TW201104004A - High pressure RF-DC sputtering and methods to improve film uniformity and step-coverage of this process - Google Patents

Abstract

Embodiments of the invention generally provide a processing chamber used to perform a physical vapor deposition (PVD) process and methods of depositing multi-compositional films. The processing chamber may include: an improved RF feed configuration to reduce any standing wave effects; an improved magnetron design to enhance RF plasma uniformity, deposited film composition and thickness uniformity; an improved substrate biasing configuration to improve process control; and an improved process kit design to improve RF field uniformity near the critical surfaces of the substrate. The method includes forming a plasma in a processing region of a chamber using an RF supply coupled to a multi-compositional target, translating a magnetron relative to the multi-compositional target, wherein the magnetron is positioned in a first position relative to a center point of the multi-compositional target while the magnetron is translating and the plasma is formed, and depositing a multi-compositional film on a substrate in the chamber.

Description

201104004 VI. Description of the Invention: [Technical Field of the Invention] Embodiments of the present invention generally relate to methods and apparatus for forming metal and dielectric layers. More particularly, embodiments of the present invention are directed to methods and apparatus for forming metal gates and associated dielectric layers. [Prior Art] The integrated circuit includes more than one million microelectronic components such as an electric crystal, a capacitor, and a resistor. One type of integrated circuit is a field effect transistor (e.g., a complementary metal oxide semiconductor (CMOS) field effect transistor) formed on a substrate (e.g., a semiconductor substrate) and cooperatively performing various circuit functions. The CM〇s electrical aa body includes a gate structure disposed in the source region and the drain region of the substrate. The gate structure generally includes a gate electrode and a gate dielectric layer. The gate electrode is located above the gate dielectric layer to control the flow of the charged carrier in the channel region of the gate region and the source region under the gate dielectric layer. To accelerate the transistor speed, the gate dielectric layer is composed of a material having a dielectric constant greater than 4 Å. This dielectric material is referred to herein as a high dielectric constant (k) material. The gate dielectric layer is composed of a dielectric material such as germanium dioxide (Si〇2), or a high-W electrical material having a dielectric constant greater than 4.0, such as nitrogen oxides, germanium nitride (SiN), or antimony oxide. (Hf〇2), bismuth ruthenate (HfSi〇2), bismuth oxynitride (HfSi0N), lead oxide (Zr〇2), bismuth citrate (ZrSi〇2), barium titanate (BaSrTi03 or BST), Lead zirconate titanate (Pb(ZrTi)〇3 or ρζτ). It should be noted, however, that the film stack structure may comprise a film layer formed of other materials. 201104004 The gate stack structure may also include a metal layer formed on the high-k dielectric to replace the conventional polysilicon. The metal layer includes titanium nitride (TiN), titanium aluminum (TiA丨), tantalum nitride (WN), carbonization (HfC), nitriding (HfN), complete fluorite (FUSI), or complete ; 夕夕化的金属闸极. In addition, a high mobility interface layer is placed between the substrate and the high-k dielectric layer. A number of methods are available for forming CMOS high-k/metal gate stack structures, such as the replacement of the interpole mode, the gate fim appr〇ach, and the gate last approach. The gate structure of a field effect transistor fabricated in a high-k gate dielectric/back gate manner includes a series of processing steps (e.g., deposition of multiple layers). In the formation process of the gate stack structure, not only a conformal film but also a good quality interface layer is required between the layers. In conventional CMOS fabrication, the substrate is routed through a tool room with various reactors coupled to it. The process of passing the substrate through the tool requires the substrate to be removed from the vacuum environment of a tool and transferred to the vacuum environment of the second tool at atmospheric pressure. In the atmosphere, the substrate is exposed to mechanical and chemical contaminants such as particulates, moisture, etc., which can damage the gate structure to be fabricated and may form an improper interface layer, such as a native oxide, between the layers during transport. As the gate structure becomes smaller and/or thinner to increase the component speed, the adverse effects of forming the interface layer or contaminants become greater. In addition, the time it takes to transfer the substrate between cluster tools reduces the productivity of the manufacturing field effect transistor. In addition, the fabrication process of the gate stack structure includes a chemical vapor deposition (CVD) process to form a metal layer. However, when the metal of the closed-pole stack structure is formed in the portion of the 201104004 portion, the residual particles from the organometallic precursor contaminate the underlying dielectric layer, so as to adversely affect the dielectric properties of the gate dielectric layer. In addition, when the transistor size is reduced to less than 45 nanometers (nm) and has a higher aspect ratio, achieving sufficient film uniformity and step coverage will be difficult. Therefore, this art requires methods and apparatus to form a gate stack structure with improved properties. SUMMARY OF THE INVENTION In one embodiment of the present invention, a high voltage radio frequency (RF) direct current (dc) physical vapor deposition (PVD) chamber having a double loop electromagnetic comprising an asymmetric magnetic ring, a low profile cover ring, and a deposition ring is disclosed Tube, and pedestal capacitance regulator. In another embodiment of the invention, a method for depositing a metal film is disclosed. The method includes flowing a high pressure gas into a chamber, electrically connecting a radio frequency (RF) and a direct current (DC) power source of the sputtering target, igniting the plasma from the gas, using the electromagnetic tube, forming a dense plasma, adjusting the pedestal to match the rf A power source, and a metal film is deposited on the substrate in the chamber. [Embodiment] Embodiments of the present invention generally propose a processing chamber for performing a physical vapor deposition (P V D) process. In one embodiment, the processing chamber is designed to deposit a predetermined material using a radio frequency (RF) physical vapor deposition (PVD) process. The processing chamber is particularly beneficial for depositing multiple component films. The design features of the processing chamber include: improved RF feed configuration 'to reduce any 7 201104004 at standing wave effect, improved electromagnetic tube design to enhance RF plasma uniformity, deposited film composition and thickness uniformity; Substrate biasing structure for improved process control; and improved process kit design to improve the uniformity of the gauge 1 near the critical surface of the substrate, thereby improving process uniformity and reproducibility* 1A The illustrated semiconductor processing chamber has an upper processing set, a member 108, a process kit 15 and a base assembly 12 that are fully configured to process the substrate 1〇5 disposed in the processing zone 110. The process kit 15A includes a single piece ground shield 160, a lower process set 165, and an isolation ring assembly 18A. As noted, the processing chamber 100 includes a sputtering chamber, also referred to as a physical vapor deposition or PVD chamber', and is capable of depositing a single- or multiple component material from the target 132 onto the substrate 105. The processing chamber 1 can also be used to deposit aluminum, copper, nickel, platinum, rhodium, silver, chromium, gold, molybdenum, niobium, tantalum, knob, tantalum nitride, carbonization, tantalum, titanium nitride, tungsten, and nitride. Tungsten, tantalum, aluminum oxide, cerium oxide, nickel platinum alloy, titanium, and/or combinations thereof. The processing chamber is available from Applied Materials, Inc. of Santa Clara, California. It should be understood that other processing chambers provided by other manufacturers also benefit from one or more embodiments of the present invention. The processing chamber 1GG includes a chamber to body hull having a side wall 1G4, a bottom wall 1 () 6 and an upper processing assembly 108 that encloses a processing zone or a plasma zone. The cavity to body 101 is typically fabricated from a welded stainless steel sheet or a single piece of aluminum. In an embodiment, the side wall comprises aluminum and the bottom wall comprises a stainless steel plate. The side wall 丄 generally includes a slit valve (not shown) for the substrate 1〇5 to enter and exit the processing chamber 1〇〇. The components of the processing assembly 108 above the processing chamber 100 are identical to the ground shield 8 201104004 160. The base assembly 120 and the cover ring 17 define the plasma formed in the processing zone n〇 in the region above the substrate 1〇5. The base assembly 120 is supported from the bottom wall 1〇6 of the chamber 1〇〇. The susceptor assembly 120 supports the deposition ring 5〇2 and the substrate 1〇5 during processing. The base assembly 120 is coupled to the bottom wall 1〇6 of the chamber 1〇〇 by a lift mechanism 122 that is configured to move the base assembly 120 between the upper processing position and the lower transfer position. In addition, when in the lower transfer position, the lift pin 123 moves through the base assembly 120 and the substrate is spaced from the base assembly i 2 to assist the substrate and the processing chamber. 1 Exchanging the substrate transfer mechanism (for example, a single-knife robot (not shown). The bellows 124 is usually disposed between the base assembly 12 and the chamber bottom wall ι6 to separate the processing area 11 〇 And the internal space of the base assembly 12 and the outside of the chamber. The base assembly 120 generally includes a support member 126 that is closely attached to the platform housing 128. The outer member is made of a metal material such as stainless steel or aluminum. Illustrated) is generally disposed within the platform housing 128 to thermally condition the branch member 126. The base assembly to which the embodiment is described is described in U.S. Patent No. 5,5G7, issued to Davenport et al. , 499, which is hereby incorporated by reference. The slab 126 includes a substrate receiving surface 126 ′ having a substrate receiving surface 127 ′ for receiving and supporting the substrate 105 during processing, the substrate receiving surface being substantially parallel The relief surface 133 of the dry material 132. The support member 126 also has a peripheral edge The overhanging support member 126 of the substrate 1G5 may be an electrostatic chuck, a ceramic body, a heater or a combination thereof. In an embodiment, the support member 126 is an electrostatic chuck, which includes the embedded body of 201104004. The conductive layer or the dielectric body of the electrode 126 A. The dielectric body is typically made of a highly thermally conductive dielectric material such as pyrolytic boron nitride, nitride, tantalum nitride, aluminum oxide or an equal material. Other aspects of the 1 2 〇 and the support member i 26 will be further described. In the embodiment, the conductive layer 126A is configured to apply a direct current (dc) voltage to the conductive layer 126A by the static head power supply 143. The substrate 105 on the substrate receiving surface 127 is electrostatically clamped, thereby improving heat transfer between the substrate 105 and the support member 126. In another embodiment, the impedance controller 141 is also coupled to the conductive layer 126A so that the voltage can be Maintaining on the substrate causes the plasma to interact with the surface of the substrate ι 5. The chamber 100 is controlled by a system controller 190, which is typically designed to assist in the control and automated processing of the chamber (10), and generally includes central processing Unit (u) (not expected), g memory (not Display) and support circuit (or 1/〇) (not 2). The CPU can be any type of computer processor used for industrial setting to control the system function, substrate movement, chamber process and support hard. 2: such as sensors, robots, motors, etc.), and monitoring processes (such as substrate support: cattle temperature, power supply variable, chamber process time, and signal body. ^t body connected to CPU' and can be one or A variety of easy-to-obtain memory such as random access memory (RAM), read-only memory (job), soft memory or any other near-end or remote digital memory. Software is encoded and stored in memory. To indicate (4). The support circuit is also connected to the CPU, and the auxiliary circuit includes the ancient m xiao by the conventional way to support the processor. Support into the secondary storage, power supply, clock circuit, wheel, road, secondary system, etc. System controller 19. The readable path 10 201104004 (or computer command) determines the task to be performed on the substrate. Preferably, the program is a H4 readable software of the system (IV), which includes encoding, movement execution and control for monitoring related tasks, and various processing method tasks and method steps performed in the processing chamber t100. For example, the controller just contains the program code, which includes the substrate positioning command set, (4) the operating base assembly 120; the airflow control command set 'used to operate the airflow control room to set the flow of the reducing gas to the chamber 100; the air pressure control An instruction set for operating a throttle or gate valve to maintain a control set of chambers 1 1 for controlling a base unit 12 or a temperature control system (not shown) to individually set a substrate or The temperature of the sidewall ι〇4; and the process monitoring command set for monitoring the process in the chamber 1〇〇. The chamber 100 also contains a process kit 15' that contains various components that can be easily removed from the chamber 100, for example, to clean (4) the surface of the (4) deposit, replace or repair the invaded (four) pieces, or to modify the chamber i (10) Used in other processes. In one implementation, the process kit 150 includes a spacer ring assembly, a ground shield 60, and a ring assembly 168 for placement at the peripheral edge 129 of the branch member 126 that terminates in front of the overhanging edge of the substrate 1G5. Figure 1B is an isometric view of the processing chamber 1 面 which is contiguous with the processing position of the cluster tool 103. The cluster tool 1〇3 may also include other processing chambers (which are suitable for one or more processing steps on the substrate before or after the deposition process in the processing chamber). The sample cluster tool 103 includes a C-'-system from Applied Materials, Inc., Santa Clara, California. The cluster tool (8) includes one or more 201104004 load lock chambers (not shown), one or more processing chambers, and a cooling chamber to (not shown), all attached to the central transfer chamber 103A. In one example, the cluster tool 103 has a processing chamber configured to perform a number of substrate processing operations, such as cyclic layer deposition chemical vapor deposition, physical vapor deposition (PVD), atomic layer deposition (ALD), etching, Prewash, degassing, annealing, orientation and other substrate processing. A transfer tool (e.g., a robot (not shown)) disposed in the transfer chamber 103A is used to transport the substrate into and out of one or more chambers of the attachment cluster tool 103. Referring to FIGS. 1A and 2, in one embodiment, the processing chamber 丨〇 includes an isolation ring assembly 180 including an isolation ring 250 disposed adjacent the target 132, the edge 216 of the ground shield 160, and the target isolator 136. And support ring 267. The spacer ring 250 extends and surrounds the outer edge of the sputtering surface 133 of the target 132. The spacer ring 25A of the spacer ring assembly 18A includes a top wall 252, a bottom wall 254 and a support edge 256 that extend outwardly from the top wall 252 of the spacer ring 250. An example of a sample isolation ring design is described in the co-pending U.S. Patent Serial No. 12/433,315, the disclosure of which is incorporated herein by reference. The top wall 252 includes an inner perimeter 258, a top surface 132 disposed adjacent the dry material 132, and a perimeter 262 disposed adjacent the target isolator 136. The support edge 256 includes a bottom contact® 264 and an upper surface 266. The bottom contact surface 264 of the fulcrum 256 is supported by a spring member 267A (e.g., a compression metal spring member) that couples the support ring 267 to bias the spacer ring toward and against the surface of the target isolator 136. The use of the spring fitting 267A helps to reduce the isolation stack between the % 25G and its branch parts and the Sputter Table® 133, 12 201104004 so that the top surface 260 of the spacer ring 25 0 and the sputtering surface 133 can indeed maintain a predetermined gap . The gap between the top surface 260 and the sputter surface 133 is important to avoid that the electricity formed in the processing region 110 extends into the gap and causes sealing and/or particulate problems to occur. The bottom wall 254 includes an inner perimeter 268, a perimeter 270, and a bottom surface 272. The inner circumference 268 of the bottom wall 254 and the inner circumference 258 of the top wall 252 constitute a single surface. A vertical groove 276 is formed at a turning point 278 between the periphery 270 of the bottom wall 254 and the bottom contact surface 264 of the branch side 256. The step 221 of the shield 160 in combination with the vertical trench 276 provides a tortuous gap to prevent surface material bridging between the spacer ring assembly 180 and the shield 16 to maintain electrical discontinuities while still protecting the chamber wall 1 〇 4, 1 〇 6. In one embodiment, the spacer ring assembly 180 provides a gap between the target 132 and the grounded component of the process kit 150 while still providing chamber wall shield. The stepped design of the spacer ring assembly 180 allows the shield 丨6〇 to be centered relative to the joint 220. It is also the mounting point for the splicing shield and the alignment features for the target 132. The step design also eliminates the target The line_of_site to the support ring 267 is deposited, eliminating the effects of arcing in this area. In one embodiment, the spacer ring assembly 180 has a blasted surface texture or an arc sprayed film deposited thereon to achieve at least 18 〇 ± 2 〇 micro 吋 (0.0041-0. 〇〇 5 丨 mm (mm)) Surface roughness (Ra value) increases film adhesion. The support edge 256 allows the spacer ring assembly 18 to be "with respect to the joint 22" while eliminating the wire! 32 to the grounding 16G straight line deposition, thereby eliminating the effects of stray plasma. In one embodiment, the support ring 267 includes an alignment pin (not shown) of the 201104004 s series that positions/aligns a series of slits (not shown) in the shield 160. The inner face 214 of the shield 160 generally surrounds the sputter surface 133 of the sputter target 132 that faces the support 126 and the peripheral edge 126 of the support 126. The shield 160 covers and shields the sidewalls 〇4 of the chamber 1 to reduce the deposition of deposits from the radiant surface 133 of the squirting dry material 132 onto the components and surfaces behind the shield 1600. For example, the shield] 6 〇 protects the surface of the support member 126, the overhanging edge of the substrate 1〇5, the side wall 104 of the chamber, and the bottom wall 1〇6. Cover Assembly Area The upper processing assembly 108 also includes a radio frequency (RF) power supply 18, a direct current (DC) source 182, a connector 1, a motor 193., and a cover assembly 13A. The cover assembly 130 generally includes a target 132, a solenoid system 189, and a cover wrap 191. As shown in Figures 1 and 1 , the upper processing component 1〇8 is supported by the side wall 104 when in the closed position. The ceramic wire separator 136 is written between the spacer ring assembly 180 and the cover member 1 3 〇 target i 32 and the joint 丨〇 2 to prevent leakage therebetween. The joint 102 is in close contact with the side wall 丨〇4 and is configured to assist in removing the upper processing assembly 108 and the spacer ring assembly 18. In the processing position, the target 132 is disposed adjacent the joint 1〇2 and exposed to the processing chamber to the treatment zone 11〇 dry material containing material deposited onto the substrate 105 during or sputtering. A spacer ring assembly 18 is disposed between the target 132 and the shield 160 and the chamber body 1〇 to electrically isolate the dry material 132 from the shield 160 and the chamber body 1〇1. During processing, the target is biased against the processing region of the processing chamber (e.g., chamber body 101 and connector 102) by a power source disposed at RF power supply 丨8丨 and/or DC 14 201104004 (DC) source 182 Material 132. In combination with sputtering of multiple components (such as sputtering of titanium and aluminum, or titanium and tungsten, etc.), Xianxin delivers RF energy and DC power to the target 132 during the high-voltage PVD process, which is significantly more than the traditional low-voltage DC plasma processing technology. Process advantages. Moreover, in one embodiment, combining RF and DC power sources allows for a smaller overall RF power during processing than for an RF source only, which helps to reduce plasma damage to the substrate and improve component yield. . In an embodiment, RF power supply 181 includes an RF power source 181 and an RF match 181B that is configured to efficiently deliver RF energy to target 13 2 . In one example, RF power source 181A can generate RF current at a frequency of from about 13.56 megahertz (MHz) to about 128 MHz at a power of about 仟 to about 5 watts. In one example, DC power supply 182A of source 182 can deliver dc power of about 仟 to about 仟 watts. In another example, RF power source 181A can generate an RF power density of from about 0 to about 33 watts per square meter at the target, and DC source 182 can deliver a power density of from about 0 to about 66 watts per square meter. . During processing, gas source 142 supplies a gas (e.g., argon) through conduit 144 to processing zone U0. Gas source 142 contains a non-reactive gas (e.g., argon, helium, neon, or xenon) which is capable of vigorously impacting and sputtering material from target 132. Gas source 142 also includes a reactive gas, such as one or more oxygen-containing or nitrogen-containing gases, which are capable of reacting with the sputter material to form a layer on the substrate. The used process gases and by-products exit the chamber 100' via the exhaust port 146. They receive the used process gas and direct the used process gas to the exhaust conduit 148 of the gate valve 147 having an adjustable position to control the chamber. 1〇〇15 201104004 The repeated force in the processing area m. Row _(4) is connected to one or more exhaust pumps such as cryopumps. The pressure of the sputtering gas in the chamber 1 处理 during processing is again sub-atmospheric level such as a vacuum environment (e.g., a pressure of about mA to about 400 mTorr). In the embodiment, the pressure is scoop. The ear is up to about 100 mTorr. The plasma is formed from the gas on the substrate 〇5 and dry #132. The ion acceleration in the electropolymer accelerates toward the dry material "2' causes the material to move out of the target 132. The material is deposited on the substrate. Referring to circle 3A, the cover cladding 191 generally includes a conductive wall 185, a central feeder 184, and a shield 186 (Fig. 1B). In this configuration, the conductive J 1 85, the central feed The hopper! 84, the target j 32 and a portion of the motor (7) 3 enclose the back side region 134. The back side $ 134 is a sealed area that is located on the back side of the target 132 and is typically filled with flowing liquid to remove the target 132 during processing. The heat generated during processing. In one embodiment, the conductive wall and central feeder 184 are configured to support the motor 193 and the electromagnetic tube system 189' such that the motor 193 can rotate the electromagnetic tube system ι89β in one embodiment. Motor 193 utilizes dielectric layer 193B (eg, Delrin, G10, or Ardel) electrical Isolating the rf or DC power delivered by the power supply. Shield 186 includes one or more dielectric materials that are arranged to enclose and prevent RF energy delivered to target 132 from interfering with and affecting other processing disposed in cluster tool 1〇3. Chamber (Fig. iB). In one configuration, the shield I% contains Delrin, G10, Ardel, or other similar material, and/or ground foil metal RF shield. Power Delivery 201104004 In a consistent example, as shown in Figure 1A During processing, during operation, the capacitive bonding target 132 provides power using RF or ultra high frequency (Vhf) energy during plasma processing to ionize and dissociate the processing gas near the sputtering surface 133 of the target 132 to ionize The gas is sputtered from the biased target material. However, as the processing chamber expands to a substrate of 300 mm and larger, the resulting rF field will essentially be due to the limited reactor volume and boundary conditions on the electrode. The standing wave is formed in the processing region 11 at a typical frequency of RF and VHF. The right electrode size becomes matched to the excitation wavelength, and the electromagnetic effect caused by the standing wave will cause unevenness of the deposited film on the plasma and the substrate. with Slurry unevenness generally affects the thickness and properties of the film deposited in the pvD reactor, or the process uniformity of the plasma processing chamber. Uneven films can cause mid-to-edge, edge-to-edge unevenness, and in some cases, more Causes no functional components.

