TW201913744A - 發光二極體 - Google Patents
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- TW201913744A TW201913744A TW107100493A TW107100493A TW201913744A TW 201913744 A TW201913744 A TW 201913744A TW 107100493 A TW107100493 A TW 107100493A TW 107100493 A TW107100493 A TW 107100493A TW 201913744 A TW201913744 A TW 201913744A
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- 238000000034 method Methods 0.000 claims abstract description 55
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 239000000463 material Substances 0.000 claims abstract description 39
- 238000005253 cladding Methods 0.000 claims abstract description 38
- 239000011162 core material Substances 0.000 claims description 70
- 238000002955 isolation Methods 0.000 claims description 22
- 239000012212 insulator Substances 0.000 claims description 19
- 238000000151 deposition Methods 0.000 claims description 11
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- 238000004519 manufacturing process Methods 0.000 abstract description 18
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 101
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 48
- 229910002601 GaN Inorganic materials 0.000 description 46
- 230000008569 process Effects 0.000 description 22
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- 235000012431 wafers Nutrition 0.000 description 8
- 239000003086 colorant Substances 0.000 description 7
- 239000002019 doping agent Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 238000005137 deposition process Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
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- 239000010931 gold Substances 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 229910003465 moissanite Inorganic materials 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- -1 InN Chemical compound 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 229910010093 LiAlO Inorganic materials 0.000 description 1
