TW201800239A - 附有銀基材層之金屬構件、附有銀基材層之絕緣電路基板、半導體裝置、附有散熱片之絕緣電路基板及附有銀基材層之金屬構件之製造方法 - Google Patents

附有銀基材層之金屬構件、附有銀基材層之絕緣電路基板、半導體裝置、附有散熱片之絕緣電路基板及附有銀基材層之金屬構件之製造方法 Download PDF

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TW201800239A
TW201800239A TW106103324A TW106103324A TW201800239A TW 201800239 A TW201800239 A TW 201800239A TW 106103324 A TW106103324 A TW 106103324A TW 106103324 A TW106103324 A TW 106103324A TW 201800239 A TW201800239 A TW 201800239A
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silver
layer
substrate
glass
metal member
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TW106103324A
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TWI726048B (zh
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西元修司
長友義幸
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三菱綜合材料股份有限公司
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    • H—ELECTRICITY
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    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/142—Metallic substrates having insulating layers
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Abstract

本發明係一種附有銀基材層之金屬構件，附有銀基材層之絕緣電路基板，半導體裝置，附有散熱片之絕緣電路基板及附有銀基材之金屬構件之製造方法，其中，此附有銀基材層之金屬構件係具備：與被接合體(3)加以接合之金屬構件(12)，和加以形成於與此金屬構件(12)的被接合體(3)之接合面的銀基材層(30)：銀基材層(30)係由加以形成於金屬構件(12)側的玻璃層(31)，和加以層積形成於此玻璃層(31)之銀層(32)所成，而在銀基材層(30)之銀層(32)側表面的空隙的面積率則作為25%以下。

Description

附有銀基材層之金屬構件、附有銀基材層之絕緣電路基板、半導體裝置、附有散熱片之絕緣電路基板及附有銀基材層之金屬構件之製造方法
本發明係有關具備與被接合體加以接合之金屬構件與加以形成於此金屬構件表面之銀基材層之附有銀基材層之金屬構件，具有此附有銀基材層之金屬構件的絕緣電路基板，具備此附有銀基材層之絕緣電路基板的半導體裝置，附有散熱片之絕緣電路基板及附有銀基材之金屬構件之製造方法。
本申請係依據申請於2016年2月1日之申請於日本之日本特願2016-017304號而主張優先權，而將此內容援用於其內容。
在LED或功率模組等之半導體裝置中，係作為加以接合有半導體元件於導電材料所成之電路層上之構 造。
在為了控制風力發電，電動汽車，混合動力汽車所使用之大電力控制用的功率半導體元件中，係從發熱量為多之情況，作為搭載此之基板，係自以往加以廣泛使用具備：例如AlN(氮化鋁)、Al2O3(氧化鋁)等之陶瓷基板所成之絕緣層，和於此絕緣層之一方的面，配設導電性優越之金屬而形成之電路層的絕緣電路基板(功率模組基板)。
例如，在專利文獻1所示之功率模組(半導體裝置)中，係作為具備形成Al或Cu等之金屬所成之電路層於陶瓷基板之一方的面之功率模組用基板(絕緣電路基板)，和接合於此電路層上之半導體元件的構造。
另外，亦加以提供具備配設對於熱傳導性之金屬於陶瓷基板之另一方的面而形成之金屬層的構成。並且，於功率模組用基板之金屬層，加以接合散熱片，而作為將在半導體元件所產生的熱，傳達於功率模組用基板側，藉由散熱片而散熱於外部的構成。
對於將半導體元件等之電子構件接合於電路層時，或將散熱片接合於金屬層時，例如，如專利文獻1所示，使用焊錫材的方法則被廣泛使用。
在最近，從環境保護的觀點，作為使用於與半導體元件等之電子構件和電路層，散熱片和金屬層接合時之焊錫材，例如，Sn-Ag系、Sn-In系、或Sn-Ag-Cu系等之無鉛焊錫則成為主流。
在此，在鋁或鋁合金所成之電路層及金屬層中，係於表面加以形成有鋁的自然氧化膜之故，良好地進行經由焊錫材與半導體元件及散熱片的接合者則為困難。
另外，在銅或銅合金所成之電路層及金屬層中，係所熔融之焊錫材與銅則產生反應，對於電路層之內部係侵入有焊錫材的成分，而有電路層及金屬層之特性產生劣化之虞。
因此，以往係如專利文獻1所示，形成Ni電鍍膜於電路層及金屬層的表面之後，經由焊錫材而實施在半導體元件。
另外，如記載於專利文獻1，對於使用焊錫材而接合半導體元件及散熱片的情況，對於在高溫環境下所使用時，焊錫的一部分則產生熔融，而有半導體元件及散熱片與絕緣電路基板之接合信賴性下降之虞。
另一方面，作為未使用焊錫材之接合方法，例如，對於專利文獻2係加以提案有使用Ag奈米電糊而接合半導體元件等之電子構件或散熱片之技術。
另外，例如，對於專利文獻3，4，係加以提案有使用包含金屬氧化物粒子與有機物所成之還原劑的氧化物電糊而接合半導體元件等之電子構件或散熱片之技術。
但如專利文獻2-4所揭示地，對於未使用焊錫材而使用金屬電糊或者氧化物電糊而接合半導體元件等之電子構件之情況，係此等電糊之燒成體所成之接合層則比較於焊錫材，厚度則加以薄化形成之故，熱循環負荷時 之應力則容易作用於半導體元件等之電子構件，而有半導體元件等之電子構件本身產生破損之虞。同樣地，當形成於金屬層與散熱片之間的接合層變薄時，經由絕緣電路基板與散熱片之熱膨脹係數的差而產生之熱應變則作用於絕緣電路基板，而有對於絕緣層產生龜裂之虞。
因此，例如，對於專利文獻5，係加以提案有使用玻璃含有銀電糊而於鋁或銅所成之電路層上，形成銀基材層之後，藉由銀電糊而接合電路層與半導體元件之技術。在此技術中，於鋁或銅所成之電路層的表面，經由塗佈玻璃含有銀電糊而進行燒成之時，使加以形成於電路層之表面的氧化被膜反應於玻璃而除去，形成銀基材層，於加以形成有此銀基材層之電路層上，藉由銀電糊之燒成體所成之銀接合層而接合半導體元件。在此，銀基材層係具備：經由玻璃則與電路層之氧化被膜反應而加以形成之玻璃層，和加以形成於此玻璃層上之銀層。對於此玻璃層係分散有導電性粒子，而經由此導電性粒子而加以確保玻璃層之導電性。
如根據記載於此專利文獻5之技術時，此情況，從可經由銀基材層與銀電糊及氧化銀電糊之燒成體所成之接合層而確保充分之厚度情況，成為可抑制半導體元件之破損或在絕緣層之龜裂的產生者。
〔先前技術文獻〕 〔專利文獻〕
[專利文獻1]日本特開2004-172378號公報
[專利文獻2]日本特開2006-202938號公報
[專利文獻3]日本特開2008-208442號公報
[專利文獻4]日本特開2009-267374號公報
[專利文獻5]日本特開2013-012706號公報
但在最近中，自矽半導體期待有SiC或GaN等化合物半導體元件之實用化，為了預期半導體元件本身之耐熱性的提升，而有半導體裝置之使用溫度變高之傾向。
在此，如專利文獻5所記載地，對於在形成銀基材層於使用玻璃含有銀電糊而由鋁或銅所成之電路層上之後，使用銀電糊及氧化銀電糊而接合半導體元件及散熱片的情況，係例如，在加以負荷到達至200℃以上的高溫之冷熱循環時，於銀電糊及氧化銀電糊之燒成體所成之接合層，產生斷裂，而有半導體元件及散熱片產生剝離之虞。
因此，即使在加以負荷到達至高溫之冷熱循環之情況，亦要求可抑制在接合層之斷裂的產生之附有銀基材層之金屬構件。
本發明係有鑑於前述情事所作為之構成，其目的為提供：即使在比較高溫環境下所使用之情況，亦可抑制在接合層內之斷裂的產生，對於被接合體與金屬構件 之接合信賴性優越之附有銀基材層之金屬構件，由此附有銀基材層之金屬構件所成之附有銀基材層之絕緣電路基板，使用此附有銀基材層之絕緣電路基板之半導體裝置及附有散熱片之絕緣電路基板及附有銀基材之金屬構件之製造方法。
為了解決上述課題而達成前述目的，本發明者們進行銳意檢討之結果，於銀基材層上，形成包含銀及氧化銀之一方或雙方與有機物之接合材的燒成體所成之接合層而接合被接合體的情況，得到例如，當負荷到達至200℃以上之高溫的冷熱循環時，將存在於銀基材層之中接觸於接合層之表面的空隙作為起點，於接合層內產生有斷裂之見解。
本發明係依據上述之見解而作為之構成，本發明之附有銀基材層之金屬構件係具備與被接合體加以接合之金屬構件，和加以形成於與此金屬構件的前述被接合體之接合面的銀基材層之附有銀基材層之金屬構件，其特徵為前述銀基材層係由加以形成於前述金屬構件側的玻璃層，和加以層積形成於此玻璃層之銀層所成，而在前述銀基材層之前述銀層側表面的空隙的面積率則作為25%以下者。
在此構成之附有銀基材層之金屬構件中，因前述銀基材層之前述銀層側表面的空隙的面積率則作為 25%以下之故，對於此銀基材層上，形成包含銀及氧化銀之一方或雙方與有機物之接合材的燒成體所成之接合層而接合被接合體的情況，對於在高溫環境下的使用時，亦可抑制將銀基材層之銀層側表面的空隙作為起點，於接合層內產生有斷裂者。因而，本發明之附有銀基材層之金屬構件係成為即使在高溫環境下亦可安定使用。
另外，本發明之附有銀基材層之絕緣電路基板係具備：絕緣層，和加以配設於此絕緣層之一方的面之電路層，和加以形成於前述電路層之中，與前述絕緣層相反側的面之銀基材層之附有銀基材層之絕緣電路基板，其特徵為前述電路層及前述銀基材層則作為上述之附有銀基材層之金屬構件，而在前述銀基材層之前述銀層側表面的空隙的面積率則作為25%以下者。
在此構成之附有銀基材層之絕緣電路基板中，因前述銀基材層之前述銀層側表面的空隙的面積率則作為25%以下之故，對於此銀基材層上，形成包含銀及氧化銀之一方或雙方與有機物之接合材的燒成體所成之接合體而接合半導體元件等之電子構件的情況，對於在高溫環境下的使用時，亦可抑制將銀基材層之銀層側表面的空隙作為起點，於接合層內層產生有斷裂者。因而，即使在高溫環境下使用的情況，可確保電路層與半導體元件等之電子構件的接合信賴性者。
更且，本發明之附有銀基材層之絕緣電路基板係具備：絕緣層，和加以配設於此絕緣層之一方的面之 電路層，和加以配設於前述絕緣層之另一方的面之金屬層，和加以形成於前述金屬層之中，與前述絕緣層相反側的面之銀基材層之附有銀基材層之絕緣電路基板，其特徵為前述電路層及前述銀基材層則作為上述之附有銀基材層之金屬構件，而在前述銀基材層之前述銀層側表面的空隙的面積率則作為25%以下者。
在此構成之附有銀基材層之絕緣電路基板中，因前述銀基材層之前述銀層側表面的空隙的面積率則作為25%以下之故，對於此銀基材層上，形成包含銀及氧化銀之一方或雙方與有機物之接合材的燒成體所成之接合體而接合散熱片等之情況，對於在高溫環境下的使用時，亦可抑制將銀基材層之銀層側表面的空隙作為起點，於接合層內層產生有斷裂者。因而，即使在高溫環境下使用的情況，可確保金屬層與散熱片等之接合信賴性者。
