TW201925745A - Wafer inspection method and wafer - Google Patents
Wafer inspection method and wafer Download PDFInfo
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- TW201925745A TW201925745A TW107141576A TW107141576A TW201925745A TW 201925745 A TW201925745 A TW 201925745A TW 107141576 A TW107141576 A TW 107141576A TW 107141576 A TW107141576 A TW 107141576A TW 201925745 A TW201925745 A TW 201925745A
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/02—Details
- G01J3/0202—Mechanical elements; Supports for optical elements
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C99/00—Subject matter not provided for in other groups of this subclass
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/12—Generating the spectrum; Monochromators
- G01J3/26—Generating the spectrum; Monochromators using multiple reflection, e.g. Fabry-Perot interferometer, variable interference filters
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/41—Refractivity; Phase-affecting properties, e.g. optical path length
- G01N21/45—Refractivity; Phase-affecting properties, e.g. optical path length using interferometric methods; using Schlieren methods
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
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- G01N21/9505—Wafer internal defects, e.g. microcracks
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
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- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/001—Optical devices or arrangements for the control of light using movable or deformable optical elements based on interference in an adjustable optical cavity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1446—Devices controlled by radiation in a repetitive configuration
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
- H01L31/02165—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors using interference filters, e.g. multilayer dielectric filters
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/12—Generating the spectrum; Monochromators
- G01J2003/1213—Filters in general, e.g. dichroic, band
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- G—PHYSICS
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2201/00—Features of devices classified in G01N21/00
- G01N2201/06—Illumination; Optics
- G01N2201/061—Sources
- G01N2201/06113—Coherent sources; lasers
Abstract
Description
本發明係關於一種用以獲得法布里-佩洛干涉濾光器之晶圓、及該晶圓之檢查方法。The present invention relates to a wafer for obtaining a Fabry-Perot interference filter, and an inspection method for the wafer.
作為先前之法布里-佩洛干涉濾光器，已知有具備基板、及於基板上介隔空隙互相對向之固定鏡面及可動鏡面者(例如參照專利文獻1)。
[先前技術文獻]
[專利文獻]As a conventional Fabry-Perot interference filter, a substrate and a mirror surface and a movable mirror that are opposed to each other with a gap interposed therebetween are known (for example, see Patent Document 1).
[Previous Technical Literature]
[Patent Literature]
[專利文獻1]日本專利特表2013-506154號公報[Patent Document 1] Japanese Patent Laid-Open Publication No. 2013-506154
[發明所欲解決之問題][The problem that the invention wants to solve]
由於如上述之法布里-佩洛干涉濾光器係微細之構造體，故個別地處理並檢查經單片化之法布里-佩洛干涉濾光器並不容易，提高檢查效率較困難。又，於複數個法布里-佩洛干涉濾光器一體化之狀態下(例如晶圓狀態)，例如存在膜狀之可動鏡面破損之法布里-佩洛干涉濾光器之情形時，可知自該法布里-佩洛干涉濾光器之破損部分產生微粒，有該微粒飛散於其他法布里-佩洛干涉濾光器上，而造成不良影響之虞。Since the Fabry-Perot interference filter as described above is a fine structure, it is not easy to individually process and inspect the monolithic Fabry-Perot interference filter, and it is difficult to improve the inspection efficiency. . Further, in a state in which a plurality of Fabry-Perot interference filters are integrated (for example, a wafer state), for example, when there is a Fabry-Perot interference filter in which a film-like movable mirror is broken, It can be seen that particles are generated from the damaged portion of the Fabry-Perot interference filter, and the particles are scattered on other Fabry-Perot interference filters, causing adverse effects.
因此，本發明之目的在於提供一種謀求檢查效率之提高且可抑制破損之法布里-佩洛干涉濾光器對其他法布里-佩洛干涉濾光器造成不良影響之晶圓之檢查方法、及晶圓。
[解決問題之技術手段]Accordingly, it is an object of the present invention to provide a wafer inspection method which can improve the inspection efficiency and can suppress the damage of the Fabry-Perot interference filter which has a bad influence on other Fabry-Perot interference filters. And wafers.
[Technical means to solve the problem]
本發明之一態樣之晶圓之檢查方法包含如下步驟：準備晶圓，該晶圓具備：具有互相對向之第1表面及第2表面之基板層；具有於第1表面二維配置之複數個第1鏡面部之第1鏡面層；及具有於第1鏡面層上二維配置之複數個第2鏡面部之第2鏡面層；且藉由於互相對向之第1鏡面層之至少包含第1鏡面部之部分、及第2鏡面層之至少包含第2鏡面部之部分之間形成空隙，而構成互相對向之第1鏡面部與第2鏡面部間之距離藉由靜電力而變化之複數個法布里-佩洛干涉濾光器部；進行複數個法布里-佩洛干涉濾光器部之各者之良否判定；及對進行良否判定之步驟中判定為不良之法布里-佩洛干涉濾光器部之第2鏡面層中、自第1鏡面部與第2鏡面部互相對向之方向觀察時與空隙重疊的部分之至少一部分塗佈墨水。A method for inspecting a wafer according to an aspect of the present invention includes the steps of: preparing a wafer having: a substrate layer having a first surface and a second surface facing each other; and having a two-dimensional arrangement on the first surface a first mirror layer of the plurality of first mirror faces; and a second mirror layer having a plurality of second mirror faces disposed two-dimensionally on the first mirror layer; and at least the first mirror layer facing each other A gap is formed between a portion of the first mirror surface and a portion of the second mirror layer including at least the second mirror surface, and a distance between the first mirror portion and the second mirror portion that face each other is changed by electrostatic force. a plurality of Fabry-Perot interference filter sections; determining whether the plurality of Fabry-Perot interference filter sections are good or not; and determining a bad Fabry in the step of determining whether the quality is good or not In the second mirror layer of the pe-Perot interference filter portion, at least a part of a portion overlapping the gap when the first mirror portion and the second mirror portion face each other is coated with ink.
根據本發明之一態樣之晶圓之檢查方法，在分別成為法布里-佩洛干涉濾光器之預定之複數個法布里-佩洛干涉濾光器部一體化之狀態下(即晶圓狀態)，進行各法布里-佩洛干涉濾光器部之檢查(良否判定)。因此，與個別地檢查藉由切斷晶圓而單片化之法布里-佩洛干涉濾光器之情形相比，可更有效地進行檢查。又，上述檢查方法中，於判定為不良之法布里-佩洛干涉濾光器部中，對具有所謂膜構造之脆弱部分(即，第2鏡面層中，自第1鏡面部與第2鏡面部對向之方向觀察時與空隙重疊之部分。以下簡稱為「膜部」)之至少一部分，塗佈墨水。藉此，假設膜部破損之情形時，可抑制破損部分之捲起、自該破損部分之微粒之產生等。又，膜部未破損之情形時，亦藉由利用墨水強化該膜部，而可減低該膜部將來破損之可能性。根據以上，根據上述晶圓之檢查方法，可謀求檢查效率之提高，且抑制破損之法布里-佩洛干涉濾光器對其他法布里-佩洛干涉濾光器造成不良影響。The method for inspecting a wafer according to an aspect of the present invention is in a state in which a predetermined plurality of Fabry-Perot interference filter portions respectively forming a Fabry-Perot interference filter are integrated (ie, Wafer state), inspection of each Fabry-Perot interference filter section (good or not). Therefore, the inspection can be performed more efficiently than in the case of individually inspecting the Fabry-Perot interference filter which is singulated by cutting the wafer. Further, in the above-described inspection method, the Fabry-Perot interference filter portion which is determined to be defective has a weak portion having a so-called film structure (that is, from the first mirror portion and the second mirror layer in the second mirror layer) The ink is applied to at least a part of the portion of the "film portion" which is overlapped with the space when the mirror surface is opposed to the direction of the direction. Therefore, when the film portion is broken, it is possible to suppress the occurrence of the breakage of the damaged portion, the generation of the fine particles from the damaged portion, and the like. Further, when the film portion is not broken, the film portion can be reinforced by the ink, and the possibility that the film portion will be damaged in the future can be reduced. As described above, according to the above-described wafer inspection method, it is possible to improve the inspection efficiency and to prevent the damaged Fabry-Perot interference filter from adversely affecting other Fabry-Perot interference filters.
亦可為，於塗佈墨水之上述至少一部分，形成自第2鏡面層之與第1鏡面層為相反側之表面至空隙之貫通孔。藉此，可使墨水經由該貫通孔，自第2鏡面層滲透至內部。其結果，第2鏡面層藉由墨水而強化，可有效抑制該第2鏡面層之破損部分之捲起、自該破損部分之微粒之產生等。又，即使未於判定為不良之法布里-佩洛干涉濾光器部之膜部產生破損之情形時，亦可藉由滲透至空隙之墨水，有效減低該膜部將來破損之可能性。The through hole may be formed in at least a part of the applied ink from the surface of the second mirror layer opposite to the first mirror layer to the gap. Thereby, the ink can be infiltrated into the inside from the second mirror layer through the through hole. As a result, the second mirror layer is reinforced by the ink, and it is possible to effectively suppress the curling of the damaged portion of the second mirror layer, the generation of particles from the damaged portion, and the like. Further, even if the film portion of the Fabry-Perot interference filter portion that is determined to be defective is not damaged, the ink that has penetrated into the gap can be effectively reduced in the future.
亦可為，於塗佈墨水之步驟中，於進行良否判定之步驟中完成所有的法布里-佩洛干涉濾光器部之良否判定後，對判定為不良之一個以上法布里-佩洛干涉濾光器部依序塗佈墨水。該情形時，由於對所有法布里-佩洛干涉濾光器部之檢查(良否判定)結束後，可對判定為不良之一個以上法布里-佩洛干涉濾光器部統一進行墨水之標記，故可有效進行標記。In the step of applying the ink, in the step of determining the quality of the Fabry-Perot interference filter, the determination of the quality of the Fabry-Perot interference filter may be performed. The interference filter portion is sequentially coated with ink. In this case, after the inspection of all Fabry-Perot interference filter sections (good or bad determination) is completed, the ink can be uniformly applied to one or more Fabry-Perot interference filter sections that are determined to be defective. Marked, so it can be marked effectively.
亦可為，於塗佈墨水之步驟中，進行良否判定之步驟中，每當將1個法布里-佩洛干涉濾光器部判定為不良時，對該1個法布里-佩洛干涉濾光器部塗佈墨水。該情形時，每次發現藉由檢查判定為不良之法布里-佩洛干涉濾光器部時，即時進行對該法布里-佩洛干涉濾光器部之標記。藉此，可對有對其他法布里-佩洛干涉濾光器部造成不良影響之可能性之法布里-佩洛干涉濾光器部(例如有破損而產生微粒之可能性之法布里-佩洛干涉濾光器部)即時塗佈墨水。其結果，可更有效抑制對其他法布里-佩洛干涉濾光器部造成不良影響。In the step of applying the ink, in the step of determining whether or not the Fabry-Perot interference filter is determined to be defective, the Fabry-Perot may be used for each of the Fabry-Perot interference filters. The interference filter portion is coated with ink. In this case, each time the Fabry-Perot interference filter portion determined to be defective is found, the mark of the Fabry-Perot interference filter portion is immediately performed. Thereby, the Fabry-Perot interference filter portion having the possibility of adversely affecting other Fabry-Perot interference filter portions (for example, the possibility of generating particles due to breakage) The Perry-Perot Interference Filter section) instantly coats the ink. As a result, it is possible to more effectively suppress the adverse effects on the other Fabry-Perot interference filter sections.
墨水硬化前之狀態之黏度亦可為500 cP～50000 cP。藉由使用此種黏度之墨水，可較佳地抑制第2鏡面層之破損部分捲起、自該破損部分之微粒之產生等。The viscosity of the state before the ink is hardened may also be 500 cP to 50000 cP. By using the ink of such viscosity, it is possible to preferably suppress the occurrence of breakage of the damaged portion of the second mirror layer, generation of particles from the damaged portion, and the like.
本發明之一態樣之晶圓具備：基板層，其具有互相對向之第1表面及第2表面；第1鏡面層，其具有於第1表面二維配置之複數個第1鏡面部；及第2鏡面層，其具有於第1鏡面層上二維配置之複數個第2鏡面部；且藉由於互相對向之第1鏡面層之至少包含第1鏡面部之部分與第2鏡面層之至少包含第2鏡面部之部分之間形成空隙，而構成互相對向之第1鏡面部與第2鏡面部間之距離藉由靜電力而變化之複數個法布里-佩洛干涉濾光器部；於複數個法布里-佩洛干涉濾光器部中至少1個不良品之法布里-佩洛干涉濾光器部塗佈有墨水，於至少1個良品之法布里-佩洛干涉濾光器部未塗佈墨水。A wafer according to an aspect of the present invention includes: a substrate layer having a first surface and a second surface facing each other; and a first mirror layer having a plurality of first mirror portions disposed two-dimensionally on the first surface; And a second mirror layer having a plurality of second mirror portions disposed two-dimensionally on the first mirror layer; and a portion including the first mirror surface and the second mirror layer of the first mirror layer facing each other a plurality of Fabry-Perot interference filters are formed by forming a gap between the portions including the second mirror surface and forming a distance between the first mirror portion and the second mirror portion facing each other by electrostatic force. The Fabry-Perot interference filter portion of at least one defective product in the plurality of Fabry-Perot interference filter portions is coated with ink, and at least one good Fabri- The Pello interference filter portion is not coated with ink.
本發明之一態樣之晶圓中，由於分別成為法布里-佩洛干涉濾光器之預定之複數個法布里-佩洛干涉濾光器部成為一體化之狀態，故可有效進行對各法布里-佩洛干涉濾光器部之良否判定(檢查)。又，例如判定上述檢查結果為不良之法布里-佩洛干涉濾光器部中，於上述膜部之至少一部分塗佈有墨水。藉此，假設膜部破損之情形時，可抑制破損部分之捲起、自該破損部分之微粒之產生等。又，膜部未破損之情形時，亦藉由利用墨水強化該膜部，而減低該膜部將來破損之可能性。由上，根據上述晶圓，可謀求檢查效率之提高，且抑制破損之法布里-佩洛干涉濾光器對其他法布里-佩洛干涉濾光器造成不良影響。In the wafer of one aspect of the present invention, since a predetermined plurality of Fabry-Perot interference filter portions respectively serving as Fabry-Perot interference filters are integrated, they can be effectively performed. The quality of each Fabry-Perot interference filter is judged (checked). Further, for example, in the Fabry-Perot interference filter portion which determines that the inspection result is defective, at least a part of the film portion is coated with ink. Therefore, when the film portion is broken, it is possible to suppress the occurrence of the breakage of the damaged portion, the generation of the fine particles from the damaged portion, and the like. Further, when the film portion is not broken, the film portion is also reinforced by the ink to reduce the possibility that the film portion will be damaged in the future. From the above, according to the above wafer, it is possible to improve the inspection efficiency, and the Fabry-Perot interference filter that suppresses damage has an adverse effect on other Fabry-Perot interference filters.
亦可為，於形成於不良品之法布里-佩洛干涉濾光器部之空隙滲透有墨水。該情形時，藉由滲透於空隙之墨水，第2鏡面層對第1鏡面層固定，可有效抑制該第2鏡面層之破損部分捲起、自該破損部分之微粒之產生等。又，即使未於判定為不良之法布里-佩洛干涉濾光器部之膜部產生破損之情形時，亦可藉由滲透至空隙之墨水，有效減低該膜部將來破損之可能性。
[發明之效果]It is also possible to infiltrate the ink in the gap formed in the Fabry-Perot interference filter portion of the defective product. In this case, the second mirror layer is fixed to the first mirror layer by the ink penetrating into the gap, and the breakage of the damaged portion of the second mirror layer, the generation of particles from the damaged portion, and the like can be effectively suppressed. Further, even if the film portion of the Fabry-Perot interference filter portion that is determined to be defective is not damaged, the ink that has penetrated into the gap can be effectively reduced in the future.
[Effects of the Invention]
根據本發明，可提供一種謀求檢查效率之提高且可抑制破損之法布里-佩洛干涉濾光器對其他法布里-佩洛干涉濾光器造成不良影響之晶圓之檢查方法及晶圓。According to the present invention, it is possible to provide a wafer inspection method and crystal for improving the efficiency of inspection and suppressing breakage of a Fabry-Perot interference filter which adversely affects other Fabry-Perot interference filters. circle.
以下，參照圖式，針對本發明之實施形態進行詳細說明。再者，對各圖中相同或相當部分標註相同符號，省略重複說明。
[法布里-佩洛干涉濾光器及虛設濾光器之構成]Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In the drawings, the same or corresponding portions are denoted by the same reference numerals, and the description thereof will not be repeated.
[Composition of Fabry-Perot interference filter and dummy filter]
於說明一實施形態之晶圓之構成及該晶圓之檢查方法之前，針對自該晶圓切出之法布里-佩洛干涉濾光器及虛設濾光器之構成進行說明。Before describing the configuration of the wafer of one embodiment and the method of inspecting the wafer, the configuration of the Fabry-Perot interference filter and the dummy filter cut out from the wafer will be described.
如圖1、圖2及圖3所示，法布里-佩洛干涉濾光器1具備基板11。基板11具有互相對向之第1表面11a及第2表面11b。於第1表面11a，依序積層有抗反射層21、第1積層體22、中間層23及第2積層體24。於第1積層體22與第2積層體24之間，藉由框狀之中間層23劃定出空隙(氣隙)S。As shown in FIGS. 1 , 2 , and 3 , the Fabry-Perot interference filter 1 includes a substrate 11 . The substrate 11 has a first surface 11a and a second surface 11b that face each other. The antireflection layer 21, the first laminate 22, the intermediate layer 23, and the second laminate 24 are laminated on the first surface 11a. A gap (air gap) S is defined by the frame-shaped intermediate layer 23 between the first layered body 22 and the second layered body 24.
自垂直於第1表面11a之方向觀察之情形(俯視)時之各部之形狀及位置關係為如下。基板11之外緣例如係矩形狀。基板11之外緣及第2積層體24之外緣互相一致。抗反射層21之外緣、第1積層體22之外緣及中間層23之外緣互相一致。基板11具有位於較中間層23之外緣相對於空隙S之中心更靠外側之外緣部11c。外緣部11c例如係框狀，自垂直於第1表面11a之方向觀察之情形時包圍中間層23。空隙S例如係圓形狀。The shape and positional relationship of each portion when viewed from a direction perpendicular to the first surface 11a (plan view) are as follows. The outer edge of the substrate 11 is, for example, rectangular. The outer edge of the substrate 11 and the outer edge of the second layered body 24 coincide with each other. The outer edge of the antireflection layer 21, the outer edge of the first laminate 22, and the outer edge of the intermediate layer 23 coincide with each other. The substrate 11 has an outer edge portion 11c located on the outer edge of the intermediate layer 23 with respect to the center of the gap S. The outer edge portion 11c has a frame shape, for example, and surrounds the intermediate layer 23 when viewed from a direction perpendicular to the first surface 11a. The gap S is, for example, a circular shape.
