201241441 六、發明說明： 【發明所屬之技術領域】 本發明係有關使用於電路基板間等的連接之接觸探 針及探針單元。 【先前技術】 以往，進行半導體積體電路與液晶顯示器等之檢查對 象的導通狀態檢查與動作特性檢查時，為了謀求檢查對象 與輸出檢查用信號之信號處理裝置之間的電性連接，使用 收納複數個導電性的接觸探針之探針單元。在探針單元 中，一些技術正在進步中，即伴隨著近年來之半導體積體 電路與液晶顯示器之高集積化、微細化的進展，藉由縮小 接觸探針間的間距，亦可適用於進行高集積化、微細化之 檢查對象。 以縮小接觸探.針間的間距之技術而言，例如有一種技 術為人熟知，該技術係有關依照來自接觸探針的外部之荷 重而具有可彎曲的彈性之金屬線型的接觸探針。與使用有 彈箐之插梢型的接觸探針相比較，金屬線型的接觸探針容 易進行細徑化，於施加荷重時若彎曲的方向不整齊，會有 鄰接之接觸探針彼此相互接觸或與被接觸體之接觸產生偏 差之虞。因此，在接觸探針中，精心設計各種方法，其係 用以使因荷重而彎曲的方向均齊，且予以縮小化（例如，參 考專利文獻1，2)。 其中，在專利文獻1中，揭示有一種探針單元，其係 將複數個接觸探針收納在探針測試台，而該複數個接觸探 324011 4 201241441 針係在與接觸體之接觸間 在此接觸探針中，具有彈簧性之部分係=具有彈簧性。 部分具有共同之處。 ’、、電氣信號的導通 此外，在專敎獻2中 針對接觸探針設置有由橡膠或樹 探針早元’其係 探針單元中，利用接觸探針與電極等的接=性體。在此 生變形，而維持接觸探針與電極的接觸狀:彈性體產 (先則技術文獻） 〜、 (專利文獻） 專利文獻1 .曰本特開平4-277665號公報 專利文獻2 :日本特開2007-17444號公報 【發明内容】 (發明所欲解決之課題） 但是，在專利文獻i所揭示之接觸探針中，有一 題，亦即為了確保彈簧性而必須將接觸探針本身予：： 長，而使得電阻變大且導通性變差。 σ 再者，在專利文獻2所揭示之接觸探針中，有一些門 題’亦即為了確保彈簧性雖無須加長接觸探針本身，ς為 了確保彈簧性所使用之雜體，比起金屬因其重複使用而 導致耐久性及对熱性低。 本發明係鑑於上述問題而研創者，其目的係在提供一 種接觸探針及探針單元，其係使間距縮小化，即使重複使 用其耐久性及耐熱性亦高，且具有彈簧性，同時在接觸對 象間可得到確實且良好的導通。 324011 5 201241441 (解決課題之手段） 為了解決上述課題並達到目的，本發明之接 形成板厚均句之大致平板狀，且連接不同的基板間酿 探針，其具備：第1接觸部，係、具有f曲成弧形之侧面， 且在該侧面與-方的基板接觸；第2接觸部，係具有占 弧形之側面’且在該側面與另一方的基板接觸;連接部 連接前述第1接觸部及前述第2接觸部；以及彈性部ς 前述連接料伸，且位於與前述第丨接卿賴之第^ 面、以及與前述第1平^ 十 第2平…w 與前述第2接觸部接觸的 由施加在前述第1接觸部及前述第2 接觸。卩之何重而產生彈性變形。 此外，本發明之接觸探針係在上述發明中， 部的寬度係比前料接部的寬度還小。 ㈣ 再者，本發明之接觸探針係 接觸部之與前述另一方的其h 別述第2 形。 的基板接觸之側面的外緣係形成弧 ’本發明之接觸探針係在上述發明巾1m =、—部分沿著板面而延伸，且具有—個或複數： 其二=探接觸探針及保持部’ 侧面，且在㈣丨“__接觸和係具有彎曲成弧形之 有彎曲成二二=接觸;第2接觸部，係具 連接部，係連接前述第〗姑面與另一方的基板接觸； 、 ^第1接觸部及前述第2接觸部；以及 324011 ~ 201241441 彈性部，係從前述連接部延伸，且位於與前述第1接觸部 接觸之第1平面、以及與前述第1平面平行且與前述第2 接觸部接觸的第2平面之間，且藉由施加在前述第1接觸 部及前述第2接觸部之荷重而產生彈性變形；而該保持部 係保持前述接觸探針。 此外，本發明之探針單元係在上述發明中，前述保持 部係設置有孔部，該孔部具有與前述彈性部相等之直徑， 用於將前述彈性部之與前述連接部側不同側的端部予以收 納並固定。 再者，本發明之探針單元係在上述發明中，前述保持 部係至少在一部位與前述第2接觸部接觸，於前述第2接 觸部中，在未施加荷重之狀態下將分別與前述另一方的基 板及前述保持部接觸之接觸部位中成為最短之接觸部位彼 此予以連結之外緣形成R形狀。 此外，本發明之探針單元係在上述發明中，前述保持 部係形成有可收納前述接觸探針之縫隙。 (發明之功效） 本發明之接觸探針及探針單元係在大致平板狀之探 針中，於相同的探針内將進行電性導通之部分與具有彈簧 性之部分設為不同的形狀，故可發揮以下效果：使間距縮 小化，即使重複使用其耐久性及耐熱性亦高，且具有彈簧 性，同時在接觸對象間可得到確實且良好的導通。 【實施方式】 以下，利用圖式將用以實施本發明之形態加以詳細說 324011 7 201241441 明。再者，本發明並非由以下的實施形態所限定者。再者， 在以下的說明中參照之各圖’係在可理解本發明的内容之 程度下僅概略性地表示形狀、大小及位置關係。亦即，本 發明並未受到各圖所例示之形狀、大小及位置關係所限定。 (第1實施形態） 第1圖係表示本發明第1實施形態之探針單元的構成 之斜視圖。第1圖所示之探針單元1係進行檢查對象物之 半導體積體電路100的電氣特性檢查時使用之裝置，且將 半導體積體電路1〇〇與對半導體積體電路1〇〇輸出檢查用 L旒的電路基板30之間進行電性連接之裝置。此外，在第 1實施形態中’係將半導體積體電路1〇〇設為具有電極1〇1 之 QFN(Quad Flat Non-leaded Package，四方形扁平無 弓丨腳封裝）者予以說明。 探針單元1具有：導電性的接觸探針20(以下，簡稱 為探針20」）’係與不同的二個被接觸體之半導體積體 電路100及電路基板30接觸；探針支持具1〇，係作為保 寺而依照預定的圖案將複數個探針2 〇予以收納並保 持，以及電路基板3〇，係抵接於探針支持具丨〇的底部， 且、盈由探針20對半導體積體電路輸出檢查用信號。 _如第2圖所示，電路基板30具有電極31 ,其係用以 每由探針20對半導體積體電路⑽輸出檢查用信號之電 極電極31係對應保持在探針支持具1〇之探針2〇而配設 電路基板30上《此外，探針支持具丨〇與電路基板3〇 係可利用螺絲等予以連接’或亦可利用接著劑或密封構件 201241441 來黏接。亦即，探針去姓 只要不妨礙探針2(^^ 路基板⑽的黏接形態， 態。 °與電極31的接觸，亦可為任何黏接形 探針支持具10係使用樹脂、可加 性材料而形成，且具右 陶是、矽#絕緣 的收納空間之收納部u^可收納半導體積體電路⑽ 針20之縫隙12。縫淨二及用：依照預定圖案來保持探 部11側之方式來保持探 體電路1〇〇從探針支持具之上二312係半導體積 成在與對應之半導體積”㈣各探針20形 第3圖係表示第丨圖所^ 1接觸之位置。 構成的分解斜視圖。如第3圖 疋1的主要部分之 Μ的長方體形狀’且在底^卜: = = 卸於探針支持具心固㈣件13。有固錢㈣而可裝 並固絕緣性材料而形成，且具有保持 口部15。孔部u係將插通在縫隙12=;10還大的開 以收納，且以使探針2G之另-方的尖"V 2Q的端部予 U的預定位置之方式保持探針20。再^分位於收納部 20固疋在預疋間隔及預定方向’即可將保持部的構成僅設 為固定構件13’或亦可將探針單元1Q與固定構件η的孔 部14予以一體成形。 第4圖係表示第1本實施形態的探針20之斜視圖。 此外，第5圖係表示第i實施形態之探針2q的側視圖。此 324011 9 201241441 外，第6圖係表示第1圖所示之探針單元丨的主要部分之 構成的部分剖面圖。第4,5圖所示之探針2〇係板厚均勻之 大致平板狀，且具備·第1接觸部21，係在尖端部具有彎 曲成弧形之側面，且在此側面與半導體積體電路1〇〇接 觸，第2接觸部22，係具有彎曲成弧形之側面，且在此側 面與電路基板30接觸；帶狀的連接部23，係連接第丨接 觸部21及第2接觸部22 ;以及彈性部24，係從連接部23 延伸，且位於第1平面Gl與第2平面Gz之間，其中，第t 平面G,係與第丨接觸部21接觸，而第2平面Gz係與第ι 平面Gi平行且與第2接觸部22接觸，而該彈性部24係利 用施加在第1接觸部21及第2接觸部22之荷重而產生彈 性變形。探針2〇係使用m ㈣t 再者，亦可為使用具有彈性之金屬材料予以成形後，在表 面施加鍵覆加工之探針。 ，第2接觸部22之與電路基板30接觸之側面的外緣係 二成弧形，而如第6圖所示之剖面圖，該第2接觸部22 係保持在探針支持具10且與電路基板30之電極31抵接。 在此’將第2接觸部22之外緣、亦即分別抵接於固定構件 3及電極31之接觸部位所彼此中成為最短之接觸部位彼 此予以連結的外緣係形成R形狀。此R形狀的半徑為0SR m(_)。最好是R形狀的半徑為〇^RS5〇Um)。 如第5圖所示，彈性部24之與板厚方向正交之寬度 W1 ^比連接部23的寬度W2還小。因此，彈性部24係針 對粑加在第1接觸部21或第2接觸部22之荷重比其他的 324011 201241441 4刀更今易產生彈性變形。此外，彈性部係以與連接部 23的f曲態樣呈現凹凸相反的彎曲態樣從連接部23延 伸。彈性部24係重複凹凸相反的彎曲部分而延伸成曲折 狀。彈性部24係、來回於與平面Gi G2大致正交之方向，而 形成朝與平面心平行之方向延伸的形狀。再者，彈性部 24的寬度與連接部23的寬度之比，係只要彈性部24可優 先產生彈性變形’則可為任何比。此外，彈性部之與連 接部23侧不同之側面的端部係形成直線狀而延伸，且此直 線狀部分的尖端部係插入到孔部14而絲，而探針2〇係 保持在探針支持具1 ()。 、，此外，如上所述，彈性部24係位於第丨平面Gl與第2 平面G2之間，其中，第1平面Gi係與第1接觸部21接觸， 而第2平面G4與第1平面Gi平行且與第2接觸部接 觸亦即，彈性部24係以從第2平面&至彈性部24之離 第2平面G2最遠的點為止之距離犯，比第與第2 平面G2間的距離dl還小之方式彎曲而形成。藉此方式， 如第6圖料’當探針2G料在探針支持具料，探針 2〇的配設高度係在第1接觸部21變得最高。因此，從探 針20之上方接近檢查對象時，不會與彈性部μ接觸，而 可使第1接觸部21與檢查對象接觸。 #第7圖係表示在第1接觸部21或第2接觸部22施加 有4重的狀態之部分剖面圖。如第7圖所示，第丨接觸部 21與半導體積體電路100的電極m接觸而施加荷重時， 彈性部24的-曲部分會產生彈性變形。在此，虛線ρ。係 324011 201241441 表示在從半導體積體電路100未施加荷重的狀態下之探針 20的位置（參照第6圖）。 來自外部之荷重施加到第1接觸部21時，第1接觸 部2卜第2接觸部22(包含連接部23)不會產生彈性變形， 而依照荷重一邊與電極1〇1 ,電極31抵接且一邊移動。此 外’彈性部24係依照經由連接部23及第2接觸部22傳達 之荷重而產生彈性變形。再者，此時流動的電流之大部分 係流動於第1接觸部21、連接部23及第2接觸部22。 第8圖係荷重施加在第1接觸部21之前後之第j接 觸部21與電極1〇1之接觸狀態以及第2接觸部22與電極 31之接觸狀態的說明圖。首先，第8圖（a)係表示半導體 積體電路100的電極101抵接於第1接觸部21之狀態（未 施加荷重之狀態）。將此時之第丨接觸部21與電極1〇丨之 接觸點设為S〇，且將第2接觸部22與電極31之接觸點設 為C〇。 在第8圖（a)中，半導體積體電路1〇〇移動於圖中下 方時，荷重施加到第1接觸部21，將第丨接觸部21壓低。 藉由此第1接觸部21的移動使得第1接觸部21的電極1〇1 及第2接觸部22的電極31之接觸點分別偏移到S|，Ci(第 8圖（b))。再者，虛線Pfl係表示在未施加有第8圖（&)所示 之荷重的狀態下的探針20之位置’虛線1〇係表示第8圖 (a)所示之半導體積體電路的位置。 在此，第1接觸部21及第2接觸部22係接觸點沿著 各電極101，31的形成面而移動。