TW200916879A - Bonding method for chip on glass - Google Patents

Bonding method for chip on glass Download PDF

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Publication number
TW200916879A
TW200916879A TW96136978A TW96136978A TW200916879A TW 200916879 A TW200916879 A TW 200916879A TW 96136978 A TW96136978 A TW 96136978A TW 96136978 A TW96136978 A TW 96136978A TW 200916879 A TW200916879 A TW 200916879A
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TW
Taiwan
Prior art keywords
conductive film
bumps
glass substrate
die
bump
Prior art date
Application number
TW96136978A
Other languages
Chinese (zh)
Inventor
Ping-Liang Wu
Jian-An Lu
Original Assignee
Int Semiconductor Tech Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Int Semiconductor Tech Ltd filed Critical Int Semiconductor Tech Ltd
Priority to TW96136978A priority Critical patent/TW200916879A/en
Publication of TW200916879A publication Critical patent/TW200916879A/en

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Abstract

Bonding method for chip on glass comprises the steps of providing a chip having an active surface and a plurality of bumps formed on the active surface, disposing a non-conductive film (NCF) on each bump of the chip, providing a glass substrate having an upper surface and a plurality of connection pads formed on the upper surface, wherein each connection pad corresponded to each bump and the non-conductive film located between each bump and each connection pad, and bonding the chip to the glass substrate by hot pressing, wherein each bump direct contacted with each connection pad and the non-conductive film wrapped each bump and each connection pad.

Description

200916879 九、發明說明·· 【發明所屬之技術領域】 本發明係有關於一種晶粒與基板之結合方法,特別係 有關於一種凸塊與連接墊直接接觸並以一非導電膜包覆 凸塊與連接墊之晶粒與玻璃基板之結合方法。 【先前技術】 習知液晶顯示器之驅動IC與液晶面板(玻璃基板)之 結合大都是使用異方性導電膜(Anisotropic Conductive Film,ACF),其係先將異方性導電膜貼在液晶面板上,再 以熱壓方式將驅動IC直接接合於液晶面板上,而異方性 導電膜除了可接合驅動IC與液晶面板外,其内含之導電 粒子亦可電性連接驅動IC與液晶面板,惟,異方性導電 膜之價格昂貴,且在熱壓製程中異方性導電膜内含之導電 粒子不易均勻分散,易發生金凸塊上導電粒子不足而開路 或粒子過多疊合而造成相鄰金凸塊短路。 【發明内容】 本發明之主要目的係在於提供一種晶粒與玻璃基板 之結合方法,其包含提供一晶粒,該晶粒係具有一主動面 及衩數個形成於該主動面之凸塊;設置一 一非導電膜於該晶200916879 IX. INSTRUCTION DESCRIPTION OF THE INVENTION TECHNICAL FIELD The present invention relates to a method for bonding a die to a substrate, and more particularly to a bump directly contacting a connection pad and covering the bump with a non-conductive film. A method of bonding to a die and a glass substrate of a connection pad. [Prior Art] Conventionally, a combination of a driving IC of a liquid crystal display and a liquid crystal panel (a glass substrate) is an anisotropic conductive film (ACF) which is first attached to a liquid crystal panel by an anisotropic conductive film. Then, the driving IC is directly bonded to the liquid crystal panel by hot pressing, and the anisotropic conductive film can be electrically connected to the driving IC and the liquid crystal panel, in addition to the driving IC and the liquid crystal panel. The anisotropic conductive film is expensive, and the conductive particles contained in the anisotropic conductive film are not easily dispersed uniformly during the hot pressing process, and the conductive particles on the gold bump are insufficient to be opened or the particles are excessively superposed to cause adjacent The gold bump is shorted. SUMMARY OF THE INVENTION The present invention is directed to a method for bonding a die to a glass substrate, comprising: providing a die having an active face and a plurality of bumps formed on the active face; Setting a non-conductive film on the crystal