法布里-佩洛干涉濾光器1於劃定於其中央部之光透過區域1a，使具有特定波長之光透過。光透過區域1a例如係圓柱狀之區域。基板11例如包含矽、石英或玻璃等。基板11包含矽之情形時，抗反射層21及中間層23例如包含氧化矽。中間層23之厚度例如為數十nm～數十μm。The Fabry-Perot interference filter 1 transmits light having a specific wavelength at a light-transmitting region 1a defined at a central portion thereof. The light transmission region 1a is, for example, a cylindrical region. The substrate 11 includes, for example, tantalum, quartz, glass, or the like. When the substrate 11 contains germanium, the antireflection layer 21 and the intermediate layer 23 contain, for example, cerium oxide. The thickness of the intermediate layer 23 is, for example, several tens nm to several tens of μm.
第1積層體22中對應於光透過區域1a之部分作為第1鏡面部31發揮功能。第1鏡面部31係固定鏡面。第1鏡面部31介隔抗反射層21配置於第1表面11a。第1積層體22係藉由複數個多晶矽層25與複數個氮化矽層26逐層交替積層而構成。法布里-佩洛干涉濾光器1中，多晶矽層25a、氮化矽層26a、多晶矽層25b、氮化矽層26b及多晶矽層25c依序積層於抗反射層21上。構成第1鏡面部31之多晶矽層25及氮化矽層26之各者之光學厚度較佳為中心透過波長之1/4之整數倍。再者，第1鏡面部31亦可不介隔抗反射層21而直接配置於第1表面11a上。A portion of the first layered body 22 corresponding to the light transmission region 1a functions as the first mirror portion 31. The first mirror surface portion 31 is a fixed mirror surface. The first mirror portion 31 is disposed on the first surface 11a via the anti-reflection layer 21. The first layered body 22 is formed by alternately laminating a plurality of polycrystalline germanium layers 25 and a plurality of tantalum nitride layers 26 layer by layer. In the Fabry-Perot interference filter 1, the polysilicon layer 25a, the tantalum nitride layer 26a, the polysilicon layer 25b, the tantalum nitride layer 26b, and the polysilicon layer 25c are sequentially laminated on the anti-reflection layer 21. The optical thickness of each of the polysilicon layer 25 and the tantalum nitride layer 26 constituting the first mirror portion 31 is preferably an integral multiple of 1/4 of the center transmission wavelength. Further, the first mirror surface portion 31 may be directly disposed on the first surface 11a without interposing the anti-reflection layer 21.
第2積層體24中對應於光透過區域1a之部分作為第2鏡面部32發揮功能。第2鏡面部32係可動鏡面。第2鏡面部32於相對於第1鏡面部31的基板11之相反側介隔空隙S與第1鏡面部31對向。第1鏡面部31與第2鏡面部32互相對向之方向與垂直於第1表面11a之方向平行。第2積層體24介隔抗反射層21、第1積層體22及中間層23而配置於第1表面11a。第2積層體24係藉由複數個多晶矽層27與複數個氮化矽層28逐層交替積層而構成。法布里-佩洛干涉濾光器1中，多晶矽層27a、氮化矽層28a、多晶矽層27b、氮化矽層28b及多晶矽層27c依序積層於中間層23上。構成第2鏡面部32之多晶矽層27及氮化矽層28之各者之光學厚度較佳為中心透過波長之1/4之整數倍。A portion of the second layered body 24 corresponding to the light transmitting region 1a functions as the second mirror portion 32. The second mirror portion 32 is a movable mirror surface. The second mirror surface portion 32 faces the first mirror portion 31 with a gap S interposed therebetween with respect to the opposite side of the substrate 11 of the first mirror portion 31. The direction in which the first mirror portion 31 and the second mirror portion 32 oppose each other is parallel to the direction perpendicular to the first surface 11a. The second layered body 24 is disposed on the first surface 11a via the antireflection layer 21, the first layered body 22, and the intermediate layer 23. The second layered body 24 is formed by alternately laminating a plurality of polycrystalline germanium layers 27 and a plurality of tantalum nitride layers 28 layer by layer. In the Fabry-Perot interference filter 1, the polysilicon layer 27a, the tantalum nitride layer 28a, the polysilicon layer 27b, the tantalum nitride layer 28b, and the polysilicon layer 27c are sequentially laminated on the intermediate layer 23. The optical thickness of each of the polysilicon layer 27 and the tantalum nitride layer 28 constituting the second mirror portion 32 is preferably an integral multiple of 1/4 of the center transmission wavelength.
再者，於第1積層體22及第2積層體24中，亦可取代氮化矽層，使用氧化矽層。又，作為構成第1積層體22及第2積層體24之各層之材料，亦可使用氧化鈦、氧化鉭、氧化鋯、氟化鎂、氧化鋁、氟化鈣、矽、鍺、硫化鋅等。又，此處，第1鏡面部31之空隙S側之表面(多晶矽層25c之表面)與第2鏡面部32之空隙S側之表面(多晶矽層27a之表面)介隔空隙S直接對向。但，亦可於第1鏡面部31之空隙S側之表面及第2鏡面部32之空隙S側之表面，形成(不構成鏡面之)電極層、保護層等。該情形時，第1鏡面部31及第2鏡面部32於使該等層介置於之間之狀態下，介隔空隙S互相對向。換言之，此種情形時，亦可第1鏡面部31與第2鏡面部32介隔空隙S之對向。Further, in the first layered body 22 and the second layered body 24, a tantalum oxide layer may be used instead of the tantalum nitride layer. Further, as a material constituting each layer of the first layered body 22 and the second layered body 24, titanium oxide, cerium oxide, zirconium oxide, magnesium fluoride, aluminum oxide, calcium fluoride, cerium, lanthanum, zinc sulfide, or the like may be used. . Here, the surface of the first mirror portion 31 on the side of the gap S (the surface of the polysilicon layer 25c) and the surface of the second mirror portion 32 on the side of the gap S (the surface of the polysilicon layer 27a) are directly opposed to each other via the gap S. However, an electrode layer (not including a mirror surface), a protective layer, or the like may be formed on the surface of the first mirror portion 31 on the side of the gap S and the surface of the second mirror portion 32 on the side of the gap S. In this case, the first mirror portion 31 and the second mirror portion 32 are opposed to each other with the gaps S interposed therebetween in a state in which the layers are interposed. In other words, in this case, the first mirror portion 31 and the second mirror portion 32 may be opposed to each other by the gap S.
於第2積層體24中對應於空隙S之部分(自垂直於第1表面11a之方向觀察之情形時與空隙S重疊之部分)，形成有複數個貫通孔24b。各貫通孔24b自第2積層體24之與中間層23為相反側之表面24a到達空隙S。複數個貫通孔24b以對第2鏡面部32之功能實質不帶來影響之程度形成。複數個貫通孔24b係為了藉由蝕刻除去中間層23之一部分以形成空隙S而使用。In the second layered body 24, a portion corresponding to the gap S (a portion overlapping the gap S when viewed from a direction perpendicular to the first surface 11a) is formed with a plurality of through holes 24b. Each of the through holes 24b reaches the gap S from the surface 24a of the second layered body 24 opposite to the intermediate layer 23. The plurality of through holes 24b are formed to such an extent that the function of the second mirror portion 32 is not substantially affected. The plurality of through holes 24b are used to form a space S by etching to remove a portion of the intermediate layer 23.
第2積層體24除了第2鏡面部32以外，進而具備被覆部33及周緣部34。第2鏡面部32、被覆部33及周緣部34以具有互相相同之積層構造之一部分且互相連續之方式，一體形成。被覆部33於自垂直於第1表面11a之方向觀察之情形時包圍第2鏡面部32。被覆部33被覆中間層23之與基板11為相反側之表面23a、以及中間層23之側面23b(外側之側面，即與空隙S側為相反側之側面)、第1積層體22之側面22a及抗反射層21之側面21a，並到達第1表面11a。即，被覆部33被覆中間層23之外緣、第1積層體22之外緣及抗反射層21之外緣。The second layered body 24 further includes a covering portion 33 and a peripheral portion 34 in addition to the second mirror portion 32. The second mirror surface portion 32, the covering portion 33, and the peripheral edge portion 34 are integrally formed so as to have one portion of the laminated structure that is identical to each other and continuous with each other. The covering portion 33 surrounds the second mirror portion 32 when viewed from a direction perpendicular to the first surface 11a. The covering portion 33 covers the surface 23a of the intermediate layer 23 opposite to the substrate 11, and the side surface 23b of the intermediate layer 23 (the side surface on the outer side, that is, the side surface opposite to the side of the gap S), and the side surface 22a of the first layered body 22. And the side surface 21a of the anti-reflection layer 21 reaches the first surface 11a. That is, the covering portion 33 covers the outer edge of the intermediate layer 23, the outer edge of the first laminated body 22, and the outer edge of the antireflection layer 21.
周緣部34於自垂直於第1表面11a之方向觀察之情形時，包圍被覆部33。周緣部34位於外緣部11c之第1表面11a上。周緣部34之外緣於自垂直於第1表面11a之方向觀察之情形時，與基板11之外緣一致。周緣部34沿外緣部11c之外緣被薄化。即，周緣部34中沿外緣部11c之外緣之部分與周緣部34中除沿外緣之部分外之其他部分相比更薄。法布里-佩洛干涉濾光器1中，周緣部34係藉由將構成第2積層體24之多晶矽層27及氮化矽層28之一部分除去而薄化。周緣部34具有與被覆部33連續之非薄化部34a、及包圍非薄化部34a之薄化部34b。薄化部34b中，將直接設置於第1表面11a上之多晶矽層27a以外之多晶矽層27及氮化矽層28除去。The peripheral portion 34 surrounds the covering portion 33 when viewed from a direction perpendicular to the first surface 11a. The peripheral edge portion 34 is located on the first surface 11a of the outer edge portion 11c. The outer edge of the peripheral portion 34 coincides with the outer edge of the substrate 11 when viewed from a direction perpendicular to the first surface 11a. The peripheral edge portion 34 is thinned along the outer edge of the outer edge portion 11c. That is, the portion of the peripheral edge portion 34 along the outer edge of the outer edge portion 11c is thinner than the portion of the peripheral edge portion 34 except for the portion along the outer edge. In the Fabry-Perot interference filter 1, the peripheral portion 34 is thinned by partially removing one of the polysilicon layer 27 and the tantalum nitride layer 28 constituting the second layered body 24. The peripheral edge portion 34 has a non-thinned portion 34a continuous with the covered portion 33 and a thinned portion 34b surrounding the non-thinned portion 34a. In the thinned portion 34b, the polysilicon layer 27 and the tantalum nitride layer 28 other than the polysilicon layer 27a directly provided on the first surface 11a are removed.
第1表面11a至非薄化部34a之與基板11為相反側之表面34c之高度低於第1表面11a至中間層23之表面23a之高度。第1表面11a至非薄化部34a之表面34c之高度例如為100 nm～5000 nm。第1表面11a至中間層23之表面23a之高度例如為500 nm～20000 nm。薄化部34b之寬度(自垂直於第1表面11a之方向觀察之情形時之非薄化部34a之外緣與外緣部11c之外緣間之距離)為基板11之厚度之0.01倍以上。薄化部34b之寬度例如為5 μm～400 μm。基板11之厚度例如為500 μm至800 μm。The height of the surface 34c of the first surface 11a to the non-thinned portion 34a opposite to the substrate 11 is lower than the height of the surface 23a of the first surface 11a to the intermediate layer 23. The height of the surface 34c of the first surface 11a to the non-thinned portion 34a is, for example, 100 nm to 5000 nm. The height of the surface 23a of the first surface 11a to the intermediate layer 23 is, for example, 500 nm to 20,000 nm. The width of the thinned portion 34b (the distance between the outer edge of the non-thinned portion 34a and the outer edge of the outer edge portion 11c when viewed from a direction perpendicular to the first surface 11a) is 0.01 times or more the thickness of the substrate 11. . The width of the thinned portion 34b is, for example, 5 μm to 400 μm. The thickness of the substrate 11 is, for example, 500 μm to 800 μm.
於第1鏡面部31，以自垂直於第1表面11a之方向觀察之情形時包圍光透過區域1a之方式，形成有第1電極12。第1電極12係藉由於多晶矽層25c摻雜雜質進行低電阻化而形成。於第1鏡面部31，以自垂直於第1表面11a之方向觀察之情形時包含光透過區域1a之方式，形成有第2電極13。第2電極13係藉由於多晶矽層25c摻雜雜質進行低電阻化而形成。自垂直於第1表面11a之方向觀察之情形時，第2電極13之大小較佳為包含光透過區域1a整體之大小，但亦可與光透過區域1a之大小大致相同。The first electrode portion 12 is formed on the first mirror surface portion 31 so as to surround the light transmission region 1a when viewed from a direction perpendicular to the first surface 11a. The first electrode 12 is formed by doping the polysilicon layer 25c with impurities to reduce the resistance. The second electrode 13 is formed on the first mirror surface portion 31 so as to include the light transmission region 1a when viewed from a direction perpendicular to the first surface 11a. The second electrode 13 is formed by doping the polysilicon layer 25c with impurities to reduce the resistance. When viewed from a direction perpendicular to the first surface 11a, the size of the second electrode 13 preferably includes the entire size of the light-transmitting region 1a, but may be substantially the same as the size of the light-transmitting region 1a.
於第2鏡面部32，形成有第3電極14。第3電極14介隔空隙S與第1電極12及第2電極13對向。第3電極14係藉由於多晶矽層27a摻雜雜質進行低電阻化而形成。The third electrode 14 is formed on the second mirror portion 32. The third electrode 14 faces the first electrode 12 and the second electrode 13 via the gap S. The third electrode 14 is formed by reducing the resistance of the polysilicon layer 27a by doping impurities.
一對端子15係以隔著光透過區域1a對向之方式設置。各端子15係配置於第2積層體24之表面24a至第1積層體22之貫通孔內。各端子15係經由配線12a與第1電極12電性連接。各端子15例如係藉由鋁或其合金等之金屬膜而形成。The pair of terminals 15 are provided to face each other across the light transmission region 1a. Each of the terminals 15 is disposed in the through hole of the surface 24a of the second layered body 24 to the first layered body 22. Each of the terminals 15 is electrically connected to the first electrode 12 via the wiring 12a. Each of the terminals 15 is formed, for example, by a metal film such as aluminum or an alloy thereof.
一對端子16以隔著光透過區域1a對向之方式設置。各端子16配置於第2積層體24之表面24a至第1積層體22之貫通孔內。各端子16經由配線13a與第2電極13電性連接，且經由配線14a與第3電極14電性連接。端子16例如係藉由鋁或其合金等之金屬膜而形成。一對端子15對向之方向與一對端子16對向之方向正交(參照圖1)。The pair of terminals 16 are disposed to face each other across the light transmitting region 1a. Each of the terminals 16 is disposed in the through hole of the surface 24a of the second layered body 24 to the first layered body 22. Each of the terminals 16 is electrically connected to the second electrode 13 via the wiring 13a, and is electrically connected to the third electrode 14 via the wiring 14a. The terminal 16 is formed, for example, by a metal film such as aluminum or an alloy thereof. The direction in which the pair of terminals 15 oppose is orthogonal to the direction in which the pair of terminals 16 oppose each other (see FIG. 1).
於第1積層體22之表面22b，設有複數個溝槽17、18。溝槽17以包圍配線13a中與端子16之連接部分之方式呈環狀延伸。溝槽17將第1電極12與配線13a電性絕緣。溝槽18沿第1電極12之內緣呈環狀延伸。溝槽18沿第1電極12之內緣呈環狀延伸。溝槽18將第1電極12與第1電極12內側之區域(第2電極13)電性絕緣。各溝槽17、18內之區域可為絕緣材料，亦可為空隙。A plurality of grooves 17, 18 are provided on the surface 22b of the first layered body 22. The groove 17 extends in a ring shape so as to surround the connection portion of the wiring 13a with the terminal 16. The trench 17 electrically insulates the first electrode 12 from the wiring 13a. The groove 18 extends in a ring shape along the inner edge of the first electrode 12. The groove 18 extends in a ring shape along the inner edge of the first electrode 12. The trench 18 electrically insulates the first electrode 12 from the region inside the first electrode 12 (the second electrode 13). The area in each of the grooves 17, 18 may be an insulating material or a void.
於第2積層體24之表面24a，設有溝槽19。溝槽19以包圍端子15之方式呈環狀延伸。溝槽19將端子15與第3電極14電性絕緣。溝槽19內之區域可為絕緣材料，亦可為空隙。A groove 19 is provided on the surface 24a of the second layered body 24. The groove 19 extends in a ring shape so as to surround the terminal 15. The trench 19 electrically insulates the terminal 15 from the third electrode 14. The area within the trench 19 can be an insulating material or a void.
於基板11之第2表面11b，依序積層有抗反射層41、第3積層體42、中間層43及第4積層體44。抗反射層41及中間層43各自具有與抗反射層21及中間層23相同之構成。第3積層體42及第4積層體44各自具有以基板11為基準，與第1積層體22及第2積層體24對稱之積層構造。抗反射層41、第3積層體42、中間層43及第4積層體44具有抑制基板11之翹曲之功能。The anti-reflection layer 41, the third layered body 42, the intermediate layer 43, and the fourth layered body 44 are sequentially laminated on the second surface 11b of the substrate 11. Each of the antireflection layer 41 and the intermediate layer 43 has the same configuration as the antireflection layer 21 and the intermediate layer 23. Each of the third layered body 42 and the fourth layered body 44 has a laminated structure that is symmetrical with the first layered body 22 and the second layered body 24 with respect to the substrate 11 . The antireflection layer 41, the third layered body 42, the intermediate layer 43, and the fourth layered body 44 have a function of suppressing warpage of the substrate 11.
第3積層體42、中間層43及第4積層體44沿外緣部11c之外緣薄化。即，第3積層體42、中間層43及第4積層體44中沿外緣部11c之外緣之部分與第3積層體42、中間層43及第4積層體44中除沿外緣之部分外之其他部相比更薄。法布里-佩洛干涉濾光器1中，第3積層體42、中間層43及第4積層體44係藉由於自垂直於第1表面11a之方向觀察之情形時與薄化部34b重疊之部分，將第3積層體42、中間層43及第4積層體44之全部除去而薄化。The third layered body 42, the intermediate layer 43, and the fourth layered body 44 are thinned along the outer edge of the outer edge portion 11c. In other words, in the third layered body 42, the intermediate layer 43, and the fourth layered body 44, the portion along the outer edge of the outer edge portion 11c and the third layered body 42, the intermediate layer 43, and the fourth layered body 44 are excluded from the outer edge. The other parts are thinner than others. In the Fabry-Perot interference filter 1, the third layered body 42, the intermediate layer 43, and the fourth layered body 44 are overlapped with the thinned portion 34b when viewed from a direction perpendicular to the first surface 11a. In the portion, all of the third layered body 42, the intermediate layer 43, and the fourth layered body 44 are removed and thinned.
於第3積層體42、中間層43及第4積層體44，以自垂直於第1表面11a之方向觀察之情形時包含光透過區域1a之方式，設有開口40a。開口40a具有與光透過區域1a之大小大致相同之直徑。開口40a於光出射側開口。開口40a之底面到達抗反射層41。The third layered body 42, the intermediate layer 43, and the fourth layered body 44 are provided with an opening 40a so as to include the light transmitting region 1a when viewed from a direction perpendicular to the first surface 11a. The opening 40a has a diameter substantially the same as the size of the light transmitting region 1a. The opening 40a is open on the light exit side. The bottom surface of the opening 40a reaches the anti-reflection layer 41.
