TW201501861A - Cmp apparatus and cmp method - Google Patents

Cmp apparatus and cmp method Download PDF

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Publication number
TW201501861A
TW201501861A TW103102591A TW103102591A TW201501861A TW 201501861 A TW201501861 A TW 201501861A TW 103102591 A TW103102591 A TW 103102591A TW 103102591 A TW103102591 A TW 103102591A TW 201501861 A TW201501861 A TW 201501861A
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TW
Taiwan
Prior art keywords
pressure
air
polished
cylinder
polishing
Prior art date
Application number
TW103102591A
Other languages
Chinese (zh)
Inventor
Tokinori Terada
Original Assignee
Leap Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to PCT/JP2013/000917 priority Critical patent/WO2014128754A1/en
Application filed by Leap Co Ltd filed Critical Leap Co Ltd
Publication of TW201501861A publication Critical patent/TW201501861A/en

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Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/27Work carriers
    • B24B37/30Work carriers for single side lapping of plane surfaces
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/005Control means for lapping machines or devices
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents

Abstract

A chemical mechanical polishing apparatus in which a rotating head having a polishing pad mounted thereon is caused to press against and contact the surface of an article to be polished mounted face-up on a table, caused to rotate and polish the article for a prescribed amount of time with the table held still as a slurry is supplied to the contact surface, and then caused to move on the surface of the article, sequentially polishing the entire surface of the polishing object, the area of the polishing pad where contact with the article to be polished is made being less than the surface area of the article to be polished; wherein the apparatus is provided with a pressure adjustment mechanism for maintaining a fixed pressing load on the contact surface during polishing.

Description

Chemical mechanical polishing device

The present invention relates to a CMP (Chemical Mechanical Polishing) device and a CMP which are formed by polishing a surface of an insulating film, a metal film or a semiconductor film which is formed on a main surface of a semiconductor wafer or a resin mold. method.

Today's semiconductor integrated circuits have a multilayer wiring structure because of their fineness and high integration. In the previous wiring forming process in the multilayer wiring structure, a metal such as aluminum deposited on the insulating film is photolithographically and etched, thereby being processed to form a metal wiring pattern. However, recently, in the multilayer wiring forming process, copper wiring is gradually used. Mosaic process.

Further, when a metal or resin transfer mold is used to manufacture an electronic component having a fine line width of a coil component or the like, the copper deposited on the mold by the plating treatment is flatly polished by CMP, only in the through hole or the wiring recess. Copper remains in the trench to form buried copper wiring.

In Fig. 7a, the CMP method described in the representative CMP apparatus 700 of Patent Document 1 is shown. In the CMP method, a rotating table (lower surface plate) 720 to which a polishing cloth or a polishing pad 710 is attached is pressed against a polishing target 730 such as a semiconductor wafer with the surface to be polished facing downward (face down) Fixedly holding the rotating head (upper surface plate) 740, and rotating the rotating head 740 and The table 720 is rotated, and a liquid slurry (abrasive) 760 is supplied to the polishing pad 710 by the nozzle 750, and the film of the lower surface (treated surface) of the object 730 is cut flat by chemical action and mechanical action. Chemical.

In the past, from the viewpoint of improving the in-plane uniformity of the polishing rate on the object to be polished 730, the load is kept constant throughout the object to be polished 730, and the speed and the grinding caused by the rotation of the polishing pad 710 are controlled. The speed of synthesizing the speed of the object 730 is substantially uniform in the surface to be processed.

However, in the CMP method described above, when the cross-sectional shape of the object 730 in the thickness direction of the object to be polished, that is, the plane of the surface to be polished which is not raised, as shown in FIG. 7b, when the surface is polished, the polishing range is When the cross-sectional shape in the thickness direction of the polishing plate has a raised object 730, the swell cannot be blended to polish the surface of the object 730. Therefore, as shown in Fig. 7c, the thickness of the polishing in the grinding range causes a difference.

Patent Documents 2 and 3 describe a CMP apparatus that can be polished to have a ridge that has a raised wafer in a cross-sectional shape.

