TW200917893A - Organic electroluminescent device and fabricating method thereof - Google Patents

Organic electroluminescent device and fabricating method thereof Download PDF

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TW200917893A
TW200917893A TW097130365A TW97130365A TW200917893A TW 200917893 A TW200917893 A TW 200917893A TW 097130365 A TW097130365 A TW 097130365A TW 97130365 A TW97130365 A TW 97130365A TW 200917893 A TW200917893 A TW 200917893A
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Taiwan
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layer
metal oxide
light
derivative
organic
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TW097130365A
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Chinese (zh)
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Shinichi Morishima
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Sumitomo Chemical Co
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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/12Light sources with substantially two-dimensional radiating surfaces
    • H05B33/22Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17Carrier injection layers

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

The object of this invention is to provide an organic electroluminescence device which can be fabricated easily and the luminescence and life properties is excellent and fabricating method thereof. This invention provides the organic electroluminescence device and fabricating method thereof as follow. The organic electroluminescence device includes a anode, a light emitting layer, an cathode and a metal oxide layer disposed between the anode and the light emitting layer or between the cathode and the light emitting layer, and the metal oxide layer is formed by the following steps, (A) depositing metal oxide to the other layer of a forming device to obtain a untreated metal oxide layer, (B) exposing the untreated metal oxide layer in an oxygen-containing surroundings.

Description

200917893 九、發明說明: 【發明所屬之技術領域] 本發明是關於-種有機電致發光200917893 IX. Description of the invention: [Technical field to which the invention pertains] The present invention relates to an organic electroluminescence

Electroluminescence Devices 牛(Orgamc 及其製造方法。 T有時稱為有機肛元件) 【先前技術】 與無機EL it件相比,有機乱元件 如,可於低電壓下驅動、亮度較高、且可容^^憂 顏色的發光,因此為了獲得性能更高的元件,迄今= 試織各嫌料:、已報 爲ίί ’對使用金屬氧化物來作為電子注入層或電洞注 入層專層進行了研究。例如,日本專利特開2·367784 號公報t揭不:於電子注人電極上設置氧化鉬等的無機氧 化物層’來作為高效率的電子注入層。 目前,作為有機EL元件的開發中的一個重大課題, 正謀求開發出一種即便咼亮度地發光亦可長壽命地驅動的 元件。又,亦謀求開發出一種發光效率高、於低電壓下可 獲得高亮度的元件。因此,針對構成元件的各層依然正在 進行探索,以助於解決上述課題。 【發明内容】 本發明的目的在於提供一種可容易地製造、且發光特 性及壽命特性良好的有機EL元件及其製造方法。 本發明者等人在鐾於上述狀況而進行各種研究的過程 200917893 I意外發現,藉由實行先前被認為會降低層雜能 處理、例如將構成元件的金屬氧化物的層曝露於含 = 能夠使有機EL元件的發光特性及壽命特性ί 回的金屬軋化物層,從而完成了本發明。 亦即,根據本發明,提供下述各項: Π]一種有機電致發光元件,其具有陽極、發光層陰 極以及设置於上述陽極與上述發光層之間或者上述發光 層與上述陰極之間的金屬氧化物層,且上述金屬氧化物層 是藉由如下步驟而獲得的層:⑷於構成元件的其他層丄 堆積金屬氧化物而獲得未域理的金屬氧化物層的步驟; 以及(Β)於含氧環境下對上述未經處理的金屬氧化物層 進行曝露處理的步驟。 尸[2]如上述[1]所記載的有機電致發光元件,其中上述金 屬氧化物層是電洞注人層,或者與上述發光層或電洞注入 層直接相接觸而設置著。 [3] 如上述[1]或ρ]所記載的有機電致發光元件,其中 上述金屬氧化物層的可見光透射率大於等於5〇0/〇。 [4] 如上述[1]〜[习中任一項所記載的有機電致發光元 件]其中上述金屬氧化物是選自由鉬氧化物、釩氧化物、 烏氧化物、组氧化物以及該些氧化物的混合物所組成的族 群中。 [5] 如上述[1]〜[4]中任一項所記載的有機電致發光元 其中上述含氧環境是控制在濕度為0.01%〜95%、氧 滾度為0.01%〜3〇%、溫度為1(rc〜6〇t:的範圍内。 200917893 [6]一種製造方法,其是製造如上述[1]〜[5]中任一項 所記载的有機電致發光元件的方法,包括如下步驟:於構 ,元件的其他層上堆積金屬氧化物而獲得未經處理的金屬 氧化物層的步驟;以及將上述未域理金屬氧化物層曝露 於含氧環境下的步驟。 [發明的效果] 本發明的有機EL元件可容易地製造、功率效率高而Electroluminescence Devices (Orgamc and its manufacturing method. T is sometimes called organic anal element) [Prior Art] Compared with inorganic EL it, organic components can be driven at low voltage, high brightness, and can be accommodated. ^^The color of the illuminating, so in order to obtain higher performance components, so far = trial weaving all the suspect:, has been reported as ίί 'the use of metal oxide as an electron injection layer or hole injection layer . For example, JP-A No. 2,367,784 discloses that an inorganic oxide layer such as molybdenum oxide is provided on an electron-injecting electrode as a highly efficient electron injecting layer. At present, as a major issue in the development of organic EL elements, an element that can be driven for a long life even when illuminated with brightness is being developed. Further, an element having high luminous efficiency and high luminance at a low voltage has been developed. Therefore, various layers of constituent elements are still being explored to help solve the above problems. SUMMARY OF THE INVENTION An object of the present invention is to provide an organic EL device which can be easily produced and which has excellent light-emitting characteristics and lifetime characteristics, and a method for producing the same. The inventors of the present invention have conducted various studies in the above-mentioned circumstances. It is unexpectedly found that by performing a layer which is previously considered to reduce the layer of impurity energy, for example, exposing a layer of a metal oxide constituting the element to the inclusion = The present invention has been completed by the luminescent properties and lifetime characteristics of the organic EL device. That is, according to the present invention, the following items are provided: Π] an organic electroluminescence device having an anode, a cathode of a light-emitting layer, and disposed between the anode and the light-emitting layer or between the light-emitting layer and the cathode a metal oxide layer, wherein the metal oxide layer is a layer obtained by the following steps: (4) a step of depositing a metal oxide in another layer constituting the element to obtain a non-domain metal oxide layer; and (Β) The step of subjecting the above untreated metal oxide layer to an exposure treatment in an oxygen-containing atmosphere. [2] The organic electroluminescence device according to the above [1], wherein the metal oxide layer is a hole injecting layer or is directly in contact with the light emitting layer or the hole injecting layer. [3] The organic electroluminescence device according to [1] or [5], wherein the metal oxide layer has a visible light transmittance of 5 〇 0 / 〇 or more. [4] The organic electroluminescence device according to any one of the above [1], wherein the metal oxide is selected from the group consisting of molybdenum oxide, vanadium oxide, cerium oxide, group oxide, and the like In a group of oxides. [5] The organic electroluminescent element according to any one of [1] to [4] wherein the oxygen-containing atmosphere is controlled to have a humidity of 0.01% to 95% and an oxygen rolling degree of 0.01% to 3%. The method of producing the organic electroluminescent device according to any one of the above [1] to [5], wherein the temperature is in the range of 1 (rc to 6 〇t:). And comprising the steps of: depositing a metal oxide on the other layers of the device to obtain an untreated metal oxide layer; and exposing the unlocalized metal oxide layer to an oxygen-containing environment. Advantageous Effects of Invention The organic EL device of the present invention can be easily manufactured and has high power efficiency.

了於低電壓下發光、且壽命長,故可較好地用作背光源 (backlight)用的面狀光源、平板顯示器等裝置。 為讓本發明之上述和其他目的、特徵和優點能更明顯 重’下文特舉較佳實施例’並配合所關式,作詳細說 明如下。 【實施方式】 ,發明的有機EL元件具有陽極、發光層及陰極。再 Ϊ 的有機^元件可於上述陽極與上述發光層之 二Ζίί上述發光層與上述陰極之間更具有其他層, 為二有一具有作 列舉上述箱氧化歸的金屬氧化物,可較好地 =二T鈒氧化物,氧化物、縫化物以及娜 氧化物較好的是:氧:二_尤其好的是銦氧化物, 是五氧化,; •輸物較好的是五氧化二:即好=二= 200917893 發明中所規定的步㈣施〇3成_情況τ, 所^的金屬氧化物層中無法保持Μ〇與〇的租成比j 此時亦可較好地用於本發明中。再 _ 的金屬氧化物可為一種,亦可為兩種或二!乳化物層 亡述金屬氧化物層含有上述金屬氧化物等 物,較好的是實質上由上述金屬 斗 f屬更具㈣言,於將金魏化物層Γ/為金/層:::所下構 物在構成層的物質總量中所占的比例可為較Since it emits light at a low voltage and has a long life, it can be suitably used as a planar light source for a backlight or a flat panel display. The above and other objects, features and advantages of the present invention will become more apparent <RTIgt; [Embodiment] The organic EL device of the invention has an anode, a light-emitting layer, and a cathode. The organic element of the ruthenium may further have another layer between the anode and the light-emitting layer, and the metal layer having the oxidation of the above-mentioned box may be better. The two T 鈒 oxides, oxides, sulphide and samarium oxides are preferably: oxygen: bis is especially good for indium oxide, which is pentoxide, and • the preferred material is pentoxide: that is good =二=200917893 The step (4) specified in the invention is applied to the case τ, and the rent ratio of yttrium and ytterbium in the metal oxide layer cannot be maintained. In this case, it can be preferably used in the present invention. . Further, the metal oxide may be one type or two or two types. The emulsion layer may contain the metal oxide or the like, and it is preferable that the metal layer is substantially more (4). In other words, the proportion of the gold-based layer/Γ/金:/:: the lower structure in the total amount of the constituent materials can be

Wt%以JL,),更好的是大於等於99 工進而更好的是大於等於99.9 wt0/。。 發光物層較好的是電洞注入層’或者與上述 SC 層直接相接觸而設置著。更具體而言, 〇 )與陽極以及電洞傳輸層相接觸而設置著、 (·&quot;_)與陽極以及電子阻擋層相接觸而設置著、 (..i )與電洞注人層以及發光層相接觸而設置著、 (〜)與電洞注人層以及電子阻擋層相接觸而設置著、 (v )與陽極及發光層相接觸而設置著 K中^任一項。底部發光(b〇ttom emission)結構的情 更好的是0·)或〇 ),上述金屬氧化物層通常作 主入層而發揮著功能。頂部發光(top emission)社 =下,更好的是(丨&quot;或(iv),上述金屬氧上 k吊作為電洞傳輸層而發揮著功能。 上述金屬氧化物層的可見光透射率較好的是大於等於 200917893 50/。、小於等於ι〇0%。藉由具有大於等於5〇%、小於等於 100/。的可見光透射率’可較好地用作透過上述金屬氧化物 層而發光的形式的有機a元件。可見光透射率更好的是 大於等於70%、小於等於1〇〇%。藉由具有大於等於7〇%、 小於等於1GG%的可見光透射率,可使光自發光層的更内 部射出,從而有機EL元件的發光效率提高。 上述金屬氧化物層的厚度並無特別限定,較好的〇 nm〜50 nm。Wt% is JL,), and more preferably 99 or more, and even more preferably 99.9 wt0/. . The illuminant layer is preferably provided by the hole injection layer ’ or directly in contact with the SC layer. More specifically, 〇) is provided in contact with the anode and the hole transport layer, and (·&quot;_) is placed in contact with the anode and the electron blocking layer, (..i) and the hole injection layer and The light-emitting layer is provided in contact with each other, (~) is placed in contact with the hole injection layer and the electron blocking layer, and (v) is placed in contact with the anode and the light-emitting layer, and any one of K is provided. The b〇ttom emission structure is more preferably 0·) or 〇), and the above metal oxide layer usually functions as a main in-layer. The top emission company = lower, more preferably (丨) or (iv), the above-mentioned metal oxygen k-hanging functions as a hole transport layer. The above metal oxide layer has a good visible light transmittance. It is greater than or equal to 200917893 50 /., less than or equal to ι 〇 0%. By having a visible light transmittance of 5% or more and 100 Å or less, it can be preferably used for illuminating through the above metal oxide layer. a form of organic a-component. The visible light transmittance is more preferably 70% or more and 1% or less. By having a visible light transmittance of 7〇% or more and 1GG% or less, the light self-luminous layer can be made. Further, the light emission efficiency of the organic EL element is improved by the internal emission, and the thickness of the metal oxide layer is not particularly limited, and is preferably 〇 nm to 50 nm.

