輸送帶121之環狀皮帶127的上表面的位置一致。接著,藉由使馬達164旋轉,而使第二環狀皮帶162旋轉,並將載置在接受台160之上表面的匣盤9授受給前行輸送帶121。
將匣盤9授受給前行輸送帶121後,以前行輸送帶121將匣盤9搬送至面對雷射照射單元6的位置。此時,將配置在面對晶棒研削單元4的位置之匣盤阻擋部129的升降板131定位在通過位置,且同時將配置在面對雷射照射單元6的位置之匣盤阻擋部129的升降板131定位在停止位置。藉此,能夠使以前行輸送帶121在Y1方向上搬送的匣盤9通過配置在面對晶棒研削單元4之位置的匣盤阻擋部129的上方,並同時能夠以面對雷射照射單元6之位置的匣盤阻擋部129使匣盤9停止。
接著,為了使已停止之匣盤9的下表面從環狀皮帶127的上表面離開,使匣盤阻擋部129的升降板131上升至離開位置。接著,驅動第二轉移手段142的多關節手臂144,並使吸附片145與晶棒230的上表面(本實施方式中為第一面232)密接。接著,運作連接有吸附片145的吸引手段而於吸附片145生成吸引力,並以吸附片145吸引保持晶棒230。接著,以多關節手臂144使吸附片145移動,如圖18所示,使以吸附片145吸引保持之晶棒230的下表面(本實施方式中為第二面234)與雷射照射單元6之第二保持台60的上表面接觸。此時,第二保持台60是被定位在用於裝卸晶棒的晶棒裝卸位置(如圖4所示之位置)。
此外,如參照圖18而能理解,在本實施方式之圓形狀的吸附卡盤66的外周緣形成有:第一直線部66a,對應晶棒230之第一定向平面240;及第二直線部66b,對應第二定向平面242,並藉由吸附卡盤66並以預定的吸引力而成為能夠對形成有第一定向平面240及第二定向平面242的晶棒230進行吸引保持的態樣。然後,使連接有吸附片145的吸引手段停止,而解除吸附片145的吸引力並將晶棒230載置於第二保持台60的上表面。以此方式實施第一搬送步驟,將晶棒230從晶棒儲存部11搬送至雷射照射單元6。再者,雖然省略圖示,但在晶棒研削單元4之第一保持台14的吸附卡盤22及晶圓剝離單元8之第三保持台的吸附卡盤86也形成:第一直線部,對應第一定向平面240;及第二直線部,對應第二定向平面242。
實施第一搬送步驟後,以第二保持台60保持晶棒230,同時也以雷射照射單元6實施剝離層形成步驟,將對晶棒230具有穿透性波長之雷射光束的聚光點定位在相當於應從保持於第二保持台60之晶棒230的上表面生成之晶圓厚度的深度,並對晶棒230照射雷射光束且形成剝離層。
在剝離層形成步驟中,首先,在第二保持台60的上表面生成吸引力,而以第二保持台60吸引保持晶棒230。接著,以X軸進給手段使第二保持台60在X軸方向上移動的同時,以Y軸進給手段使Y軸可動部件在Y軸方向上移動,而將晶棒230定位在對準手段76的下方。接著,以對準手段76從晶棒230的上方拍攝晶棒230。接著,基於以對準手段76所拍攝之晶棒230的影像,藉由以第二保持台用的馬達及X軸進給手段使第二保持台60旋轉及移動,且同時以Y軸進給手段移動Y軸可動構件,而調整晶棒230的方向至預定方向,並同時調整晶棒230與聚光器74之在XY平面中的位置。在調整晶棒230的方向至預定方向時,如圖19(a)所示,藉由使第二定向平面242與X軸方向一致,而使與形成夾角α之方向A正交的方向跟X軸方向一致的同時,使形成夾角α之方向A與Y軸方向一致。
