TW201620694A - Imprint method, imprint apparatus, mold, and article manufacturing method - Google Patents

Imprint method, imprint apparatus, mold, and article manufacturing method Download PDF

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TW201620694A
TW201620694A TW104134686A TW104134686A TW201620694A TW 201620694 A TW201620694 A TW 201620694A TW 104134686 A TW104134686 A TW 104134686A TW 104134686 A TW104134686 A TW 104134686A TW 201620694 A TW201620694 A TW 201620694A
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mold
substrate
imprint
shape
resin
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TW104134686A
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TWI627050B (en
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関淳一
沖仲元毅
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佳能股份有限公司
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Abstract

Provided is an imprint method that molds an uncured resin applied to a substrate by a pattern portion formed on a mold and cures the uncured resin so as to form the pattern of the resin cured on the substrate. The imprint method includes a step of releasing the pattern portion from the resin such that two opposed boundaries are brought closer to each other to progress peeling while maintaining a parallel state after curing of the resin based on the assumption that the boundary at which the pattern portion is peeled from the resin is linear.

Description

壓印方法、壓印設備、模具及物品製造方法 Imprint method, imprinting apparatus, mold and article manufacturing method

本發明關於一種壓印方法、壓印設備、模具及物品製造方法。 The present invention relates to an imprint method, an imprint apparatus, a mold, and an article manufacturing method.

微細加工技術係藉由壓印處理在基板上形成壓印材料的圖案,以供使用模具模製施加到基板上的壓印材料。此技術亦稱作“壓印技術”,藉此基板上形成具有幾奈米尺寸的微細圖案(結構)。壓印技術的一範例包括光固化方法。首先,採用光固化方法的壓印設備將作為壓印材料的樹脂(可光固化樹脂)供應到基板上的注料區域中的其中一注料區域上。接著,利用模具模製基板上的光固化樹脂。在為了固化而用光照射光固化樹脂之後,從模具釋放固化的樹脂,由此在基板上形成樹脂圖案。壓印技術不僅僅包括光固化方法,而且還包括熱固化方法,用於利用例如熱以固化樹脂。 The microfabrication technique forms a pattern of an imprint material on a substrate by an imprint process for molding an imprint material applied to the substrate using a mold. This technique is also referred to as "imprint technique" whereby a fine pattern (structure) having a size of a few nanometers is formed on the substrate. An example of an imprint technique includes a photocuring method. First, an imprinting apparatus using a photocuring method supplies a resin (photocurable resin) as an imprint material to one of the shot forming areas on the substrate. Next, the photocurable resin on the substrate is molded using a mold. After the photocurable resin is irradiated with light for curing, the cured resin is released from the mold, thereby forming a resin pattern on the substrate. Imprinting techniques include not only photocuring methods, but also thermal curing methods for curing the resin using, for example, heat.

然而,在此壓印技術中,模具與樹脂直接接觸,這可 能導致從固化樹脂釋放模具(脫模)時發生諸如轉印失敗的圖案缺陷。例如,缺陷的發生通常在製造半導體裝置或類似裝置期間直接影響裝置性能,可接受的缺陷密度是非常嚴格的。 However, in this imprint technique, the mold is in direct contact with the resin, which can A pattern defect such as a transfer failure occurs when the mold is released from the curing resin (release). For example, the occurrence of defects typically directly affects device performance during the manufacture of semiconductor devices or similar devices, and acceptable defect densities are very stringent.

因此,日本專利早期公開No.2011-77529揭露一壓印設備,其藉由在模具釋放時將基板或模具的後表面加壓成凸狀而將應力施加到界面,並且藉由減小模具釋放力以抑制缺陷的產生。日本專利早期公開No.2007-296683揭露一圖案形成方法,其藉由將直線方向與特定範圍內的剝離方向對準以抑制缺陷發生。日本專利早期公開No.2013-207180揭露一壓印方法,其藉由在模具釋放開始時將模具固持件和基板固持件之間的分離速度設定為零,以減少缺陷發生。 Therefore, Japanese Patent Laid-Open No. 2011-77529 discloses an imprint apparatus which applies stress to an interface by pressing a rear surface of a substrate or a mold into a convex shape when the mold is released, and reduces the release of the mold. Force to suppress the generation of defects. Japanese Patent Laid-Open Publication No. 2007-296683 discloses a pattern forming method for suppressing occurrence of defects by aligning a linear direction with a peeling direction within a specific range. Japanese Patent Laid-Open No. 2013-207180 discloses an imprint method which reduces the occurrence of defects by setting the separation speed between the mold holder and the substrate holder to zero at the start of mold release.

關於缺陷抑制技術的發展,近年來已經闡明的是缺陷密度往往在模製區域的中央部分中特別增加。造成這種情況的一個原因是缺陷密度增加的區域是在模具與樹脂接觸,直到模具釋放步驟之後期階段為止的區域,,並且在此區域中剝離進行速度變得非常高,從而導致容易發生超過所需的應力被施加到樹脂圖案或者模具。特別地,在日本專利早期公開No.2011-77529和日本專利早期公開No.2013-207180揭露的技術中,其亦設想到在模具釋放時剝離各向同性地(概呈圓形)從模製區域的外周部分朝中央部分進行,並且剝離進行速度隨著剝離邊界長度的減小而增大,從而導致在中央區域中經常發生缺陷。另一方 面,在日本專利早期公開No.2007-296683中所揭露技術的應用範圍局限於定向圖案並且尚不清楚該技術是否可以抑制模製區域的中央部分中的缺陷出現。另外,在在日本專利早期公開No.2013-207180揭露的技術中,藉由從模具或基板的彈性變形產生的彈簧力執行模具釋放開始之後的模具釋放操作,根據模具釋放力較大的情況、模具結構、或類似者,直到完成模具釋放操作才開始剝離。 With regard to the development of defect suppression technology, it has been clarified in recent years that the defect density tends to increase particularly in the central portion of the molding region. One of the reasons for this is that the area where the defect density is increased is the area where the mold is in contact with the resin until the stage after the mold release step, and the peeling progress speed becomes very high in this area, thereby causing the occurrence of the occurrence more easily. The required stress is applied to the resin pattern or mold. In particular, in the technique disclosed in Japanese Patent Laid-Open No. 2011-77529 and Japanese Patent Laid-Open No. 2013-207180, it is also conceivable to peel off isotropic (substantially circular) from molding when the mold is released. The peripheral portion of the region proceeds toward the central portion, and the peeling progress speed increases as the length of the peeling boundary decreases, resulting in frequent occurrence of defects in the central region. The other side The application range of the technique disclosed in Japanese Patent Laid-Open No. 2007-296683 is limited to the orientation pattern and it is not clear whether the technique can suppress the occurrence of defects in the central portion of the molding region. In addition, in the technique disclosed in Japanese Patent Laid-Open No. 2013-207180, the mold releasing operation after the start of the mold release is performed by the spring force generated from the elastic deformation of the mold or the substrate, according to the case where the releasing force of the mold is large, The mold structure, or the like, does not begin to peel until the mold release operation is completed.

舉例而言,本發明提供一種壓印方法,其有利地用於抑制圖案缺陷的發生。 For example, the present invention provides an imprint method that is advantageously used to suppress the occurrence of pattern defects.

根據本發明之一態樣,提供一種利用模具在施加到基板的壓印材料上形成圖案的壓印方法,該方法包括以下步驟:將模具從壓印材料釋放,使得基於模具從壓印材料剝離的邊界是直線的假設,兩條相對的邊界相互靠近同時在壓印材料固化之後保持直線狀態。 According to an aspect of the present invention, there is provided an imprint method for forming a pattern on an imprint material applied to a substrate by using a mold, the method comprising the steps of: releasing the mold from the imprint material such that the mold is peeled off from the imprint material based on the mold The boundary is a straight line hypothesis, the two opposite boundaries are close together and remain in a straight line after the imprint material has solidified.

本發明的其他特徵將參照附圖,根據示範性實施例的以下說明而變得顯而易見。 Other features of the present invention will become apparent from the following description of the exemplary embodiments.

100‧‧‧壓印設備 100‧‧‧imprint equipment

101‧‧‧視窗板 101‧‧‧ Window Board

102‧‧‧模具卡盤 102‧‧‧Mold chuck

103‧‧‧模具 103‧‧‧Mold

103a‧‧‧圖案部分 103a‧‧‧ pattern part

103b‧‧‧凹陷部分 103b‧‧‧ recessed part

104‧‧‧樹脂 104‧‧‧Resin

105‧‧‧晶圓 105‧‧‧ Wafer

106‧‧‧基板卡盤 106‧‧‧Substrate chuck

107‧‧‧照明系統 107‧‧‧Lighting system

108‧‧‧基板平台 108‧‧‧Base platform

109‧‧‧模具形狀控制器 109‧‧‧Mold shape controller

110‧‧‧晶圓形狀控制器 110‧‧‧ Wafer shape controller

111‧‧‧驅動控制電路 111‧‧‧Drive Control Circuit

112‧‧‧樹脂固化控制電路 112‧‧‧Resin curing control circuit

114‧‧‧模具形狀可變機構 114‧‧‧Mold shape variable mechanism

115‧‧‧晶圓形狀可變機構 115‧‧‧Variable wafer shape mechanism

117‧‧‧模具固持機構 117‧‧‧Mold holding mechanism

118‧‧‧施配器 118‧‧‧ dispenser

119‧‧‧控制器 119‧‧‧ Controller

120‧‧‧管 120‧‧‧ tube

121‧‧‧管 121‧‧‧ tube

201‧‧‧接觸區域 201‧‧‧Contact area

209‧‧‧模具形狀控制器 209‧‧‧Mold shape controller

210‧‧‧晶圓形狀控制器 210‧‧‧ Wafer Shape Controller

214‧‧‧模具形狀可變機構 214‧‧‧Mold shape variable mechanism

215‧‧‧晶圓形狀可變機構 215‧‧‧Variable wafer shape mechanism

309‧‧‧模具形狀控制器 309‧‧‧Mold shape controller

314‧‧‧模具形狀可變機構 314‧‧‧Mold shape variable mechanism

501‧‧‧高剛性部分 501‧‧‧High rigidity part

1021‧‧‧第一模具固持單元 1021‧‧‧First mold holding unit

1022‧‧‧第二模具固持單元 1022‧‧‧Second mold holding unit

圖1是圖解了根據本發明的第一實施例的壓印設備的組構的簡圖;圖2係以時間序列方式圖解了壓印處理期間部件等的狀態的簡圖; 圖3A是圖解了在模具與樹脂接觸之前的狀態的簡圖;圖3B是圖解了模具與樹脂接觸時的狀態的簡圖;圖3C係圖解藉由將模具與樹脂接觸而使模具完全填充有樹脂的狀態的簡圖;圖3D是圖解了模具釋放步驟開始時模具與樹脂接觸的狀態的簡圖;圖4A是圖解了根據本發明的第二實施例的壓印設備的組構截面圖;圖4B是圖解了根據本發明的第二實施例的壓印設備的組構透視圖;圖4C是圖解了根據本發明的第二實施例的壓印設備的組構截面圖;圖5是圖解了根據本發明的第三實施例的壓印設備的組構的簡圖;圖6A是圖解了比較範例中的模具釋放步驟中如何進行剝離的平面圖;圖6B是圖解了比較範例中的模具釋放步驟中如何進行剝離的截面圖;圖6C係圖解了比較範例中的模具釋放步驟中如何進行剝離的截面圖;圖7A是圖解了剝離邊界的長度的圖;圖7B是圖解了剝離發展速度的圖;圖8係以相同的時間序列的方式圖解了比較範例和本 實施例中樹脂進行剝離的的簡圖;圖9是圖解了基板卡盤的簡圖;圖10是圖解了根據本發明的第四實施例的壓印設備中使用的模具卡盤的簡圖;圖11A是圖解了模具與樹脂接觸之前的狀態的簡圖;圖11B是圖解了模具與樹脂接觸時的狀態的簡圖;圖11C係圖解了藉由將模具與樹脂接觸而使模具完全填充有樹脂的狀態的簡圖;圖11D是圖解了在模具釋放步驟開始時模具與樹脂接觸的狀態的簡圖;圖11E是圖解了模具釋放步驟完成的狀態的簡圖;圖12係以時間序列方式圖解了在壓印處理期間部件等的狀態的簡圖;圖13A是圖解了模具與樹脂接觸之前的狀態的簡圖;圖13B是圖解了模具與樹脂接觸時的狀態的簡圖;圖13C係圖解藉由將模具與樹脂接觸而使模具完全填充有樹脂的狀態的簡圖;圖13D是圖解了在模具釋放步驟開始時模具與樹脂接觸的狀態的簡圖;圖13E是圖解了模具釋放步驟完成的狀態示意圖;圖14以時間序列的方式圖解了在壓印處理期間部件等的狀態的簡圖;圖15是圖解基板卡盤的簡圖;圖16A是圖解了在模具與樹脂接觸之前的狀態的簡 圖;圖16B是圖解了模具與樹脂接觸的狀態的簡圖;圖16C係圖解藉由將模具與樹脂接觸而使模具完全填充有樹脂的狀態的簡圖;圖16D是圖解了模具釋放步驟開始時模具與樹脂接觸的狀態的簡圖;圖16E是圖解了模具釋放步驟完成的狀態的簡圖;圖17係以時間序列的方式圖解了在壓印處理期間部件等的狀態的簡圖。 1 is a schematic diagram illustrating a configuration of an imprint apparatus according to a first embodiment of the present invention; and FIG. 2 is a diagram illustrating a state of a member or the like during an imprint process in a time series manner; 3A is a diagram illustrating a state before a mold is brought into contact with a resin; FIG. 3B is a diagram illustrating a state in which the mold is in contact with a resin; and FIG. 3C is a diagram illustrating that the mold is completely filled by bringing the mold into contact with the resin. FIG. 3D is a schematic diagram illustrating a state in which the mold is in contact with the resin at the start of the mold releasing step; FIG. 4A is a sectional view showing a configuration of the imprint apparatus according to the second embodiment of the present invention; 4B is a perspective view showing a configuration of an imprint apparatus according to a second embodiment of the present invention; and FIG. 4C is a sectional view showing a configuration of an imprint apparatus according to a second embodiment of the present invention; A schematic view of a configuration of an imprint apparatus according to a third embodiment of the present invention; FIG. 6A is a plan view illustrating how peeling is performed in the mold releasing step in the comparative example; and FIG. 6B is a diagram illustrating mold release in the comparative example. FIG. 6C is a cross-sectional view showing how the peeling is performed in the mold releasing step in the comparative example; FIG. 7A is a view illustrating the length of the peeling boundary; FIG. 7B is a diagram illustrating the peeling development. Figure of speed; Figure 8 illustrates the comparative example and the same in the same time series BRIEF DESCRIPTION OF THE DRAWINGS FIG. 9 is a schematic diagram illustrating a substrate chuck; FIG. 10 is a diagram illustrating a mold chuck used in an imprint apparatus according to a fourth embodiment of the present invention; 11A is a diagram illustrating a state before a mold is brought into contact with a resin; FIG. 11B is a diagram illustrating a state in which the mold is in contact with a resin; and FIG. 11C is a diagram illustrating that the mold is completely filled by bringing the mold into contact with the resin. A simplified diagram of the state of the resin; FIG. 11D is a diagram illustrating a state in which the mold is in contact with the resin at the start of the mold releasing step; FIG. 11E is a diagram illustrating a state in which the mold releasing step is completed; FIG. 12 is a time series manner A diagram illustrating the state of the member or the like during the imprint process; FIG. 13A is a diagram illustrating a state before the mold is in contact with the resin; and FIG. 13B is a diagram illustrating a state when the mold is in contact with the resin; A diagram illustrating a state in which a mold is completely filled with a resin by bringing a mold into contact with a resin; FIG. 13D is a diagram illustrating a state in which the mold is in contact with the resin at the start of the mold releasing step; FIG. 13E is a diagram illustrating the mold. Schematic diagram of the state in which the release step is completed; FIG. 14 is a schematic diagram illustrating the state of the components and the like during the imprint process in a time series manner; FIG. 15 is a diagram illustrating the substrate chuck; FIG. 16A is a diagram illustrating contact between the mold and the resin. Simple state of the previous state Fig. 16B is a diagram illustrating a state in which the mold is in contact with the resin; Fig. 16C is a diagram illustrating a state in which the mold is completely filled with the resin by bringing the mold into contact with the resin; Fig. 16D is a diagram illustrating the start of the mold releasing step A diagram of a state in which the mold is in contact with the resin; Fig. 16E is a diagram illustrating a state in which the mold releasing step is completed; and Fig. 17 is a diagram illustrating a state of the member or the like during the imprinting process in a time series manner.

在下文中,將參考附圖說明本發明的較佳實施例。 Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.

(第一實施例) (First Embodiment)

首先,提供根據本發明的第一實施例的壓印方法和壓印設備的說明。圖1係圖解根據本實施例的壓印設備100的組構示意圖。壓印設備100用於製造作為物品(諸如半導體裝置或類似物)的裝置。施加到晶圓(基板)105的未固化樹脂(壓印材料)104與模具103接觸,以便模製樹脂104,從而在晶圓105上形成樹脂104的圖案。應該注意的是,壓印設備100係以舉例方式使用光固化方法。在文後之附圖中,將說明Z軸在垂直方向(豎直方向)上排列,且相互正交的X軸和Y軸在垂直於Z軸的平面中排列的情況。壓印設備100包括照明系統107、模具固持機 構(模具固持件)117、基板平台(基板固持件)108、施配器118和控制器119。 First, an explanation will be given of an imprint method and an imprint apparatus according to a first embodiment of the present invention. FIG. 1 is a schematic block diagram showing an imprint apparatus 100 according to the present embodiment. The imprint apparatus 100 is used to manufacture an apparatus as an article such as a semiconductor device or the like. The uncured resin (imprint material) 104 applied to the wafer (substrate) 105 is brought into contact with the mold 103 to mold the resin 104, thereby forming a pattern of the resin 104 on the wafer 105. It should be noted that the imprint apparatus 100 uses a photocuring method by way of example. In the drawings, the Z-axis is arranged in the vertical direction (vertical direction), and the mutually orthogonal X-axis and Y-axis are arranged in a plane perpendicular to the Z-axis. The imprint apparatus 100 includes a lighting system 107 and a mold holding machine Structure (mold holder) 117, substrate stage (substrate holder) 108, dispenser 118 and controller 119.

照明系統107係樹脂固化單元,其藉由將光源(圖中未示)放射的紫外光調整成適於固化樹脂104的光而以光(例如,紫外光)照射模具103。光源可以是任何光源,只要其不僅放射紫外光而且放射具有穿透模具103並且固化樹脂104的波長的光即可。例如,當採用熱固化方法時,替代照明系統107作為樹脂固化單元的用於固化熱固樹脂之加熱單元設置在基板平臺108附近。另一方面,當替代熱固樹脂改使用熱塑樹脂時,樹脂固化單元例如為冷卻單元,其設置在基板平臺附近。 The illumination system 107 is a resin curing unit that irradiates the mold 103 with light (for example, ultraviolet light) by adjusting ultraviolet light emitted from a light source (not shown) to light suitable for curing the resin 104. The light source may be any light source as long as it emits not only ultraviolet light but also light having a wavelength that penetrates the mold 103 and cures the resin 104. For example, when a thermal curing method is employed, a heating unit for curing the thermosetting resin instead of the illumination system 107 as a resin curing unit is disposed near the substrate platform 108. On the other hand, when a thermosetting resin is used instead of the thermosetting resin, the resin curing unit is, for example, a cooling unit which is disposed near the substrate platform.

模具103包括圖案部分103a,在圖案部分上,待轉印的三維凹凸圖案(諸如電路圖案或類似物)形成在與晶圓105相對的表面上。模具103包括凹陷部分103b,設在與設置有圖案部分103a的表面相對的側部處之表面的中央區域中。作為模具103的材料,在使用光固化方法的情況中可以使用諸如石英玻璃、藍寶石玻璃或類似物的任何透光材料,但是在採用熱固化方法或者熱塑化方法的情況中可以選擇種類廣泛的材料,諸如,金屬、矽、陶瓷、及類似物。 The mold 103 includes a pattern portion 103a on which a three-dimensional concavo-convex pattern to be transferred, such as a circuit pattern or the like, is formed on a surface opposite to the wafer 105. The mold 103 includes a concave portion 103b provided in a central region of the surface at the side opposite to the surface on which the pattern portion 103a is provided. As the material of the mold 103, any light-transmitting material such as quartz glass, sapphire glass or the like can be used in the case of using the photo-curing method, but a wide variety of types can be selected in the case of using a heat curing method or a thermoplastic method. Materials such as metals, tantalum, ceramics, and the like.

模具保持機構117具有用於固持模具103的模具卡盤102、用於支撐並使得模具卡盤102移動的模具驅動機構(圖中未示)及模具形狀可變機構(模具形狀可變單元)114,可使模具103變形。模具卡盤102可以藉由使用真 空吸力或者靜電力抽吸或者吸引模具103的待紫外光照射的表面的外周區域以固持模具103。另外,模具卡盤102及模具驅動機構中的每一個均在中央部分處(即其內側)具有孔區域,使得從照明系統107放射出的紫外光藉由穿過模具103而被引導向晶圓105。孔區域與形成在模具103中的凹陷部分103b連通。模具驅動機構使得模具103沿著Z軸方向移動,以便選擇性使得模具103與晶圓105上的樹脂104接觸或者從樹脂104釋放模具103。應該注意的是,在壓印處理期間執行的接觸和釋放操作可以藉由使模具103沿著Z軸方向移動實施。同樣的操作也可以藉由使晶圓105在基板平台108的驅動下沿著Z軸方向移動或者藉由相對地、同時地或者順序地使模具103和晶圓105二者移動來實施。藉由將力(變形力)施加到由模具卡盤102固持的模具103,模具形狀可變機構114使得模具103的形狀發生變化。 The mold holding mechanism 117 has a mold chuck 102 for holding the mold 103, a mold driving mechanism (not shown) for supporting and moving the mold chuck 102, and a mold shape variable mechanism (mold shape variable unit) 114. The mold 103 can be deformed. The mold chuck 102 can be used by using The suction or electrostatic force suctions or attracts the peripheral region of the surface of the mold 103 to be irradiated with ultraviolet light to hold the mold 103. In addition, each of the mold chuck 102 and the mold driving mechanism has a hole area at the central portion (ie, inside thereof) such that ultraviolet light emitted from the illumination system 107 is guided to the wafer by passing through the mold 103. 105. The hole area communicates with the recessed portion 103b formed in the mold 103. The mold driving mechanism moves the mold 103 in the Z-axis direction to selectively cause the mold 103 to contact the resin 104 on the wafer 105 or release the mold 103 from the resin 104. It should be noted that the contact and release operations performed during the imprint process can be performed by moving the mold 103 in the Z-axis direction. The same operation can also be performed by moving the wafer 105 in the Z-axis direction under the driving of the substrate platform 108 or by moving the mold 103 and the wafer 105 relatively, simultaneously or sequentially. The mold shape variable mechanism 114 causes the shape of the mold 103 to be changed by applying a force (deformation force) to the mold 103 held by the mold chuck 102.

在此,本實施例中的模具形狀可變機構114係流體壓力施加單元,其使用施加流體壓力的方法,流體壓力係氣體或者液體的壓力,並且在本實施例中,流體壓力施加單元特別使用藉由施加空氣壓力使得模具103的形狀發生變化的方法。應該注意的是,例如,在使用光固化樹脂的情況中或者在需要添加多數光學感測器、成像系統或類似物來進行微細流程管理的情況中,施加流體壓力的方法是有利的,原因在於這種方法容易在壓印設備100中產生紫外光的傳送路徑。模具形狀可變機構114進一步具有:視窗 板101,用於密封包含凹陷部分103b及上述孔區域的空間;模具形狀控制器109;及管120,用於使模具形狀控制器109與密封空間連通。由於在模具103中需要傳送紫外光通過其中,因此窗口板101的材料例如為石英玻璃。模具形狀控制器109基於由控制器119給出的命令調整由凹陷部分103b作為一部分而形成的密封空間內之壓力且其例如是泵,以實施增壓或者減壓。儘管模具形狀可變機構114在本實施例中使用空氣壓力,但是模具形狀可變機構114可以使用諸如氮氣或者氦氣的氣體提供壓力控制,或者亦可使用諸如水或者油等液體提供液體壓力控制。 Here, the mold shape variable mechanism 114 in the present embodiment is a fluid pressure applying unit that uses a method of applying fluid pressure, which is a pressure of a gas or a liquid, and in the present embodiment, the fluid pressure applying unit is particularly used. A method of changing the shape of the mold 103 by applying air pressure. It should be noted that, for example, in the case of using a photocurable resin or in the case where it is required to add a majority of an optical sensor, an imaging system, or the like for fine flow management, a method of applying fluid pressure is advantageous because This method easily produces a transmission path of ultraviolet light in the imprint apparatus 100. The mold shape variable mechanism 114 further has: a window The plate 101 is for sealing a space including the recessed portion 103b and the above-described hole region; a mold shape controller 109; and a tube 120 for communicating the mold shape controller 109 with the sealed space. Since it is necessary to transmit ultraviolet light therethrough in the mold 103, the material of the window plate 101 is, for example, quartz glass. The mold shape controller 109 adjusts the pressure in the sealed space formed by the recessed portion 103b as a part based on the command given by the controller 119 and is, for example, a pump to perform pressurization or decompression. Although the mold shape variable mechanism 114 uses air pressure in the present embodiment, the mold shape variable mechanism 114 may provide pressure control using a gas such as nitrogen or helium, or may provide liquid pressure control using a liquid such as water or oil. .

晶圓(基板)105係待處理基板,例如由單晶矽構成。為了使用在製造作為基板材料的半導體裝置之外的物品中,對於光學元件可以採用諸如石英的光學玻璃,對於發光元件可以採用GaN、SiC或類似者。 The wafer (substrate) 105 is a substrate to be processed, and is composed of, for example, a single crystal germanium. In order to use an article other than a semiconductor device which is a substrate material, an optical glass such as quartz may be employed for the optical element, and GaN, SiC or the like may be employed for the light-emitting element.

基板平台108固持晶圓105並且當模具103與晶圓105上的樹脂104接觸時執行模具103與晶圓105之間的位置對準。基板平台108具有:基板卡盤106,用於固持晶圓105;平台驅動機構(圖中未示),用於支撐基板卡盤106,以便使其沿著X-Y-Z軸向移動;及晶圓形狀可變機構(基板形狀可變單元)115,可使得晶圓105變形。在本實施例中,在晶圓形狀可變機構115中,基板卡盤106例如是真空卡盤。基板卡盤106使用此方法,將吸附區域分割成多個吸附區域,且藉由增加/減小施加到每個單個吸附區域的吸附壓力來改變晶圓105的形狀。在此, 為了在模具釋放步驟(將在下文中詳細說明)期間使晶圓105的形狀變形成與一般晶圓不同的形狀,複數個吸附區域可以在X軸方向上以固定寬度分隔,但在Y軸方向上在整個吸附區域上連通。應該注意的是,當在模具模具形狀控制器109中時,每個吸附區域中的壓力調節單元可以包括作為實施增壓和減壓的泵的晶圓模具形狀控制器110和管121,以便調整空氣壓力。 The substrate platform 108 holds the wafer 105 and performs positional alignment between the mold 103 and the wafer 105 when the mold 103 is in contact with the resin 104 on the wafer 105. The substrate platform 108 has a substrate chuck 106 for holding the wafer 105, a platform driving mechanism (not shown) for supporting the substrate chuck 106 so as to be moved along the XYZ axis; and the wafer shape can be The variable mechanism (substrate shape variable unit) 115 can deform the wafer 105. In the present embodiment, in the wafer shape variable mechanism 115, the substrate chuck 106 is, for example, a vacuum chuck. Using the method, the substrate chuck 106 divides the adsorption region into a plurality of adsorption regions, and changes the shape of the wafer 105 by increasing/decreasing the adsorption pressure applied to each of the individual adsorption regions. here, In order to deform the shape of the wafer 105 into a shape different from that of a general wafer during the mold releasing step (which will be described later in detail), the plurality of adsorption regions may be separated by a fixed width in the X-axis direction, but in the Y-axis direction. Connected throughout the adsorption zone. It should be noted that, when in the mold mold shape controller 109, the pressure adjustment unit in each adsorption region may include a wafer mold shape controller 110 and a tube 121 as pumps for performing pressurization and decompression for adjustment air pressure.

施配器118將樹脂104施加(供應)到作為預設在晶圓105上的圖案形成區域的注料區域,圖案形成區域具有所需的施加圖案。作為壓印材料的樹脂104需要在其填充於模具103和晶圓105之間時具有流動性,而在模製之後成固體以便保持其形狀。特別地,在本實施例中,樹脂104係紫外光可固化樹脂(光固化樹脂),樹脂104在暴露於紫外光時呈現此固化性能,但是根據諸如物品製造處理的多種條件,亦可使用熱固樹脂、熱塑樹脂或類似物,以替代光固化樹脂。 The dispenser 118 applies (supplied) the resin 104 to a shot region as a pattern forming region preset on the wafer 105, the pattern forming region having a desired applied pattern. The resin 104 as an imprint material needs to have fluidity when it is filled between the mold 103 and the wafer 105, and becomes solid after molding to maintain its shape. In particular, in the present embodiment, the resin 104 is an ultraviolet curable resin (photocurable resin), and the resin 104 exhibits such curing property upon exposure to ultraviolet light, but heat may be used according to various conditions such as article manufacturing processing. Resin, thermoplastic resin or the like to replace the photocurable resin.

控制器119由例如電腦或類似物構成且透過線路連接到壓印設備100的部件,以便藉由程式或類似物控制部件的操作及調整。特別地,在本實施例中,控制器119包括驅動控制電路111及樹脂固化控制電路112。驅動控制電路111控制模具形狀可變機構114的操作。驅動控制電路111特別是在接觸操作或者釋放操作期間控制模具固持機構117、基板平台108、模具形狀控制器109及晶圓形狀控制器110的操作。樹脂固化控制電路112控制來自照明 系統107的照射。注意的是,控制器119可與壓印設備100的其餘部分整合(設置在共用殼體中)或者可與壓印設備100的其餘部分分離設置(設置在各別殼體中)。 The controller 119 is constituted by, for example, a computer or the like and is connected to components of the imprint apparatus 100 through a line to control the operation and adjustment of the parts by a program or the like. In particular, in the present embodiment, the controller 119 includes a drive control circuit 111 and a resin cure control circuit 112. The drive control circuit 111 controls the operation of the mold shape variable mechanism 114. The drive control circuit 111 controls the operation of the mold holding mechanism 117, the substrate stage 108, the mold shape controller 109, and the wafer shape controller 110 particularly during a contact operation or release operation. Resin curing control circuit 112 controls illumination from illumination Irradiation of system 107. Note that the controller 119 may be integrated with the rest of the imprint apparatus 100 (disposed in a common housing) or may be disposed separately from the rest of the imprint apparatus 100 (disposed in the respective housings).

接下來,將說明由壓印設備100實施的壓印處理(壓印方法)。首先,控制器119將晶圓105放置並且附接到基板卡盤106。接下來,控制器119驅動基板平臺108,以致使其適當改變晶圓105的位置且致使對準測量系統(圖中未示)測量晶圓105上的對準標記,以便用高準確度檢測晶圓105的位置。然後,控制器119基於偵測結果判定形成在基板上的注料區域的陣列。在此,作為在一個注料區域上形成圖案的流程,控制器119首先致使基板平台108執行將晶圓105上的施加位置定位在施配器118的樹脂注料口下方。然後,施配器118將樹脂104施加到注料區域(施加步驟)。接下來,控制器119致使基板平台108移動晶圓105,使得注料區域位於圖案部分103a正下方的接觸位置,以便達成定位。接下來,控制器119執行圖案部分103a和基板上的注料區域之間的位置對準、圖案部分103a的形狀校正等,然後驅動模具固持機構117,使得圖案部分103a與施加到注料區域的樹脂104接觸,以便將樹脂104填充在圖案部分103a中(填充步驟)。在此狀態中,作為固化步驟,控制器119致使照明系統107從模具103的後表面(上表面)放射紫外光達到一段預定時間,並且由已經傳送通過模具103的紫外光固化樹脂104。接著,樹脂104固化後,控制器119驅動模 具固持機構117,以便藉由擴大模具103和晶圓105之間的間隔從已固化的樹脂104釋放圖案部分103a(模具釋放步驟)。透過上述步驟,在注料區域上形成符合圖案部分103a的三維狀樹脂圖案。在基板平台108的驅動下改變注料區域的同時執行這一系列壓印操作兩次或者更多次,使得壓印設備100可在一晶圓105上形成多個樹脂圖案。 Next, an imprint process (imprint method) performed by the imprint apparatus 100 will be explained. First, the controller 119 places and attaches the wafer 105 to the substrate chuck 106. Next, the controller 119 drives the substrate platform 108 such that it appropriately changes the position of the wafer 105 and causes an alignment measurement system (not shown) to measure the alignment marks on the wafer 105 to detect the crystal with high accuracy. The position of the circle 105. Then, the controller 119 determines an array of the shot regions formed on the substrate based on the detection result. Here, as a flow of patterning on one shot area, the controller 119 first causes the substrate stage 108 to perform positioning of the application position on the wafer 105 below the resin fill port of the dispenser 118. Then, the dispenser 118 applies the resin 104 to the shot filling area (application step). Next, the controller 119 causes the substrate stage 108 to move the wafer 105 such that the shot area is in a contact position directly below the pattern portion 103a to achieve positioning. Next, the controller 119 performs positional alignment between the pattern portion 103a and the shot region on the substrate, shape correction of the pattern portion 103a, and the like, and then drives the mold holding mechanism 117 such that the pattern portion 103a is applied to the shot filling region. The resin 104 is contacted to fill the resin 104 in the pattern portion 103a (filling step). In this state, as a curing step, the controller 119 causes the illumination system 107 to emit ultraviolet light from the rear surface (upper surface) of the mold 103 for a predetermined time, and is cured by the ultraviolet light curing resin 104 that has been conveyed through the mold 103. Next, after the resin 104 is cured, the controller 119 drives the mode. The holding mechanism 117 is provided to release the pattern portion 103a from the cured resin 104 by enlarging the interval between the mold 103 and the wafer 105 (mold release step). Through the above steps, a three-dimensional resin pattern conforming to the pattern portion 103a is formed on the shot region. This series of imprint operations is performed two or more times while changing the shot area under the driving of the substrate stage 108, so that the imprint apparatus 100 can form a plurality of resin patterns on one wafer 105.

圖2係以時間序列方式揭示圖解上述壓印處理的一系列步驟中模具103、晶圓105、和晶圓105上的樹脂104的狀態(形狀)的示意截面圖。在圖2中,通過模具103之重心位置的沿著X軸方向的截面圖(X截面圖)和沿著Y軸方向的截面圖(Y截面圖)係以時間序列的方式平行配置。另外,在圖2中,箭頭表示施加壓力的方向。圖3A至圖3D係示意平面圖,圖解因模具103和晶圓105上的樹脂104之間的接觸造成樹脂104的狀態以一定時間間隔發生變化。首先,在壓印處理啟始時,模具103和具有樹脂104施加到其表面的晶圓105配置成彼此相對。 2 is a schematic cross-sectional view showing the state (shape) of the resin 103 on the mold 103, the wafer 105, and the wafer 105 in a series of steps illustrating the above-described imprint process in a time series manner. In FIG. 2, a cross-sectional view (X cross-sectional view) along the X-axis direction and a cross-sectional view (Y cross-sectional view) along the Y-axis direction by the position of the center of gravity of the mold 103 are arranged in parallel in a time series manner. In addition, in Fig. 2, an arrow indicates the direction in which the pressure is applied. 3A to 3D are schematic plan views illustrating changes in the state of the resin 104 at a certain time interval due to contact between the mold 103 and the resin 104 on the wafer 105. First, at the start of the imprint process, the mold 103 and the wafers 105 having the resin 104 applied to the surface thereof are disposed to face each other.

接著,如圖2中的分圖(i)所示,模具形狀可變機構114使模具103的形狀變形為概呈球形凸狀,使得模具103的圖案部分103a的中央部分更加靠近樹脂104側。此時,因為模具103和樹脂104處於接觸之前的狀態中,所以圖3A所示樹脂104的狀態沒有變化。 Next, as shown in a part (i) of FIG. 2, the mold shape variable mechanism 114 deforms the shape of the mold 103 into a substantially spherical convex shape such that the central portion of the pattern portion 103a of the mold 103 is closer to the resin 104 side. At this time, since the mold 103 and the resin 104 are in a state before the contact, the state of the resin 104 shown in Fig. 3A does not change.

接著,如圖2的分圖(ii)所示,模具103及晶圓105隨著填充步驟而逐漸靠近彼此,然後,模具103(圖 案部分103a)開始與樹脂104接觸。此時,模具形狀可變機構114保持模具103的形狀為凸狀。以這種方式,如圖3B所示,接觸區域201成為圓形並且樹脂104的填充從圖案部分103的中央區域朝向外周區域進行,同時置換其中的空氣,從抑制氣泡捲入的角度來看這是理想的。在圖3B至圖3D中,陰影區域表示在其中模具103與樹脂104接觸的區域(接觸區域201)。 Next, as shown in part (ii) of FIG. 2, the mold 103 and the wafer 105 gradually approach each other with the filling step, and then the mold 103 (Fig. Case portion 103a) begins to contact the resin 104. At this time, the mold shape variable mechanism 114 keeps the shape of the mold 103 convex. In this manner, as shown in FIG. 3B, the contact region 201 becomes circular and the filling of the resin 104 proceeds from the central portion of the pattern portion 103 toward the outer peripheral region while replacing the air therein, from the viewpoint of suppressing the entrapment of the bubble. It is ideal. In FIGS. 3B to 3D, the hatched area indicates a region (contact region 201) in which the mold 103 is in contact with the resin 104.

接著,如圖2中的分圖(iii)所示,在樹脂104完全填充於整個圖案部分103a上之後(見圖3C),在固化步驟中照明系統107藉由例如100mJ/cm2的紫外光照射樹脂104固化樹脂104。在此,控制模具形狀可變機構114,使得隨著樹脂104的填充的進展(填充操作的進展)逐漸釋放模具103的變形,以便模具103的形狀在完成樹脂104的填充時回復成其原始形狀。從抑制樹脂圖案因模具103變形而產生應變的角度來看,儘管理想的是模具形狀可變機構114釋放模具103的變形,如果應變的程度是可接受的,則可以保持將變形力施加到模具103的狀態。 Next, as shown in part (iii) of Fig. 2, after the resin 104 is completely filled over the entire pattern portion 103a (see Fig. 3C), the illumination system 107 is irradiated with ultraviolet light of, for example, 100 mJ/cm 2 in the curing step. The illuminating resin 104 cures the resin 104. Here, the mold shape variable mechanism 114 is controlled such that the deformation of the mold 103 is gradually released as the filling of the resin 104 progresses (the progress of the filling operation) so that the shape of the mold 103 returns to its original shape upon completion of the filling of the resin 104. . From the viewpoint of suppressing strain of the resin pattern due to deformation of the mold 103, although it is desirable that the mold shape variable mechanism 114 releases the deformation of the mold 103, if the degree of strain is acceptable, it is possible to maintain the application of the deformation force to the mold. The state of 103.

接著,如圖2的分圖(iv)所示,晶圓形狀可變機構115使晶圓105的形狀沿著圓柱狀變形呈凸狀,使得晶圓105在平面內平行於一方向(文後稱為「變形參考方向」)較靠近模具103側(基板變形步驟)。應該注意的是,本實施例中的術語「圓柱狀」不僅指嚴格的圓柱狀而且還指所謂的「概呈圓柱狀」。另一方面,模具形狀可變機構114使模具103的形狀變形呈凹狀,使得模具103的 中央部分各向同性遠離樹脂104。在這個情況中,模具103的形狀為圓柱狀,以便符合晶圓105的形狀(模具變形步驟)。在此,因為Y軸方向定義為變形參考方向(圓柱形狀的軸線延伸所沿的方向),所以在X截面圖中僅晶圓105的中央部分浮出基板卡盤106,而在Y橫截面圖中整個晶圓105浮出基板卡盤106。 Next, as shown in the part (iv) of FIG. 2, the wafer shape variable mechanism 115 causes the shape of the wafer 105 to be convex along the cylindrical shape so that the wafer 105 is parallel to one direction in the plane (behind the text) The "deformation reference direction" is closer to the side of the mold 103 (substrate deformation step). It should be noted that the term "cylindrical shape" in the present embodiment means not only a strict cylindrical shape but also a so-called "general cylindrical shape". On the other hand, the mold shape variable mechanism 114 deforms the shape of the mold 103 into a concave shape so that the mold 103 is The central portion is isotropic away from the resin 104. In this case, the shape of the mold 103 is cylindrical so as to conform to the shape of the wafer 105 (mold deformation step). Here, since the Y-axis direction is defined as the deformation reference direction (the direction along which the axis of the cylindrical shape extends), only the central portion of the wafer 105 floats the substrate chuck 106 in the X-sectional view, and the Y cross-sectional view The entire wafer 105 floats out of the substrate chuck 106.

接著,如圖2中的分圖(v)所示,在模具釋放步驟中,模具103及晶圓105上的樹脂104逐漸彼此釋放。此時,模具103及晶圓105皆為圓柱變形形狀。因此,如圖3D所示,從固化的樹脂104剝離模具103時的邊界(介面)是沿著變形參考方向的兩條直線。剝離進行,使得兩相對的剝離邊界在保持直線狀態的同時靠近彼此(垂直於變形參考方向的方向)。應該注意的是,從模具釋放啟始至模具釋放結束均保持此狀態。 Next, as shown in a part (v) of Fig. 2, in the mold releasing step, the resin 104 on the mold 103 and the wafer 105 are gradually released from each other. At this time, both the mold 103 and the wafer 105 have a cylindrical deformed shape. Therefore, as shown in FIG. 3D, the boundary (interface) when the mold 103 is peeled off from the cured resin 104 is two straight lines along the deformation reference direction. The peeling is performed such that the two opposite peeling boundaries are close to each other while being in a straight line state (perpendicular to the direction of the deformation reference direction). It should be noted that this state is maintained from the start of the mold release to the end of the mold release.

如圖2中的分圖(vi)所示,在模具釋放步驟完成後,模具形狀可變機構114及晶圓形狀可變機構115停止施加變形力,隨後模具103及晶圓105的形狀分別回復成其原始形狀,使得壓印處理完成。 As shown in the sub-figure (vi) of FIG. 2, after the mold releasing step is completed, the mold shape variable mechanism 114 and the wafer shape variable mechanism 115 stop applying the deformation force, and then the shapes of the mold 103 and the wafer 105 are respectively restored. In its original shape, the imprint process is completed.

接著,藉由使用數值之比較範例來具體說明,以便特別地闡明實施上述模具釋放步驟的效果。對於比較範例中的模具釋放步驟,與根據本實施例壓印設備100中的元件有相同組構的元件係用相同的參考編號說明。首先,作為本實施例和比較範例之間的共同條件,模具103由具有5mm厚度(在Z軸方向上的尺寸)的合成石英石構成並 且包括凹陷部分,凹陷部分的外尺寸(平面尺寸)具有65mm直徑Φ,且在與設置有圖案部分103a之表面相對的一側的表面處為4mm深度。圖案部分103a係凸出部分,凸出部分的外尺寸在X軸方向具有33mm長度、在Y軸方向上的長度為26mm及在其表面的中央部分處的高度(在Z軸方向上的尺寸)為0.1mm。圖案部分103a具有由形成在其整個表面上的凹凸圖案構成的微結構,並且具有50nm平均寬度而平均深度(在Z軸方向上的尺寸)為100nm的尺寸。作為晶圓形狀可變機構115的基板卡盤106上形成多個吸附區域係在面向圖9中的陰影部分所示圖案部分103a的部分周圍以X軸方向上的70mm的寬度分隔,但在Y軸方向上在整個吸附區域上連通。 Next, it will be specifically explained by using a comparative example of numerical values to specifically clarify the effect of implementing the above-described mold releasing step. For the mold releasing step in the comparative example, the elements having the same configuration as those of the printing apparatus 100 according to the present embodiment are denoted by the same reference numerals. First, as a common condition between the present embodiment and the comparative example, the mold 103 is composed of synthetic quartz having a thickness of 5 mm (dimension in the Z-axis direction) and And including a concave portion having an outer size (planar size) having a diameter Φ of 65 mm and a depth of 4 mm at a surface on the side opposite to the surface on which the pattern portion 103a is provided. The pattern portion 103a is a convex portion, and the outer size of the convex portion has a length of 33 mm in the X-axis direction, a length of 26 mm in the Y-axis direction, and a height at the central portion of the surface (dimension in the Z-axis direction). It is 0.1mm. The pattern portion 103a has a microstructure composed of a concavo-convex pattern formed on the entire surface thereof, and has a size of an average width of 50 nm and an average depth (dimension in the Z-axis direction) of 100 nm. A plurality of adsorption regions formed on the substrate chuck 106 as the wafer shape variable mechanism 115 are separated by a width of 70 mm in the X-axis direction around the portion facing the pattern portion 103a shown by the hatched portion in FIG. 9, but in Y The entire adsorption region is connected in the axial direction.

圖6A至圖6C係圖解比較範例中的模具釋放步驟中樹脂104之剝離如何進行的示意圖。在圖中,圖6A係平面圖。圖6B係X截面圖,其中,圖2中所示之本實施例壓印處理期間的狀態中,此時的狀態特別對應於(v)的X截面圖。另一方面,圖6C係Y截面圖,其中,圖2中所示之本實施例壓印處理期間的狀態中,此時的狀態特別對應於(v)的Y截面圖。在固化步驟後、模具釋放步驟前所實施的變形步驟中,模具形狀可變機構114及晶圓形狀可變機構115兩者施加+10kPa的空氣壓力,使模具103及晶圓105圍繞面向圖案部分103a的部分變形。應當注意的是,在比較範例的情況中,模具形狀可變機構114使模具103的形狀變形呈凸狀,使得模具103的中央部分各 向同性地較靠近晶圓105側。在此狀態中,模具103及晶圓105上的樹脂104在模具釋放步驟中以100μm/s的速度彼此釋放。以此方式,模具103係如圖6B和6C所示各向同性變形,以便不依循晶圓105的圓柱狀。因此,接觸區域201在模具釋放步驟期間如圖6A所示成為圓形(概呈圓形),使剝離從圖案部分103a的外周朝向中心各向同性地進行。 6A to 6C are schematic views illustrating how peeling of the resin 104 is performed in the mold releasing step in the comparative example. In the drawings, Fig. 6A is a plan view. Fig. 6B is a cross-sectional view taken along the line X, in which the state at this time in the state of the imprint process of the present embodiment shown in Fig. 2 particularly corresponds to the X cross-sectional view of (v). On the other hand, Fig. 6C is a Y sectional view in which the state at this time in the state of the imprint process of the present embodiment shown in Fig. 2 particularly corresponds to the Y cross-sectional view of (v). In the deformation step performed after the curing step and before the mold releasing step, both the mold shape variable mechanism 114 and the wafer shape variable mechanism 115 apply an air pressure of +10 kPa to surround the mold 103 and the wafer 105 toward the pattern portion. Partial deformation of 103a. It should be noted that, in the case of the comparative example, the mold shape variable mechanism 114 deforms the shape of the mold 103 in a convex shape so that the central portions of the mold 103 are each It is closer to the wafer 105 side. In this state, the molds 103 and the resin 104 on the wafer 105 are released from each other at a speed of 100 μm/s in the mold releasing step. In this manner, the mold 103 is isotropically deformed as shown in FIGS. 6B and 6C so as not to follow the cylindrical shape of the wafer 105. Therefore, the contact region 201 becomes a circular shape (substantially circular shape) as shown in FIG. 6A during the mold releasing step, and the peeling is performed isotropically from the outer circumference of the pattern portion 103a toward the center.

對比之下,在本實施例中,在變形步驟中,例如,模具形狀可變機構114施加-10kPa的空氣壓力,使模具103變形。另一方面,晶圓形狀可變機構115施加+10kPa的空氣壓力,使晶圓105變形。在此,晶圓形狀可變機構115使晶圓105的形狀變形為如上所述的圓柱狀。此時,如圖2中的分圖(iv)的X截面圖所示,晶圓形狀可變機構115使得包括沿著X軸方向面向圖案部分103a的部分的吸附區域增壓,但是吸附(減壓)另一個吸附區域。另一方面,如圖2中的分圖(iv)的Y截面圖所示,包括沿著Y軸方向面向圖案部分103a的部分的Y軸方向上的整個區域處於增壓狀態。對比之下,在X軸方向上的兩端處的Y軸方向上的不包括面向圖案部分103a的部分的整個區域(未示出)處於吸附狀態。由此狀態,假設在模具釋放步驟中,模具103及晶圓105上的樹脂104係如比較範例中以速度100μm/s彼此釋放。以此方式,如參考圖2中的分圖(v)及圖3D在上文所述,模具103即從晶圓105進行剝離。 In contrast, in the present embodiment, in the deforming step, for example, the mold shape variable mechanism 114 applies an air pressure of -10 kPa to deform the mold 103. On the other hand, the wafer shape variable mechanism 115 applies an air pressure of +10 kPa to deform the wafer 105. Here, the wafer shape variable mechanism 115 deforms the shape of the wafer 105 into a cylindrical shape as described above. At this time, as shown in the X sectional view of the sub-figure (iv) in FIG. 2, the wafer shape variable mechanism 115 pressurizes the adsorption region including the portion facing the pattern portion 103a along the X-axis direction, but adsorbs (subtracts Press) another adsorption zone. On the other hand, as shown in the Y sectional view of the sub-figure (iv) in Fig. 2, the entire region including the portion facing the pattern portion 103a along the Y-axis direction in the Y-axis direction is in a pressurized state. In contrast, the entire region (not shown) in the Y-axis direction at both ends in the X-axis direction excluding the portion facing the pattern portion 103a is in an adsorption state. From this state, it is assumed that in the mold releasing step, the resin 103 on the mold 103 and the wafer 105 are released from each other at a speed of 100 μm/s as in the comparative example. In this manner, the mold 103 is peeled off from the wafer 105 as described above with reference to the sub-graph (v) in FIG. 2 and FIG. 3D.

圖7A及7B係分別圖解對於比較範例中的樹脂104的剝離進行以及本實施例的剝離進行而言,剝離邊界的長度及相對於模具釋放時間的剝離進行速度的圖,透過在上述條件下由高速照相機拍攝剝離狀態的照片並且執行圖像分析獲得上述長度及上述進行速度。其間,圖7A示出剝離邊界的長度,圖7B示出剝離進行速度。在圖7A及圖7B中,實線表示本實施例中的值而虛線表示比較範例中的值。 7A and 7B are diagrams respectively illustrating the length of the peeling boundary and the peeling speed with respect to the mold release time for the peeling of the resin 104 in the comparative example and the peeling progress of the present embodiment, by the above conditions. The high speed camera takes a photograph of the peeled state and performs image analysis to obtain the above length and the above-described progress speed. Meanwhile, FIG. 7A shows the length of the peeling boundary, and FIG. 7B shows the peeling progress speed. In FIGS. 7A and 7B, the solid line indicates the value in the present embodiment and the broken line indicates the value in the comparative example.

首先,當藉由提供根據本實施例的壓印方法實施模具釋放步驟時,形成兩直線邊界,並且因此,圖7A中所示的邊界長度保持在大約52mm的大致固定位準,其為圖案部分103a的短側邊長度(26mm)的兩倍。另一方面,圖7B中所示的剝離進行速度在模具釋放步驟的前期和後期階段中略微升高,但是保持30mm/s或者更小的大致固定位準。在使用這種壓印方法形成在晶圓105上的樹脂圖案中,與其他部分相比,在形成在圖案部分103a的中央部分上的部分中並無缺陷密度的特別變化。 First, when the mold releasing step is carried out by providing the imprint method according to the present embodiment, two straight line boundaries are formed, and therefore, the boundary length shown in Fig. 7A is maintained at a substantially fixed level of about 52 mm, which is a pattern portion The short side of the 103a is twice the length (26mm). On the other hand, the peeling progress speed shown in Fig. 7B is slightly raised in the early and late stages of the mold releasing step, but maintains a substantially fixed level of 30 mm/s or less. In the resin pattern formed on the wafer 105 using this imprint method, there is no particular change in the defect density in the portion formed on the central portion of the pattern portion 103a as compared with the other portions.

接著,當在比較範例中藉由壓印方法實施模具釋放步驟時,圖7A中所示的邊界長度隨著接觸區域201的半徑減小而快速減小。另一方面,圖7B中所示的剝離進行速度在模具釋放步驟的早期階段中略微減小,而在中期階段中增加且在後期階段中急遽升高,並且最終顯示大約120mm/s或者更高的高值。在比較範例中使用壓印方法形成於晶圓105上的樹脂圖案中,形成於圖案部分103a之 中央部分上的部分中的缺陷密度是外周部分的缺陷密度的三倍。另外,在其他部分中,形成於圖案部分103a之中央部分中的部分中的缺陷密度係本實施例的情況的1.2倍。在模具釋放步驟期間,僅晶圓形狀可變機構115處於大氣壓力的情況中以及僅模具形狀可變機構114處於大氣壓力的情況中,比較範例獲得相同的結果。 Next, when the mold releasing step is performed by the imprint method in the comparative example, the boundary length shown in FIG. 7A rapidly decreases as the radius of the contact region 201 decreases. On the other hand, the peeling progress speed shown in Fig. 7B is slightly reduced in the early stage of the mold releasing step, and increases in the intermediate stage and rises sharply in the later stage, and finally shows about 120 mm/s or higher. High value. In the comparative example, an imprint method is used to form a resin pattern on the wafer 105, which is formed in the pattern portion 103a. The defect density in the portion on the central portion is three times the defect density of the peripheral portion. Further, in other portions, the defect density in the portion formed in the central portion of the pattern portion 103a is 1.2 times that of the case of the present embodiment. During the mold release step, in the case where only the wafer shape variable mechanism 115 is at atmospheric pressure and only the mold shape variable mechanism 114 is at atmospheric pressure, the comparative example obtains the same result.

圖8係圖解以相同時間序列的方式在比較範例與本實施例中樹脂104剝離進行(接觸區域201中的變化)的示意平面圖。圖8中的分圖(i)對應於比較範例中的情況,而圖8中的分圖(ii)對應於本實施例的情況。參考圖7A和7B中所示與模具釋放時間的關係,首先,在比較範例中,在模具釋放步驟的後期階段中接觸區域201急遽減少。對比之下,在本實施例的情況中,如圖7A和7B的圖所示,在模具釋放步驟期間實質保持剝離邊界長度的同時,剝離進行速度發生很小變化。 Fig. 8 is a schematic plan view showing the peeling of the resin 104 (change in the contact region 201) in the comparative example and the present embodiment in the same time series. The sub-picture (i) in Fig. 8 corresponds to the case in the comparative example, and the sub-picture (ii) in Fig. 8 corresponds to the case of the present embodiment. Referring to the relationship with the mold release time shown in Figs. 7A and 7B, first, in the comparative example, the contact area 201 is sharply reduced in the later stage of the mold releasing step. In contrast, in the case of the present embodiment, as shown in the graphs of Figs. 7A and 7B, the peeling progress speed slightly changes while the peeling-off boundary length is substantially maintained during the mold releasing step.

如上所述,根據本實施例的壓印方法和壓印設備100具有以下優點。首先,在模具釋放步驟期間抑制用於支援剝離力的剝離邊界長度減小,故可抑制剝離進行速度增加。特別地,在上述範例中,在保持兩個相對的側部相互平行的同時形成平面形狀是矩形的模製區域的邊界,使邊界的長度保持固定長度。以此方式,模制區域中缺陷密度增加的區域(剝離進行速度較高的區域)之數量減小,造成盡可能抑制圖案缺陷的出現。即使模製區域呈現其他形狀(例如,圓形、多邊形或類似形狀)或者具有不同的邊 界角度,雖然邊界長度發生變化,但是邊界的長度沒有如比較範例中說明的那樣極度減小,由此提供與上述相同的效果。這導致消除了複雜以及高速度的速度控制,造成有助於因簡化設備控制而削減成本。如圖2中的分圖(iv)所示,在具有尺寸彼此接近的曲率半徑的模具103及晶圓105沿著相同方向在邊界附近彎曲的狀態中進行剝離,與比較範例相比,幾乎不會發生圖案形狀因彎曲度不匹配而造成的干涉。因此,抑制了因上述原因沿著模製表面方向施加到樹脂圖案的應力。在本實施例中,剝離沿著兩邊界對稱地進行,抵消了沿著模製表面方向施加到兩邊界的力,與比較範例中剝離從一側進行的情況相比,抑制了沿著模製表面方向施加到樹脂圖案的應力。這導致有助於因簡化設備剛性而削減成本。另外,根據本實施例的壓印方法和壓印設備100易於從傳統結構的壓印設備修改,並且因此,根據本實施例的壓印方法和壓印設備100具有廣泛應用。 As described above, the imprint method and the imprint apparatus 100 according to the present embodiment have the following advantages. First, the length of the peeling boundary for supporting the peeling force is suppressed during the mold releasing step, so that the speed of the peeling progress can be suppressed. In particular, in the above example, the boundary of the rectangular molded area is formed while keeping the two opposite sides parallel to each other, keeping the length of the boundary a fixed length. In this way, the number of regions in which the defect density is increased in the molding region (the region where the peeling progress is high) is reduced, resulting in suppressing the occurrence of pattern defects as much as possible. Even if the molded area presents other shapes (for example, circles, polygons, or the like) or has different sides The boundary angle, although the length of the boundary changes, the length of the boundary is not extremely reduced as explained in the comparative example, thereby providing the same effect as described above. This results in the elimination of complex and high speed speed control, which helps to cut costs by simplifying equipment control. As shown in a part (iv) of FIG. 2, the mold 103 and the wafer 105 having the radii of curvature close to each other are peeled off in the same direction in the vicinity of the boundary, and are hardly compared with the comparative example. Interference caused by a mismatch in the shape of the pattern may occur. Therefore, the stress applied to the resin pattern in the direction of the molding surface for the above reasons is suppressed. In the present embodiment, the peeling is performed symmetrically along the two boundaries, canceling the force applied to the two boundaries along the direction of the molding surface, suppressing the molding along the molding as compared with the case where the peeling is performed from one side in the comparative example. The stress applied to the resin pattern in the surface direction. This has led to helping to cut costs by simplifying the rigidity of the equipment. In addition, the imprint method and the imprint apparatus 100 according to the present embodiment are easily modified from the imprint apparatus of the conventional structure, and therefore, the imprint method and the imprint apparatus 100 according to the present embodiment have wide applications.

如上所述,根據本實施例,可以提供有利於抑制出現圖案缺陷的壓印方法。 As described above, according to the present embodiment, it is possible to provide an imprint method which is advantageous in suppressing occurrence of pattern defects.

(第二實施例) (Second embodiment)

接著,將說明根據本發明第二實施例的壓印方法和壓印設備。在第一實施例中已經說明藉由使用空氣壓力(流體壓力)和模具形狀可變機構114以及晶圓形狀可變機構115使模具103或者晶圓105變形的情況。與此相比,本 實施例之特徵在於以下事實,即,模具形狀可變機構和晶圓形狀可變機構使用將驅動機構與待移動的物體接觸,以便機械外力施加於物體的方法。 Next, an imprint method and an imprint apparatus according to a second embodiment of the present invention will be explained. The case where the mold 103 or the wafer 105 is deformed by using the air pressure (fluid pressure) and the mold shape variable mechanism 114 and the wafer shape variable mechanism 115 has been described in the first embodiment. Compared with this, this The embodiment is characterized by the fact that the mold shape variable mechanism and the wafer shape variable mechanism use a method of bringing the drive mechanism into contact with an object to be moved so that a mechanical external force is applied to the object.

圖4A至圖4C係圖解根據本實施例的壓印設備中的模具形狀可變機構214及晶圓形狀可變機構215的組構示意圖。在圖4A至圖4C中,圖4A係X截面圖,圖4B係透視圖,圖4C係圖解又一範例的X截面圖。在本實施例中,對應於第一實施例中的部件或者與第一實施例中的部件類似的部件使用相同的參考編號表示,並且因此省略其說明。 4A to 4C are diagrams showing a configuration of a mold shape variable mechanism 214 and a wafer shape variable mechanism 215 in the imprint apparatus according to the present embodiment. In FIGS. 4A to 4C, FIG. 4A is an X sectional view, FIG. 4B is a perspective view, and FIG. 4C is a X sectional view illustrating still another example. In the present embodiment, components corresponding to those in the first embodiment or components similar to those in the first embodiment are denoted by the same reference numerals, and thus the description thereof will be omitted.

模具形狀可變機構214係由例如石英玻璃製成的柱形物,石英玻璃的直徑為5mm並且黏附固定於模具103的圖案部分103a的中央部分的相對側(後表面側),其中,柱形物的中央軸線平行於Z軸。在此情況中,模具模具形狀控制器209係驅動單元,驅動單元使柱形物沿著Z軸方向移動(直線移動)。也可以使用線性電動機、空氣壓力致動器或類似物作為驅動機構。 The mold shape variable mechanism 214 is a column made of, for example, quartz glass having a diameter of 5 mm and adhered to the opposite side (rear surface side) of the central portion of the pattern portion 103a of the mold 103, wherein the column shape The central axis of the object is parallel to the Z axis. In this case, the mold mold shape controller 209 is a drive unit that moves the cylindrical body in the Z-axis direction (linear movement). A linear motor, an air pressure actuator or the like can also be used as the drive mechanism.

晶圓形狀可變機構215係上推構件,上推構件可以藉由從晶圓105的後表面接觸而將被保持在基板卡盤106上的晶圓105向上推。如果Y軸方向被定義為變形參考方向,則上推構件係概呈長方體構件,其在X軸方向上的寬度為5mm而在Y軸方向上的長度大於晶圓105的長度。為了防止晶圓105在接觸(上推)時受損,上推構件與晶圓105之後表面接觸的部分的截面係修整成圓弧形。在此 情況中,晶圓形狀控制器210為驅動單元,其使上推構件沿著Z軸方向移動。作為驅動機構,也可以使用線性馬達、空氣壓力致動器或類似物。為了使晶圓形狀可變機構215實施此上推操作,基板卡盤106具有開口106a,開口在X軸方向上的寬度為70mm但圍繞面向圖案部分103a的部分則跨Y軸方向延伸。晶圓形狀可變機構215可藉由非接觸方式穿過開口106a而移動。 The wafer shape variable mechanism 215 is a push-up member that can push up the wafer 105 held on the substrate chuck 106 by contacting from the rear surface of the wafer 105. If the Y-axis direction is defined as the deformation reference direction, the push-up member is a rectangular parallelepiped member having a width of 5 mm in the X-axis direction and a length in the Y-axis direction larger than the length of the wafer 105. In order to prevent the wafer 105 from being damaged during contact (push up), the section of the portion where the push-up member is in contact with the rear surface of the wafer 105 is trimmed into a circular arc shape. here In the case, the wafer shape controller 210 is a drive unit that moves the push-up member in the Z-axis direction. As the drive mechanism, a linear motor, an air pressure actuator or the like can also be used. In order for the wafer shape variable mechanism 215 to perform this push-up operation, the substrate chuck 106 has an opening 106a having a width of 70 mm in the X-axis direction but a portion surrounding the pattern portion 103a extending in the Y-axis direction. The wafer shape variable mechanism 215 is movable through the opening 106a in a non-contact manner.

藉由上述組構,在本實施例的模具釋放步驟中,模具形狀可變機構214透過使模具103沿著遠離晶圓105上的樹脂104的方向移動20μm而使模具103變形。另一方面,晶圓形狀可變機構215透過使晶圓105朝向模具103移動20μm而使得晶圓105變形。依此方式,在本實施例中,樹脂104的剝離進行即如第一實施例者,並且因此,其可獲得與第一實施例者相同的效果。特別地,根據本實施例,由於機械性限制,模具釋放步驟中模具103及晶圓105的變形量係獨特地界定,此在模具釋放行為的變化是因樹脂104的材料、轉印圖案的狀態或類似物而較大時尤為有效。另外,形狀可變機構214、215兩者都是實心構件,此在真空中實施壓印處理時尤為有效。 With the above configuration, in the mold releasing step of the present embodiment, the mold shape variable mechanism 214 deforms the mold 103 by moving the mold 103 by 20 μm in the direction away from the resin 104 on the wafer 105. On the other hand, the wafer shape variable mechanism 215 deforms the wafer 105 by moving the wafer 105 toward the mold 103 by 20 μm. In this manner, in the present embodiment, the peeling of the resin 104 proceeds as in the first embodiment, and therefore, the same effect as that of the first embodiment can be obtained. In particular, according to the present embodiment, the deformation amount of the mold 103 and the wafer 105 in the mold releasing step is uniquely defined due to mechanical limitation, and the change in the mold release behavior is due to the material of the resin 104 and the state of the transfer pattern. This is especially effective when the analog or the like is large. Further, both of the shape variable mechanisms 214, 215 are solid members, which is particularly effective when performing an imprint process in a vacuum.

在本發明中,在模具釋放步驟中施加由接觸產生的機械外力的方法並不侷限於上述方法。例如,晶圓形狀可變機構215可以組構成使基板卡盤106自身彎曲大致成圓柱狀,如圖4C中的X截面圖所示。換言之,在此情況中,基板卡盤106亦作為晶圓形狀可變機構215。 In the present invention, the method of applying the mechanical external force generated by the contact in the mold releasing step is not limited to the above method. For example, the wafer shape variable mechanism 215 may be configured such that the substrate chuck 106 itself is bent substantially in a cylindrical shape as shown in the X sectional view in FIG. 4C. In other words, in this case, the substrate chuck 106 also functions as the wafer shape variable mechanism 215.

(第三實施例) (Third embodiment)

接下來著,將說明根據本發明的第三實施例的壓印方法和壓印設備。在第一實施例中,已經說明模具形狀可變機構114使用空氣壓力(流體壓力)使得將模具103變形的情況。相比之下,本實施例的特徵在於以下事實,亦即,模具形狀可變機構或者晶圓形狀可變機構使用此方法,所述方法藉由產生電場或者磁場施加遠距力。文後,藉由舉例將通過示例的方式說明模具形狀可變機構是遠距力施加單元的情況,遠距力施加單元使用藉由產生電場施加遠距力的方法。 Next, an imprint method and an imprint apparatus according to a third embodiment of the present invention will be explained. In the first embodiment, the case where the mold shape variable mechanism 114 uses air pressure (fluid pressure) to deform the mold 103 has been explained. In contrast, the present embodiment is characterized by the fact that the mold shape variable mechanism or the wafer shape variable mechanism uses this method, which applies a remote force by generating an electric field or a magnetic field. Hereinafter, the case where the mold shape variable mechanism is a remote force applying unit will be described by way of example, and the remote force applying unit uses a method of applying a remote force by generating an electric field.

圖5是圖解根據本實施例的壓印設備的組構中的模具形狀可變機構314及晶圓形狀可變機構115的組構示意圖(X截面圖)。在本實施例中,對應於第一實施例中的部件或者與第一實施例中的部件類似的部件使用相同的參考編號表示,並且因此省略其解釋。模具形狀可變機構314係圓形金屬板,其具有例如50mm直徑,模具形狀可變機構314設置成面向模具103的發光側上的圖案部分103a。另一方面,作為透明電極的ITO層沈積在模具103的面向金屬板的後表面上。在此情況中,模具形狀控制器309係電壓源(電壓施加單元),其經由電線連接到作為模具形狀可變機構314的金屬板及模具103的後表面上的ITO層。應該注意的是,晶圓形狀可變機構115與第一實施例者相同。 FIG. 5 is a schematic block diagram (X cross-sectional view) illustrating the mold shape variable mechanism 314 and the wafer shape variable mechanism 115 in the configuration of the imprint apparatus according to the present embodiment. In the present embodiment, components corresponding to those in the first embodiment or components similar to those in the first embodiment are denoted by the same reference numerals, and thus the explanation thereof is omitted. The mold shape variable mechanism 314 is a circular metal plate having a diameter of, for example, 50 mm, and the mold shape variable mechanism 314 is disposed to face the pattern portion 103a on the light emitting side of the mold 103. On the other hand, an ITO layer as a transparent electrode is deposited on the rear surface of the mold 103 facing the metal plate. In this case, the mold shape controller 309 is a voltage source (voltage applying unit) that is connected via electric wires to the metal plate as the mold shape variable mechanism 314 and the ITO layer on the rear surface of the mold 103. It should be noted that the wafer shape variable mechanism 115 is the same as that of the first embodiment.