丰發明的有機EL元件中 如下步驟而獲得的層: 上返金屬氧化物層是藉g ,鄉叩设付的層: (A)於構成元件的其他層上堆積金屬氧化物而獲本 未、、坐處理的金屬氧化物層的步驟;以及 進行對上絲域㈣金丨氧化糾 EL 巾’構成元件的其他層可為構成有相 元m層’可娜製造倾及所獲得的有機Ε] 陽極結構㈣當選擇。例如,可於設置在基板上^ 層而獲得直接與電極相細 上#署一或者,可在基板上設有電極之後,於電相 展叹+&quot;Γ層或一層以上的其他層例如發光層、電荷注/ :獲荷阻擔層,進而於其上方進行堆積, 接/、該層相接觸的金屬氧化物層。 電鍍i積:真空蒸鍍、分子束蒸鍍、濺鍍或離巧 子束瘵鍍、塗佈等來進行。亦可使用藉由在成 10 200917893 膜腔室内導入電漿來提高反應性或成膜性的電聚輔助真空 蒸鍍法等。真空蒸鍍法的蒸發源例如可列舉電阻加熱、電 子束加熱、高頻感應加熱、雷射束加熱等。更簡便的方法 較好的是電阻加熱、電子束加熱、高頻感應加熱。對於濺 鐘(藏鑛法、藏射法(Sputtering Method))而言,有直流 濺射儀法(Direct Current Sputter ’ DC Sputter)、射頻濺射 儀法(Radio Freqency Sputter,RF Sputter)、電子耦合諧振The layer obtained by the following steps in the organic EL device of the invention: The upper metal oxide layer is a layer which is provided by g, and is provided by: (A) depositing a metal oxide on other layers constituting the element; The step of sitting on the treated metal oxide layer; and the other layer constituting the component of the upper silk domain (4) metal ruthenium oxide correction sheet can be formed by the phase m layer 'Kona' and the obtained organic Ε] The anode structure (four) is chosen. For example, it may be disposed on the substrate to obtain a direct connection with the electrode. Alternatively, after the electrode is disposed on the substrate, the electrical phase may be stunned +&quot; Layer, charge injection /: The charge-bearing layer is formed, and further deposited thereon, and the metal oxide layer in contact with the layer. The electroplating i product is carried out by vacuum evaporation, molecular beam evaporation, sputtering, or ion beam plating, coating, or the like. It is also possible to use an electropolymer-assisted vacuum vapor deposition method in which a plasma is introduced into a film chamber of 200917893 to improve reactivity or film formation. Examples of the evaporation source of the vacuum deposition method include resistance heating, electron beam heating, high frequency induction heating, and laser beam heating. A simpler method is better resistance heating, electron beam heating, high frequency induction heating. For splashing clocks (Sputtering Method), there are DC current sputtering method (Direct Current Sputter 'DC Sputter), RF Sputtering method (Radio Freqency Sputter, RF Sputter), electronic coupling resonance

藏射儀法(Electron Coupling Resonance Sputter,ECRElectrophoresis Method (Electron Coupling Resonance Sputter, ECR)

Sputter)、傳統式濺鍍法(conventi〇nal sputtering)、磁控濺 射法(Magnetron Sputter )、離子束濺射法(I〇n Beam Suppter)、對向靶濺射法等,可使用任意方式。為了不損 傷下層,較好的是使用磁控濺射法、離子束濺射法、對向 靶濺射法。再者,成膜時,亦可於環境中導入氧氣或含有 氧元素的氣體來進行成膜。又,金屬氧化物不僅可使用一 ,氧化物,亦可併用多種氧化物或未經氧化的金屬。例如, 氧化鉬材料通常是使用M〇〇3,但亦可使用M〇金屬、 或該些物質的混合物等。 上述步驟(B)可在上述步驟⑷中獲得未經處理的 金屬f化物層之後、而在該層上形成其他層之前進行。具 體而吕’可藉由在上述步驟(A)結束之後將設有上述未 、、二處理的金屬氧化物層的基板保存於含氧環境下而進行。 其中,含氧環境只要是流通著含有氧的氣體的環境即 :,並無特別限定’可使用通常的域等。氧環境中的氧 濃度可為it常的域城度_裏,但並未限定於此, 11 200917893 較好的是設定於0.01%〜30%的範圍、更好的是設定 〜30%的範圍内。 0 進行上述步驟(B)的含氧環境中的濕度,較好 可設定為0.01%〜95%,更好的是設定為〇 1%〜9〇%,s 度較好的是可設定為1(rc〜6(rc,更好的是設定為2〇 50C。再者,較好的是,在整個曝露處理的期間中,將濕 度控制於設定在上述範圍内的規定值的±5%範圍内,將π 度控制於設定在上述範圍内的規定值的饥範圍内。,皿 崎里j上述步驟⑻的曝露處理的期間可根據所需的 j果及製造工期等而適當調整,較好的是可設定為!天〜 20天’更好的是設定為2天〜15天。 ,發財’獲付上述金屬氧化物層時,除進行上述步 他:ί驟iB)以外,可於各步驟之前或之後任意進行其 可任意於上述步驟⑻之前或之後進 臭氧(則3)處理、加熱處理等其他步驟,然 後進一步進行其他層的積層步驟。 強戶處理可藉由以lmWW〜1〇—的 外線5秒〜3G分鐘來進行吐述加熱處理可於 5〇C〜35〇C、!分鐘〜12〇分鐘的條件下進行。 說明其次,就本發明的有機&amp;元件的層構成加以更具體 本發明的有機EL元件必須呈右陡_μ ^ 極,此外,可於卜、十1心1有%極、發光層以及陰 述發光μ 極與上述發光層之間、以及/或者上 發先層與上述陰極之間更具有其他層。 12 200917893 可於陰極與發光層之間的 =2層:電洞阻擋層等。於設置有 的情況下’靠近陰極的層成為電子注入 層罪k發光層的層成為電子傳輸層。 電子注入層是具有對自陰極的電子注 之Ϊ能的層,電子傳輸層是具有對自陰極、電 傳輸層對發光層的電子傳輸進行改2 :同傳幹於/電子注人層、或f子傳輸層具有阻擋電 電洞阻撞層。衫人層冑子傳輸層有時兼作 、同雷且f電洞傳輸的功能時,例如’可製作僅流過電 ==件,並根據該電洞電流的電流值的減少量來確 設置於陽極與發光層之間的層例如可列舉入 層、電子阻擔層等。於設置有電洞注k層以 及電洞傳輸層兩者的情況下,#近陽極的層 入 層,靠近發光層的層成為電洞傳輸層。 w f 電洞注入層是具有對自陽極的電洞注入效率進行改盖 層丄所謂電洞傳輸層’是指具有對自陽極、電i 或更罪近陽極的電洞傳輸層對發光層的電洞傳輸進 有;傳:::能時’該些〜、二層 田具有阻擋電子傳輸的功能時,例如,可製作僅流過 13 200917893 電子電流的元件’並根據該電子電流的電流值的減少量來 確認阻擋效果。 本發明的有機EL元件中,發光層通常是設置一層, 但並未限定於此,亦可設置兩層或兩層以上的發光層。此 種情況下,兩層或兩層以上的發光層可直接相接觸而積 層’亦可在該兩層或兩層以上的層之間設置本發明所使用 的金屬氧化物層等。 再者,有時將電子注入層及電洞注入層統稱為電荷注 入層,且有時將電子傳輸層及電洞傳輸層統稱為電荷傳輸 層。 更具體而言,本發明的有機EL元件可具有下述屉播 成中的任一種: θ a) 陽極/電洞傳輸層/發光層/陰極 b) 陽極/發光層/電子傳輸層/陰極 Ο陽極/電洞傳輸層/發光層/電 d)陽極/騎 ϋ e)陽極/發光層/電荷注入層/陰極 Ο,極/電荷注入層/發光層/電荷注入層/陰極 5陽極/電荷〉主入層/電洞傳輸層/發光層/陰極 )陽極/電洞傳輸層/發光層/電荷注入層/陰極 陰極0陽極/電荷注入層/電洞傳輸層/發光層/電荷注入層/ 2 =/電荷注入層/發光層/電荷傳輸層/陰極 )〶極/發光層/電子傳輸層/電荷注入層/陰極 200917893 l) 陽極/電荷注入層/發光層/電子傳輸層/電荷注入層/ m) 陽極/電荷注入層/電洞傳輸層/發光層/電荷傳輸層 陰極 陽極/電洞傳輸層/發光層/電子傳輸層/電荷注入層/ 電荷發績子傳輸層/ (其中’/表示各層相鄰接而積層著。以下相同。) 科、*=層1冓成的各例中,上述金屬氧化物層是設置為電 子傳輸層中的或電子注人層)、電權層以及電 上的2層本發明的有機EL元件亦可具有兩層或兩層以 具有兩層發光相有機EL元件具财馨: 電極i電荷注入層/電洞傳輸層/發光層/電子^輸声/ 輪層輸層/發光層,電4 的層構成的有機EL元件。 輸=注八層作為一個重複單元(以;稱發為=傳 A」),可列舉:具有 里硬旱7〇 q)陽極/電荷注入層/電洞傳輸層/發光層/電子傳輪層/ 15 200917893 電荷注入層/重複單元A/重複單元Α.../陰極 含有兩層⑼層以切輕單元 EL·元件。 的層構成的有機 上述層構成P及層構成q中,陽極 外的各層可視需要而省略。 陰桎發光層以 其中’所謂電極,是指#由施加 子的層。構成該電極的材料例如可列舉 電概電 錫(Indium Tin Oxide)、氧化鉬等。 羊釩、氧化銦 上述層構成p及層構成的各 r設置為電荷注入層、電洞傳輪二 本發明的有機el元件可更具有美 上設置上述各層。本發明的有機EL ΐ件中, 述各層而與基板相反—側更二”可在夾持上 有基板及上述層構成的有機冓件。具 υ !;基:本發”一此念 而言,例如,目士甘』,e 置馬透明的層。具體 月况下可將基板、陽極、 傳輸層均設置為透明的層,而製成所電Π入層以及電洞 件,或者可將電子傳輸明的底部發光型元 得翰層電何注入層、陰極以及密封構 16 200917893 件均設置為透明的層,而 具有基板/陰極/電荷注入思成斤谓的頂部發光型元件。又, 層/電荷注入層/陽極/密封;二子 洞傳輸 況下,可將基板、陰極 冓成的有機EL元件的情 置為透明的層,而製成所謂:底;傳::均設 明的層,而製成所謂的件均設置為透 二可見= 本發明的有機;el元件中,為了推^ 密著性或改善自電極的電步b與電極的 置上,注入層或於設 為了提尚界面的密著性或防止混人 _ ' 或發光層的界面處插入薄的緩衝^ ’亦可在電荷傳輸層 3層的層的順序、數量、及各層的厚度 光效率或元件壽命而適當地使用。 可夂毛 形成的有機EL元件的各層的材料及 &lt;基板&gt; 構成本發明的有機EL元件的基板,只要在形成電極、 有機物層時不發生變化即可,例如可使用玻璃、塑膠、 而分子膜、石夕基板、將該些物質積層而成的基板等。上述 17Sputter), conventi〇 sputtering, magnetron sputtering, ion beam sputtering (I〇n Beam Suppter), counter target sputtering, etc., can be used in any manner. . In order not to damage the lower layer, it is preferred to use a magnetron sputtering method, an ion beam sputtering method, or a counter target sputtering method. Further, at the time of film formation, it is also possible to introduce oxygen by introducing oxygen or a gas containing oxygen into the environment. Further, as the metal oxide, not only one, but also an oxide may be used, and a plurality of oxides or unoxidized metals may be used in combination. For example, the molybdenum oxide material is usually M〇〇3, but M〇 metal, or a mixture of these, or the like can also be used. The above step (B) can be carried out after obtaining the untreated metal halide layer in the above step (4) and before forming other layers on the layer. The specific body can be carried out by storing the substrate provided with the above-mentioned untreated metal oxide layer in an oxygen-containing atmosphere after the completion of the above step (A). In addition, the oxygen-containing environment is not particularly limited as long as it is an environment in which a gas containing oxygen flows. The oxygen concentration in the oxygen environment may be the range of the area where it is often, but is not limited thereto, and 11 200917893 is preferably set in the range of 0.01% to 30%, more preferably in the range of 〜30%. Inside. 0 The humidity in the oxygen-containing environment in the above step (B) is preferably set to 0.01% to 95%, more preferably 〇1% to 9〇%, and the s degree is preferably set to 1 (rc~6 (rc, more preferably set to 2〇50C. Further, it is preferable to control the humidity within ±5% of the prescribed value set within the above range during the entire exposure process) In the inside, the π degree is controlled within the hunger range of the predetermined value set in the above range. The period of the exposure process of the above step (8) can be appropriately adjusted according to the required j fruit, the manufacturing period, and the like. It can be set to! Day ~ 20 days 'Better is set to 2 days ~ 15 days. When you get paid for the above metal oxide layer, in addition to the above steps: ί i iB) Before or after the step, any other steps such as ozone (then 3) treatment, heat treatment, etc. may be carried out before or after the above step (8), and then the lamination step of the other layers may be further performed. The strong household treatment may be performed by lmWW~1〇 - The external line is 5 seconds to 3G minutes to perform the heat treatment at 5〇C~35〇C,! The composition of the organic &amp; element of the present invention is more specifically described. The organic EL element of the present invention must be right steep _μ ^ pole, and in addition, 1 having a % pole, a light-emitting layer, and a light-emitting μ pole and the above-mentioned light-emitting layer, and/or between the upper layer and the cathode have further layers. 12 200917893 Can be between the cathode and the light-emitting layer = 2 Layer: hole barrier layer, etc. In the case where it is provided, the layer close to the cathode becomes the electron injection layer, and the layer of the light-emitting layer becomes the electron transport layer. The electron injection layer is a layer having an electron charge to the cathode. The electron transport layer has the function of changing the electron transport from the cathode and the electrotransport layer to the light-emitting layer: the same-passing electron/electron injection layer, or the f-sub-transport layer has a blocking electric hole blocking layer. When the sub-transport layer also functions as a function of the same lightning and f-hole transmission, for example, it is possible to manufacture only the electric current== component, and it is surely set to the anode and the light-emitting layer according to the reduction amount of the current value of the hole current. For example, the layers between them can be enumerated as layers. a resistive layer, etc. In the case where both the hole hole k layer and the hole transport layer are provided, the layer close to the anode and the layer close to the light emitting layer become the hole transport layer. The wf hole injection layer has Replacing the hole injection efficiency from the anode, the so-called hole transport layer means that there is a hole transmission to the light-emitting layer from the anode, the electric or the near-anode of the anode; When the function of blocking the electron transmission is performed, for example, an element that flows only the electronic current of 13 200917893 can be produced, and the blocking effect is confirmed based on the amount of decrease in the current value of the electronic current. In the organic EL device of the present invention, the light-emitting layer is usually provided in one layer, but is not limited thereto, and two or more light-emitting layers may be provided. In this case, two or more light-emitting layers may be directly contacted to form a layer. The metal oxide layer or the like used in the present invention may be provided between the two or more layers. Further, the electron injecting layer and the hole injecting layer are collectively referred to as a charge injecting layer, and the electron transporting layer and the hole transporting layer are sometimes collectively referred to as a charge transporting layer. More specifically, the organic EL element of the present invention may have any one of the following drawers: θ a) anode/hole transport layer/light-emitting layer/cathode b) anode/light-emitting layer/electron transport layer/cathode Ο Anode/hole transport layer/light-emitting layer/electricity d) anode/riding ϋ e) anode/light-emitting layer/charge injection layer/cathode Ο, pole/charge injection layer/light-emitting layer/charge injection layer/cathode 5 anode/charge> Main layer/hole transport layer/light-emitting layer/cathode) anode/hole transport layer/light-emitting layer/charge injection layer/cathode cathode 0 anode/charge injection layer/hole transport layer/light-emitting layer/charge injection layer/2 = / charge injection layer / light-emitting layer / charge transport layer / cathode) drain / light-emitting layer / electron transport layer / charge injection layer / cathode 200917893 l) anode / charge injection layer / light-emitting layer / electron transport layer / charge injection layer / m) anode/charge injection layer/hole transport layer/light-emitting layer/charge transport layer cathode anode/hole transport layer/light-emitting layer/electron transport layer/charge injection layer/charge generation sub-transport layer/(where '/ Each layer is adjacent to each other and laminated. The same applies hereinafter.) In the respective examples of the group, *=layer 1 The organic EL element of the present invention may be provided in two layers or two layers to have two layers of luminescent phase organic EL elements. : Electrode i charge injection layer / hole transport layer / light-emitting layer / electron sound transmission / wheel layer transport layer / light-emitting layer, layer 4 of organic EL elements. Input = Note 8 layers as a repeating unit (to be called as = pass A)), which can be cited as: having a hard dry 7 〇 q) anode / charge injection layer / hole transport layer / luminescent layer / electron transfer layer / 15 200917893 Charge injection layer / repeating unit A / repeating unit Α ... / cathode contains two layers (9) layer to cut light unit EL · element. The organic layer structure is composed of the above-mentioned layer P and the layer structure q, and the layers other than the anode are omitted as needed. The haze emitting layer is referred to as a "so-called electrode" and refers to a layer of the applicator. Examples of the material constituting the electrode include, for example, Indium Tin Oxide, Molybdenum Oxide, and the like. Sheep vanadium and indium oxide Each of the above-mentioned layer constitution p and layer is provided as a charge injection layer and a hole transfer wheel. The organic EL element of the present invention can further have the above-mentioned layers. In the organic EL element of the present invention, each layer is opposite to the substrate - the side is two", and the substrate and the organic element composed of the layer are sandwiched on the substrate. For example, 目士甘』, e set a transparent layer. In the specific month, the substrate, the anode and the transmission layer can be arranged as a transparent layer, and the electric intrusion layer and the hole member can be made, or the bottom emission type of the electron can be transmitted to the bottom layer. The cathode and the sealing structure 16 200917893 are each provided as a transparent layer, and have a substrate/cathode/charge injection into the top-emitting type element. Further, the layer/charge injection layer/anode/sealing; in the case of the transmission of the two sub-holes, the organic EL element formed by the substrate and the cathode can be placed in a transparent layer to form a so-called: bottom; The layers are made into so-called pieces that are both permeable to visible = organic in the present invention; in the el element, in order to push the adhesion or improve the electrical step b of the self electrode and the placement of the electrodes, the injection layer or the device In order to improve the adhesion of the interface or prevent the mixing of the _ ' or the thin buffer at the interface of the luminescent layer ^ ', the order of the layers in the layer of the charge transport layer, the number, and the thickness of each layer or the lifetime of the device Use it properly. The material of each layer of the organic EL element which can be formed by the bristles, and the substrate of the organic EL element of the present invention are not changed as long as the electrode or the organic layer is formed. For example, glass or plastic can be used. A molecular film, a stone substrate, a substrate obtained by laminating these materials, and the like. Above 17

