TW201544562A - Adhesive composition, laminate, and stripping method - Google Patents

Adhesive composition, laminate, and stripping method Download PDF

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Publication number
TW201544562A
TW201544562A TW104112581A TW104112581A TW201544562A TW 201544562 A TW201544562 A TW 201544562A TW 104112581 A TW104112581 A TW 104112581A TW 104112581 A TW104112581 A TW 104112581A TW 201544562 A TW201544562 A TW 201544562A
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Taiwan
Prior art keywords
substrate
laminate
group
adhesive composition
support
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TW104112581A
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Chinese (zh)
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TWI678403B (en
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Takahiro Yoshioka
Koki Tamura
Hirofumi Imai
Atsushi Kubo
Yasumasa Iwata
Shingo Ishida
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Tokyo Ohka Kogyo Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836Wafer tapes, e.g. grinding or dicing support tapes
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/16Layered products comprising a layer of synthetic resin specially treated, e.g. irradiated
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/18Layered products comprising a layer of synthetic resin characterised by the use of special additives
    • B32B27/20Layered products comprising a layer of synthetic resin characterised by the use of special additives using fillers, pigments, thixotroping agents
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/18Layered products comprising a layer of synthetic resin characterised by the use of special additives
    • B32B27/22Layered products comprising a layer of synthetic resin characterised by the use of special additives using plasticisers
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/28Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42
    • B32B27/281Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42 comprising polyimides
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/28Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42
    • B32B27/283Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42 comprising polysiloxanes
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/30Layered products comprising a layer of synthetic resin comprising vinyl (co)polymers; comprising acrylic (co)polymers
    • B32B27/302Layered products comprising a layer of synthetic resin comprising vinyl (co)polymers; comprising acrylic (co)polymers comprising aromatic vinyl (co)polymers, e.g. styrenic (co)polymers
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/30Layered products comprising a layer of synthetic resin comprising vinyl (co)polymers; comprising acrylic (co)polymers
    • B32B27/308Layered products comprising a layer of synthetic resin comprising vinyl (co)polymers; comprising acrylic (co)polymers comprising acrylic (co)polymers
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B38/00Ancillary operations in connection with laminating processes
    • B32B38/10Removing layers, or parts of layers, mechanically or chemically
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/04Interconnection of layers
    • B32B7/06Interconnection of layers permitting easy separation
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/04Interconnection of layers
    • B32B7/12Interconnection of layers using interposed adhesives or interposed materials with bonding properties
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B9/00Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
    • B32B9/005Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising one layer of ceramic material, e.g. porcelain, ceramic tile
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B9/00Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
    • B32B9/04Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B9/045Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/08Macromolecular additives
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J125/00Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring; Adhesives based on derivatives of such polymers
    • C09J125/02Homopolymers or copolymers of hydrocarbons
    • C09J125/04Homopolymers or copolymers of styrene
    • C09J125/06Polystyrene
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J145/00Adhesives based on homopolymers or copolymers of compounds having no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic or in a heterocyclic system; Adhesives based on derivatives of such polymers
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J153/00Adhesives based on block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Adhesives based on derivatives of such polymers
    • C09J153/02Vinyl aromatic monomers and conjugated dienes
    • C09J153/025Vinyl aromatic monomers and conjugated dienes modified
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2255/00Coating on the layer surface
    • B32B2255/20Inorganic coating
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00Properties of the layers or laminate
    • B32B2307/30Properties of the layers or laminate having particular thermal properties
    • B32B2307/306Resistant to heat
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00Properties of the layers or laminate
    • B32B2307/70Other properties
    • B32B2307/714Inert, i.e. inert to chemical degradation, corrosion
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2310/00Treatment by energy or chemical effects
    • B32B2310/08Treatment by energy or chemical effects by wave energy or particle radiation
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00Electrical equipment
    • B32B2457/14Semiconductor wafers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68318Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381Details of chemical or physical process used for separating the auxiliary support from a device or wafer

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Laminated Bodies (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Plasma & Fusion (AREA)
  • Thermal Sciences (AREA)

Abstract

There is provided an adhesive composition which is an adhesive composition for temporarily attaching a substrate to a support plate which supports the substrate, and includes a thermoplastic resin and a release agent.

Description

接著劑組成物、層合體及剝離方法 Substance composition, laminate and peeling method

本發明係有關於接著劑組成物、層合體及剝離方法。 The present invention relates to an adhesive composition, a laminate, and a peeling method.

本案係基於2014年4月22日及2015年2月27日於日本所申請之日本特願2014-088539號及日本特願2015-039457號,主張其優先權,將其內容援用於此。 The present application claims priority based on Japanese Patent Application No. 2014-088539 and Japanese Patent Application No. 2015-039457, filed on Jan. 22, 2014, and on February 27, 2015.

伴隨行動電話、數位AV機器及IC卡等的高機能化,有將搭載之半導體矽晶片(下稱晶片)小型化及薄型化,因此,在封裝體內將該晶片高積體化的要求增加。例如,在將如以CSP(chip size package)或MCP(multi-chip package)為代表的複數個晶片單封裝化的積體電路中,係要求薄型化。為實現封裝體內之晶片的高積體化,需將晶片的厚度減薄至25~150μm的範圍。 With the high performance of mobile phones, digital AV devices, and IC cards, there is a demand for miniaturization and thinning of semiconductor wafers (hereinafter referred to as wafers) to be mounted. Therefore, there is an increasing demand for high integration of the wafers in the package. For example, in an integrated circuit in which a plurality of wafers such as a CSP (chip size package) or an MCP (multi-chip package) are packaged, thinning is required. In order to achieve high integration of the wafer in the package, the thickness of the wafer needs to be reduced to a range of 25 to 150 μm.

然而,作為晶片之基體的半導體晶圓(下稱晶圓)會隨著研磨而變薄,緣此,其強度減弱,晶圓容易產生裂痕或翹曲。此外,因厚度變薄,不易自動運送強度 減弱的晶圓,而必須藉由手工運送,致其操作處理更為煩瑣。 However, a semiconductor wafer (hereinafter referred to as a wafer) which is a substrate of a wafer is thinned by polishing, and as a result, the strength thereof is weakened, and the wafer is liable to be cracked or warped. In addition, because the thickness is thin, it is difficult to automatically transport the strength. Attenuated wafers must be shipped by hand, making their handling more cumbersome.

因此,有人開發出一種藉由向待研磨的晶圓,經由接著層貼合所稱「支持板」之由玻璃、硬質塑膠等構成的平板,來保持晶圓的強度,並防止裂痕的產生及晶圓的翹曲的晶圓處理系統。由於可藉由晶圓處理系統(WHS)維持晶圓的強度,故可使薄板化之半導體晶圓的運送達自動化。 Therefore, it has been developed to maintain the strength of the wafer and prevent the occurrence of cracks by adhering a flat plate made of glass, hard plastic or the like to the wafer to be polished via a subsequent layer of the so-called "support sheet". A warped wafer processing system for wafers. Since the wafer processing system (WHS) can maintain the strength of the wafer, the transportation of the thinned semiconductor wafer can be automated.

作為對半導體晶圓貼合支持體而對半導體晶圓實施處理後,將支持體分離等的半導體晶片之製造方法,已知有如專利文獻1所記載的方法。在專利文獻1所記載的方法中,係將透光性的支持體與半導體晶圓,經由設於支持體側的光熱轉換層及接著層貼合而對半導體晶圓實施處理後,藉由從支持體側照射放射能,使光熱轉換層分解,而將半導體晶圓從支持體分離。 A method of manufacturing a semiconductor wafer in which a semiconductor wafer is processed by a semiconductor wafer bonding support and a support is separated, and the method described in Patent Document 1 is known. In the method described in Patent Document 1, the light-transmitting support and the semiconductor wafer are bonded to each other via a photothermal conversion layer and a subsequent layer provided on the support side, and then the semiconductor wafer is processed. The support side is irradiated with radioactivity to decompose the photothermal conversion layer, and the semiconductor wafer is separated from the support.

先前技術文獻 Prior technical literature 〔專利文獻〕 [Patent Document]

〔專利文獻1〕日本特開2004-64040號公報(2004年2月26日公開) [Patent Document 1] Japanese Laid-Open Patent Publication No. 2004-64040 (published on Feb. 26, 2004)

然而,在專利文獻1所記載的技術中,為使基板與支持體在處理中不會剝離,而使用接著性高的接著 劑組成物形成層合體。因此,在形成層合體前,需有將吸收光而變質的分離層形成於支持體上的步驟。而且,在對基板進行所欲之處理後,為了從基板剝離支持體,而需有對形成於層合體的分離層照光而使其變質的步驟。 However, in the technique described in Patent Document 1, in order to prevent the substrate and the support from being peeled off during the treatment, a high adhesion is used. The agent composition forms a laminate. Therefore, before the formation of the laminate, a step of forming a separation layer which absorbs light and deteriorates on the support is required. Further, after the substrate is subjected to a desired treatment, in order to peel the support from the substrate, a step of illuminating the separation layer formed on the laminate to be deteriorated is required.

因此,吾人要求一種可形成:縱未形成分離層,仍可從基板剝離支持體的層合體之新穎的接著劑組成物。 Therefore, there is a need for a novel adhesive composition which can form a laminate in which the support layer is peeled off from the substrate without forming a separation layer.

本發明係有鑑於上述問題而作成者,其目的在於,係以提供一種可形成:縱未形成分離層,仍可從基板容易地剝離支持體的層合體之新穎的接著劑組成物為目的。 The present invention has been made in view of the above problems, and an object thereof is to provide a novel adhesive composition which can form a laminate in which a support layer is easily peeled off from a substrate without forming a separation layer.

為解決上述課題,本發明之接著劑組成物係用以暫時貼合基板、及支持該基板之支持體的接著劑組成物,其特徵為包含熱塑性樹脂、及脫模劑。 In order to solve the above problems, the adhesive composition of the present invention is an adhesive composition for temporarily bonding a substrate and a support for supporting the substrate, and is characterized by comprising a thermoplastic resin and a release agent.

根據本發明,可發揮如下效果:可提供一種可形成:縱未形成分離層,仍可從基板容易地剝離支持體的層合體之新穎的接著劑組成物。 According to the present invention, it is possible to provide a novel adhesive composition which can form a laminate in which a support layer can be easily peeled off from a substrate without forming a separation layer.

1‧‧‧基板 1‧‧‧Substrate

2‧‧‧支持板(支持體) 2‧‧‧Support board (support)

3‧‧‧接著層 3‧‧‧Next layer

10‧‧‧層合體 10‧‧‧Layer

11‧‧‧層合體 11‧‧‧Layer

2a‧‧‧支持板(支持體) 2a‧‧‧Support board (support)

21‧‧‧雷射照射裝置 21‧‧‧Laser illumination device

第1圖為用以說明本發明一實施形態之層合體、及、本發明一實施形態之包含前處理步驟的剝離方法的示意性立體圖。 Fig. 1 is a schematic perspective view for explaining a laminate according to an embodiment of the present invention and a peeling method including a pretreatment step according to an embodiment of the present invention.

第2圖為用以說明本發明一實施形態之層合體、及、 本發明一實施形態之包含照光步驟的剝離方法的示意性立體圖。 Figure 2 is a view showing a laminate according to an embodiment of the present invention, and A schematic perspective view of a peeling method including an illuminating step according to an embodiment of the present invention.

<接著劑組成物> <Binder composition>

以下對本發明一實施形態之接著劑組成物,一面參照第1圖一面詳細加以說明。 Hereinafter, the adhesive composition according to an embodiment of the present invention will be described in detail with reference to Fig. 1 .

一實施形態之接著劑組成物係用以暫時貼合基板1、及支持基板1之支持板(支持體)2的接著劑組成物,其係包含熱塑性樹脂、及脫模劑(第1圖之(a))。 The adhesive composition of one embodiment is used for temporarily bonding the substrate 1 and the adhesive composition of the support sheet (support) 2 of the support substrate 1, which comprises a thermoplastic resin and a release agent (Fig. 1) (a)).

根據上述構成,可適當地調整以接著劑組成物所形成之接著層3的接著性。因此,在對基板1進行所欲之處理時,可經由接著層3適當地貼妥基板1及支持板2。又,在對基板1進行所欲之處理後,可從基板1容易地剝離支持板2。因此,在貼合基板1及支持板2前,無需先在支持板2形成分離層。亦即,若使用一實施形態之接著劑組成物,則可形成:縱未形成藉由吸收光而變質的分離層,仍可從基板1剝離支持板2的層合體。 According to the above configuration, the adhesion of the adhesive layer 3 formed by the adhesive composition can be appropriately adjusted. Therefore, when the substrate 1 is subjected to a desired treatment, the substrate 1 and the support plate 2 can be appropriately attached via the adhesive layer 3. Moreover, after performing the desired treatment on the substrate 1, the support plate 2 can be easily peeled off from the substrate 1. Therefore, it is not necessary to form a separation layer on the support plate 2 before bonding the substrate 1 and the support plate 2. In other words, when the adhesive composition of one embodiment is used, it is possible to form a laminate in which the support layer 2 is peeled off from the substrate 1 without forming a separation layer which is deteriorated by absorption of light.

〔熱塑性樹脂〕 [thermoplastic resin]

熱塑性樹脂係含於接著劑組成物的樹脂,係藉由熱塑性樹脂的接著性將基板1及支持板2接著。以下,就本實 施形態之接著劑組成物所含之熱塑性樹脂的組成加以說明。 The thermoplastic resin is a resin contained in the adhesive composition, and the substrate 1 and the support sheet 2 are bonded by the adhesion of the thermoplastic resin. Below, this is the real The composition of the thermoplastic resin contained in the adhesive composition of the embodiment will be described.

作為熱塑性樹脂,可使用例如丙烯酸系、酚醛系、萘醌系、烴系、聚醯亞胺系、彈性體等在該領域中使用於周知之各種接著劑的熱塑性樹脂。 As the thermoplastic resin, for example, a thermoplastic resin which is used in various fields such as acrylic, phenolic, naphthoquinone, hydrocarbon, polyimide, or elastomer in various fields can be used.

作為熱塑性樹脂,可舉出例如彈性體樹脂、烴樹脂、丙烯酸-苯乙烯系樹脂、馬來醯亞胺系樹脂等或此等組合而成者等。 The thermoplastic resin may, for example, be an elastomer resin, a hydrocarbon resin, an acrylic-styrene resin, a maleic imine resin, or the like.

接著劑組成物的玻璃轉移溫度(Tg)係隨熱塑性樹脂的種類或分子量、及摻合於接著劑組成物之塑化劑等的種類或量而變化。接著劑組成物所含有之熱塑性樹脂的種類或分子量可依據基板及支持體的種類來適當選擇,惟接著劑組成物所使用之熱塑性樹脂的Tg較佳處於-60℃以上且200℃以下的範圍內,更佳處於-25℃以上且150℃以下的範圍內。接著劑組成物所使用之熱塑性樹脂的Tg藉由處於-60℃以上且200℃以下的範圍內,冷卻時不需要過多的能量,可適當地降低接著層3的接著力。又,接著層3的Tg亦可透過適當摻合塑化劑或低聚合度的樹脂等來調整。 The glass transition temperature (Tg) of the subsequent composition varies depending on the kind or molecular weight of the thermoplastic resin, and the kind or amount of the plasticizer blended in the adhesive composition. The type or molecular weight of the thermoplastic resin contained in the composition of the second embodiment can be appropriately selected depending on the type of the substrate and the support, but the Tg of the thermoplastic resin used in the adhesive composition is preferably in the range of -60 ° C or more and 200 ° C or less. More preferably, it is in the range of -25 ° C or more and 150 ° C or less. The Tg of the thermoplastic resin used in the composition of the second embodiment is in the range of -60 ° C or more and 200 ° C or less, and does not require excessive energy during cooling, and the adhesion of the adhesive layer 3 can be appropriately lowered. Further, the Tg of the subsequent layer 3 can also be adjusted by appropriately blending a plasticizer or a resin having a low degree of polymerization.

(彈性體) (elastomer)

一實施形態之接著劑組成物所含的熱塑性樹脂較佳為彈性體。 The thermoplastic resin contained in the adhesive composition of one embodiment is preferably an elastomer.

藉由熱塑性樹脂使用彈性體,可得耐熱性 高,且對光阻溶劑的耐性高的接著劑組成物。 Heat resistance can be obtained by using an elastomer using a thermoplastic resin An adhesive composition that is high and resistant to photoresist solvents.

彈性體較佳包含苯乙烯單元作為主鏈的構成單元,且該「苯乙烯單元」亦可具有取代基。作為取代基,可舉出例如碳數1~5之烷基、碳數1~5之烷氧基、碳數1~5之烷氧烷基、乙醯氧基、羧基等。又,該苯乙烯單元的含量更佳處於14重量%以上且50重量%以下的範圍內。再者,彈性體的重量平均分子量較佳處於10,000以上且200,000以下的範圍內。 The elastomer preferably contains a styrene unit as a constituent unit of the main chain, and the "styrene unit" may have a substituent. The substituent may, for example, be an alkyl group having 1 to 5 carbon atoms, an alkoxy group having 1 to 5 carbon atoms, an alkoxyalkyl group having 1 to 5 carbon atoms, an ethoxy group or a carboxyl group. Further, the content of the styrene unit is more preferably in the range of 14% by weight or more and 50% by weight or less. Further, the weight average molecular weight of the elastomer is preferably in the range of 10,000 or more and 200,000 or less.

只要苯乙烯單元的含量處於14重量%以上且50重量%以下的範圍內、彈性體的重量平均分子量處於10,000以上且200,000以下的範圍內,則容易溶解於後述之烴系溶劑中,因此,可更容易且迅速地去除接著層。又,藉由苯乙烯單元的含量及重量平均分子量處於上述範圍內,可發揮晶圓對供予光阻劑微影步驟時所暴露的光阻溶劑(例如丙二醇單甲醚乙酸酯(PGMEA)、丙二醇單甲醚(PGME)等)、酸(氫氟酸等)、鹼(氫氧化四甲銨(TMAH)等)之優良的耐性。 When the content of the styrene unit is in the range of 14% by weight or more and 50% by weight or less and the weight average molecular weight of the elastomer is in the range of 10,000 or more and 200,000 or less, it is easily dissolved in a hydrocarbon solvent to be described later. The subsequent layers are removed more easily and quickly. Further, by the content of the styrene unit and the weight average molecular weight within the above range, the photoresist which is exposed when the wafer is subjected to the photoresist lithography step (for example, propylene glycol monomethyl ether acetate (PGMEA)) can be exhibited. Excellent resistance to propylene glycol monomethyl ether (PGME), acid (hydrofluoric acid, etc.), alkali (tetramethylammonium hydroxide (TMAH), etc.).

