TW201809697A - Temperature control device for press-bonding unit of electronic component and testing device using the same capable of keeping the temperature difference between primary and secondary effect surfaces of a cooling chip within a better range - Google Patents

Temperature control device for press-bonding unit of electronic component and testing device using the same capable of keeping the temperature difference between primary and secondary effect surfaces of a cooling chip within a better range Download PDF

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TW201809697A
TW201809697A TW105119955A TW105119955A TW201809697A TW 201809697 A TW201809697 A TW 201809697A TW 105119955 A TW105119955 A TW 105119955A TW 105119955 A TW105119955 A TW 105119955A TW 201809697 A TW201809697 A TW 201809697A
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electronic component
temperature
crimping
unit
control device
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TW105119955A
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TWI561836B (en
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李子瑋
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鴻勁科技股份有限公司
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Abstract

Provided are a temperature control device for a press-bonding unit of an electronic component and a testing device using the same. The press-bonding unit has a movable arm capable of being driven by a driving source, and a press-bonding part is mounted on a head end of the movable arm. The temperature control device of the press-bonding unit is equipped with a temperature sensor and a cooling chip on the press-bonding part. A primary effect surface located on the lower part of the cooling chip is provided for temperature conduction to the electronic component. The secondary effect surface located on the upper part of the cooling chip is connected to at least one conducting member for temperature conduction, and the conducting member is inserted into a cooler capable of moving up and down. As a result, when the press-bonding part is employed to press and bond an electronic component to perform a testing operation, the position of the cooler can be adjusted according to the predetermined testing temperature range and the self-heat generated by the electronic component so as to control the temperature-reduction degree of the conducting member. Accordingly, the temperature difference between the secondary effect surface and the primary effect surface of the cooling chip is kept within a better range thereby effectively increasing the service life of the cooling chip.

Description

電子元件之壓接單元的溫控裝置及其應用的測試設備 Temperature control device for crimping unit of electronic component and test equipment applied thereto

本發明尤指其提供一種於電子元件執行測試作業時,可使致冷晶片之副效應面與主效應面的溫度差保持在較佳的範圍值內,進而有效提升致冷晶片使用壽命之電子元件之壓接單元的溫控裝置及其應用的測試設備。 The invention particularly relates to an electronic device which can maintain the temperature difference between the secondary effect surface and the main effect surface of the refrigerated wafer in a better range when the electronic component performs a test operation, thereby effectively improving the life of the refrigerated wafer. The temperature control device of the crimping unit of the component and its applied test equipment.

按,電子元件的測試作業均係於預設的測試溫度範圍內執行測試,當電子元件的溫度低於預設的測試溫度範圍時,壓接單元必須對該電子元件進行加熱(如高溫測試),當電子元件的溫度高於預設的測試溫度範圍時,壓接單元則必須對該電子元件進行冷卻(如低溫測試),以使電子元件的溫度保持在預設的測試溫度範圍內。為了使該壓接單元可因應不同電子元件的測試需求,以變換提供加熱或冷卻的動作,較早期係於壓接單元上裝設加熱片及低溫噴氣管路,而由加熱片對電子元件進行加熱的動作,低溫噴氣管路則對電子元件進行冷卻的動作,但由於低溫噴氣管路的冷卻方式會耗損相當多的低溫氣體。然而,隨著科技的進步,致冷晶片隨即被廣泛應用於壓接單元的加熱或冷卻的作動上。 Press, the test operations of electronic components are performed within the preset test temperature range. When the temperature of the electronic component is lower than the preset test temperature range, the crimping unit must heat the electronic component (such as high temperature test) When the temperature of the electronic component is higher than a preset test temperature range, the crimping unit must cool the electronic component (such as a low temperature test) to keep the temperature of the electronic component within the preset test temperature range. In order to make the crimping unit respond to the testing needs of different electronic components, and change the action of providing heating or cooling, a heating piece and a low-temperature air-blasting pipe were installed on the crimping unit earlier, and the electronic component was processed by the heating piece. In the heating operation, the low-temperature gas injection pipeline cools the electronic components. However, due to the cooling method of the low-temperature gas pipeline, a considerable amount of low-temperature gas is consumed. However, with the advancement of technology, refrigerated wafers are widely used for heating or cooling of the crimping unit.

請參閱第1圖,致冷晶片10其P型與N型之電熱半導體材料11、12主要係鉍(Bismuth)碲(Telluric)合金,電熱半導體材料11、12上方以銅質電極13銲接連結一體,下方則分別以銅質電極14、15連結於直流電源之正、負極,另具備絕緣性與導熱性之陶瓷基板16設於上方作為副效應面,以絕緣性與導熱 性之陶瓷基板17設於下方作為主效應面,而於直流電源通電時,電流由P型電熱半導體材料11流入N型半導體材料12時,熱能由下方流至上方,而於下方之陶瓷基板17的主效應面為吸熱端產生冷卻面,上方陶瓷基板16的副效應面則為放熱端,為了增加上方陶瓷基板16副效應面之散熱能力,另於陶瓷基板16之上方裝設散熱鰭片18;反之,若電流由N型電熱半導體材料12流入P型半導體材料11時,於下方陶瓷基板17的主效應面為放熱端產生加熱面,上方陶瓷基板16的副效應面則為吸熱端產生冷卻面,亦即電流方向相反時,放熱端與吸熱端為相反倒置。 Please refer to FIG. 1. The P-type and N-type electrothermal semiconductor materials 11 and 12 of the refrigerating wafer 10 are mainly Bismuth Telluric alloys. The electrothermal semiconductor materials 11 and 12 are welded and integrated by copper electrodes 13. The lower part is connected to the positive and negative electrodes of the DC power supply with copper electrodes 14, 15 respectively, and a ceramic substrate 16 with insulation and thermal conductivity is provided on the upper side as a secondary effect surface, with insulation and thermal conductivity. The ceramic substrate 17 is located at the bottom as the main effect surface. When the DC power is applied, the current flows from the P-type electrothermal semiconductor material 11 to the N-type semiconductor material 12 and the thermal energy flows from the bottom to the top. The main effect surface is a cooling surface for the heat absorption end, and the secondary effect surface for the upper ceramic substrate 16 is a heat release end. In order to increase the heat dissipation capacity of the secondary effect surface of the upper ceramic substrate 16, a heat dissipation fin 18 is installed above the ceramic substrate 16. On the contrary, if the current flows from the N-type electrothermal semiconductor material 12 into the P-type semiconductor material 11, the main effect surface of the lower ceramic substrate 17 is a heating surface generating heat, and the sub effect surface of the upper ceramic substrate 16 is cooling a heat absorbing end. The surface, that is, when the current direction is opposite, the heat release end and the heat absorption end are inverted.

請參閱第2圖,係為測試設備之測試單元20及壓接單元30之示意圖,該測試單元20係設有至少一具測試座22之測試電路板21,該測試電路板21並內建有測試程式,一可移動對應於測試單元20之壓接單元30,其係設有一可由驅動源驅動升降之移動臂31,並於該移動臂31下端連結裝設有壓接塊32,於電子元件23執行測試作業時,該移動臂31將會由驅動源驅動下降,而使壓接塊32壓抵於電子元件23的表面,以使得電子元件23之電性接點確保接觸到測試座22之電性接點,以順利執行測試作業。 Please refer to FIG. 2, which is a schematic diagram of the test unit 20 and the crimping unit 30 of the test equipment. The test unit 20 is provided with at least a test circuit board 21 having a test base 22, and the test circuit board 21 is built-in. The test program is a crimping unit 30 movable corresponding to the testing unit 20, which is provided with a moving arm 31 which can be driven by a driving source to move up and down, and a crimping block 32 is connected to the lower end of the moving arm 31, and the electronic component When performing the test operation, the moving arm 31 will be driven down by the driving source, so that the crimping block 32 is pressed against the surface of the electronic component 23, so that the electrical contact of the electronic component 23 is guaranteed to contact the Electrical contacts to perform test operations smoothly.