In some cases, standing wave effects and associated plasma non-uniformities can be improved by shaping the electrodes (e.g., pvd targets), lowering the RF frequency, and adjusting processing parameters (e.g., chamber pressure and/or combinations thereof). However, when the processing chamber size is increased to reflect the large substrate requirements, simply amplifying the above countermeasures against standing wave effects and plasma non-uniformity may be insufficient and/or result in undesirable plasma processing conditions. Salt & delivering RF power to the treatment pressure and asymmetry to the electrode will further induce and worsen the inhomogeneity. Asymmetric transmission of RF power will cause loss

The delivered RF power spread across the surface of the target to cause the slurry to be uneven. The first shows the flow of the asymmetrically placed power conveying surface. As shown, 17 201104004 RF power delivery point "F" deviates from the center "m" of the target 132, a distance "〇". In this configuration, the current from the power delivery point, F" is uneven. Because the surface of the target will flow through different distances, as indicated by the currents in the opposite directions c12, C11, the edges of the target 132 have different path lengths. The uneven flow of the letter will be processed by $11〇 causing the asymmetric standing wave' to call the pulp and deposit the uneven sentence. In an embodiment, as shown in Figures 3A & 3C, the rf power is delivered to a central feeder 184 that is disposed at the center of the target 132, m" or the central axis. In this configuration, during processing The RF power source of the RF power supply $i8i, the RF energy delivered by the 181A is configured to flow through the central feeder m and the conductive wall 185 to the dry material 132. In an embodiment, as shown in Figures 3A and 3C The central feeder 184 is axially symmetrical at the center of the dry material 132. In an embodiment, the aspect ratio of the central feeder m is configured such that the surface 184 of the upper surface of the stomach 184 is fed centrally (e.g. The RF energy delivered as shown in Figure 3A will allow the lamp energy to be delivered to the conductive wall 185 and/or the lower surface of the central feeder 184 to 132. The RF current is typically along the arrow 3A, 'c' Refers to the flow of the road scale. In this case, the 耵 current 2 from the central feeder 184, the symbol C21) is a uniform sentence, so that the electrical installation is a uniform sentence to reduce and/or remove the RF standing wave effect. In some embodiments, the length of the central feeder 184, A" (e.g., diameter, 'D2") or diameter aspect ratio is at least about 1: . 15 diameter aspect ratio of at least about Μ or more The central feeder 184 can be made more uniform. In an embodiment, the inner diameter of the central feeder 184 ^ 18 201104004 diameter "D2" should be as small as possible, such as diameter ... to about 6 o'clock, or about ... provide a small inner (four) to help maintain the predetermined diameter aspect ratio, and It will not increase the length of the central feeder 84. In some configurations, the length "A" of the central feeder 曰 (8) is, for example, about 54 ) 54_) to about 12 兮 (304.8 mm), or about 4 吋 (1 〇 16 mm). The amount of violent or VHF current that penetrates the conductive object is a function of current frequency and material properties. The conductivity of the material comprising the central feeder 184 and/or the coating placed on the surface of the central feeder 184 affects its ability to distribute the delivered or VHF current. In one example, the central feeder (8) and/or the conductive wall 185 are! Lv (such as the secret 1T6 峨 austenitic non-recorded steel material composition. Therefore, in some embodiments, the definition of surface area aspect ratio to design a predetermined RF power delivery uniformity of the t-feeder core surface area wide The ratio is defined as the ratio of the length "A" of the central feeder 184 to the surface area that is configured to propagate the lamp power along it. In one example, the configuration shown in Figures 3A and 3C, the aspect ratio is the length" A" relative diameter 〇ι and D2 constitute a surface area (such as π 〇 1 Α + π Ι) 2 Α) 6 匕 rate, rf current flows along it in the example, the central feeder i 84 centered has an aspect ratio of about 〇. 〇〇 1 / ugly to about 0.025 / mm, for example about 〇〇 i6 / mm. In another example, the centered central feeder 184 is comprised of 6 〇 61 6 6 mings having a surface area ratio of about 0.006 per coffee, wherein the length "A" is about 1 〇 16 匪, diameter, 〇 ι ” It is about 25.4 mm' diameter and 'D2' is about 33 mm. It should be noted that although the 帛3C diagram shows the annular section of the central feeding device, the scope of the present invention is not limited to this configuration. In some embodiments, the cross section of the central feeder 184 extending between the upper surface H84A and the lower surface 184B may be 19 201104004