另外，本發明之半導體裝置係具備上述附有銀基材層之絕緣電路基板，和加以接合於前述電路層之前述銀基材層之半導體元件的半導體裝置，其特徵為前述半導體元件與前述銀基材層係藉由包含銀及氧化銀之一方或雙方與有機物之接合材的燒成體所成之接合層而加以接合者。
如根據如此構成之半導體裝置，因前述銀基材層之前述銀層側表面的空隙的面積率則作為25%以下之故，可抑制將銀基材層之銀層側表面的空隙作為起點，於接合層內層產生有斷裂者。因而，即使在高溫環境下使用 的情況，亦可確保電路層與半導體元件的接合信賴性者。
更且，本發明之附有散熱片之絕緣電路基板係具備上述附有銀基材層之絕緣電路基板，和加以接合於前述金屬層之散熱片之附有散熱片之絕緣電路基板，其特徵為前述散熱片係藉由形成於前述金屬層之前述銀基材層，和包含銀及氧化銀之一方或雙方與有機物之接合材的燒成體所成之接合層而加以接合者。
如根據如此構成之附有散熱片之絕緣電路基板，因前述銀基材層之前述銀層側表面的空隙的面積率則作為25%以下之故，可抑制將銀基材層之銀層側表面的空隙作為起點，於接合層內層產生有斷裂者。因而，即使在高溫環境下使用的情況，亦可確保金屬層與散熱片之接合信賴性者。
另外，本發明之附有銀基材之金屬構件之製造方法係上述附有基材層之金屬構件的製造方法，其特徵為具備：於前述金屬構件之中加以接合前述被接合體之接合面，塗佈含有玻璃成分之玻璃含有銀電糊之玻璃含有銀電糊塗佈工程，和使所塗佈之玻璃含有銀電糊加以乾燥之第1乾燥工程，和於乾燥後之前述玻璃含有銀電糊上，塗佈銀糊之銀電糊塗佈工程，和使所塗佈之銀電糊加以乾燥之第2乾燥工程，和燒成乾燥後之前述玻璃含有銀電糊及前述銀電糊，再形成具有玻璃層及銀層之銀基材層之同時，將在前述銀基材層之前述銀層側表面的空隙之面積率作為25%以下之燒成工程者。
如根據此構成之附有銀基材之金屬構件之製造方法，在於金屬構件塗佈玻璃含有銀電糊而進行乾燥之後，於所塗佈乾燥之玻璃含有銀電糊上，塗佈銀電糊而進行乾燥，之後，因進行燒成之故，於金屬構件側形成玻璃層，再於此玻璃層上形成銀層之同時，未產生有因玻璃引起於銀層表面的空隙，而可將在銀層表面的空隙之面積率作為25%以下者。
如根據本發明，即使在比較高溫環境下所使用之情況，亦可提供：亦可抑制在接合層內之斷裂的產生，對於被接合體與金屬構件之接合信賴性優越之附有銀基材層之金屬構件，由此附有銀基材層之金屬構件所成之附有銀基材層之絕緣電路基板，使用此附有銀基材層之絕緣電路基板之半導體裝置及附有散熱片之絕緣電路基板及附有銀基材層之金屬構件之製造方法。
1，101‧‧‧功率模組(半導體裝置)
3，103‧‧‧半導體元件
10，110‧‧‧功率模組用基板(絕緣電路基板)
11，111‧‧‧陶瓷基板(絕緣層)
12，112，212‧‧‧電路層
30，130a，130b，130c，230‧‧‧銀基材層
31‧‧‧玻璃層
32‧‧‧銀層
50，150‧‧‧附有銀基材層之功率模組用基板(附有銀基材層之絕緣電路基板)
113‧‧‧金屬層
160‧‧‧附有散熱片之功率模組用基板(附有散熱片之絕緣電路基板)
161‧‧‧散熱片
圖1係顯示本發明之第1實施形態之半導體裝置(功率模組)之概略說明圖。
圖2係顯示銀基材層與電路層之接合部份之要部擴大剖面圖。
圖3係本發明之第1實施形態之附有銀基材層之絕緣 電路基板(附有銀基材層之功率模組用基板)之製造方法及半導體裝置(功率模組)之製造方法的流程圖。
圖4係本發明之第1實施形態之附有銀基材層之絕緣電路基板(附有銀基材層之功率模組用基板)之製造方法及半導體裝置(功率模組)之製造方法的概略說明圖。
圖5係本發明之第2實施形態之半導體裝置(功率模組)及附有銀基材層之絕緣電路基板(附有銀基材層之功率模組用基板)之概略說明圖。
圖6係本發明之第2實施形態之附有散熱片之絕緣電路基板(附有散熱片之功率模組用基板)之製造方法及半導體裝置(功率模組)之製造方法的流程圖。
圖7A係本發明之第2實施形態之附有銀基材層之絕緣電路基板(附有銀基材層之功率模組用基板)之製造方法的概略說明圖。
圖7B係本發明之第2實施形態之附有銀基材層之絕緣電路基板(附有散熱片之功率模組用基板)之製造方法的概略說明圖。
圖8係本發明之第2實施形態之附有散熱片之絕緣電路基板(附有散熱片之功率模組用基板)之製造方法及半導體裝置(功率模組)之製造方法的概略說明圖。
圖9係顯示本發明之其他實施形態之半導體裝置之概略說明圖。
圖10係在本發明例及比較例之銀基材層之銀層側表面的觀察照片。
以下，對於本發明之實施形態，參照附加的圖面加以說明。
<第1實施形態>
首先，對於本發明之第1實施形態加以說明。然而，在本實施形態之半導體裝置係加以搭載為了控制風力發電，電動汽車等之電性車輛等所使用之大電力控制用的功率半導體元件之功率模組。
於圖1，顯示本發明之第1實施形態的功率模組(半導體裝置)1。此功率模組1係具備：具有銀基材層30與功率模組用基板10之附有銀基材層之功率模組用基板(附有銀基材層之絕緣電路基板)50，和藉由接合層2而加以接合於此附有銀基材層之功率模組用基板50之一方的面(在圖1中為上面)之半導體元件3。
功率模組用基板10係如圖1所示，具備構成絕緣層之陶瓷基板11，和配設於此陶瓷基板11之一方的面(在圖1中為上面)之電路層12。
陶瓷基板11係防止配設於絕緣層之陶瓷基板11之一方的面之電路層12與配設於絕緣層之陶瓷基板11之另一方的面之金屬層(圖示外)之間的電性連接之構成，例如，由絕緣性高之AlN(氮化鋁)、Si3N4(氮化矽)、Al2O3(氧化鋁)等而加以構成。在本實施形態 中，以散熱性優越之AlN(氮化鋁)而加以構成。另外，陶瓷基板11之厚度係加以設定為0.2mm~1.5mm之範圍內，而在本實施形態中，加以設定為0.635mm。
電路層12係於陶瓷基板11之一方的面，經由加以接合具有導電性之金屬板之時而加以形成。在本實施形態中，電路層12係經由純度為99.99mass%以上的鋁(所謂，4N鋁)之延壓板所成之鋁板則加以接合於陶瓷基板11之時而加以形成。然而，對於此電路層12係加以形成有電路圖案，而其一方的面(在圖1中為上面)係作為加以搭載有半導體元件3之搭載面。在此，電路層12之厚度係加以設定為0.1mm以上3.0mm以下之範圍內，而在本實施形態中，加以設定為0.6mm。
