TW201437406A - 不銹鋼表面處理方法及由該方法製得的外殼 - Google Patents
不銹鋼表面處理方法及由該方法製得的外殼 Download PDFInfo
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Abstract
本發明提供一種不銹鋼表面處理方法,包括如下步驟:提供不銹鋼基體;藉由多弧離子鍍在不銹鋼基體表面沉積打底層,該打底層為鈦金屬層;藉由多弧離子鍍在所述打底層上沉積過渡層,該過渡層為鋁金屬層;藉由磁控濺射方法在所述過渡層上沉積鋁膜;對該形成有打底層、過渡層及鋁膜的不銹鋼基體進行陽極氧化處理,以使該過渡層及鋁膜被氧化而形成多孔的陽極氧化膜;對該經陽極氧化處理的不銹鋼基體進行著色處理並封孔,以使不銹鋼基體表面獲得所需的顏色。本發明還提供一種上述不銹鋼表面處理方法製得的外殼。
Description
本發明涉及一種不銹鋼表面處理方法及由該方法製得的外殼。
不銹鋼具有較高的強度以及很好的耐腐蝕性等優點,經常被用做電子裝置外殼。為了於不銹鋼外殼表面獲得更好的裝飾性外觀,通常於其表面進行真空鍍膜,真空鍍膜雖然可以獲得金屬感很強的外觀,然顏色較為單調,而且顏色難以控製。相比之下,於鋁材上進行陽極處理能獲得顏色豐富的外觀,然經陽極處理的鋁材電阻高、導熱性低,作為電子裝置外殼不利於散熱,而且手感較差。
有鑒於此,本發明提供一種不銹鋼表面處理方法,可使不銹鋼表面獲得陽極氧化處理的外觀效果,進而可獲得顏色豐富的外觀。
另外,本發明還提供一種由上述方法製得的外殼。
一種不銹鋼表面處理方法,包括如下步驟:
提供不銹鋼基體;
藉由多弧離子鍍於不銹鋼基體表面沉積打底層,該打底層為鈦金屬層;
藉由多弧離子鍍於所述打底層上沉積過渡層,該過渡層為鋁金屬層;
藉由磁控濺射方法於所述過渡層上沉積鋁膜;
對該形成有打底層、過渡層及鋁膜的不銹鋼基體進行陽極氧化處理,以使該過渡層及鋁膜被氧化而形成多孔的陽極氧化膜;
對該經陽極氧化處理的不銹鋼基體進行著色處理並封孔,以使不銹鋼基體表面獲得所需的顏色。
一種由上述不銹鋼表面處理方法製得的外殼,包括不銹鋼基體,該外殼還包括形成於該不銹鋼基體表面的鈦形成於不銹鋼基體表面的打底層及形成於該打底層表面的鋁陽極氧化膜,該打底層為鈦金屬層。
上述不銹鋼表面處理方法,先採用多弧離子鍍於不銹鋼基體表面形成一層鈦金屬作為打底層及採用多弧離子鍍於該打底層上形成該鋁金屬過渡層;再藉由磁控濺射方法於該過渡層上形成該鋁膜;最後對鋁膜進行陽極氧化處理,以於不銹鋼基體表面獲得陽極氧化膜,再藉由著色處理使不銹鋼基體獲得所需的顏色,由此可使不銹鋼基體具有顏色豐富的外觀。該鈦金屬打底層主要起保護不銹鋼基體的作用,其可防止不銹鋼基體於後續陽極氧化處理過程中不被腐蝕,且該打底層藉由多弧離子鍍形成,沉積速度快,且與不銹鋼基體具有較高的結合力。另外,於磁控濺射該鋁膜之前,先藉由多弧離子鍍形成該鋁金屬過渡層,該過渡層具有較高的附著力,且與後續的鋁膜具有相同的組成,可提高鋁膜的附著力。而鋁膜採用磁控濺射方法形成,使鋁膜比較細膩、光滑。
10...外殼
11...不銹鋼基體
13...打底層
17...鋁陽極氧化膜