The CMP apparatus described in Patent Document 2 has a rotating shaft of a central axis of a straight rotating table (rotary table), and is provided with a tool holder that can move in the direction of the parallel rotating shaft by a linear moving mechanism. A plurality of arc-shaped grindstones are disposed on the outer circumference of the tool holder, and the pressing force of the grindstones on the object to be polished is individually controlled so as to be correspondingly raised.

Moreover, the apparatus described in Patent Document 3 maintains the wafer on the wafer holder while maintaining the initial deformation or the amount of warpage, and has a partial depression corresponding to the surface state of the surface of the wafer or the like. The plurality of tubes of the polishing pad control the pressing force of each tube to uniformly grind the inside of the wafer.

However, all of the above devices have the disadvantage that the control mechanism is complicated.

[First technical literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open Publication No. 2007-12936

[Patent Document 2] Japanese Patent Laid-Open Publication No. 2000-263425

[Patent Document 3] Japanese Patent Laid-Open Publication No. 2002-246346

The present invention solves the problems of the prior art as described above, and an object of the present invention is to provide a polishing object having a swell in a cross-sectional shape by using a relatively simple control mechanism, which can be lapped to be ground, and which can be stabilized. A CMP method and a CMP apparatus for grinding.

In order to achieve the above object, in the chemical mechanical polishing apparatus according to the first aspect of the present invention, the contact area with the object to be polished is much smaller than the surface area of the object to be polished, and the rotary head to which the polishing pad is attached is raised, and the table is raised to press the contact. The surface of the object to be lifted on the table that can be raised and lowered is assembled face up, and the slurry is continuously supplied to the contact surface. When the table is kept stationary, the rotating head is rotated, and after grinding for a predetermined time, the rotating head is ground. Moving within the surface of the object, sequentially polishing all surfaces of the object to be polished, characterized in that it is provided with: a lifting control mechanism for setting a lower surface of the rotating head at a position lower than a rising position of the table; and pressure adjustment The mechanism, in the grinding, is a certain load determined by the pressure of the compressed air by the rising table, and is pressed from the table to the rotating head, thereby keeping the pressing load of the contact surface constant; the pressure adjusting mechanism includes: a support shaft, along The central shaft supports the table; the pressure cylinder maintains the support shaft to slide along the central axis; the pressure chamber has The air inflow port and the air outflow port are formed in the pressure cylinder; and the air pressure adjusting mechanism is disposed on the support shaft located in the pressure chamber.

In the chemical mechanical polishing apparatus of the present invention, the pressure adjusting mechanism includes: a support shaft that supports the table along the central axis; a pressure cylinder that keeps the support shaft slidable along the central axis; and a pressure chamber having an air flow inlet and an air flow The outlet is formed in the pressure cylinder; and the air pressure adjusting mechanism is disposed on the support shaft located in the pressure chamber.

In the chemical mechanical polishing apparatus of the present invention, the air pressure adjusting mechanism has a separation wall that is separated into a first pressure chamber and a second pressure chamber, the first pressure chamber has an air flow inlet of the pressure chamber, and the second pressure chamber has an air flow. The outlet adjusts the amount of air moving from the first pressure chamber to the second pressure chamber through a small opening provided in the separation wall or a gap between the separation wall and the inner wall surface of the pressure cylinder, thereby controlling the air pressure in the pressure chamber .