並且，於此電路層12之一方的面(與陶瓷基板11相反側的面)，加以形成銀基材層30。在本實施形態中，上述的電路層12與銀基材層30則作為附有銀基材層之金屬構件。
此銀基材層30係如後述，作為包含玻璃成分之玻璃含有銀電糊之燒成體。此銀基材層30係在接合半導體元件3之前的狀態中，如圖1及圖2所示，具備加以形成於電路層12側之玻璃層31，和加以形成於此玻璃層31上之銀層32。
對於玻璃層31內部係加以分散有粒徑為數毫微米程度之細微的導電性粒子33。此導電性粒子33係作為含有銀或鋁之至少一方之結晶性粒子。然而，玻璃層 31內之導電性粒子33係例如，由使用透過型電子顯微鏡(TEM)者而加以觀察者。
另外，對於銀層32內部係加以分散有粒徑為數毫微米程度之微細的玻璃粒子(未圖示)。
另外，在本實施形態中，從由電路層12為純度99.99mass%以上的鋁而加以構成之情況，對於電路層12之表面，係加以形成在大氣中自然產生之鋁氧化被膜12A。在此，在加以形成有前述銀基材層30之部分中，加以除去此鋁氧化被膜12A，而於電路層12上直接加以形成有銀基材層30。也就是，如圖2所示，加以直接接合構成電路層12的鋁與玻璃層31。
在本實施形態中，如圖2所示，自然產生於電路層12上之鋁氧化被膜12A的厚度to則作為4nm≦to≦6nm之範圍內。另外，玻璃層31之厚度tg則呈成為0.01μm≦tg≦5μm之範圍內，而銀層32之厚度ta則呈成為1μm≦ta≦100μm之範圍內地加以構成。
然而，此銀基材層30之厚度方向的電性阻抗值P則作為0.5Ω以下。在此，在本實施形態中，在銀基材層30之厚度方向的電性阻抗值P係作為在圖2之銀基材層30之上面與電路層12之上面之間的電性阻抗值。此係因構成電路層12之鋁(4N鋁)的電性阻抗則比較於銀基材層30之厚度方向之電性阻抗而為非常的小之故。然而，對於此電性阻抗的測定時，係作為測定銀基材層30之上面中央點，和自銀基材層30之前述上面中央點至銀 基材層30上面端部為止之距離與僅同距離部分，自銀基材層30下面端部朝向電路層12之外周方向遠離之電路層12上的點之間的電性阻抗。
並且，在本實施形態之附有銀基材層之功率模組用基板50中，在銀基材層30之銀層32側之表面，即加以接合半導體元件3之接合面的空隙之面積率則作為25%以下。然而，對於在此銀基材層30之銀層32側之表面的空隙之面積率中，以雷射顯微鏡而觀察銀基材層30之銀層32側之表面，經由將所得到之畫像進行2值化處哩，作為空隙而判定黑色部而可算出者。
在本實施形態之功率模組1中，如圖1所示，於半導體元件3與銀基材層30之間加以設置接合層2。
接合層2係作為含有銀粒子及氧化銀粒子之至少一方或雙方與有機物之接合材的燒成體，在本實施形態中，作為含有氧化銀粒子與有機物所成之還原劑的氧化銀電糊之燒成體。即，接合層2係作為加以還原氧化銀的銀之燒成體。在此，經由還原氧化銀而加以生成的粒子係例如，從粒徑10nm~1μm為非常細微之情況，成為加以形成緻密之銀的燒成體所成之接合層2者。
對於接合層2，係如銀層32地，粒徑為數毫微米程度的細微之玻璃粒子係未分散。
接著，對於本實施形態之功率模組1之製造方法，及附有銀基材層之功率模組用基板50之製造方 法，參照圖3及圖4而加以說明。
(玻璃含有銀電糊塗佈工程S01)
首先，準備於陶瓷基板11之一方的面加以形成電路層12之功率模組用基板10，再於此功率模組用基板10之電路層12上，塗佈玻璃含有銀電糊40。然而，對於在塗佈玻璃含有銀電糊40時，係可採用網版印刷法，平板印刷法，感光性處理等之種種手段者。
玻璃含有銀電糊40之塗佈厚度係作為1μm以上30μm以下之範圍內即可。在本實施形態中，經由網版印刷法而將玻璃含有銀電糊40形成為圖案狀。
在此，對於上述之玻璃含有銀電糊加以說明。
此玻璃含有銀電糊係含有銀粉末，和玻璃粉末，和樹脂，和溶劑，和分散劑，而銀粉末和玻璃粉末所成之粉末成分的含有量則作為玻璃含有銀電糊全體之60質量%以上90質量%以下，殘留部則作為樹脂，溶劑，分散劑。
然而，在本實施形態中，銀粉末和玻璃粉末所成之粉末成分的含有量係作為玻璃含有銀電糊全體之85質量%。
另外，此玻璃含有銀電糊係加以調整為其黏度為10Pa．s以上500Pa．s以下、更理想為50Pa．s以上300Pa．s以下。
銀粉末係其粒徑則作為0.05μm以上1.0μm以 下，而在本實施形態中，使用平均粒徑0.8μm者。
玻璃粉末係例如，含有氧化鉛，氧化鋅，氧化矽，氧化硼，氧化磷及氧化鉍之任1種或2種以上，其玻璃轉移溫度則作為300℃以上450℃以下、軟化溫度則作為600℃以下，結晶化溫度則作為450℃以上。
在本實施形態中，由氧化鉛與氧化鋅與氧化硼所成，使用平均粒徑為0.5μm之玻璃粉末。
另外，銀粉末之重量A與玻璃粉末之重量G之重量比A/G係加以調整為自80/20至99/1之範圍內，在本實施形態中，做成A/G=80/5。
溶劑係沸點則200℃以上者為適合，在本實施形態中，使用乙二醇二丁醚。
樹脂係調整玻璃含有銀電糊的黏度者，以500℃以上加以分解者為適合。在本實施形態中，使用乙基纖維。
另外，在本實施形態中，添加二羧酸系之分散劑。然而，未添加分散劑而構成玻璃含有銀電糊亦可。
此玻璃含有銀電糊係將混合銀粉末與玻璃粉末之混合粉末，和混合溶劑與樹脂之有機混合物，與分散劑同時，經由混合器而作為預備混合，將所得之預備混合物，經由輥軋機而揉搓同時進行混合後，經由電糊過濾機而過濾所得到之調和物而加以製造出。
(第1乾燥工程S02)
接著，於電路層12之一方的面，在塗佈玻璃含有銀 電糊40之狀態，進行乾燥。然而，在此第1乾燥工程S02中，溶劑則呈作為充分乾燥地，以100℃以上150℃以下之溫度保持15分以上30分以下而進行乾燥處理。乾燥時之環境係可在大氣，真空，N2或Ar等之非活性環境而進行者。
(銀電糊塗佈工程S03)