- 229910003811 SiGeC Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000003190 augmentative effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000009643 growth defect Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000013067 intermediate product Substances 0.000 description 1
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- 239000002086 nanomaterial Substances 0.000 description 1
- 239000002061 nanopillar Substances 0.000 description 1
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- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
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- 238000000059 patterning Methods 0.000 description 1
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- 125000006850 spacer group Chemical group 0.000 description 1
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- H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
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- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
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Abstract
本發明一般關於半導體結構,特別是關於發光二極體及製造方法。方法包含:在基板材料上形成具有摻雜核心區域的鰭式結構;藉由包覆鰭式結構的第一鰭式結構的摻雜核心區域而形成第一色彩發射區域,同時保護鰭式結構的第二鰭式結構及第三鰭式結構的摻雜核心區域;藉由包覆第二鰭式結構的摻雜核心區域而形成第二色彩發射區域,同時保護第一鰭式結構及第三鰭式結構的摻雜核心區域;以及藉由包覆第三鰭式結構的摻雜核心區域而形成第三色彩發射區域,同時保護第一鰭式結構及第二鰭式結構的摻雜核心區域。
Description
本發明一般關於半導體結構,特別是關於發光二極體及製造方法。
發光二極體(LED)用於許多不同類型裝置的顯示器中。LED顯示器可由不同材料(包含矽上氮化鎵(GaN-on-Si)或藍寶石)所組成的鰭式電晶體(finFET)結構製成。
LED的製造是個挑戰。舉例來說,GaN與矽具有晶格不匹配及熱不匹配,這可能造成結構中的應力,例如矽晶圓中的撓曲及破裂。再者,隨著銦(In)濃度的增加,GaN和Si之間的晶格不匹配也會增加。此外,In在GaN中的固態溶解度可能非常低,這導致GaN中的大量成長缺陷。
在本發明的一態樣中,方法包含:在基板材料上形成具有摻雜核心區域的鰭式結構;藉由包覆鰭式結構的第一鰭式結構的摻雜核心區域而形成第一色彩發射區域,同時保護鰭式結構的第二鰭式結構及第三鰭式結構的摻雜核心區域;藉由包覆第二鰭式結構的摻雜核心區域而形成第二色彩發射區域,同時保護第一鰭式結構及第三鰭式結構的摻雜核心區域;以及藉由包覆第三鰭式結構的摻雜核心區域而形成第三色彩發射區 域,同時保護第二鰭式結構及第一鰭式結構。
在本發明的一態樣中,方法包含:形成基板材料的鰭式結構;使鰭式結構凹陷,以形成凹陷鰭式結構;藉由沉積核心材料於凹陷鰭式結構上而在凹陷鰭式結構上形成摻雜核心區域;在尚未被包覆的核心區域上形成一硬式遮罩,同時留下至少一核心區域暴露以進行包覆;在至少一暴露的核心區域上形成交替包覆層;移除硬式遮罩;在交替包覆層及尚未被包覆的至少另一核心區域上形成另一硬式遮罩,同時留下至少另一核心區域暴露以進行包覆;以及在至少另一暴露的核心區域上形成交替包覆層。