In the chemical mechanical polishing apparatus of the present invention, the contact area with the object to be polished is much smaller than the surface area of the object to be polished, so that the rotating head to which the polishing pad is attached is raised, and the rising table is assembled with the pressing contact surface up. The surface of the object to be lifted on the table can be continuously supplied with the slurry to the contact surface, and while the table is stationary, the rotary head is rotated, and after the polishing for a predetermined time, the rotary head is moved within the surface of the object to be polished. The surface of the object to be polished is sequentially polished, and is characterized in that: a lifting control mechanism is provided to set a lower surface of the rotating head at a position lower than a rising position of the table; and a pressure adjusting mechanism, which is above the grinding center Lifting the table and taking a certain load determined by the pressure of the compressed air, pressing from the table to the rotating head, thereby keeping the pressing load of the contact surface constant; the pressure adjusting mechanism has: an inner cylinder pressure cylinder, and the upper surface makes the table Keep level, in a pressure chamber is formed inside; an outer cylinder pressure cylinder keeps the inner cylinder pressure cylinder from sliding along the central axis; the base has an air flow inlet and an air flow outlet, and the outer cylinder pressure cylinder is maintained; and the air pressure control unit is adjusted from The air inflow port flows in, and the amount of air flowing out from the air outflow port, thereby controlling the air pressure in the pressure chamber.

In the chemical mechanical polishing apparatus of the present invention, the table is detachably mounted to the support shaft.

In the chemical mechanical polishing apparatus of the present invention, the table is detachably attached to the upper surface of the inner cylinder pressure cylinder.

In the chemical mechanical polishing apparatus of the present invention, a nozzle that is close to the rotary head to supply the slurry is disposed, and is continuously moved in synchronization with the rotary head to supply the slurry.

In the chemical mechanical polishing apparatus of the present invention, a container capable of containing a slurry is assembled on a table.

In the chemical mechanical polishing apparatus of the present invention, a recess is provided in the vicinity of the center of the facing surface of the object to be polished of the rotary head.

Further, in the chemical mechanical polishing method according to the second aspect of the present invention, the contact area with the object to be polished is much smaller than the surface area of the object to be polished, and the rotating head to which the polishing pad is attached is raised, and the table is raised to press the surface. The surface of the object to be lifted on the table that can be raised and lowered is assembled upward, and the slurry is continuously supplied to the contact surface. When the table is kept stationary, the rotating head is rotated, and after grinding for a predetermined time, the rotating head is polished. The surface is moved in the order, and all the surfaces of the object to be polished are sequentially polished, and the pressing load of the contact surface is kept constant during polishing.

In the chemical mechanical polishing method of the present invention, the surface of the object to be polished is divided into a plurality of fields to be polished, corresponding to the respective fields to be polished. The thickness of the cross section, while making the polishing time different, sequentially presses the contact rotating head to grind.

According to the chemical mechanical polishing apparatus and the polishing method of the present invention, even if the surface to be polished of the object to be polished has a bulge, the ridge can be blended for polishing, so that a stable polishing process can be realized.

110‧‧‧ polishing pad

120‧‧‧Table

130‧‧‧ Grinding objects

140‧‧‧Rotating head

145‧‧‧ dent

150‧‧‧ nozzle

160‧‧‧Support shaft

162‧‧‧1st shaft expansion

164‧‧‧2nd shaft expansion

166‧‧‧Small openings

200‧‧‧pressure cylinder

202‧‧‧Air inlet

204‧‧‧Air outlet

210‧‧‧ Pressure chamber

500‧‧‧ container

550‧‧‧Slurry

600‧‧‧ Pressure chamber

610‧‧‧Inner cylinder

620‧‧‧Outer cylinder pressure cylinder

630‧‧‧Base

640‧‧ Air Control Department

Fig. 1 is a perspective view showing the configuration of an important part of the CMP apparatus of the present invention.

Fig. 2 is a cross-sectional view showing an example of a pressure adjusting mechanism of the CMP apparatus of the present invention.

Fig. 3 is a view showing a schematic configuration of a CMP apparatus according to an embodiment of the present invention.

Fig. 4 is a block diagram showing an example of an air pressure control unit shown in Fig. 3.

Figure 5 is a cross-sectional view showing another embodiment of the pressure adjusting mechanism of the CMP apparatus of the present invention.

Fig. 6 is a schematic configuration diagram of a CMP apparatus according to an embodiment of the present invention having an air control unit 640 shown in Fig. 5.

Fig. 7 is a perspective view showing the configuration of important parts of the prior CMP apparatus.

Fig. 8 is a cross-sectional view showing a state in which the slurry storage container is mounted to the table.