請參閱第3圖,該壓接單元30之溫控裝置係於壓接塊32連結設有一致冷晶片33,該致冷晶片33位於下方的主效應面係連結導溫至該壓接塊32,該致冷晶片33位於上方的副效應面則連結導溫於散熱鰭片34,另於壓接塊32的下方端面凸設有一感溫器35,該感溫器35並以線路將訊號連結至訊號轉換器36,訊號轉換器36再連結於中央控制單元40,該中央控制單元40並連結至一電源供應器37,該中央控制單元40係可控制電源供應器37輸出至致冷晶片33之電流方向及電流量,藉以控 制致冷晶片33下方主效應面之加熱或冷卻程度。當移動臂31帶動壓接塊32下壓電子元件23於測試座22執行測試作業時,感溫器35係接觸於電子元件23之表面,並將所感測到電子元件23之溫度訊號傳輸至訊號轉換器36,訊號轉換器36將溫度訊號轉換後再傳輸至中央控制單元40,中央控制單元40於接收該溫度訊號後即與預設的溫度範圍進行比對運算,並將比對運算後所獲致之溫差值轉換為致冷晶片33所需的電流方向及電流量,再由電源供應器37輸出所需的電流方向及電流量至致冷晶片33,而藉以控制致冷晶片33下方主效應面之加熱或冷卻程度。若感溫器35感測到待測之電子元件23的溫度低於預設的測試溫度範圍時,中央控制單元40控制溫控裝置之致冷晶片33作動,使下方主效應面為放熱端產生加熱面,並傳導至壓接塊32,而透過壓接塊32的傳導對電子元件23進行加熱。若感溫器35感測到待測之電子元件23的溫度高於預設的測試溫度範圍時,中央控制單元40即控制溫控裝置之致冷晶片33反向作動,使下方主效應面為吸熱端產生冷卻面,並傳導至壓接塊32,而透過壓接塊32的傳導對電子元件23進行冷卻降溫,至於致冷晶片33上方副效應面之放熱端則利用散熱鰭片34散熱;該利用致冷晶片33的溫控裝置,雖然在溫度的控制上可以快速的反應,但使用至今卻也出現致冷晶片33損壞率過高的問題,而影響致冷晶片33的使用效益。究其原因在於致冷晶片33的特性是吸熱端愈冷則放熱端愈熱,使得吸熱端與放熱端之間經常會產生溫度差過大的情形,進而導致致冷晶片33損壞率過高;例如電子元件23進行預設測試溫度為-20℃的低溫測試時,致冷晶片33下方主效應面需產生-20℃的冷卻面傳導至壓接塊32,但因電子元件23本身在測試的過程中會產生自熱(如120℃)而升溫超出預設的測試溫度範圍-20℃,使得致冷晶片 33下方主效應面需產生更低於-20℃的冷卻面,以抑制電子元件23本身所產生的自熱,相對的,致冷晶片33上方副效應面之放熱端便會產生更高的熱能,致使該致冷晶片33之上方副效應面與下方主效應面的溫度差更加擴大,致冷晶片33之上方副效應面雖然可利用散熱鰭片34散熱,惟該散熱鰭片34並無法隨著溫度差的變化而改變其散熱效果,使得致冷晶片33之上方副效應面與下方主效應面產生過大的溫度差,而容易導致致冷晶片33的損壞。再者,若電子元件23進行預設測試溫度為50℃的中高溫測試時,致冷晶片33下方主效應面即產生50℃的加熱面傳導至壓接塊32,然而因電子元件23本身在測試的過程中會產生自熱(如120°C)而升溫超出預設的測試溫度範圍50℃,使得致冷晶片33下方主效應面需要變換產生冷卻面,以抑制電子元件23本身所產生的自熱,相對的,致冷晶片33上方副效應面便會轉換成放熱端而產生熱能,致使該致冷晶片33之上方副效應面與下方主效應面的溫度差擴大,致冷晶片33之上方副效應面雖然可利用散熱鰭片34散熱,惟該散熱鰭片34並無法隨著溫度差的變化而改變其散熱效果,使得致冷晶片33之上方副效應面與下方主效應面仍產生過大的溫度差,而容易導致致冷晶片33的損壞。 Please refer to FIG. 3, the temperature control device of the crimping unit 30 is provided with a uniform cold chip 33 connected to the crimping block 32. The main effect surface of the cooling chip 33 located below is connected to conduct the temperature to the crimping block 32. The secondary effect surface of the cooling chip 33 located above is connected to the heat-conducting fin 34, and a temperature sensor 35 is convexly arranged on the lower end surface of the crimping block 32, and the temperature sensor 35 is connected to the signal by a line. To the signal converter 36, the signal converter 36 is further connected to the central control unit 40, which is connected to a power supply 37. The central control unit 40 can control the power supply 37 to output to the cooling chip 33. Current direction and current amount to control The degree of heating or cooling of the main effect surface below the cooling wafer 33. When the moving arm 31 drives the pressure contact block 32 to press the electronic component 23 to perform the test operation on the test base 22, the temperature sensor 35 contacts the surface of the electronic component 23 and transmits the temperature signal of the sensed electronic component 23 to the signal. Converter 36, the signal converter 36 converts the temperature signal and transmits it to the central control unit 40. After receiving the temperature signal, the central control unit 40 performs a comparison operation with a preset temperature range, and The obtained temperature difference value is converted into the current direction and current amount required for the cooling chip 33, and the required current direction and current amount are output from the power supply 37 to the cooling chip 33, so as to control the main effect below the cooling chip 33 Degree of surface heating or cooling. If the temperature sensor 35 detects that the temperature of the electronic component 23 to be measured is lower than the preset test temperature range, the central control unit 40 controls the cooling chip 33 of the temperature control device to operate, so that the main effect surface below is a heat generating end. The heating surface is conducted to the crimping block 32, and the electronic component 23 is heated by the conduction of the crimping block 32. If the temperature of the electronic component 23 to be measured is higher than the preset test temperature range by the temperature sensor 35, the central control unit 40 controls the cooling chip 33 of the temperature control device to operate in the reverse direction, so that the main effect surface below is The heat-absorbing end generates a cooling surface and conducts it to the crimping block 32, and cools and cools the electronic component 23 through the conduction of the crimping block 32. As for the heat-releasing end of the secondary effect surface above the cooling chip 33, the heat dissipation fins 34 are used to dissipate heat; Although the temperature control device using the cooling chip 33 can respond quickly in temperature control, the problem that the damage rate of the cooling chip 33 is too high has occurred so far, and the use efficiency of the cooling chip 33 is affected. The reason is that the characteristic of the cooling chip 33 is that the colder the heat absorbing end, the hotter the heat radiating end, so that the temperature difference between the heat absorbing end and the heat radiating end often causes an excessively large temperature difference, which in turn leads to an excessively high damage rate of the cooling wafer 33; for example, When the electronic component 23 performs a low-temperature test with a preset test temperature of -20 ° C, the main effect surface under the cooling chip 33 needs to generate a cooling surface of -20 ° C to conduct to the crimp block 32, but because the electronic component 23 itself is in the process of testing, It will generate self-heating (such as 120 ° C) and the temperature rises beyond the preset test temperature range of -20 ° C, so that the wafer is cooled. The main effect surface below 33 needs to generate a cooling surface lower than -20 ° C to suppress the self-heating of the electronic component 23 itself. In contrast, the heat dissipation end of the secondary effect surface above the cooling chip 33 will generate higher thermal energy. , Which causes the temperature difference between the secondary effect surface above the cooling chip 33 and the primary effect surface below to further expand. Although the secondary effect surface above the cooling chip 33 can use the heat dissipation fins 34 to dissipate heat, the heat dissipation fins 34 cannot follow The heat dissipation effect is changed according to the change of the temperature difference, which causes an excessively large temperature difference between the sub effect surface above and the main effect surface below the refrigerating wafer 33, which may easily cause damage to the refrigerating wafer 33. Furthermore, if the electronic component 23 performs a medium-high temperature test with a preset test temperature of 50 ° C, the main effect surface under the cooling chip 33 will generate a heating surface of 50 ° C to conduct to the crimping block 32, but because the electronic component 23 itself is During the test, self-heating (such as 120 ° C) is generated and the temperature rises beyond the preset test temperature range by 50 ° C, so that the main effect surface under the cooling chip 33 needs to be changed to generate a cooling surface to suppress the generation of the electronic component 23 itself. Self-heating, in contrast, the secondary effect surface above the cooling chip 33 will be converted into a heat-dissipating end to generate thermal energy, which causes the temperature difference between the secondary effect surface above the cooling chip 33 and the main effect surface below to widen. Although the upper side effect surface can be dissipated by the heat dissipation fin 34, the heat dissipation effect of the heat dissipation fin 34 cannot be changed with the change of the temperature difference, so that the upper side effect surface and the main side effect surface of the cooling chip 33 are still generated. An excessive temperature difference may easily cause damage to the cooling wafer 33.

