201035575 六、發明說明： 【發明所屬之技術領域】 本案所屬之技術領域係關於半導體檢測機台，特別是一種 具有靜電放電裝置的探針檢測機台。 【先前技術】201035575 VI. Description of the invention: [Technical field to which the invention pertains] The technical field to which the present invention pertains relates to a semiconductor inspection machine, and more particularly to a probe inspection machine having an electrostatic discharge device. [Prior Art]
由於人體或機械都可能累積大量靜電荷，並在瞬間形成大 量電荷放電’從而破壞相關電路元件；為確保電路元件的電氣 性能符合預期，不受靜電破壞，目前許多電路元件都必須先經 過模擬上述放電的「靜電衝擊」（Electrostatic Discharge，簡稱 ESD)檢測，以例如4000伏特、甚至8000伏特的電壓，在極 短時間(例如10 ns)内將靜電荷迅速釋放，在受測元件上造成急 速的單一脈衝，並隨後量測受測元件是否受損，藉此淘汰無= 耐受靜電放電的元件。 為確保此種靜電衝擊測試的一貫性，由靜電放電裝置所提 供、並施加至受測元件的電流受到嚴格規範，若施加電壓是 4000伏特，電流最高峰值約為2.67安培±10%，且必須如圖1 所示，在5至25 ns的短暫瞬間，將電流由最高峰值的1〇%提 升至90%，且電流在峰值後的15〇 ± 2〇耶降回至峰值的 36.8%。尤其在瞬間電流發生的過程中，不可以產生如圖2所 示振簠的振幅達峰值15%的狀況，否則實驗將不被接受。 目前靜電放電裝置的模擬電路如圖3所示，具有一個1〇〇 PF的電容器，以儲存靜電荷供上述靜電放電時使用，外部迴 路則界定等效阻抗約為1500Ω，藉以保持上述測試電流的波 形不致受到破壞，而，即使在靜電放電裝置2的儀器輸出端 量測上述測試電流波形符合預期，並不代表經過長距離傳輸後 的，形仍符合規範’尤其當傳輸迴路並不講究時，測試電流發 生嚴重失真情況就成為普遍的問題。如何提升輸出波形在傳 時的理想性，也成為測試業需關注的問題。 另方面，如圖4所示的測試機台是目前許各主逡 造過程中常用的檢測機台，圖中所示的結構，包; 201035575 7、對應於基座7的一組探針檢測裝置3，且此探針檢測裳置3 包括兩組壓力導接組件32 ’每組壓力導接組件32則分別設置 有一根金屬探針324 ’可檢測例如電路完成的發光二極體晶粒 9 ° Ο 當上萬顆分離的LED晶粒9(以一顆晶粒9為例釋)被放置 於一片置放載台72上，再將置放載台72置放於上述機台的美 座7上，由兩根金屬探針324逐-對每顆晶粒9點測，施^ 個致能電訊號，使受測晶粒9發光，並以一組作為光學資料擷 取裝置8的域測n度量發絲態並轉麟電子資訊 處理裝置5，從而由處理裝置5判別晶粒9優劣。 若能將上職3、® 4的靜餘電裝置2錢台結合，者 ^進能，減纽鋪置成本及廠房内的佔^ ΪΪ置程、提高產出效率。然而，由於靜電放 iff，放的同電壓，必須遠離其他測試儀器的電路，而距 上轉鶴紐敎真，如何克服此種兩 難問題，即成為整合上述機台的關鍵。 【發明内容】 受能 探。目的，在提供—種能提供理想靜電測試脈衝的 機台本個再-目的’在提供—種可簡倾顺_探針檢測 並_種==;電^2針檢測機台，係供以靜電衝擊 含：-個基座-纟且=?_^的翻半導體元件，該機台包 探針檢測裝置，包括至一組對應該基座之 供電氣接觸而可供應-個預^力处導接^件，f分別具有一組 至少-個受測端之金屬探斜.疋致此減至該待測半導體元件 休針，一組接收該待測半導體元件受該 201035575 預定致能訊號時之輸出資料的處理裝置；及一組具有一對傳輸 線，且該對傳輸線具有一個低於預定數值之阻抗值、使得該靜 電放電裝置輸出並傳輪至該探針檢測裝置之金屬探針的高壓 靜電衝擊訊號阻尼振盪(damped oscillation)係低於一個預定範 圍的傳輸裝置。Since the human body or the machine may accumulate a large amount of static charge and form a large amount of charge discharge in an instant to destroy the relevant circuit components; in order to ensure that the electrical performance of the circuit components meets expectations and is not damaged by static electricity, many circuit components must first be simulated as described above. The discharge of Electrostatic Discharge (ESD) detects rapid release of static charge in a very short time (for example, 10 ns) at a voltage of, for example, 4000 volts or even 8000 volts, causing rapid on the device under test. A single pulse, and then measuring whether the device under test is damaged, thereby eliminating components that are not resistant to electrostatic discharge. To ensure the consistency of this electrostatic shock test, the current supplied by the electrostatic discharge device and applied to the device under test is strictly regulated. If the applied voltage is 4000 volts, the maximum peak current is about 2.67 amps ± 10%, and must As shown in Figure 1, at a brief instant of 5 to 25 ns, the current is increased from 1〇% to 90% of the highest peak, and the current drops back to 36.8% of the peak at 15〇± 2〇 after the peak. Especially in the process of instantaneous current generation, the amplitude of the amplitude of the vibration as shown in Fig. 2 is not 15%, otherwise the experiment will not be accepted. At present, the analog circuit of the electrostatic discharge device is shown in Fig. 3. It has a capacitor of 1 〇〇 PF to store static charge