201027817 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種隔著間隔配置有磁性感測部與磁鐵， 且用以檢測受到上述磁鐵作用之外部磁場之變化的磁性檢 測裝置。 【先前技術】 磁性檢測裝置係包含磁性感測部以及磁鐵而構成。先 則，磁性感測部係於印刷基板上安裝磁性檢測元件，並進 ® 行樹脂密封，進而將外部連接端子鉚接於印刷基板上而形 成。 於上述構成中，存在磁性感測部之製造作業性差之問 題。 [專利文獻1]曰本專利特開2004-39666號公報 [專利文獻2]曰本專利特開2005-5360號公報 [專利文獻3]曰本專利特開2005-235507號公報 ’ ^ 【發明内容】 ❹ [發明所欲解決之問題] 於專利文獻1中揭示有對金屬板框架1〇〇注塑成形有本體 部11之構成（專利文獻1之[0029]攔，圖5(B))。 又’於上述本體部11上形成有導線插入用槽15，並將導 線30插入至導線插入用槽15中（專利文獻1之[〇〇31]攔，圖 5(C))。 繼而’藉由接著劑而使IC(Integrated Circuit，積體電路） 裸晶片60接合於金屬板20之上面（專利文獻1之[0036]攔， 144335.doc 201027817 圖8(A))，接著，進行打線接合及樹脂密封（專利文獻i之 [0037]欄 ’ [〇〇38]攔，圖 8、圖 9)。 然而’於上述專利文獻1所揭示之發明中，必須將導線 插入至形成於本體部之導線插入用槽中，其作業性依然較 差，又，於專利文獻！、2之構成中，無法有效地促進薄型 化。 又，專利文獻1至3所揭示之發明均未揭示具有磁鐵及磁 性感測部之磁性檢測裝置之構成。 尤其，磁性檢測裝置中，搭載於磁性感測部中之感測器 晶片之相對於磁鐵之定位精度，對於提高檢測精度而言較 為重要。 於磁性檢測裝置中，構成磁性感測部之感測器晶片為樹 脂密封，而先前之構《，則必須將構成磁性感㈣之封褒 體（package)自身之外形用於對準。然而，存在由於封裝體 與感測器晶片之間之位置精度之不均、及封裝體外形之不 均’而導致感測器晶片之相對磁鐵之定位精度劣化之問 題。 因此，本發明係為冑決上述先前課題研究而成者，其 的尤其在於提供-種可作業性良好地形成且進而可使感 裔晶片高精度對準之磁性檢測裝置及其製造方法。 [解決問題之技術手段] 本發明係-種磁性檢測裝置，其包括磁鐵、及磁性感 部’該磁性感測部係與上述磁鐵相對向而配置，且包含 乳特性會因來自上述磁鐵之外部磁場之變化而產生變化 144335.doc 201027817 磁性檢測it件’上述磁性檢測裝置之特徵在於： 上述磁性感測部構成為包括：感測H晶 磁性檢測元件；導線架，其包含複數個導線部，並且與上 述磁性檢測元件電性連接；基座部，其用以設置上述感測 益晶片·’樹脂體’其以露出上述基座部、各導線部之外部 連接端子、及與上述磁性檢測元件連接之連接區域之方 t成形於上料線架上；以及密封材，其密封上述感測 1§晶片。 藉此’與先前相比’可藉由簡單之構成而形成磁性感測 部，從而可提高磁性感測部之製造作業性。又，亦可有助 於薄型化。 此處，較好的是上述基座部包含於上述導線架中 成。 又，於本發明中，較好的是使將上述感測器晶片設置於 上述基座部時之定位部、與將上述磁性感測部設置於外殼 參（case)時之定位部共用，且該共用之定位部係設置於上述 樹脂體或者上述導線架上。藉此，可提高上述感測器晶片 對外殼之定位精度，進而可提高上述感測器晶片對磁鐵之 定位精度’從而可形成檢測精度優異的磁性檢測裝置。 又，可提高磁性感測部相對外殼之組裝作業性。此時，若 共用之上述定位部設置於上述樹脂體上，則可容易地形成 定位部。 又’於本發明巾’較好的是上述磁性❹彳部及上述磁鐵 之設置部均設置於上述外殼上。藉此，可減少零件件數， 144335.doc 201027817 且可更有效地提高感測器晶片對磁鐵之定位精度。 又’於本發明中，較好的是上述樹脂體形成於上述導線 架之同-平面區域内，並且上述外部連接端子自上述樹脂 體之側面突出。藉此，可更有效地促進薄型化。 又’本發明係—種磁性檢測裝置之製造方法，上述磁性 檢測裝置包括磁鐵、及磁性感測部，該磁性感測部係與上 述磁鐵相對向而配置’ i包含電氣特性會因來自上述磁鐵 之外部磁場之變化而產生變化的磁性檢測元件，且該磁性 檢測裝置之製造方法之特徵在於：具有以下步驟， (a) 加工金屬板，形成用以設置包含磁性檢測元件之感 測器晶片之基座部、及包含複數個導線部而成之導線架； (b) 以露出上述基座部、各導線部之外部連接端子、及 與上述磁性檢測元件電性連接之連接區域的方式，使樹脂 體成形於上述導線架上； (c) 於上述基座部上設置上述感測器晶片，並電性連接 上述磁性檢測元件與上述連接區域之間；以及 (d) 於上述感測器晶片上藉由密封材來進行密封； 形成上述磁性感測部。 如上所述，與先前相比，可藉由簡單之構成而形成磁性 感測部，且可提高磁性感測部之製造作業性，故可促進薄 型化。 又，於本發明中，較好的是，於上述（b)步驟中在上述 樹脂體上形成定位部； 於上述（c)步驟中將上述定位部作為基準，將上述感測器 】44335.doc -6 - 201027817 晶片設置於上述基座部上；進而， 於上述⑷步弊之後，將與實施上述⑷步驟時共用之上 述定位部作為基準，將上述磁性感測部設置於外殼上。藉 二匕，可提高上述感測器晶片對外殼之定位精度，進而可提 高上述感測器晶片對磁鐵之定位精度，從而可製造檢測精 度優異之磁性檢測裝置。又，可提高磁性感測部相對外殼 之組裝作業性。 ❹ 又’於本發明巾，較好的是於上料殼上設置上述磁性 感測部及上述磁鐵之設置部，且於共用之上述外殼上設置 上述磁性感測部及上述磁鐵。藉此，可減少零件件數，且 可更有效地提高感測器晶片對磁鐵之定位精度。 又，於本發明中，較好的是於上述⑻步称中，將上述 樹脂體成形於上述導線架之同一平面區域内，並使上述外 部連接端子自上述樹脂體之側面突出。藉此，可有效地促 進薄型化。 又’於本發明中，較好的是於上述⑷步驟中，由上述金 屬板形成複數個上述導線架相連而成之環箍材，並於上述 (b)步驟中’將上述樹脂體成形於各導線架上，進而於上述 ⑷步驟之後具有分離每—導線架之步驟。藉此，可一次性 形成多個磁性感測部，從而可提高製造效率。 又，於本發明中，較好的是於上述⑷步驟中， 相鄰導線部間之連結部，並於上述⑻步驟與上述: 之間’切斷上述連結部。 ’ 藉此，可於樹脂體之成形時，抑制各導線邹之不均，從 144335.doc 201027817 而可使樹脂體適當地成形於導線架上。 又，於本發明中，較好的是於上述（a)步驟中，使各導線 部之前端經由連結部而連結於上述金屬板之框體上，並於 上述（b)步驟與上述（(〇步驟之間，切斷上述連結部，使各 導線部自上述金屬板之框體中切斷。藉此，便可於樹脂體 之成形時’抑制各導線部之不均，從而可使樹脂體適當地 成形於導線架上。 [發明之效果] 根據本發明’與先前相比，可藉由簡單之構成而形成磁 性感測部，從而可提高磁性感測部之製造作業性。又，可 有助於薄型化。 ▲進而，可提高感測器晶片對外殼之定位精度，進而可提 高感測器“對磁鐵之定位精度，故可製造檢測精度優異 之磁性檢測裝置。X ’可提高磁性感測部對外殼之組裝作 業性。 【實施方式】 圖1係本實施形態之磁性檢測裝置之局部分解立體圖， 圖2係本實施形態之磁性感測部之平面圖，圖3係沿圖2所 不之A-A線切斷後自箭頭方向觀察之磁性感測部之剖面 圖，圖4係除去密封材之狀態下之磁性感測部之局部放大 平面圖’圖5係構成磁性感測部之導線架之局部平面圖。 再者，於圖3中，省略了感測器晶片之圖示。 圖1所示之磁性檢測裝置丨係包括磁鐵2、外殼3、以及磁 性感測部4而構成。於本實施形態中，磁鐵2形成為環狀， 144335.doc 201027817 1並以可旋轉之方式得到支撐。 外之形狀，且磁鐵2之動作亦並 其固定於未圖示之軸承上 再者’磁鐵2亦可為環狀以 非僅限於旋轉。 於外殼3之表面3a±，形成有用以收納磁鐵二之凹部$。 該凹部5構成磁鐵2之設置部。又，外殼仏背面成為磁性 感測部4之設置部3be即’於圖i之實施形態中，磁鐵2及 磁性感測部4之設置部係設置於共用之外殼3上。於上述磁[Technical Field] The present invention relates to a magnetic detecting device in which a magnetic sensing portion and a magnet are disposed with a space therebetween, and a change in an external magnetic field that is subjected to the action of the magnet is detected. [Prior Art] The magnetic detecting device is composed of a magnetic sensing unit and a magnet. First, the magnetic sensing unit is formed by mounting a magnetic detecting element on a printed circuit board, sealing the resin, and riveting the external connecting terminal to the printed circuit board. In the above configuration, there is a problem that the manufacturing workability of the magnetic sensing unit is poor. [Patent Document 1] JP-A-2004-39666 [Patent Document 2] Japanese Patent Laid-Open Publication No. 2005-5360 (Patent Document 3) Japanese Patent Laid-Open Publication No. 2005-235507 ❹ [Problems to be Solved by the Invention] Patent Document 1 discloses a configuration in which a main body portion 11 is injection-molded to a metal plate frame 1 (Patent Document 1 [0029], FIG. 5 (B)). Further, the wire insertion groove 15 is formed in the main body portion 11, and the wire 30 is inserted into the wire insertion groove 15 (Patent Document 1 [〇〇31], Fig. 5 (C)). Then, an IC (Integrated Circuit) bare wafer 60 is bonded to the metal plate 20 by an adhesive (Patent Document 1 [0036], 144335.doc 201027817 FIG. 8(A)), and then, Wire bonding and resin sealing are performed (Patent Document i [0037] column '[〇〇38], Figure 8, Figure 9). However, in the invention disclosed in the above Patent Document 1, it is necessary to insert the lead wire into the wire insertion groove formed in the main body portion, and the workability is still poor, and in the patent document! In the configuration of 2, the thinning cannot be effectively promoted. Further, none of the inventions disclosed in