有鑑於此,本發明人遂以其多年從事相關行業的研發與製作經驗,針對目前所面臨之問題深入研究,經過長期努力之研究與試作,終究研創出一種不僅可使致冷晶片之副效應面與主效應面的溫度差保持在較佳的範圍值內,進而有效提升致冷晶片使用壽命,以有效改善先前技術之缺點,此即為本發明之設計宗旨。 In view of this, the inventor then used his many years of research and development and production experience in related industries to conduct in-depth research on the current problems. After long-term research and trial work, he finally developed a side effect that not only can make the cooling chip The temperature difference between the surface and the main effect surface is maintained in a better range, thereby effectively improving the life of the refrigerated wafer and effectively improving the disadvantages of the prior art, which is the design purpose of the present invention.

本發明之目的一,係提供一種電子元件之壓接單元的溫控裝置,該壓接單元係具有一可由驅動源驅動之移動臂,於該移 動臂頭端則裝設有壓接部;其中,該壓接單元的溫控裝置係於該壓接部裝設有感溫器及致冷晶片,該致冷晶片位於下方的主效應面係導溫至電子元件,該致冷晶片位於上方的副效應面則連結導溫於至少一傳導件,並使該傳導件穿設於一可移動之冷卻器;藉此,即可利用調整冷卻器的位置,而得以調控該傳導件的降溫程度,使該致冷晶片之副效應面與該主效應面的溫度差保持在較佳的範圍值內,進而有效提升致冷晶片之使用壽命。 An object of the present invention is to provide a temperature control device for a crimping unit of an electronic component. The crimping unit has a moving arm which can be driven by a driving source. The head end of the boom is provided with a crimping portion; wherein the temperature control device of the crimping unit is provided with a temperature sensor and a cooling chip on the crimping portion, and the main effect surface system of the cooling chip is located below The temperature is conducted to the electronic components, and the secondary effect surface of the refrigerating chip located above is connected to the at least one conductive member, and the conductive member is passed through a movable cooler; thereby, the cooler can be adjusted by using The temperature of the conductive member can be adjusted to keep the temperature difference between the secondary effect surface and the main effect surface of the cooling chip in a better range, thereby effectively improving the life of the cooling chip.

本發明之目的二,係提供一種應用該電子元件之壓接單元的溫控裝置的測試設備,該測試設備係包含有供料單元、收料單元、輸送單元、測試單元、壓接單元及中央控制單元,該供料單元係用以容納至少一待測之電子元件,該收料單元則用以容納至少一完測之電子元件,該輸送單元係設有至少一具移料器之移料裝置,用以移載待測/完測之電子元件,該測試單元係設有具測試座之測試電路板,以對該電子元件執行測試作業,並將測試結果傳輸至中央控制單元,另設有壓接電子元件之壓接單元,該壓接單元並設有溫控裝置,使該電子元件於預設的測試溫度範圍內執行測試作業,該中央控制單元係控制各單元作動;藉此,當壓接單元壓接電子元件執行測試作業時,該溫控裝置即可依據預設的測試溫度範圍及電子元件所產生的自熱調整冷卻器的位置,並得以調控該傳導件的降溫程度,使該致冷晶片之副效應面與該主效應面的溫度差保持在較佳的範圍值內,進而有效提升致冷晶片之使用壽命。 A second object of the present invention is to provide a testing device for applying a temperature control device of a crimping unit of the electronic component. The testing device includes a feeding unit, a receiving unit, a conveying unit, a testing unit, a crimping unit, and a central unit. A control unit, the feeding unit is used to contain at least one electronic component to be tested, the receiving unit is used to contain at least one electronic component to be tested, and the conveying unit is provided with at least one material moving device Device for transferring electronic components to be tested / completed. The test unit is provided with a test circuit board with a test stand to perform test operations on the electronic components and transmit the test results to the central control unit. There is a crimping unit for crimping electronic components. The crimping unit is also provided with a temperature control device to enable the electronic component to perform a test operation within a preset test temperature range. The central control unit controls the operation of each unit; thereby, When the crimping unit crimps the electronic component to perform the test operation, the temperature control device can adjust the position of the cooler according to the preset test temperature range and the self-heat generated by the electronic component, and obtain In order to regulate the degree of temperature reduction of the conductive member, the temperature difference between the secondary effect surface and the main effect surface of the refrigerated wafer can be maintained in a better range, thereby effectively improving the life of the refrigerated wafer.

習知部份: Learning part:

10‧‧‧致冷晶片 10‧‧‧Refrigerated chip

11‧‧‧P型電熱半導體材料 11‧‧‧P-type electrothermal semiconductor material

12‧‧‧N型電熱半導體材料 12‧‧‧N-type electrothermal semiconductor material

13‧‧‧銅質電極 13‧‧‧copper electrode

14‧‧‧銅質電極 14‧‧‧copper electrode

15‧‧‧銅質電極 15‧‧‧copper electrode

16‧‧‧陶瓷基板 16‧‧‧ceramic substrate

17‧‧‧陶瓷基板 17‧‧‧ceramic substrate

18‧‧‧散熱鰭片 18‧‧‧ cooling fins

20‧‧‧測試單元 20‧‧‧Test unit

21‧‧‧測試電路板 21‧‧‧test circuit board

22‧‧‧測試座 22‧‧‧Test Block

23‧‧‧電子元件 23‧‧‧Electronic components

30‧‧‧壓接單元 30‧‧‧Crimping unit

31‧‧‧移動臂 31‧‧‧ mobile arm

32‧‧‧壓接塊 32‧‧‧ Crimp Block

33‧‧‧致冷晶片 33‧‧‧Refrigerated chip

34‧‧‧散熱鰭片 34‧‧‧Cooling Fin

35‧‧‧感溫器 35‧‧‧Temperature sensor

36‧‧‧訊號轉換器 36‧‧‧Signal Converter

37‧‧‧電源供應器 37‧‧‧ Power Supply

40‧‧‧中央控制單元 40‧‧‧ Central Control Unit

本發明部份: Part of the invention:

60‧‧‧壓接單元 60‧‧‧Crimping unit

61‧‧‧移動臂 61‧‧‧ Mobile arm

62‧‧‧壓接部 62‧‧‧ Crimping Department

621‧‧‧框座 621‧‧‧frame

622‧‧‧壓接塊 622‧‧‧ Crimp Block

64‧‧‧感溫器 64‧‧‧Temperature sensor

65‧‧‧致冷晶片 65‧‧‧Refrigerated chip

66‧‧‧訊號轉換器 66‧‧‧Signal Converter

67‧‧‧電源供應器 67‧‧‧Power Supply

68‧‧‧傳導件 68‧‧‧Conductor

681‧‧‧連結座 681‧‧‧ Link Block

682‧‧‧加熱器 682‧‧‧heater

69‧‧‧冷卻器 69‧‧‧cooler

70‧‧‧中央控制單元 70‧‧‧ Central Control Unit

80‧‧‧測試單元 80‧‧‧test unit

81‧‧‧測試電路板 81‧‧‧test circuit board

82‧‧‧測試座 82‧‧‧Test Block

83‧‧‧電子元件 83‧‧‧Electronic components

90‧‧‧供料單元 90‧‧‧feeding unit

91‧‧‧料盤 91‧‧‧ tray

100‧‧‧收料單元 100‧‧‧Receiving unit

101‧‧‧料盤 101‧‧‧ tray

110‧‧‧輸送單元 110‧‧‧conveying unit

111‧‧‧第一移料裝置 111‧‧‧The first transfer device

1111‧‧‧第一移料器 1111‧‧‧The first feeder

112‧‧‧載送裝置 112‧‧‧ delivery device

1121‧‧‧載台 1121‧‧‧carriage

113‧‧‧第二移料裝置 113‧‧‧Second material transfer device

1131‧‧‧第二移料器 1131‧‧‧second feeder

第1圖:習知致冷晶片之示意圖。 Figure 1: Schematic diagram of a conventional cooling wafer.

第2圖:習知測試設備之測試單元及壓接單元的示意圖。 Figure 2: Schematic diagram of the test unit and crimping unit of the conventional test equipment.

第3圖:習知壓接單元之溫控裝置的動作示意圖。 Fig. 3: Schematic diagram of the temperature control device of the conventional crimping unit.

第4圖:本發明壓接單元之示意圖。 FIG. 4 is a schematic diagram of a crimping unit of the present invention.

第5圖:本發明測試單元及壓接單元之示意圖。 FIG. 5 is a schematic diagram of a test unit and a crimping unit of the present invention.