因此，各接觸部與對應之 324011 12 201241441 各電小，而可抑制接觸部及電極各別的磨耗。 依據上述第i實施形態在 成之探針巾，於彳目畴_ '’屬戶斤構 彈菁性之部分設為不同性導通之部分與具有 使重複使料耐久性及耐此可㈣賴小化，即 而造成電性導通路徑變長、，、、而二阿’且不會因確保彈簧性 灯確實的電性導通，同時可確保探針的彈寄性。進 此外，由於各接觸部針對鱼 ' ^ A 、電極之接觸而使接觸點移 == 電極之間的摩擦，而可抑制接觸部及 電極的磨耗。此時，在第2接觸部中，藉由將與電極接觸 之侧面的端部形成R形狀’即可使第2接觸部更有效地在 電極面上旋轉’故可更有效地抑制電極的磨耗。 此外’將彈性部24的端部保持在固定構件13的孔部 14時’藉由將第2接觸部22抵接於固定構件㈣壁面而 具有定位的效果’故可容易地將探針2{)配設在探針單元i 之預定位置。 依據第1實施形態之探針，對安裴在探針支持具的探 針進行交換時，僅於探針的插拔方向來予以插拔便可容易 地進行探針的交換。 者，雖針對在對第1接觸部21未施加有重力以外 的外力$ At . 免 狀態下，第2接觸部22的側面與固定構件ι3的 壁面抵接者進行說明，但亦可為位於第2接觸部22的電極 31側之側的至少-點與固定構件13接觸。 在上述第1實施形態中，雖針對半導體積體電路在外 324011 13 201241441 部未具有引線之QFN者進行說明，但亦可為具有引線之半 導體積體電路（Quad fiat Package(四方平面封裝）：qfp)。 此外’第1實施形態之探針亦可適用於電源模組等之必須 有數（至數十）安培的電流之裝置。 第9圖係表示第1實施形態的第1變形例之探針的側 視圖。第9圖所示之探針2〇a為板厚均勻之大致平板狀， 且具備上述第1接觸部21、第2接觸部22及連接部23， 以及彈性部25 ’該彈性部25係從連接部23延伸，且形成 聲曲成弧形的形狀，且利用施加在第1接觸部21及第2 接觸部22之荷重來產生彈性變形。探針2〇a係與探針2〇 相同，使用銅、鎳、鈷、鈀等的合金而形成。此外，亦可 為使用具有彈性之金屬材料成形後，在表面施加鍍覆加工 之探針。 彈性部25係與第5圖所示之彈性部24相同，比起連 接。卩23的寬度，具有小的寬度。再者，與彈性部25的連 卩23側不同側的端部係形成直線狀而延伸，且此直線狀 部分的尖端部係插入在孔部14而安裝，且探針2〇a保持在 探針支持具1〇。 眭Λ彈丨生邛Μ係從連接部23之外緣沿著板面而延伸。彈 ρ 25與第5圖所示之探針2〇相同，係以使從第2平面 士到彈性部25之離第2平面G2最遠的點為止之距離d3, • V比第1平面匕與第2平面ο?之間的距離以 之 式形成。 第丨〇圖係表示第1實施形態的第2變形例之探針的 324011 201241441 側視圖。帛1G圖所示之探針施係板厚均勻之大致平板 狀，且具備上述第丨接觸部21、第2接觸部22及連接部 23以及彈性部26，該彈性部26係從連接部23延伸，且 重複f曲部分而形成曲折狀，且利用施加在第丨接觸部21 及第2接觸部22之荷重而產生彈性變形。探針2〇b與探針 20相同，係使用銅、鎳、鉛、纪等的合金而形成。再者， 亦可為使料㈣性的金屬㈣而成形後，在表面施加鑛 覆加工之探針。 彈性部26係與第5圖所示之彈性部24相同，比起連 接部23的寬度，具有小的寬度。此外，彈性部26之與連 接部23侧不同的側面之端部係形成直線狀而延伸，而此直 線狀部分的尖端部係插入在孔部14而安裝，且探針2〇b 保持在探針支持具1〇。 彈性部26係從連接部23的外緣沿著板面延伸而形 成。此外，彈性部26係以與連接部23的彎曲態樣呈現凹 凸相反的彎曲態樣而從連接部23延伸。彈性部26係重複 凹凸相反的彎曲部分延伸為曲折狀。彈性部26係來回於與 平面Gi，G2平行的方向，而形成朝與平面Gi，G2垂直的方向 延伸的形狀。彈性部26與第5圖所示之探針20相同，係 以使從第2平面G2至彈性部26之離第2平面〇2最遠的點 為止之距離d4，比第1平面Gl與第2平面G2之間的距離 dl還小之方式弯曲而形成。 (第2實施形態） 第11圖係表示本發明第2實施形態之探針單元的構 324011 201241441 成之斜視圖。第!2圖係表示本發明第2 疋的構成之分解斜視圖。再者，^〈稞針卓 單元1相同的構成要素標示相同的符號圖St述探針 之探針單元2係進行檢查斜象物夕+ μ 實轭形態 體電路102之電氣特性檢查時使用平板狀的半導體積 針支持具1G、探針20、探針 '置’且具備上述探 其中，探針支持具40係以與配气、及電路基板50， 之-方的面之中央部的接地電極=路102 針20,而電路基板5G係具有用以經由 ^來保持探 :體電謂輸出檢查用信號之電極5 二導體 由探針支持具R4〇及固定構件13來構成 ^=犯。 2實施形態中’係針對半導體積體電路102且有第，：第 =的電極⑽及接地電極104之_者進行說 圖所 ::支持具HMQ及固定構件13，若至少表 ^缘 性材料所覆蓋，則内部亦可由金屬等導電性材料來料邑緣 第14圖及第15圖係表示第u圖及第12圖料之探 早7L的主要料的構叙分解斜視圖。料 ^使用樹脂、可加工陶曼、料絕緣性材料而' ::納部U的收納空間，且具有縫隙41及支持具孔42内 、中，縫隙41係對應縫隙12而供探針2〇插通者，而支 ^42係在探針支持具_中央部依照預定圖案保持探 〇。縫隙41係對應形成在探針支持具10之縫隙12而 =。探針支持具4G係將後述之第i構件他與第、2構件 〇b予以積層而構成。 324011 16 201241441 探針支持具4〇係將位於第14圖及帛15_上面側 之第1構件_與位於下面側之第2構件40b予以積層而 構成。在第1構件術及第2構件働，係對應縫隙而 形成有第1縫隙413及第2縫隙仙，而構成縫隙4卜第 1縫隙41a及第2縫隙41 b係以使缺口形狀-致之方式形 成。再者’於第1構^ 40a及第2構件，齡別形成 相同數量之用以收納複數個探針20之第！支持具孔42a 及第2支持具孔42b ’而構成支持具孔42。第2構件4〇b 具有孔部43，該孔部43係將與探針20之彈性部24的連 接部23之連結側不同的側之端部予以收納而保持探針 20。探針20係利用孔部43 ’以使至少第1接觸部21從支 持具孔42(探針支持具40的上面）突出之方式予以保持。 第1支持具孔42a係形成可收納探針2〇之大致柱狀。 此外，第1支持具孔42a係形成在與對應之第2支持具孔 42b及孔部43連通之位置。再者，第2支持具孔42b係以 與第1支持具孔42a相同的寬度形成，而形成可收納探針 20之第1接觸部21、第2接觸部22及連接部23之大致柱 狀0 與第6圖相同，保持在孔部43之探針20之第2接觸 部22係抵接在第2支持具孔42b的内部壁面。使半導體積 體電路102接近探針單元2時，保持在探針支持具40之探 針20的第1接觸部21係與接地電極ι〇4接觸，而第2接 觸部22則與接地電極52接觸。 依據上述第2實施形態，與第1實施形態相同，在由 324011 17 201241441 大致平板狀的金屬所構成之探針中，將在相同探針内進行 電性導通之部分與具有彈簧性之部分設為不同的形狀，故 可使間距縮小化，即使重複使用其财久性及耐熱性亦高， 且不會因確保彈簧性而造成電性導通路徑變長，而可進行 探針的設計，並可進行確實的電性導通，同時可確保探針 的彈簧性。 此外，保持在探針支持具之探針係與半導體積體電路 接觸之接觸部的高度比彈性部的高度更高，故可使半導體 積體電路從上方接近而與電路基板進行導通。此時，針對 形成在相同平面之電極、例如配置在半導體積體電路的板 面之中央之接地電極，亦藉由配置相同的探針，而 電性導通。 雖針對上述探針支持具40係由第1構件術 構件40b所構成者進行說明，但亦可設為一體成形。 ^屋業上之可利用性） 缩d ，本發^接職針騎針單元係使間距 普性二 複❹其耐久性及耐熱性亦高，且具有彈 r㈣時在接觸對象間可得到確實且良好的導通。 【圖式簡單說明】 之斜2圖係表示本發明第1實施形態之探針單元的構成 成之第1圖所示之探針單元的主要部分的構 所不之探針單元的主要部分的構 第3圖係表示第i圖 324011 201241441 成之分解斜視圖。 圖。圖係表林發明第1實施形態的接觸探針之斜視 第5圖係表示本發明第1實施形態的接觸探針之侧視 所示之探針單元的主要部分之構 所示之探針單元的主要部分之構 第6圖係表示第j圖 成的部分剖面圖。 第7圖係表示第1圖 成的部分剖面圖。 圖所示之探針單元的主要部分之構 第8圖係表示第1 成的部分剖面圖。 第9圖係表示本發明第 觸探針的側視圖。 1實施形態的第1變形例之接 第10圖係表示本發明第 接觸探針的側視圖。 第11圖係表示本發明第 成的斜視圖。 1實施形態的第2變形例之 2實施形態的探針單元之構 第12圖係表示本發明第2實施形態的探針單元之様 成的分解斜視圖。 第13圖係表示使用在本發明第2實施形態的探針 元之半導體積體電路的斜視圖。 第14圖係表示第U’12圖所示之探針單元的主要 分之構成的分解斜視圖。 ° 第15圖係表示第1112圖所示之探針單元的主要部 324011 201241441 分之構成的分解斜視圖。 【主要元件符號說明】 1 探針單元 11 收納部 13 固定構件 15 開口部 21 第1接觸部 23 連接部 30、50 電路基板 40a 第1構件 41a 第1縫隙 42 支持具孔 42b 第2支持具孔 100 半導體積體電路 dl > d2 ' d3 距離 G2 第2平面 10、40 探針支持具 12、41 縫隙 14、43 孔部 20、20a、20b 探針 22 第2接觸部 24、25、26 彈性部 3卜5卜1(U、103 電極 40b 第2構件 41b 第2縫隙 42a 第1支持具孔 52、104接地電極 G1 第1平面 W1、W2 寬度 324011 20201241441 VI. Description of the Invention: TECHNICAL FIELD The present invention relates to a contact probe and a probe unit for use in connection between circuit boards and the like. [Prior Art] When the conduction state inspection and the operation characteristic inspection of the semiconductor integrated circuit and the liquid crystal display are inspected, the electrical connection between the inspection target and the signal processing device for outputting the inspection signal is performed. A probe unit of a plurality of conductive contact probes. In the probe unit, some technologies are progressing, that is, with the progress of high integration and miniaturization of semiconductor integrated circuits and liquid crystal displays in recent years, it is also suitable for performing the narrowing of the pitch between the contact probes. High-integration and miniaturization inspection objects. In