在本發明的一態樣中,方法包含:形成基板材料的摻雜鰭式結構;藉由包覆摻雜鰭式結構的第一摻雜鰭式結構而形成第一色彩發射區域,同時保護剩餘的摻雜鰭式結構;藉由包覆摻雜鰭式結構的第二摻雜鰭式結構而形成第二色彩發射區域,同時保護第一摻雜鰭式結構及剩餘的摻雜鰭式結構;以及藉由包覆摻雜鰭式結構的第三摻雜鰭式結構而形成第三色彩發射區域,同時保護第一摻雜鰭式結構、第二摻雜鰭式結構及剩餘的摻雜鰭式結構。
10‧‧‧finFET結構
100‧‧‧基板
105‧‧‧鰭式結構
105’‧‧‧鰭式結構
108‧‧‧溝渠
110‧‧‧隔離區域
115‧‧‧凹部
115’‧‧‧凹部
120‧‧‧緩衝層
125‧‧‧核心區域
135‧‧‧鰭式結構
135’‧‧‧鰭式結構
135”‧‧‧鰭式結構
135’’’‧‧‧鰭式結構
140‧‧‧包覆層
140’‧‧‧InGaN層
140”‧‧‧GaN層
140’’’‧‧‧GaN層
142‧‧‧硬式遮罩
142’‧‧‧硬式遮罩
142”‧‧‧硬式遮罩
143‧‧‧開口
144‧‧‧量子井區域
144’‧‧‧量子井區域
144”‧‧‧量子井區域
145‧‧‧金屬層
147‧‧‧絕緣體層
150‧‧‧接觸
155‧‧‧反射鏡
在下面的詳細描述中,將透過本發明的範例性具體實施例的非限制性範例、參考所提到的複數個圖式來描述本發明。
圖1顯示除了其他特徵外的根據本發明態樣的即將形成的一鰭式結構及相應的製造程序;圖2A顯示除了其他特徵外的根據本發明態樣的凹陷鰭式結構及相應的製造程序;圖2B顯示除了其他特徵外的根據本發明態樣的在[111]平面中的蝕刻鰭式結構及相應的製造程序; 圖3顯示除了其他特徵外的根據本發明態樣的多重量子井(MQW)區域及相應的製造程序;圖4A顯示除了其他特徵外的根據本發明態樣的鰭式結構的選擇性包覆及相應的製造程序;圖4B顯示除了其他特徵外的根據本發明態樣的另一鰭式結構的選擇性包覆及相應的製造程序;圖4C顯示除了其他特徵外的根據本發明態樣的另一鰭式結構的選擇性包覆及相應的製造程序;圖5顯示除了其他特徵外的根據本發明態樣的包覆鰭式結構及相應的製造程序;圖6顯示除了其他特徵外的根據本發明態樣的對基板的接觸及相應的製造程序;圖7顯示除了其他特徵外的根據本發明態樣的對包覆鰭式結構的接觸及相應的製造程序;以及圖8顯示除了其他特徵外的根據本發明態樣的反射鏡及相應的製造程序。
本發明一般關於半導體結構,特別是關於發光二極體(LED)及製造方法。LED可包含用於顯示器的鰭式電晶體(finFET)。這些顯示器可用於可穿戴裝置中,例如用於虛擬實境(VR)/擴增實境(AR)的頭戴式顯示器等等。在具體實施例中,finFET結構係配置以發射多種顏色。配置可包含在多重量子井區域的各層中的不同百分比的銦(In)。特別地,In的百分比是變化的,以針對不同顏色的LEDs實現不同的能隙。更具體地說,In的不同百分比將產生不同的量子井能隙,其發射不同波長的光(即不同顏色的光)。
在具體實施例中,本文所述的結構及方法允許finFET結構 在GaN核心區域中具有最少量的缺陷。此外,本文所述的結構及方法的其他優點包含:(i)形成GaN奈米柱和奈米片,其產生零位錯、非極性小平面,在其上成長LED主動區;(ii)在傳統定向基板上產生非極性平面以獲得非極性定向的優點,而無昂貴基板的成本;(iii)3D主動區域,其降低與大電流操作相關的效率下滑;(iv)在Si或其他低成本基板上成長的奈米結構,以進一步降低製造成本;以及(v)在奈米片上的垂直多重量子井(MQW)的紅-綠-藍(RGB)成長。
本發明的結構可使用多種不同的工具、以多種方式來製造。然而,一般而言,使用方法和工具係用以形成尺寸在微米及奈米尺度的結構。用以製造本發明的結構的方法(即技術)採用自積體電路(IC)技術。舉例來說,結構係建立於晶圓上並實現於晶圓頂部上由光學微影製程所圖案化的材料薄膜中。特別地,結構的製造使用三個基本的建構部分:(i)在基板上沉積材料的薄膜,(ii)藉由光學微影成像在薄膜頂部施加圖案化光罩,以及(iii)對光罩選擇性地蝕刻薄膜。
圖1顯示根據本發明態樣的一結構及相應的製造程序。特別地,圖1顯示包含基板100的finFET結構10,其開始為用於發光二極體(LED)的奈米片。在具體實施例中,基板100可為任何合適的半導體材料,例如塊材矽、SiGe、SiGeC、SiC、6H-SiC、GaAs、GaN、GaP、InAs、InN、InP、AIN、AlAs、LiAlO2、藍寶石及其它III/V或II/VI族化合物半導體。基板100可藉由佈植製程或原位摻雜技術(例如藉由n型摻雜)來高度地摻雜。