於第4積層體44之光出射側之表面，形成有遮光層45。遮光層45例如包含鋁等。於遮光層45之表面及開口40a之內表面，形成有保護層46。保護層46被覆第3積層體42、中間層43、第4積層體44及遮光層45之外緣，且被覆外緣部11c上之抗反射層41。保護層46例如包含氧化鋁。再者，藉由將保護層46之厚度設為1 nm～100 nm(較佳為30 nm左右)，而可忽視保護層46帶來之光學影響。A light shielding layer 45 is formed on the surface of the fourth laminate body 44 on the light exit side. The light shielding layer 45 contains, for example, aluminum or the like. A protective layer 46 is formed on the surface of the light shielding layer 45 and the inner surface of the opening 40a. The protective layer 46 covers the outer edges of the third layered body 42, the intermediate layer 43, the fourth layered body 44, and the light shielding layer 45, and covers the antireflection layer 41 on the outer edge portion 11c. The protective layer 46 contains, for example, alumina. Furthermore, by setting the thickness of the protective layer 46 to 1 nm to 100 nm (preferably about 30 nm), the optical influence of the protective layer 46 can be ignored.
於如上構成之法布里-佩洛干涉濾光器1中，若經由一對端子15、16對第1電極12與第3電極14之間施加電壓，則於第1電極12與第3電極14之間產生對應於該電壓之靜電力。藉由該靜電力，第2鏡面部32被吸引至固定於基板11之第1鏡面部31側，而調整第1鏡面部31與第2鏡面部32間之距離。如此，於法布里-佩洛干涉濾光器1中，第1鏡面部31與第2鏡面部32間之距離藉由靜電力而變化。In the Fabry-Perot interference filter 1 configured as described above, when a voltage is applied between the first electrode 12 and the third electrode 14 via the pair of terminals 15 and 16, the first electrode 12 and the third electrode are applied to the first electrode 12 and the third electrode. An electrostatic force corresponding to the voltage is generated between 14. By the electrostatic force, the second mirror portion 32 is attracted to the side of the first mirror portion 31 fixed to the substrate 11, and the distance between the first mirror portion 31 and the second mirror portion 32 is adjusted. As described above, in the Fabry-Perot interference filter 1, the distance between the first mirror portion 31 and the second mirror portion 32 is changed by the electrostatic force.
透過法布里-佩洛干涉濾光器1之光之波長依存於光透過區域1a之第1鏡面部31與第2鏡面部32間之距離。因此，可藉由調整施加於第1電極12與第3電極14間之電壓，而適當選擇透過之光的波長。此時，第2電極13與第3電極14為相同電位。因此，第2電極13作為光透過區域1a中用以將第1鏡面部31及第2鏡面部32保持平坦之補償電極發揮功能。The wavelength of the light transmitted through the Fabry-Perot interference filter 1 depends on the distance between the first mirror portion 31 and the second mirror portion 32 of the light transmitting region 1a. Therefore, the wavelength of the transmitted light can be appropriately selected by adjusting the voltage applied between the first electrode 12 and the third electrode 14. At this time, the second electrode 13 and the third electrode 14 have the same potential. Therefore, the second electrode 13 functions as a compensation electrode for keeping the first mirror portion 31 and the second mirror portion 32 flat in the light transmission region 1a.
於法布里-佩洛干涉濾光器1中，例如藉由一面使施加於法布里-佩洛干涉濾光器1之電壓變化(即，使法布里-佩洛干涉濾光器1中第1鏡面部31與第2鏡面部32間之距離變化)，一面藉由光檢測器檢測透過法布里-佩洛干涉濾光器1之光透過區域1a之光，而可獲得分光光譜。In the Fabry-Perot interference filter 1, the voltage applied to the Fabry-Perot interference filter 1 is changed, for example, by one side (ie, the Fabry-Perot interference filter 1 is made) When the distance between the first mirror portion 31 and the second mirror portion 32 is changed, the light passing through the light transmitting region 1a of the Fabry-Perot interference filter 1 is detected by the photodetector, and the spectral spectrum can be obtained. .
如圖4所示，虛設濾光器2與上述之法布里-佩洛干涉濾光器1之不同點在於，於第2積層體24未形成複數個貫通孔24b，及於中間層23未形成空隙S。虛設濾光器2中，於第1鏡面部31與第2鏡面部32之間設有中間層23。即，第2鏡面部32未於空隙S上懸空，而配置於中間層23之表面23a。
[晶圓之構成]As shown in FIG. 4, the dummy filter 2 is different from the above-described Fabry-Perot interference filter 1 in that a plurality of through holes 24b are not formed in the second laminated body 24, and the intermediate layer 23 is not formed. A void S is formed. In the dummy filter 2, an intermediate layer 23 is provided between the first mirror portion 31 and the second mirror portion 32. In other words, the second mirror portion 32 is not suspended in the gap S, but is disposed on the surface 23a of the intermediate layer 23.
[Structure of Wafer]
繼而，針對一實施形態之晶圓之構成進行說明。如圖5及圖6所示，晶圓100具備基板層110。基板層110例如呈圓板狀之形狀，於其一部分形成有定向平面OF。基板層110例如包含矽、石英或玻璃等。以下，將自基板層110之厚度方向觀察之情形時通過基板層110之中心且與定向平面OF平行之假想直線稱為第1直線3，將自基板層110之厚度方向觀察之情形時通過基板層110之中心且與定向平面OF垂直之假想直線稱為第2直線4。Next, the configuration of a wafer of one embodiment will be described. As shown in FIGS. 5 and 6 , the wafer 100 includes a substrate layer 110 . The substrate layer 110 has, for example, a disk shape, and an orientation plane OF is formed in a part thereof. The substrate layer 110 includes, for example, tantalum, quartz, glass, or the like. Hereinafter, the imaginary straight line passing through the center of the substrate layer 110 and parallel to the orientation plane OF when viewed from the thickness direction of the substrate layer 110 is referred to as a first straight line 3, and is passed through the substrate when viewed from the thickness direction of the substrate layer 110. The imaginary straight line at the center of the layer 110 and perpendicular to the orientation plane OF is called the second straight line 4.
於晶圓100，設有有效區域101及虛設區域102。虛設區域102係沿基板層110之外緣110c(即，晶圓100之外緣100a)之區域。有效區域101係虛設區域102之內側之區域。虛設區域102於自基板層110之厚度方向觀察之情形時，包圍有效區域101。虛設區域102與有效區域101鄰接。In the wafer 100, an effective area 101 and a dummy area 102 are provided. The dummy region 102 is along the region of the outer edge 110c of the substrate layer 110 (ie, the outer edge 100a of the wafer 100). The effective area 101 is an area inside the dummy area 102. The dummy region 102 surrounds the effective region 101 when viewed from the thickness direction of the substrate layer 110. The dummy area 102 is adjacent to the effective area 101.
於有效區域101，設有二維配置之複數個法布里-佩洛干涉濾光器部1A。複數個法布里-佩洛干涉濾光器部1A係設置於有效區域101之整體。於虛設區域102，設有二維配置之複數個虛設濾光器部2A。複數個虛設濾光器部2A係設置於虛設區域102中除一對區域102a外之區域。一區域102a係沿定向平面OF之區域。另一區域102a係沿基板層110之外緣110c中定向平面OF之相反側之部分之區域。於有效區域101與虛設區域102之交界部分，法布里-佩洛干涉濾光器部1A與虛設濾光器部2A鄰接。自基板層110之厚度方向觀察之情形時，法布里-佩洛干涉濾光器部1A之外形與虛設濾光器部2A之外形相同。複數個法布里-佩洛干涉濾光器部1A及複數個虛設濾光器部2A以相對於互相正交之第1直線3及第2直線4之各者對稱之方式配置。再者，複數個虛設濾光器部2A亦可設置於虛設區域102之整體。又，複數個虛設濾光器部2A亦可設置於虛設區域102中除任一區域102a外之區域。In the effective area 101, a plurality of Fabry-Perot interference filter sections 1A arranged in two dimensions are provided. A plurality of Fabry-Perot interference filter sections 1A are provided in the entirety of the effective area 101. In the dummy area 102, a plurality of dummy filter portions 2A arranged in two dimensions are provided. The plurality of dummy filter portions 2A are provided in a region other than the pair of regions 102a in the dummy region 102. A region 102a is an area along the orientation plane OF. The other region 102a is an area of a portion of the outer edge 110c of the substrate layer 110 that is oriented on the opposite side of the plane OF. At the boundary portion between the effective region 101 and the dummy region 102, the Fabry-Perot interference filter portion 1A is adjacent to the dummy filter portion 2A. When viewed from the thickness direction of the substrate layer 110, the Fabry-Perot interference filter portion 1A has the same outer shape as the dummy filter portion 2A. The plurality of Fabry-Perot interference filter sections 1A and the plurality of dummy filter sections 2A are arranged symmetrically with respect to each of the first straight line 3 and the second straight line 4 which are orthogonal to each other. Furthermore, the plurality of dummy filter portions 2A may be disposed on the entirety of the dummy region 102. Further, the plurality of dummy filter portions 2A may be provided in an area other than any of the regions 102a in the dummy region 102.
複數個法布里-佩洛干涉濾光器部1A係藉由將晶圓100沿各線5切斷，而成為複數個法布里-佩洛干涉濾光器1之預定之部分。複數個虛設濾光器部2A係藉由將晶圓100沿各線5切斷，而成為複數個虛設濾光器2之預定之部分。自基板層110之厚度方向觀察之情形時，複數條線5以沿與定向平面OF平行之方向之方式延伸，複數條線5以沿與定向平面OF垂直之方向之方式延伸。作為一例，自基板層110之厚度方向觀察之情形時，各濾光器部1A、2A呈矩形狀時，各濾光器部1A、2A呈二維矩陣狀配置，複數條線5以通過相鄰之濾光器部1A、1A間、相鄰之濾光器部1A、2A間、及相鄰之濾光器部2A、2A間之方式，設定為格子狀。The plurality of Fabry-Perot interference filter sections 1A are predetermined portions of the plurality of Fabry-Perot interference filters 1 by cutting the wafer 100 along the respective lines 5. The plurality of dummy filters 2A are cut by the respective lines 5 to form a predetermined portion of the plurality of dummy filters 2. When viewed from the thickness direction of the substrate layer 110, the plurality of lines 5 extend in a direction parallel to the orientation plane OF, and the plurality of lines 5 extend in a direction perpendicular to the orientation plane OF. As an example, when each of the filter portions 1A and 2A has a rectangular shape when viewed in the thickness direction of the substrate layer 110, each of the filter portions 1A and 2A is arranged in a two-dimensional matrix, and the plurality of lines 5 pass through the phase. The mode between the adjacent filter portions 1A and 1A, between the adjacent filter portions 1A and 2A, and between the adjacent filter portions 2A and 2A is set in a lattice shape.
圖7(a)係法布里-佩洛干涉濾光器部1A之剖視圖，圖7(b)係虛設濾光器部2A之剖視圖。如圖7(a)及(b)所示，基板層110係藉由將晶圓100沿各線5切斷，而成為複數個基板11之預定之層。基板層110具有互相對向之第1表面110a及第2表面110b。於基板層110之第1表面110a，設有抗反射層210。抗反射層210係藉由將晶圓100沿各線5切斷，而成為複數個抗反射層21之預定之層。於基板層110之第2表面110b，設有抗反射層410。抗反射層410係藉由將晶圓100沿各線5切斷，而成為複數個抗反射層41之預定之層。Fig. 7(a) is a cross-sectional view of the Fabry-Perot interference filter portion 1A, and Fig. 7(b) is a cross-sectional view of the dummy filter portion 2A. As shown in FIGS. 7(a) and 7(b), the substrate layer 110 is cut along the respective lines 5 to form a predetermined layer of the plurality of substrates 11. The substrate layer 110 has a first surface 110a and a second surface 110b that face each other. An anti-reflection layer 210 is provided on the first surface 110a of the substrate layer 110. The anti-reflection layer 210 is a predetermined layer of the plurality of anti-reflection layers 21 by cutting the wafer 100 along each line 5. An anti-reflection layer 410 is provided on the second surface 110b of the substrate layer 110. The anti-reflection layer 410 is a predetermined layer of the plurality of anti-reflection layers 41 by cutting the wafer 100 along each line 5.
於抗反射層210上，設有器件層200。器件層200具有第1鏡面層220、中間層230、及第2鏡面層240。第1鏡面層220係具有複數個第1鏡面部31之層，且係藉由將晶圓100沿各線5切斷而成為複數個第1積層體22之預定之層。複數個第1鏡面部31介隔抗反射層210而二維配置於基板層110之第1表面110a。中間層230係藉由將晶圓100沿各線5切斷，成為複數個中間層23之預定之層。第2鏡面層240係具有複數個第2鏡面部32之層，且係藉由將晶圓100沿各線5切斷，而成為複數個第2積層體24之預定之層。複數個第2鏡面部32經由中間層23，二維配置於第1鏡面層220上。On the anti-reflection layer 210, a device layer 200 is provided. The device layer 200 has a first mirror layer 220, an intermediate layer 230, and a second mirror layer 240. The first mirror layer 220 has a plurality of layers of the first mirror portion 31, and is formed by cutting the wafer 100 along each line 5 to form a predetermined layer of the plurality of first layered bodies 22. The plurality of first mirror portions 31 are two-dimensionally disposed on the first surface 110a of the substrate layer 110 via the anti-reflection layer 210. The intermediate layer 230 is cut along the lines 5 to form a predetermined layer of the plurality of intermediate layers 23. The second mirror layer 240 is a layer having a plurality of second mirror portions 32, and is formed by cutting the wafer 100 along each line 5 to form a predetermined layer of the plurality of second laminates 24. The plurality of second mirror portions 32 are two-dimensionally arranged on the first mirror layer 220 via the intermediate layer 23.
於抗反射層410上，設有應力調整層400。即，應力調整層400介隔抗反射層410設置於基板層110之第2表面110b。應力調整層400具有複數個層420、430、440。層420係藉由將晶圓100沿各線5切斷，成為複數個第3積層體42之預定之層。層430係藉由將晶圓100沿各線5切斷，成為複數個中間層43之預定之層。層440係藉由將晶圓100沿各線5切斷，成為複數個第4積層體44之預定之層。A stress adjustment layer 400 is provided on the anti-reflection layer 410. That is, the stress adjustment layer 400 is provided on the second surface 110b of the substrate layer 110 via the anti-reflection layer 410. The stress adjustment layer 400 has a plurality of layers 420, 430, 440. The layer 420 is cut along the lines 5 to form a predetermined layer of the plurality of third layered bodies 42. The layer 430 is cut into a predetermined layer of a plurality of intermediate layers 43 by cutting the wafer 100 along each line 5. The layer 440 is cut along the lines 5 to form a predetermined layer of the plurality of fourth layered bodies 44.
於應力調整層400上，設有遮光層450及保護層460。遮光層450係藉由將晶圓100沿各線5切斷，成為複數個遮光層45之預定之層。保護層460係藉由將晶圓100沿各線5切斷，成為複數個保護層46之預定之層。A light shielding layer 450 and a protective layer 460 are provided on the stress adjustment layer 400. The light shielding layer 450 is cut along the respective lines 5 to form a predetermined layer of the plurality of light shielding layers 45. The protective layer 460 is formed by cutting the wafer 100 along each line 5 to form a predetermined layer of the plurality of protective layers 46.
如圖7(a)所示，於各法布里-佩洛干涉濾光器部1A中，於互相對向之第1鏡面層220之至少包含第1鏡面部31之部分與第2鏡面層240之至少包含第2鏡面部32之部分之間，形成有空隙S。即，於各法布里-佩洛干涉濾光器部1A中，中間層23劃定出空隙S，第2鏡面部32於空隙S上懸空。如圖1所示，於本實施形態中，自第1鏡面部31與第2鏡面部32互相對向之方向(以下，簡稱為「對向方向」)觀察之情形時，空隙S形成較光透過區域1a大一圈之圓形區域。於各法布里-佩洛干涉濾光器部1A中，與上述法布里-佩洛干涉濾光器1之構成同樣地，設有與第1電極12、第2電極13、第3電極14、複數個端子15、16及開口40a等相關之構成。因此，複數個法布里-佩洛干涉濾光器部1A即便對於晶圓100，若經由一對端子15、16對各法布里-佩洛干涉濾光器部1A施加電壓，則互相對向之第1鏡面部31與第2鏡面部32間之距離亦會藉由靜電力而變化。As shown in Fig. 7 (a), in each of the Fabry-Perot interference filter portions 1A, at least the first mirror portion 31 and the second mirror layer are provided on the first mirror layer 220 facing each other. A gap S is formed between the portions of the 240 including at least the second mirror portion 32. That is, in each of the Fabry-Perot interference filter portions 1A, the intermediate layer 23 defines the gap S, and the second mirror portion 32 is suspended in the gap S. As shown in Fig. 1, in the present embodiment, when the first mirror portion 31 and the second mirror portion 32 are opposed to each other (hereinafter, simply referred to as "opposite direction"), the gap S is formed into a light. A circular area that passes through a large circle of area 1a. The Fabry-Perot interference filter unit 1A is provided with the first electrode 12, the second electrode 13, and the third electrode in the same manner as the Fabry-Perot interference filter 1 described above. 14. A plurality of terminals 15, 16 and an opening 40a and the like. Therefore, even if a plurality of Fabry-Perot interference filter sections 1A apply voltage to each Fabry-Perot interference filter section 1A via the pair of terminals 15 and 16, the wafers 100A are mutually opposed. The distance between the first mirror portion 31 and the second mirror portion 32 also changes by the electrostatic force.
如圖7(b)所示，於各虛設濾光器部2A中，於互相對向之第1鏡面部31與第2鏡面部32間設有中間層23。即，於虛設濾光器部2A中，中間層23未劃定空隙S，第2鏡面部32配置於中間層23之表面23a。因此，於各虛設濾光器部2A中，雖與上述虛設濾光器2之構成同樣地，設有與第1電極12、第2電極13、第3電極14、複數個端子15、16及開口40a等相關之構成，但互相對向之第1鏡面部31與第2鏡面部32間之距離不變化。再者，亦可不於各虛設濾光器部2A，設置與第1電極12、第2電極13、第3電極14、複數個端子15、16(構成各端子15、16之鋁等之金屬膜、用以配置各端子15、16之貫通孔等)及開口40a等相關之構成。As shown in FIG. 7(b), in each of the dummy filter portions 2A, an intermediate layer 23 is provided between the first mirror portion 31 and the second mirror portion 32 which face each other. That is, in the dummy filter portion 2A, the intermediate layer 23 is not defined with the gap S, and the second mirror portion 32 is disposed on the surface 23a of the intermediate layer 23. Therefore, in the dummy filter unit 2A, similarly to the configuration of the dummy filter 2, the first electrode 12, the second electrode 13, the third electrode 14, and the plurality of terminals 15 and 16 are provided. The opening 40a and the like are configured, but the distance between the first mirror portion 31 and the second mirror portion 32 that do not face each other does not change. Further, the first electrode 12, the second electrode 13, the third electrode 14, and the plurality of terminals 15 and 16 (the metal film constituting the aluminum of each of the terminals 15 and 16) may be provided instead of the dummy filter portion 2A. The configuration is such as to arrange the through holes of the terminals 15 and 16 and the openings 40a.