Figure 9 is a cross-sectional view showing the construction of the slurry attachment 800.

Fig. 10 is a view showing the control mechanism of the rotary head 140.

Fig. 11 is a view showing a plane of a rotary head provided with a recess.

Hereinafter, the best mode for carrying out the invention will be described with reference to the accompanying drawings.

Fig. 1 is a perspective view showing the configuration of an important part of the CMP apparatus 100 of the present invention. In the CMP apparatus of the present invention, the polishing object 130 having the unevenness, that is, the wafer or the resin mold having the surface raised thereon, is assembled on the table 120 with the polishing surface facing upward. Therefore, the area of the assembly surface of the table 120 is only slightly larger than the surface area of the object to be polished 130. When the polishing object 130 that is generally used is a disk shape having a diameter of 4 inches, it is the same as that shown in FIG. Previous CMP devices were very small compared to the previous ones.

The rotary head 140 to which the polishing pad 110 is assembled is operated to press-contact the surface of the polishing object 130. Further, as is clear from Fig. 1, the contact area of the rotary head 140 with the object to be polished 130 is much smaller than the surface area of the object to be polished. Therefore, the rotary head 140 in which the polishing pad 110 is assembled is only partially in contact with the polishing target 130. Further, after the rotary head 140 is rotated to polish the contact surface of the contact portion for a predetermined period of time, the rotary head 140 is horizontally moved by a predetermined distance along the X and Y axes to perform polishing of different contact faces. In this manner, the rotary head 140 is sequentially polished in the X and Y directions while being moved in the X and Y directions on the surface of the object to be polished 130.

Therefore, in the CMP apparatus of the present invention, in the stationary state without rotation, only the rotary head 140 is rotated and moved, whereby the polishing is performed. Further, a nozzle 150 that is close to the rotary head 140 to supply the slurry to the contact surface is disposed, and the nozzle 150 moves in synchronization with the movement of the rotary head 140 to continuously supply the slurry. In this way, the movement of the nozzle 150 is synchronized with the movement of the rotary head 140, Thereby, the slurry can be efficiently supplied to the contact surface.

The main feature of the present invention is to reduce the contact surface and keep the pressing load of the contact surface during grinding constant. Thereby, the amount of polishing in the thickness direction per predetermined time on the entire contact surface becomes constant.

As described above, in the CMP apparatus of the present invention, the area of the contact surface is much smaller than the surface area of the object to be polished 130. Therefore, even if the surface of the object to be polished 130 has a bulge, the contact surface is disposed along the ridge. The amount of grinding becomes constant.

As a result, as shown in Fig. 1b, the polishing range of the object to be polished can be kept constant along the range of the bulging.

In the present invention, the surface of the object to be polished is divided into a plurality of areas to be polished, and the polishing is performed only at a predetermined time in a predetermined load. However, the degree of swelling of the object to be polished may sometimes be in the section. Thickness can cause some unevenness.

In this case, as long as the thickness of the section is made, the polishing time can be made different. As described above, in the CMP apparatus of the present invention, the load on the contact surface (hereinafter referred to as local load) is kept constant as a main feature, and an embodiment of a pressure adjusting mechanism for realizing such a feature will be described.

Fig. 2 is a cross-sectional view showing an embodiment of a pressure adjusting mechanism of the CMP apparatus of the present invention. The pressure adjusting mechanism shown in FIG. 2 has a support shaft 160 that supports the table 120 along the central axis 122, a pressure cylinder 200 that supports the support shaft 160 to slide along the central axis 122, and a base 250 that is fixedly set. Cylinder 200. In the center of the cylinder 200, a through hole 240 for sliding the support shaft 160 is provided, and the base 250 is also provided with an opening for receiving the support shaft 160 at the lower end. 242. The support shaft 160 is supported by the bearings 230 and 232 provided on the inner side of the cylinder 200, so that it can slide up and down. In the cylinder 200, a pressure chamber 210 having an air inflow port 202 and an air outflow port 204 is formed.

