TW200845456A - Light emitting device including luminescent ceramic and light-scattering material - Google Patents

Light emitting device including luminescent ceramic and light-scattering material Download PDF

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TW200845456A
TW200845456A TW096143729A TW96143729A TW200845456A TW 200845456 A TW200845456 A TW 200845456A TW 096143729 A TW096143729 A TW 096143729A TW 96143729 A TW96143729 A TW 96143729A TW 200845456 A TW200845456 A TW 200845456A
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Taiwan
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light
transparent material
disposed
amp
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TW096143729A
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Chinese (zh)
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TWI520401B (en
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Gerd O Mueller
Regina B Mueller-Mach
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Philips Lumileds Lighting Co
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
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    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/501Wavelength conversion elements characterised by the materials, e.g. binder
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    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/584Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride
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    • C09K11/00Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7728Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals comprising europium
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    • C09K11/00Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7728Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals comprising europium
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    • C09K11/00Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7766Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
    • C09K11/7774Aluminates; Silicates
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
    • H05B33/00Electroluminescent light sources
    • H05B33/12Light sources with substantially two-dimensional radiating surfaces
    • H05B33/14Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
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    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3205Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
    • C04B2235/3213Strontium oxides or oxide-forming salts thereof
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    • C04B2235/30Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
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    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3224Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
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    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30Constituents and secondary phases not being of a fibrous nature
    • C04B2235/38Non-oxide ceramic constituents or additives
    • C04B2235/3852Nitrides, e.g. oxynitrides, carbonitrides, oxycarbonitrides, lithium nitride, magnesium nitride
    • C04B2235/3865Aluminium nitrides
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    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30Constituents and secondary phases not being of a fibrous nature
    • C04B2235/38Non-oxide ceramic constituents or additives
    • C04B2235/3852Nitrides, e.g. oxynitrides, carbonitrides, oxycarbonitrides, lithium nitride, magnesium nitride
    • C04B2235/3873Silicon nitrides, e.g. silicon carbonitride, silicon oxynitride
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0091Scattering means in or on the semiconductor body or semiconductor body package

Abstract

A ceramic body 30 comprising a wavelength converting material is disposed in the path of light emitted by the light emitting region 31 of a semiconductor structure 12 comprising a light emitting region disposed between an n-type region and a p-type region. a layer of transparent material 36 is also disposed in the path of light emitted by the light emitting region. The transparent material may connect the ceramic body to the semiconductor structure. Particles 45 configured to scatter light emitted by the light emitting region are disposed in the layer of adhesive material. In some embodiments the particles are phosphor; in some embodiments the particles are not a wavelength-converting material.

Description

200845456 IX. Description of the Invention: TECHNICAL FIELD The present invention relates to a wavelength conversion semiconductor light-emitting device. [Prior Art] Semiconductor light-emitting devices include light-emitting diodes (LEDs), resonant cavity light-emitting diodes (RCLEDs), vertical cavity surface emitting lasers (VCSELs) and edge-emitting lasers, which are currently available at the most A list of effective light sources. It is of interest to fabricate high-brightness illumination devices that operate across the visible spectrum, and whose material systems contain IIIV semiconductors, particularly binary, ternary, and quaternary alloying elements such as gallium, aluminum, indium, and nitrogen. It can also be a group m nitride material. Typically, a Group III nitride light-emitting device is fabricated by metal organic chemical vapor deposition (M0CVD), molecular beam epitaxy (MBE), or other epitaxial techniques in sapphire, tantalum carbide, m family The epitaxial layer on the nitride is grown into a stack of semiconductor layers of different compositions and dopant concentrations. The stack often contains one or more layers of 11 types, such as germanium doped on 2 substrates, one or more light-emitting layers formed on the active region of the 11-type layer or all layers, and one or more Type p (4), such as a town doped on the active area. The electrical connection portion is formed in the ηίσρ type region because the 111-nitride light-emitting device is generally at the end of the shorter wavelength of the visible spectrum, so the light energy generated by the m-type nitride device is easily converted into a longer wavelength. Light. In the field, with the well-known cold light or fluorescent treatment, there is a first peak turbidity μ ^ , and the light of the wavelength of the * (the main light) can be converted into light with a longer ridge wavelength. (second light). The fluorescent treatment involves absorbing the primary light, such as a phosphor, and the luminescent center of the excited fluorescent material by wavelength 126504.doc 200845456 to diffuse the second light. The peak wavelength of the second light will depend on the phosphor material. This type of phosphor material can be selected to produce a second light having a particular peak wavelength. The phosphor can be placed in the illuminated path by a led in a number of ways. A group III nitride LED die covered with a layer of transparent resin is described in U.S. Patent No. 6,351, the disclosure of which is incorporated herein by reference. A growth type LED device on a single crystal light-emitting substrate is described in U.S. Patent No. 0,630,691. The use of a thin film phosphor layer on LEDs is described in U.S. Patent No. 6,696,703. Some patents describe the formation of a conformal phosphor layer on LEDs, such as the electrophoretic deposition method described in U.S. Patent No. 6,576,488, or the coating method described in U.S. Patent No. 6,650,044. Many of these phosphor layers are fragile and difficult to handle, and cannot withstand the high throughput environments created by high temperatures and LEDs. In addition, it may be difficult or impossible to form multiple phosphor layers by some processing. Instead of the above-mentioned phosphor layer, a ceramic body is formed using a wavelength converting material, which is described in more detail in U.S. Patent Application Publication No. 2,5,269, the entire disclosure of which is incorporated herein by reference. The luminescent ceramics described herein are typically self-supporting layers, each forming a semiconductor device, and then attached to or as a growing substrate for the completed semiconductor device. The luminescent ceramic tends to be stronger than the luminescent layer described above. SUMMARY OF THE INVENTION According to an embodiment of the present invention, a ceramic body includes a wavelength converting material disposed in a light emitting path of a light emitting region of a semiconductor structure, and a semiconductor structure package 126504.doc 200845456 is disposed between an n type and a p type region Light emitting area. A layer of transparent material is also disposed in the light-emitting path of the light-emitting area. The transparent material can be connected to the ceramic body and the semiconductor structure. Particulate matter configured to scatter light emitted by the illuminating region is disposed in the layer of the binder material. In some embodiments the particulate matter is a phosphor; in some embodiments the particulate matter is not a wavelength converting material. The presence of scattering particulate matter in the binder enhances the uniformity of the mixed light surface from the device and enhances the color characteristics of the mixed light. [Embodiment] The luminescent ceramic layer can be produced by heating a normal powder phosphor under pressure until the surface of the phosphor particles starts to soften and melt. Part of the molten particulate matter sticks together to form a rigid particulate agglomerate. Unlike a film, it is optically equivalent to a single large, non-photointerrupted phosphor particle. The luminescent ceramic is equivalent to a tightly packed individual phosphor particle object, making it possible for different phosphor particles. There is a small optical discontinuity between the interfaces. Since the starting material of the powdered phosphor is generally homogeneous and doped, the resulting luminescent ceramic is generally transparent, optically homogeneous and the dopant is uniformly doped throughout the ceramic body as the center of illumination. One problem with uniformly doped luminescent ceramics is that the minimum thickness of luminescent ceramics is limited to the ability to remanufacture ceramics. Many phosphors have a preferred doping range to allow the phosphor to absorb and scatter sufficiently. In a phosphor arrangement, such as a conformal layer, a preferred doping level of phosphor powder is deposited to a desired thickness to achieve the desired number of luminescent centers, which produces: the number of phosphor converted And the amount of leakage from the unconverted light-emitting diodes results in a mixed light of the desired characteristics. In luminescent ceramics, the thickness of 126504.doc 200845456 is required to be forced to a lower level of doping, if a better doping level of doped phosphor powder is used in ceramics to produce at minimum thickness. Leading to too many illuminating centers, so there will be a lot of phosphor conversion. The problem of too many illuminating centers described above is particularly serious in the case of red luminescent ceramics incorporating a blue light emitting diode and white luminescent materials for producing white mixed light. Only a small portion of the red-emitting phosphor can be used to make white mixed light; if too many red-emitting phosphors are used, the mixed light will appear too red. With a preferred luminescent center doping level in a red-emitting t-light, the number of luminescent centers that must produce the desired red-emitting light is 20 pm thick in the luminescent ceramic layer. However, the minimum production thickness of luminescent ceramics is 100 μηι. In order to achieve the desired number of luminescent centers in the glare, a lower undesired doping level of phosphor powder must be used to form the luminescent ceramic. The second problem is described in Figure 用 with transparent luminescent ceramics. A transparent cold glaze 30 is connected to a illuminating device 12. Two light rays 33 and 34 emitted from the light-emitting region η are emitted. Since the light ray 33 is emitted at a smaller angle than the surface of the normal luminescent layer than the ray ray, the ray 33 sees less sputum in the luminescent DG, and more like escaping from the luminescent genre without being converted by fluorescence. . Conversely, the ray 34 sees more of the phosphors in the glare of the terrarium, and more like the glory of the glory before the escape. If the false δ and the illuminating region 31 emit blue light and the luminescent material in the luminescent ceramics emits yellow light, the light emitted from the top surface of the center of the device appears bluer, and the light emitted from the top surface near the edge of the device appears to be more Yellow, resulting in 126504.doc 200845456 $ see an unwanted yellowish aperture around the more faint blue light ugly Figure 1 The yellow aperture problem can be reduced or eliminated by increasing the luminescence of the luminescent ceramics; that is The luminescent ceramic 30 is translucent rather than Wang Ming, often by inserting a balloon during the production of the ceramic, wherein the balloon acts as a scattering center. The problem with this method is that it is difficult to control the fingering of the airbag. Inserting too many airbags may result in too much scattering, which can reduce the extraction efficiency of the luminescent glass 30. In some embodiments of the invention, a material capable of generating scattering, such as a phosphor, is disposed between the semiconductor light emitting device and the luminescent ceramic, such as the cross-sectional view of the device shown in FIG. In the apparatus of Fig. 2, the group m nitride semiconductor structure comprises a light-emitting region 31 which is disposed between the n-type region and the germanium-type region and grown on a growth substrate (not shown). Part of the germanium type region and the light emitting region are etched away to expose a portion of the n type region. The Ρ and η contacts 39 and 38, which are often the reflective contacts, are formed on the exposed portions of the p-type region and the n-type region of each of the semiconductor structures. The semiconductor structure 12 is electrically and physically connected to a fixture 43' by meandering core interconnections 42 and 41, which may be, for example, solder or gold interconnects. Before or after the semiconductor structure 12 is attached to the fixture 43, the underfill material 37 may be injected into any space between the semiconductor structure 12 and the fixture 43. The underfill material 37 supports the semiconductor structure 12 to prevent or reduce cracking or other damage caused by moving the growth substrate. The underfill material 3 7 may be formed such that the sidewalls 37 extend longer or even beyond the edges of the semiconductor structure 12. According to the positioning shown in Figure 2, the top surface of the semiconductor structure 12 is exposed after the growth substrate is moved 126504.doc •10-200845456. Semiconductor Structure (4) The surface may be rough or otherwise deformed to enhance light extraction, such as by photoelectrochemical etching. The glazed pottery 30 is attached to the top surface of the semiconductor structure 12. A layer of transparent material 36 is disposed between the semiconductor structure 12 and the luminescent material. Although material (4) is described herein as being transparent, it should be understood that material 36 need not be completely transparent, although in most embodiments it is preferred that material % does not absorb significant amounts of light. In some embodiments, the transparent material 36 acts as a bonding agent to attach the luminescent material to the semiconductor structure 12. The underfill (4) (4) (4) may include the width on the side of the transparent material 36.

