TW201639241A - 突波保護式同軸接頭 - Google Patents
突波保護式同軸接頭 Download PDFInfo
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- TW201639241A TW201639241A TW105104998A TW105104998A TW201639241A TW 201639241 A TW201639241 A TW 201639241A TW 105104998 A TW105104998 A TW 105104998A TW 105104998 A TW105104998 A TW 105104998A TW 201639241 A TW201639241 A TW 201639241A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/24—Terminating devices
- H01P1/26—Dissipative terminations
- H01P1/266—Coaxial terminations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R24/00—Two-part coupling devices, or either of their cooperating parts, characterised by their overall structure
- H01R24/38—Two-part coupling devices, or either of their cooperating parts, characterised by their overall structure having concentrically or coaxially arranged contacts
- H01R24/40—Two-part coupling devices, or either of their cooperating parts, characterised by their overall structure having concentrically or coaxially arranged contacts specially adapted for high frequency
- H01R24/42—Two-part coupling devices, or either of their cooperating parts, characterised by their overall structure having concentrically or coaxially arranged contacts specially adapted for high frequency comprising impedance matching means or electrical components, e.g. filters or switches
- H01R24/48—Two-part coupling devices, or either of their cooperating parts, characterised by their overall structure having concentrically or coaxially arranged contacts specially adapted for high frequency comprising impedance matching means or electrical components, e.g. filters or switches comprising protection devices, e.g. overvoltage protection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01T—SPARK GAPS; OVERVOLTAGE ARRESTERS USING SPARK GAPS; SPARKING PLUGS; CORONA DEVICES; GENERATING IONS TO BE INTRODUCED INTO NON-ENCLOSED GASES
- H01T4/00—Overvoltage arresters using spark gaps
- H01T4/08—Overvoltage arresters using spark gaps structurally associated with protected apparatus
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01T—SPARK GAPS; OVERVOLTAGE ARRESTERS USING SPARK GAPS; SPARKING PLUGS; CORONA DEVICES; GENERATING IONS TO BE INTRODUCED INTO NON-ENCLOSED GASES
- H01T4/00—Overvoltage arresters using spark gaps