for the above electrostatic discharge, and the external circuit defines an equivalent impedance of about 1500 Ω, thereby maintaining the above test current. The waveform is not damaged, and even if the above test current waveform is measured at the instrument output end of the electrostatic discharge device 2, it does not mean that after long-distance transmission, the shape still conforms to the specification, especially when the transmission circuit is not paying attention to it. A severe distortion of the test current becomes a common problem. How to improve the ideality of the output waveform in the transmission time has become a problem that the testing industry needs to pay attention to. On the other hand, the test machine shown in Fig. 4 is a commonly used test machine in the main manufacturing process, and the structure shown in the figure, package; 201035575 7. A set of probe detection corresponding to the base 7 Device 3, and the probe detecting skirt 3 includes two sets of pressure guiding assemblies 32'. Each set of pressure guiding assemblies 32 is respectively provided with a metal probe 324' to detect, for example, a completed LED die 9 ° Ο When tens of thousands of separated LED dies 9 (illustrated by one die 9) are placed on a placement stage 72, and the placement stage 72 is placed on the stand of the above machine. On the 7th, two metal probes 324 are used to measure each of the crystal grains 9 points, and an enabling electrical signal is applied to cause the measured crystal grains 9 to emit light, and a group is used as the domain of the optical data capturing device 8. The n-measurement hairline state is measured and the electronic information processing device 5 is switched, so that the processing device 5 discriminates the merits of the crystal grains 9. If you can combine the 2, 4, and 4 static power units, you can increase the cost of the installation and the cost of the plant, and increase the output efficiency. However, due to the static discharge, the same voltage must be kept away from the circuits of other test instruments, and how to overcome these dilemmas is the key to integrating the above machines. [Summary of the Invention] Able to be explored. The purpose is to provide a kind of machine that can provide ideal electrostatic test pulse. This re-purpose 'is provided in a kind of simple tilting _ probe detection and _ kind ==; electric ^ 2 needle detection machine, is supplied with static electricity The impact includes: - a pedestal - 纟 and = _ ^ turned semiconductor components, the machine package probe detection device, including a set of power supply gas contacts corresponding to the pedestal can supply - a pre-force guide The components respectively have a set of at least one metal probe of the tested end, so that the semiconductor component to be tested is dropped, and a group of receiving the semiconductor component to be tested is subjected to the 201035575 predetermined enable signal. a processing device for outputting data; and a set of high-voltage static electricity having a pair of transmission lines, the pair of transmission lines having an impedance value lower than a predetermined value, causing the electrostatic discharge device to output and transmit to the probe detecting device The damped oscillation is a transmission device that is below a predetermined range.
