TW201642469A - Semiconductor device structure - Google Patents
Semiconductor device structureInfo
- Publication number
- TW201642469A TW201642469A TW105111609A TW105111609A TW201642469A TW 201642469 A TW201642469 A TW 201642469A TW 105111609 A TW105111609 A TW 105111609A TW 105111609 A TW105111609 A TW 105111609A TW 201642469 A TW201642469 A TW 201642469A
- Authority
- TW
- Taiwan
- Prior art keywords
- contact
- active region
- dummy gate
- gate structure
- semiconductor device
- Prior art date
Links
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
A semiconductor device structure includes a semiconductor substrate with an active region provided therein, a gate structure, a dummy gate structure and two contact regions provided in the active region for forming source and drain regions. The gate structure and the dummy gate structure are formed on the semiconductor substrate so as to partially overlie the active region, and one of the contact regions is located at one side of the dummy gate structure. The semiconductor device structure includes a contact structure contacting one of the contact regions and the dummy gate for connecting this contact region and the dummy gate to one of a Vdd rail and a Vss rail. The active region has an extension portion protruding laterally away from the active region relative to the other contact region, where the contact structure is located over the extension portion.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US2014111728A | 2014-05-29 | 2014-05-29 | |
| US14/719,424 | 2015-05-22 | ||
| US14/719,424 US9613181B2 (en) | 2014-05-29 | 2015-05-22 | Semiconductor device structure including active region having an extension portion |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201642469A true TW201642469A (en) | 2016-12-01 |
| TWI629792B TWI629792B (en) | 2018-07-11 |
Family
ID=58265614
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW105111609A TWI629792B (en) | 2014-05-29 | 2016-04-14 | Semiconductor device structure |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TWI629792B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI671902B (en) * | 2017-05-26 | 2019-09-11 | 台灣積體電路製造股份有限公司 | Integrated circuit and method of fabricating and forming same |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100628247B1 (en) * | 2005-09-13 | 2006-09-27 | 동부일렉트로닉스 주식회사 | A semiconductor device |
-
2016
- 2016-04-14 TW TW105111609A patent/TWI629792B/en not_active IP Right Cessation
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI671902B (en) * | 2017-05-26 | 2019-09-11 | 台灣積體電路製造股份有限公司 | Integrated circuit and method of fabricating and forming same |
| US10489548B2 (en) | 2017-05-26 | 2019-11-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuit and method for manufacturing the same |
| US11062075B2 (en) | 2017-05-26 | 2021-07-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuit and method for manufacturing same |
| US11138361B2 (en) | 2017-05-26 | 2021-10-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuit and system of manufacturing the same |
| US11775724B2 (en) | 2017-05-26 | 2023-10-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuit and method of manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI629792B (en) | 2018-07-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |