201145372 六、發明說明： 【發明所屬之技術領域】 本發明係關於附黏著膜之電子零件的製造方法及構裝 體的製造方法。 【先前技術】 近年來’已實行將形成有複數個半導體裝置於其上之 晶圓分割成個別的半導體裝置，然後將單片化之半導體裳 置構裝於配線基板上之方法（❹，參照專利文又， 已知有-種使用具有塑膠膜與黏著組成物之黏著薄板材， 將半導體晶片構裝於電路基板上之方法（例如，參照專利文 獻2)。 專利文獻1 :日本特開2000 — 021915號公報。 專利文獻2:日本特開2〇〇7— 211246號公報。 【發明内容】 [發明所欲解決之問題] 若在將黏著組成物維持黏貼於晶圓上的狀態下，對晶 圓進行为割，則於分割晶圓成各個半導體晶片時所產生之 切削屑等，容易附著於黏著組成物上。又，若在將塑膠膜 和黏著組成物維持黏貼於晶圓上的狀態下，對晶圓進行分 則塑膠膜谷易自黏著組成物剥離。在本發明之一態樣 中，其目的在於提供一種能夠解決上述問題之附黏著臈之 201145372 申電法及構裝體的製造方法。此目的係根據 圍：的獨立項所記載之特徵的組合而達成。 項規疋本發明之更有利具體例。 [用於解決問題之手段】 附黏上述問題，本發明之第-態樣中，提供-種 附黏者臈之電子裳杜 將由基材與黏著層積層：&其具備.黏貼階段，其 件之晶圓的表面上黏著膜㈣於形成有電子零 反射ϋΘ 〜ρ&奴，其藉由接收在晶圓的表面 =Γ材和黏著層後之光’對晶圓的表面影像進 = ::!位置決定階段’其基於影像，決定分割晶圓 階段’其分割晶圓’來將電子零件單片 彈J = ”，黏貼階段’具有利用被保持於魔頭上之 彈性體來將料膜朝向晶圓表面推壓之階段即可。 法中’基材與黏著層之間之剝離力為〇.17N/5cm以上即 二上二方法中，基材的厚度為75…上即可。上述方 者模的對於波長在44Gnm〜·nm之 74%以上即可。 处耵手為 上述方法中’於攝影階段前’可更具備背面磨削階段， 其對表面上黏貼有黏著膜之晶圓的背面進行磨肖: 法中’背面磨削階段，可具有對用來保護基材之 被黏貼^基材上之晶圓㈣面進行磨削之階段。上述= 中，黏著層可含有NCF或ACF。 、 201145372 1本發明之第二態樣中，提供一種構裝體的製造方法， ”八備到離階段，其將基材自根據上述方法所製造出之 豸著膜之電子零件的黏著層上剝離；黏著階段，其使用 毒著層冑基材已剝離之附黏著層之電子零件黏著於基板 的表面。 上述方法中，黏貼階段，可具有推壓階段，其利用保 持於塵頭之彈性體’來將附黏著層之電子零件朝向基板表 面推塵。上述方法中，推㈣段，具有利用彈性體來將複 上述附點著層之電子零件同時地朝向基板表面推麼之 階段即可。 上述方法中’分割階段，可具有在晶圓的背面黏貼有 切割膠帶之狀態下分割晶圓之階段；剝離階段，可且有在 維持複數個附黏著膜之電子零件被黏點於切割膠帶上之狀 態下，將基材自複數個附黏著膜之電子零件卡的各個黏著 層剝離之階段。卜j古、土 士 . 中，在剝離階段後，可更具備選. 別階段’其確認基材是否已從㈣著膜之電子零件的點著 層剝離’而進行選別，·黏著階段，可具有❹黏著層將被 確_基材已㈣之附黏著層之電子零件黏著於基板 面之階段。 201145372 【實施方式】 以下’透過發明之實施形態來說明本發明，但以下之 實施形態並非對申請專利範圍之發明作出限定。又，實施 形態中所說明之特徵的所有組合，並不一定均為發明之解 決手段所必需。 以下，參照圖式對實施形態進行說明’在圖式的記載 中，有時會對相同或類似之部分標示相同之參考編號，並 省略重複之說明。此外’圖式僅為概略之圖，厚度與平面 尺寸之關係、比例等’可能與實際不同。又，為了便於說 明，圖式之間也可能含有彼此之尺寸關係或比例不同之部 分。 第1圖係概略地表示構裝體1 00的剖面的一例。構裝 體100’具備：電路基板110、晶片120及黏著層13〇β構 裝體1 00，係將晶片1 20構裝於電路基板丨i 〇上而得到。 構裝體100，可具備複數個（二個以上）晶片12〇。複數個晶 片120’可在同一步驟中被構裝於電路基板11〇上。 電路基板110，在構裝有晶片12〇之側的表面上，具 有電極114。作為電路基板11〇，可舉出印刷電路板、多層 配線基板、可撓性基板等例子。電路基板11〇可為基板之 一例。 日b片120，具有元件122與凸塊124。晶片120，可為 電子零件之一例。凸塊124,係被電性連接於電路基板ιι〇 的電極114,並電性連接元件122與電路基板11〇〇 201145372 元件122，可為主動元件，亦可為被動元件❶作為主 動元件’可舉出：MISFET、HBT、HEMT等半導體元件； 1C、LSI等積體電路元件；半導體雷射、發光二極體、發 光閘流體等發光元件；光感測器、受光二極體等受光元件； 或者太陽能電池等例子。作為被動元件，可舉出電阻器、 電容器、電感器等例子。元件122，可為電子零件之一例。 黏著層130’係黏著電路基板11〇與晶片12〇。黏著層 130’例如可使含有熱硬化性樹脂之組成物熱硬化而得到。 在此使用第2圖至第10圖來說明將晶片12〇構裝於電路基 板11 0上之方法之一例。 第2圖係概略地表示晶圓2〇〇的一例。本實施形態中， 首先準備晶圓200。作為晶圓200，可舉出矽晶圓等半導體 晶圓之例。在晶圓200的表面上，可形成有複數個元件 122»在晶圓200的表面上，可形成有格子狀之切割道 hne)202。複數個元件122甲的各元件，形成於根據切割道 加而劃分出之複數個領域的各領域中即可。在晶圓· 的形成有元件122之面(有時稱為功能面)上，形成有凸塊 124即可。晶圓200 ’可藉由背面研磨裝置等來磨削與功能 面為相反側之面（有時稱為# &、 1 稱马责面）。藉此，能夠削薄晶圓200 的厚度。 第3圖係概略地表示將晶圓200點著於治具300上 階段中的剖面圖之一例。本實施形態中，將準備好之晶 200固定於治具则上。治具遍，可具備圓環狀或方 狀之外框302,其具有比晶圓2〇〇的直徑更大之直徑； 201145372 切割膠帶（dicing tape)304 ,在其中一表面上具有黏著性。 切割膠帶304，可黏貼於外μ 3G2的其中_表面上，且展 開於外框302的内側。晶圓200，可被黏貼於治具3〇〇的 中央。Ρ。晶圓200 ’其功能面之相反側表面可被黏貼於切 割膠帶304上。 切割膠帶304，可為剝離力會藉由照射紫外線而減弱 之黏著膜。藉此，在將晶圓2〇〇分割成複數個晶片後，藉 由對切割膠帶304照射紫外線，可易於在拾取各個晶片時 將晶片自切割膠帶304分離。 第4圖係概略地表示將黏著膜4〇〇黏貼於晶圓2〇〇上 之階段中的剖面圖之一例。本實施形態中，首先在晶圓2〇〇 的功能面上，配置由基材4〇2與黏著層4〇4積層而成之黏 著膜400。 基材402 ’在將黏著膜4〇〇捲成捲軸狀之情況下，可 防止黏著層404彼此黏住。基材4〇2，當使用分割裝置等 來分割晶圓200時’抑制切削屑等附著於黏著層4〇4上。 作為基材402，可舉出聚酯薄膜、聚對苯二曱酸乙二酯薄 膜等塑膠材料，或者上質紙（w〇〇d free paper)、玻璃紙等紙 類之例子。基材402，可於其表面施加石夕.酮處理等之脫模 處理。 基材402 ’使可視光透射即可。藉此，即使於使用便 宜的光學鏡片系統之情況中，亦能夠在將基材4〇2和黏著 層404黏貼於晶圓2〇〇上之狀態下，對晶圓2〇〇的表面之 影像進行攝影。也就是說，即使不使用如紅外線（IR)相機 201145372 等高價光學鏡片系統’亦能夠對形成於晶圓200的功能面 上之元件122、切割線202、凸塊1 24、對準標誌等之影像 進行攝影。 基材402 ’吸收可視光中具有特定波長之光即可。基 材402，也可吸收波長在4〇〇nm以上700nm以下之光中具 有特定波長之光。在此情況下，若對晶圓2〇〇的表面的可 視光影像進行攝影，則該可視光影像中基材4〇2所存在之 領域看起來會被著色。 藉此，能夠基於對晶圓200的表面進行攝影而得之可 視光影像，來判別基材402之有無◦即使在基材4〇2會吸 收具有特疋波長之光之情況下，在基材4〇2可使可視光中 八有上述特疋波長之光以外之光充分地透射之情況下，亦 能夠於基材402所存在之領域中判別晶圓2〇〇的表面的圖 案。 例如’在將晶圓200分割成複數個晶片丨2〇之步驟途 中基材402自黏著層404剝離之情況中，有切削屑附著 於黏著層404之可能。在這種情況下，較佳為將基材4〇2 剝離後之晶片120判斷為不良品。因此，可在實施過分割 圓200之步驟後，對晶圓2〇〇的表面之可視光影像進行 攝如，以判斷基材4〇2之有無。藉此，對於受到切削屑污 染後之晶片120被構裝的情況，能夠加以抑制。 又，基材402,係在構裝步驟前自黏著層4〇4剝離。 然而’若在維持基材術未剝離之狀態下實施構裝步驟， 會有在構裝體100上發生不良情況(缺陷)之可能。因此， 201145372 可在實施過剝離基材402之步驟後，對晶w 2〇〇的表面之 可見光影像進行攝影’以判斷基材4〇2之有無。藉此，對 ，在維持基材4〇2未剝離之狀態下實施構裝步驟之情形， 能夠加以抑制。 土材402的厚度，在…爪以上即可。在基材術的 厚度未滿75心之情況中，有時基材術會在使用切割裝 置等分割晶圓200之步驟途中自黏著層4〇4剝離與基材 4〇2的厚度在75…上之情況相比，加工性較差。基材 術的厚度，在125心以下即可。若基材術的厚度超過 則當塗佈黏著層4〇4於基材4〇2之上以製造黏著 膜4〇0時’會不易將黏著層404塗佈於基材402之上。 黏著層404，+有膜形成樹脂、液狀硬化成分及硬化 劑即可。黏著層404,也可含有各種橡膠成分、柔軟劑、 各種填充劑類等之添加劑，亦可更包含導電性粒子。黏著 層404，亦可為卿（‘㈣心㈤此⑽⑽非粒子 導電膜）、ACF(Anisotr〇pic — Fnm，異方性導電 膜）、或這兩者積層而成之膜。 作為膜形成樹脂’可舉出苯氧基樹脂、聚脂樹脂、聚 醯胺樹脂、聚醯亞胺樹脂之例子。由材料之取得容易度及 連接可靠性之觀點來看’較佳為含有苯氧基樹κ乍為液 狀硬化成分’可舉出液狀環氧樹脂、丙烯酸醋之例子。由 連接可靠性及硬化物的安定性之觀點來看，較佳為具有2 個以上之宫能基。作為硬化劑’在液狀硬化成分為液狀環 氧接m之情況下，可舉出味唾、胺類、疏鹽、鏽鹽、齡類 201145372 之例子。在液狀硬化成分為丙烯酸酯之情況下，作為硬化 劑可舉出有機過氧化物之例子。 基材402與黏著層404之間之剝離力，0.17N/5cm以 上即可。此處，所謂基材402與黏著層404之間之剝離力， 係表示基於JIS(日本工業標準）Z023 7號規格，在180度方 向上作T型剝離時之剝離力。在基材402與黏著層404之 間之剝離力未滿〇.l7N/5cm之情況下，有時基材402會在 使用切割裝置等來分割晶圓200之步驟途中自黏著層404 剝離’與基材402與黏著層404之間之剝離力在〇.17N/5cm 以上之情況相比’加工性較差。 基材402與黏著層404之間之剝離力，小於與第3圖 相關而說明過的，在黏著晶圓2〇〇於治具3〇〇上之階段中 的晶圓200與切割膠帶3〇4間之剝離力即可。基材4〇2與 黏著層404之間之剝離力，小於經紫外線之照射等而使剝 離力減弱前之階段中的晶圓200與切割膠帶304間之剝離 力即可。 基材402，其基材402的厚度在75jczm以上，且基材 402與黏著層4〇4之間之剝離力在〇趟/5咖以上即可。 藉此，能夠得到一種黏著膜4〇〇，其在使用切割裝置等分 割晶圓200之步驟中的加工性優良。 黏著膜400，對於波長44〇nm以上7〇〇nm以下之光之 透射率在74%以上即可。上述光之透射率，能夠藉由基材 402或者黏著| 4〇4的材質、厚度、表面處理等來調整。 上述光之透射率’能夠藉由添加於基材402或者黏著層4〇4 201145372 之添加劑的種類或者添加量來調整。例如，能夠藉由在黏 著層404中添加無機填充劑，使黏著層4〇4的光透射率降 低。 此處，所謂對於波長440nm以上7〇〇nm以下之光之透 射率在74%以上，係表示對於波長44〇nm以上7〇〇nm以下 之光之透射率之最大值在74%以上。上述光之透射率，係 因黏著層400的厚度而異。因此，所謂上述光之透射率， 係表示黏貼於晶圓200上之狀態中之黏著膜4〇〇的厚度下 之上述光之透射率。黏著膜4〇〇，亦可對於波長44〇nm以 上700nm以下之全範圍中的光之透射率均在74%以上。 接著，使用推壓裝置410 ,將黏著膜4〇〇黏貼於晶圓 2〇〇上。推壓裝置410,具備底座42〇與壓頭43〇即可。底 座420 ’可載置晶圓200。晶圓.200，維持著保持於治具3〇〇 上之狀態而被載置於底座420即可。底座42〇，具有加熱 裝置422即可。此外，在將黏著膜4〇〇黏貼於晶圓2〇〇上 之階段中’亦可不使用加熱裝置422。 壓頭430,具有推壓構件432與保持推壓構件432之 保持部434。壓頭430,將推壓構件432朝向底座42〇側推 壓推壓構件4 3 2為彈性體即可。彈性體為石夕鲷橡膠等之 合成橡膠即可。藉此，與金屬製之推壓構件相比，更能夠 均勻地將黏著膜4 0 0黏附於晶圓2 〇 〇上。 推壓裝置410，將表面上配置著黏著膜4〇〇之晶圓 2〇〇,失持在底座420與壓頭430之間來進行推壓。本實施 形態中，首先，在底.座420上面載置已保持於治具3〇〇上 12 201145372 之晶圓2 0 0。接著，以保持於壓瓸4 7 n !碩430上之推壓構件432， 朝向晶圓200的功能面推壓黏荖趂4 — 邾者膜40〇。错此，能夠將黏 著膜400黏貼於晶圓200上。 此外’本實施形態中，對於使用推壓裝置4ig來將黏 400黏貼於晶Η 200上之情況進行了說明。然而，將 著膜 黏著膜400黏貼於晶圓200上之方法並不限於此。例如， 亦可使用滾筒式貼合機來將黏著膜伽黏貼於晶圓2〇〇上。 第5圖係概略地表示將晶圓鳩載置於切割裝置別 的夾頭工作台520上之階段的—例。本實施形態令首先， 將黏貼有黏著膜4G0之晶圓2⑽，載置於切割裝置51〇的 夾頭工作台520上。晶圓20〇，在保持於治具3〇〇上之狀 態下’被載置於夾頭工作台520上即可。 第5圖係概略地表示切割裝置51()的剖面的—例。切 割裝置510，例如沿著切割道2〇2來分割晶圓2〇〇。藉此， 能夠將晶目200單片化而成為複數個晶片12〇。切割裝置 5 1 〇可為分割晶圓之分割裝置的一例。晶冑，在保持 於治具300上之狀態下被分.卩200 膜 400黏貼於其表面上之狀態下被分割即可。 切。丨裝置510，可具備：夾頭工作台52〇、對準平台 夾頭工作台 夾頭工作台 53〇、攝影部540、切削部550及控制部56〇 520，能夠載置正保持著晶圓2〇〇之治具3〇〇 520 ’可藉由未圖示出之減壓裝置來吸引治具300,而將治 具3 00固定於夾頭工作台52〇上。 對準平台530，基於控制部56〇的指示，使夾頭工作 13 201145372BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing an electronic component with an adhesive film and a method of manufacturing the same. [Prior Art] In recent years, a method has been practiced in which a wafer on which a plurality of semiconductor devices are formed is divided into individual semiconductor devices, and then a singulated semiconductor device is mounted on a wiring substrate (❹, 参照Further, a method of attaching a semiconductor wafer to a circuit board using an adhesive thin plate having a plastic film and an adhesive composition is known (for example, refer to Patent Document 2). Patent Document 1: Japanese Special Open 2000 Japanese Patent Publication No. 2-7-211246. SUMMARY OF THE INVENTION [Problems to be Solved by the Invention] If the adhesive composition is kept adhered to the wafer, When the wafer is cut, the chips generated when the wafer is divided into individual semiconductor wafers are easily attached to the adhesive composition, and the plastic film and the adhesive composition are adhered to the wafer while being held on the wafer. In order to separate the wafer, the plastic film is easily peeled off from the adhesive composition. In one aspect of the invention, the object is to provide an adhesive tape capable of solving the above problems. 01145372 The application method and the method for manufacturing the structure. This object is achieved according to the combination of the features described in the independent item of the circumference: The item is a more advantageous specific example of the invention. [Means for solving the problem] In order to adhere to the above problems, in the first aspect of the present invention, an electron-carrying layer of an adhesive layer is provided by a substrate and an adhesive layer: & it has a bonding stage, and a film is adhered on the surface of the wafer. (d) in the formation of an electronic zero-reflection 〜 ~ρ& slave, which receives the light on the surface of the wafer = the coffin and the adhesive layer 'the surface image of the wafer = ::! position determination stage' based on the image Deciding to split the wafer stage 'the split wafer' to make the electronic part single-chip J = ", and the pasting stage" has the stage of using the elastomer held on the magic head to push the film toward the wafer surface. In the method, the peeling force between the substrate and the adhesive layer is 〇.17N/5cm or more, that is, in the second two methods, the thickness of the substrate is 75... The wavelength of the above-mentioned square is 44Gnm~· More than 74% of nm can be used. Before the photography stage, it can be further equipped with a back grinding stage, which polishes the back surface of the wafer with the adhesive film adhered on the surface: In the 'back grinding stage, the film can be used to protect the substrate. The surface of the wafer (four) on the substrate is ground. In the above =, the adhesive layer may contain NCF or ACF. 201145372 1 In a second aspect of the invention, a method for manufacturing a package is provided, At the off-stage, the substrate is peeled off from the adhesive layer of the electronic component of the film which is manufactured according to the above method; in the adhesive stage, the electronic component of the