此外,彈性體中,亦可進一步混合後述之(甲基)丙烯酸酯。 Further, in the elastomer, a (meth) acrylate described later may be further blended.

又,苯乙烯單元的含量較佳為17重量%以上;又,更佳為40重量%以下。 Further, the content of the styrene unit is preferably 17% by weight or more, and more preferably 40% by weight or less.

重量平均分子量的較佳範圍為20,000以上;又,更佳範圍為150,000以下。 The weight average molecular weight is preferably in the range of 20,000 or more; more preferably, it is in the range of 150,000 or less.

作為彈性體,只要苯乙烯單元的含量處於14 重量%以上且50重量%以下的範圍內、彈性體的重量平均分子量處於10,000以上且200,000以下的範圍內,則可使用各種的彈性體。可舉出例如聚苯乙烯-聚(乙烯/丙烯)嵌段共聚物(SEP)、苯乙烯-異戊二烯-苯乙烯嵌段共聚物(SIS)、苯乙烯-丁二烯-苯乙烯嵌段共聚物(SBS)、苯乙烯-丁二烯-丁烯-苯乙烯嵌段共聚物(SBBS)、及、此等之氫化物、苯乙烯-乙烯-丁烯-苯乙烯嵌段共聚物(SEBS)、苯乙烯-乙烯-丙烯-苯乙烯嵌段共聚物(苯乙烯-異戊二烯-苯乙烯嵌段共聚物)(SEPS)、苯乙烯-乙烯-乙烯-丙烯-苯乙烯嵌段共聚物(SEEPS)、苯乙烯嵌段為反應交聯型的苯乙烯-乙烯-乙烯-丙烯-苯乙烯嵌段共聚物(SeptonV9461(KURARAY股份有限公司製)、SeptonV9475(KURARAY股份有限公司製))、苯乙烯嵌段為反應交聯型的苯乙烯-乙烯-丁烯-苯乙烯嵌段共聚物(具有反應性之聚苯乙烯系硬嵌段的SeptonV9827(KURARAY股份有限公司製))、聚苯乙烯-聚(乙烯-乙烯/丙烯)嵌段-聚苯乙烯嵌段共聚物(SEEPS-OH:末端羥基改質)等。可使用彈性體之苯乙烯單元的含量及重量平均分子量處於上述範圍內者。 As an elastomer, as long as the content of styrene units is 14 In the range of % by weight or more and 50% by weight or less, and the weight average molecular weight of the elastomer is in the range of 10,000 or more and 200,000 or less, various elastomers can be used. For example, polystyrene-poly(ethylene/propylene) block copolymer (SEP), styrene-isoprene-styrene block copolymer (SIS), styrene-butadiene-styrene embedded Segmented copolymer (SBS), styrene-butadiene-butene-styrene block copolymer (SBBS), and the like, hydride, styrene-ethylene-butylene-styrene block copolymer ( SEBS), styrene-ethylene-propylene-styrene block copolymer (styrene-isoprene-styrene block copolymer) (SEPS), styrene-ethylene-ethylene-propylene-styrene block copolymerization (SEEPS) and styrene block are a reaction-crosslinking type styrene-ethylene-ethylene-propylene-styrene block copolymer (Septon V9461 (manufactured by KURARAY Co., Ltd.), Septon V9475 (manufactured by KURARAY Co., Ltd.)), The styrene block is a reaction-crosslinked type styrene-ethylene-butylene-styrene block copolymer (Septon V9827 (manufactured by KURARAY Co., Ltd.) having a reactive polystyrene-based hard block), and polystyrene - Poly(ethylene-ethylene/propylene) block-polystyrene block copolymer (SEEPS-OH: terminal hydroxyl group modification) and the like. The content of the styrene unit of the elastomer and the weight average molecular weight may be within the above range.

上述彈性體當中,更佳為氫化彈性體。此係因氫化彈性體對熱的穩定性高,不易發生分解或聚合等的變質之故。又,基於對烴系溶劑的溶解性及對光阻溶劑的耐性觀點,氫化彈性體亦屬更佳者。 Among the above elastomers, a hydrogenated elastomer is more preferred. This is because the hydrogenated elastomer has high heat stability and is less susceptible to deterioration such as decomposition or polymerization. Further, the hydrogenated elastomer is also preferable from the viewpoints of solubility in a hydrocarbon solvent and resistance to a resist solvent.

此外,彈性體更佳為兩端經苯乙烯嵌合的嵌 段聚合物。其原因在於,藉由在兩末端嵌合熱穩定性高的苯乙烯,彈性體可顯示更高的耐熱性之故。 In addition, the elastomer is more preferably embedded at both ends via styrene Segment polymer. The reason for this is that the elastomer exhibits higher heat resistance by fitting styrene having high thermal stability at both ends.

一實施形態之接著劑組成物所含的彈性體,在上述彈性體當中,更佳為氫化苯乙烯彈性體。 The elastomer contained in the adhesive composition of one embodiment is more preferably a hydrogenated styrene elastomer among the above elastomers.

氫化苯乙烯彈性體係指苯乙烯及共軛二烯之嵌段共聚物的氫化物。亦即,氫化苯乙烯彈性體係兼備與氫化彈性體相同的優點及嵌段聚合物的優點。 The hydrogenated styrene elastomer system refers to a hydride of a block copolymer of styrene and a conjugated diene. That is, the hydrogenated styrene elastomeric system has the same advantages as the hydrogenated elastomer and the advantages of the block polymer.

從而,藉由將氫化苯乙烯彈性體使用於作為熱塑性樹脂,可進一步提升以接著劑組成物形成之接著層3對熱的穩定性,能夠使接著層3不易因分解或聚合等而發生變質。又,可進一步提高接著層3的耐熱性。再者,將氫化苯乙烯彈性體使用於作為熱塑性樹脂,由對烴系溶劑的溶解性及對光阻溶劑的耐性觀點而言亦屬較佳者。 Therefore, by using the hydrogenated styrene elastomer as the thermoplastic resin, the stability of the adhesive layer 3 formed by the adhesive composition can be further improved, and the adhesive layer 3 can be prevented from being deteriorated by decomposition or polymerization. Moreover, the heat resistance of the adhesive layer 3 can be further improved. Further, the hydrogenated styrene elastomer is preferably used as a thermoplastic resin from the viewpoints of solubility in a hydrocarbon solvent and resistance to a photoresist solvent.

作為可用作構成接著層3之接著劑所含之彈性體的市售品,可舉出例如KURARAY股份有限公司製「Septon(商品名)」、KURARAY股份有限公司製「Hybrar(商品名)」、旭化成股份有限公司製「Taftec(商品名)」、JSR股份有限公司製「DYNARON(商品名)」等。 For example, "Septon (trade name)" manufactured by KURARAY Co., Ltd. and "Hybrar (trade name)" manufactured by KURARAY Co., Ltd., as a commercially available product which can be used as an adhesive for the adhesive layer 3, may be mentioned. "Taftec (trade name)" manufactured by Asahi Kasei Co., Ltd., "DYNARON (trade name)" manufactured by JSR Co., Ltd., etc.

作為構成接著層3之接著劑所含之彈性體的含量,若以例如接著劑組成物總量為100重量份,較佳處於50重量份以上且99重量份以下的範圍內,更佳處於60重量份以上且99重量份以下的範圍內,最佳處於70重量份以上且95重量份以下的範圍內。藉由使之處於此 等範圍內,可維持耐熱性,並可適當地貼合晶圓及支持體。 The content of the elastomer contained in the adhesive constituting the adhesive layer 3 is, for example, 100 parts by weight or more, preferably 50 parts by weight or more and 99 parts by weight or less, more preferably 60 parts by weight, based on the total amount of the adhesive composition. In the range of the weight part or more and 99 parts by weight or less, it is preferably in the range of 70 parts by weight or more and 95 parts by weight or less. By making it here In the same range, heat resistance can be maintained, and the wafer and the support can be appropriately bonded.

另外,就彈性體而言,亦可混合有多種。亦即,構成接著層3的接著劑亦可包含多種彈性體。多種彈性體中的至少一種只要包含苯乙烯單元作為主鏈的構成單元即可。又,若多種彈性體中的至少一種之苯乙烯單元的含量處於14重量%以上且50重量%以下的範圍內、或重量平均分子量處於10,000以上且200,000以下的範圍內,則屬本發明之範疇。又,在構成接著層3的接著劑中包含多種彈性體時,予以混合的結果,可將苯乙烯單元的含量調整為上述範圍內。例如,若將苯乙烯單元的含量為30重量%的KURARAY股份有限公司製Septon(商品名)之Septon4033、與苯乙烯單元的含量為13重量%的Septon(商品名)之Septon2063以重量比1比1混合,則相對於接著劑所含之彈性體全體的苯乙烯含量成為21~22重量%,從而達14重量%以上。又,例如將苯乙烯單元為10重量%者與60重量%者以重量比1比1混合時則成為35重量%,而處於上述範圍內。本發明亦可為此種形態。又,構成接著層3之接著劑所含的多種彈性體最佳為全以上述範圍內包含苯乙烯單元,且為上述範圍內的重量平均分子量。 Further, in terms of the elastomer, a plurality of types may be mixed. That is, the adhesive constituting the adhesive layer 3 may also contain a plurality of elastomers. At least one of the plurality of elastomers may contain a styrene unit as a constituent unit of the main chain. Moreover, it is within the scope of the present invention if the content of the styrene unit of at least one of the plurality of elastomers is in the range of 14% by weight or more and 50% by weight or less, or the weight average molecular weight is in the range of 10,000 or more and 200,000 or less. . Further, when a plurality of elastomers are contained in the adhesive constituting the adhesive layer 3, the content of the styrene unit can be adjusted to the above range as a result of mixing. For example, Septon 4033 of Septon (trade name) manufactured by KURARAY Co., Ltd., and Septon 2063 of Septon (trade name) having a styrene unit content of 30% by weight in a weight ratio of 1% by weight. When 1 is mixed, the styrene content of the entire elastomer contained in the adhesive is 21 to 22% by weight, and is 14% by weight or more. Further, for example, when 10% by weight of the styrene unit and 60% by weight are mixed at a weight ratio of 1 to 1, the ratio is 35% by weight, which is within the above range. The invention may also be in this form. Further, it is preferable that the plurality of elastomers contained in the adhesive constituting the adhesive layer 3 contain styrene units in the above range and have a weight average molecular weight within the above range.

(烴樹脂) (hydrocarbon resin)

一實施形態之接著劑組成物所含的熱塑性樹脂更佳為 烴樹脂。 The thermoplastic resin contained in the adhesive composition of one embodiment is more preferably Hydrocarbon resin.

若使用烴樹脂作為熱塑性樹脂,則可形成耐熱性更高的接著層3。 When a hydrocarbon resin is used as the thermoplastic resin, the adhesive layer 3 having higher heat resistance can be formed.

烴樹脂係具有烴骨架,並將單體組成物聚合而成的樹脂。作為烴樹脂,可舉出環烯烴系聚合物(以下有稱為「樹脂(A)」)、以及、由萜烯樹脂、松香系樹脂及石油樹脂所成之群中選出的至少1種樹脂(以下有稱為「樹脂(B)」)等,惟非限定於此。 The hydrocarbon resin is a resin having a hydrocarbon skeleton and polymerizing a monomer composition. The hydrocarbon resin may, for example, be a cycloolefin polymer (hereinafter referred to as "resin (A)"), and at least one resin selected from the group consisting of terpene resins, rosin resins, and petroleum resins ( Hereinafter, it is called "resin (B)"), etc., but it is not limited to this.

作為樹脂(A),可為將包含環烯烴系單體之單體成分聚合而成的樹脂。具體而言,可舉出包含環烯烴系單體之單體成分的開環(共)聚合物、使包含環烯烴系單體之單體成分進行加成(共)聚合而成的樹脂等。 The resin (A) may be a resin obtained by polymerizing a monomer component containing a cycloolefin monomer. Specifically, a ring-opening (co)polymer containing a monomer component of a cycloolefin type monomer and a resin obtained by addition (co)polymerization of a monomer component containing a cycloolefin type monomer are mentioned.

作為構成樹脂(A)之單體成分所含的前述環烯烴系單體,可舉出例如降冰片烯、降冰片二烯等的二環物、二環戊二烯、羥基二環戊二烯等的三環物、四環十二烯等的四環物、環戊二烯三聚體等的五環物、四環戊二烯等的七環物、或此等多環物之烷基(甲基、乙基、丙基、丁基等)取代物、烯基(乙烯基等)取代物、亞烷基(亞乙基等)取代物、芳基(苯基、甲苯基、萘基等)取代物等。此等當中,尤以由降冰片烯、四環十二烯、或此等之烷基取代物所成之群中選出的降冰片烯系單體為佳。 Examples of the cycloolefin-based monomer contained in the monomer component constituting the resin (A) include a bicyclic compound such as norbornene and norbornadiene, dicyclopentadiene, and hydroxydicyclopentadiene. a tricyclic substance such as a tricyclic substance or a tetracyclododecene, a pentacyclic substance such as a cyclopentadiene trimer, a heptacyclic substance such as tetracyclopentadiene or an alkyl group of such a polycyclic substance. (methyl, ethyl, propyl, butyl, etc.) substituted, alkenyl (vinyl or the like) substituted, alkylene (ethylene, etc.) substituted, aryl (phenyl, tolyl, naphthyl) Etc.) Substitutes, etc. Among these, a norbornene-based monomer selected from the group consisting of norbornene, tetracyclododecene, or an alkyl substituent thereof is preferred.

構成樹脂(A)的單體成分亦可含有可與上述之環烯烴系單體共聚合的其他的單體,例如,較佳含有烯單體。作為烯單體,可舉出例如乙烯、丙烯、1-丁烯、異 丁烯、1-己烯、α-烯烴等。烯單體可為直鏈狀或支鏈狀。 The monomer component constituting the resin (A) may further contain another monomer copolymerizable with the above cycloolefin-based monomer, and for example, preferably contains an olefin monomer. Examples of the olefin monomer include ethylene, propylene, 1-butene, and the like. Butene, 1-hexene, α-olefin, and the like. The olefin monomer may be linear or branched.

此外,作為構成樹脂(A)的單體成分,基於高耐熱性(低熱分解、熱重量減少性)觀點,較佳含有環烯烴單體。環烯烴單體相對於構成樹脂(A)之單體成分全體的比例較佳為5莫耳%以上,更佳為10莫耳%以上,再佳為20莫耳%以上。又,環烯烴單體相對於構成樹脂(A)之單體成分全體的比例不特別限定,基於溶解性及溶液中的歷時穩定性觀點,較佳為80莫耳%以下,更佳為70莫耳%以下。 Further, the monomer component constituting the resin (A) preferably contains a cycloolefin monomer from the viewpoint of high heat resistance (low thermal decomposition and thermogravimetric reduction). The ratio of the cycloolefin monomer to the entire monomer component constituting the resin (A) is preferably 5 mol% or more, more preferably 10 mol% or more, and still more preferably 20 mol% or more. Further, the ratio of the cycloolefin monomer to the entire monomer component constituting the resin (A) is not particularly limited, and is preferably 80 mol% or less, more preferably 70 mol, from the viewpoint of solubility and stability over time in the solution. Less than the ear.

又,作為構成樹脂(A)的單體成分,亦可含有直鏈狀或支鏈狀的烯單體。烯單體相對於構成樹脂(A)之單體成分全體的比例,基於溶解性及柔軟性觀點較佳為10~90莫耳%,更佳為20~85莫耳%,再佳為30~80莫耳%。 Further, the monomer component constituting the resin (A) may contain a linear or branched olefin monomer. The ratio of the olefin monomer to the entire monomer component constituting the resin (A) is preferably from 10 to 90 mol%, more preferably from 20 to 85 mol%, more preferably from 30 to 85 mol%, based on solubility and flexibility. 80% by mole.

此外,就樹脂(A)而言,在抑制高溫下之氣體的產生方面,較佳為例如使由環烯烴系單體與烯單體所構成之單體成分聚合而成的樹脂等不具有極性基的樹脂。 In addition, in the case of suppressing the generation of a gas at a high temperature, the resin (A) preferably has a polarity such as a resin obtained by polymerizing a monomer component composed of a cycloolefin monomer and an olefin monomer. Base resin.

對於將單體成分聚合時的聚合方法或聚合條件等,不特別限制,只要依據常用方法適當設定即可。 The polymerization method, the polymerization conditions, and the like when the monomer component is polymerized are not particularly limited, and may be appropriately set according to a usual method.

作為可作為樹脂(A)使用的市售品,可舉出例如Polyplastics股份有限公司製「TOPAS」、三井化學股份有限公司製「APEL」、日本ZEON股份有限公司製「ZEONOR」及「ZEONEX」、JSR股份有限公司製 「ARTON」等。 As a commercial product which can be used as the resin (A), for example, "TOPAS" manufactured by Polyplastics Co., Ltd., "APEL" manufactured by Mitsui Chemicals Co., Ltd., "ZEONOR" and "ZEONEX" manufactured by Japan ZEON Co., Ltd., JSR Co., Ltd. "ARTON" and so on.

樹脂(A)的玻璃轉移溫度(Tg)較佳為60℃以上,特佳為70℃以上。樹脂(A)的玻璃轉移溫度若為60℃以上,在層合體暴露於高溫環境時可進一步抑制接著層3的軟化。 The glass transition temperature (Tg) of the resin (A) is preferably 60 ° C or higher, and particularly preferably 70 ° C or higher. When the glass transition temperature of the resin (A) is 60 ° C or more, the softening of the adhesive layer 3 can be further suppressed when the laminate is exposed to a high temperature environment.