第6圖:本發明壓接單元之溫控裝置的動作示意圖(一)。 Fig. 6: Schematic diagram of the temperature control device of the crimping unit of the present invention (1).

第7圖:本發明壓接單元之溫控裝置的動作示意圖(二)。 Fig. 7: Schematic diagram of the temperature control device of the crimping unit of the present invention (2).

第8圖:本發明壓接單元之溫控裝置的動作示意圖(三)。 Fig. 8: Schematic diagram of the temperature control device of the crimping unit of the present invention (3).

第9圖:本發明壓接單元之溫控裝置的另一實施例示意圖。 FIG. 9 is a schematic diagram of another embodiment of the temperature control device of the crimping unit of the present invention.

第10圖:本發明測試設備之架構示意圖。 Figure 10: Schematic diagram of the test equipment of the present invention.

為使 貴審查委員對本發明作更進一步之瞭解,茲舉較佳實施例並配合圖式,詳述如后:請參閱第4圖,本發明電子元件之壓接單元60係具有一可由驅動源驅動之移動臂61,於該移動臂61頭端則設有下壓電子元件之壓接部62,於本實施例中,該壓接部62係設有一連接裝設於移動臂61之框座621,以及位於該框座621下方之壓接塊622;其中,該壓接單元60的溫控裝置係於該壓接部62裝設有感溫器64及致冷晶片65,該致冷晶片65係可裝設於該壓接部62之端面,以直接壓接電子元件並傳導溫度,而感溫器64則伸縮凸伸出該致冷晶片65之端面,以感測電子元件的溫度;或該致冷晶片65可裝設於該壓接部62內,透過壓接部62壓接電子元件並傳導溫度,而感溫器64則伸縮凸伸出該壓接部62之端面,以感測電子元件的溫度;於本實施例中,該致冷晶片65係裝設於壓接部62之框座621內,並透過壓接部62之壓接塊622壓接電子元件並傳導溫度,而感溫器64則伸縮凸伸出該壓接塊622之端面;另該感溫器64係以線路將訊號連結至中央控制單元70,於本實施例中,該感溫器64係以線路將訊號連結至訊號轉換器66,該訊號轉換器66再連結於中央控制單元7 0,該中央控制單元70並連結至一電源供應器67,而由該中央控制單元70控制該電源供應器67輸出至致冷晶片65之電流方向及電流量,藉以控制致冷晶片65之加熱或冷卻程度;該致冷晶片65位於下方的主效應面係連結導溫至電子元件,該致冷晶片65位於上方的副效應面則連結導溫於至少一傳導件68,於本實施例中,該致冷晶片65位於下方的主效應面係連結導溫至框座621,並透過框座621將致冷晶片65位於下方的主效應面導溫至該壓接塊622,該致冷晶片65位於上方的副效應面則連結導溫於複數個傳導件68,該複數個傳導件68係以一連結座681連結裝設於致冷晶片65位於上方的副效應面,而可利用該連結座681將致冷晶片65位於上方的副效應面導溫至該複數個傳導件68,另該複數個傳導件68係穿設於一可移動之冷卻器69的內部,而使該冷卻器69可改變該複數個傳導件68的熱傳導距離或是於冷卻器69內的熱交換面積,而調整對致冷晶片65位於上方的副效應面的降溫程度,於本實施例中,該冷卻器69係可升降移動,而上升遠離或下降接近於致冷晶片65位於上方的副效應面,當冷卻器69上升遠離或下降接近於致冷晶片65的副效應面時,即可改變該複數個傳導件68的熱傳導距離或是於冷卻器69內的熱交換面積,而調整對致冷晶片65位於上方的副效應面的降溫程度,於本實施例中,該冷卻器69係連接於冷源供應器(圖式未示),而使該冷卻器69可保持在-20℃的低溫狀態,另該冷卻器69係由升降器(圖式未示)驅動升降,該升降器則由中央控制單元70控制升降作動,由於該升降器的種類繁多且為習知技術,故在此不與贅述;當該冷卻器69由中央控制單元70控制升降作動而遠離致冷晶片65位於上方的副效應面時,該複數個傳導件68將以較長的熱傳導距離或是以較小的熱交換面積與冷卻器69作冷熱交換, 而使該致冷晶片65位於上方的副效應面作較小程度的降溫;相對的,當該冷卻器69由中央控制單元70控制升降作動而接近致冷晶片65位於上方的副效應面時,該複數個傳導件68將以較短的熱傳導距離或是以較大的熱交換面積與冷卻器69作冷熱交換,而使該致冷晶片65位於上方的副效應面作較大程度的降溫。 In order to make your reviewing committee further understand the present invention, the preferred embodiment will be described in detail with reference to the drawings as follows: Please refer to FIG. 4. The crimping unit 60 of the electronic component of the present invention has a drive source The driven moving arm 61 is provided with a crimping portion 62 for pressing down the electronic component at the head end of the moving arm 61. In this embodiment, the crimping portion 62 is provided with a frame base connected to the moving arm 61. 621, and a crimping block 622 located below the frame base 621; wherein the temperature control device of the crimping unit 60 is mounted on the crimping portion 62 with a temperature sensor 64 and a cooling chip 65, and the cooling chip The 65 series can be installed on the end surface of the crimping portion 62 to directly crimp the electronic component and transmit the temperature, and the temperature sensor 64 extends and protrudes from the end surface of the cooling chip 65 to sense the temperature of the electronic component; Or, the cooling chip 65 may be installed in the crimping portion 62, and the electronic component is crimped through the crimping portion 62 to conduct the temperature, and the temperature sensor 64 is extended and protruding to the end surface of the crimping portion 62, so that Measure the temperature of the electronic component; in this embodiment, the cooling chip 65 is installed in the frame base 621 of the crimping portion 62, The electronic component is crimped through the crimping block 622 of the crimping portion 62 and the temperature is transmitted, and the temperature sensor 64 is extended and extended to protrude from the end surface of the crimping block 622; the temperature sensor 64 is connected to the center by a line The control unit 70, in this embodiment, the temperature sensor 64 is connected to the signal converter 66 by a line, and the signal converter 66 is further connected to the central control unit 7 0, the central control unit 70 is connected to a power supply 67, and the central control unit 70 controls the direction and amount of current output by the power supply 67 to the cooling chip 65, so as to control the heating of the cooling chip 65 Or the degree of cooling; the main effect surface on which the cooling chip 65 is located below is connected to conduct heat to the electronic component, and the side effect surface on which the cooling chip 65 is located above is connected to conduct heat to at least one conductive member 68. In this embodiment, The main effect surface of the cooling chip 65 below is connected and guided to the frame base 621, and the main effect surface of the cooling chip 65 below is guided to the pressure contact block 622 through the frame base 621. The secondary effect surface 65 located on the upper side is connected to the temperature conducting to a plurality of conductive members 68, and the plurality of conductive members 68 are connected to the secondary effect surface on the refrigerating chip 65 located on the upper side by a connection seat 681, and the connection can be used. The seat 681 guides the secondary effect surface of the cooling chip 65 above to the plurality of conductive members 68, and the plurality of conductive members 68 are penetrated inside a movable cooler 69, so that the cooler 69 The heat transfer of the plurality of conductive members 68 can be changed The conduction distance or the heat exchange area in the cooler 69 adjusts the degree of cooling of the side effect surface of the refrigerating chip 65 located above. In this embodiment, the cooler 69 can move up and down, and rise away from or The falling is close to the side effect surface of the cooling chip 65. When the cooler 69 rises away from or drops close to the side effect surface of the cooling chip 65, the heat conduction distance of the plurality of conductive members 68 may be changed or cooled. The heat exchange area in the cooler 69 adjusts the degree of cooling of the side effect surface of the cooling chip 65 located above. In this embodiment, the cooler 69 is connected to a cold source supplier (not shown), and The cooler 69 can be maintained at a low temperature of -20 ° C. In addition, the cooler 69 is driven by a lifter (not shown) for lifting, and the lifter is controlled by the central control unit 70 for lifting operation. There are many types and are known techniques, so I won't go into details here; when the cooler 69 is controlled by the central control unit 70 to move up and down and away from the side effect surface of the cooling chip 65 located above, the plurality of conductive members 68 will With longer heat conduction Or from a smaller heat exchange area 69 and the cooler for cold and hot, The side effect surface on which the cooling chip 65 is located above is reduced to a small degree; in contrast, when the cooler 69 is controlled by the central control unit 70 to move up and down to approach the side effect surface on the cooling chip 65, The plurality of conductive members 68 will perform cold and heat exchange with the cooler 69 with a short heat conduction distance or with a large heat exchange area, so that the side effect surface of the refrigerating chip 65 located above will cool down to a greater extent.

