TW201320341A - Semiconductor device - Google Patents

Semiconductor device Download PDF

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Publication number
TW201320341A
TW201320341A TW101134471A TW101134471A TW201320341A TW 201320341 A TW201320341 A TW 201320341A TW 101134471 A TW101134471 A TW 101134471A TW 101134471 A TW101134471 A TW 101134471A TW 201320341 A TW201320341 A TW 201320341A
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Taiwan
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layer
oxide semiconductor
conductive layer
semiconductor device
transistor
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TW101134471A
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Chinese (zh)
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TWI570923B (en
Inventor
Shunpei Yamazaki
Atsuo Isobe
Yutaka Okazaki
Takehisa Hatano
Sachiaki Tezuka
Suguru Hondo
Toshihiko Saito
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Semiconductor Energy Lab
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Application filed by Semiconductor Energy Lab filed Critical Semiconductor Energy Lab
Publication of TW201320341A publication Critical patent/TW201320341A/en
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Publication of TWI570923B publication Critical patent/TWI570923B/en

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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725Source or drain electrodes for field effect devices
    • H01L29/41733Source or drain electrodes for field effect devices for thin film transistors with insulated gate
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312Gate electrodes for field effect devices
    • H01L29/42316Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42384Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

A highly reliable structure for high-speed response and high-speed driving of a semiconductor device, in which on-state characteristics of a transistor are increased is provided. In the coplanar transistor, an oxide semiconductor layer, a source and drain electrode layers including a stack of a first conductive layer and a second conductive layer, a gate insulating layer, and a gate electrode layer are sequentially stacked in this order. The gate electrode layer is overlapped with the first conductive layer with the gate insulating layer provided therebetween, and is not overlapped with the second conductive layer with the gate insulating layer provided therebetween.

Description

Semiconductor device

The present invention relates to a semiconductor device and a method of fabricating the same.

Note that in the present specification, a semiconductor device refers to all devices that can function by utilizing semiconductor characteristics, and therefore, an electro-optical device, a semiconductor circuit, and an electronic device are all semiconductor devices.

A technique of forming a transistor (also referred to as a thin film transistor (TFT)) by using a semiconductor thin film formed on a substrate having an insulating surface is attracting attention. The transistor is widely used in electronic devices such as an integrated circuit (IC) and an image display device (display device). As a semiconductor thin film which can be applied to a transistor, a germanium-based semiconductor material is widely known. However, as other materials, oxide semiconductors have attracted attention.

For example, a top gate type and a Coplaner Type transistor using an amorphous oxide containing indium (In), gallium (Ga), and zinc (Zn) as an active layer of a transistor has been disclosed ( Refer to Patent Document 1).

[Patent Document 1] Japanese Patent Application Publication No. 2006-165528

In order to improve the on-state characteristics (for example, on-current or field-effect mobility) of the transistor to achieve high-speed response and high-speed driving of the semiconductor device, it is preferable to use a region where the channel formation region to be the active layer is surely overlapped. The structure of the gate electrode. By adopting this structure, the gate voltage can be surely applied to the channel formation region between the source and the drain, so that the resistance between the source and the drain can be reduced.

In the coplanar type transistor, in the case where the source electrode and the drain electrode are provided separately from both ends of the gate electrode of the transistor, the gate electrode and the source electrode and the gate electrode are seen when the top surface or the cross section is seen. A gap is formed between the electrode electrodes. This gap becomes a resistance when the transistor is operated.

In the bismuth-based semiconductor material, the semiconductor region to be the gap is implanted with impurities to reduce the resistance of the region of the gap, and the gate electrode is surely overlapped with the region forming the channel formation region of the active layer. To improve the conduction characteristics. On the other hand, when an oxide semiconductor is used for a semiconductor material, in order to achieve low resistance in the region, it is preferable to make the end portions of the source electrode and the gate electrode and the end portions of the gate electrode coincide with each other or overlap each other. Settings.

However, in a structure in which the source electrode and the end portion of the gate electrode and the end portion of the gate electrode of the transistor are coincident or overlap each other when the top surface or the cross section is seen, a short circuit between the electrodes becomes a problem. The short circuit between the electrodes is caused by the failure of the coverage of the gate insulating layer when the gate insulating layer is provided on the source electrode and the gate electrode and the oxide semiconductor layer. In particular, when the gate insulating layer is thinned with the miniaturization of the transistor, the coverage failure is easily noticeable.

The gate insulating layer formed on the source electrode and the drain electrode and on the oxide semiconductor layer is likely to be short due to coverage failure or the like particularly in a region in contact with the oxide semiconductor layer which becomes the channel formation region. road. In order to improve the conduction characteristics, the source electrode and the drain electrode are formed thicker than the gate insulating layer in many cases. Therefore, when the gate insulating layer is formed thin, the thickening of the source electrode and the drain electrode causes the coverage of the end portions of the source electrode and the drain electrode to be more defective. As a result, a short circuit between the electrodes is easily generated and a decrease in reliability is caused.

Accordingly, one of the problems of one aspect of the present invention is to provide a highly reliable structure in which high-speed response and high-speed driving of a semiconductor device are realized by improving the conduction characteristics of the transistor.

One aspect of the present invention is a semiconductor device in which an oxide semiconductor layer, a source electrode layer or a gate electrode layer, and a gate insulating layer composed of a laminate of a first conductive layer and a second conductive layer are sequentially laminated In the transistor of the gate electrode layer, the gate electrode layer overlaps the first conductive layer via the gate insulating layer and does not overlap the second conductive layer via the gate insulating layer.

One aspect of the present invention is a semiconductor device comprising: an oxide semiconductor layer disposed on a substrate having an insulating surface; a first conductive layer partially disposed on the oxide semiconductor layer; partially disposed on the first conductive layer a second conductive layer; a gate insulating layer disposed on the oxide semiconductor layer, on the first conductive layer, and on the second conductive layer; and a gate electrode layer disposed on the oxide semiconductor layer via the gate insulating layer The gate electrode layer overlaps the first conductive layer via the gate insulating layer and does not overlap the second conductive layer via the gate insulating layer.

One aspect of the present invention is a semiconductor device including: disposed at An oxide semiconductor layer on the substrate having an insulating surface; a first conductive layer partially disposed on the oxide semiconductor layer; a second conductive layer partially disposed on the first conductive layer; and disposed on the second conductive layer An insulating layer; a gate insulating layer disposed on the oxide semiconductor layer, on the first conductive layer, on the second conductive layer, and on the insulating layer; and a gate electrode disposed on the oxide semiconductor layer via the gate insulating layer The layer, wherein the gate electrode layer overlaps the first conductive layer via the gate insulating layer and does not overlap the second conductive layer via the gate insulating layer.

One aspect of the present invention is a semiconductor device comprising: an oxide semiconductor layer disposed on a substrate having an insulating surface; a first conductive layer partially disposed on the oxide semiconductor layer; partially disposed on the first conductive layer An insulating layer partially disposed on the insulating layer and disposed in contact with the first conductive layer in the opening portion of the insulating layer; disposed on the oxide semiconductor layer, on the first conductive layer, and second conductive a gate insulating layer on the layer and on the insulating layer; and a gate electrode layer disposed on the oxide semiconductor layer via the gate insulating layer, wherein the gate electrode layer overlaps the first conductive layer via the gate insulating layer And does not overlap with the second conductive layer via the gate insulating layer.

One aspect of the present invention is a semiconductor device comprising: an oxide semiconductor layer provided on an insulating layer partially having a buried conductive layer on a substrate having an insulating surface; a first portion partially disposed on the oxide semiconductor layer a conductive layer; a second conductive layer partially disposed on the first conductive layer; a gate insulating layer disposed on the oxide semiconductor layer, on the first conductive layer, and on the second conductive layer; and a gate insulating layer Set in oxide semiconducting a gate electrode layer on the bulk layer, wherein the gate electrode layer overlaps the first conductive layer via the gate insulating layer and does not overlap the second conductive layer via the gate insulating layer.

In one aspect of the invention, it is preferable to employ a semiconductor device in which an insulating layer partially having a buried conductive layer is provided with a buried conductive layer in contact with the first conductive layer in an opening portion of the oxide semiconductor layer.

In one mode of the present invention, it is preferable to employ a semiconductor device in which an insulating layer partially having a buried conductive layer has a buried oxide semiconductor layer on the buried conductive layer.

In one embodiment of the present invention, it is preferable to use a semiconductor device in which an insulating layer partially having a buried conductive layer and a buried oxide semiconductor layer is provided in contact with the first conductive layer in an opening portion of the oxide semiconductor layer. The buried oxide semiconductor layer.

In one embodiment of the invention, it is preferable to employ a semiconductor device in which the thickness of the first conductive layer is 5 nm or more and 20 nm or less.

In one embodiment of the invention, it is preferable to employ a semiconductor device in which the thickness of the gate insulating layer is 10 nm or more and 20 nm or less.

In one embodiment of the invention, it is preferable to employ a semiconductor device in which the thickness of the oxide semiconductor layer is 5 nm or more and 20 nm or less.

In one embodiment of the invention, it is preferred to employ a semiconductor device in which a buffer layer is provided on a substrate having an insulating surface.

In one embodiment of the invention, it is preferred to employ a semiconductor device in which the buffer layer is a layer comprising an oxide of one or more elements selected from the group consisting of aluminum, gallium, zirconium, hafnium or rare earth elements.

In one embodiment of the invention, it is preferred to employ a semiconductor device in which the oxide semiconductor layer comprises c-axis aligned crystals.

In order to realize a semiconductor device of higher performance, one aspect of the present invention can provide a highly reliable structure in which a semiconductor device is realized by improving on-state characteristics (for example, on-current and field-effect mobility) of a transistor. High speed response and high speed drive.

Embodiments of the present invention will be described below with reference to the drawings. However, the structure of the present invention can be implemented in a number of different forms, and one of ordinary skill in the art can readily understand the fact that the manner and details may be devised without departing from the spirit and scope of the invention. Transform into a variety of forms. Therefore, the present invention should not be construed as being limited to the contents described in the embodiments.

In addition, for the sake of clarity, the dimensions, thicknesses, or regions of the respective structures shown in the drawings and the like of the respective embodiments may be exaggerated. Therefore, it is not necessarily limited to its scale.

In addition, the first, second, third to Nth (N is a natural number) ordinal numbers used in the present specification are attached to avoid confusion of structural elements, and are not intended to limit the number.

[Embodiment 1]

In the present embodiment, a semiconductor device and a semiconductor device according to one aspect of the disclosed invention will be described with reference to FIGS. 1 to 4 . law.

1 is a cross-sectional view of a transistor 420 which is an example of a structure of a semiconductor device. In addition, the transistor 420 shows a single gate structure in which one channel formation region is formed, but a double gate structure in which two channel formation regions are formed or a triple gate structure in which three channel formation regions are formed may also be employed.

The transistor 420 includes a buffer layer 436, an oxide semiconductor layer 403, first conductive layers 405a, 405b, second conductive layers 465a, 465b, an insulating layer 407, a gate insulating layer 402, and a gate on the substrate 400 having an insulating surface. The electrode layer 401 and the interlayer insulating layer 408 (see FIG. 1).

In the structure of FIG. 1 disclosed in the present embodiment, the first conductive layers 405a and 405b serving as the source electrode and the drain electrode of the transistor 420 are interposed between the gates in a region overlapping the oxide semiconductor layer 403. The insulating layer 402 is overlaid on the gate electrode layer 401. Further, in the structure of FIG. 1 disclosed in the present embodiment, the second conductive layers 465a, 465b serving as the source electrode and the drain electrode of the transistor 420 are not separated in the region overlapping the oxide semiconductor layer 403. The gate insulating layer 402 is overlaid on the gate electrode layer 401.

In the structure of FIG. 1 disclosed in the present embodiment, an end portion of the first conductive layers 405a and 405b serving as a source electrode and a drain electrode of the transistor 420 and a gate electrode layer serving as a gate electrode may be overlapped and disposed. The end of 401. Therefore, the conduction characteristics (for example, on-current and field-effect mobility) of the transistor can be improved to achieve high-speed response and high-speed driving of the semiconductor device.

Further, in the configuration of FIG. 1 disclosed in the present embodiment, the first conductive layers 405a and 405b serving as the source electrode and the drain electrode of the transistor can be thinned. In particular, by making the first conductive layer 405a, 405b thin film The surface step generated when the gate insulating layer 402 is formed in the vicinity of the channel formation region of the oxide semiconductor layer 403 can be reduced. Therefore, the gate insulating layer 402 can be formed by improving the coverage. By reducing the coverage failure, the short circuit between the electrodes is suppressed and the reliability is improved. Furthermore, in the structure of FIG. 1 disclosed in the present embodiment, the end portions of the second conductive layers 465a and 465b serving as the source and drain electrodes of the transistor and the gate serving as the gate electrode may not be overlapped. The end of the electrode layer 401. Therefore, even if the second conductive layers 465a, 465b are formed thicker than the first conductive layers 405a, 405b, a short circuit between the electrodes is not generated. Thus, by thickening the second conductive layers 465a and 465b, it is possible to increase the current flowing through the source electrode and the drain electrode without causing a short circuit between the electrodes.

Further, in the configuration of FIG. 1 shown in the present embodiment, by thinning the first conductive layers 405a and 405b, the time required for processing the first conductive layers 405a and 405b can be shortened by etching or the like. Therefore, damage to the oxide semiconductor layer 403 which is generated when the first conductive layers 405a, 405b are processed by etching or the like can be reduced. Therefore, the reliability can be improved.

Further, the structure of FIG. 1 shown in the present embodiment can employ a coplanar structure in which the gate insulating layer 402 is thinned, and the thinned oxide semiconductor layer 403 can be formed on the buffer layer 436 having improved flatness. By thinning the gate insulating layer 402 and the oxide semiconductor layer 403, it is possible to improve the on-characteristics and to operate the transistor as a depletion type. By operating the transistor as a depletion type, it is possible to achieve high collectivization, high-speed driving, and low power consumption.