200917893 基板可獲取市㈣基板,或可_公知財 &lt;陽極&gt; 對於本發明的有機EL元件的陽極,使用透明或半透 明的電極可構成透過陽極而發光的元件,故較好。該透明 電極或半賴f極可使_____ $ 的金屬氧化物、金屬硫化物或金屬的薄膜,騎較好地利 用透射率高的物質’是根據所使㈣有機層㈣當地選擇 ^使用。具體而言’例如可列舉:使用由氧化錮、氧化辞、 氧化錫、及該些氧化物的複合物即氧化銦錫㈤―他 ’ ITO)、氧化銦鋅(Indium Zinc 〇xide)等所構成的 導電性玻璃而製成的膜⑽SA#),或金、鈾、银、銅 是、1T。、氧化銦辞、氧化錫。製作方法例如可列舉 /二瘵鍍法、濺鑛法、離子電鍍法、電鍍法等。又,該 f亦可使用料胺(⑽卿齡.)或其衍生物、聚嗜吩 (polythiophene)或其衍生物等的有機透明導電膜。 θ對於陽極’亦可利用使光反射的材料,該材料較好的 疋功函數(work function)大於等於3.〇 eV的金屬、 氧化物、金屬硫化物。 、屬 陽極的膜厚可考慮光的透射性及電導率而適當選擇, 例如為10nm〜10 ,較好的是以瓜, 的是 50 nm〜500 nm。 &lt;電洞注入層&gt; 電洞注入層可設置在陽極與電洞傳輸層之間、或者陽 極與發光層之間。本發明的尤佳的態樣中,電洞注入層可 18 200917893 使用上述金屬氧化物層。 本發明的有機EL元件中,於具有上述金屬氧化物層 作為電洞注入層以外的層的情況下,形成電洞注入層的材 料例如可列舉:苯基胺(phenyiamine )系,星射型(starburst) 胺系’酞菁(phthalocyanine)系,氧化鈒、氧化鈕、氧化 鎢、氧化鉬、氧化釕、氧化鋁等氧化物,非晶形碳(am〇rph〇us carbon),聚苯胺,聚噻吩衍生物等。 &lt;電洞傳輸層&gt; 電洞傳輸層有時亦可使用上述金屬氧化物層,於除此 以外的情況下,構成電洞傳輸層的材料可例示:聚乙烯咔 唾(polyvinylcarbazole )或其衍生物、聚石夕院或其衍生物、 支鏈或主鏈上具有芳香族胺的聚矽氧烷衍生物、吡唑啉衍 生物(pyrazoline derivatives)、芳基胺衍生物、芪衍生物 (stilbene derivatives )、三苯基二胺衍生物、聚苯胺或其衍 生物、聚噻吩或其衍生物、聚芳基胺或其衍生物、聚吡咯 (polypyrrole )或其衍生物、聚(對苯乙炔) Cpoly(paraphenylenevinylene))或其衍生物、或聚塞吩乙 烯(Poly(2,5-thienylenevinylene))或其衍生物等。 該些材料之中,電洞傳輸層所使用的電洞傳輸材料較 好的是聚乙烯咔唑或其衍生物、聚矽烷或其衍生物、支鏈 或主鏈上具有芳香族胺化合物基的聚矽氧烷衍生物、聚苯 胺或其衍生物、聚噻吩或其衍生物、聚芳基胺或其衍生物、 聚(對苯乙炔)或其衍生物、或聚塞吩乙烯或其衍生物等高 分子電洞傳輸材料,更好的是聚乙烯咔唑或其衍生物、聚 200917893 石夕烧或其衍生物、支鏈駐鏈上具衫香_的聚魏 何生物。為低分子電洞傳輸材料的情況下, 低分子電轉輪材料分餘高分子黏合财而使=疋使該 、電洞傳輸層的成膜方法並無限制,低分子電润傳輸材 料可例示:該低分子電洞傳輸材料與高分子黏合劑的 混合溶液來進行賴的方法。又,高分子電洞傳輪二料可 例不:利用溶液來進行成膜的方法。200917893 The substrate (4) substrate can be obtained, or the anode of the organic EL device of the present invention can be formed by using a transparent or semi-transparent electrode to form an element that emits light through the anode. The transparent electrode or the semi-finished electrode can make the film of metal oxide, metal sulfide or metal of _____ $, which is better to use the material with high transmittance, is used according to the local (4) organic layer (4). Specifically, for example, it is composed of cerium oxide, oxidized cerium, tin oxide, and a composite of these oxides, namely, indium tin oxide (V)-ITO (ITO) and indium zinc oxide (Indium Zinc 〇xide). Film (10) SA#) made of conductive glass, or gold, uranium, silver, copper, 1T. , indium oxide, tin oxide. The production method may, for example, be a /2 瘵 plating method, a sputtering method, an ion plating method, a plating method, or the like. Further, as the f, an organic transparent conductive film such as an amine ((10) qingling.) or a derivative thereof, a polythiophene or a derivative thereof may be used. θ for the anode ' can also utilize a material that reflects light, and the material preferably has a work function of 3. 〇 eV of metal, oxide, or metal sulfide. The film thickness of the anode may be appropriately selected in consideration of light transmittance and electrical conductivity, and is, for example, 10 nm to 10, preferably melon, and 50 nm to 500 nm. &lt;Curtain injection layer&gt; The hole injection layer may be provided between the anode and the hole transport layer or between the anode and the light-emitting layer. In a particularly preferred aspect of the invention, the hole injection layer can be used in the above-mentioned metal oxide layer. In the case of the organic EL device of the present invention, in the case where the metal oxide layer is a layer other than the hole injection layer, a material for forming the hole injection layer may, for example, be a phenamine compound or a star-emitting type. Starburst) amine-phthalocyanine, oxides such as cerium oxide, oxidized knob, tungsten oxide, molybdenum oxide, cerium oxide, aluminum oxide, amorphous carbon (am〇rph〇us carbon), polyaniline, polythiophene Derivatives, etc. &lt;Core Transport Layer&gt; The above-mentioned metal oxide layer may be used in the hole transport layer. In other cases, the material constituting the hole transport layer may be exemplified by polyvinylcarbazole or a derivative, a polylithic or its derivative, a polyoxyalkylene derivative having an aromatic amine on a branched or main chain, a pyrazoline derivative, an arylamine derivative, an anthracene derivative ( Stilbene derivatives), triphenyldiamine derivatives, polyaniline or derivatives thereof, polythiophene or derivatives thereof, polyarylamines or derivatives thereof, polypyrrole or derivatives thereof, poly(p-phenylacetylene) Cpoly(paraphenylenevinylene)) or a derivative thereof, or poly(2,5-thienylenevinylene) or a derivative thereof. Among these materials, the hole transporting material used in the hole transport layer is preferably polyvinyl carbazole or a derivative thereof, polydecane or a derivative thereof, or an aromatic amine compound group in a branched or main chain. a polyoxyalkylene derivative, polyaniline or a derivative thereof, polythiophene or a derivative thereof, a polyarylamine or a derivative thereof, poly(p-phenylacetylene) or a derivative thereof, or polyexepene ethylene or a derivative thereof Other polymer hole transport materials, more preferably polyvinyl carbazole or its derivatives, poly 200917893 Shi Xizhuan or its derivatives, the branch chain of the chain has a fragrant incense _ wei Weihe organism. In the case of a low-molecular-weight hole transporting material, the low-molecular-weight electric wheel material has a residual polymer adhesion, so that the film-forming method of the hole-transporting layer is not limited, and the low molecular-electrolytic transport material can be exemplified. : A method in which a mixed solution of a low molecular hole transport material and a polymer binder is used. Further, the polymer hole transporting wheel is not limited to a method of forming a film by using a solution.

利用溶液進行成膜時所使用的溶劑,只要使電洞傳輸 材料溶解即可,並無特別限制。該溶劑可例示:氯仿 (chloroform )、二氯曱烷(methylene chloride )、二氣乙烧 /dichloroethane)等氯系溶劑,四氫呋喃(tetrahydr〇furaj^ 等醚系溶劑,甲苯、二甲苯等芳香族烴系溶劑,丙酮、甲 基乙基酮等酮系溶劑,乙酸乙酯、乙酸丁酯、乙基溶纖劑 乙酸酯等酯系溶劑。 利用溶液進行成膜的方法例如可使用:利用溶液進行 的方疋轉塗佈法(spin coating)、洗鑄法(casting)、微壓花 輕筒式塗佈法(microgravure coating )、凹版印刷塗佈法 (gravure coating )、棒塗佈法(bar coating )、輥塗佈法(r〇U coating)、線棒塗佈法(wire-bar coating )、浸潰塗佈法(dip coating )、狹縫塗佈法(siit coating )、毛細管塗佈法 (capillary coating )、喷霧塗佈法(Spray coating )、喷嘴塗 佈法(nozzle coating)等塗佈法,凹版印刷法(gravure printing )、絲網印刷法(screen printing )、柔版印刷法 (flexographic printing )、套版印刷法(offset printing )、反 20 200917893 轉印刷法(reversal priming )、喷墨印刷法(ink_jet printing ) 等印刷法等的塗佈法。就容易形成圖案的觀點而言,較好 的是凹版印刷法、絲網印刷法、柔版印刷法、套版印刷法、 反轉印刷法、喷墨印刷法等印刷法。The solvent used for film formation by the solution is not particularly limited as long as it dissolves the hole transporting material. Examples of the solvent include chlorine solvents such as chloroform, methylene chloride, and dichloroethane, and ether solvents such as tetrahydrofuran (tetrahydr〇furaj^, aromatic hydrocarbons such as toluene and xylene). A solvent, a ketone solvent such as acetone or methyl ethyl ketone, or an ester solvent such as ethyl acetate, butyl acetate or ethyl cellosolve acetate. The method of forming a film from a solution can be used, for example, by using a solution. Spin coating, casting, microgravure coating, gravure coating, bar coating ), roll coating (r〇U coating), wire-bar coating, dip coating, siit coating, capillary coating ( Coating methods such as capillary coating, spray coating, nozzle coating, gravure printing, screen printing, flexographic printing Printing ) Coating method such as offset printing, reverse printing, reprinting (reversal priming), inkjet printing (ink_jet printing), etc. In terms of easy formation of a pattern, gravure printing is preferred. Printing methods such as printing, screen printing, flexographic printing, plate printing, reverse printing, and inkjet printing.