祖畀涊玻墦基板,其 且該非導電膜係包復 200916879 各該凸塊及各該連接墊,本發明係以該非導電膜取代習知 之異方性導電膜,利用該非導電膜之樹脂硬化收縮特性之 作用使§亥些凸塊與該些連接墊結合並電性連接,且可保護 接點及維持良好的可靠度,此外,該非導電膜之價格亦較 低於異方性導電膜’因此,可大幅降低製作成本。 【實施方式】 請參閱第1A至id圖,其係本發明之第一較佳實施 例’一種晶粒與玻璃基板之結合方法,其步驟係詳述如 下·首先,請參閱第1A圖’提供一晶粒1 〇,該晶粒工〇 係具有一主動面10a及複數個形成於該主動面l〇a之凸塊 11,在本實施例中,各該凸塊丨i係具有一第一接面丨la, 且該些凸塊11之該些第一接面丨丨a係共平面;接著,請 參閱第1B圖’設置一非導電膜20於該晶粒1〇之各該凸 塊Π上,在本實施例中,該非導電膜2 〇係呈單片狀;之 後’ s青參閱第1C圖,提供一玻璃基板30,該玻璃基板3〇 係具有一上表面30a及複數個形成於該上表面3〇a之連接 塾3 1 ’各§玄連接塾3 1係對應該晶粒1 〇之各該凸塊11, 且该非導電膜2 0係位於各該凸塊11與各該連接墊3 1之 間’在本實施例中,各該連接墊3 1係具有一第二接面3 i a , 且§玄些連接塾3 1之該些第二接面3 1 a係共平面,較佳地, 該些凸塊11之該些第一接面11 a係平行該些連接塾3 1之 3玄些第一接面31a,最後’§青參閱第id圖,熱壓結合該晶 粒10與該玻璃基板30,其中各該凸塊1丨之各該第一接面 1 la係直接接觸各該連接墊3 1之各該第二接面3 la,且該 6 200916879 非導電膜20係包覆各該凸塊11及各該連接墊31,在本實 施例中’由於該晶粒10與該玻璃基板3 0之熱膨脹係數 (CTE)接近’因此’在高低溫循環的測試環境下,可大幅 減少接觸不良情形之發生。 請參閱第2A至2D圖,其係本發明之第二較佳實施 例,一種晶粒與玻璃基板之結合方法,本實施例基本上與 第一較佳實施例相同,其差異處僅在於該非導電膜係 呈多片狀,較佳地,該非導電膜2〇係以印刷方式形成於 該B曰粒1 〇之各該凸塊i i上,又,請參閱第2D圖,在本 實施例中,該晶粒10之該主動面1〇a與該玻璃基板3〇之 該上表面30a之間係具有一空間s,該空間s可用以提高 該晶粒10之散熱效果,較佳地,該空間s係位於各該凸 塊11之間。 本發明係以該非導電膜20取代習知之異方性導電 膜利用該非導電膜2 0之樹脂硬化收縮特性之作用使該 些凸塊11與該些連接墊31結合並電性連接,且可保護接 點及維持良好的可靠度,此外,該非導電膜2G之價格亦 較低於異方性導電膜,因此’可大幅降低製作成本。 、本發明之保護範圍當視後附之申請專利範圍所界定 者為準,任Μ熟知此項技藝者,纟不脫離本發明之精神和 範圍内所作之任何變化與修改,均屬於本發明之保護範 圍。 ’、 【圖式簡單說明】 第1Α至丨1)圖··依據本發明之第—較佳實施例,_ 200916879 與玻璃基板之結合方法剖面示意圖。 第2 A至2D圖:依據本發明之第二較佳實施例,另一晶粒 與玻璃基板之結合方法剖面示意圖。 【主要元件符號說明】 10 晶粒 10a 主動面 11凸塊 11a 第一接面 20 非導電膜 30 玻璃基板 30a 上表面 31連接墊 3 1a 第二接面 S 空間 8The non-conductive film is used to replace the bumps and the connecting pads of the 200916879, and the non-conductive film replaces the conventional anisotropic conductive film, and the resin of the non-conductive film is hardened and shrunk. The function of the feature makes the bumps and the connection pads electrically and electrically connected, and can protect the contacts and maintain good reliability. In addition, the price of the non-conductive film is lower than that of the anisotropic conductive film. Can significantly reduce production costs. [Embodiment] Please refer to FIGS. 1A to 1D, which is a first preferred embodiment of the present invention, a method for bonding a crystal grain to a glass substrate, the steps of which are detailed below. First, please refer to FIG. 1A. A die 1 has an active surface 10a and a plurality of bumps 11 formed on the active surface 10a. In this embodiment, each of the bumps has a first The first surface 丨丨a of the bumps 11 is coplanar; then, please refer to FIG. 1B to provide a non-conductive film 20 for each of the bumps of the die 1 In the present embodiment, the non-conductive film 2 is monolithic; after seeing FIG. 1C, a glass substrate 30 having an upper surface 30a and a plurality of layers is provided. a connection 塾3 1 'each of the upper surface 3 〇 a 玄 塾 塾 3 1 corresponds to each of the bumps 11 of the dies 1 , and the non-conductive film 20 is located at each of the bumps 11 and Between the connection pads 3 1 'in this embodiment, each of the connection pads 31 has a second junction 3 ia , and the second junctions of the connection 塾 3 1 3 1 a is a common plane. Preferably, the first joints 11 a of the bumps 11 are parallel to the first joints 31 a of the connecting strips 3 1 , and finally § 青 see the id The first die 1 la of each of the bumps 1 1 is directly in contact with each of the second pads 3 la of each of the connection pads 31, And the 6 200916879 non-conductive film 20 covers each of the bumps 11 and the connection pads 31. In the embodiment, 'the thermal expansion coefficient (CTE) of the crystal grain 10 and the glass substrate 30 is close to 'therefore' In the test environment of high and low temperature cycle, the occurrence of contact failure can be greatly reduced. Referring to FIGS. 2A to 2D, which are a second preferred embodiment of the present invention, a method for bonding a die to a glass substrate, the embodiment is basically the same as the first preferred embodiment, and the difference lies only in the non- The conductive film is in a plurality of sheets. Preferably, the non-conductive film 2 is formed on the bumps ii of the B particles 1 by printing. Referring to FIG. 2D, in this embodiment, The space between the active surface 1A of the die 10 and the upper surface 30a of the glass substrate 3 has a space s, which can be used to improve the heat dissipation effect of the die 10. Preferably, the space A space s is located between each of the bumps 11. In the present invention, the non-conductive film 20 is used to replace the conventional anisotropic conductive film, and the bumps 11 are bonded and electrically connected to the connection pads 31 by the action of the resin shrinkage and shrinkage characteristics of the non-conductive film 20, and can be protected. The contact and the maintenance of good reliability, in addition, the price of the non-conductive film 2G is also lower than the anisotropic conductive film, so 'the production cost can be greatly reduced. The scope of the present invention is defined by the scope of the appended claims, and any changes and modifications made by those skilled in the art without departing from the spirit and scope of the present invention belong to the present invention. protected range. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a cross-sectional view showing a method of combining a glass substrate according to a first preferred embodiment of the present invention. 2A to 2D are schematic cross-sectional views showing a method of bonding another die to a glass substrate in accordance with a second preferred embodiment of the present invention. [Main component symbol description] 10 die 10a active surface 11 bump 11a first junction 20 non-conductive film 30 glass substrate 30a upper surface 31 connection pad 3 1a second junction S space 8