Further, in the structure of FIG. 1 disclosed in the present embodiment, the second conductive layers 465a and 465b and the insulating layer 407 are overlapped, and the side surface is processed into a tapered shape by processing such as etching. Therefore, even if the second conductive layers 465a, 465b are thickened, the coverage can be improved.

As described above, in the configuration of FIG. 1 disclosed in the present embodiment, the source electrode and the gate electrode and the gate of the transistor are overlapped without reducing the current flowing through the source electrode and the drain electrode of the transistor. The electrode is used to improve the conduction characteristics. Further, in the configuration of FIG. 1 disclosed in the present embodiment, the oxide semiconductor layer and the gate insulating layer can be thinned by reducing the coverage failure of the gate insulating layer. In this case, it is preferable to miniaturize the transistor in which the oxide semiconductor is used as the channel formation region.

2A to 2E show an example of a method of manufacturing the transistor 420 shown in Fig. 1.

First, a buffer layer 436 is formed on a substrate 400 having an insulating surface. The buffer layer 436 is a layer for suppressing a reaction generated between the oxide semiconductor layer 403 formed on the buffer layer 436 and the substrate 400 having an insulating surface.

There is no major limitation on the substrate that can be used for the substrate 400 having an insulating surface, but the substrate needs to have at least a heat resistance capable of withstanding the heat treatment performed later. For example, a glass substrate such as bismuth borate glass or aluminoborosilicate glass, a ceramic substrate, a quartz substrate, a sapphire substrate or the like can be used. Further, a single crystal semiconductor substrate such as tantalum or tantalum carbide, a polycrystalline semiconductor substrate, a compound semiconductor substrate such as tantalum, an SOI substrate, or the like may be applied, and a substrate on which semiconductor elements are provided may be used. Used as the substrate 400.

Since the buffer layer 436 is a layer in contact with the oxide semiconductor layer 403, it is preferable to use an oxide composed of the same component as the oxide semiconductor layer 403. Specifically, it is preferable to use a constituent element containing an oxide semiconductor layer 403 selected from aluminum (Al), gallium (Ga), zirconium (Zr), or hafnium (Hf) or the same group element as aluminum or gallium. A layer of an oxide of one or more elements of the rare earth element. Further, it is more preferable to use an oxide of aluminum, gallium or a rare earth element of a group III element among these elements. Further, as the rare earth element, it is preferable to use cerium (Sc), yttrium (Y), cerium (Ce), cerium (Sm) or ytterbium (Gd). These materials have good matching with the oxide semiconductor layer 403, and thus, by using them for the buffer layer 436, a good state of the interface with the oxide semiconductor layer 403 can be obtained. In addition, the crystallinity of the oxide semiconductor layer 403 can be improved.

In addition, since the oxide semiconductor layer 403 is used as the active layer of the transistor 420, the energy gap of the buffer layer 436 needs to be larger than that of the oxide semiconductor layer 403, and the buffer layer 436 is preferably insulating.

Buffer layer 436 can also be a single layer or a laminate.

The method for producing the buffer layer 436 is not particularly limited, and may be formed using a plasma CVD method, a sputtering method, or the like.

The surface of the buffer layer 436 may also be planarized. The planarization treatment is not particularly limited, and a polishing treatment (for example, a chemical mechanical polishing (CMP) method), a dry etching treatment, a plasma treatment, or the like can be used.

Next, an oxide semiconductor layer 403 is formed on the buffer layer 436.

When the oxide semiconductor layer 403 is formed, it is preferable to reduce the concentration of hydrogen contained in the oxide semiconductor layer 403 as much as possible. In order to reduce the hydrogen concentration, for example, when film formation is performed by a sputtering method, an atmosphere gas supplied to a processing chamber of a sputtering apparatus is suitably used: a high purity impurity such as hydrogen, water, a hydroxyl group or a hydride is removed. A rare gas (typically argon); oxygen; a mixture of a rare gas and oxygen.

Further, it is preferable that the oxide semiconductor layer 403 and the buffer layer 436 are continuously formed so as not to be exposed to the atmosphere. By continuously forming the oxide semiconductor layer 403 and the buffer layer 436 without being exposed to the atmosphere, it is possible to prevent impurities such as hydrogen or moisture from adhering to the interface between the oxide semiconductor layer 403 and the buffer layer 436.

In addition, by forming the oxide semiconductor layer 403 in a state where the substrate 400 is kept at a high temperature, it is effective to reduce the concentration of impurities which may be contained in the oxide semiconductor layer 403. The temperature of the heating substrate 400 can be set to 150 ° C or more and 450 ° C or less, and is preferably set to 200 ° C or more and 350 ° C or less. Further, by heating the substrate 400 at a high temperature when the oxide semiconductor layer 403 is formed, an oxide semiconductor layer having crystallinity can be formed.

The oxide semiconductor used for the oxide semiconductor layer 403 preferably contains at least indium (In) or zinc (Zn). In particular, it is preferred to contain In and Zn. Further, as the uneven stabilizer for reducing the electrical characteristics of the transistor using the oxide semiconductor, it is preferable to further contain gallium (Ga) in addition to the above elements. Further, it is preferable to contain tin (Sn) as a stabilizer. Further, as the stabilizer, it is preferred to contain hydrazine (Hf). In addition, As the stabilizer, aluminum (Al) is preferably contained. Further, it is preferable to have zirconium (Zr) as a stabilizer.

Further, as other stabilizers, lanthanum (La), cerium (Ce), strontium (Pr), strontium (Nd), strontium (Sm), europium (Eu), strontium (Gd), strontium may be contained. One or more of (Tb), Dy, Ho, Er, Tm, Yb, and Lu.

For example, as the oxide semiconductor, indium oxide; tin oxide; zinc oxide; a binary metal oxide such as an In-Zn-based oxide, a Sn-Zn-based oxide, an Al-Zn-based oxide, or a Zn-Mg-based oxide can be used. , Sn-Mg-based oxides, In-Mg-based oxides, In-Ga-based oxides; ternary metal oxides such as In-Ga-Zn-based oxides (also known as IGZO), In-Al-Zn-based oxidation , In-Sn-Zn-based oxide, Sn-Ga-Zn-based oxide, Al-Ga-Zn-based oxide, Sn-Al-Zn-based oxide, In-Hf-Zn-based oxide, In-La -Zn-based oxide, In-Ce-Zn-based oxide, In-Pr-Zn-based oxide, In-Nd-Zn-based oxide, In-Sm-Zn-based oxide, In-Eu-Zn-based oxide , In-Gd-Zn-based oxide, In-Tb-Zn-based oxide, In-Dy-Zn-based oxide, In-Ho-Zn-based oxide, In-Er-Zn-based oxide, In-Tm- Zn-based oxide, In-Yb-Zn-based oxide, In-Lu-Zn-based oxide; and quaternary metal oxide such as In-Sn-Ga-Zn-based oxide, In-Hf-Ga-Zn-based oxidation A material, an In-Al-Ga-Zn-based oxide, an In-Sn-Al-Zn-based oxide, an In-Sn-Hf-Zn-based oxide, or an In-Hf-Al-Zn-based oxide.

Further, here, for example, an In-Ga-Zn-based oxide means having In, The oxides of Ga and Zn have no limitation on the ratio of In, Ga, and Zn. Further, a metal element other than In, Ga, or Zn may be contained.

Further, it is preferable to form the oxide semiconductor layer 403 and to form a large amount of oxygen in the oxide semiconductor layer 403 under the condition that a large amount of oxygen is formed at the time of formation (for example, by sputtering in an atmosphere of 100% oxygen). (It is preferable to include a region in which the stoichiometric composition in the crystalline state of the oxide semiconductor is excessively larger than the oxygen content).

Further, as the sputtering gas used in forming the oxide semiconductor layer 403, a high-purity gas from which impurities such as hydrogen, water, a hydroxyl group or a hydride are removed is preferably used.

In addition, by further reducing impurities such as moisture or hydrogen which are electron donors (donors) and reducing oxygen defects, a highly purified oxide semiconductor (i-type semiconductor) is infinitely close to Type i. Therefore, the transistor using the above oxide semiconductor has a characteristic that the off current is remarkably low. Further, the energy gap of the oxide semiconductor is 2 eV or more, preferably 2.5 eV or more, and more preferably 3 eV or more. The off current of the transistor can be lowered by using an oxide semiconductor layer which is sufficiently purified to reduce the concentration of impurities such as moisture or hydrogen and which is highly degraded by oxygen deficiency.

In addition, in the case of an n-channel type transistor, the off current described in the present specification means a state in which the potential of the 汲 terminal is higher than the potential of the source terminal and the gate, unless otherwise specified. When the potential of the gate when the potential of the source terminal is 0 or less, the current flows between the source terminal and the gate terminal.

Note that the oxide semiconductor may be in a state of single crystal, polycrystal or amorphous. In particular, the oxide semiconductor used as the oxide semiconductor layer 403 is preferably a mixed layer including a crystalline region and an amorphous region and has crystallinity.

The oxide semiconductor having crystallinity can further reduce defects in the bulk, and by increasing the flatness of the surface, higher mobility can be obtained. In order to improve the flatness of the surface, an oxide semiconductor is formed on the surface having an average surface roughness (Ra) of preferably 1 nm or less, more preferably 0.3 nm or less, and further preferably 0.1 nm or less.

Note that Ra expands the arithmetic mean roughness defined in JIS B0601:2001 (ISO4287:1997) to three dimensions so that it can be applied to a surface, and can average the absolute value of the deviation from the reference plane to the specified plane. The value of "is expressed by the following formula.

Here, the designated face refers to the face that becomes the object of measuring roughness, and is a coordinate (x 1 , y 1 , f(x 1 , y 1 )) (x 1 , y 2 , f(x 1 , y 2 )) a region of a quadrangle represented by four points of (x 2 , y 1 , f(x 2 , y 1 )) (x 2 , y 2 , f(x 2 , y 2 )), a rectangle of a specified plane projected on the xy plane The area is S 0 , and the height of the reference plane (the average height of the designated surface) is Z 0 . Ra can be evaluated using an atomic force microscope (AFM: Atomic Force Microscope).

Preferably, the crystalline oxide semiconductor is preferably CAAC-OS (C Axis Aligned Crystalline Oxide Semiconductor).

CAAC-OS is neither a complete single crystal nor completely amorphous. CAAC-OS is an oxide semiconductor having a crystal-amorphous mixed phase structure of a crystal portion and an amorphous portion of several nm to several tens of nm in an amorphous phase. Further, in the image observed by a transmission electron microscope (TEM: Transmission Electron Microscope), the boundary between the amorphous portion and the crystal portion included in the CAAC-OS is not clear. Also, no grain boundaries (also referred to as grain boundaries) were observed in CAAC-OS. Since CAAC-OS has no grain boundaries, it is not easy to cause a decrease in electron mobility due to grain boundaries.

The c-axis of the crystal portion included in the CAAC-OS is uniform in the direction perpendicular to the normal vector of the formed face or surface of the CAAC-OS, and has a triangular or hexagonal atom when viewed from a direction perpendicular to the ab plane. Arranged, and when viewed from a direction perpendicular to the c-axis, the metal atoms are arranged in a layer or the metal atoms and oxygen atoms are arranged in a layer. Further, the directions of the a-axis and the b-axis may be different from each other between different crystal portions.

Note that the proportion of the amorphous portion and the crystalline portion in CAAC-OS may also be uneven. For example, when crystal growth is carried out from the surface side of the CAAC-OS, the proportion of the crystal portion in the vicinity of the surface of the CAAC-OS may increase and the proportion of the amorphous portion in the vicinity of the formation surface may increase.

Since the c-axis of the crystal portion included in the CAAC-OS is uniform in the direction perpendicular to the normal vector of the formed face or surface of the CAAC-OS, Therefore, depending on the shape of the CAAC-OS (the cross-sectional shape of the surface to be formed or the cross-sectional shape of the surface), the directions of the c-axis of the crystal portion may be different from each other. Further, the c-axis direction of the crystal portion is a direction perpendicular to the normal vector of the surface or surface to be formed when the CAAC-OS is formed. The crystal portion is formed by a crystallization treatment such as film formation or heat treatment after film formation.

Since the fluctuation of the electrical characteristics of the transistor due to the irradiation of visible light or ultraviolet light is reduced by using CAAC-OS, a highly reliable transistor can be obtained.

An example of the oxide semiconductor layer 403 is an In-Ga-Zn-based oxide formed by a sputtering method using a target containing In (indium), Ga (gallium), and Zn (zinc). The oxide semiconductor layer 403 can be formed to have a thickness of 1 nm or more and 30 nm or less (preferably, a thickness of 5 nm or more and 20 nm or less).

Note that when film formation of CAAC-OS is performed, for example, a polycrystalline oxide semiconductor sputtering target is used and formed by a sputtering method. When ions collide with the sputtering target, the crystal region included in the sputtering target may be cleaved from the a-b surface, that is, the flat or granular sputtered particles having a surface parallel to the a-b surface are peeled off. At this time, CAAC-OS can be formed by allowing the flat sputtered particles to reach the substrate while maintaining the crystal state.

In the case of forming an In—Ga—Zn-based oxide by a sputtering method, it is preferred to use an atomic ratio of In:Ga:Zn=1:1:1, 4:2:3, 3:1:2. , 1:1:2, 2:1:3 or 3:1:4 target of In-Ga-Zn-based oxide. By forming an oxide semiconductor layer using a target having an In-Ga-Zn-based oxide having the above atomic ratio, it is easy to form polycrystal or CAAC-OS. Further, the filling ratio of the target containing In, Ga, and Zn is 90% or more and 100% or less, preferably 95% or more and less than 100%. A dense oxide semiconductor layer can be formed by using a target having a high filling ratio.