C In some embodiments of the invention, the material that produces the scattering is formed on the luminescent material that is connected to the semiconductor light-emitting device, the cross-section in the device. As shown in FIG. 2, in the apparatus of FIG. 4, the luminescent ceramic is connected to the m-group nitride semiconductor structure fixed on the fixing member, such as through a transparent (four) mixture layer such as poly(tetra) epoxy or crystal. A vapor-conducting semiconductor-bonded transparent material 36 that is circularly bonded to the mounting-mounting member is formed on the luminescent material. In some embodiments of the present invention, a layer of transparent material 'disposed as shown in Fig. 2' disposed between the semiconductor structure 12 and the luminescent layer 3 can be formed in combination in the luminescent ceramic layer as shown in FIG. The material is disposed inside the transparent material 36 of Fig. 2 or Fig. 4 as a particle 45 as a scattering center. The transparent material 36 can be negatively charged with sufficient particulate matter to reduce or eliminate the yellow aperture problem described above. Transparent material ^ - a thickness, such as between 0.5 _ and 5 yell, compared with luminescent phoenix 126504.doc -11 - 200845456: it has a thickness greater than 1 〇〇. In some embodiments, the particulate matter 45 is a non-wavelength converting material. 1 Scattering granules 45 are selected such that there is a different refractive index between the transparent material 36. _ The outer sputum is early and the scattering particulate matter 45 is *larger possible. For example, the transparent material 36 has a refractive index therebetween, such as epoxy or polysecond oxygen. The scattering particles have a refractive index between U and 2·4, such as doped or undoped Y3Al5〇1^ZnS. The closer the refractive index is, the more scattering micro