adhesive layer which has been peeled off by the poison layer is adhered to In the above method, the bonding stage may have a pressing stage in which the electronic component attached to the dusting layer is used to push the electronic component of the adhesive layer toward the surface of the substrate. In the above method, the push (four) segment may have a stage in which the electronic component of the above-mentioned layered layer is simultaneously pushed toward the substrate surface by an elastic body. In the above method, the 'segmentation stage may have a stage of dividing the wafer in a state where the dicing tape is adhered to the back side of the wafer; and in the stripping stage, the electronic parts holding the plurality of adhesive films may be adhered to the dicing tape. In this state, the substrate is peeled off from the respective adhesive layers of the plurality of electronic component cards with the adhesive film. In the case of Bu J Gu, Tu Shi. In the stripping stage, it can be more optional. In the other stage, it confirms whether the substrate has been stripped from the (4) layered electronic parts of the film, and the adhesion stage can be The adhesive layer having the adhesive layer will be adhered to the stage where the electronic component of the adhesive layer of the substrate (4) is adhered to the substrate surface. [Embodiment] The present invention will be described below by way of embodiments of the invention, but the following embodiments are not intended to limit the invention. Moreover, all combinations of the features described in the embodiments are not necessarily required to be a means of the invention. In the following description, the same or similar components will be denoted by the same reference numerals, and the description will be omitted. Further, the 'pattern is only a rough view, and the relationship between the thickness and the plane size, the ratio, etc.' may be different from the actual one. Further, for convenience of explanation, the drawings may also contain portions having different dimensional relationships or ratios from each other. Fig. 1 is a view schematically showing an example of a cross section of the package body 100. The package body 100' includes a circuit board 110, a wafer 120, and an adhesive layer 13〇β structure 00, which are obtained by arranging the wafer 1200 on a circuit board 丨i 〇. The package 100 may include a plurality of (two or more) wafers 12A. A plurality of wafers 120' can be mounted on the circuit substrate 11 in the same step. The circuit substrate 110 has an electrode 114 on the surface on the side on which the wafer 12 is mounted. Examples of the circuit board 11A include a printed circuit board, a multilayer wiring board, and a flexible board. The circuit board 11A can be an example of a substrate. The day b piece 120 has an element 122 and a bump 124. The wafer 120 can be an example of an electronic component. The bump 124 is electrically connected to the electrode 114 of the circuit substrate, and is electrically connected to the component 122 and the circuit board 11〇〇201145372. The component 122 can be an active component or a passive component. Examples thereof include semiconductor elements such as MISFET, HBT, and HEMT; integrated circuit elements such as 1C and LSI; light-emitting elements such as semiconductor lasers, light-emitting diodes, and light-emitting thyristors; and light-receiving elements such as photosensors and light-receiving diodes; Or examples of solar cells. Examples of the passive element include a resistor, a capacitor, and an inductor. Element 122 can be an example of an electronic component. The adhesive layer 130' adheres to the circuit substrate 11A and the wafer 12A. The adhesive layer 130' can be obtained, for example, by thermally curing a composition containing a thermosetting resin. Here, an example of a method of mounting the wafer 12 on the circuit board 110 will be described using Figs. 2 to 10 . Fig. 2 schematically shows an example of the wafer 2〇〇. In the present embodiment, the wafer 200 is first prepared. Examples of the wafer 200 include semiconductor wafers such as germanium wafers. On the surface of the wafer 200, a plurality of elements 122» can be formed on the surface of the wafer 200, and a lattice-shaped dicing street hne) 202 can be formed. Each of the plurality of elements 122 may be formed in each of a plurality of fields divided by the scribe lines. The bump 124 may be formed on the surface of the wafer on which the element 122 is formed (sometimes referred to as a functional surface). The wafer 200' can be ground to the opposite side of the functional surface by a back grinding device or the like (sometimes referred to as #&, 1 is called a horse face). Thereby, the thickness of the wafer 200 can be thinned. Fig. 3 is a view schematically showing an example of a cross-sectional view in which the wafer 200 is spotted on the jig 300. In the present embodiment, the prepared crystal 200 is fixed to the jig. The jig may have an annular or square outer frame 302 having a diameter larger than the diameter of the wafer 2; 201145372 dicing tape 304 having adhesiveness on one of the surfaces. The dicing tape 304 is adhered to the inner surface of the outer μ 3G 2 and spreads on the inner side of the outer frame 302. The wafer 200 can be adhered to the center of the jig 3〇〇. Hey. The opposite side surface of the functional surface of the wafer 200' can be adhered to the cutting tape 304. The dicing tape 304 is an adhesive film in which the peeling force is weakened by irradiation of ultraviolet rays. Thereby, after the wafer 2 is divided into a plurality of wafers, by irradiating the dicing tape 304 with ultraviolet rays, the wafer can be easily separated from the dicing tape 304 at the time of picking up the respective wafers. Fig. 4 is a view schematically showing an example of a cross-sectional view in which the adhesive film 4 is adhered to the wafer 2 . In the present embodiment, first, an adhesive film 400 formed by laminating a substrate 4〇2 and an adhesive layer 4〇4 is disposed on a functional surface of the wafer 2A. The substrate 402' can prevent the adhesive layers 404 from sticking to each other in the case where the adhesive film 4 is wound into a roll shape. When the substrate 200 is divided by a dividing device or the like, the substrate 4 is prevented from adhering to the adhesive layer 4 to 4 by cutting chips or the like. Examples of the substrate 402 include plastic materials such as a polyester film and a polyethylene terephthalate film, and examples of paper such as a paper or a cellophane. The substrate 402 may be subjected to a release treatment such as a treatment with a scouring agent or the like on the surface thereof. The substrate 402' transmits visible light. Thereby, even in the case of using an inexpensive optical lens system, the image of the surface of the wafer 2 can be imaged while the substrate 4〇2 and the adhesive layer 404 are adhered to the wafer 2〇〇. Take photography. That is, the component 122, the dicing line 202, the bumps 14, 24, the alignment marks, and the like formed on the functional surface of the wafer 200 can be formed without using a high-priced optical lens system such as an infrared (IR) camera 201145372. The image is taken. The substrate 402' absorbs light having a specific wavelength in visible light. The substrate 402 can also absorb light having a specific wavelength among light having a wavelength of 4 〇〇 nm or more and 700 nm or less. In this case, if the visible light image on the surface of the wafer 2 is photographed, the field in which the substrate 4〇2 exists in the visible light image appears to be colored. Thereby, it is possible to determine the presence or absence of the substrate 402 based on the visible light image obtained by photographing the surface of the wafer 200, even in the case where the substrate 4〇2 absorbs light having a characteristic wavelength, in the substrate. In the case where the light other than the light having the above-mentioned characteristic wavelength is sufficiently transmitted in the visible light, the pattern of the surface of the wafer 2 can be discriminated in the field in which the substrate 402 exists. For example, in the case where the substrate 402 is peeled off from the adhesive layer 404 in the step of dividing the wafer 200 into a plurality of wafers 丨2, there is a possibility that the chips adhere to the adhesive layer 404. In this case, it is preferable that the wafer 120 after the base material 4〇2 is peeled off is judged to be defective. Therefore, after the step of dividing the circle 200 is performed, the visible light image of the surface of the wafer 2 can be photographed to determine the presence or absence of the substrate 4〇2. Thereby, the case where the wafer 120 contaminated by the chips is mounted can be suppressed. Further, the substrate 402 is peeled off from the adhesive layer 4〇4 before the coating step. However, if the constitutional step is carried out while the substrate is not peeled off, there is a possibility that a defect (defect) occurs in the package 100. Therefore, 201145372 can photograph the visible light image of the surface of the crystal w 2 后 after the step of peeling off the substrate 402 to determine the presence or absence of the substrate 4〇2. Thereby, the case where the constitutional step is carried out while maintaining the substrate 4〇2 not peeled off can be suppressed. The thickness of the soil material 402 can be above the claws. In the