- H01T4/10—Overvoltage arresters using spark gaps having a single gap or a plurality of gaps in parallel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R2103/00—Two poles
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- Coupling Device And Connection With Printed Circuit (AREA)
Abstract
一突波保護式同軸接頭包含一金屬外主體、延伸通過該外主體中心內孔的一中心導體,以及建立於其之間用以將高電壓電力突波放電的火花隙。複數個介電絕緣體於該火花隙相對側上環繞該中心導體。高阻抗電感區域環繞該火花隙以形成一種T網路低通濾波器,其抵銷該火花隙的額外電容。一中心導體的放大部分減輕電弧的有害效果。一軸向、碳成分電阻係設置於該外主體內側以及該介電絕緣體內側,以吸收射頻(RF)訊號,並避免其反射。
Description
本發明申請案主張於2015年7月9日申請之美國專利案號14/795,367以及於2015年2月20日申請之美國專利案號62/118,684的優先權,兩案內容於此以參考方式將其整體整合。
本揭示發明概與同軸接頭有關,其用於終止適於接收同軸電纜連接器的端口,而更特別的,與一種改良式同軸接頭有關,其提供對於重複高電壓突波的強化保護。
射頻(RF)同軸電纜系統係在電纜電視產業中使用,以將射頻訊號分配至電纜電視服務的用戶,而最近,也分配至語音與資料電信服務的用戶。用以發送所述訊號的同軸電纜包含用於傳輸射頻訊號的中心導體,以及一環繞接地外側傳導編帶或護套。一般而言,同軸電纜包含環繞該中心導體的介電材料,並將該介電材料與該接地外側護套間隔開。該中心導體的直徑以及該外側導體的直徑以及介電形式係經選擇以在該同軸線中產生特性阻抗,像是75歐姆。此相同的同軸電續有時
候也用於提供交流電力(一般而言為60至90Vrms(有效電壓))至需要外部電力進行作用的設備盒。
在所述同軸電纜系統中,所述同軸現一般而言係於其端部連接至設備盒,像是訊號分裂器、放大器等等。這些設備盒時常具有許多適於接收同軸電纜端部連接器的內螺紋同軸端口。如果所述同軸端口的一或多個係被剩餘為「開啟」,亦即一同軸電纜並不被固定至所述端口時,那麼必須利用一同軸接頭「終止」所述端口,該同軸接頭與該同軸線的特性阻抗相符(例如,75歐姆的接頭)。如果所述同軸接頭被省略,那麼不期望的反射訊號將干擾所希望射頻訊號的正常傳輸。
當配置於該領域中,像是配置於電纜電視系統中,舉例而言,這些已知的同軸接頭裝置可能遭受到因雷擊或其他事件造成的電力突波。這些電力突波可能傷害或摧毀在所述接頭中的電阻及/或電容元件,使其無法作用。
一種較舊制訂的突波測試ANSI C62.41 Category B3規定將6,000伏特開放電路/3,000安培短路突波脈衝注入至該同軸接頭裝置之中。至少某些已知的同軸接頭裝置在符合所述突波測試上具有困難。的確,努力使電子及電容元件變大,以抵抗所述電力突波,可能在成本增加及/或建立較大的阻抗不匹配上具有負面影響,而因此造成射頻回波損耗效能的較差水平。一種設計能夠抵抗前述6,000伏特突波之接頭的解決方
式,係使用一種6,000伏特電容與高電阻。不幸的是,所述元件相對昂貴,並具有更大的物理尺寸,其可能增加需要用來容納所述元件之外殼的尺寸與成本,因此造成一種更笨重與更昂貴的設計。在最近,已經由該產業引入較新的突波測試(ANSI/SCTE 81 2012),其需要如以下第1表總結的不同測試曲線。像是與美國專利6,751,081(Kooiman)的較舊設計在經受此較新突波測試曲線之後顯現出嚴重的回波損耗退化。
簡短敘述以及根據所提供的各種具體實施例,本揭示發明與一種突波保護式同軸接頭有關,其包含具有一中心內孔延伸穿過於其中的一金屬外主體、延伸通過該外主體中心內孔之中的一中心導體,以及建立於所述同軸接頭內的火花隙,用以將高電壓電力突波跨及該火花隙放電而不會傷害可能也被包含在所述同軸接頭中的其他元件(例如,電阻及/或電容元件)。
在一具體實施例中,提供一種突波保護式同軸接頭。該突波保護式同軸接頭包含一金屬外主體,該金屬外主體具有延伸穿過其中一中心內孔,該中心內孔於該金屬外主體第一與第二端之間沿著一縱向軸延伸穿過其中。該中心內孔係由一內壁所限定,該內壁具有延伸至該中心內孔之中的一方向朝內徑向台階部分。該內壁與徑向台階一起定義:該中心內孔的一第一部份,設置於該徑向台階的一第一側上,該中心內孔的一第二孔
口部份,通常設置在該徑向台階處,及該中心內孔的一第三部份,設置於該徑向台階的一第二相對側上。一中心導體延伸至該金屬外主體的中心內孔之中,並延伸至該中心內孔的第一、第二與第三部分的每一者之中。該中心導體進一步包含至少部分設置於該中心內孔第一部份內的一第一圓柱部分,至少部分設置於該中心內孔第二孔口部份內,靠近於該主體的徑向台階,以於其之間形成一火花隙的一第二中心部分,以及至少部分設置於該中心內孔第三部份內的一第三圓柱部分。該中心導體的第三向後圓柱部分係由該絕緣體層至少部分環繞。空氣則設置於該主體徑向台階及該中心導體第二中心部份之間所形成之火花隙之至少一部分內。