請參閱第5圖,係為測試設備之測試單元80及壓接單元60之示意圖,該測試單元80係設有至少一具測試座82之測試電路板81,該測試座82係供承置電子元件83,以對該電子元件83執行測試作業;執行測試作業之測試程式係可內建於測試電路板81,該測試電路板81並將測試結果傳輸至中央控制單元70,或執行測試作業之測試程式內建於測試機(圖式未示),該測試機並將測試結果傳輸至中央控制單元70;於本實施例中,該測試座82係透過測試電路板81內建之測試程式對該電子元件83執行測試作業,並將測試結果傳輸至中央控制單元70;本發明之壓接單元60係於電子元件83執行測試作業時,該移動臂61將會由驅動源驅動下降,而使壓接部62壓接於電子元件83的表面,以使得電子元件83之電性接點確保接觸到測試座82之電性接點,以順利執行測試作業。 Please refer to FIG. 5, which is a schematic diagram of the test unit 80 and the crimping unit 60 of the test equipment. The test unit 80 is provided with at least a test circuit board 81 with a test base 82, which is used to house electronics. Component 83 to perform a test operation on the electronic component 83; a test program for performing the test operation may be built in a test circuit board 81 which transmits the test result to the central control unit 70 or performs a test operation The test program is built in a test machine (not shown), and the test machine transmits the test results to the central control unit 70. In this embodiment, the test base 82 is a test program pair built in the test circuit board 81 The electronic component 83 performs a test operation and transmits the test result to the central control unit 70. When the crimping unit 60 of the present invention performs the test operation on the electronic component 83, the moving arm 61 will be driven down by the driving source, so that The crimping portion 62 is crimped to the surface of the electronic component 83, so that the electrical contact of the electronic component 83 is ensured to contact the electrical contact of the test base 82, so that the test operation can be performed smoothly.

請參閱第6圖,若以預設的測試溫度範圍100℃±10°C的高溫測試為例,當壓接單元60之壓接部62以壓接塊622壓接於電子元件83的表面時,感溫器64會將所感測到電子元件83之溫度訊號傳輸至訊號轉換器66,訊號轉換器66將溫度訊號轉換後再傳輸至中央控制單元70,中央控制單元70於接收該溫度訊號後即與預設的測試溫度範圍進行比對運算,並將比對運算後所獲致之溫差值轉換為致冷晶片65所需的電流方向及電流量,再由電源供應器67輸出所需的電流方向及電流量至致冷晶片6 5,而藉以控制致冷晶片65下方主效應面之加熱或冷卻程度。由於電子元件83初期的溫度低於預設的測試溫度範圍100℃±10℃,因此中央控制單元70將會控制電源供應器67輸出所需的電流方向及電流量至致冷晶片65,令該致冷晶片65作動,而使該致冷晶片65下方主效應面為放熱端產生加熱面,並傳導至壓接塊622,而透過壓接塊622的傳導對電子元件83進行加熱。當電子元件83加熱至預設的測試溫度範圍100℃±10℃時,該電子元件83即開始執行測試作業,但在執行測試作業的過程中,因電子元件83本身會產生自熱(如120℃)而升溫超出預設的測試溫度範圍100℃±10℃,由於電子元件83僅小幅度超出預設的測試溫度範圍,因此電源供應器67將改變輸出所需的電流方向及電流量至致冷晶片65,該致冷晶片65即以小功率作動,使下方主效應面為吸熱端產生冷卻面,並傳至壓接塊622,而透過壓接塊622的傳導抑制電子元件83的自熱,使該電子元件83降溫至預設的測試溫度範圍100℃±10℃內。由於該致冷晶片65以小功率作動,使下方主效應面為吸熱端產生冷卻面,相對的,該致冷晶片65位於上方的副效應面則以小功率轉換為放熱端而產生稍高溫的加熱面,此時該冷卻器69由中央控制單元70控制上升作動而遠離致冷晶片65上方副效應面的位置(A),該複數個傳導件68即以較長的熱傳導距離或是以較小的熱交換面積與冷卻器69作冷熱交換,而使該致冷晶片65位於上方的副效應面作較小程度的降溫,該致冷晶片65位於上方之副效應面與該位於下方之主效應面的溫度差即可保持在較佳的範圍值內,進而有效提升致冷晶片之使用壽命。 Please refer to FIG. 6. If a high temperature test with a preset test temperature range of 100 ° C. ± 10 ° C. is taken as an example, when the crimping portion 62 of the crimping unit 60 is crimped to the surface of the electronic component 83 by the crimping block 622. The temperature sensor 64 transmits the sensed temperature signal of the electronic component 83 to the signal converter 66. The signal converter 66 converts the temperature signal and then transmits it to the central control unit 70. The central control unit 70 receives the temperature signal after receiving the temperature signal. That is, a comparison operation is performed with a preset test temperature range, and the temperature difference obtained after the comparison operation is converted into a current direction and an amount of current required for the cooling chip 65, and then the power supply 67 outputs the required current Direction and amount of current to the cooling chip 6 5 to control the degree of heating or cooling of the main effect surface below the cooling chip 65. Since the initial temperature of the electronic component 83 is lower than the preset test temperature range of 100 ° C ± 10 ° C, the central control unit 70 will control the power supply 67 to output the required current direction and current amount to the cooling chip 65, so that the The cooling wafer 65 is operated, so that the main effect surface under the cooling wafer 65 is a heating surface to generate a heating surface, and is transmitted to the crimping block 622, and the electronic component 83 is heated by the conduction of the crimping block 622. When the electronic component 83 is heated to a preset test temperature range of 100 ° C ± 10 ° C, the electronic component 83 starts to perform the test operation. However, during the execution of the test operation, the electronic component 83 itself generates heat (such as 120). ℃) and the temperature rises beyond the preset test temperature range of 100 ° C ± 10 ° C. Since the electronic component 83 exceeds the preset test temperature range only slightly, the power supply 67 will change the direction and amount of current required for the output to The cold chip 65 is operated with low power, so that the main effect surface below is a heat-absorbing end to generate a cooling surface, and is transmitted to the crimping block 622, and the conduction of the crimping block 622 suppresses the self-heating of the electronic component 83 To cool the electronic component 83 to a preset test temperature range of 100 ° C ± 10 ° C. Because the cooling chip 65 is operated with low power, the main effect surface below is a cooling surface for the heat absorption end. In contrast, the side effect surface of the cooling chip 65 located at the upper side is converted to a heat radiation end with a small power and generates a slightly high temperature. The heating surface, at this time, the cooler 69 is controlled by the central control unit 70 to move upward and away from the position (A) of the side effect surface above the refrigerating chip 65. The plurality of conductive members 68 is a longer heat conduction distance or The small heat exchange area exchanges cold and heat with the cooler 69, so that the side effect surface of the cooling chip 65 located above is reduced to a small degree, the side effect surface of the cooling chip 65 located above and the main surface located below The temperature difference on the effect surface can be kept in a better range, thereby effectively improving the life of the refrigerated wafer.

