TW201227822A - Method for manufacturing nano-structure patterned substrate - Google Patents

Method for manufacturing nano-structure patterned substrate Download PDF

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Publication number
TW201227822A
TW201227822A TW99145672A TW99145672A TW201227822A TW 201227822 A TW201227822 A TW 201227822A TW 99145672 A TW99145672 A TW 99145672A TW 99145672 A TW99145672 A TW 99145672A TW 201227822 A TW201227822 A TW 201227822A
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Taiwan
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substrate
manufacturing
nanostructure
pattern
nano
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TW99145672A
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Chinese (zh)
Inventor
guo-ren Zhang
jia-qing Lin
Jian-De Jiang
wen-zheng Ke
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Chung Shan Inst Of Science
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Priority to TW99145672A priority Critical patent/TW201227822A/en
Publication of TW201227822A publication Critical patent/TW201227822A/en

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Abstract

The present invention mainly provides a method for manufacturing a nano-structure patterned substrate, which includes the following steps: first growing an aluminum film directly on a substrate, then using an anodic oxidation method to process the aluminum film to an anodic oxidized aluminum layer with nanometer hole structures, further utilizing the anodic oxidized aluminum layer as an etching mask to transfer the pattern onto the substrate by the method of etching, finally removing the anodic oxidized aluminum layer from the substrate to form the nano-structure patterned substrate, such that a method for quickly manufacturing the nano-structure on larger area of any substrate at lower cost is provided.