The Moonlight Substantially Uniform Distribution RF should take care of the upper surface 184A square, hexagonal or other shaped carrier surface, with power to the conductive walls 185 and/or target 132. The lower surface 184B does not need to be parallel to each other, so the length "A" can be defined as the minimum distance between the upper surface 1 84A and the lower surface 1 84B. The electromagnetic tube assembly is effectively sputtered, and the electromagnetic tube system 189 is disposed on the back surface of the target 132 in the upper processing unit 1 8 to generate a magnetic field in the processing area 110 beside the sputtering surface 133 of the target 132. Collect electrons and ions' to increase plasma density and speed up sputtering. In accordance with an embodiment of the present invention, the solenoid system 189 includes a source solenoid assembly 42A that includes a rotating plate 413, an outer magnetic pole 421, and an inner magnetic pole 422. The rotating plate 413 generally allows the positioning of the magnetic field generating components in the source solenoid assembly 420 to move relative to the central axis 194 of the chamber 100. 4A, 4B, and 4D illustrate the source electromagnetic tube assembly 42A, viewed from the side of the sputtering surface 133 of the target 132, with its central axis 194 disposed at a first radial position. Figure 4C illustrates the source electromagnetic tube assembly 420 disposed at a second radial position relative to the central shaft 194, which is different from the first radial position and is obtained by adjusting the steering and speed as described below. The rotating plate 4丨3 is generally adapted to pivot and vertically couple the outer magnetic pole 421 having a first magnetic polarity and the inner magnetic pole 422 having a second magnetic polarity toward the vertical direction, and the second magnetic polarity is opposite to the first magnetic polarity. The gap 426 separates the inner magnetic pole 422 from the outer magnetic pole 421, and each magnetic pole typically includes one or more magnets and pole pieces 429. A magnetic field extending between the two magnetic poles 421, 422 forms a plasma region "P" (Fig. 3A, 4D) at a first portion of the sputtering surface adjacent to the target 132. The plasma zone "P" constitutes a high density plasma 20 201104004 zone 'which typically follows the shape of the gap 426. In the case of the known example, 'the electromagnetic tube system 189 is shown in Figure 4A-4D. It is a non-closed loop material (such as an open circuit design) to reduce the electrical intensity of the „『,p” shape, and then compensate for the RF energy from the RF power supply 181 to send (four) material U2 to produce higher ionization power i Note that rf drive plasma is more effective than DC drive power destruction to increase the atoms in the electropolymer (such as gas atoms and sputum atoms) Ionization, because the application of energy more effectively grounds the electrons in the plasma, and other electron-electrical interactions increase the electron energy and increase the degree of ionization in the plasma. In general, "closed loop, electromagnetic tube structure is formed such that the magnetic pole of the electromagnetic tube surrounds the inner magnetic pole of the electromagnetic tube and forms a gap between the magnetic poles, which is a continuous loop. In the closed loop configuration, the injection and re-entry The magnetic field across the surface of the target forms a closed loop "pattern" to confine the electrons to a closed loop pattern near the surface of the target, which is often referred to as a track, pattern. The closed loop electromagnetic tube configuration can limit electrons and produce high density plasma near the sputtering surface 133 of the target 132 to increase the sputtering rate. In the Kaitan Road electromagnetic officer structure, the electrons trapped between the inner and outer magnetic poles will migrate, leak and escape the B field generated at the open end of the electromagnetic tube, which is reduced by the electric and sub-limits. There is electronics for a short time. Surprisingly, it has been found that the use of the open loop electromagnetic tube configuration in conjunction with the RF and DC sputtering multiple component targets can significantly improve step coverage and improve material composition uniformity across the surface of the substrate. In the embodiment of the electromagnetic system, the 21 201104004 rotating shaft 193A driven by the motor J 93 extends along the central axis 194 and supports a radial displacement mechanism 41 0 , which includes a rotating plate 4 1 3 , The counterweight 4 1 5 and the source solenoid assembly 420. When the motor 193 is rotated in different directions R, R2 (Fig. 4B, 4C), the radial displacement mechanism 410 moves the source electromagnetic tube assembly 420 toward the complementary radial direction, such as radially toward or away from the central axis 194 (ie, Figure 4A is a component symbol "S"). The shot will effectively heat the material 1 3 2 during processing. Therefore, the back side region 134 is sealed behind the target 132 and filled with the cooling water liquid, which is cooled by a water pipe (not shown) and a water pipe for recirculating cooling water. The rotating shaft 193A penetrates the back chamber ι via a rotary seal (not shown). A solenoid system 丨89 including a radial shifting mechanism 410 is immersed in the liquid in the backside region 134. Figure 4A is an isometric view of one embodiment of a solenoid system 189 generally including a cross arm 414 that secures its center to a rotating shaft 193A. The end of the cross arm supports the counterweight 415. The other end of the cross arm 414 (which traverses the shaft 194 from the counterweight 415) supports a pivot 4 12 or a rotary bearing for rotatably supporting the source solenoid assembly 42 to rotate about the offset vertical pivot 419. In one configuration, the pivot 419 is substantially parallel to the axis of rotation 194. In this configuration, the electromagnetic tube 42〇 on the cross arm 414 allows its relative rotational center axis 194 to oscillate toward different and complementary radial directions. The complementary movement is due to the source electromagnetic tube, and the centroid of the member 420 is separated by a distance from the pivot 4 i 9 . Therefore, when the motor 193 rotates the cross arm 414 and the source solenoid assembly 42〇, the centripetal acceleration acting on the source solenoid assembly 420 causes it to be oriented in the direction or other direction about the pivot 419 (depending on the direction in which the motor 193 is adjusted) ) Turn 22 201104004. The center of the source electromagnetic tube assembly 420, + 〜 疋 为 为 为 源 源 源 源 源 源 源 源 源 源 源 源 源 源 源 源 源 源 源 源 源 源 源 源 源 源 源 源 源 源 源 源 源 源 源 源 源 源 源 源 源 源 源 源194 » : Steering of the rotating shaft 139 eight around the rotating shaft 194 and the whole