請參閱第7圖,若以預設的測試溫度範圍50℃±10℃的中高溫測試為例,當壓接單元60之壓接塊622壓接於電子元件83的表面時,感溫器64會將所感測到電子元件83之溫度訊 號傳輸至訊號轉換器66,訊號轉換器66將溫度訊號轉換後再傳輸至中央控制單元70,中央控制單元70於接收該溫度訊號後即與預設的測試溫度範圍進行比對運算,並將比對運算後所獲致之溫差值轉換為致冷晶片65所需的電流方向及電流量,再由電源供應器67輸出所需的電流方向及電流量至致冷晶片65,而藉以控制致冷晶片65下方主效應面之加熱或冷卻程度。由於電子元件83初期的溫度低於預設的測試溫度範圍50℃±10℃,因此中央控制單元70將會控制電源供應器67輸出所需的電流方向及電流量至致冷晶片65,而使該致冷晶片65作動,使下方主效應面為放熱端產生加熱面,並傳導至壓接塊622,而透過壓接塊622的傳導對電子元件83進行加熱。當電子元件83加熱至預設的測試溫度範圍50℃±10℃時,該電子元件83即開始執行測試作業,但在執行測試作業的過程中,因電子元件83本身會產生自熱(如120℃)而升溫超出預設的測試溫度範圍50℃±10℃,由於電子元件83中幅度超出預設的測試溫度範圍,因此電源供應器67將改變輸出所需的電流方向及電流量至致冷晶片65,使該致冷晶片65以中功率作動,使下方主效應面為吸熱端產生冷卻面,並傳至壓接塊622,而透過壓接塊622的傳導抑制電子元件83的自熱,使該電子元件83降溫至預設的測試溫度範圍50℃±10℃內。由於該致冷晶片65以中功率作動,使下方主效應面為吸熱端產生冷卻面,相對的,該致冷晶片65位於上方的副效應面則以中功率轉換為放熱端而產生較高溫的加熱面,此時該冷卻器69由中央控制單元70控制下降作動而較接近致冷晶片65上方副效應面的位置(B),該複數個傳導件68即以較短的熱傳導距離或是以較大的熱交換面積與冷卻器69作冷熱交換,而使該致冷晶片65位於上方的副效應面作較大程度的降溫,該致冷晶片65位於上方之副效應面與該位 於下方之主效應面的溫度差即可保持在較佳的範圍值內,進而有效提升致冷晶片之使用壽命。 Please refer to FIG. 7. If the preset test temperature range is 50 ° C ± 10 ° C, the temperature sensor 64 is used as an example. When the crimping block 622 of the crimping unit 60 is crimped to the surface of the electronic component 83, the temperature sensor 64 Will sense the temperature information of the electronic component 83 The signal is transmitted to the signal converter 66. The signal converter 66 converts the temperature signal and then transmits it to the central control unit 70. After receiving the temperature signal, the central control unit 70 performs a comparison operation with a preset test temperature range, and The temperature difference obtained after the comparison operation is converted into the current direction and current amount required for the cooling chip 65, and the required current direction and current amount are output from the power supply 67 to the cooling chip 65, thereby controlling the cooling The degree of heating or cooling of the main effect surface below the wafer 65. Since the initial temperature of the electronic component 83 is lower than the preset test temperature range of 50 ° C ± 10 ° C, the central control unit 70 will control the power supply 67 to output the required current direction and current amount to the cooling chip 65, so that The cooling chip 65 operates to generate a heating surface on the lower main effect surface as a heat release end, and conducts the heating surface to the crimping block 622, and heats the electronic component 83 through the conduction of the crimping block 622. When the electronic component 83 is heated to a preset test temperature range of 50 ° C ± 10 ° C, the electronic component 83 starts to perform a test operation. However, during the execution of the test operation, the electronic component 83 itself generates heat (such as 120). ℃) and the temperature rises beyond the preset test temperature range of 50 ° C ± 10 ° C. Because the amplitude of the electronic component 83 exceeds the preset test temperature range, the power supply 67 will change the direction and amount of current required for output to refrigeration Wafer 65, the refrigerating wafer 65 is operated at a medium power so that the main effect surface below is a heat-absorbing end to generate a cooling surface, and is transmitted to the crimping block 622, and the conduction of the crimping block 622 suppresses the self-heating of the electronic component 83. The electronic component 83 is cooled down to a preset test temperature range of 50 ° C ± 10 ° C. Since the cooling chip 65 is operated with medium power, the main effect surface below is a cooling surface for the heat-absorbing end. In contrast, the secondary effect surface located above the cooling chip 65 is converted to a heat-dissipating end with medium power and generates a higher temperature. The heating surface, at this time, the cooler 69 is controlled by the central control unit 70 to lower and move closer to the position of the secondary effect surface (B) above the refrigerating wafer 65. The plurality of conductive members 68 is a short heat conduction distance or The larger heat exchange area exchanges heat with the cooler 69, so that the side effect surface of the refrigerated wafer 65 located above is cooled down to a greater extent. The temperature difference on the main effect surface below can be kept in a better range, thereby effectively improving the life of the refrigerated wafer.

請參閱第8圖,若以預設的測試溫度範圍-20℃±10℃的低溫測試為例,當壓接單元60之壓接塊622壓接於電子元件83的表面時,感溫器64會將所感測到電子元件83之溫度訊號傳輸至訊號轉換器66,訊號轉換器66將溫度訊號轉換後再傳輸至中央控制單元70,中央控制單元70於接收該溫度訊號後即與預設的測試溫度範圍進行比對運算,並將比對運算後所獲致之溫差值轉換為致冷晶片65所需的電流方向及電流量,再由電源供應器67輸出所需的電流方向及電流量至致冷晶片65,而藉以控制致冷晶片65下方主效應面之加熱或冷卻程度。由於電子元件83初期的溫度高於預設的測試溫度範圍-20℃±10℃,因此中央控制單元70將會控制電源供應器67輸出所需的電流方向及電流量至致冷晶片65,而使該致冷晶片65作動,使下方主效應面為吸熱端產生冷卻面,並傳導至壓接塊622,而透過壓接塊622的傳導對電子元件83進行降溫。當電子元件83降溫至預設的測試溫度範圍-20℃±10℃時,該電子元件83即開始執行測試作業,但在執行測試作業的過程中,因電子元件83本身會產生自熱(如120℃)而升溫超出預設的測試溫度範圍-20℃±10℃,由於電子元件83大幅度超出預設的測試溫度範圍,因此電源供應器67將改變輸出所需的電流方向及電流量至致冷晶片65,使該致冷晶片65以大功率作動,使下方主效應面為吸熱端產生冷卻面,並傳至壓接塊622,而透過壓接塊622的傳導抑制電子元件83的自熱,使該電子元件83降溫至預設的測試溫度範圍-20℃±10℃內。由於該致冷晶片65以大功率作動,使下方主效應面為吸熱端產生冷卻面,相對的,該致冷晶片65位於上方的副效應面則以大功率轉換為放熱端而產 生極高溫的加熱面,此時該冷卻器69由中央控制單元70控制下降作動而極接近致冷晶片65上方副效應面的位置(C),該複數個傳導件68即以極短的熱傳導距離或是以極大的熱交換面積與冷卻器69作冷熱交換,而使該致冷晶片65位於上方的副效應面作極大程度的降溫,該致冷晶片65位於上方之副效應面與該位於下方之主效應面的溫度差即可保持在較佳的範圍值內,進而有效提升致冷晶片之使用壽命。 Please refer to FIG. 8. If a low temperature test with a preset test temperature range of -20 ° C ± 10 ° C is taken as an example, when the crimping block 622 of the crimping unit 60 is crimped to the surface of the electronic component 83, the temperature sensor 64 The temperature signal of the sensed electronic component 83 is transmitted to the signal converter 66. The signal converter 66 converts the temperature signal and then transmits it to the central control unit 70. After receiving the temperature signal, the central control unit 70 communicates with the preset temperature signal. Perform a comparison operation on the test temperature range, and convert the temperature difference obtained after the comparison operation into the current direction and current amount required for the cooling chip 65, and then the power supply 67 outputs the required current direction and current amount to The cooling chip 65 is used to control the degree of heating or cooling of the main effect surface below the cooling chip 65. Since the initial temperature of the electronic component 83 is higher than the preset test temperature range of -20 ° C ± 10 ° C, the central control unit 70 will control the power supply 67 to output the required current direction and current amount to the cooling chip 65, and The cooling chip 65 is actuated to generate a cooling surface on the lower main effect surface as a heat-absorbing end, which is conducted to the crimping block 622, and the electronic component 83 is cooled by the conduction of the crimping block 622. When the electronic component 83 cools down to a preset test temperature range of -20 ° C ± 10 ° C, the electronic component 83 starts to perform the test operation. However, during the execution of the test operation, the electronic component 83 itself generates heat (such as 120 ° C) and the temperature rises beyond the preset test temperature range of -20 ° C ± 10 ° C. Since the electronic component 83 greatly exceeds the preset test temperature range, the power supply 67 will change the direction and amount of current required for output to The cooling chip 65 causes the cooling chip 65 to operate with high power to generate a cooling surface on the lower main effect surface as a heat absorption end, and transmits the cooling surface to the crimping block 622, and suppresses the self-assembly of the electronic component 83 through the conduction of the crimping block 622 The heat reduces the electronic component 83 to a preset test temperature range of -20 ° C ± 10 ° C. Because the cooling chip 65 is operated with high power, the main effect surface below is a cooling surface for the heat-absorbing end. On the contrary, the side effect surface of the cooling chip 65 located at the upper side is converted to a heat-emitting end with high power and produced. The extremely high temperature heating surface is generated. At this time, the cooler 69 is controlled by the central control unit 70 to lower and move close to the position (C) of the side effect surface above the refrigerating wafer 65. The plurality of conductive members 68 conduct heat with extremely short heat. The distance or exchange of heat and cold with the cooler 69 is based on a large heat exchange area, so that the side effect surface of the cooling chip 65 located above is greatly reduced in temperature. The temperature difference of the main effect surface below can be maintained in a better range, thereby effectively improving the life of the refrigerated wafer.