Description

201227822 六、發明說明: 【發明所屬之技術領域】 本發明係關於一種奈米結構圖案基板之製造方法。特別 地,本發明是揭露在任何基板上製作一奈米結構圖案,進而 獲得一種大面積、低成本、快速及可在任何基材上製作奈米 結構圖案之製造方法。 τ''' 【先前技術】 在半導體和光電元件領域,關於高轉換效率和高残光 .效率一直是太陽能電池、發光二極體及光檢測器等元件追求 的目標,此半導體和光電元件製作的共同點是需要一種合適 基板成長元件。目前製造奈米結構圖案之基板主要是利用傳 統黃光顯影製程,此製程主要是根據雷利準則(Ray丨dgh criterion) ’光學系統所能夠分辨出的最小寬度,與光的波長 成正比,而與數值孔徑(NA)成反比,因此要獲到更小之奈米 結構,就需要使用波長更短的光源’以製造出奈米結構圖案 的基板,但其缺點為成本增加和製程困難度提高。另外也可 利用電子束郷法來製造奈米結構圖案之基板,其缺點為僅 能小範圍製作和設備成本昂貴。 綜合以上所述,現有奈米結構圖案之基板的製造方法繁 多,在設計與製作上也不盡相同,因此在預期的效果也不 盡相同。如何獲到一種大面積、低成本、快速及可在任何 基板上製作奈米結構圖案之製造方法,乃為目前半導體光電 業者亟待解決之重要技術問題。 201227822 【發明内容】 本發明係提供-種奈米結構 種方法可以製造出—奈米結構_之、紐。w藉此 下列步 具體實施例’該奈米結構之製造方法 驟·百先,—贿额上_成綠 鍍、熱細騎化學城等長 =鍍、機 半導體、金屬、陶纽高分子_’此基板可為 石钱石夕、玻璃、不銹鋼、pe、PVa等)。録皿貝 洞結=陽===出-具有奈米孔 數(電解液濃度、電解液、、7 =由。周麵極乳化方法之參 間等參_編直_^度〜喻_、陽極氧化時 進-步,陽極氧化過財 硫酸及鹽酸等)進 產生-遮障層,可用-觸_如^化_孔洞底部會 行移除此遮障層。 之後,以一 進行乾式歧式氧化_作為鮮, 表面。 ⑻王將料之圖案轉移至-基板 極氣:二歸-基板上的陽 氏成本.块速及可在任何基材上製作奈米結構圖案之製造方 201227822 法。 關於本發明之優點與精神可以藉由以下的創作詳述及所 附圖式得到進一步的瞭解。 【實施方式】 請-併參見圖-、圖二、圖三、圖四、圖五及圖六。 如圖-所示,本發明之-實施例為該具奈米結構圖案之基 鲁 板6的製造方法包含下列步驟:首先,執行步驟S10,將面 積為2x2 cm2之P财基板i ’放入電子束蒸錄系統之反應腔 (reactor)成長一鋁膜2。 進-步’執行步驟SU,將試片放入鐵氟龍製作之特殊 模具内’該模具使用一銅板作為與基板】背面接觸電極之設 什’並將銅導線拉出f陽極端’該模具設計可讓基板!僅露出 銘膜2正祕觸到電解液。之後絲好基板丨讀具整組放置 在充滿電解液之燒杯中,電解液為草酸(邮2〇4)溶液,並以 _ 電源供給ϋ於基板上的賴與轉液之間杨—偏壓,電解 液端使用石墨棒當陰極;基板lf面骑極,㈣行第一次陽 極氧化處理,處理時間為2至1〇分鐘。該步驟已在賴2上製 ^乍出深度錢之陽極氧化賴3制。由贿孔_部為陽極 氧化賴3組成之遮障層,此遮障層會阻正陽極氧化賴⑽ 孔洞繼續擴大,因此必紐用顧將麟層移除後,再進行 第人陽極氧化處理。第一次陽極氧化處理之步驟條件與第 -人陽極氧化處理綱。第二次陽極氧化處理後之基板1,1 轉2⑽旗有·直麵50 nm左右之陽減化賴3。經 201227822 處,之具有奈_陽極氧化_,其孔 障層完全歸’ ^^陽^此_再㈣魏酬步驟將遮 之遮罩。 "讓%極氧化紹膜3成為具有貫穿孔洞結構201227822 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to a method of manufacturing a nanostructure pattern substrate. In particular, the present invention discloses a method of fabricating a nanostructure pattern on any substrate to obtain a large area, low cost, rapid and processable nanostructure pattern on any substrate. τ''' [Prior Art] In the field of semiconductors and optoelectronic components, high conversion efficiency and high afterglow. Efficiency has always been the goal of components such as solar cells, light-emitting diodes and photodetectors. What is common is the need for a suitable substrate growth component. At present, the substrate for fabricating the nano structure pattern mainly utilizes a conventional yellow light developing process, which is mainly based on the Ray 丨 criterion (Ray 丨 dgh criterion) 'the minimum width that the optical system can distinguish, and is proportional to the wavelength of the light, and In contrast to the numerical aperture (NA), in order to obtain a smaller nanostructure, it is necessary to use a light source with a shorter wavelength to fabricate a substrate having a nanostructure pattern, but the disadvantages are increased cost and improved process difficulty. . Alternatively, an electron beam enthalpy method can be used to fabricate a substrate having a nanostructure pattern, which has the disadvantage of being inexpensive to fabricate and equipment. In summary, the conventional nanostructured substrate has a wide variety of manufacturing methods and is not identical in design and fabrication, and therefore the expected effects are not the same. How to obtain a large-area, low-cost, fast manufacturing method for fabricating nano-structure patterns on any substrate is an important technical problem that needs to be solved urgently by semiconductor optoelectronics. 201227822 SUMMARY OF THE INVENTION The present invention provides a nanostructure method which can produce a nanostructure. w By the following steps, the specific embodiment 'the manufacturing method of the nano structure, the first hundred, the bribe amount _ into the green plating, hot fine riding chemical city, etc. = plating, machine semiconductor, metal, ceramics _ 'This substrate can be stone money, glass, stainless steel, pe, PVa, etc.). Recording dish hole knot = Yang == = out - with nanopore number (electrolyte concentration, electrolyte, 7 = by. The surface of the surface emulsification method of the parameters of the parameters _ straight _ ^ degrees ~ Yu _, In the case of anodization, the step-by-step, anodizing, sulfuric acid, hydrochloric acid, etc.) are introduced into the barrier layer, and the barrier layer can be removed by the bottom of the hole. After that, the dry-type oxidized _ is used as a fresh, surface. (8) Wang transferred the pattern of the material to the substrate. The gas: the second return - the cost of the anode on the substrate. The block speed and the manufacturer of the nanostructure pattern on any substrate. 201227822 Method. The advantages and spirit of the present invention will be further understood from the following detailed description and the accompanying drawings. [Embodiment] Please - see Figure -, Figure 2, Figure 3, Figure 4, Figure 5 and Figure 6. As shown in the figure, the method for manufacturing the base plate 6 having the nano structure pattern includes the following steps: First, step S10 is performed to place the P substrate i' with an area of 2x2 cm2. The reaction chamber of the electron beam vaporization system grows an aluminum film 2. Step-by-step 'Execute step SU, put the test piece into a special mold made of Teflon'. The mold uses a copper plate as the substrate to contact the back surface of the electrode and pull the copper wire out of the f-anode end' Designed to allow the substrate! Only the exposed film 2 is exposed to the electrolyte. After that, the substrate is placed in a beaker filled with electrolyte, and the electrolyte is an oxalic acid (Post 2〇4) solution, and the _ power is supplied to the substrate and the liquid is biased between the liquid and the liquid. The electrolyte end uses a graphite rod as the cathode; the substrate lf faces the pole, and (4) the first anodizing treatment, and the treatment time is 2 to 1 minute. This step has been made on the Lai 2 to produce the anodized Lai 3 system. The barrier layer composed of the anodic oxide layer 3 is blocked by the brittle hole _ part, and the barrier layer will block the positive anodic oxidation (10), and the hole will continue to expand. Therefore, the nucleus layer is removed, and then the first person is anodized. . The first anodizing treatment step conditions and the first-man anodizing treatment. After the second anodizing treatment, the substrate 1 , 1 turns 2 (10) flag has a straight surface of about 50 nm of yang reduction. After 201227822, it has a negative anodic oxidation _, and its pore barrier layer is completely returned to the ^ ^ ^ 阳 ^ this _ then (four) Wei reward step will cover the mask. "Let the % polar oxide film 3 have a through-hole structure