Patent Documents 1 to 3 discloses a configuration of a magnetic detecting device having a magnet and a magnetic sensing portion. In particular, in the magnetic detecting device, the positioning accuracy of the sensor wafer mounted on the magnetic sensing unit with respect to the magnet is important for improving the detection accuracy. In the magnetic detecting device, the sensor wafer constituting the magnetic sensing portion is a resin seal, and in the prior art, the outer shape of the package constituting the magnetic sexy (four) must be used for alignment. However, there is a problem that the positioning accuracy of the opposing magnet of the sensor wafer is deteriorated due to the unevenness of the positional accuracy between the package and the sensor wafer and the unevenness of the package shape. Accordingly, the present invention has been made in view of the above-mentioned prior art, and in particular, it provides a magnetic detecting device which is excellent in workability and which can accurately align a sensor-sensitive wafer and a method of manufacturing the same. [Technical means for solving the problem] The present invention relates to a magnetic detecting device including a magnet and a magnetic sensing portion, wherein the magnetic sensing portion is disposed opposite to the magnet, and the milk containing property is caused by the outside of the magnet The magnetic detecting device is characterized in that: the magnetic detecting unit is configured to include: a sensing H crystal magnetic detecting element; and a lead frame including a plurality of lead portions, And electrically connected to the magnetic detecting element; the base portion for arranging the sensing wafer "resin body" to expose the base portion, external connection terminals of the lead portions, and the magnetic detecting element A square t of the connected connection region is formed on the upper wire frame; and a sealing material that seals the above-described sensing 1 § wafer. Thereby, the magnetic sensing portion can be formed by a simple configuration as compared with the prior art, and the manufacturing workability of the magnetic sensing portion can be improved. Also, it can contribute to thinning. Here, it is preferable that the base portion is included in the lead frame. Further, in the invention, it is preferable that the positioning portion when the sensor chip is placed on the base portion is shared with the positioning portion when the magnetic sensing portion is provided in the case portion, and The shared positioning portion is provided on the resin body or the lead frame. Thereby, the positioning accuracy of the sensor wafer to the outer casing can be improved, and the positioning accuracy of the sensor wafer with respect to the magnet can be improved, thereby forming a magnetic detecting device excellent in detection accuracy. Moreover, the assembling workability of the magnetic sensing portion with respect to the outer casing can be improved. At this time, if the shared positioning portion is provided on the resin body, the positioning portion can be easily formed. Further, in the towel of the present invention, it is preferable that the magnetic dam portion and the installation portion of the magnet are provided on the outer casing. In this way, the number of parts can be reduced, and the positioning accuracy of the sensor wafer to the magnet can be more effectively improved. Further, in the invention, it is preferable that the resin body is formed in the same-plane region of the lead frame, and the external connection terminal protrudes from a side surface of the resin body. Thereby, the thinning can be promoted more effectively. Further, the present invention relates to a method of manufacturing a magnetic detecting device, wherein the magnetic detecting device includes a magnet and a magnetic sensing unit, and the magnetic sensing unit is disposed opposite to the magnet, and includes an electrical characteristic due to the magnet. a magnetic detecting element that changes in the change of the external magnetic field, and the manufacturing method of the magnetic detecting device is characterized in that: (a) processing the metal plate to form a sensor chip for arranging the magnetic detecting element a base portion and a lead frame including a plurality of lead portions; (b) exposing the base portion, an external connection terminal of each lead portion, and a connection region electrically connected to the magnetic detecting element Forming a resin body on the lead frame; (c) disposing the sensor chip on the base portion and electrically connecting the magnetic detecting element to the connection region; and (d) the sensor chip Sealing is performed by a sealing material; the magnetic sensing portion is formed. As described above, the magnetic sensing portion can be formed by a simple configuration as compared with the prior art, and the manufacturing workability of the magnetic sensing portion can be improved, so that the thickness can be promoted. Further, in the invention, preferably, in the step (b), the positioning portion is formed on the resin body; and in the step (c), the positioning portion is used as a reference, and the sensor is 44335. Doc -6 - 201027817 The wafer is placed on the base portion; further, after the step (4), the magnetic sensing