利用上述構造,在本實施例的模具釋放步驟中,晶圓 形狀可變機構115如同在第一實施例中方式藉由通過施加+10kPa的空氣壓力而使晶圓105變形。隨後,模具模具形狀控制器309將相反極性的電壓施加到模具形狀可變機構314及和ITO層,以便致使得模具103如第一實施例中那樣方式以20μm的最大位移變形,以符合晶圓105的形狀。依此方式,在本實施例中,樹脂104的剝離即如第一實施例中那樣者進展行,並且因此,其可獲得與第一實施例的效果者相同的效果。特別地,根據本實施例,藉由電信號和物理場來執行模具103的變形,在快動壓印處理的情況中需要高速回應時這是有效的。模具形狀可變機構314與作為待變形物品的模具103並不接觸,取決於壓印處理方法尤為有效,尤其是在真空中實施壓印處理時。 With the above configuration, in the mold releasing step of the embodiment, the wafer The shape variable mechanism 115 deforms the wafer 105 by applying air pressure of +10 kPa as in the first embodiment. Subsequently, the mold mold shape controller 309 applies a voltage of the opposite polarity to the mold shape variable mechanism 314 and the ITO layer so that the mold 103 is deformed by the maximum displacement of 20 μm as in the first embodiment to conform to the wafer. 105 shape. In this manner, in the present embodiment, the peeling of the resin 104 is progressed as in the first embodiment, and therefore, the same effect as that of the effect of the first embodiment can be obtained. In particular, according to the present embodiment, the deformation of the mold 103 is performed by an electric signal and a physical field, which is effective in the case where a high speed response is required in the case of the snap press processing. The mold shape variable mechanism 314 is not in contact with the mold 103 as an article to be deformed, and is particularly effective depending on the imprint processing method, particularly when the imprint process is performed in a vacuum.

在上述實施例中,在模具釋放步驟中,晶圓形狀可變機構使晶圓105的形狀沿著圓柱狀變形為凸狀,而模具形狀可變機構使得模具103變形,以便符合晶圓105的形狀。然而,本發明並不侷限於此方法或者結構性組構,只要剝離可進行使得兩相對剝離邊界靠近彼此,同時基於剝離邊界是直線的假設使直線狀態保持在平行狀態即可。換言之,與上文相反,本發明亦可以應用於此方法或結構性組構,使得在模具釋放步驟中,模具形狀可變機構可以將模具103的形狀沿著圓柱狀變形為凸狀,而晶圓形狀可變機構可以將晶圓105變形,以符合模具103的形狀。晶圓105也可以在模具固持機構117的控制下變形。 In the above embodiment, in the mold releasing step, the wafer shape variable mechanism deforms the shape of the wafer 105 into a convex shape along the cylindrical shape, and the mold shape variable mechanism deforms the mold 103 so as to conform to the wafer 105. shape. However, the present invention is not limited to this method or structural configuration as long as the peeling can be performed such that the two opposite peeling boundaries are close to each other while the straight state is maintained in the parallel state based on the assumption that the peeling boundary is a straight line. In other words, contrary to the above, the present invention can also be applied to the method or structural configuration such that in the mold releasing step, the mold shape variable mechanism can deform the shape of the mold 103 along the cylindrical shape into a convex shape, and the crystal The circular shape variable mechanism can deform the wafer 105 to conform to the shape of the mold 103. The wafer 105 can also be deformed under the control of the mold holding mechanism 117.

(第四實施例) (Fourth embodiment)

接下來,將說明根據本發明第四實施例的壓印方法和壓印設備。在第一至第三實施例中,已經說明藉由使用空氣壓力(第一實施例)、機械外力(第二實施例)或者遠距力(第三實施例)使得模具103的形狀和晶圓105的形狀變形額情況。相比之下,本實施例的特徵在於以下事實,亦即,模具103的形狀改變係因模具103的外周的X方向和Y方向之間的剛性差而實施。在以下實施例中,對應於或相似於上述實施例者的部件用相同的參考編號表示,因此省略其解釋。 Next, an imprint method and an imprint apparatus according to a fourth embodiment of the present invention will be explained. In the first to third embodiments, the shape and wafer of the mold 103 have been described by using air pressure (first embodiment), mechanical external force (second embodiment), or remote force (third embodiment). The shape deformation amount of 105. In contrast, the present embodiment is characterized by the fact that the shape change of the mold 103 is performed due to the difference in rigidity between the X direction and the Y direction of the outer circumference of the mold 103. In the following embodiments, components corresponding to or similar to those of the above embodiment are denoted by the same reference numerals, and thus the explanation thereof will be omitted.

圖10是圖解應用在根據本實施例的壓印方法和壓印設備中的模具卡盤102的組構示意圖。模具卡盤102與上述實施例不同之處在於第一模具固持單元1021及第二模具固持單元1022設置在與模具103接觸的接觸表面上的圍繞孔區域的位置處。第一模具固持單元1021具有沿著圖10中的Y方向的長形形狀,第二模具固持單元1022具有沿著圖10中的X方向的長形形狀。第一模具固持單元1021和第二模具固持單元1022係真空卡盤,其可獨立地關於模具103切換抽吸和釋放。應該注意的是,為了應用在本實施例中,模具103由厚度1mm的合成石英石構成並且當俯視時在縱向及橫向上具有100mm2的方形。 FIG. 10 is a schematic block diagram illustrating the mold chuck 102 applied to the imprint method and the imprint apparatus according to the present embodiment. The mold chuck 102 is different from the above embodiment in that the first mold holding unit 1021 and the second mold holding unit 1022 are disposed at positions around the hole area on the contact surface in contact with the mold 103. The first mold holding unit 1021 has an elongated shape along the Y direction in FIG. 10, and the second mold holding unit 1022 has an elongated shape along the X direction in FIG. The first mold holding unit 1021 and the second mold holding unit 1022 are vacuum chucks that can independently switch suction and release with respect to the mold 103. It should be noted that, for application in the present embodiment, the mold 103 is composed of synthetic quartz stone having a thickness of 1 mm and has a square shape of 100 mm 2 in the longitudinal direction and the lateral direction when viewed from above.

圖11是圖解因模具103與晶圓105上的樹脂104之間接觸而造成樹脂104的狀態依時間間隔變化的示意平面圖。圖12是以時間序列的方式圖解在上述壓印處理的一 系列步驟中模具103、晶圓105及和晶圓105上的樹脂104的狀態(形狀)的示意性橫截面圖。坐標軸和箭頭方向的意義與第一實施例的坐標軸和箭頭的意義者相同。圖11A是圖解模具103與樹脂104接觸之前的狀態示意圖。此時,如圖12A所示,模具103的後表面通過藉由第一模具固持單元1021和第二模具固持單元1022被吸到到模具卡盤102。模具形狀可變機構114使得圖案部分103a的中央部分變形為大致圓球凸狀,以便更接近樹脂104側。 FIG. 11 is a schematic plan view illustrating changes in the state of the resin 104 with time intervals due to contact between the mold 103 and the resin 104 on the wafer 105. Figure 12 is a time series diagram illustrating one of the above imprint processes A schematic cross-sectional view of the state (shape) of the mold 103, the wafer 105, and the resin 104 on the wafer 105 in the series of steps. The meanings of the coordinate axes and the arrow directions are the same as those of the coordinate axes and arrows of the first embodiment. FIG. 11A is a schematic view showing a state before the mold 103 is in contact with the resin 104. At this time, as shown in FIG. 12A, the rear surface of the mold 103 is sucked to the mold chuck 102 by the first mold holding unit 1021 and the second mold holding unit 1022. The mold shape variable mechanism 114 deforms the central portion of the pattern portion 103a into a substantially spherical convex shape so as to be closer to the resin 104 side.

圖11B及12B係圖解此狀態的示意圖,在上述狀態中,圖案部分103a開始與樹脂104接觸。如同上述實施例,接觸區域201概呈圓形,使得樹脂填充從圖案部分103a的中央區域朝向外周區域各向同性地進行。圖11C和12C是圖解樹脂104完全填充在整個圖案部分103a上的狀態示意圖。如同在第一實施例中,樹脂104在模具形狀可變機構114的控制下固化。繼而,模具103的後表面僅藉由第一模具固持單元1021被吸到到模具卡盤102。這致使沿著Y方向的模具103的外周剛度大於沿著X方向的剛度。 11B and 12B are schematic views illustrating this state in which the pattern portion 103a comes into contact with the resin 104. As in the above embodiment, the contact region 201 is substantially circular, so that the resin filling is performed isotropically from the central portion of the pattern portion 103a toward the peripheral region. 11C and 12C are schematic views illustrating a state in which the resin 104 is completely filled over the entire pattern portion 103a. As in the first embodiment, the resin 104 is cured under the control of the mold shape variable mechanism 114. Then, the rear surface of the mold 103 is sucked only to the mold chuck 102 by the first mold holding unit 1021. This causes the outer peripheral stiffness of the mold 103 along the Y direction to be greater than the stiffness along the X direction.

圖11D及12D是圖解模具釋放步驟進行狀態的示意圖。與上述實施例不同的是,未使用晶圓形狀可變機構115和模具形狀可變機構114。如圖12D所示,在圖案部分103a變形為沿著圖11D中的Y方向延伸的大致圓柱狀時,模具釋放步驟進行。此時,在圖案部分103a和樹脂104之間產生如圖11D所示形成在兩條直線中並且沿著Y 軸相互平行的剝離界面,然後,剝離進行,使剝離介面變得更靠近彼此,圖11E及12E是圖解模具釋放步驟完成的狀態示意圖。失去用於使得模具103變形而施加的模具釋放力,使得模具103的形狀回復成原始狀態。具有上述組構的壓印設備也提供與上述實施例相同的效果。 11D and 12D are schematic views illustrating the state in which the mold releasing step is performed. Unlike the above embodiment, the wafer shape variable mechanism 115 and the mold shape variable mechanism 114 are not used. As shown in FIG. 12D, when the pattern portion 103a is deformed into a substantially cylindrical shape extending in the Y direction in FIG. 11D, the mold releasing step is performed. At this time, a pattern is formed between the pattern portion 103a and the resin 104 in two straight lines as shown in FIG. 11D and along Y. The peeling interfaces in which the axes are parallel to each other are then peeled off to bring the peeling interfaces closer to each other, and FIGS. 11E and 12E are schematic views illustrating a state in which the mold releasing step is completed. The mold releasing force applied to deform the mold 103 is lost, so that the shape of the mold 103 returns to the original state. The imprint apparatus having the above configuration also provides the same effects as the above embodiment.

在本實施例中,具有平面形狀的普通物體可以用作模具103。因此,本實施例尤其適於需要削減模具103的製造成本的情況、將難以機械加工的材料(諸如藍寶石)用作模具的情況或類似情況。 In the present embodiment, a general object having a planar shape can be used as the mold 103. Therefore, the present embodiment is particularly suitable for the case where it is required to reduce the manufacturing cost of the mold 103, the case where a material which is difficult to machine (such as sapphire) is used as a mold, or the like.

(第五實施例) (Fifth Embodiment)

接著,將說明根據本發明第五實施例的壓印方法和壓印設備。在第四實施例中,由於模具卡盤102的組構,模具103的外周的X方向和Y方向之間的剛性不同。相比之下,本實施例的特徵在於,由於模具103本身的組構,剛性即有所差異。 Next, an imprint method and an imprint apparatus according to a fifth embodiment of the present invention will be explained. In the fourth embodiment, the rigidity between the X direction and the Y direction of the outer circumference of the mold 103 is different due to the configuration of the mold chuck 102. In contrast, the present embodiment is characterized in that rigidity is different due to the configuration of the mold 103 itself.

圖13是圖解因模具103與晶圓105上的樹脂104之間接觸而造成樹脂104的狀態依時間間隔變化的示意平面圖。圖14係以時間序列的方式圖解在上述壓印處理的一系列步驟中模具103、晶圓105及晶圓105上的樹脂104呈現的狀態(形狀)的示意性橫截面圖。坐標軸和箭頭方向的意義與第一實施例的坐標軸和箭頭的意義者相同。圖13A是圖解模具103與樹脂104接觸之前的狀態示意圖。此時,如圖14A所示,模具形狀可變機構114使得圖案部 分103a的中央部分變形為大致圓球凸狀,以便更加靠近樹脂104側。晶圓形狀可變機構115使得晶圓105變形為沿著圖14A中的X方向延伸的圓柱凸狀,以便更靠近樹脂104側。 FIG. 13 is a schematic plan view illustrating changes in the state of the resin 104 with time intervals due to contact between the mold 103 and the resin 104 on the wafer 105. Figure 14 is a schematic cross-sectional view showing the state (shape) of the resin 104 on the mold 103, the wafer 105, and the wafer 105 in a series of steps of the above-described imprint process in a time series manner. The meanings of the coordinate axes and the arrow directions are the same as those of the coordinate axes and arrows of the first embodiment. FIG. 13A is a schematic view showing a state before the mold 103 is in contact with the resin 104. At this time, as shown in FIG. 14A, the mold shape variable mechanism 114 causes the pattern portion The central portion of the minute 103a is deformed into a substantially spherical convex shape so as to be closer to the resin 104 side. The wafer shape variable mechanism 115 deforms the wafer 105 into a cylindrical convex shape extending in the X direction in FIG. 14A so as to be closer to the resin 104 side.

在模具103的四個側部中,沿著圖13A中的Y方向相互平行的兩個對向的側部是兩個高剛性部分501,所述兩個高剛性部分501的剛性隨著厚度增加而增大。高剛性部分501中的每一個的尺寸均為厚度10mm而寬度20mm。此結構使得模具103的在Y方向上的外周剛性高於在X方向上的剛性。模具卡盤102是機械卡盤,其以機械性限制高剛性部分501。另外,橡膠波紋管(圖中未示)防止氣體從模具103的薄部分的端部表面朝向圖13A中的Y方向進入。基板卡盤106是真空卡盤。如圖15所示,基板卡盤106具有此結構,其中,X軸和Y軸係相對於圖9中的X軸和Y軸顛倒。 Among the four side portions of the mold 103, two opposite sides which are parallel to each other along the Y direction in Fig. 13A are two high rigidity portions 501 whose rigidity increases with thickness And increase. Each of the high rigidity portions 501 has a thickness of 10 mm and a width of 20 mm. This structure makes the outer circumference rigidity of the mold 103 in the Y direction higher than the rigidity in the X direction. The mold chuck 102 is a mechanical chuck that mechanically limits the high rigidity portion 501. In addition, a rubber bellows (not shown) prevents gas from entering from the end surface of the thin portion of the mold 103 toward the Y direction in Fig. 13A. The substrate chuck 106 is a vacuum chuck. As shown in FIG. 15, the substrate chuck 106 has this structure in which the X-axis and the Y-axis are reversed with respect to the X-axis and the Y-axis in FIG.