Then, by placing the substrate in a processing chamber maintained in a reduced pressure state, residual moisture in the processing chamber is removed, and a sputtering gas from which hydrogen and moisture are removed is introduced, and an oxide semiconductor layer is formed using the target. At the time of formation, the substrate temperature may be set to 100 ° C or more and 600 ° C or less, preferably 200 ° C or more and 400 ° C or less. By forming the oxide semiconductor layer while heating the substrate, the concentration of impurities contained in the formed oxide semiconductor layer can be lowered. In addition, damage due to sputtering can be alleviated. In order to remove moisture remaining in the processing chamber, it is preferred to use an adsorption type vacuum pump. For example, a cryopump, an ion pump, or a titanium sublimation pump is preferably used. Further, as the exhaust unit, a turbo pump equipped with a cold trap may be used. When the forming chamber is evacuated using a cryopump, for example, a compound containing a hydrogen atom such as hydrogen atom or water (H 2 O) (more preferably, a compound including a carbon atom) is discharged, whereby the ratio can be lowered. The concentration of impurities contained in the oxide semiconductor layer formed in the processing chamber.

In addition, a large amount of moisture or hydrogen (including a hydroxyl group) as an impurity may be contained in the oxide semiconductor layer formed by a sputtering method or the like. Therefore, in order to reduce moisture (hydrogenation or dehydrogenation) such as moisture or hydrogen in the oxide semiconductor layer, it is preferably under an atmosphere of a reduced pressure, an inert gas atmosphere such as nitrogen or a rare gas, an oxygen atmosphere or an ultra-dry air ( Using CRDS (cavity ring-down laser spectroscopy) The moisture content at the time of measurement by the dew point meter is 20 ppm (the dew point is -55 ° C) or less, preferably 1 ppm or less, more preferably 10 ppb or less of air, and the oxide semiconductor layer is heat-treated.

By heat-treating the oxide semiconductor layer, moisture or hydrogen in the oxide semiconductor layer can be removed. Specifically, the heat treatment may be performed at a temperature of 250 ° C or more and 750 ° C or less, preferably 400 ° C or more and lower than the strain point of the substrate. For example, heat treatment at 500 ° C for 3 minutes or more and 6 minutes or less may be performed. By using the RTA method as the heat treatment, dehydration or dehydrogenation can be carried out in a short time, whereby the treatment can be carried out at a temperature exceeding the strain point of the glass substrate.

Note that as long as the oxide semiconductor layer 403 is formed and before the interlayer insulating layer 408 formed later is formed, any timing in the process of the transistor 420 may be performed to desorb moisture or hydrogen in the oxide semiconductor layer. Heat treatment. Further, the heat treatment for dehydration or dehydrogenation may be carried out a plurality of times or as another heat treatment.

Further, due to the above heat treatment, oxygen is desorbed from the oxide semiconductor layer to form an oxygen defect in the oxide semiconductor layer. Therefore, in the subsequent process, it is preferable to use a gate insulating layer containing oxygen as the gate insulating layer contacting the oxide semiconductor layer. Further, oxygen is supplied from the gate insulating layer to the oxide semiconductor layer by performing a heat treatment after forming a gate insulating layer containing oxygen. By adopting the above structure, it is possible to reduce the oxygen defect which becomes the donor, and to satisfy the stoichiometric composition ratio of the oxide semiconductor included in the oxide semiconductor layer. As a result, the oxide semiconductor layer can be made closer to the i-type, and the electrical characteristics of the transistor due to oxygen defects can be alleviated. Poor, thereby achieving an improvement in electrical characteristics.

In an atmosphere of nitrogen, ultra-dry air or a rare gas (argon, helium, etc.), it is preferably 200 ° C or more and 400 ° C or less, for example, 250 ° C or more and 350 ° C or less for supplying oxygen to the oxide semiconductor layer. Heat treatment. The water content of the gas is preferably 20 ppm or less, more preferably 1 ppm or less, still more preferably 10 ppb or less.

Further, oxygen may be introduced into the oxide semiconductor layer subjected to the dehydration treatment or the dehydrogenation treatment (including at least one of oxygen radicals, oxygen atoms, and oxygen ions) to supply oxygen into the layer.

The oxide semiconductor layer 403 can be highly purified and i-formed by introducing oxygen into the oxide semiconductor layer 403 subjected to dehydration treatment or dehydrogenation treatment to supply oxygen into the layer. The variation in electrical characteristics of the transistor having the highly purified and i-type oxide semiconductor layer 403 is suppressed, so the transistor is electrically stable.

As the method of introducing oxygen, an ion implantation method, an ion doping method, a plasma immersion ion implantation method, a plasma treatment, or the like can be used.

The oxide semiconductor layer 403 can be formed by processing a layered oxide semiconductor layer into an island-shaped oxide semiconductor layer 403 by a photolithography process.

Note that the etching of the oxide semiconductor layer 403 may be dry etching, wet etching, or both dry etching and wet etching. For example, as an etchant for wet etching of the oxide semiconductor layer 403, a solution in which phosphoric acid, acetic acid, and nitric acid are mixed may be used. In addition, ITO07N (manufactured by Kanto Chemical Co., Ltd.) can also be used.

In addition, in FIG. 2A, the end of the oxide semiconductor layer 403 on the island The portion has a taper of 20° to 50°. Although oxygen is easily detached when the end portion is perpendicular to generate oxygen defects, oxygen defects can be suppressed by having a taper at the end portion. By suppressing this oxygen deficiency, the generation of leakage current (parasitic passage) of the transistor 420 can be reduced.

Next, a first conductive layer 405 serving as a source electrode layer and a drain electrode layer (including wirings formed of the same layers) is formed on the oxide semiconductor layer 403 and the buffer layer 436.

As the first conductive layer 405, a material capable of withstanding the subsequent heat treatment is used. As the first conductive layer 405 serving as the source electrode layer and the gate electrode layer, for example, a metal film containing an element selected from the group consisting of Al, Cr, Cu, Ta, Ti, Mo, and W may be used or may be composed of the above elements. A metal nitride film (titanium nitride film, molybdenum nitride film, tungsten nitride film) or the like.

Further, when a metal film of Al, Cu or the like is used as the first conductive layer 405, it is preferable to laminate a high melting point metal film of Ti, Mo, W or the like on one or both of the lower side or the upper side of the metal film or The structure of the metal nitride film (titanium nitride film, molybdenum nitride film, tungsten nitride film) of these layers is laminated.

Further, the first conductive layer 405 serving as the source electrode layer and the gate electrode layer may be formed of a conductive metal oxide. As the conductive metal oxide, indium oxide (In 2 O 3 ), tin oxide (SnO 2 ), zinc oxide (ZnO), indium tin oxide (In 2 O 3 -SnO 2 , abbreviated as ITO), or indium oxide can be used. Zinc oxide (In 2 O 3 -ZnO) or a material in which their metal oxide material contains cerium oxide.

Preferably, the first conductive layer 405 is formed thinner than the second conductive layer 465 formed later. Specifically, it is preferable to form a gate formed later. The electrode insulating layer 402 may be formed to have a thickness of not less than the coverage failure, and may be formed to have a thickness of 1 nm or more and 30 nm or less (preferably 10 nm or more and 20 nm or less).

Next, a second conductive layer 465 serving as a source electrode layer and a gate electrode layer (including wirings formed of the same layers) is formed on the first conductive layer 405.

As the second conductive layer 465, a material capable of withstanding the subsequent heat treatment is used. As the second conductive layer 465 serving as the source electrode layer and the gate electrode layer, for example, a metal film containing an element selected from the group consisting of Al, Cr, Cu, Ta, Ti, Mo, and W may be used or may be composed of the above elements. A metal nitride film (titanium nitride film, molybdenum nitride film, tungsten nitride film) or the like.

Further, a high melting point metal film of Ti, Mo, W or the like or a metal nitride film (titanium nitride film, nitrogen) laminated thereon may be laminated on one or both of the lower side or the upper side of the metal film of Al or Cu. The structure of the molybdenum film and the tungsten nitride film).

Further, the second conductive layer 465 serving as the source electrode layer and the gate electrode layer may be formed of a conductive metal oxide. As the conductive metal oxide, indium oxide (In 2 O 3 ), tin oxide (SnO 2 ), zinc oxide (ZnO), indium tin oxide (In 2 O 3 -SnO 2 , abbreviated as ITO), or indium oxide can be used. Zinc oxide (In 2 O 3 -ZnO) or a material in which their metal oxide material contains cerium oxide.

Further, when a single layer of a metal film of Al, Cu or the like is used as the second conductive layer 465, in particular, as the first conductive layer 405, a high melting point metal film of Ti, Mo, W or the like or a metal nitrogen thereof is preferably used. Chemical film (titanium nitride) Film, molybdenum nitride film, tungsten nitride film). By adopting this structure, Al and Cu can be used as the second conductive layer 465 to reduce the wiring resistance and to reduce the oxidation of Al and Cu due to the direct contact of the oxide semiconductor layer with Al and Cu, and thus the resistance. Increase and so on. Further, when etching is performed in a subsequent process (process in FIG. 2B), as the second conductive layer 465, a material whose selection ratio is higher than that of the first conductive layer 405 is preferably selected.

Preferably, the second conductive layer 465 is formed thicker than the first conductive layer 465. Specifically, the second conductive layer 465 can be formed to the extent that the wiring resistance is not increased when used as the source electrode and the drain electrode, and there is no particular limitation on the thickness.

Next, an insulating layer 407 is formed on the second conductive layer 465. In addition, although the insulating layer 407 is not an essential component, it serves as a mask for processing the first conductive layer 405 and the second conductive layer 465 in the subsequent process or for protecting the top of the source electrode or the drain electrode. The protective layer of the face is effective.

The insulating layer 407 can be formed by a CVD method, a sputtering method, or the like. Further, the insulating layer 407 is preferably formed to include cerium oxide, cerium nitride, cerium oxynitride, cerium oxynitride, aluminum oxide, cerium oxide, cerium oxide or the like. In addition, the gate insulating layer 407 may have a single layer structure or a stacked structure. Further, the thickness of the insulating layer 407 is not particularly limited.

The above is the description of the process up to FIG. 2A.

Next, a photoresist mask is formed on the insulating layer 407 by a photolithography process, and the second conductive layer 465 and the insulating layer 407 are partially etched to form second conductive layers 465a and 465b, and then the photoresist mask is removed. By the etching process, the second conductive layer 465 and the insulating layer 407 are in the oxide semiconductor Layer 403 is separated. The separated second conductive layers 465a, 465b function as a source electrode layer and a gate electrode layer of the transistor 420.

The above is the description of the process up to FIG. 2B.

Next, a photoresist mask is formed on the first conductive layer 405 by a photolithography process to form first conductive layers 405a, 405b, and then the photoresist mask is removed. The first conductive layer 405 is separated on the oxide semiconductor layer 403 by this etching treatment. The separated first conductive layers 405a, 405b function as a source electrode layer and a gate electrode layer of the transistor 420.

In addition, by forming the first conductive layer 405 thinner than the second conductive layer 465, the thickness of the first conductive layer 405 formed on the oxide semiconductor layer 403 can be made uniform. Further, by forming the first conductive layer 405 thin, the period required for processing the first conductive layer 405 by the above etching process can be shortened. Therefore, damage to the oxide semiconductor layer 403 at the time of processing the first conductive layer 405 can be reduced. This makes it possible to improve the reliability.

The above is the description of the process up to FIG. 2C.

Next, a gate insulating layer 402 covering the oxide semiconductor layer 403, the first conductive layers 405a and 405b, the second conductive layers 465a and 465b, and the insulating layer 407 is formed.

The thickness of the gate insulating layer 402 is set to 1 nm or more and 20 nm or less, preferably 10 nm or more and 20 nm or less, and a sputtering method, an MBE method, a CVD method, a pulsed laser deposition method, or an ALD method can be suitably used. Formed. In addition, the gate insulating layer 402 can also be used in a state in which a plurality of substrate surfaces are disposed substantially perpendicular to the surface of the sputtering target. A sputtering apparatus for film formation is formed.

As a material of the gate insulating layer 402, a hafnium oxide film, a gallium oxide film, an aluminum oxide film, a tantalum nitride film, a hafnium oxynitride film, an aluminum oxynitride film, or a hafnium oxynitride film can be used.

The gate insulating layer 402 preferably contains oxygen in a portion contacting the oxide semiconductor layer 403. In particular, the gate insulating layer 402 preferably has at least an amount of oxygen in its layer (in the block) that exceeds the stoichiometric composition ratio. For example, when yttrium oxide is used for the gate insulating layer 402, SiO 2+α is used (note that α>0).

In the present embodiment, yttrium oxide of SiO 2+α (note that α>0) is used for the gate insulating layer 402. By using such ruthenium oxide for the gate insulating layer 402, oxygen can be supplied to the oxide semiconductor layer 403, so that characteristics can be improved.

Further, by using as the material of the gate insulating layer 402, yttrium oxide, ytterbium oxide, yttrium ruthenate (HfSi x O y (x>0, y>0)), and niobium strontium sulphate (HfSiO x N y ) added with nitrogen are used. (x>0, y>0)), high-k materials such as hafnium aluminate (HfAl x O y (x>0, y>0)) and yttrium oxide can reduce the gate leakage current. Furthermore, the gate insulating layer 402 may have a single layer structure or a stacked structure.

Further, the gate electrode layer 401 is formed on the gate insulating layer 402 by a plasma CVD method, a sputtering method, or the like.

The gate electrode layer 401 can be formed using a metal material such as molybdenum, titanium, tantalum, tungsten, aluminum, copper, chromium, niobium, tantalum or the like or an alloy material containing these materials as a main component. Further, as the gate electrode layer 401, a semiconductor film typified by a polycrystalline germanium film doped with an impurity element such as phosphorus, or nickel can be used. A telluride film such as a telluride. The gate electrode layer 401 may have a single layer structure or a stacked structure.

In addition, the material of the gate electrode layer 401 may also be applied with indium tin oxide, indium oxide containing tungsten oxide, indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, indium tin oxide containing titanium oxide. A conductive material such as indium zinc oxide or indium tin oxide added with cerium oxide. Further, a laminated structure of the above conductive material and the above metal material may also be employed.