接著，於所乾燥之玻璃含有銀電糊40上，塗佈銀電糊42。作為銀電糊42之塗佈厚度係作為1μm以上30μm以下即可。
然而，此銀電糊42係作為自上述之玻璃含有銀電糊40除去玻璃成分者。使用於銀電糊42之銀粉末係與在玻璃含有銀電糊40所使用之銀粉末相同粒徑者為佳。經由使用相同粒徑的銀粉末之時，可在後述之燒成工程中，良好地使銀粉末燒結者。
銀電糊42係以與玻璃含有銀電糊40同樣的方法，加以塗佈於所乾燥之玻璃含有銀電糊40上。
(第2乾燥工程S04)
接著，在呈層積於玻璃含有銀電糊40地，塗佈銀電糊42之狀態，進行乾燥。然而，在此第2乾燥工程S04中，溶劑則呈作為充分乾燥地，以100℃以上150℃以下之溫度保持15分以上30分以下而進行乾燥處理。乾燥時之環境係可在大氣，真空，N2或Ar等之非活性環境而進 行者。
在此，乾燥後之玻璃含有銀電糊40之厚度t1與銀電糊42之厚度t2的比t1/t2則作為0.2以上5.0以下之範圍內者為佳。
(燒成工程S05)
接著，在層積玻璃含有銀電糊40及銀電糊42於電路層12之一方的面之狀態，裝入至加熱爐71內而進行加熱處理，進行玻璃含有銀電糊40之燒成。然而，此時之燒成溫度係例如，加以設定為350℃以上645℃以下。經由此燒成工程S05，加以形成具備玻璃層31與銀層32之銀基材層30。另外，在銀基材層30之銀層32側的表面之空隙的面積率則作為25%以下。
在燒成工程S05中，在玻璃含有銀電糊40之玻璃粉末成分則軟化流動之同時，與銀或鋁產生反應，加以形成分散粒徑為數毫微米程度之細微的導電性粒子33的玻璃層31，和分散粒徑為數毫微米程度之細微的玻璃粒子的銀層32。
銀電糊42係因為含有成為燒結阻礙之玻璃之故，銀之結晶粒則成為容易成長。因此，在銀電糊42燒結之範圍，即銀基材層30之銀層32側的表面中，空隙則降低。
空隙之面積率係更佳為15%以下。
在此燒成工程S05中，在加以燒成玻璃含有銀電糊40時，經由玻璃層31之時，加以熔融除去自然產 生於電路層12表面之鋁氧化被膜12A，直接形成玻璃層31於電路層12。另外，對於玻璃層31內部係成為加以分散有粒徑為數毫微米程度之微細的導電性粒子33者。此導電性粒子33係作為含有銀或鋁之至少一方的結晶性粒子，加以推測在燒成時，析出於玻璃層31內部者。
更且，於銀層32之內部，成為加以分散粒徑為數毫微米程度之玻璃粒子者。此玻璃粒子係加以推測在銀粒子之燒成進行的過程，殘存之玻璃成分則產生凝集者。
如以上作為，加以製造本實施形態之附有銀基材層之功率模組用基板50。
(接合材塗佈工程S06)
接著，於銀基材層30之表面，作為成為接合層2之接合材，塗佈含有銀及氧化銀之一方或雙方與有機物之接合材45。在本實施形態中，作為接合材而使用氧化銀電糊。
然而，對於在塗佈氧化銀電糊時，係可採用網版印刷法，平板印刷法，感光性處理等之種種手段者。在本實施形態中，經由網版印刷法而印刷氧化銀電糊45。
在此，對於上述之氧化銀電糊加以說明。
此氧化銀電糊係含有氧化銀粉末(氧化銀粒子)，和還原劑，和樹脂，和溶劑，在本實施形態中，加以上於此而含有有機金屬化合物粉末。
在氧化銀電糊中，氧化銀粉末之含有量則作為氧化銀 電糊全體之60mass%以上92mass%以下，而還原劑的含有量則作為氧化銀電糊全體之5mass%以上20mass%以下，有機金屬化合物粉末的含有量則作為氧化銀電糊全體之0mass%以上10mass%以下，殘留部則作為溶劑。在此氧化銀電糊中，為了抑制殘存未反應的有機物於經由燒結所得到之接合層2，而未添加分散劑及樹脂。
還原劑係作為具有還原性之有機物，例如，可使用醇，有機酸者。
有機金屬化合物係具有根據經由熱分解而生成之有機酸而促進氧化銀之還原反應或有機物之分解反應之作用者，例如，加以適用蟻酸銀、醋酸銀、丙酸銀、苯甲酸銀、草酸銀等之羧酸系金屬鹽等。
然而，此氧化銀電糊係加以調整為其黏度為10Pa．s以上500Pa．s以下、更理想為50Pa．s以上300Pa．s以下。
(半導體元件接合工程S07)
接著，在塗佈接合材(氧化銀電糊)45之狀態而進行乾燥(例如，在室溫，大氣環境進行24小時保管)之後，於接合材45上層積半導體元件3，在層積半導體元件3與附有銀基材層之功率模組用基板50之狀態，裝入至加熱爐72內，進行接合材(氧化銀電糊)45之燒成，形成接合層2而接合半導體元件3。
在此半導體元件接合工程S07中，經由將半導體元件 3與附有銀基材層之功率模組用基板50加壓於層積方向之狀態而進行加熱之時，可更確實地進行接合者。此情況，層積方向的加壓壓力係作為0.5~10MPa者為佳。
由如此作為，加以形成接合層2於銀基材層30上，加以接合半導體元件3與電路層12。經由此，加以製造本實施形態之功率模組1。
如根據作為如以上構成之有關本實施形態之功率模組1及附有銀基材層之功率模組用基板50時，於電路層12之一方的面，加以形成玻璃層31與加以層積配置於此玻璃層31上之銀層32所成之銀基材層30，而銀基材層30之中，在銀層32側表面(即，與半導體元件3之接合側面或與接合層2之接觸面)的空隙之面積率則因作為25%以下之故，即使為負荷到達至比較高溫之冷熱循環的情況，可抑制於加以形成於銀基材層30上之氧化銀電糊之燒成體所成之接合層2，產生將銀基材層30之銀層32側表面的空隙作為起點之斷裂者。因而，即使在高溫環境下使用的情況，亦可確保電路層12與半導體元件3的接合信賴性者。
在本發明，高溫環境下係顯示200℃以上之溫度環境。
另外，在本實施形態中，因具備：塗佈玻璃含有銀電糊40於電路層12上之玻璃含有銀電糊塗佈工程S01，和使所塗佈之玻璃含有銀電糊40乾燥之第1乾燥工程S02，和於所乾燥之玻璃含有銀電糊40上，塗佈銀電 糊42之銀電糊塗佈工程S03，和使所塗佈之銀電糊42乾燥之第2乾燥工程S04，和燒成加以層積於電路層12上之玻璃含有銀電糊40及銀電糊42之燒成工程S05之故，於電路層12側加以形成玻璃層31，而於此玻璃層31上加以形成銀層32之同時，未產生有因玻璃引起之空隙於銀層32表面，而可將在銀層32側表面之空隙的面積率作為25%以下者。