如圖6及圖7(a)所示，於器件層200，形成有於與基板層110為相反側開口之第1槽290。第1槽290係沿各線5形成。第1槽290係沿各線5形成。第1槽290於各法布里-佩洛干涉濾光器部1A及各虛設濾光器部2A中，包圍第1鏡面部31、中間層23及第2鏡面部32。於各法布里-佩洛干涉濾光器部1A中，第1鏡面部31、中間層23及第2鏡面部32係由呈環狀連續之第1槽290包圍。同樣地，於各虛設濾光器部2A中，第1鏡面部31、中間層23及第2鏡面部32係由呈環狀連續之第1槽290包圍。若著眼於相鄰之濾光器部1A、1A、相鄰之濾光器部1A、2A及相鄰之濾光器部2A、2A，則第1槽290與一濾光器部之周緣部34及另一濾光器部之周緣部34上之區域對應。第1槽290於有效區域101及虛設區域102中連接，自對向方向觀察之情形時，到達基板層110之外緣110c。再者，第1槽290於各法布里-佩洛干涉濾光器部1A及各虛設濾光器部2A中，只要至少包圍第2鏡面部32即可。As shown in FIG. 6 and FIG. 7(a), in the device layer 200, a first trench 290 which is opened on the side opposite to the substrate layer 110 is formed. The first groove 290 is formed along each line 5. The first groove 290 is formed along each line 5. The first groove 290 surrounds the first mirror portion 31, the intermediate layer 23, and the second mirror portion 32 in each of the Fabry-Perot interference filter portion 1A and each of the dummy filter portions 2A. In each of the Fabry-Perot interference filter units 1A, the first mirror portion 31, the intermediate layer 23, and the second mirror portion 32 are surrounded by a first groove 290 that is continuous in a ring shape. Similarly, in each of the dummy filter portions 2A, the first mirror portion 31, the intermediate layer 23, and the second mirror portion 32 are surrounded by the first groove 290 which is continuous in a ring shape. Focusing on the adjacent filter portions 1A, 1A, the adjacent filter portions 1A, 2A, and the adjacent filter portions 2A, 2A, the first groove 290 and the peripheral portion of a filter portion 34 corresponds to a region on the peripheral portion 34 of the other filter portion. The first groove 290 is connected to the effective region 101 and the dummy region 102, and reaches the outer edge 110c of the substrate layer 110 when viewed from the opposite direction. In addition, the first groove 290 may surround at least the second mirror portion 32 in each of the Fabry-Perot interference filter portion 1A and each of the dummy filter portions 2A.
如圖7(b)所示，於應力調整層400，形成有於與基板層110為相反側開口之第2槽470。第2槽470係沿各線5形成。即，第2槽470係以對應於第1槽290之方式形成。此處，所謂第2槽470對應於第1槽290，意指自對向方向觀察之情形時，第2槽470與第1槽290重疊。因此，第2槽470於有效區域101及虛設區域102中連接，自對向方向觀察之情形時，到達基板層110之外緣110c。
[晶圓之製造方法]As shown in FIG. 7(b), in the stress adjustment layer 400, a second groove 470 which is opened on the side opposite to the substrate layer 110 is formed. The second groove 470 is formed along each line 5. That is, the second groove 470 is formed to correspond to the first groove 290. Here, the second groove 470 corresponds to the first groove 290, and means that the second groove 470 overlaps with the first groove 290 when viewed from the opposite direction. Therefore, the second groove 470 is connected to the effective region 101 and the dummy region 102, and reaches the outer edge 110c of the substrate layer 110 when viewed from the opposite direction.
[Method of manufacturing wafers]
繼而，針對晶圓100之製作方法，參照圖8～圖13進行說明。圖8～圖13中，(a)係對應於法布里-佩洛干涉濾光器部1A之部分之剖視圖，(b)係對應於虛設濾光器部2A之部分之剖視圖。Next, a method of fabricating the wafer 100 will be described with reference to FIGS. 8 to 13 . In FIGS. 8 to 13, (a) is a cross-sectional view corresponding to a portion of the Fabry-Perot interference filter portion 1A, and (b) is a cross-sectional view corresponding to a portion of the dummy filter portion 2A.
首先，如圖8所示，於基板層110之第1表面110a形成抗反射層210，且於基板層110之第2表面110b形成抗反射層410。繼而，藉由於各抗反射層210、410上，交替積層複數個多晶矽層及複數個氮化矽層，而於抗反射層210上形成第1鏡面層220，且於抗反射層410上形成層420。First, as shown in FIG. 8, an anti-reflection layer 210 is formed on the first surface 110a of the substrate layer 110, and an anti-reflection layer 410 is formed on the second surface 110b of the substrate layer 110. Then, a plurality of polysilicon layers and a plurality of tantalum nitride layers are alternately laminated on each of the anti-reflective layers 210 and 410, and a first mirror layer 220 is formed on the anti-reflection layer 210, and a layer is formed on the anti-reflection layer 410. 420.
形成第1鏡面層220時，以藉由蝕刻，抗反射層210之表面露出之方式，將第1鏡面層220中沿各線5之部分除去。又，藉由雜質摻雜，使第1鏡面層220之特定之多晶矽層部分地低電阻化，從而每個對應於基板11之部分，形成第1電極12、第2電極13及配線12a、13a。再者，藉由蝕刻，每個對應於基板11之部分，於第1鏡面層220之表面形成溝槽17、18。When the first mirror layer 220 is formed, portions of the first mirror layer 220 along the respective lines 5 are removed by etching to expose the surface of the antireflection layer 210. Further, by doping the impurities, the specific polysilicon layer of the first mirror layer 220 is partially reduced in resistance, and the first electrode 12, the second electrode 13, and the wirings 12a and 13a are formed for each portion corresponding to the substrate 11. . Further, grooves 17 and 18 are formed on the surface of the first mirror layer 220 by etching each of the portions corresponding to the substrate 11.
繼而，如圖9所示，於第1鏡面層220上，及露出之抗反射層210之表面，形成中間層230，且於層420上形成層430。於對應於各法布里-佩洛干涉濾光器部1A之部分中，中間層230包含對應於空隙S(參照圖3)之除去預定部50。繼而，以藉由蝕刻，基板層110之第1表面110a露出之方式，將中間層230及抗反射層210中沿各線5之部分除去。又，藉由該蝕刻，每個對應於基板11之部分，於中間層230中對應於各端子15、16(參照圖3)之部分，形成空隙。Then, as shown in FIG. 9, an intermediate layer 230 is formed on the first mirror layer 220 and on the surface of the exposed anti-reflection layer 210, and a layer 430 is formed on the layer 420. In a portion corresponding to each Fabry-Perot interference filter portion 1A, the intermediate layer 230 includes a removal predetermination portion 50 corresponding to the gap S (refer to FIG. 3). Then, the intermediate layer 230 and the anti-reflection layer 210 are removed along the respective lines 5 by etching so that the first surface 110a of the substrate layer 110 is exposed. Further, by this etching, a portion corresponding to the substrate 11 is formed in a portion of the intermediate layer 230 corresponding to each of the terminals 15 and 16 (see FIG. 3).
繼而，如圖10所示，於基板層110之第1表面110a側及第2表面110b側之各者中，藉由將複數個多晶矽層及複數個氮化矽層交替積層，而於中間層230上及露出之基板層110之第1表面110a，形成第2鏡面層240，且於層430上形成層440。Then, as shown in FIG. 10, in each of the first surface 110a side and the second surface 110b side of the substrate layer 110, a plurality of polycrystalline germanium layers and a plurality of tantalum nitride layers are alternately laminated to form an intermediate layer. A second mirror layer 240 is formed on the first surface 110a of the substrate layer 110 and the exposed substrate layer 230, and a layer 440 is formed on the layer 430.
形成第2鏡面層240時，將沿線5互相對向之中間層230之側面230a、第1鏡面層220之側面220a及抗反射層210之側面210a，以第2鏡面層240被覆。又，藉由雜質摻雜，使第2鏡面層240之特定之多晶矽層部分地低電阻化，從而每個對應於基板11之部分，形成第3電極14及配線14a。When the second mirror layer 240 is formed, the side surface 230a of the intermediate layer 230, the side surface 220a of the first mirror layer 220, and the side surface 210a of the anti-reflection layer 210, which are opposed to each other along the line 5, are covered by the second mirror layer 240. Further, by doping with impurities, the specific polysilicon layer of the second mirror layer 240 is partially reduced in resistance, and the third electrode 14 and the wiring 14a are formed for each portion corresponding to the substrate 11.
繼而，如圖11所示，以藉由蝕刻，第2鏡面層240所含之多晶矽層27a(參照圖3)(即，位於最第1表面110a側之多晶矽層)之表面露出之方式，將第2鏡面層240中沿各線5之部分薄化。又，藉由該蝕刻，每個對應於基板11之部分，於第2鏡面層240中對應於各端子15、16(參照圖3)之部分，形成空隙。繼而，每個對應於基板11之部分，於該空隙形成各端子15、16，將各端子15及配線12a連接，且將各端子16、配線13a及配線14a之各者連接。Then, as shown in FIG. 11, the surface of the polysilicon layer 27a (see FIG. 3) included in the second mirror layer 240 (that is, the polysilicon layer on the side of the most first surface 110a) is exposed by etching. The portion of the second mirror layer 240 along each line 5 is thinned. Further, by this etching, a portion corresponding to the substrate 11 is formed in a portion corresponding to each of the terminals 15 and 16 (see FIG. 3) in the second mirror layer 240. Then, each of the terminals 15 and 16 is formed in the space corresponding to the portion of the substrate 11, and the terminals 15 and the wiring 12a are connected, and each of the terminals 16, the wiring 13a, and the wiring 14a are connected.
至此為止，於基板層110之第1表面110a，形成抗反射層210及器件層200，且於器件層200形成第1槽290。第1槽290係器件層200沿各線5部分地薄化之區域。Up to this point, the anti-reflection layer 210 and the device layer 200 are formed on the first surface 110a of the substrate layer 110, and the first trench 290 is formed in the device layer 200. The first trench 290 is a region in which the device layer 200 is partially thinned along each line 5.
繼而，如圖12(a)所示，於對應於各法布里-佩洛干涉濾光器部1A之部分，藉由蝕刻，將第2積層體24之表面24a至除去預定部50之複數個貫通孔24b形成於第2積層體24。此時，如圖12(b)所示，於對應於各虛設濾光器部2A之部分，不將複數個貫通孔24b形成於第2積層體24。繼而，如圖12所示，於層440上形成遮光層450。繼而，以藉由蝕刻，抗反射層410之表面露出之方式，將遮光層450及應力調整層400(即，層420、430、440)中沿各線5之部分除去。又，藉由該蝕刻，每個對應於基板11之部分，形成開口40a。繼而，於遮光層450上，露出之抗反射層410之表面、及開口40a之內表面、面向第2槽470之應力調整層400之側面，形成保護層460。Then, as shown in FIG. 12(a), the surface 24a of the second layered body 24 is removed to the predetermined portion 50 by etching in a portion corresponding to each of the Fabry-Perot interference filter portions 1A. The through holes 24b are formed in the second layered body 24. At this time, as shown in FIG. 12(b), a plurality of through holes 24b are not formed in the second layered body 24 in the portion corresponding to each of the dummy filter portions 2A. Then, as shown in FIG. 12, a light shielding layer 450 is formed on the layer 440. Then, the portions of the light shielding layer 450 and the stress adjustment layer 400 (i.e., the layers 420, 430, 440) along the respective lines 5 are removed by etching to expose the surface of the antireflection layer 410. Further, by this etching, each of the portions corresponding to the substrate 11 is formed with an opening 40a. Then, a protective layer 460 is formed on the light shielding layer 450 on the surface of the exposed antireflection layer 410, the inner surface of the opening 40a, and the side surface of the stress adjustment layer 400 facing the second groove 470.
至此為止，於基板層110之第2表面110b，形成抗反射層410、應力調整層400、遮光層450及保護層460，且於應力調整層400形成第2槽470。第2槽470係應力調整層400沿各線5部分地薄化之區域。Up to this point, the anti-reflection layer 410, the stress adjustment layer 400, the light shielding layer 450, and the protective layer 460 are formed on the second surface 110b of the substrate layer 110, and the second groove 470 is formed in the stress adjustment layer 400. The second groove 470 is a region in which the stress adjustment layer 400 is partially thinned along each line 5.
繼而，如圖13(a)所示，於對應於各法布里-佩洛干涉濾光器部1A之部分，藉由經由複數個貫通孔24b之蝕刻(例如，使用氟酸氣之氣相蝕刻)，將複數個除去預定部50自中間層230同時除去。藉此，於對應於各法布里-佩洛干涉濾光器部1A之部分，每個對應於基板11之部分，形成空隙S。此時，如圖13(b)所示，由於在對應於各虛設濾光器部2A之部分，複數個貫通孔24b未形成於第2積層體24，故未於中間層230形成空隙S。Then, as shown in FIG. 13(a), the portion corresponding to each of the Fabry-Perot interference filter portions 1A is etched through a plurality of through holes 24b (for example, a gas phase using a fluoric acid gas) By etching, a plurality of removal-predetermined portions 50 are simultaneously removed from the intermediate layer 230. Thereby, a space S is formed in a portion corresponding to each of the Fabry-Perot interference filter portions 1A corresponding to the substrate 11. At this time, as shown in FIG. 13(b), since the plurality of through holes 24b are not formed in the second layered body 24 in the portion corresponding to each of the dummy filter portions 2A, the gap S is not formed in the intermediate layer 230.
由上，於有效區域101中，如圖7(a)所示，藉由於互相對向之第1鏡面部31與第2鏡面部32間形成空隙S，而構成複數個法布里-佩洛干涉濾光器部1A。另一方面，於虛設區域102中，如圖7(b)所示，藉由於互相對向之第1鏡面部31與第2鏡面部32間設置中間層23，而構成複數個虛設濾光器部2A。
[檢查裝置及檢查方法]In the effective area 101, as shown in FIG. 7(a), a plurality of Fabry-Perot are formed by forming a gap S between the first mirror portion 31 and the second mirror portion 32 which face each other. The interference filter portion 1A. On the other hand, in the dummy region 102, as shown in FIG. 7(b), a plurality of dummy filters are formed by providing the intermediate layer 23 between the first mirror portion 31 and the second mirror portion 32 which face each other. Part 2A.
[Inspection device and inspection method]
其次，針對實施一實施形態之晶圓之檢查方法之檢查裝置之構成進行說明。如圖14所示，檢查裝置500具備晶圓支持部510、攝像部520、標記部530及控制部540。晶圓支持部510、攝像部520及標記部530配置於暗箱(省略圖示)內。檢查裝置500之檢查對象係晶圓100。檢查裝置500作為一例，具有實施晶圓(具體而言，係晶圓100之表面)之各法布里-佩洛干涉濾光器部1A之外觀檢查之功能；及於外觀檢查中判定為不良之法布里-佩洛干涉濾光器部1A進行墨水之標記之功能。Next, a configuration of an inspection apparatus for performing a wafer inspection method according to an embodiment will be described. As shown in FIG. 14 , the inspection apparatus 500 includes a wafer support unit 510 , an imaging unit 520 , a marking unit 530 , and a control unit 540 . The wafer support unit 510, the imaging unit 520, and the marking unit 530 are disposed in a dark box (not shown). The inspection object of the inspection device 500 is the wafer 100. As an example, the inspection apparatus 500 has a function of performing visual inspection of each Fabry-Perot interference filter unit 1A on which a wafer (specifically, the surface of the wafer 100 is); and it is determined to be defective in visual inspection. The Fabry-Perot interference filter unit 1A performs a function of marking ink.
晶圓支持部510以晶圓100之對向方向(即，第1鏡面部31與第2鏡面部32互相對向之方向)與基準線RL成平行之方式，支持晶圓100。晶圓支持部510例如係以能夠沿垂直於基準線RL之平面(至少沿與該平面平行且互相正交之2方向之各者)移動之方式構成之載台。再者，晶圓支持部510亦可以平行於基準線RL之線為中心可旋轉地構成。The wafer support portion 510 supports the wafer 100 such that the opposite direction of the wafer 100 (that is, the direction in which the first mirror portion 31 and the second mirror portion 32 face each other) is parallel to the reference line RL. The wafer support portion 510 is, for example, a stage that can be configured to move along a plane perpendicular to the reference line RL (at least in two directions parallel to the plane and orthogonal to each other). Further, the wafer support portion 510 may be configured to be rotatable about a line parallel to the reference line RL.
攝像部520拍攝藉由晶圓支持部510支持之晶圓100(具體而言，係晶圓100之表面)。攝像部520例如係沿基準線RL出射觀察用之光，檢測於藉由晶圓支持部510支持之晶圓100之表面反射之光，將攝像資料輸出至控制部540之相機。攝像部520設定為例如以10倍以上之倍率拍攝晶圓100之各法布里-佩洛干涉濾光器部1A。再者，攝像部520配置於基準線RL上，但亦可例如藉由將改變觀察用光之行進方向之鏡面構件配置於基準線RL上，而攝像部520配置於與基準線RL上不同之位置。The imaging unit 520 captures the wafer 100 (specifically, the surface of the wafer 100) supported by the wafer support unit 510. The imaging unit 520 emits light for observation along the reference line RL, for example, detects light reflected by the surface of the wafer 100 supported by the wafer support unit 510, and outputs the image data to the camera of the control unit 540. The imaging unit 520 sets, for example, each Fabry-Perot interference filter unit 1A of the wafer 100 at a magnification of 10 or more. Further, although the imaging unit 520 is disposed on the reference line RL, the imaging unit 520 may be disposed on the reference line RL by, for example, placing the mirror member that changes the traveling direction of the observation light, and the imaging unit 520 may be disposed differently from the reference line RL. position.
標記部530例如係對基於攝像資料判定為不良之法布里-佩洛干涉濾光器部1A執行墨水標記之裝置。如圖15所示，作為一例，標記部530具備墨水卡匣531、墨水532、燈絲533、金屬針534、及推桿535。The marker unit 530 is, for example, a device that performs ink marking on the Fabry-Perot interference filter unit 1A that is determined to be defective based on imaging data. As shown in FIG. 15, as an example, the marking portion 530 includes an ink cartridge 531, an ink 532, a filament 533, a metal needle 534, and a push rod 535.
墨水卡匣531形成大致長方體狀。於墨水卡匣531之內部，填充有墨水532。於墨水卡匣531中互相對向之壁部531a、531b，分別形成有剖面圓形狀之貫通孔531c、531d。The ink cartridge 531 is formed in a substantially rectangular parallelepiped shape. Inside the ink cartridge 531, ink 532 is filled. Through-holes 531c and 531d each having a circular cross section are formed in the wall portions 531a and 531b facing each other in the ink cartridge 531.