case where the thickness of the substrate is less than 75 hearts, sometimes the substrate is peeled off from the adhesive layer 4〇4 and the thickness of the substrate 4〇2 is 75 in the process of dividing the wafer 200 using a cutting device or the like... Compared with the above situation, the processability is poor. The thickness of the substrate can be less than 125 hearts. If the thickness of the substrate is exceeded, the adhesive layer 404 is not easily applied to the substrate 402 when the adhesive layer 4 is applied over the substrate 4〇2 to form the adhesive film 4〇0. The adhesive layer 404, + may have a film forming resin, a liquid hardening component, and a curing agent. The adhesive layer 404 may contain various additives such as a rubber component, a softener, various fillers, and may further contain conductive particles. The adhesive layer 404 may also be a film formed by laminating ('(four) core (5) (10) (10) non-particle conductive film), ACF (Anisotr〇pic - Fnm, anisotropic conductive film), or both. Examples of the film-forming resin' include a phenoxy resin, a polyester resin, a polyamide resin, and a polyimide resin. From the viewpoint of easiness of material acquisition and connection reliability, 'preferably phenoxy κ 乍 is a liquid-like hardening component', and examples of the liquid epoxy resin and acryl vinegar are exemplified. From the viewpoint of connection reliability and stability of the cured product, it is preferred to have two or more uterine energy groups. As the curing agent, in the case where the liquid hardening component is liquid oxy-epoxy, m is exemplified by taste saliva, amines, salt-dissolving salts, rust salts, and ages 201145372. In the case where the liquid hardening component is an acrylate, an example of the organic peroxide is exemplified as the curing agent. The peeling force between the substrate 402 and the adhesive layer 404 may be 0.17 N/5 cm or more. Here, the peeling force between the base material 402 and the adhesive layer 404 is a peeling force when the T-type peeling is performed in the 180-degree direction based on the JIS (Japanese Industrial Standard) Z023 No. 7 specification. When the peeling force between the substrate 402 and the adhesive layer 404 is less than 1.7 N/5 cm, the substrate 402 may be peeled off from the adhesive layer 404 during the step of dividing the wafer 200 using a dicing device or the like. When the peeling force between the substrate 402 and the adhesive layer 404 is 〇.17 N/5 cm or more, the workability is inferior. The peeling force between the substrate 402 and the adhesive layer 404 is smaller than that of the wafer 200 and the dicing tape 3 in the stage of attaching the wafer 2 to the jig 3, as described in connection with FIG. The peeling force of 4 can be. The peeling force between the substrate 4〇2 and the adhesive layer 404 may be smaller than the peeling force between the wafer 200 and the dicing tape 304 in the stage before the peeling force is weakened by irradiation with ultraviolet rays or the like. In the substrate 402, the thickness of the substrate 402 is 75 jczm or more, and the peeling force between the substrate 402 and the adhesive layer 4〇4 may be 〇趟/5 coffee or more. Thereby, it is possible to obtain an adhesive film 4 which is excellent in workability in the step of dividing the wafer 200 by using a cutting device or the like. The adhesive film 400 may have a transmittance of 74% or more for light having a wavelength of 44 〇 nm or more and 7 〇〇 nm or less. The transmittance of the light can be adjusted by the material of the substrate 402 or the adhesive, thickness, surface treatment, and the like. The transmittance of light described above can be adjusted by the type or amount of the additive added to the substrate 402 or the adhesive layer 4〇4 201145372. For example, the light transmittance of the adhesive layer 4〇4 can be lowered by adding an inorganic filler to the adhesive layer 404. Here, the transmittance of light having a wavelength of 440 nm or more and 7 Å or less is 74% or more, which means that the maximum value of the transmittance of light having a wavelength of 44 〇 nm or more and 7 〇〇 nm or less is 74% or more. The transmittance of the above light varies depending on the thickness of the adhesive layer 400. Therefore, the transmittance of the light indicates the transmittance of the light at the thickness of the adhesive film 4〇〇 in a state of being adhered to the wafer 200. The adhesive film may have a transmittance of 74% or more for the entire range of wavelengths of 44 〇 nm or more and 700 nm or less. Next, the adhesive film 410 is adhered to the wafer 2 by using the pressing device 410. The pressing device 410 may be provided with a base 42A and a pressing head 43. The base 420' can mount the wafer 200. The wafer .200 is placed on the base 420 while being held on the jig 3 。. The base 42 is provided with a heating device 422. Further, the heating means 422 may not be used in the stage of adhering the adhesive film 4 to the wafer 2'. The indenter 430 has a pressing member 432 and a holding portion 434 that holds the pressing member 432. The indenter 430 presses the pressing member 432 toward the side of the base 42 to press the pressing member 4 3 2 as an elastic body. The elastomer may be a synthetic rubber such as Shi Xiyu rubber. Thereby, the adhesive film 400 is more uniformly adhered to the wafer 2 〇 than the metal pressing member. The pressing device 410 presses the wafer 2 on which the adhesive film 4 is placed on the surface, and is held between the base 420 and the indenter 430 to be pressed. In the present embodiment, first, the wafer 200 held on the jig 3 12 12 201145372 is placed on the bottom 420. Next, the pressing member 432 held on the pressing member 430 is pressed against the functional surface of the wafer 200 to press the adhesive film 40. In this case, the adhesive film 400 can be adhered to the wafer 200. Further, in the present embodiment, the case where the adhesive 400 is adhered to the wafer 200 by using the pressing device 4ig has been described. However, the method of adhering the film adhesive film 400 to the wafer 200 is not limited thereto. For example, a roller-type laminator can also be used to adhere the adhesive film to the wafer 2 . Fig. 5 is a view schematically showing an example in which the wafer cassette is placed on the chuck table 520 of the cutting device. In the present embodiment, first, the wafer 2 (10) to which the adhesive film 4G0 is adhered is placed on the chuck table 520 of the cutting device 51A. The wafer 20 〇 is placed on the chuck table 520 while being held on the jig 3 ’. Fig. 5 is a view schematically showing an example of a cross section of the cutting device 51 (). The cutting device 510 divides the wafer 2, for example, along the scribe line 2〇2. Thereby, the crystal mesh 200 can be singulated into a plurality of wafers 12A. The dicing device 5 1 〇 may be an example of a dividing device for dividing a wafer. The wafer is divided into a state in which it is held on the jig 300. The film 200 is bonded to the surface thereof and is divided. cut. The crucible device 510 may include a chuck table 52A, an alignment stage chuck table chuck table 53, an imaging unit 540, a cutting unit 550, and a control unit 56〇520, which are capable of holding the wafer being held The jig 3 520 ' can be used to attract the jig 300 by a pressure reducing device not shown, and the jig 300 is fixed to the chuck table 52 。. Aligning the platform 530, based on the instruction of the control unit 56〇, the chuck is operated 13 201145372
口 5 2 0在X方向及y方而软為B y万向上移動即可。對準平台530為xy 平台即可。 攝办。卩540，可根據接收在晶圓200的表面反射然後 透射過黏著膜400之光’來對晶圓2〇〇的表面影像進行攝 〜攝景/邛540 ’例如具有：照明構件，其照明晶圓“ο ; 光學鏡H統’其接收在晶0 2GG的表面反射之光；及攝 影7L件彡對光學鏡片系統所捕捉到之影像進行攝影。攝 秦β卩540，可將拍攝到之影像的資料傳送至控制部5的。雖 然並未特別對攝影部54〇作出限定，但攝影部54〇，較佳 為對可視光影像進行攝影。藉此，能夠使用廉價之光學鏡 片系統。 刀削邠550，基於控制部56〇的指示來切削晶圓2〇〇 即可。切削部550，具有切削晶圓2〇〇之刀刃552即可。 切削部550，可將旋轉之刀力552推麼在晶目2〇〇上以 切削晶圓200。 控制部560 ’具有影像處理部562與驅動部564即可。 影像處理部562，可自攝影部54〇接收晶圓2〇〇表面之影 像的資料。影像處理部562，可基於接收到之影像的資料， 來判斷切割道202的位置◦影像處理部562 ,可根據切割 道202的位置而決定對晶圓200來進行分割。影像處理部 562 ’可將與分割晶圓200之位置相關之資料傳送至驅動部 5 6 4 〇 驅動部564 ’可自影像處理部562接收與分割晶圓2〇〇 之位置相關之資料。驅動部564，可基於上述與分割晶圓 201145372 200之位置相關之資料，來驅動對準平台53。和切削部 550。藉此，驅動部564，能夠分割晶圓2〇〇而將元件a? 單片化。 例如’在影像處理部562衫要沿著切㈣2〇2在χ 方向上分割晶圓200之情況下，驅動部564，驅動對準平 台530,使夾頭工作台52〇移動’以使切割道2〇2的—端 位於刀刃552的下方。 接著，驅動部564，驅動切削部55〇，在刀刃552旋轉 之狀態下使切削部550向下方移動，讓刀刀552壓接晶圓 200。之後，驅動部564,驅動對準平台53〇，使晶圓2〇〇 在X方向上移動《藉此，能夠沿著切割道2〇2，在χ方向 上分割晶圓200。 第6圖係概略地表示對晶圓2〇〇的表面的影像進行攝 影之階段中的剖面圖的一例。本實施形態中，首先，切割 裝置510的攝影部54〇，根據接收在晶圓2〇〇的表面反射 然後透射過基材402和黏著層404之光，來對晶圓2〇〇的 表面影像進行攝影。 在黏著膜400對於波長在440nm以上700nm以下之光 之透射率在74%以上之情況下，作為攝影部54〇，能夠使 用對可視光領域之影像進行攝影之廉價機器。又，能夠在 維持基材402和黏著層404黏貼於晶圓200的表面上之狀 態下’對切割道202、凸塊124、電路圖案、對準標誌等的 影像進行攝影。藉此’能夠在維持基材402和黏著層4〇4 黏貼於晶圓200的表面上之狀態下，來分割晶圓2〇〇。 15 201145372 5 6 2，接收攝影部 562，基於上述影 影像處理部562， 接著’切割裝置510的影像處理部 540所拍攝下之影像的資料。影像處理部 像的資料，決定分割晶圓200之位置。 可從晶圓200的功能面的影像來得知切割冑搬的位置， 然後決^沿著切割道2G2分割晶圓2⑽。影像處理部如， :可從晶Η 2〇0的功能面的影像來得知凸塊124或是對準 標誌、的位置，來得知切割道2〇2的位置 第7圖係概略地表示分割晶圓2〇〇之階段中的剖面圖 的一例。本實施形態中，一旦影像處理部562決定分割晶 圓200之位置，驅動部564，便基於上述決定驅動對準平 台530及切削部550,以分割晶圓2〇〇,將晶片12〇單片化。 切割裝置510,可在切割膠帶3〇4#貼於晶圓2〇〇的背面 上之狀態下分割晶圓200。藉此，在分割晶圓2〇〇後之處 理會變得容易。 根據以上步驟，能夠製造附黏著膜之晶片7〇〇。若根 據本實施形態，能夠在基材402覆蓋於黏著層4〇4的表面 上之狀態下，製造附黏著膜之晶片7〇〇 ’因此能夠抑制切 削屑附著於黏著層404的表面。附黏著膜之晶片7〇〇，可 為附黏著膜之電子零件之一例子。 第8圖係概略地表示將基材402自黏著層4〇4剝離之 Ρ白段中的剖面圖的一例。本實施形態中，首先，在維持複 數個附黏著膜之晶片7 0 0黏貼於切割膠帶3 〇 4上之狀態 下將黏者膜8 0 0黏貼於複數個附黏著膜之晶片7 〇 〇的基 材402上。黏著膜8〇〇的材質，可選擇為使黏著膜8〇〇與 16 201145372 基材402間之剝離力大於基材402與黏著層404間之剝離 力0 接著’藉著朝圖中箭頭之方向拉扯黏著膜800，將基 材402自附黏著膜之晶片700的黏著層4〇4剝離。