<第2實施形態>
接著，對於本發明之第2實施形態，參照圖5至圖8加以說明。於圖5，顯示本發明之第2實施形態的半導體裝置101。此半導體裝置101係具備：附有散熱片之功率模組用基板(附有散熱片之絕緣電路基板)160，和藉由第1接合層102而加以接合於附有散熱片之功率模組用基板160之一方的面(在圖5為上面)側之半導體元件103。
另外，附有散熱片之功率模組用基板160係具備：附有銀基材層之功率模組用基板150，和藉由第2接合層105而加以接合於附有銀基材層之功率模組用基板150之另一方的面(在圖5為下面)側之散熱片161。
附有銀基材層之功率模組用基板150係如圖5所示，具備：陶瓷基板111，和加以配設於此陶瓷基板111之一方的面(在圖5中為上面)之電路層112(金屬構件)，和加以配設於陶瓷基板111之另一方的面(在圖 5中為下面)之金屬層113(金屬構件)，和加以形成於電路層112之一方的面之第1銀基材層130a，和加以形成於金屬層113之另一方的面之第2銀基材層130b。
陶瓷基板111係為防止電路層112與金屬層113之間的電性連接之構成，在本實施形態中，以絕緣性高之AlN(氮化鋁)而加以構成。在此，陶瓷基板111之厚度係加以設定為0.2mm~1.5mm之範圍內，而在本實施形態中，加以設定為0.635mm。
電路層112係於陶瓷基板111之一方的面，經由加以接合銅或銅合金所成之銅板之時而加以形成。在本實施形態中，作為構成電路層112之銅板，加以使用無氧銅的延壓板。對於此電路層112係加以形成有電路圖案，而其一方的面則作為加以搭載有半導體元件103之搭載面。
在此，電路層112之厚度係加以設定為0.1mm以上3.0mm以下之範圍內，而在本實施形態中，加以設定為0.6mm。
金屬層113係經由加以接合鋁或鋁合金所成之鋁板於陶瓷基板111之另一方的面之時而加以形成。在本實施形態中，作為構成金屬層113之鋁板，加以使用純度99.99mass%以上的鋁(4N鋁)之延壓板。在此，金屬層113之厚度係加以設定為0.5mm以上6mm以下之範圍內，而在本實施形態中，加以設定為1.0mm。
散熱片161係為散發絕緣電路基板110側的 熱之構成。散熱片161係由熱傳導性良好之材質加以構成者為佳，在本實施形態中，係經由A6063(Al合金)而加以構成。對於此散熱片161係加以設置為了流動冷卻用的流體之流路162。
另外，對於散熱片161之中，與金屬層113加以接合之範圍，係加以形成第3銀基材層130c。
在本實施形態中，電路層112及第1銀基材層130a，金屬層113及第2銀基材層130b，散熱片161及第3銀基材層130c則各成為附有銀基材層之金屬構件。
此等第1銀基材層130a，第2銀基材層130b，第3銀基材層130c係與第1實施形態同樣地，作為含有玻璃成分之玻璃含有銀電糊與銀電糊之燒成體。此等第1銀基材層130a，第2銀基材層130b，第3銀基材層130c係在接合前之狀態中，與第1實施形態同樣地，具備：加以形成於電路層112，金屬層113及散熱片161側之玻璃層，和加以形成於此玻璃層上之銀層。
並且，在本實施形態中，第1銀基材層130a，第2銀基材層130b，第3銀基材層130c之中，在銀層側表面的空隙的面積率則作為25%以下。
另外，在本實施形態之功率模組101中，第1接合層102及第2接合層105係作為含有銀粒子與氧化銀粒子之至少一方或雙方與有機物之接合材的燒成體，而在本實施形態中，與第1實施形態同樣地，作為含有氧化銀 粒子與有機物所成之還原劑的氧化銀電糊之燒成體。
接著，對於本實施形態之功率模組101之製造方法，及附有銀基材層之功率模組用基板150及附有散熱片之功率模組用基板160之製造方法，參照圖6至圖8而加以說明。
(玻璃含有銀電糊塗佈工程S101)
首先，準備：加以形成電路層112於陶瓷基板111之一方的面，而於陶瓷基板111之另一方的面，加以形成金屬層113之功率模組用基板110，而於功率模組用基板110之電路層112，塗佈玻璃含有銀電糊40之同時，於金屬層113塗佈玻璃含有銀電糊40。作為塗佈厚度係作為1μm以上30μm以下即可。
更且，於散熱片161之中，與金屬層113加以接合之接合面，塗佈玻璃含有銀電糊40。
(第1乾燥工程S102)
接著，於電路層112，金屬層113及散熱片161，在塗佈玻璃含有銀電糊40之狀態，進行乾燥。
(銀電糊塗佈工程S103)
接著，於所乾燥之玻璃含有銀電糊40上，塗佈銀電糊42。
然而，此銀電糊42係作為自上述之玻璃含有銀電糊 40除去玻璃成分者。使用於銀電糊42之銀粉末係與在玻璃含有銀電糊40所使用之銀粉末相同粒徑者為佳。經由使用相同粒徑的銀粉末之時，可在後述之燒成工程中，良好地使銀粉末燒結者。
(第2乾燥工程S104)
接著，在呈層積於玻璃含有銀電糊40地，塗佈銀電糊42之狀態，進行乾燥。
在此，乾燥後之玻璃含有銀電糊40之厚度t1與銀電糊42之厚度t2的比t1/t2則作為0.2以上5.0以下之範圍內者為佳。
(燒成工程S105)
接著，在層積玻璃含有銀電糊40及銀電糊42之狀態，裝入至加熱爐171，172內而進行加熱處理，進行玻璃含有銀電糊40及銀電糊42之燒成。然而，此時之燒成溫度係例如，加以設定為350℃~645℃。
經由此燒成工程S105，而加以形成具備玻璃層與銀層之第1銀基材層130a，第2銀基材層130b，第3銀基材層130c。
另外，第1銀基材層130a，第2銀基材層130b，第3銀基材層130c之中，在銀層側表面的空隙的面積率則作為25%以下。
由如此作為，加以製造本實施形態之附有銀 基材層之功率模組用基板150之同時，加以製造形成有第3銀基材層130c之散熱片161。
(接合材塗佈工程S106)。
接著，於第1銀基材層130a表面，作為成為第1接合層102之接合材，塗佈含有銀及氧化銀之一方或雙方與有機物之接合材45之同時，於第2銀基材層130b表面，作為成為第2接合層105之接合材，塗佈含有銀及氧化銀之一方或雙方與有機物之接合材45。然而，在本實施形態中，作為接合材而使用氧化銀電糊。