100...真空鍍膜設備
20...真空室
30...轉架
40...真空抽氣系統
50...弧源裝置
61...鈦靶
62...鋁靶
63...磁控鋁靶
圖1係本發明較佳實施例不銹鋼表面處理方法的步驟流程圖。
圖2係本發明較佳實施例不銹鋼表面處理方法過程中所用真空鍍膜設備的結構示意圖。
圖3係本發明較佳實施例外殼的剖面示意圖。
請參閱圖1,本發明的不銹鋼表面處理方法,主要包括如下步驟:
提供不銹鋼基體。該不銹鋼基體可具有所需的產品形狀。
藉由多弧離子鍍於不銹鋼基體表面沉積打底層。該打底層為鈦金屬層,其厚度為1.5μm-2.5μm。
多弧離子鍍製備該打底層是於一真空鍍膜設備100(參圖2)中進行。該真空鍍膜設備100為多功能鍍膜設備,其可進行多弧離子鍍及磁控濺射。該真空鍍膜設備100包括真空室20、位於真空室20內的轉架30、用以對真空室20抽真空的真空抽氣系統40、以及若干個弧源裝置50。沉積該打底層時,將若干個鈦靶61置於弧源裝置50的弧源位置上。將不銹鋼基體固定於所述轉架30上。真空室20被抽真空至3×10-3Pa-8×10-3Pa後,向真空室20內充入惰性氣體,如氬氣,使真空室20內壓力為0.1Pa-0.8Pa。調節真空室20內溫度為90℃-105℃。對所述鈦靶61施加200V-300V的負偏壓,設置偏壓電源的佔空比為40-50%。開啟所述鈦靶61的電源,並調節鈦靶61電壓為15V-30V,電流為50A-80A,以於不銹鋼基體上沉積所述打底層(鈦金屬層),沉積時間為10-25分鐘。藉由多弧離子鍍於所述打底層上沉積過渡層。該過渡層為鋁金屬層,其厚度為13μm-22μm。多弧離子鍍製備該過渡層是於所述真空鍍膜設備100中進行。將若干個鋁靶62置於弧源裝置50的弧源位置上。將形成有所述打底層的不銹鋼基體固定於所述轉架30上。真空鍍膜設備的真空室20被抽真空至3×10-3Pa-8×10-3Pa後,向真空室20充入惰性氣體,如氬氣,使真空室內壓力為0.1Pa-0.9Pa。調節真空室內溫度為90℃-115℃。對所述鋁靶62施加200V的負偏壓,設置偏壓電源的佔空比為45%。開啟所述鋁靶62的電源,並調節鋁靶62電壓為15V-35V,電流為40A-70A,以於打底層上沉積所述過渡層(鋁金屬層),沉積時間為25-60分鐘。
藉由磁控濺射方法於所述過渡層上沉積鋁膜。該鋁膜的厚度為3μm-5μm。
磁控濺射製備該鋁膜是於所述真空鍍膜設備100中進行。該真空鍍膜設備100的真空室20中設置有若干個磁控鋁靶63。將形成有所述打底層及過渡層的不銹鋼基體固定於所述轉架30上。真空室20被抽真空至3×10-3Pa-8×10-3Pa後,向真空室20充入惰性氣體,如氬氣,使真空室20內壓力為0.1Pa-0.9Pa。調節真空室20內溫度為120℃-130℃。對所述磁控鋁靶63施加250V的負偏壓,設置偏壓電源的佔空比為40%。開啟所述磁控鋁靶63的電源,並調節電源功率為5kW-6kW,對不銹鋼基體濺射50-70分鐘,以於所述過渡層表面形成所述鋁膜。