樹脂(B)係由萜烯系樹脂、松香系樹脂及石油樹脂所成之群中選出的至少1種樹脂。具體而言,作為萜烯系樹脂,可舉出例如萜烯樹脂、萜烯酚樹脂、改質萜烯樹脂、氫化萜烯樹脂、氫化萜烯酚樹脂等。作為松香系樹脂,可舉出例如松香、松香酯、氫化松香、氫化松香酯、聚合松香、聚合松香酯、改質松香等。作為石油樹脂,可舉出例如脂肪族或芳香族石油樹脂、氫化石油樹脂、改質石油樹脂、脂環族石油樹脂、苯并呋喃-茚石油樹脂等。此等當中,更佳為氫化萜烯樹脂、氫化石油樹脂。 The resin (B) is at least one selected from the group consisting of a terpene resin, a rosin resin, and a petroleum resin. Specifically, examples of the terpene-based resin include a terpene resin, a terpene phenol resin, a modified terpene resin, a hydrogenated terpene resin, and a hydrogenated terpene phenol resin. Examples of the rosin-based resin include rosin, rosin ester, hydrogenated rosin, hydrogenated rosin ester, polymerized rosin, polymerized rosin ester, and modified rosin. Examples of the petroleum resin include aliphatic or aromatic petroleum resins, hydrogenated petroleum resins, modified petroleum resins, alicyclic petroleum resins, and benzofuran-indene petroleum resins. Among these, a hydrogenated terpene resin and a hydrogenated petroleum resin are more preferable.

樹脂(B)的軟化點不特別限定,較佳為80~160℃。樹脂(B)的軟化點若為80℃以上,在層合體暴露於高溫環境時可抑制軟化發生,而不會發生接著不良。另一方面,樹脂(B)的軟化點若為160℃以下,則剝離層合體時的剝離速度良好。 The softening point of the resin (B) is not particularly limited, but is preferably 80 to 160 °C. When the softening point of the resin (B) is 80 ° C or more, the occurrence of softening can be suppressed when the laminate is exposed to a high temperature environment without causing defective defects. On the other hand, when the softening point of the resin (B) is 160 ° C or less, the peeling speed at the time of peeling the laminate is good.

樹脂(B)的重量平均分子量不特別限定,較佳為300~3,000。樹脂(B)的重量平均分子量若為300以上,耐熱性較充分,在高溫環境下排氣量減少。另一方面,樹脂(B)的重量平均分子量若為3,000以下,則剝 離層合體時的剝離速度良好。此外,本實施形態之樹脂(B)的重量平均分子量係指以凝膠滲透層析術(GPC)所測得之以聚苯乙烯換算的分子量。 The weight average molecular weight of the resin (B) is not particularly limited, and is preferably from 300 to 3,000. When the weight average molecular weight of the resin (B) is 300 or more, heat resistance is sufficient, and the amount of exhaust gas is reduced in a high temperature environment. On the other hand, if the weight average molecular weight of the resin (B) is 3,000 or less, peeling The peeling speed at the time of leaving the laminate was good. Further, the weight average molecular weight of the resin (B) of the present embodiment means a molecular weight in terms of polystyrene measured by gel permeation chromatography (GPC).

此外,作為樹脂,亦可使用將樹脂(A)與樹脂(B)混合者。藉由加以混合,耐熱性及剝離速度良好。例如,就樹脂(A)與樹脂(B)的混合比例而言,(A):(B)=80:20~55:45(質量比)因剝離速度、高溫環境時的耐熱性、及柔軟性優良而較佳。 Further, as the resin, a resin (A) and a resin (B) may be used in combination. By mixing, the heat resistance and the peeling speed are good. For example, in the mixing ratio of the resin (A) and the resin (B), (A): (B) = 80: 20 to 55: 45 (mass ratio) due to the peeling speed, heat resistance in a high temperature environment, and softness Excellent and better.

(丙烯酸-苯乙烯系樹脂) (acrylic-styrene resin)

作為熱塑性樹脂,尚可使用丙烯酸-苯乙烯系樹脂。作為丙烯酸-苯乙烯系樹脂,可舉出例如使用苯乙烯或苯乙烯的衍生物、與(甲基)丙烯酸酯等作為單體經共聚合而成的樹脂。 As the thermoplastic resin, an acrylic-styrene resin can also be used. The acrylic-styrene-based resin may, for example, be a resin obtained by copolymerizing a derivative of styrene or styrene or a monomer such as (meth)acrylate.

作為(甲基)丙烯酸酯,可舉出例如由鏈結構構成的(甲基)丙烯酸烷基酯、具有脂肪族環的(甲基)丙烯酸酯、具有芳香族環的(甲基)丙烯酸酯。作為由鏈結構構成的(甲基)丙烯酸烷基酯,可舉出具有碳數15~20之烷基的丙烯酸系長鏈烷基酯、具有碳數1~14之烷基的丙烯酸系烷基酯等。作為丙烯酸系長鏈烷基酯,可舉出烷基為正十五烷基、正十六烷基、正十七烷基、正十八烷基、正十九烷基、正二十烷基等的丙烯酸或甲基丙烯酸之烷基酯。此外,該烷基亦可為支鏈狀。 The (meth) acrylate may, for example, be an alkyl (meth)acrylate composed of a chain structure, a (meth) acrylate having an aliphatic ring, or a (meth) acrylate having an aromatic ring. Examples of the (meth)acrylic acid alkyl ester having a chain structure include an acrylic long-chain alkyl ester having an alkyl group having 15 to 20 carbon atoms, and an acrylic alkyl group having an alkyl group having 1 to 14 carbon atoms. Ester and the like. Examples of the acrylic long-chain alkyl esters include n-pentadecyl groups, n-hexadecyl groups, n-heptadecyl groups, n-octadecyl groups, n-nonadecyl groups, and n-icosyl groups. An alkyl ester of acrylic acid or methacrylic acid. Further, the alkyl group may also be branched.

作為具有碳數1~14之烷基的丙烯酸系烷基 酯,可舉出既有之丙烯酸系接著劑所使用的周知之丙烯酸系烷基酯。可舉出例如由烷基為甲基、乙基、丙基、丁基、2-乙基己基、異辛基、異壬基、異癸基、十二烷基、月桂基、十三烷基等所構成的丙烯酸或甲基丙烯酸之烷基酯。 An acrylic alkyl group having an alkyl group having 1 to 14 carbon atoms The ester may, for example, be a known acrylic alkyl ester used in a conventional acrylic adhesive. For example, an alkyl group is methyl, ethyl, propyl, butyl, 2-ethylhexyl, isooctyl, isodecyl, isodecyl, dodecyl, lauryl, tridecyl An alkyl ester of acrylic acid or methacrylic acid.

作為具有脂肪族環的(甲基)丙烯酸酯,可舉出(甲基)丙烯酸環己酯、(甲基)丙烯酸環戊酯、(甲基)丙烯酸-1-金剛烷酯、(甲基)丙烯酸降冰片酯、(甲基)丙烯酸異冰片酯、(甲基)丙烯酸三環癸酯、(甲基)丙烯酸四環十二酯、(甲基)丙烯酸二環戊酯等,更佳為甲基丙烯酸異冰片酯、(甲基)丙烯酸二環戊酯。 Examples of the (meth) acrylate having an aliphatic ring include cyclohexyl (meth)acrylate, cyclopentyl (meth)acrylate, 1-adamantyl (meth)acrylate, and (methyl). Acrylic acid norbornete ester, isobornyl (meth)acrylate, tricyclodecyl (meth)acrylate, tetracyclododecyl (meth)acrylate, dicyclopentanyl (meth)acrylate, etc., more preferably A Isobornyl acrylate, dicyclopentanyl (meth) acrylate.

作為具有芳香族環的(甲基)丙烯酸酯,不特別限定,作為芳香族環,可舉出例如苯基、苯甲基、甲苯基、二甲苯基、聯苯基、萘基、蒽基、苯氧甲基、苯氧乙基等。又,芳香族環亦可具有碳數1~5之直鏈狀或支鏈狀之烷基。具體而言,較佳為丙烯酸苯氧乙酯。 The (meth) acrylate having an aromatic ring is not particularly limited, and examples of the aromatic ring include a phenyl group, a benzyl group, a tolyl group, a xylyl group, a biphenyl group, a naphthyl group, and a fluorenyl group. Phenoxymethyl, phenoxyethyl and the like. Further, the aromatic ring may have a linear or branched alkyl group having 1 to 5 carbon atoms. Specifically, phenoxyethyl acrylate is preferred.

(馬來醯亞胺系樹脂) (Malay ylide resin)

作為熱塑性樹脂,亦可使用馬來醯亞胺系樹脂。作為馬來醯亞胺系樹脂,可舉出例如將作為單體的N-甲基馬來醯亞胺、N-乙基馬來醯亞胺、N-正丙基馬來醯亞胺、N-異丙基馬來醯亞胺、N-正丁基馬來醯亞胺、N-異丁基馬來醯亞胺、N-二級丁基馬來醯亞胺、N-三級丁基馬來醯亞 胺、N-正戊基馬來醯亞胺、N-正己基馬來醯亞胺、N-正庚基馬來醯亞胺、N-正辛基馬來醯亞胺、N-月桂基馬來醯亞胺、N-十八烷基馬來醯亞胺等具有烷基之馬來醯亞胺、N-環丙基馬來醯亞胺、N-環丁基馬來醯亞胺、N-環戊基馬來醯亞胺、N-環己基馬來醯亞胺、N-環庚基馬來醯亞胺、N-環辛基馬來醯亞胺等具有脂肪族烴基之馬來醯亞胺、N-苯基馬來醯亞胺、N-間甲基苯基馬來醯亞胺、N-鄰甲基苯基馬來醯亞胺、N-對甲基苯基馬來醯亞胺等具有芳基之芳香族馬來醯亞胺等聚合而得的樹脂。 A maleic imine type resin can also be used as the thermoplastic resin. Examples of the maleic imine resin include N-methyl maleimide, N-ethyl maleimide, N-n-propyl maleimide, and N as monomers. -isopropylmaleimide, N-n-butylmaleimide, N-isobutylmaleimide, N-butyl butyl maleimide, N-tertiary butyl Malayia Amine, N-n-pentylmaleimide, N-n-hexylmaleimide, N-n-heptylmaleimide, N-n-octylmaleimide, N-lauryl horse Alkyl-maleimide, N-cyclopropylmaleimide, N-cyclobutylmaleimide, N, such as imine, N-octadecylmaleimide, etc. - Maleic anthracene having an aliphatic hydrocarbon group such as cyclopentylmaleimide, N-cyclohexylmaleimide, N-cycloheptylmaleimide, N-cyclooctylmaleimide or the like Imine, N-phenylmaleimide, N-m-methylphenylmaleimide, N-o-methylphenylmaleimide, N-p-methylphenylmalaine A resin obtained by polymerization of an aromatic maleic imine or the like having an aryl group such as an amine.

舉例而言,可將下述化學式(1)所示之重複單元及下述化學式(2)所示之重複單元的共聚物的環烯烴共聚物作為接著成分的樹脂使用。 For example, a cyclic olefin copolymer of a repeating unit represented by the following chemical formula (1) and a copolymer of a repeating unit represented by the following chemical formula (2) can be used as a resin for the subsequent component.

化學式(2)中,n為0或1~3之整數。 In the chemical formula (2), n is an integer of 0 or 1 to 3.

作為此類環烯烴共聚物,可使用APL 8008T、APL 8009T、及APL 6013T(全為三井化學股份有限公司製)等。 As such a cyclic olefin copolymer, APL 8008T, APL 8009T, and APL 6013T (all manufactured by Mitsui Chemicals, Inc.) and the like can be used.

〔脫模劑〕 [release agent]

一實施形態之接著劑組成物係包含脫模劑。藉由對接著劑組成物摻合脫模劑,可調整接著層3對基板1及支持板2的接著性。由此,可獲得一種可形成:在對基板1進行所欲之處理後,可從基板1容易地剝離支持板2之層合體10的接著劑組成物。 The adhesive composition of one embodiment comprises a release agent. The adhesion of the adhesive layer 3 to the substrate 1 and the support sheet 2 can be adjusted by blending the release agent with the release agent. Thereby, it is possible to obtain an adhesive composition which can easily peel the laminate 10 of the support sheet 2 from the substrate 1 after performing the desired treatment on the substrate 1.

作為脫模劑,可舉出例如矽酮(Silicone)。更具體而言,對於矽酮可舉出矽油,具體而言可舉出純矽油、改質矽油及改質矽油的硬化物等。 The mold release agent may, for example, be Silicone. More specifically, the fluorene ketone may, for example, be eucalyptus oil, and specific examples thereof include a pure eucalyptus oil, a modified eucalyptus oil, and a cured product of the modified eucalyptus oil.

(純矽油) (pure oyster sauce)

作為純矽油,可舉出例如二甲基矽油、甲基苯基矽油及甲基氫矽油等。就此等純矽油,作為其一例,可舉出信越化學工業公司製商品,可列舉例如KF96-10、KF96-100、KF96-1000、KF96H-10000、KF96H-12500及KF96H-10000等的二甲基矽油;KF50-100、KF54及KF56等的甲基苯基矽油;KF99及KF9901等的甲基氫矽油。 Examples of the pure eucalyptus oil include dimethyl hydrazine oil, methyl phenyl hydrazine oil, and methylhydroquinone oil. As an example of such a pure eucalyptus oil, a product manufactured by Shin-Etsu Chemical Co., Ltd. may be mentioned, and examples thereof include dimethyl groups such as KF96-10, KF96-100, KF96-1000, KF96H-10000, KF96H-12500, and KF96H-10000. Emu oil; methyl phenyl hydrazine oil such as KF50-100, KF54 and KF56; methyl hydroquinone oil such as KF99 and KF9901.

(改質矽油) (modified oyster sauce)

改質矽油係藉由對二甲基矽酮之末端及側鏈的至少一部分導入官能基而改質的矽酮。亦即,改質矽油係屬兩末端型、單末端型、側鏈型及側鏈兩末端型之改質矽酮任一種。 The modified eucalyptus oil is an fluorenone modified by introducing a functional group to at least a part of the terminal and side chains of dimethyl fluorenone. That is, the modified eucalyptus oil is a modified ketone which is a two-terminal type, a single-end type, a side chain type, and a side chain type.

作為改質矽油,可舉出例如下述化學式(3)至(6)所示之具備聚二甲基矽氧烷骨架的化合物: The modified eucalyptus oil may, for example, be a compound having a polydimethylsiloxane skeleton represented by the following chemical formulas (3) to (6):

化學式(3)及(4)中,m為1以上之整數,更佳為10以上且1000以下之整數,再佳為20以上且500以下之整數。又,化學式(5)及(6)中,p為1以上之整數,更佳為10以上且1000以下之整數,再佳為20以上且500以下之整數。q為1以上之整數,更佳為10以上且1000以下之整數,再佳為20以上且500以下之整數。再者,化學式(3)~(6)中,R為可導入甲醇基、環氧基、胺基、丙烯醯基、甲基丙烯醯基、羧基、酚基、巰基、烷基、芳烷基、二醇、矽醇基、聚醚、羧酸酐、高級脂肪酸酯、高級脂肪酸醯胺、及甲基苯乙烯基的官能基。又,當導入矽醇基時,R可為羥基。 In the chemical formulae (3) and (4), m is an integer of 1 or more, more preferably an integer of 10 or more and 1,000 or less, and still more preferably an integer of 20 or more and 500 or less. Further, in the chemical formulae (5) and (6), p is an integer of 1 or more, more preferably an integer of 10 or more and 1,000 or less, and still more preferably an integer of 20 or more and 500 or less. q is an integer of 1 or more, more preferably an integer of 10 or more and 1000 or less, and more preferably an integer of 20 or more and 500 or less. Further, in the chemical formulae (3) to (6), R is a methyl group, an epoxy group, an amine group, an acryl group, a methacryl group, a carboxyl group, a phenol group, a decyl group, an alkyl group or an aralkyl group. Functional groups of diols, sterol groups, polyethers, carboxylic anhydrides, higher fatty acid esters, higher fatty acid decylamines, and methylstyryl groups. Further, when a sterol group is introduced, R may be a hydroxyl group.

此外,當R為可導入聚醚的官能基時,R可用以下化學式(7)表示:【化3】-R’-(C2H4O)a-(C3H6O)b-R”…(7) Further, when R is a functional group into which a polyether can be introduced, R can be represented by the following chemical formula (7): [Chemical 3]-R'-(C 2 H 4 O) a -(C 3 H 6 O) b -R "...(7)

化學式(7)中,R’為例如伸烷基等的有機基,R”為氫原子、或可經芳基、或者環烷基取代之直鏈狀或分枝狀的烷基等。又,就a及b,a為0以上且30以下之整數,b為0以上且30以下之整數,並滿足60≧a+b≧1之條件。 In the chemical formula (7), R' is an organic group such as an alkylene group, and R' is a hydrogen atom or a linear or branched alkyl group which may be substituted by an aryl group or a cycloalkyl group. In a and b, a is an integer of 0 or more and 30 or less, and b is an integer of 0 or more and 30 or less, and satisfies the condition of 60≧a+b≧1.

又,改質矽油的官能基當量不特別限定,為例如1g/mol以上且100000g/mol以下,係以較理想為10g/mol以上且5000g/mol以下為佳。 In addition, the functional group equivalent of the modified eucalyptus oil is not particularly limited, and is preferably, for example, 1 g/mol or more and 100000 g/mol or less, more preferably 10 g/mol or more and 5,000 g/mol or less.

又,改質矽酮在經例如甲醇基、酚基及聚醚等可導入羥基之官能基改質時,該改質矽酮的羥基價較佳為20mgKOH/g以上且500mgKOH/g以下。 Further, when the modified fluorenone is modified with a functional group capable of introducing a hydroxyl group such as a methanol group, a phenol group or a polyether, the valence of the hydroxy group of the modified fluorenone is preferably 20 mgKOH/g or more and 500 mgKOH/g or less.