接著,以聚光點位置調整手段使聚光器74升降,如圖19(b)所示,將聚光點FP從晶棒230的第一面232定位至相當於應生成晶圓厚度的深度。接著,在與形成夾角α之方向A正交的方向一致的X軸方向上,以X軸進給手段一邊使第二保持台60移動,一邊從聚光器74對晶棒230照射對晶棒230具有穿透性波長的脈衝雷射光束LB。若以此方式進行,如圖20(a)及20(b)所示,藉由脈衝雷射光束LB的照射,碳化矽(SiC)分離成矽(Si)跟碳(C),接著所照射之雷射光束LB被先前形成的碳(C)所吸收,連鎖地分離成碳(C)跟矽(Si)的同時,從碳化矽(SiC)分離成矽(Si)跟碳(C)的部分246生成沿著c面等向地延伸之裂痕248。
接著,藉由以Y軸進給手段移動Y軸可動構件,在與形成夾角α之方向A一致的Y軸方向上,以不超過裂痕248之寬度的範圍,將聚光點FP相對地對晶棒230進行預定分度量Li的分度進給。然後,藉由交互重複進行脈衝雷射光束LB與分度進給,在形成夾角α之方向A上隔開預定分度量Li的間隔而形成多個分離部分246,該分離部分246是在與形成夾角α之方向A正交的方向上連續延伸。與此同時,從分離部分246沿著c面依序生成等向地延伸的裂痕248,且讓在形成夾角α之方向A中鄰接之裂痕248與裂痕248在上下方向中看起來是重疊。藉此,在相當於應從晶棒230的上表面生成之晶圓厚度的深度能夠形成用於從晶棒230剝離出晶圓而降低強度的剝離層250,該剝離層250是由分離部分246及裂痕248所組成。形成剝離層250後,將第二保持台60定位在晶棒裝卸位置的同時,解除第二保持台60的吸引力。再者,剝離層形成步驟例如能夠以以下的加工條件實施。
脈衝雷射光束的波長:1064nm
重複頻率:80kHz
平均輸出:3.2W
脈衝寬度:4ns
聚光點的直徑:3μm
聚光透鏡的數值孔徑(NA):0.43
聚光點的Z軸方向位置:從晶棒上表面開始往下300μm
第二保持台的進給速度:120~260 mm/s
分度量:250~400μm
在實施剝離層形成步驟後,實施第二搬送步驟,以輸送帶單元10將形成有剝離層之晶棒230從雷射照射單元6搬送至晶圓剝離單元8。在第二搬送步驟中,首先,驅動第二轉移手段142之多關節手臂144,且使吸附片145密接於第二保持台60上之晶棒230的第一面232,並以吸附片15吸引保持晶棒230。接著,以多關節手臂144使吸附片145移動,並使以吸附片145吸引保持之晶棒230的第二面234與匣盤9之晶棒支撐部117接觸。接著,解除吸附片145的吸引力,並使匣盤之晶棒支撐部117支撐晶棒230。接著,藉由使匣盤阻擋部129之升降板131從離開位置下降至通過位置,而將匣盤9載置於前行輸送帶121之環狀皮帶127上。
將匣盤9授受給前行輸送帶121後,以前行輸送帶121將匣盤9搬送至面對晶圓剝離單元8的位置(本實施方式中的前行輸送帶121的終點)。此時,搬送手段123之Y軸可動板137的上表面比前行輸送帶121之環狀皮帶127的上表面的位置還低,且在將升降板135定位在阻擋片138與以前行輸送帶121所搬送的匣盤9接觸之高度的同時,將Y軸可動板137定位在前進位置。藉此,能夠使阻擋片138與以前行輸送帶121在Y1方向所搬送的匣盤9接觸,且能夠使匣盤9在面對晶圓剝離單元8的位置停止。
接著,使搬送手段123的升降板135上升,並在將已停止之匣盤9裝配在Y軸可動板137之上表面的同時,使匣盤9的下表面從環狀皮帶127的上表面離開。接著,驅動第三轉移手段143之多關節手臂144,且使吸附片145密接於晶棒230的第一面232,並以吸附片145吸引保持晶棒230。接著,以多關節手臂144使吸附片145移動,並使以吸附片145吸引保持之晶棒230的第二面234與晶圓剝離單元8之第三保持台80的上表面接觸。此時,第三保持台80是被定位在晶棒裝卸位置(如圖6所示之位置)。然後,解除吸附片145的吸引力,並將晶棒230載置於第三保持台80的上表面。以此方式實施第二搬送步驟,將晶棒230從雷射照射單元6搬送至晶圓剝離單元8。