鰭式結構105從基板100形成,其可個別地摻雜或已從基板100摻雜。鰭式結構105可藉由使用傳統圖案化製程蝕刻基板100而形成,例如使用傳統側壁影像轉移(SIT)製程或CMOS微影及蝕刻製程,其取決於鰭式結構105的最終寬度。舉例來說,除其它範例外,鰭式結構105的尺寸範圍可在約100奈米到200奈米之間,較佳為在約10奈米到50奈米之間。
在SIT技術中,作為一範例,使用傳統沉積製程(例如CVD) 形成一心軸於基板100上。心軸材料與基板100不同,例如SiO2。光阻劑形成於心軸材料上,並對光暴露以形成一圖案(開口)。通過開口執行RIE,以形成心軸。間隙壁形成於心軸的側壁上,其材料較佳為不同於心軸的材料,且其使用熟此技藝者所習知的傳統沉積製程來形成。舉例來說,間隙壁可具有與鰭式結構105的尺寸匹配的寬度。使用對心軸材料具有選擇性的傳統蝕刻製程將心軸移除或剝除。接著,在間隙壁的間隔內執行蝕刻,以形成次微影特徵。接著,可剝除側壁間隙壁。
隔離區域110形成於鰭式結構105之間。在具體實施例中,隔離區域110可為沉積於鰭式結構105之間的氧化物材料(例如SiO2)。在具體實施例中,隔離區域110由與之後形成的絕緣體層不同的材料所組成,其中絕緣體層將覆蓋部分的隔離區域110。可使用傳統的沉積製程(例如化學氣相沉積(CVD))來沉積隔離區域110至鰭式結構105的高度。在替代的具體實施例中,隔離區域110的材料可沉積至高於鰭式結構105的高度,接著進行研磨製程(例如化學機械研磨(CMP))到鰭式結構105的高度。
圖2A及2B顯示根據本發明態樣的額外結構。在圖2A中,鰭式結構105為凹陷的,亦即蝕刻基板100(如元件符號105’所表示)以在隔離區域110之間形成凹陷鰭式結構105’及凹部115。圖2B顯示在(111)平面中的基板100(例如凹陷鰭式結構105’),以在隔離區域110之間形成凹部115’。在圖2A及2B中,凹陷鰭式結構105’沒有完全移除,留下一部分的凹陷鰭式結構105’在基板100上,以用於後續製程。凹部115、115’可使用傳統的選擇性蝕刻製程(例如RIE製程)來形成。
圖3顯示在暴露的凹陷鰭式結構105’上成長於凹部115、115’內的替代鰭式結構135,即部分的多重量子井(MQW)區域。特別地,替代鰭式結構135包含緩衝層120及形成於緩衝層120上的核心區域125。因此,緩衝層120可形成於每一替代鰭式結構135的核心區域125與基板材料100(其蝕刻以形成凹陷鰭式結構105’)之間。在具體實施例中,緩衝層120可為例如 AlN,其也可使用作為基板100的材料。緩衝層120可由傳統沉積方法(例如CVD製程)沉積至約10奈米到100奈米的厚度;然而此處也可考慮其他尺寸。在其他具體實施例中,緩衝層120的厚度可在基板100的厚度的約1/5到1/10的範圍,其可例如具有約300奈米的厚度。
在沉積緩衝層120之後,藉由在凹陷鰭式結構上沉積核心材料而選擇性地成長核心區域125於緩衝層120上。核心區域125的核心材料可位氮化鎵(GaN),其用於發光二極體。熟此技藝者應理解到,GaN具有3.4eV的寬能隙,為其在光電子、高功率及高品裝置的應用上提供了特殊的性能。
如圖3進一步顯示,核心區域125可成長至隔離區域110的高度,即與隔離區域110同平面。此外,若核心區域125過度成長,即高於隔離區域110,則可藉由CMP製程將核心區域125研磨回到隔離區域110的表面。在具體實施例中,緩衝層120及核心區域125的沉積可發生在(111)平面以形成替代鰭。
更特別地,基板100的矽將具有(111)或(110)平面用於GaN成長,亦即核心區域125。這是因為矽(100)平面具有比(111)平面或(110)平面更多的缺陷。在具體實施例中,緩衝層120及核心區域125連同後續沉積的包覆層可用以形成量子井區域。熟此技藝者應理解到,量子井為僅具有離散能量值的電位井。用來說明量子井的古典模型是通過迫使粒子佔據一平面區域而將原本可在三維中自由移動的粒子限制在二維空間中。
圖3更顯示在形成包覆層之前的替代鰭式結構135的摻雜或離子佈植(即核心區域125),以形成摻雜的核心區域。在具體實施例中,摻雜可為使用各種方法以n型摻雜對核心區域125進行的高度摻雜。舉例來說,摻雜可為例如在核心區域125的成長期間的GaN材料的離子佈植或原位摻雜(即核心區域125)。在具體實施例中,可使用約15meV能量等級的n型摻雜物來進行摻雜,其中摻雜物電阻率為約0.002Ωcm。更特別地,摻雜核心區域為n型GaN材料。在另一範例中,可使用Mg作為n型摻雜物,其使用 160meV的能量等級並具有約0.2-2Ωcm的摻雜物電阻率。另一種選擇為,可使用Zn作為n型摻雜物,其能量等級約為340meV且摻雜物電阻率約為0.2-2Ωcm。