Further, as one of the gate electrode layers 401 in contact with the gate insulating layer 402, a metal oxide containing nitrogen, specifically, an In-Ga-Zn-O film containing nitrogen, and In-containing nitrogen may be used. Sn-O film, In-Ga-O film containing nitrogen, In-Zn-O film containing nitrogen, Sn-O film containing nitrogen, In-O film containing nitrogen, and metal nitride film (InN, SnN, etc.) ). When these films have a work function of 5 eV (electron volts), preferably 5.5 eV (electron volts) or more and use them as a gate electrode layer, the threshold voltage of the electrical characteristics of the transistor can be made positive, and A so-called normally off switching element can be realized.

The above is the description of the process up to FIG. 2D.

Next, an interlayer insulating layer 408 is formed over the gate insulating layer 402 and the gate electrode layer 401 (see FIG. 2E).

The interlayer insulating layer 408 can be formed using a plasma CVD method, a sputtering method, a vapor deposition method, or the like. As the interlayer insulating layer 408, an inorganic insulating layer of cerium oxide, cerium oxynitride, aluminum oxynitride or gallium oxide or the like can be typically used.

Further, as the interlayer insulating layer 408, alumina or oxygen can also be used. Plutonium, magnesium oxide, zirconium oxide, hafnium oxide, tantalum oxide or metal nitride (for example, an aluminum nitride film).

The interlayer insulating layer 408 may be a single layer or a laminate, and for example, a laminate of a hafnium oxide film and an aluminum oxide film may be used.

As the interlayer insulating layer 408, it is preferable to form a method in which impurities such as water or hydrogen are not mixed into the interlayer insulating layer 408 by a sputtering method or the like as appropriate. Further, when the interlayer insulating layer 408 is a film containing excess oxygen, it is a supply source for supplying oxygen to the oxide semiconductor layer 403 by the gate insulating layer 402 in contact with the oxide semiconductor layer 403, which is preferable. .

In the present embodiment, a ruthenium oxide film having a thickness of 100 nm is formed as an interlayer insulating layer 408 by a sputtering method. The ruthenium oxide film can be formed by a sputtering method in a rare gas (typically argon) atmosphere, an oxygen atmosphere, or a mixed atmosphere of a rare gas and oxygen.

As in the case of forming the oxide semiconductor layer, in order to remove moisture remaining in the deposition chamber of the interlayer insulating layer 408, an adsorption type vacuum pump (such as a cryopump) is preferably used. The concentration of impurities contained in the interlayer insulating layer 408 formed in the deposition chamber using the cryopump exhaust gas can be lowered. Further, as an exhaust device for removing moisture remaining in the deposition chamber of the interlayer insulating layer 408, a turbo molecular pump equipped with a cold trap may also be employed.

As the sputtering gas used when forming the interlayer insulating layer 408, a high-purity gas from which impurities such as hydrogen, water, a hydroxyl group or a hydride are removed is preferably used.

The aluminum oxide film which can be used as the interlayer insulating layer 408 provided on the oxide semiconductor layer 403 has a high blocking effect (blocking effect), that is, does not make The effect of both impurities such as hydrogen and moisture and oxygen passing through the membrane.

Therefore, the aluminum oxide film is used as a protective film which prevents impurities such as hydrogen and moisture from being mixed into the oxide semiconductor layer 403 and preventing release from the oxide semiconductor layer 403 during the process and after the process. Oxygen which is a main component material constituting an oxide semiconductor.

Further, in order to reduce surface unevenness caused by the transistor, a planarization insulating film may be formed. As the planarization insulating film, an organic material such as polyimide, acrylic resin or benzocyclobutene resin can be used. Further, in addition to the above organic materials, a low dielectric constant material (low-k material) or the like can be used. Further, a plurality of insulating films formed of the above materials may be laminated to form a planarizing insulating film.

Note that in the structure of the transistor disclosed in the present embodiment, the distance Lc between the first conductive layer 405a serving as the source electrode and the drain electrode and the first conductive layer 405b is the channel length of the transistor 420. When the length in the channel length direction of the gate electrode layer 401 is represented by Lg in the structure disclosed in the present embodiment, and the channel length of the gate electrode layer 401 is represented by Lc, as shown in FIG. 3A, the lengths of Lg and Lc are the same. Or as shown in FIG. 3B, Lg is longer than Lc. That is, in the transistor disclosed in the present embodiment, the end portions of the first conductive layers 405a and 405b serving as the source electrode and the drain electrode of the transistor and the gate electrode serving as the gate electrode may be overlapped and disposed. The end of layer 401. Therefore, high-speed response and high-speed driving of the semiconductor device can be realized by improving the conduction characteristics (for example, on-current and field-effect mobility) of the transistor.

The transistor 420 of the present embodiment is manufactured by the above process (refer to the figure) 2E). It is possible to realize a transistor in which an oxide semiconductor layer 403 containing at least indium, zinc, and oxygen is provided, and a source electrode of the transistor and a gate electrode and a gate electrode are overlapped and the coverage is improved. Further, it is possible to provide a structure in which the on-state characteristics of the transistor are improved to achieve high-speed response of the semiconductor device and high reliability in high-speed driving.

Here, a modified example of the transistor 420 shown in Fig. 1 will be described with reference to Fig. 4 . In the description of FIG. 4, the repeated description of the portions having the same portions or the same functions as those of FIG. 1 is omitted. Further, a detailed description of the same portions will be omitted.

The structure of the transistor shown in FIG. 4 is different from the structure of the transistor of FIG. 1 in which the first conductive layer and the second conductive layer are directly laminated, that is, a structure in which an insulating layer is provided between the first conductive layer and the second conductive layer.

4 is a cross-sectional view of a transistor 430 of an example different from the structure of the transistor 420 of FIG. 1.

The transistor 430 includes a buffer layer 436, an oxide semiconductor layer 403, first conductive layers 405a, 405b, second conductive layers 465a, 465b, an insulating layer 417, a gate insulating layer 402, and a gate on the substrate 400 having an insulating surface. The electrode layer 401 and the interlayer insulating layer 408 (see FIG. 4).

The structure of FIG. 4 is the first conductive layer 405a, 405b serving as the source electrode and the drain electrode of the transistor 430 via the gate insulating layer 402 in the region overlapping the oxide semiconductor layer 403 as in the structure of FIG. Overlapped on the gate electrode layer 401. Further, the structure of FIG. 4 is the same as the structure of FIG. 1, and the second conductive layers 465a and 465b serving as the source electrode and the drain electrode of the transistor 430 are interposed between the gates in the region overlapping the oxide semiconductor layer 403. The insulating layer 402 does not overlap the gate electrode layer 401.

Therefore, the structure of FIG. 4 can improve the conduction characteristics without reducing the current flowing through the source electrode and the drain electrode of the transistor and superimposing the source electrode of the transistor, the drain electrode, and the gate electrode. Furthermore, in the structure of FIG. 4, the oxide semiconductor layer and the gate insulating layer can be thinned by reducing the coverage failure of the gate insulating layer.

Further, in particular, in the structure of FIG. 4, an insulating layer 417 is disposed between the first conductive layers 405a, 405b and the second conductive layers 465a, 465b and directly contacts the first conductive layers 405a, 405b and the first via the opening 418. Two conductive layers 465a, 465b. By adopting this structure, even when the etching rate of the first conductive layer and the second conductive layer is small when the transistor 430 is manufactured, the first conductive layer and the second conductive layer can be processed into a predetermined shape. Therefore, the first conductive layer and the second conductive layer can also be made of the same material.

As described above, in the configuration disclosed in the present embodiment, the source electrode, the drain electrode, and the gate electrode of the transistor are stacked without reducing the current flowing through the source electrode and the drain electrode of the transistor. The conduction characteristics can be improved. Further, in the configuration disclosed in the present embodiment, the oxide semiconductor layer and the gate insulating layer can be thinned by reducing the coverage failure of the gate insulating layer. In this case, it is preferable to miniaturize the transistor in which the oxide semiconductor is used as the channel formation region.

This embodiment can be implemented in appropriate combination with other embodiments.

[Embodiment 2]

In the present embodiment, a semiconductor device will be described with reference to FIGS. 5A to 6B. Another way. The same portion as the above embodiment or a portion having a function similar to that of the above embodiment can be formed by a method similar to the above embodiment. The same or similar processes as those of the above embodiment can be carried out in a similar manner to the above embodiment. Therefore, the repeated description thereof will be omitted. In addition, the detailed description of the same portions is omitted.

FIG. 5A is a cross-sectional view of a transistor 440 which is an example different from the configuration of the semiconductor device shown in the first embodiment.

The transistor 440 includes an insulating layer 491 provided with buried conductive layers 481a, 481b, an oxide semiconductor layer 403, first conductive layers 405a, 405b, second conductive layers 465a, 465b, and gate electrodes on the substrate 400 having an insulating surface. The insulating layer 402, the gate electrode layer 401, and the interlayer insulating layer 408 (see FIG. 5A).

The structure of FIG. 5A is the same as the structure of FIG. 1 in which a first conductive layer 405a, 405b serving as a source electrode and a drain electrode of the transistor 440 is interposed between the gate insulating layer 402 in a region overlapping the oxide semiconductor layer 403. Overlapped on the gate electrode layer 401. Further, the structure of FIG. 5A is the same as the structure of FIG. 1 in that the second conductive layers 465a, 465b serving as the source electrode and the drain electrode of the transistor 440 are insulated by the gate in the region overlapping the oxide semiconductor layer 403. Layer 402 does not overlap the gate electrode layer 401.

Therefore, the structure of FIG. 5A can improve the conduction characteristics without reducing the current flowing through the source electrode and the drain electrode of the transistor to overlap the source electrode of the transistor, the drain electrode, and the gate electrode. Furthermore, in the structure of FIG. 5A, the oxide semiconductor layer and the gate insulating layer can be thinned by reducing the coverage failure of the gate insulating layer.

Further, in particular, in the structure of FIG. 5A disclosed in the present embodiment, an insulating layer 491 having buried conductive layers 481a and 481b is provided at a lower portion of the transistor 440 via the oxide semiconductor layer 403 and the first conductive layer. The buried conductive layers 481a and 481b are provided to overlap the 405a and 405b and the second conductive layers 465a and 465b. By providing a structure in which the conductive layers 481a and 481b are buried in the lower portion of the transistor 440, the gate insulating layer 402 and the interlayer insulating layer 408 can be connected to the control circuit provided between and outside the transistor without providing openings. Since the contact area of the buried conductive layers 481a, 481b and the transistor 440 can be made large, the contact resistance can be reduced.

Note that the buried conductive layers 481a, 481b can be formed by providing an opening portion after forming the insulating layer 491, embedding the conductive layer in the opening portion, and then polishing the surface by a CMP method.

As the buried conductive layers 481a and 481b, for example, a metal film containing an element selected from the group consisting of Al, Cr, Cu, Ta, Ti, Mo, and W or a metal nitride film containing the above element (titanium nitride film, A molybdenum nitride film or a tungsten nitride film).

Further, when a metal film of Al, Cu or the like is used as the buried conductive layers 481a and 481b, it is preferable to laminate a high melting point of Ti, Mo, W or the like on one or both of the lower side and the upper side of the metal film. Metal film or a metal nitride film thereof (titanium nitride film, molybdenum nitride film, tungsten nitride film).

Further, the buried conductive layers 481a, 481b may also be formed of a conductive metal oxide. As the conductive metal oxide, indium oxide (In 2 O 3 ), tin oxide (SnO 2 ), zinc oxide (ZnO), indium tin oxide (In 2 O 3 -SnO 2 , abbreviated as ITO), or indium oxide can be used. Zinc (In 2 O 3 -ZnO) or a material which makes these metal oxide materials contain cerium oxide.

The insulating layer 491 can be formed by a CVD method, a sputtering method, or the like. Further, the insulating layer 491 is preferably formed of cerium oxide, cerium nitride, cerium oxynitride, cerium oxynitride, aluminum oxide, cerium oxide, cerium oxide or the like. In addition, the insulating layer 491 may have a single layer structure or a stacked structure.

In addition, FIG. 5B is a cross-sectional view of a transistor 450 having a structure different from that of FIG. 5A.

The transistor 450 includes, on the substrate 400 having an insulating surface, an insulating layer 491, an oxide semiconductor layer 403, and first conductive layers 405a and 405b provided with buried conductive layers 481a and 481b and buried oxide semiconductor layers 482a and 482b. The second conductive layers 465a and 465b, the gate insulating layer 402, the gate electrode layer 401, and the interlayer insulating layer 408 (see FIG. 5B).

The structure of FIG. 5B is the same as the structure of FIG. 1 in which a first conductive layer 405a, 405b serving as a source electrode and a drain electrode of the transistor 450 is interposed between the gate insulating layer 402 in a region overlapping the oxide semiconductor layer 403. It overlaps with the gate electrode layer 401. Further, the structure of FIG. 5B is the same as the structure of FIG. 1 in that the second conductive layers 465a, 465b serving as the source electrode and the drain electrode of the transistor 450 are insulated by the gate in the region overlapping the oxide semiconductor layer 403. Layer 402 does not overlap with gate electrode layer 401.

Therefore, the structure of FIG. 5B can improve the conduction characteristics without reducing the current flowing through the source electrode and the drain electrode of the transistor to overlap the source electrode of the transistor, the drain electrode, and the gate electrode. Again, in Figure 5B In the structure, the oxide semiconductor layer and the gate insulating layer can be thinned by reducing the coverage failure of the gate insulating layer.

Further, in particular, in the configuration of FIG. 5B disclosed in the present embodiment, an insulating layer 491 having buried conductive layers 481a and 481b and buried oxide semiconductor layers 482a and 482b is provided at a lower portion of the transistor 450, interposed therebetween. The oxide semiconductor layer 403 is provided with buried conductive layers 481a and 481b and buried oxide semiconductor layers 482a and 482b so as to overlap the first conductive layers 405a and 405b and the second conductive layers 465a and 465b. By providing a structure in which the conductive layers 481a and 481b are buried in the lower portion of the transistor 450, the gate insulating layer 402 and the interlayer insulating layer 408 can be connected to the control circuit provided between and outside the transistor without providing openings. Further, by providing the oxide semiconductor layers 482a, 482b between the buried conductive layers 481a, 481b and the transistor 450, a good connection between the buried conductive layers 481a, 481b and the transistor 450 can be achieved. The contact area of the buried conductive layers 481a, 481b and the transistor 450 can be made large and the buried oxide semiconductor layers 482a, 482b can achieve a good connection with the transistor 450, so that the contact resistance can be reduced.