order to reduce the distance between the contacts and the needles, for example, there is a technique known in the art for a metal wire type contact probe having a bendable elasticity in accordance with the load from the outside of the contact probe. Compared with the contact probe using the cartridge type, the metal wire type contact probe is easy to be thinned, and if the direction of the bending is not uniform when the load is applied, the adjacent contact probes may contact each other or Deviation from contact with the contacted body. Therefore, in the contact probe, various methods have been carefully designed to make the direction of bending due to the load uniform and to be reduced (for example, refer to Patent Documents 1, 2). Among them, Patent Document 1 discloses a probe unit in which a plurality of contact probes are housed in a probe test stand, and the plurality of contact probes 324111 4 201241441 are attached between contacts with the contact body. Among the contact probes, the spring-like portion is spring-like. Some have something in common. </ RTI> Electrical conduction of the contact signal The contact probe is provided with a contact probe, an electrode, or the like. In this case, the contact between the contact probe and the electrode is maintained, and the contact between the contact probe and the electrode is maintained. (Embodiment) (Patent Document) Patent Document 1. Japanese Patent Application Laid-Open No. Hei 4-277665 Patent Document 2: JP-A SUMMARY OF THE INVENTION (Problem to be Solved by the Invention) However, in the contact probe disclosed in Patent Document i, there is a problem that the contact probe itself must be given in order to ensure springability: It is long, and the electric resistance becomes large and the conductivity is deteriorated. σ Furthermore, in the contact probe disclosed in Patent Document 2, there are some problems of the door, that is, in order to ensure the spring property, it is not necessary to lengthen the contact probe itself, and the metal used for ensuring the spring property is compared with the metal. Its repeated use results in low durability and low heat. The present invention has been made in view of the above problems, and an object thereof is to provide a contact probe and a probe unit which are reduced in pitch, and which have high durability and heat resistance even when used repeatedly, and have spring properties, and A true and good conduction can be obtained between the contact objects. 324011 5 201241441 (Means for Solving the Problem) In order to solve the above problems and achieve the object, the present invention has a substantially flat plate shape and a different inter-substrate brewing probe, and includes a first contact portion. a side surface having an arc curved and contacting the substrate on the side surface; the second contact portion having a curved side surface and contacting the other substrate on the side surface; and the connecting portion connecting the foregoing a contact portion and the second contact portion; and an elastic portion 前述 the connection material is extended, and is located on the first surface of the first 卿 卿 赖 以及 、 and the first The contact of the contact portion is applied to the first contact portion and the second contact. What is the weight and the elastic deformation. Further, in the above-described invention, the contact probe of the present invention has a width smaller than the width of the front material joint portion. (4) Further, the contact probe of the present invention is in the form of a second contact with the other of the contact portions. The outer edge of the side of the substrate contact forms an arc. The contact probe of the present invention is in the above-mentioned invention towel 1m =, - the portion extends along the plate surface, and has one or plural: two = probe contact probe and The retaining portion 'side, and in (4) 丨 "__ contact and the system has a curved shape into a curved shape to bend into two = contact; the second contact portion, the tie connecting portion, is connected to the aforementioned a substrate contact; a ^ first contact portion and the second contact portion; and 324011 to 201241441 an elastic portion extending from the connection portion and located on a first plane in contact with the first contact portion and the first plane The second flat surface that is in parallel with the second contact portion is elastically deformed by the load applied to the first contact portion and the second contact portion, and the holding portion holds the contact probe. Further, in the probe unit according to the invention of the invention, the holding portion is provided with a hole portion having a diameter equal to that of the elastic portion, and the hole portion is different from the side of the connecting portion The end is stored and Further, in the probe unit of the present invention, the holding portion is in contact with the second contact portion at least in one portion, and the second contact portion is in a state where no load is