圖4A顯示在替代鰭式結構135之間凹陷的隔離區域110,其凹陷到在核心區域125中發生最小缺陷的深度。在具體實施例中,藉由傳統RIE製程以選擇性化學反應將隔離區域110凹陷至核心區域125的表面之下。換言之,凹陷隔離區域110將覆蓋在緩衝層120之上的GaN材料(例如核心區域125)中的缺陷。
圖4A更顯示在核心區域125上的包覆層的沉積。硬式遮罩142被施加在選擇的替代鰭式結構135上以保護替代鰭式結構135”、135’’’免於包覆層140的包覆。硬式遮罩142可為保護替代鰭式結構135”、135’’’免於被包覆的任何合適的硬式遮罩材料。在硬式遮罩142中形成開口143以暴露替代鰭式結構135'供包覆,特別是暴露替代鰭式結構135'的核心區域125,以由包覆層140進行包覆。藉由包覆核心區域125,形成量子井區域144(即第一色彩發射區域),而其他替代鰭式結構135”、135’’’則仍受保護,亦即替代鰭式結構135”、135’’’的核心區域125仍受保護。在此表示中,作為範例,量子井區域144可為藍色區域。在形成量子井區域144之後,可由氧氣灰化或其他傳統的剝除技術(stripant)來移除硬式遮罩142。
在圖4A中,多個包覆層140用以形成多重量子井區域144。在具體實施例中,量子井區域144由n型摻雜核心區域125(後摻雜製程)、與如本文所述的InGaN及GaN的交替層所組成的包覆層140所組成。舉例來說,包覆層140可由InGaN/GaN/InGaN/GaN材料的交替層(即交替的InGaN及GaN材料)所組成。更特別地,InGaN層140’沉積於核心區域125上、GaN層140”沉積於InGaN層140’上、接著為另一InGaN層140’。GaN層140’’’沉積於InGaN層140’上。GaN層140”可為n型GaN;而GaN層140’’’(即最上層的包覆層)可為p型(p+)GaN層,且可形成於另一包覆層140(即InGaN層140’及GaN層 140”)上。GaN層140’’’可用以在後續步驟中形成低電阻接觸。在具體實施例中,包覆層140的InGaN/GaN/InGaN/GaN的交替層可由傳統CVD製程來沉積。
在具體實施例中,InGaN層140’形成量子井,其可摻雜或可不摻雜。更特別地,替代鰭式結構135’的n型摻雜核心區域125作用為量子井(InGaN層)140’的緩衝區,而p型GaN層140’’’作用為量子井140’的帽蓋區域。在其他具體實施例中,這可顛倒過來,以n型摻雜核心區域125作為帽蓋區域,且以p型GaN層140’’’作為緩衝區。在具體實施例中,包覆層140(即層InGaN/GaN/InGaN/GaN)可各自具有約小於10奈米的厚度,且較佳在約3奈米到10奈米的範圍。
圖4B顯示另一替代鰭式結構135”的選擇性包覆,其中量子井區域144及剩餘的替代鰭式結構135’’’及其相應的核心區域125由另一硬式遮罩142’所保護。開口143形成於硬式遮罩142’中以暴露替代鰭式結構135”供包覆,特別是暴露替代鰭式結構135”的核心區域125供包覆。藉由沉積包覆層140(即InGaN層140’、GaN層140”及GaN層140’’’),且藉此包覆替代鰭式結構135”的核心區域125,將形成第二量子井區域144’。第二量子井區域144’為第二色彩發射區域,且可發射與第一色彩發射區域(即第一量子井區域144)所發射的顏色不同的顏色。不同包覆層140(即InGaN層140’、GaN層140”及GaN層140’’’)可由前文已述的方式(例如CVD製程)進行沉積。
圖4C顯示另一替代鰭式結構135”的選擇性包覆,其中量子井區域144、144’及其相應的核心區域125由另一硬式遮罩142”保護。開口143形成於硬式遮罩142”中,以暴露替代鰭式結構135’’’供包覆,特別是暴露替代鰭式結構135’’’的核心區域125供包覆。藉由沉積包覆層140(即InGaN層140’、GaN層140”及GaN層140’’’),且藉此包覆替代鰭式結構135’’’的核心區域125,將形成第三量子井區域144”。不同包覆層140(即InGaN層140’、GaN層140”及GaN層140’’’)可由本文中已述的方式(例如CVD製程)進行沉 積。