就此等改質矽酮的油,作為其一例,可舉出信越化學工業公司製商品,可列舉例如X-22-4039、X-22-4015、KF6000、KF6001、KF6002、KF6003、及X-22-170DX等的甲醇改質矽油;X-22-163A、X-22-163B、X-22-163C、X-22-2000、X-22-4741、KF1005及X-22-169B、X-22-173DX等的環氧基改質矽油;KF393、KF865、X-22-9409、X-22-3939A及X-22-161B等的胺基改質矽油;X-22-2445及X-22-1602等的丙烯酸改質矽 油;X-22-164B及KF2012等的甲基丙烯酸改質矽油;X-22-3701E及X-22-X-22-162C等的羧基改質矽油;KF2200等的酚改質矽油;KF2001及X-22-167B等的巰基改質矽油;KF414及KF4003等的烷基改質矽油;KF410及X-22-1877等的芳烷基改質矽油;X-22-176DX及X-22-176GX-A等的二醇改質矽油;X-22-4272、KF945、KF6011、KF6123及X-22-2516等的聚醚改質矽油;X-21-5841及KF9701等的矽醇基末端矽油。 For example, X-22-4039, X-22-4015, KF6000, KF6001, KF6002, KF6003, and X-22 may be mentioned as an example of the oil of the fluorenone. -170DX and other methanol modified eucalyptus oil; X-22-163A, X-22-163B, X-22-163C, X-22-2000, X-22-4741, KF1005 and X-22-169B, X-22 Epoxy modified oleic oils such as -173DX; amine modified eucalyptus oils such as KF393, KF865, X-22-9409, X-22-3939A and X-22-161B; X-22-2445 and X-22- 1602 and other acrylic modified 矽 Oil; methacrylic acid modified eucalyptus oil such as X-22-164B and KF2012; carboxy modified eucalyptus oil such as X-22-3701E and X-22-X-22-162C; phenol modified eucalyptus oil such as KF2200; KF2001 and X-22-167B and other sulfhydryl modified eucalyptus oil; KF414 and KF4003 and other alkyl modified eucalyptus oil; KF410 and X-22-1877 and other aralkyl modified eucalyptus oil; X-22-176DX and X-22-176GX -A diol modified oleic oil; X-22-4272, KF945, KF6011, KF6123, X-22-2516, etc. polyether modified eucalyptus oil; X-21-5841 and KF9701 and other sterol based terminal eucalyptus oil.

改質矽油可依據接著劑組成物所使用之熱塑性樹脂的種類來適當選擇。例如,若使用烴樹脂及彈性體作為熱塑性樹脂時,較佳將藉由導入甲醇基、環氧基、胺基、丙烯醯基、甲基丙烯醯基、羧基、酚基、巰基、矽醇基、二醇及聚醚等高極性之官能基而改質的矽油作為脫模劑使用。 The modified eucalyptus oil can be appropriately selected depending on the kind of the thermoplastic resin used in the adhesive composition. For example, when a hydrocarbon resin and an elastomer are used as the thermoplastic resin, it is preferred to introduce a methanol group, an epoxy group, an amine group, an acryl group, a methacryl group, a carboxyl group, a phenol group, a decyl group, or a decyl group. An eucalyptus oil modified with a highly polar functional group such as a diol or a polyether is used as a release agent.

以烴樹脂及氫化苯乙烯彈性體為首的彈性體係具備低極性的化學結構。因此,若摻合導入有高極性之官能基的改質矽油,則可使該改質矽油更適當地向接著層3的表面滲出。從而,可獲得能更適當地調整第1圖之(a)所示之層合體10的接著層3與基板1之界面、及接著層3與支持板2之界面兩者的接著性的接著劑組成物。 The elastic system including hydrocarbon resin and hydrogenated styrene elastomer has a low polarity chemical structure. Therefore, when the modified eucalyptus oil having a functional group having a high polarity is blended, the modified eucalyptus oil can be more appropriately ooze out to the surface of the adhesive layer 3. Therefore, an adhesive capable of more appropriately adjusting the adhesion between the interface between the adhesive layer 3 of the laminate 10 shown in FIG. 1(a) and the substrate 1 and the interface between the adhesive layer 3 and the support sheet 2 can be obtained. Composition.

亦即,若摻合導入有高極性之官能基的改質矽油,則可適當調整以烴樹脂及氫化苯乙烯彈性體為首的彈性體等具備高耐熱性之接著劑組成物的接著性。 In other words, when the modified eucalyptus oil having a highly polar functional group is blended, the adhesiveness of the adhesive composition having high heat resistance such as an elastomer such as a hydrocarbon resin or a hydrogenated styrene elastomer can be appropriately adjusted.

又,作為脫模劑,亦可使用二甲基矽油、以 及導入有烷基、苯基及芳烷基等低極性之官能基的改質矽油。亦即,此等二甲基矽油及改質矽油等的矽酮,只要依據接著劑組成物所使用之熱塑性樹脂及塑化劑等的極性等適當選擇使用即可。 Further, as the release agent, dimethyl hydrazine oil may also be used. And a modified eucalyptus oil having a low polarity functional group such as an alkyl group, a phenyl group or an aralkyl group. In other words, the fluorenone such as the dimethyl hydrazine oil and the modified eucalyptus oil may be appropriately selected and used depending on the polarity of the thermoplastic resin, the plasticizer, and the like used in the adhesive composition.

一實施形態之接著劑組成物中,二甲基矽油或改質矽油在25℃下的動力黏度較佳為20mm2/s以上,更佳為40mm2/s以上,最佳為60mm2/s以上。二甲基矽油或改質矽油在25℃下的動力黏度若為20mm2/s以上,可防止矽油蒸發。因此,對於在例如160℃以上的高溫下經過處理的層合體,亦可使用一實施形態之接著劑組成物。 In the adhesive composition of one embodiment, the dynamic viscosity of the dimethyl hydrazine oil or the modified eucalyptus oil at 25 ° C is preferably 20 mm 2 /s or more, more preferably 40 mm 2 /s or more, and most preferably 60 mm 2 /s. the above. If the kinetic viscosity of dimethyl hydrazine oil or modified eucalyptus oil at 25 ° C is 20 mm 2 /s or more, the eucalyptus oil can be prevented from evaporating. Therefore, an adhesive composition of one embodiment can also be used for the laminate which is treated at a high temperature of, for example, 160 ° C or higher.

此外,二甲基矽油或改質矽油只要混於熱塑性樹脂中即可,不予限定,惟宜使用25℃下的動力黏度為1,000,000mm2/s以下者。若為25℃下的動力黏度為1,000,000mm2/s以下的二甲基矽油或改質矽油,則可適當地混於熱塑性樹脂中,而能夠調整接著層的接著性。 Further, the dimethyl hydrazine oil or the modified eucalyptus oil is not particularly limited as long as it is mixed in the thermoplastic resin, and it is preferable to use a dynamic viscosity at 25 ° C of 1,000,000 mm 2 /s or less. When it is a dimethyl hydrazine oil or a modified eucalyptus oil having a dynamic viscosity of 1,000,000 mm 2 /s or less at 25 ° C, it can be appropriately mixed with a thermoplastic resin, and the adhesion of the adhesive layer can be adjusted.

又,二甲基矽油或改質矽油相對於熱塑性樹脂的總量的摻合量,只要依據熱塑性樹脂的種類、熱塑性樹脂的種類及脫模劑的種類適當調整即可。因此,雖不予限定,惟例如脫模劑相對於熱塑性樹脂的總量,較佳以0.01重量%以上且10重量%以下的範圍內摻合,更佳以0.1重量%以上且5重量%以下的範圍內摻合,最佳以1重量%以上且3重量%以下的範圍內摻合。二甲基矽油或改質矽油,相對於熱塑性樹脂的總量若以0.01重量%以上且10重量%以下的範圍內摻合,則可適當地貼合基板1及支 持板2。又,可獲得一種可形成:縱使未在支持板2形成分離層,仍可從基板1容易地剝離支持板2之層合體的接著劑組成物。 In addition, the blending amount of the dimethyl hydrazine oil or the modified eucalyptus oil with respect to the total amount of the thermoplastic resin may be appropriately adjusted depending on the type of the thermoplastic resin, the type of the thermoplastic resin, and the type of the releasing agent. Therefore, the release agent is preferably blended in a range of 0.01% by weight or more and 10% by weight or less, more preferably 0.1% by weight or more and 5% by weight or less, based on the total amount of the thermoplastic resin. The blending within the range is preferably in the range of 1% by weight or more and 3% by weight or less. When the dimethyl hydrazine oil or the modified eucalyptus oil is blended in a range of 0.01% by weight or more and 10% by weight or less based on the total amount of the thermoplastic resin, the substrate 1 and the support can be appropriately bonded. Hold the board 2. Further, an adhesive composition which can form a laminate in which the support sheet 2 can be easily peeled off from the substrate 1 even without forming a separation layer on the support sheet 2 can be obtained.

又,二甲基矽油及改質矽油等的脫模劑更佳使用具有接近熱塑性樹脂及溶劑的混合物之比重的比重者。從而,可改良脫模劑對接著劑組成物的分散性。 Further, a mold release agent such as dimethyl hydrazine oil or modified eucalyptus oil is preferably used in a proportion of a specific gravity close to a mixture of a thermoplastic resin and a solvent. Thereby, the dispersibility of the release agent to the adhesive composition can be improved.

(改質矽油的硬化物) (modified hardened oil of oyster sauce)

脫模劑亦可使用改質矽油的硬化物。藉由將改質矽油的硬化物添加至接著劑組成物,亦可適當地調整接著劑組成物的接著性。 A hardened material of the modified eucalyptus oil can also be used as the release agent. The adhesion of the adhesive composition can also be appropriately adjusted by adding the cured product of the modified eucalyptus oil to the adhesive composition.

改質矽油的硬化物可舉出使導入至改質矽油的官能基與其他的改質矽油的官能基反應而得者。可舉出例如使胺改質矽油或巰基改質矽油等與環氧基改質矽油反應而得者。 The cured product of the modified eucalyptus oil may be obtained by reacting a functional group introduced into the modified eucalyptus oil with a functional group of another modified eucalyptus oil. For example, an amine-modified eucalyptus oil or a thiol-modified eucalyptus oil may be reacted with an epoxy-modified eucalyptus oil.

另外,改質矽油的硬化物可舉出使例如觸媒硬化型或光硬型矽油反應而得的硬化物。觸媒硬化型矽油可舉出例如信越化學工業股份有限公司製KF-705F-PS、KS-705F-PS-1及KS-770-PL-3等。又,光硬型矽油可舉出例如信越化學工業股份有限公司製KS-720及KS744-PL3。 Further, the cured product of the modified eucalyptus oil may be a cured product obtained by reacting, for example, a catalyst hardening type or a light hard type eucalyptus oil. Examples of the catalyst hardening type eucalyptus oils include KF-705F-PS, KS-705F-PS-1, and KS-770-PL-3 manufactured by Shin-Etsu Chemical Co., Ltd. Further, examples of the hard-type eucalyptus oil include KS-720 and KS744-PL3 manufactured by Shin-Etsu Chemical Co., Ltd.

再者,就改質矽油的硬化物而言,亦可使例如甲醇改質矽油、胺基改質矽油等導入有具有活性氫之官能基的改質矽油與異氰酸酯反應而得到硬化物後,將其作 為脫模劑使用。 Further, in the case of the cured product of the modified eucalyptus oil, a modified eucalyptus oil having a functional group having an active hydrogen introduced, such as a methanol modified eucalyptus oil or an amine modified eucalyptus oil, may be reacted with an isocyanate to obtain a cured product. Its work Used as a release agent.

〔其他的成分〕 [other ingredients]

接著劑組成物,除熱塑性樹脂及脫模劑外,在不損及本質上之特性的範圍內,亦可進一步包含具混和性的其他物質。例如,可進一步使用供改良接著劑之性能的加成性樹脂、塑化劑、接著輔助劑、安定劑、著色劑、熱聚合抑制劑及界面活性劑等慣用的各種添加劑。又,接著劑組成物亦可包含稀釋溶劑。 The composition of the subsequent composition may further contain other substances having a miscibility, in addition to the thermoplastic resin and the release agent, within a range not impairing the essential properties. For example, various conventional additives such as an additive resin, a plasticizer, an auxiliary agent, a stabilizer, a colorant, a thermal polymerization inhibitor, and a surfactant for improving the performance of the adhesive can be further used. Further, the adhesive composition may also contain a diluent solvent.

(稀釋溶劑) (diluted solvent)

稀釋溶劑係用來稀釋接著劑組成物。藉此,可將接著劑組成物調整成適於塗佈用之條件的黏度。 The dilution solvent is used to dilute the adhesive composition. Thereby, the adhesive composition can be adjusted to a viscosity suitable for the conditions for coating.

作為稀釋溶劑,可舉出例如己烷、庚烷、辛烷、壬烷、甲基辛烷、癸烷、十一烷、十二烷、十三烷等的直鏈狀烴;碳數4至15之支鏈狀烴,例如環己烷、環庚烷、環辛烷、萘、十氫萘、四氫萘等的環狀烴、對薄荷烷、鄰薄荷烷、間薄荷烷、二苯基薄荷烷、1,4-萜二醇、1,8-萜二醇、冰片烷、降冰片烷、蒎烷、側柏烷、蒈烷、長葉烯、香葉醇、橙花醇、沉香醇、檸檬醛、香茅醇、薄荷醇、異薄荷醇、新薄荷醇、α-萜品醇、β-萜品醇、γ-萜品醇、萜品-1-醇、萜品-4-醇、乙酸二氫萜品酯、1,4-桉油醇、1,8-桉油醇、龍腦、香芹酮、紫羅蘭酮、側柏酮、樟腦、d-檸檬烯、l-檸檬烯、雙戊烯等的萜烯系溶劑;γ- 丁內酯等的內酯類;丙酮、甲基乙基酮、環己酮(CH)、甲基正戊基酮、甲基異戊基酮、2-庚酮等的酮類;乙二醇、二乙二醇、丙二醇、二丙二醇等的多元醇類;乙二醇單乙酸酯、二乙二醇單乙酸酯、丙二醇單乙酸酯、或二丙二醇單乙酸酯等具有酯鍵之化合物、前述多元醇類或前述具有酯鍵之化合物的單甲醚、單乙醚、單丙醚、單丁醚等的單烷基醚或單苯醚等具有醚鍵之化合物等的多元醇類的衍生物(此等當中,較佳為丙二醇單甲醚乙酸酯(PGMEA)、丙二醇單甲醚(PGME));二噁烷等的環醚類、或乳酸甲酯、乳酸乙酯(EL)、乙酸甲酯、乙酸乙酯、乙酸丁酯、甲氧基乙酸丁酯、丙酮酸甲酯、丙酮酸乙酯、甲氧基丙酸甲酯、乙氧基丙酸乙酯等的酯類;苯甲醚、乙基苯甲醚、甲苯基甲醚、二苯醚、二苯甲醚、苯乙醚、丁基苯基醚等的芳香族系有機溶劑等。 The diluent solvent may, for example, be a linear hydrocarbon such as hexane, heptane, octane, decane, methyl octane, decane, undecane, dodecane or tridecane; carbon number 4 to a branched hydrocarbon of 15, for example, a cyclic hydrocarbon such as cyclohexane, cycloheptane, cyclooctane, naphthalene, decahydronaphthalene or tetrahydronaphthalene, p-menthane, o-menthane, metamenthane, diphenyl. Mentane, 1,4-decanediol, 1,8-nonanediol, borneol, norbornane, decane, oxane, decane, longene, geraniol, nerol, linalool , citral, citronellol, menthol, isomenthol, neomenthol, alpha-terpineol, beta-terpineol, gamma-terpineol, steroid-1-ol, steroid-4-ol , dihydrofurfuryl acetate, 1,4-decyl oleyl alcohol, 1,8-nonyl oleyl alcohol, borneol, carvone, ionone, flavonoids, camphor, d-limonene, l-limonene, dipentane Terpene solvent such as ene; γ- Lactones such as butyrolactone; ketones such as acetone, methyl ethyl ketone, cyclohexanone (CH), methyl n-amyl ketone, methyl isoamyl ketone, 2-heptanone; Polyols such as diethylene glycol, propylene glycol, dipropylene glycol, etc.; ethylene glycol monoacetate, diethylene glycol monoacetate, propylene glycol monoacetate, or dipropylene glycol monoacetate, etc. a polyhydric alcohol such as a compound, a polyhydric alcohol or a monomethyl ether of a compound having an ester bond, a monoalkyl ether such as monoethyl ether, monopropyl ether or monobutyl ether, or a compound having an ether bond such as monophenyl ether. Derivatives (such as propylene glycol monomethyl ether acetate (PGMEA), propylene glycol monomethyl ether (PGME)); cyclic ethers such as dioxane, or methyl lactate or ethyl lactate (EL) ), esters of methyl acetate, ethyl acetate, butyl acetate, butyl methoxyacetate, methyl pyruvate, ethyl pyruvate, methyl methoxypropionate, ethyl ethoxy propionate, etc. An aromatic organic solvent such as anisole, ethylanisole, tolylmethyl ether, diphenyl ether, diphenyl ether, phenethyl ether or butylphenyl ether.

<層合體10> <Layer 10>

利用第1圖之(a),對本發明一實施形態之層合體10更詳細加以說明。如第1圖所示,層合體10係將基板1、及支持基板1之支持板2經由使用本發明一實施形態之接著劑組成物所形成的接著層3貼合而成。 The laminate 10 according to an embodiment of the present invention will be described in more detail with reference to Fig. 1(a). As shown in Fig. 1, the laminate 10 is obtained by laminating the substrate 1 and the support sheet 2 of the support substrate 1 via the adhesive layer 3 formed using the adhesive composition of one embodiment of the present invention.

對層合體10之基板1進行所欲之處理。對於基板1,作為一例,係利用研磨機等進行薄化處理,使其成為25μm~150μm的厚度。又,將基板1削薄至所欲之厚度後,進行光微影處理等,而於基板1形成電路元件等。 亦即,對一實施形態之層合體10施力或加熱,均可調整包含脫模劑之接著層3的接著性,俾可使基板1適當地密接於支持板2。 The substrate 1 of the laminate 10 is subjected to a desired treatment. As an example, the substrate 1 is thinned by a polishing machine or the like to have a thickness of 25 μm to 150 μm. Moreover, after the substrate 1 is thinned to a desired thickness, photolithography or the like is performed, and a circuit element or the like is formed on the substrate 1. That is, by applying force or heating to the laminate 10 of one embodiment, the adhesion of the adhesive layer 3 including the release agent can be adjusted, and the substrate 1 can be appropriately adhered to the support sheet 2.