System 189 exchanges two positions about the turn 1 of the spindle (9). As shown in the top plan view of Fig. 4D, when the rotating shaft slewing cup 139A rotates the traverse arm 4 1 4 in the counterclockwise direction R about the rotating shaft 1 94, the inertia and resistance will cause the source electromagnetic tube assembly 420 to be tilted in the reverse direction. & M > The ten-way wraparound pivot 419 is rotated until the bumper 416 fixed to the source solenoid assembly 420 is sprayed on the side of the cross arm 414. In this processing configuration or electromagnetic f processing position, the source electromagnetic tube assembly is at a radially outward position near the edge of the dry material 132, such that the source electromagnetic tube assembly 420 can be ridiculously visibly visibly. Also & plasma The substrate 1〇5 is sputter deposited or sputter-etched. This position refers to the "outward" position of the solenoid or the first position. Alternatively, as shown in the top plan view of FIG. 4C, when the rotating axle ship rotates the cross arm 414 counterclockwise to the rotating shaft 194, the inertia and resistance will cause the source electromagnetic tube assembly 42 to know the clockwise direction around the pivot 419. Rotate until the bumper 417 fixed to the source solenoid assembly aligns with the other side. In this configuration, the source solenoid assembly side is placed in its inwardly facing position away from the edge of the trim 132 and adjacent the spindle 194 such that the source solenoid assembly 420 can be electrically connected to the center of the dry material [to clean this area. This position refers to the electromagnetic tube, inward, position or second position. In some embodiments the 'source solenoid assembly is an unbalanced solenoid. In the embodiment, the relative imbalance is small and close. Generally, the 'unbalance' is defined as the total magnetic field strength throughout the outer magnetic pole 412 or 23 201104004 magnetic flux divided by the ratio of the total magnetic field strength or magnetic flux throughout the inner magnetic pole 422. It has been found that maintaining the imbalance between the external and internal field strengths between about 0.5 and about j5 improves the RF deposition process of the multicomponent film. In one embodiment, the ratio of the outer field to the inner field strength imbalance is from about 18:17 to about 20:16. The magnetic field imbalance causes the outer magnetic pole 42 1 to emit ___ _ ^ ^ ^ 105 and direct the ionized sputter particles to the substrate ι 5 . Since the source solenoid assembly 420 extends over a wide target area, the plasma zone "p" can be enlarged and the overall plasma strength produced by the RF and DC power delivery to the target 132 can be reduced. However, the source solenoid assembly 420 produces a higher density of electrical energy in the plasma region "p" than the portion of the target 132 that is not directly adjacent to the source solenoid assembly 42A. The dry material 132 is mainly damped in the source electromagnetic tube assembly 42, and the formed plasma acts as a fraction of the sputtered particle ionization domain. The ionized particles are at least partially guided by the unbalanced magnetic field to the substrate in the embodiment, as described above. As shown in Figures 4A and 4D, the source electromagnetic tube assembly 420 is again in accordance with the non-closed query <4<4> In this configuration, the non-closed F-closed σtan road design is curved, and its radius D (4th and 4D circles) extends from the center of the grasper seven to the center of the gap 426. S is set in the first position ^ ^ L electromagnetic e 'curve adjustable size and sigh to make the arc radius D, 0, your silk soil in the middle of the 四 (four) ~ with the center of the shaft 194 extend. In one embodiment, the arcuate 〇 ^ , + 仏 is , 7.3 吋 (185 mm) to 8.3 pairs (21 〇 mm), and the target is about 17.8 吋 (454 mm). In one embodiment, the arc is a roundness of 4D KM, an angle of about 7 〇 to about 180 degrees 厪 441 (Fig. 4D), for example about 13 axes 194 to a pivot 419 ... - in the embodiment It is about the radius D of the arc. In an embodiment, the outer magnetic pole 42 1 and the inner magnetic pole 422 each include a plurality of magnets 423 arranged in an array pattern on each side of the gap 426 and covered by the pole piece 429 (Fig. 4A). In one configuration, the north pole (N) of the magnet 423 of the outer magnetic pole 42 is disposed away from the rotating plate 413, and the south pole (S) of the magnet 423 of the inner magnetic pole 422 is disposed away from the rotating plate 413. In some configurations, a yoke (not shown) is disposed between the magnet of the inner and outer magnetic poles and the rotating plate 413. In one example, the source electromagnetic tube assembly 420 includes an outer magnetic pole 42 1 having 18 magnets and an inner magnetic pole 422 having 17 magnets, wherein the magnet 423 is composed of a samarium alloy, a rare earth material, or the like. . In one embodiment, the magnets 423 are each configured to generate a magnetic field having an intensity at or near the tip of about 1.1 angstroms to about 23 angstroms. In one embodiment, the gap 426 and the outer magnetic pole 421 and/or the inner magnetic pole 422 are uniform across the width of the arc. In one embodiment, the width of the arc is from about 1 to about 1.5 and is *(38.lmm). It was found that sputter deposition uniformity can be improved if the source electromagnetic tube assembly 42 is disposed radially outward of the target 132. However, if the primary sputtering occurs in the outer annulus of the target Π2, some of the sputtering target atoms may be redeposited inside the target 132. The relative sputtering rate away from the source electromagnetic tube assembly 42 is small, so the redeposited material will accumulate toward the rotating shaft 194. If the redeposited film is significantly thickened, it may peel off and form significant particles, so that the deposition is deteriorated to the base. The quality of the film on the material 105 and the quality of any device in the vicinity of the particles falling from the middle of the target 132. Therefore, in a configuration, as shown in Fig. π, the steering of the shaft 93A is controlled by the controller j9. The command sent is changed to cause the source solenoid to rotate, and the member 420 is rotated about the pivot 412 to the position of the material adjacent to the enhanced shot material. In one configuration, the centered source electromagnetic tube assembly 420 allows plasma to be generated in the vicinity and/or beyond the center of the target 132 to remove the redeposited material deposited thereon. Further, as described below, another element on the region outside the target surface 133 that forms the electromagnetic tube "track" or erodes the groove 916 (Fig. 1) will preferentially redeposit a sputtering element so that the surface of the substrate The material composition of the exposed regions will vary with time, so the redeposited material on the uncoated surface will affect the composition of the sputter deposited layer on the substrate. The area outside the 'track' generally includes an area outside the erosion trench 916, such as the central area 91 8 and the target outer edge area 920. Compared to the simple DC generating electro-convergence, the carbon-emitting electromagnetic tube produces an erosion groove 91 6 The area will cause more problems for RF-generated plasma, because it is easier to uniformly generate plasma across the surface of the target due to the delivery of RF energy to the target. Figure 4E shows an alternative embodiment of the electromagnetic tube system [89], where the outer magnetic pole 424 The inner magnetic pole 425 constitutes a closed loop electromagnetic tube that is concentrated around the center "M" of the target 132. In one embodiment, a radially symmetrically shaped electromagnetic tube design is used, which is an unbalanced and non-magnetic symmetric closed loop electromagnetic The tube can be used to deposit a film using RF and DC plasma. In one embodiment, the magnet 423 disposed on the outer magnetic pole 424 and the inner magnetic pole 425 is symmetrically distributed around the first axis 491 and asymmetrically distributed on the second axis. 492. In one embodiment, 'where the outer magnetic pole 424 and the inner magnetic pole 425 are along the first axis 491, the outer magnetic pole 424 and the inner magnetic pole 425 are outside and inside; the % intensity imbalance is about 0 5 to about 1. 5. Another reality in the design of an unbalanced closed loop In the embodiment, where the first magnetic pole 424 and the inner magnetic pole 425 are between the first shaft 491 and the outer magnetic pole 424 and the inner magnetic pole 425, the field-to-field strength imbalance ratio is about 18:17 to about 2 2011. 16: Note that the magnetic field imbalance between the inner magnetic pole and the outer magnetic pole is different from the asymmetry of the magnet 423 with respect to the second axis 492, since the imbalance is related to the field generated between the magnetic poles, and the asymmetry is with the surface of the target. The different regions exist or vary in the average magnetic field strength. In this configuration, the unbalanced closed loop electromagnetic tube is used to create an annular plasma region "PR" that is located near the center of the gap 427. The area of the electromagnetic tube system 189 above the second axis 492 (Fig. 4) or the area of the processing zone having the maximum density of the magnet 431 has a plasma density that is generally greater than the area of the electromagnetic tube system 189 under the second axis 492 or has a minimum magnet density. Or the area where there is no magnet has a high electrical density. Although the outer magnetic pole 424 and the inner magnetic polarization pole w 425A are respectively circular and magnetically conductive, the magnetic field generated between the magnetic poles along the -# 491 in the second axial bottom region will be significantly larger than the magnetic pole. - The magnetic field generated by the shaft 491 in the region above the second axis 492 is small. In the example, the magnetic field strength between the outer magnetic pole 424 and the inner magnetic pole along the first axis 91 along the first axis 192 & the outer magnetic pole and the inner magnetic pole 425 along the first axis 491 on the second axis 192 The magnetic field strength at the top is several orders of magnitude, or even almost zero. In this configuration, the electrons near the less magnetized region (such as the half-section segment in the second axis of Figure 4E) are more likely to escape the closed loop formed between the inner and outer magnetic poles and radially toward the center of the dry material. "M,, move. Escape electrons help to increase gas ionization near the central region of the target to improve target utilization. In one embodiment, the 'electromagnetic tube has an inner diameter of 65 „f and an outer diameter of Μ Time. Electricity 27 201104004 The magnetic tube spins on the substantially central axis above the material and the chamber; in one embodiment, it is configured to rotate about the center "M" by the motor 193 during processing. The substrate deposition process is controlled in one embodiment of the processing chamber to 100. The impedance controller 14 1 (Fig. 1A) is coupled to the electrode and RF is grounded to adjust the bias voltage on the substrate during processing to control the base. The surface of the material is the degree of impact. In one embodiment, the electrode is disposed adjacent the substrate receiving surface m of the support member 126 and includes an electrode 126A. In a pvd reactor, the bombardment of the substrate surface by controlling the grounding impedance of the electrode will affect the step coverage, overhang geometry and deposited film properties (eg grain size, film stress, crystal orientation, film density, raw sugar). Degree and film composition). Therefore, the impedance controller i4i can be used to change the deposition rate 'single rate, even the multi-component film composition of the substrate surface. In one embodiment, the impedance controller i4i appropriately adjusts the ground impedance of the electrode' substrate to actuate or prevent deposition or etch. Figure 6 illustrates an embodiment of an impedance controller 141 that includes a variable capacitor conditioning circuit with a feedback circuit for controlling the properties of a deposited metal or non-metal layer on a substrate. As described below, the variable capacitor adjustment circuit can be automated for a given period of time during the - or multiple stages of the pvD deposition fabrication method step. The actual impedance set point can be adjusted based on the measured current or voltage, or by some user defined setpoints, such as the full scale capacitance percentage of the variable capacitor. The set point depends on the substrate processing result to be achieved. Referring to FIG. 6 'the impedance controller 141 includes a variable capacitor 61 〇, 28 201104004 input 616, a selective output circuit 618, a selective inductor 62 〇, a selective resistor 62 interface 622, a processor 624, and a motor controller. 626 and motor 628. Motor 628 is preferably a stepper motor that attaches variable capacitor 61A in a manner that changes the capacitance of variable capacitor 610. Inductor 620 can be selectively added and can substantially slow or compensate for inductance differences caused by different cable lengths of impedance controllers i 4 and electrodes i 26 A provided by different chambers. Adding an inductor 62〇 facilitates recalculating the impedance control set point without the need for cluster tools 1〇3(4) a different chamber position and configuration. Again, output circuit 618 is selective and determines the substrate bias voltage during processing. Inductive and can include an inductor to measure the voltage sensor or current sensor variable capacitor. The sensor is used to provide feedback to control the motor and control the operating set point of the 6 10 . If there is a set output circuit 6^8, a feedback signal can be provided to the interface 622. The beta interface 622 provides a feedback signal to the processor 624 and the controller 19A. Processor 624 can be a dedicated n$ way, or a microprocessor or microcontroller base circuit. The variable capacitor 610 is set to adjust the ground impedance to adjust the interaction between the ions and the substrate during processing. Variable capacitor 610 is coupled to input 616' which couples electrode 126A. In one embodiment, input 616 is coupled via a coupling electrode 126A. The components may also be provided in the sixth or more additional components (e.g., selective inductor 62A). Other aspects of the circuit are understood in accordance with various aspects of the present invention. In the example - the capacitance of the variable capacitor 610 is 'force 50 picofarad (pF) to about i 〇〇〇 pF, and the inductance of the selective inductor 620 is about 0.26 microhenry _. 29 201104004 Interface 622 can also receive signals from motor controller 626. The processor 624 controls the Marin controller 626, which controls the motor 628 based on the signals and information received from the sensor output. Motor controller 626 causes motor 628 (preferably a stepper motor) to step through its position to vary the capacitance of variable capacitor 61 依 according to the model control signal and sensor output function. According to one aspect of the invention, the impedance controller 141 is disposed within a housing 605 that is disposed in the processing chamber 1A. Mounting the impedance controller 141 in the processing chamber to 100 makes it easier and more efficient to control the bias voltage on the substrate. The processor 624 can also be a special purpose interface circuit. The primary purpose of interface circuit or processor 624 is to control motor controller 626 based on input received from a sensor (e.g., voltage sensor 662 or current sensor 663 attached to a portion of the impedance controller 141 described above). If the processor 624 specifies a predetermined bias voltage set point, the motor controller 626 controls the generation of the valley to reach the set point. For example, if processor 624 controls the substrate bias voltage based on the voltage measured by impedance controller 141, motor controller 626 controls motor 628 based on the output of voltage sensor 662 to maintain the circuit at a constant voltage. In another example ten, if the processor 624 controls the substrate bias based on the current measured in the impedance controller (4), the motor controller 626 controls the motor to maintain a constant current through the circuit. Any of the known types of electric dust sensors can be employed in accordance with various aspects of the present invention and can be coupled between the processing chamber side of the variable capacitance stomach 61〇 and the ground. Similarly, any known type of current sensor (not shown) can be utilized in accordance with various aspects of the present invention. The electric sensor and the 30 201104004 current sensor are well known for this technique. Lower Process Kit and Substrate Support Assembly Referring to Figures 1A and 5A, the lower process kit 165 includes a deposition ring 5〇2 and a cover ring 170. The deposition ring 502 generally surrounds the branch member 126 in a ring or loop. The cover ring 170 at least partially covers a portion of the deposition ring 5〇2. The deposition ring 502 and the cover ring 170 cooperate to reduce sputter deposits formed on the peripheral edge 129 of the support member 126 and the overhanging edge 105A of the substrate 1〇5 during processing. A cover ring 170 surrounds and at least partially covers the deposition ring 5〇2 to receive and thereby shield the deposition ring 502 from sputter deposits. The cover ring 17 is made of a material that is resistant to splash plasma, such as a metallic material (such as stainless steel, titanium or aluminum) or a ceramic material (such as alumina). In the embodiment, the cover ring 1 is composed of a stainless steel material. In one embodiment, the surface of the cover ring 17 is treated by a twin wire aluminum arc spray (e.g., CLEANC0AtTm) to reduce particulate detachment from the surface of the cover ring 170. In one embodiment, the deposition ring 5〇2 is fabricated from a dielectric material that is invaded by a splash-resistant electrical beam, such as a ceramic material, such as Oxide. The cover ring 170 includes an annular ring 51〇 that includes a top surface 573 that slopes radially inwardly and surrounds the support #126. The top surface (7) of the annular ring 51 has an inner periphery 571 and a peripheral 516. The inner circumference 571 includes a rim π which is located radially inward of the inner open channel containing the deposition ring 502 to reduce the deposition of sputter deposits on the surface 5〇3 and the edge 572 of the deposition ring 502.卜 $ The wooden dog is sized, shaped and arranged along the 572 to cooperate and complement the curved gap to form a convolut between the cover ring (7) (10), and the narrow M of the ring is only inhibiting the treatment of sediment 31 201104004 Flow To the standard member 1 2 6 and the platform housing 1 2 8 . The top surface 573 can be tilted from about 1 degree to about 2 degrees from horizontal. The angle of the top surface 573 of the cover ring μ is designed to minimize the accumulation of deposits on the overhanging edge 105A (4) of the substrate 1G5 which will adversely affect the particle properties obtained throughout the substrate 1〇5. The cover ring may comprise any material that is compatible with the process chemistry, such as titanium or, in the case, a cover ring W. The outer diameter is about 15.5 one minute (four): Yes (40. - In one embodiment, the height of the cover ring 17A is about i pairs (2.5 cm) to about 1.5 吋 (3.8 cm). The spacing or gap 554 between the floor 561 and the cover ring 17 turns into a convoluted S-shaped path or a tortuous path to feed the slurry. This way of shape is beneficial [for example, because it can hinder and hinder the entry of the Kyro species into this Area, reducing undesired deposition of sputter material. In an embodiment, as shown in Figure 5A, during processing, the cover ring 170 is designed and positioned relative to the ground plane & 16 , so that it will not touch ground The shield 160 is electrically "floating", and in addition, in one embodiment, the cover ring (7) and the deposition ring 5G2 are placed away from the substrate ig5 - the distance < under the substrate receiving surface 127 of the support member 126, The electric field "E" generated by the RF and/or DC power delivered to the tappet 132 during processing is more evenly spread over the surface of the substrate. The letter is at the different stages of the RF power half cycle 'electrical floating surface (eg The surface of the cover ring 170 will be bombarded by electrons' so that the edge of the base #1〇5 is nearby The RF electric field of the domain is uniform. When the power source 181 is on the top surface 573, the average DC potential of the surface 573 of the top surface 573 is high. 32 201104004 will occur as a hit. Therefore, in the embodiment, the period It is ensured that the deposited film layer formed on the upper surface of the cover ring i7〇 has no electronic grounding path and is away from the edge 105A of the substrate 1〇5. In an example, the inner circumference 571 of the cover ring is spaced apart from the substrate 1〇5. The edge 1〇5A is at least 吋5吋 (12 setting. In another example, the inner circumference 571 of the cover ring 170 is about 0.5 吋 (12.7 mm) to about 3 吋 (76 2 mm) from the edge 105A of the substrate 1〇5. For example, the edge of the substrate 105 is 1〇5 八约约 (25 4 mm). It has been found that an electrically floating surface (such as the surface of the cover ring 丨7〇) is placed on the exposed surface of the substrate 105 or the substrate receiving surface. The upper portion of 127 undesirably affects the uniformity of the deposited film throughout the substrate 105. Figure 5B illustrates the conventional process kit construction 'where the inner circumference 57ia and the top surface SWA of the conventional cover ring 17A are placed on the substrate. The surface 127 and the surface of the substrate 1〇5 are above 1〇5B. It is found that in these cases, the sink near the edge of the substrate 1〇5 The layer becomes thinner. The decrease in deposition near the edge of the salty substrate is 1〇5Α because the plasma more often interacts with the surface of the process set above the substrate surface 105B, resulting in more ion deposited film deposited on the cover ring 170. The top surface 573. In one embodiment, the cover ring 170 and the deposition ring 5〇2 are disposed below the substrate receiving surface 127, as shown in the extension line "τ" of Figure 5A. The ring and deposition ring 502 is placed under the substrate receiving surface 127 (e.g., the extension line "D"). _·2吋 (5_ 广应 Note that although the first A_6 diagrams all describe the substrate receiving surface 127 under the tall material 132 The cover € 170 and the deposition ring 5〇2 are located below the substrate receiving φ 127, but this vertical orientation configuration does not limit the scope of the invention, but merely defines the relative order and/or distance of the components as a reference frame. In some embodiments, the substrate is received from 127 to be positioned relative to 33 201104004 to other orientations (eg, upward, horizontal alignment), and the cover ring and deposition ring 502 are still at a distance from the target 132 that is still greater than the substrate receiving surface 127. The distance from the material 1 3 2 is far. In another embodiment, it is ensured that the deposited film layer (which is composed of a dielectric material) formed on the surface 5〇4 of the deposition ring 5〇2 has no electronic ground path to avoid an electric field in the vicinity of the substrate edge 051 A. Change over time (such as process kit life). To prevent the deposited film layer of the upper surface 504 from electrically contacting the shield 160 and the cover ring 170, the flange 572 of the cover ring 17 is sized, shaped, and disposed to prevent deposits on the deposition ring 5〇2 from bridging the cover ring 170. The deposited layer and the path to avoid forming the connection shield 160. The components of the lower process kit 165 operate separately and in combination to effectively reduce particulate generation and stray plasma. Compared to the existing multi-piece shield, it provides an extended RF return path to promote RF harmonics and generate stray plasma outside the process cavity. The above single shield reduces the RF return path to enclose the plasma inside. Processing area. The single-piece shielded flat bottom plate provides an additional shortened return path for RF to pass through the pedestal to further reduce harmonics and stray plasma' as a platform for existing grounded hardware. Referring to Figure 5A, in one embodiment, the base assembly 12 further includes a base grounding assembly 530 adapted to ensure that the bellows 1 24 is grounded during processing. If the bellows 124 reaches an RF potential different from that of the shield 丨6〇, it will affect the plasma uniformity and cause arcing in the processing chamber, thereby affecting the nature of the smear layer, generating particles and/or affecting the process uniformity. Sex. In one embodiment, the base grounding assembly 53A includes a flat plate 53A that includes a conductive spring 532. When the lift mechanism 122 moves the base assembly 12 toward the direction "v" 34 201104004 toward the processing position (as shown in Figure 5A), the conductive spring 532 and the plate 531 are configured to electrically contact the surface of the shield 16 turns. When the lifting mechanism 122 moves the base assembly 12G in the direction, v" to the transfer position (as shown in the iA@@m), the conductive spring 53 2 is disengaged from the shield i 60. The details of the present invention propose to form an integrated body. Apparatus and method for circuit components (e.g., cm〇s-type integrated circuits). Embodiments of the invention may also be used to form various semiconductor components, thin film transistors, etc. In an embodiment, the apparatus is adapted to form 胄k/ The metal gate type structure (especially, the rear gate method) B is used for metal deposition. The general principle of the present invention is applied to deposit various metals and compounds such as tungsten (W) and tungsten nitride (WN). , Titanium (Ti), Titanium Nitride (TiN), Titanium (7) alloy carbonization (Tao, Nitrided (HfN), Finished (fusi) 7 and Ming () in the example, using the The embodiment is beneficial for depositing a layer containing at least different elements, such as a composition of a 5 〇 5 〇 alloy. The layer 0 becomes smaller and smaller, especially the element product formed at 45 nm. There must be good film step coverage within the body circuit structure to be functional semi-conducting Different device components are formed in the body components, such as intermetallic poles, contacts, and interconnect features. Various methods have been used to improve PVD step coverage, such as long dry materials, substrate spacing, and ionized metal plasma. ), Lishaw electromagnetic tube applies a strong magnetic field, and then (4). The embodiment of this month especially twists the high-voltage process, combined with RF and DC sputtering and capacitance. In this configuration φ 甘 k is different from IMP, RF power It is directly applied to 35 201104004 to dry materials, not coils. Still pressure and RF power can produce high-density plasma near dry materials. Sputtering with high voltage and RF plasma, it is easier to ionize atoms or species passing through the plasma. Therefore, the ion/neutral particle ratio is effectively increased. In addition, many collisions occur when atoms or species approach the substrate under high pressure, which helps to reduce the energy of the species in the vertical direction (vertical substrate surface) and enhance it in parallel. Moving in the direction of the substrate. Unlike the IMP, since the species is ionized near the dry material and is not accelerated and/or guided by the electromagnetic field as in the IMP process, compared to the IMP type process (such as induction coil), the RF sink The integrated process provides better sidewall coverage. In addition, the plasma tends to form a distance away from the substrate, which helps to reduce plasma damage, so the method is suitable for contacts, metal gates, and other front-end applications. Includes methods to improve film uniformity and step coverage of the deposition process. Other advantages of this process include no bottom coverage asymmetry and a small bottom coverage and structural size dependence. Although the following mainly describes the metal gate formation process, The scope of the present invention is not limited to this configuration. Embodiments of the present invention are capable of depositing a metal having a predetermined work function for a 咼k metal gate, such as forming the aforementioned m〇sfet element, particularly for "replacement of a gate," or "Back gate, method. Metal with a predetermined work function, which is used in the same k-gate stack structure as an alternative to adjust the threshold voltage semiconductor components. The work functions of different materials, including metals, are quite diverse and can be selected according to the needs of special semiconductor components such as CM〇s semiconductor components.