portion is placed on the casing with reference to the positioning portion shared in the step (4). By using the second electrode, the positioning accuracy of the above-mentioned sensor chip to the outer casing can be improved, and the positioning accuracy of the magnet of the sensor chip can be improved, thereby manufacturing a magnetic detecting device with excellent detection precision. Further, the assembling workability of the magnetic sensing portion with respect to the outer casing can be improved. Further, in the present invention, it is preferable that the magnetic sensing portion and the magnet mounting portion are provided on the upper casing, and the magnetic sensing portion and the magnet are provided on the common casing. Thereby, the number of parts can be reduced, and the positioning accuracy of the magnet of the sensor wafer can be more effectively improved. Further, in the invention, it is preferable that in the step (8), the resin body is molded in the same planar region of the lead frame, and the external connection terminal protrudes from a side surface of the resin body. Thereby, the thinning can be effectively promoted. Further, in the present invention, it is preferred that in the step (4), a plurality of the lead frames are formed by the plurality of lead frames, and the resin body is formed in the step (b). On each of the lead frames, there is a step of separating each of the lead frames after the step (4). Thereby, a plurality of magnetic sensing portions can be formed at one time, so that manufacturing efficiency can be improved. Further, in the invention, it is preferable that the connecting portion between the adjacent lead portions is in the step (4), and the connecting portion is cut between the step (8) and the above. </ RTI> By this, it is possible to suppress the unevenness of the respective wires at the time of molding the resin body, and the resin body can be appropriately molded on the lead frame from 144335.doc 201027817. Further, in the invention, it is preferable that the front end of each lead portion is connected to the frame of the metal plate via the connecting portion in the step (a), and in the above step (b) and the above (( Between the steps, the connecting portion is cut, and the lead portions are cut from the frame of the metal plate. Thereby, the unevenness of each lead portion can be suppressed during the molding of the resin body, and the resin can be obtained. [Effects of the Invention] According to the present invention, the magnetic sensing portion can be formed by a simple configuration as compared with the prior art, and the manufacturing workability of the magnetic sensing portion can be improved. ▲In addition, the positioning accuracy of the sensor chip to the outer casing can be improved, and the sensor can be improved in positioning accuracy of the magnet, so that a magnetic detecting device with excellent detection precision can be manufactured. [Embodiment] Fig. 1 is a partially exploded perspective view of the magnetic detecting device of the embodiment, Fig. 2 is a plan view of the magnetic sensing unit of the embodiment, and Fig. 3 is taken along Fig. 2. No A - A cross-sectional view of the magnetic sensing portion viewed from the direction of the arrow after the A line is cut, and FIG. 4 is a partially enlarged plan view of the magnetic sensing portion in the state where the sealing material is removed. FIG. 5 is a part of the lead frame constituting the magnetic sensing portion. In addition, in Fig. 3, the illustration of the sensor wafer is omitted. The magnetic detecting device shown in Fig. 1 includes a magnet 2, a casing 3, and a magnetic sensing unit 4. This embodiment is constructed. The magnet 2 is formed in a ring shape, and is rotatably supported by the 144335.doc 201027817 1. The outer shape and the action of the magnet 2 are also fixed to a bearing (not shown). The ring shape is not limited to rotation. A recessed portion $ for accommodating the magnet 2 is formed on the surface 3a± of the outer casing 3. The recessed portion 5 constitutes a mounting portion of the magnet 2. Further, the back surface of the outer casing becomes the magnetic sensing portion 4 In the embodiment of Fig. i, the magnet 2 and the magnetic sensing unit 4 are disposed on the common casing 3.
❷ 鐵2與磁性感測部4之間隔著間隔，4 、+、a尬1 t 』阳有间Μ 使上述磁鐵2與磁性感 測部4於非接觸之狀態下對向配置。 磁性感測部4係包含感測器晶片、導線架、樹脂體、及 密封材而構成。 如圖4所示，上述感測器晶片構成為包括包含磁性檢測 元件6、7之第i感測器晶片1〇、以及包含磁性檢測元件8、 9之第2感測器晶片u。 各磁性檢測元件6〜9係電氣特性會因來自磁鐵2之外部磁 場之變化而產生變化之元件。磁性檢測元件6〜9較好的是 GMR(Giant magnetoresistance，巨磁阻）元件、 (Anisotropic magnetoresistance’ 各向異性磁阻）元件、咬 者TMR(Tunneling magnetoresistance，穿隧磁阻）元件等之 利用磁阻效應（MR(magnetoresistive，磁阻）效應）之磁阻效 應元件。其中，根據與磁鐵2之位置關係，亦可藉由霍耳 元件等而形成磁性檢測元件6〜9。 當磁性檢測元件6〜9為GMR元件或TMR元件時，於積層 膜中包括磁化被固定之固定磁性層，而該固定磁性層之固 144335.doc 201027817 定磁化方向於搭載於第1感 0、7與搭載於第2感測器晶 係為反向平行。 測器晶片10上之磁性檢测元件 片Η上之磁性檢測元件8、9中 又，磁性檢測元件6、7之平面形狀並無特別限定，但為 上述GMR元件時，較好的是形成為可提高電阻值之曲折 狀。 由於因磁鐵2旋轉，作用於各磁性檢測元件㈠之外部磁 場會產生變動’因此當各磁性檢測元件6〜9為磁阻效應元 件時，各磁性檢測元件6〜9之電阻值會產生變化。再者， 磁性檢測元件6、7彼此為相同之電阻變化，且磁性檢測元 件8、9彼此為相同之電阻變化，但磁性檢測元件6、7與磁 性檢測元件8、9為相反之電阻變化。即，例如當磁性檢測 元件6、7為最小電阻值時，磁性檢測元件8、9則 阻值，當磁性檢測元件6、7為最大電阻值時，磁性檢測元 件8、9則為最小電阻值。 如圖4所示，於各磁性檢測元件6〜9之兩側形成有電極墊 6a、6b〜9a、9b ° 導線架12係對金屬板加工而形成者，如圖5所示，其係 包含複數個導線部13〜16而構成。各導線部13〜16除了外部 連接端子之部分以外，均形成於同一平面内。如圖4、圖5 所示，於第1導線部13上一體形成有用以設置上述第丨感測 器晶片1 0及第2感測器晶片11之基座部丨7。即，基座部i 7 亦由金屬形成，且包含於導線架12中。