墨水532例如係藉由自然乾燥而硬化之自然硬化型之墨水。但，墨水532亦可為加熱硬化型(例如，藉由以90℃～180℃，加熱幾十分(10分～40分)而硬化之類型)、藉由UV照射而硬化之UV硬化型、或藉由電子線之照射而硬化之電子線硬化型等。墨水532硬化前之狀態之黏度例如為500 cP(cps)～50000 cP(cps)，更佳為200 cP～5000 cP。墨水532例如具有黑色等可識別之顏色。又，如上述，墨水532具有一定黏度，具有接著功能。即，墨水532係作為具有識別性之接著劑發揮功能者。The ink 532 is, for example, a natural hardening type ink which is hardened by natural drying. However, the ink 532 may be a heat-curing type (for example, a type which is hardened by heating at 90 ° C to 180 ° C for several tens of minutes (10 minutes to 40 minutes)), a UV curing type which is hardened by UV irradiation, Or an electron beam hardening type or the like which is hardened by irradiation with an electron beam. The viscosity of the state before the ink 532 is hardened is, for example, 500 cP (cps) to 50,000 cP (cps), more preferably 200 cP to 5000 cP. The ink 532 has, for example, a recognizable color such as black. Further, as described above, the ink 532 has a certain viscosity and has a function of adhesion. That is, the ink 532 functions as a recognizing adhesive.
燈絲533形成圓柱狀，並藉由吸收墨水532之素材形成。包含燈絲533之一端部533a之一部分係配置於墨水卡匣531內，包含燈絲533之另一端部533b之一部分係將貫通孔531c貫通，延伸至墨水卡匣531之外側。於燈絲533滲透有墨水532。The filament 533 is formed in a cylindrical shape and formed by absorbing the material of the ink 532. One of the ends 533a including one of the filaments 533 is disposed in the ink cassette 531, and one of the other end portions 533b of the filament 533 passes through the through hole 531c and extends to the outside of the ink cassette 531. The filament 533 is infiltrated with ink 532.
金屬針534係形成圓筒狀，與墨水卡匣531之一壁部531a之外側面531e連接。金屬針534以自燈絲533之延伸方向觀察，包圍貫通孔531c之方式，立設於該貫通孔531c之開口緣部。於金屬針534之內側，收納有包含燈絲533之另一端部533b之一部分。The metal needle 534 is formed in a cylindrical shape, and is connected to the outer surface 531e of the wall portion 531a of one of the ink cartridges 531. The metal needle 534 is erected on the opening edge of the through hole 531c so as to surround the through hole 531c as viewed from the extending direction of the filament 533. Inside the metal needle 534, a portion including the other end portion 533b of the filament 533 is housed.
推桿535具有貫通墨水卡匣531之貫通孔531d之圓柱狀之部分535a，該部分535a之前端與燈絲533之一端部533a連接。該部分535a可沿燈絲533之延伸方向於一定範圍內移動。藉由推桿535之上述移動，燈絲533相對於墨水卡匣531及金屬針534之位置變化。具體而言，藉由推桿535之上述移動，切換成燈絲533之另一端部533b位於較金屬針534之前端部534a更內側之初始狀態(參照圖15(a))，及燈絲533之另一端部533b較金屬針534之前端部534a更押出至外側之狀態(參照圖15(b))。The push rod 535 has a cylindrical portion 535a penetrating through the through hole 531d of the ink cartridge 531, and the front end of the portion 535a is connected to one end portion 533a of the filament 533. The portion 535a is movable within a certain range along the direction in which the filament 533 extends. The position of the filament 533 with respect to the ink cassette 531 and the metal needle 534 changes by the above movement of the push rod 535. Specifically, by the above movement of the push rod 535, the other end portion 533b of the filament 533 is switched to an initial state inside the front end portion 534a of the metal needle 534 (refer to FIG. 15(a)), and the other of the filament 533 The one end portion 533b is pushed out to the outside than the front end portion 534a of the metal needle 534 (see FIG. 15(b)).
標記部530例如係藉由基於來自控制部540之控制信號動作之基體構件(未圖示)支持。基體構件基於來自控制部540之控制信號，於平行於基準線RL之方向(Z方向)，及垂直於基準線RL且互相正交之2方向(XY方向)可移動地構成。又，基體構件構成為基於來自控制部540之控制信號，可控制推桿535之移動(即，圖15(a)所示之狀態與(b)所示之狀態之切換)。The marker unit 530 is supported by, for example, a base member (not shown) that operates based on a control signal from the control unit 540. The base member is configured to be movable in a direction parallel to the reference line RL (Z direction) and a direction (XY direction) perpendicular to the reference line RL and orthogonal to each other based on a control signal from the control unit 540. Further, the base member is configured to control the movement of the push rod 535 (that is, the switching between the state shown in FIG. 15(a) and the state shown in (b) based on the control signal from the control unit 540.
控制部540作為包含處理器、記憶體、儲存裝置及通信裝置等之電腦裝置構成。於控制部540中，處理器藉由執行讀入至記憶體等之特定之軟體(程式)，控制記憶體及儲存裝置之資料之讀出及寫入等而實現各種功能。例如，控制部540藉由控制各部(晶圓支持部510、攝像部520及標記部530)之動作，實現後述之晶圓之檢查方法。The control unit 540 is configured as a computer device including a processor, a memory, a storage device, and a communication device. In the control unit 540, the processor realizes various functions by controlling reading and writing of data of the memory and the storage device by executing a specific software (program) read into a memory or the like. For example, the control unit 540 controls the operation of each unit (the wafer support unit 510, the imaging unit 520, and the labeling unit 530) to realize a wafer inspection method to be described later.
於如上構成之檢查裝置500中，藉由控制部540控制各部之動作，從而如下實施晶圓之檢查方法。首先，準備檢查對象即晶圓100，並藉由晶圓支持部510予以支持。此時，以對向方向與基準線RL成平行之方式，藉由晶圓支持部510支持晶圓100。In the inspection apparatus 500 configured as described above, the control unit 540 controls the operation of each unit, thereby implementing the wafer inspection method as follows. First, the wafer 100 to be inspected is prepared and supported by the wafer support unit 510. At this time, the wafer 100 is supported by the wafer support portion 510 such that the opposing direction is parallel to the reference line RL.
繼而，執行藉由晶圓支持部510支持之晶圓100之複數個法布里-佩洛干涉濾光器部1A之各者之良否判定。具體而言，為進行晶圓100之各法布里-佩洛干涉濾光器部1A之良否判定，而實施一個以上檢查項目相關之檢查。本實施形態中，作為一例，基於藉由攝像部520拍攝之圖像(攝像資料)執行外觀檢查。具體而言，藉由攝像部520拍攝藉由晶圓支持部510支持之晶圓100。將藉由攝像部520拍攝之攝像資料輸出至控制部540。控制部540可基於攝像部520之位置及攝像資料，取得該攝像資料所含之法布里-佩洛干涉濾光器部1A之座標資訊。座標資訊係特定晶圓100之法布里-佩洛干涉濾光器部1A之位置之資訊。Then, the determination of the quality of each of the plurality of Fabry-Perot interference filter sections 1A of the wafer 100 supported by the wafer support unit 510 is performed. Specifically, in order to determine whether or not the Fabry-Perot interference filter unit 1A of the wafer 100 is good or not, one or more inspection items are inspected. In the present embodiment, as an example, an appearance check is performed based on an image (imaging material) captured by the imaging unit 520. Specifically, the imaging unit 520 captures the wafer 100 supported by the wafer support unit 510. The image data captured by the imaging unit 520 is output to the control unit 540. The control unit 540 can acquire the coordinate information of the Fabry-Perot interference filter unit 1A included in the imaging data based on the position of the imaging unit 520 and the imaging data. The coordinate information is information on the position of the Fabry-Perot interference filter portion 1A of the specific wafer 100.
又，控制部540基於對攝像資料之圖像處理結果，檢測藉由攝像部520拍攝之法布里-佩洛干涉濾光器部1A之表面之外觀異常。控制部540例如藉由將藉由攝像部520拍攝之法布里-佩洛干涉濾光器部1A、及預先記憶之圖案圖像(無外觀異常之法布里-佩洛干涉濾光器部之圖像)進行比較，判定所拍攝之法布里-佩洛干涉濾光器部1A之表面是否存在破損、裂縫、異物、髒污等外觀異常。控制部540將判定存在此種外觀異常之法布里-佩洛干涉濾光器部1A判定為不良(NG)。且，控制部540與特定判定為不良之法布里-佩洛干涉濾光器部1A之資訊(例如座標資訊)建立對應，記憶表示該法布里-佩洛干涉濾光器部1A為不良之資訊(NG旗標)。Moreover, the control unit 540 detects an abnormal appearance of the surface of the Fabry-Perot interference filter unit 1A imaged by the imaging unit 520 based on the image processing result of the image data. The control unit 540 is, for example, a Fabry-Perot interference filter unit 1A that is imaged by the imaging unit 520, and a pattern image that is memorized in advance (a Fabry-Perot interference filter unit having no appearance abnormality) The image was compared to determine whether or not the surface of the Fabry-Perot interference filter portion 1A that was photographed was abnormal in appearance such as breakage, cracks, foreign matter, or dirt. The control unit 540 determines that the Fabry-Perot interference filter unit 1A having such an appearance abnormality is determined to be defective (NG). Further, the control unit 540 associates information (for example, coordinate information) of the Fabry-Perot interference filter unit 1A that is determined to be defective, and memorizes that the Fabry-Perot interference filter unit 1A is defective. Information (NG flag).
控制部540亦可取代執行如上述之圖像處理(本實施形態中，係與圖案圖像之比較)，將攝像資料顯示於檢查裝置500所具備之顯示器(未圖示)，使操作員以目視確認有無外觀異常。藉由目視確認發現外觀異常之情形時，操作員例如可使用檢查裝置500具備之鍵盤等輸入裝置(未圖示)，輸出表示發現外觀異常之資訊(例如對複選框之勾選等)。該情形時，控制部540只要與特定輸出有表示發現外觀異常之資訊之法布里-佩洛干涉濾光器部1A之資訊建立對應，記憶NG旗標即可。Instead of performing the image processing as described above (in comparison with the pattern image in the present embodiment), the control unit 540 may display the image data on a display (not shown) included in the inspection device 500, so that the operator can Visually confirm the presence or absence of appearance abnormalities. When it is confirmed by visual observation that the appearance is abnormal, the operator can output information indicating that the appearance is abnormal (for example, check the check box, etc.) using an input device (not shown) such as a keyboard provided in the inspection device 500. In this case, the control unit 540 may store the NG flag as long as it is associated with the information of the Fabry-Perot interference filter unit 1A that specifically outputs information indicating that the appearance is abnormal.
再者，上述之外觀檢查例如係基於如下之判定基準而執行。
＜判定基準＞
・於第2鏡面層240中，於自對向方向觀察成為空隙S之部分，不存在破損、裂縫、異物或髒污。
・於端子15、16中，形成有正常之圖案，不存在圖案缺陷或腐蝕部。
・於法布里-佩洛干涉濾光器部1A之表面整體，不存在異物或髒污。Furthermore, the above-described visual inspection is performed based on, for example, the following criteria.
<Judgement criteria>
In the second mirror layer 240, the portion which becomes the gap S is observed from the opposite direction, and there is no damage, crack, foreign matter, or dirt.
・In the terminals 15 and 16, a normal pattern is formed, and there are no pattern defects or corrosion portions.
・The entire surface of the Fabry-Perot interference filter unit 1A does not have foreign matter or dirt.
例如，控制部540於判定對象之法布里-佩洛干涉濾光器部1A全部滿足上述判定基準之情形時，判定該法布里-佩洛干涉濾光器部1A為良品。另一方面，該法布里-佩洛干涉濾光器部1A不滿足上述判定基準之至少一者之情形時，控制部540判定該法布里-佩洛干涉濾光器部1A為不良品(不良)。For example, when the Fabry-Perot interference filter unit 1A of the determination unit satisfies the above-described determination criteria, the control unit 540 determines that the Fabry-Perot interference filter unit 1A is a good one. On the other hand, when the Fabry-Perot interference filter unit 1A does not satisfy at least one of the above-described determination criteria, the control unit 540 determines that the Fabry-Perot interference filter unit 1A is defective. (bad).
控制部540藉由對晶圓100之各法布里-佩洛干涉濾光器部1A依序執行如上述之檢查(此處為外觀檢查)，而可特定出晶圓100之複數個法布里-佩洛干涉濾光器部1A中判定為不良之法布里-佩洛干涉濾光器部1A。例如，控制部540每當完成對1個法布里-佩洛干涉濾光器部1A之檢查時，藉由控制晶圓支持部510之動作，使下個法布里-佩洛干涉濾光器部1A移動至基準線RL上。然後，控制部540對該下個法布里-佩洛干涉濾光器部1A同樣地實施檢查。以下，同樣地，依序實施各法布里-佩洛干涉濾光器部1A之檢查。The control unit 540 can specify a plurality of fabrics of the wafer 100 by sequentially performing the above-described inspection (here, visual inspection) on each Fabry-Perot interference filter portion 1A of the wafer 100. The Fabry-Perot interference filter portion 1A which is determined to be defective in the pe-Perot interference filter portion 1A. For example, the control unit 540 controls the wafer support portion 510 to control the next Fabry-Perot interference filter every time the inspection of the Fabry-Perot interference filter portion 1A is completed. The unit 1A moves to the reference line RL. Then, the control unit 540 performs the inspection in the same manner on the next Fabry-Perot interference filter unit 1A. Hereinafter, the inspection of each Fabry-Perot interference filter unit 1A is performed in the same manner in the same manner.
再者，用以進行各法布里-佩洛干涉濾光器部1A之良否判定之檢查不限於上述之外觀檢查(表面之外觀檢查)，可包含其他各種觀點之檢查。例如，檢查裝置500亦可進而具備用以實施法布里-佩洛干涉濾光器部1A之背面(基板層110之第2表面110b側之表面)之外觀檢查之功能。該外觀檢查例如基於如下之判定基準而執行。
＜背面之外觀檢查之判定基準＞
・於光透過區域1a(開口40a內)，不存在異物或髒污。
・於保護層46，不存在可看見基底層(遮光層45)之程度之缺陷。In addition, the inspection for determining the quality of each Fabry-Perot interference filter unit 1A is not limited to the above-described visual inspection (appearance inspection of the surface), and may include inspection of various other viewpoints. For example, the inspection apparatus 500 may further include a function of performing an appearance inspection of the back surface of the Fabry-Perot interference filter unit 1A (the surface on the second surface 110b side of the substrate layer 110). This visual inspection is performed, for example, based on the following criteria.
<Criteria for judging the appearance of the back>
・In the light transmission area 1a (inside the opening 40a), there is no foreign matter or dirt.
In the protective layer 46, there is no defect in the extent that the underlying layer (light-shielding layer 45) is visible.
又，檢查裝置500亦可具備用以實施是否將法布里-佩洛干涉濾光器部1A之特性(例如，施加電壓之大小與透過之光之波長(各電壓中檢測強度成為峰值之波長)之關係)納入預先規定之範圍相關之光檢查之機構。又，檢查裝置500亦可具備用以實施法布里-佩洛干涉濾光器部1A之電性檢查之機構。電性檢查例如係基於對端子15、16間施加電壓時之漏電流、或電容(相當於法布里-佩洛干涉濾光器部1A中產生於第1電極12與第3電極14間之靜電電容)之測定結果之檢查。Further, the inspection apparatus 500 may be provided with a function for performing the Fabry-Perot interference filter section 1A (for example, the magnitude of the applied voltage and the wavelength of the transmitted light (the wavelength at which the detection intensity of each voltage becomes a peak) Relationship)) A mechanism that incorporates a predetermined inspection of the scope of the inspection. Further, the inspection apparatus 500 may be provided with a mechanism for performing electrical inspection of the Fabry-Perot interference filter unit 1A. The electrical inspection is based, for example, on a leakage current when a voltage is applied between the terminals 15 and 16, or a capacitance (corresponding to the difference between the first electrode 12 and the third electrode 14 in the Fabry-Perot interference filter unit 1A). Inspection of the measurement results of the electrostatic capacitance).
作為用以進行晶圓100之各法布里-佩洛干涉濾光器部1A之良否判定之檢查，藉由檢查裝置500實施上述外觀檢查(表面、背面)、光檢查及電性檢查等複數個檢查項目相關之檢查之情形時，對於至少1個檢查項目相關之檢查中判定為不良之法布里-佩洛干涉濾光器，將NG旗標建立關聯。As the inspection for determining the quality of each Fabry-Perot interference filter unit 1A of the wafer 100, the inspection apparatus 500 performs the above-described visual inspection (surface, back surface), optical inspection, and electrical inspection. In the case of an inspection related to the inspection item, the NG flag is associated with the Fabry-Perot interference filter which is determined to be defective in the inspection related to at least one inspection item.
繼而，控制部540於晶圓100之所有法布里-佩洛干涉濾光器部1A之良否判定結束後，對判定為不良之一個以上法布里-佩洛干涉濾光器部1A依序塗佈墨水532。具體而言，控制部540藉由控制標記部530之動作，對判定為不良之法布里-佩洛干涉濾光器部1A之第2鏡面層240中，自對向方向觀察成為空隙S之部分(以下，簡稱為「膜部」)之至少一部分，塗佈墨水532。更具體而言，控制部540以標記部530之燈絲533之另一端部533b成為押出至較金屬針534之前端部534a更外側之狀態(參照圖15(b))，且形成於燈絲533之另一端部533b之墨水積存532a按壓於判定為不良之法布里-佩洛干涉濾光器部1A之膜部之至少一部分之方式，控制標記部530之動作。Then, after the determination of the quality of all Fabry-Perot interference filter sections 1A of the wafer 100 is completed, the control unit 540 sequentially determines one or more Fabry-Perot interference filter sections 1A that are determined to be defective. The ink 532 is applied. Specifically, the control unit 540 controls the mark portion 530 to detect the gap S from the opposite direction of the second mirror layer 240 of the Fabry-Perot interference filter unit 1A that is determined to be defective. At least a part of the portion (hereinafter simply referred to as "film portion") is coated with ink 532. More specifically, the control unit 540 is in a state in which the other end portion 533b of the filament 533 of the marking portion 530 is pushed out to the outer end portion 534a of the metal needle 534 (see FIG. 15(b)), and is formed in the filament 533. The ink reservoir 532a of the other end portion 533b is pressed against at least a part of the film portion of the Fabry-Perot interference filter portion 1A which is determined to be defective, and controls the operation of the marker portion 530.
存在複數個判定為不良之法布里-佩洛干涉濾光器部1A之情形時，控制部540例如每次對1個法布里-佩洛干涉濾光器部1A之標記結束時，使標記部530之位置移動至用以進行下個法布里-佩洛干涉濾光器部1A之標記之位置，同樣地實施對該下個法布里-佩洛干涉濾光器部1A之標記。以下，同樣地，依序實施對判定為不良之各法布里-佩洛干涉濾光器部1A之標記。再者，標記部530與判定為不良之法布里-佩洛干涉濾光器部1A間之對位，可如上述，藉由使標記部530移動而進行，可藉由使晶圓支持部510移動而進行，亦可藉由使標記部530及晶圓支持部510之兩者移動而進行。When there are a plurality of Fabry-Perot interference filter sections 1A that are determined to be defective, the control unit 540, for example, every time the marking of one Fabry-Perot interference filter section 1A is completed, The position of the marker portion 530 is moved to a position for marking the next Fabry-Perot interference filter portion 1A, and the marking of the next Fabry-Perot interference filter portion 1A is similarly performed. . Hereinafter, in the same manner, the marks of the respective Fabry-Perot interference filter portions 1A that are determined to be defective are sequentially performed. Furthermore, the alignment between the marking portion 530 and the Fabry-Perot interference filter portion 1A determined to be defective can be performed by moving the marking portion 530 as described above, and the wafer supporting portion can be made The movement of 510 is performed by moving both the marking portion 530 and the wafer support portion 510.