對該形成有打底層、過渡層及鋁膜的不銹鋼基體進行陽極氧化處理。所述陽極氧化處理可以不銹鋼基體為陽極,不銹鋼片為陰極,以硫酸溶液為電解液。硫酸濃度可為190g/L-210g/L,電解液溫度為8℃-13℃,採用恒電壓模式,恒定電壓為13V,氧化時間為10min-15min。為了防止電解液中的硫酸腐蝕到不銹鋼基體,該陽極氧化處理的時間比通常的陽極處理時間減少20min左右。
經該陽極氧化處理後,所述過渡層及鋁膜被氧化而形成多孔的陽極氧化膜。
對該經陽極氧化處理的不銹鋼基體進行著色處理並封孔,以使不銹鋼基體表面獲得所需的顏色。所述著色處理可以為電解著色或物理吸附著色。著色處理後熱水封孔,水溫為95℃-98℃,封孔時間為10min-20min。
沉積所述打底層、過渡層及最外層時,佔空比逐漸變小,對應的沉積速率逐漸降低,有利於提高膜層的結合力。
上述不銹鋼表面處理方法,先採用多弧離子鍍於不銹鋼基體表面形成一層鈦金屬作為打底層及採用多弧離子鍍於該打底層上形成該鋁金屬過渡層;再藉由磁控濺射方法於該過渡層上形成該鋁膜;最後對鋁膜進行陽極氧化處理,以於不銹鋼基體表面獲得陽極氧化膜,再藉由著色處理使不銹鋼基體獲得所需的顏色,由此可使不銹鋼基體具有顏色豐富的外觀。該鈦金屬打底層主要起保護不銹鋼基體的作用,其可防止不銹鋼基體於後續陽極氧化處理過程中不被腐蝕,且該打底層藉由多弧離子鍍形成,沉積速度快,且與不銹鋼基體具有較高的結合力。另外,於磁控濺射該鋁膜之前,先藉由多弧離子鍍形成該鋁金屬過渡層,該過渡層具有較高的附著力,且與後續的鋁膜具有相同的組成,可提高鋁膜的附著力。而鋁膜採用磁控濺射方法形成,使鋁膜比較細膩、光滑。
可以理解,該不銹鋼表面處理方法還可包括於沉積所述打底層之前對不銹鋼基體進行如下前處理:首先對不銹鋼基體進行打磨拋光;然後對不銹鋼基體進行化學除油清洗以及物理清洗除去殘留物。
請參閱圖3,由上述不銹鋼表面處理方法製得的外殼10包括一不銹鋼基體11、形成於不銹鋼基體11表面的打底層13、及形成於打底層13表面的鋁陽極氧化膜17。該打底層13為鈦金屬層,其厚度為1.5μm-2.5μm。該鋁陽極氧化膜17的厚度為18μm-25μm。
下麵結合具體實施例,對本發明進行進一步詳細說明。
實施例1
藉由多弧離子鍍於不銹鋼基體表面沉積鈦層作為打底層。將8個鈦靶置於真空鍍膜設備的弧源位置上。將不銹鋼基體固定於真空鍍膜設備的轉架上。真空鍍膜設備的真空室被抽真空至5×10-3Pa後,向真空室內充入流量為100sccm(標準狀態毫升/分鐘)的氬氣,使真空室內壓力為0.2Pa。調節真空室內溫度為95℃。對所述鈦靶施加300V的負偏壓。調節佔空比為50%。開啟所述鈦靶電源,並調節鈦靶電壓為30V,電流為75A,以於不銹鋼基體上沉積所述打底層(鈦金屬層),沉積10分鐘。該打底層的厚度大約為2μm。
於所述真空鍍膜設備中藉由多弧離子鍍於所述打底層上沉積過渡層。將8個鋁靶置於真空鍍膜設備的弧源位置上。繼續向真空室充入流量為100sccm的氬氣,使真空室內壓力保持為0.2Pa。保持真空室內溫度為95℃。對所述鋁靶施加200V的負偏壓。調節佔空比為45%。開啟所述鋁靶電源,並調節鋁靶電壓為25V,電流為70A,以於打底層上沉積該過渡層(鋁金屬層),沉積時間為60分鐘。該過渡層的厚度大約為13μm。