第i導線部13之前 端之外部連接端子13 a係接地端子（參照圖i、圖2、及圖 144335.doc -10- 201027817 5)。由此，基座部17亦成為接地電位。 第2導線部14之前端之外部連接端子Ma係輸入端子（電 源子），第3導線部15之前端及第4導線部16之前端之各 外部連接端子15a、16a分別係輸出端子。 再者’各導線部13〜16之外部連接端子13a〜16a之分類亦 可為上述以外者。例如，亦可使第1導線部13之外部連接 端子Ua為輸入端子，使第2導線部14之外部連接端子14aThe neodymium iron 2 and the magnetic sensing unit 4 are spaced apart from each other, and 4, +, a 尬 1 t 』 阳 Μ Μ 上述 上述 磁铁 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 The magnetic sensing unit 4 includes a sensor wafer, a lead frame, a resin body, and a sealing material. As shown in Fig. 4, the sensor wafer is configured to include an ith sensor wafer 1A including magnetic detecting elements 6, 7 and a second sensor wafer u including magnetic detecting elements 8, 9. Each of the magnetic detecting elements 6 to 9 is an element whose electrical characteristics change due to a change in the external magnetic field from the magnet 2. The magnetic detecting elements 6 to 9 are preferably magnetic materials such as GMR (Giant magnetoresistance), (Anisotropic magnetoresistance), and TMR (Tunneling Magnetoresistance). Magnetoresistive effect element of the MR (magnetoresistive effect). Among them, the magnetic detecting elements 6 to 9 can be formed by a Hall element or the like depending on the positional relationship with the magnet 2. When the magnetic detecting elements 6 to 9 are GMR elements or TMR elements, the fixed magnetic layer in which the magnetization is fixed is included in the laminated film, and the fixed magnetic layer is fixed to the first sense 0, 129335.doc 201027817 7 is antiparallel to the crystal system mounted on the second sensor. Further, in the magnetic detecting elements 8 and 9 on the magnetic detecting element piece on the measuring chip 10, the planar shape of the magnetic detecting elements 6 and 7 is not particularly limited, but in the case of the above-described GMR element, it is preferably formed as It can increase the meandering of the resistance value. Since the external magnetic field acting on each of the magnetic detecting elements (1) fluctuates due to the rotation of the magnet 2, when the respective magnetic detecting elements 6 to 9 are magnetoresistance effect elements, the resistance values of the respective magnetic detecting elements 6 to 9 change. Further, the magnetic detecting elements 6, 7 have the same resistance change, and the magnetic detecting elements 8, 9 have the same resistance change, but the magnetic detecting elements 6, 7 and the magnetic detecting elements 8, 9 have opposite resistance changes. That is, for example, when the magnetic detecting elements 6, 7 are at the minimum resistance value, the magnetic detecting elements 8, 9 are resistance values, and when the magnetic detecting elements 6, 7 are at the maximum resistance value, the magnetic detecting elements 8, 9 are the minimum resistance values. . As shown in FIG. 4, electrode pads 6a, 6b to 9a, 9b are formed on both sides of each of the magnetic detecting elements 6 to 9. The lead frame 12 is formed by processing a metal plate, as shown in FIG. The plurality of lead portions 13 to 16 are formed. Each of the lead portions 13 to 16 is formed in the same plane except for the portion of the external connection terminal. As shown in Figs. 4 and 5, a base portion 7 for providing the second sensor wafer 10 and the second sensor wafer 11 is integrally formed on the first lead portion 13. That is, the base portion i 7 is also formed of metal and is included in the lead frame 12. The external connection terminal 13a at the front end of the i-th lead portion 13 is a ground terminal (see Fig. i, Fig. 2, and Fig. 144335.doc -10- 201027817 5). Thereby, the base portion 17 also becomes a ground potential. The external connection terminal Ma at the front end of the second lead portion 14 is an input terminal (power source), and the external connection terminals 15a and 16a at the front end of the third lead portion 15 and the front end of the fourth lead portion 16 are output terminals. Further, the classification of the external connection terminals 13a to 16a of the respective lead portions 13 to 16 may be other than the above. For example, the external connection terminal Ua of the first lead portion 13 may be an input terminal, and the external connection terminal 14a of the second lead portion 14 may be connected.
為接地端子D 第1感測器晶片10及第2感測器晶片n係介隔接著劑而固 疋於基座部17上。並且，如圖4所示，各磁性檢測元件6〜9 ”各導線邛13〜16及基座部丨7之間係藉由打線接合而電性 連接如圖4所不，磁性檢測元件6之電極墊以與基座部17 係.，主由金屬線i 8而電性連接。如上所述，基座部口係接地 電位，故可將基座部17用作第丨導線部丨3，且可連接於基 座部17。又，如圖4所示，磁性檢測元件6之電極墊补、與 第3導線部15之間係經由金屬線18而電性連接。又，如^ 所示’磁性檢測元件7之電極墊〜與第2導線部14之間係經 由金屬線18而電性連接。又，如圖情示，磁性檢測元件7 之電極墊7b與第4導線部16之間係經由金屬線以而電性連 接。又’如圖4所示，磁性檢測元件8之電極㈣與第！導 線部13之間係經由金屬線18而電性連接。又，如圖4所 不’磁性檢測元件8之電極㈣與請線部16之間係經由 金屬線18而電性連接。又，如圖4所示，磁性檢測元件9之 電極㈣與第2導線部14之間係經由金屬線η 144335.doc 201027817 接。又，如圖4所示，磁性檢測元件9之電極墊处與第3導 線部1 5之間係經由金屬線丨8而電性連接。 此處，經由金屬線18而與各磁性檢測元件6〜9(電極墊 6b 9a 9b)連接之各導線部13〜16及基座部I?之各部 分成為導線架12之連接區域。 再者，基座部17並非必須與導線架12所包含之導線部13 體形成’亦可與導線部分離。於該情形時，經由金屬線 18電性連接磁性檢測元件6之電極墊以與第丨導線部η之間 即可。其中，若使用導線架12之一部分來構成基座部17， 則可使金屬板之材料良率良好，並且可提高生產率。 可藉由上述電性配線，來構成磁性檢測元件6〜9之全橋 電路’從而可獲得較大之差動輸出。 如圖1〜圖3所示，於導線架12上成形有絕緣性之樹脂體 2〇，並藉由樹脂體2〇來填充各導線部之間、以及各導線部 之上下面。 樹脂體20為熱塑性樹脂則易於藉由射出成形來實現外形 精度故而較佳。 如圖1〜圖4所示’樹脂體20係以露出各外部連接端子 13a〜16a、基座部17、及各導線部13〜16之與磁性檢測元件 6〜9連接之連接區域之方式’成形於導線架丨2上。 上述樹脂體20正好形成於導線架之同一平面區域内， 且各外部連接端子13a〜16a自樹脂體20之側面而向外側突 出（參照圖2、圖3)。 