TW201802229A - Fluorescent substance and light-emitting device - Google Patents

Fluorescent substance and light-emitting device Download PDF

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TW201802229A
TW201802229A TW106121209A TW106121209A TW201802229A TW 201802229 A TW201802229 A TW 201802229A TW 106121209 A TW106121209 A TW 106121209A TW 106121209 A TW106121209 A TW 106121209A TW 201802229 A TW201802229 A TW 201802229A
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phosphor
light
sailong
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mass
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TWI802542B (en
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野見山智宏
井之上紗緒梨
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電化股份有限公司
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    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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    • C09K11/7728Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
    • C09K11/77348Silicon Aluminium Nitrides or Silicon Aluminium Oxynitrides
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    • C09K11/08Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/55Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing beryllium, magnesium, alkali metals or alkaline earth metals
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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    • C09K11/64Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing aluminium
    • HELECTRICITY
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    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/501Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502Wavelength conversion materials

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Abstract

Provided is an Li-[alpha]-Sialon fluorescent substance which decreases little in luminance with the lapse of time and has excellent long-term stability. The Li-[alpha]-Sialon fluorescent substance contains stable OH groups bonded to the surface thereof in a proportion by number of 10 or greater per nm2 and contains a luminescence-enhancing element. The luminescence-enhancing element is preferably Eu. It is preferable that the Li content be 1.8-3.0 mass% and the Eu content be 0.1-1.5 mass%.

Description

螢光體及發光裝置 Fluorescent body and light emitting device

本發明係關於Li-α賽龍(Sialon)螢光體、及具有前述螢光體和發光光源的發光元件、及具備前述發光元件的發光裝置。 The present invention relates to a Li-α Sialon phosphor, a light-emitting element including the phosphor and a light-emitting light source, and a light-emitting device including the light-emitting element.

將發光光源的藍色發光二極體(藍色LED)、雷射二極體(LD)發出的光、和吸收發光光源的能量較高、波長較短的光的一部分作為激發光,轉變為波長長的其他顏色的螢光體發出的光加以合成,放出2次性混色光的發光元件,特別是白色發光二極體(白色LED)的特性提升,現在全力進行中。白色LED一般具有將例如成為發光光源的藍色LED用包含螢光體的樹脂等的密封材密封的構造,但通常,前述螢光體是黃色螢光體,或者是紅色螢光體和綠色螢光體的組合,被微分散在密封的樹脂中使用。 A part of light emitted by a blue light emitting diode (blue LED), a laser diode (LD) of a light emitting light source, and light having a relatively high energy and short wavelength that absorbs the light emitting light source is converted into excitation light into The light emitted by phosphors of other colors with long wavelengths is synthesized, and the characteristics of light-emitting elements that emit secondary mixed light, especially white light-emitting diodes (white LEDs) have been improved. The white LED generally has a structure in which, for example, a blue LED that becomes a light emitting light source is sealed with a sealing material such as a resin containing a phosphor, but the phosphor is usually a yellow phosphor, a red phosphor, and a green phosphor. The combination of light bodies is used by being microdispersed in a sealed resin.

作為白色LED所使用的紅色螢光體,可舉出例如α賽龍螢光體。另外,作為其變形,已知有:藉由使作為α賽龍螢光體發光用的活化元素(稱為發光活化元素)進行固溶,從而使整體性不穩定化的螢光體母體結晶,即藉由於α賽龍螢光體結晶內的一部分空隙中進一步包 含Ca2+,從而謀求母體結晶的穩定化之例如一般式:CaxEuySi12-(m+n)Al(m+n)OnN16-n所表示的Ca-α賽龍螢光體(參照專利文獻1)。 Examples of the red phosphor used for the white LED include an α-sialon phosphor. In addition, as a modification thereof, it is known to crystallize a phosphor precursor that is unstable in its entirety by solid-solving an activating element (referred to as a light emitting activating element) that emits light as an α-sialon phosphor, That is, because a part of the voids in the α-Sialon phosphor crystal further contains Ca 2+ , the stabilization of the parent crystal is for example a general formula: Ca x Eu y Si 12- (m + n) Al (m + n ) Ca-α dragon phosphor O n N 16-n indicated (refer to Patent Document 1).

此外近年來,檢討了α賽龍螢光體的亮度進一步提升、螢光光譜的短波長化,結果提出了使用Li+作為供使螢光體母體結晶的構造穩定化用的金屬離子的Li-α賽龍螢光體(參照專利文獻2~4)。 Further in recent years, a review of the phosphor brightness α dragon to further enhance the shorter wavelength fluorescence spectra, the results of the proposed structure as Li- using Li + donor A phosphor precursor crystals stabilized with metal ions Alpha Cylon phosphor (see Patent Documents 2 to 4).

[先前技術文獻] [Prior technical literature] [專利文獻] [Patent Literature]

[專利文獻1]日本特開2002-363554號公報 [Patent Document 1] Japanese Patent Laid-Open No. 2002-363554

[專利文獻2]國際公開第2007/004493號小冊 [Patent Document 2] International Publication No. 2007/004493

[專利文獻3]日本特開2010-202738號公報 [Patent Document 3] Japanese Patent Laid-Open No. 2010-202738

[專利文獻4]國際公開第2010/018873號小冊 [Patent Document 4] International Publication No. 2010/018873

與Ca-α賽龍螢光體相比,前述Li-α賽龍螢光體可達成亮度的改善、短波長化,但使用Li-α賽龍螢光體的發光元件,若長時間使用,則發光元件的亮度會隨著時間經過而陸續降低,產生了於使用Ca-α賽龍螢光體的發光元件上看不到的其他課題,而要求解決該課題。本發明的目的係提供一種Li-α賽龍螢光體,其亮度之隨著時間經過的降低小、長期穩定性優異;提供一種使用前述Li-α賽龍螢光體的發光元件;還有提供具備前述發光元件的發光裝置。 Compared with Ca-α Cylon phosphor, the aforementioned Li-α Cylon phosphor can achieve improved brightness and shorter wavelength. However, if a light-emitting element using Li-α Cylon phosphor is used for a long time, Then, the brightness of the light-emitting element gradually decreases with the lapse of time, and other problems that cannot be seen in light-emitting elements using Ca-α Cylon phosphors arise, and this problem is required to be solved. An object of the present invention is to provide a Li-α Sailong phosphor, which has a small decrease in brightness over time and excellent long-term stability; a light-emitting element using the aforementioned Li-α Sailong phosphor; and A light-emitting device including the light-emitting element is provided.

本發明人等調查並檢討了存在於Li-α賽龍螢光體的表面附近(在本案中有將表面附近和表面統稱為表面的情形)的水分子、鍵結於表面的OH基的性質、存在比例,對使用前述Li-α賽龍螢光體的發光元件的亮度之隨著時間經過的變化所造成的影響,結果發現特別是即使在高溫環境下,也很難從Li-α賽龍螢光體脫離而穩定地鍵結於前述螢光體的表面的OH基(稱為穩定OH基)的存在比例越多,則亮度之隨著時間經過的降低越少,遂而完成本發明。 The present inventors investigated and reviewed the properties of water molecules and OH groups bonded to the surface that exist near the surface of the Li-α Cylon phosphor (in this case, the vicinity of the surface and the surface are collectively referred to as the surface). The existence of a ratio affects the change of the brightness of a light-emitting element using the aforementioned Li-α Sailong phosphor over time. As a result, it is found that it is difficult to obtain a Li-α The more the proportion of OH groups (referred to as stable OH groups) existing on the surface of the phosphor that the dragon phosphor is detached from is stabilized, the less the brightness decreases with the passage of time, and the present invention has been completed .

即,本發明係 That is, the present invention is

(1)一種Li-α賽龍螢光體,其係在螢光體表面,以10個/nm2以上的存在比例鍵結有穩定OH基,且包含發光活化元素。 (1) A Li-α Sailong phosphor, which is on the surface of the phosphor, has a stable OH group bonded to it at a ratio of 10 / nm 2 or more, and contains a light-emitting activating element.

(2)前述Li-α賽龍螢光體中所含的發光活化元素較佳為Eu。 (2) The light-emitting activating element contained in the aforementioned Li-α Sailong phosphor is preferably Eu.