所混合的高分子黏合劑較好的是不會極大地阻礙電荷 傳輸,可較好地使用對可見光的吸收不強的高分子黏合 劑。作為該高分子黏合劑,可例示:聚碳酸酯 (polycarbonate)、聚丙烯酸醋(p〇iyacryiate)、聚丙烯酸 甲酯(polymethyl acrylate )、聚甲基丙烯酸甲酯( metacrylate )、聚苯乙烯(p〇lystyrene )、聚氯乙婦 (polyvinylchloride )、聚矽氧院等。 -電/轉輸層的膜厚的最適值根據所使用的材料而不 同’只要加以選胸魅動糕及發光效率成為適當的值 即可’但至少必須為不產生針孔(pinhc&gt;le)的厚度,若電 洞傳輸層過厚,則元件的驅動電塵變高而 電洞傳輸層⑽厚例如為1咖〜1卿較好的是2nm〜 500nm’更好的是5nm〜20〇nm。 &lt;發光層&gt; 本發明中 .灸尤層較好的是有機發光層,通常主要且 再光ϋ光时機物(低分子化合物及高分子化: 亦可更対雜㈣。本制中可使 的材料例如可列舉以下發光性材 色素系材料 色素系材料例如可列舉··環五胺(eye—) 21 200917893 或其衍生物、四苯基丁二烯或其衍生物、三苯基胺或其衍 生物、°惡二吐(oxadiazole )或其衍生物、η比嗤幷喧琳 (pyrazoloquinoline )或其衍生物、二苯乙烯基苯 (distyrylbenzen )或其衍生物、二苯乙烯基芳烴 (distyrylarylene)或其衍生物、吡咯(pyrr〇ie)或其衍生 物、嗟吩環化合物、η比β定環化合物、b底瑞嗣(perjn〇ne) 或其衍生物、茈(perylene )或其衍生物、募聚噻吩 (oligothiophene)或其衍生物、噁二唑二聚物、吡唑啉二 《 聚物、啥吖咬酮(quinacridone )或其衍生物、香豆素 (coumarin)或其衍生物、紅螢稀(rubrene)或其衍生物、 角鯊烯鑌(squalilium)或其衍生物、卟啉(p0rphyrin)或 其付生物、本乙稀系色素、稍四苯(tetracene)或其衍生 物、二氫吡唑酮(pyrazolone)或其衍生物、十環烯 (decacyclene)、啡噁嗪酮(phenoxazone)等。 金屬錯合物系材料 金屬錯合物系材料例如可列舉:銥錯合物及鉑錯合物 等具有由二重態激發狀恶的發光的金屬錯合物、經基喧琳 鋁錯合物(alumi-quinolinol compiex)、苯基羥基喹啉鈹錯 合物(beryllium-benzoquinolinol complex)、苯幷 °惡哇鋅錯 合物、苯幷噻唑鋅錯合物、偶氮甲基鋅錯合物、卟啉鋅錯 合物、銪錯合物等,此外可列舉:中心金屬具有A1、Zn: Be荨或Tb、_Eu、Dy等稀土金屬,配位基具有嗓二唾、售 二唑(thiadiazole)、苯基吡啶、苯基苯幷咪唑、喹啉結構 等的金屬錯合物等。 'σ 22 200917893 高分子系材料 系材料例如可列舉:聚對苯乙块或其衍生物、 为3、何生物、聚對笨(polyparaphenylene)或其衍 ,、聚石夕燒或其衍生物、聚乙快或其衍生物、聚苐 (poy _)或其衍生物、聚乙烯料或其衍生物、將 上述色素諸料或金屬錯合物㈣料高分子化而成的 子系材料等。 X上述發紐材射,發出藍色光的材料可列舉:二苯 乙婦基芳:k或其衍生物、。惡二4或其衍生物以及該些化合 物的聚合物、聚乙料錢其触物、聚對苯或其衍生物、 聚第或其魅轉。其巾,較好的是高分子材料的聚乙烯 2坐或其衍生物、聚對苯或其衍生物或者聚第或其衍生物 專。 一又’發出綠色光的材料可列舉:喹吖啶酮或其衍生物、 香豆素或其衍生物以及該些化合物的聚合物、聚對苯乙炔 或其衍生物、聚第或其衍生物等。其中,較好的是高分子 材料聚對苯乙炔或其衍生物、聚苐或其衍生物等。 又,發出紅色光的材料可列舉:香豆素或其衍生物、 塞吩環化合物以及該些化合物的聚合物、聚對苯乙炔或其 衍生物、聚噻吩或其衍生物、聚苐或其衍生物等。其中, 較好的是高分子材料聚對苯乙炔或其衍生物、聚噻吩或其 衍生物、聚苐或其衍生物等。 、 摻雜材料 為了提高發光效率或使發光波長變化等,可於發光層 23 200917893 香上素料:種摻雜材料例如可列舉:茈衍生物、 鏽衍生物、懒生物 J::闕:生物/角主烯 光層的厚度通常侧等。再者,此種發 &lt;發光層的成膜方法&gt; ,含有機物的發光相成财法可使用:將 材科的溶液塗佈於基體上或基 二溶液進行成膜所使用的溶劑的= 輸材;的溶劑相同的液形成電洞傳輸層時溶解電洞傳 方法溶液塗佈於基體上或基體的上方的 =例如可使用:旋轉塗佈法、躺法、微壓花輥筒式塗The polymer binder to be mixed preferably does not greatly inhibit charge transport, and a polymer binder which does not strongly absorb visible light can be preferably used. Examples of the polymer binder include polycarbonate, polyacrylic acid acrylate, polymethyl acrylate, polymethyl methacrylate (methacrylate), and polystyrene (p). 〇lystyrene ), polyvinyl chloride, polyoxane, etc. - The optimum value of the film thickness of the electric/transfer layer varies depending on the materials used. 'As long as the chest-effect cake and the luminous efficiency are appropriate values, 'but at least pinholes must not be produced (pinhc&gt;le) If the thickness of the hole transmission layer is too thick, the driving dust of the element becomes high and the thickness of the hole transport layer (10) is, for example, 1 coffee to 1 qing, preferably 2 nm to 500 nm', more preferably 5 nm to 20 〇 nm. . &lt;Light-emitting layer&gt; In the present invention, the organic light-emitting layer is preferably a main layer of moxibustion, and is usually mainly used for re-lighting time (low molecular compound and macromolecular compound: it may be more complicated (4). Examples of the material that can be used include the following luminescent material dye-based material dye-based materials, for example, cyclopentylamine (eye-) 21 200917893 or a derivative thereof, tetraphenylbutadiene or a derivative thereof, triphenyl group Amine or a derivative thereof, oxadiazole or a derivative thereof, pyrazoloquinoline or a derivative thereof, distyrylbenzen or a derivative thereof, distyryl arene (distyrylarylene) or a derivative thereof, pyrrole (pyrr〇ie) or a derivative thereof, a porphin ring compound, a η ratio β-ring compound, b-peri-ruthene or a derivative thereof, perylene or a derivative thereof, oligothiophene or a derivative thereof, an oxadiazole dimer, a pyrazoline dimer, a quinacridone or a derivative thereof, coumarin or Derivative, rubrene or its derivative, squalene oxime (sq) Ualilium) or a derivative thereof, porphyrin (P0rphyrin) or its organism, the present ethylene dye, tetracene or a derivative thereof, pyrazolone or a derivative thereof, decacyclomethene (decacyclene), phenoxazone, etc. Metal complex compound material The metal complex compound material may, for example, be a metal having a luminescence excited by a doublet state, such as a ruthenium complex or a platinum complex. Complex, alumi-quinolinol compiex, beryllium-benzoquinolinol complex, benzoquinone-zinc-zinc complex, benzothiazole zinc complex a compound, an azomethyl zinc complex, a zinc porphyrin complex, a ruthenium complex, etc., and a central metal having a rare earth metal such as A1, Zn: Be荨 or Tb, _Eu, Dy, etc. The base has a metal complex such as hydrazine, thiadiazole, phenylpyridine, phenylbenzimidazole, or quinoline structure. 'σ 22 200917893 The polymer material is, for example, a poly pair. Phenylene block or its derivative, 3, Hebi, polyparaphen Ethylene or its derivative, polyglybdenum or its derivatives, polyethylidene or its derivatives, poly (poy) or its derivatives, polyethylene or its derivatives, the above pigments or metals The complex compound (4) is a sub-material obtained by polymerizing a material. The material of the above-mentioned hair-emitting material, which emits blue light, may be exemplified by diphenyl ethoxylate: k or a derivative thereof. Ethylene 2 or a derivative thereof and a polymer of the compound, a polyethylene material, a touch thereof, a polyparaphenylene or a derivative thereof, a polydip or a mellow thereof. The towel is preferably a polyethylene 2 seat of a polymer material or a derivative thereof, a polyparaphenylene or a derivative thereof or a poly or a derivative thereof. The material which emits green light may be exemplified by quinacridone or a derivative thereof, coumarin or a derivative thereof, and a polymer of the compound, polyparaphenylene acetylene or a derivative thereof, polydipeptide or a derivative thereof. Wait. Among them, preferred are polymer materials poly-p-phenylacetylene or a derivative thereof, polyfluorene or a derivative thereof. Further, examples of the material that emits red light include coumarin or a derivative thereof, a compound of the phenophene ring and a polymer of the compound, polyparaphenylene acetylene or a derivative thereof, polythiophene or a derivative thereof, polyfluorene or Derivatives, etc. Among them, a polymer material polyparaphenylene acetylene or a derivative thereof, polythiophene or a derivative thereof, polyfluorene or a derivative thereof, and the like are preferable. In order to improve the luminous efficiency or change the emission wavelength, the doping material may be used in the light-emitting layer 23 200917893. The doping material may be, for example, an anthracene derivative, a rust derivative, or a lazy organism J::阙: The thickness of the /cornerene light layer is usually equal to the side. Further, such a method of forming a film of a light-emitting layer, a method of forming a light-emitting phase containing an organic substance, can be used by applying a solution of a material to a substrate or a solvent used for film formation. = transport material; the same solvent as the liquid forms the hole transport layer when the dissolution hole transfer method solution is applied to the substrate or above the substrate = for example: spin coating, lying, micro embossing roller Paint

C ^法=版印刷塗佈法、棒塗佈法、輥塗佈法、線棒塗佈 =、⑽塗佈法々、狹縫塗佈法、毛細管塗佈法、嘴霧塗佈 ’、喷嘴塗佈法等塗佈法,凹版印刷法、絲網印刷法 =:、套版印刷法、反轉印刷法、噴墨印刷法等印刷 法等塗佈法。就容易形成圖案或容易區分多種顏色的觀點 而言’較好的是凹版印概、、_印刷法、柔版印刷法、 套版印刷法、反轉印刷法、噴墨印刷法等印刷法。 材料為昇華性低分子化合物的情況下,可使用真空^艘 法。再者’亦可使用如下方法:藉由利用雷射的轉印或熱 轉印而僅於所需處形成發光層。 μ 24 200917893 &lt;電子傳輸層&gt; 電子傳輸層有時亦可使用上述金屬氧化物層,於除此 以外的情況下,構成電子傳輸層的材料可使用公知的材 料,可例示:噁二峻衍生物、蒽醌二曱烷 (anthraquinodimethane )或其衍生物、苯職(benz〇quin〇ne ) 或其衍生物、萘醌(naphthoquinone)或其衍生物、蒽酿 (anthraquinone )或其衍生物、四氰基蒽醌二曱烷 (tetracyano anthraquinodimethane)或其衍生物、第酮衍生 物(fluorenone derivatives )、二笨基二礼乙烯 (diphenyldicyano ethylene)或其衍生物、聯苯醌衍生物、 或8-經基喹啉或其衍生物的金屬錯合物、聚啥琳或其衍生 物、t啥σ惡淋(polyquinoxaline)或其衍生物、聚第或其 衍生物等。 tj 該些材料之中,較好的是噁二唑衍生物、苯醌或其衍 生物、蒽醌或其衍生物、或8_羥基喹啉或其衍生物的金屬 錯合物、?Μ錢其魅物、料娜或其衍生物、聚葬 或其衍生物,更好的是2_(4_聯苯基)_5_(4_第三丁基苯 電子傳輸層喊麟並無__,低奸電子傳輸 :使賴末喊轉鍍法、或者制溶液或在 炫融=下進行成_方法,高分子電子傳輸材料可例 :在2:=熔!狀態下進行成膜的方法。使用溶液 ϋΐί 域時’亦可侧高分子黏合劑。使 冷之來城電子傳輸層的方法,可列舉與上賴使用溶 25 200917893 液來形成電洞傳輸層的方法相同的成膜法。 電子傳輸層的膜厚的最適值根據所使用的材料而不 同’只要純贿鶴電壓及發級率成為適當的值 即可,但至少必齡不產生針孔的厚度,若電子傳輸層過 厚,則元件的驅動電壓會變高而欠佳。因此,該電子傳輸 層的膜厚例如為Inm〜1 ,較好的是2nm〜5〇〇nm, 更好的是5 nm〜200 nm。 &lt;電子注入層&gt;C ^ method = plate coating method, bar coating method, roll coating method, wire bar coating =, (10) coating method, slit coating method, capillary coating method, nozzle spray coating ', nozzle A coating method such as a coating method such as a coating method, a gravure printing method, a screen printing method, a printing method such as a lithography method, a reverse printing method, or an inkjet printing method. From the viewpoint of easily forming a pattern or easily distinguishing a plurality of colors, a printing method such as a gravure printing method, a printing method, a flexographic printing method, a stencil printing method, a reverse printing method, or an inkjet printing method is preferable. In the case where the material is a sublimable low molecular compound, a vacuum method can be used. Further, it is also possible to use a method of forming a light-emitting layer only at a desired position by transfer or thermal transfer using a laser. μ 24 200917893 &lt;Electron transport layer&gt; The above-mentioned metal oxide layer may be used as the electron transport layer. In other cases, a material which constitutes the electron transport layer may be a known material, and it is exemplified by: a derivative, anthraquinodimethane or a derivative thereof, benz〇quin〇ne or a derivative thereof, naphthoquinone or a derivative thereof, anthraquinone or a derivative thereof, Tetracyano anthraquinodimethane or a derivative thereof, fluorenone derivatives, diphenyldicyano ethylene or a derivative thereof, a biphenyl hydrazine derivative, or 8- A metal complex of quinolinol or a derivative thereof, polyfluorene or a derivative thereof, polyquinoxaline or a derivative thereof, polydipeptide or a derivative thereof, and the like. Among these materials, preferred are oxadiazole derivatives, benzoquinone or derivatives thereof, hydrazine or a derivative thereof, or a metal complex of 8-hydroxyquinoline or a derivative thereof. It is better to use 2_(4_biphenyl)_5_(4_t-butylbenzene electron transport layer shouting __ , rash electronic transmission: so that Lai shouted to the plating method, or to make a solution or in the process of smashing = _ method, polymer electron transport material can be exemplified: in the 2: = melt! When using the solution ϋΐί domain, the polymer adhesive layer can also be used. The method of forming the cold electron transport layer can be exemplified by the same film forming method as the method of forming the hole transport layer by using the solution 25 200917893 liquid. The optimum value of the film thickness of the transport layer varies depending on the materials used. 'As long as the voltage and the rate of the bribes are appropriate values, the thickness of the pinholes is not generated at least for a certain period of time. If the electron transport layer is too thick, Therefore, the driving voltage of the element may become high and is not preferable. Therefore, the film thickness of the electron transporting layer is, for example, Inm 〜1, preferably 2 nm to 5 〇〇 nm, more preferably 5 nm to 200 nm. Electron injection layer &gt;