如圖4所示’於樹脂體2〇之大致中央區域，形成有包含 144335.doc -12- 201027817 近似圓形之凹部之空間部20a，且於該空間部2〇a露出有基 座邛17、及各導線部丨3〜丨6之與磁性檢測元件6〜9連接之連 接區域。因此，可如圖4所示於露出於樹脂體2〇之空間部 2〇a内之基座部17上，設置第i感測器晶片ι〇及第2感測器 η曰片11，且可將各電極墊以、6b〜9a、9b與各導線部 之間及與基座部17之間電性連接。 再者，當使樹脂體20成形時，係以利用樹脂層丨9同時填 φ 充各導線部13〜16之間，且使樹脂層19之表面與導線部 13〜16之表面達到大致同一平面的方式而成形（參照圖4)。 如圖1〜圖3所示，上述空間部2〇3内係藉由絕緣性之樹脂 (松、封材）22而密封。作為密封材之樹脂22例如為環氡樹 脂。再者，樹脂22亦可為熱塑性樹脂、熱固性樹脂中之任 一者。 將上述感測器晶片1 〇、11設置於基座部丨7時，係以形成 於樹脂體20上之定位部21為基準而璲行。如圖i、圖2所 ❹ 示，使定位部2 1為4個，但並非必須全部用作定位部2玉， 亦可任意設定定位部21之個數。於本實施形態中，上述定 位部21係由孔所形成。該孔可為貫通孔，又，亦可為未貫 通之具有底部之孔。 上述定位部21亦可用作將磁性感測部4設置於外殼3之設 置部3 b時之定位機構。具體而言，於外殼3之設置部儿側 之面上，形成有與定位部21相對應之未圖示之複數個（例 如4個）突起部《而且，藉由壓入等方法而使該等突起部嵌 合於構成相應之定位部21之孔内’藉此，將磁性感測部4 144335.doc -13- 201027817 安裝於外殼3上。即，於樹脂體20上設置有將感測器晶片 10、11設置於基座部17時以及將磁性感測部4設置於外殼3 時之共用之定位部21。 再者’於本實施形態中，係藉由設置於磁性感測部4之 樹脂體20上之孔來構成共用之定位部2丨，但亦可設置突起 部來代替孔’並將該突起部壓入外殼3上所設置之相應的 凹部内’從而使兩者凹凸嵌合。進而，亦可使用導線架U 之未被樹脂體20覆蓋之一部分來構成共用之定位部。 使用圖6〜圖1 1之各圖，對本實施形態之磁性感測部斗之 製造方法進行說明。各圖均為平面圖。 於圖ό所示之步驟中，由金屬板3〇形成複數個導線架q 相連而成之環箍材31。 圖7係放大表示圖6之一個導線架12之放大平面圖。如圖 7所示’分別隔著間隔而形成構成導線架丨2之*個導線部 13〜16，且使用以設置感測器晶片10、11之基座部17與第又 導線部13 —體形成。又，如圖7所示，形成有連接相鄰之 第1導線部13與第2導線部14之間的連結部32、以及連接第 _ 3導線部15與第4導線部16之間的連結部33。又，如圖7所 示，於金屬板30之框體3如上，形成有用以支撐導線架12 之支撐部34。又，如圖7所示，各導線部13〜16之前端（之 、 後作為外σ卩連接端子之部分）13c〜i6c係經由連結部 · 13b〜16b，而連結於金屬板3〇之框體3〇a上。 其次，於圖8所示之步驟中，使樹脂體20成形於每一個 導線架12上。此時，較好的是利用熱塑性樹脂來形成樹脂 144335.doc • 14· 201027817 體20。樹脂體20係形成於導線架12之同一平面區域内。於 圖8所示之步驟中，於樹脂體2〇之大致中央位置處形成包 含凹部之空間部2〇a，且於上述空間部2〇a内露出著基座部 17及各導線部13〜16之與磁性檢測元件6〜9電性連接之連接 區域。再者，於樹脂體20之成形時，係以利用樹脂層19同 時填充各導線部13〜16之間，且使樹脂層19之表面與基座 部17及導線部13〜16之表面達到大致同一平面的方式而成 _ 形（參照圖4)。又，於圖8之步驟中，使各導線部13〜16之 前端13c〜16c自樹脂體20之側面突出。 又，當使樹脂體20成形時，如圖8所示，於樹脂體2〇上 形成孔狀之定位部21。又，於正好露出導線部之連結部 32、33之位置上形成貫通之孔35、36。 如上所述，第1導線部13與第2導線部14之間、以及第3 導線部15與第4導線部16之間分別係藉由連結部32、33而 連結，進而各導線部13〜16之前端13c〜16c係經由連結部 • Ub〜161)而連結於金屬板3〇之框體30a上，藉此，可於樹脂 體20之成形時’抑制各導線部13〜16之不均，從而可使樹 脂體20適當地成形於導線架12上。 其次’於圖9所示之步驟中’將各連結部丨3b〜丨6b自金屬 板30之框體30a上切斷，並使各導線部13〜16之前端 13c〜16c自金屬板30之框體30a上分離。分離後之各導線部 13〜16之前端將成為外部連接端子13a〜16a。 繼而’對各外部連接端子13a〜16a進行彎折加工。又， 於圖9之步驟中’切斷自孔35、36中所露出之連結部32、 144335.doc -15· 201027817 33 ’使各導線部13〜16電性切離。再者’使圖9之步驟於感 測器晶片安裝之後進行電性測試之前結束即可，但若於感 測器晶片安裝之後進行導線架之切斷處理，則感測器晶片 有可能會受到上述切斷時之應力之影響，故較好的是於感 測器晶片安裝之前進行圖9之步锁。The grounding terminal D is used to fix the first sensor wafer 10 and the second sensor wafer n to the base portion 17 via an adhesive. Further, as shown in FIG. 4, the respective magnetic detecting elements 6 to 9" are electrically connected between the respective lead wires 13 to 16 and the base portion 7 by wire bonding as shown in FIG. 4, and the magnetic detecting element 6 is The electrode pad is connected to the base portion 17. The main electrode is electrically connected by the metal wire i 8. As described above, the base portion is grounded, so that the base portion 17 can be used as the second lead portion 丨3. Moreover, it can be connected to the base portion 17. Further, as shown in Fig. 4, the electrode pad of the magnetic detecting element 6 and the third lead portion 15 are electrically connected via the metal wire 18. Further, as shown in Fig. The electrode pad of the magnetic detecting element 7 and the second lead portion 14 are electrically connected via the metal wire 18. Further, as shown, between the electrode pad 7b of the magnetic detecting element 7 and the fourth lead portion 16 The electrodes are electrically connected via a metal wire. Further, as shown in FIG. 4, the electrode (four) of the magnetic detecting element 8 and the first wire portion 13 are electrically connected via the metal wire 18. Further, as shown in FIG. The electrode (four) of the magnetic detecting element 8 and the wire portion 16 are electrically connected via the metal wire 18. Further, as shown in FIG. 4, the magnetic detecting element 9 The pole (4) and the second lead portion 14 are connected via a metal wire η 135335.doc 201027817. Further, as shown in FIG. 4, the electrode pad of the magnetic detecting element 9 and the third lead portion 15 are connected via a metal wire.丨8 is electrically connected. Here, each of the lead portions 13 to 16 and the base portion I to which the respective magnetic detecting elements 6 to 9 (electrode pads 6b 9a to 9b) are connected via the metal wires 18 serves as a lead frame. Further, the base portion 17 does not have to be formed with the lead portion 13 included in the lead frame 12, and may be separated from the lead portion. In this case, the magnetic detecting element 6 is electrically connected via the metal line 18. The electrode pad may be interposed between the electrode pad and the second wire portion η. When the base portion 17 is formed using one portion of the lead frame 12, the material yield of the metal plate can be improved, and productivity can be improved. The electrical wiring constitutes a full bridge circuit ' of the magnetic detecting elements 6 to 9 to obtain a large differential output. As shown in FIGS. 1 to 3, an insulating resin body 2 is formed on the lead frame 12. 〇, and between the wire portions and the wires by the resin body 2〇 The resin body 20 is a thermoplastic resin, and it is easy to achieve the shape accuracy by injection molding. As shown in Fig. 1 to Fig. 4, the resin body 20 is used to expose the external connection terminals 13a to 16a and the pedestal. The portion 17 and the connection regions of the lead portions 13 to 16 connected to the magnetic detecting elements 6 to 9 are formed on the lead frame 2. The resin body 20 is formed in the same plane region of the lead frame, and each The external connection terminals 13a to 16a protrude outward from the side surface of the resin body 20 (see Figs. 2 and 3). As shown in Fig. 4, 'in the substantially central region of the resin body 2', a 144335.doc -12- is formed. 