(3)前述Li-α賽龍螢光體的含Li比例較佳為1.8質量%以上3.0質量%以下。 (3) The Li-containing ratio of the Li-α-sialon phosphor is preferably 1.8% by mass or more and 3.0% by mass or less.

(4)前述Li-α賽龍螢光體的含Eu比例較佳為0.1質量%以上1.5質量%以下。 (4) The Eu-containing ratio of the Li-α Sailong phosphor is preferably 0.1% by mass or more and 1.5% by mass or less.

(5)前述Li-α賽龍螢光體的含氧比例較佳為0.4質量%以上1.3質量%以下。 (5) The oxygen-containing ratio of the Li-α Sailong phosphor is preferably 0.4% by mass or more and 1.3% by mass or less.

(6)一種發光元件,其具有前述(1)~(5)中任一項的Li-α賽龍螢光體、及對前述螢光體照射激發光的發光光源。 (6) A light-emitting element comprising the Li-α Sailong phosphor according to any one of (1) to (5) above, and a light-emitting light source that irradiates the phosphor with excitation light.

(7)前述發光元件的發光光源較佳為發光二極體或雷射二極體。 (7) The light-emitting source of the light-emitting element is preferably a light-emitting diode or a laser diode.

(8)一種發光裝置,其具備前述(6)或(7)的發光元件。 (8) A light-emitting device including the light-emitting element according to (6) or (7) above.

藉由本發明的實施,便可得到包含亮度的隨著時間經過的降低小、長期穩定性獲得改善的Li-α賽龍螢光體的發光元件,進而能夠提供使用前述發光元件的發光裝置。 With the implementation of the present invention, a light-emitting element including a Li-α Cylon phosphor with a small decrease in luminance over time and improved long-term stability can be obtained, and a light-emitting device using the light-emitting element can be provided.

[實施發明之形態] [Form of Implementing Invention]

本發明之實施態樣之一者為一種Li-α賽龍螢光體,其在螢光體表面,以10個/nm2以上的存在比例鍵結有穩定OH基,且包含發光活化元素。又,本發明的Li-α賽龍螢光體係一般具有用下式:LixAySi12-(m+n)Alm+nOnN16-n(x+y≦2,m=x+2y)所表示的化合物的螢光體。前述一般式中,Li表示鋰,元素A為發光活化元素,表示例如從Mn、Ce、Pr、Nd、Sm、Eu、Tb、Dy、Er、Tm、Yb所選出的一種或二種以上的元素,Si表示矽,Al表示鋁,O表示氧,N表示氮。前述Li-α賽龍螢光體係α氮化矽結晶的Si-N鍵的一部分被Al-N鍵及Al-O鍵取代,以保持電氣中性的方式,Li和元素A進一步侵入固溶於結晶內的一部分空隙者,前述一般式中的m值、n值分別對應於Al-N 鍵、Al-O鍵的取代率。又,在Li-α賽龍螢光體的情況下,能夠維持整體構造的前述m值的範圍為0.5以上2以下,前述n值的範圍為0以上0.5以下。 One of the embodiments of the present invention is a Li-α Sailong phosphor, which has a stable OH group bonded to the surface of the phosphor at an existing ratio of 10 / nm 2 or more, and contains a light-emitting activating element. In addition, the Li-α Sailong fluorescent system of the present invention generally has the following formula: Li x A y Si 12- (m + n) Al m + n O n N 16-n (x + y ≦ 2, m = x + 2y). In the foregoing general formula, Li represents lithium, and element A is a light-emitting activating element, and represents, for example, one or two or more elements selected from Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Er, Tm, and Yb. , Si means silicon, Al means aluminum, O means oxygen, and N means nitrogen. Part of the Si-N bond of the aforementioned α-silicon crystal of the Li-α Sailong fluorescent system is replaced by Al-N bond and Al-O bond. In order to maintain electrical neutrality, Li and element A further penetrate into solid solution. For a part of voids in the crystal, the values of m and n in the general formula correspond to the substitution ratios of Al-N bonds and Al-O bonds, respectively. In the case of a Li-α Cylon phosphor, the range of the m value that can maintain the overall structure is 0.5 or more and 2 or less, and the range of the n value is 0 or more and 0.5 or less.

包含本發明的Li-α賽龍螢光體在內,通常物體的表面係以水分子、OH基的形式存在或鍵結有物理性、化學性結合力相異的水分。又,本發明中,對於吸附或鍵結於Li-α賽龍螢光體的表面的水分,依以下方式定義。即,在大氣壓下將Li-α賽龍螢光體加熱的情況下,將前述螢光體之於加熱溫度小於200℃下脫離的水分設為「物理吸附水」,將在加熱溫度小於400℃下脫離的水分當中扣除「物理吸附水」後的水分設為「不穩定OH基」,將若未將螢光體加熱至400℃以上便不脫離的水分設為「穩定OH基」。前述穩定OH基係用基於卡耳費雪法的水分分析,在將螢光體樣品的溫度設定為400℃以上時首次從螢光體表面脫離所測定的OH基。又,本發明的Li-α賽龍螢光體,只要滿足與該穩定OH基的存在比例有關的規定的話即可。 Including the Li-α Sailong phosphor of the present invention, the surface of an object usually exists in the form of water molecules or OH groups, or is bonded with water having different physical and chemical binding forces. In the present invention, the moisture that is adsorbed or bonded to the surface of the Li-α Cylon phosphor is defined as follows. That is, when the Li-α Sailong phosphor is heated at atmospheric pressure, the water that is detached from the phosphor at a heating temperature of less than 200 ° C is referred to as "physical adsorbed water", and the heating temperature is less than 400 ° C. The water after desorption of "physical adsorption water" is set to "unstable OH group", and the water that does not detach if the phosphor is not heated above 400 ° C is set to "stable OH group". The aforementioned stable OH group is the OH group measured from the surface of the phosphor for the first time when the temperature of the phosphor sample is set to 400 ° C. or more by moisture analysis based on the Carr Fisher method. The Li-α-sialon phosphor of the present invention is only required to satisfy the regulations regarding the existence ratio of the stable OH group.

此外,本發明中所謂的「以10個/nm2以上的存在比例鍵結有穩定OH基」,係指前述穩定OH基的例如由基於卡耳費雪法的水分分析所得到的計算值為每1nm2的單位面積有10個以上。若穩定OH基的存在比例小於10個/nm2,則發光元件中的螢光體與密封材的緊貼性變得不足,亮度變得容易隨著時間經過而降低。為了解決本發明的課題,穩定OH基的存在比例至少為10個/nm2以上,較佳為25個/nm2以上,更佳為30個/nm2以上,再更佳 為35個/nm2以上。 In addition, in the present invention, “the stable OH group is bonded in an existing ratio of 10 / nm 2 or more” means the aforementioned stable OH group, and the calculated value obtained by, for example, the water analysis by the Carr Fisher method is There are 10 or more units per 1 nm 2 . When the existence ratio of the stable OH group is less than 10 pieces / nm 2 , the adhesion between the phosphor and the sealing material in the light-emitting element becomes insufficient, and the brightness tends to decrease with the passage of time. In order to solve the problems of the present invention, the presence ratio of stable OH groups is at least 10 / nm 2 or more, preferably 25 / nm 2 or more, more preferably 30 / nm 2 or more, and even more preferably 35 / nm 2 or more. 2 or more.

本發明的Li-α賽龍螢光體能夠藉由經過以下步驟來製造:混合各種螢光體原料而製成混合原料的原料混合步驟;將混合原料進行燒成而主要得到Li-α賽龍螢光體的燒成步驟;根據需要實施的將在燒成步驟所得到的燒成體加以解碎或粉碎的解碎步驟;根據需要實施的浸漬於酸性液以除去雜質等的酸處理步驟;根據需要實施的使大小一致的分級步驟;還有在大氣壓下、在前述燒成步驟的溫度以下,進一步將Li-α賽龍螢光體進行再加熱,調整穩定OH基的存在比例的加熱處理步驟。又,本發明的Li-α賽龍螢光體的穩定OH基的存在比例也可以藉由加熱處理步驟來使其增加。 The Li-α Sailong phosphor of the present invention can be manufactured through the following steps: a raw material mixing step of mixing various phosphor raw materials to make a mixed raw material; firing the mixed raw material to mainly obtain Li-α Sailong A step of firing the phosphor; a step of disintegrating or pulverizing the calcined body obtained in the step of firing as required; an step of acid treatment of immersing in an acid solution to remove impurities, etc. as required; A classification step to make the size uniform as needed; and a heat treatment to further reheat the Li-α Cylon phosphor under atmospheric pressure and below the temperature of the firing step to adjust the existence ratio of OH groups. step. Moreover, the presence ratio of the stable OH group of the Li-α Sailong phosphor of the present invention can be increased by a heat treatment step.