In addition, multiple embodiments can be sputtered using RF 36 201104004 month t* to reduce damage to the substrate compared to conventional PVD processes. Various embodiments can also take advantage of the high electron containment to control the target erosion using the magnet and DC power of the electromagnetic tube and to generate diffusion plasma (total erosion) using RF energy. Furthermore, the examples can reduce the deposition rate to control the film (1 Å (human) or below) and sputter dielectric materials (such as La 〇 x, Α 1 〇χ, etc. The novel work function material can be controlled to achieve a predetermined stoichiometry and work function. In addition to the simple form of the manufacturing method for cost reduction, embodiments of the present invention also propose continuous path shielding and uniformity for good #RF mesh resistance. Return path. The lower profile cover ring and deposition ring design allows the RF-DC PVD source to be used in high voltage applications where good step coverage and film non-uniformity are required. Substrate support includes capacitance adjustment, Qianshan deposition film Properties and film uniformity. Variable capacitors allow adjustment of the impedance of the RF ground path' to adjust process uniformity for a variety of fabrication method types/conditions. Work function metal deposition for m〇sfet components less than 45nm node (eg CMOS metal gate) In the case of the replacement open-pole application, the deposited film is required to have a good step coverage (bottom thickness/field thickness) in a characteristic structure with a nanometer opening (the opening to the top of the aspect ratio of 25 nm and aspect ratio 255). The seven-C PVD chamber is formed as a first gate, and the application is generally performed at a low level (about 2 mTorr) to deposit a highly uniform film in the field of the substrate, but in a non-existing structure. The step coverage of the low-pressure deposited film is not good, and it is 15_2〇0/etc. to achieve high step coverage, for example, instead of inter-pole, and mode 75/〇 or above, high-pressure process can be used. 7A-7H The figure shows the cross section of the transistor during processing, 37 201104004, for example CMOS transistor 700. CMOS transistor 700 comprises a gate dielectric layer, a gate metal layer and different work function metals along the gate wall, such as p metal And η metal. The figure shows a substrate on which a gate dielectric layer and a gate metal layer are disposed. The sidewall spacers show vertical sidewalls adjacent to the gate dielectric layer and the gate metal layer. Embodiments of the invention A gate stack structure that can be used to form a 7th-7th MOSFET transistor. Figure 7-7 is a cross-sectional view of a m〇sfet formed using an embodiment of the present invention, such as a CMOS transistor 700. Figure 7A-7H shows the formation of a CMOS The rear gate mode of the transistor. Figure 7A shows the C with substrate 7〇2 The MOS transistor 700 has a shallow trench isolation (STI) 704 formed by a known method. The high mobility interface layer 7 is formed on the surface of the substrate and covers the STI 704, and then forms the high-k dielectric layer 708. On layer 7〇6, as shown in Fig. 7B, a polysilicon layer 710 is deposited on the substrate and layers 7〇6, 7〇8. As shown in Fig. 7C, the polysilicon 710 is subjected to lithography and etching to form a gate to be formed. The region of the pole structure 7 11. In various subsequent steps, the spacer 717, the telluride 716, the stress nitride layer 714, and the source/drain region 712 are formed on the substrate by methods known in the art. Layer 718 is formed on the remaining layers and ground into a 7D figure geometry. As shown in Fig. 7E, the polysilicon gate structure 71 is then etched to form trenches 720. Then, as shown in Fig. 7F, the doped metal gate is deposited in trench 720, such as p metal gate 723 and n metal gate 722. As shown in Figure 7G, the gate structure is then filled with metal 724. Finally, the substrate is ground to form a metal gate η on the substrate 7〇2: Embodiments of the present invention are particularly advantageous for forming high-k metal gates, particularly 38 201104004 metal gates with metal alloys. 1A-6 are various views of an rf dc pvd chamber 1 根据 in accordance with an embodiment of the present invention. The RF-DCPVD chamber 100 allows high voltage sputtering of a metal film to form a gate stack, for example, using the gate mode described in the 7A-7H diagram. The chamber includes an RF source with a locally matched network to utilize RF energy to sputter the target material. The electromagnetic tube helps control film uniformity, and the addition of Dc to the dry material enhances the aggression and uniformity control. The shape of the target also affects the plasma distribution, which affects film uniformity. Various target geometries, such as flat, frustum or concave, may be employed in accordance with embodiments of the present invention. The tapered target has a thicker edge and a higher bump at the mid-half. Concave shaped targets tend to focus the plasma at the center of the target, so there is a thicker center and smaller bumps at the mid-radius. In one embodiment, the target reduces trace metal contaminants and uses a 6〇6丨 aluminum alloy backing plate. In one embodiment, a multi-component target is used to process a chamber 1 , wherein the multi-component target comprises a material having at least two different elements. In one embodiment, the multicomponent target is a TiAl alloy target, and in a different embodiment of the invention the 'composition ratio is 丨: 1, 3: 1 or 丨: 3. The TiAl target with a composition ratio of 1:1 can effectively block the A1 filling, so that T1AI3 can be prevented from forming at room temperature. If Ti and μ are deposited separately and excess A can be obtained, TiAl3 » multi-component target pair has predetermined thickness uniformity, composition uniformity, Rs uniformity, composition ratio, step coverage, bottom coverage, overhang. Sputtered films such as the other bring unprecedented challenges. Different compositions (such as multi-line target elements) have different sputtering results based on the nature of the electrons, the quality of the elements, the bonding of the elements in the light material, and the crystal structure and other variables. Since the sputtering rate of various components of the target is different, ions and/or neutral particles from adjacent plasmas can bombard the multicomponent solid surface, and the chemical composition of the surface of the target can be changed. Figures 8 and 9 further illustrate these topics. Figure 8 shows the elastic collision and scattering of components of different masses m 1 and m 2 . Graph 800 depicts the stationary particle m2 being collided by another particle having mass m1, such as Ar+ ions from a plasma. Figure 802. depicts two moving particles m b m2 collision, and scattering due to collision ❶ from a larger scale 'sputtering composition of the general scattering distribution or degradation distribution characteristics in the chamber can be cosine distribution, low cosine (under c〇sine) distribution or over cosine sputtering distribution depiction. Figure 9 illustrates the elemental sputter distribution 900 or flux distribution of the multi-component target 906. For example, in one embodiment of the present invention, if the multiple component target 9〇6 is a titanium aluminum (TiAl) target, the sputtering distribution of each constituent material will be greatly different. Compared to yttrium (mass = 48) and argon (mass = 4 angstroms), aluminum is a lighter atom (mass = 27), so its flux distribution from the surface of the target will be different from titanium. It was found that the argon ion (Ar+) accelerated from the electrical destruction in the dry material would collide with the Ming atom to produce a flux distribution or lasing distribution of the low cosine 902. Conversely, when the Ar+ ions collide with the titanium atoms of the target 906, the sputtering distribution characteristics are more similar to the cosine distribution 904. Therefore, compared with the titanium atom, the aluminum atom tends to travel horizontally more than the vertical direction. (4) The sub-dispersion is more dispersed, resulting in many of the atoms lost in the shield, not the substrate. However, there are a lot of sputum at the center of the substrate. As the pressure increases, the deposition rate is also required to be lifted. Two more will scatter to the shield. 201104004 The unequal sputtering distribution of the target elements will result in non-uniform compositional properties of the film sputtered onto the substrate within the chamber. For example, when the unequal distribution ratio of the two components of the target 906 is not compensated, the low cosine sputtering distribution of aluminum causes a large amount of aluminum in the area around the substrate, and the cosine-sputtered distribution of titanium causes a large amount of the central region of the substrate. titanium. Increasing the chamber pressure also affects the scattering distribution of the sputtering composition. Increasing the pressure will result in more scattering—because its mass is lighter than titanium, plus its interaction with energy ions and neutral particles in the plasma. During processing, re-sputtering also affects film properties and target composition. "Atoms from the deposited film are re-sputtered from the film to another location on the substrate, or even back to the processing and surrounding components, such as shielding or targets. . At least one challenge of using a multi-component target is to deposit a film having a uniform composition ratio across the surface of the substrate and to achieve a predetermined overall step coverage. Another challenge in using multiple component targets is to change the compositional material ratio of the target over time. The change in the chemical composition of the surface of the target forms a region known as a change in priority from the surface, and has a layer of π && Once the surface is bombarded, the composition with the highest sputtering rate