又,層合體10縱使未具備分離層,於所欲之處理後,仍可從基板1容易地剝離支持板2。因此,無需如具備分離層之層合體般考量分離層的耐藥品及密接性等,即可對基板1進行所欲之處理。 Further, even if the laminate 10 is not provided with the separation layer, the support sheet 2 can be easily peeled off from the substrate 1 after the desired treatment. Therefore, it is not necessary to consider the chemical resistance and adhesion of the separation layer as in the case of the laminate having the separation layer, and the substrate 1 can be subjected to a desired treatment.

此外,分離層係指設於層合體之支持體與接著層之間的層,亦即由例如藉由電漿CVD法所形成之氟碳膜等的有機膜或金屬膜等的無機膜所構成的層。分離層可藉由吸收光而變質,使強度或接著性降低,藉以從基板剝離支持體。 In addition, the separation layer is a layer provided between the support of the laminate and the adhesive layer, that is, an organic film such as a fluorocarbon film formed by a plasma CVD method or an inorganic film such as a metal film. Layer. The separation layer can be deteriorated by absorbing light to lower the strength or adhesion, thereby peeling off the support from the substrate.

〔基板1〕 [Substrate 1]

基板1係經由接著層3貼合於支持板2。作為基板1,矽晶圓基板不予限定,可使用陶瓷基板、薄膜基板、可撓式基板等任意之基板。 The substrate 1 is bonded to the support plate 2 via the adhesive layer 3 . As the substrate 1, the germanium wafer substrate is not limited, and any substrate such as a ceramic substrate, a thin film substrate, or a flexible substrate can be used.

〔支持板2〕 [Support Board 2]

支持板(支持體)2為用以支持基板1的支持體,係經由接著層3貼合於基板1。因此,作為支持板2,只要在基板1的薄化、運送、封裝等程序時,具有供防止基板1之破損或變形所需的強度即可。基於以上觀點,作為支持板2,可舉出由玻璃、矽、丙烯酸系樹脂構成者等。 The support plate (support) 2 is a support for supporting the substrate 1 and is bonded to the substrate 1 via the adhesive layer 3 . Therefore, the support plate 2 may have strength required to prevent breakage or deformation of the substrate 1 when the substrate 1 is thinned, transported, or packaged. From the above viewpoints, examples of the support plate 2 include glass, enamel, and acrylic resin.

〔接著層3〕 [Next layer 3]

其為用以貼合基板1及支持板2的層,係使用本發明一實施形態之接著劑組成物所形成。接著層3宜依據接著劑組成物的塗佈方法及接著層3的膜厚等,藉由稀釋溶劑調出接著劑組成物的適當黏度而形成。 This is a layer for bonding the substrate 1 and the support sheet 2, and is formed using the adhesive composition of one embodiment of the present invention. Next, the layer 3 is preferably formed by adjusting the appropriate viscosity of the adhesive composition by diluting the solvent according to the coating method of the adhesive composition and the film thickness of the adhesive layer 3.

接著層3可藉由例如旋轉塗佈、浸漬、輥刀、噴射塗佈、狹縫塗佈等方法,將接著劑組成物塗佈於基板1或支持板2而形成。 Next, the layer 3 can be formed by applying the adhesive composition to the substrate 1 or the support sheet 2 by, for example, spin coating, dipping, roll knives, spray coating, slit coating, or the like.

接著層3的厚度只要依據貼合對象物之基板1及支持板2的種類、對貼合後之基板1所實施的處理等適當設定即可。於此,接著層3的厚度較佳處於10μm以上且150μm以下的範圍內,更佳處於15μm以上且100μm以下的範圍內。 The thickness of the layer 3 may be appropriately set depending on the type of the substrate 1 and the support sheet 2 to be bonded, the treatment to be performed on the bonded substrate 1 and the like. Here, the thickness of the subsequent layer 3 is preferably in the range of 10 μm or more and 150 μm or less, more preferably in the range of 15 μm or more and 100 μm or less.

<第1實施形態之剝離方法> <Peeling method of the first embodiment>

利用第1圖,對一實施形態(第1實施形態)之剝離方法更詳細加以說明。本實施形態之剝離方法係包含去除本發明一實施形態之層合體10之接著層3的外周部的至少一部分的前處理步驟(第1圖之(a)及(b))、及從層合體10之基板1剝離支持板2的剝離步驟(第1圖之(c))。 The peeling method of one embodiment (first embodiment) will be described in more detail with reference to Fig. 1 . The peeling method of the present embodiment includes a pretreatment step (Figs. 1(a) and (b)) for removing at least a part of the outer peripheral portion of the adhesive layer 3 of the laminate 10 according to the embodiment of the present invention, and a laminate. The substrate 1 of 10 peels off the peeling step of the support sheet 2 (Fig. 1 (c)).

藉此,在前處理步驟中,可使在剝離步驟中對層合體10施加的力集中於層合體10中去除掉接著層3 的部分。從而,在剝離步驟中縱未對層合體10施加極大的力仍可從基板1剝離支持板2。 Thereby, in the pre-treatment step, the force applied to the laminate 10 in the peeling step can be concentrated in the laminate 10 to remove the adhesive layer 3 part. Thereby, the support plate 2 can be peeled off from the substrate 1 without applying a great force to the laminate 10 in the peeling step.

因此,根據本實施形態之剝離方法,無需在層合體10設置藉由吸收光而變質的分離層。 Therefore, according to the peeling method of the present embodiment, it is not necessary to provide the separator 10 with a separation layer which is deteriorated by absorbing light.

又,如第1圖之(d)及(e)所示,在本實施形態之剝離方法中,在剝離步驟後,係包含從剝離掉支持板2之基板1剝離接著層3的接著層剝離步驟。 Further, as shown in (d) and (e) of Fig. 1, in the peeling method of the present embodiment, after the peeling step, the peeling of the adhesive layer from the substrate 1 from which the support sheet 2 is peeled off is peeled off. step.

藉此,可從剝離掉支持板2之基板1適當地去除接著層3。 Thereby, the adhesive layer 3 can be appropriately removed from the substrate 1 from which the support sheet 2 is peeled off.

〔前處理步驟〕 [pre-processing step]

前處理步驟係以層合體10之基板1位於底面側的方式固定層合體10來進行(第1圖之(a))。層合體的固定,作為其一例,宜藉由具備多孔性部的基臺(未圖示)來進行。 The pretreatment step is performed by fixing the laminate 10 so that the substrate 1 of the laminate 10 is located on the bottom surface side (Fig. 1(a)). The fixing of the laminate is preferably carried out by a base (not shown) having a porous portion as an example.

如第1圖之(b)所示,在本實施形態的前處理步驟中,係對層合體10之接著層3的外周部分的至少一部分插入插入構件,例如刮刀20。藉此,去除接著於支持板2之接著層3的一部分。 As shown in FIG. 1(b), in the pre-processing step of the present embodiment, at least a part of the outer peripheral portion of the adhesive layer 3 of the laminate 10 is inserted into an insert member such as a doctor blade 20. Thereby, a part of the adhesive layer 3 following the support plate 2 is removed.

刮刀20較佳向如第1圖之(b)所示之層合體10的支持板2與接著層3的界面附近處插入。又,對接著層3插入刮刀20所達的深度不予限定,較佳為距接著層3之外周部分的端部至少2mm以上,更佳為2mm以上且10mm以下。 The doctor blade 20 is preferably inserted into the vicinity of the interface between the support plate 2 and the adhesive layer 3 of the laminate 10 shown in Fig. 1(b). Further, the depth to which the doctor blade 20 is inserted into the adhesive layer 3 is not limited, and is preferably at least 2 mm or more from the end portion of the outer peripheral portion of the adhesive layer 3, more preferably 2 mm or more and 10 mm or less.

其次,對藉由刮刀20去除掉接著層3的部分供給剝離溶劑S。藉此,可降低層合體10中去除掉接著層3的一部分之部分的接著性。 Next, the stripping solvent S is supplied to the portion of the subsequent layer 3 which is removed by the doctor blade 20. Thereby, the adhesion of the portion of the laminate 10 from which a part of the subsequent layer 3 is removed can be reduced.

在前處理步驟中,對層合體10中經去除接著層3之部分所供給之剝離溶劑S的量只要依據層合體的大小等適當調整即可,不予限定,惟只要將至少10ml的量的剝離溶劑S供給至經去除接著層3的部分即可,更佳為只要將10ml以上且50ml以下之範圍內的量的剝離溶劑S供給至經去除接著層3的部分即可。藉由將至少10ml的剝離溶劑S供給至經去除接著層3的部分,可更適當地降低接著層3的接著性。此外,剝離溶劑S對接著層3的供給可藉由噴霧噴嘴、分配噴嘴及雙流體噴嘴等周知之手段來進行。 In the pre-treatment step, the amount of the stripping solvent S supplied to the portion of the laminate 10 through which the layer 3 is removed may be appropriately adjusted depending on the size of the laminate or the like, and is not limited, but may be at least 10 ml. The stripping solvent S may be supplied to the portion from which the adhesive layer 3 is removed, and it is more preferable that the stripping solvent S in an amount of 10 ml or more and 50 ml or less is supplied to the portion from which the adhesive layer 3 is removed. By supplying at least 10 ml of the stripping solvent S to the portion from which the subsequent layer 3 is removed, the adhesion of the adhesive layer 3 can be more appropriately lowered. Further, the supply of the peeling solvent S to the adhesive layer 3 can be carried out by a known means such as a spray nozzle, a dispensing nozzle, and a two-fluid nozzle.

在前處理步驟中,只要對接著層3供給剝離溶劑S至可降低經去除接著層3之部分的接著性的程度即可。亦即,對層合體供給剝離溶劑至可從基板剝離支持板,而無需將接著層溶解。 In the pretreatment step, the release solvent S may be supplied to the adhesive layer 3 to such an extent that the adhesion of the portion from which the adhesive layer 3 is removed can be reduced. That is, the release solvent is supplied to the laminate until the support sheet can be peeled off from the substrate without dissolving the adhesive layer.

(剝離溶劑) (stripping solvent)

剝離溶劑為在前處理步驟中對層合體10中經去除接著層3之部分所供給的溶劑,係用以降低接著層3的接著性。剝離溶劑只要依據接著層3所含之熱塑性樹脂及脫模劑的種類適當選擇即可,不予限定,惟可使用例如前述之稀釋溶劑、或以下所列舉的溶劑。 The stripping solvent is a solvent supplied to the portion of the laminate 10 from which the layer 3 is removed in the pretreatment step to reduce the adhesion of the layer 3. The release solvent is not particularly limited as long as it is appropriately selected depending on the type of the thermoplastic resin and the release agent contained in the adhesive layer 3, and for example, the above-mentioned diluent solvent or the solvent listed below can be used.

剝離溶劑可舉出例如甲醇、乙醇、1-丙醇、2-丙醇、1-丁醇及2-丁醇等的醇類;γ-丁內酯等的內酯類;丙酮、甲基乙基酮(MEK)、環己酮(CH)、甲基正戊基酮、甲基異戊基酮、2-庚酮等的酮類;乙二醇、二乙二醇、丙二醇、二丙二醇等的多元醇類;乙二醇單乙酸酯、二乙二醇單乙酸酯、丙二醇單乙酸酯、或二丙二醇單乙酸酯等具有酯鍵之化合物、前述多元醇類或前述具有酯鍵之化合物的單甲醚、單乙醚、單丙醚、單丁醚等的單烷基醚或單苯醚等具有醚鍵之化合物等的多元醇類的衍生物(此等當中,較佳為丙二醇單甲醚乙酸酯(PGMEA)、丙二醇單甲醚(PGME));二噁烷等的環醚類、或乳酸甲酯、乳酸乙酯(EL)、乙酸甲酯、乙酸乙酯、乙酸丁酯、甲氧基乙酸丁酯、丙酮酸甲酯、丙酮酸乙酯、甲氧基丙酸甲酯、乙氧基丙酸乙酯等的酯類;苯甲醚、乙基苯甲醚、甲苯基甲醚、二苯醚、二苯甲醚、苯乙醚、丁基苯基醚等的芳香族系有機溶劑等。 Examples of the release solvent include alcohols such as methanol, ethanol, 1-propanol, 2-propanol, 1-butanol, and 2-butanol; lactones such as γ-butyrolactone; acetone and methyl ethyl Ketones such as ketone (MEK), cyclohexanone (CH), methyl n-amyl ketone, methyl isoamyl ketone, 2-heptanone, etc.; ethylene glycol, diethylene glycol, propylene glycol, dipropylene glycol, etc. Polyols; compounds having an ester bond such as ethylene glycol monoacetate, diethylene glycol monoacetate, propylene glycol monoacetate, or dipropylene glycol monoacetate, the aforementioned polyols or the aforementioned esters a derivative of a polyhydric alcohol such as a monomethyl ether of a compound of a bond, a monoalkyl ether such as monoethyl ether, monopropyl ether or monobutyl ether or a compound having an ether bond such as monophenyl ether (these are preferably Propylene glycol monomethyl ether acetate (PGMEA), propylene glycol monomethyl ether (PGME)); cyclic ethers such as dioxane, or methyl lactate, ethyl lactate (EL), methyl acetate, ethyl acetate, acetic acid An ester of butyl ester, butyl methoxyacetate, methyl pyruvate, ethyl pyruvate, methyl methoxypropionate, ethyl ethoxy propionate, etc.; anisole, ethyl anisole, Tolyl methyl ether Diphenyl ether, anisole, phenetole, butyl phenyl ether and aromatic organic solvents and the like.

〔剝離步驟〕 [Peeling step]

如第1圖之(c)所示,在剝離步驟中,係以基板1位於底面側的方式固定層合體10,並藉由對位於層合體10之上面側的支持板2施力,而從層合體10之基板1剝離支持板2。 As shown in FIG. 1(c), in the peeling step, the laminate 10 is fixed such that the substrate 1 is positioned on the bottom surface side, and the support plate 2 located on the upper surface side of the laminate 10 is biased. The substrate 1 of the laminate 10 peels off the support plate 2.

於此,由於層合體10已藉由前處理步驟去除接著於支持板2之接著層3的一部分,因此,對層合體 10之支持板2所施加的力便集中於經去除該接著層3的部分。又,在前處理步驟中經去除接著層3的部分已藉由剝離溶劑降低其接著性。因此,可使對層合體10之支持板2所施加的力,更適當地集中於經去除接著層3的部分。又,在前處理步驟中,只要將接著層3預先去除至距接著層3之外周部分的端部至少2mm以上的深度,則可更適當地使在剝離步驟中對經去除接著層3之部分所施加的力集中。 Here, since the laminate 10 has removed a portion of the adhesive layer 3 which is followed by the support sheet 2 by the pre-treatment step, the laminate is The force applied by the support plate 2 of 10 is concentrated on the portion from which the adhesive layer 3 is removed. Further, the portion from which the subsequent layer 3 is removed in the pre-treatment step has been lowered by the stripping solvent. Therefore, the force applied to the support plate 2 of the laminate 10 can be more appropriately concentrated on the portion from which the adhesive layer 3 is removed. Further, in the pre-processing step, as long as the adhesive layer 3 is previously removed to a depth of at least 2 mm or more from the end portion of the outer peripheral portion of the adhesive layer 3, the portion of the peeling layer 3 may be more appropriately removed in the peeling step. The applied force is concentrated.

又,本實施形態之剝離方法係對一實施形態之層合體10適當地進行。於此,層合體10的接著層3係以包含脫模劑的接著劑組成物形成,且接著層3的接著性經過調整。因此,縱未對層合體10施加極大的力,仍可從基板1容易地剝離支持板2。 Further, the peeling method of the present embodiment is suitably carried out on the laminate 10 of one embodiment. Here, the adhesive layer 3 of the laminate 10 is formed of an adhesive composition containing a release agent, and then the adhesion of the layer 3 is adjusted. Therefore, the support plate 2 can be easily peeled off from the substrate 1 without applying a great force to the laminate 10.

再者,層合體10中由於接著層3包含脫模劑,支持板2在與接著層3的界面可從基板1剝離。因此,可省略支持板2的清洗、或可減少用以清洗支持板2之溶劑的量。 Further, in the laminate 10, since the adhesive layer 3 contains a release agent, the support sheet 2 can be peeled off from the substrate 1 at the interface with the adhesive layer 3. Therefore, the cleaning of the support plate 2 can be omitted, or the amount of the solvent for cleaning the support plate 2 can be reduced.

(剝離裝置) (peeling device)

本實施形態之剝離方法可利用一般的剝離裝置來進行。舉例而言,剝離裝置只要至少具備用以固定層合體10的基臺(未圖示)即可、及用以對層合體10施力的分離板(未圖示)。就基臺而言,作為其一例,可為藉由利用減壓手段進行吸引來固定層合體10的多孔性部。又, 就分離板而言,作為其一例,宜具備可抓持支持板2的複數個夾具。此外,分離板更佳具備浮動接頭。 The peeling method of this embodiment can be performed by a general peeling apparatus. For example, the peeling device may have at least a base (not shown) for fixing the laminated body 10 and a separating plate (not shown) for biasing the laminated body 10. In the case of the base, as an example, the porous portion of the laminate 10 can be fixed by suction by a decompression means. also, As for the separation plate, as an example thereof, it is preferable to provide a plurality of jigs capable of gripping the support plate 2. In addition, the separator plate preferably has a floating joint.

在剝離步驟中,例如宜以基板1位於底面側的方式將層合體10固定於基臺上,並藉由具備複數個夾具的分離板抓持支持板2之外周端部的去角部分,再使該分離板上升來對層合體10施力。 In the peeling step, for example, the laminate 10 is preferably fixed to the base such that the substrate 1 is on the bottom surface side, and the chamfered portion of the outer peripheral end portion of the support plate 2 is gripped by a separating plate having a plurality of jigs, and then The separator is raised to apply force to the laminate 10.