本發明的Li-α賽龍螢光體係在該燒成步驟中,若含Li比例相當少,則在將螢光體結晶進行燒成的步驟的結晶粒成長的進行變得非常慢,因此有變得很難得到發光亮度高的大粒子的傾向。此外,若含Li比例過剩,則有在燒成中生成LiSi2N3等的異相(稱為雜質等)的傾向。因此,以燒成步驟剛結束後的包含各種雜質等的Li-α賽龍螢光體中為基準的Li的質量比例,較佳為1.8質量%以上3.0質量%以下,含Li比例能夠藉由螢光體的原料掺合來調整。具體而言,能夠藉由作為含Li原料的氮化鋰、氧化鋰的掺合比的增減來調整。 In the firing step of the Li-α Sailong fluorescent system of the present invention, if the Li content is relatively small, the crystal grain growth in the step of firing the phosphor crystals becomes very slow. It tends to be difficult to obtain large particles with high light emission brightness. In addition, if the Li-containing ratio is excessive, a different phase (referred to as an impurity or the like) of LiSi 2 N 3 or the like tends to be generated during firing. Therefore, the mass ratio of Li based on the Li-α Cylon phosphor containing various impurities and the like immediately after the firing step is preferably 1.8% by mass or more and 3.0% by mass or less. The phosphor material is blended to adjust. Specifically, it can be adjusted by increasing or decreasing the blending ratio of lithium nitride and lithium oxide as the Li-containing raw material.

又,本發明的Li-α賽龍螢光體,可以基於螢光特性的微調整的目的,一邊保持電氣中性一邊利用從包含Mg、Ca、Y及鑭元素(不包括La、Ce、Eu)的群組所 選出的一種以上的取代元素來取代前述一般式的Li的一部分。由此,在本發明的Li-α賽龍螢光體的一實施形態中,利用一種以上的這種取代元素取代一部分的Li。 In addition, the Li-α Sailong phosphor of the present invention can be used for the purpose of fine-tuning the fluorescent characteristics while maintaining electrical neutrality, while including elements including Mg, Ca, Y, and lanthanum (excluding La, Ce, and Eu). ) One or more substituted elements are selected to replace a part of Li in the aforementioned general formula. Therefore, in one embodiment of the Li-α-sialon phosphor of the present invention, one or more of these substitution elements are used to replace a part of Li.

本發明的Li-α賽龍螢光體的一般式:LixAySi12-(m+n)Alm+nOnN16-n(x+y≦2,m=x+2y)中的元素A為負責前述螢光體的發光的元素(稱為發光活化元素)。作為元素A,能夠選擇從Mn、Ce、Pr、Nd、Sm、Eu、Tb、Dy、Er、Tm、Yb所選出的一種或二種以上的元素,它們當中可較佳地使用Eu。 General formula of the Li-α Sailong phosphor of the present invention: Li x A y Si 12- (m + n) Al m + n O n N 16-n (x + y ≦ 2, m = x + 2y) The element A in is an element (referred to as a light-emitting activating element) responsible for light emission of the aforementioned phosphor. As the element A, one or two or more elements selected from Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Er, Tm, and Yb can be selected. Among them, Eu can be preferably used.

發光活化元素的元素A,若相當少,則有對發光的貢獻變少而螢光強度變低的傾向,相反地,若增加一定濃度以上,則有因認為是由元素A彼此間的能量傳遞所帶來的濃度消光的現象,而發光亮度變小的傾向,因此在例如選擇Eu作為元素A的情況下,較佳為0.1質量%以上1.5質量%以下。含Eu比例能夠藉由螢光體的原料掺合來調整。具體而言,能夠藉由含Eu的原料的氧化銪、氮化銪的掺合比的增減來調整。 If element A, which is a light-emitting activating element, is relatively small, the contribution to light emission tends to be small and the fluorescence intensity tends to be low. Conversely, if it is increased above a certain concentration, it is considered that the energy transfer between elements A Due to the phenomenon of extinction caused by the concentration, the luminous brightness tends to be small. Therefore, for example, when Eu is selected as the element A, it is preferably 0.1% by mass or more and 1.5% by mass or less. The Eu-containing ratio can be adjusted by blending the raw materials of the phosphor. Specifically, it can be adjusted by increasing or decreasing the blending ratio of erbium oxide and erbium nitride of a Eu-containing raw material.

本發明的Li-α賽龍螢光體中的含氧比例係與其亮度有關,較佳為0.4質量%以上1.3質量%以下。若螢光體原料中的含氧比例小於0.4質量%而過小,則在燒成步驟中結晶粒的成長少,因此有變得很難得到亮度高的螢光體的傾向,相反地,若含氧比例超過1.3質量%,則螢光光譜寬廣化,因此有變得無法得到充分的亮度的傾向。 The oxygen-containing ratio in the Li-α Sailong phosphor of the present invention is related to its brightness, and is preferably 0.4% by mass or more and 1.3% by mass or less. If the content of oxygen in the phosphor raw material is less than 0.4% by mass and is too small, crystal grains grow less during the firing step, and therefore it becomes difficult to obtain a phosphor with high brightness. If the oxygen ratio exceeds 1.3% by mass, the fluorescence spectrum is broadened, and therefore it is likely that sufficient brightness cannot be obtained.

本發明的Li-α賽龍螢光體,係以其母體結晶 的α賽龍為基底(base),進一步在前述α賽龍中包含Li、Eu等元素的螢光體,但只要是對螢光特性的影響少,便可以包含次要生成的氮化矽、氮化鋁、氮化矽鋰及它們的固溶體等的結晶相。Li-α賽龍螢光體的純度越高越好,較佳為95質量%以上,更佳為97質量%以上,再更佳為98質量%以上。其上限值不需要特意設定,但實質上能夠設為例如99質量%以下。又,Li-α賽龍螢光體的純度能夠使用X射線繞射裝置(例如Rigaku股份公司製的Ultima IV),由利用使用CuKα線的粉末X射線繞射(也稱為XRD)所鑑定的結晶相的比例求出。 The Li-α Sailong phosphor of the present invention is based on its parent crystal The α-Sialon is a base, and the foregoing α-Sialon further includes phosphors such as Li and Eu. However, as long as it has little effect on the fluorescence characteristics, it can include secondary silicon nitride, Crystal phases such as aluminum nitride, lithium silicon nitride, and their solid solutions. The higher the purity of the Li-α Sailong phosphor, the better, it is preferably 95% by mass or more, more preferably 97% by mass or more, and still more preferably 98% by mass or more. The upper limit value does not need to be specifically set, but can be substantially set to, for example, 99% by mass or less. In addition, the purity of the Li-α Sailong phosphor can be determined by using an X-ray diffraction device (for example, Ultima IV manufactured by Rigaku Co., Ltd.) using powder X-ray diffraction (also called XRD) using CuKα rays. The ratio of the crystalline phase was determined.

成為本發明的Li-α賽龍螢光體的原料的化合物係包含Si源、Al源、Eu源、Li源的化合物。具體而言,可舉出:氮化矽粉末、氮化鋁粉末、氧化銪粉末、氮化鋰粉末。各原料較佳為預先以粉末狀態準備。 The compound that is a raw material of the Li-α-sialon phosphor of the present invention is a compound containing a Si source, an Al source, an Eu source, and a Li source. Specific examples include silicon nitride powder, aluminum nitride powder, hafnium oxide powder, and lithium nitride powder. Each raw material is preferably prepared in a powder state in advance.