Jll S12 j 1 刻f程,將衫叙雜離子射“瓶應㈣,進行蝕 …2疋使用氣體為印/〇2,_時間為約3至5分鐘。 陽極氧似=步驟S13 ’將秒基板1放入鱗酸溶液中去除 氧化_ ’域式電雜刻移除錄板1表面的陽極 乳化铭膜3麵,製作成表面直徑約% 圖案的石夕基板,如圖六。 石之不水、、。構 上述之實施例僅為例示性說明本發明之特點及 而非用於限制本發明之實質技術内容的範圍。任何熟 白此技藝之人士均可在不違背本發明之精神及範舞下,對 ^=^多飾與變化。因此’本發明之權利保護範 圍應女後述之申請專利範圍所列。 【圖式簡單說明】 圖-係根據本翻之—具财施狀奈紐構 造方法。 圖二係根據本發明之—具體實侧U分的方塊圖。 圖三係根據本發明之—具體實施例之第二部分的方塊圖。 圖四係根據本發明之—具體實施例之第三部分的方塊圖。 201227822 圖五係根據本發明之一具體實施例之第四部分的方塊圖。 圖六係根據本發明之一具體實施例之奈米結構圖案基板的 電子顯微鏡圖。Jll S12 j 1 engraved f, the shirt will be mixed with the ion "the bottle should be (four), carry out the eclipse... 2 疋 use gas for the printing / 〇 2, _ time is about 3 to 5 minutes. Anode oxygen like = step S13 'to the second The substrate 1 is placed in a scaly acid solution to remove oxidation _ 'Domain type electric etch to remove the surface of the anode emulsified film 3 on the surface of the recording board 1 to form a stone etch substrate having a surface diameter of about %, as shown in Fig. 6. The above-described embodiments are merely illustrative of the features of the present invention and are not intended to limit the scope of the technical scope of the present invention. Any person skilled in the art can do without departing from the spirit of the present invention. Under the fan dance, there are many decorations and changes to ^=^. Therefore, the scope of protection of the invention should be listed in the patent application scope described later by the woman. [Simple description of the diagram] The figure-based is based on this Figure 2 is a block diagram of a second portion of a specific embodiment in accordance with the present invention. Figure 4 is a block diagram of a second portion of a specific embodiment in accordance with the present invention. The block diagram of the third part of the example. 201227822 Figure 5 is based on this The fourth embodiment of a block diagram of one particular embodiment Ming. Figure VI of the present invention, according to one embodiment of the electron microscope of FIG nano structure patterned substrate specific embodiments.

【主要元件符號說明】 S10〜S13 流程步驟 4 奈米結構 1 基板 5 #刻材料 2 鋁膜 6 具奈米結構圖案基板 3 陽極氧化鋁膜[Main component symbol description] S10~S13 Flow step 4 Nanostructure 1 Substrate 5 #刻材料 2 Aluminium film 6 Nano structure pattern substrate 3 Anodic aluminum oxide film

77

Claims (1)