The pressure chamber 210 is separated into a first pressure chamber 206 having an air inflow port 202 and a second pressure chamber 208 having an air outflow port 204. The separation wall used for the separation is provided in a portion of the support shaft 160 located in the pressure chamber 210, and the first shaft diameter expansion portion 162 and the second shaft diameter expansion portion 164 are provided, and the second shaft diameter expansion portion 164 can be configured. The outer diameter portion is slidably contacted to the inner wall surface of the pressure chamber 210. The second shaft diameter expansion portion 164 is formed in a thin wall, and the second shaft diameter expansion portion 164 is formed with one or a plurality of minute openings 166 having a diameter of about 100 μm. Further, the opening 166 is configured such that a predetermined gap is provided between the second shaft diameter expanding portion 164 and the inner wall surface of the cylinder 200, and it is not necessarily required to be provided.

In the cylinder 200 of such a configuration, when a predetermined air pressure compressed air 260 flows from the air inflow port 202 into the first pressure chamber 206, the air passes through the opening 166 to flow into the second pressure chamber 208, although from the air. The outflow port 204 flows out, but the opening 166 is minute. Therefore, a pressure difference is generated between the first pressure chamber 206 and the second pressure chamber 208, whereby the support shaft 160 is lifted upward, and is stationary with the support shaft 160 and The position of the gravity-balanced balance of the total mass of the table 120 supporting the support shaft 160. This rest position is determined by the pressure of the compressed air 260 flowing into the air flow inlet 202.

Here, if the control is such that the lower surface of the rotary head 140 is set to be lower than the rising position of the table 120, the lower surface of the rotary head 140 is pressed with a certain load determined by the pressure of the compressed air 260. Contacted to the table 120.

The certain load necessary for grinding can be set by controlling the pressure of the compressed air.

Fig. 3 is a view showing a schematic configuration of a CMP apparatus according to an embodiment of the present invention. The same components as those shown in FIGS. 1 and 2 are denoted by the same reference numerals, and detailed description thereof will be omitted.

In the CMP apparatus of the present invention, a lifting/moving/rotating control unit 302 for controlling the lifting/moving/rotating/rotating of the rotary head 140, a slurry supply unit 304 for supplying the slurry to the nozzle 150, and an air pressure control unit 306 are provided. For controlling the air pressure of the compressed air 260; the pressure detector 308 for detecting the pressing load of the contact surface: and the main control unit 310 for controlling the lifting/moving/rotating control unit 302, the slurry supply unit 304, and Air pressure control unit 306.

The lifting/moving/rotating control unit 302 controls the stop position of the rotary head 140, the amount of movement in the XY direction, the timing, and the rotational speed of the rotary head 140, and transmits a control command in accordance with a control command 404 from the main control unit 310. 402 to the spin head 140 for control.

The slurry supply unit 304 controls the nozzle 150 to move synchronously with the rotary head 140, and continuously supplies the slurry, and controls the nozzle 150 in accordance with a control command 408 from the main control unit 310.

The air pressure control unit 306 controls the air pressure of the compressed air 260 supplied to the air inflow port 202, and performs control based on the control command 410 from the main control unit 310.

In the present invention, the pressure adjusting mechanism is operated as shown in FIG. 2 so that the pressing load of the contact surface between the polishing pad 110 and the polishing target 130 is maintained at a predetermined value. However, the pressing load after the operation may be, for example. Set pressure The force detector 308 is measured at a desired position of the rotary head 140. Further, based on the pressure signal 406 from the pressure detector 308, the main control unit 310 transmits the control command 410 to the air pressure control unit 306 such that the pressure signal becomes a predetermined value, whereby the air pressure control unit 306 adjusts the compressed air 260. Air pressure.