原料混合步驟,首先以所要的比例,混合例如氮化矽粉末、氮化鋁粉末、氧化銪粉末等之除了氮化鋰粉末以外的螢光體的原料。混合,若考慮工業生產性,則較佳為利用濕式混合進行。作為濕式混合中使用的溶媒,能使用例如乙醇。進行濕式混合之後,經過溶媒除去、乾燥及解碎,得到預混合粉末。進一步以所要的比例混合此預混合粉末與氮化鋰粉末,從而得到原料混合粉末。前述預混合粉末和氮化鋰粉末的混合,為了避免水解,較佳為在氮等的惰性氣體環境下實施。 In the raw material mixing step, first, raw materials of phosphors other than lithium nitride powder such as silicon nitride powder, aluminum nitride powder, hafnium oxide powder, etc. are mixed at a desired ratio. In consideration of industrial productivity, mixing is preferably performed by wet mixing. As a solvent used in the wet mixing, for example, ethanol can be used. After wet mixing, the solvent is removed, dried, and pulverized to obtain a pre-mixed powder. This premixed powder and lithium nitride powder are further mixed in a desired ratio to obtain a raw material mixed powder. In order to avoid hydrolysis, the premixed powder and the lithium nitride powder are preferably mixed in an inert gas environment such as nitrogen.

藉由燒成前述的原料混合粉末,可以得到例如經Eu活化的Li-α賽龍螢光體。作為用於燒成的坩堝, 較佳為在高溫的氣體環境下用物理性化學性穩定的材質構成,較佳為氮化硼製、碳製、鉬、鉭等的高熔點金屬製等。作為燒成氣體環境,沒有特別的限制,通常是在惰性氣體環境或還原性氣體環境下進行。惰性氣體或還原性氣體可以只使用一種,也可以以任意的組合比率併用二種以上的氣體。作為惰性氣體或還原性氣體,可舉出:氫、氮、氬、氨等,可較佳地使用氮。燒成氣體環境的壓力係根據燒成溫度加以選擇。氣體環境壓力越高,螢光體的分解溫度越高,若考慮工業生產性,則較佳為在錶壓0.02~1.0MPa左右的加壓下進行。燒成溫度,若比1650℃低,則母體結晶的結晶缺陷、未反應殘留量變多,若超過1900℃,則母體結晶分解,因而不佳。因此,燒成溫度較佳為設為1650~1900℃。若燒成時間短,則母體結晶的結晶缺陷、未反應殘留量變多,若燒成時間變長,則考慮工業生產性是不佳的。因此,較佳為設為2~24小時。在燒成步驟所得到的Li-α賽龍螢光體可以根據後續操作的需要,解碎、分級成所要的粒度。 By firing the aforementioned raw material mixed powder, for example, a Li-α-sialon phosphor activated by Eu can be obtained. As a crucible for firing, It is preferably made of a material that is physically and chemically stable in a high-temperature gas environment, and is preferably made of a high-melting-point metal such as boron nitride, carbon, molybdenum, or tantalum. The firing gas environment is not particularly limited, and it is usually carried out in an inert gas environment or a reducing gas environment. Only one kind of inert gas or reducing gas may be used, or two or more kinds of gases may be used in combination at any combination ratio. Examples of the inert gas or the reducing gas include hydrogen, nitrogen, argon, and ammonia, and nitrogen is preferably used. The pressure of the firing gas environment is selected based on the firing temperature. The higher the ambient gas pressure, the higher the decomposition temperature of the phosphor. In consideration of industrial productivity, it is preferably performed under a pressure of about 0.02 to 1.0 MPa. If the firing temperature is lower than 1650 ° C, the crystal defects and unreacted residual amount of the parent crystal will increase. If it exceeds 1900 ° C, the parent crystal will be decomposed, which is not preferable. Therefore, the firing temperature is preferably 1650 to 1900 ° C. If the firing time is short, the crystal defects and unreacted residual amount of the parent crystal will increase, and if the firing time becomes longer, it is not good to consider industrial productivity. Therefore, it is preferably set to 2 to 24 hours. The Li-α Sailong phosphor obtained in the firing step can be disintegrated and classified into a desired particle size according to the needs of subsequent operations.

剛在燒成步驟所得到的Li-α賽龍螢光體,一般也有前述螢光體的結晶比例不夠高的情況,在維持那樣的情況下很難展現所要的螢光特性,因此能夠用例如氫氟酸及硝酸的混合液等進行酸處理,提高Li-α賽龍螢光體的結晶比例。 Generally, the Li-α Sailong phosphor obtained immediately after the firing step may not have a sufficiently high crystal ratio, and it is difficult to exhibit the desired fluorescent characteristics under such conditions. The mixed solution of hydrofluoric acid and nitric acid is subjected to acid treatment to increase the crystallization ratio of Li-α Sailong phosphor.

本發明的Li-α賽龍螢光體通常是微分散於發光元件的密封樹脂中使用,因此以微粒子狀的形式使用,本發明的Li-α賽龍螢光體的粒徑,若過小,則有螢光 強度變低的傾向,若過大,則有用包含螢光體的樹脂等進行密封的LED的發光色的色度產生變異、或產生發光色的顏色不均的傾向,因此本發明的Li-α賽龍螢光體之以基於雷射繞射-散射法的體積基準的中位徑(D50)所表示的平均一次粒徑較佳為7μm以上35μm以下。由此,為了得到不會在高亮度下引起顏色不均的螢光體,較佳為在將已適度地解碎的本發明的Li-α賽龍螢光體進行酸處理後,進一步設置分級步驟,移除微粉。分級步驟可以採用濕式及乾式中的任一方式,例如,較佳為將酸處理後的Li-α賽龍螢光體分散於離子交換水和為分散劑的六偏磷酸鈉的混合溶媒中、或離子交換水和氨水的混合鹼性溶媒中,利用由粒徑的差異所產生的靜置後的沉降速度的差的淘析分級,或使用篩網的乾式分級。 The Li-α Sailong phosphor of the present invention is usually used in a micro-dispersed sealing resin of a light-emitting element, so it is used in the form of fine particles. If the particle size of the Li-α Sailong phosphor of the present invention is too small, Fluorescent The intensity tends to be low. If it is too large, the chromaticity of the luminous color of the LED sealed with a resin or the like containing a phosphor may be changed, or the luminous color may be uneven. Therefore, the Li-α The average primary particle diameter of the dragon fluorescent body represented by the volume-based median diameter (D50) based on the laser diffraction-scattering method is preferably 7 μm or more and 35 μm or less. Therefore, in order to obtain a phosphor that does not cause color unevenness at high brightness, it is preferable to further classify the Li-α Sailong phosphor of the present invention that has been appropriately defragmented after acid treatment. Step to remove fine powder. The classification step can be either wet or dry. For example, it is preferable to disperse the acid-treated Li-α Sailong phosphor in a mixed solvent of ion-exchanged water and sodium hexametaphosphate as a dispersant. Or, in a mixed alkaline solvent of ion-exchanged water and ammonia water, elutriation classification using a difference in sedimentation speed after standing caused by a difference in particle size, or dry classification using a screen.