The buried oxide semiconductor layers 482a and 482b preferably contain at least indium (In) or zinc (Zn). In particular, it is preferred to contain In and Zn. Further, as a non-uniform stabilizer for reducing the electrical characteristics of the transistor using the oxide semiconductor, it is preferable to further contain gallium (Ga) in addition to the above elements. Further, it is preferable to contain tin (Sn) as a stabilizer. Further, as the stabilizer, it is preferred to contain hydrazine (Hf). Further, as the stabilizer, aluminum (Al) is preferably contained. Further, as the stabilizer, it is preferred to have zirconium (Zr).

Further, as the buried oxide semiconductor layers 482a and 482b, a metal oxide which imparts conductivity to the oxide semiconductor layer may be used. As the conductive metal oxide, indium oxide (In 2 O 3 ), tin oxide (SnO 2 ), zinc oxide (ZnO), indium tin oxide (In 2 O 3 -SnO 2 , abbreviated as ITO), or indium oxide can be used. Zinc oxide (In 2 O 3 -ZnO) or a material which makes these metal oxide materials contain cerium oxide.

In addition, FIG. 6A is a cross-sectional view of the transistor 460 which is an example different from the structure of the semiconductor device shown in FIG. 5A.

The transistor 460 includes an insulating layer 491 provided with buried conductive layers 481a, 481b, an oxide semiconductor layer 403, first conductive layers 405a, 405b, second conductive layers 465a, 465b, and a gate on the substrate 400 having an insulating surface. The insulating layer 402, the gate electrode layer 401, and the interlayer insulating layer 408 (see FIG. 6A).

The structure of FIG. 6A is the same as the structure of FIG. 1 in which a first conductive layer 405a, 405b serving as a source electrode and a drain electrode of the transistor 460 is interposed between the gate insulating layer 402 in a region overlapping the oxide semiconductor layer 403. Overlapped on the gate electrode layer 401. Further, the structure of FIG. 6A is insulated from the second conductive layers 465a, 465b serving as the source electrode and the drain electrode of the transistor 460 in the region overlapping the oxide semiconductor layer 403 as in the structure of FIG. Layer 402 does not overlap with gate electrode layer 401.

Therefore, the structure of FIG. 6A can improve the conduction characteristics without reducing the current flowing through the source electrode and the drain electrode of the transistor and overlapping the source electrode of the transistor, the drain electrode, and the gate electrode. Again, in Figure 6A In the structure, the oxide semiconductor layer and the gate insulating layer can be thinned by reducing the coverage failure of the gate insulating layer.

Further, in particular, in the configuration of FIG. 6A disclosed in the present embodiment, as in the configuration of FIG. 5A, an insulating layer 491 having buried conductive layers 481a and 481b is provided under the transistor 460, and an oxide semiconductor layer is interposed therebetween. 403 is provided with buried conductive layers 481a and 481b overlapping the first conductive layers 405a and 405b and the second conductive layers 465a and 465b. By providing a structure in which the conductive layers 481a and 481b are buried in the lower portion of the transistor 460, the gate insulating layer 402 and the interlayer insulating layer 408 can be connected to the control circuit provided between and outside the transistor without providing openings. Since the contact area of the buried conductive layers 481a, 481b and the transistor 460 can be made large, the contact resistance can be reduced.

Further, in particular, in the configuration of FIG. 6A disclosed in the present embodiment, the opening portion 485 is provided in the oxide semiconductor layer 403 to directly connect the first conductive layers 405a and 405b and the buried conductive layers 481a and 481b. By adopting this configuration, it is possible to increase the current flowing through the first conductive layer, the second conductive layer, and the buried conductive layer which are used as the source electrode and the drain electrode of the transistor.

Further, Fig. 6B is a cross-sectional view of a transistor 470 having a structure different from that of Fig. 6A.

The transistor 470 includes an insulating layer 491, an oxide semiconductor layer 403, and first conductive layers 405a and 405b on which the buried conductive layers 481a and 481b and the buried oxide semiconductor layers 482a and 482b are provided on the substrate 400 having an insulating surface. Second conductive layers 465a, 465b, gate insulating layer 402, The gate electrode layer 401 and the interlayer insulating layer 408 (see FIG. 6B).

The structure of FIG. 6B is the same as the structure of FIG. 1. The first conductive layers 405a and 405b serving as the source electrode and the drain electrode of the transistor 470 are interposed between the gate insulating layer 402 in a region overlapping the oxide semiconductor layer 403. Overlapped on the gate electrode layer 401. Further, the structure of FIG. 6B is the same as the structure of FIG. 1 in that the second conductive layers 465a, 465b serving as the source electrode and the drain electrode of the transistor 470 are insulated by the gate in the region overlapping the oxide semiconductor layer 403. Layer 402 does not overlap the gate electrode layer 401.

Therefore, the structure of FIG. 6B can improve the conduction characteristics without reducing the current flowing through the source electrode and the drain electrode of the transistor and superimposing the source electrode of the transistor, the drain electrode, and the gate electrode. Furthermore, in the structure of FIG. 6B, the oxide semiconductor layer and the gate insulating layer can be thinned by reducing the coverage failure of the gate insulating layer.

Further, in particular, in the structure of FIG. 6B disclosed in the present embodiment, an insulating layer 491 having buried conductive layers 481a and 481b and buried oxide semiconductor layers 482a and 482b is provided under the transistor 470, and is oxidized. The semiconductor layer 403 is provided with buried conductive layers 481a and 481b and buried oxide semiconductor layers 482a and 482b so as to overlap the first conductive layers 405a and 405b and the second conductive layers 465a and 465b. By providing a structure in which the conductive layers 481a and 481b are buried in the lower portion of the transistor 470, it is possible to connect the gate insulating layer 402 and the interlayer insulating layer 408 to the control circuit provided between or outside the transistor without providing an opening. Further, by providing the oxide semiconductor layers 482a, 482b between the buried conductive layers 481a, 481b and the transistor 470, the buried conductive layers 481a, 481b and the transistor can be realized. Good connection between 470. The contact area of the buried conductive layers 481a, 481b and the transistor 470 can be made large and the buried oxide semiconductor layers 482a, 482b can achieve a good connection with the transistor 470, so that the contact resistance can be reduced.

Further, in particular, in FIG. 6B shown in the present embodiment, the opening portion 485 is provided in the oxide semiconductor layer 403 to directly connect the first conductive layers 405a and 405b and the buried oxide semiconductor layers 482a and 482b. By adopting this configuration, it is possible to increase the current flowing through the first conductive layer, the second conductive layer, the buried oxide semiconductor layer, and the buried conductive layer which are used as the source electrode and the drain electrode of the transistor.

As described above, in the configuration of the present embodiment, as in the first embodiment, the source electrode and the drain electrode and the gate of the transistor are stacked without reducing the current flowing through the source electrode and the drain electrode of the transistor. The electrode is used to improve the conduction characteristics. Further, in the configuration of the present embodiment, the oxide semiconductor layer and the gate insulating layer can be thinned by reducing the coverage failure of the gate insulating layer. In this case, it is preferable to miniaturize the transistor in which the oxide semiconductor is used as the channel formation region. Further, in particular, in the present embodiment, a buried conductive layer may be provided to reduce contact resistance with the transistor.

This embodiment can be implemented in appropriate combination with other embodiments.

[Embodiment 3]

In the present embodiment, another mode of the semiconductor device will be described with reference to FIGS. 7A to 7C. The same part as the above embodiment or has Portions of functions similar to those of the above embodiments may be formed by methods similar to those of the above embodiments. The same or similar processes as those of the above embodiment can be carried out in a similar manner to the above embodiment. Therefore, the repeated description thereof will be omitted. Further, a detailed description of the same portions will be omitted.

In the present embodiment, FIG. 7A is a plan view of the transistor 420 of FIG. 1 according to Embodiment 1, and FIG. 7B shows a cross-sectional view along XY of FIG. 7A, and FIG. 7C shows a VW along FIG. 7A. Sectional view.

The transistor 420 shown in FIGS. 7A to 7C includes a buffer layer 436, an oxide semiconductor layer 403, first conductive layers 405a, 405b, second conductive layers 465a, 465b, and insulating on the substrate 400 having an insulating surface as in FIG. A layer 407, a gate insulating layer 402, a gate electrode layer 401, and an interlayer insulating layer 408.

In the structure of FIGS. 7A to 7C shown in the present embodiment, as the structure of FIG. 1, the first conductive electrode serving as the source electrode and the drain electrode of the transistor 420 will be used in a region overlapping the oxide semiconductor layer 403. The layers 405a and 405b are overlaid on the gate electrode layer 401 via the gate insulating layer 402. Further, in the structure of FIGS. 7A to 7C shown in the present embodiment, the second conductive layers 465a, 465b serving as the source electrode and the drain electrode of the transistor 420 will be used in a region overlapping the oxide semiconductor layer 403. The gate insulating layer 402 does not overlap the gate electrode layer 401.

In the structure of FIGS. 7A to 7C disclosed in the present embodiment, an end portion of the first conductive layers 405a, 405b serving as a source electrode and a drain electrode of the transistor and a gate electrode serving as a gate electrode may be overlapped and disposed. The end of layer 401. Therefore, the conduction characteristics of the transistor can be improved (for example, the on current) And field-effect mobility) to achieve high-speed response and high-speed driving of semiconductor devices.

Further, in the configuration of FIGS. 7A to 7C disclosed in the present embodiment, the source electrode of the transistor and the first conductive layers 405a and 405b of the gate electrode can be thinned. In particular, by thinning the first conductive layers 405a and 405b, the step of the surface when the gate insulating layer 402 is formed in the vicinity of the channel formation region of the oxide semiconductor layer 403 can be reduced. Therefore, the gate insulating layer 402 can be formed with good coverage. By reducing the coverage failure, the short circuit between the electrodes is suppressed and the reliability is improved.

Further, by thinning the first conductive layers 405a and 405b, the thickness of the first conductive layer 405 formed on the oxide semiconductor layer 403 can be made uniform. Further, by forming the first conductive layer 405 thin, the period required for processing the first conductive layers 405a, 405b can be shortened by etching or the like. Therefore, damage to the oxide semiconductor layer 403 which is generated when the first conductive layers 405a, 405b are processed by etching or the like can be reduced. Therefore, it is possible to improve the reliability.

Further, the structure of FIGS. 7A to 7C shown in the present embodiment can thin the gate insulating layer 402 and thin the oxide semiconductor layer 403. By thinning the gate insulating layer 402 and the oxide semiconductor layer 403, it is possible to improve the conduction characteristics and to operate the transistor as a depletion type. By operating the transistor as a depletion type, it is possible to achieve high collectivization, high-speed driving, and low power consumption.

Furthermore, in the structure of FIGS. 7A to 7C disclosed in the present embodiment, the second electrode serving as the source electrode and the drain electrode of the transistor may not be overlapped. The ends of the electrical layers 465a, 465b and the ends of the gate electrode layers 401 functioning as gate electrodes. Therefore, even if the second conductive layers 465a, 465b are formed thicker than the first conductive layers 405a, 405b, a short circuit between the electrodes is not generated. Thereby, by thickening the second conductive layers 465a and 465b, the current flowing through the source electrode and the drain electrode is increased without causing a short circuit between the electrodes.

Further, in the structures of FIGS. 7A to 7C disclosed in the present embodiment, the second conductive layers 465a, 465b and the insulating layer 407 are overlapped, and the side faces are formed into a tapered shape by processing such as etching. Therefore, even if the second conductive layers 465a, 465b are thickened, the coverage can be improved.

As described above, in the configuration of FIGS. 7A to 7C disclosed in the present embodiment, the source electrode and the drain electrode of the transistor are overlapped without reducing the current flowing through the source electrode and the gate electrode of the transistor. And the gate electrode can improve the conduction characteristics. Furthermore, in the structures of FIGS. 7A to 7C disclosed in the present embodiment, the oxide semiconductor layer and the gate insulating layer can be thinned by reducing the coverage failure of the gate insulating layer. In this case, it is preferable to miniaturize the transistor in which the oxide semiconductor is used as the channel formation region.

This embodiment can be implemented in appropriate combination with other embodiments.

[Embodiment 4]

In the present embodiment, an example of a semiconductor device using the transistor described in the above-described first to third embodiments can be used, and the storage can be maintained even in the absence of power supply. There is no limit to the number of writes. Further, in the semiconductor device of the present embodiment, the transistor structure described in Embodiments 1 to 3 is used as the transistor 162.

The off current of the transistor 162 is small, so that the data can be stored for a long period of time by using such a transistor. In other words, since it is possible to form a semiconductor memory device having an extremely low frequency that does not require an update operation or an update operation, power consumption can be sufficiently reduced.

8A to 8C are examples of the structure of a semiconductor device. 8A is a cross-sectional view of the semiconductor device, FIG. 8B is a plan view of the semiconductor device, and FIG. 8C is a circuit diagram of the semiconductor device. Here, FIG. 8A corresponds to a cross section taken along C1-C2 and D1-D2 in FIG. 8B.

The semiconductor device shown in Figs. 8A and 8B has a transistor 160 using a first semiconductor material at its lower portion and a transistor 162 using a second semiconductor material at its upper portion. The transistor 162 can have the same structure as that shown in Embodiments 1 to 3.

Here, the first semiconductor material and the second semiconductor material are preferably materials having different forbidden band widths. For example, a semiconductor material other than an oxide semiconductor (germanium or the like) may be used for the first semiconductor material, and an oxide semiconductor may be used for the second semiconductor material. A transistor using a material other than an oxide semiconductor is easy to operate at a high speed. On the other hand, a transistor using an oxide semiconductor can retain a charge for a long time by utilizing its characteristics.