Fig. 4 is a block diagram showing an example of the air pressure control unit 306. The air pressure control unit 306 is composed of a pressure control circuit 450 that receives an operation command 410 from the main control unit 310, a pressure source 420, a valve body 430, and a pressure gauge 440. The pressure source 420 is, for example, a compressed air cylinder. The compressed air from the pressure source 420 is supplied to the air inflow port 202 through the valve body 430 and the pressure gauge 440, and is supplied to the air inflow port 202. However, the pressure control circuit 450 adjusts the valve body based on the measured value of the pressure gauge 440. The opening and closing amount of 430 is thereby controlled to control the air pressure of the supply compressed air 260 to a desired size.

Figure 5 is a cross-sectional view showing another embodiment of the pressure adjusting mechanism of the CMP apparatus of the present invention. The pressure adjusting mechanism shown in Fig. 5 has an inner cylinder pressure cylinder 610, with the upper surface 612 holding the table 120 horizontal, a pressure chamber 600 formed therein, and an outer cylinder pressure cylinder 620 for holding the inner cylinder pressure cylinder The 610 is slidable along the central axis 122; the base 630 has an air inflow port 602 and an air outflow port 604, the lower portion holds the outer cylinder pressure cylinder 620; and the air pressure control portion 640 is adjusted to flow in from the air inflow port 602 (Air IN), the amount of air flowing out of the air outlet 604 (Air OUT), thereby controlling the air pressure in the pressure chamber 600.

The inner cylinder pressure cylinder 610 has its outer wall surface slidably contacted to the inner wall surface of the outer cylinder pressure cylinder 620.

In the pressure adjusting mechanism configured as described above, when the air pressure control unit 640 transmits the compressed air of a predetermined air pressure, it flows into the pressure from the air inflow port 602. In the force chamber 600, the air pressure in the pressure chamber 600 rises in accordance with the amount of air flowing out from the air outflow port 604.

Thereby, the inner cylinder pressure cylinder 610 is lifted upward, and is stationary at a position balanced with the gravity of the total mass of the inner cylinder pressure cylinder 610 and the table 120 held by the inner cylinder pressure cylinder 610. This rest position is determined by the air pressure in the pressure chamber 600.

Here, if the control is such that the lower surface of the rotary head 140 is set to be lower than the raised position of the table 120, the lower surface of the rotary head 140 is determined by the air pressure in the pressure chamber 600. Pressing and touching the table 120.

In this way, the air pressure control unit 640 controls the air pressure in the pressure chamber 600 to set a certain load necessary for the grinding.

Fig. 6 is a schematic configuration diagram of a CMP apparatus according to an embodiment of the present invention having an air control unit 640 shown in Fig. 5. The same components as those shown in FIG. 5 are denoted by the same reference numerals, and detailed description thereof will be omitted.

The air pressure control unit 640 is a mass flow controller that compresses air from the outside to become a compression pump 642 for compressed air, an air valve 644 that adjusts the amount of compressed air supplied, and a flow rate of compressed air that controls the inflow of the air inlet 602. (MFC) 646 is formed by a needle valve 648 and a pressure escape valve 650 that are connected to the air flow outlet 604 and control the air outflow amount. The opening degree of the needle valve 648 is controlled by the control command 646a from the MFC 646, whereby the flow rate of the compressed air flowing into the air inlet port is maintained at a predetermined value, and the air pressure in the pressure chamber 600 is controlled to a desired size, thereby obtaining the necessary A certain load.

Moreover, in the above embodiment, the table 120 is fixedly mounted on the upper surface 612 of the support shaft 160 or the inner cylinder 610, but may be detachably mounted. Loading table 120.

Further, in the above embodiment, the slurry is supplied from the slurry supply unit 304 through the nozzle 150, but the object to be polished 130 may be always immersed in the slurry.

Fig. 8 is a cross-sectional view showing a state in which the slurry storage container is mounted to the table 120.

The container 500 capable of containing the slurry is mounted on the table 120 or the support shaft 160, and the container 500 is filled with the slurry 550 for polishing.

Fig. 9 is a cross-sectional view showing the structure of the slurry attachment 800 for attaching the table 500 to the table 120 in a loading and unloading type.