又,在剝離步驟中,較佳經由可移動形成與層合體10之平面呈平行的圓形軌道、及與層合體10之平面呈垂直的弧狀軌跡的浮動接頭等,自分離板對層合體10施力。 Further, in the peeling step, it is preferable to form a laminated body from the separating plate via a floating joint which is movable to form a circular track parallel to the plane of the laminated body 10 and an arcuate path perpendicular to the plane of the laminated body 10. 10 force.

若經由浮動接頭自分離板對層合體10施力,使力集中於經去除接著層3的部分時,浮動接頭為可移動而使分離板傾斜,隨之,支持板2呈傾斜。藉此,可防止對支持板2及基板1的一部分施加過大的力。從而,可防止支持板2及基板1因過大的力而破損,同時可更適當地從基板1剝離支持板2。 When the laminate 10 is biased from the separation plate via the floating joint, and the force is concentrated on the portion from which the subsequent layer 3 is removed, the floating joint is movable to tilt the separation plate, and accordingly, the support plate 2 is inclined. Thereby, excessive force is applied to the support plate 2 and a part of the substrate 1. Therefore, it is possible to prevent the support plate 2 and the substrate 1 from being damaged by excessive force, and it is possible to more appropriately peel the support plate 2 from the substrate 1.

此外,根據本發明一實施形態之剝離方法,不需要在層合體形成分離層的分離層形成裝置為理所當然者。 Further, according to the peeling method of one embodiment of the present invention, it is not necessary to provide a separation layer forming apparatus in which a separation layer is formed in a laminate.

〔接著層剝離步驟〕 [Next layer peeling step]

如第1圖之(d)及(e)所示,在一實施形態之剝離方法中,於剝離步驟後,係包含將殘留於基板1的接著層3剝離的接著層剝離步驟。 As shown in FIGS. 1(d) and 1(e), in the peeling method of the embodiment, after the peeling step, the peeling step of peeling off the adhesive layer 3 remaining on the substrate 1 is included.

層合體10中,接著層3係包含脫模劑。因此,若將接著層3冷卻至低於熱塑性樹脂之玻璃轉移溫度的溫度,則可在維持膜狀的狀態下從基板1剝離接著層3(第1圖之(d))。亦即,無需使用大量的溶劑將接著層3溶解,即可去除殘留於基板1的接著層3(第1圖之(e))。因此,可省略基板1的清洗、或可減少用於基板1的清洗之溶劑的量。 In the laminate 10, the subsequent layer 3 contains a release agent. Therefore, when the adhesive layer 3 is cooled to a temperature lower than the glass transition temperature of the thermoplastic resin, the adhesive layer 3 can be peeled off from the substrate 1 while maintaining the film shape (Fig. 1 (d)). That is, the adhesive layer 3 remaining on the substrate 1 can be removed without using a large amount of solvent to dissolve the adhesive layer 3 (Fig. 1(e)). Therefore, the cleaning of the substrate 1 or the amount of the solvent used for the cleaning of the substrate 1 can be omitted.

其後,只要藉由清洗去除殘留於基板1表面的接著層3之殘渣,並對基板1進行所欲之處理即可。例如將支持板2分離後,可對基板1進行清洗,並藉由切割而由基板1製造半導體晶片。 Thereafter, the residue of the adhesive layer 3 remaining on the surface of the substrate 1 is removed by washing, and the substrate 1 is subjected to a desired treatment. For example, after the support sheet 2 is separated, the substrate 1 can be cleaned, and the semiconductor wafer can be manufactured from the substrate 1 by dicing.

根據本實施形態之剝離方法,在前處理步驟中,只要使用剝離溶劑至可降低層合體10之接著層3的接著性的程度,即可從基板1容易地剝離支持板2。又,可從基板1及支持板2,以膜狀之狀態剝離接著層3。從而,根據本實施形態之剝離方法,相較於藉由溶劑將接著層溶解而從基板剝離支持板的方法,可減少溶劑的用量。 According to the peeling method of the present embodiment, in the pretreatment step, the support sheet 2 can be easily peeled off from the substrate 1 by using a peeling solvent to such an extent that the adhesion of the adhesive layer 3 of the laminate 10 can be lowered. Further, the adhesive layer 3 can be peeled off from the substrate 1 and the support sheet 2 in a film state. Therefore, according to the peeling method of the present embodiment, the amount of the solvent can be reduced as compared with the method of peeling the support sheet from the substrate by dissolving the adhesive layer by a solvent.

<第2實施形態之剝離方法> <Peeling method of the second embodiment>

本發明之剝離方法非限定於上述實施形態(第1實施形態)。例如,一實施形態(第2實施形態)之剝離方法係包含對本發明一實施形態之層合體11之接著層3的外周部的至少一部分照射光(雷射)的照光步驟(第2圖之(a)及(b))、及從層合體11之基板1剝離支持板2a 的剝離步驟(第2圖之(c))。亦即,本實施形態之剝離方法係進行照光步驟來替代上述之前處理步驟。此外,在進行照光步驟後所進行的剝離步驟(第2圖之(c))及接著層剝離步驟(第2圖之(d)及(e)),由於係與第1實施形形態相同,故省略其說明。 The peeling method of the present invention is not limited to the above embodiment (first embodiment). For example, the peeling method of the embodiment (second embodiment) includes a step of irradiating light (laser) to at least a part of the outer peripheral portion of the adhesive layer 3 of the laminate 11 according to the embodiment of the present invention (Fig. 2 ( a) and (b)), and peeling off the support plate 2a from the substrate 1 of the laminate 11. The stripping step (Fig. 2(c)). That is, the peeling method of the present embodiment performs an illumination step instead of the previous processing step. Further, the peeling step (Fig. 2(c)) and the peeling step (Fig. 2(d) and (e)) performed after the illuminating step are the same as those of the first embodiment. Therefore, the description is omitted.

〔照光步驟〕 [illumination step]

如第2圖之(a)所示,在本實施形態之剝離方法中,層合體11係使用由矽構成的支持板2a而形成。層合體11因具備由矽構成的支持板2a,故可使例如二氧化碳雷射等紅外線適當地穿透。 As shown in Fig. 2(a), in the peeling method of the present embodiment, the laminate 11 is formed using a support plate 2a made of ruthenium. Since the laminate 11 is provided with the support plate 2a made of ruthenium, it is possible to appropriately penetrate infrared rays such as a carbon dioxide laser.

又,可使由矽構成的支持板2a與基板1的熱膨脹率略為相等。因此,縱使對層合體11在例如CVD處理等而於高溫下實施處理,亦可適當地防止支持板2a與基板1的熱膨脹率的差所引起之基板1的扭曲。 Further, the thermal expansion coefficient of the support plate 2a made of ruthenium and the substrate 1 can be made slightly equal. Therefore, even if the laminate 11 is treated at a high temperature by, for example, a CVD process or the like, the distortion of the substrate 1 due to the difference in thermal expansion coefficient between the support plate 2a and the substrate 1 can be appropriately prevented.

此外,縱使支持板使用玻璃時,亦可使二氧化碳雷射等紅外線自基板1側適當地穿透。亦即,藉由從基板1側照射上述紅外線,作為支持板2a可使用由玻璃構成的支持板來替代由矽構成的支持板。 Further, even when glass is used as the support plate, infrared rays such as carbon dioxide laser can be appropriately penetrated from the substrate 1 side. In other words, by irradiating the infrared rays from the substrate 1 side, a support plate made of glass can be used as the support plate 2a instead of the support plate made of tantalum.

再者,接著層3由於包含矽酮作為脫模劑,故可使該矽酮的矽氧烷結構吸收光。 Further, since the subsequent layer 3 contains an anthrone as a releasing agent, the structure of the fluorenone of the fluorenone can be absorbed.

如第2圖之(b)所示,在照光步驟中,係使用二氧化碳雷射照射裝置21從層合體11之支持板2a側向接著層3的外周部的至少一部分照射光L。藉此,可對 層合體11之外周部分的接著層3照射可穿透支持板2a的光(紅外線)。藉此,在層合體11中使接著層3吸收紅外線,藉由該能量,使包含矽酮的接著層3變質,由此可降低支持板2a與接著層3的接著力。 As shown in FIG. 2(b), in the illuminating step, at least a part of the outer peripheral portion of the subsequent layer 3 is irradiated with light L from the side of the support plate 2a of the laminate 11 using the carbon dioxide laser irradiation device 21. With this, you can The adhesive layer 3 of the outer peripheral portion of the laminate 11 illuminates light (infrared rays) that can penetrate the support plate 2a. Thereby, the adhesive layer 11 absorbs infrared rays in the adhesive layer 3, and by this energy, the adhesive layer 3 containing an anthrone is deformed, whereby the adhesive force of the support plate 2a and the adhesive layer 3 can be reduced.

此外,在本說明書中,所稱包含矽酮的接著層「發生變質」,係指以下現象:使其呈現包含矽酮的接著層僅受到些微外力(例如0.1~5Kgf左右)即可能被破壞的狀態、或使其呈現與和包含矽酮的接著層相接的層之接著力降低的狀態。作為因吸收光而發生之包含矽酮的接著層的變質之結果,包含矽酮的接著層喪失受光照射前的強度或接著性。亦即,因吸收光而使包含矽酮的接著層脆化。「包含矽酮之接著層的變質」可為構成包含矽酮之接著層的物質發生吸收之光的能量所引起的分解、立體配置的變化或官能基的解離等。包含矽酮之接著層的變質係起因於矽酮吸收光而發生。因此,可藉由對層合體之包含矽酮的接著層的周端部照射光,使力集中於接著層脆化的該周端部,來對基板與支持板施力。從而,可將基板與支持板適當地分離。 In addition, in the present specification, the term "deterioration" of the adhesive layer containing anthrone refers to a phenomenon in which the adhesive layer containing an anthrone is subjected to only a slight external force (for example, about 0.1 to 5 Kgf), which may be destroyed. The state, or a state in which the adhesion of the layer in contact with the adhesive layer containing the fluorenone is lowered. As a result of deterioration of the adhesive layer containing anthrone due to absorption of light, the adhesive layer containing anthrone has lost strength or adhesion before irradiation with light. That is, the adhesive layer containing an anthrone is embrittled by light absorption. The "deformation of the adhesive layer containing an anthrone" may be a decomposition caused by energy of light absorbing the substance constituting the adhesive layer containing an anthrone, a change in a stereoscopic arrangement, or a dissociation of a functional group. The metamorphism of the adhesive layer comprising an anthrone is caused by the absorption of light by the anthrone. Therefore, the substrate and the support plate can be biased by irradiating light to the peripheral end portion of the laminate containing the fluorenone in the laminate to concentrate the force on the peripheral end portion of the subsequent layer embrittlement. Thereby, the substrate and the support plate can be appropriately separated.

此外,照光步驟係與上述之前處理步驟同樣地固定層合體11,其固定方法及固定裝置亦可使用與上述之前處理步驟相同者。 Further, in the illuminating step, the laminated body 11 is fixed in the same manner as the above-described previous processing steps, and the fixing method and the fixing means may be the same as the above-described previous processing steps.

(光的照射) (lighting of light)

可發出對接著層3的至少一部分所照射的光的雷射, 典型上可舉出紅外線(0.78μm以上且1000μm以下),較佳為遠紅外線(3μm以上且1000μm以下),更佳為波長9μm以上且11μm以下的光。具體而言為CO2雷射。透過使用CO2雷射,可使接著層3吸收上述CO2雷射。其原因在於,由於接著層3包含脫模劑(例如矽油等),且上述脫模劑具有Si-O鍵,因此可吸收CO2雷射等紅外線。因此,藉由CO2雷射等紅外線的照射,可使包含矽酮的接著層3變質,而能使接著層3脆化。 The laser beam which emits light irradiated to at least a part of the adhesive layer 3 is typically infrared (0.78 μm or more and 1000 μm or less), preferably far infrared ray (3 μm or more and 1000 μm or less), more preferably 9 μm. Above and below 11 μm light. Specifically, it is a CO 2 laser. By using a CO 2 laser, the subsequent layer 3 can be made to absorb the aforementioned CO 2 laser. This is because the adhesive layer (for example, eucalyptus oil) is contained in the adhesive layer 3, and the above-mentioned release agent has a Si—O bond, so that infrared rays such as a CO 2 laser can be absorbed. Therefore, the adhesion layer 3 containing an anthrone can be deteriorated by irradiation of infrared rays such as a CO 2 laser, and the adhesion layer 3 can be made embrittled.

就照光步驟中之雷射的照射條件,雷射的平均輸出功率值較佳為1.0W以上且50.0W以下,更佳為3.0W以上且40.0W以下。雷射的重複頻率較佳為20kHz以上且60kHz以下,更佳為30kHz以上且50kHz以下。雷射的掃描速度較佳為100mm/s以上且10,000mm/s以下,更佳為100mm/s以上且1000mm/s以下。藉此,可將雷射的照射條件設定為用以使接著層3的至少一部分變質的適當條件。又,連續光的束點徑及連續光的照射間距只要為相鄰之束點不會重疊,且可使接著層3的至少一部分變質的間距即可。 The average output power value of the laser is preferably 1.0 W or more and 50.0 W or less, more preferably 3.0 W or more and 40.0 W or less in terms of the irradiation conditions of the laser in the illumination step. The repetition frequency of the laser is preferably 20 kHz or more and 60 kHz or less, more preferably 30 kHz or more and 50 kHz or less. The scanning speed of the laser is preferably 100 mm/s or more and 10,000 mm/s or less, more preferably 100 mm/s or more and 1000 mm/s or less. Thereby, the irradiation condition of the laser can be set to an appropriate condition for deteriorating at least a part of the adhesive layer 3. Further, the beam spot diameter of the continuous light and the irradiation pitch of the continuous light may be such that the adjacent beam spots do not overlap and the at least a portion of the layer 3 can be deteriorated.

又,在本實形態之剝離方法所包含的照光步驟中,較佳自支持板2a的周緣部分端部向內側,對以10mm以下的範圍內接著的接著層3照射光,更佳為對以5mm以下的範圍內接著的接著層3照射光,對以2mm以下的範圍內接著的接著層3照射光係最佳者。藉此,在分離基板1與支持板2a時,可使力集中於層合體11的外周 部之降低接著力的接著層3的該外周部。又,藉此,可避免穿透支持板2a與接著層3的光對在基板1之內側所形成的元件造成損傷。此外,就照光步驟而言,藉由從基板1側向內側對接著層3照射光亦可實施之。 Further, in the illuminating step included in the peeling method of the present embodiment, it is preferable that the edge of the peripheral portion of the support plate 2a is directed inward, and the subsequent layer 3 in the range of 10 mm or less is irradiated with light, more preferably The subsequent bonding layer 3 in the range of 5 mm or less is irradiated with light, and the light-based layer 3 is preferably irradiated to the subsequent bonding layer 3 in the range of 2 mm or less. Thereby, when the substrate 1 and the support plate 2a are separated, the force can be concentrated on the outer periphery of the laminate 11. The outer peripheral portion of the layer 3 is lowered by the force. Further, by this, it is possible to prevent the light that penetrates the support plate 2a and the adhesive layer 3 from damaging the components formed on the inner side of the substrate 1. Further, in the case of the illuminating step, it is also possible to illuminate the adhesive layer 3 from the side of the substrate 1 to the inside.

<另一實施形態之剝離方法> <Peeling method of another embodiment>

本發明之實施形態之剝離方法非限定於上述之實施形態。例如,在一實施形態之剝離方法中,於第2實施形態之剝離方法所包含的照光步驟中,係為使用層合體10,自層合體10的外周部向接著層3照射光的構成。 The peeling method of the embodiment of the present invention is not limited to the above embodiment. For example, in the illuminating step included in the peeling method of the second embodiment, the laminated body 10 is used, and the outer layer of the laminated body 10 is irradiated with light to the adhesive layer 3 in the illuminating step.

根據上述之構成,由於接著層3包含矽酮作為脫模劑,無需使光穿透層合體10的基板1或支持板2,對接著層3的外周部照射光,即可使接著層3吸收光。從而,可降低支持板2與接著層3的接著力。此外,亦能以同樣的方法從層合體10剝離基板1。 According to the above configuration, since the adhesive layer 3 contains an anthrone as a release agent, it is not necessary to allow the light to penetrate the substrate 1 or the support sheet 2 of the laminate 10, and the outer peripheral portion of the adhesive layer 3 is irradiated with light, so that the adhesive layer 3 can be absorbed. Light. Thereby, the adhesion of the support plate 2 and the adhesive layer 3 can be reduced. Further, the substrate 1 can also be peeled off from the laminate 10 in the same manner.

本發明之剝離方法非限定於上述之實施形態。例如,在一實施形態之剝離方法中,於前處理步驟中,亦可採用未對層合體之接著層的外周部分進行剝離溶劑的供給之實施形態。剝離溶劑的供給只要依據用以形成層合體的一實施形態之接著劑組成物的接著性來決定是否進行即可。 The peeling method of the present invention is not limited to the above embodiment. For example, in the peeling method of the embodiment, in the pretreatment step, an embodiment in which the supply of the peeling solvent is not performed on the outer peripheral portion of the adhesive layer of the laminate may be employed. The supply of the stripping solvent may be determined depending on the adhesion of the adhesive composition of one embodiment for forming the laminate.

欲從基板1剝離支持板2時,只要調整接著層3的接著性以使其可達成如低於1.5kgf的剝離強度,在前處理步驟中,即可省略剝離液的供給。 When the support sheet 2 is to be peeled off from the substrate 1, the adhesion of the adhesive layer 3 is adjusted so that a peel strength of less than 1.5 kgf can be achieved, and in the pretreatment step, the supply of the peeling liquid can be omitted.

又,在另一實施形態中,剝離方法可為未包含接著層剝離步驟之形態。依據基板及接著劑組成物的種類等,基板1亦可於剝離支持板2後,適當藉由清洗液去除接著層3。 Further, in another embodiment, the peeling method may be in a form not including the adhesive layer peeling step. The substrate 1 may be removed from the support layer 2 by the cleaning liquid, and the subsequent layer 3 may be removed by a cleaning liquid, depending on the type of the substrate and the composition of the adhesive.