實施第二搬送步驟後,以第三保持台80保持形成有剝離層250之晶棒230,並同時以晶圓剝離單元8實施晶圓剝離步驟,保持第三保持台80所保持之晶棒230的上表面並從剝離層250剝離出晶圓。
在晶圓剝離步驟中,首先,以第三保持台80吸引保持晶棒230。接著,如圖21(a)所示,將第三保持台80定位至液槽94下方之晶圓剝離位置。接著,以手臂移動手段使手臂92下降,且如21(b)所示,使液槽94之緣壁98的下表面密接於第三保持台80的上表面。
接著,如圖7所示,使氣缸108之活塞桿108b移動,並使吸附片112之下表面密接於晶棒230的第一面232。接著,在吸附片112之下表面生成吸引力,並從第一面232側以吸附片112吸引保持晶棒230。接著,使連接有液體供給部100之液體供給手段運作,並從液體供給部100向液體容納空間104供給液體106(例如水)至浸漬超音波振動生成構件110為止。接著,運作超音波振動生成構件110,藉由對晶棒230賦予超音波振動,刺激剝離層250並使裂痕248延伸而使剝離層250的強度更加下降。
接著,在以吸附片112吸引保持晶棒230的狀態下,藉由以手臂移動手段使手臂92上升,如圖22所示,以剝離層250作為起點而能從晶棒230剝離出應生成之晶圓252。此外,在使手臂92上升時,液體106從液體容納空間104排出,液體106通過形成於基台84的排水口(未圖示)並排出至晶圓剝離單元8的外部。從晶棒230剝離出晶圓252後,在將第三保持台80定位在晶棒裝卸位置的同時,解除第三保持台80的吸引力。再者,也可以在對晶棒230施加超音波振動時,在晶棒230的上表面與吸附片112的下表面之間設置間隙(例如2~3mm)。此外,也可以在以剝離層250作為起點而從晶棒230剝離晶圓時,以第三轉移手段143的吸附片145吸引保持晶棒230的上表面之後,藉由使吸附片145上升而從晶棒230剝離出晶圓252。
實施晶圓剝離步驟後,以輸送帶單元10、晶棒授受單元12及容納手段202實施第三搬送步驟,將從晶棒230剝離出來之晶圓252從晶圓剝離單元8搬送並容納至卡匣儲存部200之卡匣198。第三搬送步驟中,首先,驅動第三轉移手段143之多關節手臂144,使第三轉移手段143之吸附片145與被晶圓剝離手段82之吸附片112所吸附之晶圓252的剝離面252a密接,並以吸附片145吸引保持晶圓252。接著,解除晶圓剝離手段82之吸附片112的吸引力,並從晶圓剝離手段82之吸附片112授受晶圓252給第三轉移手段143之吸附片145。接著,以多關節手臂144使吸附片145移動,並使以吸附片145吸引保持之晶圓252與匣盤9之晶圓支撐部118接觸。接著,解除吸附片145的吸引力,並使匣盤之晶圓支撐部118支撐晶圓252。
此外,第三搬送步驟中,在搬送晶圓252的同時,應將剝離出晶圓252的晶棒230從晶圓剝離裝置8搬送至晶棒研削單元4,並且驅動多關節手臂144,使吸附片145密接於第三保持台80上之晶棒230的剝離面230a,並以吸附片145吸引保持晶棒230。接著,以多關節手臂144使吸附片145移動,並將以吸附片145吸引保持之晶棒230搬送至匣盤9之晶棒支撐部117且使其支撐晶棒230。接著,將裝配有匣盤9之搬送手段123的Y軸可動板137定位至後退位置。接著,使升降板135下降,並將Y軸可動板137的上表面定位至比回送輸送帶122之環狀皮帶127的上表面還上方一點的位置。接著,在將Y軸可動板137定位至前進位置的同時,藉由使升降板135下降,而將匣盤9載置在回送輸送帶122之環狀皮帶上127。
