TW201227822A - Method for manufacturing nano-structure patterned substrate - Google Patents
Method for manufacturing nano-structure patterned substrate Download PDFInfo
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- TW201227822A TW201227822A TW99145672A TW99145672A TW201227822A TW 201227822 A TW201227822 A TW 201227822A TW 99145672 A TW99145672 A TW 99145672A TW 99145672 A TW99145672 A TW 99145672A TW 201227822 A TW201227822 A TW 201227822A
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- nanostructure
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- 239000000758 substrate Substances 0.000 title claims abstract description 48
- 239000002086 nanomaterial Substances 0.000 title claims abstract description 29
- 238000000034 method Methods 0.000 title claims abstract description 26
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 230000003647 oxidation Effects 0.000 claims abstract description 7
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 7
- 238000007743 anodising Methods 0.000 claims description 7
- 239000003792 electrolyte Substances 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 4
- 238000002048 anodisation reaction Methods 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 239000011148 porous material Substances 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 2
- 229910001220 stainless steel Inorganic materials 0.000 claims description 2
- 239000010935 stainless steel Substances 0.000 claims description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 1
- 241000238631 Hexapoda Species 0.000 claims 1
- 240000007594 Oryza sativa Species 0.000 claims 1
- 235000007164 Oryza sativa Nutrition 0.000 claims 1
- 239000004698 Polyethylene Substances 0.000 claims 1
- 239000004372 Polyvinyl alcohol Substances 0.000 claims 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims 1
- 229910052732 germanium Inorganic materials 0.000 claims 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 claims 1
- 229920000642 polymer Polymers 0.000 claims 1
- 235000009566 rice Nutrition 0.000 claims 1
- 229910052594 sapphire Inorganic materials 0.000 claims 1
- 239000010980 sapphire Substances 0.000 claims 1
- 238000010025 steaming Methods 0.000 claims 1
- 229910003468 tantalcarbide Inorganic materials 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 abstract description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 7
- 238000005530 etching Methods 0.000 abstract 2
- 230000004888 barrier function Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 239000010407 anodic oxide Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 238000004945 emulsification Methods 0.000 description 1
- 230000003631 expected effect Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
201227822 六、發明說明: 【發明所屬之技術領域】 本發明係關於一種奈米結構圖案基板之製造方法。特別 地,本發明是揭露在任何基板上製作一奈米結構圖案,進而 獲得一種大面積、低成本、快速及可在任何基材上製作奈米 結構圖案之製造方法。 τ''' 【先前技術】 在半導體和光電元件領域,關於高轉換效率和高残光 .效率一直是太陽能電池、發光二極體及光檢測器等元件追求 的目標,此半導體和光電元件製作的共同點是需要一種合適 基板成長元件。目前製造奈米結構圖案之基板主要是利用傳 統黃光顯影製程,此製程主要是根據雷利準則(Ray丨dgh criterion) ’光學系統所能夠分辨出的最小寬度,與光的波長 成正比,而與數值孔徑(NA)成反比,因此要獲到更小之奈米 結構,就需要使用波長更短的光源’以製造出奈米結構圖案 的基板,但其缺點為成本增加和製程困難度提高。另外也可 利用電子束郷法來製造奈米結構圖案之基板,其缺點為僅 能小範圍製作和設備成本昂貴。 綜合以上所述,現有奈米結構圖案之基板的製造方法繁 多,在設計與製作上也不盡相同,因此在預期的效果也不 盡相同。如何獲到一種大面積、低成本、快速及可在任何 基板上製作奈米結構圖案之製造方法,乃為目前半導體光電 業者亟待解決之重要技術問題。 201227822 【發明内容】 本發明係提供-種奈米結構 種方法可以製造出—奈米結構_之、紐。w藉此 下列步 具體實施例’該奈米結構之製造方法 驟·百先,—贿额上_成綠 鍍、熱細騎化學城等長 =鍍、機 半導體、金屬、陶纽高分子_’此基板可為 石钱石夕、玻璃、不銹鋼、pe、PVa等)。録皿貝 洞結=陽===出-具有奈米孔 數(電解液濃度、電解液、、7 =由。周麵極乳化方法之參 間等參_編直_^度〜喻_、陽極氧化時 進-步,陽極氧化過財 硫酸及鹽酸等)進 產生-遮障層,可用-觸_如^化_孔洞底部會 行移除此遮障層。 之後,以一 進行乾式歧式氧化_作為鮮, 表面。 ⑻王將料之圖案轉移至-基板 極氣:二歸-基板上的陽 氏成本.块速及可在任何基材上製作奈米結構圖案之製造方 201227822 法。 關於本發明之優點與精神可以藉由以下的創作詳述及所 附圖式得到進一步的瞭解。 【實施方式】 請-併參見圖-、圖二、圖三、圖四、圖五及圖六。 如圖-所示,本發明之-實施例為該具奈米結構圖案之基 鲁 板6的製造方法包含下列步驟:首先,執行步驟S10,將面 積為2x2 cm2之P财基板i ’放入電子束蒸錄系統之反應腔 (reactor)成長一鋁膜2。 進-步’執行步驟SU,將試片放入鐵氟龍製作之特殊 模具内’該模具使用一銅板作為與基板】背面接觸電極之設 什’並將銅導線拉出f陽極端’該模具設計可讓基板!僅露出 銘膜2正祕觸到電解液。之後絲好基板丨讀具整組放置 在充滿電解液之燒杯中,電解液為草酸(邮2〇4)溶液,並以 _ 電源供給ϋ於基板上的賴與轉液之間杨—偏壓,電解 液端使用石墨棒當陰極;基板lf面骑極,㈣行第一次陽 極氧化處理,處理時間為2至1〇分鐘。該步驟已在賴2上製 ^乍出深度錢之陽極氧化賴3制。