藉由以上之處理，如圖16所示，獲得晶圓100A，其於複數個法布里-佩洛干涉濾光器部1A中，於至少1個不良品之法布里-佩洛干涉濾光器部1A(此處，為2個法布里-佩洛干涉濾光器部1Aa、1Ab)塗佈有墨水532，於至少1個良品之法布里-佩洛干涉濾光器部1A(此處，為法布里-佩洛干涉濾光器部1Aa、1Ab以外之法布里-佩洛干涉濾光器部1A)未塗佈墨水532。此處，所謂「不良品之法布里-佩洛干涉濾光器部1A」，係藉由用以進行如上述之良否判定之檢查，判定為不良之法布里-佩洛干涉濾光器部1A。所謂「良品之法布里-佩洛干涉濾光器部1A」，係藉由用以進行如上述之良否判定之檢查，未判定為不良之法布里-佩洛干涉濾光器部1A。By the above processing, as shown in FIG. 16, the wafer 100A is obtained in a plurality of Fabry-Perot interference filter sections 1A, and at least one defective product is Fabry-Perot interference filter. The photoreceiver 1A (here, the two Fabry-Perot interference filter sections 1Aa and 1Ab) is coated with ink 532 in at least one good Fabry-Perot interference filter section 1A. (In this case, the Fabry-Perot interference filter portion 1A other than the Fabry-Perot interference filter portions 1Aa and 1Ab) is not coated with the ink 532. Here, the "Fabriel-Perot interference filter portion 1A of defective product" is a Fabry-Perot interference filter that is determined to be defective by performing the above-described inspection of the quality of the determination. Part 1A. The Fabry-Perot interference filter unit 1A of the "good product" is a Fabry-Perot interference filter unit 1A that is not determined to be defective by the inspection for the above-described quality determination.
本實施形態中，作為一例，於圖17(a)所示之法布里-佩洛干涉濾光器部1Aa中，膜部未破損。此種法布里-佩洛干涉濾光器部1Aa例如係藉由上述之特性檢查(光檢查、電性檢查)判定為不良之法布里-佩洛干涉濾光器部1A。In the present embodiment, as an example, in the Fabry-Perot interference filter portion 1Aa shown in Fig. 17 (a), the film portion is not broken. Such a Fabry-Perot interference filter unit 1Aa is, for example, a Fabry-Perot interference filter unit 1A which is determined to be defective by the above-described characteristic inspection (photo inspection, electrical inspection).
又，圖17(b)所示之法布里-佩洛干涉濾光器部1Ab中，膜部具有破損、裂縫等破損部C。此種法布里-佩洛干涉濾光器部1Ab例如係藉由上述之外觀檢查或特性檢查(或其兩者)，判定為不良之法布里-佩洛干涉濾光器部1A。Further, in the Fabry-Perot interference filter portion 1Ab shown in FIG. 17(b), the film portion has a damaged portion C such as a break or a crack. Such a Fabry-Perot interference filter portion 1Ab is, for example, a Fabry-Perot interference filter portion 1A that is determined to be defective by the above-described visual inspection or characteristic inspection (or both).
圖17之例中，任一法布里-佩洛干涉濾光器部1Aa、1Ab中，皆於膜部之至少一部分(此處，作為一例，係與第2鏡面部32大致一致之圓形區域)形成墨水532之標記M。標記M之直徑(藉由標記部530塗佈之墨水532之點徑)例如為750 μm。
[法布里-佩洛干涉濾光器之製造方法]In the example of Fig. 17, any of the Fabry-Perot interference filter portions 1Aa and 1Ab is at least a part of the film portion (here, as an example, a circle substantially coincident with the second mirror portion 32) The area) forms the mark M of the ink 532. The diameter of the mark M (the spot diameter of the ink 532 coated by the mark portion 530) is, for example, 750 μm.
[Method of manufacturing Fabry-Perot interference filter]
繼而，針對自晶圓100切出法布里-佩洛干涉濾光器1之方法(法布里-佩洛干涉濾光器1之製造方法)，參照圖18及圖19進行說明。圖18及圖19中，(a)係對應於法布里-佩洛干涉濾光器部1A之部分之剖視圖，(b)係對應於虛設濾光器部2A之部分之剖視圖。Next, a method of manufacturing the Fabry-Perot interference filter 1 from the wafer 100 (a method of manufacturing the Fabry-Perot interference filter 1) will be described with reference to FIGS. 18 and 19. 18 and 19, (a) is a cross-sectional view corresponding to a portion of the Fabry-Perot interference filter portion 1A, and (b) is a cross-sectional view corresponding to a portion of the dummy filter portion 2A.
首先，如圖18所示，於保護層460上(即，第2表面110b側)貼附擴張片60。繼而，於第2表面110b側貼附有擴張片60之狀態下，自擴張片60之相反側照射雷射光L，使雷射光L之聚光點位於基板層110之內部，且使雷射光L之聚光點沿各線5相對移動。即，使雷射光L自擴張片60之相反側，經由第1槽290中露出之多晶矽層之表面入射至基板層110。First, as shown in FIG. 18, the expansion sheet 60 is attached to the protective layer 460 (that is, on the side of the second surface 110b). Then, in a state in which the expansion sheet 60 is attached to the second surface 110b side, the laser light L is irradiated from the opposite side of the expansion sheet 60, and the light collection point of the laser light L is positioned inside the substrate layer 110, and the laser light L is made. The spotlights move relative to each other along line 5. That is, the laser light L is incident on the substrate layer 110 via the surface of the polysilicon layer exposed in the first groove 290 from the side opposite to the expanded sheet 60.
然後，藉由該雷射光L之照射，沿各線5於基板層110之內部形成改質區域7。改質區域7係指密度、折射率、機械強度、其他物理特性與周圍成為不同狀態之區域，係成為於基板層110之厚度方向伸展之龜裂之起點之區域。作為改質區域7，例如有熔融處理區域(意指暫時熔融後再固化之區域、熔融狀態中之區域及自熔融再固化之狀態中之區域中的至少任一者)、裂縫區域、絕緣破壞區域、折射率變化區域等，亦有該等混合而成之區域。進而，作為改質區域7，有基板層110之材料中改質區域7之密度與非改質區域之密度相比產生變化之區域、形成有晶格缺陷之區域等。基板層110之材料為單結晶矽之情形時，改質區域7亦可稱為高錯位密度區域。再者，相對於各線5之基板層110之厚度方向所排列之改質區域7之行數根據基板層110之厚度而適當調整。Then, by the irradiation of the laser light L, the modified region 7 is formed inside the substrate layer 110 along each line 5. The modified region 7 is a region in which the density, the refractive index, the mechanical strength, and other physical properties are different from the surroundings, and is a region starting from the crack in the thickness direction of the substrate layer 110. The modified region 7 includes, for example, a molten processed region (meaning at least one of a region which is re-solidified after being temporarily melted, a region in a molten state, and a region in a state of self-melting and resolidification), a crack region, and dielectric breakdown. The region, the refractive index change region, and the like also have such a mixed region. Further, as the modified region 7, there is a region in which the density of the modified region 7 in the material of the substrate layer 110 is changed from the density of the non-modified region, a region in which a lattice defect is formed, or the like. When the material of the substrate layer 110 is a single crystal germanium, the modified region 7 may also be referred to as a high dislocation density region. Further, the number of rows of the modified regions 7 arranged in the thickness direction of the substrate layer 110 of each of the wires 5 is appropriately adjusted in accordance with the thickness of the substrate layer 110.
繼而，如圖19所示，藉由使貼附於第2表面110b側之擴張片60擴張，而使龜裂自形成於基板層110之內部之改質區域7於基板層110之厚度方向伸展，從而將基板層110沿各線5切斷成複數個基板11。此時，於第1槽290中將第2鏡面層240之多晶矽層沿各線5切斷，且於第2槽470中將抗反射層410及保護層460沿各線5切斷。藉此，獲得於擴張片60上互相分離狀態下之複數個法布里-佩洛干涉濾光器1及複數個虛設濾光器2。再者，將複數個法布里-佩洛干涉濾光器1中附加有標記M之法布里-佩洛干涉濾光器1以使用於後述之光檢測裝置10之製造之方式，自晶圓100切出後予以除去。
[光檢測裝置之構成]Then, as shown in FIG. 19, by expanding the expansion sheet 60 attached to the second surface 110b side, the crack is extended from the modified region 7 formed inside the substrate layer 110 in the thickness direction of the substrate layer 110. Thereby, the substrate layer 110 is cut along the respective lines 5 into a plurality of substrates 11. At this time, the polysilicon layer of the second mirror layer 240 is cut along the respective lines 5 in the first groove 290, and the anti-reflection layer 410 and the protective layer 460 are cut along the respective lines 5 in the second groove 470. Thereby, a plurality of Fabry-Perot interference filters 1 and a plurality of dummy filters 2 are obtained in a state in which the expansion sheets 60 are separated from each other. Further, a Fabry-Perot interference filter 1 to which a plurality of Fabry-Perot interference filters 1 are attached is attached to the photodetecting device 10 to be described later, and is self-crystallized. The circle 100 is cut out and removed.
[Composition of Light Detection Device]
其次，針對具備法布里-佩洛干涉濾光器1之光檢測裝置10之構成進行說明。如圖20所示，光檢測裝置10具備封裝71。封裝71係具有底座72及蓋73之CAN封裝。蓋73係由側壁74及頂壁75一體構成。底座72及蓋73係藉由金屬材料形成，互相氣密地接合。藉由金屬材料形成之封裝71中，側壁74之形狀係以線9為中心線之圓筒狀。底座72及頂壁75於平行於線9之方向上互相對向，分別蓋住側壁74之兩端。Next, a configuration of the photodetecting device 10 including the Fabry-Perot interference filter 1 will be described. As shown in FIG. 20, the photodetecting device 10 is provided with a package 71. The package 71 is a CAN package having a base 72 and a cover 73. The cover 73 is integrally formed by the side wall 74 and the top wall 75. The base 72 and the cover 73 are formed of a metal material and are hermetically joined to each other. In the package 71 formed of a metal material, the shape of the side wall 74 is a cylindrical shape with the line 9 as a center line. The base 72 and the top wall 75 oppose each other in a direction parallel to the line 9, respectively covering the ends of the side wall 74.
於底座72之內表面72a，固定有配線基板76。作為配線基板76之基板材料，例如可使用矽、陶瓷、石英、玻璃、塑料等。於配線基板76，安裝有光檢測器(光檢測部)77、及熱敏電阻等溫度檢測器(省略圖示)。光檢測器77配置於線9上。更具體而言，光檢測器77係以其受光部之中心線與線9一致之方式配置。光檢測器77例如係使用InGaAs等之量子型感測器、使用熱電堆或輻射熱計等之熱型感測器等紅外線感測器。檢測紫外線、可見光、近紅外線之各波長區域之光之情形時，作為光檢測器77，例如可使用矽光電二極體等。再者，可於光檢測器77設置1個受光部，或亦可複數個受光部陣列狀設置。再者，複數個光檢測器77亦可安裝於配線基板76。為能夠檢測法布里-佩洛干涉濾光器1之溫度變化，亦可將溫度檢測器配置於例如接近法布里-佩洛干涉濾光器1之位置。A wiring board 76 is fixed to the inner surface 72a of the base 72. As the substrate material of the wiring substrate 76, for example, tantalum, ceramic, quartz, glass, plastic, or the like can be used. A photodetector (light detecting unit) 77 and a temperature detector (not shown) such as a thermistor are attached to the wiring board 76. The photodetector 77 is disposed on the line 9. More specifically, the photodetector 77 is disposed such that the center line of the light receiving portion thereof coincides with the line 9. The photodetector 77 is, for example, a quantum sensor such as InGaAs or an infrared sensor such as a thermal sensor such as a thermopile or a bolometer. When the light of each wavelength region of the ultraviolet ray, the visible ray, or the near infrared ray is detected, as the photodetector 77, for example, a erbium photodiode or the like can be used. Further, one light receiving unit may be provided in the photodetector 77, or a plurality of light receiving units may be provided in an array. Further, a plurality of photodetectors 77 may be mounted on the wiring substrate 76. In order to be able to detect the temperature change of the Fabry-Perot interference filter 1, the temperature detector may be disposed, for example, at a position close to the Fabry-Perot interference filter 1.
於配線基板76上，固定有複數個間隔件78。作為各間隔件78之材料，例如可使用矽、陶瓷、石英、玻璃、塑料等。於複數個間隔件78上，例如藉由接著劑固定有法布里-佩洛干涉濾光器1。法布里-佩洛干涉濾光器1係配置於線9上。更具體而言，法布里-佩洛干涉濾光器1係以光透過區域1a之中心線與線9一致之方式配置。再者，間隔件78亦可與配線基板76一體構成。又，法布里-佩洛干涉濾光器1亦可並非藉由複數個間隔件78支持，而藉由1個間隔件78支持。A plurality of spacers 78 are fixed to the wiring substrate 76. As a material of each spacer 78, for example, tantalum, ceramic, quartz, glass, plastic, or the like can be used. The Fabry-Perot interference filter 1 is fixed to a plurality of spacers 78, for example, by an adhesive. The Fabry-Perot interference filter 1 is arranged on the line 9. More specifically, the Fabry-Perot interference filter 1 is disposed such that the center line of the light-transmitting region 1a coincides with the line 9. Further, the spacer 78 may be formed integrally with the wiring substrate 76. Further, the Fabry-Perot interference filter 1 may not be supported by a plurality of spacers 78 but supported by one spacer 78.
於底座72，固定有複數個引線接腳81。更具體而言，各引線接腳81以維持與底座72間之電性絕緣性及氣密性之狀態，貫通底座72。於各引線接腳81，藉由導線82電性連接有設置於配線基板76之電極墊、光檢測器77之端子、溫度檢測器之端子、及法布里-佩洛干涉濾光器1之端子之各者。再者，光檢測器77、溫度檢測器及法布里-佩洛干涉濾光器1亦可經由配線基板76，與各引線接腳81電性連接。例如，亦可將各個端子及設置於配線基板76之電極墊電性連接，將電極墊及各引線接腳81藉由導線82連接。藉此，可對光檢測器77、溫度檢測器及法布里-佩洛干涉濾光器1之各者輸入輸出電性信號等。A plurality of lead pins 81 are fixed to the base 72. More specifically, each of the lead pins 81 penetrates the base 72 in a state of maintaining electrical insulation and airtightness with the chassis 72. Each of the lead pins 81 is electrically connected to an electrode pad provided on the wiring substrate 76, a terminal of the photodetector 77, a terminal of the temperature detector, and a Fabry-Perot interference filter 1 by a wire 82. Each of the terminals. Further, the photodetector 77, the temperature detector, and the Fabry-Perot interference filter 1 may be electrically connected to the lead pins 81 via the wiring substrate 76. For example, each of the terminals and the electrode pads provided on the wiring substrate 76 may be electrically connected, and the electrode pads and the lead pins 81 may be connected by a wire 82. Thereby, an electrical signal or the like can be input and output to each of the photodetector 77, the temperature detector, and the Fabry-Perot interference filter 1.
於封裝71形成有開口71a。更具體而言，開口71a係以其中心線與線9一致之方式，形成於蓋73之頂壁75。自平行於線9之方向觀察之情形時，開口71a之形狀為圓形狀。於頂壁75之內表面75a，以蓋住開口71a之方式配置有光透過構件83。光透過構件83與頂壁75之內表面75a氣密接合。光透過構件83具有於平行於線9之方向互相對向之光入射面83a及光出射面(內表面)83b、以及側面83c。光透過構件83之光入射面83a於開口71a與頂壁75之外表面成為大致同一平面。光透過構件83之側面83c與封裝71之側壁74之內表面74a接觸。即，光透過構件83到達開口71a內及側壁74之內表面74a。此種光透過構件83係藉由將開口71a設為下側之狀態下於蓋73之內側配置玻璃顆粒，使該玻璃顆粒熔融而形成。即，光透過構件83係藉由熔合玻璃而形成。An opening 71a is formed in the package 71. More specifically, the opening 71a is formed in the top wall 75 of the cover 73 in such a manner that its center line coincides with the line 9. The shape of the opening 71a is a circular shape when viewed in a direction parallel to the line 9. The light transmitting member 83 is disposed on the inner surface 75a of the top wall 75 so as to cover the opening 71a. The light transmitting member 83 is hermetically joined to the inner surface 75a of the top wall 75. The light transmitting member 83 has a light incident surface 83a, a light exit surface (inner surface) 83b, and a side surface 83c that face each other in a direction parallel to the line 9. The light incident surface 83a of the light transmitting member 83 is substantially flush with the outer surface of the top wall 75 at the opening 71a. The side surface 83c of the light transmitting member 83 is in contact with the inner surface 74a of the side wall 74 of the package 71. That is, the light transmitting member 83 reaches the inside of the opening 71a and the inner surface 74a of the side wall 74. The light-transmitting member 83 is formed by disposing glass particles on the inside of the lid 73 in a state where the opening 71a is on the lower side, and melting the glass particles. That is, the light transmitting member 83 is formed by fusing glass.
於光透過構件83之光出射面83b，藉由接著構件85固定有帶通濾波器84。即，接著構件85經由接合於頂壁75之內表面75a之光透過構件83，而將帶通濾波器84固定於頂壁75之內表面75a。帶通濾波器84使透過光透過構件83之光中，光檢測裝置10之測定波長範圍之光(係特定之波長範圍之光，且係應入射於法布里-佩洛干涉濾光器1之光透過區域1a之光)選擇性透過(即，僅使該波長範圍之光透過)。帶通濾波器84之形狀為四角形板狀。更具體而言，帶通濾波器84具有於平行於線9之方向上互相對向之光入射面84a及光出射面84b、以及4個側面84c。帶通濾波器84係於藉由光透過性材料(例如矽、玻璃等)形成為四角形板狀之光透過構件之表面，形成有介電質多層膜(例如包含TiO2 、Ta2 O5 等高折射材料與SiO2 、MgF2 等低折射材料之組合之多層膜)者。A band pass filter 84 is fixed to the light exit surface 83b of the light transmitting member 83 by the member 85. That is, the member 85 is fixed to the inner surface 75a of the top wall 75 via the light transmitting member 83 joined to the inner surface 75a of the top wall 75. The band pass filter 84 transmits light of a wavelength range of the light detecting device 10 in the light transmitted through the light transmitting member 83 (a light of a specific wavelength range, and is incident on the Fabry-Perot interference filter 1) The light transmitted through the region 1a is selectively transmitted (ie, only light of the wavelength range is transmitted). The shape of the band pass filter 84 is a quadrangular plate shape. More specifically, the band pass filter 84 has a light incident surface 84a and a light exit surface 84b that face each other in the direction parallel to the line 9, and four side faces 84c. The band pass filter 84 is formed on a surface of a light transmissive member formed of a square plate shape by a light transmissive material (for example, enamel, glass, or the like) to form a dielectric multilayer film (for example, TiO 2 , Ta 2 O 5 , or the like). A multilayer film of a combination of a high refractive material and a low refractive material such as SiO 2 or MgF 2 .