藉由經過酸處理步驟及分級步驟,一般可提高有效的Li-α賽龍螢光體的結晶比例,因此能得到發光效率高的螢光體,若在那樣的狀況下在發光元件及發光裝置中長時間使用,則發光元件的亮度隨著時間經過而降低。因此,本發明,發現了以下新知識:存在或鍵結於Li-α賽龍螢光體的表面的水分子、OH基的存在比例會對包含前述螢光體的發光元件的亮度的隨著時間經過的變化造成影響;或者可調節鍵結於前述Li-α賽龍螢光體的表面的OH基當中穩定地鍵結的OH基(穩定OH基)的存在比例,從而完成不易引起亮度隨著時間經過而降低之Li-α賽龍螢光體的發明。又,為了得到能夠提供亮度的隨著時間經過的降低小,長期穩定性優異的發光元件的 Li-α賽龍螢光體,將即使在高溫環境下也很難從Li-α賽龍螢光體脫離的穩定OH基的存在比例設為10個/nm2以上即可。為了調節穩定OH基的存在比例,具體而言,較佳為將Li-α賽龍螢光體進行加熱處理。進行加熱處理的情況的氣體環境沒有特別的限定,較佳為大氣、氮、氫的氣體環境,特佳為大氣環境。又,為了使僅有在400℃以上首次脫離的穩定OH基留在表面,進行加熱處理的情況的加熱處理溫度係至少,較佳為1000℃以下,更佳為700℃以下,再更佳為500℃以下。此外,加熱處理溫度的下限較佳為100℃以上,更佳為200℃以上,再更佳為400℃以上。若加熱處理溫度為1000℃以上,則Li-α賽龍螢光體本身產生特性劣化,因而亮度降低。另一方面,若為100℃以上,便能夠藉由調整保持時間來調節穩定OH基的存在比例。將Li-α賽龍螢光體進行加熱處理的時間係依加熱溫度而定,較佳為3小時以上,若考慮量產效率面,則較佳為小於20小時。但是,本發明,若將穩定地鍵結於Li-α賽龍螢光體表面的穩定OH基的存在比例設為10個/nm2以上的話即可,關於加熱溫度及保持時間,沒有特別的限定。 After undergoing the acid treatment step and the classification step, the effective crystalline ratio of the Li-α Sailong phosphor can generally be increased. Therefore, a phosphor with high luminous efficiency can be obtained. Under such conditions, the light emitting element and the light emitting device can be obtained. When used for a long period of time, the brightness of the light-emitting element decreases with time. Therefore, according to the present invention, the following new knowledge was discovered: the proportion of the presence of water molecules or OH groups on or on the surface of the Li-α Sailong phosphor is dependent on the brightness of the light-emitting element containing the phosphor. The change over time affects the effect; or the proportion of the OH groups (stable OH groups) stably bonded among the OH groups bonded to the surface of the aforementioned Li-α Sailong phosphor can be adjusted, so that it is difficult to cause the brightness The invention of the Li-α Sailong phosphor that decreases over time. In addition, in order to obtain a Li-α-Sialon phosphor which can provide a light-emitting element with a small decrease in luminance over time and excellent long-term stability, it is difficult to emit light from the Li-α-Sialon phosphor even in a high-temperature environment. It is sufficient that the ratio of the presence of the stable OH groups to be detached is 10 or more per nm 2 . In order to adjust the existence ratio of the stable OH group, specifically, it is preferable to heat-treat the Li-α Sailong phosphor. The gas environment in the case of performing a heat treatment is not particularly limited, but preferably a gas environment of the atmosphere, nitrogen, and hydrogen, and an atmospheric environment is particularly preferred. In addition, in order to leave only stable OH groups that have been detached for the first time above 400 ° C on the surface, the heat treatment temperature in the case of heat treatment is at least, preferably 1,000 ° C or lower, more preferably 700 ° C or lower, and even more preferably Below 500 ° C. The lower limit of the heat treatment temperature is preferably 100 ° C or higher, more preferably 200 ° C or higher, and even more preferably 400 ° C or higher. When the heat treatment temperature is 1000 ° C. or higher, the characteristics of the Li-α Cylon phosphor itself are deteriorated, and thus the brightness is decreased. On the other hand, if it is 100 ° C or higher, the existence ratio of the stable OH group can be adjusted by adjusting the holding time. The time for heating the Li-α Sailong phosphor depends on the heating temperature, preferably 3 hours or more, and considering mass production efficiency, it is preferably less than 20 hours. However, in the present invention, if the existence ratio of the stable OH groups that are stably bonded to the surface of the Li-α Cylon phosphor is 10 or more per nm 2 , there is no particular limitation on the heating temperature and the holding time. limited.

本發明之第二實施態樣係具有本發明的第一實施態樣的Li-α賽龍螢光體和發光光源的發光元件。前述發光光源較佳為發光波峰波長為240nm以上480nm以下的單色光的LED或LD。其原因是光源的波峰波長為240nm以上480nm以下的單色光為最常被使用的藍色LED的波峰波長區,此外Li-α賽龍螢光體可效率佳地由前 述範圍的波長的光所激發而以高亮度發光。 A second embodiment of the present invention is a light-emitting element including the Li-α Sailong phosphor of the first embodiment of the present invention and a light source. The light-emitting light source is preferably an LED or an LD that emits monochromatic light having a peak wavelength of 240 nm to 480 nm. The reason is that the monochromatic light with a peak wavelength of 240nm to 480nm is the peak wavelength region of the most commonly used blue LEDs. In addition, Li-α Cylon phosphors can be efficiently used from the front. Light having a wavelength in the above range is excited to emit light with high brightness.

本發明的具備Li-α賽龍螢光體和發光光源的發光元件,例如能依以下的方式操作來製造。首先,將本發明的螢光體與密封材混合,調整漿料。例如,能夠以相對於密封材100質量份為30~50質量份的比例混合來調整漿料。作為密封材,可舉出例如:熱塑性樹脂、熱硬化性樹脂、光硬化性樹脂等。具體而言,例如,可舉出:聚甲基丙烯酸甲酯等的甲基丙烯酸樹脂;聚苯乙烯、苯乙烯-丙烯腈共聚物等的苯乙烯樹脂;聚碳酸酯樹脂;聚酯樹脂;苯氧基樹脂;丁醛樹脂;聚乙烯醇;乙基纖維素、纖維素乙酸酯、纖維素乙酸酯丁酸酯等的纖維素系樹脂;環氧樹脂;酚樹脂;矽酮樹脂等。此外,也能使用無機系材料,例如,將金屬醇化物、陶瓷前驅物聚合物或者是利用溶膠-凝膠法將含有金屬醇化物的溶液進行水解聚合而成的溶液或固化它們的組合的無機系材料,例如具有矽氧烷鍵的無機系材料。此外,若為不與LED晶片直接接觸而可外附的密封部(例如,外部帽蓋、圓頂狀的密封部等)的話,則也能使用熔融法玻璃。又,密封材可以使用一種,也可以用任意的組合及比率併用二種以上。 The light-emitting element including the Li-α Cylon phosphor and the light-emitting light source of the present invention can be manufactured by, for example, operating in the following manner. First, the phosphor of the present invention is mixed with a sealing material to adjust the slurry. For example, the slurry can be adjusted by mixing at a ratio of 30 to 50 parts by mass with respect to 100 parts by mass of the sealing material. Examples of the sealing material include a thermoplastic resin, a thermosetting resin, and a photocurable resin. Specific examples include methacrylic resins such as polymethyl methacrylate; styrene resins such as polystyrene and styrene-acrylonitrile copolymers; polycarbonate resins; polyester resins; benzene Oxygen resin; Butyraldehyde resin; Polyvinyl alcohol; Cellulose resins such as ethyl cellulose, cellulose acetate, cellulose acetate butyrate; epoxy resin; phenol resin; silicone resin, etc. In addition, inorganic materials such as a solution obtained by hydrolyzing and polymerizing a metal alcoholate, a ceramic precursor polymer, or a solution containing a metal alcoholate by a sol-gel method, or a combination of inorganic materials that cure these can be used. The material is, for example, an inorganic material having a siloxane bond. Moreover, if it is a sealing part (for example, an external cap, a dome-shaped sealing part, etc.) which can be externally attached without making direct contact with an LED chip, a fused glass can also be used. Further, one type of sealing material may be used, or two or more types may be used in any combination and ratio.

密封材當中,根據分散性、成形性的理由,較佳為使用具有熱硬化性且在常溫下具有流動性的樹脂。作為具有熱硬化性且在常溫下具有流動性的樹脂,可使用例如矽酮樹脂。例如,能舉出Toray-Dow Corning股份公司製的商品名:JCR6175、OE6631、OE6635、OE6636 、OE6650等。 Among the sealing materials, for reasons of dispersibility and moldability, it is preferable to use a resin having thermosetting properties and fluidity at normal temperature. As the resin having thermosetting property and fluidity at ordinary temperature, for example, a silicone resin can be used. For example, Toray-Dow Corning Co., Ltd.'s product name: JCR6175, OE6631, OE6635, OE6636 , OE6650 and so on.