將匣盤9載置在回送輸送帶122後,以回送輸送帶122將匣盤9搬送至回送輸送帶122之終點的位置。此時,以晶棒授受單元12之升降機168使接收台160的上表面與回送輸送帶122之環狀皮帶127的上表面的高度位置一致,並同時以讓第二環狀皮帶162的上表面側往Y2方向前進的方式,以馬達164使第二環狀皮帶162旋轉。藉此,將以回送輸送帶122而在Y2方向上所搬送的匣盤9載置於接收台160的上表面。
於接收台160載置匣盤9後,在停止馬達164旋轉的同時,使升降的168的升降板186移動,並使載置匣盤9的接收台160之上表面與輸送帶單元10的前行輸送帶121之環狀皮帶127的上表面的高度位置一致。此時,為了不阻礙升降板186的移動,將氣缸174之活塞桿174b定位於退縮位置。接著,藉由容納手段202之X軸進給手段210及升降手段214使升降區塊212移動的同時,驅動多關節手臂216,使保持片218密接於接收台160上之匣盤9所支撐的晶圓252的上表面,並以保持片218吸引保持晶圓252。然後,藉由以X軸進給手段210、升降手段214及多關節手臂216使保持片218移動,將以保持片218所吸引保持之晶圓252從匣盤9搬出,並移動至卡匣儲存部200之卡匣198內。然後解除保持片218的吸引力。以此方式進行,將從晶棒230剝離出來的晶圓252從晶圓剝離單元8搬送並容納至卡匣儲存部200的卡匣198。
從匣盤9搬出晶圓252後,使第二環狀皮帶162旋轉,並將載置於接收台160之上表面的匣盤9授受給前行輸送帶121,且以前行輸送帶121搬送匣盤9。此時,將裝配於面對晶棒研削單元4之位置的匣盤阻擋部129之升降板131定位於停止位置。藉此,能夠以面對晶棒研削單元4之位置的匣盤阻擋部129使以前行輸送帶121而在Y1方向上搬送的匣盤9停止。
接著,為了使已停止之匣盤9的下表面從環狀皮帶127的上表面離開,使匣盤阻擋部129的升降板131上升至離開位置。接著,驅動第一轉移手段141之多關節手臂144,且使吸附片145密接於晶棒230的剝離面230a,並以吸附片145吸引保持晶棒230。接著,以多關節手臂144使吸附片145移動,使晶棒230之第二面234與晶棒研削單元4之第一保持台14的上表面接觸,該晶棒研削單元4之第一保持台14是被定位在晶棒裝卸位置。然後,解除吸附片145的吸引力,並將晶棒230載置於第一保持台14的上表面。以此方式進行,將被剝離出晶圓的晶棒230從晶圓剝離單元8搬送至晶棒研削單元4。
實施第三搬送步驟後,將被剝離出晶圓252的晶棒230以第一保持台14保持的同時,以晶棒研削單元4實施晶棒研削步驟,將第一保持台所保持之晶棒230的剝離面230a進行研削且平坦化。
若參照圖3進行說明,則在晶棒研削步驟中,首先,在第一保持台14的上表面生成吸引力,並以第一保持台14吸引保持晶棒230。接著,將保持著晶棒230的第一保持台14定位於研削位置。接著,以從上方來看為逆時針旋轉且以預定旋轉速度(例如300rpm)使保持著晶棒230的第一保持台14旋轉。此外,以從上方來看為逆時針旋轉且以預定旋轉速度(例如6000rpm)旋轉使主軸36旋轉。接著,使主軸外殼30下降,並使研削磨石44接觸晶棒230之剝離面230a。其後,以預定的研削進給速度(例如1.0μm/s)使主軸外殼30下降。藉此,能夠將被剝離出晶圓252之晶棒230的剝離面230a進行研削,且能夠將晶棒230之剝離面230a平坦化至不妨礙剝離層形成步驟中之脈衝雷射光束LB射入的程度。將晶棒230之剝離面230a平坦化後,將保持著晶棒230的第一保持台14定位在晶棒裝卸位置,並同時解除第一保持台14的吸引力。