(散熱片接合工程S107及半導體元件接合工程S108)
接著，在塗佈接合材(氧化銀電糊)45之狀態，進行乾燥(例如，在室溫，大氣環境進行24小時保管)之後，於加以塗佈於第1銀基材層130a之接合材45，層積半導體元件103之同時，於加以塗佈於第2銀基材層130b之接合材45，層積散熱片161。此時，加以形成於散熱片161之第3銀基材層130c則呈朝向接合材45側地進行配置。
並且，在層積半導體元件103與絕緣電路基板110與散熱片161之狀態，裝入加熱爐173內，進行接合材(氧化銀電糊)45之燒成。此時，經由在加壓半導體元件103與絕緣電路基板110與散熱片161於層積方向之狀態進行加熱之時，可更確實地進行接合者。此情況， 加壓壓力係作為0.5~10MPa者為佳。
由如此作為，加以接合半導體元件103與電路層112之同時，加以接合金屬層113與散熱片161，而加以製造本實施形態之半導體裝置101及附有散熱片之功率模組用基板160。
如根據作為如上述構成之第2實施形態之半導體裝置101及附有銀基材層之功率模組用基板150，可得到與第1實施形態同樣的效果者。
另外，如根據本實施形態之附有散熱片之功率模組用基板160時，因於金屬層113表面形成第2銀基材層130b，於散熱片161之接合面形成第3銀基材層130c，而於此等第2，第3銀基材層130b，130c之間，形成氧化銀電糊之燒成體所成之第2接合層105之故，可確實地接合金屬層113與散熱片161者。
並且，因第2銀基材層130b及第3銀基材層130c之中，在銀層側之表面的空隙之面積率則作為25%以下之故，可抑制在高溫環境下之使用時，將存在於第2銀基材層130b及第3銀基材層130c之銀層側表面的空隙作為起點而產生斷裂於接合層105之情況。因而，即使在高溫環境下使用的情況，亦可成為確保金屬層113與散熱片161等之接合信賴性者。
以上，對於本發明之實施形態已做過說明，但本發明係未加以限定於此等，而在不脫離其發明之技術思想範圍，可作適宜變更。
例如，作為將構成電路層之金屬板做成純度99.99mass%之純鋁(4N鋁)之延壓板，或者無氧銅之延壓板者加以說明過，但並無加以限定於此，而亦可作為以其他的鋁或鋁合金，銅或銅合金而加以構成者。更且，將銅板與鋁板做成固相擴散接合之構造者亦可。
另外，作為絕緣層而使用AlN所成之陶瓷基板者加以說明過，但並非限定於此者，亦可使用Si3N4或Al2O3等所成之陶瓷基板，而亦可經由絕緣樹脂而構成絕緣層。
另外，散熱片係並非限定於在本實施形態所例示之構成者，而對於散熱片的構造未特別有限定。
更且，對於散熱片與金屬層之間，設置緩衝層亦可。作為緩衝層，係可使用鋁或鋁合金，或是包含鋁之複合材(例如，AlSiC等)所成之板材者。
另外，在本實施形態中，作為半導體裝置，舉例說明過加以搭載有功率半導體元件之功率模組，但並不限定於此等，而如為於導電性材料所成之電路層上，加以搭載半導體元件之半導體裝置即可。
例如，如圖9所示，亦可為搭載LED元件(半導體元件)之LED裝置(半導體裝置)。
圖9所示之LED裝置201係具備：LED元件203，和導電性材料所成之電路層212。然而，LED元件203係經由銲接線207而與電路層212加以電性連接，作為經由封閉材208而加以封閉LED元件203及銲接線207 之構造。對於電路層212之一方的面，係加以設置玻璃含有銀電糊與銀電糊之燒成體所成之銀基材層230，而對於LED元件203之背面，係加以設置導電性反射膜216及保護膜215。並且，作為LED元件203則於銀基材層230上，藉由含有銀及氧化銀之一方或雙方與有機物之接合材的燒成體所成之接合層202而加以接合之構造。
在如此之LED裝置201中，因於電路層212之一方的面加以形成銀基材層230，在此銀基材層230之銀層側表面(即，與LED元件203之接合面)的空隙之面積率作為25%以下之故，即使在高溫環境下使用之情況，亦可抑制因存在於銀層側表面的空隙而產生斷裂於接合層者。因而，在高溫環境下，亦對於電路層212與LED元件203之接合信賴性優越。
〔實施例〕
對於為了確認本發明之有效性而進行之確認實驗加以說明。
於陶瓷基板之一方的面及另一方的面，接合金屬板而形成電路層及金屬層。在此，陶瓷基板係作為AlN，而尺寸係作為27mm×17mm×0.6mm。成為電路層及金屬層之金屬板係作為表1所示之材質，尺寸係作為25mm×15mm×0.3mm。
然而，對於金屬板為鋁板之情況，係作為接合材而使用無鉛之Al-Si系焊接填料金屬。另外，對於金屬板為銅 板之情況，係作為接合材而使用無鉛之活性金屬焊接填料材(Ag-Cu-Ti焊接填料材)。
在本發明例中，於電路層之表面，塗佈在實施形態所說明之玻璃含有銀電糊而以150℃進行30分中乾燥之後，塗佈銀電糊而以150℃進行30分中乾燥，經由之後以550℃進行30分中加熱處理之時，形成銀基材層。
然而，作為玻璃含有銀電糊之玻璃粉末，使用包含90.6質量%之Bi2O3，2.6質量%之ZnO，6.8質量%之B2O3的無鉛玻璃粉末。另外，作為樹脂而使用乙基纖維，而作為溶劑而使用二乙二醇二甲醚。更且，添加二羧酸系之分散劑。銀粉末係使用粒徑0.8μm之粉末。
另外，作為銀電糊係使用自上述玻璃含有銀電糊除去玻璃粉末之構成。
然而，玻璃含有銀電糊之塗佈量及銀電糊之塗佈量係如表1記載。
如以上作為，得到本發明例之附有銀基材層之功率模組用基板。
並且，於本發明例之附有銀基材層之功率模組用基板的銀基材層上，塗佈氧化銀電糊(塗佈厚度：10μm)之後，配置半導體元件，由燒成氧化銀電糊者而形成接合層，製作本發明例之半導體裝置。
在此，氧化銀電糊之燒成條件係作成氮素環境，燒成溫度300℃，燒成時間10分中，加壓壓力5MPa。