To maintain a predetermined and/or uniform target table Sputtering multiple component targets requires special processing steps. Uniform dry material surface composition to achieve a predetermined shot 41 201104004 Membrane composition. The addition of DC power to the plasma also affects the deposited film properties of the multi-component target. The DC power coupled to the target produces a target voltage and a corresponding sheath surrounding the target surface 133. Increasing the DC power widens the sheath, which in turn accelerates the Ar+ ions and provides more energy for the Ar+ ions, which also affects the directionality or flux distribution (such as the cosine distribution) of the sputtered material on the surface of the target^improving the DC applied to the target The voltage improves the film composition ratio formed on the surface of the substrate, which is due to more similar cosine-sputtering distribution from the multi-component target, which is more oriented to the substrate. An increase in voltage will cause neutral deposition and increase ion flux, which contributes to the directionality of the species. The higher the voltage, the more perpendicular the ions are to the target surface (i.e., the first surface of the target) into the target, and the sputter species perpendicular to the target surface leaving the target. Increasing the DC target voltage will sharpen or shift the element flux distribution over the cosine distribution, resulting in less scattering of the sputter species. Low target voltages (such as 3 volts or less) will cause greater dispersion, increasing the DC and target voltage (eg, up to about 500 volts) 'scattering reduction, and improving the composition ratio, which is to some extent Due to the reduced amount of scattering. In terms of fixed RF power, the increase in Dc power will make the ratio smaller and approximate one. A higher dry matter potential will result in a more vertical surface with a sputter angle, and in both cases, the sputter distribution tends to be excessively cosine. Further, by increasing the DC power, the ratio of ions in the RF plasma to the intermediate particles is reduced, and the bias is applied to the substrate, so that increasing the DC power also reduces the surface sputtering of the substrate. Increasing the flux of neutral particles generally does not increase the scattering of sputtered material in the plasma. The film step coverage on the features of the substrate will decrease with increasing DC power applied to the multiple component 42 201104004 dry material. Increasing the DC power causes a larger neutral particle flux, which indicates a decrease in the effective ion fraction. As a result, less sputtered material is ionized, resulting in a reduced amount of sputtered material reaching the bottom of the characteristic crucible compared to the amount deposited in the field. Neutral particle flux distribution can be considered as substantially isotropic in energy and direction, and the ion flux to the substrate (ie, charged particles) accelerates through the substrate bias potential, thus providing more kinetic energy to improve step coverage. rate. However, even a large increase in DC power may only reduce the step coverage rate of 20/. . The enthalpy still needs to ionize an appropriate amount of metal to allow these ions to be attracted to the substrate and into the features. In addition, since the vertical direction of the sputter material from the target is enhanced, the aluminum to titanium composition ratio of the deposited film on the substrate also decreases as the DC power increases. In some cases, the bottom coverage is improved by reducing the DC power by applying a bias to the surface of the substrate to resputter the film. However, re-sputtering of the surface of the substrate is not conducive to the composition ratio, making it difficult to adjust only by DC power control. In some embodiments of the invention, a DC source 182 coupled to a multi-component target 132 is used to ignite electrical. The rf power delivered to the DC drive target can reduce the overall target voltage and provide a corresponding sheath around and dominate the DC power induction sheath. Although the RF_DC drive target has a thick plasma sheath formed under the target and a large overall pressure drop between the target and the plasma, the plasma conductivity will increase due to the increase of the plasma ion concentration. The material voltage drops with low to medium RF power. The thick sheath is more capable of accelerating argon ions (Ar+)' thus providing higher sputter ion energy. In some cases, the peak-to-peak voltage caused by the additional RD power will be further 43 201104004

Increase the energy of several galvanic ions. Thick sheaths increase the scattering rate and power-enhanced electrical (four) sub-fabrication, which helps to improve the effect of substrate bias on the deposited ions' and thus improves the step coverage of the crucible. Plasma ionization also increases with increasing RF frequency, resulting in increased electron mobility, which increases argon ion energy and increases sputtering rate. The lamp power needs to be maintained at a minimum power to provide improved X-ray and film properties, and to improve the step coverage of the film. The RF power during film deposition is set to about i watts (kw) to about 3 (10), for example, in another embodiment, the RF power is set to about 32 kW. Adding the power to the top of the DC (four) will change the dry material M, scattering and radiance, thus affecting the composition ratio. In the embodiment the target voltage is from about 300 volts to about 55 G volts, such as about 52 G volts or about volts. As the light voltage increases, the A1 : Ti ratio decreases. High power will produce a high power density, which will reduce the scattering angle difference and thus the A1:Ti ratio. Also, the power will increase the edge effect, so the Rs uniformity gets worse. In view of the above, embodiments of the present invention include applying DC power from a DC power source 182 that is coupled to the multi-component target 132 when RF plasma is formed in the processing region no. In another embodiment of the invention, the DC power source is set from about 450 W to about 2.5 kW and the RF power source is set from about lkw to about 3.5 kW. For example, in one embodiment of the invention, both the Dc power source and the RF power source are set to about 2 kw. In yet another embodiment of the invention, the 'DC power source is set to about 2 kW, and the RF power source is set to about 3.2 kW. More specifically, in one embodiment, the plurality of material voltages are 320 volts, the RF power is about 2 kW, and the DC power is about 540 W. This can provide a good step coverage for the aspect ratio features. In another embodiment, the material voltage is 500 volts and the rf and DC power is about 2 kW, which maintains a good film composition ratio. When the substrate bias is applied, the argon gas is ionized so that the sputtered metal becomes more ionized, so that the RF drive plasma can reach a certain point, thereby improving the bottom coverage of the substrate characteristic structure. When the pressure in the treatment zone drops, the bottom coverage also decreases, especially if the pressure is below 丨〇mTorr. The low pressure will cause the composition to become more like a Dc-driven plasma to produce A1: a similar ratio of 1:1 to 1, but lowering the step coverage. In addition to high voltage, rf power also helps to improve the bottom coverage of the substrate features, especially high aspect ratio features that are very difficult to achieve proper bottom coverage. The pressure in the treatment zone generally depends on the type of multicomponent target used, the size of the formation features on the substrate, and the predetermined film properties f. The cavity to pressure during film deposition may range from about 20 mTorr to about 6 MTorr, or even up to 75 mTorr, such as about 22 mTorr, 3 G mTorr or 4 () mTorr, Depending on the intended treatment effect caused by the chamber pressure. In one embodiment of the invention, the flow rate is about 5 〇 #准立方厘米 per minute (coffee (1) to 1 〇〇SCCm, for example, 75 sccm. During chamber processing, the gate valve 147 may be fully or partially opened.

TiA; too high pressure in the square area will increase scattering, especially in the dry surface of the binary film U component. As mentioned earlier, Shao and Qin scattered in different ways to leave more: dry materials. By adjusting the parameters that may affect the species (4) leather, (4) reaching the substrate with a high degree of processing pressure*, arguing a ^ 丨友兴 will also become a sputter species and plasma ions and electrons 45 201104004 more The frequency of collisions or the number of collisions leads to a larger difference in the angular distribution of different elements. However, due to the higher power applied by the DC or RF source, more forward momentum is provided to the sputtered atoms, which may result in a smaller angular distribution difference. Lifting the pressure in the treatment zone also improves bottom coverage. However, too high a pressure in the treatment zone will increase the scattering of sputtered species away from the target, thus reducing the steepness of the direction and the coverage of the bottom. To counteract the effects of increased pressure, the target voltage can be increased to reduce any binary compound scattering, such as aluminum and titanium, with different sputtering rates and distributions. Increasing the DC power will also accelerate the deposition rate, which also helps to counteract the scattering caused by high voltages in the system, but the step coverage is only reduced because the field thickness is generated faster than any region within the substrate's characteristic structure. The pressure can assist in changing the distribution of sputtered away from the target to a better distribution to help improve the properties of the deposited film. Pressure also affects the redistribution of sputtered species onto the target, substrate, and shield. High pressure particularly encourages the redistribution of lighter compounds (such as aluminum) to the shield and target, which in turn changes the surface composition ratio of the target and reduces the amount of aluminum that reaches the surface of the substrate. Increasing the pressure results in a larger difference in the scattering angle' which will increase the A1: Ti composition ratio. The high pressure also provides a small edge effect, which improves Rs uniformity. Pressure has a greater effect on improving Rs and thickness uniformity than DC, rf, power or capacitance regulator positions, as will be detailed later. The pressure also affects the argon ionization and the sputter species that pass through the plasma towards the substrate. Increasing the pressure and the RFl force rate of the plasma can also produce so-called penning ionization. Pennin ionization is a process involving neutral atoms and/or intermolecular reactions. In the materialized towel, the gas phase excited state atom is divided into 46 201104004 The sub-interaction with the dry material molecules forms free radical molecular cations with electrons and neutral gas molecules. For example, an argon atom is ionized by Pennin and the argon plasma in the plasma is argon gas. Two: The ... force rate is more directly excited, the meter% of the rat ion energy is about 45 electron volts (eV) to U 〇 eV, for example about 5 〇 eV. The dry material is also reduced as the processing chamber is lifted, as the ground path becomes more conductive. The thickness of the lemma decreases as ^ = increases, which affects the redistribution of atoms on the electrical dust and dry materials. Electromagnetic e also affects film deposition and properties. The type and location of the electromagnetic tube: the production of different (four) field (B field), which also affects the composition of the multi-component film ^ - the cover of the IM and the invasion # (four), the specific position of the electromagnetic tube also helps to improve - ratio. Putting the power on the right position helps to avoid too much damage to the shield, as caused by the spread of \'eight. For example, placing the solenoid in the dry material. „ 贱 刀 , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , Diffusion 'but not out of the shield, but throughout the entire substrate area $ uniform sputtering distribution type, the view chamber geometry = 疋 'such as the spacing of the substrate and dry material (four) material size, single - in any The sputtering distribution of the moment, the camp bamboo 儆 j栺 is painted into an early source, so that the electromagnetic == cover the substrate. However, if a multi-die target with two different distributions is used, it is difficult to evenly shoot the spring from The center of the sputtering source is located above the center and sputtered 47 201104004 The species spreads the substrate fairly evenly, so that the distribution on the substrate is fairly uniform and the composition ratio is improved, and the Rs uniformity will still be suffered. The closed loop electromagnetic tube limits the plasma between the B field boundaries formed by the electromagnetic tube, depending on the precise configuration of the magnet of the electromagnetic tube and the type of magnet. The target will form an erosion path of a specific shape and position. Tube type and its Depending on the method, in DC plasma, the electromagnetic tube runs electronically around the plasma trace and assists in ionizing the plasma. Essentially, the electromagnetic e helps to locally limit the electrons, so that the total supply area allows argon It ionizes near the surface of the target and forms a target erosion trajectory in the same area. Therefore, the electromagnetic S helps to control the surface of the target to form an erosion trajectory.

The open-circuit electromagnetic tube produces a weaker B-field at the open end position, so that the g-body appears to produce more RF power to the plasma than the electromagnetic tube-free processing chamber. However, in the case of the general RF sputtering process, the electromagnetic officer is not used for sputtering. The RFa rate itself allows power to transport J electrons from the target to ionize the argon atoms without the magnetic limitations of the electromagnetic tube. Placing a closed loop solenoid close to the dry center does not seem to allow the RF power source to be used to adjust the process. Therefore, limiting the electronic and RF power near the center of the dry material seems to be unhelpful for the sputtering process. : The open-circuit magnet does not form a completely continuous closed electric trajectory; the 'electron is only trapped for a period of time, and then diffuses away from the magnetic field. ^^ Because of the open circuit, the magnetic field generated between the magnetic poles does not shape, only Closed ^ path (in other words, according to the flat observation, the path of the magnetic field that generates the magnetic field does not fit the two-dimensional plane of the two sides to form a continuous closed loop path, where the magnetic