由贿孔_部為陽極 氧化賴3組成之遮障層,此遮障層會阻正陽極氧化賴⑽ 孔洞繼續擴大,因此必紐用顧將麟層移除後,再進行 第人陽極氧化處理。第一次陽極氧化處理之步驟條件與第 -人陽極氧化處理綱。第二次陽極氧化處理後之基板1,1 轉2⑽旗有·直麵50 nm左右之陽減化賴3。經 201227822 處,之具有奈_陽極氧化_,其孔 障層完全歸’ ^^陽^此_再㈣魏酬步驟將遮 之遮罩。 "讓%極氧化紹膜3成為具有貫穿孔洞結構201227822 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to a method of manufacturing a nanostructure pattern substrate. In particular, the present invention discloses a method of fabricating a nanostructure pattern on any substrate to obtain a large area, low cost, rapid and processable nanostructure pattern on any substrate. τ''' [Prior Art] In the field of semiconductors and optoelectronic components, high conversion efficiency and high afterglow. Efficiency has always been the goal of components such as solar cells, light-emitting diodes and photodetectors. What is common is the need for a suitable substrate growth component. At present, the substrate for fabricating the nano structure pattern mainly utilizes a conventional yellow light developing process, which is mainly based on the Ray 丨 criterion (Ray 丨 dgh criterion) 'the minimum width that the optical system can distinguish, and is proportional to the wavelength of the light, and In contrast to the numerical aperture (NA), in order to obtain a smaller nanostructure, it is necessary to use a light source with a shorter wavelength to fabricate a substrate having a nanostructure pattern, but the disadvantages are increased cost and improved process difficulty. . Alternatively, an electron beam enthalpy method can be used to fabricate a substrate having a nanostructure pattern, which has the disadvantage of being inexpensive to fabricate and equipment. In summary, the conventional nanostructured substrate has a wide variety of manufacturing methods and is not identical in design and fabrication, and therefore the expected effects are not the same. How to obtain a large-area, low-cost, fast manufacturing method for fabricating nano-structure patterns on any substrate is an important technical problem that needs to be solved urgently by semiconductor optoelectronics. 201227822 SUMMARY OF THE INVENTION The present invention provides a nanostructure method which can produce a nanostructure. w By the following steps, the specific embodiment 'the manufacturing method of the nano structure, the first hundred, the bribe amount _ into the green plating, hot fine riding chemical city, etc. = plating, machine semiconductor, metal, ceramics _ 'This substrate can be stone money, glass, stainless steel, pe, PVa, etc.). Recording dish hole knot = Yang == = out - with nanopore number (electrolyte concentration, electrolyte, 7 = by. The surface of the surface emulsification method of the parameters of the parameters _ straight _ ^ degrees ~ Yu _, In the case of anodization, the step-by-step, anodizing, sulfuric acid, hydrochloric acid, etc.) are introduced into the barrier layer, and the barrier layer can be removed by the bottom of the hole. After that, the dry-type oxidized _ is used as a fresh, surface. (8) Wang transferred the pattern of the material to the substrate. The gas: the second return - the cost of the anode on the substrate. The block speed and the manufacturer of the nanostructure pattern on any substrate. 201227822 Method. The advantages and spirit of the present invention will be further understood from the following detailed description and the accompanying drawings. [Embodiment] Please - see Figure -, Figure 2, Figure 3, Figure 4, Figure 5 and Figure 6. As shown in the figure, the method for manufacturing the base plate 6 having the nano structure pattern includes the following steps: First, step S10 is performed to place the P substrate i' with an area of 2x2 cm2. The reaction chamber of the electron beam vaporization system grows an aluminum film 2. Step-by-step 'Execute step SU, put the test piece into a special mold made of Teflon'. The mold uses a copper plate as the substrate to contact the back surface of the electrode and pull the copper wire out of the f-anode end' Designed to allow the substrate! Only the exposed film 2 is exposed to the electrolyte. After