圖13B及14B是圖解圖案部分103a開始與樹脂104接觸的狀態示意圖。如同上述實施例,接觸區域201變為大致圓形,使樹脂填充從圖案部分103a的中央區域朝向外周區域各向同性地進行。圖13C及圖14C是圖解樹脂104完全填充在整個圖案部分103a上的狀態示意圖。如同上述實施例,在完成填充之後藉由紫外光照射固化樹脂104。隨後,模具形狀可變機構114停止施加在模具103上的力,此時,將晶圓105的整個後表面吸到晶圓卡盤106上。 13B and 14B are schematic views illustrating a state in which the pattern portion 103a starts to come into contact with the resin 104. As in the above embodiment, the contact region 201 becomes substantially circular, and the resin filling is performed isotropically from the central region of the pattern portion 103a toward the outer peripheral region. 13C and 14C are schematic views illustrating a state in which the resin 104 is completely filled over the entire pattern portion 103a. As in the above embodiment, the cured resin 104 is irradiated with ultraviolet light after completion of filling. Subsequently, the mold shape variable mechanism 114 stops the force applied to the mold 103, at which time the entire rear surface of the wafer 105 is attracted to the wafer chuck 106.

圖13D及圖14D是圖解模具釋放步驟在進行過程中的狀態示意圖。如圖14D所示,模具釋放步驟進行,同時圖案部分103a變形為沿著圖14D中的Y方向延伸之大致圓柱狀。此時,在圖案部分103a和樹脂104之間產生如圖13D所示形成在兩直線中並且在Y軸上相互平行的剝離界面,然後,剝離進行,使剝離界面更靠近彼此,圖11E和12E是圖解模具釋放步驟完成的狀態示意圖。失去了用於使得模具103變形而施加的模具釋放力,使得模具103的形狀回復原始狀態。具有上述組構的壓印設備也提供與上述實施例相同的效果。 13D and 14D are schematic views illustrating a state in which the mold releasing step is in progress. As shown in Fig. 14D, the mold releasing step is performed while the pattern portion 103a is deformed into a substantially cylindrical shape extending in the Y direction in Fig. 14D. At this time, a peeling interface formed in the two straight lines and parallel to each other on the Y-axis as shown in FIG. 13D is produced between the pattern portion 103a and the resin 104, and then peeling proceeds to bring the peeling interfaces closer to each other, FIGS. 11E and 12E It is a schematic diagram illustrating the state in which the mold release step is completed. The mold releasing force applied to deform the mold 103 is lost, so that the shape of the mold 103 returns to the original state. The imprint apparatus having the above configuration also provides the same effects as the above embodiment.

在本實施例中,模具103的高剛性部分501可以使用作為所謂的「夾緊邊緣」。因此,本實施例尤其適於以下情況:真空卡盤或者靜電卡盤因特別大之模具釋放力而脫離接合的情況、在真空中進行模製的情況、或者需要執行強大機械性限制的情況。 In the present embodiment, the high rigidity portion 501 of the mold 103 can be used as a so-called "clamping edge". Therefore, the present embodiment is particularly suitable for the case where the vacuum chuck or the electrostatic chuck is disengaged due to a particularly large mold releasing force, a case where molding is performed in a vacuum, or a case where strong mechanical restrictions are required to be performed.

(第六實施例) (Sixth embodiment)

接著,將說明根據本發明第六實施例的壓印方法和壓印設備,在第五實施例中,在模具103的四個側部中,模具103在Y方向上的外周剛性設定成高於在X方向者,其中,相互平行的兩相對側部的厚度沿著Y方向增加。相比之下,本實施例之特徵在於以下事實,亦即,模具103的外周的X方向及Y方向的剛性之間的差異小,但是在X方向之模具103的外周確保一定的剛性。 Next, an imprint method and an imprint apparatus according to a sixth embodiment of the present invention will be explained. In the fifth embodiment, in the four side portions of the mold 103, the peripheral rigidity of the mold 103 in the Y direction is set to be higher than In the X direction, the thickness of the opposite side portions parallel to each other increases in the Y direction. In contrast, the present embodiment is characterized by the fact that the difference between the rigidity of the outer circumference of the mold 103 in the X direction and the Y direction is small, but a certain rigidity is secured to the outer circumference of the mold 103 in the X direction.

圖16是圖解因模具103與晶圓105上的樹脂104之間接觸而造成樹脂104的狀態依時間間隔變化的示意平面圖。圖17係以時間序列方式揭示在上述壓印處理的一系列步驟中模具103、晶圓105及晶圓105上的樹脂104呈現的狀態(形狀)的示意截面圖。坐標軸和箭頭方向的意義與第一實施例者相同。圖16A圖解模具103與樹脂104接觸前的狀態。此時,如圖17A所示,模具形狀可變機構114使模具103變形為大致橢圓狀,其朝向樹脂104凸出且其主軸沿著圖16A中的Y方向延伸。與上述實施例不同的是,模具103沒有因其剛性差而變為圓柱狀。 FIG. 16 is a schematic plan view illustrating changes in the state of the resin 104 with time intervals due to contact between the mold 103 and the resin 104 on the wafer 105. Fig. 17 is a schematic cross-sectional view showing a state (shape) of the resin 104 on the mold 103, the wafer 105, and the wafer 105 in a series of steps of the above-described imprint process in a time series manner. The meaning of the coordinate axes and the arrow directions is the same as that of the first embodiment. FIG. 16A illustrates a state before the mold 103 is in contact with the resin 104. At this time, as shown in FIG. 17A, the mold shape variable mechanism 114 deforms the mold 103 into a substantially elliptical shape which is convex toward the resin 104 and whose major axis extends in the Y direction in FIG. 16A. Unlike the above embodiment, the mold 103 is not cylindrical due to its poor rigidity.

在本實施例中的模具103的四個側部中,沿著圖16A中的Y方向設置在兩個相互平行的之兩相對的側部處的各高剛度性部分501中的每一個的尺寸均為具有厚度10mm而及寬度30mm,而沿著圖16A中的X方向設置在相互平行的之兩個相對側部處的各高剛度性部分501中的每一個的具有厚度均為10mm而及寬度為10mm。模具103在Y方向上的外周剛度性因X方向上的高剛性部分501和Y方向上的高剛性部分501之間的寬度差而高於在X方向上的外周剛性。應該注意的是,不存在如第五實施例者中那樣的剛性差。模具卡盤102是藉由吸力保持高剛性部分501的真空卡盤。基板卡盤106是具有圖9中所示組構的真空卡盤。 In the four side portions of the mold 103 in the present embodiment, the size of each of the high-rigidity portions 501 disposed at the two opposite sides of the two mutually parallel sides in the Y direction in FIG. 16A Each having a thickness of 10 mm and a width of 30 mm, and each of the high-rigidity portions 501 disposed at two opposite sides parallel to each other along the X direction in FIG. 16A has a thickness of 10 mm and The width is 10mm. The peripheral rigidity of the mold 103 in the Y direction is higher than the peripheral rigidity in the X direction due to the difference in width between the high rigidity portion 501 in the X direction and the high rigidity portion 501 in the Y direction. It should be noted that there is no rigidity difference as in the fifth embodiment. The mold chuck 102 is a vacuum chuck that holds the high rigidity portion 501 by suction. The substrate chuck 106 is a vacuum chuck having the configuration shown in FIG.

圖16B及17B是圖解圖案部分103a開始與樹脂104接觸的狀態示意圖。接觸區域201變成大致橢圓狀,其主 軸沿著圖16B中的Y方向延伸,使樹脂填充從圖案部分103a的中央區域朝向外周區域各向同性地進行。圖16C及17C是圖解樹脂104被完全填充在整個圖案部分103a上的狀態示意圖。如上述實施例者,在完成填充後由紫外光照射固化樹脂104。隨後,模具形狀可變機構114停止施加在模具103上的力。在迄今為止說明的步驟中,晶圓105的整個後表面被吸到晶圓卡盤106上。 16B and 17B are schematic views illustrating a state in which the pattern portion 103a starts to come into contact with the resin 104. The contact area 201 becomes substantially elliptical, and its main The shaft extends in the Y direction in Fig. 16B, and the resin filling is performed isotropically from the central portion of the pattern portion 103a toward the outer peripheral region. 16C and 17C are schematic views illustrating a state in which the resin 104 is completely filled over the entire pattern portion 103a. As in the above embodiment, the cured resin 104 is irradiated with ultraviolet light after the filling is completed. Subsequently, the mold shape variable mechanism 114 stops the force applied to the mold 103. In the steps described so far, the entire rear surface of the wafer 105 is attracted to the wafer chuck 106.

圖16D及和17D是圖解模具釋放步驟處於在進展行過程中的狀態的簡示意圖。如圖17D所示,模具103變形為成大體致橢圓狀,當從樹脂104觀察時其呈凸出,並且模具釋放步驟進行,同時晶圓105變形為沿著圖16D中的Y方向延伸的大體致圓柱狀。此時,晶圓形狀可變機構115沿著Z軸方向將力施力於加到晶圓105。由於其剛性不同而造成的模具103的變形量差被晶圓105的變形量補充,在圖案部分103a和樹脂104之間產生剝離界面,其形成在兩條直線中並且沿著Y軸相互平行(如圖16D所示),隨後剝離進行,使得剝離界面變得更靠近彼此。圖16E及圖17E是圖解模具釋放步驟完成的狀態的示意圖。失去了使模具103變形而施加的模具釋放力,模具103的形狀回復其原始狀態。具有上述組構的壓印設備也提供與上述實施例相同的效果。 16D and 17D are simplified diagrams illustrating the state in which the mold releasing step is in progress. As shown in Fig. 17D, the mold 103 is deformed into a substantially elliptical shape which is convex when viewed from the resin 104, and the mold releasing step is performed while the wafer 105 is deformed to be substantially extended in the Y direction in Fig. 16D. To the cylindrical shape. At this time, the wafer shape variable mechanism 115 applies a force to the wafer 105 in the Z-axis direction. The difference in the amount of deformation of the mold 103 due to the difference in rigidity is supplemented by the amount of deformation of the wafer 105, and a peeling interface is formed between the pattern portion 103a and the resin 104, which is formed in two straight lines and is parallel to each other along the Y-axis ( As shown in Fig. 16D), the peeling is then performed so that the peeling interfaces become closer to each other. 16E and 17E are schematic views illustrating a state in which the mold releasing step is completed. The mold releasing force applied to deform the mold 103 is lost, and the shape of the mold 103 returns to its original state. The imprint apparatus having the above configuration also provides the same effects as the above embodiment.

在本實施例中,因為模具103的整個外周由高剛性部分501構成,所以模具103整體呈現非常高的剛性。因此,當對於整個圖案特別需要高位置精度時,本實施例尤 其適於因模具卡盤102的強固持力導致模具103中的應變而引發問題的情況。 In the present embodiment, since the entire outer circumference of the mold 103 is constituted by the high rigidity portion 501, the mold 103 as a whole exhibits a very high rigidity. Therefore, this embodiment is particularly useful when high positional accuracy is required for the entire pattern. It is suitable for the case where the strain in the mold 103 is caused by the strong holding force of the mold chuck 102.

應該注意的是,可以選擇晶圓105替代模具103作為具有剛性差異的構件,或者可以模具103和晶圓105二者都具有剛性差異。當剝離昇面不是足夠直的線時,模具103和晶圓105還可以輔助變形。作為使剛性有所不同的方法,使用調節模具103厚度的方法(提供模具103的厚度分佈的方法)可以和調整由模具卡盤102產生吸力的方法結合使用。 It should be noted that the wafer 105 may be selected instead of the mold 103 as a member having a difference in rigidity, or both the mold 103 and the wafer 105 may have a rigidity difference. The mold 103 and the wafer 105 can also assist in deformation when the peeling riser is not a sufficiently straight line. As a method of making the rigidity different, a method of adjusting the thickness of the mold 103 (a method of providing a thickness distribution of the mold 103) can be used in combination with a method of adjusting the suction force generated by the mold chuck 102.

(物品製造方法) (Article manufacturing method)

用於將裝置(半導體積體電路元件、液晶顯示元件或類似物)製成物品的方法可以包括以下步驟:使用上述壓印設備在基板(晶圓、玻璃板、膜狀基板或類似物)上形成圖案。另外,製造方法可以包括蝕刻其上已形成圖案的基板的步驟。當製造諸如圖案化媒體(儲存媒體)、光學元件或類似物的物品時,取代蝕刻步驟時,製造方法可以包括處理其上已經形成有圖案的基板的另一步驟。與習知方法相比,本實施例的裝置製造方法的優點在於物品的性能、品質、生產率和生產成本的至少其中一項。 A method for forming a device (semiconductor integrated circuit component, liquid crystal display element, or the like) into an article may include the step of using the above-described imprint apparatus on a substrate (wafer, glass plate, film substrate, or the like) Form a pattern. In addition, the manufacturing method may include the step of etching the substrate on which the pattern has been formed. When manufacturing an article such as a patterned medium (storage medium), an optical element, or the like, in place of the etching step, the manufacturing method may include another step of processing the substrate on which the pattern has been formed. An advantage of the device manufacturing method of the present embodiment is at least one of performance, quality, productivity, and production cost of the article as compared with the conventional method.

儘管本發明已經參考示範性實施例說明,但是應當理解的是本發明並不侷限於揭露的示範性實施例。文後之申請專利範圍應當廣義解讀為涵蓋所有修改以及等效結構和功能。 While the invention has been described with reference to exemplary embodiments, it is understood that the invention is not limited to the disclosed embodiments. The scope of the patent application after the text should be interpreted broadly to cover all modifications and equivalent structures and functions.