綜上所述’本發明揭露一種系統整合的檢測半導體用之探 針檢測機台，並利用阻抗匹配的傳輸裝置連結探針檢測裝置與 靜電放電裝置，減少靜電衝擊訊號在系統中的傳輸失真、保持 輸出波形之完整性而傳送高壓衝擊訊號，不僅增加機台的檢測 項Θ、更提供穩定的訊號傳輸及高準確性的檢測。 【實施方式】 有關本發明之前述及其他技術内容、特點與功效，在以下 配合參考圖式之較佳實施例的詳細說明中，將可清楚的呈現。 為便於說明，本發明所述之待測半導體元件以已經切割分離之 發光二極體晶圓的晶粒為例示。 請參照圖5,本發明之探針檢測機台丨，(以下簡稱為機台Γ) 包含有-個基座7’、-組靜電放電裝置2,、-組探針檢測裝 置3’、一組傳輸裝置4,、一組處理裝置5，以及一组 娜裝置(®未示）。 該基座7,可供放置一個置放載台72,，以供安置待測的晶 粒9’而接受探針檢測裝置3,的檢驗。本例中，探針檢測裝置 具有兩支宛如手臂、窄端彼此相對的壓力導接組件幻，， 於端部之金屬探針324,，使其與基座7,相對移動，依 序接觸已切齡離之LED晶粒9，。 4,電該金屬探針似以本案所麟之傳輪裝置 電裝置2，’避免靜電放電裝置2,所釋放之大量 傳輸至晶粒9,的二受繼過財，產生嚴重的阻尼 號^合⑽a—)，確保傳輸至受測晶粒9,受測端的訊 而在本例中’傳輸裝置4，包括絕緣材料以及一對由金屬導 201035575 電編織網之傳輸線，其構造如圖7所示，以絕緣 r個大致狀的預定間隔距離〇隔開兩條傳 =42 ’使兩條傳輪線幻，大致沿彼此平行的方向延伸 42’延伸方向為—長向L;使得此種特殊結構 輸裝置4在—個預定長度(例如30公分)内，其等效靜雷 谷量低於1〇pF、等效串聯電感值低於1.MH，尤其，當本發 ^傳f裝置4,在傳輸100廳峨時，其等效阻抗低於150 = 許靜電放電裝置與受測元件間的距離被延 約至30公勿，從而保持探針檢測裝置與靜電放電裝置 Ο ❾ f的距離’使得探針檢測裝置不會受到靜電放電裝置的高 電干擾。 ^ 作完靜電对受能力的檢測之後’如圖8所示，此In summary, the present invention discloses a system-integrated probe detecting machine for detecting semiconductors, and uses a impedance matching transmission device to connect the probe detecting device and the electrostatic discharge device to reduce transmission distortion of the electrostatic shock signal in the system. Maintaining the integrity of the output waveform and transmitting high-voltage shock signals not only increases the detection range of the machine, but also provides stable signal transmission and high-accuracy detection. The above and other technical contents, features, and advantages of the present invention will be apparent from the following detailed description of the preferred embodiments of the invention. For convenience of explanation, the semiconductor component to be tested according to the present invention is exemplified by a die of a light-emitting diode wafer that has been cut and separated. Referring to FIG. 5, the probe detecting machine platform (hereinafter referred to as "machine table") of the present invention includes a base 7', a group of electrostatic discharge devices 2, a set of probe detecting devices 3', and a A group transfer device 4, a set of processing devices 5, and a set of Na devices (not shown). The susceptor 7 can be placed on a placement stage 72 for receiving the crystal particles 9' to be tested for inspection by the probe detecting device 3. In this example, the probe detecting device has two pressure guiding components, such as arms and narrow ends, opposite to each other, and the metal probe 324 at the end moves relative to the base 7, and sequentially contacts the The LED die is 9 years old. 4. The metal probe is similar to the electric device 2 of the transmission device of the present invention. 'To avoid the electrostatic discharge device 2, the large amount of the released material is transmitted to the die 9, and the second is passed, resulting in a severe damping number^ (10)a-), ensure transmission to the measured die 9, the terminal under test, in this case 'transmission device 4, including insulating material and a pair of transmission lines of metal-conducting 201035575 electric woven mesh, its structure is shown in Figure 7. It is shown that the two transmissions are separated by a predetermined spacing distance 〇 from the r-shaped openings, so that the two transmission wheels are illusory, extending