Further, although the case where the above-described transistors are all n-channel type transistors will be described, it is of course possible to use a p-channel type transistor. Furthermore, since the technical essence of the disclosed invention lies in the use of an oxide semiconductor for electricity The crystal 162 is used to hold information, and therefore it is not necessary to limit the specific structure of the semiconductor device such as the material for the semiconductor device or the structure of the semiconductor device to the structure shown here.

The transistor 160 in FIG. 8A includes: a channel formation region 116 disposed in a substrate 100 including a semiconductor material (for example, germanium, etc.); an impurity region 120 disposed to sandwich the channel formation region 116; and a metal contacting the impurity region 120 a compound region 124; a gate insulating layer 108 disposed on the channel forming region 116; and a gate electrode layer 110 disposed on the gate insulating layer 108.

An element isolation insulating layer 106 is provided on the substrate 100 so as to surround the transistor 160, and an insulating layer 128 and an interlayer insulating layer 130 are provided to cover the transistor 160. Further, in order to achieve high collectivization, as shown in FIG. 8A, it is preferable to employ a structure in which the transistor 160 does not have a sidewall insulating layer. On the other hand, in the case where the characteristics of the transistor 160 are emphasized, a sidewall insulating layer may be provided on the side surface of the gate electrode layer 110, and an impurity region 120 including a region having a different impurity concentration may be provided.

The transistor 162 shown in Fig. 8A is a transistor in which an oxide semiconductor is used for the channel formation region. Here, the oxide semiconductor layer 144 included in the transistor 162 is preferably highly purified. By using a highly purified oxide semiconductor, a transistor 162 having extremely excellent cutoff characteristics can be obtained.

A single layer or a laminated insulating layer 150 is disposed on the transistor 162. In addition, a region overlapping the first conductive layer 140a and the second conductive layer 141a serving as the electrode layer of the transistor 162 is provided with a conductive layer via the insulating layer 150. The layer 148b is composed of a first conductive layer 140a, a second conductive layer 141a, an insulating layer 142, an insulating layer 150, and a conductive layer 148b. In other words, the first conductive layer 140a and the second conductive layer 141a of the transistor 162 function as one electrode of the capacitive element 164, and the conductive layer 148b serves as the other electrode of the capacitive element 164. In addition, when the capacitive element is not required, a configuration in which the capacitive element 164 is not provided may be employed. In addition, the capacitor element 164 may be separately disposed above the transistor 162.

An insulating layer 152 is provided on the transistor 162 and the capacitor 164. Further, a wiring 156 for connecting the transistor 162 to other transistors is provided on the insulating layer 152. Although not illustrated in FIG. 8A, the wiring 156 is formed by the electrodes formed in the openings provided in the insulating layer 150, the insulating layer 152, and the gate insulating layer 146, and the second conductive layer 141a and the second conductive layer 141b. Electrical connection.

Here, as shown in the first embodiment, the first conductive layer 140a and the first conductive layer 140b are provided so as to overlap with a portion of the conductive layer 148a serving as the gate electrode of the transistor 162. Further, as shown in the first embodiment, the second conductive layer 141a and the second conductive layer 141b are provided so as not to overlap with a part of the conductive layer 148a serving as the gate electrode of the transistor 162. As a result, the source electrode, the drain electrode, and the gate electrode of the transistor can be stacked without reducing the current flowing through the source electrode and the drain electrode of the transistor to improve the conduction characteristics. Further, by reducing the covering failure of the gate insulating layer, the oxide semiconductor layer and the gate insulating layer can be thinned and the transistor can be miniaturized.

In FIGS. 8A and 8B, it is preferred that the transistor 160 and the transistor The 162 at least partially overlaps, and the source region or the drain region of the transistor 160 overlaps with a portion of the oxide semiconductor layer 144. Further, a transistor 162 and a capacitor 164 are provided so as to overlap at least a portion of the transistor 160. For example, the first conductive layer 140a of one electrode of the capacitive element 164 and the gate electrode layer 110 of the transistor 160 are disposed so that at least a part thereof overlaps each other. By adopting such a planar layout, the area occupied by the semiconductor device can be reduced, and high collectivization can be realized.

Next, Fig. 8C shows an example of the circuit configuration corresponding to Figs. 8A and 8B.

In FIG. 8C, the first wiring (1st Line) is connected to the source electrode of the transistor 160. The second wiring (2nd Line) is electrically connected to the drain electrode of the transistor 160. The third wiring (3rd line) is electrically connected to one of the source electrode and the drain electrode of the transistor 162. The fourth wiring (4th Line) is electrically connected to the gate electrode of the transistor 162. The gate electrode of the transistor 160 and one of the source electrode and the drain electrode of the transistor 162 are connected to the other of the electrodes of the capacitor element 164. The fifth wiring (5th line) is connected to the other of the electrodes of the capacitor element 164.

In the semiconductor device shown in FIG. 8C, by effectively utilizing the feature that the potential of the gate electrode of the transistor 160 can be maintained, information can be written, held, and read as described below.

Explain the writing and maintenance of information. First, the potential of the fourth wiring is set to a potential at which the transistor 162 is turned on, and the transistor 162 is turned on. Thereby, the potential of the third wiring is applied to the gate electrode of the transistor 160 and one electrode of the capacitor element 164. That is, A predetermined charge (write) is applied to the gate electrode of the transistor 160. Here, any one of two charges of different potential levels (H level, L level) is applied. Then, by setting the potential of the fourth wiring to a potential at which the transistor 162 is turned off, the transistor 162 is turned off, and the potential applied to the gate electrode of the transistor 160 is held (hold).

Since the off current of the transistor 162 is extremely small, the charge of the gate electrode of the transistor 160 is maintained for a long time.

Next, the reading of the information will be described. When an appropriate potential (readout potential) is applied to the fifth wiring in a state where a predetermined potential (constant potential) is applied to the first wiring, the second wiring has a potential according to the gate electrode held in the transistor 160. Different potentials. The second wiring has the different potential because, in the case where the transistor 160 is of the n-channel type, the threshold voltage Vth_H in appearance when the H-level is applied to the gate electrode of the transistor 160 is lower than that of the transistor. The gate electrode of 160 applies a threshold voltage Vth_L on the appearance of the L-level. Here, the threshold voltage in appearance refers to the potential of the fifth wiring required to make the transistor 160 "on". Therefore, by setting the potential of the fifth wiring to the potential V 0 between V th — H and V th — L , the electric charge applied to the gate electrode of the transistor 160 can be discriminated. For example, in writing, when the H level is supplied, if the potential of the fifth wiring is V 0 (>V th — H ), the transistor 160 becomes “on state”. When the L level is supplied, the transistor 160 maintains the "off state" even if the potential of the fifth wiring is V 0 (<V th_L ). Therefore, the held information can be read out based on the potential of the second wiring.

Note that when the memory cells are arranged in an array, it is necessary to read only the information of the desired memory cells. In this manner, when the information is not read, the potential of the transistor 160 in the "off state", that is, the potential smaller than V th_H , may be applied to the fifth wiring regardless of the state of the gate electrode. Alternatively, the transistor 160 may be in a "on state" regardless of the state of the gate electrode, that is, a potential greater than V th_L may be applied to the fifth wiring.

In the semiconductor device described in the present embodiment, by using a transistor in which an oxide semiconductor is used in the channel formation region with a very small off current, the stored data can be held for a very long period of time. That is to say, since the update work is not required, or the frequency of the update work can be reduced to an extremely low level, the power consumption can be sufficiently reduced. Further, even if there is no power supply (note that it is preferably a fixed potential), it is possible to keep the stored data for a long period of time.

Further, in the semiconductor device described in the present embodiment, high voltage is not required at the time of writing information, and there is no problem that the element is degraded. For example, unlike the case of the conventional non-volatile memory, there is no need to inject electrons into the floating gate or extract electrons from the floating gate, so that problems such as deterioration of the gate insulating layer do not occur at all. That is, in the semiconductor device according to the disclosed invention, there is no limitation on the number of times the conventional non-volatile memory can be rewritten, and the reliability is remarkably improved. Furthermore, information can be written in accordance with the on state or the off state of the transistor, and high speed operation can be easily realized.

This embodiment can be implemented in appropriate combination with other embodiments.

[Embodiment 5]

In the present embodiment, a configuration different from the configuration shown in the fourth embodiment will be described with reference to FIGS. 9A to 10C with respect to the semiconductor device using the transistors described in the first to third embodiments. The semiconductor device is capable of holding stored data even in the absence of power supply, and there is no limitation on the number of writes. Further, in the semiconductor device of the present embodiment, the transistor structure shown in Embodiments 1 to 3 is used as the transistor 162.

FIG. 9A shows an example of a circuit configuration of a semiconductor device, and FIG. 9B is a schematic view showing an example of a semiconductor device. First, the semiconductor device shown in FIG. 9A will be described, and then the semiconductor device shown in FIG. 9B will be described.

In the semiconductor device shown in FIG. 9A, the bit line BL is electrically connected to one electrode serving as a source electrode or a drain electrode of the transistor 162. The word line WL is electrically connected to the gate electrode of the transistor 162. The other electrode that becomes the source electrode or the drain electrode of the transistor 162 is connected to one electrode of the capacitor element 254.

The transistor 162 using an oxide semiconductor has a feature that the off current is extremely small. Therefore, by causing the transistor 162 to be in an off state, the potential of one electrode of the capacitor element 254 (or the charge accumulated in the capacitor element 254) can be stored for a very long time.

Next, a case where information is written and held to the semiconductor device (memory unit 250) shown in FIG. 9A will be described.

First, by setting the potential of the word line WL to a potential at which the transistor 162 is turned on, the transistor 162 is turned on. Thereby, the potential of the bit line BL is applied to one electrode of the capacitive element 254 (writing In). Then, by setting the potential of the word line WL to a potential at which the transistor 162 is turned off, the transistor 162 is turned off, thereby storing the potential (hold) of one electrode of the capacitor 254.

Since the off current of the transistor 162 is extremely small, the potential of one electrode of the capacitor element 254 (or the charge accumulated in the capacitor element) can be stored for a long period of time.

Next, the reading of the information will be described. When the transistor 162 is turned on, the bit line BL in the floating state is electrically connected to one electrode of the capacitor element 254, and thus the charge is redistributed between the bit line BL and one of the electrodes of the capacitor element 254. As a result, the potential of the bit line BL changes. The amount of change in the potential of the bit line BL takes a different value depending on the potential of one electrode of the capacitor element 254 (or the charge accumulated in the capacitor element 254).

For example, in the case where V is the potential of one electrode of the capacitor element 254, C is the capacitance of the capacitor element 254, and CB is the capacitance component of the bit line BL (hereinafter also referred to as bit line capacitance), and Under the condition that the potential of the previous bit line BL is redistributed with VB0 as the electric charge, the potential of the bit line BL after the electric charge is redistributed becomes (CB × VB0 + C × V) / (CB + C). Therefore, as the state of the memory cell 250, when the potential of one electrode of the capacitive element 254 is in two states of V1 and V0 (V1 > V0), the potential of the bit line BL when the potential V1 is held (= (CB × VB0) +C × V1) / (CB + C)) The potential of the bit line BL when the potential V0 is maintained (= (CB × VB0 + C × V0) / (CB + C)).

And, by comparing the potential of the bit line BL with a predetermined potential, To read the information.

As such, the semiconductor device shown in FIG. 9A can maintain the electric charge accumulated in the capacitance element 254 for a long period of time by utilizing the characteristic that the off current of the transistor 162 is extremely small. That is to say, since the update work is not required, or the frequency of the update work can be reduced to an extremely low level, the power consumption can be sufficiently reduced. In addition, even if there is no power supply, it is possible to keep the stored data for a long period of time.

Next, the semiconductor device shown in FIG. 9B will be described.

The semiconductor device shown in FIG. 9B has, in its upper portion as a storage circuit, a memory cell array 251 (memory cell arrays 251a and 251b) having a plurality of memory cells as shown in FIG. 9A. 250. Further, the semiconductor device shown in FIG. 9B has a peripheral circuit 253 for operating the memory cell array 251a and the memory cell array 251b at the lower portion thereof. Further, the peripheral circuit 253 is connected to the memory cell array 251 (memory cell array 251a and memory cell array 251b).

By adopting the configuration shown in FIG. 9B, the peripheral circuit 253 can be disposed directly under the memory cell array 251, so that the miniaturization of the semiconductor device can be realized.

More preferably, a semiconductor material different from the transistor 162 is used as the transistor provided in the peripheral circuit 253. For example, ruthenium, osmium, iridium, ruthenium carbide or gallium arsenide or the like can be used, and a single crystal semiconductor is preferably used. In addition, an organic semiconductor material or the like can also be used. A transistor using such a semiconductor material can perform sufficient high speed operation. Therefore, by using the transistor, various circuits (logic power) required to operate at high speed can be smoothly realized. Road, drive circuit, etc.).

In addition, the semiconductor device shown in FIG. 9B exemplifies a configuration in which two memory cell arrays (memory cell array 251a and memory cell array 251b) are stacked, but the number of stacked memory cell arrays is not limited thereto. A structure in which three or more memory cell arrays are stacked may also be employed.

Next, a specific structure of the memory unit 250 shown in FIG. 9A will be described with reference to FIGS. 10A to 10C.

10A to 10C show an example of the structure of the memory unit 250. A plan view of the memory unit 250 is shown in Fig. 10A, and a cross-sectional view of line A-B of Fig. 10A is shown in Fig. 10B.

The transistor 162 shown in FIGS. 10A and 10B can have the same configuration as that of the transistor shown in the first to third embodiments.