The particles 45 must be disposed in the transparent material % to achieve a given amount of scattering. Examples of suitable materials for the scattering particulate matter 45 include silk compounds such as Y2〇3, titanium oxide, pin oxide, and tear oxide. In some embodiments, suitable particulate matter has an average diameter between 0.5 and 20, where λ is the wavelength in the illumination device that is emitted by the illumination region. In some embodiments, the suitable volume fill factor for the granules is between 10 and 100 knives of the transparent material, and the appropriate number density of the particles is one (5 λ) 3 of particulate matter. Both the size of the particulate matter and the number density of the particulate matter depend on the difference in refractive index between the transparent material 36 and the particulate matter 45. In some embodiments, the scattering particulate matter 45 is a phosphor particulate, such as a red-emitting phosphor particulate. Suitable red-emitting phosphor particles include eCAS, BSSNE, SSONE, and (Ca bxSrx)S:Eu2+, where 〇<x£l, including, for example, CaS:Eu2+ and SrS:Eu2+; and (Srbx -y

BaxCay)2-zSi5_aAlaN8.a〇a: Euz2+, where 〇$a<5,0<x$l, and 0<zU, including for example Sr2Si5N8:Eu2+. eCAS, which is Ca!.x AlSiN3:Eux, can be composed of 5.436 g Ca3N2 (>98% purity), 4.099 g AIN (99%), 4.732 g Si3N4 (>98% purity) and 0.176 g Eu203 126504.doc -12- 200845456 (99.99% purity) synthesis. The powders were mixed with a planetary ball mill and fired at 1500 ° C for four hours in an H 2 /N 2 (5/95%) environment. bsSNE, 疋 Ba2-x, zMxSi5-yAlyN8-yOy: Euz (M=Sr, Ca; 0<x<l, 〇<y$4, 0·0005<ζ^0·05), which can be reduced by carbothermal Synthesis comprising the mixing of 60 g BaC03, 11.221 g and 1.672 g Eu203 (all 99.99% purity) with a planetary ball mill using 2-propanol as a dispersant. After drying, the mixture was fired in a gaseous atmosphere at a temperature of 100 ° C for 4 hours, and the obtained g Ba 〇 .8 Sr 〇 . 20 : Eu (2%) was mixed into 5.846 g Si 3 N 4 (> 98% purity), 〇· 056 g AIN (99% purity) and 1.060 g graphite (microcrystalline grade). The powder was thoroughly mixed with a planetary ball mill for 20 minutes, and fired at a temperature of 145 ° C for four hours in a gas atmosphere to obtain Ba2-x.zMxSi5-yAlyN8.yOy: Enz (M=Sr, Ca; 〇 &<1 , 〇sys4, 0.00052^.05) powder. ss〇NE can be mixed by 80.36 g SrC03 (99.99% purity), 20.0 g SiN4/3 (>98% purity) and 2.28§£11203 (99.99% purity) and in a %/112 (93/7) atmosphere It is produced by firing at 1200 ° C for four hours. The red-emitting phosphor particles have an average particle diameter between 〇·5 λ and 20 λ, where λ is the wavelength in the illuminating device emitted by the illuminating region, and the concentration in the transparent material is in the volume Between 0.1 and 95%, preferably between 10% and 30% of the volume. In some embodiments, red-emitting phosphor particulates are included in the transparent material 36 as scattering particulates 45. The light emitting region 31 of the semiconductor structure 12 emits blue light. The luminescent ceramic contains a phosphor that emits light in the yellow/green range. The red light emitted by the illuminating region 3 1 unconverted blue light combined with the yellow/, luminescent, and red phosphor particles emitted by the luminescent ceramic causes the mixed light to appear white 126504.doc -13- 200845456 color. The number of red phosphors and the doping level of the red phosphor disposed in the transparent material 36 can be selected to produce the desired amount of red light emission and the number of scatterings. If the number of red light phosphors required for the desired amount of red light emission is not sufficiently scattered, then in addition to the red phosphor particles, non-wavelength-converting particulate matter, such as the particulate matter described above, can be It is included in the transparent material 36 in order to achieve the desired amount of scattering. The luminescent ceramic 30 can be formed from any suitable phosphor. A suitable yellow/green luminescent phosphor comprises a Mingshi Quanshi phosphor, which has the general chemical formula (Lui_x yb YxGdyMAlMGaAOKCej^, where 〇<χ<1, 〇<y<1, ο. $0.1,0<a$0.2 and 〇 <bs(U, such as Lu3Al5〇i2: Ce3+ and Y3Al5〇i2: Ce3+;