實施晶棒研削步驟後,實施第四搬送步驟,以輸送帶單元10將剝離面230a被平坦化之晶棒230從晶棒研削單元4搬送至雷射照射單元6。在第四搬送步驟中,首先,驅動第一轉移手段141之多關節手臂144,且使吸附片145密接於第一保持台14上之晶棒230的剝離面230a,並以吸附片15吸引保持晶棒230。接著,以多關節手臂144使吸附片145移動,並使以吸附片145吸引保持之晶棒230的第二面234與匣盤9之晶棒支撐部117接觸。接著,解除吸附片145的吸引力,並使匣盤之晶棒支撐部117支撐晶棒230。接著,藉由使匣盤阻擋部129之升降板131從離開位置下降至通過位置,而將匣盤9載置於前行輸送帶121之環狀皮帶127上。
將匣盤9載置在前行輸送帶121後,以前行輸送帶121將匣盤9搬送至面對雷射照射單元6的位置。此時,將配置在面對雷射照射單元的位置之匣盤阻擋部129之升降板131定位在停止位置,並以面對雷射照射單元6之位置的匣盤阻擋部129使以前行輸送帶121而在Y1方向上搬送的匣盤9停止。接著,為了使已停止之匣盤9的下表面從環狀皮帶127的上表面離開,使匣盤阻擋部129的升降板131上升至離開位置。接著,驅動第二轉移手段142之多關節手臂144,且使吸附片145密接於晶棒230的剝離面230a,並以吸附片145吸引保持晶棒230。接著,以多關節手臂144使吸附片145移動,並使以吸附片145吸引保持之晶棒230的第二面234與定位於晶圓裝卸位置的雷射照射單元6之第二保持台60的上表面接觸。然後,解除吸附片145的吸引力,並將晶棒230載置於第二保持台60的上表面。以此方式進行,實施第四搬送步驟,將剝離面230a被平坦化後的晶棒230從晶棒研削單元4搬送至雷射照射單元6。
實施第四搬送步驟後,以雷射照射單元6實施上述的剝離層形成步驟。然後,藉由重複實施剝離層形成步驟、晶圓剝離步驟、晶棒研削步驟及從第二至第四的搬送步驟,從晶棒230生成可生成之數量的晶圓252,並將晶圓252容納於卡匣儲存部200之卡匣198。
以上,雖然著眼於1個晶棒230並說明在晶圓生成裝置2中,對晶棒230實施各步驟,但藉由在晶圓生成裝置2中,在實施第一搬送步驟,從晶棒儲存部11搬送晶棒230至雷射照射單元6後,以適當的間隔時間重複實施第一搬送步驟的同時,共同進行剝離層形成步驟、晶圓剝離步驟、晶棒研削步驟及從第二至第四的搬送步驟,並對多個(本實施方式中為4個)晶棒230重複實施,而能夠從多個晶棒230生成可生成數量的晶圓230。此外,從1個晶棒230生成之晶圓252的數量例如為100片的情況是將晶圓252容納於可容納25片的4個卡匣198時,藉由將辨識匣盤9之ID附加在匣盤9的同時,將讀取匣盤9之ID的讀取手段設置在晶圓生成裝置2上,而能夠將在每個晶棒230生成之晶圓252進行分類並將其容納於卡匣198。
如上所述,因為本實施方式中的晶圓生成裝置2至少由下述的構件所構成,所以可以自動地進行從晶棒230生成晶圓252之一連串的作業,能夠提高生產效率,其具備:晶棒研削單元4,至少由第一保持台14及研削手段16所構成,第一保持台14用於保持晶棒230,研削手段16用於將保持於第一保持台14之晶棒的上表面進行研削且平坦化;雷射照射單元6,至少由第二保持台60及雷射照射手段62所構成,第二保持台60用於保持晶棒230,雷射照射手段62用於將對晶棒230具有穿透性波長之雷射光束LB的聚光點FP定位在相當於應從保持於第二保持台60之晶棒230的上表面生成之晶圓252厚度的深度,並對晶棒230照射雷射光束LB且形成剝離層250;晶圓剝離單元8,至少由第三保持台80及晶圓剝離手段82所構成,第三保持台80用於保持晶棒230,晶圓剝離手段82用於將保持於第三保持台80之晶棒230的上表面進行保持並從剝離層250剝離出晶圓252;匣盤9,具備晶棒支撐部117及晶圓支撐部118,晶棒支撐部117用於支撐晶棒230,晶圓支撐部118用於支撐被剝離出來的晶圓252;輸送帶單元10,將被匣盤9所支撐的晶棒230在晶棒研削單元4、雷射照射單元6及晶圓剝離單元8之間進行搬送;晶棒儲存部11,容納匣盤9所支撐的晶棒230;及晶棒授受單元12,將容納於晶棒儲存部11之匣盤9所支撐的晶棒230授受給輸送帶單元10。