applied. The contact point which is the shortest contact point with the other substrate and the holding portion is connected to each other to form an R-shape. Further, in the probe unit of the present invention, the holding portion is formed The slit of the contact probe can be accommodated. (Effect of the invention) The contact probe and the probe unit of the present invention are in a substantially flat probe, and the portion which is electrically conductive in the same probe has a spring Since the part of the property is set to have a different shape, the effect is reduced, and the durability is improved, the heat resistance is high, and the spring property is obtained, and the positive and good conduction between the contact objects can be obtained. [Embodiment] Hereinafter, the form for carrying out the present invention will be described in detail with reference to the drawings 324011 7 201241441. Further, the present invention is not limited to the following In addition, the drawings referred to in the following description only schematically show the shape, size, and positional relationship to the extent that the content of the present invention can be understood. That is, the present invention is not affected by the present invention. The first embodiment is a perspective view showing a configuration of a probe unit according to a first embodiment of the present invention. The probe unit shown in Fig. 1 is a first embodiment of the present invention. 1 is a device used for inspecting electrical characteristics of the semiconductor integrated circuit 100 of the inspection object, and between the semiconductor integrated circuit 1A and the circuit substrate 30 for outputting the inspection L旒 to the semiconductor integrated circuit 1? In the first embodiment, the semiconductor integrated circuit 1 is a QFN (Quad Flat Non-leaded Package) having an electrode 1〇1. ) to explain. The probe unit 1 has a conductive contact probe 20 (hereinafter simply referred to as "probe 20")" in contact with the semiconductor integrated circuit 100 and the circuit substrate 30 of the two different contact bodies; the probe holder 1 In other words, a plurality of probes 2 are stored and held in accordance with a predetermined pattern as a temple, and the circuit board 3A is brought into contact with the bottom of the probe holder, and the probe 20 is paired. The semiconductor integrated circuit outputs a signal for inspection. As shown in Fig. 2, the circuit board 30 has an electrode 31 for holding the electrode electrode 31 for outputting an inspection signal to the semiconductor integrated circuit (10) by the probe 20, and is held in the probe holder 1 The magnetic circuit board 30 is disposed on the circuit board 30. Further, the probe support member and the circuit board 3 may be connected by screws or the like, or may be bonded by an adhesive or a sealing member 201241441. That is, the probe surname is not hindered by the probe 2 (the bonding state of the substrate (10), the state of the contact with the electrode 31, or any adhesive probe supporting the 10 series using resin, The accommodating portion of the storage space having the right ceramic and the 绝缘# insulation can be accommodated in the semiconductor integrated circuit (10). The slit 12 of the needle 20. The slit is used for the second portion: the probe 11 is held in accordance with a predetermined pattern. Side way to keep the probe circuit 1 〇〇 from the probe support on the second 312 series semiconductor product in the corresponding semiconductor product" (four) each probe 20-shaped third diagram shows the second map Position. The exploded oblique view of the structure. The rectangular shape of the main part of the figure in Figure 3疋1 is at the bottom of the frame: = = unloading the probe support with the heart solid (four) piece 13. There is solid money (four) and can be loaded The insulating material is formed and has a retaining mouth portion 15. The hole portion u is inserted through the slit 12=; 10 is still large to accommodate, and the tip of the probe 2G is further "V" The end of the 2Q is held in a predetermined position of the U to hold the probe 20. The portion of the 2Q is placed in the accommodating portion 20 at a predetermined interval and a predetermined direction. The configuration of the holding portion may be merely a fixing member 13' or the probe unit 1Q may be integrally formed with the hole portion 14 of the fixing member η. Fig. 4 is a perspective view showing the probe 20 of the first embodiment. In addition, Fig. 5 is a side view showing the probe 2q of the i-th embodiment. This is a partial cross-sectional view showing the configuration of the main part of the probe unit 第 shown in Fig. 1 . The probe 2 shown in FIGS. 4 and 5 has a substantially flat plate shape and has a substantially flat plate shape, and includes a first contact portion 21 having a side curved at an end portion, and a semiconductor product on the side surface. The body circuit 1 is in contact with each other, and the second contact portion 22 