SrSi2N202:Eu; (sri.v-xMguCavBax)(Ga2.y-zAlyInzS4): Eu2+ contains, for example, SrGa2S4:Eu2+; and Sri-xBaxSi〇4:Eu2+. A suitable Y3Al5〇i2:Ce3+ pottery can be obtained by: 40 g Y2〇3 (99.998%), 32 g Al2〇3 (99.999%), and 3.44 g Ce〇2 in isopropanol. It was ground on a runner platform for 12 hours with an i 5 kg high purity ball (2 mm diameter). The air-dried carcass powder was then calcined at a temperature of 13 ° C for two hours in a C 〇 environment. The obtained YAG powder was then ground under a planetary ball mill (agate ball) under ethanol. The ceramic slurry is then slipped and allowed to air dry to give a ceramic body. The blank was then sintered between graphite sheets at a temperature of 1700 ° C for two hours. The two examples of phosphors above the official image include a yellow/green luminescent phosphor that forms a luminescent luminescence and a red-emitting phosphor that is included as a scattering particulate in a transparent material, but the two phosphors can be reversed. come. For example, one of the above-described red-emitting luminosity bodies can be formed as a luminescent ceramic and a layer of transparent material comprising a w-green luminescent phosphor as described above in 126504.doc -14-200845456 as a scattering particulate matter. The transparent material 36 may be, for example, a financial material such as a cyclic acrylic acid or a polyoxo, or a plurality of high refractive index inorganic materials, θ Golo glass. This material can be used as a binder and attached to the body structure 12, as in the apparatus shown in Figure 2. Examples of high refractive index materials include high refractive index optical glasses such as (iv) (10)) glass SF59, Schottberg side, Schott glass [here and their mixtures. These glasses can be passed from ~Heart's Shaw Technology Limited A Division. Examples of other high refractive index materials include high refractive index chalcogenide glasses, such as (Ge, Sb, Ga) (s, Sewmm_v_ conductors include, but are not limited to, GaP, InGaP, GaAs, and GaN, and the ?_VI family of halves include, but are not limited to, Zns , Znse, znTe, Cds, cds^cdTe, iv slave semiconductors and compounds including but not limited to Ge, organic semiconductors, metal oxides including but not limited to tungsten oxide, titanium oxide, nickel oxide, aluminum oxide, indium Tin oxide and chromium oxide, metal fluorides include, but are not limited to, fluorides and fluorides, and metals include, but are not limited to,

In, Mg and Sn, yttrium aluminum garnet (YAG), phosphorus compound, arsenic compound, bismuth compound 'nitrogen compound' high molecular organic compound and their compound or alloy. Application for application of high-refractive-index inorganic materials in the application for the application of the No. 09/660, 317, and the June 12, 2001 : Dijon Lake 〇, 2〇4 has a more detailed description, both of which are included:

Used as a reference. S sol-gel glass is described in more detail in U.S. Patent No. 6,642,618, which is incorporated herein by reference. In some embodiments, luminescence = 126504.doc -15- 200845456 Porcelain is attached to the device by sol-gel glass, one or more materials such as titanium, tantalum, lead, gallium, antimony, cadmium, zinc, antimony or aluminum. The oxide may be included in the cerium oxide sol gel glass to increase the refractive index of the glass in order to more closely match the refractive index of the glass having the index of the luminescent ceramic and the surface of the semiconductor structure to which the luminescent ceramic is attached. The luminescent ceramics described herein can be structured or molded, ground, mechanically processed, hot stamped or buffed into a desired shape, for example, for increased light extraction. For example, luminescent ceramics can be ground into the shape of a lens, such as a dome lens or a Fresnel lens, which is roughened or deformed into a photonic crystal structure, such as a periodic lattice formed in a ceramic. The shaped ceramic layer may be smaller, larger or larger than the surface it is attached to. Figure 3 is an exploded view of a packaged illumination device, which is described in more detail in U.S. Patent No. 6,274,924. A heat sink plug 1 is configured with an insert molded lead. The insert molded lead is, for example, a filled plastic material 105 cast around the metal frame 106 that provides an electrical path. Plug 100 can include an optional reflective container 1〇2. The illuminating device die 104, which may be any of the devices described in the above embodiments, is directly or indirectly secured to the plug 1 通 by a thermal mount fastener 103. A cover 108, which may be an optical lens, can be added. The present invention has been described in detail, and it will be appreciated by those skilled in the art that the present invention may be practiced without departing from the scope of the invention described herein. For example, although the examples herein refer to m-type nitride light-emitting diodes, it should be understood that embodiments of the invention may be extended to other light-emitting devices, including other material systems such as m-group phosphides and 126504.doc -16-200845456 ΠΙ Devices of the family, as well as other structures such as resonant cavity LEDs, laser diodes and vertical cavity surface emitting lasers. Therefore, the scope of the invention is not intended to be limited to the particular embodiments illustrated and described. BRIEF DESCRIPTION OF THE DRAWINGS A light-emitting layer Fig. 1 shows a luminescent ceramic which is disposed on top of an included semiconductor structure.

Fig. 2 shows a luminescent ceramic according to an embodiment of the invention attached to a semiconductor structure by a transparent material containing scattering particles. Figure 3 is an exploded view of a packaged light emitting device. Fig. 4 shows a transparent material comprising scattering particulate matter according to an embodiment of the invention, which is formed on a luminescent ceramic enamel attached to a semiconductor structure. [Main component symbol description] 12 illuminating device 30 luminescent ceramic 31 illuminating region 33 ray 34 ray 36 transparent material 37 underfill material 38 η contact portion 39 Ρ contact portion 41 η interconnection 42 ρ interconnection 43 fixing member 126504.doc -17 - 200845456 45 Scattering particles 100 Heat sink 102 Reflecting container 103 Heat patch holder 104 Die 105 Filling plastic material 106 Metal frame 108 Cover 126504.doc - 18-

Claims (1)