201027817 The space portion 20a of the approximately circular recess is exposed, and the base portion 17 and the connection region of the lead portions 丨3 to 丨6 connected to the magnetic detecting elements 6 to 9 are exposed in the space portion 2A. Therefore, as shown in FIG. 4, the i-th sensor wafer ι and the second sensor η 曰 11 can be provided on the base portion 17 exposed in the space portion 2A of the resin body 2〇, and Each of the electrode pads can be electrically connected between the respective lead portions and the base portion 17 at 6b to 9a and 9b. Further, when the resin body 20 is molded, the resin layers 9 are simultaneously filled with φ to fill the respective lead portions 13 to 16, and the surface of the resin layer 19 and the surfaces of the lead portions 13 to 16 are substantially flush with each other. Formed by the way (see Figure 4). As shown in Figs. 1 to 3, the space portion 2〇3 is sealed by an insulating resin (loose, sealing material) 22. The resin 22 as a sealing material is, for example, a cyclic resin. Further, the resin 22 may be either a thermoplastic resin or a thermosetting resin. When the sensor wafers 1 and 11 are placed on the base portion 7 , the positioning portions 21 formed on the resin body 20 are used as a reference. As shown in Fig. 2 and Fig. 2, the number of the positioning portions 21 is four, but it is not necessary to use them all as the positioning portion 2, and the number of the positioning portions 21 can be arbitrarily set. In the present embodiment, the positioning portion 21 is formed by a hole. The hole may be a through hole or a non-transparent hole having a bottom. The positioning portion 21 can also be used as a positioning mechanism when the magnetic sensing portion 4 is provided in the installation portion 3b of the casing 3. Specifically, a plurality of (for example, four) projections (not shown) corresponding to the positioning portion 21 are formed on the surface on the side of the installation portion of the outer casing 3, and the method is also carried out by a method such as press-fitting. The protrusions are fitted into the holes constituting the corresponding positioning portions 21, whereby the magnetic sensing portion 4 144335.doc -13 - 201027817 is mounted on the outer casing 3. In other words, the resin body 20 is provided with a positioning portion 21 that is common when the sensor wafers 10 and 11 are placed on the base portion 17 and when the magnetic sensing portion 4 is placed in the outer casing 3. In the present embodiment, the common positioning portion 2 is formed by a hole provided in the resin body 20 of the magnetic sensing unit 4, but a protrusion may be provided instead of the hole' and the protrusion may be provided. Pressed into the corresponding recesses provided in the outer casing 3 so that the two are concave-convex. Further, a portion of the lead frame U that is not covered by the resin body 20 may be used to constitute a common positioning portion. A method of manufacturing the magnetic sensing unit bucket of the present embodiment will be described with reference to each of Figs. 6 to 11 . Each figure is a plan view. In the step shown in Fig. ,, a hoop material 31 in which a plurality of lead frames q are connected is formed by a metal plate 3〇. Fig. 7 is an enlarged plan view showing an outline of a lead frame 12 of Fig. 6. As shown in FIG. 7, 'the respective lead portions 13 to 16 constituting the lead frame 2 are formed at intervals, and the base portion 17 and the second lead portion 13 of the sensor wafers 10 and 11 are disposed. form. Further, as shown in FIG. 7, a connection portion 32 connecting the adjacent first lead portion 13 and the second lead portion 14 and a connection between the third lead portion 15 and the fourth lead portion 16 are formed. Part 33. Further, as shown in Fig. 7, the frame portion 3 of the metal plate 30 is formed with a support portion 34 for supporting the lead frame 12 as described above. Further, as shown in Fig. 7, the front ends of the lead portions 13 to 16 (the portions which are the outer σ卩 connecting terminals) 13c to i6c are connected to the frame of the metal plate 3 via the connecting portions 13b to 16b. Body 3〇a. Next, in the step shown in Fig. 8, the resin body 20 is formed on each of the lead frames 12. At this time, it is preferred to form a resin by using a thermoplastic resin 144335.doc • 14· 201027817 body 20. The resin body 20 is formed in the same planar region of the lead frame 12. In the step shown in FIG. 8, a space portion 2a including a concave portion is formed at a substantially central position of the resin body 2'', and the base portion 17 and the respective lead portions 13 are exposed in the space portion 2a. A connection region of 16 electrically connected to the magnetic detecting elements 6 to 9. Further, in the molding of the resin body 20, the respective lead portions 13 to 16 are simultaneously filled by the resin layer 19, and