請參閱第9圖,當電子元件83完成測試後,壓接單元60之壓接塊622將會上升脫離壓抵於電子元件83的表面,此時將不再需要考量電子元件83所產生自熱的問題,然而為了在交換料而暫時停止測試時,仍可使致冷晶片65位於上方之副效應面與該位於下方之主效應面的溫度差保持在較佳的範圍值內,即會有二種情況被考慮說明,第一種如原先是在低溫測試的環境情況下,當暫時停止測試時,為了使該壓接塊622仍能保持在低溫的狀態下,該致冷晶片65下方主效應面仍為吸熱端產生冷卻面,該致冷晶片65位於上方的副效應面則仍為放熱端而產生加熱面,此時該冷卻器69仍可由中央控制單元70控制作動,而使該複數個傳導件68與冷卻器69作冷熱交換,使該致冷晶片65位於上方之副效應面與該位於下方之主效應面的溫度差保持在較佳的範圍值內;第二種如原先是在高溫測試的環境情況下,當暫時停止測試時,為了使該壓接塊622仍能保持在高溫的狀態下,該致冷晶片65下方主效應面仍為放熱端產生加熱面,該致冷晶片65位於上方的副效應面則為吸熱端而產生冷卻面,若該致冷晶片65位於上方之副效應面與該位於下方之主效應面的溫度差過大,此時該冷卻器69並無法使致冷晶片65位於上方的副效應面升溫,以縮減與主效應面的溫度差,因此本發明於複數個傳導件68之連結座681上 係可增設有加熱器682,而由該加熱器682對該複數個傳導件68加熱,並使該致冷晶片65位於上方的副效應面升溫,即可使該致冷晶片65位於上方之副效應面與該位於下方之主效應面的溫度差保持在較佳的範圍值內。 Please refer to FIG. 9, after the electronic component 83 completes the test, the crimping block 622 of the crimping unit 60 will rise away from and press against the surface of the electronic component 83. At this time, it is no longer necessary to consider the self-heat generated by the electronic component 83 However, when the test is temporarily stopped in order to exchange materials, the temperature difference between the secondary effect surface of the cooling chip 65 above and the main effect surface below can be kept in a better range, and there will be Two cases are considered and explained. The first one is to test the temperature of the crimping block 622 to keep it at a low temperature when the test is temporarily stopped. The effect surface is still a cooling surface for the heat-absorbing end, and the sub-effect surface for the cooling chip 65 located above is still a heating surface for the heat-release end. At this time, the cooler 69 can still be controlled and operated by the central control unit 70 to make the complex number Each conductive member 68 exchanges heat and cold with the cooler 69, so that the temperature difference between the secondary effect surface of the refrigerated wafer 65 above and the main effect surface below is kept in a better range; the second type is as originally Measured at high temperature In the test environment, when the test is temporarily stopped, in order to keep the crimping block 622 still at a high temperature, the main effect surface under the cooling chip 65 is still a heating surface that generates heat, and the cooling chip 65 The secondary effect surface located above is a heat-absorbing end to generate a cooling surface. If the temperature difference between the secondary effect surface located above the cooling wafer 65 and the primary effect surface located below is too large, the cooler 69 cannot cause the The secondary effect surface located above the cold chip 65 is heated up to reduce the temperature difference from the main effect surface. Therefore, the present invention is applied to the connecting seat 681 of the plurality of conductive members 68. A heater 682 may be added, and the heater 682 heats the plurality of conductive members 68 and heats the side effect surface of the cooling chip 65 located above, so that the side of the cooling chip 65 located above The temperature difference between the effect surface and the main effect surface located below is kept in a better range.

請參閱第10圖,本發明之測試設備係包含有供料單元90、收料單元100、輸送單元110、至少一測試單元80、壓接單元60及中央控制單元(圖式未示),該供料單元90係配置於機台上,用以容納至少一待測之電子元件,於本實施例中,供料單元90係配置有至少一盛裝待測電子元件之料盤91;該收料單元100係配置於機台上,用以容納至少一完測之電子元件,於本實施例中,係設有複數個可盛裝不同等級完測電子元件之料盤101;該測試單元80係設有具測試座82之測試電路板81,以對電子元件執行測試作業,並將測試結果傳輸至中央控制單元,由中央控制單元依據測試結果控制各裝置作動,另為了確保電子元件保持電性連結於測試座82,另於機台上設有壓接電子元件之壓接單元60,使該電子元件保持電性連結測試座82,其中,該壓接單元60係設有如本發明之溫控裝置(如第4圖所示),使該電子元件於預設的測試溫度範圍內執行測試作業;該輸送單元110係配置於機台上,並設有至少一具移料器之移料裝置,用以移載電子元件,於本實施例中,該輸送單元110係包含有第一移料裝置111、載送裝置112及第二移料裝置113,該第一移料裝置111係設有至少一第一移料器1111,用以於供料單元90、收料單元100及載送裝置112間移載待測/完測之電子元件,該載送裝置112係設有至少一載台1121,用以於第一移料裝置111及第二移料裝置113間載送待測/完測之電子元件,該第二移料裝置113係設有至少一第二移料器1131,用以於測試單元8 0及載送裝置112間移載待測/完測之電子元件。 Referring to FIG. 10, the test equipment of the present invention includes a feeding unit 90, a receiving unit 100, a conveying unit 110, at least one testing unit 80, a crimping unit 60, and a central control unit (not shown). The feeding unit 90 is configured on the machine platform to accommodate at least one electronic component to be tested. In this embodiment, the feeding unit 90 is configured with at least one tray 91 for containing the electronic component to be tested. The unit 100 is configured on the machine platform to accommodate at least one completed electronic component. In this embodiment, a plurality of trays 101 capable of containing different grades of completed electronic components are provided; the test unit 80 is provided There is a test circuit board 81 with a test base 82 to perform test operations on electronic components and transmit the test results to a central control unit. The central control unit controls various devices to act according to the test results, and to ensure that the electronic components remain electrically connected At the test base 82, a crimping unit 60 for crimping electronic components is provided on the machine so that the electronic component is electrically connected to the test base 82, wherein the crimping unit 60 is provided with a temperature control device according to the present invention. (As (As shown in Fig. 4), so that the electronic component performs a test operation within a preset test temperature range; the conveying unit 110 is arranged on the machine and is provided with at least one transfer device with a transfer device for transferring In this embodiment, the conveying unit 110 includes a first material conveying device 111, a conveying device 112, and a second material conveying device 113. The first material conveying device 111 is provided with at least one first The transfer device 1111 is used to transfer the electronic components to be tested / completed between the feeding unit 90, the receiving unit 100, and the carrying device 112. The carrying device 112 is provided with at least one carrier 1121 for The electronic components to be tested / completed are carried between the first material transfer device 111 and the second material transfer device 113. The second material transfer device 113 is provided with at least a second material transfer device 1131 for the test unit. 8 The electronic components to be tested / completed are transferred between 0 and the carrying device 112.

綜上說明,本發明壓接單元的溫控裝置,由於可依據預設的測試溫度範圍及電子元件所產生的自熱調整冷卻器的位置,使該致冷晶片之副效應面與該主效應面的溫度差保持在較佳的範圍值內,進而有效提升致冷晶片之使用壽命。據此,本發明實為一深具實用性及進步性之設計,然未見有相同之產品及刊物公開,從而允符發明專利申請要件,爰依法提出申請。 In summary, the temperature control device of the crimping unit of the present invention can adjust the position of the cooler according to the preset test temperature range and the self-heat generated by the electronic components, so that the side effect surface and the main effect of the cooling chip The surface temperature difference is kept in a better range, thereby effectively improving the life of the refrigerated wafer. According to this, the present invention is a practical and progressive design, but the same products and publications have not been disclosed, which allows the invention patent application requirements to be met, and the application is submitted according to law.