C 48 201104004 Vertical dry surface in Z direction). The relative position between them is closely related and the film composition is adjusted. The routine vector parallels the target surface (ie, Bz=0; where the film composition and the electropolymerization intrusion trajectory are close to the substrate position. The position of the electromagnetic tube will adjust the plasma erosion as shown in Figure 4D, the electromagnetic answer When the electric sleeve s is in the first position, it will form a plasma in the outer region of the target. When the electro-optical electromagnetic officer is in the first position, the deposited film composition on the substrate is approximately 1, so the composition of the target 兀There are different distribution profiles. The electromagnetic tube is @ 2 2 to 2 8_ above the target, for example 2.5mm. The speed of the electromagnetic tube is about 6〇 to about 7〇 rpm (4), for example 65rpm °, only DC胄Pulp and electromagnetic tubes—collectively capture electrons in a wider defined area. Increasing $RF power can substantially adjust electrons and argon' so that even if it is confined to a small area, the plasma is still given more energy. Partially limited to the electric damage area under the electromagnetic tube, the open circuit electromagnetic tube allows electrons to escape. The open circuit electromagnetic tube can sputter most of the target surface. The magnetic field between the inner magnetic pole and the outer magnetic pole is open at the end, so The electrons will leak out the magnetic field connecting each end of the magnetic pole. Now due to the different influences of the sputtering distribution of the multi-component (four) elements, the electromagnetic tube is placed "outward, the position is readable. The ratio of A1 to bismuth on the surface of the substrate. In addition, the electromagnetic tube is moved to the central area or" The inwardly facing position can be used to clean the cavity t, such as a redeposited sputter material on the target, which will be detailed later in conjunction with Figures 10A-10C. The properties of the deposited film are also affected by substrate bias. As described above, Adjusting the variable capacitance regulator can be used to provide a bias to the substrate support. Adjusting the capacitance of the valley adjuster will change the bias voltage on the substrate support. Different positions of the capacitance adjuster are used for deposition and/or re-splashing The deposited film is deposited. In the case of a peptide 49 201104004, the 'substrate bias is used for the 'etched' mode without causing a net deposition to adjust the stress of the film formed on the surface of the substrate. The sputtered metal atoms have different qualities' Therefore, by adjusting the bias voltage on the substrate, or adjusting the ion bombardment and re-sputtering the deposited film, the composition of the deposited film can be changed. For example, the titanium and the titanium have different sputtering rates, so changing the bias voltage can change the bombardment energy. Change the sink The composition ratio of the film. In an example, the higher the positive voltage on the substrate, the more the deposit contains, because the larger and heavier titanium atoms are not as easily redirected as aluminum. At the voltage of the voltage, the neutral titanium atoms in the plasma tend to the surface of the substrate. The aluminum is lighter and more easily ionized, so when the positive bias voltage is the same as that of titanium, the aluminum does not reach the surface of the substrate, so it will be rich. Titanium film. On the other side of the spectrum, at a high negative substrate bias voltage, aluminum is more susceptible to substrate bias than titanium and is re-sputtered by the incoming ions from the plasma, making it easier to move aluminum around. The voltage affects the energy of the ions striking the surface of the substrate, and it is easier to move the aluminum around, thus forming a titanium-rich surface. Since a material can be sputtered at a different rate with respect to another material, setting the substrate bias voltage can be effective. The amount of re-sputtering and composition ratio are controlled. A medium substrate bias voltage that is not too positive or too negative is necessary to have a substantially uniform composition ratio of the deposited film on the substrate. When the capacitance of the variable capacitor of the impedance controller (4) is increased, the Al:Ti ratio is decreased to approximate, for example, u, and in some cases even less than, for example, 0.90. In one embodiment, the A1:Ti ratio is from about 9 to about 12, such as 1.0 and U. The average composition ratio from center to edge is from about 115 to about 1.16. When the voltage bias becomes negative _, the Ar+ ion is more likely to be emitted from the 50 201104004. If the voltage bias is positive, the A and Ti ions will be pushed away from the substrate. However, A1: Τι increases rather than because the Ti ion fraction in the plasma is less than the a 丨 ion fraction. The resonance setting of the impedance controller 141 also affects the bias voltage. When the bias voltage is close to resonance, the ratio of the substrate reaches an approximate voltage, and the ratio decreases. In one embodiment, the base voltage bias is about +250 to -250 Vdc. In another embodiment, the voltage bias on the substrate is between about -150 volts to +50 volts. As shown in FIG. 6, an embodiment of the present invention includes adjusting a bias voltage on an electrode 126A of the substrate support 126, wherein the substrate support 126 has a substrate receiving surface 127 disposed in the processing region 110, wherein the adjustment bias is The voltage 疋 changes the capacitance of the variable capacitor 610 to control the bias voltage reached by the electrode 126A relative to the electrical ground. The electric valley of the variable capacitor 6 为 is about 5 to about 1 〇 〇 〇 picofarad. For example, the variable capacitor is set to 12 · 5 % of the total capacitance or up to 85 % of the total capacitance. The system resonance is about 55% of the total capacitance. Therefore, with the above parameters, the above apparatus can employ various methods to improve step coverage and film uniformity. In one embodiment of the invention, high voltage, RF power, and DC power are used in the rF_dC PVD chamber to deposit a metal film in the gate structure. 11 is a flow chart of a method 1100 of depositing a thin film in accordance with various embodiments of the present invention. In step 11 〇 2, the method includes forming a plasma in the processing region U0 of the chamber 1 ( (as shown in Fig. ία). The plasma is formed by an RF power supply 181 that is coupled to the multi-component coffin 132 in the chamber 100. The multi-component target 132 has a first surface (eg, sputtering) of the processing region n〇51 201104004 that contacts the chamber ι The surface 133) and the second surface (1) facing the first surface i32. In step 1104, the method includes moving the electromagnetic tube system relative to the multi-component dry material m, wherein the electromagnetic tube system is as shown in Figure 4D when the electromagnetic tube system moves and the plasma is formed! The center point of the 89 multi-component target 132 is at the first position. In step 1106, multiple components are deposited in the chamber! (10) The substrate on the substrate support 126 is 1 〇 5 士 7A-7H. The multi-component film is a metal alloy deposited in the metal closed electrode 725. For example, the (4) alloy. The multi-component film was deposited at a rate of 12 in, minute and a thickness of about (10) A. In the embodiment, the film thickness is from about 40 Å to about 15 Å, and the deposition rate is from about 3 Torr/min to about 24 Å/min. However, the predetermined thickness depends on the work function requirements, and the general skilled person can adjust accordingly. Embodiments of the present invention are capable of processing more than 2 substrates per hour. In another embodiment of the present invention, as shown in FIG. 4B-4D, the second surface 135 of the multiple component target 132 is disposed adjacent to the electromagnetic tube system 189 while rotating the electromagnetic field around the center point of the multiple component target. The tube system 189 moves the electromagnetic officer system 889. As previously mentioned, the electromagnetic tube system includes an outer magnetic pole 421 comprising a plurality of magnets 423 and an inner magnetic pole 422 comprising a plurality of magnets 423, wherein the outer magnetic poles and the inner magnetic poles form an open loop electromagnetic tube assembly. In another embodiment, the method includes adjusting the capacitance of the variable capacitor 610 to change the bias voltage on the substrate, wherein the variable capacitor 61 is disposed between the electrode 126 and the electrical ground disposed in the substrate support 126. . The method further includes disposing the cover ring 17A away from the peripheral edge 129 of the substrate receiving surface 127 of the substrate support 126 by a distance of 52 201104004. The distance from the surface of the plasma forming surface to the multiple component target 132 is also The cover ring is not electrically connected to the electrical ground when it is farther than the substrate receiving surface 127 and the processing area is electrically destroyed. In another embodiment, the spacing between the multiple component target 132 and the substrate 105 is about 174 _i82 mme. The further away from the target, the more low cosine sputtering materials impact the shield at a faster rate. Therefore, the interval also affects the scattering. In addition, increasing the spacing will keep the substrate away from electrical stimulation. In yet another embodiment, the electromagnetic tube system includes an outer magnetic pole 424 and an inner magnetic pole 425, shown in Fig. 4E, concentrically surrounding the first shaft 49 1 extending through the center point and forming a closed loop electromagnetic tube assembly. A plurality of magnets 423 are disposed on the inner magnetic pole 425 and the outer magnetic pole 424, and are disposed asymmetrically around the second shaft 492 extending through the center point and perpendicular to the first shaft 491. In the examples of this month, the step coverage of the 〒 aspect ratio feature on the substrate is as high as 80%. In some embodiments, the step coverage is even up to 1%. In another embodiment, a method of depositing a film includes delivering energy to a plasma formed in a processing region of a chamber, wherein the delivered energy comprises RF power delivered from the RF power supply to the multicomponent dry material, and from the DC power source. The DC power of the supplier is multi-component dry material. Delivering dc power means applying Dc energy from a DC power supply to multiple component dry materials, such as DC voltage or current. Delivering RF power means applying RF energy from an RF power supply to a multi-component target. The method further includes translating the electromagnetic tube relative to the multi-component target, wherein when the electromagnetic tube is translated by A, the center of the multi-component target is located at the first position; the bias voltage on the electrode is adjusted, and the electrode is Provided in the vicinity of the substrate receiving surface of the substrate support, wherein the bias voltage is adjusted by changing the capacitance of the variable capacitor 53 201104004 to control the bias voltage reached by the electrode relative to the electrical ground; 2 Torr; and depositing a metal alloy film onto a substrate disposed on the receiving surface of the substrate. In a further embodiment of the invention, pre-deposition of the substrate is performed 35 prior to the deposition of the film to obtain a preferred tamper layer on the dry material. Dry material burning removes residual contaminants from the dry material manufacturing process, adsorbs gas on the material, and conditions the process set for TiA1 film deposition. Dry cookers can also begin to form, orbit, or erode grooves in the target. After processing a batch of substrate, the chamber needs to be cleaned, especially the target needs to be reconditioned. As described above, the constituent elements of the heavy component dry materials may be redeposited on the free material. It is particularly easy to re-deposit in the center of the target due to the scattering effect of the inscription Fe and the process. The I0A_10C diagram shows the targets in different stages of use, and the first Figure A shows a new dry material assembly 910 having a backing plate 912 and a multi-component target 9 1 4 ', for example, a Ti A1 alloy containing i: i. After firing and during the film deposition process, tracks or erosion trenches 916 begin to form in the target. When the fire is off, the electromagnetic tube is in, outward, and the position is rotated, and the electrical damage is formed under the target along the outer region of the target. _ "Zone 918 is still partially eroded, but not too much, because the external area of the electromagnetic tube is set to be dense under the target. However, during processing, such as H) C, the core material is redeposited to (4) The redeposition zone 919 is formed to have a composition different from the rest of the target. Each batch has a substrate, and the extent to which the redeposition zone 919 is formed and further before the deposition of the film (four) depends on various processing settings. After the substrate, a post-deposition cleaning process is performed. The cleaning process package 54 201104004 includes a first process and a second process. The process of removing the substrate includes removing the substrate from the chamber, and the source electromagnetic tube group, & And the member 42 is moved to the second position. In an example, the positional error of the 'source electromagnetic tube assembly 4 2 〇 β 调整 is adjusted by changing the steering of the electromagnetic tube moving device (such as the motor 193), such as the 4th C circle. As shown, the second position is "inward", position. The 荖剌 电 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知The cavities are covered, *· to, and the pressure is up to 2 mTorr. The redeposited material 919 deposited in the target central region 918 is then removed. The DC power and RF power of the first process are set to 2kw. The variable capacitor is set to :_2.5%. The plasma remains open to clean the chamber for up to 45 seconds. The P-knife is then made 7 times 'for example, plasma ignition/forming and removal to remove the redeposition from the center of the target. The first process includes moving the solenoid assembly to the first position or "outward," position (as shown in Figure 4D). Using RF* DC power coupled to the multi-component target to ignite the "electrical" is formed The multiple components are outside the first surface of the material. Below the crucible, the chamber is pressurized up to 4 Torr, which is similar to the second 图B diagram, and the etched trench 916 is re-formed in the multi-component target. In the high pressure range of the inventive embodiment, RF power excites plasma ions, such as Ar, and high pressure and Αι· ions collisions will increase the ion fraction. Heavier gases such as krypton (Kr) or xenon (Xe) cause more efficient scattering. While reducing the horizontal velocity of the ions, this is particularly advantageous for heavier metal deposition, such as tantalum (Ta), tungsten (W), etc. Embodiments of the present invention can achieve high film uniformity and step coverage. For example, the RF power and high voltage applied to the dry material can produce high-density plasma near the target. When the sputtered species passes through the plasma, it is ionized' thus greatly increasing the ion/neutral particle ratio of the plasma. In addition, 'sputtering species are down in the high pressure atmosphere. Many collisions occur when it comes to the substrate, which helps to reduce the energy of the species in the direction parallel to the substrate and increase its vertical directivity. Since the atoms are ionized near the target rather than near the surface of the substrate (because of the plasma being electromagnetically affected) The tube's asymmetric B-field limitation), the ion velocity is not as perpendicular as other methods, such as ionized metal plasma (IMp), which provides better sidewall/step coverage. RF_DC power coupled to multiple component targets The source provides asymmetry and unbalanced performance that allows electrons to move radially toward the center of the target and the center of the plasma to help increase ionization and target utilization. The reasons for the improved step coverage of this process are as follows: High Density The slurry is formed below the material, so the metal species are ionized by the plasma. High pressure and high RF power increase the RF plasma density, which means to increase the electron and