As shown in FIG. 10B, a transistor 162 is provided on the buried conductive layer 502 and the buried conductive layer 504. The buried conductive layer 502 is a wiring used as the bit line BL in FIG. 10A, and is disposed in contact with the first conductive layer 145a of the transistor 162. Further, the buried conductive layer 504 is used as one electrode of the capacitive element 254 in FIG. 10A, and is disposed in contact with the first conductive layer 145b of the transistor 162. A second conductive layer 146a is disposed in contact with the first conductive layer 145a of the transistor 162. A second conductive layer 146b is disposed in contact with the first conductive layer 145b of the transistor 162. The second conductive layer 146b serves as one electrode of the capacitive element 254 on the transistor 162. The conductive layer 506 disposed in the region of the transistor 162 that overlaps the second conductive layer 146b serves as the other electrode of the capacitive element 254.

In addition, the other conductive layer 506 of the capacitive element 254 is connected to the capacitance line 508 as shown in FIG. 10A. The conductive layer 148a serving as a gate electrode provided on the oxide semiconductor layer 144 by the gate insulating layer 147 is connected to the word line 509.

In addition, FIG. 10C shows a cross-sectional view of the memory cell array 251 and a portion connected to the peripheral circuit. The peripheral circuit can be, for example, a structure including an n-channel type transistor 510 and a p-channel type transistor 512. As the semiconductor material using the n-channel type transistor 510 and the p-channel type transistor 512, a semiconductor material other than an oxide semiconductor (such as ruthenium or the like) is preferably used. By using the above materials, high speed operation of the transistors included in the peripheral circuits can be achieved.

By adopting the planar layout shown in FIG. 10A, the area occupied by the semiconductor device can be reduced, and high collectivization can be realized.

As described above, the plurality of memory cells formed in the upper layer are formed of a transistor using an oxide semiconductor. Since the off-state current of the transistor having the non-single-crystal oxide semiconductor containing at least indium, zinc, and oxygen is small, the storage of the data can be maintained for a long period of time by using such a transistor. In other words, the frequency of the update operation can be made extremely low, so that the power consumption can be sufficiently reduced. Further, as shown in FIG. 10B, the capacitor element 254 is formed by laminating the conductive layer 504, the oxide semiconductor layer 144, the gate insulating layer 147, and the conductive layer 506.

As described above, by providing a peripheral circuit having a transistor using a material other than an oxide semiconductor and a storage circuit having a transistor using an oxide semiconductor as one body, a semiconductor having novel characteristics can be realized Device. In addition, the collectiveization of the semiconductor device can be realized by using a laminated structure of the peripheral circuit and the storage circuit.

This embodiment can be implemented in appropriate combination with other embodiments.

[Embodiment 6]

In the present embodiment, an example in which the semiconductor device described in the above embodiment is applied to a mobile device such as a mobile phone, a smart phone, or an e-book reader will be described with reference to FIGS. 11A to 14 .

In mobile devices such as mobile phones, smart phones, and e-book readers, SRAM or DRAM is used to temporarily store image data. This is because the response speed of the flash memory is low, and thus the flash memory is not suitable for image processing. On the other hand, when SRAM or DRAM is used for temporary storage of image data, the following features are obtained.

As shown in FIG. 11A, in a general SRAM, one memory cell is composed of six transistors of a transistor 801 to a transistor 806, and the transistor 801 to the transistor 806 are driven by an X decoder 807 and a Y decoder 808. . The transistor 803 and the transistor 805, and the transistor 804 and the transistor 806 constitute an inverter, respectively, enabling high-speed driving. However, since one memory cell is composed of six transistors, there is a disadvantage that the memory cell area is large. When the minimum size of the design rule is F, the memory cell area of the SRAM is usually 100F 2 to 150F 2 . Therefore, SRAM is the highest unit price per bit in various memories.

On the other hand, in the DRAM, as shown in FIG. 11B, the memory unit is constituted by the transistor 811 and the storage capacitor 812, and the transistor 811 and the storage capacitor 812 are driven by the X decoder 813 and the Y decoder 814. Since one unit is composed of one transistor and one capacitor, the area occupied is small. The storage area of DRAM is generally 10F 2 or less. Note that the DRAM needs to be updated all the time, so power is consumed even without rewriting.

However, the semiconductor device described in the above embodiment has a memory cell area of about 10 F 2 and does not require frequent update operations. Thereby, the memory cell area can be reduced, and power consumption can also be reduced.

Figure 12 shows a block diagram of a mobile device. The mobile device shown in FIG. 12 includes: an RF circuit 901; an analog baseband circuit 902; a digital baseband circuit 903; a battery 904; a power supply circuit 905; an application processor 906; a flash memory 910; a display controller 911; a storage circuit 912; A display 913; a touch sensor 919; an audio circuit 917; and a keyboard 918 and the like. The display 913 has a display portion 914, a source driver 915, and a gate driver 916. The application processor 906 has a CPU (Central Processing Unit) 907, a DSP (Digital Signal Processor) 908, and an interface 909. The storage circuit 912 is generally composed of an SRAM or a DRAM. By using the semiconductor device described in the above embodiments for the portion, information can be written and read at a high speed, and data can be stored for a long period of time, and power consumption can be sufficiently reduced. the amount.

FIG. 13 shows an example in which the semiconductor device described in the above embodiment is used for the storage circuit 950 of the display. The storage circuit 950 shown in FIG. 13 includes: a memory 952; a memory 953; a switch 954; a switch 955; And a memory controller 951. In addition, the storage circuit 950 is connected to: a signal line for transmitting image data (input image data); and a display controller for reading and controlling the data (storing image data) stored in the memory 952 and the memory 953 956; and display 957 for display based on signals from display controller 956.

First, an image data (input image data A) is formed by an application processor (not shown). The input image data A is stored in the memory 952 by the switch 954. Then, the image data (storage image data A) stored in the memory 952 is transmitted to the display 957 by the switch 955 and the display controller 956 for display.

When the input image data A does not change, the stored image data A is generally read from the memory 952 by the display controller 956 via the switch 955 at a cycle of about 30 Hz to 60 Hz.

Further, for example, when the user performs an operation of rewriting the screen (that is, when the input image data A changes), the application processor forms new image data (input image data B). The input image data B is stored in the memory 953 by the switch 954. During this period, the stored image data A is also continuously read from the memory 952 by the switch 955. When a new image (storing image data B) is stored in the memory 953, the stored image data B is read from the next frame of the display 957, and the stored image data B is controlled by the switch 955 and the display controller. 956 is sent to display 957 for display. The reading continues until the next new image data is stored in the memory 952.

As described above, by the memory 952 and the memory 953 alternately The display of the display 957 is performed by writing the image data and reading the image data. Further, the memory 952 and the memory 953 are not limited to two different memories, and one memory may be divided and used. By using the semiconductor device described in the above embodiment in the memory 952 and the memory 953, information can be written and read at a high speed, and data can be stored for a long period of time, and power consumption can be sufficiently reduced.

Figure 14 shows a block diagram of an e-book reader. The e-book reader shown in FIG. 14 includes: battery 1001; power supply circuit 1002; microprocessor 1003; flash memory 1004; audio circuit 1005; keyboard 1006; storage circuit 1007; touch screen 1008; display 1009; 1010.

Here, the semiconductor device described in the above embodiment can be used for the storage circuit 1007 of FIG. The storage circuit 1007 has a function of temporarily holding the contents of the book. As an example of this function, for example, there is a case where the user uses the highlight function. When a user watches an e-book reader, there is a case where a certain part is to be marked. The marking function is referred to as a highlighting function, which means that the difference from the surrounding text is shown by changing the displayed color, adding an underline, boldening the text, or changing the font type of the text. It also refers to the function of storing and maintaining the information of the part specified by the user. When the information is held for a long time, the information can also be copied to the flash memory 1004. Even in this case, by using the semiconductor device described in the above embodiment, it is possible to write and read information at high speed, store data for a long period of time, and sufficiently reduce power consumption.

As described above, the mobile device shown in this embodiment is installed on the basis of The semiconductor device of the embodiment. Therefore, it is possible to realize a mobile device that reads information at a high speed, stores data for a long period of time, and sufficiently reduces power consumption.

This embodiment can be implemented by being combined with other embodiments as appropriate.

[Embodiment 7]

A semiconductor device according to an aspect of the present invention can be used for a display device, a personal computer, or an image reproducing apparatus having a storage medium (typically, a content capable of reproducing a storage medium such as a DVD (Digital Versatile Disc) and having The display is a device for displaying the reproduced image). Other examples of electronic devices that may include a semiconductor device in accordance with one aspect of the present invention are mobile phones, gaming machines including portable gaming machines, portable information terminals, e-book readers, camera devices such as video cameras, or digital stills. Cameras, goggles type displays (head mounted displays), navigation systems, audio reproduction devices (such as car audio systems and digital audio players), photocopiers, fax machines, printers, multifunction printers, ATMs (ATM) and vending machines. Specific examples of these electronic devices are shown in Figs. 15A to 15E.

15A illustrates a portable game machine including: a casing 5001; a casing 5002; a display portion 5003; a display portion 5004; a microphone 5005; a speaker 5006; an operation key 5007; and a stylus pen 5008 and the like. By using a semiconductor device according to one embodiment of the present invention for driving a portable game machine The circuit can provide a portable game machine with a fast working speed. Alternatively, miniaturization of the portable game machine can be achieved by using the semiconductor device according to one embodiment of the present invention. Note that although the portable game machine illustrated in FIG. 15A includes two display portions 5003 and 5004, the display portion included in the portable game machine is not limited to two.

FIG. 15B is a display device including a housing 5201, a display portion 5202, a support table 5203, and the like. By using the semiconductor device according to one embodiment of the present invention for a driving circuit of a display device, it is possible to provide a display device which operates at a high speed. Alternatively, miniaturization of the display device can be achieved by using the semiconductor device according to one embodiment of the present invention. In addition, the display device includes all display devices for information display for personal computers, TV broadcast reception, advertisement display, and the like.

15C is a notebook type personal computer including: a casing 5401; a display portion 5402; a keyboard 5403; and a pointing device 5404 and the like. By using the semiconductor device according to one embodiment of the present invention for a drive circuit of a notebook personal computer, it is possible to provide a notebook type personal computer that operates at a high speed. Alternatively, miniaturization of a notebook personal computer can be realized by using the semiconductor device according to one embodiment of the present invention.

15D is a portable information terminal including: a first housing 5601; a second housing 5602; a first display portion 5603; a second display portion 5604; a connection portion 5605; and an operation key 5606 and the like. The first display portion 5603 is disposed in the first housing 5601, and the second display portion 5604 is disposed in the second housing 5602. Moreover, the first outer casing 5601 and the second outer casing 5602 are connected by a connecting portion 5605, and the first outer casing can be changed by the connecting portion 5605 The angle between the 5601 and the second outer casing 5602. The image of the first display portion 5603 may also be switched according to the angle between the first housing 5601 and the second housing 5602 formed by the connecting portion 5605. Further, a semiconductor display device to which a function as a position input device is added may be used for at least one of the first display portion 5603 and the second display portion 5604. In addition, the function as a position input device can be added by providing a touch panel on the semiconductor display device. Alternatively, it is also possible to add a function as a position input device by providing a photoelectric conversion element called a photo sensor in a pixel portion of a semiconductor display device. By using the semiconductor device according to one embodiment of the present invention for the driving circuit of the portable information terminal, it is possible to provide a portable information terminal that operates at a high speed. Alternatively, miniaturization of the portable information terminal can be achieved by using the semiconductor device according to one embodiment of the present invention.

15E is a mobile phone including: a casing 5801; a display portion 5802; a sound input portion 5803; a sound output portion 5804; an operation key 5805; and a light receiving portion 5806. By converting the light received by the light receiving unit 5806 into an electrical signal, an external image can be extracted. By using the semiconductor device according to one embodiment of the present invention for a driving circuit of a mobile phone, it is possible to provide a mobile phone that operates at a high speed. Alternatively, miniaturization of the mobile phone can be achieved by using the semiconductor device according to one embodiment of the present invention.

This embodiment can be implemented in appropriate combination with other embodiments.