再者,在又一實施形態中,亦可將支持板2固定於基臺等,並對基板1施力。藉此,也可從基板1容易地剝離支持板2。 Furthermore, in still another embodiment, the support plate 2 may be fixed to a base or the like, and the substrate 1 may be biased. Thereby, the support plate 2 can be easily peeled off from the substrate 1.

本發明非限定於上述之各實施形態,於請求項所示範圍內可實施種種變更,對於適當組合不同實施形態所分別揭示之技術手段而得到的實施形態亦包含於本發明之技術範圍內。 The present invention is not limited to the above-described embodiments, and various modifications can be made within the scope of the claims. The embodiments obtained by appropriately combining the technical means disclosed in the different embodiments are also included in the technical scope of the present invention.

〔實施例〕 [Examples] 〔接著劑組成物的調製〕 [Preparation of the composition of the adhesive]

首先,作為實施例1~35,係調製接著劑的種類、脫模劑的種類及摻合量不同的接著劑組成物。又,作為比較例1~5,係調製不含脫模劑的接著劑組成物。 First, as Examples 1 to 35, an adhesive composition having different types of adhesives, types of release agents, and blending amounts was prepared. Further, as Comparative Examples 1 to 5, an adhesive composition containing no release agent was prepared.

作為接著劑組成物之熱塑性樹脂使用的樹脂係為:旭化成股份有限公司製Taftec(商品名)H1051(SEBS;氫化苯乙烯系熱塑性彈性體;苯乙烯含量42%、Mw=78,000)、KURARAY股份有限公司製Septon(商品名)之Septon2002(SEPS:苯乙烯-異戊二烯-苯乙烯嵌段)、Septon8004(SEP:聚苯乙烯-聚(乙烯/丙烯) 嵌段)、Septon V9827(反應交聯型苯乙烯-乙烯-丁烯-苯乙烯嵌段共聚物)、Polyplastics股份有限公司製TOPAS(商品名)TM(環烯烴共聚物;乙烯-降冰片烯之共聚物、Mw=10,000、Mw/Mn=2.08、降冰片烯:乙烯=50:50(重量比))、三井化學公司製APL8008T(環烯烴共聚物、乙烯:四環十二烯=80:20之共聚物)、及丙烯酸系共聚物A1(苯乙烯/甲基丙烯酸二環戊烯酯/甲基丙烯酸十八酯=20/60/20(重量比)之共聚物、分子量10000)。 The resin used as the thermoplastic resin of the adhesive composition is Taftec (trade name) H1051 (SEBS; hydrogenated styrene-based thermoplastic elastomer; styrene content 42%, Mw = 78,000) manufactured by Asahi Kasei Co., Ltd., and limited KURARAY shares. Septon 2002 (SEPS: styrene-isoprene-styrene block) and Septon 8004 (SEP: polystyrene-poly(ethylene/propylene) manufactured by the company Septon (trade name) Block), Septon V9827 (reactive crosslinked styrene-ethylene-butylene-styrene block copolymer), TOPAS (trade name) TM (polyolefin copolymer; ethylene-norbornene) manufactured by Polyplastics Co., Ltd. Copolymer, Mw = 10,000, Mw / Mn = 2.08, norbornene: ethylene = 50:50 (by weight), APL8008T manufactured by Mitsui Chemicals Co., Ltd. (cycloolefin copolymer, ethylene: tetracyclododecene = 80:20) Copolymer) and acrylic copolymer A1 (styrene / dicyclopentenyl methacrylate / octadecyl methacrylate = 20/60 / 20 (by weight) copolymer, molecular weight 10000).

又,作為熱聚合抑制劑(添加劑),係使用BASF公司製「IRGANOX(商品名)1010」。又,作為主溶劑,係使用十氫萘。另外,作為添加溶劑,係使用乙酸丁酯。 Further, as a thermal polymerization inhibitor (additive), "IRGANOX (trade name) 1010" manufactured by BASF Corporation was used. Further, as the main solvent, decalin was used. Further, as an additive solvent, butyl acetate was used.

〔製造例1〕 [Manufacturing Example 1]

首先,將以55:45:10的重量比混有H1051、Septon2002及TOPAS TM的熱塑性樹脂溶解於十氫萘:乙酸丁酯的重量比為15:1的溶劑中,使濃度成為28重量%。其次,以相對於熱塑性樹脂的固體成分量為1重量%的方式添加IRGANOX1010,得到接著劑組成物A。 First, a thermoplastic resin in which H1051, Septon 2002, and TOPASTM were mixed in a weight ratio of 55:45:10 was dissolved in a solvent having a weight ratio of decalin:butyl acetate of 15:1 to a concentration of 28% by weight. Next, IRGANOX 1010 was added so that the amount of the solid content of the thermoplastic resin was 1% by weight to obtain the adhesive composition A.

接著,依表1所示之脫模劑的種類及摻合量,對接著劑組成物A摻合脫模劑,調製成實施例1~11之接著劑組成物。此外,表1所示之脫模劑的摻合量係以接著劑組成物A中的樹脂固體成分的重量比表示。又,準備不含脫模劑的接著劑組成物A作為比較例1。 Next, the release agent was blended with the adhesive composition A according to the type and blending amount of the release agent shown in Table 1, and the adhesive compositions of Examples 1 to 11 were prepared. Further, the blending amount of the releasing agent shown in Table 1 is represented by the weight ratio of the solid resin component in the adhesive composition A. Further, an adhesive composition A containing no release agent was prepared as Comparative Example 1.

以下表2示出包括實施例1~11所使用之脫模劑的各物性值的細節。此外,表2中的KF6003至KF6123之脫模劑係全為信越化學工業股份有限公司製者。 Table 2 below shows details of the physical property values of the release agents used in Examples 1 to 11. In addition, the release agents of KF6003 to KF6123 in Table 2 are all manufactured by Shin-Etsu Chemical Co., Ltd.

〔製造例2〕 [Manufacturing Example 2]

首先,將以50:20:15:15的重量比混有Septon V9827、Septon S2002、TOPAS TM及丙烯酸系共聚物A1的熱塑性樹脂溶解於十氫萘:乙酸丁酯的重量比為15:1的溶劑中,使濃度成為28重量%。其次,以相對於熱塑性樹脂的固體成分量為1重量%的方式添加IRGANOX1010,得到接著劑組成物B。 First, a thermoplastic resin in which Septon V9827, Septon S2002, TOPASTM, and acrylic copolymer A1 are mixed in a weight ratio of 50:20:15:15 is dissolved in decalin: butyl acetate in a weight ratio of 15:1. In the solvent, the concentration was made 28% by weight. Next, IRGANOX 1010 was added so that the amount of the solid content of the thermoplastic resin was 1% by weight to obtain the adhesive composition B.

接著,依表3所示之脫模劑的種類及摻合量,對接著劑組成物B摻合脫模劑,調製成實施例12~17之接著劑組成物。此外,表3所示之脫模劑的摻合量係以接著劑組成物B中的樹脂固體成分的重量比表示。又,準備不含脫模劑的接著劑組成物B作為比較例2。 Next, the release agent was blended with the adhesive composition B according to the type and blending amount of the release agent shown in Table 3 to prepare the adhesive compositions of Examples 12 to 17. Further, the blending amount of the releasing agent shown in Table 3 is represented by the weight ratio of the solid resin component in the adhesive composition B. Further, an adhesive composition B containing no release agent was prepared as Comparative Example 2.

包括實施例12~17所使用之脫模劑的各物性值的細節係與上表2所記載者相同。 The details of the physical property values of the release agents used in Examples 12 to 17 are the same as those described in Table 2 above.

〔製造例3〕 [Manufacturing Example 3]

首先,將以52:26:11:11的重量比混有TaftecH1051、Septon S2002、TOPAS TM及丙烯酸系共聚物A1的熱塑性樹脂溶解於十氫萘:乙酸丁酯的重量比為15:1的溶劑中,使濃度成為28重量%。其次,以相對於熱塑性樹脂的固體成分量為1重量%的方式添加IRGANOX1010,得到接著劑組成物C。 First, a thermoplastic resin in which Taftec H1051, Septon S2002, TOPASTM, and acrylic copolymer A1 are mixed in a weight ratio of 52:26:11:11 is dissolved in a solvent having a weight ratio of decahydronaphthalene:butyl acetate of 15:1. The concentration was made 28% by weight. Next, IRGANOX 1010 was added so that the amount of the solid content of the thermoplastic resin was 1% by weight to obtain the adhesive composition C.

接著,依表4所示之脫模劑的種類及摻合量,對接著劑組成物C摻合脫模劑,調製成實施例18~23之接著劑組成物。此外,表4所示之脫模劑的摻合量係以接著劑組成物C中的樹脂固體成分的重量比表示。又,準備不含脫模劑的接著劑組成物C作為比較例3。 Next, the release agent was blended on the adhesive composition C according to the type and blending amount of the release agent shown in Table 4 to prepare the adhesive compositions of Examples 18 to 23. Further, the blending amount of the releasing agent shown in Table 4 is represented by the weight ratio of the solid content of the resin in the adhesive composition C. Further, an adhesive composition C containing no release agent was prepared as Comparative Example 3.

包括實施例18~23所使用之脫模劑的各物性值的細節亦與上表2所記載者相同。 The details of the physical property values of the release agents used in Examples 18 to 23 are also the same as those described in Table 2 above.

〔製造例4〕 [Manufacturing Example 4]

將作為熱塑性樹脂的Septon8004溶解於十氫萘:乙酸丁酯的重量比為15:1的溶劑中,使濃度成為28重量%。其次,以相對於熱塑性樹脂的固體成分量為1重量%的方式添加IRGANOX1010,得到接著劑組成物D。 Septon 8004, which is a thermoplastic resin, was dissolved in a solvent having a weight ratio of decalin:butyl acetate of 15:1 to a concentration of 28% by weight. Next, IRGANOX 1010 was added so that the amount of the solid content of the thermoplastic resin was 1% by weight to obtain the adhesive composition D.

接著,依表5所示之脫模劑的種類及摻合量,對接著劑組成物D摻合脫模劑,調製成實施例24~29之接著劑組成物。此外,表5所示之脫模劑的摻合量係以接著劑組成物D中的樹脂固體成分的重量比表示。又,準備不含脫模劑的接著劑組成物D作為比較例4。 Next, the release agent was blended with the release agent D according to the type and blending amount of the release agent shown in Table 5, and the adhesive compositions of Examples 24 to 29 were prepared. Further, the blending amount of the releasing agent shown in Table 5 is represented by the weight ratio of the solid resin component in the adhesive composition D. Further, an adhesive composition D containing no release agent was prepared as Comparative Example 4.

包括實施例24~29所使用之脫模劑的各物性值的細節亦與上表2所記載者相同。 The details of the physical property values of the release agents used in Examples 24 to 29 are also the same as those described in Table 2 above.

〔製造例5〕 [Manufacturing Example 5]

將作為熱塑性樹脂的APL8008T溶解於十氫萘:乙酸丁酯的重量比為15:1的溶劑中,使濃度成為28重量%。其次,以相對於熱塑性樹脂的固體成分量為1重量%的方式添加IRGANOX1010,得到接著劑組成物E。 APL8008T as a thermoplastic resin was dissolved in a solvent having a weight ratio of decalin:butyl acetate of 15:1 to a concentration of 28% by weight. Next, IRGANOX 1010 was added so that the amount of the solid content of the thermoplastic resin was 1% by weight to obtain an adhesive composition E.

接著,依表6所示之脫模劑的種類及摻合量,對接著劑組成物E摻合脫模劑,調製成實施例30~35之接著劑組成物。此外,表6所示之脫模劑的摻合量係以接著劑組成物E中的樹脂固體成分的重量比表示。又,準備不含脫模劑的接著劑組成物E作為比較例5。 Next, the release agent was blended with the adhesive composition E according to the type and blending amount of the release agent shown in Table 6, and the adhesive compositions of Examples 30 to 35 were prepared. Further, the blending amount of the releasing agent shown in Table 6 is represented by the weight ratio of the solid resin component in the adhesive composition E. Further, an adhesive composition E containing no release agent was prepared as Comparative Example 5.

包括實施例30~35所使用之脫模劑的各物性值的細節亦與上表2所記載者相同。 The details of the physical property values of the release agents used in Examples 30 to 35 are also the same as those described in Table 2 above.

其次,使用實施例1~35及比較例1~5之接著劑組成物,在接著劑組成物的塗佈至支持體的剝離的各步驟中評定接著劑組成物的塗佈性、支持體的貼合性、密接性及剝離性。 Next, using the adhesive compositions of Examples 1 to 35 and Comparative Examples 1 to 5, the applicability of the adhesive composition and the support were evaluated in each step of applying the adhesive composition to the release of the support. Adhesion, adhesion and peelability.

(接著劑組成物之塗佈性的評定) (Evaluation of the applicability of the adhesive composition)

將實施例1~35及比較例1~5之接著劑組成物塗佈於基板上而形成接著層後,對各塗接著劑組成物進行塗佈性的評定。 After the adhesive compositions of Examples 1 to 35 and Comparative Examples 1 to 5 were applied onto a substrate to form an adhesive layer, the applicator composition was evaluated for applicability.

首先,對半導體晶圓基板(12吋;矽)旋轉塗佈實施例1之接著劑組成物,在90℃、160℃、220℃的溫度下各烘烤4分鐘,而形成接著層(膜厚50μm)。其後,一面使形成有接著層的半導體晶圓基板以1,500rpm旋轉,一面藉由EBR噴嘴以10cc/min的供給量供給 TZNR(註冊商標)HC Thinner(東京應化工業股份有限公司製)達5~15分鐘,藉此,在形成於半導體晶圓基板的外周部分之接著層的外周部分,以半導體晶圓基板的端部為基準向內側去除接著層至1.3mm。又,依循同樣的程序,將實施例2~35及比較例1~5之接著層形成於基板上。 First, the semiconductor wafer substrate (12 Å; 矽) was spin-coated with the adhesive composition of Example 1, and baked at a temperature of 90 ° C, 160 ° C, and 220 ° C for 4 minutes to form an adhesive layer (film thickness). 50 μm). Thereafter, the semiconductor wafer substrate on which the adhesive layer was formed was rotated at 1,500 rpm while being supplied by an EBR nozzle at a supply amount of 10 cc/min. TZNR (registered trademark) HC Thinner (manufactured by Tokyo Ohka Kogyo Co., Ltd.) for 5 to 15 minutes, whereby the outer peripheral portion of the adhesive layer formed on the outer peripheral portion of the semiconductor wafer substrate is the end of the semiconductor wafer substrate The portion was removed to the inside from the bottom layer to 1.3 mm. Further, the bonding layers of Examples 2 to 35 and Comparative Examples 1 to 5 were formed on the substrate in accordance with the same procedure.

其後,對實施例1~35及比較例1~5進行塗佈性的評定。塗佈性係根據形成於半導體晶圓基板上的接著層在塗佈時有無產生白煙來評定。塗佈性係以目視評定,將對半導體晶圓基板塗佈接著劑組成物,並在90℃、160℃、220℃的溫度下各烘烤4分鐘時,未從形成於半導體晶圓基板的接著層冒出白煙者評為「○」、將冒出白煙者評為「×」。此外,當脫模劑的耐熱性不足時,於烘烤時會分解而以白煙觀察到。 Thereafter, the coating properties of Examples 1 to 35 and Comparative Examples 1 to 5 were evaluated. The coatability is evaluated based on whether or not white smoke is generated at the time of coating according to the adhesive layer formed on the semiconductor wafer substrate. The coating property was visually evaluated, and when the adhesive composition was applied to the semiconductor wafer substrate and baked at 90 ° C, 160 ° C, and 220 ° C for 4 minutes, it was not formed on the semiconductor wafer substrate. Then, those who emit white smoke are rated as "○", and those who emit white smoke are rated as "X". Further, when the heat resistance of the release agent is insufficient, it is decomposed during baking and observed as white smoke.

(層合體的製作及貼合性的評定) (Evaluation of the fabrication and fit of the laminate)

接著,使用以實施例1~35及比較例1~5之接著劑組成物形成接著層的半導體晶圓基板,製作層合體。其後,對各層合體進行貼合性的評定。 Next, a semiconductor wafer substrate in which an adhesive layer was formed using the adhesive compositions of Examples 1 to 35 and Comparative Examples 1 to 5 was used to fabricate a laminate. Thereafter, the evaluation of the fit of each laminate was carried out.

首先,針對塗佈有實施例1之接著劑組成物的半導體晶圓基板,依序重合半導體晶圓基板、接著層及支持體,並於真空下(5Pa)、215℃的條件下,以4,000kgf的貼合壓力按壓2分鐘而將支持體與半導體晶圓基板貼合。此外,上述支持體係使用具12吋大小的玻璃 支持體。另外,依循同樣的程序,製成實施例2~35及比較例1~5之層合體。 First, the semiconductor wafer substrate, the subsequent layer, and the support were sequentially superposed on the semiconductor wafer substrate coated with the adhesive composition of Example 1, and under vacuum (5 Pa) and 215 ° C, 4,000. The bonding pressure of kgf was pressed for 2 minutes to bond the support to the semiconductor wafer substrate. In addition, the above support system uses glass with a size of 12 inches. Support body. Further, the laminates of Examples 2 to 35 and Comparative Examples 1 to 5 were produced in the same manner.

其後,針對實施例1~35及比較例1~5之層合體,評定貼合性。貼合性係以目視評定,將無空隙等未接著部分的層合體評為「○」、將有未接著部分的層合體評為「×」。 Thereafter, the laminates of Examples 1 to 35 and Comparative Examples 1 to 5 were evaluated for adhesion. The fit was evaluated by visual observation, and the laminate having no voids and the like was evaluated as "○", and the laminate having no subsequent portion was evaluated as "X".