The table 120 must have a predetermined thickness, and the upper surface and the lower surface have sufficient flatness. In order to detachably assemble the slurry attachment 800 to the upper surface 612 of the inner cylinder 610 shown in Fig. 5 or the support shaft 160 shown in Fig. 2, as shown in Fig. 9a, a pin body 802 is provided to Inserting an insertion port (not shown) provided on the upper surface 612 of the inner cylinder pressure cylinder 610, or as shown in FIG. 9b, providing a screw hole 804, and engaging the upper part of the support shaft 160 with a male screw (not shown) ) to the screw hole 804.

Corresponding to the nature of the film to be ground or the amount of polishing, the amount of grinding can be controlled by changing the concentration, particle size and material of the slurry.

The replacement of the slurry can be carried out simply by replacing the slurry attachment 800. Moreover, it can be carried out by sucking the slurry which is in use and replacing it with a slurry having different concentrations, particle diameters and materials.

Fig. 10 is a view showing the control mechanism of the rotary head 140.

The rotary head 140 is mounted on a high speed rotary motor 170 that is mounted on a three-axis (X, Y, Z) control robot arm.

By rotating the robot arm 180 by three axes, the rotation of the rotary head 140 and the movement to the axial direction are controlled.

When the rotary head 140 is attached to the high-speed rotation motor 170 in a clamp manner, the rotary head 140 can be easily replaced in accordance with the polishing conditions. Also, if the three-axis control robot arm 180 is only prepared in the necessary number, it can be replaced with each of the three-axis control robot arms 180.

Moreover, the control factor of the grinding performed by the invention of the present application has the following factors.

1) The stagnation time of the contact surface of the rotating head

2) The concentration, particle size and material of the slurry

3) Pressing the load

4) The material of the rotating head and the shape of the contact surface

5) Rotating head rotation speed and horizontal moving speed

By properly controlling these factors separately, the desired grinding can be achieved.

Further, according to the actual results of the present inventors, although the reason is not fixed, it can be determined that when the recess 145 is provided as shown in FIG. 11a by the vicinity of the center of the object facing surface 147 of the polishing head 140, as shown in FIG. 11a, The surface of the abrasive object 130 can be ground more uniformly along the ridges.

It is presumed that the press weight applied to the polishing pad is weak in the portion of the recess 145, or the slurry tends to aggregate on the portion of the recess 145, but the detail is not determined.

As shown in Fig. 11b, it can be judged that when the rotating head 140 provided with the connecting hole 149 from the inverted wall reaching hole 148 is opened through the hole 148 near the center to be ground, it can be more uniformly ground. It is because of the rotation of the rotating head 140, the hole 148 The inside is under negative pressure and the slurry is sucked up.

Further, as shown in Fig. 11c, the connection groove 144 which is connected to the recess 145 near the center is provided on the polished surface of the rotary head 140, and the same result can be obtained.

This is because more slurry is taken in by the connection groove 144.

Hereinabove, the present invention has been described based on the embodiments, but the present invention is not limited thereto. As will be appreciated by the manufacturer, various modifications can be made to the pressure adjusting mechanism used in the present invention. For example, in the above embodiment, although the pressure detector is provided, the pressure signal from the pressure detector is fed back to adjust the air pressure, but the pressure detector may not be used, and the pressure load is set after the setting. Size does not change during grinding. Moreover, if the mechanism in which the rotary head is tilted along the ridge is provided, it can be correctly polished along the ridge.

Moreover, the area of the contact surface of the rotating head can also correspond to the period of the bulge, the adjustment is large when the period is long, and the adjustment is small when the period is short. The invention is very suitable for mirror polishing of a mold, or stripping of a film having a maximum film thickness of 100 nm.

Moreover, it can be applied not only to a three-dimensional structure, a lens, or a surface polishing of an object optically molded, but also to a spherical rubber and a nanoimprint.