100‧‧‧Substrate

106‧‧‧ Component isolation insulation

108‧‧‧ gate insulation

110‧‧‧ gate electrode layer

116‧‧‧Channel formation area

120‧‧‧ impurity area

124‧‧‧Metal compound area

128‧‧‧Insulation

130‧‧‧Interlayer insulation

140a‧‧‧ Conductive layer

140b‧‧‧ Conductive layer

141a‧‧‧ Conductive layer

141b‧‧‧ Conductive layer

142‧‧‧Insulation

144‧‧‧Oxide semiconductor layer

145a‧‧‧ Conductive layer

145b‧‧‧ Conductive layer

146‧‧‧ gate insulation

148a‧‧‧ Conductive layer

148b‧‧‧ Conductive layer

150‧‧‧Insulation

152‧‧‧Insulation

153‧‧‧ Conductive layer

156‧‧‧ wiring

160‧‧‧Optoelectronics

162‧‧‧Optoelectronics

164‧‧‧Capacitive components

250‧‧‧ memory unit

251‧‧‧Memory Cell Array

251a‧‧‧Memory Cell Array

251b‧‧‧Memory Cell Array

253‧‧‧ peripheral circuits

254‧‧‧Capacitive components

400‧‧‧Substrate

401‧‧‧ gate electrode layer

402‧‧‧ gate insulation

403‧‧‧Oxide semiconductor layer

405‧‧‧ Conductive layer

405a‧‧‧ Conductive layer

405b‧‧‧ Conductive layer

407‧‧‧Insulation

408‧‧‧Interlayer insulation

417‧‧‧Insulation

418‧‧‧ openings

420‧‧‧Optoelectronics

430‧‧‧Optoelectronics

436‧‧‧buffer layer

440‧‧‧Optoelectronics

450‧‧‧Optoelectronics

460‧‧‧Optoelectronics

465‧‧‧ Conductive layer

465a‧‧‧ Conductive layer

465b‧‧‧ Conductive layer

470‧‧‧Optoelectronics

481a‧‧‧ buried in the conductive layer

481b‧‧‧ buried conductive layer

482a‧‧‧Oxide semiconductor layer

482b‧‧‧Oxide semiconductor layer

485‧‧‧ openings

491‧‧‧Insulation

502‧‧‧ buried conductive layer

504‧‧‧ buried conductive layer

506‧‧‧ Conductive layer

508‧‧‧ capacitance line

509‧‧‧ word line

510‧‧‧n channel type transistor

512‧‧‧p channel type transistor

801‧‧‧Optoelectronics

803‧‧‧Optoelectronics

804‧‧‧Optoelectronics

805‧‧‧Optoelectronics

806‧‧‧Optoelectronics

807‧‧‧X decoder

808‧‧‧Y decoder

811‧‧‧Optoelectronics

812‧‧‧Storage capacitor

813‧‧‧X decoder

814‧‧‧Y decoder

901‧‧‧RF circuit

902‧‧‧ analog baseband circuit

903‧‧‧Digital baseband circuit

904‧‧‧Battery

905‧‧‧Power circuit

906‧‧‧Application Processor

907‧‧‧CPU

908‧‧‧DSP

909‧‧ interface

910‧‧‧Flash memory

911‧‧‧ display controller

912‧‧‧Storage circuit

913‧‧‧ display

914‧‧‧Display Department

915‧‧‧Source Driver

916‧‧‧gate driver

917‧‧‧Audio circuit

918‧‧‧ keyboard

919‧‧‧Touch sensor

950‧‧‧Storage circuit

951‧‧‧ memory controller

952‧‧‧ memory

953‧‧‧ memory

954‧‧‧ switch

955‧‧‧ switch

956‧‧‧Display Controller

957‧‧‧ display

1001‧‧‧Battery

1002‧‧‧Power circuit

1003‧‧‧Microprocessor

1004‧‧‧Flash memory

1005‧‧‧ audio circuit

1006‧‧‧ keyboard

1007‧‧‧Storage circuit

1008‧‧‧ touch screen

1009‧‧‧ display

1010‧‧‧Display Controller

5001‧‧‧shell

5002‧‧‧ Shell

5003‧‧‧Display Department

5004‧‧‧Display Department

5005‧‧‧ microphone

5006‧‧‧Speakers

5007‧‧‧ operation keys

5008‧‧‧ stylus

5201‧‧‧Shell

5202‧‧‧Display Department

5203‧‧‧Support table

5401‧‧‧Shell

5402‧‧‧Display Department

5403‧‧‧ keyboard

5404‧‧‧ pointing device

5601‧‧‧Shell

5602‧‧‧Shell

5603‧‧‧Display Department

5604‧‧‧Display Department

5605‧‧‧Connecting Department

5606‧‧‧ operation keys

5801‧‧‧Shell

5802‧‧‧Display Department

5803‧‧‧Sound Input Department

5804‧‧‧Sound Output Department

5805‧‧‧ operation keys

5806‧‧‧Light Receiving Department

In the schema: 1 is a view for explaining one mode of a semiconductor device; FIGS. 2A to 2E are views for explaining one mode of a method of manufacturing a semiconductor device; FIGS. 3A and 3B are views for explaining one mode of the semiconductor device; 5A and 5B are diagrams illustrating one mode of a semiconductor device; FIGS. 6A and 6B are diagrams illustrating one mode of the semiconductor device; and FIGS. 7A to 7C are diagrams illustrating one mode of the semiconductor device; 8C is a cross-sectional view, a plan view, and a circuit diagram showing one mode of the semiconductor device; FIGS. 9A and 9B are a circuit diagram and a perspective view showing one mode of the semiconductor device; and FIGS. 10A to 10C are cross-sectional views showing one mode of the semiconductor device. And FIGS. 11A and 11B are circuit diagrams showing one mode of the semiconductor device; FIG. 12 is a block diagram showing one mode of the semiconductor device; FIG. 13 is a block diagram showing one mode of the semiconductor device; A block diagram of one mode of a semiconductor device; FIGS. 15A to 15E are diagrams showing one mode of an electronic device using a semiconductor device.

400‧‧‧Substrate

401‧‧‧ gate electrode layer

402‧‧‧ gate insulation

403‧‧‧Oxide semiconductor layer

405a‧‧‧ Conductive layer

405b‧‧‧ Conductive layer

407‧‧‧Insulation

408‧‧‧Interlayer insulation

420‧‧‧Optoelectronics

436‧‧‧buffer layer

465a‧‧‧ Conductive layer

465b‧‧‧ Conductive layer

Claims (32)

  1. A semiconductor device comprising: an oxide semiconductor layer disposed on a substrate including an insulating surface; a first conductive layer partially disposed on the oxide semiconductor layer; and a second conductive portion partially disposed on the first conductive layer a gate insulating layer disposed on the oxide semiconductor layer, on the first conductive layer, and on the second conductive layer; and a gate electrode disposed on the oxide semiconductor layer via the gate insulating layer And a layer, wherein the gate electrode layer overlaps the first conductive layer via the gate insulating layer and does not overlap the second conductive layer via the gate insulating layer.
  2. The semiconductor device according to claim 1, wherein the first conductive layer has a thickness of 5 nm or more and 20 nm or less.
  3. The semiconductor device according to claim 1, wherein the gate insulating layer has a thickness of 10 nm or more and 20 nm or less.
  4. The semiconductor device according to claim 1, wherein the oxide semiconductor layer has a thickness of 5 nm or more and 20 nm or less.
  5. A semiconductor device according to claim 1, wherein a buffer layer is provided on the substrate including the insulating surface.
  6. The semiconductor device according to claim 5, wherein the buffer layer comprises an oxide of at least one element selected from the group consisting of aluminum, gallium, zirconium, hafnium and rare earth elements.
  7. The semiconductor device according to claim 1, wherein the oxide semiconductor layer comprises c-axis aligned crystals.
  8. The semiconductor device according to claim 1, wherein the second conductive layer is partially disposed on the oxide semiconductor layer.
  9. A semiconductor device comprising: an oxide semiconductor layer disposed on a substrate including an insulating surface; a first conductive layer partially disposed on the oxide semiconductor layer; and a second conductive portion partially disposed on the first conductive layer a layer; an insulating layer disposed on the second conductive layer; a gate insulating layer disposed on the oxide semiconductor layer, on the first conductive layer, on the second conductive layer, and on the insulating layer; The gate insulating layer is disposed on the gate electrode layer on the oxide semiconductor layer, wherein the gate electrode layer overlaps the first conductive layer via the gate insulating layer and does not overlap the gate insulating layer The second conductive layer overlaps.
  10. The semiconductor device according to claim 9, wherein the first conductive layer has a thickness of 5 nm or more and 20 nm or less.
  11. The semiconductor device according to claim 9, wherein the gate insulating layer has a thickness of 10 nm or more and 20 nm or less.
  12. The semiconductor device according to claim 9, wherein the oxide semiconductor layer has a thickness of 5 nm or more and 20 nm or less.
  13. A semiconductor device according to claim 9 wherein the buffer layer is disposed on the substrate including the insulating surface.
  14. The semiconductor device according to claim 13, wherein the buffer layer comprises an oxide of at least one element selected from the group consisting of aluminum, gallium, zirconium, hafnium and rare earth elements.
  15. The semiconductor device according to claim 9, wherein the oxide semiconductor layer comprises c-axis aligned crystals.
  16. A semiconductor device comprising: an oxide semiconductor layer disposed on a substrate including an insulating surface; a first conductive layer partially disposed on the oxide semiconductor layer; and an insulating layer partially disposed on the first conductive layer; a second conductive layer partially disposed on the insulating layer and in contact with the first conductive layer in the opening of the insulating layer; disposed on the oxide semiconductor layer, on the first conductive layer, and the second conductive layer a gate insulating layer on the insulating layer; and a gate electrode layer disposed on the oxide semiconductor layer via the gate insulating layer, wherein the gate electrode layer is separated from the gate insulating layer The first conductive layer overlaps and does not overlap the second conductive layer via the gate insulating layer.
  17. The semiconductor device according to claim 16, wherein the first conductive layer has a thickness of 5 nm or more and 20 nm or less.
  18. The semiconductor device according to claim 16, wherein the gate insulating layer has a thickness of 10 nm or more and 20 nm or less.
  19. The semiconductor device according to claim 16, wherein the oxide semiconductor layer has a thickness of 5 nm or more and 20 nm or less.
  20. A semiconductor device according to claim 16 wherein the buffer layer is disposed on the substrate including the insulating surface.
  21. The semiconductor device according to claim 20, wherein the buffer layer comprises a group consisting of aluminum, gallium, zirconium, hafnium and rare earth elements Less one element of oxide.
  22. The semiconductor device according to claim 16, wherein the oxide semiconductor layer comprises c-axis aligned crystals.
  23. A semiconductor device comprising: a substrate including an insulating surface; an insulating layer partially including a buried conductive layer on the insulating surface; an oxide semiconductor layer on the insulating layer; and a portion partially disposed on the oxide semiconductor layer a conductive layer; a second conductive layer partially disposed on the first conductive layer; a gate insulating layer disposed on the oxide semiconductor layer, on the first conductive layer, and on the second conductive layer; The gate electrode layer is disposed on the gate electrode layer of the oxide semiconductor layer, wherein the gate electrode layer overlaps the first conductive layer via the gate insulating layer and is not separated by the gate insulating layer Overlapped with the second conductive layer.
  24. The semiconductor device according to claim 23, wherein the buried conductive layer is in contact with the first conductive layer in an opening of the oxide semiconductor layer.
  25. A semiconductor device according to claim 23, wherein the insulating layer partially including the buried conductive layer comprises the buried oxide semiconductor layer buried on the conductive layer.
  26. A semiconductor device according to claim 25, wherein the buried conductive layer and the buried oxide semiconductor layer are partially included in the oxide semiconductor layer in the oxide of the semiconductor device The opening of the semiconductor layer is disposed in contact with the first conductive layer.
  27. The semiconductor device according to claim 23, wherein the first conductive layer has a thickness of 5 nm or more and 20 nm or less.
  28. The semiconductor device according to claim 23, wherein the gate insulating layer has a thickness of 10 nm or more and 20 nm or less.
  29. The semiconductor device according to claim 23, wherein the oxide semiconductor layer has a thickness of 5 nm or more and 20 nm or less.
  30. A semiconductor device according to claim 23, wherein a buffer layer is provided on the substrate including the insulating surface.
  31. The semiconductor device according to claim 30, wherein the buffer layer comprises an oxide of at least one element selected from the group consisting of aluminum, gallium, zirconium, hafnium and rare earth elements.
  32. The semiconductor device according to claim 23, wherein the oxide semiconductor layer comprises c-axis aligned crystals.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104576759A (en) * 2015-01-27 2015-04-29 北京大学 Metal oxide semiconductor thin film transistor and manufacturing method thereof

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5806905B2 (en) 2011-09-30 2015-11-10 株式会社半導体エネルギー研究所 semiconductor device
JP5912394B2 (en) 2011-10-13 2016-04-27 株式会社半導体エネルギー研究所 Semiconductor device
KR20140148305A (en) * 2013-06-21 2014-12-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
US10042446B2 (en) 2013-08-13 2018-08-07 Samsung Electronics Company, Ltd. Interaction modes for object-device interactions
US9569055B2 (en) 2013-08-13 2017-02-14 Samsung Electronics Company, Ltd. Interaction sensing
US9607991B2 (en) * 2013-09-05 2017-03-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI663733B (en) * 2014-06-18 2019-06-21 日商半導體能源研究所股份有限公司 Transistor and semiconductor device
KR20160055369A (en) * 2014-11-07 2016-05-18 삼성디스플레이 주식회사 Thin-film transistor array substrate, organic light emitting display device comprising the same and manufacturing method of the same
TWI581317B (en) * 2014-11-14 2017-05-01 群創光電股份有限公司 Thin film transistor substrate and displaypanel having the thin film transistor substrate
US20160308067A1 (en) * 2015-04-17 2016-10-20 Ishiang Shih Metal oxynitride transistor devices
RU2646545C1 (en) * 2016-12-14 2018-03-05 ООО "Тонкопленочные технологии" Semiconductor resistor
US10490130B2 (en) * 2017-02-10 2019-11-26 Semiconductor Energy Laboratory Co., Ltd. Display system comprising controller which process data
US10084074B1 (en) * 2017-03-24 2018-09-25 Qualcomm Incorporated Compound semiconductor field effect transistor gate length scaling

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01136373A (en) * 1987-11-24 1989-05-29 Nippon Telegr & Teleph Corp <Ntt> Manufacture of thin-film semiconductor device
US5270567A (en) * 1989-09-06 1993-12-14 Casio Computer Co., Ltd. Thin film transistors without capacitances between electrodes thereof
JPH05206166A (en) * 1991-12-26 1993-08-13 Fuji Xerox Co Ltd Thin film transistor
JP4356309B2 (en) * 2002-12-03 2009-11-04 セイコーエプソン株式会社 Transistors, integrated circuits, electro-optical devices, electronic equipment
JP4435057B2 (en) * 2004-12-08 2010-03-17 セイコーエプソン株式会社 Semiconductor device and manufacturing method thereof
JP5078246B2 (en) * 2005-09-29 2012-11-21 株式会社半導体エネルギー研究所 Semiconductor device and manufacturing method of semiconductor device
JP2008218468A (en) * 2007-02-28 2008-09-18 Univ Of Ryukyus Three-dimensional integrated circuit device and manufacturing method thereof
US20100224878A1 (en) * 2009-03-05 2010-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8927981B2 (en) * 2009-03-30 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101460868B1 (en) * 2009-07-10 2014-11-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
WO2011027656A1 (en) * 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Transistor and display device
KR101470811B1 (en) * 2009-09-16 2014-12-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR101837102B1 (en) * 2009-10-30 2018-03-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
WO2011058913A1 (en) * 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR20190009841A (en) * 2009-12-04 2019-01-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
WO2011070901A1 (en) * 2009-12-11 2011-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011077966A1 (en) * 2009-12-25 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104576759A (en) * 2015-01-27 2015-04-29 北京大学 Metal oxide semiconductor thin film transistor and manufacturing method thereof

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KR20140063832A (en) 2014-05-27
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