藉此， 月b夠在維持複數個附黏著膜之晶片7 0 〇黏貼於切割膠帶 304上之狀態下，將基材402自複數個附黏著膜之晶片7〇〇 的各個黏著層404剝離。 第9圖係概略地表示確認基材4 〇 2是否被剝離之階段 中的剖面圖的一例。如第9圖所示，藉著將基材4〇2自附 黏著膜之晶片700的黏著層404剝離，能夠製造附黏著層 之晶片900。本實施形態中，在將基材4〇2自附黏著膜之 晶片700的黏著層404剝離後，切割裝置51〇的攝影部 540 ,對晶圓200的表面影像進行攝影。影像處理部562， 處理晶圓200的表面影像，以確認基材4〇2是否自附黏著 膜之晶片700的黏著層404剝離。 例如，作為基材402，使用會吸收波長在44〇nm以上 700nm以下之光中具有特定波長之光之材料的情況下，晶 圓200的纟面的可視光影像中的基# 4〇2所存在之領域^曰 起來會被著色。藉此’能夠確認基材術是否自附黏著膜 之晶片700的黏著層404剝離。影像處理部562’可選別 基材402被剝離之附黏著層之晶片9〇〇。 是 了 此外，本實施形態中，對於切割裝置5H)確認基材4〇2 否自附黏著膜之晶7〇0的黏著層4〇4剥離之情況進广 說明°然而’上述確認方法並不限定於此。例如，^ 17 201145372 自切割膠帶304 附黏著膜之晶片 分離之拾取 70〇的黏著 由將各個附黏著層之晶片900 裝置’來確認基材402是否自 層404剝離。 又，本實施形態中，對於藉著 , 柯考對日日圓200的表面的可 視光影像進行影像處理，來確認基材4 ^ ， 疋否自附黏著膜 之日日片700的黏著層4〇4剝離 離之匱况進行了說明。然而， 上述確涊方法並不限定於此。 1 ^ 由將各個附黏著層之 晶片900自切割膠帶3〇4分 取裝置來拾取附黏著層 之晶片900之情況下，當基材術未自黏著層彻剝離時， 與基材402自黏著層楊剝離時相比，拾取裝置與附黏著 曰之Ba片900 ’會在比拾取裝置的前端與切割膠帶間 的距離更遠之地點處接觸1此，可基於拾取裝置所檢測 出之壓力變化，來確認基材術是否自附黏著膜之晶片· 的黏著層404剝離。 第10圖係概略地表示將附黏著層之晶片900黏著至電 路基板11 〇上之階段中的剖面圖的一例。本實施形態中， 首先拾取已確認基材402被剝離後之附黏著層之晶片 〇並配置於電路基板no的表面的規定位置。附黏著層 之B日片900與電路基板丨丨〇，係互相對準其位置藉以於 推壓兩者時’使附黏著層之晶片9〇〇的凸塊124與電路基 板Π 0的電極丨丨4作電性連接。 接著’將配置有附黏著層之晶片900之電路基板11 〇， 載置於推壓裝置41 0的底座42〇上。然後，利用保持於壓 頭430之推壓構件432，朝電路基板110的表面推壓附黏 18 201145372 者層之晶片 900〇 士卜η主 .〇. 匕時，加熱裝置422可經由底座420加 …、黏著層404。藉此，能夠使用黏著層，將基材已 剝離之附黏著層之晶片9〇〇黏著於電路基板Η。的表面上。 推壓構件432為彈性體即可。藉&，即使在同時朝電 路基板U〇的表面推壓複數個附黏著層之晶片900之情況 下亦倉b夠將附黏著層之曰曰曰片9〇〇與電路基板丄^ 〇連接得 很好。 根據以上步驟，能夠製造構裝體100。本實施形態中， 晶圓200係在黏著膜4〇〇黏貼於晶圓2〇〇的功能面側之狀 態下被分割為各個晶片12〇。藉此，能夠抑制切削屑等附 著於黏著膜400的黏著層4〇4上。本實施形態中，黏著膜 400 ’可對於波長為44〇nm以上7〇〇nm以下之光的透射率 在74/〇以上。藉此，能夠在黏著膜400黏貼於晶圓200的 功能面側之狀態下，決定分割晶圓200之位置。 本實施形態中，黏著膜400的基材402的厚度為75 // m以上即可，而基材4〇2與黏著層4〇4之間之剝離力為 〇.17N/5cm以上即可。藉此，即使在黏著膜4〇〇黏貼於晶 圓200的功能面側之狀態下分割晶圓200，亦能夠在該分 割步驟中防止基材402自黏著層4〇4剝離。 本實施形態中，已說明了可在磨削過晶圓2〇〇的背面 之後’將黏著膜400黏貼於晶圓200的功能面，再切割晶 圓200之要旨。然而，構裝體1〇〇的製造方法並不限定於 此。例如，亦可在將黏著膜400黏貼於晶圓200的功能面 上之後’再實施晶圓200的背面磨削與晶圓200的切割。 19 201145372 當磨削晶圓2〇〇的背面時，可將黏著瞑40〇作為保護晶圓 2〇〇的功能面之保護層來加以利用’亦可在黏著膜4〇〇之 上另外再加設保護層。 第11圖係概略地表示將晶片120構裝於電路基板u〇 上之方法的其他例。第11圖中，對於與第i圖至第i 〇圖 中相同或類似之部分，附加上與第1圖至第10圖相同之參 考編號，並省略重覆之說明。 本實施形態，在S1102中，準備晶圓2〇〇。在su〇4 中’將黏著膜400黏貼於晶圓200的功能面上。黏著膜4〇〇 之黏貼，可與關連於第4圖而說明過之方法同樣地實施。 在S1106中，磨削在功能面上黏貼有黏著膜4〇〇之晶 圓200的背面。晶圓200的背面磨削，例如能夠根據以下 之流程來實施。首先’將在功能面上黏貼有黏著膜4〇〇之 晶圓200載置於背面研磨裝置的夾頭工作台丨丨62上。 此時，以黏著膜400側之面能夠面向失頭工作台11 62 之方式來載置晶圓200。本實施形態中，因為黏著膜4〇〇 被黏貼於晶圓200的功能面上，故可以不需要在黏著膜4〇〇 的基材402之上黏貼用來保護基材402之保護層（背面研磨 膠帶）。藉此，能夠抑制構裝體100、附黏著膜之晶片7〇〇 及附黏者層之晶片900的製造費用。 接著，使背面研磨裝置的磨削輪丨丨64旋轉，並以旋轉 中的磨削輪1164推壓晶圓2〇〇的背面。藉此’能夠磨削晶 圓200的背面。 在S1108中’將晶圓2〇〇轉印至切割膠帶3〇4上。藉 20 201145372 此此夠將晶圓2 0 0黏著於治具3 〇 〇上。此時，晶圓2 〇 〇 的背面與切割膠帶304可相黏。在S 111 〇中，切割晶圓200。 藉此’能夠製造附黏著膜之晶片700。晶圓200的切割， 可與關連於第5圖至第7圖而說明過之方法同樣地實施。 在SI 112中’將基材4〇2自黏著層4〇4剝離。藉此， 黏著層404露出。又，能夠得到附黏著層之晶片9〇〇。基 材402之剝離，可與關連於第8圖而說明過之方法同樣地 實施。在SI II4中，拾取被單片化之附黏著層之晶片9〇〇。 拾取裝置的拾取工具11 72，可藉著吸附附黏著層之晶片 9〇〇來拾取附黏著層之晶片9〇〇。 此時’選別被確認到基材402已剝離之附黏著層之晶 片900，然後加以拾取即可。附黏著層之晶片9〇〇之選別， 可與關連於第9圖而說明過之方法同樣地，藉由確認基材 4〇2已自附黏著膜之晶片7〇〇的黏著層4〇4剝離而實施。 在S1116中，將附黏著層之晶片9〇〇配置於電路基板 110的規定位置上。在S1118中，將附黏著層之晶片9〇〇 壓接於電路基板110上。附黏著層之晶片900之配置及壓 接，可與關連於第10圖而說明過之方法同樣地實施。根據 以上步驟，能夠製造構裝體100。 此外，上述實施形態中，對於在推壓構件432上使用 合成橡膠等之彈性體，將複數個之附黏著層之晶片9〇〇一 併構裂於電路基板110上之情況進行了說明。然而，將晶 片120構裝於電路基之方法，並不限定於此。例 如’亦可不使用彈性材料等之彈性體地將附黏著層之晶片 21 201145372 900構裝於電路基板110上。又’亦可將複數個之附黏著 層之晶片900，一次一個地構裝於電路基板丨i 〇上。 第12圖係概略地表示將晶片120構裝於電路基板11〇 上之方法的其他例。第12圖係概略地表示將附黏著層之晶 片90〇黏著於電路基板110上之階段中的剖面圖的一例。 第12圖中’對於與第1圖至第η圖中相同或類似之部分， 附加上與第1圖至第11圖相同之參考編號，並省略重覆之 說明。 推屢裝置1210，係藉由倒裝晶片接合法而將電路基板 110與晶片120作電性連接。推壓裝置1210,具備底座122〇 與陶竟工具1230。推壓裝置1210及底座1220，可各自具 有與推壓裝置410及底座420相同之構成。 陶資•工具1230’朝向電路基板110推壓附黏著層之晶 片900 °陶瓷工具1230,可將複數個附黏著層之晶片9〇〇， 一次—個地朝電路基板110推壓。陶瓷工具1230，可含有 石反化發、氮化矽、氮化鋁等之陶瓷。陶瓷工具1230，可為 壓頭的一例《陶瓷工具1230,可具有加熱陶瓷工具123〇 之加熱裝置1232。加熱裝置1232，可為陶瓷加熱器。 [實施例] (實施例1〜9) 如表1的實施例1至實施例8所示，在此準備了「黏 著層與基材之剝離力」、「基材厚度」及「可視光的透射率」 不同的8種黏著膜。實施例1至實施例8中，使用NCF作 22 201145372 為黏著膜的黏著層之一例。x，作為實施例9，在此準備 了使用ACF作為黏著層之一例的黏著膜。各黏著膜的基材 中使用了脫模處理方法與厚度不同之pet膜。 實施例1至實施例8的黏著膜，係利用以下流程製作。 首先，加入100質量份之甲苯至1〇質量份之苯氧基樹脂 (YP 50東都化成股份有限公司（Tohto Kasei Co.，Ltd.)製 造）、i〇質量份之液狀環氧樹脂（EP828，日本環氧樹脂股份 有限公司（Japan Epoxy Resin c〇，Ud )製造）、15質量份之 咪唑系潛在性硬化劑（N〇VACURE 3941Hp，旭化成股份有 限公司（Asahi Kasei Co., Ltd.)製造）、5質量份之橡膠成分 (RKB ’樹月曰化成股份有限公司（Resjn〇us Kasei c〇.，Ltd.) 製造）及1質量份之矽烷偶合劑（A_187，邁圖高新材料公司 (Momentive Performance Materials Co.，Ltd.)製造）中，並加 以攪拌，調製出均勻的樹脂溶液。 接著’使用棒狀塗佈機，將上述樹脂溶液塗佈於實施 例1至實施例8中所使用之各基材上。藉著將塗佈樹脂溶 液之基材置入80。C之加熱爐中，使溶媒揮發而使樹脂溶液 乾燥’製作出具有PET膜與NCF之黏著膜。所製作出之黏 著膜的NCF的厚度均為30/zm。 實施例9的黏著膜’係利用以下流程製作。首先，加 入100質量份之甲苯至1〇質量份之苯氧基樹脂（γρ_5〇，東 都化成股份有限公司（Tohto Kasei Co.，Ltd.)製造）、10質量 份之液狀環氧樹脂（EP828，日本環氧樹脂股份有限公司 (Japan Epoxy Resin Co.，Ltd.)製造）、15質量份之咪唑系潛 23 201145372 在性硬化劑（NOVACURE 3941HP，旭化成股份有限公司 (Asahi Kasei Co·，Ltd.)製造）、5質量份之橡膠成分（RKB， 樹脂化成股份有限公司（Resinous Kasei Co·, Ltd.)製造）、] 質量份之矽烷偶合劑（A-187 ’邁圖高新材料公司The mouth 5 2 0 is in the X direction and the y side, and the soft is B y 10,000. The alignment platform 530 can be an xy platform. Photo.卩540, the surface image of the wafer 2〇〇 can be photographed according to the light received on the surface of the wafer 200 and then transmitted through the adhesive film 400. </ </ RTI> </ RTI> </ RTI> </ RTI> The circle "ο ; optical mirror H system" receives the light reflected on the surface of the crystal 0 2GG; and the photographing 7L pieces of the image captured by the optical lens system. Photographing Qin β卩540, the image can be captured The data is transmitted to the control unit 5. Although the imaging unit 54 is not particularly limited, the imaging unit 54 is preferably configured to capture a visible light image. Thereby, an inexpensive optical lens system can be used. The crucible 550 may be configured to cut the wafer 2 by the instruction of the control unit 56. The cutting portion 550 may have a cutting edge 552 for cutting the wafer 2. The cutting portion 550 can push the rotating blade force 552. The wafer 200 is cut on the crystal mesh 2. The control unit 560' has the image processing unit 562 and the driving unit 564. The image processing unit 562 can receive the image of the surface of the wafer 2 from the image capturing unit 54. Data processing unit 562 can receive based on The image data is used to determine the position of the scribe line 202. The image processing unit 562 can determine the division of the wafer 200 according to the position of the scribe line 202. The image processing unit 562' can be related to the position of the divided wafer 200. The data is transmitted to the driving unit 546. The driving unit 564' can receive the information related to the position of the divided wafer 2 from the image processing unit 562. The driving unit 564 can be based on the position of the divided wafer 201145372 200. The data is used to drive the alignment stage 53 and the cutting portion 550. Thereby, the driving unit 564 can divide the wafer 2 to singulate the element a. For example, the image processing unit 562 is to be cut along the line. (4) In the case where the wafer 200 is divided in the χ direction, the driving portion 564 drives the alignment stage 530 to move the chuck table 52 ' so that the end of the scribe line 2 〇 2 is positioned below the blade 552. Next, the driving unit 564 drives the cutting portion 55A, moves the cutting portion 550 downward while the blade 552 is rotated, and presses the blade 552 against the wafer 200. Thereafter, the driving portion 564 drives the alignment stage 53A. Move the wafer 2 in the X direction In this way, the wafer 200 can be divided in the x direction along the scribe line 2 〇 2 . Fig. 6 is a view schematically showing an example of a cross-sectional view at the stage of photographing the image of the surface of the wafer 2 . In the present embodiment, first, the image capturing unit 54 of the cutting device 510 images the surface of the wafer 2 according to the light received on the surface of the wafer 2 and then transmitted through the substrate 402 and the adhesive layer 404. When the transmittance of the adhesive film 400 to light having a wavelength of 440 nm or more and 700 nm or less is 74% or more, an inexpensive device for photographing an image in the visible light region can be used as the image capturing unit 54. Further, it is possible to image an image of the dicing street 202, the bump 124, the circuit pattern, the alignment mark, and the like while maintaining the substrate 402 and the adhesive layer 404 adhered to the surface of the wafer 200. Thereby, the wafer 2 can be divided while maintaining the substrate 402 and the adhesive layer 4〇4 adhered to the surface of the wafer 200. 