接著構件85具有配置於帶通濾波器84之光入射面84a之整個區域之第1部分85a。即，第1部分85a係接著構件85中配置於互相對向之光透過構件83之光出射面83b與帶通濾波器84之光入射面84a之間的部分。進而，接著構件85具有自平行於線9之方向觀察之情形時，自帶通濾波器84之外緣向外側突出之第2部分85b。第2部分85b到達側壁74之內表面74a，與側壁74之內表面74a接觸。又，第2部分85b與帶通濾波器84之側面84c接觸。Next, the member 85 has a first portion 85a disposed over the entire area of the light incident surface 84a of the band pass filter 84. In other words, the first portion 85a is a portion of the subsequent member 85 disposed between the light exit surface 83b of the light transmitting member 83 opposed to each other and the light incident surface 84a of the band pass filter 84. Further, when the member 85 has a view parallel to the direction of the line 9, the second portion 85b which protrudes outward from the outer edge of the band pass filter 84. The second portion 85b reaches the inner surface 74a of the side wall 74 and is in contact with the inner surface 74a of the side wall 74. Further, the second portion 85b is in contact with the side surface 84c of the band pass filter 84.
如上構成之光檢測裝置10中，若光自外部經由開口71a、光透過構件83及接著構件85入射至帶通濾波器84，則使特定之波長範圍之光選擇性透過。若透過帶通濾波器84之光入射至法布里-佩洛干涉濾光器1之光透過區域1a，則使特定之波長範圍之光中特定波長之光選擇性透過。透過法布里-佩洛干涉濾光器1之光透過區域1a之光入射至光檢測器77之受光部，並藉由光檢測器77進行檢測。即，光檢測器77將透過法布里-佩洛干涉濾光器1之光轉換成電性信號並輸出。例如，光檢測器77輸出與入射至受光部之光之強度對應之大小之電性信號。
[晶圓之檢查方法及晶圓之作用效果]In the photodetecting device 10 configured as described above, when light is incident from the outside through the opening 71a, the light transmitting member 83, and the connecting member 85 to the band pass filter 84, light of a specific wavelength range is selectively transmitted. When the light transmitted through the band pass filter 84 is incident on the light transmitting region 1a of the Fabry-Perot interference filter 1, light of a specific wavelength among the light of a specific wavelength range is selectively transmitted. Light passing through the light-transmitting region 1a of the Fabry-Perot interference filter 1 is incident on the light-receiving portion of the photodetector 77, and is detected by the photodetector 77. That is, the photodetector 77 converts the light transmitted through the Fabry-Perot interference filter 1 into an electrical signal and outputs it. For example, the photodetector 77 outputs an electrical signal of a magnitude corresponding to the intensity of light incident on the light receiving portion.
[Inspection method of wafer and effect of wafer]
上述晶圓之檢查方法包含：進行複數個法布里-佩洛干涉濾光器部1A之各者之良否判定之步驟；對進行良否判定之步驟中判定為不良之法布里-佩洛干涉濾光器部1A之第2鏡面層240中，自對向方向觀察與空隙S重疊之部分(膜部)之至少一部分，塗佈墨水532之步驟。The method for inspecting the wafer includes a step of determining the quality of each of the plurality of Fabry-Perot interference filter sections 1A, and a Fabry-Perot interference determined to be defective in the step of determining whether or not the quality is determined. In the second mirror layer 240 of the filter unit 1A, at least a part of the portion (film portion) overlapping the gap S is observed from the opposite direction, and the ink 532 is applied.
根據上述晶圓之檢查方法，在分別成為法布里-佩洛干涉濾光器1之預定之複數個法布里-佩洛干涉濾光器部1A一體化之狀態下(即晶圓狀態)，進行各法布里-佩洛干涉濾光器部1A之檢查(良否判定)。因此，與個別地檢查藉由切斷晶圓100而單片化之法布里-佩洛干涉濾光器1之情形相比，可更有效地進行檢查。又，上述檢查方法中，對判定為不良之法布里-佩洛干涉濾光器部1A(本實施形態中，係法布里-佩洛干涉濾光器部1Aa、1Ab)中，對具有所謂膜構造之脆弱部分(膜部)之至少一部分，塗佈墨水532。藉此，如圖17(b)所示之法布里-佩洛干涉濾光器部1Ab，假設第2積層體24之膜部破損之情形時，可抑制破損部分(破損部C)之捲起、自該破損部分之微粒之產生等。具體而言，藉由經由具有黏性之墨水532，固定該破損部分彼此(或該破損部分及未破損之部分)，而可提高膜部之強度，抑制膜部之破損進展。又，如圖17(a)所示之法布里-佩洛干涉濾光器部1Aa，即使膜部未破損之情形時，亦藉由墨水532強化該膜部，從而可減低該膜部將來破損之可能性。藉此，根據上述晶圓之檢查方法，可謀求檢查效率之提高，且抑制破損之法布里-佩洛干涉濾光器對其他法布里-佩洛干涉濾光器造成不良影響。According to the above inspection method of the wafer, in a state in which a predetermined plurality of Fabry-Perot interference filter portions 1A which are respectively the Fabry-Perot interference filter 1 are integrated (i.e., wafer state) The inspection of each Fabry-Perot interference filter unit 1A is performed (good or bad determination). Therefore, the inspection can be performed more effectively than in the case of individually inspecting the Fabry-Perot interference filter 1 which is singulated by cutting the wafer 100. Further, in the above-described inspection method, the Fabry-Perot interference filter unit 1A (in the present embodiment, the Fabry-Perot interference filter unit 1Aa, 1Ab) which is determined to be defective has The ink 532 is applied to at least a part of the fragile portion (film portion) of the film structure. As a result, when the film portion of the second layered body 24 is broken, the Fabry-Perot interference filter portion 1Ab shown in Fig. 17(b) can suppress the volume of the damaged portion (damage portion C). The generation of particles from the damaged portion, and the like. Specifically, by fixing the damaged portions (or the damaged portion and the unbroken portion) via the viscous ink 532, the strength of the film portion can be increased, and the progress of breakage of the film portion can be suppressed. Further, in the Fabry-Perot interference filter portion 1Aa shown in Fig. 17 (a), even if the film portion is not broken, the film portion is reinforced by the ink 532, whereby the film portion can be reduced in the future. The possibility of damage. Thereby, according to the above-described wafer inspection method, it is possible to improve the inspection efficiency and to prevent the damaged Fabry-Perot interference filter from adversely affecting other Fabry-Perot interference filters.
又，於塗佈墨水532之膜部之至少一部分，形成第2鏡面層240之與第1鏡面層220為相反側之表面(藉由將晶圓100沿各線5切斷，而成為表面24a之部分)至空隙S之貫通孔(本實施形態中，係複數個貫通孔24b)。藉此，可經由貫通孔24b，使墨水532自第2鏡面層240之表面滲透至內部(空隙S)。其結果，藉由墨水532強化第2鏡面層240。因此，圖17(b)所示之法布里-佩洛干涉濾光器部1Ab中，可有效抑制該第2鏡面層240之破損部C之捲起、自該破損部C之微粒之產生等。又，如圖17(a)所示，即使未於判定為不良之法布里-佩洛干涉濾光器部1Aa之膜部產生破損之情形時，亦可藉由滲透至空隙S之墨水532，有效減低該膜部將來破損之可能性。再者，對於法布里-佩洛干涉濾光器部1Ab，考慮墨水532經由形成於膜部之破損部C滲透至空隙S，但可藉由形成貫通孔24b，進而有效地使墨水532滲透至空隙S。Further, at least a part of the film portion of the applied ink 532 forms a surface of the second mirror layer 240 opposite to the first mirror surface layer 220 (by cutting the wafer 100 along each line 5, the surface 24a is formed. Part of the through hole to the gap S (in the present embodiment, a plurality of through holes 24b). Thereby, the ink 532 can be infiltrated from the surface of the second mirror layer 240 to the inside (the gap S) via the through hole 24b. As a result, the second mirror layer 240 is reinforced by the ink 532. Therefore, in the Fabry-Perot interference filter portion 1Ab shown in Fig. 17 (b), it is possible to effectively suppress the occurrence of the breakage of the damaged portion C of the second mirror layer 240 and the generation of particles from the damaged portion C. Wait. Further, as shown in Fig. 17 (a), even if the film portion of the Fabry-Perot interference filter portion 1Aa which is determined to be defective is not damaged, the ink 532 which penetrates into the gap S can be used. , effectively reducing the possibility of future damage of the membrane. Further, in the Fabry-Perot interference filter portion 1Ab, it is considered that the ink 532 penetrates into the gap S through the damaged portion C formed in the film portion, but the through hole 24b can be formed to effectively infiltrate the ink 532. To the gap S.
又，於上述晶圓之檢查方法中，塗佈墨水532之步驟中，進行良否判定之步驟中，所有法布里-佩洛干涉濾光器部1A之良否判定結束後，對判定為不良之一個以上法布里-佩洛干涉濾光器部1A依序塗佈墨水532。該情形時，由於對所有法布里-佩洛干涉濾光器部1A之檢查(良否判定)結束後，可對判定為不良之一個以上法布里-佩洛干涉濾光器部1A統一進行墨水532之標記，故可有效地進行標記。即，可藉由將進行對所有法布里-佩洛干涉濾光器部1A之良否判定之步驟，及對判定為不良之一個以上法布里-佩洛干涉濾光器部1A塗佈墨水之步驟完全分離，而簡化各步驟之處理之控制。再者，該情形時，執行墨水標記之裝置亦可為與執行用以良否判定之檢查之裝置不同之裝置。Further, in the method of inspecting the wafer, in the step of applying the ink 532, in the step of determining whether or not the Fabry-Perot interference filter unit 1A is completed, the determination is bad. One or more Fabry-Perot interference filter portions 1A are sequentially coated with ink 532. In this case, after the inspection of all the Fabry-Perot interference filter units 1A (good or bad determination) is completed, one or more Fabry-Perot interference filter units 1A that are determined to be defective can be collectively performed. The mark of the ink 532 can be effectively marked. In other words, the step of determining whether or not the Fabry-Perot interference filter unit 1A is good or not and the application of the ink to the one or more Fabry-Perot interference filter unit 1A that is determined to be defective can be applied. The steps are completely separated, and the control of the processing of each step is simplified. Furthermore, in this case, the means for performing the ink mark may be a different device from the means for performing the check for the good or bad decision.
另一方面，作為上述晶圓之檢查方法之變化例，亦可於塗佈墨水532之步驟中，進行良否判定之步驟中，每次將1個法布里-佩洛干涉濾光器部1A判定為不良時，對該1個法布里-佩洛干涉濾光器部1A塗佈墨水532。具體而言，亦可於某檢查(例如，上述之外觀檢查及特性檢查等中之1個檢查項目相關之檢查)中每次將1個法布里-佩洛干涉濾光器部1A判定為不良時，對該1個法布里-佩洛干涉濾光器部1A塗佈墨水532。該情形時，每次發現藉由某檢查項目相關之檢查判定為不良之法布里-佩洛干涉濾光器部1A時，即時進行對該法布里-佩洛干涉濾光器部1A之標記。藉此，可對有對其他法布里-佩洛干涉濾光器部1A造成不良影響之可能性之法布里-佩洛干涉濾光器部(例如有破損而產生微粒之可能性之法布里-佩洛干涉濾光器部1Ab)即時塗佈墨水532。其結果，可更有效抑制對其他法布里-佩洛干涉濾光器部1A造成不良影響。On the other hand, as a modification of the above-described wafer inspection method, one Fabry-Perot interference filter section 1A may be used each time in the step of performing the determination of the quality of the ink 532. When it is determined to be defective, the ink 532 is applied to the one Fabry-Perot interference filter unit 1A. Specifically, one Fabry-Perot interference filter unit 1A can be determined as one of each inspection (for example, inspection related to one inspection item in the above-described visual inspection and characteristic inspection). In the case of failure, the ink 532 is applied to the one Fabry-Perot interference filter unit 1A. In this case, each time the Fabry-Perot interference filter unit 1A is judged to be defective by the inspection related to an inspection item, the Fabry-Perot interference filter unit 1A is immediately performed. mark. Thereby, the Fabry-Perot interference filter portion having a possibility of adversely affecting the other Fabry-Perot interference filter portion 1A (for example, a method of generating particles by breakage) The Brie-Perot interference filter portion 1Ab) immediately coats the ink 532. As a result, it is possible to more effectively suppress the adverse effect on the other Fabry-Perot interference filter portion 1A.
又，墨水532硬化前之狀態之黏度例如為500 cP～50000 cP，更佳為200 cP～5000 cP。藉由使用此種黏度之墨水532，可較佳地抑制第2鏡面層240(膜部)之破損部分捲起、自該破損部分之微粒之產生等。Further, the viscosity of the state before the ink 532 is cured is, for example, 500 cP to 50,000 cP, more preferably 200 cP to 5,000 cP. By using the ink 532 having such viscosity, it is possible to preferably suppress the occurrence of breakage of the damaged portion of the second mirror layer 240 (film portion), generation of particles from the damaged portion, and the like.
又，於附加有墨水532之標記M之晶圓100A中，由於分別成為法布里-佩洛干涉濾光器1之預定之複數個法布里-佩洛干涉濾光器部1A成為一體化之狀態，故可有效進行對各法布里-佩洛干涉濾光器部1A之良否判定(檢查)。又，例如上述檢查之結果判定為不良之法布里-佩洛干涉濾光器部1A中，於具有所謂膜構造之脆弱部分(膜部)之至少一部分，塗佈有墨水532。藉此，假設膜部破損之情形時，可抑制破損部分之捲起、自該破損部分之微粒之產生等。又，膜部未破損之情形時，亦藉由利用墨水532強化該膜部，而減低該膜部將來破損之可能性。由上，根據晶圓100A，可謀求檢查效率之提高，且抑制破損之法布里-佩洛干涉濾光器對其他法布里-佩洛干涉濾光器造成不良影響。又，藉由附加有墨水532之標記M，可容易確認晶圓100A之破損部位(破損之法布里-佩洛干涉濾光器部1Aa、1Ab)。Further, in the wafer 100A to which the mark M of the ink 532 is attached, the predetermined plurality of Fabry-Perot interference filter portions 1A which become the Fabry-Perot interference filter 1 are integrated. Since the state is good, it is possible to effectively determine (check) the quality of each Fabry-Perot interference filter unit 1A. Further, for example, in the Fabry-Perot interference filter portion 1A, which is determined to be defective as a result of the above-described inspection, at least a part of the fragile portion (film portion) having a so-called film structure is coated with the ink 532. Therefore, when the film portion is broken, it is possible to suppress the occurrence of the breakage of the damaged portion, the generation of the fine particles from the damaged portion, and the like. Further, when the film portion is not broken, the film portion is also reinforced by the ink 532, and the possibility that the film portion is damaged in the future is reduced. From the above, according to the wafer 100A, the inspection efficiency can be improved, and the Fabry-Perot interference filter that suppresses damage can adversely affect other Fabry-Perot interference filters. Moreover, the damaged portion of the wafer 100A (the damaged Fabry-Perot interference filter portions 1Aa and 1Ab) can be easily confirmed by the mark M to which the ink 532 is attached.
又，於晶圓100A中，於形成於不良品之法布里-佩洛干涉濾光器部1A之空隙S，滲透有墨水532。具體而言，由標記部530塗佈之墨水532之一部分經由形成於膜部之複數個貫通孔24b及破損部C之至少一者，滲透至空隙S。藉此，於圖17(b)所示之法布里-佩洛干涉濾光器部1Ab中，藉由滲透至空隙S之墨水532，第2鏡面層240對第1鏡面層220固定，可有效抑制該第2鏡面層240之破損部C之捲起、自該破損部C之微粒之產生等。又，如圖17(a)所示之法布里-佩洛干涉濾光器部1Aa，即使未於膜部產生破損之情形時，亦可藉由滲透至空隙S之墨水532，有效減低該膜部將來破損之可能性。Further, in the wafer 100A, the ink 532 is infiltrated into the gap S formed in the Fabry-Perot interference filter portion 1A of the defective product. Specifically, a part of the ink 532 applied by the marking portion 530 penetrates into the gap S via at least one of the plurality of through holes 24b and the damaged portion C formed in the film portion. Thereby, in the Fabry-Perot interference filter portion 1Ab shown in FIG. 17(b), the second mirror layer 240 is fixed to the first mirror surface layer 220 by the ink 532 penetrating into the gap S. The rolling of the damaged portion C of the second mirror layer 240, the generation of particles from the damaged portion C, and the like are effectively suppressed. Further, as shown in Fig. 17 (a), the Fabry-Perot interference filter portion 1Aa can be effectively reduced by the ink 532 penetrating into the gap S even if the film portion is not damaged. The possibility of damage to the membrane in the future.
再者，於晶圓100中，成為複數個法布里-佩洛干涉濾光器1之複數個法布里-佩洛干涉濾光器部1A係設置於有效區域101。另一方面，於沿基板層110之外緣110c且包圍有效區域101之虛設區域102，設有複數個虛設濾光器部2A，於各虛設濾光器部2A中，於互相對向之第1鏡面部31與第2鏡部32之間設有中間層23。藉此，充分確保晶圓100整體之強度。因此，對各法布里-佩洛干涉濾光器部1A實施上述檢查方法時之晶圓100之處理變容易。又，由於晶圓100不易翹曲，故可精度良好地實施對各法布里-佩洛干涉濾光器部1A之檢查，及對判定為不良之法布里-佩洛干涉濾光器部1A之墨水塗佈。Further, in the wafer 100, a plurality of Fabry-Perot interference filter portions 1A serving as a plurality of Fabry-Perot interference filters 1 are provided in the effective region 101. On the other hand, in the dummy region 102 surrounding the outer edge 110c of the substrate layer 110 and surrounding the effective region 101, a plurality of dummy filter portions 2A are provided, and in each of the dummy filter portions 2A, opposite to each other An intermediate layer 23 is provided between the mirror portion 31 and the second mirror portion 32. Thereby, the strength of the wafer 100 as a whole is sufficiently ensured. Therefore, the processing of the wafer 100 when the above-described inspection method is performed on each of the Fabry-Perot interference filter units 1A becomes easy. Moreover, since the wafer 100 is not easily warped, the inspection of each Fabry-Perot interference filter unit 1A and the Fabry-Perot interference filter unit which is judged to be defective can be accurately performed. 1A ink coating.