在另一具體實施例中,提供一種突波保護式同軸接頭。該突波保護式同軸接頭包含一金屬外主體,該金屬外主體具有延伸穿過其中一中心內孔,該中心內孔於該金屬外主體第一與第二端之間沿著一縱向軸延伸穿過其中。該中心內孔係由一內壁所限定,該內壁具有延伸至該中心內孔之中的一方向朝內徑向台階部分。該內壁與徑向台階一起定義:該中心內孔的一第一部份,設置於該徑向台階的一第一側上,以及該中心內孔的一第二孔口部份,通常設置在該徑向台階處。一中心導體延伸至該金屬外主體的中心內孔之中,並延伸至該中心內孔的第一與第二部分的每一者之中。該中心導體包含至少部分設置於該中心內孔第一部份內的一第一圓柱部
分,至少部分設置於該中心內孔第二孔口部份內,靠近於該主體的徑向台階,以於其之間形成一火花隙的一第二放大中心部分。該中心導體的第二放大中心部分具有一軸向長度與一直徑。該軸向長度相對於第二放大中心部分之直徑的比例在某些具體實施例中,係介於從大約0.3對1至大約1.3對1的範圍。空氣則設置於該主體徑向台階及該中心導體第二放大中心部份之間所形成之火花隙之至少一部分內。
其他的特徵和優點將在以下詳細描述中闡述,從該敘述或由實施在此描述之具體實施例,包含以下的詳細敘述、申請專利範圍以及該等附加圖式的方式,其部分對於本領域技術人員而言係為顯而易見。
要瞭解的是,前述一般敘述與以下詳細敘述兩者僅為示例,並預期提供瞭解該申請專利範圍之本質與特徵的概觀或架構。包含該等伴隨圖式以提供一進一步瞭解,且其被整合於此申請書之中並構成此申請書的一部分。該等圖式描繪一或多個具體實施例,並與該敘述一起說明各種具體實施例的原則與操作。
10‧‧‧突波保護式同軸接頭
20‧‧‧突波保護式同軸接頭
30‧‧‧突波保護式同軸接頭
40‧‧‧突波保護式同軸接頭
100‧‧‧接頭
100'‧‧‧接頭
100"‧‧‧接頭
101‧‧‧圓柱部分
101'‧‧‧圓柱部分
101"‧‧‧圓柱部分
102‧‧‧放大部分
102'‧‧‧放大部分
102"‧‧‧放大部分
103‧‧‧圓柱部分
103'‧‧‧圓柱部分
103"‧‧‧圓柱部分
104‧‧‧凸脊
200‧‧‧金屬外主體
200'‧‧‧金屬外主體
200"‧‧‧金屬外主體
201‧‧‧孔口
201'‧‧‧孔口
202‧‧‧倒角
202'‧‧‧倒角
202"‧‧‧倒角
203‧‧‧倒角
204‧‧‧倒角
206‧‧‧表面
210‧‧‧主體內孔
224‧‧‧中心內孔
224'‧‧‧中心內孔
226‧‧‧縱向軸
226'‧‧‧縱向軸
228‧‧‧第一端
228'‧‧‧第一端
229‧‧‧外部安裝螺紋
229'‧‧‧外部安裝螺紋
230‧‧‧第二端
230'‧‧‧第二端
231‧‧‧平滑外圓柱表面
231'‧‧‧平滑外圓柱表面
232‧‧‧內壁
232'‧‧‧內壁
233‧‧‧O環
233'‧‧‧O環
234‧‧‧台階
234'‧‧‧台階
234"‧‧‧台階
235‧‧‧O環
235'‧‧‧O環
239‧‧‧內孔
239'‧‧‧內孔
246‧‧‧支撐絕緣體中心內孔
246'‧‧‧支撐絕緣體中心內孔
249‧‧‧中心導體端部內孔
249'‧‧‧中心導體端部內孔
600‧‧‧火花隙區域
600'‧‧‧火花隙區域
600"‧‧‧火花隙區域
601‧‧‧火花隙
601'‧‧‧火花隙
700‧‧‧絕緣體
705‧‧‧絕緣體前端
707‧‧‧絕緣體圓柱部分
709‧‧‧反內孔
710‧‧‧絕緣體通道
1000‧‧‧中心導體接頭
1010‧‧‧圓柱部分
1020‧‧‧放大部分
1030‧‧‧圓柱部分
1500‧‧‧支撐絕緣體
2000‧‧‧金屬外主體
2002‧‧‧倒角
2004‧‧‧台階
2010‧‧‧孔口
2024‧‧‧中心內孔
2026‧‧‧縱向軸
2028‧‧‧第一端
2029‧‧‧外部安裝螺紋
2030‧‧‧第二端
2031‧‧‧平滑外圓柱表面
2032‧‧‧內壁
2033‧‧‧O環
2034‧‧‧台階
2035‧‧‧O環
2039‧‧‧內孔
2046‧‧‧支撐絕緣體中心內孔
2049‧‧‧中心導體端部內孔
2500‧‧‧支撐絕緣體
3000‧‧‧支撐絕緣體
3500‧‧‧電阻器
3502‧‧‧電極
3504‧‧‧電極
4000‧‧‧阻擋電容器
4500‧‧‧接地柱
5000‧‧‧保護蓋
6000‧‧‧火花隙區域
6010‧‧‧火花隙
第1圖示意描繪一示例突波保護式同軸接頭的橫斷面圖;第1A圖示意描繪第1圖之突波保護式同軸接頭的詳細部分橫斷面圖;
第2圖示意描繪根據於此說明及敘述之一或多個具體實施例,一示例突波保護式同軸接頭的橫斷面圖;第2A圖示意描繪根據於此說明及敘述之一或多個具體實施例,第2圖之突波保護式同軸接頭的詳細部分橫斷面圖;第3圖示意描繪根據於此說明及敘述之一或多個具體實施例,另一示例突波保護式同軸接頭的橫斷面圖;第3A圖示意描繪根據於此說明及敘述之一或多個具體實施例,第3圖之突波保護式同軸接頭的詳細部分橫斷面圖;第4圖示意描繪根據於此說明及敘述之一或多個具體實施例,另一示例突波保護式同軸接頭的詳細部分橫斷面圖,其說明一接點的放大部分;第4A圖示意描繪根據於此說明及敘述之一或多個具體實施例,第4圖之突波保護式同軸接頭的詳細部分橫斷面端視圖;第5圖示意描繪根據於此說明及敘述之一或多個具體實施例,安裝至一裝置中之一示例突波保護式同軸接頭的橫斷面圖;第5A圖示意描繪根據於此說明及敘述之一或多個具體實施例,具有一彎曲中心導體之一示例突波保護式同軸接頭的橫斷面圖;