此外,因為在本實施方式的晶圓生成裝置2中,各單元為獨立構成,所以可以依照素材、大小等的晶棒條件或使用者的要求等而進行各單元的數量變更。例如,藉由晶圓生成裝置2具備多台各個單元,而能同時進行相同步驟並實施,且能增加每單位時間的晶圓生成數量。此外,在晶圓生成裝置2中,比起能以相對較短時間實施步驟之單元的台數,藉由具備較多在實施步驟之相對較花時間的單元之台數,而能夠抑制步驟進行的停滯且提高生產效率。
再者,雖然說明了在本實施方式之剝離層形成步驟中,在照射雷射光束LB時,使晶棒230相對聚光點FP在與形成夾角α之方向A正交的方向上相對地移動,且在分度進給中使聚光點FP相對晶棒230在形成夾角α之方向A上相對地移動,但在照射雷射光束LB時之聚光點FP與晶棒230的相對移動方向亦可以不是與形成夾角α之方向A正交的方向,此外,在分度進給中之聚光點FP與晶棒230的相對移動方向也可以不是形成夾角α之方向A。
此外,若有需求,也可以設置晶圓研削單元,將從晶棒230剝離出來之晶圓232的剝離面252a進行研削且平坦化,並在將晶圓252的剝離面252a以晶圓研削單元進行研削且平坦化之後將晶圓252容納於卡匣198。再者,也可以設置清洗單元,將以晶棒研削單元4研削完畢之晶棒230或以晶圓研削單元研削完畢之晶圓252進行清洗。
2:晶圓生成裝置
4:晶棒研削單元
6:雷射照射單元
8:晶圓剝離單元
9:匣盤
10:輸送帶單元
11:晶棒儲存部
12:晶棒授受單元
14:第一保持台
16:研削手段
60:第二保持台
62:雷射照射手段
80:第三保持台
82:晶圓剝離手段
117:晶棒支撐部
118:晶圓支撐部
146:載置台
148:第一環狀皮帶
150:驅動力傳遞部
152:台架
160:接收台
162:第二環狀皮帶
164:馬達
166:離合器部
168:升降機
198:卡匣
200:卡匣儲存部
202:容納手段
230:晶棒
250:剝離層
252:晶圓
圖1為本發明實施方式之晶圓生成裝置的立體圖。
圖2為圖1所示之晶棒研削單元的立體圖。
圖3為圖2所示之晶棒研削單元的局部放大立體圖。
圖4為圖1所示之雷射照射單元的立體圖。
圖5為圖4所示之雷測照射手段的區塊圖。
圖6為圖1所示之晶圓剝離單元的立體圖。
圖7為圖6所示之晶圓剝離單元的局部剖面圖。
圖8為圖1所示之匣盤的立體圖。
圖9為圖1所示之晶圓生成裝置的局部立體圖。
圖10(a)為升降板位於通過位置之狀態的匣盤阻擋部的立體圖;圖10(b)為升降板位於停止位置之狀態的匣盤阻擋部的立體圖;圖10(c)為升降板位於離開位置之狀態的匣盤阻擋部的立體圖。
圖11(a)為對應圖10(a)所示之狀態的匣盤阻擋部等的剖面圖;圖11(b)為對應圖10(b)所示之狀態的匣盤阻擋部等剖面圖;圖11(c)為對應圖10(c)所示之狀態的匣盤阻擋部等的剖面圖。
圖12(a)為升降板位於上升位置之狀態的搬送手段的立體圖;圖12(b)為升降板位於下降位置之狀態的搬送手段的立體圖。
圖13為圖1所示之晶棒儲存部的立體圖。
圖14為圖1所示之晶棒授受單元的立體圖。
圖15為組合了圖13所示之晶棒儲存部與圖14所示之晶棒授受單元之狀態的立體圖。
圖16為表示離合器部之變形例的立體圖。
圖17(a)為六方單晶碳化矽(SiC)晶棒的前視圖;圖17(b)為六方單晶碳化矽(SiC)晶棒的俯視圖;圖17(c)為六方單晶碳化矽(SiC)晶棒的立體圖。
圖18為表示晶棒正被搬送至雷射照射單元之第二保持台的狀態的立體圖。