又，於晶圓100之製造方法中，保持複數個法布里-佩洛干涉濾光器部1A為晶圓100之狀態下，於各法布里-佩洛干涉濾光器部1A中形成空隙S。藉此，與以各晶片級實施空隙S之形成之情形相比，效率極其佳，可於第1鏡面部31與第2鏡面部32之間形成空隙S。並且，於有效區域101中，由於對二維配置之複數個除去預定部50同時實施中間層230之蝕刻等，於基板層110內之任意對應於基板11之部分、及包圍其之周圍之對應於基板11之部分，製程同時進展，故可減少基板層110之面內之應力偏差。藉此，根據晶圓100之製造方法，可獲得能夠穩定地量產高品質之法布里-佩洛干涉濾光器1之晶圓100。Further, in the method of manufacturing the wafer 100, a plurality of Fabry-Perot interference filter portions 1A are held in the wafer 100, and are formed in each Fabry-Perot interference filter portion 1A. Clearance S. Thereby, the efficiency is extremely excellent as compared with the case where the gap S is formed at each wafer level, and the gap S can be formed between the first mirror portion 31 and the second mirror portion 32. Further, in the effective region 101, the etching of the intermediate layer 230 is performed simultaneously on the plurality of removal-predetermined portions 50 arranged two-dimensionally, and the portion corresponding to the substrate 11 in the substrate layer 110 and the surrounding portion thereof are aligned. At the portion of the substrate 11, the process progresses at the same time, so that the stress deviation in the plane of the substrate layer 110 can be reduced. Thereby, according to the manufacturing method of the wafer 100, the wafer 100 capable of stably mass-producing the high-quality Fabry-Perot interference filter 1 can be obtained.
又，藉由雷射光L之照射，沿各線5於基板層110之內部形成改質區域7，從而根據以下理由，沿各線5切斷晶圓100於製造法布里-佩洛干涉濾光器1之方面極其有效。即，於使用雷射光L之晶圓100之切斷中，由於無需水，故不會產生於空隙S上懸空之第2鏡面部32因水壓而破損，或水滲透至空隙S內而黏結(第2鏡面部32與第1鏡面部31接觸而無法移動之現象)。藉此，使用雷射光L之晶圓100之切斷於製造法布里-佩洛干涉濾光器1之方面極其其有效。
[變化例]Further, by the irradiation of the laser light L, the modified region 7 is formed inside the substrate layer 110 along each line 5, thereby cutting the wafer 100 along each line 5 for manufacturing the Fabry-Perot interference filter for the following reason. The aspect of 1 is extremely effective. In other words, in the cutting of the wafer 100 using the laser light L, since the water is not required, the second mirror surface portion 32 which is suspended in the gap S does not break due to the water pressure, or the water penetrates into the gap S to be bonded. (The phenomenon that the second mirror portion 32 is in contact with the first mirror portion 31 and cannot move). Thereby, the cutting of the wafer 100 using the laser light L is extremely effective in manufacturing the Fabry-Perot interference filter 1.
[variation]
以上，雖已針對本發明之一實施形態進行說明，但本發明並不限定於上述實施形態。例如，各構成之材料及形狀不限於上述材料及形狀，可採用各種材料及形狀。Although the embodiment of the present invention has been described above, the present invention is not limited to the above embodiment. For example, the material and shape of each constituent are not limited to the above materials and shapes, and various materials and shapes can be employed.
如圖18所示，於晶圓100中，亦可以對應於第1槽290之方式，於基板層110之內部形成改質區域7。此處，所謂改質區域7對應於第1槽290，意指自對向方向觀察之情形時，改質區域7與第1槽290重疊，尤其意指改質區域7沿各線5形成之狀態。藉此，可使龜裂自改質區域7向基板層110之厚度方向伸展，可容易且精度良好地自晶圓100切出複數個法布里-佩洛干涉濾光器1。該情形時，亦可於基板層110之第2表面110b側貼附擴張片60。此時，貼附於晶圓100之擴張片60之外緣部係藉由環狀之框保持。藉此，即使係於基板層110之內部形成有改質區域7之狀態，亦可容易處理晶圓100。再者，於基板層110之內部形成有改質區域7之晶圓100中，有龜裂自改質區域7意外伸展之虞。於晶圓100中，由於在虛設區域102中一對區域102a，未設置複數個虛設濾光器部2A以及第1槽290及第2槽470，故使龜裂之伸展藉由一對區域102a而停止。As shown in FIG. 18, in the wafer 100, the modified region 7 may be formed inside the substrate layer 110 in accordance with the first groove 290. Here, the modified region 7 corresponds to the first groove 290, meaning that the modified region 7 overlaps with the first groove 290 when viewed from the opposite direction, and particularly means the state in which the modified region 7 is formed along each line 5. . Thereby, the crack can be extended from the modified region 7 in the thickness direction of the substrate layer 110, and a plurality of Fabry-Perot interference filters 1 can be cut out from the wafer 100 easily and accurately. In this case, the expandable sheet 60 may be attached to the second surface 110b side of the substrate layer 110. At this time, the outer edge portion of the expanded piece 60 attached to the wafer 100 is held by the annular frame. Thereby, even if the modified region 7 is formed inside the substrate layer 110, the wafer 100 can be easily processed. Further, in the wafer 100 in which the modified region 7 is formed inside the substrate layer 110, the crack is unexpectedly stretched from the modified region 7. In the wafer 100, since the plurality of dummy filters 2A and the first grooves 290 and the second grooves 470 are not provided in the pair of regions 102a in the dummy region 102, the cracks are stretched by the pair of regions 102a. And stop.
又，於上述實施形態中，主要針對於切斷晶圓前進行對晶圓之檢查進行了說明，但亦可實施晶圓狀態之檢查(對晶圓之檢查)及單片化後之檢查(對經單片化之法布里-佩洛干涉濾光器之檢查)之兩者。Further, in the above-described embodiment, the inspection of the wafer is mainly performed before the wafer is cut, but the inspection of the wafer state (inspection of the wafer) and the inspection after the singulation may be performed ( Both of the monolithic Fabry-Perot interference filters).
上述一實施形態或變化例之一部分構成可任意應用於其他實施形態之變化例之構成中。One of the above-described embodiments or variations can be arbitrarily applied to a configuration of a variation of another embodiment.
1‧‧‧法布里-佩洛干涉濾光器1‧‧‧ Fabry-Perot interference filter
1A‧‧‧法布里-佩洛干涉濾光器部 1A‧‧Fabre Pello Interference Filter Section
1Aa‧‧‧法布里-佩洛干涉濾光器部 1Aa‧‧ Fabry-Perot Interference Filter Section
1Ab‧‧‧法布里-佩洛干涉濾光器部 1Ab‧‧ Fabry-Perot Interference Filter Section
1a‧‧‧光透過區域 1a‧‧‧Light transmission area
2‧‧‧虛設濾光器 2‧‧‧Dummy filter
2A‧‧‧虛設濾光器部 2A‧‧‧Virtual Filter Department
2X‧‧‧鏡面除去部 2X‧‧‧Mirror Removal Department
3‧‧‧第1直線 3‧‧‧1st straight line
4‧‧‧第2直線 4‧‧‧2nd line
5‧‧‧線 5‧‧‧ line
7‧‧‧改質區域 7‧‧‧Modified area
11‧‧‧基板 11‧‧‧Substrate
11a‧‧‧第1表面 11a‧‧‧ first surface
11b‧‧‧第2表面 11b‧‧‧2nd surface
11c‧‧‧外緣部 11c‧‧‧The outer edge
12‧‧‧第1電極 12‧‧‧1st electrode
12a‧‧‧配線 12a‧‧‧Wiring
13‧‧‧第2電極 13‧‧‧2nd electrode
13a‧‧‧配線 13a‧‧‧Wiring
14‧‧‧第3電極 14‧‧‧3rd electrode
14a‧‧‧配線 14a‧‧‧Wiring
15‧‧‧端子 15‧‧‧terminal
16‧‧‧端子 16‧‧‧terminal
17‧‧‧溝槽 17‧‧‧ trench
18‧‧‧溝槽 18‧‧‧ trench
19‧‧‧溝槽 19‧‧‧ trench
21‧‧‧抗反射層 21‧‧‧Anti-reflective layer
21a‧‧‧側面 21a‧‧‧ side
22‧‧‧第1積層體 22‧‧‧1st laminate
22a‧‧‧側面 22a‧‧‧ side
22b‧‧‧表面 22b‧‧‧ surface
23‧‧‧中間層 23‧‧‧Intermediate
23a‧‧‧表面 23a‧‧‧ surface
24‧‧‧第2積層體 24‧‧‧2nd layered body
24a‧‧‧表面 24a‧‧‧ surface
24b‧‧‧貫通孔 24b‧‧‧through hole
25‧‧‧多晶矽層 25‧‧‧Polysilicon layer
25a‧‧‧晶矽層 25a‧‧ 矽 layer
25b‧‧‧多晶矽層 25b‧‧‧Polysilicon layer
25c‧‧‧多晶矽層 25c‧‧‧Polysilicon layer
26‧‧‧氮化矽層 26‧‧‧矽 nitride layer
26a‧‧‧氮化矽層 26a‧‧‧ layer of tantalum nitride
26b‧‧‧氮化矽層 26b‧‧‧layer of tantalum nitride
27‧‧‧多晶矽層 27‧‧‧Polysilicon layer
27a‧‧‧多晶矽層 27a‧‧‧Polysilicon layer
27b‧‧‧多晶矽層 27b‧‧‧Polysilicon layer
27c‧‧‧多晶矽層 27c‧‧‧Polysilicon layer
28‧‧‧氮化矽層 28‧‧‧矽 nitride layer
28a‧‧‧氮化矽層 28a‧‧‧ layer of tantalum nitride
28b‧‧‧氮化矽層 28b‧‧‧layer of tantalum nitride
31‧‧‧第1鏡面部 31‧‧‧1st mirror face
32‧‧‧第2鏡面部 32‧‧‧2nd mirror face
33‧‧‧被覆部 33‧‧‧The Ministry of Coverage
34‧‧‧周緣部 34‧‧‧The Peripheral Department
34a‧‧‧非薄化部 34a‧‧‧Non-thinning department
34b‧‧‧薄化部 34b‧‧‧ Thinning Department
34c‧‧‧表面 34c‧‧‧ surface
40a‧‧‧開口 40a‧‧‧ openings
41‧‧‧抗反射層 41‧‧‧Anti-reflective layer
42‧‧‧第3積層體 42‧‧‧3rd layer body
43‧‧‧中間層 43‧‧‧Intermediate
44‧‧‧第4積層體 44‧‧‧4th laminate
45‧‧‧遮光層 45‧‧‧Lighting layer
46‧‧‧保護層 46‧‧‧Protective layer
50‧‧‧除去預定部 50‧‧‧Remove the reservation department
60‧‧‧擴張片 60‧‧‧Expansion film
71‧‧‧封裝 71‧‧‧Package
71a‧‧‧開口 71a‧‧‧ Opening
72‧‧‧內表面 72‧‧‧ inner surface
72a‧‧‧底座 72a‧‧‧Base
73‧‧‧蓋 73‧‧‧ Cover
74‧‧‧側壁 74‧‧‧ side wall
75‧‧‧頂壁 75‧‧‧ top wall
75a‧‧‧內表面 75a‧‧‧ inner surface
76‧‧‧配線基板 76‧‧‧Wiring substrate
77‧‧‧光檢測器 77‧‧‧Photodetector
78‧‧‧間隔件 78‧‧‧ spacers
81‧‧‧引線接腳 81‧‧‧ lead pin
82‧‧‧導線 82‧‧‧Wire
83‧‧‧光透過構件 83‧‧‧Light transmission members
83a‧‧‧光入射面 83a‧‧‧light incident surface
83b‧‧‧光出射面 83b‧‧‧Light exit surface
83c‧‧‧側面 83c‧‧‧ side
84a‧‧‧光入射面 84a‧‧‧light incident surface
84b‧‧‧光出射面 84b‧‧‧Light exit surface
84c‧‧‧側面 84c‧‧‧ side
85‧‧‧接著構件 85‧‧‧Subsequent components
85a‧‧‧第1部分 85a‧‧‧Part 1
85b‧‧‧第2部分 85b‧‧‧Part 2
100‧‧‧晶圓 100‧‧‧ wafer
100A‧‧‧晶圓 100A‧‧‧ wafer
100a‧‧‧ =外緣 100a‧‧‧ = outer edge
101‧‧‧有效區域 101‧‧‧Active area
102‧‧‧虛設區域 102‧‧‧Dummy area
102a‧‧‧區域 102a‧‧‧Area
110‧‧‧基板層 110‧‧‧ substrate layer
110a‧‧‧第1表面 110a‧‧‧ first surface
110b‧‧‧第2表面 110b‧‧‧2nd surface
110c‧‧‧外緣 110c‧‧‧ outer edge
200‧‧‧器件層 200‧‧‧Device layer
210‧‧‧抗反射層 210‧‧‧Anti-reflective layer
220‧‧‧第1鏡面層 220‧‧‧1st mirror layer
230‧‧‧中間層 230‧‧‧Intermediate
240‧‧‧第2鏡面層 240‧‧‧2nd mirror layer
290‧‧‧第1槽 290‧‧‧1st slot
400‧‧‧應力調整層 400‧‧‧stress adjustment layer
410‧‧‧抗反射層 410‧‧‧Anti-reflective layer
420‧‧‧層 420‧‧ ‧
430‧‧‧層 430‧‧ ‧
440‧‧‧層 440‧‧ ‧
450‧‧‧遮光層 450‧‧‧Lighting layer
460‧‧‧保護層 460‧‧‧protection layer
470‧‧‧第2槽 470‧‧‧2nd slot
500‧‧‧檢查裝置 500‧‧‧Inspection device
510‧‧‧晶圓支持部 510‧‧‧ Wafer Support Department
520‧‧‧攝像部 520‧‧‧Photography Department
530‧‧‧標記部 530‧‧‧Marking Department
531‧‧‧墨水卡匣 531‧‧‧Ink card
531a‧‧‧壁部 531a‧‧‧ wall
531b‧‧‧壁部 531b‧‧‧ wall
531c‧‧‧貫通孔 531c‧‧‧through hole
531d‧‧‧貫通孔 531d‧‧‧through hole
531e‧‧‧外側面 531e‧‧‧Outside
532‧‧‧墨水 532‧‧‧Ink
532a‧‧‧墨水積存 532a‧‧‧Ink accumulation
533‧‧‧燈絲 533‧‧‧ filament
533a‧‧‧一端部 533a‧‧‧One end
533b‧‧‧另一端部 533b‧‧‧Other end
534‧‧‧金屬針 534‧‧‧Metal Needle
534a‧‧‧前端部 534a‧‧‧ front end
535‧‧‧推桿 535‧‧‧Put
535a‧‧‧圓柱狀之部分 535a‧‧‧Section of the cylinder
540‧‧‧控制部 540‧‧‧Control Department
M‧‧‧標記 M‧‧‧ mark
OF‧‧‧定向平面 OF‧‧‧ Orientation plane
RL‧‧‧基準線 RL‧‧ baseline
S‧‧‧空隙 S‧‧‧ gap
圖1係自一實施形態之晶圓切出之法布里-佩洛干涉濾光器之俯視圖。1 is a top plan view of a Fabry-Perot interference filter cut out from a wafer of one embodiment.
圖2係圖1所示之法布里-佩洛干涉濾光器之仰視圖。 Figure 2 is a bottom plan view of the Fabry-Perot interference filter shown in Figure 1.
圖3係沿圖1所示之Ⅲ-Ⅲ線之法布里-佩洛干涉濾光器之剖視圖。 Figure 3 is a cross-sectional view of the Fabry-Perot interference filter taken along line III-III of Figure 1.
圖4係自一實施形態之晶圓切出之虛設濾光器之剖視圖。 4 is a cross-sectional view of a dummy filter cut out from a wafer of an embodiment.
圖5係一實施形態之晶圓之俯視圖。 Figure 5 is a plan view of a wafer of an embodiment.
圖6係圖5所示之晶圓之一部分之放大俯視圖。 Figure 6 is an enlarged plan view of a portion of the wafer shown in Figure 5.
圖7(a)、(b)係圖5所示之法布里-佩洛干涉濾光器部及虛設濾光器部之剖視圖。 7(a) and 7(b) are cross-sectional views showing the Fabry-Perot interference filter portion and the dummy filter portion shown in Fig. 5.
圖8(a)、(b)係用以說明圖5所示之晶圓之製造方法之剖視圖。 8(a) and 8(b) are cross-sectional views for explaining the method of manufacturing the wafer shown in Fig. 5.
圖9(a)、(b)係用以說明圖5所示之晶圓之製造方法之剖視圖。 9(a) and 9(b) are cross-sectional views for explaining the method of manufacturing the wafer shown in Fig. 5.
圖10(a)、(b)係用以說明圖5所示之晶圓之製造方法之剖視圖。 10(a) and 10(b) are cross-sectional views for explaining the method of manufacturing the wafer shown in Fig. 5.
圖11(a)、(b)係用以說明圖5所示之晶圓之製造方法之剖視圖。 11(a) and 11(b) are cross-sectional views for explaining the method of manufacturing the wafer shown in Fig. 5.
圖12(a)、(b)係用以說明圖5所示之晶圓之製造方法之剖視圖。 12(a) and 12(b) are cross-sectional views for explaining the method of manufacturing the wafer shown in Fig. 5.
圖13(a)、(b)係用以說明圖5所示之晶圓之製造方法之剖視圖。 13(a) and 13(b) are cross-sectional views for explaining the method of manufacturing the wafer shown in Fig. 5.
圖14係實施一實施形態之檢查方法之檢查裝置之概略構成圖。 Fig. 14 is a schematic block diagram showing an inspection apparatus for carrying out an inspection method according to an embodiment.
圖15(a)、(b)係圖14所示之標記部之概略剖視圖。 15(a) and 15(b) are schematic cross-sectional views showing the marking portion shown in Fig. 14.
圖16係標記後之晶圓之俯視圖。 Figure 16 is a top plan view of the wafer after marking.
圖17(a)、(b)係已標記之法布里-佩洛干涉濾光器部之俯視圖。 17(a) and 17(b) are plan views of the marked Fabry-Perot interference filter portion.
圖18(a)、(b)係用以說明自圖5所示之晶圓切出法布里-佩洛干涉濾光器之方法之剖視圖。 18(a) and (b) are cross-sectional views for explaining a method of cutting a Fabry-Perot interference filter from the wafer shown in Fig. 5.
圖19(a)、(b)係用以說明自圖5所示之晶圓切出法布里-佩洛干涉濾光器之方法之剖視圖。 19(a) and 19(b) are cross-sectional views for explaining a method of cutting a Fabry-Perot interference filter from the wafer shown in Fig. 5.
圖20係具備法布里-佩洛干涉濾光器之光檢測裝置之剖視圖。 Figure 20 is a cross-sectional view of a light detecting device having a Fabry-Perot interference filter.
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2017
- 2017-11-24 JP JP2017226094A patent/JP6983633B2/en active Active
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- 2018-11-09 CN CN201880075390.5A patent/CN111480105B/en active Active
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| EP3715933B1 (en) | 2024-02-21 |
| CN111480105B (en) | 2022-05-31 |
| EP3715933A4 (en) | 2021-08-25 |
| US20200310104A1 (en) | 2020-10-01 |
| US11624902B2 (en) | 2023-04-11 |
| EP3715933A1 (en) | 2020-09-30 |
| WO2019102875A1 (en) | 2019-05-31 |
| JP6983633B2 (en) | 2021-12-17 |
| KR20200090846A (en) | 2020-07-29 |
| JP2019095669A (en) | 2019-06-20 |
| TWI791683B (en) | 2023-02-11 |
| FI3715933T3 (en) | 2024-03-22 |
| CN111480105A (en) | 2020-07-31 |
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