第三量子井區域144”為第三色彩發射區域,且可發射與第一及第二色彩發射區域(即第一量子井區域144及第二量子井區域144’)所發射的顏色不同的顏色。在此表示中,量子井區域144’、144”可分別為綠色區域及紅色區域;而量子井區域144為藍色區域。在具體實施例中,不同的色彩發射區域(即量子井區域144、144’、144”)具有用於不同顏色的不同能隙。
特別地,藉由改變銦(In)在包覆層140(量子井區域144、144’、144”)的井層(即InGaN層140’)中的百分比來實現不同的顏色。更特別地,In在量子井區域144、144’、144”的InGaN層140’中的百分比變化以實現用於不同顏色LED的不同能隙。舉例來說,x定義In在InxGa1-xN井層(即InGaN層140’)中的百分比(原子百分比)。針對在量子井區域144、144’、144”中的InxGa1-xN層的In的百分比可為如下:(1)藍,x=15-20%;(2)綠,x=25-30%;以及(3)紅,x=35-40%。
只要不同的能隙具有足夠的分離度,也可使用In的其他百分比。舉例來說,In的不同百分比將產生不同的量子井能隙,其發射不同波長的光(即不同顏色)。熟此技藝者應理解到,量子井區域144、144’、144”可不同地配置,例如分別為藍色區域、綠色區域、紅色區域。
圖5顯示根據本發明態樣的由絕緣體層147所覆蓋的量子井區域144、144’、144”。絕緣體層147可共形地沉積於GaN層140’’’上,即最上面的p型GaN層。在具體實施例中,舉例來說,絕緣體層147為絕緣材料,例如SiN或SiO2。較佳地,絕緣體層147的材料不同於隔離區域110的材料,例如SiO2,使得後續的蝕刻製程(例如隔離區域110的選擇性移除)可在不需額外遮罩步驟的情況下執行。藉由使量子井區域144、144’、144”絕緣,絕緣體層147使第一色彩發射區域、第二色彩發射區域及第三色彩發射區域絕緣。
圖6顯示形成與基板100接觸的金屬層145。在具體實施例中,為沉積金屬層145,由RIE製程形成溝渠或開口108於隔離區域110及絕緣體層147中。溝渠108將暴露部分的基板100供後續的接觸形成。金屬層145沉積在溝渠108中以及在不同替代鰭式結構135’、135”、135’’’的絕緣體層147之間(即在多重量子井區域144、144’、144”之間)。金屬層145可為鋁(Al),其作為對基板100的歐姆接觸。此外,金屬層145可為反射性金屬材料。金屬層145可由CVD製程來沉積,接著進行研磨CMP,以與量子井區域144、144’、144”的頂表面上的絕緣體層147共平面。
圖7顯示形成至p型GaN層140’’’的接觸。在具體實施例中,接觸150較佳為p型接觸,其與p型GaN層140’’’接觸並形成到p型GaN層140’’’的p型接面。舉例來說,接觸150可例如為鈀(Pd)、鎳(Ni)或金(Au)。在具體實施例中,接觸150可由傳統的微影、蝕刻及沉積製程形成。舉例來說,形成於絕緣體層147上的光阻劑暴露在能量(光)下以形成一開口。通過開口執行蝕刻製程(如RIE),以在絕緣體層147中形成貫穿孔,並暴露GaN層140’’’。接著,沉積用以形成接觸150的金屬層於貫穿孔中,接著(若需要的話)進行CMP製程。舉例來說,金屬接觸150可為銅或鋁。
在圖8中,藉由蝕刻金屬層145形成反射鏡155。特別地,反射鏡155由金屬層145的金屬材料組成,其也接觸基板材料100。這提供了整合的反射器/反射性塗層,且也作用為用於陰極的接觸。反射鏡155形成在不同替代鰭式結構135’、135”、135’’’的絕緣體層147之間,例如在多重量子井區域144、144’、144”之間。此外,反射鏡155接觸底下的基板100。如圖8所示,反射鏡155形成於鄰近包覆核心區域(即量子井144、144’、144”)之間,作為對基板材料100的接觸。
上述方法用於積體電路晶片的製造。所產生的積體電路晶片可由製造者以原始晶片的形式(即作為具有多個未封裝晶片的單晶圓)作為裸晶粒分送、或以封裝形式分送。在後者情況中,晶片安裝於單一晶片 封裝(例如塑料載體,具有固定至主機板或其他更高階載體的引線)中或安裝於多晶片封裝(如具有表面內連線或埋層內連線的其中一或兩者的陶瓷載體)中。在任何情況下,晶片接著與其他晶片、離散電路元件及/或其他信號處理裝置整合為(a)中間產品(例如主機板)、或(b)終端產品的部分。終端產品可為包含積體電路晶片的任何產品,其範圍從玩具到其他低端應用到具有顯示器、鍵盤或其他輸入裝置、及中央處理器的高級電腦產品。