電子注入層設置於電子傳輸層與陰極之間、或者發另 】與陰極之間。電子注人層有時亦可使用上述金屬氧化啦 ^ ’於除此以外的情況下,根據發光層的種類,電子注/ 曰可列舉:驗金屬或驗土金屬,或者含有—種或一種以』 合金I者上述金屬的氧化物、齒化物及够 ^板2上述物質的混合物等。驗金屬及其氧化物、 物的示例可列舉:鋰、鈉、鉀、铷、鉋、 化麵氧化納、氟化納、氧化鉀、氟化卸、氧 屬及盆mi化铯、氟化鎚、碳酸料。又,驗土金 鋇二&quot;、*化物及碳酸化物的示例可列舉m 化鋇;=氟=鐫侧训、氧化鎖、氣 子注入層‘厚二是:ΐ;=:而形成的。電 26 200917893 &lt;陰極材料&gt; 的是二ΐ件中所使用的陰極的材料,較好 率高的材料、==注入電子的材料、且心ΐ 金屬次驗土金屬、過渡金 ^便用驗 鋰、鈉、鉀、铷、鉋、鈹、鎂、征:金屬例如可使用: 鋅、記、錮、鈽r # 、 过、鋇、鋁、銃、釩、 中―接^鈽 令铽、镱等金屬,或者上述金屬 種以上盥全、# ..次者上述金屬及合金中的一 種之鈦、始、錄、鶴、鍚中的 -“叮減°金’或者石墨或石墨層間化合物等。人金的 不例可列舉:鎂-銀合金、 ^ 口金的 金、鋰-钮人Α Λ» 、糊口1、鎂-鋁合金、銦-銀合 ,,口金、鋰-鎂合金、鋰_銦合金、 使用透明導電性電極,例如可使用導電二 用in:物等。具體而言,導電性金屬氧化物可使 化銦錫nTm f:氧化錫、及耗氧化物的複合物即氧 ⑽),導電性有機物可使用 膜介二你、I了 、聚嘆吩或其衍生物等有機透明導電 2。亦可使陰極為兩層或兩層以上的積層結構。再者,電 子注入層有時亦用作陰極。 可考慮到電導率及耐久性而適當地選擇陰極的膜厚, =為1〇mn〜10㈣’較好的是2〇膽〜…更好 的是 50 nm〜500 nm。 思陰極的製作方法可使職空聽法、濺鍍法、以及將 金屬薄膜加以壓接的層壓(laminate)法等。 27 200917893 &lt;絕緣層&gt; 本發明的有機el元件可任意地具有的、膜厚小於等 於2 nm的絕緣層,具有使電荷注入變得容易的功能。上 述絕緣,的㈣可列舉金屬氟化物、金屬氧化物、有機絕 緣材料等。設置有膜厚小於等於2 nm的絕緣層的有機EL 兀件可列舉:與陰極相鄰接而設置有膜厚小於等於2 nm 的,緣層的有機EL元件、與陽極相鄰接而設置有膜厚小 於等於2 nm的絕緣層的有機EL元件。 【 本發明的有機EL元件可用作面狀光源以及區段顯示 裝置(segment display)、點狀矩陣顯示裝置(d〇t matrix display )、液晶顯示裝置的背光源。 為了使用本發明的有機EL元件獲得面狀的發光,只 要將面狀的陽極與陰極配置成相重合即可。又,為了獲得 圖案狀的發光’有如下方法:在上述面狀的發光元件的表 面設置設有圖案狀窗口的遮罩的方法、使非發光部的有機 物層形成地極厚而實質上不發光的方法、使陽極或陰極中 〇 的任一方或兩方的電極形成為圖案狀的方法。利用該些任 一方法來形成圖案並以可獨立地接通/斷開(0N/0FF)的 方式來配置若干個電極,藉此可獲得能夠顯示數字、文字 或簡單記號等的區段型顯示元件。再者,為了製成點 陣元件,只要使陽極與陰極均形成為條狀並以正交的I式 來加以配置即可。藉由分別塗佈發光色不同的多種發光二 料的方法、或者使用彩色濾光片(colorfllter)或螢光轉換 滤光片的方法’可實現部分彩顯、多彩顯示。點狀矩陣元 28 200917893 件可採用被動式驅動,亦可與薄膜電晶體(Thin_Film Transistor ’ TFT)等合而採肖絲式驅動。該些顯示元 件可用作,腦、電視機、手機終端(mobile terminal)、行 動電話、汽車導航(car navigation )、攝像機(video camera) 的取景器(viewfinder)等的顯示裝置。 再者,上述面狀的發光元件為自發光薄型,可較好地 用作液晶顯示裝置的背光源用的面狀光源、或者面狀的照 明用光源。又,若使用可撓性基板,則亦可用作曲面狀的 光源或顯示裝置。 實施例 以下’參照實施例及比較例就本發明加以詳細說明, 但本發明並不限定於該些實施例及比較例。 &lt;實施例1&gt; (1 —1 :電子阻擋層材料的製備) 於附有攪拌翼、擋板、長度可調整的氮氣導入管、冷 /旋管、溫度計的可分離式燒瓶中,加入2,7-雙(1,3,2-二氧 雜硼烷冬基)-9,9-二辛基苐158.29重量份、雙_(4_漠苯 基)-4-(1-曱基丙基)-苯胺136.11重量份、氯化三辛基曱基 銨(HENKEL公司製造Aliquat 336) 27重量份以及曱苯 1800重量份,一方面自氮氣導入管流入氮氣,一方面於擾 拌下升溫至90°C。添加乙酸把(Π )0.066重量份以及三(鄰 甲苯醯基)膦0.45重量份之後,用1小時滴加17.5%碳酸納 水溶液573重量份。滴加結束後’將氮氣導入管自液面提 起’於回流下保溫7小時,然後添加苯基硼酸3.6重量份, 29 200917893 於回流下保溫14小時,繼而料卩至室溫。除去反應液水層 之後丄以甲苯將反應液油層稀釋,繼*以3%乙酸水溶液、 離子父換水進行清洗。於分液油層中添加N, N-二乙基二硫 代胺基甲咖三水合物13重量份並解4小時之後,使液 體?活性氧她與二氧化魏膠的混合管柱中通過,繼而 於&amp;柱中通過甲苯㈣清洗官挺。將滤液及洗液混合的後 滴加至曱醇巾,使聚合物錄。财分離所獲得的聚合物 沈殿:以甲醇清洗倾之後’ _真空乾雜對聚合物進 行乾燥,獲得聚合物192重量份。將所獲得的聚合物稱為 高分子化合物1。利用下述凝膠滲透層析(GelPermeati〇n Chromatography,GPC)分析法,來求出高分子化合物1 的聚本乙烯換算重量平均分子量及數量平均分子量,結果 聚笨乙烯換算重量平均分子量為3 7χι〇5,數量平均分子量 為 8.9xl〇4。 (GPC分析法) 聚苯乙烯換算重量平均分子量及數量平均分子量是利 用GPC所求出。製作GPC的校準曲線時使用POLYMER LABORATORIES公司製造的標準聚苯乙烯。將欲測定的 聚合物溶解於四氳呋喃中以達到約0,02 wt%的濃度,將溶 液10 /zL注入至GPC裝置中。 GPC裝置是使用島津製作所製造的LC-10ADvp。管柱 是串聯使用兩支POLYMER LABORATORIES公司製造的 PLgel 10 μ m MIXED-B 管柱(300 mmx7.5 mm),於管柱 中於25°C下以LO mL/min的流速流動著作為移動相的四 30 200917893 氫呋喃。檢測器使用的是uv檢測器並測定228 nm的吸光 度。 (1—2 :有機EL元件的製作:m〇〇3層) 使用表面上圖案化有IT0薄膜的玻璃基板來作為基 板’於該ITO薄膜上,以如下順序利用真空蒸鍍法來蒸鑛 膜厚為10 nm的M0O3層。此時的M〇〇3層的光透射率在 光波長440 nm下約為80% ’在光波長5〇〇 nm下约為7〇0/〇, 在光波長620 nm下約為82%。 使用蒸鍍遮罩部分地覆蓋玻璃基板的具有IT〇薄膜一 側的面’使用基板固持器將此玻璃基板安裝於蒸鍍腔室内。 將Μο〇3粉末(ALDRICH公司製造’純度為99.99%) 裝填至箱式(box type)的昇華物質用的鎢舟中,並利用開 有孔的盍加以遮蓋以使材料不會飛散,繼而放置於蒸鍍腔 室内。 …The electron injecting layer is disposed between the electron transporting layer and the cathode or between the cathode and the cathode. In the case of the electron injection layer, the above metal oxide may be used. In other cases, depending on the type of the light-emitting layer, the electron injection/曰 may be exemplified by metal or soil test, or one or The alloy I is an oxide of the above metal, a toothed material, and a mixture of the above materials of the plate 2. Examples of metals and their oxides and substances can be exemplified by lithium, sodium, potassium, rubidium, planer, sodium oxide, sodium fluoride, potassium oxide, fluorination, oxygen and potted bismuth, and fluorinated hammer. , carbonic acid. Further, examples of soil test & & quot 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 Electric 26 200917893 &lt;cathode material&gt; is the material of the cathode used in the two-piece material, the material with high yield, the material of == electron injection, and the metal of the metal, the metal of the test, and the transition metal Lithium, sodium, potassium, strontium, planer, strontium, magnesium, levy: metals such as: zinc, gram, 锢, 钸r #, 钡, 钡, aluminum, 铳, vanadium, medium- 钸a metal such as ruthenium or the like, or a metal of one of the above metals and alloys, such as titanium, Si, Lu, He, and - in the above-mentioned metals and alloys - "叮 ° ° gold" or graphite or graphite inter-layer compounds, etc. The examples of human gold can be exemplified by: magnesium-silver alloy, gold of gold, lithium-button, Λ», paste 1, magnesium-aluminum alloy, indium-silver, gold, lithium-magnesium alloy, lithium For the indium alloy and the transparent conductive electrode, for example, a conductive indium or the like can be used. Specifically, the conductive metal oxide can be made of indium tin nTm f: tin oxide, and an oxide-depleting compound, that is, oxygen (10). ), the conductive organic substance can be used as an organic transparent conductive material such as a membrane, a singularity, a polystimene or a derivative thereof. The cathode has a laminated structure of two or more layers. Further, the electron injecting layer is sometimes used as a cathode. The film thickness of the cathode can be appropriately selected in consideration of electrical conductivity and durability, and = 1 〇 mn 10 (four)' It is preferably 2 〇 〜 ~ ... more preferably 50 nm ~ 500 nm. The method of making the cathode can be used for the operation of the air, the sputtering method, and the lamination method for bonding the metal film. 27 200917893 &lt;Insulating layer&gt; The insulating layer having a film thickness of 2 nm or less which can be arbitrarily possessed by the organic EL element of the present invention has a function of facilitating charge injection. (IV) The above-mentioned insulating material can be exemplified by metal fluoride. a compound, a metal oxide, an organic insulating material, etc. An organic EL element provided with an insulating layer having a film thickness of 2 nm or less can be exemplified by an organic layer having a film thickness of 2 nm or less adjacent to the cathode. An EL element and an organic EL element provided with an insulating layer having a film thickness of 2 nm or less adjacent to the anode. [The organic EL device of the present invention can be used as a planar light source, a segment display device, and a dot shape. Matrix display device (d〇t In order to obtain planar light emission by using the organic EL element of the present invention, it is only necessary to arrange a planar anode and a cathode so as to overlap each other. A method of providing a mask having a pattern-like window on a surface of the planar light-emitting device, a method of forming an organic layer of the non-light-emitting portion to be extremely thick, and substantially not emitting light, or causing ablation in an anode or a cathode A method of forming any one or both of the electrodes into a pattern. By using any of these methods to form a pattern and arranging a plurality of electrodes in a manner of being independently turnable on/off (0N/0FF), A segment type display element capable of displaying numbers, characters, or simple symbols. Further, in order to form the matrix element, the anode and the cathode may be formed in a strip shape and arranged in an orthogonal I form. Partial color display and colorful display can be realized by a method of separately applying a plurality of kinds of light-emitting materials having different light-emitting colors or a method of using a color filter or a color conversion filter. The dot matrix element 28 200917893 can be driven by passive or combined with a thin film transistor (Thin_Film Transistor ’TFT). The display elements can be used as display devices for brains, televisions, mobile terminals, mobile phones, car navigation, viewfinders of video cameras, and the like. Further, the above-mentioned planar light-emitting element is of a self-luminous thin type, and can be suitably used as a planar light source for a backlight of a liquid crystal display device or a planar light source for illumination. Further, when a flexible substrate is used, it can also be used as a curved light source or display device. EXAMPLES Hereinafter, the present invention will be described in detail with reference to Examples and Comparative Examples, but the present invention is not limited to the Examples and Comparative Examples. &lt;Example 1&gt; (1 - 1: Preparation of electron blocking layer material) In a separable flask equipped with a stirring blade, a baffle, a length-adjustable nitrogen introduction tube, a cold/coil tube, and a thermometer, 2 was added. , 7-bis(1,3,2-dioxaborolanyl)-9,9-dioctylfluorene 158.29 parts by weight, bis-(4-disindolyl)-4-(1-mercaptopropylidene) 136.11 parts by weight of aniline, 27 parts by weight of trioctylguanidinium chloride (Aliquat 336 manufactured by HENKEL Co., Ltd.) and 1800 parts by weight of toluene. On the one hand, nitrogen gas flows from the nitrogen introduction tube, and the temperature is raised to the surface under scramble. 90 ° C. After adding 0.066 parts by weight of acetic acid and 0.45 parts by weight of tris(o-tolyl)phosphine, 573 parts by weight of a 17.5% aqueous sodium carbonate solution was added dropwise over 1 hour. After the completion of the dropwise addition, the nitrogen introduction tube was lifted from the liquid surface to be kept under reflux for 7 hours, and then 3.6 parts by weight of phenylboric acid was added, and 29 200917893 was kept under reflux for 14 hours, and then the mixture was cooled to room temperature. After removing the aqueous layer of the reaction liquid, the reaction liquid layer was diluted with toluene, and then washed with 3% acetic acid aqueous solution and ion parent water. After adding 13 parts by weight of N,N-diethyldithiocarbamate-methyl trihydrate to the liquid-separated oil layer and dissolving for 4 hours, the liquid-reactive oxygen is passed through the mixing column of the oxidized Weigel. Then, in the &amp; column, the toaster was cleaned by toluene (four). The filtrate and the washing liquid were mixed and added dropwise to a decyl alcohol towel to record the polymer. The polymer obtained by the separation of the sediment: After washing with methanol, the polymer was dried by vacuum drying to obtain 192 parts by weight of the polymer. The obtained polymer is referred to as polymer compound 1. The weight average molecular weight and the number average molecular weight of the polymer compound 1 were determined by the following gel permeation chromatography (GPC) analysis method, and the weight average molecular weight of the polymer compound 1 was 3 7 χι. 〇5, the number average molecular weight is 8.9 x l 〇 4. (GPC analysis method) The weight average molecular weight and the number average molecular weight in terms of polystyrene were determined by GPC. Standard polystyrene manufactured by POLYMER LABORATORIES was used to make a calibration curve for GPC. The polymer to be measured was dissolved in tetrahydrofuran to a concentration of about 0,02 wt%, and the solution 10 /zL was injected into a GPC apparatus. The GPC device is a LC-10ADvp manufactured by Shimadzu Corporation. The column is a PLgel 10 μ m MIXED-B column (300 mm x 7.5 mm) manufactured by two POLYMER LABORATORIES companies in series, and the mobile phase is flowed at a flow rate of LO mL/min at 25 ° C in the column. Of the four 30 200917893 hydrogen furan. The detector used a uv detector and measured absorbance at 228 nm. (1-2: Production of Organic EL Element: m〇〇3 Layer) A glass substrate having an IOK film patterned on its surface was used as a substrate on the ITO film, and the film was vapor-deposited by vacuum evaporation in the following order. M0O3 layer with a thickness of 10 nm. The light transmittance of the M〇〇3 layer at this time is about 80% at a light wavelength of 440 nm, which is about 7 〇0/〇 at a light wavelength of 5 〇〇 nm and about 82% at a light wavelength of 620 nm. The surface of the glass substrate partially covering the side of the IT film was deposited using a vapor deposition mask. The glass substrate was mounted in the vapor deposition chamber using a substrate holder. Μο〇3 powder (purity of 99.99% manufactured by ALDRICH) was loaded into a tungsten boat for box type sublimation materials, and covered with a perforated crucible so that the material did not fly, and then placed In the evaporation chamber. ...