於所述真空鍍膜設備中藉由磁控濺射方法於所述過渡層上沉積鋁膜。於該真空鍍膜設備的真空室中設置有2對磁控鋁靶。向真空室內充入流量為250sccm的氬氣,使真空室內壓力保持為0.23Pa。調節真空室內溫度為120℃。對所述磁控鋁靶施加250V的負偏壓。調節佔空比為40%。開啟所述磁控鋁靶電源,並調節電源功率為5kW,對不銹鋼基體濺射70分鐘,以於所述過渡層表面形成所述鋁膜。該鋁膜的厚度大約為5μm。
然後,以該形成有打底層、過渡層及鋁膜的不銹鋼基體為陽極,以不銹鋼片為陰極,以硫酸溶液為電解液進行陽極處理。硫酸濃度為195g/L,電解液溫度為12℃,採用恒電壓模式,恒定電壓為13V,氧化時間為18min。
對該經陽極處理的不銹鋼基體採用物理吸附有機染料著色並封孔處理,以使不銹鋼基體表面獲得所需的顏色。
實施例2
通過多弧離子鍍於不銹鋼基體表面鍍覆鈦層作為打底層。將8個鈦靶置於真空鍍膜設備的弧源位置上。將不銹鋼基體固定於真空鍍膜設備的轉架上。真空鍍膜設備的真空室被抽真空至5×10-3Pa後,向真空室內充入流量為80sccm(標準狀態毫升/分鐘)的氬氣,使真空室內壓力為0.15Pa。調節真空室內溫度為105℃。對所述鈦靶施加300V的負偏壓。調節佔空比為50%。開啟所述鈦靶電源,並調節鈦靶電壓為20V,電流為70A,以於不銹鋼基體上沉積所述打底層(鈦金屬層),沉積25分鐘。該打底層的厚度大約為1.5μm。
於所述真空鍍膜設備中通過多弧離子鍍於所述打底層上鍍覆過渡層。將8個鋁靶置於真空鍍膜設備的弧源位置上。繼續向真空室充入流量為80sccm的氬氣,使真空室內壓力保持為0.15Pa。保持真空室內溫度為105℃。對所述鋁靶施加200V的負偏壓。調節佔空比為45%。開啟所述鋁靶電源,並調節鋁靶電壓為20V,電流為70A,以於打底層上沉積該過渡層(鋁金屬層),沉積時間為60分鐘。該過渡層的厚度大約為13μm。
於所述真空鍍膜設備中藉由磁控濺射方法於所述過渡層上鍍覆鋁膜。於該真空鍍膜設備的真空室中設置有2對磁控鋁靶。向真空室內充入流量為250sccm的氬氣,使真空室內壓力保持為0.17Pa。調節真空室內溫度為130℃。對所述磁控鋁靶施加250V的負偏壓。調節佔空比為40%。開啟所述磁控鋁靶電源,並調節電源功率為6kW,對不銹鋼基體濺射50分鐘,以於所述過渡層表面形成所述鋁膜。該鋁膜的厚度大約為4μm。
然後,以該形成有打底層、過渡層及鋁膜的不銹鋼基體為陽極,以不銹鋼片為陰極,以硫酸溶液為電解液進行陽極處理。硫酸濃度為210克/L,電解液溫度為13℃,採用恒電壓模式,恒定電壓為12V,氧化時間為18min。
對該經陽極氧化處理的不銹鋼基體採用物理吸附有機染料著色並封孔處理,以使不銹鋼基體表面獲得所需的顏色。
Claims (9)
- 一種不銹鋼表面處理方法,包括如下步驟:
提供不銹鋼基體;
藉由多弧離子鍍於不銹鋼基體表面沉積打底層,該打底層為鈦金屬層;
藉由多弧離子鍍於所述打底層上沉積過渡層,該過渡層為鋁金屬層;
藉由磁控濺射方法於所述過渡層上沉積鋁膜;
對該形成有打底層、過渡層及鋁膜的不銹鋼基體進行陽極氧化處理,以使該過渡層及鋁膜被氧化而形成多孔的陽極氧化膜;