第5B圖示意描繪根據於此說明及敘述之一或多個具體實施例,具有一彎曲中心導體之另一示例突波保護式同軸接頭的橫斷面圖;第6圖示意描繪根據於此說明及敘述之一或多個具體實施例,一示例突波保護式同軸接頭的橫斷面圖,該突波保護式同軸接頭包含在該中心導體中的一溝槽;及第7圖示意描繪根據於此說明及敘述之一或多個具體實施例,另一示例突波保護式同軸接頭的橫斷面圖,該突波保護式同軸接頭包含在該中心導體中的一溝槽,其做為一種機械應變釋放部。
本揭示發明的具體實施例指導一種突波保護式同軸接頭,其包含具有一中心內孔延伸穿過於其中的一金屬外主體、延伸通過該外主體中心內孔之中的一中心導體,以及建立於所述同軸接頭內的火花隙,用以將高電壓電力突波跨及該火花隙放電而不會傷害可能也被包含在所述同軸接頭中的其他元件(例如,電阻及/或電容元件)。
現在參考第1圖,說明一典型突波保護式同軸接頭10的橫斷面圖。該突波保護式同軸接頭10包含一金屬外主體2000。舉例而言,該主體2000可以結合一六角形外輪廓,以在該突波保護式同軸接頭10被拴緊至傳輸線設備盒的同軸端口時,容納扳手的鉗口。該金屬
外主體2000包含一中心內孔2024或中心通道,該中心內孔2024沿著該金屬外主體2000的第一端2028與第二端2030之間的縱向軸2026延伸穿過其中。該中心內孔2024由一內壁2032定義。如第1圖所說明,一方向朝內徑向台階2034從該內壁2032朝向該中心軸2026延伸。該台階2034與該內壁2032剩餘部分的軸長相比之下,其於沿著該中心軸2026的長度是非常短的,在這個意義下該台階2034係為相對短。同樣的,在該台階部分2034內該內壁2032的內徑係明顯小於該內壁2032剩餘部分的內徑。
如第1圖說明,該外主體的第一端2028包含外部安裝螺紋2029,可用於將該突波保護式同軸接頭10牢固至一傳輸線設備盒的未終止同軸端口。該外主體2000的一相對端包含一平滑外圓柱表面2031,以形成一種與一保護蓋5000匹配的壓入配合。如果需要的話,外圓柱表面2031可以形成具有外部螺紋,以與保護蓋5000的內部螺紋匹配。可以使用一對O環2033及2035於該外主體2000以及與該外部安裝螺紋2029及該保護蓋5000螺紋咬合的同軸端口之間形成流體緊密密封。
一中心導體接頭1000延伸通過該外主體2000的中心內孔2024。該中心導體接頭1000係由一第一支撐絕緣體1500支撐於其一端處。該第一支撐絕緣體1500係接著由一放大環形內孔2039支撐,其形成於該外主體2000的第一端2028中。該中心導體接頭1000
從該外主體2000第一端2028朝外突出的部分,可由使用者切除為任何需要的長度。一設備盒的典型同軸端口係包含一種夾鉗機制,以夾緊該中心導體接頭1000並與其建立電連接。
該中心導體接頭1000也由一種介電材料的第二支撐絕緣體2500支撐於其相對端處,其從該中心內孔2024的第二端2030壓入至該中心內孔2024之中。該中心導體接頭1000的外徑可經選擇,因此在沿著其長度的任何位置,在給定環繞介電特性並給定該環繞內壁的直徑下,該中心導體接頭1000的特性阻抗便可以與該同軸電纜系統所需的特性阻抗相符(例如,在75歐姆特性阻抗系統中,具有75歐姆)。
在第1A圖的放大圖中,更詳細說明火花隙區域6000。如第1A圖所指出,該中心導體1000於該內壁2032的徑向台階部分2034內包含一稍微放大的直徑,以促成火花跨及火花隙6010的跳躍。該火花隙6010的尺寸係經選擇以在正常操作電壓及電流下,最高至一特定門檻電壓(舉例而言,1500伏特),有效地將接地徑向台階2034與中心導體1000絕緣。當該中心導體1000與外主體2000之間的突波電壓超過此門檻電壓時,該火花隙6010將被點燃並將任何超額能量傳導至接地。舉例而言,所述不正常的電力突波可能係由雷擊所引起。
該突波保護式同軸接頭10也包含一電阻端接元件,電阻器3500,其連接於該中心導體1000與該
接地外主體2000之間。參考第1圖,軸向電阻器3500被設置於該外主體2000的中心內孔2024內。該電阻器3500被支撐於該支撐絕緣體2500的中心內孔2046內。該電阻器3500的一第一內部電極3502係容納於形成在該中心導體1000端部中的內孔2049內,其位躺於支撐絕緣體2500內。在該中心導體1000與該電阻器3500被插入至該支撐絕緣體2500之前,該電極可被焊接至該中心導體1000。在該電阻器3500的相對端處,一外部焊接電極3504從該支撐絕緣體3000的外表面突出。該電阻器3500的數值係被選擇為與該同軸線的特性阻抗相容(例如,50歐姆、75歐姆等等)。該電阻器3500為吸收射頻訊號以避免反射的元件。該電阻器3500係被較佳地選擇為一種碳成分電阻器,因為所述電阻器提供良好的高頻效能,也具有在突波保護期間當該電容器被交替充電並接著放電時所發生之突波電流的能力。如以上所指出,任何與該同軸線特性阻抗的偏差都可能造成射頻訊號反射;據此,該電阻器3500係被策略性放置於該同軸線結構的中心軸上,而環繞支撐絕緣體2500、3000與該外主體2000的中心內孔2024係經設計以在該電阻器3500任何位置都保持所需要的特性阻抗。