the surface of the resin layer 19 and the surfaces of the base portion 17 and the lead portions 13 to 16 are approximated. The same plane is formed into a _ shape (refer to Figure 4). Further, in the step of Fig. 8, the leading ends 13c to 16c of the lead portions 13 to 16 project from the side faces of the resin body 20. Further, when the resin body 20 is molded, as shown in Fig. 8, a hole-shaped positioning portion 21 is formed on the resin body 2''. Further, through holes 35 and 36 are formed at positions where the connecting portions 32 and 33 of the lead portion are exposed. As described above, the first lead portion 13 and the second lead portion 14 and the third lead portion 15 and the fourth lead portion 16 are connected by the connecting portions 32 and 33, respectively, and the lead portions 13 to The front ends 13c to 16c of the 16 are connected to the frame 30a of the metal plate 3 via the connecting portions Ub to 161), thereby suppressing the unevenness of the lead portions 13 to 16 during the molding of the resin body 20. Thus, the resin body 20 can be appropriately formed on the lead frame 12. Next, in the step shown in Fig. 9, the respective connecting portions 3b to 6b are cut from the frame 30a of the metal plate 30, and the leading ends 13c to 16c of the lead portions 13 to 16 are made from the metal plate 30. The frame 30a is separated. The front ends of the respective lead portions 13 to 16 after separation will become external connection terminals 13a to 16a. Then, the external connection terminals 13a to 16a are bent. Further, in the step of Fig. 9, the connecting portions 32 and 144335.doc -15·201027817 33' exposed from the holes 35 and 36 are cut off to electrically separate the lead portions 13 to 16 from each other. Furthermore, the step of FIG. 9 may be completed before the electrical test of the sensor wafer is mounted, but if the lead frame is cut after the sensor wafer is mounted, the sensor wafer may be subjected to In the above-mentioned influence of the stress at the time of cutting, it is preferable to perform the step lock of Fig. 9 before the sensor wafer is mounted.
接下來’於圖ίο之步驟中安裝感測器晶片1〇、η。圖1〇 係放大表示形成於樹脂體20上之空間部20a之局部放大平 面圖。如圖10所示，第i感測器晶片10及第2感測器晶片UNext, the sensor wafers 1 〇, η are mounted in the steps of Fig. ί. Fig. 1 is an enlarged plan view showing a portion of the space portion 20a formed on the resin body 20 in an enlarged manner. As shown in FIG. 10, the i-th sensor wafer 10 and the second sensor wafer U
係介隔接著劑而固定（晶片接合）於基座部17上。此時，第i 感測器晶片10及第2感測器晶片u之設置，係以圖8所示之 樹脂體20上所形成之定位部21為基準而進行。進而，搭載 於感測器晶片10、11上之各磁性檢測元件6〜9之電極墊 6a、6b〜9a、9b(參照圖4)之間與空間部2〇a内所露出之各導 線部13〜16及基座部17，係藉由打線接合而電性連接。It is fixed (wafer bonded) to the base portion 17 via an adhesive. At this time, the arrangement of the i-th sensor wafer 10 and the second sensor wafer u is performed based on the positioning portion 21 formed on the resin body 20 shown in Fig. 8. Further, the lead wires exposed between the electrode pads 6a, 6b to 9a, and 9b (see FIG. 4) of the respective magnetic detecting elements 6 to 9 mounted on the sensor wafers 10 and 11 and the space portion 2A are formed. 13 to 16 and the base portion 17 are electrically connected by wire bonding.
其次，於圖11之步驟中，藉由樹脂22而將形成於各樹脂 體20上之空間部2〇a内密封，並藉由樹脂22而覆蓋空間部 族内所露出之感測器晶片1〇、u、基座部17、各導線部 13 1 6及用於電性連接之各金屬線丄8(參照圖4)等。繼 而’切斷與金屬板30之框體3〇a連接之各導線㈣之支揮 部34。藉此，可同時製造複數個磁性感測部4。 針對磁性感測部4之電性測試，可如_所示，於分離 成一個個磁性感測以之後進行，或者亦可於切斷支 34之則之多個磁性感測部相連的狀態（多個相連之狀能 連續進行。可藉由於多個相連之狀態下進行，來提高測試 144335.doc -16- 201027817 效率。 繼而’將圖11所示之磁性感測部4設置於圖1所示的外殼 3之設置部3b。此時，係以形成於樹脂體2〇上之定位部21 為基準，將磁性感測部4設置於外殼3上。於上述外殼3上 形成有用以收納磁鐵2之凹部5，並且於外殼3之凹部5内設 置磁鐵2。設置磁鐵2之時序並無特別限定。 根據上述說明’於本實施形態中，可經由導線架12之形 Φ 成、樹脂體20之成形、感測器晶片10、11之設置及電性連 接、以及樹脂22之密封之簡單步驟，而以簡單之構成製造 磁性感測部4。尤其可藉由使用本實施形態之構成，而由 環箱材31之形成起至零件組裝為止直接相連之步驟製造磁 性感.測部4 ^因此，與先前相比，可提高製造作業性。 又’本實施形態之構造係使樹脂體20成形於導線架丨2之 同一平面區域内，並使各導線部13〜16之前端自樹脂體20 之側面突出而成為外部連接端子13a〜16a，因此如圖3所 ❹ 示’可極薄地形成樹脂體20之厚度，故可有效地促進薄型 化。 尤其於圖1所示之磁性檢測裝置1中，為獲得良好之檢測 精度，感測器晶片10、11對外殼3、進而對磁鐵2之位置對 準極為重要。由於感測器晶片1 〇、11係藉由樹脂22而密 封’故無法使感測器晶片10、11直接與外殼3位置對準後 將磁性感測部4設置於外殼3上。相對於此，於本實施形態 中，係於樹脂體20上形成有將感測器晶片1 〇、〗丨設置於基 座部17時、以及將磁性感測部4設置於外殼3時之共用之定 144335.doc 17 201027817 位21。藉此’可提高上述感測器晶片10、11對外殼3之 疋位精度，進而可提高上述感測器晶片1 〇、11對磁鐵2之 疋位精度’故可製造檢測精度優異之磁性檢測裝置1。 又，可提高磁性感測部4對於外殼3之組裝作業性。又，形 成基座部17作為導線架12之同一平面區域内之一部分，並 以該基座部17為基準面來設置感測器晶片10、11，因此感 測器晶片10、11與磁鐵2之間之高度方向上之尺寸精度亦 容易實現。又，由於基座部17係與一個導線部一體形成， 故可將基座部17用作導線部，從而可將基座部17用作與磁 性檢測元件電性連接之連接區域。 又，如圖1所示，磁性感測部4及磁鐵2之設置部係設置 於共用之外殼3上。藉此，可減少零件件數，故可有效地 k尚感測器晶片1 〇、i i對磁鐵2之定位精度。 【圖式簡單說明】 圖1係本實施形態之磁性檢測裝置之局部分解立體圖； 圖2係本實施形態之磁性感測部之平面圖； 圖3係沿圖2所示之A_A線切斷後自箭頭方向觀察之磁性 感測部之剖面圖； 圖4係除去密封材之狀態下之磁性感測部之局部放大平 面圖； 圖5係構成磁性感測部之導線架之局部平面圖； 圖6係表示本實施形態之磁性感測部之製造方法之一步 驟圖（平面圖）； 圖7係圖6所示之一個導線架之放大平面圖； 144335.doc •18· 201027817 :8:接者圖6所進行之-步驟圖(平面圈). 