接著,向安裝了在例如460nm處具有發光波峰波長的藍色LED晶片的頂視型封裝(top view type package)注入上述漿料3~4μL。在140~160℃的範圍的溫度下、在2~2.5小時的範圍內加熱此注入了漿料的頂視型封裝,使漿料硬化。依此方式操作,能夠製造吸收波長420~480nm的範圍的光,且放出超過480nm且800nm以下的波長的光的發光元件。 Next, 3 to 4 μL of the above slurry is injected into a top view type package in which a blue LED chip having a light emission peak wavelength at 460 nm is mounted. The paste-injected top-view package is heated at a temperature in the range of 140 to 160 ° C for 2 to 2.5 hours to harden the paste. By operating in this manner, a light-emitting element capable of absorbing light in a wavelength range of 420 to 480 nm and emitting light in a wavelength exceeding 480 nm to 800 nm can be manufactured.

為本發明之第二實施態樣的包含為本發明的第一實施態樣的Li-α賽龍螢光體的發光元件之評價使用時的長期穩定性的情況,係例如,能夠實際製作組合了藍色發光二極體和螢光體的發光元件樣品,對前述發光元件樣品,一邊放置在高溫高濕的環境下一邊實施通電試驗,利用由通電試驗剛開始後及經過既定時間後的各全光束測定值求出的光束保持率(%)來進行評價。由於以通電試驗剛開始後的光束值為基準,因此理想的是既定時間後的光束保持率接近100%。 This is a case of evaluating the long-term stability of the light-emitting element including the Li-α Sailong phosphor according to the second embodiment of the present invention during use. For example, a combination can be actually produced. The light-emitting element samples of blue light-emitting diodes and phosphors were used. The light-emitting element samples were subjected to a power-on test while being placed in a high-temperature and high-humidity environment. The beam retention ratio (%) obtained from the total beam measurement value was evaluated. Since the beam value immediately after the start of the energization test is used as a reference, it is desirable that the beam retention rate after a predetermined time is close to 100%.

本發明之第三實施態樣係具備前述之發光元件的發光裝置。作為本發明中所稱的發光裝置的更具體例,可舉出:紅綠燈、顯示器裝置等的顯示資訊的裝置,還有汽車等的車輛用頭燈、代替白熾燈、螢光燈等的照明裝置。 A third embodiment of the present invention is a light emitting device including the aforementioned light emitting element. More specific examples of the light-emitting device referred to in the present invention include a device for displaying information such as a traffic light and a display device, a headlight for a vehicle such as a car, and a lighting device instead of an incandescent lamp or a fluorescent lamp. .

[實施例] [Example]

將本發明的實施例與比較例進行比較,同時使用表進行說明。 Examples of the present invention are compared with comparative examples, and a table is used for explanation.

<實施例1> <Example 1>

針對實施例1的螢光體的製造方法進行說明。螢光體係藉由經過原料的混合步驟、燒成步驟來製造。 A method for manufacturing the phosphor of Example 1 will be described. The fluorescent system is produced by a mixing step and a firing step of the raw materials.

(原料混合步驟) (Raw material mixing step)

實施例1的螢光體的原料為Si3N4(宇部興產公司製的E10等級)、AlN(Tokuyama公司製的F等級)、Eu2O3(信越化學工業公司製的RU等級)、Li3N粉末(Materion公司製的純度99.5質量%,-60網目)。首先,以成為Si3N4:AlN:Eu2O3=84.5:14.8:0.64的莫耳比的方式秤重、混合而得到預混合粉末。 The raw materials of the phosphor in Example 1 are Si 3 N 4 (E10 grade manufactured by Ube Kosan Co., Ltd.), AlN (F grade manufactured by Tokuyama Corporation), Eu 2 O 3 (RU grade manufactured by Shin-Etsu Chemical Industry Co., Ltd.), Li 3 N powder (99.5% by mass, -60 mesh, manufactured by Materion). First, the powder was weighed and mixed to obtain a molar ratio of Si 3 N 4 : AlN: Eu 2 O 3 = 84.5: 14.8: 0.64 to obtain a pre-mixed powder.

在氮氣環境下,以成為預混合粉末的莫耳數(Si3N4、AlN、及Eu2O3的合計莫耳數):Li3N的莫耳數=94.1:5.9的比的方式,將前述預混合粉末和前述Li3N粉末混合而得到原料混合粉末。 Under a nitrogen environment, the molar number of the premixed powder (the total molar number of Si 3 N 4 , AlN, and Eu 2 O 3 ): the molar number of Li 3 N = 94.1: 5.9, The premixed powder and the Li 3 N powder are mixed to obtain a raw material mixed powder.

(燒成步驟) (Baking step)

在手套箱內,將前述原料混合粉末填充至氮化硼質的坩堝,用碳加熱器的電氣爐,在錶壓0.8MPa的加壓氮氣環境中,在1800℃下進行8小時燒成,得到Eu活化Li-α賽龍螢光體。 In the glove box, the foregoing raw material mixed powder was filled into a boron nitride crucible, and an electric furnace using a carbon heater was fired at 1800 ° C for 8 hours in a pressure nitrogen atmosphere with a gauge pressure of 0.8 MPa to obtain Eu activates Li-α Sailong phosphor.

(粉碎步驟) (Pulverization step)

又,燒成後的前述Eu活化Li-α賽龍螢光體係粒子形狀大且為塊狀,因此利用基於輥磨機及噴射磨機的乾式粉碎機進行粉碎,篩選出使其壓抵在孔眼開度45μm篩網而通過者。 In addition, since the particles of the Eu-activated Li-α Sailong fluorescent system after firing are large and massive, they are pulverized by a dry mill using a roll mill and a jet mill, and are screened to be pressed against the perforations. Those who pass through a 45 μm sieve.

(酸處理步驟) (Acid treatment step)

對前述分級後的Eu活化Li-α賽龍螢光體,對於螢光體100g,藉由浸漬於至少300mL以上的氫氟酸及硝酸的混合液(80℃)中來進行酸處理。 For the Eu-activated Li-α-sialon phosphor after the classification, 100 g of the phosphor is immersed in a mixed solution (80 ° C.) of hydrofluoric acid and nitric acid of at least 300 mL to perform acid treatment.

(分級步驟) (Classification step)

將酸處理步驟後的Li-α賽龍螢光體200g靜置在離子交換水和分散劑的六偏磷酸鈉的至少2L以上的足夠量的混合溶媒中10分鐘,從而移除5μm以下的微粉。 200 g of Li-α Cylon phosphor after the acid treatment step was allowed to stand in a sufficient amount of a mixed solvent of at least 2 L or more of ion exchanged water and dispersant sodium hexametaphosphate for 10 minutes, thereby removing fine powder of 5 μm or less .

(加熱處理步驟) (Heat treatment step)

將分級步驟後的Li-α賽龍螢光體填充至磁性坩堝,用電氣爐,在大氣環境中200℃下進行3小時的加熱處理,得到實施例1所示的本發明的Eu活化Li-α賽龍。 The magnetic crucible was filled with the Li-α Sailong phosphor after the classification step, and then heated in an electric furnace at 200 ° C. for 3 hours in an atmospheric environment to obtain the Eu-activated Li- Alpha Cylon.

<實施例2> <Example 2>

實施例2的Eu活化Li-α賽龍,係除了將加熱處理步驟的條件設為在大氣中500℃下3小時的退火外,藉由實施與實施例1同樣的製造方法來得到。 The Eu-activated Li-α-sialon of Example 2 was obtained by performing the same manufacturing method as that of Example 1 except that the conditions of the heat treatment step were annealing at 500 ° C. for 3 hours in the atmosphere.

<實施例3> <Example 3>

實施例3的Eu活化Li-α賽龍,係除了將加熱處理步驟的條件設為在大氣中700℃下3小時的退火外,藉由實施與實施例1同樣的製造方法來得到。 The Eu-activated Li-α-sialon of Example 3 was obtained by performing the same manufacturing method as that of Example 1 except that the conditions of the heat treatment step were annealing at 700 ° C. for 3 hours in the atmosphere.

<實施例4> <Example 4>

實施例4的Eu活化Li-α賽龍,係除了將大氣加熱步驟的條件設為在大氣中1100℃下3小時的退火外,藉由實施與實施例1同樣的製造方法來得到。 The Eu-activated Li-α-sialon of Example 4 was obtained by performing the same manufacturing method as that of Example 1 except that the conditions of the atmospheric heating step were annealing at 1100 ° C. for 3 hours in the atmosphere.