本申請案主張在2014年11月11日提交的日本專利申請No.2014-229177以及在2015年9月1日提交的日本專利申請No.2015-172018的權益,其全部內容在此以引用方式併入本文。 The present application claims the benefit of the Japanese Patent Application No. 2014-229177 filed on Nov. 11, 2014, and the Japanese Patent Application No. 2015-172018 filed on Sep. 1, 2015, the entire disclosure of Incorporated herein.

103‧‧‧模具 103‧‧‧Mold

103a‧‧‧圖案部分 103a‧‧‧ pattern part

104‧‧‧樹脂 104‧‧‧Resin

105‧‧‧晶圓 105‧‧‧ Wafer

106‧‧‧基板卡盤 106‧‧‧Substrate chuck

114‧‧‧模具形狀可變機構 114‧‧‧Mold shape variable mechanism

115‧‧‧晶圓形狀可變機構 115‧‧‧Variable wafer shape mechanism

Claims (22)

一種使用模具在施加於基板上之壓印材料上形成圖案的壓印方法,該壓印方法包含以下步驟:從該壓印材料釋放該模具,使得基於該模具從該壓印材料剝離的邊界為直線的假設,兩相對邊界相互靠近同時在該壓印材料固化後保持直線狀態。 An imprint method for forming a pattern on an imprint material applied to a substrate using a mold, the imprint method comprising the steps of: releasing the mold from the imprint material such that a boundary from which the mold is peeled off based on the mold is The assumption of a straight line is that the two opposite boundaries are close to each other and remain in a straight line after the imprint material has solidified. 如申請專利範圍第1項之壓印方法,其中,在該步驟中,該模具變形使得當從該邊界中的軸線方向觀察時,該模具沿著圓柱狀並且朝向該基板變形為凸狀,該圓柱狀具有平行於該模具的平面而延伸的軸線。 The embossing method of claim 1, wherein in the step, the mold is deformed such that when viewed from an axial direction in the boundary, the mold is deformed into a convex shape along a cylindrical shape and toward the substrate, The cylindrical shape has an axis extending parallel to the plane of the mold. 如申請專利範圍第2項之壓印方法,其中,在該步驟中,該基板變形使得當從該基板觀察時,該基板變形為從模具下凹成凹狀,以對應於該模具的凸出變形部分。 The imprint method of claim 2, wherein in the step, the substrate is deformed such that when viewed from the substrate, the substrate is deformed into a concave shape from the mold to correspond to the convexity of the mold. The deformed part. 如申請專利範圍第1項之壓印方法,其中,在該步驟中,該基板變形使得當從該邊界中的軸線方向觀察時,該基板沿著該圓柱狀並且朝向該模具變形為凸狀,該圓柱狀具有平行於該基板的平面而延伸的軸線。 The imprint method of claim 1, wherein in the step, the substrate is deformed such that the substrate is deformed into a convex shape along the cylindrical shape and toward the mold when viewed from an axial direction in the boundary. The cylindrical shape has an axis extending parallel to a plane of the substrate. 如申請專利範圍第4項之壓印方法,其中,在該步驟中,該模具變形使得當從該模具觀察時,該模具變形為從該基板下凹成凹狀,以對應於該模具的凸出變形部分。 The embossing method of claim 4, wherein in the step, the mold is deformed such that when viewed from the mold, the mold is deformed to be concave from the substrate to correspond to the convexity of the mold. Out of the deformation part. 如申請專利範圍第1項之壓印方法,其中,在該步驟中,藉由調節該模具的剛性使該模具變形,以便從該壓印材料釋放該模具。 The imprint method of claim 1, wherein in the step, the mold is deformed by adjusting the rigidity of the mold to release the mold from the imprint material. 如申請專利範圍第1項之壓印方法,其中,在該步 驟中,藉由使用流體壓力使該模具或者該基板中的至少其中一個變形,以便將該模具從該壓印材料釋放。 For example, the imprint method of claim 1 of the patent scope, wherein, in this step In the step, at least one of the mold or the substrate is deformed by using fluid pressure to release the mold from the imprint material. 如申請專利範圍第1項之壓印方法,其中,在該步驟中,藉由使用由接觸產生的外力而使該模具或者該基板中的至少其中一個變形,以便將該模具從該壓印材料釋放。 The imprint method of claim 1, wherein in the step, at least one of the mold or the substrate is deformed by using an external force generated by the contact, so that the mold is removed from the imprint material freed. 如申請專利範圍第1項之壓印方法,在該步驟中,藉由使用由電場或者磁場產生的遠距力而使該模具或者該基板中的至少其中一個變形,以便將該模具從該壓印材料釋放。 An imprint method according to claim 1, wherein in the step, at least one of the mold or the substrate is deformed by using a remote force generated by an electric field or a magnetic field, so that the mold is pressed from the pressure The printed material is released. 如申請專利範圍第6項之壓印方法,其中,藉由調整用於固持該模具的模具固持件的吸力來調整該模具的剛性。 The imprint method of claim 6, wherein the rigidity of the mold is adjusted by adjusting the suction force of the mold holder for holding the mold. 如申請專利範圍第6項之壓印方法,其中,藉由調整該模具的厚度來調整該模具的剛性。 The imprint method of claim 6, wherein the rigidity of the mold is adjusted by adjusting the thickness of the mold. 一種使用模具在施加於基板上之壓印材料上形成圖案的壓印設備,該壓印設備包括:模具固持件,組構成固持該模具;基板固持件,組構成固持該基板;模具形狀可變單元,組構成使得由該模具固持件固持的該模具變形;基板形狀可變單元,組構成使得由該基板固持件固持的該基板變形;及控制器,控制器組構成預先控制該模具固持件、該模 具形狀可變單元或者該基板形狀可變單元的至少其中一個,使得基於該模具從壓印材料剝離的邊界是直線的假設,兩相對邊界相互靠近同時在該模具從該壓印材料釋放時保持直線狀態。 An imprint apparatus for forming a pattern on an imprint material applied to a substrate by using a mold, the imprint apparatus comprising: a mold holder that is configured to hold the mold; and a substrate holder that is configured to hold the substrate; the mold shape is variable a unit configured to deform the mold held by the mold holding member; a substrate shape variable unit configured to deform the substrate held by the substrate holding member; and a controller, the controller group configured to pre-control the mold holding member The mold At least one of the shape variable unit or the substrate shape variable unit is based on the assumption that the boundary at which the mold is peeled off from the imprint material is a straight line, the two opposite edges are close to each other while being maintained while the mold is released from the imprint material Straight line status. 如申請專利範圍第12項之壓印設備,其中,該控制器控制該模具固持件或者該模具形狀可變單元的至少其中一個,使得在該模具從該壓印材料釋放時,從該邊界中的軸線方向觀察,該模具沿著該圓柱狀並且朝向該基板變形為凸狀,該圓柱狀具有平行於該模具的平面而延伸的軸線。 An imprint apparatus according to claim 12, wherein the controller controls at least one of the mold holder or the mold shape variable unit such that when the mold is released from the imprint material, from the boundary Viewed in the axial direction, the mold is deformed into a convex shape along the cylindrical shape and toward the substrate, the cylindrical shape having an axis extending parallel to the plane of the mold. 如申請專利範圍第13項之壓印設備,其中,該控制器控制該基板形狀可變單元,使得當從該基板觀察時,該基板變形為從該模具下凹成凹狀,以便對應於該模具的凸出變形部分。 The imprint apparatus of claim 13, wherein the controller controls the substrate shape variable unit such that when viewed from the substrate, the substrate is deformed to be concave from the mold so as to correspond to the The convex deformation portion of the mold. 如申請專利範圍第12項之壓印設備,其中,該控制器控制該模具固持件或者該基板形狀可變單元的至少其中一個,使得將該模具從該壓印材料釋放時,從該邊界中的軸線方向觀察,該基板沿著該圓柱狀並且朝向該模具變形為凸狀,該圓柱狀具有平行於該基板的平面而延伸的軸線。 An imprint apparatus according to claim 12, wherein the controller controls at least one of the mold holder or the substrate shape variable unit such that when the mold is released from the imprint material, from the boundary Viewed in the axial direction, the substrate is deformed into a convex shape along the cylindrical shape and toward the mold, the cylindrical shape having an axis extending parallel to the plane of the substrate. 如申請專利範圍第15項之壓印設備,其中,該控制器控制該模具固持件或者該模具形狀可變單元的至少其中一個,使得當從該模具觀察時,該模具變形為從該基板下凹成凹狀,以便對應於該模具的凸出變形部分。 The imprinting apparatus of claim 15, wherein the controller controls at least one of the mold holder or the mold shape variable unit such that when viewed from the mold, the mold is deformed from the substrate The concave shape is concave so as to correspond to the convex deformation portion of the mold. 如申請專利範圍第12項之壓印設備,其中,該控制器藉由調整用於固持該模具的該模具固持件的吸力而使該模具變形。 The imprint apparatus of claim 12, wherein the controller deforms the mold by adjusting a suction force of the mold holder for holding the mold. 如申請專利範圍第12項之壓印設備,其中,該模具形狀可變單元或者該基板形狀可變單元係流體壓力施加單元,該流體壓力施加單元組構成使用流體壓力使該模具或者該基板變形。 The imprinting apparatus of claim 12, wherein the mold shape variable unit or the substrate shape variable unit is a fluid pressure applying unit configured to deform the mold or the substrate using fluid pressure . 如申請專利範圍第12項之壓印設備,其中,該模具形狀可變單元或者該基板形狀可變單元係驅動單元,該驅動單元組構成使用藉由接觸而產生的外力使該模具或者該基板變形。 The imprinting apparatus of claim 12, wherein the mold shape variable unit or the substrate shape variable unit drive unit constitutes an external force generated by contact to cause the mold or the substrate Deformation. 如申請專利範圍第12項之壓印設備,其中,該模具形狀可變單元或者該基板形狀可變單元係遠距力施加單元,該遠距力施加單元組構成使用由電場或者磁場產生的遠距力使該模具或者該基板變形。 The imprinting apparatus of claim 12, wherein the mold shape variable unit or the substrate shape variable unit is a remote force applying unit, and the remote force applying unit group is configured to use a far distance generated by an electric field or a magnetic field. The force forces deform the mold or the substrate. 一種使用在壓印設備中的模具,該壓印設備使用該模具在施加於該基板的壓印材料上形成圖案,其中,該模具具有厚度分佈,使得基於該模具從該壓印材料剝離的邊界為直線的假設,兩相對邊界相互靠近同時在該模具從該壓印材料釋放時保持直線狀態。 A mold for use in an imprint apparatus that uses the mold to form a pattern on an imprint material applied to the substrate, wherein the mold has a thickness distribution such that a boundary based on the mold is peeled off from the imprint material As a straight line hypothesis, the two opposing boundaries are close together and remain in a straight line as the mold is released from the imprint material. 一種製造物品的方法,該方法包括以下步驟:使用如申請專利範圍第1至11項之任一項之壓印方法或者使用如申請專利範圍第12至20項之任一項之壓印設備或者使用如申請專利範圍第21項之模具在基板上形 成圖案;及處理在成形過程中已經在其上執行圖案成形的該基板。 A method of manufacturing an article, the method comprising the steps of: using the imprinting method according to any one of claims 1 to 11 or using the imprinting apparatus according to any one of claims 12 to 20 or Forming on the substrate using a mold as in claim 21 Patterning; and processing the substrate on which patterning has been performed during the forming process.
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Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6954436B2 (en) * 2016-09-12 2021-10-27 大日本印刷株式会社 Replica mold manufacturing method and imprinting equipment
JP6784108B2 (en) * 2016-09-12 2020-11-11 大日本印刷株式会社 Replica mold manufacturing method and imprinting equipment
JP7033994B2 (en) * 2018-04-11 2022-03-11 キヤノン株式会社 Molding equipment and manufacturing method of articles
JP7284639B2 (en) * 2019-06-07 2023-05-31 キヤノン株式会社 Molding apparatus and article manufacturing method
JP7280768B2 (en) * 2019-07-12 2023-05-24 キヤノン株式会社 Film forming apparatus and article manufacturing method
JP7328109B2 (en) 2019-10-02 2023-08-16 キヤノン株式会社 Mold, flattening apparatus, flattening method and method for manufacturing article

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1843884A4 (en) * 2005-01-31 2008-12-17 Molecular Imprints Inc Chucking system for nano-manufacturing
US8945444B2 (en) 2007-12-04 2015-02-03 Canon Nanotechnologies, Inc. High throughput imprint based on contact line motion tracking control
JP5279397B2 (en) * 2008-08-06 2013-09-04 キヤノン株式会社 Imprint apparatus, imprint method, and device manufacturing method
JP5669377B2 (en) * 2009-11-09 2015-02-12 キヤノン株式会社 Imprint apparatus and article manufacturing method
FR2959162B3 (en) * 2010-04-26 2012-03-23 Innopsys SOFT LITHOGRAPHY DEVICE AND METHOD
JP2012134214A (en) * 2010-12-20 2012-07-12 Canon Inc Imprint apparatus and manufacturing method of goods
US8741199B2 (en) * 2010-12-22 2014-06-03 Qingdao Technological University Method and device for full wafer nanoimprint lithography
JP6004738B2 (en) * 2011-09-07 2016-10-12 キヤノン株式会社 Imprint apparatus and article manufacturing method using the same
JP6140966B2 (en) 2011-10-14 2017-06-07 キヤノン株式会社 Imprint apparatus and article manufacturing method using the same
JP6069689B2 (en) * 2012-07-26 2017-02-01 大日本印刷株式会社 Nanoimprint template
JP2014033050A (en) * 2012-08-02 2014-02-20 Toshiba Corp Imprint system and imprint method
CN105229467A (en) 2013-03-15 2016-01-06 普林斯顿大学理事会 Quick and sensitive analysis measurement determination method
JP6472189B2 (en) * 2014-08-14 2019-02-20 キヤノン株式会社 Imprint apparatus, imprint method, and article manufacturing method

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