使崧鍍腔室内的真空度小於等於3xl〇-5Pa,利用電阻 加熱法逐漸加熱M0O3並充分地進行脫氣,然後進行蒸 鍍。使蒸鍍過程中的真空度小於等於9xl〇-5Pa。膜厚以^ 瘵鍍速度是利用晶體振盪器(crystal 〇scillat〇r) 一直監控 的。在Mo〇3的蒸鍍速度達到約〇 28 nm/s的時刻打開主^ 板(main shutter),開始在基板上進行成膜。蒸鍍過程^ 使基板旋轉以使膜厚均勻。將蒸鍍速度控制為上述速度而 進行約36秒的成膜,獲得設置有膜厚約為1〇 nm的蒸 膜的基板。 …X 將所獲得的基板取出至大氣中,於潔淨室中保管2 31 200917893 =進仃曝露處理。處理過財,潔淨室巾大氣進行 換氣,而在濕度為50%±1%、溫度為2rc±rc的範圍内進 行调整。 (1 — 3 ··有機EL元件的製作:其他層的製作及密封) 、其次,在所獲得的經曝露處理的M〇〇3層上,利用旋 轉塗佈法將上述(Η )中所獲得的電子阻擔層材料成膜, =膜厚為2Gmn的電子阻擋層^將取出電極部及密封區 ,所成膜的電子阻擋層除去,利用加熱板於細。c下供 烤20分鐘。 、 其後’於電子阻擋層上,藉由旋轉塗伟法將高分子發 光有機材料(RP158 SUMAT職公輕造)颜,形成膜 厚為90 rnn的發光層。將取出電極部及密封區域中所成膜 的發光層除去。 、 此後直至密封為止的製程是在真空巾錢氣中進行 的,以使製程中的元件不曝露於大氣中。 於真空加熱室中,於約10(rc的基板溫度下對基板加 熱60分鐘。此後將基板移至蒸舰室巾,以在發光部及取 出電極部上形成陰極的方式,於發光層面上對準 (aHgnmef)陰極遮罩。進而,一方面使遮罩以及基板旋 轉方面条鐘陰極。作為陰極,是利用電阻加熱法對金屬 Ba進行加熱並以約ο ] nm/s的蒸鑛速度基鍍成膜厚5 nm」繼而使用電子束蒸鍍法於此金屬Ba上二約〇 2'nm/s 的瘵鍍速度將A1蒸鍍成膜厚150 nm。 其後,將基板與預先準備的周邊塗佈有1;¥硬化樹脂 32 200917893 巧密::破璃相貼合,絲於真空巾,之後賴大氣壓下, 猎由照射UV而加以固定,製成發光區域為2 mmx2 mm的 =機el元件。所獲得的有機EL元件具有玻璃基板/ιτ〇 、Μ〇〇3層/電子阻擋層/發光層/Ba層/Α1層/密封玻璃的層 構成。 (1—4 :有機元件的評價) 對所製作的元件進行通電,將發光達到1〇cd/m2的電 【。己,為發光開始電壓。又,進行通電以使亮度達到綱。The degree of vacuum in the ruthenium plating chamber was set to 3 x 10 Å to 5 Pa, and M0O 3 was gradually heated by a resistance heating method, and degassing was sufficiently performed, followed by evaporation. The degree of vacuum in the evaporation process is made less than or equal to 9 x 1 〇 -5 Pa. The film thickness is always monitored by a crystal oscillator (crystal 〇scillat〇r). When the vapor deposition rate of Mo〇3 reaches about 28 nm/s, the main shutter is turned on to start film formation on the substrate. The evaporation process ^ rotates the substrate to make the film thickness uniform. The film formation was carried out for about 36 seconds by controlling the vapor deposition rate to the above speed, and a substrate provided with a vapor film having a film thickness of about 1 〇 nm was obtained. ...X The obtained substrate was taken out to the atmosphere and stored in a clean room. 2 31 200917893 = Pre-exposure treatment. After the treatment, the clean room towel is ventilated, and the humidity is adjusted within the range of 50% ± 1% humidity and 2 rc ± rc. (1 - 3 · Production of organic EL element: production and sealing of other layers), and secondly, obtained in the above-mentioned (Η) by the spin coating method on the obtained M〇〇3 layer of the exposed treatment The electron blocking layer material is formed into a film, and the electron blocking layer having a film thickness of 2 Gmn is taken out, and the electrode portion and the sealing region are taken out, and the formed electron blocking layer is removed, and is thinned by a heating plate. B. Bake for 20 minutes. Then, on the electron blocking layer, a polymer light-emitting organic material (RP158 SUMAT) was formed by a spin coating method to form a light-emitting layer having a film thickness of 90 rnn. The light-emitting layer formed in the electrode portion and the sealing region was taken out. Thereafter, the process up to the sealing is carried out in a vacuum towel so that the components in the process are not exposed to the atmosphere. The substrate was heated in a vacuum heating chamber at a substrate temperature of about 10 (rc) for 60 minutes. Thereafter, the substrate was transferred to a steaming house towel to form a cathode on the light-emitting portion and the extraction electrode portion, and on the light-emitting layer. a quasi-a (aHgnmef) cathode mask. Further, on the one hand, the mask and the substrate are rotated in terms of a clock cathode. As a cathode, the metal Ba is heated by a resistance heating method and plated at a vaporization rate of about ο nm / s. The film formation thickness was 5 nm. Then, A1 was vapor-deposited to a film thickness of 150 nm on the metal Ba by a electron beam evaporation method at a temperature of about 2 Å/s on the metal Ba. Thereafter, the substrate and the prepared periphery were prepared. Coated with 1; ¥ hardened resin 32 200917893 Qiao Mi:: the glass is bonded, the silk is applied to the vacuum towel, and then under the atmospheric pressure, the hunting is fixed by the irradiation of UV to make the light-emitting area 2 mmx2 mm = machine el The obtained organic EL device has a layer structure of a glass substrate / Μ〇〇 3 layer / 电子 3 layer / electron blocking layer / luminescent layer / Ba layer / Α 1 layer / sealing glass. (1 - 4: evaluation of organic components) Powering on the fabricated components, the light is illuminated to 1 〇cd/m2. Light emission start voltage and, so that brightness is energized outline.