Claims (1)

200916879 十、申請專利範圍: 1、一種晶粒與玻璃基板之結合方法,係包含: 提供一晶粒,該晶粒係具有一主動面及複數個形成於 該主動面之凸塊,且各該凸塊係具有一第一接面; 设置一非導電膜於該晶粒之各該凸塊上; 提供一玻璃基板,該玻璃基板係具有一上表面及複數 個形成於該上表面之連接墊,各該連接墊係具有一第 二接面,且各該連接墊係對應該晶粒之各該凸塊,而 忒非導電膜係位於各該凸塊與各該連接墊之間;以及 熱壓結合該晶粒與該玻璃基板,其中各該凸塊之各該 第一接面係直接接觸各該連接墊之各該第二接面,且 該非導電膜係包覆各該凸塊及各該連接墊。 如申請專利範圍第 方法,其中該此Λ 項所述之晶粒與玻璃基板之結合200916879 X. Patent Application Range: 1. A method for bonding a crystal grain to a glass substrate, comprising: providing a crystal grain having an active surface and a plurality of bumps formed on the active surface, and each of the The bump has a first junction; a non-conductive film is disposed on each of the bumps of the die; and a glass substrate is provided, the glass substrate having an upper surface and a plurality of connection pads formed on the upper surface Each of the connection pads has a second junction, and each of the connection pads corresponds to each of the bumps of the die, and the non-conductive film is located between each of the bumps and each of the connection pads; and the heat And bonding the die to the glass substrate, wherein each of the first junctions of each of the bumps directly contacts each of the second junctions of the connection pads, and the non-conductive film covers each of the bumps and each The connection pad. For example, the method of claiming the scope of the method, wherein the combination of the die and the glass substrate described in the item 墊之該些第二接面。The second junctions of the pads. 面之間係具有一空間。There is a space between the faces. 予利犯圍弟5項所述之晶粒與玻璃基板之結合 其中該空間係位於各該凸塊之間。The combination of the grain and the glass substrate described in the fifth item of the brothers is provided, wherein the space is located between each of the bumps.
TW96136978A 2007-10-02 2007-10-02 Bonding method for chip on glass TW200916879A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI492342B (en) * 2011-10-12 2015-07-11 Novatek Microelectronics Corp Ic chip package and chip-on-glass structure using the same
US9236360B2 (en) 2011-10-12 2016-01-12 Novatek Microelectronics Corp. IC chip package and chip-on-glass structure using the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI492342B (en) * 2011-10-12 2015-07-11 Novatek Microelectronics Corp Ic chip package and chip-on-glass structure using the same
US9236360B2 (en) 2011-10-12 2016-01-12 Novatek Microelectronics Corp. IC chip package and chip-on-glass structure using the same

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