has a side surface curved in an arc shape and is in contact with the circuit board 30 on the side surface; the strip-shaped connecting portion 23 is connected to the second contact portion 21 and the second contact portion. The portion 22 and the elastic portion 24 extend from the connecting portion 23 and are located between the first plane G1 and the second plane Gz, wherein the t-th plane G is in contact with the second contact portion 21, and the second plane Gz It is parallel to the first plane Gi and is in contact with the second contact portion 22, and the elastic portion 24 is applied to the first portion 1 The load of the contact portion 21 and the second contact portion 22 is elastically deformed. The probe 2 is made of m (four) t, and may be a probe which is formed by applying a metal material having elasticity and then applying a key to the surface. The outer edge of the side surface of the second contact portion 22 that is in contact with the circuit board 30 is curved, and the second contact portion 22 is held in the probe holder 10 as shown in the cross-sectional view of FIG. The electrode 31 of the circuit board 30 is in contact with each other. Here, the outer edge of the second contact portion 22, that is, the contact portion that abuts the contact portion between the fixing member 3 and the electrode 31, respectively, is connected to each other as the shortest contact portion. The outer edge forms an R shape. The radius of this R shape is 0SR m(_). Preferably, the radius of the R shape is 〇^RS5〇Um). As shown in Fig. 5, the width W1 of the elastic portion 24 orthogonal to the thickness direction is smaller than the width W2 of the connecting portion 23. Therefore, the load applied to the first contact portion 21 or the second contact portion 22 by the elastic portion 24 is more elastically deformed than the other 324011 201241441. Further, the elastic portion is extended from the connecting portion 23 in a curved state opposite to the concave-convex shape of the connecting portion 23. The elastic portion 24 is formed in a zigzag shape by repeating a curved portion having opposite convexities and convexities. The elastic portion 24 is formed to extend in a direction substantially perpendicular to the plane Gi G2 to form a shape extending in a direction parallel to the plane of the plane. Further, the ratio of the width of the elastic portion 24 to the width of the connecting portion 23 may be any ratio as long as the elastic portion 24 can preferentially be elastically deformed. Further, the end portion of the elastic portion which is different from the side of the connecting portion 23 is formed to extend linearly, and the tip end portion of the linear portion is inserted into the hole portion 14 to be wire, and the probe 2 is held in the probe. Support with 1 (). Further, as described above, the elastic portion 24 is located between the second plane G1 and the second plane G2, wherein the first plane Gi is in contact with the first contact portion 21, and the second plane G4 and the first plane Gi are In parallel with the second contact portion, that is, the elastic portion 24 is caused by the distance from the second plane & to the point where the elastic portion 24 is farthest from the second plane G2, and is between the second plane G2 and the second plane G2. The distance from the dl is small and curved. In this way, as shown in Fig. 6, when the probe 2G material is supported by the probe, the height of the probe 2 is set to be the highest in the first contact portion 21. Therefore, when approaching the inspection target from above the probe 20, the first contact portion 21 can be brought into contact with the inspection target without coming into contact with the elastic portion μ. Fig. 7 is a partial cross-sectional view showing a state in which the first contact portion 21 or the second contact portion 22 is applied with four weights. As shown in Fig. 7, when the second contact portion 21 comes into contact with the electrode m of the semiconductor integrated circuit 100 and a load is applied, the curved portion of the elastic portion 24 is elastically deformed. Here, the broken line ρ. The system 324011 201241441 indicates the position of the probe 20 in a state where no load is applied from the semiconductor integrated circuit 100 (see Fig. 6). When the load from the outside is applied to the first contact portion 21, the second contact portion 22 (including the connecting portion 23) of the first contact portion 2 does not elastically deform, but is in contact with the electrode 1〇1 and the electrode 31 in accordance with the load. And move on one side. Further, the elastic portion 24 is elastically deformed in accordance with the load transmitted through the connecting portion 23 and the second contact portion 22. Further, most of the current flowing at this time flows through the first contact portion 21, the connection portion 23, and the second contact portion 22. Fig. 8 is an explanatory view showing a state in which the load of the j-contact portion 21 and