  1. 200845456 X. Patent Application Range: 1. A device comprising: a semiconductor structure 12 comprising: a light-emitting region 31 disposed between an n-type region and a p-type region; - the ceramic body 30' includes - a wavelength conversion material, the ceramic body is disposed in the light-emitting path of the light-emitting area; a transparent material 36 disposed in the light-emitting path of the light-emitting area, wherein the light-emitting area is disposed in the transparent material layer A plurality of particles 45 of the emitted light. 2. The device according to the claim item, wherein the transparent material % is disposed between the semiconductor structure 12 and the ceramic body 3G, and the semiconductor structure is connected to 3. The device material 36 according to claim 1 and the semiconductor structure The T琢 ceramic body 30 is disposed between the 12 and the transparent device according to claim 1, wherein the thickness of the transparent material 36 is less than 5 〇 0 / 〇 of a thickness of the ceramic body 30. 5. The apparatus of claim 1, wherein the refractive index of the particulate matter 45 and the refractive index of the transparent material 36 differ by at least 〇4.斤射革和6· According to the device of pleading item 1, 1 兮笠 、, cobalt... Special particles 45 are from the group of 钇 匕 匕 销 销 销 销 销 销 销 销 7 7 7 7 7 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据The device is preferably selected from the body. - λ#σ The wavelength of the light emitted by the illuminating region 31. The device in the 胄 structure 12, according to the request item, wherein the transparent oxygen, the ring Selected from the group of oxygen resin and broken glass. ', 攸 includes Ju Shi Xi 9. According to the request 1, the ▲ set, wherein the transparent material 36 has a layer at 126504.doc 200845456 〇·5 μπι and 5〇μηι The device according to claim 1, wherein the semiconductor structure 12 comprises a plurality of group III-mouse layers. 11. A device comprising: a semiconductor structure 12 comprising a type of n-type a light-emitting region 31 between the region and the one-type region; a ceramic body 30 comprising a first wavelength converting material disposed in a light-emitting path of the light-emitting region; a transparent material 36 configured In the light-emitting path of the light-emitting region, a plurality of particles 45 of a second wavelength converting material are disposed in the layer of transparent material. 12_ The device according to claim 11, wherein the transparent material 36 is disposed in the semiconductor Between the structure 12 and the ceramic body 30, and connecting the semiconductor structure to the ceramic body. 13. The device according to claim η, wherein the ceramic body 3 is disposed between the transparent material 36 and the semiconductor structure 12. 14. The device according to claim π, wherein a thickness of the transparent material 36 is 50% less than a thickness of the ceramic body 30. 15. The device according to claim u, wherein the light-emitting region 31 is configured to emit blue light The first wavelength converting material is configured to absorb blue light and emit yellow or green light, and the second wavelength converting material is configured to absorb blue light and emit red light. The first wavelength converting material is selected from the group consisting of (Lubx-y.bYxGdyMAli.zGazhOaCeaPrb, where 〇<x<I 〇<y<l, 〇<Ζ£〇·1,0<a$0.2 and 0<bS0 .1 ; Lu3Al5〇12:Ce3+ ; Y3Al5012:Ce3 + ; 126504.doc 200845456 SrSi2N202:Eu2+ ; (Sr1DuDvDxMguCavBax)(Ga2.y.zAlyIn2S4): Eu2+; Sr Ga2S4:Eu2+; and Sn-xBaxSiO^Eu^. 17 · According to the device of claim 11, wherein the second wavelength conversion The system is selected from the group consisting of (Cai-xSrx)S:Eu2+, wherein 00<x$l;CaS:Eu2+;SrS:Eu2+; (Sri_x_yBaxCay)2-zSi5-aAlaN8_a〇a:EUz2+, wherein 〇Sa<5, 〇<;x$i, 〇分£1, and 〇<d ; Sr2Si5N8:Eu2+ ; Ca〇.99AlSiN3:Eu〇.〇i ; Ba2DX[]ZMxSi5_yAlyN8-yOy:Euz (M=Sr, Ca; 0QS1, MyU, 0.0005 · · 05); and the group of Sri xSi2 〇 2N2: Eu2 +. 18. The apparatus of claim 11, further comprising a plurality of non-wavelength-converting particulates disposed in the layer of transparent material 36. 19. Apparatus according to claim U, wherein the transparent material 36 is selected from the group consisting of polyoxygen, epoxy and glass. 20. The device of claim 1, wherein the layer of transparent material 36 has a thickness between 0.5 μm and 50 μm. 21. The device of claim 11, wherein the semiconductor structure 12 comprises a plurality of III-nitride layers. 22. Apparatus according to claim U, further comprising: η*ρ contact portions 38, 39 electrically connected to the n-type and p-type regions; a cover 108 disposed on the illuminating region . 126504.doc
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US20080116467A1 (en) 2008-05-22
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US7521862B2 (en) 2009-04-21
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WO2008096214A3 (en) 2009-02-26
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CN101657910B (en) 2012-10-10
RU2457582C2 (en) 2012-07-27

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