(背面研磨處理後之密接性的評定) (Evaluation of adhesion after back grinding treatment)

接著,對實施例1~35及比較例1~5之層合體的半導體晶圓基板的背面藉由DISCO公司製背面研磨裝置削薄至半導體晶圓基板的厚度成為50μm(背面研磨處理:BG處理)。其後,針對各層合體,評定BG處理後之支持體的密接性。密接性係以目視評定,將未看出支持體剝離的層合體評為「○」、將可看出剝離的層合體評為「×」。 Then, the back surface of the semiconductor wafer substrate of the laminates of Examples 1 to 35 and Comparative Examples 1 to 5 was thinned by a back surface polishing apparatus manufactured by DISCO Corporation until the thickness of the semiconductor wafer substrate was 50 μm (back grinding treatment: BG treatment) ). Thereafter, the adhesion of the support after the BG treatment was evaluated for each laminate. The adhesion was evaluated by visual observation, and the laminate in which the support was not peeled off was evaluated as "○", and the laminate in which peeling was observed was evaluated as "X".

(藉由CVD處理之耐熱性的評定) (Assessment of heat resistance by CVD treatment)

接著,對進行過BG處理的實施例1~35及比較例1~5之層合體,在220℃、10分鐘的條件下進行使用N2的電漿CVD處理。其後,針對各層合體進行耐熱性的評定。耐熱性係以目視評定,將無層合體的邊緣部之接著層的露出或層合體之間的空隙等的未接著部分者評為「○」、將有露出或未接著部分的層合體評為「×」。 Next, the laminates of Examples 1 to 35 and Comparative Examples 1 to 5 subjected to the BG treatment were subjected to plasma CVD treatment using N 2 at 220 ° C for 10 minutes. Thereafter, the heat resistance was evaluated for each laminate. The heat resistance was evaluated by visual evaluation, and the exposed portion of the edge portion without the laminate or the void between the laminates was evaluated as "○", and the laminate having the exposed or unattached portion was evaluated as "X".

(剝離性的評定) (evaluation of peelability)

接著,對進行過的電漿CVD處理的實施例1~35及比較例1~5之層合體進行前處理步驟及剝離步驟,進行剝離性的評定。 Next, the laminates of Examples 1 to 35 and Comparative Examples 1 to 5 subjected to the plasma CVD treatment were subjected to a pretreatment step and a peeling step to evaluate the peelability.

首先,插入刮刀至距實施例1之層合體的外周部分的端部2mm的深度,其後,藉由對層合體之插入刮刀的部位供給10ml作為剝離溶劑的乙醇來進行前處理步驟。其次,透過使用TWR12000系列(東京應化工業股份有限公司製)作為支持體分離裝置,將半導體晶圓基板側固定,並對支持體側施力來進行剝離步驟。剝離性係將可從半導體晶圓基板剝離玻璃支持體的層合體評為「○」、將無法剝離的層合體評為「×」來評定。又,依循同樣的程序,對實施例2~35及比較例1~5之層合體進行剝離性的評定。 First, the doctor blade was inserted to a depth of 2 mm from the end portion of the outer peripheral portion of the laminate of Example 1, and thereafter, a pretreatment step was carried out by supplying 10 ml of ethanol as a stripping solvent to the portion where the blade was inserted into the laminate. Then, a TWR 12000 series (manufactured by Tokyo Ohka Kogyo Co., Ltd.) was used as a support separation device, and the semiconductor wafer substrate side was fixed, and a support step was applied to the support side. The peelability was evaluated by rating the laminate from which the glass support was peeled off from the semiconductor wafer substrate to "○" and the laminate which could not be peeled off as "X". Further, the laminates of Examples 2 to 35 and Comparative Examples 1 to 5 were evaluated for peelability in accordance with the same procedure.

(評定結果) (Evaluation Results)

實施例1~35及比較例1~5的塗佈性、貼合性、密接性、耐熱性及剝離性之評定的結果係如以下表7~表11所示: The results of evaluation of coating properties, adhesion, adhesion, heat resistance and peelability of Examples 1 to 35 and Comparative Examples 1 to 5 are shown in Tables 7 to 11 below:

如表7~表11所示,使用實施例1~35之接著劑組成物時,可確認可獲得與不含脫模劑的比較例1~5之接著劑組成物同等的塗佈性、貼合性、密接性及耐熱性。又,藉由進行前處理步驟,可確認可從半導體晶圓基板適當地剝離玻璃支持體。 As shown in Tables 7 to 11, when the adhesive compositions of Examples 1 to 35 were used, it was confirmed that coating properties comparable to those of the adhesive compositions of Comparative Examples 1 to 5 containing no release agent were obtained. Properties, adhesion and heat resistance. Further, by performing the pretreatment step, it was confirmed that the glass support can be appropriately peeled off from the semiconductor wafer substrate.

又,由使用實施例24~35之接著劑組成物的場合的結果可確認,透過使使用彈性體樹脂、環烯烴樹脂各單質作為熱塑性樹脂的接著組成物含有脫模劑,來進行前處理步驟,由此可形成可從基板適當地分離支持體的層合體。 In addition, as a result of the use of the composition of the adhesives of Examples 24 to 35, it was confirmed that the pre-treatment step was carried out by using a release agent containing a single component of the elastomer resin or the cycloolefin resin as a thermoplastic resin. Thereby, a laminate which can appropriately separate the support from the substrate can be formed.

〔剝離強度的評定〕 [Evaluation of peel strength]

對使用實施例1及2、以及比較例1之接著劑組成物的層合體進行剝離強度的評定。此外,剝離強度的評定係根據與剝離性之評定同樣的條件來進行。將剝離強度的評 定結果示於表12。 The laminates using the adhesive compositions of Examples 1 and 2 and Comparative Example 1 were evaluated for peel strength. Further, the evaluation of the peel strength was carried out under the same conditions as the evaluation of the peelability. Evaluation of peel strength The results are shown in Table 12.

如表12所示,就實施例1及2之層合體,從半導體晶圓基板剝離支持體時的剝離強度為低於1.5kgf之結果。相對於此,就比較例1之層合體,剝離強度係顯示3.8kgf以上的值,無法在不損壞基板及支持體的情況下從基板剝離支持體。 As shown in Table 12, in the laminates of Examples 1 and 2, the peel strength when the support was peeled off from the semiconductor wafer substrate was less than 1.5 kgf. On the other hand, in the laminate of Comparative Example 1, the peel strength showed a value of 3.8 kgf or more, and the support could not be peeled off from the substrate without damaging the substrate and the support.

由此等評定結果可確認,若使用本發明一實施形態之接著劑組成物,藉由摻合脫模劑,縱未設置藉吸收光而變質的分離層,仍可形成可從基板適當地分離支持體的層合體。 As a result of the evaluation, it was confirmed that the use of the adhesive composition according to the embodiment of the present invention can be suitably separated from the substrate by blending the release agent without vertically providing a separation layer which is deteriorated by absorption of light. The laminate of the support.

〔使用矽支持體之層合體的評定〕 [Assessment of laminates using ruthenium support]

使用實施例1~35及比較例1~5之接著劑組成物,製作將12吋之矽載體(矽支持體)與半導體晶圓基板層合而成的層合體,並進行使用各接著劑組成物之層合體中的接著劑組成物的塗佈性、貼合性、密接性、耐熱性及剝離性的評定。此外,各層合體除使用矽載體以外,均以與使用玻璃支持體之層合體相同的製作條件來製作。又,對於 各層合體的塗佈性、貼合性、密接性及耐熱性的評定條件,亦與使用玻璃支持體之層合體的評定條件相同。 Using the adhesive compositions of Examples 1 to 35 and Comparative Examples 1 to 5, a laminate obtained by laminating a 12-inch ruthenium carrier (ruthenium support) and a semiconductor wafer substrate was prepared, and each of the adhesives was used. Evaluation of applicability, adhesion, adhesion, heat resistance, and peelability of the adhesive composition in the laminate of the material. Further, each laminate was produced under the same production conditions as those of the laminate using the glass support except that the ruthenium carrier was used. Again, for The evaluation conditions of the coatability, the adhesion, the adhesion, and the heat resistance of each laminate were also the same as those of the laminate using the glass support.

若為使用實施例1~35及比較例1~5之接著劑組成物,且使用12吋之矽載體(矽支持體)與半導體晶圓基板所製成的層合體時,亦與使用玻璃支持體所製成的層合體時同樣,塗佈性、貼合性、密接性、及耐熱性的評定均為「○」。 When the laminate compositions of Examples 1 to 35 and Comparative Examples 1 to 5 are used, and a laminate made of a 12-inch tantalum carrier (ruthenium support) and a semiconductor wafer substrate is used, glass support is also used. In the case of the laminate produced by the body, the evaluation of applicability, adhesion, adhesion, and heat resistance was "○".

〔藉由光照射之剝離性的評定〕 [Assessment of peelability by light irradiation]

以使用實施例1~35及比較例1~5之接著組成物,將矽載體與半導體晶圓基板層合而成的層合體為對象物,進行照光步驟替代上述之前處理步驟,來進行剝離性的評定。 Using the laminates of Examples 1 to 35 and Comparative Examples 1 to 5, a laminate obtained by laminating a ruthenium carrier and a semiconductor wafer substrate was used as an object, and an illuminating step was carried out instead of the above-described previous treatment step to carry out releasability. Assessment.

具體而言,作為照光步驟,係對從各層合體的外周部向內側5mm的寬度由矽載體側照射CO2雷射後,將半導體晶圓基板側固定,再藉由對矽載體施加0.5kgf的力來進行剝離步驟。 Specifically, in the illuminating step, the CO 2 laser is irradiated from the outer peripheral portion of each laminate to the inner side by a width of 5 mm from the side of the carrier, and then the semiconductor wafer substrate side is fixed, and 0.5 kgf is applied to the crucible carrier. Force to perform the stripping step.

上述CO2雷射的照射條件如下:雷射的平均功率:100%、20W The above-mentioned CO 2 laser irradiation conditions are as follows: the average power of the laser: 100%, 20 W

雷射的掃描速度:500mm/sec。 Laser scanning speed: 500mm/sec.

剝離性的評定係藉由施加0.5kgf的力,將可從半導體晶圓基板剝離矽載體者評為「○」、將無法剝離者評為「×」。 The peelability was evaluated by applying a force of 0.5 kgf, and the person who can be peeled off from the semiconductor wafer substrate was rated as "○", and the person who could not be peeled off was rated as "x".

就剝離性的評定的結果,對於使用實施例 1~35之接著劑組成物的層合體,可從半導體晶圓基板容易地剝離支持體(○)。然而,就使用不含脫模劑之接著劑組成物所製作的比較例1~5之層合體,縱使在進行照光步驟後,將半導體晶圓基板側固定,並對矽載體施加0.5kgf的力,仍無法從半導體晶圓基板剝離矽載體(×)。 As a result of the evaluation of the peelability, for the use example The laminate of the adhesive composition of 1 to 35 can easily peel off the support (○) from the semiconductor wafer substrate. However, the laminates of Comparative Examples 1 to 5 produced using the adhesive composition-free adhesive composition were used to fix the semiconductor wafer substrate side after the illuminating step, and a force of 0.5 kgf was applied to the ruthenium carrier. It is still impossible to peel off the tantalum carrier (x) from the semiconductor wafer substrate.

(由基板側照光的評定) (Assessment from the side of the substrate)

製作使用實施例1~35及比較例1~5之接著劑組成物將半導體晶圓基板、與12吋之玻璃支持體層合而成的層合體。此外,就各層合體,係基於塗佈性評定的條件塗佈接著劑組成物,並基於貼合性評定的條件貼合半導體晶圓基板及玻璃支持體。又,對依此條件製作的各層合體進行BG處理及電漿CVD處理,其後,藉由對從各層合體的外周部向內側5mm的寬度由半導體晶圓基板側照射CO2雷射後,將半導體晶圓基板側固定,再對玻璃支持體施加0.5kgf的力來進行剝離步驟。此外,照光步驟中的CO2雷射的照射條件係與由矽載體側照光之實施例相同的條件。 A laminate in which a semiconductor wafer substrate and a glass support of 12 Å were laminated using the adhesive compositions of Examples 1 to 35 and Comparative Examples 1 to 5 was produced. Further, in each of the laminates, the adhesive composition was applied under the conditions of the evaluation of the applicability, and the semiconductor wafer substrate and the glass support were bonded together under the conditions of the evaluation of the adhesion. Further, each of the laminates produced under the conditions was subjected to a BG treatment and a plasma CVD treatment, and thereafter, a CO 2 laser was irradiated from the semiconductor wafer substrate side to a width of 5 mm from the outer peripheral portion of each laminate. The semiconductor wafer substrate side was fixed, and a force of 0.5 kgf was applied to the glass support to perform a peeling step. Further, the irradiation conditions of the CO 2 laser in the illuminating step are the same as those of the embodiment in which the ruthenium carrier side illuminates.

就剝離性的評定的結果,對於使用實施例1~35之接著劑組成物的層合體,係與使用矽載體之層合體的剝離性的評定結果同樣地可從半導體晶圓基板容易地剝離玻璃支持體(○)。又,就比較例1~5之層合體,縱使在進行照光步驟後,將半導體晶圓基板側固定,並對玻璃支持體施加0.5kgf的力,仍無法從半導體晶圓基板剝離 玻璃支持體(×)。 As a result of the evaluation of the peeling property, the laminate using the adhesive compositions of Examples 1 to 35 can be easily peeled off from the semiconductor wafer substrate in the same manner as the evaluation result of the peeling property of the laminate using the ruthenium carrier. Support (○). Further, in the laminates of Comparative Examples 1 to 5, even after the illuminating step, the semiconductor wafer substrate side was fixed, and a force of 0.5 kgf was applied to the glass support, and the semiconductor wafer substrate could not be peeled off. Glass support (×).

由此結果可確認,透過使用本發明之接著劑組成物,並藉由進行照光來替代上述之前處理步驟,亦可降低其接著強度,而可形成可從基板適當地剝離支持體的層合體。 As a result, it was confirmed that by using the adhesive composition of the present invention and by performing illumination instead of the above-described previous treatment step, the adhesive strength can be lowered, and a laminate which can appropriately peel the support from the substrate can be formed.

〔產業上可利用性〕 [Industrial Applicability]

本發明可於例如經微細化之半導體裝置的製造步驟中廣泛地利用。 The present invention can be widely utilized in, for example, a manufacturing step of a miniaturized semiconductor device.

1‧‧‧基板 1‧‧‧Substrate

2‧‧‧支持板(支持體) 2‧‧‧Support board (support)

3‧‧‧接著層 3‧‧‧Next layer

10‧‧‧層合體 10‧‧‧Layer

20‧‧‧刮刀 20‧‧‧Scraper

S‧‧‧剝離溶劑 S‧‧‧ stripping solvent

Claims (10)

一種接著劑組成物,其係用以暫時貼合基板、及支持該基板之支持體的接著劑組成物,其特徵為包含熱塑性樹脂、及脫模劑。 An adhesive composition for temporarily bonding a substrate and an adhesive composition supporting the support of the substrate, comprising a thermoplastic resin and a release agent. 如請求項1之接著劑組成物,其中上述熱塑性樹脂係由烴樹脂及彈性體所成之群中選出的至少1種。 The adhesive composition according to claim 1, wherein the thermoplastic resin is at least one selected from the group consisting of a hydrocarbon resin and an elastomer. 如請求項2之接著劑組成物,其中上述彈性體為氫化苯乙烯彈性體。 The adhesive composition of claim 2, wherein the elastomer is a hydrogenated styrene elastomer. 如請求項1~3中任一項之接著劑組成物,其中上述脫模劑係由二甲基矽酮、及、藉由對二甲基矽酮之末端及側鏈的至少一部分導入官能基而改質的改質矽酮所成之群中選出的至少1種。 The adhesive composition according to any one of claims 1 to 3, wherein the release agent is derived from dimethyl fluorenone, and a functional group is introduced by at least a part of a terminal and a side chain of dimethyl fluorenone. At least one selected from the group of modified oxime ketones. 如請求項4之接著劑組成物,其中上述官能基係由甲醇基、環氧基、胺基、丙烯醯基、甲基丙烯醯基、羧基、酚基、巰基、烷基、芳烷基、矽醇基、二醇及聚醚所成之群中選出的至少1種官能基。 The adhesive composition of claim 4, wherein the functional group is a methanol group, an epoxy group, an amine group, an acryl group, a methacryl group, a carboxyl group, a phenol group, a decyl group, an alkyl group, an aralkyl group, At least one functional group selected from the group consisting of sterol groups, diols, and polyethers. 如請求項4之接著劑組成物,其中上述二甲基矽酮或上述改質矽酮在25℃下的動力黏度為20mm2/s以上。 The adhesive composition of claim 4, wherein the dimethyl ketone or the above modified fluorenone has a dynamic viscosity at 25 ° C of 20 mm 2 /s or more. 如請求項4之接著劑組成物,其中上述脫模劑係以相對於上述熱塑性樹脂的總量為0.01重量%以上且10重量%以下的範圍內摻合。 The adhesive composition according to claim 4, wherein the release agent is blended in a range of 0.01% by weight or more and 10% by weight or less based on the total amount of the thermoplastic resin. 一種層合體,其係將基板、與支持該基板之支持體,經由使用如請求項4之接著劑組成物所形成的接著層 貼合而成。 A laminate comprising a substrate, and a support supporting the substrate, via an adhesive layer formed using the adhesive composition of claim 4 Fitted together. 一種剝離方法,其特徵為包含:去除如請求項8之層合體之上述接著層的外周部的至少一部分的前處理步驟;及在上述前處理步驟後,從上述層合體的上述基板剝離上述支持體的剝離步驟。 A peeling method comprising: a pre-treating step of removing at least a portion of an outer peripheral portion of the adhesive layer of the laminate of claim 8; and, after the pre-treating step, peeling off the support from the substrate of the laminate The stripping step of the body. 一種剝離方法,其特徵為包含:對如請求項8之層合體之上述接著層的外周部的至少一部分照光的照光步驟;及在上述照光步驟後,從上述層合體的上述基板剝離上述支持體的剝離步驟。 A peeling method comprising: a step of illuminating at least a portion of an outer peripheral portion of the adhesive layer of the laminate of claim 8; and, after the illuminating step, peeling the support from the substrate of the laminate The stripping step.
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TWI829627B (en) * 2016-11-28 2024-01-21 日商三井金屬鑛業股份有限公司 Adhesive sheet and peeling method

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TWI678403B (en) 2019-12-01
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US9607875B2 (en) 2017-03-28

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