in a direction parallel to each other, 42' extending in the direction of the long direction L; The structural transmission device 4 is within a predetermined length (for example, 30 cm), and its equivalent static thunder amount is less than 1 〇pF, and the equivalent series inductance value is lower than 1.MH, especially when the present device transmits the device 4 When transmitting 100 halls, the equivalent impedance is lower than 150 = the distance between the electrostatic discharge device and the device under test is extended to about 30, thereby maintaining the distance between the probe detecting device and the electrostatic discharge device Ο ❾ f 'The probe detection device is not subject to high electrical interference from the electrostatic discharge device. ^ After the static electricity is tested for the ability, as shown in Figure 8, this
^件^的Ϊ屬探針议仍接觸晶粒9’受測表面的兩G ^ itt受處理裝置5’指令，提供一個預定致能訊號，例如 電⑺L給LED晶粒9’使其發光，再由光學資料擷取裝詈 學倾，麵發絲形轉換為f喊料傳送予處理 哀置5接收。 件是領域者可以輕易理解，若待測半導體元 受的另一種結構，在晶圓未被分離為個別 =月j受測，以其領面為發光侧面、並且以相反面彼此導接 作為共同接地，則如圖9申請人所採用之檢測機台，是以， 導f組件32’·接觸受測面上的受測端，並以共同接地面 t另-受測端’而藉由—片具有導電部的置放載台72,，承g 該晶圓，從而導接所有晶粒的共同接地部分至基座7”。 觀由則糊巾具有靜電放電裝置的騎檢職台，其探 針檢測裝置3除以壓力導接組件32"的金聽針324"電 =置在置，載台72’•的晶粒之上述受測端外，還包括一組彈性 導電件36";而本例之基座7"本身不僅可供導電，還包括 延伸導電平自76"，可使触祕触置4 於其上彈性伸臟導通·。 邮Μ件36 201035575 導雷性ίϊί36”如圖1〇所示’外型細長’具有一個 導電4 361、與導電部361"的導芯365"、彈性體363"以及一The 探针 探针 议 仍 仍 仍 仍 仍 仍 仍 仍 仍 仍 仍 探针 探针 晶粒 晶粒 晶粒 晶粒 晶粒 晶粒 晶粒 晶粒 晶粒 晶粒 晶粒 晶粒 晶粒 晶粒 晶粒 晶粒 晶粒 晶粒 晶粒 晶粒 晶粒 晶粒 晶粒 晶粒 晶粒 晶粒 晶粒 晶粒 晶粒 晶粒 晶粒 晶粒 晶粒Then, the optical data is taken and loaded, and the surface hair is converted into the f-send material and sent to the processing. It is easily understood by the field that if the semiconductor element to be tested is subjected to another structure, the wafer is not separated into individual = month j, and the collar is illuminated side and the opposite side is connected to each other as a common Grounding, as shown in Figure 9 by the applicant's testing machine, is that the f-assembly 32'· contacts the measured end of the measured surface, and with the common grounding surface t-the measured end' by - a placement stage 72 having a conductive portion for receiving the wafer to conduct a common ground portion of all of the dies to the pedestal 7". The draping station has an electrostatic discharge device for the inspection station. The probe detecting device 3 is divided by the gold receiving pin 324" of the pressure guiding component 32", and the above-mentioned measuring end of the die of the loading table 72'•, and a set of elastic conductive members 36"; In this case, the pedestal 7" itself is not only electrically conductive, but also extends the conductive flat from 76", so that the touch-sensitive touch 4 can be elastically stretched on it. Post code 36 201035575 Guide lightning ίϊί36" Figure 1A shows the 'outline slender' having a conductive 4 361 and a conductive core 361"", Elastomer 363" and one
個，緣管367” ；該導電部避，用以接觸延伸導電平台％"，务 ?簧狀的彈性體363"被麗縮時，可使導芯365" J 輸細細路，藉此流通高壓 絕』傳^裝置構造可參照圖U，該對傳輸線包括被 Ο, the edge tube 367"; the conductive portion avoids, for contacting the extended conductive platform %", the spring-like elastic body 363" when being retracted, the guiding core 365" Refer to Figure U for the structure of the circulating high voltage transmission device, and the pair of transmission lines including the bedding