<比較例1> <Comparative example 1>

比較例1的Eu活化Li-α賽龍,係除了在實施例1的製 造步驟中,省略酸處理步驟和分級步驟、加熱處理步驟外,藉由與實施例1同樣的製造方法得到。 The Eu-activated Li-α-sialon of Comparative Example 1 is the same as the one prepared in Example 1. The manufacturing step was obtained by the same manufacturing method as in Example 1 except that the acid treatment step, the classification step, and the heat treatment step were omitted.

<比較例2> <Comparative example 2>

比較例2的Eu活化Li-α賽龍,係除了在實施例1的製造步驟中,省略加熱處理步驟外,藉由與實施例1同樣的製造方法得到。 The Eu-activated Li-α-sialon of Comparative Example 2 was obtained by the same manufacturing method as in Example 1 except that the heat treatment step was omitted in the manufacturing steps of Example 1.

(發光元件製造步驟) (Light-emitting element manufacturing steps)

以相對於矽酮樹脂(Toray-Dow Corning股份公司製,商品名:JCR6175等)100質量份為30質量份的比例,混合實施例1~4及比較例1、2的各螢光體,調整漿料。之後,向安裝了在460nm處具有波峰波長的藍色LED晶片的頂視型封裝注入上述漿料3~4μL。在150℃下、在2小時的範圍內加熱此注入了漿料的頂視型封裝,使漿料硬化,製造成為樣品的額定150mA的發光元件。 The phosphors of Examples 1 to 4 and Comparative Examples 1 and 2 were mixed at a ratio of 30 parts by mass to 100 parts by mass of silicone resin (manufactured by Toray-Dow Corning Co., Ltd., trade name: JCR6175, etc.), and adjusted. Slurry. After that, 3 to 4 μL of the above slurry was injected into a top-view type package in which a blue LED wafer having a peak wavelength at 460 nm was mounted. The paste-injected top-view package was heated at 150 ° C for 2 hours, and the paste was cured to produce a light-emitting element rated at 150 mA as a sample.

將實施例1~4及比較例1、2(將以上統稱為實施例等)的各螢光體的簡單的比較、和評價結果加以整理並顯示在表1。表1係針對實施例等,顯示有無實施酸處理步驟、分級步驟、加熱處理步驟的溫度、穩定OH基的存在比例(單位:個/nm2)、波峰波長(單位:nm)、中位徑(單位:μm)、α賽龍結晶對全部結晶相的比例(單位:%)、螢光強度(單位:%)、LED的光束保持率(單位:%)者。 The simple comparison and evaluation results of the phosphors of Examples 1 to 4 and Comparative Examples 1 and 2 (collectively referred to as examples above) and the evaluation results are shown in Table 1. Table 1 shows the temperature of the acid treatment step, the classification step, the heat treatment step, the presence ratio of stable OH groups (unit: unit / nm 2 ), the peak wavelength (unit: nm), and the median diameter. (Unit: μm), the ratio of the α-Sialon crystal to the total crystalline phase (unit:%), the fluorescence intensity (unit:%), and the beam retention rate of the LED (unit:%).

(主結晶相的鑑定) (Identification of the main crystalline phase)

針對實施例等的各螢光體,使用X射線繞射裝置(Rigaku股份公司製的Ultima IV),利用使用CuKα射線的粉末X射線繞射(XRD)來鑑定結晶相。在實施例1~4、比 較例1、2所得到的螢光體的X射線繞射圖案係確認為與Li-α賽龍結晶相同的繞射圖案,確認了主結晶相為Li-α賽龍。 For each of the phosphors in Examples and the like, an X-ray diffraction device (Ultima IV manufactured by Rigaku Co., Ltd.) was used, and the crystal phase was identified by powder X-ray diffraction (XRD) using CuKα rays. In Examples 1 to 4, The X-ray diffraction pattern of the phosphor obtained in Comparative Examples 1 and 2 was confirmed to be the same diffraction pattern as that of the Li-α-sialon crystal, and it was confirmed that the main crystal phase was Li-α-sialon.

(OH基數測定) (Measurement of OH group)

本發明中的穩定OH基的定量係使用卡耳費雪法進行。卡耳費雪測定係使用三菱化學公司製的水分氣化裝置VA-122和三菱化學公司製的水分測定裝置CA-100,水分測定裝置的陽極液使用Aquamicron AX(三菱化學公司製),陰極液使用Aquamicron CXU(三菱化學公司製)。在進行卡耳費雪測定之際將背景值固定為0.10(μg/sec),在所檢測的水分低於背景值之前持續進行測定。測定係在550℃下實施。加熱處理時係以不使螢光體樣品暴露於外部空氣的方式操作,使從水分氣化裝置產生的水分偕同高純度氬300ml/min導入卡耳費雪裝置,測定水分量。將導入水分氣化裝置的樣品設為4g來進行。 The quantification of the stable OH group in the present invention was performed using the Carr Fisher method. The Carr Fisher measurement uses a moisture vaporization device VA-122 made by Mitsubishi Chemical Corporation and a moisture measurement device CA-100 made by Mitsubishi Chemical Corporation. The anolyte of the water measurement apparatus uses Aquamicron AX (manufactured by Mitsubishi Chemical Corporation) and the catholyte Aquamicron CXU (manufactured by Mitsubishi Chemical Corporation) was used. When Carr Fisher measurement was performed, the background value was fixed at 0.10 (μg / sec), and the measurement was continued until the detected moisture was lower than the background value. The measurement was performed at 550 ° C. During the heat treatment, the phosphor sample was operated so as not to be exposed to the outside air, and the water generated from the water vaporization device was introduced into the Carr Fisher device with 300 ml / min of high-purity argon to measure the water content. A sample introduced into the moisture gasification device was set to 4 g.

<水分量換算為OH基數> <Moisture converted to OH base number>

考量在卡耳費雪測定中所檢測的水分是2個OH基縮合而成為1個水分子,因此每單位面積的OH基的數目係由下列公式算出。 Considering that the moisture detected in the Carr Fisher measurement is that two OH groups are condensed to become one water molecule, the number of OH groups per unit area is calculated by the following formula.

每單位面積的OH基的數目(個/nm2)=0.0668×水分量(ppm)/螢光體樣品的比表面積(m2/g) Number of OH groups per unit area (number / nm 2 ) = 0.0668 × Moisture content (ppm) / Specific surface area of the phosphor sample (m 2 / g)

又,前述公式的係數的0.0668係用於使左邊和右邊的單位一致的係數。 The coefficient of 0.0668 in the above formula is a coefficient for matching the left and right units.

<比表面積測定> <Specific surface area measurement>

比表面積測定係使用Micro Data公司製的AUTO MATIC SURFACE ANALYZER MODEL-4232-2(羅馬數字)進行。 The specific surface area is measured using AUTO manufactured by Micro Data MATIC SURFACE ANALYZER MODEL-4232-2 (Roman numerals).

(中位徑(D50)) (Median diameter (D50))

用以下的要領,測定實施例及比較例的各螢光體的中位徑(D50)(平均一次粒徑)。首先,用蒸餾水將以1:1混合氫氟酸(濃度46~48g/100ml的範圍)和硝酸(濃度60g/100ml)者稀釋成4倍,而製作處理液。將此處理液加熱至80℃,一邊攪拌一邊添加相對於處理液100ml為20g以下的量的實施例或比較例的螢光體,使其分散。將螢光體分散後放置1小時,藉由傾析來回收不溶粉末。將回收的粉末進行水洗,使其乾燥。對於乾燥後的不溶粉末,利用雷射繞射散射式粒度分布測定裝置(Beckman Coulter股份公司製的LS 13 320)測定粒徑分布,將體積基準的累積50%的粒徑作為中位徑(D50)。 The following procedures were used to measure the median diameter (D50) (average primary particle diameter) of each phosphor in the examples and comparative examples. First, a 1: 1 mixture of hydrofluoric acid (concentration 46 to 48 g / 100 ml) and nitric acid (concentration 60 g / 100 ml) was diluted 4 times with distilled water to prepare a treatment solution. This treatment liquid was heated to 80 ° C, and the phosphors of Examples or Comparative Examples were added and dispersed in an amount of 20 g or less with respect to 100 ml of the treatment liquid while stirring. The phosphor was dispersed and left for 1 hour, and the insoluble powder was recovered by decantation. The recovered powder was washed with water and dried. For the insoluble powder after drying, the particle size distribution was measured using a laser diffraction scattering particle size distribution measuring device (LS 13 320 manufactured by Beckman Coulter Co., Ltd.), and the 50% volume-based cumulative particle diameter was used as the median diameter (D50 ).