that, the substrate is placed in a beaker filled with electrolyte, and the electrolyte is an oxalic acid (Post 2〇4) solution, and the _ power is supplied to the substrate and the liquid is biased between the liquid and the liquid. The electrolyte end uses a graphite rod as the cathode; the substrate lf faces the pole, and (4) the first anodizing treatment, and the treatment time is 2 to 1 minute. This step has been made on the Lai 2 to produce the anodized Lai 3 system. The barrier layer composed of the anodic oxide layer 3 is blocked by the brittle hole _ part, and the barrier layer will block the positive anodic oxidation (10), and the hole will continue to expand. Therefore, the nucleus layer is removed, and then the first person is anodized. . The first anodizing treatment step conditions and the first-man anodizing treatment. After the second anodizing treatment, the substrate 1 , 1 turns 2 (10) flag has a straight surface of about 50 nm of yang reduction. After 201227822, it has a negative anodic oxidation _, and its pore barrier layer is completely returned to the ^ ^ ^ 阳 ^ this _ then (four) Wei reward step will cover the mask. "Let the % polar oxide film 3 have a through-hole structure
Jll S12 j 1 刻f程,將衫叙雜離子射“瓶應㈣,進行蝕 …2疋使用氣體為印/〇2,_時間為約3至5分鐘。 陽極氧似=步驟S13 ’將秒基板1放入鱗酸溶液中去除 氧化_ ’域式電雜刻移除錄板1表面的陽極 乳化铭膜3麵,製作成表面直徑約% 圖案的石夕基板,如圖六。 石之不水、、。構 上述之實施例僅為例示性說明本發明之特點及 而非用於限制本發明之實質技術内容的範圍。任何熟 白此技藝之人士均可在不違背本發明之精神及範舞下,對 ^=^多飾與變化。因此’本發明之權利保護範 圍應女後述之申請專利範圍所列。 【圖式簡單說明】 圖-係根據本翻之—具财施狀奈紐構 造方法。 圖二係根據本發明之—具體實侧U分的方塊圖。 圖三係根據本發明之—具體實施例之第二部分的方塊圖。 圖四係根據本發明之—具體實施例之第三部分的方塊圖。 201227822 圖五係根據本發明之一具體實施例之第四部分的方塊圖。 圖六係根據本發明之一具體實施例之奈米結構圖案基板的 電子顯微鏡圖。Jll S12 j 1 engraved f, the shirt will be mixed with the ion "the bottle should be (four), carry out the eclipse... 2 疋 use gas for the printing / 〇 2, _ time is about 3 to 5 minutes. Anode oxygen like = step S13 'to the second The substrate 1 is placed in a scaly acid solution to remove oxidation _ 'Domain type electric etch to remove the surface of the anode emulsified film 3 on the surface of the recording board 1 to form a stone etch substrate having a surface diameter of about %, as shown in Fig. 6. The above-described embodiments are merely illustrative of the features of the present invention and are not intended to limit the scope of the technical scope of the present invention. Any person skilled in the art can do without departing from the spirit of the present invention. Under the fan dance, there are many decorations and changes to ^=^. Therefore, the scope of protection of the invention should be listed in the patent application scope described later by the woman. [Simple description of the diagram] The figure-based is based on this Figure 2 is a block diagram of a second portion of a specific embodiment in accordance with the present invention. Figure 4 is a block diagram of a second portion of a specific embodiment in accordance with the present invention. The block diagram of the third part of the example. 201227822 Figure 5 is based on this The fourth embodiment of a block diagram of one particular embodiment Ming. Figure VI of the present invention, according to one embodiment of the electron microscope of FIG nano structure patterned substrate specific embodiments.
【主要元件符號說明】 S10〜S13 流程步驟 4 奈米結構 1 基板 5 #刻材料 2 鋁膜 6 具奈米結構圖案基板 3 陽極氧化鋁膜[Main component symbol description] S10~S13 Flow step 4 Nanostructure 1 Substrate 5 #刻材料 2 Aluminium film 6 Nano structure pattern substrate 3 Anodic aluminum oxide film
77
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TWI588037B (en) * | 2015-07-17 | 2017-06-21 | 國立成功大學 | Method for forming photorealistic figures by dye-free and one-time anodic-aluminum oxidizing process and substrate comprising such figure made therefrom |
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TWI588037B (en) * | 2015-07-17 | 2017-06-21 | 國立成功大學 | Method for forming photorealistic figures by dye-free and one-time anodic-aluminum oxidizing process and substrate comprising such figure made therefrom |
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