具有所謂「晶片電容器」形式的阻擋電容器4000係於該焊接電極2048與一第二焊接電極4500或接地柱之間徑向延伸,其從形成於外主體2000中的一凹處延伸。該阻擋電容器4000的相對端(電極)係被焊接
至電極2048與接地柱4500,以將中心導體1000與該電阻器3500及該電容器4000串聯電連接,以進行接地(外主體2000),並與火花隙6010平行。提供電容器4000以阻擋直流電或交流電流過電阻器3500。
第1A圖為第1圖突波保護式同軸接頭10的詳細部分橫斷面圖,其包含一火花隙區域6000、一中心導體接頭1000與一主體2000。該中心導體接頭1000包含一第一圓柱部分1010、具有軸向長度為「A」的放大直徑部分1020,以及一第二圓柱部分1030。該主體2000包含一第一倒角2002、一第二倒角2004、一孔口2010與該徑向台階2034。該火花隙區域6000包含一火花隙6010。
該主體2000的徑向台階2034與火花隙6010係靠近於該中心導體1000,相對於射頻場移動所沿著的方向而言,於該傳輸線的特性阻抗中表現一種高度電容不連續性,且與同軸接頭裝置相反,通常會造成射頻能量反射。據此,高特性阻抗感應區域便形成於減小直徑徑向台階2034的兩側上,以建立一種電氣T網路低通濾波器的等價效果。高阻抗感應區域係位於該徑向台階部分2034的相對側上。由高阻抗感應區域引入的額外電感總量則抵銷由減小直徑台階部分2034所造成的額外電容。所述高阻抗感應區域與高電容徑向台階部分2034一起的組合效果,有效地抵銷射頻訊號反射,否則將由於只有徑向台階2034單獨存在而發生。
現在參考第2圖,此橫斷面描述一突波保護式同軸接頭20的示例具體實施例。該突波保護式同軸接頭20包括一金屬外主體200。舉例而言,該主體200可以結合一六角形外輪廓,以在該突波保護式同軸接頭20被拴緊至傳輸線設備盒的同軸端口時,容納扳手的鉗口。該金屬外主體200包含一中心內孔224或中心通道,該中心內孔224沿著該金屬外主體200的第一端228與第二端230之間的縱向軸226延伸穿過其中。該中心內孔224由一內壁232定義。一方向朝內徑向台階234從該內壁232朝向該中心軸226延伸。該台階234與該內壁232剩餘部分的軸長相比之下,其於沿著該中心軸226的長度是非常短的,在這個意義下該台階234係為相對短。同樣的,在該台階部分234內該內壁232的內徑係明顯小於該內壁232剩餘部分的內徑。
該外主體的第一端228包含外部安裝螺紋229,可用於將該突波保護式同軸接頭20牢固至一傳輸線設備盒的未終止同軸端口。該外主體200的一相對端包含一平滑外圓柱表面231,以形成一種與一保護蓋5000匹配的壓入配合。如果需要的話,外圓柱表面231可以形成具有外部螺紋,以與保護蓋5000的內部螺紋匹配。可以使用一對O環233及235於該外主體2000以及與該外部安裝螺紋229及該保護蓋5000螺紋咬合的同軸端口之間形成流體緊密密封。
一中心導體接頭100延伸通過該外主體200的中心內孔224。該中心導體接頭100係由一第一支撐絕緣體1500支撐於其一端處。該第一支撐絕緣體1500係接著由一放大環形內孔239支撐,其形成於該外主體200的第一端228中。該中心導體接頭100從該外主體200第一端228朝外突出的部分,可由使用者切除為任何需要的長度。一設備盒的典型同軸端口係包含一種夾鉗機制,以夾緊該中心導體接頭100並與其建立電連接。
該中心導體接頭100也由一種介電材料的第二支撐絕緣體2500支撐於其相對端處,其從該中心內孔224的第二端230壓入至該中心內孔224之中。該中心導體接頭100的外徑可經選擇,因此在沿著其長度的任何位置,在給定環繞介電特性並給定該環繞內壁的直徑下,該中心導體接頭100的特性阻抗便可以與該同軸電纜系統所需的特性阻抗相符(例如,在75歐姆特性阻抗系統中,具有75歐姆)。
在第2A圖的放大圖中,更詳細說明火花隙區域600。如第2A圖所指出,該中心導體100於該內壁232的徑向台階部分234內包含一稍微放大的直徑,以促成火花跨及火花隙601的跳躍。該火花隙601的尺寸係經選擇以在正常操作電壓及電流下,最高至一特定門檻電壓(舉例而言,1500伏特),有效地將接地徑向台階234與中心導體100絕緣。當該中心導體100與外主體200之間的突波電壓超過此門檻電壓時,該火花隙601將被
點燃並將任何超額能量傳導至接地。舉例而言,所述不正常的電力突波可能係由雷擊所引起。
該突波保護式同軸接頭20也包含一電阻端接元件,電阻器3500,其連接於該中心導體100與該接地外主體200之間。參考第2圖,軸向電阻器3500被設置於該外主體200的中心內孔224內。該電阻器3500被支撐於該支撐絕緣體2500的中心內孔246內。該電阻器3500的一第一內部電極3502係容納於形成在該中心導體100端部中的內孔249內,其位躺於支撐絕緣體2500內。在該中心導體100與該電阻器3500被插入至該支撐絕緣體2500之前,該電極3502可被焊接至該中心導體100。在該電阻器3500的相對端處,一外部焊接電極3504從該支撐絕緣體3000的外表面突出。該電阻器3500的數值係被選擇為與該同軸線的特性阻抗相容(例如,50歐姆、75歐姆等等)。該電阻器3500為吸收射頻訊號以避免反射的元件。該電阻器3500係被較佳地選擇為一種碳成分電阻器,因為所述電阻器提供良好的高頻效能,也具有在突波保護期間當該電容器被交替充電並接著放電時所發生之突波電流的能力。如以上所指出,任何與該同軸線特性阻抗的偏差都可能造成射頻訊號反射;據此,該電阻器3500係被策略性放置於該同軸線結構的中心軸上,而環繞支撐絕緣體2500、3000與該外主體200的中心內孔224係經設計以在該電阻器3500任何位置都保持所需要的特性阻抗。