15 201145372 5 6 2, the reception imaging unit 562, based on the image processing unit 562, then reads the data of the image captured by the image processing unit 540 of the cutting device 510. The image processing unit determines the position of the wafer 200 to be divided. The position of the dicing movement can be known from the image of the functional surface of the wafer 200, and then the wafer 2 (10) can be divided along the dicing street 2G2. For example, the image processing unit can know the position of the bump 124 or the alignment mark from the image of the functional surface of the wafer 2〇0, and know the position of the scribe line 2〇2. An example of a cross-sectional view in the stage of the circle. In the present embodiment, when the image processing unit 562 determines the position at which the wafer 200 is to be divided, the driving unit 564 drives the alignment stage 530 and the cutting unit 550 based on the above-described determination to divide the wafer 2 to divide the wafer 12 into a single piece. Chemical. The cutting device 510 can divide the wafer 200 in a state where the dicing tape 3〇4# is attached to the back surface of the wafer 2〇〇. Thereby, it becomes easier to divide the wafer 2 later. According to the above steps, the wafer 7 to which the adhesive film is attached can be manufactured. According to the present embodiment, the wafer 7〇〇 with the adhesive film can be produced in a state where the substrate 402 is covered on the surface of the adhesive layer 4〇4, so that the cutting debris can be prevented from adhering to the surface of the adhesive layer 404. The wafer 7 to which the adhesive film is attached may be an example of an electronic component to which an adhesive film is attached. Fig. 8 is a view schematically showing an example of a cross-sectional view of the base portion 402 in which the base material 402 is peeled off from the adhesive layer 4〇4. In the present embodiment, first, the adhesive film 80 0 is adhered to the plurality of wafers 7 to which the adhesive film is attached while maintaining the plurality of adhesive film-attached wafers 70 adhered to the dicing tape 3 〇4. On the substrate 402. The material of the adhesive film 8 , can be selected such that the peeling force between the adhesive film 8 〇〇 and 16 201145372 substrate 402 is greater than the peeling force between the substrate 402 and the adhesive layer 404 0 then 'by the direction of the arrow in the figure The adhesive film 800 is pulled, and the substrate 402 is peeled off from the adhesive layer 4〇4 of the wafer 700 to which the adhesive film is attached. Thereby, the month b is sufficient to peel off the substrate 402 from the plurality of adhesive layers 404 of the plurality of adhesive film-attached wafers 7 while maintaining the plurality of adhesive film-attached wafers 70 affixed to the dicing tape 304. Fig. 9 is a view schematically showing an example of a cross-sectional view at the stage of confirming whether or not the base material 4 〇 2 is peeled off. As shown in Fig. 9, by adhering the substrate 4〇2 to the adhesive layer 404 of the wafer 700 to which the adhesive film is attached, the wafer 900 to which the adhesive layer is attached can be manufactured. In the present embodiment, after the base material 4〇2 is peeled off from the adhesive layer 404 of the wafer 700 to which the adhesive film is attached, the image forming unit 540 of the cutting device 51 is photographed on the surface image of the wafer 200. The image processing unit 562 processes the surface image of the wafer 200 to confirm whether or not the substrate 4〇2 is peeled off from the adhesive layer 404 of the wafer 700 to which the adhesive film is attached. For example, in the case where a material having a specific wavelength of light having a wavelength of 44 〇 nm or more and 700 nm or less is used as the substrate 402, the base # 4 〇 2 in the visible light image of the facet of the wafer 200 is used. The field of existence will be colored. Thereby, it can be confirmed whether or not the substrate is peeled off from the adhesive layer 404 of the wafer 700 to which the adhesive film is attached. The image processing unit 562' may select a wafer 9 to which the adhesive layer of the adhesive layer is peeled off. In addition, in the present embodiment, it is described in the cutting device 5H) whether the substrate 4〇2 is peeled off from the adhesive layer 4〇4 of the bonding film 7〇0. However, the above confirmation method is not Limited to this. For example, ^ 17 201145372 Self-cut tape 304 with adhesive film wafer Separation pick-up 70 〇 Adhesion It is confirmed whether the substrate 402 is peeled off from the layer 404 by the wafer 900 device of each adhesive layer. Further, in the present embodiment, the image of the visible light image on the surface of the Japanese yen 200 is image-processed by Keke, and the substrate 4 is confirmed, and the adhesive layer of the Japanese wafer 700 is attached to the adhesive film. 4 The situation of peeling off was explained. However, the above-described method of determination is not limited to this. 1 ^ In the case where the wafer 900 with the adhesive layer is picked up from the dicing tape 3〇4 to pick up the wafer 900 with the adhesive layer, when the substrate is not peeled off from the adhesive layer, it adheres to the substrate 402. Compared with the peeling of the layer of yang, the pick-up device and the adhesively attached Ba piece 900' will contact at a position farther than the distance between the front end of the pick-up device and the dicing tape, and can be changed based on the pressure detected by the pick-up device. To confirm whether the substrate is peeled off from the adhesive layer 404 of the wafer to which the adhesive film is attached. Fig. 10 is a view schematically showing an example of a cross-sectional view of a stage in which a wafer 900 having an adhesive layer is adhered to a circuit board 11 . In the present embodiment, the wafer 附 of the adhesive layer after the substrate 402 has been peeled off is picked up and placed at a predetermined position on the surface of the circuit board no. The B-slice 900 with the adhesive layer and the circuit board are aligned with each other so as to push the two of the bumps 124 of the adhesive layer 9 and the electrode of the circuit board Π 0丨 4 for electrical connection. Next, the circuit board 11 on which the wafer 900 having the adhesive layer is placed is placed on the base 42A of the pressing device 41 0. Then, the pressing member 432 held by the indenter 430 is pressed against the surface of the circuit substrate 110 to press the wafer 900 of the layer of the layer of the circuit board 110, and the heating device 422 can be added via the base 420. ..., adhesive layer 404. Thereby, the adhesive layer can be used to adhere the wafer 9 to which the adhesive layer of the substrate has been peeled off to the circuit board. on the surface. The pressing member 432 may be an elastic body. By using &, even when a plurality of wafers 900 having an adhesive layer are pressed toward the surface of the circuit board U 同时 at the same time, the slabs 9 附 of the adhesive layer are connected to the circuit board 丄 〇 Very good. According to the above steps, the package 100 can be manufactured. In the present embodiment, the wafer 200 is divided into individual wafers 12A in a state in which the adhesive film 4 is adhered to the functional surface side of the wafer 2A. Thereby, it is possible to suppress the adhesion of the chips or the like to the adhesive layer 4〇4 of the adhesive film 400. In the present embodiment, the adhesive film 400' has a transmittance of 74/〇 or more with respect to light having a wavelength of 44 〇 nm or more and 7 〇〇 nm or less. Thereby, the position of the divided wafer 200 can be determined in a state where the adhesive film 400 is adhered to the functional surface side of the wafer 200. In the present embodiment, the thickness of the base material 402 of the adhesive film 400 may be 75 // m or more, and the peeling force between the base material 4〇2 and the adhesive layer 4〇4 may be 〇17 N/5 cm or more. Thereby, even if the wafer 200 is divided while the adhesive film 4 is adhered to the functional surface side of the wafer 200, the substrate 402 can be prevented from being peeled off from the adhesive layer 4〇4 in the dividing step. In the present embodiment, it has been described that the adhesive film 400 can be adhered to the functional surface of the wafer 200 after the back surface of the wafer 2 is ground, and the wafer 200 is cut. However, the manufacturing method of the structure 1〇〇 is not limited to this. For example, the back surface grinding of the wafer 200 and the dicing of the wafer 200 may be performed after the adhesive film 400 is adhered to the functional surface of the wafer 200. 19 201145372 When grinding the back side of the wafer 2, the adhesive 瞑40〇 can be used as a protective layer for protecting the functional surface of the wafer 2'. It can also be added on the adhesive film 4〇〇 Set a protective layer. Fig. 11 is a view schematically showing another example of a method of arranging the wafer 120 on the circuit board u. In the eleventh figure, the same or similar parts as those in the i-th to i-th drawings are denoted by the same reference numerals as in the first to tenth drawings, and the description of the repetition is omitted. In the present embodiment, in S1102, the wafer 2 is prepared. In the su〇4, the adhesive film 400 is adhered to the functional surface of the wafer 200. The adhesion of the adhesive film 4 can be carried out in the same manner as the method described in connection with Fig. 4. In S1106, the back surface of the crystal 200 of the adhesive film 4 is adhered to the functional surface. The back grinding of the wafer 200 can be carried out, for example, according to the following flow. First, the wafer 200 to which the adhesive film 4 is adhered on the functional surface is placed on the chuck table 62 of the back grinding apparatus. At this time, the wafer 200 is placed so that the surface on the side of the adhesive film 400 can face the head loss table 11 62 . In the present embodiment, since the adhesive film 4 is adhered to the functional surface of the wafer 200, it is not necessary to adhere the protective layer for protecting the substrate 402 on the substrate 402 of the adhesive film 4 (back surface). Grinding tape). Thereby, the manufacturing cost of the package 100, the wafer 7 of the adhesive film, and the wafer 900 of the adhesive layer can be suppressed. Next, the grinding rim 64 of the back grinding device is rotated, and the back surface of the wafer 2 is pressed by the rotating grinding wheel 1164. Thereby, the back surface