Q Ϊ輸^可使高雜電衝擊訊號不因傳輸«置而嚴重失 異H，施加至受測半導體元件時，仍可確保符合規範。 斜」：、1本發明尚可依待測物品作不襲化。例如圖12， 正fD晶粒9”，，致麟雜9"，時，可能採用兩組 針324…且接組件32"’則隨之被設計成各有兩根金屬探 力。，可同時對晶粒9"'施放高壓靜電以檢測其靜電耐受能 太路上所述者’僅為本發明實施例而已，當不能以此限定 施之細°即’大凡依本發明申請專利範圍及發明說 ,^ :所作之簡單的等效變化與修飾，皆應仍屬本發明專利 /尚盖之知圍内0 【囷式簡單說明】 =1係靜電衝擊測試的電流·時間理想曲線圖； 糸有嚴重阻尼振虽的靜電衝擊測試的電流_時問曲線圖. 圖3係靜電放電裝置的電路圖；_電流_曲線圖’ 圖4係習知之探針檢測機台示意圖； 圖5係第一實施例之立體示意圖； 靜電放電裝置藉傳輸裝置與金屬探針連結之示意圖； 圖係部分傳輸裝置之放大構造示意圖； 201035575 探針檢測裝置與處理 圖8係第一實施例之光學資料操取裝置、 裝置相對作用關係示意圖； 圖9係第二實施例之立體示意圖； 圖10係圖9之彈性導電件放大示意圖； 圖11係圖9之傳輸裝置截面示意圖； 圖12係第三實施例，各有兩根金屬探針之壓力導接組件與高 亮度粒之俯視圖。Q Ϊ ^ 可使 可使 高 高 高 高 高 高 高 高 高 高 高 高 高 高 高 高 高 高 高 高 高 高 高 高 高 高 高 高 高 高 高 高Oblique": 1, the invention can still be used according to the items to be tested. For example, in Figure 12, the positive fD die 9",, to the Lin 9 ", it is possible to use two sets of pins 324... and the assembly 32"' is then designed to have two metal probes. It is only an embodiment of the present invention to apply high-voltage static electricity to the crystal grain 9" to detect its electrostatic withstandability. When it is not possible to limit the application of the fineness, the patent scope and invention of the invention are Say, ^: The simple equivalent changes and modifications made by the invention should still belong to the patent of the invention/sold cover. [Simplified description of 囷 type] =1 The current and time ideal curve of electrostatic shock test; Fig. 3 is a circuit diagram of an electrostatic discharge device; Fig. 3 is a circuit diagram of an electrostatic discharge device; Fig. 4 is a schematic diagram of a conventional probe detection machine; Fig. 5 is a first implementation Schematic diagram of an example of an electrostatic discharge device connected to a metal probe by a transmission device; schematic diagram of an enlarged configuration of a partial transmission device; 201035575 probe detection device and processFig. 8 is an optical data manipulation device of the first embodiment, Device Figure 9 is a perspective view of a second embodiment; Figure 10 is an enlarged schematic view of the elastic conductive member of Figure 9; Figure 11 is a schematic cross-sectional view of the transmission device of Figure 9; Figure 12 is a third embodiment, each having two A top view of the pressure guiding assembly of the root metal probe and the high brightness grain.
【主要元件符號說明】 Γ…機台 2 ’ 2’…靜電放電裝置 3 ’ 3’，3”···探針檢測裝置 32 ’ 32’，32"，32"’…壓力 導接組件 324，324’，324"，324'” … 金屬探針 36"…彈性導電件 36Γ…導電部 365”…導芯 363"…彈性體 367”…絕緣管 4’，4"…傳輸装置 41’···絕緣材料 42’…傳輸線 422"…導電傳輪片 5 ’ 5’…處理裝置 7 ’ 7’，7"…基座 72, 72’’72”···置放載台 76"···延伸導電平台 8 ’ 8’···光學資料擷取裝置 9’9’ ’9"’···晶粒[Description of main component symbols] Γ...machine 2 ' 2'...electrostatic discharge device 3 ' 3',3"···probe detecting device 32 '32',32",32"'...pressure guiding assembly 324, 324',324",324'" ... metal probe 36"...elastic conductive member 36Γ...conductive portion 365"...lead core 363"...elastomer 367"...insulation tube 4',4"...transmission device 41'·· Insulation material 42'...transmission line 422"...conducting transfer wheel 5' 5'...processing device 7 '7',7"...base 72, 72''72"···mounting stage 76"··· Extended conductive platform 8 ' 8'···Optical data acquisition device 9'9' '9"'···