針對實施例及比較例的各螢光體,使用利用玫瑰紅B(rhodamine B)和副標準光源進行了補正的分光螢光光度計(日立High Technologies公司製,F-7000),使用附屬於光度計的固體試料支架,測定在激發波長455nm處的螢光光譜及波峰波長。 For each phosphor in the examples and comparative examples, a spectrofluorimeter (F-7000, manufactured by Hitachi High Technologies) was used, which was corrected with rhodamine B and a sub-standard light source. The solid sample holder was measured, and the fluorescence spectrum and peak wavelength at an excitation wavelength of 455 nm were measured.

(螢光強度) (Fluorescence intensity)

螢光強度係由螢光光譜強度和CIE標準比視感度的積算出。又,單位會依測定裝置、條件而變,因此是任意的,進行以同一條件測定的實施例及比較例的相對比較。將實施例1的螢光強度設為100%而作為基準。又,若螢光強度顯示85%以上的話便為合格值。 The fluorescence intensity is calculated from the product of the fluorescence spectrum intensity and the CIE standard specific sensitivity. The unit varies depending on the measurement device and conditions. Therefore, it is optional, and comparative examples and comparative examples measured under the same conditions are compared. The fluorescence intensity of Example 1 was set to 100% as a reference. If the fluorescence intensity is 85% or more, it is a pass value.

(發光元件的長期穩定性評價) (Evaluation of long-term stability of light-emitting elements)

接著,針對具備實施例及比較例的螢光體粒子的發光元件,藉由測定全光束值的變化率,算出光束保持率,來評價使用時的長期穩定性。全光束的變化的測定,例如,能夠根據電子情報技術產業協會規格JEITA ED-4701/100A半導體裝置的環境及耐久性試驗方法(壽命試驗1(羅馬數字))的高溫高濕偏壓試驗、試驗方法102A,製作組合了例如藍色發光二極體和螢光體的額定電流150mA的發光元件樣品,實施在溫度85℃、85RH%的相對濕度下,在以通電150mA的條件使其發光下放置1000小時的通電試驗,求出以試驗剛開始後的值為基準的經過1000小時後的光束保持率(%)以進行評價。經過1000小時後的光束保持率較佳為95%以上。光束係使用全光束測定系統(Half Moon:大塚電子製的HH41-0773-1),測定從發光元件樣品所放出的螢光的光束。 Next, the light-emitting elements having the phosphor particles of the examples and comparative examples were measured for the change rate of the total beam value, and the beam retention rate was calculated to evaluate the long-term stability during use. The measurement of the change in the total light beam can be, for example, a high-temperature, high-humidity bias test, test according to the environment and durability test method (life test 1 (Roman numerals)) of the semiconductor device according to the JEITA ED-4701 / 100A semiconductor device specification. Method 102A, a light-emitting element sample is prepared by combining, for example, a blue light-emitting diode and a phosphor with a rated current of 150 mA, and the sample is placed under a condition of a temperature of 85 ° C and a relative humidity of 85RH%, and the device is allowed to emit light at a current of 150 mA For a 1,000-hour conduction test, a beam retention rate (%) after 1000 hours based on the value immediately after the start of the test was determined and evaluated. The beam retention rate after 1000 hours is preferably 95% or more. The light beam was measured using a full-beam measurement system (Half Moon: HH41-0773-1, manufactured by Otsuka Electronics), and was used to measure the fluorescent light beam emitted from a light-emitting element sample.

由表1可知,與比較例相比,實施例1~4的Li-α賽龍螢光體係穩定OH基的存在比例高而為10個/nm2以上,α賽龍結晶的比例也高。由此可知,為得到高螢光強度的同時,即使長時間使用,發光效率的降低少,且電性不良少的發光裝置。使用實施例1~4的螢光體的發光元件,由於有許多穩定OH基存在,因此提高了與樹脂的緊貼性,從而發生短路等的電性異常的可能性極小,推定成為長壽命。又,實施例4的Li-α賽龍螢光體,由於有許多穩定OH基存在,因此與實施例1~3的Li-α賽龍螢 光體同樣地光束維持率高,但由於在加熱處理步驟的溫度高,因此顯示螢光體的發光效率稍稍降低的傾向。 As can be seen from Table 1, compared with the comparative example, the existence ratio of the stable OH groups of the Li-α-sialon fluorescent system of Examples 1 to 4 is higher than 10 / nm 2 or more, and the ratio of α-sialon crystals is also high. From this, it can be seen that, in order to obtain a high fluorescence intensity, even if used for a long time, the light-emitting device has a small decrease in luminous efficiency and has a small electrical defect. Since the light-emitting elements using the phosphors of Examples 1 to 4 had many stable OH groups, the adhesion to the resin was improved, and the possibility of electrical abnormalities such as short circuits was extremely small, and it is estimated to have a long life. In addition, the Li-α-Sialon phosphor of Example 4 has many stable OH groups. Therefore, similar to the Li-α-Sialon phosphors of Examples 1 to 3, the beam retention rate is high. Since the temperature of the processing step is high, the luminous efficiency of the phosphor tends to decrease slightly.

相對於此,比較例1係穩定OH基少,Li-α賽龍結晶的比例也低,因此螢光強度低,光束維持率也降低。比較例2係再現根據不超過先前技術的範圍的Li-α賽龍螢光體者,Li-α賽龍結晶的比例高,因此螢光強度高,但穩定OH基少,判斷其光束保持率低並缺乏長期穩定性。 In contrast, Comparative Example 1 has few stable OH groups, and the proportion of Li-α-sialon crystals is also low. Therefore, the fluorescence intensity is low and the beam maintenance ratio is also reduced. Comparative Example 2 reproduces a Li-α-sialon phosphor that does not exceed the range of the prior art. The proportion of Li-α-sialon crystals is high, so the fluorescence intensity is high, but the number of stable OH groups is small, and the beam retention rate is judged. Low and lack long-term stability.

Figure TW201802229AD00001
Figure TW201802229AD00001

Claims (8)

一種Li-α賽龍(Sialon)螢光體,其係在螢光體表面,以10個/nm2以上的存在比例鍵結有穩定OH基,且包含發光活化元素。 A Li-α Sialon phosphor, which is on the surface of the phosphor, has a stable OH group bonded to it at an existing ratio of 10 / nm 2 or more, and contains a light-emitting activating element. 如請求項1之Li-α賽龍螢光體,其中發光活化元素為Eu。 For example, the Li-α Sailong phosphor of claim 1, wherein the luminescence activating element is Eu. 如請求項1或2之Li-α賽龍螢光體,其中含Li比例為1.8質量%以上3.0質量%以下。 For example, the Li-α Sailong phosphor of claim 1 or 2 has a Li content of 1.8% by mass or more and 3.0% by mass or less. 如請求項1至3中任一項之Li-α賽龍螢光體,其中含Eu比例為0.1質量%以上1.5質量%以下。 For example, the Li-α Sailong phosphor according to any one of claims 1 to 3, which contains Eu in an amount of 0.1% to 1.5% by mass. 如請求項1至4中任一項的Li-α賽龍螢光體,其中含氧比例為0.4質量%以上1.3質量%以下。 The Li-α-sialon phosphor according to any one of claims 1 to 4, wherein the oxygen content is 0.4 mass% or more and 1.3 mass% or less. 一種發光元件,其具有如請求項1至5中任一項之Li-α賽龍螢光體、及對該螢光體照射激發光的發光光源。 A light-emitting element includes the Li-α Sailong phosphor according to any one of claims 1 to 5 and a light-emitting light source that irradiates the phosphor with excitation light. 如請求項6的發光元件,其中發光光源為發光二極體或雷射二極體。 The light-emitting element according to claim 6, wherein the light-emitting light source is a light-emitting diode or a laser diode. 一種發光裝置,其具備如請求項6或7之發光元件。 A light-emitting device includes a light-emitting element according to claim 6 or 7.
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