具有所謂「晶片電容器」形式的阻擋電容器4000係於該焊接電極3504與一第二焊接電極4500或接地柱之間徑向延伸,其從形成於外主體200中的一凹處延伸。該阻擋電容器4000的相對端(電極)係被焊接至電極3504與接地柱4500,以將中心導體100與該電阻器3500及該電容器4000串聯電連接,以進行接地(外主體200),並與火花隙601平行。提供電容器4000以阻擋直流電或交流電流過電阻器3500。
第2A圖為第2圖突波保護式同軸接頭20的詳細部分橫斷面圖。在此具體實施例中,該突波保護式同軸接頭20包含一中心導體接頭100、一主體200、一火花隙區域600與一絕緣體700。該中心導體接頭100包含一第一向前圓柱部分101、具有軸向長度為「B」的第二放大中心部分102,以及一第三向後圓柱部分103。該第二放大中心部分102一般設置於該火花隙601處,相鄰從該主體200內壁232延伸的方向朝內台階234。
該主體200也包含一孔口201、設置在該徑向台階一徑向向內部分處,與該中心導體接頭第二放大中心部分102相鄰,並一般而言位於該火花隙區域火花隙601處的一第一向前倒角202、一第二倒角204與沿著該徑向台階234一向後側形成,並一般而言相鄰於該火花隙601的表面206。該表面206與該主體200徑向台階的第二面向後倒角也支撐該絕緣體700的一前端
705。一圓柱部分707在向後的方向中,從該火花隙601、該主體的徑向台階與該中心導體接頭100的第二放大中心部分102於該主體一內孔210內延伸。該絕緣體700的圓柱部分707也環繞並因此將從該火花隙601、該主體徑向台階與該中心導體接頭100第二放大中心部分102朝外延伸之該內孔210內,於一向後方向中延伸之該絕緣體700一通道710內的第三向後圓柱部分103絕緣。該絕緣體700進一步包括設置在該前端705的一反內孔709,並適於容納及支撐相鄰該火花隙該中心導體接頭100的第二放大部分102。
在該突波保護式同軸接頭20中抵抗電力突波的能力,係透過與第1A圖說明長度A相比下相對增加的長度B加以強化。當電弧在該放大部分102與該孔口201之間跳躍時,該放大部分102的表面係被侵蝕(eroded)。當該放大部分102的表面係被侵蝕時,將電力分流至接地的能力便降低,而回波損耗便受到某些負面影響。增大放大部分102表面區域能夠在將電力分流至接地的能力受到影響之前提供較長的時間,藉此甚至在之前提到新規範所需要的多數電力突波之後,能增加該回波損耗效能保持穩定的時間長度。此外,該絕緣體700提供將該接頭100改良中心定位於該孔口201內,並保護避免該放大部分102的破裂。對該絕緣體700電阻抗的效果係以一種稱做為「調整」該突波保護式同軸接頭20射頻結構以產生所需要回波損耗效能,藉由延
長該主體200內孔210的方式抵銷。測試時,與從原始狀態至該第一電弧相比之下的回波損耗改變,係被認為相對較小(大約2分貝的大小),並在之後的測試期間保持相對穩定。
現在參考第3圖,描述一突波保護式同軸接頭30另一具體實施例的橫斷面圖。該突波保護式同軸接頭30包括一金屬外主體200’。該金屬外主體200’包含一中心內孔224’或中心通道,該中心內孔224’沿著該金屬外主體200’的第一端228’與第二端230’之間的縱向軸226’延伸穿過其中。該中心內孔224’由一內壁232’定義。一方向朝內徑向台階234’從該內壁232’朝向該中心軸226’延伸。該台階234’與該內壁232’剩餘部分的軸長相比之下,其於沿著該中心軸226’的長度是非常短的,在這個意義下該台階234’係為相對短。同樣的,在該台階部分234’內該內壁232’的內徑係明顯小於該內壁232’剩餘部分的內徑。
一中心導體接頭100’延伸通過該外主體200’的中心內孔224’。該中心導體接頭100’係由一第一支撐絕緣體1500支撐於其一端處。該第一支撐絕緣體1500係接著由一放大環形內孔239’支撐,其形成於該外主體200’的第一端228’中。該中心導體接頭100’從該外主體200’第一端228’朝外突出的部分,可由使用者切除為任何需要的長度。一設備盒的典型同軸端口係
包含一種夾鉗機制,以夾緊該中心導體接頭100’並與其建立電連接。
該中心導體接頭100’也由一種介電材料的第二支撐絕緣體2500支撐於其相對端處,其從該中心內孔224’的第二端230’壓入至該中心內孔224’之中。該中心導體接頭100’的外徑可經選擇,因此在沿著其長度的任何位置,在給定環繞介電特性並給定該環繞內壁的直徑下,該中心導體接頭100’的特性阻抗便可以與該同軸電纜系統所需的特性阻抗相符(例如,在75歐姆特性阻抗系統中,具有75歐姆)。