201227822 七、申請專利範圍: 1·一種奈米結構圖案基板之製造方法,其步驟包括: ()使用基板,於該基板上利用一成長叙膜長 膜; (2)使用=極氧化方法,將該顧製作成—具有奈米孔洞結 構之陽極氧化麵’並可藉由滅該陽極氧化方法調整 孔洞直徑與深度大小; )、/、有不米孔/同之&極氧化銘膜為遮罩,進行餘刻製 知將-遮罩之圖案轉移至一基板表面;以及 (4)移除陽極氧化域料,製作成—具有奈雜構圖案之 基板。 L如請專利範圍第〗項之所述之奈米結構圖案基板之製造方 法,更包括在陽極氧化過程後孔㈣會產生陽極氧化铭膜所 、且成之遮卩早層,須利用一飯刻物質進行移除。 1如申請專利範圍第i項之所述之奈米結構圖案基板之製造方 法’更包括娜陽極氧化方法的參數為魏液濃度、電解液 /Jm度^極氧化偏壓、及陽極氧化時間。 4‘如申4專利範圍第1項所述之奈米結構®案基板之製造方 法,其中該基板可為半導體、金屬、陶瓷及高分子等基 板0 5. 如申請專利範圍第2所述之奈米結構圖案基板之製造方法, 其中該半導體、金屬或陶瓷基板可為矽、砷化鎵、藍寶 石、碳化矽、玻璃、不銹鋼、PE、PVA等材料。 6. 如申請專利範圍第1項所述之奈米結構圖案基板之製造方 201227822 法,其中該成長鋁膜方法 及化學沈鮮方法。了騎子束續、麟、熱蒸鑛 7·Γ 範圍第1項之所述之奈米結構_基板之製造方 二’八極氧化方法為—次或複數次以上。 粑11第2項之所述之奈米結構圖案基板之製造方法, 其中該I虫刻物質為磷酸、鹽酸及硫酸。 9^申請專利範圍第1項之所述之奈米結構圖案基板之製造方 =1該遮罩圖案轉移使用之_技術可為乾式餘刻或 1〇甘如申請專利範圍第1項之奈米結構圖案基板之製造方法, 1中該移輯極氧化娜鮮转可為乾式或溼式餘刻方201227822 VII. Patent application scope: 1. A method for manufacturing a nanostructure pattern substrate, the steps comprising: () using a substrate on which a long film is grown; (2) using a polar oxidation method, The film is made into an anodized surface having a nanoporous structure and the diameter and depth of the pore can be adjusted by extinguishing the anodizing method; ), /, there is a non-porous pore / the same & The cover is etched to transfer the pattern of the mask to a surface of the substrate; and (4) the anodized material is removed to form a substrate having a nano-pattern. L. The method for manufacturing a nanostructure pattern substrate as described in the scope of the patent scope includes, after the anodization process, the hole (4) generates an anodized film and forms an early layer of concealer, and a rice must be utilized. The material is removed for removal. 1 The method for producing a nanostructure pattern substrate as described in the scope of the patent application, wherein the parameters of the anodizing method are the Wei liquid concentration, the electrolyte/Jm degree, the extreme oxidation bias, and the anodization time. The method for manufacturing a substrate of the nanostructures according to the first aspect of the invention, wherein the substrate can be a substrate such as a semiconductor, a metal, a ceramic or a polymer. The method for manufacturing a nanostructure pattern substrate, wherein the semiconductor, metal or ceramic substrate can be a material such as germanium, gallium arsenide, sapphire, tantalum carbide, glass, stainless steel, PE, PVA or the like. 6. The method of manufacturing a nanostructure pattern substrate according to claim 1, wherein the method for growing a film and the method for chemically immersing the method. The rider bundle continuation, the lining, the hot steaming ore 7·Γ The nanostructure described in the first item of the range _ substrate manufacturing method The two octapole oxidation method is one or more times. The method for producing a nanostructure pattern substrate according to Item 2, wherein the I insect engraving material is phosphoric acid, hydrochloric acid or sulfuric acid. 9^ The manufacturer of the nanostructure pattern substrate described in the first application of the patent scope 1 = the mask pattern transfer used _ technology can be a dry type of engraving or a sample of the patent of the first item of the patent range The method for manufacturing a structural pattern substrate, wherein the shifting of the oxidized nano fresh turn can be a dry or wet residual engraving
TW99145672A 2010-12-24 2010-12-24 Method for manufacturing nano-structure patterned substrate TW201227822A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI588037B (en) * 2015-07-17 2017-06-21 國立成功大學 Method for forming photorealistic figures by dye-free and one-time anodic-aluminum oxidizing process and substrate comprising such figure made therefrom

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI588037B (en) * 2015-07-17 2017-06-21 國立成功大學 Method for forming photorealistic figures by dye-free and one-time anodic-aluminum oxidizing process and substrate comprising such figure made therefrom

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