of the crystal 200 can be ground. In S1108, the wafer 2 is transferred onto the dicing tape 3〇4. Borrow 20 201145372 This is enough to stick the wafer 200 to the fixture 3 〇 。. At this time, the back surface of the wafer 2 〇 与 can be adhered to the dicing tape 304. In S 111 ,, the wafer 200 is diced. Thereby, the wafer 700 with the adhesive film can be manufactured. The dicing of the wafer 200 can be carried out in the same manner as the method described in connection with Figs. 5 to 7 . In SI 112, the substrate 4〇2 was peeled off from the adhesive layer 4〇4. Thereby, the adhesive layer 404 is exposed. Further, the wafer 9 to which the adhesive layer is attached can be obtained. The peeling of the base material 402 can be carried out in the same manner as the method described in connection with Fig. 8. In SI II4, the wafer 9 of the affixed adhesive layer is picked up. The pick-up tool 11 72 of the pick-up device picks up the wafer 9 附 with the adhesive layer by sucking the wafer 9 附 with the adhesive layer. At this time, the wafer 900 of the adhesive layer which has been peeled off from the substrate 402 is confirmed, and then picked up. The bonding of the wafers with the adhesive layer can be carried out in the same manner as described in connection with Fig. 9, by confirming that the substrate 4〇2 has adhered to the adhesive layer of the wafer 7 of the adhesive film 4〇4 Stripped and implemented. In S1116, the wafer 9 to which the adhesive layer is attached is placed at a predetermined position on the circuit board 110. In S1118, the wafer 9A to which the adhesive layer is attached is pressure-bonded to the circuit board 110. The arrangement and crimping of the wafer 900 with the adhesive layer can be carried out in the same manner as the method described in connection with Fig. 10. According to the above steps, the package 100 can be manufactured. Further, in the above-described embodiment, the case where a plurality of the adhesive-attached wafers 9 are bonded to the circuit board 110 by using an elastic body such as synthetic rubber on the pressing member 432 has been described. However, the method of arranging the wafer 120 on the circuit substrate is not limited thereto. For example, the wafer 21 201145372 900 to which the adhesive layer is attached may be mounted on the circuit substrate 110 without using an elastic material or the like. Further, a plurality of wafers 900 to which an adhesive layer is attached may be attached to the circuit board 丨i 一次 one at a time. Fig. 12 is a view schematically showing another example of a method of arranging the wafer 120 on the circuit board 11A. Fig. 12 is a view schematically showing an example of a cross-sectional view in a stage in which a wafer 90 to which an adhesive layer is adhered is adhered to a circuit board 110. In Fig. 12, the same reference numerals as those in Figs. 1 to 11 are attached to the same or similar parts as those in Figs. 1 to η, and the description of the overlap is omitted. The repeating device 1210 electrically connects the circuit substrate 110 and the wafer 120 by flip chip bonding. The pressing device 1210 is provided with a base 122A and a ceramic tool 1230. The pressing device 1210 and the base 1220 may have the same configuration as the pressing device 410 and the base 420. The ceramic tool 1230' pushes the wafer 900 ° ceramic tool 1230 with the adhesive layer toward the circuit substrate 110, and the plurality of adhesive-attached wafers 9 can be pressed one by one toward the circuit substrate 110. The ceramic tool 1230 may contain ceramics such as stone reversal, tantalum nitride, and aluminum nitride. The ceramic tool 1230, which may be an example of a ram, "ceramic tool 1230, may have a heating device 1232 that heats the ceramic tool 123". The heating device 1232 can be a ceramic heater. [Examples] (Examples 1 to 9) As shown in Examples 1 to 8 of Table 1, "the peeling force of the adhesive layer and the substrate", the "thickness of the substrate", and the "visible light" were prepared. Transmittance" 8 different adhesive films. In Examples 1 to 8, NCF was used as 22 201145372 as an example of an adhesive layer of an adhesive film. x. As Example 9, an adhesive film using ACF as an example of an adhesive layer was prepared. A release film and a pet film having different thicknesses were used for the substrate of each of the adhesive films. The adhesive films of Examples 1 to 8 were produced by the following procedures. First, 100 parts by mass of toluene to 1 part by mass of phenoxy resin (manufactured by Tohto Kasei Co., Ltd.), i〇 part by mass of liquid epoxy resin (EP828) , manufactured by Japan Epoxy Resin c〇 (Ud), 15 parts by mass of an imidazole-based latent hardener (N〇VACURE 3941Hp, manufactured by Asahi Kasei Co., Ltd.) ), 5 parts by mass of rubber component (RKB 'Resjn〇us Kasei c〇., Ltd.) and 1 part by mass of decane coupling agent (A_187, Momentive) In Production Materials Co., Ltd.), and stirring, a uniform resin solution was prepared. Then, the above resin solution was applied to each of the substrates used in Examples 1 to 8 using a bar coater. The substrate coated with the resin solution was placed in 80. In the heating furnace of C, the solvent was volatilized to dry the resin solution. An adhesive film having a PET film and NCF was produced. The thickness of the NCF of the adhesive film produced was 30/zm. The adhesive film of Example 9 was produced by the following procedure. First, 100 parts by mass of toluene is added to 1 part by mass of a phenoxy resin (γρ_5〇, manufactured by Tohto Kasei Co., Ltd.), and 10 parts by mass of a liquid epoxy resin (EP828) , Japan Epoxy Resin Co., Ltd.), 15 parts by mass of imidazole-based late 23 201145372 In Sex Hardener (NOVACURE 3941HP, Asahi Kasei Co., Ltd. )), 5 parts by mass of rubber component (RKB, manufactured by Resinous Kasei Co., Ltd.), and parts by mass of decane coupling agent (A-187 'Mitto High-tech Materials Co., Ltd.
份之導電性粒子（AUE，積水化學工業（Sekisui Chemical & Ltd·))中，並加以攪拌，調製出均勻的樹脂溶液。 接著’使用棒狀塗佈機’將上述樹脂溶液塗佈於實施 例9所使用之各基材上。藉由將塗佈樹脂溶液之基材置入 8〇°C之加熱爐中，使溶媒揮發而使樹脂溶液乾燥，製作出 具有PET膜與ACF之黏著膜。製作出之黏著膜的ACF的 厚度均為.3 0/zm。 實施例1至實施例9之黏著膜中，黏著層與基材之剝 離力，係在將樹脂溶液塗佈於基材之上前，藉著對基材的 表面施加脫模處理而加以調整。脫模處理，係利用以下方 式實施：將石夕_系之剝離劑塗佈於基材的表φ，然後加熱 基材，使基材乾燥。藉由調整㈣系之剝離劑的調配，製 作出黏著層與基材之剝離力不同之黏著膜。 基材與黏著層之剝離力，係使用拉力試驗機 (Τ— ’ 〇denteC 股份有限公司（Orientec Co·，Ltd.)製造） 進行測量。測量，係使用寬5〇mm， 實施》拉扯方向設為丨8〇度方向，， 離。拉扯速度設定為每分鐘3〇〇mm。 渔度55± 1 0%RH之條件下實施。 ’長100mm之黏著膜來 而拉扯方向設為T型剝 。測量係在溫度23±2°C， 24 201145372 黏著膜的透射率’係使用MCPD-2000(大塚電子股份有 限么司（Otsuka Electronics Co.，Ltd.)製造）來測量平行光線 透射率。黏著膜的透射率，係利用以下之流程而算出。首 先，以黏著膜的黏著層面對玻璃基板之方式將各黏著膜黏 貼於玻璃基板上，以準備測量試料。玻璃基板的厚度為 1.1mm。接著，測量玻璃基板單體的平行光線透射率。測 量’係使透射之光的波長連續地自3〇〇nm至u〇〇nm變化 而實施。接著，對於所準備之各測量試料，亦同樣地測量 平行光線透射率。將玻璃基板單體的平行光線透射率設為 100°/〇 ’算出各黏著膜的透射率。 基材的厚度，係使用測微計（三豐儀器股份有限公司 (Mitutoyo Corporation)製造）來測量。 接著’將實施例1至實施例9的各黏著膜黏貼至矽晶 圓其中一面的全表面上，以準備用於切割試驗之試料。石夕 晶圓的直徑為6吋，而矽晶圓的厚度為4〇〇 " m。 接著’藉由切割，將上述各試料分割成6.3mmx6.3mm 之晶片，然後評價圖案視認性與加工性。切割裝置，係使 用DFD-651(迪思科股份有限公司（DISCO Corporation)製 造）。刀刃’係使用NBC — ZB2030 — 〇.〇4t(迪思科股份有限 公司（DISCO Corporation)製造）。刀刃的厚度為4()/zm。刀 刃的旋轉數设定為30000rpm。刀刃的移動速度設定為 10mm/ sec 0 圖案之視認性’係利用搭載於DFD ~~ 651上之CCD相 機來觀察已形成於晶圓表面上之圖案。圖案的線寬為30// 25 201145372 m。加工性，係在藉由切割裝置切割晶圓’將其單片化為 6.3mmx6.3mm之晶片的情況下，根據測量基村自黏著層剝 離之晶片的數量來加以評價。 表1係表示使用實施例1至實施例8之黏著膜來分割 晶圓之情況下的圖案視認性與加工性。表1中，◎表示非 常良好，〇表示良好。 [表1] 項目 單位 實施 例1 實施 例2 實施 例3 實施 例4 實施 例5 實施 例6 實施 例7 實施 例8 黏著層與基 材之剝離力 N/5cm 0.17 0.22 0.30 0.72 1.62 0.20 0.42 0.81 荽 基* ί厚度 β m 100 100 100 100 100 75 75 75 膜的 物理 特性 可視 波長 440nm 74 74 75 75 75 80 81 79 光的 透射 波長 5 50nm % 83 83 84 85 84 88 88 86 率 波長 700nm 88 89 89 88 88 92 91 91 評價 圖案視認性 一 〇 〇 〇 〇 〇 〇 〇 〇 結果 加工性 — 〇 〇 〇 ◎ ◎ 〇 〇 〇 如表1所示，能夠在黏貼著實施例丨至實施例8之黏 著膜之狀態下，判別矽晶圓上的圖案為良好。如表1所示， 即使在黏貼著實施例1至實施例8之黏著膜之狀態下切割 矽晶圓，亦能夠抑制基材自黏著層剝離。 即使對於實施例9之黏著膜，亦能夠在將實施例9之 黏著膜黏貼於石夕晶圓上之狀態下，判別矽晶圓上的圖案為 良好。又’即使在將實施例9之黏著膜黏貼於矽晶圓上之 狀態下切割矽晶圓，亦能夠抑制基材自黏著層剝離。 26 201145372 與實施例9同樣地，使用厚度5〜3〇 " m之ACF作為黏 著層而製造出黏著膜。對於製造出之各黏著膜，與實施例 1至實施例9同樣地評價圖案視認性與加工性。對於這些 黏著膜，亦能夠判別矽晶圓上的圖案為良好。又，即使在 將這些黏著膜黏貼於矽晶圓上之狀態下切割矽晶圓，亦能 夠抑制基材自黏著層剝離。又，在製造出具有使NCF與 ACF積層而得到之黏著層的黏著臈之情況下，亦能夠得到 同樣效果。 (比較例1〜10) 如表2的比較例1至比較例1 〇所示，在此準備了「黏 著層與基材之剝離力」、「基材厚度」及「可視光的透射率」 不同的10種黏著膜。「黏著層與基材之剝離力」、「基材厚 度」及「可視光的透射率」，係與實施例1至實施例9之情 況同樣地進行測量。 比較例1的黏著膜’係藉由與實施例1至實施例8的 點著膜同樣之方法來製造。根據調整矽酮系之剝離劑的調 配’製作出黏著層與基材之剝離力比實施例1至實施例8 的黏著膜弱之黏著膜。 比較例2及比較例3的黏著膜，係利用以下流程製作。 首先’加入100質量份之曱苯至1〇質量份之苯氧基樹脂 (YP-50’東都化成股份有限公司（T〇ht〇 Kasei Co.，Ltd.)製 造）、10質量份之液狀環氧樹脂（EP828，曰本環氧樹脂股份 有限公司（Japan Epoxy Resin Co.，Ltd.)製造）、15質量份之 27 a 201145372 咪唑系潛在性硬化劑（NOVACURE 3941HP，旭化成股份有 限公司（Asahi Kasei Co” Ltd.)製造）、5質量份之橡膠成分 (RKB ’樹脂化成股份有限公司（Resinous Kasei Co., Ltd.) 製造）、50質1份之無機填充劑（s〇E2，Admatechs股份有 限公司（Admatechs Co·, Ltd.)製造）及1質量份之矽烷偶合 劑（A-187 ’ 邁圖面新材料公司（Momentive Performance Materials Co.，Ltd.)製造）中，並加以攪拌，調製出均勻之 樹脂溶液。 接著’使用棒狀塗佈機，將上述樹脂溶液塗佈於比較 例2及比較例3中所使用之各基材上。藉由將塗佈樹脂溶 液之基材置入8(rc之加熱爐中，使溶媒揮發而使樹脂溶液 乾燥，製作出具有PET膜與NCF之黏著膜。所製作出之黏 著膜的NCF的厚度均為3〇以m。 在比較例2及比較例3中，亦在塗佈樹脂溶液於基材 上之前，藉由對基材表面施予脫膜處理，來調整黏著層與 基材之剝離力。脫膜處理，係根據將㈣系之剝離劑塗佈 於基材的表面後，加熱基材，然後使基材乾燥之方式來實 施。藉由調整矽網系之剝離劑的調配，製作出黏著層與基 材之剝離力不同之黏著膜。 比較例4至比較例10之黏著膜，除了使用厚度以心 ，50 " m之PET膜作為基材以外，係利用與實施例1至 施例8之黏著膜同樣之方法來製造。 上之ί比^ 4至比較例1G中，亦在塗佈樹腊溶液於基材 ⑴藉由對基材表面施予脫膜處理，來調整黏著層與 28 201145372 基材之剝離力。脫膜處理，係根據將石夕酮系之剝離劑塗佈 於基材的表面纟’加熱基材，然後使基材乾燥之方式來實 施。藉由調整石夕酮系之剝離劑的調配，製作出黏著層與基 材之剝離力不同之黏著膜。 一將比較例u比較例10的各黏著膜黏貼⑼晶圓其中 -面的全表面上，以準備用於切割試驗之試料。石夕晶圓的 直徑為6对，而碎晶圓的厚度為彻”。與實施例i至實 施例9之情況同樣地’藉由切割，將上述各試料分割成 6.3mmx6.3mm之晶片，然後評價圖案視認性與加工性。 表2係表示使用比較例！至比較例1〇之黏著膜來分割 晶圓之情況下的圖案視認性與加工性。表2中，◎表示^ 常良好’〇表示良好’ △表示_部分不良，χ : L表2] 項目 單位 比較 例1 比較 例2 比較 例3 比較 例4 比較 例5 比較 例6 比較 例7 比較 例8 比較比較 例9例10 黏著層與基 材之剝離力 m·32!0 士 〇.