在第3A圖的放大圖中,更詳細說明火花隙區域600’。如第3A圖所指出,該中心導體100’於該內壁232’的徑向台階部分234’內包含一稍微放大的直徑,以促成火花跨及火花隙601’的跳躍。該火花隙601’的尺寸係經選擇以在正常操作電壓及電流下,最高至一特定門檻電壓(舉例而言,1500伏特),有效地將接地徑向台階234’與中心導體100’絕緣。當該中心導體100’與外主體200’之間的突波電壓超過此門檻電壓時,該火花隙601’將被點燃並將任何超額能量傳導至接地。舉例而言,所述不正常的電力突波可能係由雷擊所引起。
該突波保護式同軸接頭30也包含一電阻端接元件,電阻器3500,其連接於該中心導體100’與該接地外主體200’之間。參考第3圖,軸向電阻器3500被設置於該外主體200’的中心內孔224’內。該電阻器
3500被支撐於該支撐絕緣體2500的中心內孔246’內。該電阻器3500的一第一內部電極3502係容納於形成在該中心導體100’端部中的內孔249’內,其位躺於支撐絕緣體2500內。在該中心導體100’與該電阻器3500被插入至該支撐絕緣體2500之前,該電極3502可被焊接至該中心導體100’。在該電阻器3500的相對端處,一外部焊接電極3504從該支撐絕緣體3000的外表面突出。該電阻器3500的數值係被選擇為與該同軸線的特性阻抗相容(例如,50歐姆、75歐姆等等)。該電阻器3500為吸收射頻訊號以避免反射的元件。該電阻器3500係被較佳地選擇為一種碳成分電阻器,因為所述電阻器提供良好的高頻效能,也具有在突波保護期間當該電容器被交替充電並接著放電時所發生之突波電流的能力。如以上所指出,任何與該同軸線特性阻抗的偏差都可能造成射頻訊號反射;據此,該電阻器3500係被策略性放置於該同軸線結構的中心軸上,而環繞支撐絕緣體2500、3000與該外主體200’的中心內孔224’係經設計以在該電阻器3500任何位置都保持所需要的特性阻抗。
具有所謂「晶片電容器」形式的阻擋電容器4000係於該焊接電極3504與一第二焊接電極4500或接地柱之間徑向延伸,其從形成於外主體200’中的一凹處延伸。該阻擋電容器4000的相對端(電極)係被焊接至電極3504與接地柱4500,以將中心導體100’與該電
阻器3500及該電容器4000串聯電連接,以進行接地(外主體200’),並與火花隙601’平行。提供電容器4000以阻擋直流電或交流電流過電阻器3500。
現在參考第3A圖,一詳細部分橫斷面圖說明第3圖突波保護式同軸接頭30。該突波保護式同軸接頭30包含一火花隙區600’、一接頭100’與一主體200’。該接頭100’包含一圓柱部分101’、一放大部分102’與一圓柱部分103’。該主體200’包含一倒角202’、另一倒角203、一孔口201與一火花隙601’。已經發現到此配置在與第2圖相比下的較常時間期間能夠繼續改良回波損耗效能(顯現出反向退化)。然而,與從原始狀態至該第一電弧相比之下的回波損耗改變,係大於如第2圖中配置所見。
放大部分102’具有軸長「C」與直徑「T」。其尺寸可根據應用而改變。然而,在一特定實作中,該放大部分102’具有從大約0.025”至大約0.06”範圍的軸長「C」,從大約0.05”至大約0.08”範圍的直徑「T」。該放大部分102’也可以具有從大約0.3對1至大約1.3對1的軸長對直徑比例,而在某些具體實施例中,軸長對直徑的比例係從大約0.5對1至1對1,而仍在進一具體實施例中係從大約0.6對1至大約1對1。
現在參考第4圖,一詳細部分橫斷面圖描述一突波保護式同軸接頭之火花隙部分600”的另一具體實施例。該火花隙部分600”包含一接頭100”的放大
部分102”。該放大部分102”與複數個凸脊104外切。在一具體實施例中,該等凸脊104可利用在該產業中像是輥紋法的已知處理形成。該等凸脊104形成複數個電弧點。電弧可在該火花隙最小的區域處集中,並在離開次一輥紋峰的位置處消散中心導體材料,以在次一突波事件期間將電弧放電集中,因此將接頭的壽命延長為多數電弧事件。
第4A圖描繪第4圖具體實施例的詳細部分橫斷面端視圖,其有用於描述外切於該放大部分102”上的該等凸脊104。
現在參考第5圖,第3圖中說明之突波保護式同軸接頭30係被描述為安裝在一裝置700中,像是安裝於一放大器中。在第5圖說明的具體實施例中,該突波保護式同軸接頭30包含透過一固定螺釘705(在第5圖中完全拴緊於接頭100’上)安裝於該裝置700中的一接頭100’。在拴緊該固定螺釘705的極端情況中可能如第5圖說明使該接頭中心導體100’彎曲。
現在參考第5A圖,說明第5圖的突波保護式同軸接頭30。在此實作中,該突波保護式同軸接頭30係為具有如參考第5圖所敘述的彎曲中心導體100’,造成該中心導體100’的變形,因此其在位置「A」處或靠近「A」處與該接頭30的主體200’接觸,形成電短路。
第5B圖再次描繪第2圖中說明的突波保護式同軸接頭20,其具有一彎曲中心導體100。同樣的,如
第5B圖說明該中心導體100的變形造成該中心導體100在位置「A」附近與該主體200接觸,造成電短路。
第6圖說明一突波保護式同軸接頭20的另一具體實施例,其包含一結構特徵ggg,像是溝槽、刻痕或其他類似特徵,提供一機械應變釋放部,以避免如第5B圖中說明沿著該中心導體100移動至位置「A」,而發生在該接頭20外側該中心導體100的變形。
第7圖說明一突波保護式同軸接頭40的又一具體實施例,其包含一結構特徵ggg,像是溝槽、刻痕或其他類似特徵,同樣提供如參考第6圖敘述的機械應變釋放部,以避免如第5B圖中說明移動至位置「A」所發生該中心導體100的變形,並具有一絕緣體hhh,其設置在該火花隙區域前方並與該絕緣體1500與該主體200接合。