已出於說明目的提出本發明的各種具體實施例的描述,但其並不意圖為詳盡的或受限於所揭露的具體實施例。在不偏離所述具體實施例的範疇及精神下,許多修改及變化對熟此技藝者而言是明顯的。本文所使用的術語係選擇以最佳地解釋具體實施例的原理、實際應用或針對市場上所發現技術的技術改良、或使其他熟此技藝者能夠理解本文所揭露的具體實施例。
Claims (20)
- 一種方法,包含:在一基板材料上形成具有一摻雜核心區域的多個鰭式結構;藉由包覆該等鰭式結構的一第一鰭式結構的該摻雜核心區域而形成一第一色彩發射區域,同時保護該等鰭式結構的一第二鰭式結構及一第三鰭式結構的該等摻雜核心區域;藉由包覆該第二鰭式結構的該摻雜核心區域而形成一第二色彩發射區域,同時保護該第一鰭式結構及該第三鰭式結構的該等摻雜核心區域;以及藉由包覆該第三鰭式結構的該摻雜核心區域而形成一第三色彩發射區域,同時保護該第一鰭式結構及該第二鰭式結構的該等摻雜核心區域。
- 如申請專利範圍第1項所述的方法,其中該第一鰭式結構、該第二鰭式結構、及該第三鰭式結構形成多個量子井。
- 如申請專利範圍第2項所述的方法,其中該第一鰭式結構、該第二鰭式結構及該第三鰭式結構的每一者的包覆包含沉積交替的InGaN材料及GaN材料的多個層,同時以一硬式遮罩保護沒有被包覆的該等鰭式結構。
- 如申請專利範圍第3項所述的方法,更包含形成一p型GaN層於該等包覆層上以及形成一絕緣體層於該p型GaN層上。
- 如申請專利範圍第1項所述的方法,更包含形成與該p型GaN層接觸的多個p型接觸。
- 如申請專利範圍第5項所述的方法,更包含在每一鰭式結構的該摻雜核心區域與被蝕刻以形成多個凹陷鰭式結構的該基板材料之間形成一緩衝層。
- 如申請專利範圍第6項所述的方法,其中該緩衝層為AlN。
- 如申請專利範圍第1項所述的方法,更包含在包覆該第一鰭式結構、該第二鰭式結構及該第三鰭式結構之前沉積該等鰭式結構。
- 如申請專利範圍第1項所述的方法,更包含在包覆該第一鰭式結構、該第二鰭式結構及該第三鰭式結構之後形成一絕緣體層,其使該第一色彩發射區域、該第二色彩發射區域及該第三色彩發射區域絕緣。
- 如申請專利範圍第9項所述的方法,更包含在該等鰭式結構的每一者之間形成多個隔離區域,該等隔離區域由不同於該絕緣體層的材料所組成。
- 如申請專利範圍第1項所述的方法,更包含在該等鰭式結構中的相鄰鰭式結構之間形成多個反射鏡。
- 如申請專利範圍第11項所述的方法,其中該等反射鏡由也接觸該基板材料的一金屬材料所組成。
- 一種方法,包含:形成基板材料的多個鰭式結構; 使該等鰭式結構凹陷,以形成多個凹陷鰭式結構;藉由沉積核心材料於該等凹陷鰭式結構上而在該等凹陷鰭式結構上形成多個摻雜核心區域;在尚未被包覆的多個核心區域上形成一硬式遮罩,同時留下至少一核心區域暴露以進行包覆;在該至少一暴露的核心區域上形成多個交替包覆層;移除該硬式遮罩;在該等交替包覆層及尚未被包覆的至少另一核心區域上形成另一硬式遮罩,同時留下至少另一核心區域暴露以進行包覆;以及在該至少另一暴露的核心區域上形成多個交替包覆層。
- 如申請專利範圍第13項所述的方法,其中該等交替包覆層形成一量子井。
- 如申請專利範圍第13項所述的方法,更包含:在該等核心區域之間形成多個隔離區域;以及蝕刻多個溝渠穿過該等隔離區域,其暴露該基板材料。
- 如申請專利範圍第15項所述的方法,更包含:在該等溝渠內及在該暴露的基板材料上沉積一金屬材料;以及在鄰近的多個包覆核心區域之間由該金屬材料形成多個反射鏡,作為對該基板材料的一接觸。
- 如申請專利範圍第13項所述的方法,更包含在該等摻雜核心區域下形成一緩衝層。
- 如申請專利範圍第17項所述的方法,其中該包覆包含交替InGaN及GaN材料,其中最上層為一p型GaN層。
- 如申請專利範圍第18項所述的方法,更包含:形成一絕緣體層於該p型GaN層上;蝕刻該絕緣體層以暴露該p型GaN層的一表面;以及在該p型GaN層的該暴露表面上形成多個接觸。
- 一種方法,包含:形成一基板材料的多個摻雜鰭式結構;藉由包覆該等摻雜鰭式結構的一第一摻雜鰭式結構而形成一第一色彩發射區域,同時保護剩餘的該等摻雜鰭式結構;藉由包覆該等摻雜鰭式結構的一第二摻雜鰭式結構而形成一第二色彩發射區域,同時保護該第一摻雜鰭式結構及剩餘的該等摻雜鰭式結構;以及藉由包覆該等摻雜鰭式結構的一第三摻雜鰭式結構而形成一第三色彩發射區域,同時保護該第一摻雜鰭式結構、該第二摻雜鰭式結構及剩餘的該等摻雜鰭式結構。
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