例The conductive particles (AUE, Sekisui Chemical & Ltd.) were stirred and mixed to prepare a uniform resin solution. Then, the above resin solution was applied to each of the substrates used in Example 9 using a bar coater. The substrate coated with the resin solution was placed in a heating oven at 8 ° C to volatilize the solvent to dry the resin solution, thereby producing an adhesive film having a PET film and ACF. The thickness of the ACF produced by the adhesive film was .30/zm. In the adhesive films of Examples 1 to 9, the peeling force of the adhesive layer and the substrate was adjusted by applying a release treatment to the surface of the substrate before applying the resin solution onto the substrate. The mold release treatment was carried out by applying a Shisha-based release agent to the surface φ of the substrate, and then heating the substrate to dry the substrate. By adjusting the blending of the (4) stripping agent, an adhesive film having a different peeling force from the adhesive layer to the substrate is prepared. The peeling force of the substrate and the adhesive layer was measured using a tensile tester (manufactured by Orientec Co., Ltd.). For measurement, use a width of 5 〇 mm, and the implementation of the pull direction is set to 丨8 方向 direction, away. The pulling speed is set to 3 mm per minute. It is carried out under conditions of a fishing degree of 55 ± 10% RH. 'The adhesive film is 100mm long and the pulling direction is T-shaped peeling. The measurement was carried out at a temperature of 23 ± 2 ° C, 24 201145372 The transmittance of the adhesive film was measured using MCPD-2000 (manufactured by Otsuka Electronics Co., Ltd.) to measure the parallel light transmittance. The transmittance of the adhesive film was calculated by the following procedure. First, each adhesive film is adhered to the glass substrate in such a manner that the adhesive layer of the adhesive film faces the glass substrate to prepare a measurement sample. The thickness of the glass substrate was 1.1 mm. Next, the parallel light transmittance of the glass substrate alone was measured. The measurement is carried out by continuously changing the wavelength of the transmitted light from 3 〇〇 nm to u 〇〇 nm. Next, the parallel light transmittance was measured in the same manner for each of the prepared measurement samples. The transmittance of each adhesive film was calculated by setting the parallel light transmittance of the glass substrate alone to 100 ° / 〇 '. The thickness of the substrate was measured using a micrometer (manufactured by Mitutoyo Corporation). Next, the adhesive films of Examples 1 to 9 were adhered to the entire surface of one side of the twin circle to prepare a sample for the cutting test. The diameter of the wafer is 6吋, and the thickness of the silicon wafer is 4〇〇 " m. Then, each of the above samples was divided into 6.3 mm x 6.3 mm wafers by dicing, and then pattern visibility and workability were evaluated. The cutting device was made using DFD-651 (manufactured by DISCO Corporation). The blade ' uses NBC - ZB2030 - 〇. 〇 4t (manufactured by DISCO Corporation). The thickness of the blade is 4 () / zm. The number of rotations of the blade was set to 30,000 rpm. The moving speed of the blade is set to 10 mm/sec. 0 The visibility of the pattern is observed by a CCD camera mounted on DFD ~~651 to observe the pattern formed on the surface of the wafer. The line width of the pattern is 30// 25 201145372 m. The processability was evaluated by dicing the wafer into a 6.3 mm x 6.3 mm wafer by a cutting device, and measuring the number of wafers peeled off from the adhesive layer by the base. Table 1 shows the pattern visibility and workability in the case where the wafer was divided using the adhesive films of Examples 1 to 8. In Table 1, ◎ indicates that it is very good, and 〇 indicates that it is good. [Table 1] Project unit Example 1 Example 2 Example 3 Example 4 Example 5 Example 6 Example 7 Example 8 Peeling force of the adhesive layer and the substrate N/5cm 0.17 0.22 0.30 0.72 1.62 0.20 0.42 0.81 荽Base * ί Thickness β m 100 100 100 100 100 75 75 75 Physical properties of the film visible wavelength 440nm 74 74 75 75 75 80 81 79 Light transmission wavelength 5 50nm % 83 83 84 85 84 88 88 86 Rate wavelength 700nm 88 89 89 88 88 92 91 91 Evaluation of pattern visibility One-step processability - 〇〇〇 ◎ ◎ As shown in Table 1, the adhesive film of Example 丨 to Example 8 can be adhered In the state, it is determined that the pattern on the germanium wafer is good. As shown in Table 1, even if the ruthenium wafer was cut in a state in which the adhesive films of Examples 1 to 8 were adhered, peeling of the substrate from the adhesive layer can be suppressed. Even in the case of the adhesive film of the ninth embodiment, the pattern on the enamel wafer was judged to be good in the state in which the adhesive film of the ninth embodiment was adhered to the lithographic wafer. Further, even when the enamel wafer is cut in a state in which the adhesive film of the ninth embodiment is adhered to the enamel wafer, peeling of the substrate from the adhesive layer can be suppressed. 26 201145372 In the same manner as in Example 9, an adhesive film was produced using ACF having a thickness of 5 to 3 Å as an adhesive layer. The pattern visibility and workability were evaluated in the same manner as in Examples 1 to 9 for each of the produced adhesive films. For these adhesive films, it was also possible to discriminate that the pattern on the germanium wafer was good. Further, even if the ruthenium wafer is diced by sticking these adhesive films to the ruthenium wafer, the peeling of the substrate from the adhesive layer can be suppressed. Further, in the case of producing an adhesive layer having an adhesive layer obtained by laminating NCF and ACF, the same effect can be obtained. (Comparative Examples 1 to 10) As shown in Comparative Example 1 to Comparative Example 1 of Table 2, "the peeling force of the adhesive layer and the substrate", the "thickness of the substrate", and the "transmittance of visible light" were prepared. 10 different adhesive films. The "peeling force of the adhesive layer and the substrate", the "thickness of the substrate", and the "transmittance of visible light" were measured in the same manner as in the first to the ninth embodiments. The adhesive film of Comparative Example 1 was produced by the same method as the filming of Examples 1 to 8. The adhesive film having a peeling force from the adhesive layer to the substrate was weaker than that of the adhesive films of Examples 1 to 8 by adjusting the formulation of the anthrone-based release agent. The adhesive films of Comparative Example 2 and Comparative Example 3 were produced by the following procedures. First, '100 parts by mass of toluene to 1 part by mass of a phenoxy resin (manufactured by TP-50'Kasei Co., Ltd.), 10 parts by mass of liquid Epoxy resin (EP828, manufactured by Japan Epoxy Resin Co., Ltd.), 15 parts by mass, 27 a 201145372 Imidazole-based latent hardener (NOVACURE 3941HP, Asahi Kasei Co., Ltd. (Asahi Kasei Co" Ltd.), 5 parts by mass of rubber component (RKB 'Resinous Kasei Co., Ltd.), 50 parts by volume of inorganic filler (s〇E2, Admatechs shares) Co., Ltd. (manufactured by Admatechs Co., Ltd.) and 1 part by mass of a decane coupling agent (A-187 'manufactured by Momentive Performance Materials Co., Ltd.), and stirred and prepared A uniform resin solution was obtained. Next, the resin solution was applied to each of the substrates used in Comparative Example 2 and Comparative Example 3 using a bar coater. The substrate coated with the resin solution was placed. 8 (in the heating furnace of rc, make the solvent The resin solution was evaporated to prepare an adhesive film having a PET film and NCF. The thickness of the NCF of the adhesive film produced was 3 m. In Comparative Example 2 and Comparative Example 3, the resin was also applied. Before the solution is applied to the substrate, the release force of the adhesive layer and the substrate is adjusted by applying a release treatment to the surface of the substrate. The release treatment is performed after applying the release agent of the (4) system to the surface of the substrate. The substrate is heated and then dried. The adhesive film having a different peeling force between the adhesive layer and the substrate is prepared by adjusting the blending agent of the mesh system. Comparative Example 4 to Comparative Example 10 The adhesive film was produced by the same method as the adhesive films of Examples 1 to 8 except that a PET film having a thickness of 50 Å was used as the substrate. The ί ratio ^ 4 to Comparative Example 1G was used. In the present invention, the stripping solution is applied to the substrate (1) by applying a stripping treatment to the surface of the substrate to adjust the peeling force of the adhesive layer and the substrate of the 201145372. The release treatment is based on the method of The release agent is applied to the surface of the substrate to heat the substrate and then to the substrate. The method of drying is carried out. By adjusting the blending agent of the oleanone-based stripping agent, an adhesive film having different peeling force between the adhesive layer and the substrate is prepared. First, the adhesive film of Comparative Example u Comparative Example 10 is pasted (9) The sample on the full surface of the surface was prepared for the cutting test. The diameter of the Shiyue wafer was 6 pairs, and the thickness of the broken wafer was "" as in the case of the examples i to 9". Each of the above samples was divided into 6.3 mm x 6.3 mm wafers by dicing, and then pattern visibility and workability were evaluated. Table 2 shows the use of comparative examples! The pattern visibility and workability in the case of dividing the wafer by the adhesive film of Comparative Example 1 . In Table 2, ◎ indicates that ^ is always good '〇 indicates good' △ indicates _ partial defect, χ: L Table 2] Project unit Comparative Example 1 Comparative Example 2 Comparative Example 3 Comparative Example 4 Comparative Example 5 Comparative Example 6 Comparative Example 7 Comparison Example 8 Comparative Example 9 Example 10 Peeling force of the adhesive layer and the substrate m·32!0 Gentry.