the electrode 1〇1 before and after the first contact portion 21 are applied, and a state in which the second contact portion 22 is in contact with the electrode 31. First, Fig. 8(a) shows a state in which the electrode 101 of the semiconductor integrated circuit 100 is in contact with the first contact portion 21 (a state in which no load is applied). At this time, the contact point of the second contact portion 21 and the electrode 1A is S〇, and the contact point between the second contact portion 22 and the electrode 31 is C〇. In Fig. 8(a), when the semiconductor integrated circuit 1 is moved to the lower side in the figure, the load is applied to the first contact portion 21, and the second contact portion 21 is depressed. By the movement of the first contact portion 21, the contact points of the electrode 1〇1 of the first contact portion 21 and the electrode 31 of the second contact portion 22 are shifted to S|, Ci, respectively (Fig. 8(b)). Further, the broken line Pfl indicates the position of the probe 20 in a state where the load shown in Fig. 8 (&) is not applied. The broken line 1 indicates the semiconductor integrated circuit shown in Fig. 8(a). s position. Here, the contact points of the first contact portion 21 and the second contact portion 22 move along the surface on which the electrodes 101 and 31 are formed. Therefore, each contact portion and the corresponding 324011 12 201241441 are electrically small, and the respective wear of the contact portion and the electrode can be suppressed. According to the above-mentioned i-th embodiment, in the probe towel, the part of the 彳目 domain _ '' is a different part of the conductive body, and has the durability of the repeating material and the resistance (4) The miniaturization, that is, the electrical conduction path becomes longer, and the second is not ensured by the electrical continuity of the spring lamp, and the springability of the probe is ensured. Further, since the contact portions move the contact point with the contact of the fish ' ^ A and the electrode == friction between the electrodes, the wear of the contact portion and the electrode can be suppressed. In this case, in the second contact portion, the end portion of the side surface in contact with the electrode is formed into an R shape, so that the second contact portion can be more effectively rotated on the electrode surface, so that the electrode wear can be more effectively suppressed. . Further, 'when the end portion of the elastic portion 24 is held by the hole portion 14 of the fixing member 13', the positioning effect is obtained by abutting the second contact portion 22 against the wall surface of the fixing member (4), so the probe 2 can be easily used. ) is disposed at a predetermined position of the probe unit i. According to the probe of the first embodiment, when the ampoule is exchanged between the probes of the probe holder, the probe can be easily exchanged only by the insertion and removal of the probe. The external force $At other than the gravity is not applied to the first contact portion 21. In the free state, the side surface of the second contact portion 22 is in contact with the wall surface of the fixing member ι3, but it may be located at the At least a point on the side of the electrode 31 side of the contact portion 22 is in contact with the fixing member 13. In the first embodiment, the semiconductor integrated circuit is described as being a QFN having no lead at 324011 13 201241441, but may be a semiconductor integrated circuit having a lead (Quad Fat Package: qfp). ). Further, the probe of the first embodiment can be applied to a device having a number (up to several tens of amps) of current required for a power module or the like. Fig. 9 is a side view showing the probe according to the first modification of the first embodiment. The probe 2〇a shown in Fig. 9 has a substantially flat plate shape with uniform thickness, and includes the first contact portion 21, the second contact portion 22, and the connecting portion 23, and the elastic portion 25'. The connecting portion 23 extends and forms a shape that is curved in an acoustic shape, and is elastically deformed by the load applied to the first contact portion 21 and the second contact portion 22. The probe 2A is formed in the same manner as the probe 2A, and is formed using an alloy of copper, nickel, cobalt, palladium or the like. Further, it is also possible to apply a plating process to the surface after molding using a metal material having elasticity. The elastic portion 25 is the same as the elastic portion 24 shown in Fig. 5, and is connected to each other.