The density of Ar+. The pressure also shortens the mean free path, making metal species more susceptible to electron and Ar+ impact and ionization. In addition, the sputtered metal has a lower horizontal velocity near the surface of the substrate, so metal ions are more easily pulled down to the substrate. The low velocity of metal species is due to the loss of Ar+ multiple arbitrary scattering and the original velocity along the horizontal direction. The high pressure further strengthens this phenomenon. Therefore, according to an embodiment of the present invention, a uniform film composition can be formed from a multi-component target with good step coverage, uniform thickness, predetermined composition ratio, and Rs value. Although the present invention has been disclosed in the above preferred embodiments, it is not intended to limit the invention, and any skilled person skilled in the art can make various changes without departing from the scope of the invention. Retouching, therefore, the scope of the patent application scope of the present invention is subject to the definition of the patent application. BRIEF DESCRIPTION OF THE DRAWINGS In order to make the above-described features of the present invention more suitable, reference may be made to the accompanying drawings. It is to be understood that the invention is not intended to limit the scope of the invention and the scope of the invention . Still Fig. 1A is a cross-sectional view of a chamber in accordance with an embodiment of the present invention. 1B is an isometric view of a chamber in accordance with an embodiment of the present invention. FIG. 2 is a writeaway view of a chamber of the eighth embodiment of the present invention. ° ^ Figure 3A is a partial close-up cross-sectional view of the chamber of Figure 1A in accordance with an embodiment of the present invention. Figure 3B is a top plan view of the chamber of Figure 1A in accordance with an embodiment of the present invention. . Figure 3C is a top plan view of the chamber of Figure 1A in accordance with an embodiment of the present invention. Fig. 4A is an isometric view of the tube viewed from the target side, in accordance with an embodiment of the present invention. 'Electromagnetic, Fig. 4B is a partial bottom view of the electromagnetic tube according to an embodiment of the present invention. 57 201104004 Figure 4C is a partial bottom view of a solenoid according to an embodiment of the present invention. Figure 4D is a partial bottom plan view of a solenoid according to an embodiment of the present invention. _. Figure 4E is a partial top plan view of an electromagnetic tube in accordance with an embodiment of the present invention. Figure 5A is a partial cross-sectional view of a process kit in accordance with an embodiment of the present invention. Figure 5B is a partial cross-sectional view of a conventional process kit. Figure 6 is a schematic illustration of an impedance controller in accordance with an embodiment of the present invention. Sections 7A-7H illustrate a cross-section of an embodiment of a process for forming a CM〇s-type integrated circuit. Figure 8 illustrates the elastic collision of particles during the sputtering process. Figure 9 depicts the sputtering profile of the multiple component targets in the sputtering chamber. 10A-10C are diagrams showing an erosion profile formed on a sputtering target during processing. FIG. 11 is a flow chart showing a method of depositing a film according to an embodiment of the present invention. To help understand that the elements common to the figures are represented by the same component symbols as much as possible. It is to be understood that the elements and features disclosed in a certain embodiment may be incorporated in other embodiments without particular reference. [Main component symbol description] 58 201104004 100 Chamber 101 Main body 102 Connector 103A Transfer chamber 103 Cluster tool 104 Side wall 105 Substrate 105A Edge 105B Surface 106 Bottom wall 108 Processing assembly 110 Processing area 120 Base assembly 122 Lifting mechanism 123 Lifting pin 124 Bellows 126 Support 126A Conductive layer/electrode 127 Substrate receiving surface 128 Housing 129 Peripheral edge 130 Cover assembly 132 Target 133 > 135 Surface 134 Back side area 136 Isolator 139A Shaft 141 Controller 142 Air source 143 Power supply Supply 1 § 144, 148 conduit 146 exhaust 147 gate valve 149 pump 150 ' 165 process kit 160 shield 168 ring assembly 170, 170A cover ring 180 isolation component 181 RF power supply 181A RF power source 181B RF match 182 DC source 182A DC Power Supply 184 Feeder 184A- • B Surface 185 Conductive Wall 186 Shield 59 201104004 189 Electromagnetic System 191 Cover Case 193 Motor 193B Dielectric Layer 216 Edge 221 Step 252 ' 254 Wall 258, 268 Inner 262 270 Peripheral 267 Support Ring 276 Groove 402 Clearance 412 > 419 Pivot 414 Cross Arm 415 Counterweight 420 Source solenoid assembly 423 '431 Magnet 426 ' 427 Clearance 441 Angle 502 Deposition ring 510 Annular ring 530 Base grounding assembly 532 Magazine support 561 190 Controller 192 ' 194 Shaft 193 A Shaft 214 Inner 220 Joint 250 Isolation ring 256 Support side 260 ' 266 , 272 Surface 264 Contact surface 267A Spring fitting 278 Inflection point 410 Radial shifting mechanism 413 Rotating plate 414A Clamp 416 ' 417 Bumper 421-422 > 424-425 Magnetic pole 424A, 425A Sheet 429 pole piece 491, 492 shaft 503, 504 surface 516 periphery 531 plate 554 clearance 571, 571A inner circumference 60 201104004 572 protrusion 573 '573A surface 605 housing 610 capacitor 616 input 618 circuit 620 inductor 62 1 resistor 622 interface 624 processor 626 controller 628 motor 662 '663 inductor 700 transistor 702 substrate 704 STI 706 interface layer 708 dielectric layer 710 polysilicon layer (layer) 711 gate structure 712 source / > and polar region 714 gasification layer 716 Telluride 717 Spacer 718 Metal Deposition Front Dielectric Layer 720 Trench 722-723 ' 725 Gate 724 Metal 800, 802 Equation 900 Extinction distribution 902 Cosine distribution 904 Excessive cosine distribution 906, 914 Target 910 Target assembly 912 Back plate 916 Erosion groove 918 Center area 919 Redeposition area 920 Outer edge area 1100 Method 1102, 1 104, 1106 Step A Length C arrow Cn, C, 2 direction C2. RF current D radius D1, D2 diameter E electric field 61 201104004 F conveying point Μ center ml ' m2 mass / particle 北极 north pole 0 distance Ρ plasma PR plasma area R rotation Ri, R_2 direction S Antarctic T extension cord V direction 62

Claims (1)

201104004 VII. Patent application scope: 1. A plasma processing chamber, comprising at least: • a target having a first surface contacting a processing area and a second surface facing the first surface; a (RF) power supply coupled to the target; a direct current (DC) power supply coupled to the target; a substrate support having a substrate receiving surface; and a solenoid adjacent the target The second surface is disposed, wherein the electromagnetic tube comprises: an outer magnetic pole comprising a plurality of magnets; and an inner magnetic pole comprising a plurality of magnets, wherein the outer magnetic pole and the inner magnetic pole form an open loop electromagnetic tube assembly. 2. The plasma processing chamber of claim 1, further comprising: a central feeder electrically coupled to the target and having a first surface and a second surface, wherein the RF power source The supply is coupled to the first surface, the first surface is coupled to the target, and the central feeder is disposed above the target axis. The core 3. The electric cavity and the material device as described in the patent application scope are electrically coupled to the target and have a cross section, and the main sub-section extends between one side and a second surface and is symmetrically disposed at - m th tb „ ^一^ *^4 Four history The RF power supply is coupled to the first surface, a diameter deep width 63 201104004 ratio of about 0.001 / mm to about 0.025 / mm, wherein one of the surfaces of the section The first surface is extended between the second surface and the second surface. 4. The plasma processing chamber of claim 2, further comprising: a grounding shield 'at least partially enclosing a portion of the processing region and electrically connected to one Grounding; the substrate support further comprises an electrode disposed below the receiving surface of the substrate; a cover ring; and a deposition ring disposed over a portion of the substrate support, wherein the cover ring is disposed during processing The cover ring is electrically insulated from the ground on a portion of the deposition ring, and the deposition ring and the cover ring are disposed under the substrate receiving surface under the target. The chamber further includes: 4th of the plasma treatment / can be a variable capacitor disposed between the electrode and the ground and L adapted to adjust a capacitance of the variable capacitor during processing a second surface of the surface and a ~ edge; facing the first The substrate support member has a substrate receiving surface; the motor includes a shaft with a rotating shaft; / a substrate supporting member, the milk is charged with the cargo, coupled to the target; and 64 201104004 a magnetic tube, adjacent to the second surface of the target, wherein the electromagnetic tube comprises: a cross arm coupled to the shaft; a plate coupled to the cross arm from a pivot point, wherein the pivot point is apart from the shaft a distance; and an outer magnetic pole and an inner magnetic pole coupled to the flat plate and forming an open loop electromagnetic tube assembly. 7. The plasma processing chamber of claim 6, wherein the centroid of the plate is configured to move from the axis to the first distance and to the second direction when rotating toward the second direction Upon rotation, the center of mass of the plate is configured to move a second distance from the axis of rotation. 8. The electro-destruction processing chamber of claim 6, wherein the center of mass of the plate is configured to rotate about the pivot point in a third direction when the drawbar is rotated in the -first direction. The centroid of the plate is configured to rotate about the pivot point in a fourth direction when the shaft is rotated in a second direction opposite the first direction. 9' The plasma processing chamber of claim 6, wherein the outer magnetic pole and the inner magnetic pole form a portion of an arc. 10. The plasma processing chamber according to item 6 of the 5th patent scope of the towel, further comprising: 65 201104004 a grounding shield, at least partially surrounding the grounding; part of the processing area and electrically coupling the substrate material Further comprising an electrode disposed on the substrate to be attached to a cover ring; and a side, a deposition ring disposed over the substrate portion of the substrate, during which the cover ring is disposed on the portion of the deposition ring The second ring is electrically insulated from the ground, and the deposition ring and the cover ring are disposed below the bottom receiving surface of the substrate. π. A plasma processing chamber comprising at least: a dry material having a flute-contact surface of a processing area, a second surface facing the first surface, and an edge. A radio frequency (RF) a power supply coupled to the target; a substrate support having a substrate receiving surface; a motor including a shaft having a rotating shaft; and a solenoid tube adjacent to the target a first surface arrangement, wherein the electromagnetic tube comprises: an outer magnetic pole and an inner magnetic pole, concentrically extending around a first axis extending through a center point and forming a "closed loop electromagnetic f IM4 ·, # t $ placed in the inner magnetic pole and the Outside; ^ ^, fc A The plurality of magnets in the wall pole are asymmetrically disposed around a first axis. The second station is J. The sky-glaze extends through the center point and perpendicular to the first axis. 12. The plasma processing chamber of claim U, further comprising 66 201104004 comprising: a ground shield, at least partially enclosing a portion of the processing zone and electrically coupled to a ground; Λ the substrate support Further comprising an electrode disposed below the receiving surface of the substrate. a cover ring; and a deposition ring disposed over a portion of the substrate support, wherein the cover ring is disposed at the portion of the deposition ring during processing The cover ring is electrically insulated from the ground, and the deposition ring and the cover ring are disposed below the substrate receiving surface under the target. 13. A plasma processing chamber comprising: a target having a first surface contacting a processing region and a second surface facing the first surface; a radio frequency (RF) power supply, Coupling the target; the grounding shield 'at least partially encloses the portion of the processing region and electrically connected to the ground; and a substrate supporting assembly, comprising: a support member having a substrate receiving surface at the Below the target; a cover ring; and a % of the ring, placed above the part of the material, during the processing period, the first one; ^ class, Shi Tian ^ 0 is placed on the substrate receiving surface The cover is disposed on a portion of the >4 玄 戸 丨 丨 H , , , , , , , , , , , , ' ' ' ' ' ' ' ' ' ' ' ' 该 该 该 该 该 该 该 ' 该 该 该 该. 67 201104004 14. The plasma processing chamber of claim 13, further comprising: a motor comprising a shaft having a shaft; and an electromagnetic tube adjacent to the second surface of the target The electromagnetic tube comprises: an outer magnetic pole and an inner magnetic pole concentrically surrounding a first axis extending through a center point, and forming a closed loop electromagnetic tube assembly, wherein the inner magnetic pole and the outer magnetic pole are disposed a plurality of magnets are disposed asymmetrically around a second shaft, the second shaft extending through the center point and perpendicular to the first shaft 〇 15. The plasma processing chamber of claim 13 further includes An electrode ' is disposed in the support; a variable capacitor disposed between the electrode and the ground; and a controller adapted to adjust a capacitance of the variable capacitor during processing. 16. The plasma processing chamber of claim 13, further comprising: a motor having a shaft-shaft; and - a second surface of the electromagnetic tube adjacent to the target, wherein the The electromagnetic tube comprises: an outer magnetic pole comprising a plurality of magnets; and 68 201104004 - * eclipse comprising a plurality of magnets, wherein the outer magnetic pole and the inner magnetic pole form an open loop electromagnetic tube assembly. 17. The plasma processing chamber of claim 13, further comprising: a central feeder 'electrically coupling the target and having a first surface and a first surface, wherein the ruler 17 The power supply is coupled to the first surface, the first surface is coupled to the target, and the central feeder is disposed above a central axis of the target. 18. The plasma processing chamber of claim 13, further comprising a central feeder electrically coupled to the target and having a wear surface, the cross section being on a first surface and a second Extending between the surfaces and symmetrically disposed around a first axis, wherein the RF power supply is coupled to the first surface, and a diameter aspect ratio is about GG()1/mm to about Q Q25/mm, wherein the cross section A surface extends between the first surface and the second surface. 19. A method of depositing a film comprising the steps of: forming a plasma in a processing region of a chamber using a radio frequency (RF) power supply, the RF power supply coupled to one of the chambers a multiple component target having a first surface contacting the processing region of the chamber and a second surface facing the first surface; translating an electromagnetic tube relative to the multiple component target, wherein When the electromagnetic tube is translated and the plasma is formed, the electromagnetic tube is opposite to the multi-component dry material, and the point is located at the -th position; and the "selling one 1 - Rong ·', \ 夕The film is disposed on a substrate disposed on one of the substrate supports in the chamber. The method for depositing a film onto a substrate comprises the steps of: transporting the month b to the chamber a plasma formed in the processing zone, wherein the transporting means includes delivering RF power from one of a radio frequency (RF) power supply to a multi-component target and delivering it from a DC power supply. DC (four) to the multi-component dry material, the more The component target has a first surface contacting the processing region of the chamber and a second surface facing the first surface; translating an electromagnetic tube relative to the multi-component dry material, wherein when the electromagnetic tube is translated and the electricity Forming a slurry, the electromagnetic tube is located at a first position relative to a center point of the multicomponent component; adjusting a bias voltage on an electrode disposed adjacent to a substrate receiving surface of the substrate support Adjusting the bias voltage by changing a capacitance of a variable capacitor to control the bias voltage reached by the electrode relative to an electrical ground; pressurizing the processing region for at least 20 mTorr; and depositing a a metal alloy film to a substrate 70 disposed on the receiving surface of the substrate