圖9係接著圖8所進行之-步驟圖(平面；)： );及 圖係接著圖9所進行之-步驟圖（局部放大平面 圖11係接著圖ίο所進行之一步驟圖（平面圖）面 【主要元件符號說明】Next, in the step of Fig. 11, the space portion 2A formed on each of the resin bodies 20 is sealed by the resin 22, and the sensor wafer 1 exposed in the space group is covered by the resin 22. And u, the base portion 17, the respective lead portions 13 16 and the respective metal wires 8 (see FIG. 4) for electrical connection. Then, the branch portion 34 of each of the wires (4) connected to the frame 3A of the metal plate 30 is cut. Thereby, a plurality of magnetic sensing portions 4 can be simultaneously manufactured. The electrical test for the magnetic sensing unit 4 may be performed after being separated into one magnetic sensing as shown in the figure _, or may be connected to the plurality of magnetic sensing portions of the cutting branch 34 ( The plurality of connected shapes can be continuously performed. The efficiency of the test 144335.doc -16 - 201027817 can be improved by performing a plurality of connected states. Then, the magnetic sensing portion 4 shown in Fig. 11 is set in Fig. 1 The mounting portion 3b of the outer casing 3 is shown. In this case, the magnetic sensing portion 4 is placed on the outer casing 3 with reference to the positioning portion 21 formed on the resin body 2A. The outer casing 3 is formed to accommodate the magnet. The magnets 2 are provided in the recesses 5 of the outer casing 3. The timing of providing the magnets 2 is not particularly limited. According to the above description, in the present embodiment, the shape of the lead frame 12 can be made into the resin body 20. The magnetic sensing unit 4 is manufactured in a simple configuration by the simple steps of forming, electrically connecting the sensor wafers 10 and 11, and sealing the resin 22. In particular, by using the configuration of the embodiment, From the formation of the ring box 31 to the assembly of parts In the step of directly connecting the magnetism sensing unit 4, the manufacturing workability can be improved as compared with the prior art. The structure of the present embodiment is such that the resin body 20 is formed in the same plane region of the lead frame 丨2. Since the front ends of the lead portions 13 to 16 protrude from the side faces of the resin body 20 and become the external connection terminals 13a to 16a, the thickness of the resin body 20 can be extremely thinned as shown in Fig. 3, so that the thin shape can be effectively promoted. In particular, in the magnetic detecting device 1 shown in Fig. 1, in order to obtain good detection accuracy, the sensor wafers 10, 11 are extremely important for the alignment of the outer casing 3 and thus the magnet 2. Since the sensor wafer 1 Since the 〇 and 11 are sealed by the resin 22, the sensor wafers 10 and 11 cannot be directly aligned with the outer casing 3, and the magnetic sensing unit 4 is placed on the outer casing 3. In contrast, in the present embodiment, In the resin body 20, when the sensor wafer 1 is placed on the base portion 17, and when the magnetic sensing portion 4 is placed in the outer casing 3, a common 144335.doc 17 201027817 bit 21 is formed. This can improve the above sensor crystal 10 and 11 improve the clamping accuracy of the outer casing 3, and further improve the clamping accuracy of the magnets 2 of the sensor wafers 1 and 11 respectively. Therefore, the magnetic detecting device 1 having excellent detection accuracy can be manufactured. The assembly workability of the portion 4 with respect to the outer casing 3. Further, the base portion 17 is formed as one of the same planar regions of the lead frame 12, and the sensor wafers 10, 11 are disposed with the base portion 17 as a reference surface. The dimensional accuracy in the height direction between the sensor wafers 10, 11 and the magnet 2 is also easily realized. Further, since the base portion 17 is integrally formed with one lead portion, the base portion 17 can be used as the lead portion. Thereby, the base portion 17 can be used as a connection region electrically connected to the magnetic detecting element. Further, as shown in Fig. 1, the magnetic sensing portion 4 and the installation portion of the magnet 2 are provided on the common casing 3. Thereby, the number of parts can be reduced, so that the positioning accuracy of the sensor chips 1 〇 and i i to the magnet 2 can be effectively performed. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a partially exploded perspective view of the magnetic detecting device of the embodiment; Fig. 2 is a plan view of the magnetic sensing portion of the embodiment; Fig. 3 is taken from the arrow A_A line shown in Fig. 2 FIG. 4 is a partial enlarged plan view of the magnetic sensing portion in a state in which the sealing material is removed; FIG. 5 is a partial plan view of the lead frame constituting the magnetic sensing portion; One step diagram (plan view) of the manufacturing method of the magnetic sensing portion of the embodiment; FIG. 7 is an enlarged plan view of a lead frame shown in FIG. 6; 144335.doc • 18· 201027817 : 8: Receiver FIG. - Step diagram (planar circle). Fig. 9 is a step diagram (plane;); and; and the diagram followed by Fig. 9 - the step diagram (the partial enlargement plan 11 is followed by the diagram) One step diagram (plan view) surface [main component symbol description]
1 磁性檢測裝置 2 磁鐵 3 外殼 4 磁性感測部 6~9 磁性檢測元件 10、11 感測器晶片 12 導線架 13 〜16 導線部 13 a〜16a 外部連接端子 13b〜16b 、 32 、 33 連結部 17 基座部 20 樹脂體 20a 空間部 21 定位部 22 樹脂（密封材） 30 金屬板 30a 框體 31 環箍材 34 支撐部 35 > 36 孔 144335.doc -19-1 Magnetic detecting device 2 Magnet 3 Case 4 Magnetic sensing unit 6~9 Magnetic detecting element 10, 11 Sensor chip 12 Lead frame 13 to 16 Lead portion 13 a to 16a External connecting terminal 13b to 16b, 32, 33 Connecting portion 17 Base portion 20 Resin body 20a Space portion 21 Positioning portion 22 Resin (sealing material) 30 Metal plate 30a Frame 31 Hoop material 34 Support portion 35 > 36 Hole 144335.doc -19-