卩23 width, with a small width. Further, the end portion on the side different from the side of the link 23 of the elastic portion 25 is linearly extended, and the tip end portion of the linear portion is inserted into the hole portion 14 to be mounted, and the probe 2〇a is kept in the probe. The needle support has 1 inch. The ballistic raft is extended from the outer edge of the connecting portion 23 along the plate surface. The spring ρ 25 is the same as the probe 2 所示 shown in Fig. 5, and is a distance d3 from the second plane to the point farthest from the second plane G2 of the elastic portion 25, • V is smaller than the first plane 匕The distance from the second plane ο? is formed in a manner. The figure is a side view of the probe 324011 201241441 of the second modification of the first embodiment. The probe shown in FIG. 1G has a substantially flat plate-like thickness, and includes the second contact portion 21, the second contact portion 22, the connecting portion 23, and the elastic portion 26, and the elastic portion 26 is connected from the connecting portion 23. The bent portion is repeated to form a meandering shape, and elastic deformation is caused by the load applied to the second contact portion 21 and the second contact portion 22. The probe 2〇b is formed similarly to the probe 20 by using an alloy of copper, nickel, lead, or the like. Further, after the metal (four) of the material (four) is formed, a probe for mineral processing may be applied to the surface. The elastic portion 26 is the same as the elastic portion 24 shown in Fig. 5, and has a small width compared to the width of the connecting portion 23. Further, the end portion of the side surface of the elastic portion 26 different from the side of the connecting portion 23 is linearly extended, and the tip end portion of the linear portion is inserted into the hole portion 14 to be mounted, and the probe 2〇b is kept in the probe. The needle support has 1 inch. The elastic portion 26 is formed to extend from the outer edge of the connecting portion 23 along the plate surface. Further, the elastic portion 26 is extended from the connecting portion 23 in a curved state opposite to the convex portion of the connecting portion 23 in a curved state. The elastic portion 26 is formed such that the curved portion opposite to the unevenness is formed in a meander shape. The elastic portion 26 is formed in a shape extending in a direction perpendicular to the planes Gi, G2 in a direction parallel to the planes Gi, G2. Similarly to the probe 20 shown in Fig. 5, the elastic portion 26 is such that the distance d4 from the second plane G2 to the point farthest from the second plane 〇2 of the elastic portion 26 is larger than the first plane G1 and The distance d1 between the planes G2 is formed by bending in a small manner. (Second Embodiment) Fig. 11 is a perspective view showing the structure of a probe unit according to a second embodiment of the present invention, 324011 201241441. Fig. 2 is an exploded perspective view showing the configuration of the second aspect of the present invention. In addition, the same components of the 稞 卓 卓 unit 1 are denoted by the same symbol. The probe unit 2 of the probe is used to check the electrical characteristics of the slanting object + + μ singular body circuit 102. The semiconductor semiconductor device support 1G, the probe 20, and the probe 'set' have the above-described probes, and the probe holder 40 is grounded to the central portion of the gas distribution and the surface of the circuit board 50. The electrode = the path 102 pin 20, and the circuit board 5G has the electrode 5 for holding the signal for the detection of the body electrical output. The two conductors are constituted by the probe holder R4 and the fixing member 13. In the second embodiment, the semiconductor integrated circuit 102 is provided with the first electrode (10) and the ground electrode 104. The support is: HMQ and the fixing member 13, and at least the surface material is used. If it is covered, the inside can also be made of a conductive material such as a metal. The 14th and 15th drawings show a schematic exploded view of the main material of the 7th and the 12th. The material is made of resin, mason, and insulating material, and the storage space of the ':Na portion U has a slit 41 and a support hole 42 in the middle, and the slit 41 corresponds to the slit 12 for the probe 2〇. The inserter, while the support 42 is held in the center of the probe holder _ according to a predetermined pattern. The slit 41 corresponds to the slit 12 formed in the probe holder 10 and =. The probe holder 4G system is constructed by laminating an ith member to be described later and a second member 〇b. 324011 16 201241441 The probe support device is constructed by laminating a first member _ located on the upper side of Fig. 14 and 帛15_ with a second member 40b located on the lower side. In the first member and the second member, the first slit 413 and the second slit are formed corresponding to the slit, and the slit 4 is formed into the slit 4a and the second slit 41b so as to form a notch shape. The way is formed. Furthermore, in the first configuration 40a and the second member, the same number of numbers are used to accommodate the plurality of probes 20! The support hole 42 is formed by supporting the hole 42a and the second support hole 42b'. The second member 4'b has a hole portion 43 for accommodating the end portion on the