29 201145372 如表2所示， 施例9差。比較例 小於 0.17N/ 5cm， 黏著層剝離。 比較例1巾’其加卫性比實施例1至實 1的黏著膜，其黏著層與基材之剝離力 因此當切割步驟結束時，基㈣時會自 比較例2及比較例3中，因兔抖、士 e Ύ因為對波長在440nm以上 700nm以下之光的透射率丨 半小於74/0，故圖案視認性比實施 例1至實施例9差。又，咚於1 β 又比杈例2及比較例3中，其加工 性比貫施例1至實施例9務差。t卜齡如ο — ^ 桷是比較例2及比較例3的黏 著膜’係在基材中添加盔機埴右麻丨m ,, …機填充劑，因此當切割步驟結束 時’有時基材的表面會不平。 比較例4至比較例10中，其圖案視認性比實施例U 實施例9差。比較例4至比較例1〇的黏著膜，其基材厚度 小於75"m，因此當切割步驟結束時’基材有時會自黏著 層剝離。 (實施例10) 在此準備了於表面上形成有複數個凸塊之矽晶圓。矽 晶圓’其直徑為6吁’厚度為〇.6mme凸塊，係藉由將焊 錫預塗於Cu電極的表面而形成。焊錫的厚度為 Cxi電極’其直徑為33mm，厚度為25 #瓜。凸塊的節距為 85以01。凸塊的數量為272個。 接著，與實施例1至實施例8同樣地製作黏著膜。作 為實施例ίο的黏著膜的基材，使用厚度為1〇〇/zm之透明 PET膜。作為實施例1〇的黏著膜的黏著層，使用與實施例 30 201145372 1至κ把例8同樣之NCF。實施例1 〇的黏著層的nc：f厚度， 為30 g m。實施例10的黏著膜中，黏著層與基材之剝離力 為0.72N/ 5cm。實施例10的黏著膜中，對於波長為 440nm、55 0nm及700nm之光的透射率皆在74%以上。 接著’將製作出之黏著膜黏貼於矽晶圓上之形成凸塊 側之一面的全表面上。接著，使用背面研磨裝置 DFG854〇(迪思科股份有限公司（DISCO Corporation)製 ia )研磨石夕a曰圓上未黏貼有黏著膜側之一面，將石夕晶圓的 厚度作成200 v m。背面研磨的條件，粗加工為〇 4 #瓜/ sec ’而精加工為〇 3 "爪/ sec。 實施背面研磨後，剝除黏著膜，調查凸塊之破損及變 形的有無。凸塊之破損及變形的有無，係藉由去觀察利用 搭載於DFG854G上之CCD相機所拍攝下之影像而加以實 施。其結果，於所有凸塊中，皆未確認.到凸塊之破損及變 形。又，背面研磨中亦未發生矽晶圓缺損、破裂之情形。 在磨削面的一部&上，確認到被稱為轉印之加工不均。然 而，加工不均之程度，與一般將背面研磨膠帶黏貼於矽晶 圓的功能面上’然後對矽晶圓進行背面研磨之情況為相同 程度。 以上’利用實施形態說明了本發明，但本發明的技術 範圍並不限定於上述實施形態所記載之範圍内。熟悉本技 術者將明白，可對上述實施形態施加各種變更或改良。由 申請專利範圍之記载可知’該施加有各種變更或改良之形 態亦可包含於本發明的技術範圍内。 31 201145372 應留意的是，對於申請專利範圍、說明書以及圖式中 所示之裝置、系統、程式以及方法中之動作流程步驟 以及階段等各處理之執行順序，只要未特別明示為「在 前」、「先行」等，立只要未將前處理之輸出用於後處理中， 則玎按任意順序實現。關於申請專利範圍、說明書以及圖 示中之動作流程，即使為方便起見而使用「首先」、「接著」 等進行說明，但並非意味著必須按該順序實施。 」 32 201145372 【圖式簡單說明】 第1圖係概略地表示構裝體1 00的剖面的一例。 第2圖係概略地表示晶圓200的一例。 第3圖係概略地表示將晶圓200黏著於治具300上之 階段的一例。 第4圖係概略地表示將黏著膜400黏貼於晶圓2〇〇上 之階段的一例。 第5圖係概略地表示將晶圓200載置於切割裝置51〇 的夾頭工作台520上之階段的一例。 第6圖係概略地表示對晶圓200的表面影像進行攝影 之階段的一例。 第7圖係概略地表示分割晶圓200之階段的一例。 第8圖係概略地表示將基材402自黏著層404剝離之 階段的一例。 第9圖係概略地表示確認基材4〇2已被剝離之階段的 一例。 第1 〇圖係概略地表示將附黏著層之晶片900黏著於電 路基板11 〇上之階段的一例。 第1 1圖係概略地表示將晶片1 2 〇構裝於電路基板1 1 〇 上之方法的其他例。 第12圖係概略地表示將晶片12〇構裝於電路基板11〇 上之方法的其他例。 33 201145372 【主要元件符號說明】 100 構裝體 434 保持部 110 電路基板 5 10 切割裝置 114 電極 520 夾頭工作台 120 晶片 530 對準平台 122 元件 540 攝影部 124 凸塊 550 切削部 130 黏著層 552 刀刃 200 晶圓 560 控制部 202 切割道 562 影像處理部 300 治具 564 驅動部 302 外框 700 附黏著膜之晶片 304 切割膠帶 800 黏著膜 400 黏著膜 900 附黏著層之晶片 402 基材 1162 夾頭工作台 404 黏著層 1164 磨削輪 410 推壓裝置 1172 拾取工具 420 底座 1210 推壓裝置 422 加熱裝置 1220 底座 430 壓頭 1230 陶瓷工具 432 推壓構件 1232 加熱裝置 3429 201145372 As shown in Table 2, Example 9 is poor. The comparative example was less than 0.17 N / 5 cm, and the adhesive layer was peeled off. Comparative Example 1 "The adhesion of the adhesive film to the adhesive film of Examples 1 to 1, the peeling force of the adhesive layer and the substrate. Therefore, when the cutting step is finished, the base (4) will be from Comparative Example 2 and Comparative Example 3, Since the transmittance of light of a light having a wavelength of 440 nm or more and 700 nm or less is less than 74/0, the pattern visibility is inferior to that of the first to the ninth embodiments. Further, in the case of 1β, in comparison with the example 2 and the comparative example 3, the workability was inferior to those of the first to the ninth embodiments. t 卜 如 ο ^ ^ 桷 桷 桷 比较 比较 比较 比较 比较 比较 比较 比较 比较 比较 比较 比较 比较 比较 比较 比较 比较 比较 比较 比较 比较 比较 比较 比较 比较 比较 比较 比较 比较 比较 比较 比较 比较 比较 比较 比较 比较 比较 比较 比较 比较The surface of the material will be uneven. In Comparative Example 4 to Comparative Example 10, the pattern visibility was inferior to that of Example U Example 9. The adhesive films of Comparative Example 4 to Comparative Example 1 had a substrate thickness of less than 75 " m, so that the substrate sometimes peeled off from the adhesive layer when the cutting step was completed. (Embodiment 10) Here, a germanium wafer having a plurality of bumps formed on its surface is prepared. The wafer 'having a diameter of 6 Å' is a 〇.6 mme bump formed by pre-coating solder on the surface of the Cu electrode. The thickness of the solder is Cxi electrode' which has a diameter of 33 mm and a thickness of 25 #瓜. The pitch of the bumps is 85 to 01. The number of bumps is 272. Next, an adhesive film was produced in the same manner as in Example 1 to Example 8. As the substrate of the adhesive film of Example ί, a transparent PET film having a thickness of 1 Å/zm was used. As the adhesive layer of the adhesive film of Example 1, the same NCF as in Example 8 was used as in Example 30 201145372 1 to κ. Example 1 The adhesive layer of ruthenium has an nc:f thickness of 30 gm. In the adhesive film of Example 10, the peeling force of the adhesive layer to the substrate was 0.72 N / 5 cm. In the adhesive film of Example 10, the transmittances for light having wavelengths of 440 nm, 550 nm, and 700 nm were all 74% or more. Next, the adhesive film thus formed is adhered to the entire surface of one side of the bump forming the germanium wafer. Next, one side of the adhesive film side was not adhered to the surface of the shi shi a 曰 使用 , DF DF 。 。 DI 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。. The conditions for back grinding are roughed to 〇 4 #瓜/ sec ' and finished to 〇 3 "claw/sec. After the back grinding, the adhesive film was peeled off, and the presence or absence of the damage and deformation of the bump was investigated. The presence or absence of the damage and deformation of the bump is performed by observing the image captured by the CCD camera mounted on the DFG854G. As a result, it was not confirmed in all the bumps. The damage and deformation of the bumps were not observed. Further, no defects or cracks in the wafer were observed in the back surface polishing. On one of the grinding surfaces, it was confirmed that the processing was uneven. However, the degree of uneven processing is generally the same as that of the back surface of the wafer on the functional surface of the wafer. The present invention has been described above using the embodiments, but the technical scope of the present invention is not limited to the scope described in the above embodiments. It will be apparent to those skilled in the art that various modifications or improvements can be made to the above-described embodiments. It is to be understood that the various modifications and improvements may be included in the technical scope of the present invention. 31 201145372 It should be noted that the order of execution of the processes, stages and other processes in the devices, systems, programs and methods shown in the scope of the patent application, the description and the drawings is not specifically stated as "before". , "first", etc., as long as the output of the pre-processing is not used for post-processing, then it is implemented in any order. The operation flow in the patent application scope, the specification, and the drawings is described using "first", "next", etc. for convenience, but it does not mean that it must be implemented in this order. 32 201145372 [Simplified description of the drawings] Fig. 1 is a view schematically showing an example of a cross section of the package body 100. FIG. 2 schematically shows an example of the wafer 200. Fig. 3 is a view schematically showing an example of a stage in which the wafer 200 is adhered to the jig 300. Fig. 4 is a view schematically showing an example of a stage in which the adhesive film 400 is adhered to the wafer 2 . Fig. 5 is a view schematically showing an example of a stage in which the wafer 200 is placed on the chuck table 520 of the cutting device 51A. Fig. 6 is a view schematically showing an example of a stage of photographing a surface image of the wafer 200. Fig. 7 schematically shows an example of the stage of dividing the wafer 200. Fig. 8 is a view schematically showing an example of a stage in which the substrate 402 is peeled off from the adhesive layer 404. Fig. 9 is a view schematically showing an example of a stage in which the substrate 4〇2 has been peeled off. The first drawing schematically shows an example of a stage in which the wafer 900 with the adhesive layer is adhered to the circuit board 11 . Fig. 1 is a view schematically showing another example of a method of mounting a wafer 1 2 on a circuit board 1 1 〇. Fig. 12 is a view schematically showing another example of a method of mounting the wafer 12 on the circuit board 11A. 33 201145372 [Description of main component symbols] 100 structuring body 434 holding portion 110 circuit substrate 5 10 cutting device 114 electrode 520 chuck table 120 wafer 530 alignment platform 122 element 540 photographic portion 124 bump 550 cutting portion 130 adhesive layer 552 Cutting edge 200 Wafer 560 Control part 202 Cutting path 562 Image processing part 300 Fixing piece 564 Driving part 302 Outer frame 700 Adhesive film wafer 304 Cutting tape 800 Adhesive film 400 Adhesive film 900 Adhesive layer wafer 402 Substrate 1162 Chuck Workbench 404 Adhesive layer 1164 Grinding wheel 410 Pushing device 1172 Picking tool 420 Base 1210 Pushing device 422 Heating device 1220 Base 430 Indenter 1230 Ceramic tool 432 Pushing member 1232 Heating device 34