對該經陽極氧化處理的不銹鋼基體進行著色處理並封孔,以使不銹鋼基體表面獲得所需的顏色。 - 如申請專利範圍第1項所述之不銹鋼表面處理方法,其中沉積該打底層、過渡層及鋁膜是於同一真空鍍膜設備中進行,該真空鍍膜設備包括真空室、位於真空室內的轉架、用以對真空室抽真空的真空抽氣系統、以及若干個弧源裝置。
- 如申請專利範圍第2項所述之不銹鋼表面處理方法,其中沉積該打底層時,將若干個鈦靶置於真空鍍膜設備的弧源位置上,將不銹鋼基體固定於所述轉架上,該真空室被抽真空至3×10-3Pa-8×10-3Pa後,向真空室內充入惰性氣體,使真空室內壓力為0.1Pa-0.8Pa,調節真空室內溫度為90℃-105℃,對所述鈦靶施加200V-300V的負偏壓,設置偏壓電源的佔空比為40-50%,開啟所述鈦靶的電源,並調節鈦靶電壓為15V-30V,電流為50A-80A,於不銹鋼基體上沉積該打底層,沉積時間為10-25分鐘。
- 如申請專利範圍第2項所述之不銹鋼表面處理方法,其中沉積該過渡層時,將若干個鋁靶置於該真空鍍膜設備的弧源位置上,將形成有所述打底層的不銹鋼基體固定於所述轉架上,該真空室被抽真空至3×10-3Pa-8×10-3Pa後,向真空室充入惰性氣體,使真空室內壓力為0.1 Pa-0.9Pa,調節真空室內溫度為90℃-115℃,對所述鋁靶施加200V的負偏壓,設置偏壓電源的佔空比為45%,開啟所述鋁靶的電源,並調節鋁靶電壓為15V-35V,電流為40A-70A,於打底層上沉積該過渡層,沉積時間為25-60分鐘。
- 如申請專利範圍第2項所述之不銹鋼表面處理方法,其中沉積該鋁膜時,於所述真空室中設置若干個磁控鋁靶,將形成有所述打底層及過渡層的不銹鋼基體固定於所述轉架上,該真空室被抽真空至3×10-3Pa-8×10-3Pa後,向真空室充入惰性氣體,使真空室內壓力為0.1Pa-0.9Pa,調節真空室內溫度為120℃-130℃,對所述磁控鋁靶施加250V的負偏壓,設置偏壓電源的佔空比為40%,開啟所述磁控鋁靶的電源,並調節電源功率為5kW-6kW,對不銹鋼基體濺射50-70分鐘,以於所述過渡層表面形成所述鋁膜。
- 如申請專利範圍第1項所述之不銹鋼表面處理方法,其中所述陽極氧化處理是以不銹鋼基體為陽極,不銹鋼片為陰極,以硫酸溶液為電解液;硫酸濃度為190g/L-210g/L,電解液溫度為8℃-13℃,採用恒電壓模式,恒定電壓為13V,處理時間為10min-15min。
- 一種外殼,包括不銹鋼基體,其改良在於:該外殼還包括形成於該不銹鋼基體表面的打底層及形成於該打底層表面的鋁陽極氧化膜,該打底層為鈦金屬層。
- 如申請專利範圍第7項所述之外殼,其中所述打底層的厚度為1.5μm-2.5μm。
- 如申請專利範圍第7項所述之外殼,其中所述鋁陽極氧化膜的厚度為18μm-25μm。
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TWI560299B (en) | 2016-12-01 |
JP2014129601A (ja) | 2014-07-10 |
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