圖19(a)為表示正在實施剝離層形成步驟之狀態的立體圖;圖19(b)為正在實施剝離層形成步驟之狀態的前視圖。
圖20(a)為形成有剝離層之晶棒的俯視圖;圖20(b)為圖20(a)中之B-B線段的剖面圖。
圖21(a)為表示液槽位於晶圓剝離單元之第三保持台的上方之狀態的立體圖;圖21(b)為表示液槽之下端接觸到綁持台之上表面的狀態的立體圖。
圖22為表示藉由晶圓剝離單元從晶棒剝離出晶圓之狀態的立體圖。
2:晶圓生成裝置
4:晶棒研削單元
6:雷射照射單元
8:晶圓剝離單元
9:匣盤
10:輸送帶單元
11:晶棒儲存部
12:晶棒授受單元
14:第一保持台
16:研削手段
30:主軸外殼
32:連接片
34:升降用馬達
60:第二保持台
62:雷射照射手段
68:支撐框架
70:箱罩
80:第三保持台
82:晶圓剝離手段
88:支撐框架
90:箱罩
94:液槽
121:前行輸送帶
122:回送輸送帶
123:搬送手段
125:支撐壁
126:滾輪
127:環狀皮帶
128:馬達
129:匣盤阻擋部
135:升降板
137:Y軸可動板
141:第一轉移手段
142:第二轉移手段
143:第三轉移手段
144:多關節手臂
145:吸附片
146:載置台
148:第一環狀皮帶
152:台架
160:接收台
164:馬達
166:離合器部
168:升降機
198:卡匣
200:卡匣儲存部
202:容納手段
204:卡匣容納部
206a:導軌
208:X軸可動構件
212:升降區塊
216:多關節手臂
218:保持片
220a:螺帽部
230:晶棒
Claims (3)
- 一種晶圓生成裝置,用於從晶棒生成晶圓,其中,該晶圓生成裝置具備: 晶棒研削單元,包含第一保持台及研削手段,該第一保持台用於保持晶棒,該研削手段用於將保持於該第一保持台之晶棒的上表面進行研削且平坦化; 雷射照射單元,包含第二保持台及雷射照射手段,該第二保持台用於保持晶棒,該雷射照射手段用於將對晶棒具有穿透性波長之雷射光束的聚光點定位在相當於應從保持於該第二保持台之晶棒的上表面生成之晶圓厚度的深度,並對晶棒照射雷射光束且形成剝離層; 晶圓剝離單元,包含第三保持台及晶圓剝離手段,該第三保持台用於保持晶棒,該晶圓剝離手段用於將保持於該第三保持台之晶棒的上表面進行保持並從剝離層剝離出晶圓; 匣盤,包含晶棒支撐部及晶圓支撐部,該晶棒支撐部用於支撐晶棒,該晶圓支撐部用於支撐被剝離出來的晶圓; 輸送帶單元,將被該匣盤所支撐的晶棒在該晶棒研削單元、該雷射照射單元及該晶圓剝離單元之間進行搬送; 晶棒儲存部,容納該匣盤所支撐的晶棒;以及 晶棒授受單元,將容納於該晶棒儲存部之匣盤所支撐的晶棒授受給該輸送帶單元。
- 如申請專利範圍第1項所述之晶圓生成裝置,其中, 該晶棒儲存部包含:載置台,載置支撐晶棒的該匣盤;第一環狀皮帶,將該載置台所配設之支撐晶棒的匣盤進行輸送;驅動力傳遞部,與該第一環狀皮帶連接並傳遞驅動力;及台架,可在其上下位置配置多個該載置台; 該晶棒授受單元包含:接收台,接收來自該載置台之支撐有晶棒的匣盤;第二環狀皮帶,配設在該接收台且將支撐有晶棒的匣盤授受給該輸送帶單元;馬達,驅動該第二環狀皮帶;離合器部,與該第二環狀皮帶連接,且將驅動力傳遞給晶棒儲存部的該驅動力傳遞部;及升降機,將該接收台定位至多個配設於上下位置之該載置台。
- 如申請專利範圍第1項所述之晶圓生成裝置,其中進一步具備: 卡匣儲存部,容納有多個卡匣,該卡匣容納被剝離出來的晶圓;以及 容納手段,將被該匣盤之該晶圓支撐部所支撐的晶圓容納在卡匣,該卡匣是容納在該卡匣儲存部。
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