side different from the connection side of the connecting portion 23 of the elastic portion 24 of the probe 20, and holding the probe 20. The probe 20 is held by the hole portion 43' so that at least the first contact portion 21 protrudes from the holder hole 42 (the upper surface of the probe holder 40). The first support hole 42a is formed in a substantially columnar shape in which the probe 2 is accommodated. Further, the first holder hole 42a is formed at a position communicating with the corresponding second holder hole 42b and the hole portion 43. Further, the second holder hole 42b is formed to have the same width as the first holder hole 42a, and is formed in a substantially columnar shape in which the first contact portion 21, the second contact portion 22, and the connection portion 23 of the probe 20 can be housed. 0 As in Fig. 6, the second contact portion 22 of the probe 20 held by the hole portion 43 abuts against the inner wall surface of the second holder hole 42b. When the semiconductor integrated circuit 102 is brought close to the probe unit 2, the first contact portion 21 of the probe 20 held by the probe holder 40 is in contact with the ground electrode ι 4, and the second contact portion 22 is connected to the ground electrode 52. contact. According to the second embodiment, as in the first embodiment, in the probe which is formed of a substantially flat metal of 324011 17 201241441, a portion electrically connected to the same probe and a portion having a spring property are provided. Because of the different shapes, the pitch can be reduced, and even if it is repeatedly used, the durability and heat resistance are high, and the electrical conduction path is not longened by ensuring the spring property, and the probe can be designed and A reliable electrical conduction can be made while ensuring the springability of the probe. Further, since the height of the contact portion of the probe holder held by the probe holder in contact with the semiconductor integrated circuit is higher than the height of the elastic portion, the semiconductor integrated circuit can be brought into contact with the circuit substrate from above. At this time, the electrodes formed on the same plane, for example, the ground electrodes disposed at the center of the surface of the semiconductor integrated circuit are electrically connected by disposing the same probe. Although the probe holder 40 is described as being constituted by the first member member 40b, it may be integrally formed. ^Usageability in the housing industry) Shrinking d, this hair ^ pick-up needle riding unit is made of high-precision and heat resistance, and has a high elasticity (r) And good conduction. BRIEF DESCRIPTION OF THE DRAWINGS The oblique portion 2 of the probe unit of the first embodiment of the present invention is configured such that the main portion of the probe unit shown in Fig. 1 is not the main part of the probe unit. Figure 3 shows an exploded perspective view of Figure 324011 201241441. Figure. The squint of the contact probe according to the first embodiment of the invention is shown in Fig. 5. The probe unit shown in the main part of the probe unit shown in the side view of the contact probe according to the first embodiment of the present invention is shown. Figure 6 of the main part of the structure shows a partial cross-sectional view of the j-th. Fig. 7 is a partial cross-sectional view showing the first drawing. Fig. 8 is a partial cross-sectional view showing the first portion of the probe unit shown in the figure. Fig. 9 is a side view showing the first touch probe of the present invention. The first modification of the first embodiment is a side view of the first contact probe of the present invention. Figure 11 is a perspective view showing the first embodiment of the present invention. 1st configuration of the probe unit according to the second embodiment of the present invention. Fig. 12 is an exploded perspective view showing the configuration of the probe unit according to the second embodiment of the present invention. Fig. 13 is a perspective view showing a semiconductor integrated circuit using the probe element of the second embodiment of the present invention. Fig. 14 is an exploded perspective view showing the configuration of the main components of the probe unit shown in Fig. U'12. Fig. 15 is an exploded perspective view showing the configuration of the main part 324011 201241441 of the probe unit shown in Fig. 1112. [Description of main components] 1 probe unit 11 accommodating portion 13 fixing member 15 opening portion 21 first contact portion 23 connecting portion 30, 50 circuit board 40a first member 41a first slit 42 support hole 42b second support hole 100 semiconductor integrated circuit dl > d2 ' d3 distance G2 second plane 10, 40 probe support 12, 41 slit 14, 43 hole 20, 20a, 20b probe 22 second contact 24, 25, 26 elasticity Part 3 Bu 5 1 (U, 103 electrode 40b second member 41b second slit 42a first support hole 52, 104 ground electrode G1 first plane W1, W2 width 324011 20