現在應該瞭解於此敘述的具體實施例係指導為突波保護式同軸連接器。實際上,於此敘述的突波保護式同軸連接器可以包含環繞相鄰於一火花隙之該中心導體至少一部分的至少一介電層。在其他具體實施例中,該中心導體的一放大部分包含一增加的軸長,設置於該火花隙內。此外,於此敘述的具體實施例促成突波保護式同軸接點的長期機械可靠性。
為敘述與定義本發明主題內容的目的,要注意該用詞「實質上」於此係用於表現固有不確定性程度,其可能歸因於任何定量比較、數值、測量或其他表述。
除非另外明確說明,否則並不以任何方式預期於此所闡述的任何方法需要以特定順序施行其步驟的方式所建構。據此,在一方法請求項並不實際敘述依循其步驟的順序或是另外在請求項或敘述中另外具體陳述將該等步驟以一特定順序所限制的情況下,並不以任何方式預期將其推斷為任何特定順序。
對於該領域技術人員明顯的是,在不背離本發明精神或範圍下,可以進行各種修改與變化。因此該等揭示具體實施例的修改、組合、次組合與變化結合本揭示發明的精神與內容,係可由該領域技術人員加以進行,於此揭示的具體實施例應被建構為包含在該等附加請求項與其等價物範圍內的任何事項。
20‧‧‧突波保護式同軸接頭
100‧‧‧接頭
200‧‧‧金屬外主體
224‧‧‧中心內孔
226‧‧‧縱向軸
228‧‧‧第一端
229‧‧‧外部安裝螺紋
230‧‧‧第二端
231‧‧‧平滑外圓柱表面
232‧‧‧內壁
233‧‧‧O環
234‧‧‧台階
235‧‧‧O環
239‧‧‧內孔
246‧‧‧支撐絕緣體中心內孔
249‧‧‧中心導體端部內孔
600‧‧‧火花隙區域
700‧‧‧絕緣體
1500‧‧‧支撐絕緣體
2500‧‧‧支撐絕緣體
3000‧‧‧支撐絕緣體
3500‧‧‧電阻器
3502‧‧‧電極
3504‧‧‧電極
4000‧‧‧阻擋電容器
4500‧‧‧接地柱
5000‧‧‧保護蓋
Claims (10)
- 一種突波保護式同軸接頭,包括:一金屬外主體,該金屬外主體具有一中心內孔,該中心內孔於該金屬外主體第一與第二端之間沿著一縱向軸延伸穿過其中,該中心內孔係由一內壁所限定,該內壁具有延伸至該中心內孔之中的一方向朝內徑向台階部分,該台階部分與該內壁一起定義:該中心內孔的一第一部份,設置於該徑向台階的一第一側上,該中心內孔的一第二孔口部份,通常設置在該徑向台階處,及該中心內孔的一第三部份,設置於該徑向台階的一第二相對側上;一中心導體,該中心導體延伸至該金屬外主體的中心內孔之中,並延伸至該中心內孔的第一、第二與第三部分的每一者之中,該中心導體包括:一第一圓柱部分,至少部分設置於該中心內孔第一部份內,一第二中心部分,至少部分設置於該中心內孔第二孔口部份內,靠近於該主體的徑向台階,以於其之間形成一火花隙, 一第三圓柱部分,至少部分設置於該中心內孔第三部份內,該中心導體的第三向後圓柱部分係由該絕緣體層至少部分環繞;及空氣則設置於該主體徑向台階及該中心導體第二中心部份之間所形成之火花隙之至少一部分內。
- 如請求項1所述之突波保護式同軸接頭,其中該中心導體之第三相後圓柱部分係設置於該絕緣體的一通道內,該絕緣體之通道係用於該中心內孔第三部份之至少一部分。
- 如請求項1或2之任一者所述之突波保護式同軸接頭,其中該徑向台階包括一面部與一倒角部,其適於接收並支撐該絕緣體層的一縱向端部。
- 如請求項3所述之突波保護式同軸接頭,其中該絕緣體層至少部分地減少該第二中心部分的破裂。
- 如請求項1所述之突波保護式同軸接頭,其中該徑向台階包括相鄰於該火花隙的一倒角部。
- 如請求項1所述之突波保護式同軸接頭,其中該徑向台階之第一部份的第一側係設置於該中心內孔中心部分的前方。
- 如請求項1所述之突波保護式同軸接頭,其中該徑向台階之第一部份的第一側係設置於該中心 內孔中心部分的後方。
- 如請求項1所述之突波保護式同軸接頭,其中該空氣包括一種離子化氣體。
- 如請求項1所述之突波保護式同軸接頭,其中由於該絕緣體層對接頭電阻抗所造成的效果,係透過該主體內孔的延長以調整該接頭射頻結構的方式進行抵銷。
- 如請求項1、2、5至9之任一者所述之突波保護式同軸接頭,其中該中心內孔的第一部份具有一第一內徑與一第一軸向長度,該中心內孔的第二孔口部分也具有一第二內徑與一第二軸向長度,其中該第二軸向長度係明顯短於該第一軸向長度,而其中該第二內徑係明顯小於該第一內徑。
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-
2015
- 2015-07-09 US US14/795,367 patent/US9590287B2/en active Active
-
2016
- 2016-02-19 TW TW105104998A patent/TWI673926B/zh active
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US9590287B2 (en) | 2017-03-07 |
US20160248176A1 (en) | 2016-08-25 |
TWI673926B (zh) | 2019-10-01 |
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