另外，作為氧化銀電糊，使用市售之氧化銀粉末(日本和光純藥工業股份有限公司)，和作為還原劑而使用十四醯醇，作為溶劑而使用2,2,4-三甲基-1,3-戊二醇單(2-甲基丙酸)，而使用以氧化銀粉末80質量%、還原劑(十四醯醇)：10質量%、溶劑(2,2,4-三甲基-1,3-戊二醇單(2-甲基丙酸))：以殘留部之比例混合者。
在比較例中，於電路層表面，經由塗佈在實施形態所說明之玻璃含有銀電糊而使其乾燥之後，以550℃進行10分鐘加熱處理之時，形成銀基材層，得到比較例之附有銀基材層之功率模組用基板。
然而，玻璃含有銀電糊的塗佈量係作為如表1記載。
並且，於比較例之附有銀基材層之功率模組用基板的銀基材層上，塗佈氧化銀電糊(塗佈厚度：10μm)之後，配置半導體元件，由以與本發明例同樣的條件而燒成氧化銀電糊者而形成接合層，製作比較例之半導體裝置。
(在銀基材層之銀層側表面之空隙的面積率)。
在本發明例及比較例中，經由雷射顯微鏡(股份有限公司KEYENCE製VKX-200)而觀察所形成之銀基材層之銀層側表面，由雷射顯微鏡附屬的軟件，將所得到畫像進行2值化處理，將黑色部判定為空隙而由以下的式而求取空隙的面積率。
空隙之面積率(%)=(黑色部(空隙)面積/銀基材層全體 的面積)×100
然而，圖10顯示在本發明例及比較例之銀基材層之銀層側表面的雷射顯微鏡觀察照片。圖10(a-1)為比較例1之觀察照片，(a-2)則為(a-1)之2值化處理後之畫像，圖10(b-1)則為本發明例3之觀察照片，(b-2)則為(b-1)之2值化處理後之畫像。
(冷熱循環前後的接合率)
對於上述之本發明例及比較例之半導體裝置，使用超音波探傷裝置，自以下式而求取半導體元件與電路層之接合率。在此，初期接合面積係指作為在接合前之欲接合的面積，即半導體元件面積。在超音波探傷像中，剝離係以接合部內之白色部所顯示之情況，將此白色部的面積做成剝離面積。
(接合率)={(初期接合面積)-(剝離面積)}/(初期接合面積)×100
然而，對於半導體裝置，以氣相進行冷熱循環試驗，比較初期之接合率與冷熱循環試驗後之接合率。冷熱循環試驗係作成-40℃×15分←→200℃×15分、3000循環。將其評估結果示於表1。
Figure TW201800239AD00001
在銀基材層之銀層側表面的空隙之面積率超過25%之比較例中，冷熱循環後之接合率則大幅降低。在負荷到達200℃之高溫的冷熱循環時，加以推測於氧化銀電糊之燒成體所成之接合層，產生有將銀基材層表面之空隙作為起點之斷裂之故。
對此，在銀基材層之銀層側表面之空隙的面積率作為25%以下之本發明例中，在冷熱循環後，接合率則亦未產生大的變化。
從以上的情況，如根據本發明例，即使在比較高溫環境下所使用之情況，亦可抑制在接合層之斷裂的進展，而可提供可堅固地與被接合體接合之附有銀基材層之金屬構件者。
1‧‧‧功率模組(半導體裝置)
2‧‧‧接合層
3‧‧‧半導體元件
10‧‧‧功率模組用基板(絕緣電路基板)
11‧‧‧陶瓷基板(絕緣層)
12‧‧‧電路層
30‧‧‧銀基材層
31‧‧‧玻璃層
32‧‧‧銀層
50‧‧‧附有銀基材層之功率模組用基板(附有銀基材層之絕緣電路基板)

Claims (6)

  1. 一種附有銀基材層之金屬構件係具備與被接合體加以接合之金屬構件，和加以形成於此金屬構件的與前述被接合體之接合面的銀基材層之附有銀基材層之金屬構件，其特徵為前述銀基材層係由加以形成於前述金屬構件側的玻璃層，和加以層積形成於此玻璃層之銀層所成，在前述銀基材層之前述銀層側表面的空隙的面積率則作為25%以下者。
  2. 一種附有銀基材層之絕緣電路基板係具備：絕緣層，和加以配設於此絕緣層之一方的面之電路層，和加以形成於前述電路層之中，與前述絕緣層相反側的面之銀基材層之附有銀基材層之絕緣電路基板，其特徵為前述電路層及前述銀基材層則作為如申請專利範圍第1項記載之附有銀基材層之金屬構件，在前述銀基材層之前述銀層側表面的空隙的面積率則作為25%以下者。
  3. 一種附有銀基材層之絕緣電路基板係具備：絕緣層，和加以配設於此絕緣層之一方的面之電路層，和加以配設於前述絕緣層之另一方的面之金屬層，和加以形成於前述金屬層之中，與前述絕緣層相反側的面之銀基材層之附有銀基材層之絕緣電路基板，其特徵為前述電路層及前述銀基材層則作為如申請專利範圍第1項記載之附有銀基材層之金屬構件， 在前述銀基材層之前述銀層側表面的空隙的面積率則作為25%以下者。
  4. 一種半導體裝置係具備如申請專利範圍第2項記載之附有銀基材層之絕緣電路基板，和加以接合於前述電路層之前述銀基材層之半導體元件的半導體裝置，其特徵為前述半導體元件與前述銀基材層係藉由包含銀及氧化銀之一方或雙方與有機物之接合材的燒成體所成之接合層而加以接合者。
  5. 一種附有散熱片之絕緣電路基板係具備如申請專利範圍第3項記載之附有銀基材層之絕緣電路基板，和加以接合於前述金屬層之前述銀基材層之散熱片之附有散熱片之絕緣電路基板，其特徵為前述散熱片與前述銀基材層係藉由包含銀及氧化銀之一方或雙方與有機物之接合材的燒成體所成之接合層而加以接合者。
  6. 一種附有銀基材層之金屬構件之製造方法係如申請專利範圍第1項記載之附有銀基材層之金屬構件的製造方法，其特徵為具備：於前述金屬構件之中加以接合前述被接合體之接合面，塗佈含有玻璃成分之玻璃含有銀電糊之玻璃含有銀電糊塗佈工程，和使所塗佈之玻璃含有銀電糊加以乾燥之第1乾燥工程， 和於乾燥後之前述玻璃含有銀電糊上，塗佈銀電糊之銀電糊塗佈工程，和使所塗佈之銀電糊加以乾燥之第2乾燥工程，和燒成乾燥後之前述玻璃含有銀電糊及前述銀電糊，再形成具有玻璃層及銀層之銀基材層之同時，將在前述銀基材層之前述銀層側表面的空隙之面積率作為25%以下之燒成工程者。
TW106103324A 2016-02-01 2017-01-26 附有銀基材層之金屬構件、附有銀基材層之絕緣電路基板、半導體裝置、附有散熱片之絕緣電路基板及附有銀基材層之金屬構件之製造方法 TWI726048B (zh)

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