100‧‧‧Chemical mechanical polishing device

110‧‧‧ polishing pad

120‧‧‧Table

130‧‧‧ Grinding objects

140‧‧‧Rotating head

150‧‧‧ nozzle

160‧‧‧Support shaft

Claims (8)

  1. A chemical mechanical polishing device, the contact area with the object to be polished is much smaller than the surface area of the object to be polished, so that the rotating head to which the polishing pad is attached is raised, and the table is raised to be pressed up and assembled upwards to be lifted and lowered The surface of the object to be polished on the table is continuously supplied with the slurry to the contact surface, and the rotating head is rotated while maintaining the table in a stationary state, and after the polishing is completed for a predetermined period of time, the rotating head is placed on the object to be polished. Moving in the surface, sequentially grinding all of the surface of the object to be polished, characterized in that: a lifting control mechanism is provided to set a lower surface of the rotating head at a position lower than a rising position of the table; and a pressure The adjusting mechanism is configured to increase the pressing load of the contact surface by pressing the table head to the rotating head by a predetermined load determined by the pressure of the compressed air by raising the table, and the pressure adjusting mechanism includes a support shaft that supports the aforementioned table along a central axis; a pressure cylinder that keeps the aforementioned support shaft slidable along the aforementioned central axis ; A pressure chamber having an air inlet and an air outlet, is formed in the cylinder pressure; and an air-pressure adjusting means, provided in the support shaft is located in the chamber of the pressure.
  2. The chemical mechanical polishing device according to claim 1, wherein The air pressure adjusting mechanism has a separation wall that is separated into a first pressure chamber and a second pressure chamber, the first pressure chamber has the air inlet of the pressure chamber, and the second pressure chamber has an air outlet, and is provided through the air outlet. a small opening of the separation wall, or a gap between the separation wall and the inner wall surface of the cylinder, adjusting the amount of air moving from the first pressure chamber to the second pressure chamber, thereby controlling the air in the pressure chamber Air pressure.
  3. A chemical mechanical polishing device, the contact area with the object to be polished is much smaller than the surface area of the object to be polished, so that the rotating head to which the polishing pad is attached is raised, and the table is raised to be pressed up and assembled upwards to be lifted and lowered The surface of the object to be polished on the table is continuously supplied with the slurry to the contact surface, and the rotating head is rotated while maintaining the table in a stationary state, and after the polishing is completed for a predetermined period of time, the rotating head is placed on the object to be polished. Moving in the surface, sequentially polishing all of the surface of the object to be polished, characterized in that: a lifting control mechanism is provided, and a lower surface of the rotating head is set at a position lower than a rising position of the table; The pressure adjusting mechanism is configured to increase the pressing load of the contact surface from the table by a predetermined load that is increased by the pressure of the compressed air by raising the table, and the pressure adjusting mechanism is kept constant. It has an inner cylinder pressure cylinder, and the above surface keeps the aforementioned table horizontal, and is formed inside. a pressure chamber; an outer cylinder pressure cylinder that keeps the inner cylinder pressure cylinder slidable along a central axis; a base having an air flow inlet and an air flow outlet for holding the outer cylinder pressure cylinder; and an air pressure control portion, adjusted from the foregoing The air inflow port flows in, and the amount of air flowing out from the air outlet port, thereby controlling the air pressure in the pressure chamber.
  4. The chemical mechanical polishing apparatus according to claim 1, wherein the table is detachably attached to the support shaft.
  5. The chemical mechanical polishing apparatus according to claim 3, wherein the table is detachably attached to an upper surface of the inner cylinder.
  6. The chemical mechanical polishing apparatus according to any one of claims 1 to 5, wherein a nozzle that is disposed close to the rotary head to supply a slurry is continuously moved in synchronization with the rotary head to supply a slurry.
  7. The chemical mechanical polishing apparatus according to any one of claims 1 to 5, wherein the container capable of containing the slurry is assembled on the table.
  8. The chemical mechanical polishing apparatus according to any one of claims 1 to 7, wherein a recess is provided in the vicinity of a center of a facing surface of the polishing target of the rotary head.
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CN105009257A (en) 2015-10-28
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JPWO2014128754A1 (en) 2017-02-02
WO2014128754A1 (en) 2014-08-28

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