60‧‧‧壓接單元 60‧‧‧Crimping unit

61‧‧‧移動臂 61‧‧‧ Mobile arm

62‧‧‧壓接部 62‧‧‧ Crimping Department

621‧‧‧框座 621‧‧‧frame

622‧‧‧壓接塊 622‧‧‧ Crimp Block

64‧‧‧感溫器 64‧‧‧Temperature sensor

65‧‧‧致冷晶片 65‧‧‧Refrigerated chip

66‧‧‧訊號轉換器 66‧‧‧Signal Converter

67‧‧‧電源供應器 67‧‧‧Power Supply

68‧‧‧傳導件 68‧‧‧Conductor

69‧‧‧冷卻器 69‧‧‧cooler

70‧‧‧中央控制單元 70‧‧‧ Central Control Unit

81‧‧‧測試電路板 81‧‧‧test circuit board

82‧‧‧測試座 82‧‧‧Test Block

83‧‧‧電子元件 83‧‧‧Electronic components

Claims (10)

一種電子元件之壓接單元的溫控裝置,該壓接單元係設有一由驅動源驅動之移動臂,於該移動臂頭端裝設有壓接部,該溫控裝置係包括有:中央控制單元;感溫器:係裝設於該壓接部,以感測該電子元件之溫度,並以線路將訊號連結至該中央控制單元;致冷晶片:係裝設於該壓接部,使該致冷晶片位於下方的主效應面導溫至該電子元件;電源供應器:係由該中央控制單元控制該電源供應器輸出至該致冷晶片之電流方向及電流量;至少一傳導件:係連結裝設於該致冷晶片位於上方的副效應面,使該致冷晶片位於上方的副效應面連結導溫於該傳導件;冷卻器:係供該至少一傳導件穿設於內,該冷卻器係由該中央控制單元控制移動,使該冷卻器改變該傳導件的熱傳導距離或是於冷卻器內的熱交換面積,而調整對該致冷晶片位於上方的副效應面的降溫程度。 A temperature control device for a crimping unit of an electronic component. The crimping unit is provided with a moving arm driven by a driving source, and a crimping part is installed at the end of the moving arm. The temperature control device includes: a central control Unit; temperature sensor: installed in the crimping part to sense the temperature of the electronic component and connect the signal to the central control unit with a line; refrigeration chip: installed in the crimping part so that The main effect surface of the cooling chip located below guides the temperature to the electronic component; power supply: the central control unit controls the direction and amount of current output by the power supply to the cooling chip; at least one conductive member: The secondary effect surface provided above the refrigerating chip is connected, so that the secondary effect surface above the refrigerating chip is connected to conduct heat to the conductive member; the cooler is for the at least one conductive member to pass through, The cooler is controlled and moved by the central control unit, so that the cooler changes the heat conduction distance of the conductive member or the heat exchange area in the cooler, and adjusts the degree of cooling of the secondary effect surface located above the cooling chip 依申請專利範圍第1項所述之電子元件之壓接單元的溫控裝置,其中,該致冷晶片係裝設於該壓接部之端面,以直接壓接該電子元件並傳導溫度,該感溫器則伸縮凸伸出該致冷晶片之端面,以感測該電子元件的溫度。 The temperature control device for a crimping unit of an electronic component according to item 1 of the scope of the patent application, wherein the refrigerating chip is mounted on an end surface of the crimping portion to directly crimp the electronic component and conduct temperature, The temperature sensor extends and extends beyond the end surface of the cooling chip to sense the temperature of the electronic component. 依申請專利範圍第1項所述之電子元件之壓接單元的溫控裝置,其中,該壓接部係設有一連接裝設於該移動臂之框座,以及位於該框座下方之壓接塊。 The temperature control device for the crimping unit of the electronic component according to item 1 of the scope of the patent application, wherein the crimping portion is provided with a frame base connected to the moving arm and a crimping unit located below the frame base. Piece. 依申請專利範圍第3項所述之電子元件之壓接單元的溫控裝 置,其中,該致冷晶片係裝設於該壓接部之框座內,並透過該壓接部之壓接塊壓接該電子元件及傳導溫度,該感溫器則伸縮凸伸出該壓接塊之端面,以感測該電子元件的溫度。 Temperature control of the crimping unit of electronic components according to item 3 of the scope of patent application The cooling chip is installed in the frame of the crimping portion, and the electronic component and the conductive temperature are crimped through the crimping block of the crimping portion, and the temperature sensor is extended and protruded. The end surface of the crimping block is pressed to sense the temperature of the electronic component. 依申請專利範圍第1項所述之電子元件之壓接單元的溫控裝置,其中,該溫控裝置之感溫器係以線路將訊號連結至訊號轉換器,該訊號轉換器再連結於該中央控制單元。 The temperature control device for the crimping unit of the electronic component according to item 1 of the scope of the patent application, wherein the temperature sensor of the temperature control device is connected to the signal converter by a line, and the signal converter is further connected to the signal converter. Central control unit. 依申請專利範圍第1項所述之電子元件之壓接單元的溫控裝置,其中,該溫控裝置係設有複數個傳導件,該複數個傳導件係以連結座連結裝設於該致冷晶片位於上方的副效應面,該連結座將該致冷晶片位於上方的副效應面導溫至該複數個傳導件。 The temperature control device of the crimping unit of the electronic component according to item 1 of the scope of the patent application, wherein the temperature control device is provided with a plurality of conductive members, and the plurality of conductive members are connected to the connector with a connection base. The cold chip is located on the secondary effect surface above, and the connection seat guides the cold effect chip on the secondary effect surface to the plurality of conductive members. 依申請專利範圍第1項所述之電子元件之壓接單元的溫控裝置,其中,該該溫控裝置之冷卻器係由升降器驅動升降,該升降器則由中央控制單元控制升降作動,使該冷卻器上升遠離或下降接近於該致冷晶片位於上方的副效應面。 The temperature control device of the crimping unit of the electronic component according to item 1 of the scope of the patent application, wherein the cooler of the temperature control device is driven by a lifter, and the lifter is controlled by the central control unit. Raising the cooler away from or falling close to the side effect surface of the refrigerated wafer above. 依申請專利範圍第1項所述之電子元件之壓接單元的溫控裝置,其中,該溫控裝置之冷卻器係連接於冷源供應器,使該冷卻器保持在低溫狀態。 The temperature control device of the crimping unit of the electronic component according to item 1 of the scope of the patent application, wherein the cooler of the temperature control device is connected to the cold source supplier to keep the cooler at a low temperature state. 依申請專利範圍第1項所述之電子元件之壓接單元的溫控裝置,其中,該傳導件上係設有加熱器,由該加熱器對該傳導件加熱,使該致冷晶片位於上方的副效應面升溫。 The temperature control device for the crimping unit of the electronic component according to item 1 of the scope of the patent application, wherein the conductive member is provided with a heater, and the conductive member is heated by the heater so that the refrigerated wafer is located above The side effect surface is heating up. 一種測試設備,係包含有:供料單元:係配置於機台上,用以容納至少一待測之電子元件;收料單元:係配置於機台上,用以容納至少一完測之電子元件;輸送單元:係配置於機台上,並設有至少一具移料器之移料裝置,用以移載該電子元件; 測試單元:係設有具測試座之測試電路板,該測試座係供承置該電子元件,以對該電子元件執行測試作業;壓接單元:係設於機台上,用以壓接該電子元件,該壓接單元係設有一由驅動源驅動之移動臂,於該移動臂頭端裝設有壓接部,該壓接單元並設有依申請專利範圍第1項所述之溫控裝置,使該電子元件於預設的測試溫度範圍內執行測試作業。 A testing device includes: a feeding unit: arranged on a machine platform to accommodate at least one electronic component to be tested; a receiving unit: arranged on a machine platform to accommodate at least one completed electronic component Component; Conveying unit: It is arranged on the machine and is provided with at least one transfer device with a transfer device for transferring the electronic component; Test unit: It is provided with a test circuit board with a test base for receiving the electronic component to perform a test operation on the electronic component; crimping unit: It is provided on the machine for crimping the electronic component. An electronic component, the crimping unit is provided with a moving arm driven by a driving source, a crimping part is installed at the head end of the moving arm, and the crimping unit is provided with a temperature control according to item 1 of the scope of patent application The device enables the electronic component to perform a test operation within a preset test temperature range.
TW105119955A 2016-06-24 2016-06-24 Temperature control device for press-bonding unit of electronic component and testing device using the same capable of keeping the temperature difference between primary and secondary effect surfaces of a cooling chip within a better range TW201809697A (en)

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