Cd/m \測定發光效率及亮度減半壽命。將結果示於表1 中可Η察到,與後述比較例1相比,該實施例1的發光 效率較高、發光開始電壓較低、且亮度減半壽命顯著地延 長。 &lt;實施例2&gt; 於步驟(1 — 2)中將曝露期間設定為9天,除此以外 以與實施例1的(1 — 1)〜(I — 4)相同的方式操作,製 作有機EL元件並進行評價。將結果示於表1中。可觀察 到,與後述比較例1相比,該實施例2的發光效率較高、 發光開始電壓較低、且亮度減半壽命顯著延長。 &lt;實施例3 &gt; 於步驟(1-2)中將曝露期間設定為2〇天,除此以外, 以與實施例1的(1-1)〜(1—4)相同的方式進行操作, 製作有機EL元件並進行評價。將結果示於表1中f可觀 察到,與後述比較例1相比,該實施例3的發光效率較高、 發光開始電壓較低、且亮度減半壽命延長。 同 33 200917893 &lt;比較例1&gt; 於步驟(丨―2)中不設置曝露期間,而是在獲得蒸鍍 膜後立即進入步驟(1 — 3),除此以外以與實施例1相同的 方式操作,製作有機EL元件並進行評價。將結果示於表1 中。 [表1] 流一電壓特性及發来特性 曝露天數 最大功率效率 (lm/W) 發光開始電壓 (V ; at 10cd/m2) 亮度減半壽命 (hr ; at 2000 cd/m2) 實施例1 2天 0.57 4.05 324 實施例2 9天 0.67 3.94 394 實施例3 20天 0.84 r 3.76 234 比較例1 無 0.52 429 209 範圍當視後附的申請專利範圍 雖然本發明已以較佳實施例揭露如上,然其並非用以 限^本發明,任何熟習此技藝者,在不脫離本發明的精神 ί 些許的更動與潤饰,因此本發明的保護Cd/m \ measures luminous efficiency and brightness halving life. The results are shown in Table 1. As compared with Comparative Example 1 described later, the light-emitting efficiency of Example 1 was high, the light-emission starting voltage was low, and the luminance halving life was remarkably prolonged. &lt;Example 2&gt; An organic EL was produced in the same manner as (1 - 1) to (I - 4) of Example 1 except that the exposure period was set to 9 days in the step (1-2). Components are evaluated. The results are shown in Table 1. It can be observed that the light-emitting efficiency of the second embodiment is higher than that of the comparative example 1 described later, the light-emission starting voltage is low, and the luminance half-life is remarkably prolonged. &lt;Example 3 &gt; In the same manner as (1-1) to (1-4) of Example 1, except that the exposure period was set to 2 days in the step (1-2) , Organic EL elements were produced and evaluated. The results are shown in Table 1. It is observed that the luminous efficiency of the third embodiment is higher than that of the comparative example 1 described later, the light-emission starting voltage is low, and the luminance half-life is prolonged. Same as 33 200917893 &lt;Comparative Example 1&gt; In the step (丨-2), the exposure period is not set, but the step (1) is immediately performed after the vapor deposition film is obtained, and otherwise the same operation as in the embodiment 1 is performed. An organic EL element was produced and evaluated. The results are shown in Table 1. [Table 1] Flow-voltage characteristics and characteristics of exposure Open-air number maximum power efficiency (lm/W) Luminescence start voltage (V; at 10 cd/m2) Luminance halving life (hr; at 2000 cd/m2) Example 1 2 Day 0.57 4.05 324 Example 2 9 days 0.67 3.94 394 Example 3 20 days 0.84 r 3.76 234 Comparative Example 1 No 0.52 429 209 Scope The scope of the appended claims is disclosed as the preferred embodiment of the present invention. It is not intended to limit the invention, and any person skilled in the art will be able to modify and modify the invention without departing from the spirit of the invention.

圖式簡單說明】 所界定者為準。 益 【主要元件符號說明】 無 34A brief description of the schema] is defined as the standard. Benefit [Main component symbol description] None 34

Claims (1)

200917893 十、申請專利範圍: 1. 一種有機電致發光元件’其具有陽極、發光層、陰 極、以及設置於上述陽極與上述發光層之間或者上述發光 層與上述陰極之間的金屬氧化物層,且上述金屬氧化物層 是藉由如下步驟而獲得的層: (A) 於構成元件的其他層上堆積金屬氧化物而獲得 未經處理的金屬氧化物層的步驟;以及 (B) 於含氧環境下對上述未經處理的金屬氧化物層 進行曝露處理的步驟。 2. 如申請專利範圍第1項所述的有機電致發光元 其中 上述金屬氧化物層是電洞注入層,或者盥上 或電洞注入層直接相接觸而設置。 / 曰 3·如申請專利範圍第1項所述的有機電致發光元件, 其中 上述金屬氧化物層的可見光透射率大於等於50%。 4·如申請專利範圍第1項所述的有機電致發光, 其中 上述金屬氧化物是選自由顧氧化物、釩氧化物、鶴氧 化物、組氧化物以及該魏化物的齡物雜成的族群。 5·如申請專職㈣丨項所述的有機電致發光 其中 上述含氧環境是控制於濕度為〇 〇1%〜95%、氧 為0.0P/。〜30%、溫度為1〇t〜6〇t的範圍内。/又 35 200917893 6.一種製造方法’其是製造如φ請專利範圍第i項所 述的有機電致發光元件的方法,包括如下步驟: 於構成元件的其他層上堆積金屬氧化物而獲得未經處 理的金屬氧化物層的步驟;以及 將上述未經處理的金屬氧化物層曝露於含氧環境下的 步驟。200917893 X. Patent Application Range: 1. An organic electroluminescent device having an anode, a light-emitting layer, a cathode, and a metal oxide layer disposed between the anode and the light-emitting layer or between the light-emitting layer and the cathode And the above metal oxide layer is a layer obtained by the following steps: (A) a step of depositing a metal oxide on other layers constituting the element to obtain an untreated metal oxide layer; and (B) The step of subjecting the above untreated metal oxide layer to an exposure treatment in an oxygen atmosphere. 2. The organic electroluminescent element according to claim 1, wherein the metal oxide layer is a hole injection layer, or the crucible or the hole injection layer is directly in contact with each other. The organic electroluminescence device according to claim 1, wherein the metal oxide layer has a visible light transmittance of 50% or more. 4. The organic electroluminescence according to claim 1, wherein the metal oxide is selected from the group consisting of oxides, vanadium oxides, hegan oxides, group oxides, and ages of the derivative. Ethnic group. 5. For example, apply for organic electroluminescence as described in (4). The above oxygen-containing environment is controlled by a humidity of 〇1%~95% and an oxygen of 0.0P/. ~30%, the temperature is in the range of 1〇t~6〇t. /35 200917893 6. A method of manufacturing, which is a method of producing an organic electroluminescence device according to the invention of claim 1, comprising the steps of: depositing a metal oxide on other layers constituting the element to obtain a step of treating the metal oxide layer; and exposing the above untreated metal oxide layer to an oxygen-containing environment. 36 200917893 七、 指定代表圖: (一) 本案指定代表圖為:無。 (二) 本代表圖之元件符號簡單說明: 無 八、 本案若有化學式時,請揭示最能顯示發明特徵 的化學式: 無36 200917893 VII. Designation of Representative Representatives: (1) The representative representative of the case is: None. (2) A brief description of the symbol of the representative figure: None 8. If there is a chemical formula in this case, please disclose the chemical formula that best shows the characteristics of the invention: None
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